Double-sided heat dissipation flip GaN power chip packaging structure
By using a double-sided heat dissipation flip-chip structure, a solder layer connects the electrodes to the lead frame terminals, and thermally conductive adhesive and a heat sink are used, the problems of inductance and poor heat dissipation in GaN power chip packaging are solved, achieving high-frequency and high-speed performance and good heat dissipation effect.
CN224556280UActive Publication Date: 2026-07-24HUNAN GUOXIN SEMICON TECH CO LTD
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- HUNAN GUOXIN SEMICON TECH CO LTD
- Filing Date
- 2025-08-15
- Publication Date
- 2026-07-24
AI Technical Summary
Technical Problem
Existing GaN power chip packaging methods suffer from problems such as wire bonding inductance affecting high-frequency and high-speed performance, and poor heat dissipation.
Method used
It adopts a double-sided heat dissipation flip-chip structure, connecting the electrodes and lead frame terminals through a solder layer, combined with thermally conductive adhesive and heat sink, eliminating lead bonding and achieving double-sided heat dissipation.
Benefits of technology
It improves the high-frequency and high-speed performance of the packaging structure, enhances heat dissipation, and improves mechanical reliability and operating condition.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN224556280U_ABST
Abstract
The utility model provides a double -sided heat dissipation inverted GaN power chip package structure relates to the field of semiconductor package, including internal structure, internal structure includes: GaN power chip, positive face has drain electrode, source electrode and grid electrode, heat dissipation board sets up in the top of GaN power chip, and heat dissipation board is bonded with the back of GaN power chip, source electrode lead frame terminal, drain electrode lead frame terminal, grid electrode lead frame terminal are electrically connected with the electrode of corresponding, and the package structure still includes plastic package body, and the plastic package body is wrapped in the outside of internal structure, and the upper surface of heat dissipation board, source electrode lead frame terminal, drain electrode lead frame terminal and the lower surface of grid electrode lead frame terminal are exposed, and the application is through the electrode in the GaN power chip and corresponding lead frame terminal electric connection, discarded the mode of lead bonding, thereby eliminates the influence of inductance, makes this package structure can provide higher frequency, higher speed's use effect when using.
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