Package for die bridge capacitor

Abstract

Device comprising: a first lead frame segment (54A, 64A, 74A, 94A, 104A); a second lead frame segment (54B, 64B, 74B, 94B, 104B); a first transistor (52A, 62A, 72A, 92A, 102A), the first transistor (52A, 62A, 72A, 92A, 102A) having a first side electrically connected to the first leadframe segment (54A, 64A, 74A, 94A, 104A); a second transistor (52B, 62B, 72B, 92B, 102B), the second transistor (52B, 62B, 72B, 92B, 102B) having a first side electrically connected to the second leadframe segment (54B, 64B, 74B, 94B, 104B); a conductive element (58, 68, 78, 98, 108), wherein the conductive element (58, 68, 78, 98, 108) is electrically connected to a second side of the first transistor (52A, 62A, 72A, 92A, 102A) and a second side of the second transistor (52B, 62B, 72B, 92B, 102B), wherein the first transistor (52A, 62A, 72A, 92A, 102A) is arranged between the conductive element (58, 68, 78, 98, 108) and the first leadframe segment (54A, 64A, 74A, 94A, 104A), and the second transistor (52B, 62B, 72B, 92B, 102B) is arranged between the conductive element (58, 68, 78, 98, 108) and the second leadframe segment (54B, 64B, 74B, 94B, 104B); and a capacitor (56, 66, 76, 96, 106), wherein: the capacitor (56, 66, 76, 96, 106) is arranged on the first leadframe segment (54A, 64A, 74A, 94A, 104A) and the second leadframe segment (54B, 64B, 74B, 94B, 104B), wherein a space for the capacitor (56, 66, 76, 96, 106) is removed from the first leadframe segment (54A, 64A, 74A, 94A, 104A) and the second leadframe segment (54B, 64B, 74B, 94B, 104B), the capacitor (56, 66, 76, 96, 106) is arranged between the first transistor (52A, 62A, 72A, 92A, 102A) and the second transistor (52B, 62B, 72B, 92B, 102B), a first end of the capacitor (56, 66, 76, 96, 106) is electrically connected to the first leadframe segment (54A, 64A, 74A, 94A, 104A) and an input node, and a second end of the capacitor (56, 66, 76, 96, 106) is electrically connected to the second leadframe segment (54B, 64B, 74B, 94B, 104B).

Description

TECHNICAL FIELD

[0001] This disclosure relates to the formation of semiconductor packages and more specifically to semiconductor packages for power electronics. BACKGROUND

[0002] A half-bridge circuit can contain two analog devices or switches. Half-bridge circuits can be used in power supplies for motors, rectifiers, and power conversion. Each half-bridge circuit assembly has multiple contacts and can contain multiple conductive paths to connect the contacts to each other and to external components.

[0003] A half-bridge circuit can experience ringing if the circuit is too weakly damped. Ringing can occur approximately when one device in the half-bridge circuit closes and the other device opens. One method to minimize the effect of ringing is to reduce the turn-on periods of the devices. Another method to minimize ringing is to reduce the size of a half-bridge circuit package and implement a decoupling capacitor connected to the voltage input of the circuit board.

[0004] US 2014 / 0 167 822 A1 relates to a cascode circuit. US 2009 / 0 190 320 A1 relates to a semiconductor device with a passive component and semiconductor chips integrated in a housing. DE 10 2014 102 364 A1 relates to a multi-chip assembly with separate interconnections between chips. DE 11 2005 001 285 T5 relates to a semiconductor device module with flip-chip devices on a common lead frame. BRIEF DESCRIPTION OF THE INVENTION

[0005] The invention is defined in the independent claims. The dependent claims relate to advantageous developments.

[0006] The details of one or more examples are set forth in the accompanying drawings and the description below. Further features, objects, and advantages will be apparent from the description and drawings, and from the claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a circuit diagram of a half-bridge circuit including a capacitor between an input node and a reference node, according to some examples of this disclosure. Fig. 2 is a block diagram of a claimed device including a capacitor on a top-etched lead frame, according to some examples of this disclosure. Fig. 3 is a block diagram of a claimed device including a capacitor on a bottom etched lead frame, according to some examples of this disclosure. Fig. 4 is a graphical representation of a claimed device including a capacitor on a top-etched lead frame, according to some examples of this disclosure. Fig. 5 is a graphical representation of a device including a capacitor on a lead frame, according to some examples of this disclosure. Fig. 6 is a graphical representation of a claimed device including a capacitor on a bottom etched lead frame, according to some examples of this disclosure. Fig. 7 is a diagrammatic representation of a claimed device including a capacitor on a bottom etched lead frame, according to some examples of this disclosure. Fig. 8 is a diagrammatic representation of a side view of a device including a discrete capacitor on a lead frame, according to some examples of this disclosure. Fig. 9 is a graphical representation of a top view of a device including discrete capacitors on a lead frame, according to some examples of this disclosure. Fig. 10 is a block diagram of a device including an integrated capacitor according to some examples of this disclosure. Fig. 11 is a block diagram of a device including an integrated capacitor according to some examples of this disclosure. Fig. 12 is a flowchart illustrating a process of constructing a circuit according to some examples of this disclosure. Fig. 13 is a conceptual block diagram of a device circuit including two drain-down transistors, according to some examples of this disclosure. DETAILED DESCRIPTION

[0007] A half-bridge circuit may contain parasitic capacitances and parasitic inductances defined by the components and connections of the half-bridge circuit. A capacitor connected between the input voltage node and the reference voltage node can reduce the effect of parasitic effects on the half-bridge circuit. In some examples, the distance between each transistor of the half-bridge circuit and the capacitor can affect the effectiveness of the capacitor. In some examples, connecting the capacitor directly to the transistor leadframe segments can significantly improve the operation of the half-bridge circuit at high frequencies by reducing ringing and resonant spikes that can occur when switching between transistors.By reducing the impact of parasitic effects in the half-bridge circuit, the circuit can be designed to include transistors with lower breakdown voltages, lower resistances, and lower power consumption while maintaining or improving performance.

[0008] Fig. 1 is a circuit diagram of a half-bridge circuit including a capacitor 6 between an input node 8 and a reference node 16, according to some examples of this disclosure. In some examples, the power converter 2 may comprise a half-bridge DC-DC buck converter (half-bridge DC-DC buck converter) for converting an input DC signal into an output DC signal having a lower voltage. As a DC-DC buck converter, the power converter 2 may operate as a voltage regulator in various applications. As a DC-DC buck converter, a voltage amplitude of an input DC signal may be higher than a voltage amplitude of an output DC signal. However, the techniques of this disclosure may be applied to other circuits and configurations, such as other power converters, including multi-phase power converters.

