Reverse conducting insulated gate bipolar transistor device and inverter stage
By employing a combination of silicon- and cobalt-based barrier layers and aluminum-based metal layers in IGBTs, the problem of optimizing the reverse recovery performance of diodes under hard-switching conditions is solved, achieving maximum performance and simplified process, making it suitable for hard-switching applications.
CN224386025UActive Publication Date: 2026-06-19STMICROELECTRONICS INT NV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- STMICROELECTRONICS INT NV
- Filing Date
- 2025-03-25
- Publication Date
- 2026-06-19
Smart Images
Figure CN224386025U_ABST
Abstract
This disclosure relates to a reverse-conducting insulated-gate bipolar transistor (IGBT) device and an inverter stage. The reverse-conducting IGBT device includes: a substrate of a first conductivity type having a first main surface and a second main surface; an IGBT in a first portion of the substrate; a diode in a second portion of the substrate; a source region of the first conductivity type in the substrate, facing the first main surface and adjacent to a surface portion of the body structure; a trench-gate region extending from the first main surface toward the second main surface into the substrate at a location adjacent to a deep portion of the source region and the body structure; a first contact structure on the first main surface and electrically coupled to the body structure; and an emitter region of a second conductivity type on the second main surface of the substrate. Embodiments of this disclosure advantageously avoid the formation of a Schottky contact between the front metal layer and the anode region.
Need to check novelty before this filing date? Find Prior Art