Silicon wafer diffusion device and gas source diffusion quartz boat

Abstract

The utility model discloses a silicon wafer diffusion device and gas source diffusion quartz boat, this silicon wafer diffusion device includes first end plate and second end plate, and the first end plate and second end plate are connected with support column, and support column is spaced apart and is provided with multiple rows along the preset direction, and the installation space of accommodating silicon wafer is formed between every two adjacent rows of support column. First end plate and second end plate all have first preset area, and first preset area is equipped with the first air hole of intercommunication installation space, and first preset area is opposite with the junction area of two adjacent installation spaces. This silicon wafer diffusion device can bear multiple rows of silicon wafer, to carry out diffusion process to multiple rows of silicon wafer simultaneously, improve diffusion efficiency. The first air hole provides the junction area of two adjacent installation spaces with airflow circulation channel, and airflow can more evenly circulate the whole silicon wafer diffusion device, solve the problem of insufficient air flow between two adjacent rows of silicon wafer, improve the square resistance uniformity and film thickness uniformity of silicon wafer after diffusion process, reduce production cost.

Description

Technical Field

[0001] This utility model relates to the field of solar cell technology, and in particular to a silicon wafer diffusion device and a gas source diffusion quartz boat. Background Technology

[0002] In the manufacturing process of solar cells, the silicon wafer diffusion process is one of the key processes. The diffusion process mainly involves introducing specific impurities (such as phosphorus, boron, etc.) into the inside or surface of the silicon wafer to change the electrical properties of the silicon wafer, such as conductivity type and resistivity.

[0003] During the diffusion process, silicon wafers need to be placed in a carrier and secured to prevent them from moving freely. A common carrier is the quartz boat, which consists of two end plates and a column connecting the two end plates. Existing quartz boats typically can only hold one row of silicon wafers, resulting in low production efficiency. Furthermore, the end plates are usually solid structures, which can easily obstruct airflow, leading to insufficient airflow in the central area of ​​the quartz boat. This results in poor sheet resistance and film thickness uniformity in that area, affecting the production quality of the silicon wafers and increasing production costs.

[0004] Therefore, there is an urgent need for a silicon wafer diffusion device and a gas source diffusion quartz boat to solve the above problems. Utility Model Content

[0005] Based on the above problems, the purpose of this utility model is to provide a silicon wafer diffusion device and a gas source diffusion quartz boat, which can improve the airflow uniformity in the silicon wafer diffusion process, improve the sheet resistance and film thickness uniformity of the silicon wafer, and reduce production costs.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] On the one hand, a silicon wafer diffusion device is provided, including a first end plate and a second end plate, with a support column connected between the first end plate and the second end plate. The support column is arranged in multiple rows at intervals along a preset direction, and an installation space for accommodating silicon wafers is formed between each two adjacent rows of the support column.

[0008] Both the first end plate and the second end plate have a first preset area, and a first vent hole connecting the installation space is provided in the first preset area, and the first preset area is opposite to the boundary area of ​​two adjacent installation spaces.

[0009] As an optional solution for the silicon wafer diffusion device of this utility model, the location of the first vent hole in the first preset area is the non-load-bearing area of ​​the first end plate and the second end plate.

[0010] As an optional solution for the silicon wafer diffusion device of this utility model, a plurality of first ventilation holes are provided at intervals in the first preset area;

[0011] The plurality of first vent holes have the same shape; or, at least some of the plurality of first vent holes have different shapes.

[0012] As an optional solution for the silicon wafer diffusion device of this utility model, the first vent hole is a regular hole or an irregular hole. When the first vent hole is a regular hole, it includes at least one of a circular hole, an elliptical hole, a triangular hole, a strip hole, and a rectangular hole. When the first vent hole is an irregular hole, it is designed as an irregular triangle, an irregular quadrilateral, or an irregular pentagon.

[0013] As an optional embodiment of the silicon wafer diffusion device of this utility model, the width of the first vent hole is W, and the value of W is in the range of: W≥1mm.

[0014] As an optional embodiment of the silicon wafer diffusion device of this utility model, the opening area of ​​the first vent is S1, and the value of S1 is in the range of: S1≥0.78mm. 2 .

