A wafer-level large-area deposition uniformity control device

Abstract

This invention belongs to the field of wafer deposition uniformity control technology, specifically a wafer-level large-area deposition uniformity control device. It includes a deposition vacuum chamber, with a gas source distribution component fixedly installed on the top of the chamber. A substrate support platform is fixedly installed on the bottom inner side of the chamber, and a temperature control component is located on the outer side of the substrate support platform. An airflow guiding component is located on the inner side of the chamber. The gas source distribution component, through a main gas source pipeline and a diversion valve assembly, can independently adjust the gas flow rate of multiple spray heads. The fan-shaped spray nozzle design at the bottom of the spray heads and the overlapping area of ​​adjacent spray nozzles ensure uniform coverage of the deposition gas on the wafer surface, avoiding the edge effect of traditional single-nozzle gas supply. The control panel's precise control of the diversion valve assembly dynamically adjusts the gas flow rate according to the deposition requirements of different areas of the wafer, ensuring the consistency of large-area deposition from the source.

Description

Technical Field

[0001] This utility model relates to the field of wafer deposition uniformity control technology, and in particular to a wafer-level large-area deposition uniformity control device. Background Technology

[0002] In semiconductor manufacturing, optical thin films, and other fields, wafer-level large-area deposition technology is a key process for fabricating high-performance devices. The uniformity of deposition directly affects the electrical performance, optical properties, and reliability of the devices. Existing deposition equipment has many limitations.

[0003] Existing gas source control methods suffer from uneven gas distribution, with traditional single-path gas supply failing to cover large-area wafers, leading to significant differences in deposition rates between the edge and center regions. Insufficient substrate temperature control precision results in localized overheating or temperature gradients causing uneven film stress and compositional deviations. Airflow disturbances have a significant impact, with turbulent airflow within the vacuum chamber easily causing imbalances in the distribution of deposited particles, particularly hindering uniformity during large-area deposition. Furthermore, the substrate orientation adjustment is inflexible, unable to adjust height or angle in real-time according to deposition requirements, further exacerbating deposition deviations. These issues result in low deposition yield for large-area wafers, restricting the mass production efficiency of high-end devices. Therefore, we propose a wafer-level large-area deposition uniformity control device. Utility Model Content

[0004] The purpose of this invention is to provide a wafer-level large-area deposition uniformity control device, which solves the existing problems.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A wafer-level large-area deposition uniformity control device includes a deposition vacuum chamber. A gas source distribution component is fixedly installed on the top of the deposition vacuum chamber. A substrate support stage is fixedly installed on the bottom inner side of the deposition vacuum chamber. A temperature control component is provided on the outer side of the substrate support stage. An airflow guiding component is provided on the inner side of the deposition vacuum chamber. A vacuum pumping component and a control panel are fixedly installed on the outer side of the deposition vacuum chamber.

[0007] Preferably, the gas source distribution assembly includes a main gas source pipeline, a diversion valve group, and multiple spray heads. One end of the main gas source pipeline extends to the inner side of the deposition vacuum chamber. The diversion valve group is fixedly installed on the outer side of the main gas source pipeline. The multiple spray heads are evenly distributed on the top inner side of the deposition vacuum chamber. The spray heads are connected to the main gas source pipeline, and the diversion valve group is electrically connected to the control panel.

[0008] Preferably, the substrate support stage includes a rotary drive motor, a lifting column, and a vacuum suction cup. The rotary drive motor is fixedly installed on the bottom outer side of the deposition vacuum chamber, the lifting column is fixedly installed on the output end of the rotary drive motor, and the vacuum suction cup is fixedly installed on the top of the lifting column. The top of the vacuum suction cup has multiple suction holes.

[0009] Preferably, the temperature control component includes an annular heating tube, a temperature sensor, and a cooling coil. The annular heating tube and the cooling coil are alternately arranged around the outside of the substrate support stage. The temperature sensor is fixedly installed on the inside of the vacuum suction cup. The annular heating tube, the temperature sensor, and the cooling coil are all electrically connected to the control panel.

