Frequency-doubled diode chip structure and method of manufacturing the same

CN115832022BActive Publication Date: 2026-06-12THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
Filing Date
2023-01-03
Publication Date
2026-06-12

AI Technical Summary

Technical Problem

In existing frequency multiplier diode chip structures, the distance between the cathode pad and the anode pad is relatively large, resulting in a large parasitic resistance and affecting the conversion efficiency of the frequency multiplier.

Method used

A common cathode and separately grounded anode structure design is adopted. By setting a common cathode pad and separately grounded anode pads on the substrate and using air bridges to connect the metals, the anode metals can be fabricated simultaneously, reducing the spacing between the anode metals.

Benefits of technology

It effectively eliminates the parasitic resistance caused by the contact between the grounded cathode pad and the N+ gallium nitride layer, shortens the distance between the anode metals, reduces parasitic resistance, and improves the conversion efficiency of the frequency multiplier.

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    Figure CN115832022B_ABST
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Abstract

The application provides a frequency doubling diode chip structure and a preparation method thereof. The structure comprises a substrate, an N+ gallium nitride layer arranged on the substrate, first and second anode pads arranged on the substrate along a first direction and located on both sides of the N+ gallium nitride layer respectively, a common cathode pad arranged on the substrate along a second direction and located on both sides of the N+ gallium nitride layer respectively, a cathode metal arranged on the N+ gallium nitride layer along the second direction and located on both sides of the N+ gallium nitride layer respectively, the cathode metal being connected with the common cathode pad through a cathode air bridge, a first N-gallium nitride layer and a second N-gallium nitride layer arranged on the N+ gallium nitride layer along the first direction, first and second anode metals arranged on the first and second N-gallium nitride layers respectively, and the first and second anode metals being connected with the first and second anode pads through first and second anode air bridges respectively. The application can reduce the parasitic resistance and improve the conversion efficiency of the frequency doubler.
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