[0009] The power converter 2 may include a device 4, which may include an integrated circuit (IC) or discrete components. The power converter 2 may include transistors 10A, 10B, an inductor 18, a capacitor 22, and a pulse width modulation controller and driver (PWM controller and driver) 12. In some examples, the power converter 2 may include more or fewer components than those shown in Fig. 1. The power converter 2 may include an input node 8, a reference node 16 and an output node 20 as well as other nodes that are Fig. 1 are not shown. Nodes 8, 16, 20 may be configured to connect to external components. For example, input node 8 may connect to an input voltage, such as a power supply, output node 20 may connect to an electronic device, and reference node 16 may connect to a reference voltage, such as a ground reference. In some examples, PWM controller and driver 12 may connect to an external circuit at a (in Fig. 1 knot (not shown).

[0010] Although in Fig. 1, a MOSFET symbol is shown as the transistors 10A, 10B, it is contemplated that any electrical device controlled by a voltage may be used in place of the MOSFET as shown. The transistors 10A, 10B may include, for example, but are not limited to, any type of field-effect transistor (FET), a bipolar transistor (BJT), an insulated-gate bipolar transistor (IGBT), a high electron mobility transistor (HEMT), a gallium nitride (GaN)-based transistor, or any other device that uses a voltage for its control.

[0011] Transistors 10A, 10B may comprise n-type transistors or p-type transistors, where transistors 10A, 10B may comprise vertical power transistors. For a vertical power transistor, the source and drain may be located on opposite sides or opposite surfaces of the transistor. Current in a vertical power transistor may flow through the transistor from top to bottom or bottom to top. In some examples, transistors 10A, 10B may include other analog devices, such as diodes. Transistors 10A, 10B may also include freewheeling diodes connected in parallel with the transistors to prevent reverse breakdown of transistors 10A, 10B. In some examples, transistors 10A, 10B may operate as switches or as analog devices.In still other examples, transistors 10 may include more than two transistors, such as in multi-phase power converters or other more complex power circuits. In a multi-phase power converter, power converter 2 may, for example, include a high-side transistor and a low-side transistor for each phase. Therefore, a multi-phase power converter may include one or more copies of power converter 2, as shown in FIG. Fig. 1 is shown.

[0012] Fig. 1 illustrates transistors 10A, 10B with three terminals: drain (D), source (S), and gate (G). A current may flow between the drain and source of transistors 10A, 10B based on the voltage at the gate. The current may flow from input node 8 through the drain and source of transistor 10A to switching node 14 based on the voltage at the gate of transistor 10A. The current may flow from switching node 14 through the drain and source of transistor 10B to reference node 16 based on the voltage at the gate of transistor 10B. Transistor 10A may comprise a high-side transistor, while transistor 10B may comprise a low-side transistor because transistor 10B is connected to reference node 16.

[0013] Transistors 10A, 10B may comprise various material compositions, such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), or any other combination of one or more semiconductor materials. To take advantage of higher power density requirements in some circuits, the power converters may operate at higher frequencies. Improvements in magnetism and faster switching, such as gallium nitride (GaN) switches, may support higher frequency converters. These higher frequency circuits may require control signals to be sent with more precise timing than for lower frequency circuits.

[0014] The PWM controller and driver 12 can supply signals and / or voltages to the control terminals of the transistors 10A, 10B. Fig. 1 illustrates the PWM controller and driver 12 as a single component, but the PWM control circuitry and driver circuitry may be separate components. In some examples, the PWM controller and driver 12, only the PWM control circuitry, or only the driver circuitry may be located outside the power converter 2 or outside the device 4.

[0015] The inductor 18 may comprise an optional coil inductor located external to the device 4. The inductor 18 may be connected to the switching node 14 and the output node 20. The inductor 18 may impede the flow of alternating current (AC) electricity while allowing DC electricity to flow between the switching node 14 and the output node 20.

[0016] The capacitors 6, 22 may comprise discrete capacitors, integrated silicon capacitors, film capacitors, electrolytic capacitors, ceramic capacitors, or any other suitable type of capacitor. The capacitor 6 may be located within the device 4, while the capacitor 22 may be an optional component in the power converter 2 outside the device 4. A first end of the capacitor 6 may be electrically connected to the input node 8, while a second end of the capacitor 6 may be electrically connected to the reference node 16, wherein the capacitor 22 may be connected to the output node 20 and the reference node 16. The capacitors 6, 22 may impede the flow of DC electricity while allowing AC electricity to flow between the nodes.The capacitor 22 may act as a smoothing capacitor for the voltage at the output node 20 to mitigate the fluctuations in the voltage at the output node 20.

[0017] Capacitor 6, according to the techniques of this disclosure, may reduce ringing in loop 24, which includes input node 8, transistors 10A, 10B, switching node 14, and reference node 16. Ringing may be due to parasitic capacitances and parasitic inductances throughout device 4, such as at switching node 14 between transistors 10A, 10B. To remove parasitic inductances at switching node 14, capacitor 6 may be connected to the drain of transistor 10A and the source of transistor 10B. In some examples, the effectiveness of capacitor 6 in canceling parasitic effects may be based on the distance from the drain of transistor 10A through capacitor 6 to the source of transistor 10B.By reducing the size of the loop 24, the capacitor 6 can reduce or eliminate ringing at the switching node 14, thereby allowing, in some examples, faster switching speeds and lower power consumption for the device 4 and the power converter 2.

[0018] By reducing the parasitic effects in device 4, transistors 10A, 10B can be designed with lower breakdown voltages because the resonant voltage spikes during switching can be reduced or eliminated. At lower breakdown voltages, transistors 10A, 10B can have lower drain-source resistances when each transistor is closed or conducting current. The lower drain-source resistances can improve the performance of transistors 10A, 10B and allow transistors 10A, 10B to conduct more current at the same voltages. The lower drain-source resistances can also reduce the power consumption of transistors 10A, 10B.

[0019] Fig. Figure 2 is a block diagram of a claimed device 50 including a capacitor 56 on a top-etched lead frame 54A, 54B, according to some examples of this disclosure. The device 50 may be implemented in a manner similar to that shown in Fig. 1, the device 4 may operate as a half-bridge circuit. Transistors 52A, 52B may comprise discrete vertical transistors, such as vertical power FETs. Current may move from one side of each of transistors 52A, 52B to an opposite side of transistors 52A, 52B.

[0020] Transistors 52A, 52B may each have a control terminal and two load terminals. Each of the load terminals of transistors 52A, 52B may include a pad or area on the surface of transistors 52A, 52B to form external electrical connections. Transistor 52A may be connected in a manner similar to transistor 10A. Fig. 1 similar manner as a high-side transistor, while the transistor 52B operates in a manner similar to the transistor 10B in Fig. 1 may operate similarly as a low-side transistor. In some examples, transistors 52A, 52B may be MOSFETs, BJTs, IGBTs, and / or any suitable type of transistor. If transistors 52A, 52B are bipolar transistors, each control terminal may be a base, while the load terminals may be the emitters and collectors.

[0021] Transistors 52A, 52B may be electrically connected to a conductive element 58, which may act as a switching node. Conductive element 58 may comprise a metallization layer, a clip, a ribbon, a die paddle, a wire bond, a copper pillar, a via through silicon, and / or any other suitable conductive material. Transistor 52A may also be electrically connected to a leadframe segment 54A, while transistor 52B may be electrically connected to a leadframe segment 54B. Capacitor 56 may also be electrically connected to leadframe segments 54A and / or 54B. Conductive element 58 may be electrically connected to leadframe segment 54C. Leadframe segments 54A, 54B, 54C may comprise die paddles, metallization layers, and / or any other suitable conductive material.In some examples, device 50 may include embedded metal layers in addition to or instead of the leadframe segments, such as in a radio frequency melting device. The embedded layers may include copper and / or any other suitable conductive material.