[0010] Preferably, the airflow guiding assembly includes a guide ring, an adjustable baffle, and a driving cylinder. The guide ring is fixedly installed on the inner wall of the deposition vacuum chamber, and a plurality of guide holes are opened on the inner side of the guide ring. The driving cylinder is fixedly installed on the outer side of the guide ring, and the adjustable baffle is fixedly installed on the output end of the driving cylinder. The position of the adjustable baffle corresponds to that of the guide holes.

[0011] Preferably, the vacuum pumping assembly includes a vacuum pump, a pumping pipe, and a pressure sensor. The two ends of the pumping pipe are respectively connected to the deposition vacuum chamber and the vacuum pump. The pressure sensor is fixedly installed on the top inner side of the deposition vacuum chamber. Both the vacuum pump and the pressure sensor are electrically connected to the control panel.

[0012] Preferably, a baffle ring is fixedly installed on the outer side of the vacuum suction cup, and the height of the baffle ring is higher than the top plane of the vacuum suction cup.

[0013] Preferably, the bottom of the spray head is provided with a fan-shaped spray nozzle, and there is an overlapping area between the fan-shaped spray nozzles of adjacent spray heads.

[0014] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0015] 1. This utility model discloses a wafer-level large-area deposition uniformity control device. The gas source distribution component, through a main gas source pipeline and a diversion valve group, can independently adjust the gas flow rate of multiple spray heads. The fan-shaped spray nozzle design at the bottom of the spray head and the overlapping area of ​​adjacent spray nozzles ensure that the deposition gas forms a uniform coverage on the wafer surface, avoiding the edge effect of traditional single-nozzle gas supply. The control panel's precise control of the diversion valve group can dynamically adjust the gas flow rate according to the deposition requirements of different areas of the wafer, ensuring the consistency of large-area deposition from the source.

[0016] 2. This utility model discloses a wafer-level large-area deposition uniformity control device. A rotating drive motor on the W-component substrate support stage drives a vacuum chuck to rotate at a uniform speed, ensuring uniform particle reception across all areas of the wafer. A lifting column adjusts the substrate height to accommodate different deposition distance requirements. The vacuum chuck securely fixes the wafer through suction holes, and an outer baffle ring blocks edge turbulence, reducing airflow interference with wafer edge deposition and ensuring uniform stress and stable deposition across the substrate. The temperature control component features alternating ring-shaped heating and cooling coils. A temperature sensor monitors the vacuum chuck temperature in real time, and a control panel implements closed-loop control to precisely maintain substrate temperature stability. This design effectively eliminates temperature gradients, avoiding problems such as uneven film composition and stress concentration caused by localized temperature fluctuations, making it particularly suitable for temperature-sensitive deposition processes. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of this utility model, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a three-dimensional structural schematic diagram of a wafer-level large-area deposition uniformity control device proposed in this utility model.

[0019] Figure 2 This is a partial three-dimensional structural schematic diagram of a wafer-level large-area deposition uniformity control device proposed in this utility model.

[0020] Figure 3 This is a partial three-dimensional structural diagram of the main air source pipeline, the diversion valve group, and the spray head proposed in this utility model.

[0021] Figure 4 This is a partial three-dimensional structural diagram of the annular heating tube, temperature sensor, and cooling coil proposed in this utility model.

[0022] In the diagram: 1. Deposition vacuum chamber; 2. Gas source distribution assembly; 3. Substrate support platform; 4. Temperature control assembly; 5. Airflow guiding assembly; 6. Vacuum pumping assembly; 7. Control panel; 21. Main gas source pipeline; 22. Diverter valve assembly; 23. Spray head; 31. Rotary drive motor; 32. Lifting column; 33. Vacuum suction cup; 34. Adsorption hole; 41. Annular heating tube; 42. Temperature sensor; 43. Cooling coil; 51. Guide ring; 52. Adjustable baffle; 53. Drive cylinder; 54. Guide hole; 61. Vacuum pump; 62. Pumping pipeline; 63. Pressure sensor; 35. Baffle ring; 24. Fan-shaped spray nozzle. Detailed Implementation

[0023] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present utility model.

