Coating system

Abstract

The utility model relates to a kind of semiconductor material processing technical field, disclose a coating system, chamber can provide vacuum environment for coating work, receptor material and target material are spaced apart in chamber;Synchronous opening sputtering source and super atom beam source, sputtering source emits ion beam to target material to produce sputtering atom, receptor material receives sputtering atom to deposit film layer;Super atom beam source emits super atom beam to receptor material, utilize the characteristics of super atom high kinetic energy low speed, super atom beam collision is located in the lateral sputtering effect of sputtering atom that receptor material surface will form film layer, for sputtering atom increase kinetic energy, after the motion of the film layer deposited on receptor material surface is more dense, sputtering atom deposition is deposited to recessed groove at protruding place, realize uniform atomic level deposition effect, reduce the formation of film layer ridge-shaped organization;Super atom with high kinetic energy collision receptor material produces local thermal annealing effect, effectively improve film layer surface smoothness and surface lattice quality, reduce the stress and resistivity of film layer.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor material processing technology, and in particular to a coating system. Background Technology

[0002] Coating is a crucial process in semiconductor material processing, used to form different films on the surface of semiconductor materials to enhance their functionality. Ion beam sputtering is a commonly used method, offering advantages in adhesion, density, and lattice texture. However, the high-energy ion source used in ion beam sputtering, including sputtered atoms and reflected argon ions, directs these particles to the semiconductor surface, causing surface etching by sputtered atoms—a typical result of directional sputtering. Microstructural analysis reveals that this process leads to finer grains, denser micro-defects, sharper strain profiles, and metastable lattice structures in the film. These characteristics are consistent with the high stress and high resistivity of the film, which are undesirable.

[0003] Existing technologies mitigate these issues by adding an auxiliary ion source. This involves applying a high-flux, low-energy auxiliary ion beam to the growing film, which encourages sputtered atoms to improve micro-defects and strain profile density within the grains. However, the sputtering effect of the auxiliary ion source leads to a sharp decrease in the film deposition rate. Furthermore, the beam cancellation between the auxiliary and main ion sources can cause severe erosion of the film surface by the main ion source, potentially resulting in more pronounced ridge-like structures at the film interface. Utility Model Content

[0004] The purpose of this invention is to provide a coating system that can improve the surface smoothness and lattice quality of the film, and effectively reduce the stress and resistivity of the film.

[0005] To achieve this objective, the present invention adopts the following technical solution:

[0006] Coating system, including:

[0007] A chamber equipped with a vacuum pump for selectively bringing the chamber into a vacuum state;

[0008] The target material is fixed inside the chamber at a preset angle;

[0009] A receptor material is disposed inside the chamber, and the receptor material is spaced apart from the target material.

[0010] A sputtering source is disposed on the wall of the chamber. The sputtering source is used to emit an ion beam toward the target material. The target material can receive the ion beam to generate sputtered atoms on the surface of the target material. The side of the acceptor material close to the target material can receive the sputtered atoms.

[0011] A superatomic beam source is disposed on the wall of the chamber. The superatomic beam source is used to emit a superatomic beam toward the acceptor material. The superatomic beam contains more than 90% superatoms, and the number of elementary particles in a single superatom is greater than or equal to 300.

[0012] As an optional technical solution for the coating system, the coating system further includes an electrostatic field scanning device, which is disposed at the emission end of the superatomic beam and is used to change the irradiation path of the superatomic beam so that the superatomic beam reciprocates to scan the side of the acceptor material close to the target material.

[0013] As an optional technical solution for the coating system, the coating system further includes an electrostatic lens device, which is disposed at the emission end of the superatomic beam and is used to expand the superatomic beam so that the irradiation surface of the superatomic beam covers the side of the acceptor material close to the target material.

[0014] As an optional technical solution for the coating system, the acceptor material is movably connected to the chamber via a support arm. The support arm can drive the acceptor material to rotate along the central axis, and the support arm can change the relative angle between the acceptor material and the target material.

