power module

Abstract

The application discloses a power module. The module comprises: a three-phase rectifier bridge, a chopper circuit and a three-phase full bridge, the three-phase rectifier bridge is used for rectifying input three-phase alternating current into direct current, the chopper circuit is used for eliminating power surge, and the three-phase full bridge is used for converting the rectified direct current into three-phase alternating current output; and a backing plate, semiconductor devices of the three-phase rectifier bridge, semiconductor devices of the chopper circuit and semiconductor devices of the three-phase full bridge are arranged on the backing plate in an arch-shaped base island layout structure. The arch-shaped structure bears different circuit topology chips, optimizes the heat dissipation path, and thus solves the technical problem of high temperature of the power module in the related art; the scheme further matches the three-phase rectifier bridge, the chopper and the three-phase full bridge through the design of multiple bridge type bonding wire connection modes, connects equal potentials in an integrated circuit in series through the bonding wire, compactly designs a current transmission path, and reduces parasitic resistance and parasitic inductance of the power module.

Description

Technical Field

[0001] This application relates to the field of power electronics technology, and more specifically, to a power module. Background Technology

[0002] In fields such as commercial air conditioning controllers and industrial frequency converters, the Econo PIM2 package has become the industry standard for 1200V / 50A power modules (such as FP50R12KT4_B11, 7MBR50VM120-50, etc.).

[0003] These power modules use a centralized chip layout and linear bonding wires, which leads to excessively high temperatures: 1) The power chips of the rectifier / inverter bridge are densely arranged, resulting in localized heat accumulation; 2) Thermal imaging shows that when running at full load, the temperature difference between chips reaches more than 40°C, causing thermal stress to concentrate in the central area, which will accelerate the aging of the bonding wires and shorten the life of the entire module by about 30% compared to the theoretical value.

[0004] There is currently no effective solution to the above problems. Utility Model Content

[0005] This application provides a power module to at least solve the technical problem of high temperature in power modules in related technologies.

[0006] According to one aspect of the embodiments of this application, a power module is provided, including: a three-phase rectifier bridge, a chopper circuit, and a three-phase full bridge. The three-phase rectifier bridge is used to rectify the input three-phase alternating current into direct current. The chopper circuit is used to eliminate power surges. The three-phase full bridge is used to convert the rectified direct current into three-phase alternating current for output. A substrate is provided, and the semiconductor devices of the three-phase rectifier bridge, the chopper circuit, and the three-phase full bridge are arranged on the substrate in an arc-shaped base island layout structure.

[0007] Optionally, the substrate consists of two independent substrates, namely a first substrate and a second substrate, wherein the semiconductor devices of the three-phase rectifier bridge, the semiconductor devices of the chopper circuit, and the semiconductor devices of the three-phase full bridge are respectively integrated on the two substrates using bow-shaped base islands.

[0008] Optionally, two bow-shaped base islands are formed on the first liner, and one bow-shaped base island is formed on the second liner.

[0009] Optionally, the three-phase rectifier bridge includes six diodes, the chopper circuit includes one diode and one IGBT, the three-phase full bridge includes six FRDs and six IGBTs, the six diodes of the three-phase rectifier bridge, one diode and one IGBT of the chopper circuit, and a portion of the semiconductor devices of the three-phase full bridge are integrated on the first substrate, and another portion of the semiconductor devices of the three-phase full bridge are integrated on the second substrate.

[0010] Optionally, the first arch-shaped base island on the first liner carries the three common cathode diodes of the three-phase rectifier bridge, the second arch-shaped base island carries the diodes of the chopper circuit, and the FRD and IGBT of the upper U-phase bridge arm of the three-phase full bridge.

[0011] Optionally, the third arched base island on the second liner carries the FRD and IGBT of the V-phase and W-phase upper arms of the three-phase full bridge.

[0012] Optionally, the first liner and the second liner have the same area.

[0013] Optionally, the three-phase rectifier bridge and the three-phase full bridge employ bridge-type bonding wires. Multiple bridge-type bonding wires are used to match the three circuit topologies of the three-phase rectifier bridge, the chopper circuit, and the three-phase full bridge, shortening the output current transmission path of the three-phase full bridge and the input current transmission path of the three-phase rectifier bridge. By using bridge-type bonding wires to connect the three bridge arms at the same potential in the circuit, the shortest current transmission path is achieved, saving copper layer space on the substrate, achieving a compact connection in height space, and reducing parasitic inductance and parasitic resistance.