[0024] refer to Figure 1-4 A wafer-level large-area deposition uniformity control device includes a deposition vacuum chamber 1. A gas source distribution component 2 is fixedly installed on the top of the deposition vacuum chamber 1. A substrate support stage 3 is fixedly installed on the bottom inner side of the deposition vacuum chamber 1. A temperature control component 4 is arranged on the outer side of the substrate support stage 3. An airflow guiding component 5 is arranged on the inner side of the deposition vacuum chamber 1. A vacuum pumping component 6 and a control panel 7 are fixedly installed on the outer side of the deposition vacuum chamber 1. The gas source distribution component 2, through a main gas source pipe 21 and a diversion valve group 22, can independently adjust the gas flow rate of multiple spray heads 23. The fan-shaped spray nozzles 24 at the bottom of the spray heads 23 and the overlapping area of ​​adjacent spray nozzles ensure the deposition gas... A uniform coverage is formed on the wafer surface, avoiding the edge effect of traditional single-nozzle gas supply; the control panel 7 precisely controls the diversion valve group 22, which can dynamically adjust the gas flow rate according to the deposition requirements of different areas of the wafer, ensuring the consistency of large-area deposition from the source; in this embodiment, the gas source distribution component 2 includes a main gas source pipe 21, a diversion valve group 22 and multiple sets of spray heads 23. One end of the main gas source pipe 21 extends to the inside of the deposition vacuum chamber 1, the diversion valve group 22 is fixedly installed on the outside of the main gas source pipe 21, and multiple sets of spray heads 23 are evenly distributed on the top inside of the deposition vacuum chamber 1. The spray heads 23 are connected to the main gas source pipe 21, and the diversion valve group 22 is electrically connected to the control panel 7.

[0025] In this embodiment, the substrate support stage 3 includes a rotary drive motor 31, a lifting column 32, and a vacuum chuck 33. The rotary drive motor 31 is fixedly installed on the bottom outer side of the deposition vacuum chamber 1, the lifting column 32 is fixedly installed on the output end of the rotary drive motor 31, and the vacuum chuck 33 is fixedly installed on the top of the lifting column 32. The top of the vacuum chuck 33 has multiple adsorption holes 34. The rotary drive motor 31 of the substrate support stage 3 drives the vacuum chuck 33 to rotate at a uniform speed, so that each area of ​​the wafer receives the deposited particles evenly. The lifting column 32 can adjust the substrate height to adapt to different deposition distances. Requirements: The vacuum chuck 33 securely fixes the wafer through the adsorption hole 34, and the outer baffle ring 35 can block edge turbulence, reduce the interference of airflow on the wafer edge deposition, and ensure that the substrate is uniformly stressed and the deposition is stable. In this embodiment, the temperature control component 4 includes an annular heating tube 41, a temperature sensor 42 and a cooling coil 43. The annular heating tube 41 and the cooling coil 43 are alternately arranged around the outside of the substrate support stage 3, and the temperature sensor 42 is fixedly installed on the inside of the vacuum chuck 33. The annular heating tube 41, the temperature sensor 42 and the cooling coil 43 are all electrically connected to the control panel 7.

[0026] In this embodiment, the airflow guiding component 5 includes a guide ring 51, an adjustable baffle 52, and a driving cylinder 53. The guide ring 51 is fixedly installed on the inner wall of the deposition vacuum chamber 1, and multiple guide holes 54 are opened on the inner side of the guide ring 51. The driving cylinder 53 is fixedly installed on the outer side of the guide ring 51, and the adjustable baffle 52 is fixedly installed on the output end of the driving cylinder 53. The position of the adjustable baffle 52 corresponds to that of the guide holes 54. The annular heating tube 41 and the cooling coil 43 of the temperature control component 4 are alternately distributed around the temperature. The temperature of the vacuum suction cup 33 is monitored in real time by the temperature sensor 42 and controlled by the controller. Panel 7 implements closed-loop control to precisely maintain the substrate temperature stability. This design can effectively eliminate temperature gradients and avoid problems such as uneven film composition and stress concentration caused by local temperature fluctuations. It is especially suitable for temperature-sensitive deposition processes. In this embodiment, the vacuum pumping assembly 6 includes a vacuum pump 61, a pumping pipe 62, and a pressure sensor 63. The two ends of the pumping pipe 62 are connected to the deposition vacuum chamber 1 and the vacuum pump 61, respectively. The pressure sensor 63 is fixedly installed on the inner top of the deposition vacuum chamber 1. Both the vacuum pump 61 and the pressure sensor 63 are electrically connected to the control panel 7.

