Plasma processing apparatus

Abstract

A plasma processing apparatus is provided. According to an embodiment, the plasma processing apparatus includes: a chamber in which plasma processing is performed; a radio frequency antenna connected to a radio frequency power supply; a dielectric window disposed between the radio frequency antenna and the chamber; a first Faraday shield disposed on the chamber and including a first portion and a first opening; and a second Faraday shield disposed inside the chamber and including a second portion and a second opening. The first opening and the second opening are arranged alternately in a staggered manner along a vertical direction.

Description

Technical Field

[0001] This disclosure relates to plasma processing apparatus and plasma processing system including plasma processing apparatus. Background Technology

[0002] Display devices include liquid crystal displays (LCDs), plasma display panels (PDPs), organic light-emitting diode (OLED) devices, field emission displays (FEDs), and electrophoretic display devices.

[0003] Display devices include signal lines and layers such as light-emitting layers, and can be etched with stacked layers including metal layers to form signal lines. Copper is commonly used as the metal layer due to its low resistance. However, copper byproducts after the reaction are highly volatile and can cause problems with copper byproducts adhering to the interior of the etching apparatus chamber. When byproducts form films on RF windows and Faraday shields, the efficiency of power transfer to the plasma processing space can be reduced due to eddy currents. Therefore, the interior of the chamber needs to be cleaned regularly. Utility Model Content

[0004] This disclosure provides a plasma processing apparatus and a plasma processing system including a plasma processing apparatus that prevent the weakening of the induced electric field caused by the formation of eddy currents through the arrangement of Faraday shielding.

[0005] According to embodiments of this disclosure, a plasma processing apparatus includes: a chamber in which plasma processing is performed; a radio frequency antenna connected to a radio frequency power supply; a dielectric window disposed between the radio frequency antenna and the chamber; a first Faraday shield disposed on the chamber and including a first portion and a first opening; and a second Faraday shield disposed inside the chamber and including a second portion and a second opening. The first opening and the second opening may be arranged alternately in an alternating manner along a vertical direction of the upper surface of the chamber.

[0006] The first portion extends radially outward from the center of the first Faraday shield and can be connected to the first edge, and the second portion extends radially outward from the center of the second Faraday shield and can be connected to the second edge.

[0007] The first part and the first opening can be arranged alternately in the plan view, and the second part and the second opening can be arranged alternately in the plan view.

[0008] The first portion may at least partially overlap with the second opening in the vertical direction, and the second portion may at least partially overlap with the first opening in the vertical direction.

[0009] The first Faraday shield may be spaced apart from the second Faraday shield in the vertical direction.

[0010] The first Faraday shield can be separated from the chamber by an insulating layer or can be coated with an insulating film.

[0011] The first Faraday shield can be integrally formed with the dielectric window.

[0012] The first Faraday shield can be placed between the RF antenna and the dielectric window.

[0013] The plasma processing apparatus may also include a support member disposed inside the chamber. The support member may attach a second Faraday shield to the upper surface of the chamber or the inner wall of the chamber.

[0014] The first and second Faraday shields can be made of non-magnetic metals.

[0015] The surface of the second Faraday shield may be coated with at least one of Al2O3 and Y2O3.

[0016] The first and second Faraday shields can have a quadrilateral shape.

[0017] According to embodiments of this disclosure, a plasma processing system includes a plasma processing apparatus, a power supply, and a cooling fluid supply section. The plasma processing apparatus includes: a chamber in which plasma processing is performed; a radio frequency antenna connected to a radio frequency power supply; a dielectric window disposed between the radio frequency antenna and the chamber; a first Faraday shield disposed on the chamber and including a first portion and a first opening; and a second Faraday shield disposed inside the chamber and including a second portion and a second opening. The power supply is disposed outside the chamber and connected to the second Faraday shield. The cooling fluid supply section is connected to a cooling path of the second Faraday shield. The first and second openings are arranged alternately in an alternating manner.

[0018] The power source can supply at least one of voltage, current, and electrical power to the second Faraday shield.

[0019] The cooling fluid supply section can supply liquefied or gaseous fluid to the inlet of the cooling path to regulate the temperature of the second Faraday shield.

[0020] The first Faraday shield may include a first portion extending radially outward from the center and connected to a first edge, and the second Faraday shield may include a second portion extending radially outward from the center and connected to a second edge.

[0021] The first part and the first opening can be arranged alternately in the plan view, and the second part and the second opening can be arranged alternately in the plan view.

[0022] The first portion may at least partially overlap with the second opening in the vertical direction on the upper surface of the chamber, and the second portion may at least partially overlap with the first opening in the vertical direction.

[0023] The first Faraday shield can be integrally formed with the dielectric window.

[0024] The first Faraday shield can be placed between the RF antenna and the dielectric window.

[0025] According to an embodiment, by arranging the openings included in each of the plurality of Faraday shields in an alternating manner, the weakening of the induced electric field caused by the formation of eddy currents can be prevented. Attached Figure Description

[0026] Figure 1 A plasma processing system according to an embodiment is shown.

[0027] Figure 2 An example is shown. Figure 1 Plan view of the first Faraday shield.

[0028] Figure 3 An example is shown. Figure 1 Plan view of the second Faraday shield.

