A MOSFET with integrated driving circuit
By designing an integrated drive circuit, a resistor string is formed by combining a resistor MOS and a control signal MOS, which solves the problem of increased losses caused by the high internal resistance of the MOS transistor at low drive voltages and achieves the effect of reducing losses at high drive voltages.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- WUXI XIANGRUI MICROELECTRONICS TECH CO LTD
- Filing Date
- 2025-07-25
- Publication Date
- 2026-07-03
AI Technical Summary
Existing MOSFETs have a high drain-sink internal resistance at low drive voltages, which leads to increased losses. At the same time, external drive circuits increase PCB board space and cost.
The MOSFETs with integrated drive circuits are used. By combining the resistor MOSFETs and the control signal MOSFETs, a resistor string is formed to reduce the drain-sink internal resistance of the main MOSFET. The drive is achieved at high drive voltage by using multiple MOSFETs and resistors in series.
Without increasing PCB board space and cost, the drain-sink internal resistance of the MOSFET is effectively reduced, thus lowering losses.
Smart Images
Figure CN224459768U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to a design improvement of a MOSFET, and in particular to a MOSFET with an integrated driving circuit. Background Technology
[0002] In many applications of MOSFETs (microcontrollers, low-voltage high-current), the drive voltage of a MOSFET is only 5V. The internal resistance characteristic of a MOSFET is that the higher the drive voltage at the gate (G), the lower the internal resistance between the drain (D) and source (S). For example, the internal resistance at a 10V drive voltage is 2.2mΩ, while the internal resistance at a 5V drive voltage reaches 3.3mΩ. The internal resistance at 5V is 0.5 times higher than that at 10V. The higher the internal resistance of a MOSFET, the greater the power loss. However, if an external drive circuit is used, it will increase the space on the PCB board that houses the MOSFET and also increase the cost.
[0003] In summary, how to improve existing MOSFETs by adding a driver to reduce the drain-sink internal resistance and thus reduce losses is a technical problem that needs to be solved. Utility Model Content
[0004] To address the problems mentioned in the background art, this utility model provides a MOSFET with an integrated driving circuit. The main MOSFET is driven by a driving circuit formed by a resistor MOSFET and a control signal MOSFET, which effectively reduces the internal resistance of the main MOSFET's drain-sink junction, thereby reducing losses.
[0005] The technical solution of this utility model is as follows: A MOSFET with an integrated driving circuit includes a main MOSFET Q1, and also includes control signal MOSFETs Q2, Q3, Q4, and Q5. The drain of control signal MOSFET Q2 is connected to the external driving voltage V. CC Electrically connected, the gate of control signal MOS Q2 is electrically connected to the drain of control signal MOS Q4, and simultaneously connected to the drive voltage V through several resistors connected in series in MOS1. CC Electrically connected, the sources of control signal MOS Q3, control signal MOS Q4 and control signal MOS Q5 are all electrically connected to the source of main MOS transistor Q1, the gate of control signal MOS Q4 is connected to the drain of control signal MOS Q5, and simultaneously connected to the drive voltage VCC through several resistors MOS2 connected in series, and the gate of control signal MOS Q5 is electrically connected to the drive voltage signal VCC.
[0006] As an improvement, the gates of all resistors MOS1 are electrically connected to the driving voltage VCC, and the drains of resistors MOS1 are sequentially connected to the sources of adjacent resistors MOS1. The plurality of resistors MOS1 connected in series in sequence form a resistor string. The positive terminal of the resistor string is electrically connected to the driving voltage VCC, and the negative terminal of the resistor string is electrically connected to the gates of control signal MOS Q3 and control signal MOS Q4, respectively.
[0007] As an improvement, the gates of all resistors MOS2 are electrically connected to the driving voltage VCC, and the drains of resistors MOS2 are sequentially connected to the sources of adjacent resistors MOS2. The plurality of resistors MOS2 connected in series in sequence form a resistor string. The positive terminal of the resistor string is electrically connected to the driving voltage VCC, and the negative terminal of the resistor string is electrically connected to the gate of the control signal MOS Q2.
[0008] In summary, the present invention has the following beneficial effects: the entire component of the integrated drive circuit of the present invention is composed of MOS transistors, without the need for external resistors or other components. By using a resistor string composed of several MOS resistors to control the signal MOS, the internal resistance between the drain and source of the main MOS transistor is reduced under a large drive voltage, thereby effectively reducing losses. Attached Figure Description
[0009] Figure 1 This is a schematic diagram of the structure of a MOSFET in the prior art;
[0010] Figure 2 This is a schematic diagram of the structure of this utility model. Detailed Implementation
[0011] The technical solutions of this utility model will be clearly and completely described below with reference to the embodiments of this utility model. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those of ordinary skill in the art without making inventive efforts are within the protection scope of this utility model.
