An amorphous tco-protected metal gate line heterojunction perovskite tandem solar cell
By employing amorphous TCO materials and copper electroplating in heterojunction perovskite tandem solar cells, the contradiction between the light transmittance and water vapor barrier performance of TCO materials under metal grid protection was resolved, thereby improving the stability and conversion efficiency of the device and reducing production costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- GANZHOU CHUANGFA LIGHTING TECH CO LTD
- Filing Date
- 2025-06-26
- Publication Date
- 2026-07-07
AI Technical Summary
Traditional transparent conductive oxide (TCO) materials present a trade-off between light transmittance and moisture barrier performance when used for metal grid protection, resulting in poor long-term device stability. Furthermore, existing metal grid fabrication processes are costly and have high resistivity, affecting fill factor and output current.
Amorphous TCO material is used to protect the metal grid lines. A transparent conductive film layer is prepared by combining linear gas flow plasma sputtering process. The metal grid lines are made by copper electroplating or silver paste printing process. The outer layer of amorphous TCO provides protection, and the inner layer uses a transparent conductive oxide material with low doping and high carrier mobility. The thickness of the transparent conductive film layer is reduced to improve light transmittance and water vapor barrier properties.
It improves the conversion efficiency and reliability of solar cells, reduces production costs, extends service life, enhances the contact and protection capabilities of metal grid lines, and improves current collection capabilities.
Smart Images
Figure CN224473679U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of solar cells, and in particular to a heterojunction perovskite tandem solar cell with amorphous TCO-protected metal grid lines. Background Technology
[0002] In recent years, due to the continuous expansion of silicon wafer, cell, and module production capacity, the cost of photovoltaic power generation has also seen a substantial decline. Therefore, reducing the proportion of the base operating system (BOS) cost in the overall cost structure of photovoltaic power generation systems has become more important. This means that high-efficiency modules will play the most crucial role in reducing system costs, as they can save more BOS costs while providing the same amount of electricity. Among all solar cell technologies, research on silicon-based heterojunction (HJT) solar cells is of great significance because they possess advantages such as high conversion efficiency (25.5%), simple structure, low process temperature (<250℃), fewer process steps, and low temperature coefficient.
[0003] Compared to traditional P-type monocrystalline / polycrystalline solar cells, N-type monocrystalline substrate HJT cells offer advantages such as high efficiency, simple manufacturing process, LID-free (light-induced polarization), PID-free (voltage-dependent polarization), low temperature coefficient, high power generation, low light-induced degradation, low power generation cost, and bifacial illumination capability. These characteristics ensure more reliable photovoltaic modules, lower power plant construction costs, and longer lifespans, making them ideal for distributed photovoltaic applications and one of the mainstream technologies for next-generation high-efficiency cells. Using bifacial heterojunction modules, under white background reflectivity, can output >20% more power. Field tests show that bifacial HJT modules can output an average of 28.9% more power than single-sided HJT modules.
[0004] In the fabrication of HJT solar cells, PECVD plays the most crucial role in determining product performance. The passivation layer deposited on the incident surface is the intrinsic layer (i), upon which a boron-doped (p) layer is stacked. Similarly, an intrinsic passivation layer (i) is deposited on the back side, followed by a phosphorus-doped (n) layer. The thicknesses of the surface passivation layers i / p and i / n are both approximately 15-25 nm. Then, a transparent conductive film (TCO) of approximately 50-200 nm is sputtered onto both sides. Currently, traditional sputtered ITO (indium tin oxide) is mostly used as the TCO, or IWO (indium tungsten oxide) is deposited using RPD (Reactive Plasma Deposition) technology. Then, conductive lines on both sides can be fabricated on the transparent conductive film using low-temperature silver paste screen printing or electroforming copper. This completes the fabrication of an HJT solar cell.