[0015] As an optional solution for the silicon wafer diffusion device of this utility model, both the first end plate and the second end plate have a second preset area, and a second vent hole is provided in the second preset area. The second preset area is opposite to the area where the installation space is located.

[0016] As an optional embodiment of the silicon wafer diffusion device of this utility model, the support column is provided with a hollow cavity extending through it, and the support column is provided with a plurality of third vent holes at intervals along its extension direction, and the plurality of third vent holes are all connected to the hollow cavity.

[0017] As an optional embodiment of the silicon wafer diffusion device of this utility model, the support column is provided with a plurality of slots spaced apart along its extension direction, and the edge of the silicon wafer can be locked into the slots.

[0018] As an optional embodiment of the silicon wafer diffusion device of this utility model, the silicon wafer diffusion device further includes a positioning structure disposed on the support column, and the silicon wafer diffusion device is positioned and placed in the boat support that carries the silicon wafer diffusion device through the positioning structure.

[0019] On the other hand, a gas source diffusion quartz boat is provided, including the silicon wafer diffusion device as described above.

[0020] The beneficial effects of this utility model are as follows:

[0021] The silicon wafer diffusion device and gas source diffusion quartz boat provided by this utility model allow silicon wafers requiring diffusion to be placed in an installation space. Because there are multiple installation spaces between the first and second end plates, the device can simultaneously support multiple rows of silicon wafers, enabling simultaneous diffusion and improving diffusion efficiency. By setting first vent holes in a first preset area on the first and second end plates, and designing this first preset area to face the boundary area between two adjacent installation spaces, airflow can pass through the airflow channel formed by the first vent hole on the first end plate, the boundary area between adjacent installation spaces, and the first vent hole on the second end plate. In other words, the first vent hole provides an airflow channel for the boundary area between two adjacent installation spaces. During diffusion, the airflow can circulate more evenly throughout the entire silicon wafer diffusion device, solving the problem of insufficient airflow between adjacent rows of silicon wafers, improving the sheet resistance uniformity and film thickness uniformity after diffusion, thereby improving silicon wafer performance and the quality of subsequent products, increasing production capacity and efficiency, and reducing production costs. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments of this utility model will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the content of the embodiments of this utility model and these drawings without creative effort.

[0023] Figure 1 This is a schematic diagram of the silicon wafer diffusion device provided in a specific embodiment of this utility model;

[0024] Figure 2 This is a plan view of the first end plate provided in a specific embodiment of this utility model;

[0025] Figure 3 This is a dimensioned drawing of the first end plate provided in a specific embodiment of this utility model;

[0026] Figure 4 This is a plan view of the first end plate provided in Embodiment 2 of this utility model.

[0027] In the picture:

[0028] 1. First end plate; 2. Second end plate; 3. Support column; 4. Positioning structure;

[0029] 11. First preset area; 12. First vent; 13. Second preset area; 14. Second vent;

[0030] 31. Card slot;

[0031] 41. Connecting part; 42. Positioning part; 43. Positioning groove. Detailed Implementation

[0032] To make the technical problems solved by this utility model, the technical solutions adopted, and the technical effects achieved clearer, the technical solutions of the embodiments of this utility model will be further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0033] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this utility model and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. Specifically, the terms "first position" and "second position" refer to two different positions.

[0034] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to fixed connections or detachable connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and internal connections between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0035] Example 1

[0036] like Figure 1 As shown, this embodiment provides a silicon wafer diffusion device that can improve the airflow uniformity in the silicon wafer diffusion process, increase the sheet resistance and film thickness uniformity of the silicon wafer, and reduce production costs. The silicon wafer diffusion device includes a first end plate 1, a second end plate 2, and a support column 3.

[0037] Among them, see Figure 1 , Figure 2 and Figure 3The support column 3 is connected between the first end plate 1 and the second end plate 2, and multiple rows of support columns 3 are arranged at intervals along a preset direction between the first end plate 1 and the second end plate 2. Each pair of adjacent rows of support columns 3 forms an installation space to accommodate silicon wafers. The first end plate 1 and the second end plate 2 each have a first preset area 11. A first vent hole 12 communicating with the installation space is provided in the first preset area 11, and the first preset area 11 is opposite to the boundary area of ​​two adjacent installation spaces.