[0029] Figure 4 The structures of a first Faraday shield and a second Faraday shield in a plasma processing apparatus according to an embodiment are shown.

[0030] Figure 5 It shows Figure 4 The diagram shows variations in the structure of the first and second Faraday shields.

[0031] Figure 6 The structures of a first Faraday shield and a second Faraday shield in a plasma processing apparatus according to an embodiment are shown.

[0032] Figure 7 It shows Figure 6 The diagram shows variations in the structure of the first and second Faraday shields.

[0033] Figure 8 The attachment of byproducts to a first Faraday shield and a second Faraday shield in a plasma processing apparatus according to an embodiment is shown.

[0034] Figure 9 The byproducts were shown to Figure 8 The first and second Faraday shields are shown in the attached variant.

[0035] Figure 10The attachment of byproducts to a first Faraday shield and a second Faraday shield in a plasma processing apparatus according to an embodiment is shown.

[0036] Figure 11 The byproducts were shown to Figure 10 The first and second Faraday shields are shown in the attached variant. Detailed Implementation

[0037] The present disclosure will be described more fully below with reference to the accompanying drawings, in which embodiments of the present disclosure are illustrated. As will be understood by those skilled in the art, the described embodiments may be modified in various ways, all of which do not depart from the spirit or scope of the present disclosure.

[0038] The accompanying drawings and descriptions are intended to be illustrative rather than restrictive, and similar reference numerals refer to similar elements throughout the specification.

[0039] Furthermore, the accompanying drawings are intended only to facilitate understanding of the embodiments disclosed herein, and it should be understood that the technical ideas disclosed herein are not limited by the drawings and include all modifications, equivalents, and substitutions without departing from the scope and spirit of this disclosure.

[0040] For better understanding and ease of description of this disclosure, the dimensions and thicknesses of the various configurations shown in the accompanying drawings are arbitrarily illustrated, but this disclosure is not limited thereto. For clarity, the thicknesses of layers, films, panels, regions, etc., are enlarged. For ease of description, the thicknesses of some layers and regions are enlarged.

[0041] It should be understood that when an element, such as a layer, film, region, or substrate, is referred to as being "on" another element, that element can be directly on the other element, or an intervening element may be present. Conversely, when an element is referred to as being "directly on" another element, no intervening element is present. It should be understood that when an element, such as a layer, film, region, or substrate, is referred to as being "on" another element, that element can be directly on the other element, or it can be indirectly on the other element with an intervening element present.

[0042] Unless explicitly stated otherwise, the word “comprise” and variations such as “comprises” or “comprising” should be understood to mean that the said element is included, without excluding any other element.

[0043] The phrase "in a plan view" means viewing an object from the top, while the phrase "in a cross-section view" means viewing a cross-section of an object in which the object is cut vertically from the side.

[0044] In addition, when describing a part as "attached" to another part (or "in contact" or "connected" to another part), the part may be "directly attached" to the other part, may be "attached" to the other part through a third part, or may be physically or electrically attached to the other part.

[0045] Embodiments of this disclosure will now be described in detail with reference to the accompanying drawings.

[0046] Figure 1 A plasma processing system according to an embodiment is shown.

[0047] refer to Figure 1 The plasma processing system 10 may include a plasma processing apparatus 100 having a plasma processing chamber 116, a bias power supply 101 for supplying at least one of voltage, current, and power, and a cooling fluid supply section 102 for supplying fluid to an inlet of a cooling path (not shown). This embodiment discloses a plasma processing apparatus 100 using inductively coupled plasma (ICP) generated by an inductively coupled (IC) method. However, this embodiment is not limited to this, and it can also be applied to plasma processing apparatus 100 using plasma generated by various other methods. In various embodiments, at least one of the above-described components may be omitted from the plasma processing system 100, or additional components may be included.

[0048] According to an embodiment, the plasma processing apparatus 100 may include a first Faraday shield 200, a second Faraday shield 300, a matching unit 103, a radio frequency power supply 104, a radio frequency antenna 105 connected to the radio frequency power supply 104, a chamber 110, and a dielectric window 106 disposed between the radio frequency antenna 105 and the chamber 110. In various embodiments, at least one of the above-mentioned components may be omitted from the plasma processing apparatus 100, or other components may be additionally included.

[0049] Each of the first Faraday shield 200 and the second Faraday shield 300 can be used as a physical shield to protect at least a portion of the interior of the chamber 110 from undesirable redeposition of material. In particular, the first Faraday shield 200 and the second Faraday shield 300 can be used as sputtering shields to prevent redeposition of conductive material. The first portion 211 of the first Faraday shield 200 (see...) Figure 2 ) and the second part 311 of the second Faraday shield 300 (see Figure 3 It can be configured to have sufficient length and to shield the electric field generated by the radio frequency antenna 105. The first Faraday shield 200 and the second Faraday shield 300 can be grounded through the chamber 110 or connected to an additional grounding wire.

[0050] According to an embodiment, a first Faraday shield 200 may be disposed on the chamber 110. According to an embodiment, the first Faraday shield 200 may be integrally formed with the dielectric window 106. According to an embodiment, the first Faraday shield 200 may be integrally formed with the dielectric window 106 and may form the upper surface of the chamber 110. According to an embodiment, the first Faraday shield 200 may be surrounded by the dielectric window 106.

