Anti-reflective optical system and laser annealing apparatus

Abstract

This invention relates to the field of semiconductor technology, providing an anti-reflection light system and a laser annealing device. The anti-reflection light system combines an optical modulation component, a polarization beam splitter, and a first polarization state conversion element. This allows reflected light from the target object's surface to be received by a reflected light receiver, effectively preventing the reflected light from being reflected back to the light source and avoiding damage. This significantly reduces costs and facilitates the mass production of precision semiconductor processing equipment. Furthermore, this system eliminates the need to tilt the optical path spindle or the target object surface, resulting in a better final spot morphology, symmetry, and significantly improved spot uniformity. This, in turn, enhances the quality of the shaped spot, improves laser processing precision, and is beneficial for the application of high-precision laser equipment.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to an anti-reflective light system and a laser annealing device. Background Technology

[0002] Currently, the basic principle of laser annealing equipment is to use a laser to generate a laser beam, use an optical system to shape the laser beam, shape the spot required for the process at the image plane position, and perform the annealing process on the wafer surface.

[0003] Because the surface of a wafer has a high reflectivity, averaging over 30%, laser beams incident on the wafer surface will be reflected back into the laser. This reflected light will damage the laser crystal, thus causing the laser to fail.

[0004] Existing solutions typically involve tilting the optical path axis or the wafer surface to create an angle of more than 3° between the incident and reflected light, preventing the reflected light from returning to the laser. However, because the optical path axis is not perpendicular to the wafer surface, the uniformity of the final laser spot deteriorates, thus affecting the processing. Summary of the Invention

[0005] This invention provides an anti-reflective light system and a laser annealing device to address the deficiencies in the prior art.

[0006] This utility model provides an anti-reflection light system, including: a light modulation component, a polarization beam splitter, a first polarization state conversion component, and a reflected light receiver;

[0007] The optical modulation component is used to receive a target linearly polarized laser beam, convert the target linearly polarized laser beam into a first P-beam, and incident the first P-beam onto the polarization beam splitter. The first P-beam is transmitted through the polarization beam splitter to the first polarization state conversion element. The first polarization state conversion element is used to convert the first P-beam into a first circularly polarized light, and the first circularly polarized light is used to incident on the target object.

[0008] The first polarization state conversion element is also used to receive the second circularly polarized light reflected by the target object, and convert the second circularly polarized light into a first S-beam before it is incident on the polarization beam splitter element. The first S-beam is reflected by the polarization beam splitter element to the reflected light receiver.

[0009] According to the present invention, an anti-reflective light system is provided, wherein the light modulation component includes a first light modulator;

[0010] The first optical modulator is used to convert the target linearly polarized laser beam into the first P-light.

[0011] According to the present invention, an anti-reflection light system is provided, wherein the first light modulator includes a first base layer, a first protective layer, a first liquid crystal layer, a second protective layer and a second base layer arranged sequentially along the transmission direction of the target linearly polarized laser beam;

[0012] The long axis of the first liquid crystal layer is in the same direction as the polarization direction of the S-light.

[0013] According to the present invention, an anti-reflective light system is provided, wherein the light modulation component includes a second light modulator and a second polarization state conversion element;

[0014] The second optical modulator is used to convert the target linearly polarized laser beam into a second S-beam;

[0015] The second polarization state conversion element is used to convert the second S-light into the first P-light.

[0016] According to the present invention, an anti-reflection light system is provided, wherein the second light modulator includes a first base layer, a first protective layer, a second liquid crystal layer, a second protective layer and a second base layer arranged sequentially along the transmission direction of the target linearly polarized laser beam;

[0017] The long axis of the second liquid crystal layer is in the same direction as the polarization direction of the P-light.

[0018] According to the anti-reflective light system provided by this utility model, both the first protective layer and the second protective layer are made of polyimide material; and / or,

[0019] Both the first base layer and the second base layer are made of fused silica material.

[0020] This utility model also provides a laser annealing device, including: a laser, a beam shaping system, and the above-mentioned anti-reflection light system;

[0021] The laser is used to generate an initial linearly polarized laser beam;

[0022] The beam shaping system is used to shape the initial linearly polarized laser beam to obtain the target linearly polarized laser beam, and then incident the target linearly polarized laser beam onto the anti-reflection light system to perform an annealing process on the target object.