[0014] Optionally, the gate bonding wire is made of aluminum wire with a diameter of 8 mil, and the other bonding wires are made of aluminum wire with a diameter of 15 mil. Alternatively, the gate bonding wire is made of aluminum wire with a diameter of 8 mil, and the other bonding wires are made of aluminum wire with a diameter of 12 mil.

[0015] In this embodiment, the power module includes a three-phase rectifier bridge, a chopper circuit, and a three-phase full-bridge. The three-phase rectifier bridge rectifies the input three-phase AC power into DC power, the chopper circuit eliminates power surges, and the three-phase full-bridge converts the rectified DC power into a three-phase AC power output. A substrate is provided on which the semiconductor devices of the three-phase rectifier bridge, the chopper circuit, and the three-phase full-bridge are arranged in an arc-shaped island layout. This arc-shaped structure supports chips with different circuit topologies, optimizing the heat dissipation path and thus solving the technical problem of high temperature in power modules in related technologies. Furthermore, this solution uses multiple bridge-type bonding wire connections to match the three circuit topologies of the three-phase rectifier bridge, chopper circuit, and three-phase full-bridge. Bonding wires connect equal potentials in the integrated circuit in series, compactly designing the current transmission path and reducing the parasitic resistance and inductance of the power module. Attached Figure Description

[0016] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0017] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] One or more embodiments are illustrated by way of example with reference numerals in the accompanying drawings. These illustrations do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are denoted as similar elements. Unless otherwise stated, the figures in the drawings are not to be limited by scale.

[0019] Figure 1 This is a schematic diagram of an optional power module in related technologies;

[0020] Figure 2 This is a schematic diagram of an optional power module according to an embodiment of this application;

[0021] Figure 3 This is a schematic diagram of an optional power module pinout according to an embodiment of this application;

[0022] Figure 4 This is a schematic diagram of an optional power module pinout according to an embodiment of this application;

[0023] Figure 5 This is a schematic diagram of an optional power module pinout according to an embodiment of this application;

[0024] Figure 6 This is a schematic diagram of an optional power module according to an embodiment of this application;

[0025] Figure 7 This is a schematic diagram of an optional power module liner layout according to an embodiment of this application;

[0026] Figure 8 This is a schematic diagram of an optional power module according to an embodiment of this application;

[0027] Figure 9 This is a schematic diagram of an optional power module according to an embodiment of this application;

[0028] Figure 10 This is a schematic diagram of an optional power module according to an embodiment of this application;

[0029] In the diagram (it should be noted that...), Figure 3 , Figure 4 , Figure 5 , Figure 10 The numbers in the diagram represent pin numbers (the word "pin" is omitted in the diagram): 1-Rivet ring, 2-PIM2 package side frame, 3-Substrate, 4-Pin pin, 5-Left side liner, 5_1-Arch-shaped base island A, 5_2-Arch-shaped base island B, 6-Gate bonding wire, 7-Bonding wire, 7_1-Bridge bonding wire A, 7_2-Bridge bonding wire B, 8-Chip, 8_1-Chopper circuit IGBT, 8_2-Chopper circuit diode, 8_3-Three-phase full-bridge IGBT, 8_4-Three-phase full-bridge FRD, 8_5-Three-phase rectifier bridge power frequency diode, 9-Right side liner, 9_1-Arch-shaped base island C, 10-Temperature sensing resistor NTC, 11-PIM2 package cover plate;

