High purity stainless steel tube for semiconductor

Abstract

The utility model relates to stainless steel pipe technical field especially relates to a high purity semiconductor with stainless steel pipe. Its technical scheme includes first stainless steel pipe, second stainless steel pipe and connecting pipe, first stainless steel pipe and second stainless steel pipe outer surface near the end position department all weld with the sleeve pipe, and the both ends of connecting pipe are located inside two sleeve pipes respectively, the welding ring is welded in the middle position department of connecting pipe outer surface, and the welding ring is located between two sleeve pipes, welding ring and sleeve pipe between through welding fixed, and the sleeve pipe and welding ring junction form the weld. The utility model can effectively avoid the butt welding of high purity semiconductor with stainless steel pipe end, thereby effectively avoid the mechanical property and anticorrosive layer of pipe material of destruction, prolong the service life of pipe material.

Description

Technical Field

[0001] This utility model relates to the field of stainless steel tube technology, specifically to a high-purity stainless steel tube for semiconductors. Background Technology

[0002] High-purity stainless steel tubing for semiconductors is a core component in semiconductor manufacturing, ensuring the cleanliness and stability of process fluids (such as ultra-high-purity gases, chemicals, and ultrapure water). It uses specific grades of stainless steel (such as 316L and 316LN, low-carbon high-chromium-nickel alloys) as the base material and is manufactured through special processes such as precision cold rolling, seamless forming, and internal wall electrolytic polishing (EP) or mechanical polishing (MP). Typically, the tubing requires a purity of 99.99% or higher, an internal wall roughness (Ra) as low as 0.1-0.4 μm, and strict control of sulfur, phosphorus, and other pollutants is necessary. The content of impurity elements such as carbon (some indicators need to be below 10ppm) is controlled to prevent impurities from precipitating and contaminating semiconductor wafers. These tubes have excellent corrosion resistance (resisting the corrosion of commonly used semiconductor chemicals such as hydrofluoric acid and ammonia), extremely low gas permeability and metal ion dissolution, and must meet strict dimensional accuracy (such as outer diameter tolerance ±0.1mm and wall thickness uniformity deviation <5%). They are widely used in key processes such as photolithography, etching, and deposition (CVD / PVD) in semiconductor chip manufacturing and are an important basic material for ensuring the yield and performance of semiconductor devices.

[0003] In practical applications, high-purity stainless steel tubes for semiconductors require welding to connect the pipes to ensure stringent airtightness requirements. This is a crucial step in maintaining the clean transmission of fluids in semiconductor manufacturing processes. Existing welding methods typically involve directly butt-jointing the ends of two stainless steel tubes and welding at the joint. However, the high temperatures during welding can damage the original mechanical properties and anti-corrosion layer of the tubes, leading to easy breakage and corrosion at the weld joint, thus reducing the service life of the tubes. To address this, we propose a high-purity stainless steel tube for semiconductors. Utility Model Content

[0004] The purpose of this invention is to provide a high-purity stainless steel tube for semiconductors, which effectively avoids butt welding at the ends of the tube, thereby preventing damage to the mechanical properties and anti-corrosion layer of the tube and extending its service life. This invention solves the problem that the existing welding method for high-purity stainless steel tubes for semiconductors usually involves directly butt-jointing the ends of two stainless steel tubes and welding at the joint. However, the high temperature during the welding process can damage the original mechanical properties and anti-corrosion layer of the tube, leading to easy breakage and corrosion at the weld joint, thus reducing the service life of the tube.

[0005] To achieve the above objectives, the present invention provides the following technical solution: a high-purity stainless steel tube for semiconductors, comprising a first stainless steel tube, a second stainless steel tube, and a connecting tube. Sleeves are welded to the outer surfaces of both the first and second stainless steel tubes near their ends, and the two ends of the connecting tube are located inside the two sleeves respectively. A welding ring is welded to the middle of the outer surface of the connecting tube, and the welding ring is located between the two sleeves. The welding ring and the sleeves are fixed together by welding, and a weld seam is formed at the junction of the sleeves and the welding ring.

[0006] Preferably, the inner diameters of the first stainless steel pipe and the second stainless steel pipe are equal to the inner diameter of the connecting pipe, and the ends of the first stainless steel pipe and the second stainless steel pipe are in contact with the two ends of the connecting pipe, respectively.

[0007] Preferably, the outer diameters of the first stainless steel pipe and the second stainless steel pipe are smaller than the inner diameter of the sleeve. The ends of the first stainless steel pipe and the second stainless steel pipe form annular grooves with the inner walls of the two sleeves. Insert rings are provided at both ends of the connecting pipe near the edge, and the two insert rings are respectively located inside the two annular grooves.

