Light emitting diode electrode

CN310007791SActive Publication Date: 2026-05-29XIAMEN SILAN ADVANCED COMPOUND SEMICON CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Designs(China)
Current Assignee / Owner
XIAMEN SILAN ADVANCED COMPOUND SEMICON CO LTD
Filing Date
2025-12-08
Publication Date
2026-05-29

Smart Images

  • Figure 000005_ABST
    Figure 000005_ABST
Patent Text Reader

Abstract

1. The name of the design product: light emitting diode electrode. 2. The use of the design product: for the soldering pad and ohmic electrode of light emitting diode chip. 3. The design points of the design product: in shape. 4. The picture or photo that can best show the design points: design 1 top view. 5. Design 1 is designated as the basic design.
Need to check novelty before this filing date? Find Prior Art