[0015] As an optional technical solution for the coating system, the coating system also includes a heating device, which is disposed inside and / or outside the chamber.

[0016] As an optional technical solution for the coating system, the coating system also includes a neutralizer, which is used to neutralize the positive charge in the chamber.

[0017] As an optional technical solution for the coating system, the sputtering source adopts a Kaufman ion source.

[0018] As an optional technical solution for the coating system, the sputtering source generates ions using a hot cathode plasma discharge mode or an inductively coupled plasma discharge mode, and the ions are introduced into the chamber through a grid structure to form the ion beam.

[0019] As an optional technical solution for the coating system, the superatomic beam source uses an ultrasonic nozzle to generate superatoms, which are then ionized, accelerated, magnetically filtered, and shaped to form the superatomic beam.

[0020] As an optional technical solution for the coating system, the distance between the center of the sputtering source end face and the center of the target material ranges from 20 cm to 60 cm; the distance between the center of the superatomic beam source end face and the center of the acceptor material ranges from 20 cm to 100 cm; and the distance between the center of the target material and the center of the acceptor material ranges from 20 cm to 100 cm.

[0021] The beneficial effects of this utility model are:

[0022] The coating system provided by this utility model includes a chamber, a target material, a acceptor material, a sputtering source, and a superatomic beam source. The chamber is equipped with a vacuum pump, which can provide a highly efficient vacuum environment for coating. The target material is fixed inside the chamber at a preset angle. The acceptor material is also placed inside the chamber, with the acceptor material and the target material spaced apart. A sputtering source is installed on the wall of the chamber to emit an ion beam towards the target material. The target material receives the bombardment of the ion beam, causing sputtered atoms to be generated on its surface. After being sputtered from the target surface, the sputtered atoms are received by the acceptor material and deposited on the side of the acceptor material closest to the target, where a film begins to grow. Simultaneously, a superatomic beam source is installed on the wall of the chamber to emit a superatomic beam towards the acceptor material. Utilizing the high kinetic energy and low velocity characteristics of superatoms, the superatomic beam collides with the sputtered atoms on the acceptor material surface that are about to be deposited as a film, increasing the kinetic energy of these sputtered atoms and making the film formed after the sputtered atoms move on the acceptor material surface more dense. At the same time, by utilizing the lateral sputtering effect of superatoms, sputtered atoms from the protrusions on the acceptor material surface are deposited into the grooves on the acceptor material surface, achieving a uniform atomic-level deposition effect and reducing the formation of ridge-like structures in the film. Superatoms account for more than 90% of the superatoms in the superatom beam, and the number of elementary particles in a single superatom is greater than or equal to 300. Compared with single atoms, superatoms have a particle mass and collision cross-section that are several to thousands of times greater. Therefore, superatoms have the characteristics of high energy and low speed. When superatoms collide with the surface of the acceptor material, the high kinetic energy of the superatoms not only causes a transverse sputtering effect, but also produces a local thermal annealing effect. This can effectively help sputtered atoms improve the surface smoothness and surface lattice quality of the acceptor material, and effectively reduce the stress and resistivity of the film. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the arrangement structure of the sputtering system provided in a specific embodiment of this utility model;

[0024] Figure 2 This is a schematic diagram of the irradiation of the sputtering system using an electrostatic field scanning device provided in a specific embodiment of this utility model;

[0025] Figure 3 This is a schematic diagram of the irradiation of the sputtering system using an electrostatic lens device provided in a specific embodiment of this utility model.

[0026] In the picture:

[0027] 100, Chamber; 200, Target material; 300, Acceptor material; 400, Sputtering source; 500, Neutralizer; 600, Superatomic beam source; 700, Electrostatic field scanning device; 800, Electrostatic lens device. Detailed Implementation

[0028] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, not the entire structure.

[0029] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0030] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0031] In the description of this embodiment, the terms "upper," "lower," "right," and "left," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first" and "second" are only used for distinction in description and have no special meaning.

