Etching cavity capable of realizing rapid switching of process gas

By employing modular gas control components and fast switching valves in the etching chamber, rapid alternation and accurate control of process gases are achieved, solving the problems of sidewall baining and gas switching in Bosch's through-silicon via (TSV) process, improving process efficiency and stability, and enhancing the electrical interconnect performance of semiconductor devices.

CN224503904UActive Publication Date: 2026-07-14JIANGSU ALPHA-SEMICON EQUIP CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
JIANGSU ALPHA-SEMICON EQUIP CO LTD
Filing Date
2025-06-13
Publication Date
2026-07-14

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Abstract

The utility model provides a kind of etching cavity for realizing process gas quick switching, and etching cavity includes plasma source chamber and reaction chamber, and the upper surface of reaction chamber is equipped with the gas inlet of process gas;Quick gas replacement device includes the gas pipeline, gas control assembly and gas inlet pipeline that are sequentially communicated along process gas gas inlet direction;Gas pipeline is communicated with process gas gas source, and gas inlet pipeline is communicated with gas inlet;Gas control assembly includes the input, gas inlet valve, flow controller, process gas branch and output that are sequentially communicated along process gas gas inlet direction;Input is communicated with gas pipeline, and output is communicated with gas inlet pipeline;Gas control assembly is also equipped with fixed plate, and fixed plate is installed in plasma source chamber, and the input, gas inlet valve, flow controller, process gas branch and output are sequentially installed in the fixed plate.The utility model solves the problem that deposition gas and etching gas are difficult to quickly switch and accurately control in quick alternate process.
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