[0005] Perovskite materials are a class of materials with the same crystal structure as calcium titanate (CaTiO3). They were discovered by Gustav Rose in 1839 and later named by the Russian mineralogist LaPerovski. The structural formula of perovskite materials is generally ABX3, where A and B are cations and X is an anion. This unique crystal structure endows them with many distinctive physicochemical properties, such as absorption and optical rotation, and electrocatalysis, leading to significant applications in chemistry and physics. A is an organic cation, typically an aliphatic or aromatic ammonium compound, and B is a divalent metal cation, such as Ge2. + Sn2 + Pb2 + …etc., X is a halide anion (Cl… - ,Br - I - [5]. In 2009, Tsutomu Miyasaka first used organic-inorganic hybrid perovskite materials CH3NH3PbI3 and CH3NH3PbBr3 to replace the dyes in traditional DSSCs as new photosensitizers, and prepared the first truly meaningful perovskite solar cell. After nearly ten years of development, the conversion efficiency of this solar cell has reached more than 23% in the laboratory, and its low cost is its advantage.
[0006] Currently, heterojunction (HJT) solar cells have achieved mass production conversion efficiencies exceeding 25%, making them the mainstream direction for future high-efficiency photovoltaic cells. However, achieving mass production conversion efficiencies exceeding 26% remains a challenging task for the industry. While perovskite solar cells have seen rapid efficiency improvements in recent years, they still have some drawbacks: First, traditional transparent conductive oxide (TCO) materials often present a trade-off between light transmittance and moisture barrier performance when used for metal grid protection. Existing TCO films are typically polycrystalline, and their grain boundaries easily become channels for moisture penetration, leading to oxidation or corrosion of the metal grid and consequently affecting the long-term stability of the device. Second, the fabrication process for metal grids also has limitations. The widely used silver paste printing process is not only costly, but the high resistivity of the silver grids themselves increases series resistance, affecting the fill factor (FF) and output current. Although some studies have attempted to use copper paste or silver-coated copper paste to replace silver paste to reduce costs, the lack of an effective grid protection mechanism and the fact that copper-based materials are more prone to oxidation further reduce the stability and reliability of the device. Utility Model Content
[0007] The purpose of this invention is to provide a heterojunction perovskite tandem solar cell with amorphous TCO-protected metal grid lines, so as to improve the problems existing in the prior art.
[0008] A heterojunction perovskite tandem solar cell with amorphous TCO-protected metal grid lines includes, from top to bottom, a front amorphous transparent conductive film layer, a front metal grid line, a front highly conductive transparent conductive film layer, a buffer layer, an electron transport layer, a perovskite absorber layer, a hole transport layer, an interface conductive layer, a heterojunction cell multilayer film structure layer, a back highly conductive transparent conductive film layer, a back metal grid line, and a back amorphous transparent conductive film layer.
[0009] More preferably, the front amorphous transparent conductive film layer and the back amorphous transparent conductive film layer are amorphous transparent conductive film layers formed by linear gas flow plasma sputtering of indium zinc oxide or indium tin zinc oxide; the thickness is 30-80 nm, and the resistivity is less than 5 × 10⁻⁶. -4 Ωcm, refractive index 1.9-2.1, transmittance greater than 90%.
[0010] More preferably, the front and back metal grid lines are metal grid lines formed by copper electroplating, printing silver paste, printing copper paste, or printing silver-coated copper paste; their thickness is 5-20 μm, width is 10-100 μm, and resistivity is less than 7 × 10⁻⁶. -6 Ωcm.
[0011] More preferably, the front highly conductive transparent conductive film layer and the back highly conductive transparent conductive film layer are transparent conductive film layers formed by linear gas flow plasma sputtering of indium tin oxide, indium tungsten oxide, indium hafnium oxide, indium gallium oxide, indium zirconium oxide, or indium titanium oxide; the thickness is 30-80 nm, and the resistivity is less than 5 × 10⁻⁶. -4 Ωcm, refractive index 1.9-2.1, transmittance greater than 90%.
[0012] More preferably, the buffer layer is a thin film layer formed by linear gas flow plasma sputtering of zinc tin oxide, indium tungsten oxide, indium cerium oxide, titanium oxide, aluminum oxide, or tin oxide, with a thickness of 10-80 nm.
[0013] More preferably, the electron transport layer is a C60 film or a LiF film prepared by linear thermal evaporation, with a thickness of 10-80 nm.
[0014] More preferably, the perovskite absorber layer is made of a mixed cationic perovskite material including Cs, FA and MA and is produced by linear thermal evaporation, with a band gap range of 1.65~1.70 eV and a thickness of 100-1000 nm.