[0051] According to an embodiment, a first Faraday shield 200 may be disposed between the radio frequency antenna 105 and the dielectric window 106. For example, the first Faraday shield 200 may contact the upper surface of the dielectric window 106 between the radio frequency antenna 105 and the dielectric window 106.

[0052] According to an embodiment, the first Faraday shield 200 may be provided as a metallic material to shield the electric field. For example, the first Faraday shield 200 may be made of a non-magnetic metal. For example, the first Faraday shield 200 may be made of copper.

[0053] According to an embodiment, the first Faraday shield 200 can be separated from the chamber 110 by an insulating layer (e.g., dielectric window 106). According to an embodiment, the surface of the first Faraday shield 200 may be coated with an insulating film.

[0054] According to an embodiment, the first Faraday shield 200 may have a shape similar to that of the substrate 114. For example, when viewed in a vertical direction from the upper surface of the first Faraday shield 200, the first Faraday shield 200 may have a substantially quadrilateral planar shape. However, it is not limited thereto, and the first Faraday shield 200 may have various planar shapes depending on the planar structure of the chamber 110, the plasma processing chamber 116, the substrate support member 115, and the substrate 114. (Refer to...) Figure 2 The shape of the first Faraday shield 200 is described in detail.

[0055] According to an embodiment, the second Faraday shield 300 may be disposed inside the chamber 110. Specifically, the second Faraday shield 300 may be secured by a support member (not shown) and may be exposed outside the chamber 110. More specifically, the second Faraday shield 300 may be secured by a support member (not shown) to the upper portion of the chamber 110 (e.g., the inner surface of the upper portion of the chamber 110) or the inner wall of the chamber 110.

[0056] According to an embodiment, the second Faraday shield 300 may be perpendicularly spaced from the first Faraday shield 200 by a predetermined distance. Specifically, the second Faraday shield 300 may be perpendicularly spaced from the first Faraday shield 200 by a predetermined distance, and each of the plurality of second Faraday shields 300 may be arranged parallel to each other.

[0057] According to an embodiment, when the first Faraday shield 200 and the dielectric window 106 are integrally formed, the size of the gap between the first Faraday shield 200 and the second Faraday shield 300 can be smaller than the size of the gap between the first Faraday shield 200 and the second Faraday shield 300 when the first Faraday shield 200 is arranged between the radio frequency antenna 105 and the dielectric window 106.

[0058] According to an embodiment, the second Faraday shield 300 may be provided as a metallic material to shield the electric field. For example, the second Faraday shield 300 may be provided as a non-magnetic metallic material. For example, the second Faraday shield 300 may be made of copper. According to an embodiment, the surface of the second Faraday shield 300 may be coated with at least one of Al2O3 and Y2O3.

[0059] According to an embodiment, the second Faraday shield 300 may have a shape similar to that of the substrate 114. For example, when viewed in a vertical direction from the upper surface of the second Faraday shield 300, the second Faraday shield 300 may have a substantially quadrilateral planar shape. However, it is not limited thereto, and the second Faraday shield 300 may have various planar shapes depending on the planar structure of the chamber 110, the plasma processing chamber 116, the substrate support member 115, and the substrate 114. (Refer to...) Figure 3 The shape of the second Faraday shield 300 is described in detail.

[0060] According to an embodiment, the radio frequency antenna 105 may be disposed on the chamber 110. The radio frequency antenna 105 may be disposed on the chamber 110 with a dielectric window 106 therebetween. According to an embodiment, the radio frequency antenna 105 may be an inductively coupled plasma antenna and may be made of a conductor spirally wound in a clockwise or counterclockwise direction. That is, the radio frequency antenna 105 may include a coil spirally wound in a clockwise or counterclockwise direction.

[0061] According to an embodiment, the radio frequency antenna 105 may have a shape symmetrical about a center point on a plane. According to an embodiment, the radio frequency antenna 105 may have a symmetrical structure to form an induced electric field of constant intensity within the interior space of the plasma processing chamber 116.

[0062] According to an embodiment, when viewed in a vertical direction on the upper surface of the chamber 110, the radio frequency antenna 105 may have a quadrilateral helical coil planar shape. However, it is not limited to this, and the radio frequency antenna 105 may have various planar shapes depending on the planar structure of the chamber 110, the plasma processing chamber 116, the substrate support member 115, and the substrate 114.

[0063] The radio frequency antenna 105 may have a bent portion and may have a helical winding form. According to an embodiment, the bent portion of the radio frequency antenna 105 may be bent at a predetermined angle (e.g., 90 degrees). For example, the radio frequency antenna 105 may be bent at a predetermined angle in a corner area. However, it is not limited to this, and the radio frequency antenna 105 may be bent into a circular shape with a predetermined radius.

[0064] The helical coils constituting the radio frequency antenna 105 can be formed parallel to each other with a predetermined gap between them to maintain an appropriate gap in which there is no current interference.

[0065] According to an embodiment, the radio frequency antenna 105 can be connected to the radio frequency power supply 104 via a matching adapter 103. The matching adapter 103 can be arranged between the radio frequency antenna 105 and the radio frequency power supply 104, and matches the impedance of the radio frequency antenna 105.

[0066] In detail, one end of the RF antenna 105, located at the center of the spiral of the RF antenna 105, can be connected to the RF power supply 104. The other end of the RF antenna 105 can be grounded.