[0012] like Figure 1As shown in the diagram, the box contains the internal schematic of the MOSFET integrated driving circuit. Q1 is the main MOSFET, and Q2, Q3, Q4, and Q5 are control signal MOSFETs. It also includes resistors MOSFET1 and MOSFET2. Resistor MOSFET1 includes resistors MOSFETs Q6, Q7, and Q8. The gates of resistors MOSFETs Q6, Q7, and Q8 are all electrically connected to the driving voltage VCC. The drains of resistors MOSFETs Q6, Q7, and Q8 are connected to the sources of the adjacent resistor MOSFET1. Resistors MOSFETs Q6, Q7, and Q8 are connected in series to form a resistor string. The positive terminal of the resistor string is electrically connected to the driving voltage VCC, and the negative terminal of the resistor string is electrically connected to the gates of control signal MOSFETs Q3 and Q4, respectively.
[0013] The resistor MOS2 includes resistors MOS Q9, MOS Q10, and MOS Q11, etc. The drains of resistors MOS Q9, MOS Q10, and MOS Q11 are connected in sequence. The resistors MOS2 connected in series form a resistor string. The positive terminal of the resistor string is electrically connected to the driving voltage VCC, and the negative terminal of the resistor string is electrically connected to the gate of the control signal MOS Q2.
[0014] When the voltage at the VCC terminal is applied to the gate of the main MOSFET, the main MOSFET turns on. Utilizing the internal resistance of the main MOSFET itself, the desired resistance value is achieved through resistors MOS1 and MOS2 formed by multiple MOSFETs connected in series.
[0015] For example, if the VCC terminal provides a 10V power supply (or higher), when the voltage at the gate of the main MOSFET is 5V high, the control signal MOSFET Q5 is turned on, the gate voltage of the control signal MOSFET Q4 is pulled low, and the control signal MOSFET Q4 is turned off. The voltage at the VCC terminal is applied to the gate of the control signal MOSFET Q2 through resistors MOSFET Q9, MOSFET Q10, and MOSFET Q11, and the control signal MOSFET Q2 is turned on. The 10V (or higher) voltage at the VCC terminal is applied to the gate of the main MOSFET Q1 through the control signal MOSFET Q2, and the main MOSFET Q1 is turned on.
[0016] When the gate voltage of the driving MOSFET Q1 is 0V (low level), the control signal MOSFET Q5 is cut off. The 10V (or higher) voltage from VCC is applied to the gate of the control signal MOSFET Q4 through resistor MOS1 (composed of resistors MOS6, MOS7, and MOS8), turning on the control signal MOSFET Q4. The gate of the control signal MOSFET Q2 is low, turning off the control signal MOSFET Q2. At the same time, the 10V (or higher) voltage from VCC is applied to the gate of the control signal MOSFET Q3 through resistor MOS1 (composed of resistors MOS6, MOS7, and MOS8), turning on the control signal MOSFET Q3. This pulls down the gate of the main MOSFET Q1, turning off the main MOSFET Q1.
[0017] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.
Claims
1. An integrated drive circuit MOS transistor comprising a main MOS transistor Ql, characterized in that, It also includes control signals MOS Q2, MOS Q3, MOS Q4, and MOS Q5, with the drain of control signal MOS Q2 connected to the external drive voltage V. CC Electrically connected, the gate of control signal MOS Q2 is electrically connected to the drain of control signal MOS Q4, and is also electrically connected to the drive voltage VCC through several resistors MOS1 connected in series. The sources of control signals MOS Q3, MOS Q4, and MOS Q5 are all electrically connected to the source of the main MOS transistor Q1. The gate of control signal MOS Q4 is connected to the drain of control signal MOS Q5, and is also electrically connected to the drive voltage VCC through several resistors MOS2 connected in series. The gate of control signal MOS Q5 is electrically connected to the drive voltage signal VCC.
2. The integrated driver circuit MOS transistor of claim 1, wherein, The gates of all resistors MOS1 are electrically connected to the driving voltage VCC. The drains of resistors MOS1 are connected to the sources of adjacent resistors MOS1 in sequence. The several resistors MOS1 connected in series in sequence form a resistor string. The positive terminal of the resistor string is electrically connected to the driving voltage VCC, and the negative terminal of the resistor string is electrically connected to the gates of control signal MOS Q3 and control signal MOS Q4, respectively.
3. The integrated drive circuit MOS transistor of claim 1, wherein, The gates of all resistors MOS2 are electrically connected to the driving voltage VCC. The drains of resistors MOS2 are connected to the sources of adjacent resistors MOS2 in sequence. The several resistors MOS2 connected in series in sequence form a resistor string. The positive terminal of the resistor string is electrically connected to the driving voltage VCC, and the negative terminal of the resistor string is electrically connected to the gate of the control signal MOSQ2.