[0015] More preferably, the hole transport layer is a thin film layer formed by vacuum magnetron sputtering of nickel oxide, nickel magnesium oxide, nickel copper oxide, nickel lithium oxide, copper aluminum oxide, or strontium copper oxide, with a thickness of 15~80nm.
[0016] More preferably, the interface conductive layer is formed by vacuum sputtering indium tin oxide, indium tungsten oxide, indium hafnium oxide, indium gallium oxide, indium zirconium oxide, zinc aluminum oxide, zinc gallium oxide, or indium titanium oxide; the thickness is 15-35 nm, and the resistivity is less than 9 × 10⁻⁶. -4 Ωcm, refractive index 1.9-2.1.
[0017] More preferably, the central part of the heterojunction solar cell multilayer film structure is an N-type monocrystalline silicon wafer with a thickness of 50-180 μm. Its top surface has a front intrinsic amorphous silicon layer with a thickness of 5-25 nm, fabricated using physical and chemical vapor deposition (PVD). The top surface of the front intrinsic amorphous silicon layer has a front n-type amorphous silicon layer with a thickness of 5-25 nm, also fabricated using PVD. The bottom surface of the N-type monocrystalline silicon wafer has a back intrinsic amorphous silicon layer with a thickness of 5-25 nm, fabricated using PVD. The bottom surface of the back intrinsic amorphous silicon layer has a back p-type amorphous silicon layer with a thickness of 5-25 nm, also fabricated using PVD.
[0018] Compared with the prior art, this utility model has the following advantages: The front and back of this utility model employ a multilayer film design using amorphous TCO material to protect the metal grid lines, achieving the advantages of reduced contact resistance, improved water vapor barrier properties, and high long-wavelength light transmittance. Linear gas plasma sputtering is used. The transparent conductive film layer is fabricated using LGPS (Liquid Gas Sputtering). The outermost layer uses an amorphous transparent conductive oxide with high water vapor barrier properties, while the inner layer uses a low-doped transparent conductive oxide material with high carrier mobility, which is halved in thickness. A buffer layer with high water vapor barrier properties and high weather resistance is also prepared using a linear gas flow plasma sputtering process to prevent water vapor or water from penetrating through multiple film layers into the perovskite light-absorbing layer, causing material degradation and efficiency reduction. High-conductivity copper electroplating metallization process, silver paste printing process, copper paste printing process, or silver-coated copper paste process are used to fabricate the metal grid lines. The outer amorphous TCO helps to create contact and protection around the metal grid lines, which helps to increase the light intake and the grid lines' ability to collect current, increase current and FF, and significantly increase conversion efficiency. In double-glass encapsulation, both sides can absorb light and generate electricity. Due to the significant increase in efficiency, the overall production cost is reduced. Due to the increased reliability, the service life is extended, which is conducive to market promotion and product popularization. Attached Figure Description
[0019] Figure 1 This is a schematic diagram of the structure of this utility model.
[0020] Reference numerals: 1. Front amorphous transparent conductive film layer; 2. Front metal grid line; 3. Front highly conductive transparent conductive film layer; 4. Buffer layer; 5. Electron transport layer; 6. Perovskite absorber layer; 7. Hole transport layer; 8. Interface conductive layer; 9. Multilayer film structure of heterojunction solar cell; 10. Back highly conductive transparent conductive film layer; 11. Back metal grid line; 12. Back amorphous transparent conductive film layer. Detailed Implementation
[0021] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions in the embodiments of this utility model will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art to which this utility model pertains. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but does not exclude other elements or objects.
[0022] Example 1: As Figure 1 As shown, this utility model provides a heterojunction perovskite tandem solar cell with amorphous TCO-protected metal grid lines, comprising, from top to bottom, a front amorphous transparent conductive film layer 1, a front metal grid line 2, a front highly conductive transparent conductive film layer 3, a buffer layer 4, an electron transport layer 5, a perovskite absorber layer 6, a hole transport layer 7, an interface conductive layer 8, a heterojunction cell multilayer film structure layer 9, a back highly conductive transparent conductive film layer 10, a back metal grid line 11, and a back amorphous transparent conductive film layer 12.