[0067] According to an embodiment, the radio frequency antenna 105 can be connected to a radio frequency power supply 104 that supplies radio frequency (RF) power. Specifically, one end of the radio frequency antenna 105, located at the center of a spiral, can be connected to the radio frequency power supply 104. According to an embodiment, the radio frequency power of the radio frequency power supply 104 can be distributed to the radio frequency antenna 105.

[0068] According to an embodiment, the matching unit 103 may be installed between the RF antenna 105 and the RF power supply 104. The matching unit 103 may be arranged between the RF antenna 105 and the RF power supply 104 for impedance matching of the RF antenna 105.

[0069] According to an embodiment, a dielectric window 106 may be disposed between the radio frequency antenna 105 and the cavity 110. The dielectric window 106 can reduce the capacitive coupling between the radio frequency antenna 105 and the plasma 111 to facilitate the transfer of energy from the radio frequency power supply 104 to the plasma 111 via inductive coupling.

[0070] According to an embodiment, the interior of chamber 110 may include a second Faraday shield 300, a support member (not shown) for fixing the second Faraday shield 300 to the interior of chamber 110, a plasma processing chamber 116 in which plasma 111 processing is performed, and a substrate support member 115 for placing a substrate 114, etc.

[0071] For example, substrate support member 115 may use an electrostatic chuck (ESC) that holds and supports substrate 114 by electrostatic force. Substrate support member 115 may use a mechanical clamping method to fix substrate 114, or a vacuum chuck that holds and supports substrate 114 by vacuum pressure.

[0072] According to an embodiment, chamber 110 may include a gas inlet 112 and a fluid outlet 113. Chamber 110 may include a gas inlet 112 for supplying reactive gases to plasma processing chamber 116 and a fluid outlet 113 for maintaining plasma processing chamber 116 in a vacuum state and discharging reactive gases at the end of the reaction.

[0073] According to an embodiment, an etching process using plasma can be performed in chamber 110. Inside chamber 110, etching gas supplied through gas inlet 112 can be converted into a plasma state by radio frequency power, thereby allowing the etching process of substrate 114 to proceed.

[0074] According to one embodiment, bias power supply 101 may be connected to second Faraday shield 300. According to another embodiment, bias power supply 101 may apply at least one of voltage, current, and power to second Faraday shield 300 during a process. According to yet another embodiment, bias power supply 101 may apply at least one of voltage, current, and power to second Faraday shield 300 when cleaning plasma between processes.

[0075] As described above, with respect to the plasma processing system 10 according to this disclosure, the bias power supply 101 can apply power during plasma cleaning between processes, thereby allowing in-situ cleaning of the dielectric window 106 and the second Faraday shield 300. The form of power may include at least one of direct current power, alternating current power, and radio frequency power.

[0076] According to an embodiment, the cooling fluid supply section 102 may be connected to the second Faraday shield 300. According to an embodiment, a cooling path (not shown) may be formed on the second Faraday shield 300. For example, the cooling path (not shown) may be provided inside the second Faraday shield 300.

[0077] According to an embodiment, the cooling fluid supply section 102 can supply liquefied or gaseous fluid to the inlet of a cooling path (not shown) to regulate the temperature of the second Faraday shield 300. Specifically, the cooling fluid supply section 102 can supply high-temperature fluid to the inlet of the cooling path and can maintain the second Faraday shield 300 at a high temperature. As described above, in the plasma processing system 10 according to this disclosure, the re-attachment of etching byproducts can be controlled or suppressed by maintaining the second Faraday shield 300 at a high temperature.

[0078] Figure 2 An example is shown. Figure 1 Plan view of the first Faraday shield.

[0079] refer to Figure 2 The first Faraday shield 200 may have a shape symmetrical about a center point in a planar view. According to an embodiment, when viewed vertically from the upper surface of the chamber 110, the first Faraday shield 200 may have a substantially quadrilateral planar shape. For example, the first Faraday shield 200 may have a rectangular planar shape. The lengths of the horizontal and vertical sides of the first Faraday shield 200 may be different from each other. That is, the first Faraday shield 200 may have a long side and a short side. However, it is not limited to this; the first Faraday shield 200 may have various planar shapes depending on the planar structure of the chamber 110, the plasma processing chamber 116, the substrate support member 115, and the substrate 114.

[0080] According to an embodiment, the first Faraday shield 200 may include a first portion 211 and a first opening 212. According to an embodiment, each of the plurality of first portions 211 may have a radial pattern originating from the center of the first Faraday shield 200. According to an embodiment, the quadrilateral first Faraday shield 200 may include a first edge 210. The first edge 210 may correspond to an outer region of the first Faraday shield 200.

[0081] According to an embodiment, the first portion 211 may extend radially from the center of the first Faraday shield 200 to the outside and may be connected to the first edge 210. For example, the first portion 211 may be integrally formed with the first edge 210.

[0082] According to an embodiment, a plurality of first portions 211 may be spaced apart from each other. According to an embodiment, a plurality of first openings 212 may be formed between the plurality of first portions 211. That is, the first openings 212 and the first portions 211 may be arranged (or formed) alternately along the extending direction of the first edge 210. The plurality of first openings 212 may be spaced apart from each other.

