A type of chip LED with near-infrared spectrum

Abstract

This invention discloses a surface-mount LED chip with near-infrared spectrum, belonging to the field of semiconductor light-emitting device technology, specifically a ceramic substrate. The ceramic substrate has a soldering mounting area where a near-infrared chip is soldered. A spectral optimization structure is disposed on top of the soldering mounting area. A transparent encapsulating layer is disposed on top of the near-infrared chip, and near-infrared transmissive phosphor is disposed within the transparent encapsulating layer. A heat dissipation component is disposed on the outside of the ceramic substrate. This invention, by setting a spectral optimization structure and placing phosphor within the transparent encapsulating layer, can significantly improve the purity of the near-infrared spectrum. Combined with a silicone convex lens and anti-reflection film on the outside of the diffuser, it can further improve the light extraction efficiency of the near-infrared chip, thus effectively improving the efficiency of the near-infrared chip's divergent spectrum.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor light-emitting device technology, and in particular to a patch LED with near-infrared spectrum. Background Technology

[0002] Surface mount LED chips are LED light-emitting devices packaged using surface mount technology (SMT). Their core characteristics and structure are as follows: Physical form: Rectangular thin-film structure (common sizes 0201 / 0402 / 2835 / 5050, etc.), without the metal leads of through-hole LEDs. Packaging characteristics: Directly mounted on the circuit board surface via solder pads, requiring no through-hole mounting. Broad-spectrum near-infrared (NIR) refers to near-infrared radiation with wavelengths between 700-2500nm, characterized by strong continuity and wide band coverage (distinguished from narrow-spectrum light sources with a single peak wavelength).

[0003] Near-infrared (700-2500nm) surface mount LEDs are increasingly used in fields such as biosensing and medical diagnostics. However, existing surface mount LEDs generally use epoxy resin as the encapsulation material after soldering the infrared chip. This has a serious optical attenuation problem in the near-infrared band. Epoxy resin easily absorbs light waves in the near-infrared spectrum, resulting in a significant reduction in near-infrared light output efficiency.

[0004] The purpose of this invention is to provide a patch LED with near-infrared spectrum to solve the problems mentioned in the background art. Utility Model Content

[0005] The purpose of this invention is to provide a patch LED with near-infrared spectrum to solve the problems mentioned in the background art.

[0006] To achieve the above objectives, this utility model provides the following technical solution: a chip LED with near-infrared spectrum, a ceramic substrate, wherein the ceramic substrate has a welding mounting area, and a near-infrared chip is welded and connected in the welding mounting area;

[0007] A spectrally optimized structure is positioned at the top of the welding installation area;

[0008] The near-infrared chip has a transparent encapsulating layer on top, and near-infrared transmissive phosphor is disposed inside the transparent encapsulating layer;

[0009] The heat dissipation component is located on the outside of the ceramic substrate.

[0010] Furthermore, the near-infrared chip emits wavelengths of -nm, and the top of the ceramic substrate is provided with several conductive lines.

[0011] Furthermore, the spectral optimization structure alters the purity of the near-infrared chip's emission spectrum.

[0012] Furthermore, the spectral optimization structure includes a diffusion cover disposed on top of the welding mounting area, a silicone convex lens disposed on the outside of the diffusion cover, and an anti-reflection film disposed on the outside of the silicone convex lens.

[0013] Furthermore, the heat dissipation component includes several copper foils disposed on the outer side of the ceramic substrate, and the bottom of the ceramic substrate is provided with heat dissipation holes and heat dissipation grooves.

[0014] Compared with the prior art, the present invention has the following beneficial effects:

[0015] This invention improves the purity of the near-infrared spectrum by setting a spectral optimization structure and placing phosphor inside the transparent encapsulation layer. Combined with the silicone convex lens and anti-reflection film on the outside of the diffuser, the light extraction efficiency of the near-infrared chip can be further improved. This effectively enhances the efficiency of the near-infrared chip's divergence spectrum. By setting a heat dissipation component, with a ceramic substrate and copper foil placed on the sidewall of the ceramic substrate, the heat generated during the operation of the near-infrared chip can be effectively dissipated, thereby reducing thermal resistance. Attached Figure Description

[0016] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the structure of this utility model;

[0018] Figure 2 This is a schematic diagram of the heat dissipation component in this utility model;

[0019] Figure 3 This is a schematic diagram of the spectral optimization structure in this utility model.

[0020] Explanation of reference numerals in the attached figures:

[0021] In the picture:

[0022] 1. Ceramic substrate; 2. Conductive circuit; 3. Spectral optimization structure; 31. Antireflective coating; 32. Silicone convex lens; 33. Diffuser; 4. Heat dissipation component; 41. Copper foil; 42. Heat dissipation groove; 43. Heat dissipation hole; 5. Transparent encapsulating adhesive layer; 6. Near-infrared chip; 7. Soldering and mounting area. Detailed Implementation

[0023] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. However, it will be apparent to those skilled in the art that the present invention can be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described in order to avoid confusion with the present invention.