[0022] In some examples, the electrical connections between transistors 52A, 52B and conductive element 58, and between transistors 52A, 52B and leadframe segments 54A, 54B, may be formed by soldering. The electrical connections between capacitor 56 and leadframe segments 54A, 54B may also be formed by soldering. Soldering components to form electrical connections may include disposing solder between the components, applying heat to melt the solder, and allowing the solder to cool to form the electrical connection. The components of device 50 may also be bonded or glued together using a conductive paste, conductive tape, conductive epoxy, and / or metal sintering. The connections between the transistors 52A, 52B, the lead frame segments 54A, 54B, the conductive element 58 (which is Fig. 2 as hatched layers) may include metallized plated laser vias, solder, and / or high-pressure / high-frequency metal bonding, such as diffusion bonding. Diffusion bonding may include direct bonding between the transistors 52A, 52B, each of which may be a semiconductor die, and the leadframe segments 54A, 54B and the conductive element 58.

[0023] In some examples, device 50 may be fully or partially encapsulated in a molding compound and / or any other suitable insulating material. Transistors 52A, 52B, leadframe segments 54A, 54B, 54C, and capacitor 56 may be fully encapsulated, while conductive element 58 may be partially encapsulated to allow heat dissipation and / or electrical connection between conductive element 58 and an external device. In some examples, capacitor 56 may be partially encapsulated to allow external electrical connections and / or heat dissipation. The Fig. The devices illustrated in Figures 2-11 may implement soldering, gluing, and / or encapsulation as described herein.

[0024] Capacitor 56 may be electrically connected to leadframe segments 54A, 54B. Capacitor 56 may include one or more capacitors connected in parallel to operate similarly to a single capacitor. A first end of each capacitor of capacitor 56 may be electrically connected to leadframe segment 54B, while a second end of each capacitor of capacitor 56 may be electrically connected to leadframe segment 54A.

[0025] Each of the leadframe segments 54A, 54B may be etched, cut, and / or drilled to remove a space for the capacitor 56 to be positioned on each of the leadframe segments 54A, 54B. The leadframe segments 54A, 54B may be referred to as "top-etched" because the etching, cutting, or drilling may remove more from the upper portions of the leadframe segments 54A, 54B than from the lower portions of the leadframe segments 54A, 54B, as shown in Fig. 2. The leadframe segments 54A, 54B may also be referred to as “adjacent etched” because the upper portion of the leadframe segments 54A, 54B is adjacent to the transistors 52A, 52B, and the lower portion of the leadframe segments 54A, 54B is opposite the transistors 52A, 52B, as shown in Fig. 2. The capacitor 56 is partially positioned between the transistors 52A, 52B such that a portion of the capacitor 56 extends into the space between the transistors 52A, 52B.

[0026] Capacitor 56 can reduce ringing on conductive element 58 during transitions when one of transistors 52A, 52B opens and the other of transistors 52A, 52B closes. The effectiveness of capacitor 56 between leadframe segments 54A, 54B can be based on the circumference of loop 57, which includes capacitor 56, leadframe segments 54A, 54B, transistors 52A, 52B, and conductive element 58. By positioning capacitor 56 between transistors 52A, 52B, device 50 can reduce distance 55 and the circumference of loop 57. In some examples, loop 57 may include a distance from transistor 52A through leadframe segment 54A, capacitor 56, and leadframe segment 54B to transistor 52B that is less than or equal to about one millimeter.A distance in the loop 57 can be measured by tracing an electrical path through each of the components in the loop 57.

[0027] Fig. Figure 3 is a block diagram of a claimed device 60 including a capacitor 66 on a bottom-etched lead frame 64, according to some examples of this disclosure. The device 60 may be implemented in a manner similar to that shown in Fig. 1, as a half-bridge circuit. Transistors 62A, 62B may be electrically connected to a conductive element 68, which may act as a switching node. Transistor 62A may also be electrically connected to a leadframe segment 64A, while transistor 62B may be electrically connected to a leadframe segment 64B.

[0028] The capacitor 66 may be electrically connected to the leadframe segments 64A, 64B. Each of the leadframe segments 64A, 64B may be etched, cut, and / or drilled to remove a space to position the capacitor 66 on the bottom of each of the leadframe segments 64A, 64B. The leadframe segments 64A, 64B may be referred to as "bottom etched" because the etching, cutting, or drilling may remove more from the lower portions of the leadframe segments 64A, 64B than from the upper portions of the leadframe segments 64A, 64B, as shown in Fig. 3. The leadframe segments 64A, 64B may also be referred to as “opposite etched” because the upper portion of the leadframe segments 64A, 64B is adjacent to the transistors 62A, 62B and the lower portion of the leadframe segments 64A, 64B is opposite the transistors 62A, 62B, as shown in Fig. 3. For devices including bottom-etched leadframe segments 64A, 64B and possibly other devices, soldering may include double-sided reflow to form the electrical connections for capacitor 66.

[0029] In some examples, each of the leadframe segments 64A, 64B may have a thickness greater than one hundred micrometers and less than about three hundred micrometers. The thickness of the capacitor 66 may be greater than one hundred micrometers and less than about two hundred micrometers. The thickness of a component may be measured in a vertical direction, as shown in Fig. 3. In some examples, a distance from transistor 62A to the end of capacitor 66 electrically connected to leadframe segment 64A may be less than about four hundred micrometers. A distance from transistor 62B to the end of capacitor 66 electrically connected to leadframe segment 64B may be less than about four hundred micrometers. In some examples, the distance may be as small as one hundred micrometers for half-etched two-hundred-micrometer leadframes. The distance from one of transistors 62A, 62B to an end of capacitor 66 may be measured by tracing an electrical path through loop 67, which may include one of leadframe segments 64A, 64B. A short distance from each of transistors 62A, 62B to the ends of capacitor 66 may reduce the effect of parasitic effects in loop 67.The distances described here can be used for the devices in each of the . Fig. 2-11 apply. As used here, "approximately" can indicate a tolerance of ten percent for distances and dimensions.

[0030] In some examples, each of the lead frame segments 64A, 64B may be configured to be connected to an optional printed circuit board (PCB) or an optional printed wiring board (PWB) (described in Fig. 3 are not shown). The capacitor 66 may be configured to be attached to the PCB or PWB. The leadframe segments 64A, 64B and the capacitor 66 may be electrically connected to the conductive traces on the PCB or PWB.

