Semiconductor process chamber and semiconductor processing apparatus
CN224402045UActive Publication Date: 2026-06-23RUNPENG SEMICONDUCTOR (SHENZHEN) CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- RUNPENG SEMICONDUCTOR (SHENZHEN) CO LTD
- Filing Date
- 2025-05-23
- Publication Date
- 2026-06-23
AI Technical Summary
Technical Problem
In traditional ISSG equipment, during the thin film deposition process, the airflow forms a vortex at the end of the chamber, resulting in large differences in film thickness in different areas of the wafer, and even causing the wafer to be scrapped.
Method used
A second air inlet is set inside the main chamber, and the airflow flows towards the exhaust port. Combined with the reactive gas introduced by the first air inlet, a stable reactive gas flow field is formed, reducing the probability of airflow rebound and vortex.
Benefits of technology
It improves the uniformity of film thickness on the wafer surface, reduces the formation of airflow vortices at the tail of the chamber, and enhances the uniformity of thin film deposition.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN224402045U_ABST
Abstract
The utility model discloses a kind of semiconductor process chamber and semiconductor processing device, semiconductor process chamber includes chamber main body, chamber main body inside has reaction cavity, still have with the first gas inlet, second gas inlet and exhaust port that reaction cavity is communicated, second gas inlet is located between reaction zone and exhaust port, and back to reaction zone and introduce airflow towards exhaust port;Semiconductor processing device includes semiconductor process chamber. The airflow introduced from second gas inlet into chamber main body has the tendency of flowing towards exhaust port, reaction gas introduced from the first gas inlet and the airflow introduced from second gas inlet converge, under the driving of this airflow, reaction gas can flow towards exhaust port, and flow out from exhaust port, reduce the rebound of reaction gas in the tail of chamber main body and the airflow vortex formed in tail, keep stable reaction gas flow field in chamber main body, and then improve the uniformity of wafer surface film thickness.
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