[0038] It is understood that the first end plate 1 and the second end plate 2 each have a first preset area 11 at the junction of each pair of adjacent installation spaces, and each first preset area 11 is provided with a first vent 12.

[0039] For example, when two rows of silicon wafers are installed between the first end plate 1 and the second end plate 2 (i.e., there are two installation spaces), each of the first end plate 1 and the second end plate 2 has a first preset area 11. When three rows of silicon wafers are installed between the first end plate 1 and the second end plate 2 (i.e., there are three installation spaces), each of the first end plate 1 and the second end plate 2 has two first preset areas 11, and so on.

[0040] In other words, the number of first preset areas 11 on the first end plate 1 and the second end plate 2 can be adaptively increased or decreased according to the number of installation spaces (number of silicon wafer rows), that is, the position of the first vent hole 12 on the first end plate 1 and the second end plate 2 can be adaptively increased or decreased.

[0041] The silicon wafer diffusion device provided in this application embodiment, when in use, places the silicon wafers that need to undergo diffusion in the installation space. Since there are multiple installation spaces between the first end plate 1 and the second end plate 2, the silicon wafer diffusion device can simultaneously carry multiple rows of silicon wafers to perform the diffusion process on multiple rows of silicon wafers at the same time, thereby improving diffusion efficiency.

[0042] By providing a first vent 12 in a first preset area 11 of the first end plate 1 and the second end plate 2, and designing the first preset area 11 to be opposite to the boundary area of ​​two adjacent installation spaces, airflow can flow through the airflow channel formed by the first vent 12 of the first end plate 1, the boundary area of ​​the adjacent installation spaces, and the first vent 12 of the second end plate 2. That is, the first vent 12 provides an airflow channel for the boundary area of ​​two adjacent installation spaces. During the diffusion process, the airflow can circulate more evenly throughout the entire silicon wafer diffusion device, solving the problem of insufficient airflow between adjacent rows of silicon wafers, improving the sheet resistance uniformity of the silicon wafer after the diffusion process, and improving the film thickness uniformity of the silicon wafer after the diffusion process. This, in turn, improves the performance of the silicon wafer and the quality of subsequent products, increases product capacity and efficiency, and reduces production costs.

[0043] Optionally, the preset direction is Figure 1In the left-right direction, the support columns 3 are arranged in three rows, and the silicon wafer diffusion device has two mounting spaces, capable of mounting two rows of silicon wafers. Furthermore, each row of support columns 3 includes two spaced-apart support columns 3, improving the mounting stability of the silicon wafers. (See reference...) Figure 2 and combined Figure 3 The first preset area 11 is the central area of ​​the first end plate 1 (second end plate 2). This central area is directly opposite the boundary area of ​​the two installation spaces, so that there is enough airflow to flow between the two adjacent rows of silicon wafers during the diffusion process, ensuring that each silicon wafer surface can be subjected to uniform airflow and improving the silicon wafer diffusion quality.

[0044] In other embodiments, two or more mounting spaces can be provided between the first end plate 1 and the second end plate 2 to support two or more rows of silicon wafers, for example, three mounting spaces, four mounting spaces, etc. In specific designs, the number of rows of support columns 3 and the number of support columns 3 contained in each row of support columns 3 can be increased or decreased according to the actual situation, and are not limited to the numbers listed above.

[0045] See Figure 1 The support column 3 has multiple slots 31 spaced apart along its extension direction, allowing the edges of the silicon wafers to be secured in the slots 31. That is, the silicon wafers are fixed in the installation space by being inserted into the slots 31, thus fixing the distance between adjacent silicon wafers and preventing displacement due to vibration or airflow disturbance during the diffusion process. Simultaneously, it ensures a certain gap between adjacent silicon wafers in the same row, facilitating airflow and ensuring consistent doping or oxidation reactions.