[0023] Furthermore, both the front amorphous transparent conductive film layer 1 and the back amorphous transparent conductive film layer 12 are amorphous transparent conductive film layers formed by linear gas flow plasma sputtering of indium zinc oxide or indium tin zinc oxide; both have a thickness of 30-80 nm and a resistivity of less than 5 × 10⁻⁶. -4 Ωcm, refractive index 1.9-2.1, light transmittance greater than 90%; the transparent conductive protective film layer serves to achieve high light transmittance, collect current, and protect the internal film structure; among them, the amorphous transparent conductive film is scraped off above the metal grid lines by laser grooving, which facilitates the welding of the exposed metal grid lines and solder ribbons during future component packaging.
[0024] Furthermore, both the front metal grid line 2 and the back metal grid line 11 are made of copper electroplating, printed silver paste, printed copper paste, or printed silver-plated copper paste as metal grid lines to form electrodes for conducting current; the thickness of both the front metal grid line 2 and the back metal grid line 11 is 5-20 μm, the width is 10-100 μm, and the resistivity is less than 7 × 10⁻⁶. -6 Ωcm.
[0025] Furthermore, both the front-side highly conductive transparent conductive film layer 3 and the back-side highly conductive transparent conductive film layer 10 are fabricated using linear gas flow plasma sputtering of indium tin oxide, indium tungsten oxide, indium hafnium oxide, indium gallium oxide, indium zirconium oxide, or indium titanium oxide, with a thickness of 30-80 nm and a resistivity of less than 5 × 10⁻⁶. -4 Ωcm, refractive index 1.9-2.1, light transmittance greater than 90%; the transparent conductive protective film layer serves to achieve high light transmittance, collect current, and protect the internal film structure.
[0026] Furthermore, the buffer layer 4 is a thin film layer made by linear gas flow plasma sputtering of zinc tin oxide, indium tungsten oxide, indium cerium oxide, titanium oxide, aluminum oxide, or tin oxide, with a thickness of 10-80 nm. It has high chemical stability and serves the purpose of electron transport and protection of the inner film layer.
[0027] Furthermore, the electron transport layer 5 is a C60 film or a LiF film fabricated using linear thermal evaporation, with a thickness of 10-80 nm, serving the purpose of electron transport.
[0028] Furthermore, the perovskite absorber layer 6 is made of a mixed cationic perovskite material of Cs, FA and MA and is produced by linear thermal evaporation. Its band gap ranges from 1.65 to 1.70 eV and its thickness is 100-1000 nm. It serves to absorb light and convert it into electrons and holes.
[0029] Furthermore, the hole transport layer 7 is a thin film layer formed by vacuum magnetron sputtering of nickel oxide, nickel magnesium oxide, nickel copper oxide, nickel lithium oxide, copper aluminum oxide, or strontium copper oxide, with a thickness of 15~80nm, which serves the purpose of hole transport.
[0030] Furthermore, the interface conductive layer 8 is formed by vacuum sputtering indium tin oxide, indium tungsten oxide, indium hafnium oxide, indium gallium oxide, indium zirconium oxide, zinc aluminum oxide, zinc gallium oxide, or indium titanium oxide; its thickness is 15-35 nm, and its resistivity is less than 9 × 10⁻⁶. -4 Ωcm, with a refractive index of 1.9-2.1, serves to connect the multilayer film structure layer 9 and the hole transport layer 7 of the heterojunction solar cell.
[0031] Furthermore, the central part of the heterojunction solar cell multilayer film structure layer 9 is an N-type monocrystalline silicon wafer with a thickness of 50-180 μm. On the top surface of the N-type monocrystalline silicon wafer, there is a front intrinsic amorphous silicon layer with a thickness of 5-25 nm, which is fabricated by physical chemical vapor deposition. On the top surface of the front intrinsic amorphous silicon layer, there is a front n-type amorphous silicon layer with a thickness of 5-25 nm, which is fabricated by physical chemical vapor deposition. On the bottom surface of the N-type monocrystalline silicon wafer, there is a back intrinsic amorphous silicon layer with a thickness of 5-25 nm, which is fabricated by physical chemical vapor deposition. On the bottom surface of the back intrinsic amorphous silicon layer, there is a back p-type amorphous silicon layer with a thickness of 5-25 nm, which is fabricated by physical chemical vapor deposition.