[0031] The capacitor 66 may reduce the ringing on the conductive element 68 during transitions when one of the transistors 62A, 62B opens and the other of the transistors 62A, 62B closes. The effectiveness of the capacitor 66 between the leadframe segments 64A, 64B may be based on the circumference of the loop 67, which includes the capacitor 66, the leadframe segments 64A, 64B, the transistors 62A, 62B, and the conductive element 68. By positioning the capacitor 66 between the transistors 62A, 62B, the device 60 may reduce the distance 65 and the circumference of the loop 67. In some examples, the distance 65 may be shorter than that shown in Fig. 2 and the circumference of the loop 67 may be shorter than that shown in Fig. 3. Loop 67 may contain an inductance of less than about three hundred nanofarads.

[0032] In some examples, loop 67 may include a distance from transistor 62A through leadframe segment 64A, capacitor 66, and leadframe segment 64B to transistor 62B that is less than or equal to about one millimeter. A distance in loop 67 may be measured by tracing an electrical path through each of the components in loop 67. The distances described herein may be different for the devices in each of the Fig. 2-11 apply.

[0033] Fig. Figure 4 is a diagrammatic representation of a claimed device 70 including a capacitor 76 on a top-etched lead frame 74, according to some examples of this disclosure. The device 70 may be in a configuration similar to that shown in Fig. 1, as a half-bridge circuit. Transistors 72A, 72B may be electrically connected to a conductive element 78, which may act as a switching node. Transistor 72A may also be electrically connected to a leadframe segment 74A, while transistor 72B may be electrically connected to a leadframe segment 74B.

[0034] The capacitor 76 may be electrically connected to the leadframe segments 74A, 74B. Electrically connecting one end of the capacitor 76 to one of the leadframe segments 74A, 74B may include etching a portion of one or both of the leadframe segments 74A, 74B. The leadframe segments 74A, 74B may be referred to as "top-etched" because the etching, cutting, or drilling may remove more from the lower portions of the leadframe segments 74A, 74B than from the upper portions of the leadframe segments 74A, 74B, as shown in Fig. 4. The leadframe segments 74A, 74B may also be referred to as “adjacent etched” because the upper portion of the leadframe segments 74A, 74B is adjacent to the transistors 72A, 72B and the lower portion of the leadframe segments 74A, 74B is opposite the transistors 72A, 72B, as shown in Fig. 4. The capacitor 76 is partially positioned between the transistors 72A, 72B such that a portion of the capacitor 76 extends into the space between the transistors 72A, 72B.

[0035] Fig. Figure 5 is a graphical representation of a device 80 including a capacitor 86 on a lead frame 84, according to some examples of this disclosure. The device 80 may be configured in a manner similar to that shown in Fig. 1. Transistors 82A, 82B may operate as a half-bridge circuit in a manner similar to device 4 shown in FIG. 1. Transistors 82A, 82B may be electrically connected to conductive element 88, which may act as a switching node. Transistor 82A may also be electrically connected to leadframe segment 84A, while transistor 82B may be electrically connected to leadframe segment 84B. Capacitor 86 may be electrically connected to leadframe segments 84A, 84B, 84D, 84E. Leadframe segments 84A, 84B may be referred to as "top etched" and / or "bottom etched" because etching, cutting, or drilling may remove lower portions and upper portions of leadframe segments 84A, 84B, as shown in FIG. Fig. 5. As shown in Fig. 5, a distance between one of the transistors 82A, 82B and one end of the capacitor 86 may include an electrical path that does not necessarily include one of the lead frame segments 84A, 84B.

[0036] Fig. Figure 6 is a diagrammatic representation of a claimed device including a capacitor 96 on a bottom-etched lead frame 94, according to some examples of this disclosure. The device 90 may be in a configuration similar to that shown in Fig. 1. Transistors 92A, 92B may be electrically connected to a conductive element 98, which may act as a switching node. Transistor 92A may also be electrically connected to a leadframe segment 94A, while transistor 92B may be electrically connected to a leadframe segment 94B. Capacitor 96 may be electrically connected to transistors 92A, 92B and leadframe segments 94A, 94B. Leadframe segments 94A, 94B may be referred to as "bottom etched" because the etching, cutting, or drilling may remove more from the lower portions of leadframe segments 94A, 94B than from the upper portions of leadframe segments 94A, 94B, as shown in Fig. 6. The leadframe segments 94A, 94B may also be referred to as “opposite etched” as shown in Fig. 6 is shown.

[0037] Fig. Figure 7 is a diagrammatic representation of a claimed device including a capacitor 106 on a bottom-etched lead frame 104, according to some examples of this disclosure. The device 100 may be in a configuration similar to that shown in Fig. 1, the device 4 may operate as a half-bridge circuit. The transistors 102A, 102B may be electrically connected to a conductive element 108, which may act as a switching node. The transistor 102A may also be electrically connected to a leadframe segment 104A, while the transistor 102B may be electrically connected to a leadframe segment 104B. The capacitor 106 may be electrically connected to the leadframe segments 104A, 104B. The leadframe segments 104A, 104B may be referred to as "bottom etched" because the etching, cutting, or drilling may remove more from the lower portions of the leadframe segments 104A, 104B than from the upper portions of the leadframe segments 104A, 104B, as in Fig. 7. The leadframe segments 104A, 104B may also be referred to as “opposite etched,” as shown in Fig. 7 is shown.

[0038] Capacitor 106 may be electrically connected to transistors 102A, 102B through conductive paths 110A, 110B. In some examples, conductive paths 110A, 110B may be preformed through leadframe segments 104A, 104B by first creating a hole in each of leadframe segments 104A, 104B and then disposing or forming conductive paths 110A, 110B in the respective holes of leadframe segments 104A, 104B. The conductive paths 110A, 110B may be formed by drilling, etching, or cutting a hole or path through the leadframe segments 104A, 104B and filling the hole or path with a conductive material, such as copper or solder, through the leadframe segments 104A, 104B. The conductive paths 110A, 110B may comprise the same conductive materials as the respective source or drain of the transistors 102A, 102B and / or any other suitable conductive material.By using the same conductive material as the respective terminals of transistors 102A, 102B, the connection between conductive paths 110A, 110B and transistors 102A, 102B and capacitor 106 may not require soldering.

[0039] Fig. Figure 8 is a diagrammatic representation of a side view of a device 120 including a discrete capacitor 126A on a lead frame 128, according to some examples of this disclosure. The device 120 may be configured in a manner similar to that shown in Fig. The device 4 shown in Figure 1 may operate as a half-bridge circuit. Transistors 122A, 122B may be electrically connected to a conductive element 128, which may act as a switching node. Transistor 122A may also be electrically connected to a leadframe segment 124A, while transistor 122B may be electrically connected to a leadframe segment 124B. Capacitor 126A may be electrically connected to leadframe segments 124A, 124B.

[0040] Fig. Figure 9 is a graphical representation of a top view of a device 120 including discrete capacitors 126A-126E on a lead frame 128, according to some examples of this disclosure. The device 120 may be configured in a manner similar to that shown in Fig. 1, as a half-bridge circuit. Capacitors 126A-126E may operate in parallel in a manner similar to a single capacitor. Positioning capacitors 126A-126E in parallel may increase the effective width and capacitance of an equivalent capacitor.