[0046] In this embodiment, the slots 31 on adjacent rows of support columns 3 are arranged in a one-to-one correspondence, so that both ends of the silicon wafer can be inserted into the slots 31 of the two adjacent rows of support columns 3 in a one-to-one correspondence, ensuring stable installation of the silicon wafer. When there are multiple rows of support columns 3, the support columns 3 at the junction of two adjacent installation spaces are shared. The opposite sides (sides facing the installation space) of the support column 3 are provided with slots 31, so that the silicon wafers in the installation spaces on both sides of the support column 3 have a fixed insertion position.

[0047] Optionally, the first vent 12 is located in the non-load-bearing area of ​​the first end plate 1 and the second end plate 2 within the first preset area 11. That is, the first vent 12 can be located at any position in the non-load-bearing area of ​​the first end plate 1 and the second end plate 2, so that the presence of the first vent 12 will not affect the load-bearing capacity of the first end plate 1 and the second end plate 2, while reserving an airflow channel for the boundary area of ​​adjacent installation spaces.

[0048] In this embodiment, see Figure 1The non-load-bearing area is the area where the support column 3 is connected to the first end plate 1 (second end plate 2), and the first vent 12 is set at a position that avoids the connection between the support column 3 and the first end plate 1 (second end plate 2).

[0049] Optionally, the first vent 12 can be a regular or irregular hole. When the first vent 12 is a regular hole, it includes at least one of a circular hole, an elliptical hole, a triangular hole, a strip hole, and a rectangular hole. In specific design, the shape of the first vent 12 can be adaptively selected according to factors such as the size of the first preset area 11 on the first end plate 1 and the second end plate 2, and the ventilation requirements. For example, the first vent 12 can be designed as a strip hole, or it can have both strip holes and circular holes, etc., but it is not limited to the shapes and combinations listed above.

[0050] In other embodiments, when the first vent 12 is an irregular hole, it can be designed as an irregular triangle, an irregular quadrilateral, an irregular pentagon, or other irregular shapes. This utility model does not limit this.

[0051] See Figure 2 and Figure 3 A plurality of first vent holes 12 are spaced apart within the first preset area 11, which can increase airflow and further improve the uniformity of airflow. Optionally, at least some of the plurality of first vent holes 12 have different shapes to adapt to non-load-bearing areas at different locations within the first area. For example, in this embodiment... Figure 2 In the first preset area 11, the first vent 12 at the middle position is a strip-shaped hole, and the first vent 12 at both ends of the first preset area 11 is a U-shaped hole with side opening.

[0052] See Figure 3 Three first ventilation holes 12 are provided in the first preset area 11, as shown in the figure. Figure 3 In the orientation of the first preset area 11, the length of the first vent 12 in the middle is defined as L1, and the length of the first vent 12 on the upper and lower sides is defined as L2. The value of L1 can range from 50mm to 100mm; the value of L2 can range from 20mm to 40mm. For example, L1 can be 72mm and L2 can be 27.75mm. The specific values ​​of L1 and L2 are adaptively adjusted according to the area size of the first preset area 11, ventilation requirements, etc., and are not limited to the values ​​and ranges listed above.

[0053] In other embodiments, the multiple first vent holes 12 may be designed to have the same shape, for example, they may all be set as circular holes, square holes or strip holes, etc. The design can be adapted according to actual needs and is not limited to the shapes listed above.

[0054] Optionally, see Figure 2 and Figure 3The width of the first vent 12 is W, and the value of W is in the range of W≥1mm. This setting makes the width of the first vent 12 large enough to ensure that there is enough airflow to flow through the interface area between two adjacent rows of silicon wafers, thereby improving the airflow uniformity.

[0055] For example, the width W of the first vent 12 is 10 mm. In other embodiments, W may also be 1 mm, 1.5 mm, 2 mm, 2.5 mm, 3 mm, 5 mm, 8 mm, 15 mm, etc., but is not limited to the values ​​and ranges listed above.

[0056] Optionally, the opening area of ​​the first vent 12 is S1, and the value of S1 is in the range of: S1≥0.78mm. 2 This size design allows the first vent 12 to have a sufficiently large ventilation area, ensuring the ventilation volume in the boundary area between adjacent rows of silicon wafers and improving the sheet resistance and film thickness uniformity of the silicon wafers.