[0032] like Figures 1 to 3As shown, this utility model discloses a coating system, including a chamber 100, a target 200, a acceptor material 300, a sputtering source 400, and a superatomic beam source 600. The chamber 100 is equipped with a vacuum pump, which selectively brings the chamber 100 to a vacuum state, providing an efficient vacuum environment for coating. During operation, the vacuum pump needs to evacuate air to create a vacuum, but in non-operational states, the chamber 100 is normally filled with atmospheric air. The target 200 is fixed inside the chamber 100 at a preset angle. The acceptor material 300 is also placed inside the chamber 100, spaced apart from the target 200. The sputtering source 400 is disposed on the wall of the chamber 100, emitting an ion beam towards the target 200. The target 200 receives the ion beam bombardment, causing sputtered atoms to form on its surface. The acceptor material 300, on the side closest to the target 200, receives the sputtered atoms and begins to grow a film on its surface. Meanwhile, the superatomic beam source 600 is disposed on the wall of the chamber 100. The superatomic beam source 600 is used to emit a superatomic beam to the acceptor material 300. While sputtered atoms are deposited on the surface of the acceptor material 300, the superatomic beam reaches the surface of the acceptor material 300. Utilizing the characteristics of high kinetic energy and low velocity of superatoms, it collides with the deposited sputtered atoms, increasing the kinetic energy of the sputtered atoms, making the deposition effect of sputtered atoms on the surface of the acceptor material 300 more dense. At the same time, by utilizing the lateral sputtering effect of superatoms, sputtered atoms at the protrusions on the surface of the acceptor material 300 are deposited into the grooves on the surface of the acceptor material 300, achieving a uniform atomic-level deposition effect, which can reduce the formation of ridge-like structures in the film layer.

[0033] Understandably, superatoms are nanoparticles with diameters on the nanometer scale, consisting of gas molecules bound together by van der Waals forces. The number of gas molecules within a superatom can range from hundreds to thousands. During ionization collisions and electromagnetic field motion, a superatom can be considered as a single "atom." Compared to monoatoms, superatoms have a particle mass and collision cross-section increased by several to thousands of times. Therefore, superatoms are characterized by high energy and low velocity. Superatoms account for more than 90% of a superatom beam, and a single superatom contains more than or equal to 300 elementary particles. When superatoms collide with the surface of the acceptor material 300, their high kinetic energy leads to lateral sputtering and localized thermal annealing effects, effectively helping sputtered atoms improve the surface smoothness and lattice quality of the acceptor material 300 film.

[0034] For example, the acceptor material 300 is a semiconductor material, specifically a wafer, which is round in shape and has the most applications; the acceptor material 300 in this application is not limited to a circular wafer.

[0035] In this embodiment, the coating system also includes a neutralizer 500, which is used to neutralize unnecessary positive charges in the chamber 100 to avoid charge accumulation on the surfaces of the target material 200 and the acceptor material 300, thereby eliminating the space charge effect.

[0036] This invention also discloses a coating method, which uses the coating system described above to prepare a film layer. The specific operation is as follows: the sputtering source 400 is activated. The ion beam emitted by the sputtering source 400 is neutralized by the neutralizer 500 and then collides with the surface of the target material 200, so that sputtered atoms are generated on the surface of the target material 200. After being sputtered from the surface of the target material 200, the sputtered atoms are received by the acceptor material 300 and deposited on the side of the acceptor material 300 close to the target material 200. Simultaneously, the sputtering source 400 and the superatomic beam source 600 are activated. The superatomic beam source 600 radiates a superatomic beam towards the side of the acceptor material 300 close to the target material 200. Taking advantage of the high kinetic energy and low velocity characteristics of superatoms, the superatomic beam will collide with the sputtered atoms on the surface of the acceptor material 300 that are about to be deposited into a film layer, and increase the kinetic energy of the sputtered atoms, making the formed film layer more dense. This coating method is used to coat the surface of the acceptor material 300 and can effectively reduce the stress and resistivity of the film layer.