[0008] Preferably, a sealing ring is provided inside both of the annular grooves.

[0009] Preferably, a shielding ring is fitted onto the outer surface of the welding ring, and both welds are located inside the shielding ring.

[0010] Preferably, both outer surfaces of the sleeves are provided with annular grooves, and both sides of the inner wall of the shielding ring are provided with annular protrusions, with the two annular protrusions located inside the two annular grooves respectively.

[0011] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0012] 1. This utility model, by setting up a first stainless steel pipe, a second stainless steel pipe, a sleeve, a connecting pipe, a welding ring, and a weld, effectively avoids butt welding at the ends of high-purity semiconductor stainless steel pipes, thereby effectively preventing damage to the mechanical properties and anti-corrosion layer of the pipe and extending the service life of the pipe. When the first stainless steel pipe and the second stainless steel pipe are welded together, both ends of the connecting pipe are inserted into the two sleeves respectively, and the two sleeves are located on both sides of the welding ring. Therefore, during welding, only the welding ring and the sleeve need to be welded together, without butt welding at the ends of the first stainless steel pipe and the second stainless steel pipe. Thus, the ends of the first stainless steel pipe and the second stainless steel pipe will not suffer damage to their mechanical properties and anti-corrosion layer due to the high temperature of welding, and the welding efficiency is also improved.

[0013] 2. By setting a plug ring and a sealing ring, after the connecting pipe, the first stainless steel pipe, and the second stainless steel pipe are welded and fixed, the plug ring is inserted into the annular groove and squeezes the sealing ring, thereby sealing the connection between the connecting pipe, the first stainless steel pipe, and the second stainless steel pipe.

[0014] 3. This utility model, through the shielding ring, the annular groove and the annular protrusion, can fix the shielding ring at the weld and shield the weld, effectively preventing corrosion at the weld. Attached Figure Description

[0015] Figure 1 This is a three-dimensional structural diagram of the present invention;

[0016] Figure 2 This is a partial three-dimensional cross-sectional view of the first and second stainless steel tubes of this utility model.

[0017] Figure 3 This utility model Figure 2 A magnified structural diagram of A in the middle;

[0018] Figure 4 This is a partial three-dimensional cross-sectional view of the shielding ring of this utility model.

[0019] Reference numerals in the attached drawings: 1. First stainless steel pipe; 2. Barrier ring; 3. Second stainless steel pipe; 4. Sleeve; 5. Weld seam; 6. Annular groove; 7. Connecting pipe; 8. Welding ring; 9. Insert ring; 10. Annular groove; 11. Sealing ring; 12. Annular protrusion. Detailed Implementation

[0020] The technical solution of this utility model will be further described below with reference to the accompanying drawings and specific embodiments.

[0021] Example 1

[0022] like Figures 1-3As shown, this utility model proposes a high-purity semiconductor stainless steel tube, including a first stainless steel tube 1, a second stainless steel tube 3, and a connecting tube 7. Sleeves 4 are welded to the outer surfaces of both the first stainless steel tube 1 and the second stainless steel tube 3 near their ends. The ends of the first stainless steel tube 1 and the second stainless steel tube 3 are located inside the two sleeves 4, and both ends of the connecting tube 7 are located inside the two sleeves 4. The first stainless steel tube 1, the second stainless steel tube 3, and the connecting tube 7 are all high-purity semiconductor stainless steel tubes of the same material. The inner diameters of the first stainless steel tube 1 and the second stainless steel tube 3 are equal to the inner diameter of the connecting tube 7, and the ends of the first stainless steel tube 1 and the second stainless steel tube 3 are in contact with both ends of the connecting tube 7. This allows fluids (such as ultra-high purity gases, chemicals, and ultrapure water) in semiconductor production to pass smoothly through the first stainless steel tube 1, the connecting tube 7, and the second stainless steel tube 3.