[0027] In this embodiment, a baffle ring 35 is fixedly installed on the outer side of the vacuum chuck 33, and the height of the baffle ring 35 is higher than the top plane of the vacuum chuck 33; the control panel 7 integrates functions such as gas source distribution, substrate adjustment, temperature control, airflow guidance and vacuum pumping, realizing fully automated control of the entire process; operators can quickly adapt to the process requirements of different wafer sizes and deposition materials by preset parameters or real-time adjustments, reducing errors caused by manual intervention. At the same time, pressure sensors 63, temperature sensors 42 and other sensors provide real-time feedback data, which facilitates process optimization and quality traceability, greatly improving the efficiency and reliability of deposition production; in this embodiment, a fan-shaped spray nozzle 24 is opened at the bottom of the spray head 23, and there is an overlapping area between the fan-shaped spray nozzles 24 of adjacent spray heads 23.

[0028] The implementation principle of a wafer-level large-area deposition uniformity control device in this embodiment is as follows: the gas source distribution component 2, through the main gas source pipeline 21 and in conjunction with the diversion valve group 22, can independently adjust the gas flow rate of multiple spray heads 23; the fan-shaped spray nozzle 24 at the bottom of the spray head 23 and the overlapping area of ​​adjacent spray nozzles ensure that the deposition gas forms a uniform coverage on the wafer surface, avoiding the edge effect of traditional single-nozzle gas supply; the control panel 7 precisely controls the diversion valve group 22, which can dynamically adjust the gas flow rate according to the deposition requirements of different areas of the wafer, ensuring the consistency of large-area deposition from the source;

[0029] The rotary drive motor 31 of the substrate support stage 3 drives the vacuum chuck 33 to rotate at a uniform speed, so that all areas of the wafer can receive the deposited particles evenly. The lifting column 32 can adjust the height of the substrate to adapt to different deposition distance requirements. The vacuum chuck 33 firmly fixes the wafer through the adsorption hole 34, and the outer baffle ring 35 can block edge turbulence and reduce the interference of airflow on the deposition of wafer edges, ensuring that the substrate is uniformly stressed and the deposition is stable. The annular heating tube 41 and cooling coil 43 of the temperature control component 4 are alternately distributed around the substrate. The temperature sensor 42 monitors the temperature of the vacuum chuck 33 in real time, and the control panel 7 realizes closed-loop control to accurately maintain the substrate temperature stability. This design can effectively eliminate temperature gradients and avoid problems such as uneven film composition and stress concentration caused by local temperature fluctuations. It is especially suitable for temperature-sensitive deposition processes.

[0030] The airflow guiding component 5's guide ring 51 guides the deposition gas through the guide hole 54 to form an orderly flow field. The drive cylinder 53 controls the adjustable baffle 52 to adjust the opening of the guide hole 54, which can dynamically optimize the airflow speed and direction according to the deposition stage. In conjunction with the vacuum pump 61 and pressure sensor 63 of the vacuum pumping component 6, it can accurately maintain the vacuum level in the deposition vacuum chamber 1, reduce the influence of airflow disturbance on the trajectory of deposition particles, and further improve the uniformity of large-area deposition.

[0031] The control panel 7 integrates functions such as gas source distribution, substrate adjustment, temperature control, airflow guidance, and vacuum pumping, realizing fully automated control of the entire process. Operators can quickly adapt to the process requirements of different wafer sizes and deposition materials by preset parameters or real-time adjustments, reducing errors caused by manual intervention. At the same time, pressure sensor 63, temperature sensor 42, and other sensors provide real-time feedback data, facilitating process optimization and quality traceability, and significantly improving the efficiency and reliability of deposition production.