[0023] According to the laser annealing apparatus provided by this utility model, the beam shaping system includes: a beam expanding system and a beam homogenizing module arranged sequentially along the transmission direction of the initial linearly polarized laser beam.

[0024] The laser annealing device provided by this utility model further includes a focusing lens group, which is disposed between the anti-reflective light system and the target object.

[0025] According to the laser annealing apparatus provided by this utility model, the initial linearly polarized laser beam includes P-beam and S-beam.

[0026] The anti-reflection light system and laser annealing device provided by this utility model combine an optical modulation component, a polarization beam splitter, and a first polarization state conversion element. This allows reflected light from the target object's surface to be received by a reflected light receiver, effectively preventing the reflected light from being reflected back to the light source and avoiding damage. This significantly reduces costs and facilitates the mass production of semiconductor precision processing equipment. Furthermore, this system eliminates the need to tilt the optical path spindle or the target object surface, resulting in a better final spot morphology, symmetry, and significantly improved spot uniformity. This, in turn, enhances the quality of the shaped spot, improves laser processing precision, and is beneficial for the application of high-precision laser equipment. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in this invention or related technologies, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 This is a schematic diagram of the structure of a conventional laser annealing device provided by this utility model;

[0029] Figure 2 This is a schematic diagram of the reflected optical path of a conventional laser annealing device provided by this utility model;

[0030] Figure 3 This is a schematic diagram of the reflected light path when the wafer surface is tilted in a conventional laser annealing apparatus provided by this utility model;

[0031] Figure 4 This is the final spot pattern obtained on the wafer surface when tilting the wafer surface in the conventional laser annealing apparatus provided by this utility model;

[0032] Figure 5 This is one of the structural schematic diagrams of the anti-reflective light system provided by this utility model;

[0033] Figure 6 It is the final light spot pattern on the surface of the target object using the anti-reflective light system provided by this utility model;

[0034] Figure 7 This is a schematic diagram of the structure of the first optical modulator in the anti-reflective light system provided by this utility model;

[0035] Figure 8This is a schematic diagram of the fabrication process of the first optical modulator in the anti-reflective light system provided by this utility model;

[0036] Figure 9 This is the second schematic diagram of the anti-reflective light system provided by this utility model;

[0037] Figure 10 This is a schematic diagram of the structure of the second optical modulator in the anti-reflective light system provided by this utility model;

[0038] Figure 11 This is a schematic diagram of the fabrication process of the second optical modulator in the anti-reflective light system provided by this utility model;

[0039] Figure 12 This is one of the structural schematic diagrams of the laser annealing device provided by this utility model;

[0040] Figure 13 This is the second structural schematic diagram of the laser annealing device provided by this utility model. Detailed Implementation

[0041] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0042] The terms "first" and "second" in the specification and claims of this utility model may explicitly or implicitly include one or more of the features. In the description of the utility model, unless otherwise stated, "a plurality of" means two or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0043] A schematic diagram of a conventional laser annealing apparatus is shown below. Figure 1 As shown, the device comprises a laser 11, a beam expander 12, a beam homogenizing module 13, and a Fourier lens group 14. The laser 11 generates a laser beam, the beam expander 12 expands the laser beam, and the beam homogenizing module 13 makes the energy distribution of the expanded laser beam more uniform. It may include at least one of the following components: a homogenizer (homogenizer), a beam shaper, a microlens array, a random microlens array, and a compound eye lens array. The Fourier lens group 14 focuses the output of the beam homogenizing module 13 onto the surface of the wafer 15.

[0044] Among them, the homogenizer can also be called a laser homogenizer, homogenizer, laser homogenizing element, uniform spot diffraction element, laser homogenizer DOE, laser homogenizer, or laser diffuser.

[0045] Because the surface of wafer 15 has a high reflectivity, the laser beam incident on the surface of wafer 15 is reflected by the surface of wafer 15 and returns to laser 11 along the same path. The reflected light path is as follows: Figure 2 As shown. This reflected light can damage the crystal of laser 11, thereby causing laser 11 to be damaged.