[0037] Furthermore, before starting the sputtering source 400, the superatomic beam source 600 is started separately. By irradiating or scanning the surface of the acceptor material 300 with the superatomic beam, the oxide layer on the surface of the acceptor material 300 can be removed by utilizing the lateral sputtering effect of the superatomic beam, thereby reducing the surface roughness of the acceptor material 300, increasing dangling bonds and improving surface adhesion. Then, the sputtering source 400 is started, and together with the superatomic beam source 600, the acceptor material 300 is coated.

[0038] Specifically, the superatomic beam source 600 uses an ultrasonic nozzle to generate superatoms. These superatoms undergo ionization, acceleration, magnetic sieving, and shaping processes to form a high-energy superatomic beam. The ionized superatomic beam is then filtered again by a magnetic field to remove other atoms and ions that have not formed superatoms. The magnetic field is a ring-shaped magnetic field of a certain length, with a uniform magnetic field at its center, and the magnetic field strength gradually increases radially outward from the center. For example, the uniform magnetic field strength at the center of the ring-shaped magnetic field is 0.05T-0.70T, and the length of the magnetic field is 2cm-20cm.

[0039] It is understandable that shaping, including methods such as beam expansion or scanning, can change the shape and irradiation path of the superatomic beam by adding a superatomic beam source processing device.

[0040] like Figure 2As shown, the coating system also includes an electrostatic field scanning device 700, which serves as a superatomic beam source processing device. The electrostatic field scanning device 700 is positioned at the emission end of the superatomic beam to change the irradiation path of the superatomic beam, causing it to reciprocate and scan the side of the acceptor material 300 close to the target material 200, thus mimicking the same effect of irradiating the surface of the acceptor material 300. The working principle of the electrostatic field scanning device 700 can be based on the force deflection of charged particles in an electric field, with the trajectory controlled in real time by adjusting the voltage of the deflection plate; or it can use an alternating magnetic field to scan charged particles using the Lorentz force. Any electrostatic field scanning device 700 based on the above principles is acceptable, and its specific form is not limited.

[0041] like Figure 3 As shown, the coating system also includes an electrostatic lens device 800, which serves as a superatomic beam source processing device. The electrostatic lens device 800 is positioned at the emission end of the superatomic beam to expand it, ensuring that the expanded beam covers the side of the acceptor material 300 closest to the target material 200, thus completely irradiating the acceptor material 300. The core of the beam expansion by the electrostatic lens device 800 is to generate an off-axis electric field through electrode potential configuration, causing charged particles to achieve radial divergence velocity, thereby expanding the beam diameter. Any electrostatic lens device 800 based on this principle is acceptable and its specific form is not limited.

[0042] For example, the sputtering source 400 uses a DC or RF type Kaufman ion source, characterized by precise control of ion energy and beam density, unaffected by the environment; low operating temperature and low contamination.

[0043] In this embodiment, the sputtering source 400 generates ions using a hot cathode plasma discharge mode or an inductively coupled plasma discharge mode. The ions are introduced into the chamber 100 through a grid structure to form a single-energy ion beam with a specific beam distribution.

[0044] Specifically, such as Figure 1 As shown, the distance L1 between the center of the sputtering source 400 end face and the center of the target 200 ranges from 20 cm to 60 cm; the distance L2 between the center of the superatom beam source 600 end face and the center of the acceptor material 300 ranges from 20 cm to 100 cm; and the distance L3 between the center of the target 200 and the center of the acceptor material 300 ranges from 20 cm to 100 cm. With the target 200 installed at a preset angle, a common sputtering path for ion beam and superatom beam coating can usually be successfully formed.