[0032] Example 2: Based on Example 1, this invention provides a method for fabricating amorphous TCO-protected metal grid-lined heterojunction perovskite tandem solar cells, specifically including the following operations:
[0033] Before coating the multilayer film structure layer 9 of the heterojunction (HJT) cell, the N-type monocrystalline silicon substrate needs to undergo pretreatment, including cleaning, static elimination, and texturing. The front intrinsic amorphous silicon film layer, the back intrinsic amorphous silicon film layer, the front n-type microcrystalline silicon film layer, and the back p-type microcrystalline silicon film layer are coated in a plasma-enhanced chemical vapor deposition (PECVD) system by introducing silane (SiH4), phosphine (PH3), trimethylborane (TMB) (CH3), and H2 (Ar), respectively. Films are deposited sequentially on an N-type single-crystal silicon substrate at a substrate temperature of 150-500℃. The layers are: a 5-25nm thick intrinsic amorphous silicon film on the front side, a 5-25nm thick intrinsic amorphous silicon film on the back side, a 5-25nm thick n-type microcrystalline silicon film on the front side, and a 5-25nm thick p-type microcrystalline silicon film on the back side. The film deposition is completed sequentially in a plasma-enhanced chemical vapor deposition (PECVD) system, thereby completing the deposition of the multilayer film structure layer 9 of the heterojunction solar cell.
[0034] For the deposition of the interface conductive layer 8: the background pressure of the sputtering chamber was reduced to 0.7 × 10⁻⁶ using a vacuum pumping system. -5 ~0.9×10 -5 After torr, argon gas is used as the working gas, and the working pressure of the sputtering chamber is controlled to be 3×10 through a throttle valve. -3 The interface conductive layer 8 is deposited by vacuum sputtering indium tin oxide (ITO), indium tungsten oxide (IWO), indium hafnium oxide (IHO), indium gallium oxide (IGO), indium zirconium oxide (IZrO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO), or indium titanium oxide (ITiO) onto the front n-type microcrystalline silicon film layer.
[0035] For the deposition of the highly conductive transparent conductive film layer 10 on the back side: the background pressure of the sputtering chamber was reduced to 0.7 × 10⁻⁶ using a vacuum pumping system. -5 ~0.9×10 -5 After torr, argon gas is used as the working gas, and the working pressure of the sputtering chamber is controlled to be 3×10 through a throttle valve. -3 The target material is deposited on the back P-type microcrystalline silicon film using a target material with relevant materials, thereby completing the deposition of the back high conductivity transparent conductive film layer 10. The target material is a high mobility transparent conductive layer formed by sputtering materials such as indium tin oxide (ITO), indium tungsten oxide (IWO), indium hafnium oxide (IHO), indium gallium oxide (IGO), indium zirconium oxide (IZrO) or indium titanium oxide (ITiO) using a linear gas flow plasma cathode.
[0036] For the fabrication of hole transport layer 7: the background pressure of the vacuum magnetron sputtering chamber was reduced to 0.7 × 10⁻⁶ using a vacuum pumping system. -5 ~0.9×10 -5 After torr, using targets such as nickel oxide (NiO), nickel lithium oxide (NiLiO), nickel magnesium oxide (NiMgO), nickel copper oxide (NiCuO), copper aluminum oxide (CuAlO), or strontium copper oxide (SrCuO), nickel oxide (NiO), nickel magnesium oxide (NiMgO), nickel copper oxide (NiCuO), copper aluminum oxide (CuAlO), or strontium copper oxide (SrCuO) to sputter and deposit on the interface conductive layer 8, thereby completing the fabrication of the hole transport layer 7.
[0037] For the fabrication of perovskite light-absorbing layer 6: A perovskite material containing a mixture of Cs, FA, and MA cations was placed in a metal crucible of a linear thermal evaporation apparatus. The background pressure of the sputtering chamber was evacuated to 0.7 × 10⁻⁶ using a vacuum pumping system. -5 ~0.9×10 -5 After torr, the linear metal crucible is heated to 250°C, causing the material to thermally evaporate and adhere to the hole transport layer 7, thereby completing the preparation of the perovskite light-absorbing layer 6.
