Heating device

By dividing the heating plate into fan-shaped areas and setting corresponding heating mechanisms, and adjusting the power ratio, the problem of inflexible temperature adjustment of the heating plate was solved, and precise temperature control of abnormal areas of the wafer was achieved.

CN224467912UActive Publication Date: 2026-07-07GTA SEMICON CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
GTA SEMICON CO LTD
Filing Date
2025-04-21
Publication Date
2026-07-07

AI Technical Summary

Technical Problem

Existing heating plates are not flexible enough in adjusting the temperature of different areas of the wafer, and cannot achieve temperature adjustment only for abnormal areas.

Method used

The heating plate is divided into an even number of sector areas, and an even number of heating mechanisms are set up. Each heating mechanism is distributed in a sector area. By adjusting the power ratio of the heating mechanisms in every two sector areas, the temperature of a part of the heating plate can be adjusted.

Benefits of technology

This improves the flexibility of temperature regulation in the heating device, enabling more precise temperature control in abnormal areas of the wafer.

✦ Generated by Eureka AI based on patent content.

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Abstract

The application relates to a heating device. The heating device comprises a heating disc, which is divided into at least four fan-shaped areas; and at least four heating mechanisms, each of which is distributed in a fan-shaped area, and the number of the heating mechanisms is equal to that of the fan-shaped areas and is an even number. The temperature of part of the heating disc can be adjusted, so that the flexibility of temperature adjustment of the heating device is improved.
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Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to heating devices. Background Technology

[0002] With the development of semiconductor technology, in metal-organic chemical vapor deposition (MOCVD), process gases are introduced into the process chamber via carrier gases and deposited on the wafer surface to form a thin film. During this process, the wafer is placed above a heating plate, which heats the wafer, causing the process gases to decompose thermally on the wafer surface to form the thin film.

[0003] In related technologies, the heating plate consists of an inner ring and an outer ring of resistance wires to provide heating.

[0004] However, in actual production, since the temperature is adjusted by the power ratio of the inner and outer rings, when the temperature in some areas of the wafer is abnormal, the temperature of each area of ​​the heating plate changes simultaneously by adjusting the power ratio of the inner and outer rings. It is not possible to adjust the temperature only for the abnormal area of ​​the wafer. Therefore, the temperature adjustment of each area in the heating plate is not flexible enough. Utility Model Content

[0005] Therefore, it is necessary to provide a heating device to address the problem of insufficient flexibility in temperature adjustment in different areas of the heating plate.

[0006] A heating device, the device comprising:

[0007] A heating plate, the heating plate being divided into at least four sector-shaped areas;

[0008] At least four heating mechanisms are provided, each of which is distributed in a sector-shaped region. The number of heating mechanisms is the same as the number of sector-shaped regions, and the number is an even number.

[0009] In one embodiment, two adjacent heating mechanisms among the at least four heating mechanisms form a group of heating mechanisms, and each heating mechanism in any two groups of heating mechanisms is different; the power ratio of each group of heating mechanisms is within a preset range when energized.

[0010] In one embodiment, the preset range includes 0.75 to 1.25.

[0011] In one embodiment, all the said sector regions are the same size.

[0012] In one embodiment, each of the sector regions has two connecting mechanisms on one side; each of the heating mechanisms includes two endpoints; each endpoint is connected to one of the connecting mechanisms.

[0013] In one embodiment, the connecting mechanisms are evenly arranged with the center of the heating plate as the center.

[0014] In one embodiment, the heating mechanism is a resistance wire; the connection mechanism is a terminal; and one end of the resistance wire is connected to one of the terminal blocks.

[0015] In one embodiment, the coils of each resistance wire are evenly arranged in the corresponding sector area.

[0016] In one embodiment, each of the resistance wires is of the same length.

[0017] In one embodiment, the device further includes a fixing part, one end of which is connected to the heating plate.

