Bias supply circuit

Abstract

This disclosure provides a bias supply circuit including first and second diode-connected transistors, first and second impedance elements, and first and second transistors. The first impedance element is connected between the first source / drain terminal of the first diode-connected transistor and a first power supply voltage. The first diode-connected transistor and the gate terminal of the first transistor are interconnected. The second impedance element is connected between the second source / drain terminal of the first diode-connected transistor and the first source / drain terminal of the second diode-connected transistor. The second source / drain terminal of the second diode-connected transistor is coupled to a second power supply voltage. The second diode-connected transistor and the gate terminal of the second transistor are interconnected. The first and second diode-connected transistors have a first conductivity type.

Description

Technical Field

[0001] This disclosure document pertains to the bias supply circuitry. Background Technology

[0002] The semiconductor industry has experienced rapid growth due to a series of improvements in the integration density of various electronic components (such as transistors, diodes, resistors, capacitors, etc.). These improvements in integration density primarily stem from the continuous reduction in the size of the smallest feature, allowing more components to be integrated into a given area. Utility Model Content

[0003] This disclosure provides a bias supply circuit. The bias supply circuit includes a first diode-connected transistor, a second diode-connected transistor, a first impedance element, a second impedance element, a first transistor, and a second transistor. The first impedance element is connected between the first source / drain terminal of the first diode-connected transistor and a first power supply voltage. The gate terminal of the first diode-connected transistor and the gate terminal of the first transistor are interconnected. The second impedance element is connected between the second source / drain terminal of the first diode-connected transistor and the first source / drain terminal of the second diode-connected transistor. The second source / drain terminal of the second diode-connected transistor is coupled to a second power supply voltage. The gate terminal of the second diode-connected transistor and the gate terminal of the second transistor are interconnected. The first diode-connected transistor and the second diode-connected transistor have a first conductivity type.

[0004] This disclosure provides a bias voltage providing circuit. The bias voltage providing circuit includes a first reference portion, a second reference portion, a first driving portion, and a second driving portion. The first reference portion and the second reference portion are interconnected and coupled between a power supply voltage and ground. The first driving portion and the second driving portion are coupled to the first reference portion and the second reference portion, respectively. The first reference portion includes a first diode-connected transistor and a first resistor; the second reference portion includes a second diode-connected transistor and a second resistor; the first driving portion includes a first transistor; and the second driving portion includes a second transistor. The first diode-connected transistor, the second diode-connected transistor, and the first transistor have a first conductivity type, and the second transistor has a second conductivity type opposite to the first conductivity type.

[0005] This disclosure provides a bias supply circuit. The bias supply circuit includes a first transistor, a second transistor, a first diode-connected transistor, a second diode-connected transistor, a first impedance element, and a second impedance element. The gate terminals of the first diode-connected transistor and the first transistor are interconnected. The gate terminals of the second diode-connected transistor and the second transistor are interconnected. The first impedance element is coupled between a power supply voltage and the first source / drain terminals of the first diode-connected transistor. The second impedance element is coupled between the second source / drain terminals of the first diode-connected transistor and the first source / drain terminals of the second diode-connected transistor. The first source / drain terminals and the gate terminals of the first diode-connected transistor are interconnected, and the second source / drain terminals and the gate terminals of the second diode-connected transistor are interconnected. The second source / drain terminal of the first diode-connected transistor and the second impedance element are connected to a node that presents a voltage equal to a fraction of the power supply voltage. The first diode-connected transistor and the second diode-connected transistor have the same conductivity type. Attached Figure Description

[0006] The embodiments of this disclosure will be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, according to standard industry practice, the features are not drawn to scale. In fact, the dimensions of the features may be increased or decreased arbitrarily for clarity of explanation.

[0007] Figure 1 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0008] Figure 2 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0009] Figure 3 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0010] Figure 4 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0011] Figure 5 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0012] Figure 6 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0013] Figure 7 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0014] Figure 8Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0015] Figure 9 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0016] Figure 10 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0017] Figure 11 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0018] Figure 12 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0019] Figure 13 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0020] Figure 14 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0021] Figure 15 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0022] Figure 16 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0023] Figure 17 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0024] Figure 18 Example circuit diagrams of bias supply circuits according to some embodiments are shown;

[0025] Figure 19 Example circuit diagrams of bias supply circuits according to some embodiments are illustrated; and

[0026] Figure 20 A flowchart illustrating an example method for forming a bias supply circuit according to some embodiments is shown.

[0027] [Symbol Explanation]

[0028] 100, 200, 300, 400, 500: Bias voltage supply circuit

[0029] 600, 700, 800, 900, 1000: Bias supply circuit

[0030] 1100, 1200, 1300, 1400: Bias voltage supply circuit

[0031] 1500, 1700, 1800, 1900: Bias voltage supply circuit

[0032] 2000: Bias supply circuit

[0033] 102, 202, 302: First diode connected to transistor / transistor

[0034] 402, 602, 702: First diode connected to transistor / transistor

[0035] 802, 902, 1102: First diode connected to transistor / transistor

[0036] 104, 204, 304: Second diode connected to transistor / transistor

[0037] 404, 604, 704: Second diode connected to transistor / transistor

[0038] 804, 904, 1104: Second diode connected to transistor / transistor

[0039] 106: First impedance element / impedance element / resistor

[0040] 206, 306, 406, 606, 706: First impedance element

[0041] 806, 906: First impedance element

[0042] 1108: First impedance element / impedance element

[0043] 108: Second impedance element / impedance element / resistor

[0044] 208, 308, 408, 608, 708: Second impedance element

[0045] 808, 908: Second impedance element

[0046] 1110: Second impedance element / impedance element

[0047] 110, 210, 610, 710, 1114: First transistor / transistor

[0048] 112,212,612,712,1116: Second transistor / transistor

[0049] 120, 220, 340, 430, 620, 720: First reference section

[0050] 130, 230, 350, 440, 630, 730: Second Reference Section

[0051] 140, 640: Drive section

[0052] 1720_1~1720_N: Drive / Bias Section

[0053] 1820_1~1820_N: Drive section

[0054] 1920_1~1920_N: Drive / Bias Section

[0055] 2020_1~2020_N: Driver section

[0056] 150, 240, 360, 450, 650, 740: Bias voltage range

[0057] 1710_1~1710_N, 1810_1~1810_N: Bias voltage section

[0058] 1910_1~1910_N, 2010_1~2010_N: Bias section

[0059] 214, 216, 218, 310, 312, 314, 316, 318: Transistors; 320, 322, 324, 326, 328, 330, 332, 334: Transistors; 410, 412, 414, 416, 418, 424, 426: Transistors

[0060] 510, 520, 530, 540, 714, 716, 718: Transistors

[0061] 810, 812, 814, 816, 818: Transistors

[0062] 820, 822, 824, 826, 828, 830, 832, 834: Transistors

[0063] 910, 912, 914, 916, 918, 924, 926: Transistors

[0064] 1010, 1020, 1030: Transistors

[0065] 1202, 1204, 1206, 1208: Transistors

[0066] 1302, 1304, 1306, 1308, 1310: Transistors

[0067] 1312, 1314, 1316, 1318, 1320: Transistors

[0068] 1402, 1404, 1406, 1408: Transistors

[0069] 1502, 1504, 1506, 1508, 1510: Transistors

[0070] 1512, 1514, 1516, 1518, 1520: Transistors

[0071] 250, 380, 470, 750: First drive section

[0072] 260, 390, 480, 760: Second drive section

[0073] 370, 460: Gain section

[0074] 420, 920: First current source

[0075] 422,922: Second current source

[0076] 1106: Third diode connected to transistor / transistor

[0077] 1112: Third impedance element / impedance element

[0078] 1118: Third transistor / transistor

[0079] 2100: Method

[0080] 2110, 2120, 2130, 2140: Operations

[0081] A, A1, A2, B, B1, B2, C: Shared nodes

[0082] V A V A2 First voltage / voltage

[0083] V B V A1 Second voltage / voltage

[0084] V B1 Fourth voltage / voltage

[0085] V C V B2 Third voltage / voltage

[0086] VDD: Power supply voltage Detailed Implementation

[0087] The following disclosure provides numerous different embodiments or examples to implement different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify embodiments of this disclosure. Of course, these are merely examples and are not intended to be limiting. For instance, in the following description, the formation of a first feature above or on a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features may be formed between the first and second features such that the first and second features are not in direct contact. Furthermore, the embodiments of this disclosure may repeat element symbols and / or letters in various examples. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0088] Furthermore, for ease of description, this document uses spatially relative terms (such as "below," "below," "lower part," "above," "upper part," and similar) to describe the relationship between one element or feature illustrated in the figures and another element (or features) or feature (or features). In addition to the orientations depicted in the figures, spatially relative terms are intended to encompass different orientations of elements in use or operation. Devices may be oriented in other ways (rotated 90 degrees or in other orientations) and therefore the spatially relative descriptive terms used herein can be interpreted similarly.