[0038] For the fabrication of electron transport layer 5: C60 or LiF material is placed in a metal crucible of a linear thermal evaporation apparatus, and the background pressure of the sputtering chamber is reduced to 0.7 × 10⁻⁶ using a vacuum pumping system. -5 ~0.9×10 -5 After torr, the linear metal crucible is heated to 300°C, causing the material to thermally evaporate and adhere to the perovskite light-absorbing layer 6, thereby completing the preparation of the electron transport layer 5, which has a thickness of 10-80 nm.
[0039] For the fabrication of buffer layer 4: linear gas flow plasma sputtering was used, and a vacuum pumping system was used to reduce the background pressure of the sputtering chamber to 0.7 × 10⁻⁶.-5 -0.9×10 -5 After torr, argon gas is used as the working gas, and the working pressure of the sputtering chamber is controlled to be 3×10 through a throttle valve. -3 Torr, materials such as indium tungsten oxide (IWO), indium cerium oxide (ICO), zinc tin oxide (ZTO), titanium oxide (TiO2), aluminum oxide (Al2O3), or tin oxide (SnO2) are sputtered onto the electron transport layer 5 to form a thin film layer with a thickness of 10~80nm, thereby completing the fabrication of the buffer layer 4.
[0040] For the deposition of the highly conductive transparent conductive film layer 3 on the front side: the background pressure of the sputtering chamber was reduced to 0.7 × 10⁻⁶ using a vacuum pumping system. -5 ~0.9×10 -5 After torr, argon gas is used as the working gas, and the working pressure of the sputtering chamber is controlled to be 3×10 through a throttle valve. -3 The target material is deposited on the n-type microcrystalline silicon film on the front side using a target material with relevant materials, thereby completing the deposition of the high conductivity transparent conductive film layer 3 on the front side. The target material is a high mobility transparent conductive layer formed by sputtering materials such as indium tin oxide (ITO), indium tungsten oxide (IWO), indium hafnium oxide (IHO), indium gallium oxide (IGO), indium zirconium oxide (IZrO) or indium titanium oxide (ITiO) using a linear gas flow plasma cathode.
[0041] For the fabrication of the front metal grid line 2 and the back metal grid line 11: Conductive grid lines are formed by using electroplating copper, printing silver paste, printing copper paste, or printing silver-clad copper, thereby completing the fabrication of the front metal grid line 2 and the back metal grid line 11.
[0042] For the fabrication of the front amorphous transparent conductive film layer 1 and the back amorphous transparent conductive film layer 12: the background pressure of the sputtering chamber was reduced to 0.7 × 10⁻⁶ using a vacuum pumping system. -5 ~0.9×10 -5 After torr, argon gas is used as the working gas, and the working pressure of the sputtering chamber is controlled to be 3×10 through a throttle valve. -3 The torr method uses a linear gas flow plasma cathode to sputter an amorphous transparent conductive film layer formed by indium zinc oxide (IZO) or indium tin zinc oxide (IZTO), thereby forming a protective layer on the front metal grid line 2 and the back metal grid line 11, thus completing the deposition of the front amorphous transparent conductive film layer 1 and the back amorphous transparent conductive film layer 12.
[0043] Although the embodiments of this utility model have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of this utility model as described in the claims. Moreover, the utility model described herein may have other embodiments and can be implemented or realized in various ways.
Claims
1. A heterojunction perovskite tandem solar cell with amorphous TCO-protected metal grid lines, characterized in that, The structure consists of, from top to bottom, a front amorphous transparent conductive film layer (1), a front metal grid line (2), a front highly conductive transparent conductive film layer (3), a buffer layer (4), an electron transport layer (5), a perovskite absorption layer (6), a hole transport layer (7), an interface conductive layer (8), a heterojunction cell multilayer film structure layer (9), a back highly conductive transparent conductive film layer (10), a back metal grid line (11), and a back amorphous transparent conductive film layer (12).