[0018] The above-mentioned heating device, by setting the heating plate into an even number of sector areas and having an even number of heating mechanisms, with each heating mechanism corresponding to one sector area, can adjust the temperature of a portion of the heating plate by adjusting the power ratio of the heating mechanisms in every two sector areas, thereby improving the flexibility of temperature adjustment of the heating device. Attached Figure Description

[0019] Figure 1 This is an application environment diagram of a heating device provided in some embodiments;

[0020] Figure 2 This is a top view of the heating device provided in some embodiments;

[0021] Figure 3 This is a schematic diagram illustrating the division of the heating area of ​​the heating device provided in some embodiments;

[0022] Figure 4 This refers to the wafer temperature anomaly region provided in some embodiments.

[0023] Explanation of reference numerals in the attached figures:

[0024] 1-Process chamber, H-Heating device, W-Wafer, 2-Process gas inlet pipeline, 3-Gas distributor, 4-RF signal generator, 5-Vacuum pump exhaust port, 6-Fixing part;

[0025] 7-Heating plate, 8-Fan-shaped area, 9-Heating mechanism, 10-Connecting mechanism. Detailed Implementation

[0026] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0027] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0028] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0029] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0030] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0031] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0032] See Figure 1 , Figure 1 The diagram illustrates the application environment of a heating device according to an embodiment of this application. The heating device provided in this embodiment is located inside a process chamber 1. The heating device H is used to support and heat the wafer W. The application environment also includes a process gas inlet pipe 2 and a gas distributor 3. The gas distributor 3 is connected to the process gas inlet pipe 2 and is used to uniformly distribute the process gas within the process chamber 1. The flow direction of the process gas can be as follows: Figure 1 As indicated by the arrow in the diagram. It should be noted that process gas can be introduced into process chamber 1 via carrier gas.

[0033] For example, the carrier gas includes an inert gas; such as helium (He), neon (Ne), argon (Ar), krypton (Kr), or xenon (Xe).

[0034] For example, process gases include, but are not limited to, tetramethylammonium titanium (TDMAT) gas.

[0035] In some embodiments, please continue reading Figure 1 The application environment also includes a radio frequency signal generator 4; the radio frequency signal generator 4 is connected to the process chamber 1 and is used to emit radio frequency signals.

[0036] In some embodiments, please continue reading Figure 1 The application environment also includes the vacuum pump exhaust port 5; the vacuum pump exhaust port 5 is connected to the process chamber 1 and is used to discharge the gas in the process chamber 1.

[0037] In some embodiments, please continue reading Figure 1 The heating device also includes a fixing part 6, which connects the heating device H to the side away from the wafer, places the heating device H in the process chamber 1, and supports the wafer W on the side of the heating device H close to the wafer.

[0038] Combination Figure 2 As shown, Figure 2 A top view of a heating device according to an embodiment of this application is shown. In some embodiments, the heating device is used to hold and heat a wafer. The heating device includes a heating plate 7, which is divided into at least four sector regions 8; at least four heating mechanisms 9, each heating mechanism 9 being distributed in a sector region 8. The number of heating mechanisms 9 is the same as the number of sector regions 8, and the number is even.

[0039] In some examples, the shape of the heating plate 7 includes a centrally symmetrical figure, such as a circle, an ellipse, or a regular polygon.

[0040] For example, please refer to Figure 2 The heating plate 7 can be circular, for example.

[0041] For example, the radius of the heating plate 7 can range from 100mm to 200mm; the radius of the heating plate 7 can be, for example, 100mm, 120mm, 140mm, 150mm, 160mm, 165mm, 170mm, 180mm or 200mm.

[0042] For example, the thickness of the heating plate 7 can range from 40mm to 100mm; the thickness of the heating plate 7 can be, for example, 40mm, 50mm, 58mm, 60mm, 70mm, 80mm, 90mm or 100mm.

[0043] For example, the material of the heating plate 7 includes, but is not limited to, steel; the material of the heating plate 7 may be, for example, carbon structural steel.