[0045] Furthermore, the acceptor material 300 is movably connected to the chamber 100 via a support arm. The support arm can drive the acceptor material 300 to rotate around its central axis, and can also change the relative angle between the acceptor material 300 and the target material 200. This helps to improve the uniformity of the coating by changing the position of the acceptor material 300 within the chamber 100 or adjusting its mounting angle. A mounting chuck is mounted on the support arm, onto which the acceptor material 300 is assembled. The mounting chuck can be driven by a drive mechanism to rotate, thereby realizing the rotation of the acceptor material 300.

[0046] Specifically, the coating system also includes a heating device, which is located inside the chamber 100 or arranged in parallel inside and outside, to raise the ambient temperature inside the chamber 100. Heating the chamber wall inside and outside the chamber 100 together can accelerate the removal of gaseous impurities, such as water vapor, attached to the surface of the chamber wall and internal parts, accelerate the establishment of an ultra-high vacuum environment, and effectively reduce coating quality problems caused by gaseous impurities.

[0047] Obviously, the above embodiments of this utility model are merely examples for clearly illustrating the present utility model, and are not intended to limit the implementation of the present utility model. Those skilled in the art can make various obvious changes, readjustments, and substitutions without departing from the protection scope of this utility model. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the protection scope of the claims of this utility model.

Claims

1. A coating system, characterized in that, include: A chamber (100) is equipped with a vacuum pump for selectively bringing the chamber (100) to a vacuum state; A target (200) is fixed inside the chamber (100) at a preset angle; A receptor material (300) is disposed inside the chamber (100), and the receptor material (300) is disposed at a distance from the target material (200); A sputtering source (400) is disposed on the wall of the chamber (100). The sputtering source (400) is used to emit an ion beam toward the target (200). The target (200) can receive the ion beam to generate sputtered atoms on the surface of the target (200). The side of the acceptor material (300) close to the target (200) can receive the sputtered atoms. A superatomic beam source (600) is disposed on the wall of the chamber (100). The superatomic beam source (600) is used to emit a superatomic beam to the acceptor material (300). The superatomic beam contains more than 90% superatoms, and the number of basic particles in a single superatom is greater than or equal to 300.

2. The coating system according to claim 1, characterized in that, The coating system further includes an electrostatic field scanning device (700), which is disposed at the emission end of the superatomic beam and is used to change the irradiation path of the superatomic beam so that the superatomic beam reciprocates to scan the side of the acceptor material (300) close to the target material (200).

3. The coating system according to claim 1, characterized in that, The coating system further includes an electrostatic lens device (800) disposed at the emitting end of the superatomic beam for expanding the superatomic beam so that the irradiated surface of the superatomic beam covers the side of the acceptor material (300) close to the target material (200).

4. The coating system according to claim 1, characterized in that, The receptor material (300) is movably connected to the chamber (100) via a support arm. The support arm can drive the receptor material (300) to rotate along the central axis and can change the relative angle between the receptor material (300) and the target material (200).

5. The coating system according to claim 1, characterized in that, The coating system also includes a heating device disposed inside and / or outside the chamber (100).

6. The coating system according to claim 1, characterized in that, The coating system also includes a neutralizer (500) for neutralizing the positive charge in the chamber (100).

7. The coating system according to claim 1, characterized in that, The sputtering source (400) is a Kaufman ion source.

8. The coating system according to claim 1, characterized in that, The sputtering source (400) generates ions using a hot cathode plasma discharge mode or an inductively coupled plasma discharge mode. The ions are introduced into the chamber (100) through a grid structure to form the ion beam.

9. The coating system according to claim 1, characterized in that, The superatomic beam source (600) uses an ultrasonic nozzle to generate superatoms, which are then ionized, accelerated, magnetically filtered, and shaped to form the superatomic beam.

10. The coating system according to any one of claims 1-9, characterized in that, The distance between the center of the sputtering source (400) end face and the center of the target material (200) ranges from 20 cm to 60 cm; the distance between the center of the superatomic beam source (600) end face and the center of the acceptor material (300) ranges from 20 cm to 100 cm; the distance between the center of the target material (200) and the center of the acceptor material (300) ranges from 20 cm to 100 cm.

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