[0041] Fig. 10 is a block diagram of a device 130 including an integrated capacitor 136, according to some examples of this disclosure. The device 130 may be implemented in a manner similar to that shown in Fig. 1. Transistors 132A, 132B may operate as a half-bridge circuit similar to device 4 illustrated in FIG. 1. Transistors 132A, 132B may be electrically connected to a conductive element 138, which may act as a switching node. Transistor 132A may also be electrically connected to a leadframe segment 134A, while transistor 132B may be electrically connected to a leadframe segment 134B. Integrated capacitor 136 may be electrically connected to leadframe segments 134A, 134B. Transistor 132B and integrated capacitor 136 may comprise a single piece of semiconductor material, such as silicon, and may be referred to as an IC. In some examples, integrated capacitor 136 may provide advantages such as smaller space, fewer components, and reduced parasitic effects.

[0042] Fig. Figure 11 is a block diagram of a device 140 including an integrated capacitor 146, according to some examples of this disclosure. The device 140 may be implemented in a manner similar to that shown in Fig. 1. Transistors 142A, 142B may operate as a half-bridge circuit similar to device 4 illustrated in FIG. 1. Transistors 142A, 142B may be electrically connected to a conductive element 148, which may act as a switching node. Transistor 142A may also be electrically connected to leadframe segment 144A, while transistor 142B may be electrically connected to leadframe segment 144B. Integrated capacitor 146 may be electrically connected to leadframe segments 144A, 144B. Transistor 142A and integrated capacitor 146 may comprise a single piece of semiconductor material, such as silicon, and may be referred to as an IC. In some examples, integrated capacitor 146 may provide advantages such as smaller space, fewer components, and reduced parasitic effects.The integrated capacitor 146 may operate differently than the integrated capacitor 136 based on whether the capacitor is integrated with a source-down transistor or a drain-down transistor. In some examples, the integrated capacitor 146 may be more effective at reducing parasitic effects in the device 140 than the integrated capacitor 136 may be at reducing parasitic effects in the device 130 because the integrated capacitor 146 is integrated with a source-down transistor 142A.

[0043] For the devices in any of the Fig. 2-11, the transistor dies may have a thickness of about sixty micrometers. In some examples, the transistor dies may be thicker or thinner depending on the application. The capacitor may have a height or thickness of about one hundred micrometers or one hundred and fifty micrometers and a length of about three hundred micrometers. Each leadframe segment may have a thickness of about two hundred micrometers or two hundred and fifty micrometers. A thicker leadframe segment may allow more etching to form a position for the capacitor, but thicker leadframe segments may be more expensive. For example, a half-etch may remove one hundred micrometers or one hundred and fifty micrometers of thickness from the leadframe segment. The dimensions described herein may be exemplary and are not intended to limit this disclosure to any particular application or applications.

[0044] For the devices in any of the Fig. 2-11, the transistors may contain control terminals, such as gate terminals. In the Fig. 2-11, the control terminals for the transistors may not be shown, but the control terminals may be electrically connected to internal devices or external devices. The control terminals may be electrically connected to one or more driver circuits that generate signals to control the operation of the transistors. The one or more driver circuits may be located inside or outside the devices according to the Fig. 2-11 positioned.

[0045] Fig. 12 is a flowchart illustrating a process 170 for constructing a circuit according to some examples of this disclosure. The process 170 is described with respect to the device 50 in Fig. 2, although other components such as devices 60, 70, 80, 90, 100, 120, 130 and 140 in the Fig. 2-11 can illustrate similar techniques.

[0046] The process 170 includes electrically connecting the first transistor 52A to the first leadframe segment 54A (172). The first transistor 52A may comprise a vertical high-side power FET with an upward-facing high-side source terminal and a downward-facing high-side drain terminal. The drain terminal of the first transistor 52A may be electrically connected to the first leadframe segment 54A. The first leadframe segment 54A may comprise an input voltage node.

[0047] The process 170 further includes electrically connecting the second transistor 52B to the first leadframe segment 54B (174). The second transistor 52B may comprise a vertical low-side power FET with a downward-facing low-side source terminal and an upward-facing low-side drain terminal. The source terminal of the second transistor 52B may be electrically connected to the second leadframe segment 54B. The second leadframe segment 54B may comprise a reference voltage node.

[0048] The process 170 further includes electrically connecting the conductive element 58 to the first transistor 52A and the second transistor 52B (176). The high-side source terminal of the first transistor 52A may be electrically connected to the conductive element 58. The low-side drain terminal of the first transistor 52A may be electrically connected to the conductive element 58. In some examples, the conductive element 58 may act as a switching node in a half-bridge circuit configuration.

[0049] The process 170 further includes electrically connecting a first end of the capacitor 56 to the first leadframe segment 54A (178). The first end of the capacitor 56 may include a high-side of the capacitor 56 that is electrically connected to an input voltage node. The first leadframe segment 54A may be top-etched if the etching, cutting, or drilling removes more of the top portion of the first leadframe segment 54A than the top portion of the first leadframe segment 54A.

[0050] The process 170 further includes electrically connecting a second end of the capacitor 56 to the second leadframe segment 54B (180). The second end of the capacitor 56 may include a low-side of the capacitor 56 electrically connected to a reference voltage node. The second leadframe segment 54B may be top-etched if the etching, cutting, or drilling removes more of the top portion of the second leadframe segment 54B than the top portion of the second leadframe segment 54B.

[0051] Loop 57 may include capacitor 56, leadframe segments 54A, 54B, transistors 52A, 52B, and conductive element 58. The parasitic effects of loop 57 may be based at least in part on the length of the circumference of loop 57. Shortening the circumference of loop 57 may reduce the impact of the parasitic effects on the operation of device 50. In some examples, a distance between the high-side drain terminal of transistor 52A and the high-side of capacitor 56 may be less than about four hundred micrometers. In some examples, a distance between the low-side source terminal of transistor 52B and the low-side of capacitor 56 may be less than about four hundred micrometers.

[0052] With the reduced parasitic effects in device 4, transistors 10A, 10B can be designed with lower breakdown voltages. Due to the lower breakdown voltages, transistors 10A, 10B can have lower drain-source resistances when each transistor is turned on. The lower drain-source resistances can improve the performance of transistors 10A, 10B by allowing transistors 10A, 10B to conduct more current at the same voltages. The lower drain-source resistances can also reduce the power consumption of transistors 10A, 10B.

[0053] Fig. 13 is a conceptual block diagram of another device 244 including two drain-down transistors 230, 232, according to some examples of this disclosure. Transistors 230, 232 may each have a control terminal, such as gate terminals 230G, 232G, that are connected to drive signals 234A, 234B from a (in Fig. 2 not shown) driver circuit. Each of the transistors 230, 232 may include two load terminals, such as the source terminals 230S, 232S and the drain terminals 230D, 232D. The high-side transistor 230 may be connected in a manner similar to the transistor 10A in Fig. 1 similar manner, while the low-side transistor 232 operates in a manner similar to the transistor 10B in Fig. 1. In some examples, transistors 230, 232 may be MOSFETs, BJTs, IGBTs, and / or any suitable type of transistor. Transistors 230, 232 may be configured such that source terminal 230S is electrically connected to drain terminal 232D through switching node 238.