[0083] According to an embodiment, the size of the gap between two adjacent first portions 211 can gradually increase as it moves outward from the center of the first Faraday shield 200.

[0084] According to an embodiment, the size of the gap between a pair of adjacent first portions 211 may be the same as the size of the gap between another pair of adjacent first portions 211, but is not limited thereto, and may also be different from each other.

[0085] According to an embodiment, the first Faraday shield 200 may include a first insulating film 220 coated on at least a portion of its surface. That is, the surface of the first Faraday shield 200 may be coated with the first insulating film 220.

[0086] According to an embodiment, when the first Faraday shield 200 is arranged on the radio frequency antenna (e.g., Figure 1The radio frequency antenna 105) and the dielectric window (e.g., Figure 1 When the dielectric window 106 is between the dielectric windows, the surface of the first Faraday shield 200 may be coated with a first insulating film 220. According to an embodiment, when the first Faraday shield 200 is integrally formed with the dielectric window 106, since the dielectric window 106 can be used as an insulating film, the first Faraday shield 200 may not be coated with the first insulating film 220. However, this disclosure is not limited thereto, and the first Faraday shield 200 may be coated with the first insulating film 220.

[0087] Figure 3 An example is shown. Figure 1 Plan view of the second Faraday shield.

[0088] refer to Figure 3 According to an embodiment, the second Faraday shield 300 may have a shape symmetrical about a center point in a planar view. According to an embodiment, when viewed vertically from the upper surface of the chamber 110, the second Faraday shield 300 may have a substantially quadrilateral planar shape. For example, the second Faraday shield 300 may have a rectangular planar shape. The lengths of the horizontal and vertical sides of the second Faraday shield 300 may be different from each other. That is, the second Faraday shield 300 may have a long side and a short side. However, it is not limited to this; the second Faraday shield 300 may have various planar shapes depending on the planar structure of the chamber 110, the plasma processing chamber 116, the substrate support member 115, and the substrate 114.

[0089] According to an embodiment, the second Faraday shield 300 may include a second portion 311 and a second opening 312. According to an embodiment, each of the plurality of second portions 311 may have a radial pattern originating from the center of the second Faraday shield 300. According to an embodiment, the quadrilateral second Faraday shield 300 may include a second edge 310. The second edge 310 may correspond to an outer region of the second Faraday shield 300.

[0090] According to an embodiment, the second portion 311 may extend radially outward from the center of the second Faraday shield 300 and may be connected to the second edge 310. For example, the second portion 311 may be integrally formed with the second edge 310.

[0091] According to an embodiment, a plurality of second portions 311 may be spaced apart from each other. According to an embodiment, a plurality of second openings 312 may be formed between the plurality of second portions 311. That is, the second openings 312 and the second portions 311 may be arranged (or formed) alternately along the extending direction of the second edge 310. The plurality of second openings 312 may be spaced apart from each other.

[0092] According to an embodiment, the size of the gap between two adjacent second portions 311 can gradually increase as it moves outward from the center of the second Faraday shield 300.

[0093] According to an embodiment, the size of the gap between a pair of adjacent second portions 311 may be the same as the size of the gap between another pair of adjacent second portions 311, but is not limited thereto, and may also be different from each other.

[0094] According to an embodiment, the second Faraday shield 300 may include a second insulating film 320 coated on at least a portion of its surface. That is, the surface of the second Faraday shield 300 may be coated with the second insulating film 320. For example, the material of the second insulating film 320 may include at least one of Al2O3 and Y2O3.

[0095] According to an embodiment, the second Faraday shield 300 may include at least one support region 330 attached to a support member (not shown). For example, the support region 330 may be formed on the second edge 310. When the second Faraday shield 300 has a rectangular planar shape, the number of support regions 330 formed on the long side of the second edge 310 may be greater than the number of support regions 330 formed on the short side of the second edge 310, but this disclosure is not limited thereto.

[0096] According to an embodiment, the second Faraday shield 300 can be attached to the upper portion of the chamber 110 or the inner wall of the chamber 110 via a support member (not shown), and can be exposed inside the chamber 110.

[0097] Reference Figures 4 to 11 The plasma processing device described is mostly related to... Figure 1 The plasma processing apparatus shown in the embodiments corresponds to those described above, therefore repeated details may be summarized or omitted. Components identical to those in the embodiments described above may use the same reference numerals.

[0098] Figure 4 The structures of a first Faraday shield and a second Faraday shield in a plasma processing apparatus according to an embodiment are shown. Figure 5 It shows Figure 4 The diagram shows variations in the structure of the first and second Faraday shields.

[0099] refer to Figure 4 and Figure 5 The first Faraday shield 200 may be integrally formed with the dielectric window 106. Specifically, the first Faraday shield 200 may be integrally formed with the dielectric window 106 between the radio frequency antenna 105 and the cavity 110.

[0100] According to an embodiment, the first Faraday shield 200 may include a first portion 211 and a first opening 212. According to an embodiment, each of the plurality of first portions 211 may have a first width w1. For ease of understanding and description, this disclosure has been described such that each of the plurality of first portions 211 has the same first width w1. However, this disclosure is not limited thereto, and each of the plurality of first portions 211 may have a different width.

[0101] According to an embodiment, each of the plurality of first openings 212 may have a second width w2. For better understanding and ease of description, this disclosure has been described such that each of the plurality of first openings 212 has the same second width w2. However, this disclosure is not limited thereto, and each of the plurality of first openings 212 may have a different width.