[0046] To prevent reflected light from the surface of wafer 15 from being reflected back into laser 11 and damaging the laser crystal, which could lead to laser 11 failure, existing solutions typically involve tilting the optical path axis or the surface of wafer 15 to create an angle of more than 3° between the incident and reflected light, thus preventing the reflected light from being reflected back into laser 11. Figure 3 This is the reflected light path when the surface of the wafer is tilted (15°).

[0047] However, due to the angle between the optical path principal axis and the surface of wafer 15, the final spot pattern obtained on the surface of wafer 15 is as follows. Figure 4 As shown, the uniformity is poor, which affects the processing technology. Figure 4 The final spot pattern shows significant fluctuations in both the spot power W1 in the X direction and the spot power W2 in the Y direction.

[0048] Based on this, an anti-reflective light system is provided in this embodiment of the utility model.

[0049] Figure 5 This is a schematic diagram of the structure of an anti-reflective light system provided in an embodiment of this utility model, as shown below. Figure 5 As shown, the anti-reflection light system includes: a light modulation component 21, a polarization beam splitter 22, a first polarization state conversion component 23, and a reflected light receiver 24;

[0050] The optical modulation component 21 is used to receive the target linearly polarized laser beam, convert the target linearly polarized laser beam into a first P-beam, and incident the first P-beam onto the polarization beam splitter 22. The first P-beam is transmitted through the polarization beam splitter 22 to the first polarization state conversion element 23. The first polarization state conversion element 23 is used to convert the first P-beam into a first circularly polarized light, and the first circularly polarized light is used to incident on the target object 25.

[0051] The first polarization state conversion element 23 is also used to receive the second circularly polarized light reflected by the target object 25, and convert the second circularly polarized light into first S-beams which are then incident on the polarization beam splitter element 22. The first S-beams are reflected by the polarization beam splitter element 22 to the reflected light receiver 24.

[0052] Specifically, in the anti-reflection light system provided in this embodiment of the present invention, the light modulation component 21 can receive a target linearly polarized laser beam. This target linearly polarized laser beam can be a linearly polarized laser beam used for performing related process operations on the target object 25, and can be a mixed beam including P-beams and S-beams. This target linearly polarized laser beam can be a linearly polarized laser beam emitted by a laser, or it can be obtained by shaping an initial linearly polarized laser beam emitted by the laser; no specific limitation is made here.

[0053] The target object 25 has a certain reflectivity and can reflect light. The target object 25 can be a wafer requiring laser annealing or an object requiring laser shaping; no specific limitation is made here. Therefore, this anti-reflective light system can be applied in the field of laser annealing, as well as in laser industrial fields such as laser shaping equipment.

[0054] After receiving the target linearly polarized laser beam, the optical modulation component 21 can convert the target linearly polarized laser beam into a first P-beam, which refers to the P-beam obtained by converting the target linearly polarized laser beam. It can be understood that if the target linearly polarized laser beam includes both P-beams and S-beams, the optical modulation component 21 can convert only the S-beams into P-beams, ignoring the P-beams, and then mix the converted P-beams with the P-beams in the target linearly polarized laser beam to obtain the first P-beam. Alternatively, the optical modulation component 21 can first convert the P-beams in the target linearly polarized laser beam into S-beams, ignoring the S-beams, and then mix the converted S-beams with the S-beams in the target linearly polarized laser beam before converting them together to obtain the first P-beam.

[0055] The first P-beam output from the optical modulation component 21 is incident on the polarization beam splitter 22, and then transmitted through the polarization beam splitter 22 to the first polarization state conversion element 23. The polarization beam splitter 22 can be a polarizing beam splitter (PBS), a polarizing beam prism, etc. The polarization beam splitter 22 can transmit the P-beam and reflect the S-beam.

[0056] The first polarization state conversion element 23 can be a quarter-wave plate, which can be disposed in the transmission optical path of the polarization beam splitter 22 to convert the first P-light into first circularly polarized light, which refers to the circularly polarized light obtained by converting the first P-light. The first circularly polarized light can be incident on the target object 25 to perform relevant processing operations on the target object 25. For example, a focusing lens group 26 disposed between the first polarization state conversion element 23 and the target object 25 can be used to focus the first circularly polarized light onto the surface of the target object 25. The focusing lens group can be a Fourier lens group or other lens group, as long as it can focus the first circularly polarized light onto the surface of the target object 25.