[0089] Generally, electronic devices (e.g., integrated chips) may contain various components for a variety of functions. For example, an electronic device may contain at least one of an electronically programmable fuse, one-time programmable memory, dynamic random-access memory (DRAM), a core-only high-voltage circuit, or a processor. Different components in an electronic device can operate using different bias voltages. Furthermore, given the increasing trend of integrating more components onto a single chip, there is a need for components that can operate effectively under low supply voltage conditions. Therefore, fractional times the supply voltage (e.g., half the supply voltage VDD) are typically provided as the bias voltage for operation. For example, in a DRAM device, the bit lines of the DRAM device may be pre-charged to or biased at half the supply voltage VDD as a reference voltage for the following read / write operations.

[0090] This disclosure provides various embodiments of a bias supply circuit that can provide one or more bias voltages, each of which may be a fractional multiple of a supply voltage (e.g., supply voltage VDD). For example, as disclosed herein, the bias supply circuit may include a first reference portion and a second reference portion coupled between a first supply voltage (e.g., supply voltage VDD) and a second supply voltage (e.g., ground) to divide the difference between the first and second supply voltages. The bias supply circuit may provide a bias voltage (e.g., a fractional multiple of supply voltage VDD) at a node connected between the first and second reference portions. The first reference portion may include a first impedance element (e.g., a first resistor) and a first diode-connected transistor, and the second reference portion may include a second impedance element (e.g., a second resistor) and a second diode-connected transistor. In various embodiments of this disclosure, the first diode-connected transistor and the second diode-connected transistor have the same conductivity type, for example, both n-type or both p-type. Due to having the same conductivity type, variations in the bias voltage that would typically arise from the respective threshold voltages of transistors with different conductivity types can be advantageously minimized. Therefore, the bias supply circuit can accurately provide a fractional multiple of the bias voltage without being affected by process voltage-temperature (PVT) variations.

[0091] Figure 1 An example circuit diagram of a bias supply circuit 100 according to some embodiments is shown. The bias supply circuit 100 is coupled between the power supply voltage VDD and ground to provide a fractional multiple of the power supply voltage VDD, such as 1 / 2 times the power supply voltage VDD. It should be understood that... Figure 1 The circuit diagrams are for illustrative purposes only and are not intended to limit the scope of this disclosure. Therefore, Figure 1 The bias supply circuit 100 shown may include any of a variety of other components, while still remaining within the scope of this disclosure.

[0092] As shown in the figure, the bias supply circuit 100 includes a first diode-connected transistor 102, a second diode-connected transistor 104, a first impedance element 106, a second impedance element 108, a first transistor 110, and a second transistor 112. In some embodiments, the first impedance element 106 and the second impedance element 108 may each include a resistor, a transistor, a diode, or any other element that can provide impedance to the bias supply circuit 100. Figure 1In the illustrative example, the first impedance element 106 is implemented as a first resistor, and the second impedance element 108 is implemented as a second resistor, wherein the first and second resistors have the same resistance value. In some embodiments, the first diode-connected transistor 102 and the second diode-connected transistor 104 have the same conductivity type, for example, in Figure 1 In all examples, they are of type n. Furthermore, the first transistor 110 and the first diode-connected transistor 102 have the same conductivity type, and the second transistor 112 and the second diode-connected transistor 104 have the same conductivity type.

[0093] Components of the bias supply circuit 100 are coupled between a first supply voltage (e.g., supply voltage VDD) and a second supply voltage (e.g., ground). For example, the first impedance element 106 has a first terminal connected to the supply voltage VDD and a second terminal connected to the first source / drain terminal of the first diode-connected transistor 102, which is also connected to the gate terminal of the first diode-connected transistor 102; the second source / drain terminal of the first diode-connected transistor 102 is connected at a common node A to the first terminal of the second impedance element 108, which presents a first voltage VDD. A The second impedance element 108 further has a second terminal connected to the first source / drain terminal of the second diode-connected transistor 104, which is also connected to the gate terminal of the second diode-connected transistor 104; and the second source / drain terminal of the second diode-connected transistor 104 is grounded. Further, the gate terminal of the first transistor 110 is connected to the gate terminal of the first diode-connected transistor 102, wherein the first source / drain terminal and the second source / drain terminal of the first transistor 110 are respectively connected to the power supply voltage VDD and a common node B, which presents a second voltage VDD. B The gate of the second transistor 112 is connected to the gate of the second diode-connected transistor 104, wherein the first source / drain terminal and the second source / drain terminal of the second transistor 112 are respectively connected to the common node B and ground.

[0094] In some embodiments, a first diode connects transistor 102 and a first impedance element 106 as a first reference portion 120, a second diode connects transistor 104 and a second impedance element 108 as a second reference portion 130, a first transistor 110 as a drive portion 140, and a second transistor 112 as a bias portion 150. Generally, according to various embodiments of this disclosure, the reference portion is used to provide a reference voltage for the bias voltage, the bias portion is used to provide a bias voltage based on the reference voltage, and the drive portion is used to provide or absorb the bias voltage.

[0095] In some embodiments, the first transistor 110 and the first diode-connected transistor 102 can be used together as a current mirror, while the second transistor 112 and the second diode-connected transistor 104 can be used together as another current mirror. The current mirror formed by transistors 102 and 110 can be used to supply current to the common node B. Since the first reference portion and the second reference portion are substantially similar (e.g., impedance elements 106 and 108 have the same resistance value or other impedance), the first voltage V A (Sometimes referred to as the reference voltage) can be approximately half the supply voltage VDD. Furthermore, since the first drive section and the second drive section are substantially similar to the first reference section and the second reference section, respectively (for example, the first transistor 110 and the first diode-connected transistor 102 have the same threshold voltage, and the second transistor 112 and the second diode-connected transistor 104 have the same threshold voltage), therefore the second voltage VDD... B (Sometimes called bias voltage) can be compared with the first (reference) voltage V. A They are essentially similar. That is, V A ≈V B ≈VDD / 2.

[0096] Figure 2 An example circuit diagram of another bias supply circuit 200 according to some embodiments is shown. The bias supply circuit 200 is similar to the bias supply circuit 100. Figure 1 They are substantially similar, except that the bias supply circuit 200 further includes some additional components (or parts). Therefore, the following discussion of the bias supply circuit 200 will focus on the differences between the bias supply circuit 100 and the bias supply circuit 200. It should be understood that... Figure 2 The circuit diagrams are for illustrative purposes only and are not intended to limit the scope of this disclosure. Therefore, Figure 2 The bias supply circuit 200 shown may include any of a variety of other components, while still remaining within the scope of this disclosure.

[0097] As shown in the figure, the bias supply circuit 200 includes transistors 214, 216, and 218, except for the first diode-connected transistor 202, the second diode-connected transistor 204, the first impedance element 206, the second impedance element 208, the first transistor 210, and the second transistor 212 (which are substantially similar to the first diode-connected transistor 102, the second diode-connected transistor 104, the first impedance element 106, the second impedance element 108, the first transistor 110, and the second transistor 112, respectively). Transistor 218 may have the same conductivity type as transistor 210 (e.g., n-type), while transistors 214 and 216 may have the opposite conductivity type (e.g., p-type).

[0098] In some embodiments, the gate of transistor 218 can be connected to the gate of transistor 210 and the first diode-connected transistor 202, the first source / drain terminal is connected to the power supply voltage VDD, and the second source / drain terminal is connected to transistor 216. The gates of transistors 214 and 216 can be interconnected, and one of the source / drain terminals of each of transistors 214 and 216 can be connected to a common node B and another common node C, which presents a third voltage VDD. C Transistors 214 and 216 can be used together as another current mirror. In some embodiments, the first diode connected to transistor 202 and the first impedance element 206 is used as a first reference portion 220, the second diode connected to transistor 204 and the second impedance element 208 is used as a second reference portion 230, transistors 210, 212, and 214 are used as a bias portion 240, transistor 218 is used as a first drive portion 250, and transistor 216 is used as a second drive portion 260. The first drive portion 250 can output a third voltage V. C Furthermore, the second drive section 260 can absorb the third voltage V. C The third voltage V C (Bias voltage) can be substantially similar to the second voltage V. B (Another bias voltage), while the second voltage V B Essentially similar to the first voltage V A (Reference voltage). That is, V A ≈V B ≈V C ≈VDD / 2.