2. The heterojunction perovskite tandem solar cell with amorphous TCO-protected metal grid lines according to claim 1, characterized in that, The front amorphous transparent conductive film layer (1) and the back amorphous transparent conductive film layer (12) are amorphous transparent conductive film layers formed by linear gas flow plasma sputtering of indium zinc oxide or indium tin zinc oxide; the thickness is 30-80 nm, and the resistivity is less than 5 × 10⁻⁶. -4 Ωcm, refractive index 1.9-2.1, transmittance greater than 90%.
3. The heterojunction perovskite tandem solar cell with amorphous TCO-protected metal grid lines according to claim 1, characterized in that, The front metal grid line (2) and the back metal grid line (11) are metal grid lines formed by copper electroplating, printing silver paste, printing copper paste, or printing silver-coated copper paste; their thickness is 5-20 μm, their width is 10-100 μm, and their resistivity is less than 7 × 10⁻⁶. -6 Ωcm.
4. A heterojunction perovskite tandem solar cell with amorphous TCO-protected metal grid lines according to claim 1, characterized in that, The front highly conductive transparent conductive film layer (3) and the back highly conductive transparent conductive film layer (10) are transparent conductive films formed by linear gas flow plasma sputtering of indium tin oxide, indium tungsten oxide, indium hafnium oxide, indium gallium oxide, indium zirconium oxide, or indium titanium oxide; the thickness is 30-80 nm, and the resistivity is less than 5 × 10⁻⁶. -4 Ωcm, refractive index 1.9-2.1, transmittance greater than 90%.
5. A heterojunction perovskite tandem solar cell with amorphous TCO-protected metal grid lines according to claim 1, characterized in that, The buffer layer (4) is a thin film layer formed by linear gas flow plasma sputtering of zinc tin oxide, indium tungsten oxide, indium cerium oxide, titanium oxide, aluminum oxide or tin oxide, with a thickness of 10-80 nm.
6. A heterojunction perovskite tandem solar cell with amorphous TCO-protected metal grid lines according to claim 1, characterized in that, The electron transport layer (5) is a C60 film or a LiF film made by linear thermal evaporation, with a thickness of 10-80 nm.
7. A heterojunction perovskite tandem solar cell with amorphous TCO-protected metal grid lines according to claim 1, characterized in that, The perovskite absorber layer (6) is made of a mixed cationic perovskite material including Cs, FA and MA and is produced by linear thermal evaporation. Its band gap ranges from 1.65 to 1.70 eV and its thickness is 100-1000 nm.
8. A heterojunction perovskite tandem solar cell with amorphous TCO-protected metal grid lines according to claim 1, characterized in that, The hole transport layer (7) is a thin film layer formed by vacuum magnetron sputtering of nickel oxide, nickel magnesium oxide, nickel copper oxide, nickel lithium oxide, copper aluminum oxide or strontium copper oxide, with a thickness of 15~80nm.
9. A heterojunction perovskite tandem solar cell with amorphous TCO-protected metal grid lines according to claim 1, characterized in that, The interface conductive layer (8) is formed by vacuum sputtering indium tin oxide, indium tungsten oxide, indium hafnium oxide, indium gallium oxide, indium zirconium oxide, zinc aluminum oxide, zinc gallium oxide, or indium titanium oxide; the thickness is 15-35 nm, and the resistivity is less than 9×10⁻⁶. -4 Ωcm, refractive index 1.9-2.
1.
10. A heterojunction perovskite tandem solar cell with amorphous TCO-protected metal grid lines according to claim 1, characterized in that, The heterojunction solar cell multilayer film structure layer (9) has an N-type monocrystalline silicon wafer with a thickness of 50-180 μm at its center. Its top surface is provided with a front intrinsic amorphous silicon layer with a thickness of 5-25 nm, which is made by physical and chemical vapor deposition. The top surface of the front intrinsic amorphous silicon layer is provided with a front n-type amorphous silicon layer with a thickness of 5-25 nm, which is made by physical and chemical vapor deposition. The bottom surface of the N-type monocrystalline silicon wafer is provided with a back intrinsic amorphous silicon layer with a thickness of 5-25 nm, which is made by physical and chemical vapor deposition. The bottom surface of the back intrinsic amorphous silicon layer is provided with a back p-type amorphous silicon layer with a thickness of 5-25 nm, which is made by physical and chemical vapor deposition.