[0102] According to an embodiment, the second Faraday shield 300 may be arranged to be exposed inside the chamber 110. The second Faraday shield 300 may be attached to the inner wall of the chamber 110 via a support member (not shown). According to an embodiment, the second Faraday shield 300 may be spaced apart from the first Faraday shield 200 by a first distance d1 in the vertical direction. The second Faraday shield 300 and the first Faraday shield 200 may be arranged parallel to each other with the first distance d1 between them. Specifically, the second Faraday shield 300 may be spaced apart from the first Faraday shield 200 by a first distance d1 in the vertical direction of the first Faraday shield 200 within the plasma processing chamber 116.

[0103] According to an embodiment, the second Faraday shield 300 may include a second portion 311 and a second opening 312. According to an embodiment, each of the plurality of second portions 311 may have a third width w3. For better understanding and ease of description, this disclosure has been described such that each of the plurality of second portions 311 has the same third width w3. However, this disclosure is not limited thereto, and each of the plurality of second portions 311 may have a different width.

[0104] According to an embodiment, each of the plurality of second openings 312 may have a fourth width w4. For better understanding and ease of description, this disclosure has been described such that each of the plurality of second openings 312 has the same fourth width w4. However, this disclosure is not limited thereto, and the plurality of second openings 312 may have different widths.

[0105] According to an embodiment, when viewed vertically from the upper surface of the chamber 110, the first Faraday shield 200 and the second Faraday shield 300 can be arranged such that the first opening 212 may stagger with the second opening 312. That is, when viewed vertically from the upper surface of the chamber 110, the first Faraday shield 200 and the second Faraday shield 300 can be arranged such that the first opening 212 may not overlap with the second opening 312.

[0106] Specifically, a first portion 211 of the first Faraday shield 200 may at least partially overlap with a second opening 312 of the second Faraday shield 300 in the vertical direction of the first Faraday shield 200. A second portion 311 of the second Faraday shield 300 may at least partially overlap with a first opening 212 of the first Faraday shield 200 in the vertical direction of the first Faraday shield 200. According to an embodiment, the first width w1 of each of the plurality of first portions 211 may be equal to or greater than the fourth width w4 of each of the plurality of second openings 312 of the second Faraday shield 300, so that the entire area of ​​the second opening 312 may or may not overlap with the first portion 211 in the vertical direction of the first Faraday shield 200.

[0107] According to an embodiment, the third width w3 of each of the plurality of second portions 311 may be equal to or greater than the second width w2 of each of the plurality of first openings 212 of the first Faraday shield 200, so that the entire area of ​​the first opening 212 may or may not overlap with the second portion 311 in the vertical direction of the first Faraday shield 200.

[0108] refer to Figure 4 The first width w1 of the first portion 211 may be greater than the fourth width w4 of each of the plurality of second openings 312. As the first width w1 of each of the plurality of first portions 211 is formed to have a width greater than the fourth width w4 of each of the plurality of second openings 312, the first portion 211 may at least partially overlap with the second openings 312 in the vertical direction of the first Faraday shield 200.

[0109] refer to Figure 5 The first width w1 of each of the plurality of first portions 211 may be equal to the fourth width w4 of each of the plurality of second openings 312. As the first width w1 of each of the plurality of first portions 211 is formed to have the same width as the fourth width w4 of each of the plurality of second openings 312, the first portions 211 may not overlap with the second openings 312 in the vertical direction of the first Faraday shield 200.

[0110] refer to Figure 4The third width w3 of each of the plurality of second portions 311 may be greater than the second width w2 of the first opening 212. As the third width w3 of each of the plurality of second portions 311 is formed to have a width greater than the second width w2 of each of the plurality of first openings 212, the second portions 311 may at least partially overlap with the first opening 212 in the vertical direction of the first Faraday shield 200.

[0111] refer to Figure 5 The third width w3 of each of the plurality of second portions 311 may be equal to the second width w2 of each of the plurality of first openings 212. As the third width w3 of each of the plurality of second portions 311 is formed to have the same width as the second width w2 of each of the plurality of first openings 212, the second portions 311 may not overlap with the first openings 212 in the vertical direction of the first Faraday shield 200.

[0112] As described above, by arranging the first opening 212 of the first Faraday shield 200 and the second opening 312 of the second Faraday shield 300 in an alternating manner, the weakening of the induced electric field caused by the formation of eddy currents can be prevented.

[0113] Figure 6 The structures of a first Faraday shield and a second Faraday shield in a plasma processing apparatus according to an embodiment are shown. Figure 7 It shows Figure 6 The diagram shows variations in the structure of the first and second Faraday shields.

[0114] refer to Figure 6 and Figure 7 The first Faraday shield 200 may be disposed between the radio frequency antenna 105 and the dielectric window 106. For example, the first Faraday shield 200 may contact the upper surface of the dielectric window 106 between the radio frequency antenna 105 and the dielectric window 106.

[0115] According to an embodiment, the first Faraday shield 200 may include a first portion 211 and a first opening 212. According to an embodiment, each of the plurality of first portions 211 may have a first width w1. For better understanding and ease of description, this disclosure has been described such that each of the plurality of first portions 211 has the same first width w1. However, this disclosure is not limited thereto, and each of the plurality of first portions 211 may have a different width.