[0099] Figure 3 An example circuit diagram of another bias supply circuit 300 according to some embodiments is shown. The bias supply circuit 300 is related to the bias supply circuit 200 (…). Figure 2 They are substantially similar, except that the bias supply circuit 300 further includes some additional components (or parts thereof). Therefore, the following discussion of the bias supply circuit 300 will focus on the differences between the bias supply circuit 200 and the bias supply circuit 300. It should be understood that... Figure 3 The circuit diagrams are for illustrative purposes only and are not intended to limit the scope of this disclosure. Therefore, Figure 3 The bias supply circuit 300 shown may include any of a variety of other components, while still remaining within the scope of this disclosure.

[0100] As shown in the figure, apart from the first diode connected to transistor 302, the second diode connected to transistor 304, the first impedance element 306, the second impedance element 308, and transistors 310, 312, 314, 316, and 318 (which are substantially similar to the first diode connected to transistor 202, the second diode connected to transistor 204, the first impedance element 206, the second impedance element 208, and transistors 210, 212, 214, 216, and 218, respectively), the bias supply circuit 300 includes transistors 320, 322, 324, 326, 328, 330, 332, and 334. Transistors 320, 322, and 332, 334 may have the same conductivity type (e.g., p-type), while transistors 324, 326, and 328, 330 may have opposite conductivity types (e.g., n-type).

[0101] In some embodiments, the gates of transistors 320 and 322 can be interconnected, the gates of transistors 324 and 326 can be interconnected, the gates of transistors 328 and 330 can be interconnected, and the gates of transistors 332 and 334 can be interconnected. The pairing of transistors 320 and 322, transistors 324 and 326, transistors 328 and 330, and transistors 332 and 334 can each be used together as a current mirror. One of the source / drain terminals of transistors 330 and 334 can be interconnected at a common node D, which is connected to a common node C (thus presenting a third voltage V). C In some embodiments, the first diode connecting transistor 302 and the first impedance element 306 is used as a first reference portion 340; the second diode connecting transistor 304 and the second impedance element 308 is used as a second reference portion 350; transistors 310, 312, and 314 are used as a bias portion 360; transistors 316, 318, 320, 322, 324, 326, 328, and 332 are used as a gain portion 370; transistor 330 is used as a first drive portion 380; and transistor 334 is used as a second drive portion 390. The first drive portion 380 can provide a third voltage V. C Furthermore, the second drive section 390 can absorb the third voltage V. C Furthermore, according to various embodiments of this disclosure, the gain portion is used to provide an amplified voltage V to the drive portion that provides / absorbs the bias voltage during the transition state. gs Swing amplitude, which helps improve the buffering capacity of the drive section. Third voltage V C (Bias voltage) can be substantially similar to the second voltage V. B (Another bias voltage), while the second voltage V B Essentially similar to the first voltage V A(Reference voltage). That is, V A ≈V B ≈V C ≈VDD / 2.

[0102] Figure 4 An example circuit diagram of another bias supply circuit 400 according to some embodiments is shown. The bias supply circuit 400 and the bias supply circuit 200 ( Figure 2 They are essentially similar, except that the bias supply circuit 400 further includes some other components (or parts). Figure 5 Another example circuit diagram is shown, in which some components of the bias supply circuit 400 are implemented down to the transistor level. Therefore, the following discussion of the bias supply circuits 400 / 500 will focus on the differences between the bias supply circuits 200 and 400 / 500. It should be understood that... Figure 4 and Figure 5 The circuit diagrams are for illustrative purposes only and are not intended to limit the scope of this disclosure. Therefore, the bias supply circuit 400 ( Figure 4 ) and bias supply circuit 500 ( Figure 5 Each may contain any of various other components, while remaining within the scope of this disclosure.

[0103] As shown in the figure, besides the first diode connected to transistor 402, the second diode connected to transistor 404, the first impedance element 406, the second impedance element 408, and transistors 410, 412, 414, 416, and 418 (which are substantially similar to the first diode connected to transistor 202, the second diode connected to transistor 204, the first impedance element 206, the second impedance element 208, and transistors 210, 212, 214, 216, and 218, respectively), the bias supply circuit 400 includes a first current source 420, a second current source 422, and transistors 424 and 426. The first current source 420 can be formed by transistors 510 and 520, and the second current source 422 can be formed by transistors 530 and 540, as shown. Figure 5 As shown. Transistors 424, 510, 520, 530, and 540 may have the same conductivity type (e.g., p-type), while transistor 426 may have the opposite conductivity type (e.g., n-type).

[0104] In some embodiments, a first diode connected to transistor 402 and a first impedance element 406 is used as a first reference portion 430; a second diode connected to transistor 404 and a second impedance element 408 is used as a second reference portion 440; transistors 410, 412, 414 and a portion of current sources 420, 422 (e.g., transistors 510, 530) are used as a bias portion 450; a portion of current sources 420, 422 (e.g., transistors 520, 540) and transistors 416, 418 are used as a gain portion 460; transistor 424 is used as a first drive portion 470; and transistor 426 is used as a second drive portion 480. The first drive portion 470 can provide a third voltage V. C The second drive section 480 can absorb the third voltage V. C Furthermore, according to various embodiments of this disclosure, the gain portion is used to provide an amplified voltage V to the drive portion that provides / absorbs the bias voltage during the transition state. gs Swing amplitude, which helps improve the buffering capacity of the drive section. Third voltage V C (Bias voltage) can be substantially similar to the second voltage V. B (Another bias voltage), while the second voltage V B Essentially similar to the first voltage V A (Reference voltage). That is, V A ≈V B ≈V C ≈VDD / 2.

[0105] Figure 6 An example circuit diagram of another bias supply circuit 600 according to some embodiments is shown. The bias supply circuit 600 is related to the bias supply circuit 100 (…). Figure 1 They are essentially similar, the difference being that the components of bias supply circuit 600 have opposite conductivity types. Therefore, the following discussion of bias supply circuit 600 will focus on the differences between bias supply circuit 100 and bias supply circuit 600. It should be understood that... Figure 6 The circuit diagrams are for illustrative purposes only and are not intended to limit the scope of this disclosure. Therefore, Figure 6 The bias supply circuit 600 shown may include any of a variety of other components, while remaining within the scope of this disclosure.

[0106] As shown in the figure, the bias supply circuit 600 includes a first diode-connected transistor 602, a second diode-connected transistor 604, a first impedance element 606, a second impedance element 608, a first transistor 610, and a second transistor 612. In some embodiments, the first impedance element 606 and the second impedance element 608 may each include a resistor, a transistor, a diode, or any other element that can provide impedance to the bias supply circuit 600. Figure 6 In the illustrative example, the first impedance element 606 is implemented as a first resistor, and the second impedance element 608 is implemented as a second resistor, wherein the first and second resistors have the same resistance value. In some embodiments, the first diode-connected transistor 602 and the second diode-connected transistor 604 have the same conductivity type, for example in... Figure 6 In all examples, they are p-type. Furthermore, the first transistor 610 and the first diode-connected transistor 602 have the same conductivity type, and the second transistor 612 and the second diode-connected transistor 604 have the same conductivity type.

[0107] Components of the bias supply circuit 600 are coupled between a first supply voltage (e.g., supply voltage VDD) and a second supply voltage (e.g., ground). For example, a first impedance element 606 has a first terminal connected to the supply voltage VDD and a second terminal connected to the first source / drain terminal of a first diode-connected transistor 602, which is also connected to the gate terminal of the first diode-connected transistor 602; the second source / drain terminal of the first diode-connected transistor 602 is connected at a common node A to the first terminal of a second impedance element 608, which presents a first voltage VDD. A The second impedance element 608 further has a second terminal connected to the first source / drain terminal of the second diode-connected transistor 604, which is also connected to the gate terminal of the second diode-connected transistor 604; and the second source / drain terminal of the second diode-connected transistor 604 is grounded. Further, the gate terminal of the first transistor 610 is connected to the gate terminal of the first diode-connected transistor 602, wherein the first and second source / drain terminals of the first transistor 610 are respectively connected to VDD and a common node B, which presents a second voltage V. B Furthermore, the gate terminal of the second transistor 612 is connected to the gate terminal of the second diode-connected transistor 604, wherein the first and second source / drain terminals of the second transistor 612 are connected to the common node B and ground, respectively.