[0057] The optical path axis of the anti-reflective light system is perpendicular to the surface of the target object 25, allowing the first circularly polarized light to be incident perpendicularly on the target object 25. The final light spot pattern obtained on the surface of the target object 25 is shown in the figure. Figure 6 As shown, the final light spot morphology is better, the light spot is symmetrical, and the light spot uniformity is greatly improved. Figure 6 The final spot pattern shows relatively small fluctuations in spot power W1 in the X direction and spot power W2 in the Y direction.

[0058] Understandably, since the reflected light from the surface of the target object 25 returns along the original path of the incident light, the second circularly polarized light reflected by the target object 25 can be received by the first polarization state conversion element 23. Here, the second circularly polarized light is the reflected light from the surface of the target object 25.

[0059] After receiving the second circularly polarized light, the first polarization state conversion element 23 can convert the second circularly polarized light into a first S-ray. The first S-ray is the S-ray obtained by converting the second circularly polarized light through the first polarization state conversion element 23.

[0060] The first S-beam can be incident on the polarization beam splitter 22 and reflected by the polarization beam splitter 22 to the reflected light receiver 24. The reflected light receiver 24 can be arranged in the reflected light path of the polarization beam splitter 22 to receive the first S-beam. The reflected light receiver 24 can be a photodetector, optical fiber, filter, etc.

[0061] The anti-reflection light system provided in this embodiment combines an optical modulation component, a polarization beam splitter, and a first polarization state conversion element. This allows reflected light from the target object's surface to be received by a reflected light receiver, effectively preventing the reflected light from being reflected back to the light source and avoiding damage. This significantly reduces costs and facilitates the mass production of semiconductor precision processing equipment. Furthermore, this system eliminates the need to tilt the optical path axis or the target object's surface, resulting in a better final spot shape, symmetry, and significantly improved spot uniformity. This, in turn, enhances the quality of the shaped spot, improves laser processing precision, and is beneficial for the application of high-precision laser equipment.

[0062] Based on the above embodiments, the anti-reflection light system provided in this utility model embodiment includes a first light modulator as the light modulation component;

[0063] The first optical modulator is used to convert the target linearly polarized laser beam into the first P-light.

[0064] Specifically, the optical modulation component 21 in the anti-reflection optical system may include a first optical modulator, which converts the target linearly polarized laser beam into a first P-light. That is, it can convert the S-light in the target polarized laser beam into P-light, and has no effect on the P-light in it. The converted P-light and the P-light in the target polarized laser beam together constitute the first P-light.

[0065] In this embodiment of the invention, the optical modulation component is constructed using a first optical modulator, which simplifies the optical path and enables rapid generation of the first P-light. Furthermore, using a separate first optical modulator further simplifies the structure of the optical modulation component, thereby simplifying the structure of the anti-reflective light system.

[0066] like Figure 7 As shown, based on the above embodiments, the anti-reflection light system provided in this utility model embodiment includes a first base layer 211, a first protective layer 212, a first liquid crystal layer 213, a second protective layer 214, and a second base layer 215 arranged sequentially along the transmission direction of the target linearly polarized laser beam; the long axis direction of the first liquid crystal layer 213 is the same as the polarization direction of the S-light.

[0067] Specifically, the first substrate layer 211 and the second substrate layer 215 are both substrate layers in the first optical modulator, the first protective layer 212 and the second protective layer 214 are both protective layers in the first optical modulator, and the first liquid crystal (LC) layer 213 is a liquid crystal layer in the first optical modulator. The long axis direction of the first liquid crystal layer 213 is the same as the polarization direction of the S-light. Figure 7 As shown in the image. Figure 7 The direction of the single arrow in the middle indicates the transmission direction of the target linearly polarized laser beam.

[0068] The first liquid crystal layer 213 can be composed of a uniaxial crystal and has the characteristics of a uniaxial crystal.

[0069] Both the first base layer 211 and the second base layer 215 can be made of fused silica or other base materials, without specific limitations. Both the first protective layer 212 and the second protective layer 214 can be made of polyimide or other protective materials.