[0023] The outer diameters of the first stainless steel pipe 1 and the second stainless steel pipe 3 are smaller than the inner diameter of the sleeve 4. The ends of the first stainless steel pipe 1 and the second stainless steel pipe 3 form annular grooves 10 between them and the inner walls of the two sleeves 4. Insert rings 9 are provided at both ends of the connecting pipe 7 near the edge, and the two insert rings 9 are located inside the two annular grooves 10 respectively. The thickness of the insert rings 9 is less than the wall thickness of the connecting pipe 7. Sealing rings 11 are provided inside the two annular grooves 10. The insert rings 9 are inserted into the annular grooves 10 and squeeze the sealing rings 11, which plays a sealing role at the connection between the connecting pipe 7 and the first stainless steel pipe 1 and the second stainless steel pipe 3. A welding ring 8 is welded at the middle position of the outer surface of the connecting pipe 7, and the welding ring 8 is located between the two sleeves 4. The welding ring 8 and the sleeve 4 are fixed by welding, and a weld 5 is formed at the junction of the sleeve 4 and the welding ring 8.

[0024] In this invention, when the first stainless steel pipe 1 and the second stainless steel pipe 3 are welded together, both ends of the connecting pipe 7 are inserted into the two sleeves 4 respectively, and the two sleeves 4 are located on both sides of the welding ring 8. The insertion ring 9 is inserted into the annular groove 10 and the sealing ring 11 is squeezed. Then the welding ring 8 and the sleeves 4 are welded. This eliminates the need for butt welding of the ends of the first stainless steel pipe 1 and the second stainless steel pipe 3. The ends of the first stainless steel pipe 1 and the second stainless steel pipe 3 will not suffer mechanical damage or corrosion layer damage due to the high temperature of welding, thus extending the service life and improving welding efficiency.

[0025] Example 2

[0026] like Figure 1 , Figure 2 and Figure 4As shown, the present invention proposes a high-purity stainless steel tube for semiconductors. Compared with Embodiment 1, this embodiment further includes a shielding ring 2 sleeved on the outer surface of the welding ring 8, and both weld seams 5 are located inside the shielding ring 2. Both outer surfaces of the two sleeves 4 are provided with annular grooves 6, and both sides of the inner wall of the shielding ring 2 are provided with annular protrusions 12, and the two annular protrusions 12 are respectively located inside the two annular grooves 6.

[0027] In this embodiment, the shielding ring 2 is fixed at the weld 5 by the annular groove 6 and the annular protrusion 12, and the shielding ring 2 plays a role in shielding the weld 5, effectively preventing corrosion at the weld 5.

[0028] The above specific embodiments are merely several preferred embodiments of this utility model. Based on the technical solution of this utility model and the relevant teachings of the above embodiments, those skilled in the art can make various alternative improvements and combinations to the above specific embodiments.

Claims

1. A high-purity stainless steel tube for semiconductors, comprising a first stainless steel tube (1), a second stainless steel tube (3), and a connecting tube (7), characterized in that: The first stainless steel pipe (1) and the second stainless steel pipe (3) are both welded with sleeves (4) near their ends on their outer surfaces. The two ends of the connecting pipe (7) are located inside the two sleeves (4) respectively. A welding ring (8) is welded at the middle position of the outer surface of the connecting pipe (7) and the welding ring (8) is located between the two sleeves (4). The welding ring (8) and the sleeve (4) are fixed together by welding, and a weld (5) is formed at the junction of the sleeve (4) and the welding ring (8).

2. The high-purity stainless steel tube for semiconductors according to claim 1, characterized in that: The inner diameters of the first stainless steel pipe (1) and the second stainless steel pipe (3) are equal to the inner diameter of the connecting pipe (7), and the ends of the first stainless steel pipe (1) and the second stainless steel pipe (3) are in contact with the two ends of the connecting pipe (7), respectively.

3. The high-purity stainless steel tube for semiconductors according to claim 1, characterized in that: The outer diameters of the first stainless steel pipe (1) and the second stainless steel pipe (3) are smaller than the inner diameter of the sleeve (4). The ends of the first stainless steel pipe (1) and the second stainless steel pipe (3) form an annular groove (10) between them and the inner walls of the two sleeves (4). The connecting pipe (7) is provided with insert rings (9) at both ends near the edge, and the two insert rings (9) are located inside the two annular grooves (10) respectively.

4. The high-purity stainless steel tube for semiconductors according to claim 3, characterized in that: Both of the annular grooves (10) are provided with sealing rings (11).

5. The high-purity stainless steel tube for semiconductors according to claim 1, characterized in that: The outer surface of the welding ring (8) is fitted with a shielding ring (2), and both welds (5) are located inside the shielding ring (2).

6. A high-purity stainless steel tube for semiconductors according to claim 5, characterized in that: Both sleeves (4) have annular grooves (6) on their outer surfaces, and both sides of the inner wall of the shielding ring (2) have annular protrusions (12), with the two annular protrusions (12) located inside the two annular grooves (6).

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