[0108] In some embodiments, a first diode connects transistor 602 and a first impedance element 606 as a first reference portion 620, a second diode connects transistor 604 and a second impedance element 608 as a second reference portion 630, a first transistor 610 as a driving portion 640, and a second transistor 612 as a bias portion 650. Generally, according to various embodiments of this disclosure, the reference portion is used to provide a reference voltage for the bias voltage, the bias portion is used to provide a bias voltage based on the reference voltage, and the driving portion is used to provide or absorb the bias voltage. A second voltage V, sometimes referred to as the bias voltage, is... B It can be compared with a first voltage V, which is sometimes referred to as the reference voltage. A They are essentially similar. That is, V A ≈V B ≈VDD / 2.

[0109] Figure 7 An example circuit diagram of another bias supply circuit 700 according to some embodiments is shown. The bias supply circuit 700 is similar to the bias supply circuit 600. Figure 6 They are substantially similar, except that the bias supply circuit 700 further includes some additional components (or parts thereof). Therefore, the following discussion of the bias supply circuit 700 will focus on the differences between the bias supply circuit 600 and the bias supply circuit 700. It should be understood that... Figure 7 The circuit diagrams are for illustrative purposes only and are not intended to limit the scope of this disclosure. Therefore, Figure 7 The bias supply circuit 700 shown may include any of a variety of other components, while remaining within the scope of this disclosure.

[0110] As shown in the figure, the bias supply circuit 700 includes transistors 714, 716, and 718, except for the first diode-connected transistor 702, the second diode-connected transistor 704, the first impedance element 706, the second impedance element 708, the first transistor 710, and the second transistor 712 (which are substantially similar to the first diode-connected transistor 602, the second diode-connected transistor 604, the first impedance element 606, the second impedance element 608, the first transistor 610, and the second transistor 612, respectively). Transistor 718 may have the same conductivity type as transistor 712 (e.g., p-type), while transistors 714 and 716 may have the opposite conductivity type (e.g., n-type).

[0111] In some embodiments, the gate of transistor 718 can be connected to the gate of transistor 712 and diode-connected transistor 704, the first source / drain terminal is grounded, and the second source / drain terminal is connected to transistor 716. The gates of transistors 714 and 716 can be interconnected, and one of the source / drain terminals of transistors 714 and 716 can be connected to a common node B and another common node C, which presents a third voltage V. C Transistors 714 and 716 can be used together as another current mirror. In some embodiments, a first diode connected to transistor 702 and a first impedance element 706 is used as a first reference portion 720, a second diode connected to transistor 704 and a second impedance element 708 is used as a second reference portion 730, transistors 710, 712, and 714 are used as a bias portion 740, transistor 716 is used as a first drive portion 750, and transistor 718 is used as a second drive portion 760. The first drive portion can provide a third voltage V. C Furthermore, the second driving section can absorb the third voltage V. C The third voltage V C (Bias voltage) can be substantially similar to the second voltage V. B (Another bias voltage), and this second voltage V B Essentially similar to the first voltage V A (Reference voltage). That is, V A ≈V B ≈V C ≈VDD / 2.

[0112] Figure 8 An example circuit diagram of another bias supply circuit 800 according to some embodiments is shown. The bias supply circuit 800 and the bias supply circuit 700 ( Figure 7 They are essentially similar, except that the bias supply circuit 800 further includes some additional components (or parts thereof). Therefore, the following discussion of the bias supply circuit 800 will focus on the differences between the bias supply circuit 700 and the bias supply circuit 800. It should be understood that... Figure 8 The circuit diagrams are for illustrative purposes only and are not intended to limit the scope of this disclosure. Therefore, Figure 8 The bias supply circuit 800 shown may include any of a variety of other components, while remaining within the scope of this disclosure.

[0113] As shown in the figure, apart from the first diode connected to transistor 802, the second diode connected to transistor 804, the first impedance element 806, the second impedance element 808, and transistors 810, 812, 814, 816, and 818 (which are substantially similar to the first diode connected to transistor 702, the second diode connected to transistor 704, the first impedance element 706, the second impedance element 708, and transistors 710, 712, 714, 716, and 718, respectively), the bias supply circuit 800 includes transistors 820, 822, 824, 826, 828, 830, 832, and 834. Transistors 820, 822, and 832, 834 may have the same conductivity type (e.g., p-type), while transistors 824, 826, and 828, 830 may have the opposite conductivity type (e.g., n-type).

[0114] In some embodiments, the gates of transistors 820 and 822 can be interconnected, the gates of transistors 824 and 826 can be interconnected, the gates of transistors 828 and 830 can be interconnected, and the gates of transistors 832 and 834 can be interconnected. The pairing of transistors 820 and 822, transistors 824 and 826, transistors 828 and 830, and transistors 832 and 834 can each be used together as a current mirror. One of the source / drain terminals of transistors 830 and 834 can be interconnected at a common node D, which is connected to a common node C (thus presenting a third voltage V). C In some embodiments, the first diode connected to transistor 802 and the first impedance element 806 is used as a first reference portion; the second diode connected to transistor 804 and the second impedance element 808 is used as a second reference portion; transistors 810, 812, and 814 are used as a bias portion; transistors 816, 818, 820, 822, 824, 826, 828, and 832 are used as a gain portion; transistor 830 is used as a first drive portion; and transistor 834 is used as a second drive portion. The first drive portion can provide a third voltage V. C Furthermore, the second driving section can absorb the third voltage V. C Furthermore, according to various embodiments of this disclosure, the gain portion is used to provide an amplified voltage V to the drive portion that provides / absorbs the bias voltage during the transition state. gs The swing amplitude effectively improves the buffering capability of the drive section. Third voltage V C (Bias voltage) can be substantially similar to the second voltage V. B (Another bias voltage), and this second voltage V B Essentially similar to the first voltage V A (Reference voltage), that is, V A ≈VB ≈V C ≈VDD / 2.

[0115] Figure 9 An example circuit diagram of another bias supply circuit 900 according to some embodiments is shown. The bias supply circuit 900 is related to the bias supply circuit 700. Figure 7 They are essentially similar, except that the bias supply circuit 900 further includes some other components (or parts). Figure 10 Another example circuit diagram is shown, in which some components of the bias supply circuit 900 are implemented down to the transistor level. Therefore, the following discussion of the bias supply circuits 900 / 1000 will focus on the differences between the bias supply circuit 700 and the bias supply circuits 900 / 1000. It should be understood that... Figure 9 and Figure 10 The circuit diagrams are for illustrative purposes only and are not intended to limit the scope of this disclosure. Therefore, the bias supply circuit 900 ( Figure 9 ) and bias supply circuit 1000 ( Figure 10 Each may contain any of various other components, while remaining within the scope of this disclosure.

[0116] As shown in the figure, besides the first diode connected to transistor 902, the second diode connected to transistor 904, the first impedance element 906, the second impedance element 908, and transistors 910, 912, 914, 916, and 918 (which are substantially similar to the first diode connected to transistor 702, the second diode connected to transistor 704, the first impedance element 706, the second impedance element 708, and transistors 710, 712, 714, 716, and 718, respectively), the bias supply circuit 900 includes a first current source 920, a second current source 922, and transistors 924 and 926. The first current source 920 can be formed by transistor 1010, and the second current source 922 can be formed by transistors 1020 and 1030, as shown. Figure 10 As shown. Transistors 924 and 1010 may have the same conductivity type (e.g., p-type), while transistors 1020 and 1030 may have opposite conductivity types (e.g., n-type).

[0117] In some embodiments, the first diode connected to transistor 902 and the first impedance element 906 is used as a first reference portion; the second diode connected to transistor 904 and the second impedance element 908 is used as a second reference portion; transistors 910, 912, 914 and a portion of current source 922 (e.g., transistor 1020) are used as a bias portion; a portion of current sources 920, 922 (e.g., transistors 1010, 1030) and transistors 916, 918 are used as a gain portion; transistor 924 is used as a first drive portion; and transistor 926 is used as a second drive portion. The first drive portion can provide a third voltage V. C Furthermore, the second driving section can absorb the third voltage V. C Furthermore, according to various embodiments of this disclosure, the gain portion is used to provide an amplified voltage V to the drive portion that provides / absorbs the bias voltage during the transition state. gs Swing amplitude, which helps improve the buffering capacity of the drive section. Third voltage V C (Bias voltage) can be substantially similar to the second voltage V. B (Another bias voltage), and this second voltage V B Essentially similar to the first voltage V A (Reference voltage). That is, V A ≈V B ≈V C ≈VDD / 2.