[0030] Pin 1 - Rectifier bridge R-phase pin, Pin 2 - Rectifier bridge S-phase pin, Pin 3 - Rectifier bridge T-phase pin, Pin 4 - Inverter full-bridge U-phase upper arm control pin, Pin 5 - Inverter full-bridge U-phase pin, Pin 6 - Inverter full-bridge V-phase upper arm control pin, Pin 7 - Inverter full-bridge V-phase pin, Pin 8 - Inverter full-bridge W-phase upper arm control pin, Pin 9 - Inverter full-bridge W-phase pin, Pin 10 - NTC pin, Pin 11 - NTC pin, Pin 12 - Inverter full-bridge W-phase lower bridge arm control pin, pin 13-inverter full bridge V-phase lower bridge arm control pin, pin 14-N lead-out pin, pin 15-inverter full bridge U-phase lower bridge arm control pin, pin 16-chopper control pin, pin 17-DC bus circuit lead-out pin, pin 18-DC bus circuit input pin, pin 19-chopper output lead-out pin, pin 20-rectifier bridge P pin, pin 21-rectifier bridge P pin, pin 22-rectifier bridge N pin, pin 23-rectifier bridge N pin. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0032] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0033] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0034] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0035] Furthermore, terms such as "horizontal," "vertical," and "sag" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal relative to "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0036] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0037] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0038] like Figure 1 As shown, the Econo PIM2 package is a common package form for power conversion modules in commercial air conditioner controllers. Its output pin definitions are consistent, representing a 1200V 50A Si-based semiconductor power module. To ensure compatibility with existing market modules and reduce module usage costs and client-side secondary development complexity, the integrated power module in this application can utilize the same pin definitions. By designing the substrate layout and bonding wire connection method of the integrated power module, a more compact and concise circuit connection structure is provided, matching existing low-cost domestic silicon-based chips, thereby obtaining a lower-cost integrated power module.

[0039] like Figure 2 As shown, this application is an integrated power module based on PIM2 packaging design that includes three circuit topologies: a three-phase rectifier bridge, a chopper circuit, and a three-phase full bridge. It uses an arc-shaped structure to carry chips with different circuit topologies, optimizes the heat dissipation path, and can solve the technical problem of high temperature of power modules in related technologies. The power module of this application includes: a three-phase rectifier bridge, a chopper circuit, and a three-phase full bridge.

[0040] A three-phase rectifier bridge consists of six diodes (8_5) and is mainly used to convert three-phase AC power from the grid or other energy input terminals into DC power.

[0041] The chopper circuit consists of a diode 8_2 and an IGBT (Insulated Gate Bipolar Transistor) 8_1. It is mainly used to consume electrical energy in a timely manner when the motor regenerates energy, so as to avoid power surges that could cause chip failure due to overvoltage and overcurrent.

[0042] The three-phase full-bridge converter consists of six FRD (Fast Recovery Diode) 8_4 modules and six IGBT 8_3 modules. It is mainly used to convert rectified DC power into three-phase AC power for motor drive.

[0043] The semiconductor devices of the three-phase rectifier bridge, the semiconductor devices of the chopper circuit, and the semiconductor devices of the three-phase full bridge are arranged on the substrate in an arc-shaped base island layout.

[0044] In an optional embodiment, there are two substrates, namely a first substrate 5 and a second substrate 9, which are independently arranged and have equal areas. The semiconductor devices of the three-phase rectifier bridge, the semiconductor devices of the chopper circuit, and the semiconductor devices of the three-phase full bridge are integrated on the two substrates using bow-shaped base islands.

[0045] For example, six diodes of the three-phase rectifier bridge, one diode and one IGBT of the chopper circuit, and a portion of the semiconductor devices of the three-phase full bridge are integrated on the first substrate, thereby forming two arc-shaped base islands on the first substrate; another portion of the semiconductor devices of the three-phase full bridge are integrated on the second substrate, thereby forming an arc-shaped base island on the second substrate.

[0046] The first arch-shaped base island on the first liner carries the three common cathode diodes of the three-phase rectifier bridge, the second arch-shaped base island carries the diodes of the chopper circuit, and the FRD and IGBT of the upper arm of the U phase of the three-phase full bridge; the third arch-shaped base island on the second liner carries the FRD and IGBT of the upper arms of the V and W phases of the three-phase full bridge.

[0047] During bonding, the gate bonding wire uses aluminum wire with a diameter of 8 mil, and the other bonding wires use aluminum wire with a diameter of 15 mil; the gate bonding wire can also use aluminum wire with a diameter of 8 mil, while the other bonding wires use aluminum wire with a diameter of 12 mil.

[0048] In the technical solution of this application, 1) from the perspective of electrical influence, by designing the substrate layout structure and bonding wire connection method of the integrated power module, the parasitic inductance and resistance problems caused by the line connection are reduced compared with the traditional circuit built with multiple dispersed components; 2) from the perspective of thermal influence, by dispersing the chip positions and adopting multiple irregular bow-shaped substrate islands and bridge-type bonding wire connection method, the heat dissipation path is further optimized, ensuring the uniform distribution of heat inside the module and avoiding local chip overheating, thereby improving the reliability and service life of the module.