[0044] In some examples, the heating plate 7 is divided into at least four sector areas 8, which can be 4 sector areas, 6 sector areas, 10 sector areas, 12 sector areas, 14 sector areas or 16 sector areas, or other even number of sector areas.

[0045] For example, please continue reading Figure 2 The heating plate 7 is divided into four sector areas 8.

[0046] In some examples, the heating mechanism 9 includes at least four, and can be 4, 6, 10, 12, 14, or 16 heating mechanisms 9, or other even numbers of heating mechanisms 9.

[0047] For example, please continue reading Figure 2 The heating device has four heating mechanisms (9).

[0048] In some examples, the heating mechanism 9 includes a resistance wire, which may also be wrapped with an insulating layer. The insulating layer includes, but is not limited to, a silicone insulating layer, a rubber insulating layer, and a polyvinyl chloride (PVC) insulating layer.

[0049] For example, the cross-sectional area of ​​the resistance wire can range from 10 mm². 2 ~20mm 2 The cross-sectional area of ​​the resistance wire can be, for example, 10 mm². 2 12mm 2 14mm 2 15mm 2 16mm 2 18mm 2 Or 20mm 2 wait.

[0050] For example, the cross-sectional diameter of the resistance wire can range from 5mm to 10mm; the cross-sectional diameter of the resistance wire can be, for example, 5mm, 6mm, 7mm, 7.5mm, 8mm, 9mm or 10mm, etc.

[0051] In some examples, the number of heating elements 9 is the same as the number of sector regions 8, such as... Figure 2 As shown, the number of heating mechanisms 9 and the number of sector areas 8 are both 4, but they can also be other even numbers.

[0052] For example, each heating mechanism 9 is distributed in a corresponding sector-shaped region 8, including: the sector-shaped region 8 has a groove, and each heating mechanism 9 is correspondingly embedded in the groove of the sector-shaped region 8. Alternatively, the heating mechanism 9 can be laid flat on the end face of the sector-shaped region 8. By energizing the heating mechanism, electrical energy is converted into heat energy, thereby achieving the heating of the heating plate.

[0053] In this embodiment, by setting the heating plate to an even number of sector areas and having an even number of heating mechanisms, with each heating mechanism corresponding to one sector area, the temperature of a portion of the heating plate can be adjusted by adjusting the power ratio of the heating mechanisms in every two sector areas, thereby improving the flexibility of temperature adjustment of the heating device.

[0054] In some embodiments, adjacent heating mechanisms 9 among at least four heating mechanisms 9 form a group of heating mechanisms, and each heating mechanism 9 in any two groups of heating mechanisms is different; the power ratio of each group of heating mechanisms 9 is within a preset range when energized.

[0055] In some embodiments, the heating plate 7 has at least four heating areas, and the number of heating areas can be, for example, 4, 6, 8, 10 or 12, or other even numbers.

[0056] Combination Figure 3 As shown, Figure 3 A top view of a heating device according to an embodiment of this application is shown. The heating plate 7 has four heating zones, namely Ra, Rb, Rc, and Rd.

[0057] For example, the heating area may be fan-shaped; the heating area may be, for example, a right-angled fan or an acute-angled fan, and the area of ​​each heating area is equal.

[0058] For example, a set of heating mechanisms includes two heating mechanisms. Specifically, the heating mechanism in heating region Ra can be grouped with the heating mechanism in heating region Rb, and correspondingly, the heating mechanism in heating region Rc can be grouped with the heating mechanism in heating region Rd. Alternatively, the heating mechanism in heating region Ra can be grouped with the heating mechanism in heating region Rc, and correspondingly, the heating mechanism in heating region Rb can be grouped with the heating mechanism in heating region Rd.