[0054] The capacitor 242 may reduce the ringing at the switching node 238 during transitions when one of the transistors 230, 232 opens and the other transistor closes. The effectiveness of the capacitor 242 between the input node 236 and the reference node 240 may be based on the circumference of the loop 246, which includes the capacitor 242, the input node 236, the high-side transistor 230, the switching node 238, the low-side transistor 232, and the reference node 240. By implementing two drain-down transistors 230, 232, the loop 246 may have a longer circumference and may have more ringing than the loops in the Fig. 2-11. Therefore, capacitor 242 and device 244 may be less effective in reducing ringing at switching node 238 than the devices shown in Fig. 2-11 shown devices.

[0055] The following numbered examples demonstrate one or more aspects of the revelation.

[0056] Example 1. A device comprises a first leadframe segment, a second leadframe segment, and a first transistor, wherein the first transistor is electrically connected to the first leadframe segment. The device further comprises a second transistor, wherein the second transistor is electrically connected to the second leadframe segment. The device further comprises a conductive element, wherein the conductive element is electrically connected to the first transistor and the second transistor. The device further comprises a capacitor, wherein a first end of the capacitor is electrically connected to the first leadframe segment and a second end of the capacitor is electrically connected to the second leadframe segment.

[0057] Example 2. The device of Example 1, further comprising an integrated circuit comprising the capacitor and the first transistor, wherein a drain terminal of the first transistor is electrically connected to the first leadframe segment. A source terminal of the first transistor is electrically connected to the conductive element, a drain terminal of the second transistor is electrically connected to the conductive element, a source terminal of the second transistor is electrically connected to the second leadframe segment, and the conductive element comprises a clip or a wire.

[0058] Example 3. The device of any combination of Examples 1-2, wherein the capacitor comprises at least one discrete capacitor, a first end of each capacitor of the at least one discrete capacitor is electrically connected to the first leadframe segment, and a second end of each capacitor of the at least one discrete capacitor is electrically connected to the second leadframe segment.

[0059] Example 4. The device of any combination of Examples 1-3, wherein the first leadframe segment is configured to be attached to a PCB, the second leadframe segment is configured to be attached to the PCB, and the capacitor is configured to be attached to the PCB.

[0060] Example 5. The device of any combination of Examples 1-4, wherein a distance from the first transistor through the first leadframe segment, the capacitor, and the second leadframe segment to the second transistor is less than or equal to about one millimeter.

[0061] Example 6. The device of any combination of Examples 1-5, further comprising an electrical loop comprising the first transistor, the first leadframe segment, the capacitor and the second leadframe segment, the second transistor, and the conductive element, wherein an inductance of the electrical loop is less than about three hundred nanofarads.

[0062] Example 7. The device of any combination of Examples 1-6, wherein a thickness of the first leadframe segment is greater than one hundred micrometers and less than about three hundred micrometers, a thickness of the second leadframe segment is greater than one hundred micrometers and less than about three hundred micrometers, and a thickness of the capacitor is greater than one hundred micrometers and less than about two hundred micrometers.

[0063] Example 8. The device of any combination of Examples 1-7, wherein a distance from the first transistor to the first end of the capacitor is less than about four hundred micrometers and a distance from the second transistor to the second end of the capacitor is less than about four hundred micrometers.

[0064] Example 9. A method includes electrically connecting a first transistor to a first leadframe segment and electrically connecting a second transistor to a second leadframe segment. The method further includes electrically connecting a conductive element to the first transistor and the second transistor. The method further includes electrically connecting a first end of a capacitor to the first leadframe segment and electrically connecting a second end of the capacitor to the second leadframe segment.

[0065] Example 10. The method of Example 9, wherein electrically connecting the first end of the capacitor to the first leadframe segment comprises etching a portion of the first leadframe segment adjacent to the first transistor; and electrically connecting the second end of the capacitor to the second leadframe segment comprises etching a portion of the second leadframe segment adjacent to the second transistor.

[0066] Example 11. The method of any combination of examples 9 and 10, wherein electrically connecting the first end of the capacitor to the first leadframe segment comprises etching a portion of the first leadframe segment opposite the first transistor; and electrically connecting the second end of the capacitor to the second leadframe segment comprises etching a portion of the second leadframe segment opposite the second transistor.

[0067] Example 12. The method of any combination of Examples 9-11, forming a first conductive path through the first leadframe segment; and forming a second conductive path through the second leadframe segment, wherein electrically connecting the first end of the capacitor to the first leadframe segment further comprises electrically connecting the first end of the capacitor to the first conductive path, and electrically connecting the second end of the capacitor to the second leadframe segment further comprises electrically connecting the second end of the capacitor to the second conductive path.

[0068] Example 13. The method of any combination of Examples 9-12, wherein the first conductive path comprises solder and the second conductive path comprises solder.

[0069] Example 14. The method of any combination of Examples 9-13, encapsulating the first transistor, the second transistor, the first leadframe segment, the second leadframe segment, and the conductive element in a molding compound, and partially encapsulating the capacitor in the molding compound.

[0070] Example 15. The method of any combination of Examples 9-14, further comprising attaching the first leadframe segment to a printed circuit board (PCB) and attaching the second leadframe segment to the PCB; and attaching the capacitor to the PCB.

[0071] Example 16. The method of any combination of Examples 9-15, wherein electrically connecting the first transistor to the first leadframe segment comprises soldering the first transistor to the first leadframe segment, and electrically connecting the second transistor to the second leadframe segment comprises soldering the second transistor to the second leadframe segment. Electrically connecting the conductive element to the first transistor and the second transistor comprises soldering the conductive element to the first transistor and the second transistor, and electrically connecting the first end of the capacitor to the first leadframe segment comprises soldering the first end of the capacitor to the first leadframe segment. Electrically connecting a second end of the capacitor to the second leadframe segment comprises soldering the second end of the capacitor to the second leadframe segment.

[0072] Example 17. The method of any combination of Examples 9-16, wherein a first distance between the first transistor and the first end of the capacitor is less than about four hundred micrometers; and a second distance between the second transistor and the second end of the capacitor is less than about four hundred micrometers.

[0073] Example 18. The method of any combination of Examples 9-17, wherein a distance from the first transistor through the first leadframe segment, the capacitor, and the second leadframe segment to the second transistor is less than or equal to about one millimeter.

[0074] Example 19. A power converter device comprises an input voltage leadframe segment, a reference voltage leadframe segment, and a high-side transistor, wherein a high-side drain terminal of the high-side transistor is electrically connected to the input voltage leadframe segment. The power converter device further comprises a low-side transistor, wherein a low-side source terminal of the low-side transistor is electrically connected to the reference voltage leadframe segment. The power converter device further comprises a conductive element, wherein the conductive element is electrically connected to a high-side source terminal of the high-side transistor and a low-side drain terminal of the low-side transistor.The power converter device further comprises a capacitor, wherein a high-side of the capacitor is electrically connected to the input voltage leadframe segment, a low-side of the capacitor is electrically connected to the reference voltage leadframe segment, and a first distance between the high-side drain terminal and the high-side of the capacitor is less than about four hundred micrometers. The power converter device further comprises a second distance between the low-side source terminal and the low-side of the capacitor, which is less than about four hundred micrometers.