[0070] In this embodiment of the present invention, since the long axis direction of the first liquid crystal layer is the same as the polarization direction of the S-light, the first optical modulator can convert the S-light in the target linearly polarized laser beam into P-light, and has no effect on the P-light in it. Then, the converted P-light and the P-light in the target polarized laser beam together constitute the first P-light.

[0071] Based on the above embodiments, the anti-reflective light system provided in this utility model embodiment is prepared by the following steps:

[0072] A first protective layer is coated on a first substrate layer, and a second protective layer is coated on a second substrate layer;

[0073] Orientation processes are performed on the first protective layer and the second protective layer, respectively;

[0074] The first protective layer and the second protective layer are positioned opposite each other, and the first base layer and the second base layer are aligned.

[0075] Liquid crystal with the same long axis as the polarization direction of S-light is injected into the internal space obtained by the cell to form a first liquid crystal layer, and the first light modulator is obtained by irradiating the first substrate layer and / or the second substrate layer with ultraviolet light.

[0076] Specifically, in the fabrication of the first optical modulator, such as Figure 8 As shown, a first protective layer 212 can be coated on the first base layer 211 first, and a second protective layer 214 can be coated on the second base layer 215.

[0077] Subsequently, an orientation process is performed on the first protective layer 212 and the second protective layer 214 respectively. The orientation process may include a rubbing orientation process, an oriented attachment (OA) orientation process, or other orientation processes.

[0078] Subsequently, the first protective layer 212 and the second protective layer 214 are aligned, and the first base layer 211 and the second base layer 215 are aligned.

[0079] Subsequently, liquid crystal with the same long axis direction as the polarization direction of S-light is injected into the internal space obtained by the cell to form the first liquid crystal layer.

[0080] Finally, the first light modulator is obtained by irradiating the first substrate 211 with ultraviolet (UV) light, or irradiating the second substrate 215, or simultaneously irradiating the first substrate 211 and the second substrate 215.

[0081] In this embodiment of the invention, the first optical modulator with a simple structure can be obtained through the above preparation method, which is convenient for saving hardware preparation costs.

[0082] Based on the above embodiments, the optical modulation component includes a second optical modulator and a second polarization state conversion element;

[0083] The second optical modulator is used to convert the target linearly polarized laser beam into a second S-beam;

[0084] The second polarization state conversion element is used to convert the second S-light into the first P-light.

[0085] Specifically, such as Figure 9 As shown, the optical modulation component 21 in the anti-reflection optical system may further include a second optical modulator 221 and a second polarization state conversion element 222;

[0086] The second optical modulator 221 converts the target linearly polarized laser beam into a second S-beam, that is, it can convert the P-beam in the target polarized laser beam into an S-beam, while having no effect on the S-beam in it, and then combines the converted S-beam with the S-beam in the target polarized laser beam to obtain the second S-beam.

[0087] Then, the second S-light is converted into the first P-light by the second polarization state conversion element 222. Here, the second polarization state conversion element 222 can be a half-wave plate.

[0088] In this embodiment of the invention, a second optical modulator and a second polarization state conversion element are combined to form an optical modulation component, which can simplify the optical path and quickly obtain the first P light.

[0089] like Figure 10 As shown, based on the above embodiment, the second optical modulator includes a first substrate layer 2211, a first protective layer 2212, a second liquid crystal layer 2213, a second protective layer 2214, and a second substrate layer 2215 arranged sequentially along the transmission direction of the target linearly polarized laser beam.

[0090] The long axis of the second liquid crystal layer 2213 is the same as the polarization direction of the P light.

[0091] Specifically, the first substrate layer 2211 and the second substrate layer 2215 are both substrate layers in the second optical modulator, the first protective layer 2212 and the second protective layer 2214 are both protective layers in the second optical modulator, and the second liquid crystal (LC) layer 2213 is the liquid crystal layer in the second optical modulator. The long axis direction of the second liquid crystal layer 2213 is the same as the polarization direction of the P-light, such as... Figure 10 As shown in the image. Figure 10 The direction of the single arrow in the middle indicates the transmission direction of the target linearly polarized laser beam. The second liquid crystal layer 2213 can be composed of a uniaxial crystal and has the characteristics of a uniaxial crystal.