[0024] Unless otherwise defined, the directions mentioned herein, such as up, down, left, right, front, back, inside, and outside, are based on the directions shown in the figures of this utility model, and are explained here together.

[0025] The connection method can be any existing method, such as bonding, welding, or bolting, depending on the actual needs.

[0026] Please see Figures 1 to 3 As shown, a chip LED with near-infrared spectrum includes a ceramic substrate 1, wherein the ceramic substrate 1 is a high thermal conductivity alumina ceramic substrate 1, which has good heat dissipation. The ceramic substrate 1 has a welding mounting area 7, in which a near-infrared chip 6 is welded and connected. The near-infrared chip 6 is a device well known to those skilled in the art. The emission wavelength of the near-infrared chip 6 is 750-1100nm. Several conductive lines 2 are provided on the top of the ceramic substrate 1. The conductive lines 2 are made of silver-copper alloy and are electrically connected to the near-infrared chip 6.

[0027] The spectral optimization structure 3, located on top of the welding mounting area 7, is used to improve the purity of the emission spectrum of the near-infrared chip 6. A transparent encapsulating layer 5 is located on top of the near-infrared chip 6, and near-infrared transmissive phosphor is disposed within the transparent encapsulating layer 5. The near-infrared transmissive phosphor, which is yttrium aluminum garnet-based phosphor, is uniformly dispersed in the transparent encapsulating layer covering the chip. It is used to excite wavelength matching chip emission spectrum. The spectral optimization structure 3 includes a diffuser 33 located on top of the welding mounting area 7. A silicone convex lens 32 is located on the outside of the diffuser 33. The function of the silicone convex lens 32 is to further diffuse the spectrum emitted by the near-infrared chip 6 and improve transmittance. An anti-reflection film 31 is located on the outside of the silicone convex lens 32. The function of the anti-reflection film 31 is to further increase the spectral transmittance.

[0028] The heat dissipation component 4 is disposed on the outside of the ceramic substrate 1 to reduce the heat generated by the near-infrared chip 6 during operation. The heat dissipation component 4 includes several copper foils 41 disposed on the outside of the ceramic substrate 1. The copper foils 41 have good heat dissipation properties. The bottom of the ceramic substrate 1 is provided with heat dissipation holes 43 and heat dissipation grooves 42. The characteristics of the ceramic substrate 1 itself, together with the heat dissipation holes 43 and heat dissipation grooves 42, can effectively dissipate the heat generated by the near-infrared chip 6 during operation, thereby ensuring the working efficiency of the near-infrared chip 6.

[0029] Working principle: When in use, the near-infrared chip 6 in the welding and mounting area 7 starts to work. The emitted spectrum passes through the transparent encapsulating adhesive layer 5 and then diffuses through the diffuser 33. Then, it passes through the silicone convex lens 32 to further improve the transmittance. In conjunction with the anti-reflection film 31 on the outside of the silicone convex lens 32, the transmittance is further improved, thereby greatly improving the output efficiency of near-infrared light. During this period, the ceramic substrate 1 and the copper foil 41, together with the heat sink 42 and heat dissipation holes 43, can effectively dissipate heat from the near-infrared chip 6.

[0030] It should be noted that, in this document, relational terms such as "one" and "two" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, the phrase "comprising an element defined as..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0031] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A patch lamp bead with near-infrared spectrum, characterized in that: include A ceramic substrate (1) is provided with a welding mounting area (7), and a near-infrared chip (6) is welded and connected in the welding mounting area (7). A spectral optimization structure (3) is set on top of the welding mounting area (7); The near-infrared chip (6) has a transparent encapsulating layer (5) on top, and the transparent encapsulating layer (5) contains near-infrared transmissive phosphor. Heat dissipation component (4) is disposed on the outside of ceramic substrate (1).

2. The patch lamp bead with near-infrared spectrum according to claim 1, characterized in that: The near-infrared chip (6) emits wavelengths of 750-1100nm, and a number of conductive lines (2) are provided on the top of the ceramic substrate (1). 3.The patch lamp bead with near-infrared spectrum according to claim 1, characterized in that: The spectral optimization structure (3) alters the purity of the near-infrared chip's emission spectrum.

4. The patch lamp bead with near-infrared spectrum according to claim 1, characterized in that: The spectral optimization structure (3) includes a diffuser (33) disposed on top of the welding mounting area (7), a silicone convex lens (32) disposed on the outside of the diffuser (33), and an anti-reflection film (31) disposed on the outside of the silicone convex lens (32).

5. The patch lamp bead with near-infrared spectrum according to claim 1, characterized in that: The heat dissipation component (4) includes several copper foils (41) disposed on the outside of the ceramic substrate (1), and the bottom of the ceramic substrate (1) is provided with heat dissipation holes (43) and heat dissipation grooves (42).

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