[0057] See Figure 1 The silicon wafer diffusion device also includes a positioning structure 4 disposed on the support column 3. The silicon wafer diffusion device is positioned within the boat support by the positioning structure 4. The positioning structure 4 can fix the installation position of the silicon wafer diffusion device within the boat support, reduce the risk of vibration, and prevent the silicon wafer from shifting or being collided with. The boat support is used to fix the position and angle of the silicon wafer diffusion device in the furnace tube (or reaction chamber), ensuring that the silicon wafer is in the optimal process area (such as the constant temperature zone) and ensuring uniform temperature and airflow.

[0058] Optionally, the positioning structure 4 includes a connecting part 41 and a positioning part 42 arranged at an angle. The two ends of the connecting part 41 are respectively connected to two support columns 3 in the same row. The positioning part 42 extends outward from the mounting space. When the silicon wafer diffusion device is placed on the boat support, the positioning part 42 can be placed against the edge of the boat support to limit the placement depth of the silicon wafer diffusion device in the boat support. Furthermore, the positioning part 42 is provided with a positioning groove 43, which can engage with the edge of the boat support to improve the placement stability of the silicon wafer diffusion device on the boat support.

[0059] See Figure 2 and Figure 3 Let X be the length of the first end plate 1 (and Y be the width of the second end plate 2). The value of X can range from 200mm to 300mm, and the value of Y can range from 130mm to 230mm. For example, X could be 250mm and Y could be 183.5mm. The specific values ​​of X and Y are adjusted adaptively according to the size of the silicon wafer and are not limited to the values ​​and ranges listed above.

[0060] See Figure 2 and Figure 3The spacing between two adjacent support columns 3 in the same row is defined as L3, and the value of L3 can range from 80mm to 120mm. For example, L3 can be 90mm, 100mm, 110mm, etc. The specific value of L3 can be adjusted adaptively based on factors such as the size of the silicon wafer and the diameter of the support column 3, and is not limited to the values ​​and ranges listed above.

[0061] Example 2

[0062] This embodiment provides a silicon wafer diffusion device, which differs from Embodiment 1 in that:

[0063] See Figure 4 Both the first end plate 1 and the second end plate 2 have a second preset region 13, and a second vent 14 is provided in the second preset region 13. The second preset region 13 is opposite to the region where the mounting space is located. By providing the second vent 14, airflow can flow from the end into the mounting space, so that the process gas flows evenly over the surface of the silicon wafer to fully react with the silicon wafer, thereby improving the sheet resistance and film thickness uniformity of the silicon wafer.

[0064] Optionally, the second vent 14 can be a regular-shaped hole such as a circular hole, a square hole, or a strip-shaped hole. In other embodiments, the second vent 14 can also be an irregularly shaped hole, as long as it can meet the ventilation requirements, and is not limited to the shapes listed above.

[0065] Optionally, the opening area of ​​the second vent 14 is S2, and the value of S2 is in the range of: S2≥0.7mm. 2 This size design allows the second vent 14 to have a sufficiently large ventilation area, ensuring uniform airflow.

[0066] For example, the second vent 14 is a circular hole with a diameter greater than or equal to 1 mm.

[0067] See Figure 4 Multiple second vents 14 are spaced apart within the second preset area 13. These second vents 14 are arranged in an array to evenly disperse the gas, making the airflow more stable and uniform. For example, two rows of second vents 14 are provided within the second preset area 13, with four vents 14 in each row.

[0068] Of course, in other embodiments, multiple second vent holes 14 may be arranged in a circular array within the second preset area 13, but are not limited to the arrangement methods listed above.

[0069] Example 3

[0070] This embodiment provides a silicon wafer diffusion device, which differs from Embodiments 1 and 2 in that:

[0071] Optionally, the support column 3 is provided with a hollow cavity extending along its extension direction, and the support column 3 is provided with multiple third vent holes at intervals along its extension direction, all of which are connected to the hollow cavity. Specifically, holes connecting to the hollow cavity are provided on both the first end plate 1 and the second end plate 2, allowing airflow to enter the hollow cavity of the support column 3. Simultaneously, the airflow within the hollow cavity can flow through the multiple third vent holes to the silicon wafer, ensuring that the airflow uniformly flows over the surface of each silicon wafer. This improves the sheet resistance uniformity and film thickness uniformity of the silicon wafer, ensuring product performance and the quality of subsequent products, thereby increasing product capacity and efficiency, and reducing production costs.