[0075] Example 20. The power converter device of Example 19, further comprising an integrated circuit including the capacitor and the low-side transistor, wherein a third distance between the high-side transistor and the integrated circuit is less than two hundred micrometers.

Claims

[1] Device comprising: a first lead frame segment (54A, 64A, 74A, 94A, 104A); a second lead frame segment (54B, 64B, 74B, 94B, 104B); a first transistor (52A, 62A, 72A, 92A, 102A), the first transistor (52A, 62A, 72A, 92A, 102A) having a first side electrically connected to the first leadframe segment (54A, 64A, 74A, 94A, 104A); a second transistor (52B, 62B, 72B, 92B, 102B), the second transistor (52B, 62B, 72B, 92B, 102B) having a first side electrically connected to the second leadframe segment (54B, 64B, 74B, 94B, 104B); a conductive element (58, 68, 78, 98, 108), wherein the conductive element (58, 68, 78, 98, 108) is electrically connected to a second side of the first transistor (52A, 62A, 72A, 92A, 102A) and a second side of the second transistor (52B, 62B, 72B, 92B, 102B), wherein the first transistor (52A, 62A, 72A, 92A, 102A) is arranged between the conductive element (58, 68, 78, 98, 108) and the first leadframe segment (54A, 64A, 74A, 94A, 104A), and the second transistor (52B, 62B, 72B, 92B, 102B) is arranged between the conductive element (58, 68, 78, 98, 108) and the second leadframe segment (54B, 64B, 74B, 94B, 104B); and a capacitor (56, 66, 76, 96, 106), wherein: the capacitor (56, 66, 76, 96, 106) is arranged on the first leadframe segment (54A, 64A, 74A, 94A, 104A) and the second leadframe segment (54B, 64B, 74B, 94B, 104B), wherein a space for the capacitor (56, 66, 76, 96, 106) is removed from the first leadframe segment (54A, 64A, 74A, 94A, 104A) and the second leadframe segment (54B, 64B, 74B, 94B, 104B), the capacitor (56, 66, 76, 96, 106) is arranged between the first transistor (52A, 62A, 72A, 92A, 102A) and the second transistor (52B, 62B, 72B, 92B, 102B), a first end of the capacitor (56, 66, 76, 96, 106) is electrically connected to the first leadframe segment (54A, 64A, 74A, 94A, 104A) and an input node, and a second end of the capacitor (56, 66, 76, 96, 106) is electrically connected to the second leadframe segment (54B, 64B, 74B, 94B, 104B). [2] The device of claim 1, further comprising an integrated circuit comprising the capacitor (56, 66, 76, 96, 106) and the first transistor (52A, 62A, 72A, 92A, 102A), wherein: a drain terminal of the first transistor (52A, 62A, 72A, 92A, 102A) is electrically connected to the first leadframe segment (54A, 64A, 74A, 94A, 104A); a source terminal of the first transistor (52A, 62A, 72A, 92A, 102A) is electrically connected to the conductive element (58, 68, 78, 98, 108); a drain terminal of the second transistor (52B, 62B, 72B, 92B, 102B) is electrically connected to the conductive element (58, 68, 78, 98, 108); a source terminal of the second transistor (52B, 62B, 72B, 92B, 102B) is electrically connected to the second leadframe segment (54B, 64B, 74B, 94B, 104B); and the conductive element (58, 68, 78, 98, 108) comprises a clip or a wire. [3] Device according to claim 1 or 2, wherein: the capacitor (56, 66, 76, 96, 106) comprises at least one discrete capacitor; a first end of each capacitor of the at least one discrete capacitor is electrically connected to the first leadframe segment (54A, 64A, 74A, 94A, 104A); and a second end of each capacitor of the at least one discrete capacitor is electrically connected to the second leadframe segment (54B, 64B, 74B, 94B, 104B). [4] Device according to claim 3, wherein: the first leadframe segment (54A, 64A, 74A, 94A, 104A) is configured to be attached to a printed circuit board (PCB); the second leadframe segment (54B, 64B, 74B, 94B, 104B) is configured to be attached to the PCB; and the capacitor (56, 66, 76, 96, 106) is configured to be attached to the PCB. [5] The device of any preceding claim, wherein a distance from the first transistor (52A, 62A, 72A, 92A, 102A) through the first leadframe segment (54A, 64A, 74A, 94A, 104A), the capacitor, and the second leadframe segment (54B, 64B, 74B, 94B, 104B) to the second transistor (52B, 62B, 72B, 92B, 102B) is less than or equal to one millimeter. [6] The device of any preceding claim, further comprising an electrical loop comprising the first transistor (52A, 62A, 72A, 92A, 102A), the first leadframe segment (54A, 64A, 74A, 94A, 104A), the capacitor (56, 66, 76, 96, 106), the second leadframe segment (54B, 64B, 74B, 94B, 104B), the second transistor (52B, 62B, 72B, 92B, 102B), and the conductive element (58, 68, 78, 98, 108), wherein an inductance of the electrical loop is less than three hundred nanofarads. [7] Device according to one of the preceding claims, wherein: a thickness of the first lead frame segment (54A, 64A, 74A, 94A, 104A) is greater than one hundred micrometers and less than three hundred micrometers; a thickness of the second leadframe segment (54B, 64B, 74B, 94B, 104B) is greater than one hundred micrometers and less than three hundred micrometers; and a thickness of the capacitor (56, 66, 76, 96, 106) is greater than one hundred micrometers and less than two hundred micrometers. [8] Device according to one of the preceding claims, wherein: a distance from the first transistor (52A, 62A, 72A, 92A, 102A) to the first end of the capacitor (56, 66, 76, 96, 106) is less than four hundred micrometers; and a distance from the second transistor (52B, 62B, 72B, 92B, 102B) to the second end of the capacitor (56, 66, 76, 96, 106) is less than four hundred micrometers. [9] Method comprising: electrically connecting a first side of a first transistor (52A, 62A, 72A, 92A, 102A) to a first leadframe segment (54A, 64A, 74A, 94A, 104A); electrically connecting a first side of a second transistor (52B, 62B, 72B, 92B, 102B) to a second leadframe segment (54B, 64B, 74B, 94B, 104B); electrically connecting a conductive element (58, 68, 78, 98, 108) to a second side of the first transistor (52A, 62A, 72A, 92A, 102A) and a second side of the second transistor (52B, 62B, 72B, 92B, 102B), wherein the first transistor (52A, 62A, 72A, 92A, 102A) is arranged between the conductive element (58, 68, 78, 98, 108) and the first leadframe segment (54A, 64A, 74A, 94A, 104A) and the second transistor (52B, 62B, 72B, 92B, 102B) is arranged between the conductive element (58, 68, 78, 98, 108) and the second leadframe segment (54B, 64B, 74B, 94B, 104B); Arranging a capacitor (56, 66, 76, 96, 106) between the first transistor (52A, 62A, 72A, 92A, 102A) and the