[0092] Both the first base layer 2211 and the second base layer 2215 can be made of fused silica or other base materials, without specific limitations. Both the first protective layer 2212 and the second protective layer 2214 can be made of polyimide or other protective materials.

[0093] In this embodiment of the invention, since the long axis of the second liquid crystal layer is the same as the polarization direction of the P-light, the second optical modulator can convert the P-light in the target linearly polarized laser beam into S-light, and has no effect on the S-light therein. Thus, the converted S-light and the S-light in the target polarized laser beam together constitute the second S-light.

[0094] Based on the above embodiments, the anti-reflective light system provided in this utility model embodiment is prepared by the second light modulator based on the following steps:

[0095] A first protective layer is coated on a first substrate layer, and a second protective layer is coated on a second substrate layer;

[0096] Orientation processes are performed on the first protective layer and the second protective layer, respectively;

[0097] The first protective layer and the second protective layer are positioned opposite each other, and the first base layer and the second base layer are aligned.

[0098] Liquid crystal with the same long axis as the polarization direction of P light is injected into the internal space obtained by the cell to form a second liquid crystal layer, and the first substrate layer and / or the second substrate layer are irradiated with ultraviolet light to obtain the second light modulator.

[0099] Specifically, in the fabrication of the second optical modulator, such as Figure 11 As shown, a first protective layer 2212 can be coated on the first base layer 2211 first, and a second protective layer 2214 can be coated on the second base layer 2215.

[0100] Subsequently, an orientation process is performed on the first protective layer 2212 and the second protective layer 2214 respectively. The orientation process may include a rubbing orientation process, an oriented attachment (OA) orientation process, or other orientation processes.

[0101] Subsequently, the first protective layer 2212 and the second protective layer 2214 are aligned, and the first base layer 2211 and the second base layer 2215 are aligned.

[0102] Subsequently, liquid crystal with the same long axis direction as the polarization direction of P light is injected into the internal space obtained by the cell to form a second liquid crystal layer.

[0103] Finally, the first substrate 2211 is irradiated with ultraviolet (UV) light, or the second substrate 2215 is irradiated, or both the first substrate 2211 and the second substrate 2215 are irradiated simultaneously to obtain the second optical modulator.

[0104] In this embodiment of the invention, a second optical modulator with a simple structure can be obtained through the above-described preparation method, which helps to save on hardware preparation costs.

[0105] like Figure 12 As shown, based on the above embodiments, this utility model also provides a laser annealing device, including: a laser 121, a beam shaping system 122, and an anti-reflection light system 123 provided in the above embodiments;

[0106] Laser 121 is used to generate an initial linearly polarized laser beam;

[0107] The beam shaping system 122 is used to shape the initial linearly polarized laser beam to obtain the target linearly polarized laser beam, and then the target linearly polarized laser beam is incident on the anti-reflection light system 123 to perform an annealing process on the target object 124.

[0108] Specifically, in the laser annealing apparatus provided in this embodiment of the present invention, the laser 121 can generate an initial polarized laser beam, which can be a mixed light including P-light and S-light.

[0109] The beam shaping system 122 can shape the initial polarized laser beam so that the target linearly polarized laser beam can meet the light source requirements for the annealing process of the target object 124.

[0110] The target linearly polarized laser beam obtained by the beam shaping system 122 can be incident on the target object 124 through the anti-reflection light system 123. When the reflected light from the target object 124 enters the anti-reflection light system 123, it will not continue to be transmitted to the beam shaping system 122, thus preventing the reflected light from entering the laser 121 and causing damage to the laser 121.

[0111] Based on the above embodiments, the laser annealing apparatus provided in this utility model embodiment includes a beam shaping system comprising a beam expanding system and a beam homogenizing module arranged sequentially along the transmission direction of the initial linearly polarized laser beam.

[0112] Specifically, such as Figure 13 The image shows a complete schematic diagram of the laser annealing apparatus. Figure 13 In the process, the beam shaping system includes a beam expander 1211 and a beam homogenizer 1212 arranged sequentially along the transmission direction of the initial linearly polarized laser beam.