[0118] Figure 11 , Figure 12 , Figure 13 , Figure 14 and Figure 15 Example circuit diagrams of bias supply circuits 1100, 1200, 1300, 1400, and 1500 according to some embodiments are shown. Bias supply circuits 1100, 1200, 1300, 1400, and 1500 are all coupled between the power supply voltage VDD and ground. (The last sentence appears to be incomplete and possibly refers to a different circuit.) Figure 1 )compared to, Figure 11 The bias supply circuit 1100 further includes another bias section and another driving section. Therefore, the bias supply circuit 1100 can provide a supply voltage difference less than 1 / 2 times the supply voltage VDD, for example, 1 / 3 times and / or a multiple thereof, such as 2 times 1 / 3 times the supply voltage VDD. Furthermore, bias supply circuits 1200, 1300, 1400, and 1500 (… Figures 12 to 15 Since the bias supply circuit 1100 is substantially similar to the bias supply circuit 1200, 1300, 1400, and 1500, the following discussion will focus on their differences. It should be understood that... Figures 11 to 15 The circuit diagrams are for illustrative purposes only and are not intended to limit the scope of this disclosure. Therefore, Figures 11 to 15 The bias supply circuits 1100, 1200, 1300, 1400, and 1500 shown may each contain any of a variety of other components, while remaining within the scope of this disclosure.

[0119] First see Figure 11 The bias supply circuit 1100 includes a first diode-connected transistor 1102, a second diode-connected transistor 1104, a third diode-connected transistor 1106, a first impedance element 1108, a second impedance element 1110, a third impedance element 1112, a first transistor 1114, a second transistor 1116, and a third transistor 1118. In some embodiments, the first impedance element 1108 to the third impedance element 1112 may each include a resistor, a transistor, a diode, or any other element that can provide impedance to the bias supply circuit 1100.

[0120] exist Figure 11 In an exemplary example, the first impedance element 1108 is implemented as a first resistor, the second impedance element 1110 is implemented as a second resistor, and the third impedance element 1112 is implemented as a third resistor, wherein the first to third resistors have the same resistance value. In some embodiments, the first diode-connected transistor 1102 to the third diode-connected transistor 1106 have the same conductivity type, for example, in Figure 11 All examples are n-type. Furthermore, the first transistor 1114 and the first diode-connected transistor 1102 have the same conductivity type, the second transistor 1116 and the second diode-connected transistor 1104 have the same conductivity type, and the third transistor 1118 and the third diode-connected transistor 1106 have the same conductivity type.

[0121] Components of the bias supply circuit 1100 are coupled between a first supply voltage (e.g., supply voltage VDD) and a second supply voltage (e.g., ground). For example, impedance element 1112 has a first terminal connected to the supply voltage VDD and a second terminal connected to the first source / drain terminal of diode-connected transistor 1106, which is also connected to the gate terminal of diode-connected transistor 1106; the second source / drain terminal of diode-connected transistor 1106 is connected to the first terminal of impedance element 1110 at a common node A2, which presents a first voltage VDD. A2 Impedance element 1110 further has a second terminal connected to the first source / drain terminal of diode-connected transistor 1104, which is also connected to the gate terminal of diode-connected transistor 1104; the second source / drain terminal of the second diode-connected transistor 1104 is connected to the first terminal of impedance element 1108 at a common node A1, which presents a second voltage V. A1Impedance element 1108 further has a second terminal connected to the first source / drain terminal of diode-connected transistor 1102, which is also connected to the gate terminal of diode-connected transistor 1102; and the second source / drain terminal of diode-connected transistor 1102 is grounded. Furthermore, the gate terminal of transistor 1118 is connected to the gate terminal of diode-connected transistor 1106, wherein the first and second source / drain terminals of transistor 1118 are respectively connected to the power supply voltage VDD and a common node B2, which presents a third voltage VDD. B2 The gate of transistor 1116 is connected to the gate of diode-connected transistor 1104. The first and second source / drain terminals of transistor 1116 are connected to common node B2 and common node B1, respectively. Common node B1 presents a fourth voltage V. B1 Furthermore, the gate terminal of transistor 1114 is connected to the gate terminal of diode-connected transistor 1102, wherein the first and second source / drain terminals of transistor 1114 are connected to common node B1 and ground, respectively.

[0122] In some embodiments, transistor 1114 and diode-connected transistor 1102 can be used together as a current mirror, transistor 1116 and diode-connected transistor 1104 can be used together as another current mirror, and transistor 1118 and diode-connected transistor 1108 can be used together as yet another current mirror. Since impedance elements 1108, 1110, and 1112 have the same resistance value or other impedances, the voltage V... A1 (Sometimes referred to as the reference voltage) can be approximately 1 / 3 of the supply voltage VDD, and the voltage V A2 (Sometimes referred to as another reference voltage) can be approximately twice the supply voltage VDD (1 / 3 of which is 2). Furthermore, since transistor 1114 and diode-connected transistor 1102 have the same threshold voltage, transistor 1116 and diode-connected transistor 1104 have the same threshold voltage, and transistor 1118 and diode-connected transistor 1106 have the same threshold voltage, therefore the voltage VDD... B1 (Sometimes referred to as bias voltage) can be compared with (reference voltage) V A1 They are essentially similar. That is, V A1 ≈V B1 ≈VDD / 3. Similarly, the voltage V B2 (Sometimes referred to as another bias voltage) can be compared with (reference) voltage V. A2 They are essentially similar. That is, V A2 ≈V B2 ≈2×VDD / 3.

[0123] In some embodiments, diode-connected transistor 1102 and impedance element 1108 are used as a first reference portion coupled to a first drive portion formed by transistor 1114; diode-connected transistor 1104 and impedance element 1110 are used as a second reference portion coupled to a second drive portion formed by transistor 1116; and diode-connected transistor 1106 and impedance element 1112 are used as a third reference portion coupled to a third drive portion formed by transistor 1118. Since the first to third reference portions are substantially similar to each other, the voltage difference between the power supply voltage VDD and ground can be equally divided into three units, each unit being equal to 1 / 3 times the power supply voltage VDD. Furthermore, the first reference portion provides one unit of 1 / 3 times the power supply voltage VDD at a common node A1, and the first and second reference portions provide two units of 1 / 3 times VDD at a common node A2.

[0124] See next Figure 12 ,Apart from Figure 11 In addition to the components shown (diodes connected to transistors 1102, 1104, 1106, impedance elements 1108, 1110, 1112, transistors 1114, 1116, 1118), the bias supply circuit 1200 includes transistors 1202, 1204, 1206, and 1208. The gate terminal of transistor 1202 can be connected to the corresponding gate terminals of transistors 1118 and 1106. The gate terminal of transistor 1204 can be connected to the corresponding gate terminals of transistors 1116 and 1104. The corresponding gate terminals of transistors 1206 and 1208 are interconnected and can be used as current mirrors. In some embodiments, transistors 1202 and 1204 have the same conductivity type as transistors 1106 and 1118 (e.g., n-type), while transistors 1206 and 1208 have the opposite conductivity type (e.g., p-type). In some embodiments, the bias supply circuit 1200 may provide a voltage at least equal to the reference voltage V at a common node between transistors 1204 and 1208. A1 Or bias voltage V B1 The bias voltage is 1 / 3 of the power supply voltage VDD.