[0059] For example, the heating plate 7 has six heating zones, numbered Ra, Rb, Rc, Rd, Re, and Rf in a clockwise direction from top to bottom. Each heating mechanism group includes two heating mechanisms. Specifically, the heating mechanism in heating zone Ra can be grouped with the heating mechanism in heating zone Rb; the heating mechanism in heating zone Rc can be grouped with the heating mechanism in heating zone Rd; and the heating mechanism in heating zone Re can be grouped with the heating mechanism in heating zone Rf. Alternatively, the heating mechanism in heating zone Ra can be grouped with the heating mechanism in heating zone Rf; the heating mechanism in heating zone Rb can be grouped with the heating mechanism in heating zone Rc; and the heating mechanism in heating zone Re can be grouped with the heating mechanism in heating zone Rd.

[0060] In some embodiments, the power ratio of each group of heating mechanisms is within a preset range when energized. The preset range includes 0.75 to 1.25, and can be any value from 0.75 to 1.25. This value can be accurate to one decimal place, two decimal places, or three decimal places. Examples include 0.8, 0.9, 1, 1.1, or 1.2, and also 0.75, 0.85, 0.95, 1.15, or 1.25. The heating mechanism in heating zone Ra can be grouped with the heating mechanism in heating zone Rb, and correspondingly, the heating mechanism in heating zone Rc can be grouped with the heating mechanism in heating zone Rd. The corresponding power ratios are (power of the heating mechanism in heating zone Ra / power of the heating mechanism in heating zone Rb) and (power of the heating mechanism in heating zone Rc / power of the heating mechanism in heating zone Rd), respectively. Figure 4 As shown, region R1 is the wafer temperature anomaly area. If the wafer temperature in this region is higher than the wafer temperature in other regions, the temperature in this region needs to be lowered; if the wafer temperature in this region is lower than the wafer temperature in other regions, the temperature in this region needs to be raised. The temperature can be adjusted by regulating the power ratio of each heating element. Heating plate 7 is shown... Figure 3 As shown, the area is divided into four regions. The heating mechanism in heating region Ra can be grouped with the heating mechanism in heating region Rb, and correspondingly, the heating mechanism in heating region Rc can be grouped with the heating mechanism in heating region Rd. In this case, by adjusting the power of the heating mechanisms in heating regions Rc and Rd to suit the abnormal wafer temperature areas and keeping the power within a preset range, the local temperature of the heating plate can be adjusted, thus achieving local temperature regulation of the heating plate.

[0061] In some examples, each sector 8 is the same size. The area of ​​each sector 8 is determined by its radius and angular radius. If the heating plate 7 is divided into 4 sectors 8, the angular radius of each sector 8 is 90 degrees; if the heating plate 7 is divided into 6 sectors 8, the angular radius of each sector 8 is 60 degrees; if the heating plate 7 is divided into 8 sectors 8, the angular radius of each sector 8 is 45 degrees; if the heating plate 7 is divided into 10 sectors 8, the angular radius of each sector 8 is 36 degrees; if the heating plate 7 is divided into 12 sectors 8, the angular radius of each sector 8 is 30 degrees; if the heating plate 7 is divided into 16 sectors 8, the angular radius of each sector 8 is 22.5 degrees; and so on.

[0062] In this embodiment, by ensuring that each sector is the same size, the heating mechanism is arranged in sector areas of the same size, thereby achieving the same heating area and enabling more uniform heating.

[0063] In some embodiments, each sector region 8 has two connecting mechanisms 10 on one side; each heating mechanism 9 includes two endpoints; each endpoint is connected to a connecting mechanism 10.

[0064] For example, such as Figure 2 As shown, two connecting mechanisms 10 are provided on one side near the center of the heating plate 7, and the connecting mechanisms 10 are evenly arranged with the center of the heating plate 7 as the center. Among them, the connecting mechanism 10 includes a terminal block.

[0065] For example, two connecting mechanisms 10 may also be provided on the side away from the center of the heating plate 7, wherein the connecting mechanism 10 includes a terminal. For example, the terminal may be located near the arc of the corresponding sector area 8 of the heating plate 7.

[0066] It should be noted that one of the terminals is the port where current flows in, and the other terminal is the port where current flows out.