[0072] Example 4

[0073] This embodiment provides a gas source diffusion quartz boat, including the silicon wafer diffusion device as described in any of the above embodiments. Further, the gas source diffusion quartz boat also includes a boat support, in which the silicon wafer diffusion devices are placed together after the silicon wafers are loaded. Multiple silicon wafer diffusion devices can be placed in the boat support.

[0074] The air-source diffusion quartz boat provided in this application embodiment employs a silicon wafer diffusion device, which creates an airflow channel at the junction of two adjacent installation spaces during the diffusion process. This allows for more uniform airflow throughout the entire silicon wafer diffusion device, solving the problem of insufficient airflow between adjacent rows of silicon wafers. This improves the sheet resistance uniformity of the silicon wafers after the diffusion process and enhances the film thickness uniformity, thereby improving the performance of the silicon wafers and the quality of subsequent products, increasing product capacity and efficiency, and reducing production costs.

[0075] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments. Many other equivalent embodiments may be included without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A silicon wafer diffusion device, characterized in that, It includes a first end plate (1) and a second end plate (2), and a support column (3) is connected between the first end plate (1) and the second end plate (2). The support column (3) is arranged in multiple rows at intervals along a preset direction, and an installation space for accommodating silicon wafers is formed between each two adjacent rows of the support column (3). Both the first end plate (1) and the second end plate (2) have a first preset area (11), and a first vent (12) connecting the installation space is provided in the first preset area (11), and the first preset area (11) is opposite to the boundary area of ​​the two adjacent installation spaces.

2. The silicon wafer diffusion apparatus according to claim 1, characterized in that, The first ventilation hole (12) is located in the non-load-bearing area of ​​the first end plate (1) and the second end plate (2) within the first preset area (11).

3. The silicon wafer diffusion apparatus according to claim 1, characterized in that, Multiple first ventilation holes (12) are provided at intervals within the first preset area (11); The plurality of first vent holes (12) have the same shape; or, at least some of the plurality of first vent holes (12) have different shapes.

4. The silicon wafer diffusion apparatus according to claim 1, characterized in that, The first vent (12) is a regular hole or an irregular hole. When the first vent (12) is a regular hole, it includes at least one of a circular hole, an elliptical hole, a triangular hole, a strip hole, and a rectangular hole. When the first vent (12) is an irregular hole, it is designed as an irregular triangle, an irregular quadrilateral, or an irregular pentagon.

5. The silicon wafer diffusion apparatus according to any one of claims 1-4, characterized in that, The width of the first vent (12) is W, and the value of W is: W≥1mm.

6. The silicon wafer diffusion apparatus according to any one of claims 1-4, characterized in that, The opening area of ​​the first vent (12) is S1, and the value of S1 is in the range of: S1≥0.78mm. 2 .

7. The silicon wafer diffusion apparatus according to any one of claims 1-4, characterized in that, Both the first end plate (1) and the second end plate (2) have a second preset area (13), and a second vent (14) is provided in the second preset area (13). The second preset area (13) is opposite to the area where the installation space is located.

8. The silicon wafer diffusion apparatus according to any one of claims 1-4, characterized in that, The support column (3) is provided with a hollow cavity extending along its extension direction, and the support column (3) is provided with a plurality of third vent holes at intervals along its extension direction, and the plurality of third vent holes are all connected to the hollow cavity.

9. The silicon wafer diffusion apparatus according to any one of claims 1-4, characterized in that, The support column (3) is provided with a plurality of slots (31) spaced apart along its extension direction, and the edge of the silicon wafer can be locked in the slots (31).

10. The silicon wafer diffusion apparatus according to any one of claims 1-4, characterized in that, The silicon wafer diffusion device also includes a positioning structure (4) disposed on the support column (3), and the silicon wafer diffusion device is positioned and placed in the boat support that carries the silicon wafer diffusion device through the positioning structure (4).

11. A gas-source diffusion quartz boat, characterized in that, Includes the silicon wafer diffusion apparatus as described in any one of claims 1-10.

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