[0125] See next Figure 13 ,Apart from Figure 11In addition to the components shown (diodes connected to transistors 1102, 1104, 1106, impedance elements 1108, 1110, 1112, transistors 1114, 1116, 1118), the bias supply circuit 1300 includes transistors 1302, 1304, 1306, 1308, 1310, 1312, 1314, 1316, 1318, and 1320. The gates of transistors 1302 and 1304 are interconnected and can be used as current mirrors. The gate of transistor 1308 can be connected to the corresponding gate of transistors 1118 and 1106. The gates of transistors 1306 and 1310 can be connected to the corresponding gates of transistors 1106 and 1118, respectively. The gate of transistor 1312 can be connected to the corresponding gate of transistors 1104 and 1116. The gates of transistors 1314 and 1316 are interconnected and can be used as another current mirror. The gate of transistor 1318 can be connected to the corresponding gate of transistors 1102 and 1114. The gate of transistor 1320 can be connected to the common node between transistors 1316 and 1318. In some embodiments, transistors 1306, 1312, 1318, and 1320 have the same conductivity type (e.g., n-type) as transistors 1106 and 1118, while transistors 1302, 1304, 1308, 1310, 1314, and 1316 have the opposite conductivity type (e.g., p-type). In some embodiments, the bias supply circuit 1300 can provide a voltage at least equal to the reference voltage V at the common node between transistors 1310 and 1320. A1 Or bias voltage V B1 The bias voltage is 1 / 3 of the power supply voltage VDD.

[0126] See next Figure 14 ,Apart from Figure 11 In addition to the components shown (diodes connected to transistors 1102, 11104, 1106, impedance elements 1108, 1110, 1112, transistors 1114, 1116, 1118), the bias supply circuit 1400 includes transistors 1402, 1404, 1406, and 1408. The gate terminal of transistor 1402 can be connected to the corresponding gate terminals of transistors 1118 and 1106. The gate terminal of transistor 1408 can be connected to the corresponding gate terminals of transistors 1116 and 1104. The corresponding gate terminals of transistors 1404 and 1406 are interconnected and can be used as current mirrors. In some embodiments, transistor 1402 has the same conductivity type as transistors 1106 and 1118 (e.g., n-type), while transistors 1404, 1406, and 1408 have the opposite conductivity type (e.g., p-type). In some embodiments, the bias supply circuit 1400 may provide a voltage at least equal to the reference voltage V at a common node between transistors 1402 and 1406. A2Or bias voltage V B2 The bias voltage is 1 / 3 times 2 times the power supply voltage VDD.

[0127] See next Figure 15 ,Apart from Figure 11 In addition to the components shown (diodes connected to transistors 1102, 1104, 1106, impedance elements 1108, 1110, 1112, transistors 1114, 1116, 1118), the bias supply circuit 1500 includes transistors 1502, 1504, 1506, 1508, 1510, 1512, 1514, 1516, 1518, and 1520. The gates of transistors 1502 and 1504 are interconnected and can be used as current mirrors. The gate of transistor 1506 can be connected to the corresponding gate of transistors 1118 and 1106. The gate of transistor 1516 can be connected to the common node between transistors 1504 and 1506. The corresponding gates of transistors 1508 and 1510 are interconnected and can be used as current mirrors. The gate of transistor 1512 can be connected to the corresponding gate of transistors 1116 and 1104. The gate terminal of transistor 1518 can be connected to the corresponding gate terminals of transistors 1116 and 1104. The gate terminal of transistor 1514 can be connected to the corresponding gate terminals of transistors 1114 and 1102. The gate terminal of transistor 1520 can be connected to the common node between transistors 1512 and 1514. In some embodiments, transistors 1506, 1514, 1518, and 1520 have the same conductivity type (e.g., n-type) as transistors 1106 and 1118, while transistors 1502, 1504, 1508, 1510, and 1516 have the opposite conductivity type (e.g., p-type). In some embodiments, the bias supply circuit 1500 can provide a voltage at least equal to the reference voltage V at the common node between transistors 1516 and 1518. A2 Or bias voltage V B2 The bias voltage is 1 / 3 times 2 times the power supply voltage VDD.

[0128] Figure 16 An example circuit diagram of a bias supply circuit 1700 according to some embodiments is shown. The bias supply circuit 1700 is coupled between the power supply voltage VDD and ground. Furthermore, Figure 16 The bias supply circuit 1700 and Figure 1 The bias supply circuit 100 shown is substantially similar, except that the bias supply circuit 1700 includes N reference sections and N drive / bias sections, where N can be equal to or greater than 3. Therefore, the bias supply circuit 1700 can provide voltages that are multiple fractional multiples of the power supply voltage difference VDD, each fractional multiple being a multiple of 1 / N of the power supply voltage VDD.

[0129] For example, the bias supply circuit 1700 includes N bias sections 1710_1, 1710_2, ..., 1710_N, and corresponding drive / bias sections 1720_1, 1720_2, ..., 1720_N. (This is related to the bias supply circuit 100...) Figure 1 Similarly, each of the reference portions 1710_1 to 1710_N includes an impedance element and a diode-connected transistor, and each of the drive / bias portions 1720_1 to 1720_N includes a transistor having a threshold voltage similar to that of the corresponding diode-connected transistor. Furthermore, the diode-connected transistors of these N reference portions may have the same conductivity type (e.g., n-type) as the transistors of the N drive portions. Therefore, as... Figure 16 As shown, various fractional voltages, such as 1 / N, 2 / N, ..., (N-1) / N times the power supply voltage VDD, can be provided at the common node between adjacent drive / bias sections.

[0130] Figure 17 An example circuit diagram of a bias supply circuit 1800 according to some embodiments is shown. The bias supply circuit 1800 is coupled between the power supply voltage VDD and ground. Furthermore, Figure 17 The bias supply circuit 1800 and Figure 2 The bias supply circuit 200 shown is substantially similar, except that the bias supply circuit 1800 includes N reference sections and N drive sections, where N can be equal to or greater than 3. Therefore, the bias supply circuit 1800 can provide voltages that are multiple fractional multiples of the power supply voltage difference VDD, each fractional multiple being a multiple of 1 / N of the power supply voltage VDD.

[0131] For example, the bias supply circuit 1800 includes N bias sections 1810_1, 1810_2, ..., 1810_N, and corresponding drive sections 1820_1, 1820_2, ..., 1820_N. This is related to the bias supply circuit 200 (…). Figure 2 Similarly, each of the bias sections 1810_1 to 1810_N includes an impedance element and a diode-connected transistor, and each pair of drive sections 1820_1 to 1820_N includes a p-type transistor and an n-type transistor. Furthermore, the diode-connected transistors in these N reference sections may have the same conductivity type (e.g., n-type). Therefore, as... Figure 17 As shown, various fractional voltages, such as 1 / N, 2 / N, ..., (N-1) / N times the power supply voltage VDD, can be provided at a common node between adjacent driving sections of transistors with opposite conductivity types.

[0132] Figure 18An example circuit diagram of a bias supply circuit 1900 according to some embodiments is shown. The bias supply circuit 1900 is coupled between the power supply voltage VDD and ground. Furthermore, Figure 18 The bias supply circuit 1900 and Figure 6 The bias supply circuit 600 shown is substantially similar, except that the bias supply circuit 1900 includes N reference sections and N drive / bias sections, where N can be equal to or greater than 3. Therefore, the bias supply circuit 1900 can provide voltages that are multiple fractional multiples of the supply voltage difference VDD, each fractional multiple being a multiple of 1 / N of the supply voltage VDD.

[0133] For example, the bias supply circuit 1900 includes N bias sections 1910_1, 1910_2, ..., 1910_N, and corresponding drive / bias sections 1920_1, 1920_2, ..., 1920_N. This is related to the bias supply circuit 600 (…). Figure 6 Similarly, each of the reference portions 1910_1 to 1910_N includes an impedance element and a diode-connected transistor, and each of the drive / bias portions 1920_1 to 1920_N includes a transistor having a threshold voltage similar to that of the corresponding diode-connected transistor. Furthermore, the diode-connected transistors of these N reference portions may have the same conductivity type (e.g., p-type) as the transistors of the N drive portions. Therefore, as... Figure 18 As shown, various fractional voltages, such as 1 / N, 2 / N, ..., (N-1) / N times the power supply voltage VDD, can be provided at the common node between adjacent drive / bias sections.

[0134] Figure 19 An example circuit diagram of a bias supply circuit 2000 according to some embodiments is shown. The bias supply circuit 2000 is coupled between the power supply voltage VDD and ground. Furthermore, Figure 19 The bias supply circuit 2000 and Figure 7 The bias supply circuit 700 shown is substantially similar, except that the bias supply circuit 2000 includes N reference sections and N drive sections, where N can be equal to or greater than 3. Therefore, the bias supply circuit 2000 can provide voltages that are multiple fractional multiples of the power supply voltage difference VDD, each fractional multiple being a multiple of 1 / N of the power supply voltage VDD.