[0032] In the description of this specification, references to terms such as "an embodiment," "example," "specific example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0033] The foregoing has provided a detailed description of the wafer-level large-area deposition uniformity control device provided by this utility model. Specific embodiments have been used to illustrate the principle and implementation of this utility model. The descriptions of the embodiments above are merely for the purpose of helping to understand the method and core idea of ​​this utility model. It should be noted that those skilled in the art can make various improvements and modifications to this utility model without departing from its principles, and these improvements and modifications also fall within the protection scope of the claims of this utility model.

Claims

1. A wafer-level large-area deposition uniformity control device, characterized in that, include: A deposition vacuum chamber (1) is provided with a gas source distribution assembly (2) fixedly installed on the top of the deposition vacuum chamber (1), a substrate support stage (3) fixedly installed on the bottom inner side of the deposition vacuum chamber (1), a temperature control assembly (4) provided on the outer side of the substrate support stage (3), an airflow guide assembly (5) provided on the inner side of the deposition vacuum chamber (1), and a vacuum pumping assembly (6) and a control panel (7) fixedly installed on the outer side of the deposition vacuum chamber (1).

2. The wafer-level large-area deposition uniformity control device of claim 1, wherein, The gas source distribution assembly (2) includes a main gas source pipe (21), a diversion valve group (22), and multiple spray heads (23). One end of the main gas source pipe (21) extends to the inner side of the deposition vacuum chamber (1). The diversion valve group (22) is fixedly installed on the outer side of the main gas source pipe (21). The multiple spray heads (23) are evenly distributed on the inner side of the top of the deposition vacuum chamber (1). The spray heads (23) are connected to the main gas source pipe (21). The diversion valve group (22) is electrically connected to the control panel (7).

3. The wafer-level large-area deposition uniformity control device of claim 1, wherein, The substrate support platform (3) includes a rotary drive motor (31), a lifting column (32), and a vacuum suction cup (33). The rotary drive motor (31) is fixedly installed on the bottom outer side of the deposition vacuum chamber (1). The lifting column (32) is fixedly installed on the output end of the rotary drive motor (31). The vacuum suction cup (33) is fixedly installed on the top of the lifting column (32). The top of the vacuum suction cup (33) is provided with multiple adsorption holes (34).

4. The wafer-level large-area deposition uniformity control device of claim 1, wherein, The temperature control component (4) includes an annular heating tube (41), a temperature sensor (42), and a cooling coil (43). The annular heating tube (41) and the cooling coil (43) are alternately arranged around the outside of the substrate support platform (3). The temperature sensor (42) is fixedly installed on the inside of the vacuum suction cup (33). The annular heating tube (41), the temperature sensor (42), and the cooling coil (43) are all electrically connected to the control panel (7).

5. The wafer-level large-area deposition uniformity control device of claim 1, wherein, The airflow guiding assembly (5) includes a guide ring (51), an adjustable baffle (52), and a driving cylinder (53). The guide ring (51) is fixedly installed on the inner wall of the deposition vacuum chamber (1). Multiple guide holes (54) are opened on the inner side of the guide ring (51). The driving cylinder (53) is fixedly installed on the outer side of the guide ring (51). The adjustable baffle (52) is fixedly installed on the output end of the driving cylinder (53). The position of the adjustable baffle (52) corresponds to that of the guide hole (54).

6. The wafer-level large-area deposition uniformity control device of claim 1, wherein, The vacuum pumping assembly (6) includes a vacuum pump (61), a pumping pipe (62), and a pressure sensor (63). The two ends of the pumping pipe (62) are connected to the deposition vacuum chamber (1) and the vacuum pump (61) respectively. The pressure sensor (63) is fixedly installed on the top inner side of the deposition vacuum chamber (1). Both the vacuum pump (61) and the pressure sensor (63) are electrically connected to the control panel (7).

7. The wafer-level large-area deposition uniformity control device of claim 3, wherein, The outer side of the vacuum chuck (33) is fixedly provided with a flow baffle ring (35), and the height of the flow baffle ring (35) is higher than the top plane of the vacuum chuck (33).

8. The wafer-level large-area deposition uniformity control device of claim 2, wherein, The bottom of the spray head (23) is provided with a fan-shaped spray opening (24), and there is an overlapping area between adjacent fan-shaped spray openings (24) of the spray head (23).

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