[0049] As an optional embodiment, the technical solution of this application is further described in detail below with reference to specific embodiments:

[0050] As attached Figures 2 to 8 Option 1 Figures 9 to 10 The diagram shows Scheme 2, which includes: 1-Compression ring, 2-PIM2 package side frame, 3-Substrate, 4-Pin pin, 5-Left side liner (i.e., first liner), 5_1-First bow-shaped base island (i.e., first bow-shaped base island), 5_2-Second bow-shaped base island (i.e., second bow-shaped base island), 6-Gate bonding wire (can use aluminum wire with a diameter of 8mil or 5mil), 7-Bonding wire (can use aluminum wire with a diameter of 15mil), 7_1-Bridge bonding wire A, 7_2-Bridge bonding wire B, 8-Chip, 8_1-IGBT chopper circuit, 8_2-Chopper circuit diode, 8_3-Three-phase full-bridge IGBT, 8_4-Three-phase full-bridge FRD, 8_5-Three-phase rectifier bridge power frequency diode, 9-Right side liner (i.e., second liner), 9_1-Third bow-shaped base island (i.e., third bow-shaped base island), 10-NTC (temperature sensing resistor).

[0051] In Scheme 1, aluminum wires with diameters of 8 mil and 15 mil are used for bonding, with the gate bonding wire being an 8 mil diameter aluminum wire and the other bonding wires being 15 mil diameter. In Scheme 2, aluminum wires with diameters of 8 mil and 12 mil are used for bonding, with the gate bonding wire being an 8 mil diameter aluminum wire and the other bonding wires being 12 mil diameter.

[0052] In the above schemes, considering that the bonding process in Scheme 2 takes longer than that in Scheme 1, the design of Scheme 1 is preferred.

[0053] The power module of this application includes two substrates. The substrates have a three-layer structure, with the upper and lower layers being copper-clad layers and the middle layer being a ceramic layer. AMB (Active Metal Brazing) ceramic substrates or DBC (Direct Bond Copper) ceramic substrates can be used. To reduce the cost of use, DBC is preferred.

[0054] The left-side substrate 5 mainly comprises a three-phase rectifier bridge section and a chopper section. The three-phase rectifier bridge section consists of six 1200V 50A three-phase rectifier bridge power frequency diodes 8_5, and the chopper section consists of one 1200V 25A chopper circuit IGBT 8_1 and one 1200V 15A chopper circuit diode 8_2. The right-side substrate 8 mainly comprises a three-phase full-bridge section, consisting of six 1200V 50A three-phase full-bridge IGBTs 8_3 and six 1200V 50A three-phase full-bridge FRDs 8_4. The chips are soldered to the substrate using soldering or other soldering processes.

[0055] The substrate is divided into multiple irregular base islands, which serve as carriers for power chips and internal wiring of the module. Among them, the first bow-shaped base island 5_1 carries the three diodes of the common cathode of the three-phase rectifier bridge section, the second bow-shaped base island 5_2 carries the diodes of the chopper section and the FRD and IGBT of the upper bridge arm of the U phase of the three-phase full bridge section, and the third bow-shaped base island 9_1 carries the FRD and IGBT of the upper bridge arms of the V and W phases of the three-phase full bridge section.

[0056] By designing bridge-type bonding wires A and B, the input current transmission path of the three-phase rectifier bridge section and the output current transmission path of the three-phase full-bridge section are shortened, respectively, reducing parasitic resistance and parasitic inductance. The bonding process is used to connect the chip to the copper layer on the substrate, between chips, and between the copper layer on the substrate and the pins using bonding wires according to the pin number and the defined circuit topology. After the bonding process is completed, the module is potted to isolate moisture and improve the reliability of the module.

[0057] Specifically, the bridge bonding wire 7_1 connects the IGBT emitter and FRD anode of the lower bridge arm of phase U and the IGBT emitter and FRD anode of the lower bridge arm of phase V, shortening the output current transmission path of the three-phase full-bridge section. The bridge bonding wire 7_2 connects the anode of the three-phase power frequency diodes, shortening the input current transmission path of the three-phase rectifier bridge section. By using bridge bonding wires to connect positions at the same potential in the circuit, the shortest current transmission path is achieved, saving copper layer space on the substrate, achieving compact connection in height space, and reducing parasitic inductance and parasitic resistance.