[0135] For example, the bias supply circuit 2000 includes N bias sections 2010_1, 2010_2, ..., 2010_N, and corresponding drive sections 2020_1, 2020_2, ..., 2020_N. This is related to the bias supply circuit 700 (…). Figure 7Similarly, each of the bias sections 2010_1 to 2010_N includes an impedance element and a diode-connected transistor, and each pair of drive sections 2020_1 to 2020_N includes a p-type transistor and an n-type transistor. Furthermore, the diode-connected transistors in these N reference sections may have the same conductivity type (e.g., p-type). Therefore, as... Figure 19 As shown, various fractional voltages, such as 1 / N, 2 / N, ..., (N-1) / N times the power supply voltage VDD, can be provided at a common node between adjacent driving sections of transistors with opposite conductivity types.

[0136] Figure 20 A flowchart illustrating an exemplary method 2100 for forming a bias supply circuit according to some embodiments is shown. For example, the operation of method 2100 can be used to form... Figure 1 The bias supply circuit 100 shown includes, for example, a pair of diode-connected transistors, a pair of impedance elements, and a pair of (drive / bias) transistors. However, it should be noted that method 2100 is merely an example and is not intended to limit this disclosure. Therefore, it is possible to... Figure 20 Additional operations are provided before, during, and / or after Method 2100, and this document may only briefly describe some of these additional operations.

[0137] Method 2100 begins with operation 2110. In operation 2110, a first diode is formed connecting a transistor and a first transistor, wherein the gate terminals of the first diode and the first transistor are interconnected. Figure 1 As a representative example, the circuit diagram shows that a first diode-connected transistor (e.g., first diode-connected transistor 102) and a first transistor (e.g., first transistor 110) can be formed along the main surface of the substrate, an operation sometimes referred to as part of a front-end-of-line (FEOL) process. The gate, drain, and source terminals of transistors 102 and 110 can be formed along the main surface. Each of transistors 102 and 110 can be formed as at least one of the following structures: a gate-all-around (GAA) transistor, a complementary transistor, a FinFET, a planar transistor, etc.

[0138] Method 2100 continues to operation 2120. In operation 2120, a second diode is formed connecting the transistor and the second transistor, wherein the gate terminals of the second diode and the second transistor are interconnected. (Continued) Figure 1In the above examples, the second diode-connected transistor (e.g., second diode-connected transistor 104) and the second transistor (e.g., second transistor 112) can be formed along the main surface of the same substrate. According to various embodiments, the formation of transistors 104 and 112 can be part of a FEOL process. The gate, drain, and source terminals of transistors 104 and 112 can be formed along the main surface. Each of transistors 104 and 112 can be formed as at least one of the following structures: a gate-full-ring (GAA) transistor, a complementary transistor, a FinFET, a planar transistor, etc. Furthermore, according to various embodiments of this disclosure, transistors 102 and 104 can have the same conductivity type (e.g., formed from the same active region, or formed from active regions having the same conductivity type).

[0139] Method 2100 continues to operation 2130. In operation 2130, a first impedance element is formed coupled between a power supply voltage and the first source / drain terminals of a first diode-connected transistor, wherein the first source / drain terminals and the gate terminal of the first diode-connected transistor are interconnected. Continuing with the same example described above, the first impedance element may be implemented as a resistor (e.g., first impedance element 106). In some embodiments, resistor 106 may be formed as a metal or polysilicon resistor in one of a plurality of metallization layers above the main surface of the substrate; this operation is sometimes referred to as part of a middle-end-of-line (MEOL) process or a back-end-of-line (BEOL) process. Resistor 106 may have two terminals, one terminal electrically connected to the first source / drain terminal of transistor 102, and the other terminal electrically connected to a first power supply voltage VDD, which may be carried by a first interconnect structure formed via the BEOL process. In addition, transistor 110 may have a first source / drain terminal electrically connected to the first interconnect structure, and a second source / drain terminal electrically connected to the first source or drain terminal of transistor 112.

[0140] Method 2100 continues to operation 2140. In operation 2140, a second impedance element is formed coupled between the second source / drain terminal of the first diode-connected transistor and the first source / drain terminal of the second diode-connected transistor, wherein the second source / drain terminal and the gate terminal of the second diode-connected transistor are interconnected. Continuing the above example, the second impedance element may be implemented as a resistor (e.g., second impedance element 108). In some embodiments, resistor 108 may be formed as another metal or polysilicon resistor in one of a plurality of metallization layers above the main surface of the substrate. Resistor 108 may have two terminals, one terminal electrically connected to the second source / drain terminal of transistor 102, and the other terminal electrically connected to the first source / drain terminal of transistor 104. Furthermore, the second source / drain terminal of transistor 104 is electrically connected to a second power supply voltage (ground), which may be carried by a second interconnect structure formed via BEOL processing. Furthermore, transistor 112 may have a second source / drain terminal electrically connected to the second interconnect structure.

[0141] In one embodiment of this disclosure, a bias supply circuit is provided. The bias supply circuit includes a first diode-connected transistor, a second diode-connected transistor, a first impedance element, a second impedance element, a first transistor, and a second transistor. The first impedance element is connected between the first source / drain terminal of the first diode-connected transistor and a first power supply voltage. The gate terminal of the first diode-connected transistor and the gate terminal of the first transistor are interconnected. The second impedance element is connected between the second source / drain terminal of the first diode-connected transistor and the first source / drain terminal of the second diode-connected transistor. The second source / drain terminal of the second diode-connected transistor is coupled to a second power supply voltage. The gate terminal of the second diode-connected transistor and the gate terminal of the second transistor are interconnected. The first diode-connected transistor and the second diode-connected transistor have a first conductivity type.

[0142] In some embodiments of the bias supply circuit of this type, the second impedance element and the first diode are connected to the second source / drain terminals of the transistor and are connected together to a first node presenting a first voltage, and the first transistor and the second transistor are connected together to a second node presenting a second voltage.

[0143] In some embodiments of the bias supply circuit of this state, the first voltage and the second voltage are each equal to a fraction of a multiple of the first power supply voltage.

[0144] In some embodiments of the bias supply circuit of this type, the second diode connects the second source / drain terminals of the transistor directly to the second power supply voltage. This fractional multiple is equal to 1 / 2 times.

[0145] In some embodiments of this type of bias supply circuit, the bias supply circuit further includes a third diode-connected transistor, a third impedance element, and a third transistor. The third impedance element is connected between the second source / drain terminals of the second diode-connected transistor and the first source / drain terminals of the third diode-connected transistor. The second source / drain terminal of the third diode-connected transistor is directly connected to a second power supply voltage. The gate terminals of the third diode-connected transistor and the third transistor are interconnected. The third diode-connected transistor has a first conductivity type.

[0146] In some embodiments of this bias-providing circuit, the second impedance element and the first diode are connected to the second source / drain terminals of the transistor, which are together connected to a first node presenting a first voltage. The first transistor and the second transistor are together connected to a second node presenting the first voltage. The third impedance element and the second diode are connected to the second source / drain terminals of the transistor, which are together connected to a third node presenting a second voltage. The second transistor and the third transistor are together connected to a fourth node presenting the second voltage.

[0147] In some embodiments of the bias supply circuit of this state, the first voltage is equal to 2 / 3 times the first supply voltage, and the second voltage is equal to 1 / 3 times the first supply voltage.

[0148] In some embodiments of this type of bias supply circuit, the bias supply circuit further includes a third transistor and a current mirror. A first diode connects the gate of the first transistor, and the gates of the third transistor are interconnected. The current mirror is used to couple the first and third transistors to a first power supply voltage or a second power supply voltage.

[0149] In some embodiments of the bias supply circuit of this type, the current mirror includes a pair of transistors having a second conductivity type.

[0150] In some embodiments of this type of bias supply circuit, the first diode-connected transistor is substantially similar to the second diode-connected transistor.

[0151] In some embodiments of this type of bias supply circuit, the first impedance element includes a first resistor, and the second impedance element includes a second resistor. The first resistor and the second resistor have the same resistance value.

[0152] In another embodiment of this disclosure, a bias voltage providing circuit is provided. The bias voltage providing circuit includes a first reference portion, a second reference portion, a first driving portion, and a second driving portion. The first reference portion and the second reference portion are interconnected and coupled between a power supply voltage and ground. The first driving portion and the second driving portion are coupled to the first reference portion and the second reference portion, respectively. The first reference portion includes a first diode-connected transistor and a first resistor; the second reference portion includes a second diode-connected transistor and a second resistor; the first driving portion includes a first transistor; and the second driving portion includes a second transistor. The first diode-connected transistor, the second diode-connected transistor, and the first transistor have a first conductivity type, and the second transistor has a second conductivity type opposite to the first conductivity type.