[0067] In this embodiment, the arrangement of the connecting mechanism 10 can achieve the effect of uniform heating.

[0068] In some embodiments, each sector region 8 has two connecting mechanisms 10 on one side; each heating mechanism 9 includes two endpoints; each endpoint is connected to a connecting mechanism 10.

[0069] For example, such as Figure 2 As shown, two connecting mechanisms 10 are provided on one side near the center of the heating plate 7, and the connecting mechanisms 10 are evenly arranged around the center of the heating plate 7. Each heating mechanism 9 includes two endpoints; the first endpoint is connected to a connecting mechanism 10, which can be either a port for current inflow or a port for current outflow. If the first endpoint is connected to the port for current inflow, then the second endpoint is connected to the port for current outflow. If the first endpoint is connected to the port for current outflow, then the second endpoint is connected to the port for current inflow.

[0070] For example, such as Figure 2 As shown, two terminals are located on the side near the center of the heating plate 7. The heating mechanism 9 is a resistance wire with two ends. If the first end of the resistance wire is connected to the terminal for current inflow, then the other end of the resistance wire is connected to the terminal for current outflow. Conversely, if the first end of the resistance wire is connected to the terminal for current outflow, then the other end of the resistance wire is connected to the terminal for current inflow.

[0071] For example, the ends of the resistance wire are wound around the terminals, and excess resistance wire can be wound around the terminals according to the arrangement of the resistance wire coils.

[0072] In some embodiments, the coils of each resistance wire are uniformly arranged in a corresponding sector region 8. The arrangement shape of the coils of each resistance wire includes triangles, trapezoids, sectors, and / or fan rings. The spacing between the coils of each resistance wire is the same. The material of the resistance wire can be a nickel-chromium alloy or an iron-chromium-aluminum alloy.

[0073] In this embodiment, more uniform heating can be achieved by setting the same arrangement shape of the resistance wire coils.

[0074] In some embodiments, each resistance wire is of the same length. For example... Figure 2 As shown, the resistance wires arranged in the four sector regions 8 are all of the same length, and the coils of the resistance wires are arranged in a sector shape. The fact that the resistance wires are arranged in the same shape as the sector regions 8 ensures a more uniform heating temperature within the sector regions 8 during heating.

[0075] In this embodiment, by setting the resistance wires to the same length, more uniform heating can be achieved.

[0076] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0077] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A heating device, characterized in that, The device includes: A heating plate, the heating plate being divided into at least four sector-shaped areas; At least four heating mechanisms are provided, each of which is distributed in a sector-shaped area. The number of heating mechanisms is the same as the number of sector-shaped areas, and the number is even. Two adjacent heating mechanisms in the at least four heating mechanisms form a group of heating mechanisms, and each heating mechanism in any two groups of heating mechanisms is different. When energized, the power ratio of each group of heating mechanisms is within a preset range.

2. The apparatus according to claim 1, characterized in that, The preset range includes 0.75 to 1.

25.

3. The apparatus according to claim 1, characterized in that, All the described sector regions are the same size.

4. The apparatus according to claim 1, characterized in that, Each of the fan-shaped regions has two connecting mechanisms on one side; each of the heating mechanisms includes two endpoints; each endpoint is connected to one of the connecting mechanisms.

5. The apparatus according to claim 4, characterized in that, Each of the connecting mechanisms is evenly arranged with the center of the heating plate as the center.

6. The apparatus according to claim 4, characterized in that, The heating mechanism includes a resistance wire; the connection mechanism includes a terminal; one end of the resistance wire is connected to one of the terminal blocks.

7. The apparatus according to claim 6, characterized in that, The coils of each resistance wire are evenly arranged in the corresponding sector area.

8. The apparatus according to claim 6, characterized in that, Each of the resistance wires is the same length.

9. The apparatus according to claim 1, characterized in that, The device also includes a fixing part, one end of which is connected to the heating plate.