[0113] The beam expanding system 1211 is used to expand the initial linearly polarized laser beam, and the beam homogenizing module 1212 is used to make the energy distribution of the expanded initial linearly polarized laser beam more uniform. It may include at least one of the following components: a homogenizing plate (homogenizing mirror), a beam shaper, a microlens array, a random microlens array, and a compound eye lens array.

[0114] The initial linearly polarized laser beam generated by laser 121 passes sequentially through beam expanding system 1211, homogenizing module 1212, and optical modulation component 21 in beam shaping system 122 before being incident on polarization beam splitter element 22. After being transmitted through polarization beam splitter element 22 to first polarization state conversion element 23, it is focused onto target object 124 by focusing lens group 26, where an annealing process is performed on target object 124. Focusing lens group 26 can be a Fourier lens group, used to focus the output of homogenizing module 1212 onto the surface of target object 124.

[0115] The reflected light from the target object 124 passes sequentially through the focusing lens group 26 and the first polarization state conversion element 23 before being incident on the polarization beam splitter element 22. The reflected light is then reflected by the polarization beam splitter element 22 to the reflected light receiver 24, thus preventing the reflected light from entering the laser 121 and damaging it.

[0116] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An anti-reflective light system, characterized in that, include: Optical modulation assembly, polarization beam splitter, first polarization state conversion element, and reflected light receiver; The optical modulation component is used to receive a target linearly polarized laser beam, convert the target linearly polarized laser beam into a first P-beam, and incident the first P-beam onto the polarization beam splitter. The first P-beam is transmitted through the polarization beam splitter to the first polarization state conversion element. The first polarization state conversion element is used to convert the first P-beam into a first circularly polarized light, and the first circularly polarized light is used to incident on the target object. The first polarization state conversion element is also used to receive the second circularly polarized light reflected by the target object, and convert the second circularly polarized light into a first S-beam before it is incident on the polarization beam splitter element. The first S-beam is reflected by the polarization beam splitter element to the reflected light receiver.

2. The anti-reflective light system of claim 1, wherein, The optical modulation component includes a first optical modulator; The first optical modulator is used to convert the target linearly polarized laser beam into the first P-light.

3. The anti-reflective light system of claim 2, wherein, The first optical modulator includes a first substrate layer, a first protective layer, a first liquid crystal layer, a second protective layer, and a second substrate layer arranged sequentially along the transmission direction of the target linearly polarized laser beam; The long axis of the first liquid crystal layer is in the same direction as the polarization direction of the S-light.

4. The anti-reflective light system of claim 1, wherein, The optical modulation assembly includes a second optical modulator and a second polarization state conversion element; The second optical modulator is used to convert the target linearly polarized laser beam into a second S-beam; The second polarization state conversion element is used to convert the second S-light into the first P-light.

5. The anti-reflective light system of claim 4, wherein, The second optical modulator includes a first substrate layer, a first protective layer, a second liquid crystal layer, a second protective layer, and a second substrate layer arranged sequentially along the transmission direction of the target linearly polarized laser beam; The long axis of the second liquid crystal layer is in the same direction as the polarization direction of the P-light.

6. The anti-reflective light system according to claim 3 or 5, wherein Both the first and second protective layers are made of polyimide; and / or, Both the first base layer and the second base layer are made of fused silica material.

7. A laser annealing apparatus characterized by comprising: include: Laser, beam shaping system, and anti-reflective light system as described in any one of claims 1-6; The laser is used to generate an initial linearly polarized laser beam; The beam shaping system is used to shape the initial linearly polarized laser beam to obtain the target linearly polarized laser beam, and then incident the target linearly polarized laser beam onto the anti-reflection light system to perform an annealing process on the target object.

8. The laser anneal apparatus of claim 7, wherein, The beam shaping system includes a beam expander system and a beam homogenizing module arranged sequentially along the transmission direction of the initial linearly polarized laser beam.

9. The laser anneal apparatus of claim 7, wherein, Also includes: A focusing lens assembly is disposed between the anti-reflective light system and the target object.

10. The laser anneal apparatus of claim 7, wherein, The initial linearly polarized laser beam includes P-beams and S-beams.

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