[0153] In some embodiments of this alternative bias supply circuit, a first reference portion and a second reference portion are jointly connected to a first node presenting a first voltage, and a first transistor and a second transistor are jointly connected to a second node presenting a second voltage.

[0154] In some embodiments of this alternative bias supply circuit, the first voltage and the second voltage are each equal to a fraction of the supply voltage.

[0155] In some embodiments of this alternative bias supply circuit, the fractional multiple is equal to 1 / 2, 1 / 3, 2 / 3, 1 / 4, or 3 / 4.

[0156] In some embodiments of this alternative bias supply circuit, the bias supply circuit further includes a third transistor and a fourth transistor. The third transistor is connected between the first reference portion and the first drive portion, and the third transistor has a first conductivity type. The fourth transistor is coupled between the second reference portion and the second drive portion, and the fourth transistor has a second conductivity type.

[0157] In some embodiments of this alternative bias supply circuit, the second transistor and the fourth transistor form a current mirror.

[0158] In some embodiments of this alternative bias supply circuit, the first resistor and the second resistor have the same resistance value.

[0159] In another embodiment of this disclosure, a method for forming a bias supply circuit is provided. The method includes the following steps: forming a first diode-connected transistor and a first transistor, wherein the gate terminal of the first diode-connected transistor and a gate terminal of the first transistor are interconnected; forming a second diode-connected transistor and a second transistor, wherein the gate terminals of the second diode-connected transistor and the gate terminals of the second transistor are interconnected; forming a first impedance element coupled between a power supply voltage and a first source / drain terminal of the first diode-connected transistor, wherein the first source / drain terminal of the first diode-connected transistor and the gate terminal of the first diode-connected transistor are interconnected; and forming a second impedance element coupled between a second source / drain terminal of the first diode-connected transistor and a first source / drain terminal of the second diode-connected transistor, wherein the second source / drain terminal is interconnected with the gate terminal of the second diode-connected transistor. The first diode-connected transistor and the second diode-connected transistor have the same conductivity type.

[0160] In some embodiments of this alternative method, the first diode connects the second source / drain terminal of the transistor and one end of the second impedance element to a node presenting a voltage equal to a fraction of the supply voltage.

[0161] In another embodiment of this disclosure, a bias supply circuit is provided. The bias supply circuit includes a first transistor, a second transistor, a first diode-connected transistor, a second diode-connected transistor, a first impedance element, and a second impedance element. The gate terminals of the first diode-connected transistor and the first transistor are interconnected. The gate terminals of the second diode-connected transistor and the second transistor are interconnected. The first impedance element is coupled between a power supply voltage and the first source / drain terminals of the first diode-connected transistor. The second impedance element is coupled between the second source / drain terminals of the first diode-connected transistor and the first source / drain terminals of the second diode-connected transistor. The first source / drain terminals and the gate terminals of the first diode-connected transistor are interconnected, and the second source / drain terminals and the gate terminals of the second diode-connected transistor are interconnected. The second source / drain terminal of the first diode-connected transistor and the second impedance element are connected to a node that presents a voltage equal to a fraction of the power supply voltage. The first diode-connected transistor and the second diode-connected transistor have the same conductivity type.

[0162] As used herein, the terms “about” and “approximately” generally indicate the value of a given quantity that may vary based on a particular technology node associated with the subject semiconductor device. Based on a particular technology node, the term “about” may indicate the value of a given quantity that varies from, for example, 10% to 30% of the value (e.g., +10%, ±20%, or ±30% of the value).

[0163] The foregoing outlines features of several embodiments to enable those skilled in the art to better understand the various aspects of this disclosure. Those skilled in the art should understand that they can at any time design or modify other programs and structures based on the content of this disclosure to achieve the same purpose and / or attain the same advantages of the embodiments described herein. Those skilled in the art should also recognize that such equivalent structures do not depart from the spirit and scope of this disclosure, and various changes, substitutions, and modifications can be made to this document without departing from the spirit and scope of this disclosure.

Claims

1. A bias voltage supply circuit, characterized in that, Include: A first diode is connected to a transistor; A first impedance element is connected between a first source / drain terminal of the first diode-connected transistor and a first power supply voltage; A first transistor, wherein the first diode is connected to a gate terminal of the transistor and the gate terminal of the first transistor are connected to each other; A second diode is connected to a transistor; A second impedance element is connected between a second source / drain terminal of the first diode-connected transistor and a first source / drain terminal of the second diode-connected transistor, wherein the second source / drain terminal of the second diode-connected transistor is coupled to a second power supply voltage; and A second transistor, wherein the second diode is connected to a gate terminal of the transistor and the gate terminal of the second transistor are connected to each other; The first diode-connected transistor and the second diode-connected transistor have a first conductivity type.

2. The bias supply circuit as described in claim 1, characterized in that, The second impedance element and the second source / drain terminals of the first diode are connected together to a first node presenting a first voltage, and the first transistor and the second transistor are connected together to a second node presenting a second voltage.

3. The bias supply circuit as described in claim 2, characterized in that, The first voltage and the second voltage are each equal to a fraction of the first power supply voltage.

4. The bias supply circuit as described in claim 1, characterized in that, Further includes: A third diode is connected to a transistor; A third impedance element is connected between the second source / drain terminal of the second diode-connected transistor and a first source / drain terminal of the third diode-connected transistor, wherein the second source / drain terminal of the third diode-connected transistor is directly connected to the second power supply voltage; and A third transistor, wherein a third diode is connected to a gate terminal of the transistor and a gate terminal of the third transistor are connected to each other; The third diode connected to the transistor has the first conductivity type.

5. The bias supply circuit as described in claim 4, characterized in that, The second impedance element and the first diode are connected to the second source / drain terminals of the transistor, which are together connected to a first node presenting a first voltage. The first transistor and the second transistor are also together connected to a second node presenting the first voltage. The third impedance element and the second diode are connected to the second source / drain terminals of the transistor and are connected to a third node that presents a second voltage. The second transistor and the third transistor are connected to a fourth node that presents the second voltage.

6. The bias supply circuit as described in claim 1, characterized in that, Further includes: A third transistor, wherein the first diode is connected to the gate terminal of the first transistor, and the gate terminal of the first transistor and the gate terminal of the third transistor are interconnected; and A current mirror is used to couple the first transistor and the third transistor to the first power supply voltage or the second power supply voltage.

7. The bias supply circuit as described in claim 6, characterized in that, The current mirror contains a pair of transistors having a second conductivity type.

8. The bias supply circuit as described in claim 1, characterized in that, The first impedance element includes a first resistor, the second impedance element includes a second resistor, and the first resistor and the second resistor have the same resistance value.

9. A bias voltage supply circuit, characterized in that, Include: A first reference portion and a second reference portion are interconnected and coupled between a power supply voltage and a ground; and A first driving portion and a second driving portion are respectively coupled to the first reference portion and the second reference portion; The first reference portion includes a first diode connected to a transistor and a first resistor; the second reference portion includes a second diode connected to a transistor and a second resistor; the first driving portion includes a first transistor; and the second driving portion includes a second transistor. The first diode-connected transistor, the second diode-connected transistor, and the first transistor have a first conductivity type, and the second transistor has a second conductivity type opposite to the first conductivity type.

10. A bias voltage supply circuit, characterized in that, Include: The first transistor; A second transistor; A first diode is connected to a transistor, wherein a gate terminal of the first diode is connected to a gate terminal of the first transistor and the gate terminal of the first transistor are connected to each other; A second diode is connected to a transistor, wherein a gate terminal of the second diode is connected to a gate terminal of the second transistor and the gate terminal of the second transistor are connected to each other; A first impedance element is coupled between a power supply voltage and a first source / drain terminal of the transistor connected to the first diode; as well as A second impedance element is coupled between a second source / drain terminal of the first diode-connected transistor and a first source / drain terminal of the second diode-connected transistor. The first diode is connected to the first source / drain terminal of the transistor and the gate terminal of the transistor, and the second source / drain terminal is connected to the gate terminal of the transistor. The first diode connects the second source / drain terminals of the transistor to a node with the second impedance element. This node is used to present a voltage equal to a fraction of the power supply voltage. The first diode-connected transistor and the second diode-connected transistor have the same conductivity type.

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