[0116] According to an embodiment, each of the plurality of first openings 212 may have a second width w2. For better understanding and ease of description, this disclosure has been described such that each of the plurality of first openings 212 has the same second width w2. However, this disclosure is not limited thereto, and each of the plurality of first openings 212 may have a different width.

[0117] According to an embodiment, the second Faraday shield 300 may be exposed inside the chamber 110. The second Faraday shield 300 may be attached to the inner wall of the chamber 110 via a support member (not shown). According to an embodiment, the second Faraday shield 300 may be spaced from the first Faraday shield 200 by a second distance d2 in the vertical direction. According to an embodiment, the second distance d2 may be greater than a first distance (e.g., when the first Faraday shield 200 and the dielectric window 106 are integrally formed) between the first Faraday shield 200 and the second Faraday shield 300. Figure 4 or Figure 5 The first distance d1 is shown in the figure.

[0118] According to an embodiment, the second Faraday shield 300 may include a second portion 311 and a second opening 312. According to an embodiment, each of the plurality of second portions 311 may have a third width w3. For better understanding and ease of description, this disclosure has been described such that each of the plurality of second portions 311 has the same third width w3. However, this disclosure is not limited thereto, and each of the plurality of second portions 311 may have a different width.

[0119] According to an embodiment, each of the plurality of second openings 312 may have a fourth width w4. For better understanding and ease of description, this disclosure has been described such that each of the plurality of second openings 312 has the same fourth width w4. However, this disclosure is not limited thereto, and each of the plurality of second openings 312 may have a different width.

[0120] According to an embodiment, when viewed vertically from the upper surface of the chamber 110, the first Faraday shield 200 and the second Faraday shield 300 can be arranged such that the first opening 212 and the second opening 312 are staggered. That is, when viewed vertically from the upper surface of the chamber 110, the first Faraday shield 200 and the second Faraday shield 300 can be arranged such that the first opening 212 does not overlap with the second opening 312.

[0121] Specifically, the first portion 211 of the first Faraday shield 200 may at least partially overlap with the second opening 312 of the second Faraday shield 300 in the vertical direction of the first Faraday shield 200. The second portion 311 of the second Faraday shield 300 may at least partially overlap with the first opening 212 of the first Faraday shield 200 in the vertical direction of the first Faraday shield 200.

[0122] According to an embodiment, the first width w1 of each of the plurality of first portions 211 of the first Faraday shield 200 may be equal to or greater than the fourth width w4 of each of the plurality of second openings 312 of the second Faraday shield 300. (See reference...) Figure 6 The first width w1 of each of the plurality of first portions 211 may be greater than the fourth width w4 of each of the plurality of second openings 312. (See reference) Figure 7 The first width w1 of each of the multiple first parts 211 may be equal to the fourth width w4 of the second opening 312.

[0123] Figure 8 The attachment of byproducts to a first Faraday shield and a second Faraday shield in a plasma processing apparatus according to an embodiment is shown. Figure 9 The byproducts were shown to Figure 8 The first and second Faraday shields are shown in the attached variant.

[0124] refer to Figure 8 and Figure 9 As the etching process proceeds on the etched object, byproducts 800 from the etched object may adhere to the chamber 110. For example, the etched object may include components contained in a substrate (e.g., Figure 1 The copper layer in the substrate 114. Specifically, the etched object may correspond to the copper layer etched on the substrate 114 to form a circuit or a component including wiring and electrodes. However, the etched object is not limited to a copper layer and may include other material layers depending on the various embodiments.

[0125] like Figure 8 and Figure 9 As shown, the etching process can be performed in a plasma processing apparatus (e.g., Figure 1 The etching process is carried out in a plasma processing apparatus 100, wherein a first Faraday shield 200 may be integrally formed with a dielectric window 106, and a second Faraday shield 300 may be arranged to be exposed inside the chamber 110. According to an embodiment, as the etching process proceeds, byproducts 800 from the etched object may adhere to the interior of the chamber 110. For example, byproducts 800 from the etched object may adhere to the inner surface of the upper portion of the chamber 110. For example, when the dielectric window 106 forms the upper portion of the chamber 110, byproducts 800 from the etched object may adhere to the dielectric window 106.

[0126] When viewed vertically from the upper surface of chamber 110, the second Faraday shield 300 can be arranged inside chamber 110, and the first opening 212 and the second opening 312 are arranged alternately in an alternating manner, so that the byproduct 800 can be partially attached to the upper surface of chamber 110 through a shading effect. That is, the byproduct 800 may not cover the entire upper surface of chamber 110.

[0127] According to an embodiment, when the dielectric window 106 forms the upper portion of the chamber 110, the byproduct 800 may partially adhere to the dielectric window 106.

[0128] According to an embodiment, the width of the byproduct 800 may correspond to the fourth width w4 of the second opening 312. That is, the width of the byproduct 800 attached to the upper surface of the chamber 110 may correspond to the fourth width w4 of the second opening 312.

[0129] refer to Figure 8 When the first width w1 of each of the plurality of first portions 211 is greater than the fourth width w4 of each of the plurality of second openings 312, the width of the by-product 800 may be less than the first width w1.