[0058] The technical solution of this application provides a novel substrate layout structure, which adopts multiple irregularly shaped arched substrate islands to integrate six 1200V 50A power frequency diodes, one 1200V 15A diode and one 1200V 25A IGBT, six 1200V 50A FRDs and six 1200V 50A IGBTs into three circuit topologies: three-phase rectifier bridge, chopper and three-phase full bridge, onto two substrates of equal area. The pins brought out by the module are consistent with the pin definitions of existing low-power solutions, which can be directly compatible and upgraded, reducing the secondary development of the customer's driver.

[0059] According to another aspect of the embodiments of this application, the power module described above can be used in equipment such as home appliances, new energy vehicles, industrial power supplies, and industrial motors.

[0060] By designing multiple bridge-type bonding wire connections, matching three circuit topologies—three-phase rectifier bridge, chopper, and three-phase full bridge—equal potentials in the integrated circuit are connected in series using bonding wires. Compared to existing designs, this approach is simpler, more compact in designing the current transmission path, and reduces parasitic resistance and inductance.

[0061] The above description is only a preferred embodiment of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. A power module, characterized in that, include: A three-phase rectifier bridge, a chopper circuit, and a three-phase full bridge are provided. The three-phase rectifier bridge is used to rectify the input three-phase AC power into DC power. The chopper circuit is used to eliminate power surges. The three-phase full bridge is used to convert the rectified DC power into three-phase AC power output. The semiconductor devices of the three-phase rectifier bridge, the semiconductor devices of the chopper circuit, and the semiconductor devices of the three-phase full bridge are arranged on the substrate in an arc-shaped base island layout.

2. The power module according to claim 1, characterized in that, The liner consists of two independent liner plates, namely a first liner plate and a second liner plate. The semiconductor devices of the three-phase rectifier bridge, the semiconductor devices of the chopper circuit, and the semiconductor devices of the three-phase full bridge are integrated on the two liner plates respectively using an arc-shaped base island layout structure.

3. The power module according to claim 2, characterized in that, Two arched base islands are formed on the first liner, and one arched base island is formed on the second liner.

4. The power module according to claim 3, characterized in that, The three-phase rectifier bridge includes six diodes, the chopper circuit includes one diode and one IGBT, and the three-phase full bridge includes six FRDs and six IGBTs. The six diodes of the three-phase rectifier bridge, one diode and one IGBT of the chopper circuit, and a portion of the semiconductor devices of the three-phase full bridge are integrated on the first substrate, and another portion of the semiconductor devices of the three-phase full bridge are integrated on the second substrate.

5. The power module according to claim 4, characterized in that, The first arch-shaped base island on the first substrate carries the three common cathode diodes of the three-phase rectifier bridge, and the second arch-shaped base island carries the diodes of the chopper circuit, as well as the FRD and IGBT of the upper U-phase bridge arm of the three-phase full bridge.

6. The power module according to claim 4, characterized in that, The third arched base island on the second liner supports the FRD and IGBT of the V-phase and W-phase upper arms of the three-phase full bridge.

7. The power module according to claim 2, characterized in that, The first liner and the second liner have the same area.

8. The power module according to any one of claims 1 to 7, characterized in that, The three-phase rectifier bridge and the three-phase full bridge use a bridge-type bonding wire to connect positions with the same potential in the circuit, thereby shortening the current transmission path and reducing parasitic inductance and parasitic resistance.

9. The power module according to claim 8, characterized in that, The first bridge bonding wire is used to connect the emitter of the IGBT and the anode of the FRD in the lower arm of the U-phase of the three-phase full bridge, and the emitter of the IGBT and the anode of the FRD in the lower arm of the V-phase, so as to shorten part of the output current transmission path of the three-phase full bridge. The second bridge bonding wire is used to connect the anode of the diodes in the three-phase rectifier bridge, so as to shorten part of the input current transmission path of the three-phase rectifier bridge.

10. The power module according to any one of claims 1 to 7, characterized in that, The gate bonding wires of the power module are made of aluminum wire with a diameter of 8 mil, and the other bonding wires are made of aluminum wire with a diameter of 12 mil or 15 mil.

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