Light-emitting diode with an active region consisting of a multiple quantum well structure

By using undoped InGaN and Si-doped GaN layers with varying thicknesses and band gaps in the active region, the LED addresses QCSE and carrier overflow, improving recombination rates and reducing control voltage, ensuring efficient operation under diverse conditions.

DE102008059151B4Active Publication Date: 2026-05-21SEOUL VIOSYS CO LTD
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Patent Information

Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
SEOUL VIOSYS CO LTD
Filing Date
2008-11-27
Publication Date
2026-05-21

AI Technical Summary

Technical Problem

Conventional LEDs using GaN-based compound semiconductors face issues such as reduced electron-hole recombination rates due to the Quantum Confined Stark Effect (QCSE) and carrier overflow, especially under high voltage or alternating current conditions, leading to decreased optical efficiency and increased control voltage.

Method used

Incorporating undoped InGaN layers and Si-doped GaN layers as barrier layers in the active region, with varying thicknesses and band gaps, to reduce QCSE and carrier overflow, thereby improving recombination rates and lowering control voltage.

Benefits of technology

The solution enhances electron-hole recombination, reduces QCSE, and maintains effective photometric properties under varying operating conditions, including high voltage and alternating current, while lowering the LED's control voltage.

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Abstract

Light-emitting diode (LED), with: a GaN-based N-type compound semiconductor layer (57, 157); a GaN-based P-type compound semiconductor layer (63, 161); and an active region (59, 89, 159) of a multi-quantum pot structure with alternating laminated InGaN pot layers (71, 171) and junction layers (74, 84a, 84b, 83c, 173, 175, 177, 179), wherein the active region (59, 89, 159) is arranged between the N-type and P-type compound semiconductor layers (57, 157, 63, 161), wherein at least one of the barrier layers (74, 84a, 84b, 83c, 173, 175, 177, 179) in the active region (59, 89, 159) has an InGaN barrier layer (73, 83a, 83b, 83c) and a Si-doped GaN barrier layer (75), a doping concentration of Si in the InGaN barrier layer (73, 83a, 83b, 83c) is lower than that of the Si-doped GaN barrier layer (75) and the Si-doped GaN barrier layer (75) is positioned closer to the P-type compound semiconductor layer (63, 161) than the InGaN barrier layer (73, 83a, 83b, 83c).
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