[0130] refer to Figure 9 When the first width w1 of each of the plurality of first portions 211 is equal to the fourth width w4 of each of the plurality of second openings 312, the width of the byproduct 800 may be equal to or close to the first width w1. That is, the byproduct 800 may have a shape similar to the first portion 211, thereby effectively blocking the vortex.

[0131] Figure 10 The attachment of byproducts to a first Faraday shield and a second Faraday shield in a plasma processing apparatus according to an embodiment is shown. Figure 11 The byproducts were shown to Figure 10 The first and second Faraday shields are shown in the attached variant.

[0132] according to Figure 10 and Figure 11 Description and reference to the byproducts of the embodiments shown in the figure Figure 8 and Figure 9 The descriptions are substantially similar. Therefore, repeated explanations may be summarized or omitted. In this embodiment, the position of the first Faraday shield 200 may differ partially from the embodiments described above, which will now be described below.

[0133] refer to Figure 10 and Figure 11 Etching processes can be performed in plasma processing devices (e.g., Figure 1 The plasma processing is carried out in a plasma processing apparatus 100, wherein a first Faraday shield 200 may be arranged between the radio frequency antenna 105 and the dielectric window 106, and a second Faraday shield 300 may be arranged to be exposed inside the chamber 110.

[0134] According to an embodiment, as the etching process proceeds, byproducts 800 from the etched object can adhere to the interior of the chamber 110. When viewed vertically from the upper surface of the chamber 110, a second Faraday shield 300 can be disposed inside the chamber 110, and the first opening 212 and the second opening 312 are arranged alternately in an alternating manner, such that the byproducts 800 can partially adhere to the upper surface of the chamber 110.

[0135] That is, byproducts 800 from the etched object may not cover the entire upper surface of the chamber 110.

[0136] According to an embodiment, when the dielectric window 106 forms the upper portion of the chamber 110, the byproduct 800 may partially adhere to the dielectric window 106.

[0137] According to an embodiment, the width of the byproduct 800 may correspond to the fourth width w4 of the second opening 312. That is, the width of the byproduct 800 attached to the upper surface of the chamber 110 may correspond to the fourth width w4 of the second opening 312.

[0138] refer to Figure 10 When the first width w1 of each of the plurality of first portions 211 is greater than the fourth width w4 of each of the plurality of second openings 312, the width of the by-product 800 may be less than the first width w1.

[0139] refer to Figure 11 When the first width w1 of each of the plurality of first portions 211 is equal to the fourth width w4 of each of the plurality of second openings 312, the width of the byproduct 800 may be equal to or close to the first width w1. That is, the byproduct 800 may have a shape similar to the first portion 211, thereby effectively blocking the vortex.

[0140] As described above, by arranging the first Faraday shield 200 and the second Faraday shield 300 so that the first opening 212 and the second opening 312 are placed in an alternating manner, eddies can be prevented because the byproduct 800 has a shape similar to the first Faraday shield 200.

[0141] Furthermore, since the resistance of the byproduct 800 can be higher than that of the first Faraday shield 200, the byproduct 800 can have little or no effect on the power transfer characteristics of the first Faraday shield 200. Therefore, this prevents a decrease in power transfer efficiency into the plasma processing space due to eddy currents.

[0142] Although this disclosure has been described above, it is to be understood that this disclosure is not limited to the disclosed embodiments. Rather, this disclosure is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims

1. A plasma processing device, characterized in that, include: A chamber in which plasma processing is performed; Radio frequency antenna, which is connected to a radio frequency power supply; A dielectric window is disposed between the radio frequency antenna and the cavity; A first Faraday shield is disposed on the chamber and includes a first portion and a first opening; as well as A second Faraday shield, disposed inside the chamber, includes a second portion and a second opening. The first opening and the second opening are arranged alternately in an alternating manner along the vertical direction of the upper surface of the chamber.

2. The plasma processing apparatus according to claim 1, characterized in that, The first portion extends radially outward from the center of the first Faraday shield and connects to the first edge, and The second portion extends radially outward from the center of the second Faraday shield and connects to the second edge.

3. The plasma processing apparatus according to claim 2, characterized in that, The first portion and the first opening are arranged alternately in the plan view, and The second part and the second opening are arranged alternately in the plan view.

4. The plasma processing apparatus according to claim 1, characterized in that, The first portion at least partially overlaps with the second opening in the vertical direction, and The second portion at least partially overlaps with the first opening in the vertical direction.

5. The plasma processing apparatus according to claim 1, characterized in that, The first Faraday shield is spaced apart from the second Faraday shield in the vertical direction.

6. The plasma processing apparatus according to claim 1, characterized in that, The first Faraday shield is separated from the chamber by an insulating layer or is coated with an insulating film.

7. The plasma processing apparatus according to claim 1, characterized in that, The first Faraday shield is integrally formed with the dielectric window.

8. The plasma processing apparatus according to claim 1, characterized in that, The first Faraday shield is disposed between the radio frequency antenna and the dielectric window.

9. The plasma processing apparatus according to claim 1, characterized in that, Also includes: Supporting members, which are arranged inside the chamber, The supporting member attaches the second Faraday shield to the upper surface of the chamber or the inner wall of the chamber.

10. The plasma processing apparatus according to claim 1, characterized in that, The first Faraday shield and the second Faraday shield have a quadrilateral shape.

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