second transistor (52B, 62B, 72B, 92B, 102B), wherein the capacitor (56, 66, 76, 96, 106) is arranged on the first lead frame segment (54A, 64A, 74A, 94A, 104A) and the second lead frame segment (54B, 64B, 74B, 94B, 104B), wherein a Space for the capacitor (56, 66, 76, 96, 106) is removed; electrically connecting a first end of a capacitor (56, 66, 76, 96, 106) to the first leadframe segment (54A, 64A, 74A, 94A, 104A); and electrically connecting a second end of the capacitor (56, 66, 76, 96, 106) to the second leadframe segment (54B, 64B, 74B, 94B, 104B). [10] The method of claim 9, wherein: electrically connecting the first end of the capacitor (56, 66, 76, 96, 106) to the first leadframe segment (54A, 64A, 74A, 94A, 104A) comprises etching a portion of the first leadframe segment (54A, 64A, 74A, 94A, 104A) adjacent to the first transistor (52A, 62A, 72A, 92A, 102A); and electrically connecting the second end of the capacitor (56, 66, 76, 96, 106) to the second leadframe segment (54B, 64B, 74B, 94B, 104B) comprises etching a portion of the second leadframe segment (54B, 64B, 74B, 94B, 104B) adjacent to the second transistor (52B, 62B, 72B, 92B, 102B). [11] The method of claim 9, wherein: electrically connecting the first end of the capacitor (56, 66, 76, 96, 106) to the first leadframe segment (54A, 64A, 74A, 94A, 104A) comprises etching a portion of the first leadframe segment (54A, 64A, 74A, 94A, 104A) opposite the first transistor (52A, 62A, 72A, 92A, 102A); and electrically connecting the second end of the capacitor (56, 66, 76, 96, 106) to the second leadframe segment (54B, 64B, 74B, 94B, 104B) comprises etching a portion of the second leadframe segment (54B, 64B, 74B, 94B, 104B) opposite the second transistor (52B, 62B, 72B, 92B, 102B). [12] The method of claim 11, further comprising: Forming a first conductive path through the first leadframe segment (54A, 64A, 74A, 94A, 104A); and Forming a second conductive path through the second leadframe segment (54B, 64B, 74B, 94B, 104B), wherein: electrically connecting the first end of the capacitor to the first leadframe segment (54A, 64A, 74A, 94A, 104A) further comprises electrically connecting the first end of the capacitor to the first conductive path, and electrically connecting the second end of the capacitor to the second leadframe segment (54B, 64B, 74B, 94B, 104B) further comprises electrically connecting the second end of the capacitor to the second conductive path. [13] The method of claim 12, wherein: the first conductive path comprises solder; and the second conductive path includes solder. [14] A method according to any one of claims 11 to 13, further comprising: Encapsulating the first transistor (52A, 62A, 72A, 92A, 102A), the second transistor (52B, 62B, 72B, 92B, 102B), the first leadframe segment (54A, 64A, 74A, 94A, 104A), the second leadframe segment (54B, 64B, 74B, 94B, 104B), and the conductive element (58, 68, 78, 98, 108) in a molding compound; and partially encapsulating the capacitor (56, 66, 76, 96, 106) in the molding compound. [15] The method of claim 14, further comprising: Attaching the first leadframe segment (54A, 64A, 74A, 94A, 104A) to a printed circuit board (PCB); and Attaching the second lead frame segment (54B, 64B, 74B, 94B, 104B) to the PCB; and Attach the capacitor (56, 66, 76, 96, 106) to the PCB. [16] A method according to any one of claims 9 to 15, wherein: electrically connecting the first transistor (52A, 62A, 72A, 92A, 102A) to the first lead frame segment (54A, 64A, 74A, 94A, 104A) comprises soldering the first transistor (52A, 62A, 72A, 92A, 102A) to the first lead frame segment (54A, 64A, 74A, 94A, 104A); electrically connecting the second transistor to the second leadframe segment (54B, 64B, 74B, 94B, 104B) comprises soldering the second transistor (52B, 62B, 72B, 92B, 102B) to the second leadframe segment (54B, 64B, 74B, 94B, 104B); electrically connecting the conductive element (58, 68, 78, 98, 108) to the first transistor (52A, 62A, 72A, 92A, 102A) and the second transistor (52B, 62B, 72B, 92B, 102B) comprises soldering the conductive element to the first transistor (52A, 62A, 72A, 92A, 102A) and the second transistor (52B, 62B, 72B, 92B, 102B); electrically connecting the first end of the capacitor to the first leadframe segment (54A, 64A, 74A, 94A, 104A) comprises soldering the first end of the capacitor (56, 66, 76, 96, 106) to the first leadframe segment (54A, 64A, 74A, 94A, 104A); and electrically connecting a second end of the capacitor to the second leadframe segment (54B, 64B, 74B, 94B, 104B) comprises soldering the second end of the capacitor (56, 66, 76, 96, 106) to the second leadframe segment (54B, 64B, 74B, 94B, 104B). [17] A method according to any one of claims 9 to 16, wherein: a first distance between the first transistor (52A, 62A, 72A, 92A, 102A) and the first end of the capacitor (56, 66, 76, 96, 106) is less than four hundred micrometers; and a second distance between the second transistor (52B, 62B, 72B, 92B, 102B) and the second end of the capacitor (56, 66, 76, 96, 106) is less than four hundred micrometers. [18] The method of any one of claims 9 to 17, wherein a distance from the first transistor (52A, 62A, 72A, 92A, 102A) through the first leadframe segment (54A, 64A, 74A, 94A, 104A), the capacitor (56, 66, 76, 96, 106) and the second leadframe segment (54B, 64B, 74B, 94B, 104B) to the second transistor (52B, 62B, 72B, 92B, 102B) is less than or equal to one millimeter. [19] Power converter device comprising: an input voltage lead frame segment (54A, 64A, 74A, 94A, 104A); a reference voltage lead frame segment (54B, 64B, 74B, 94B, 104B); a high-side transistor (52A, 62A, 72A, 92A, 102A), wherein a high-side drain terminal on a first side of the high-side transistor (52A, 62A, 72A, 92A, 102A) is electrically connected to the input voltage leadframe segment (54A, 64A, 74A, 94A, 104A); a low-side transistor (52B, 62B, 72B, 92B, 102B), wherein a low-side source terminal on a first side of the low-side transistor (52B, 62B, 72B, 92B, 102B) is electrically connected to the reference voltage leadframe segment (54B, 64B, 74B, 94B, 104B); a conductive element (58, 68, 78, 98, 108), wherein the conductive element is electrically connected to a high-side source terminal on a second side of the high-side transistor (52A, 62A, 72A, 92A, 102A) and a low-side drain terminal on a second side of the low-side transistor (52B, 62B, 72B, 92B, 102B), wherein the high-side transistor (52A, 62A, 72A, 92A, 102A) is arranged between the conductive element (58, 68, 78, 98, 108) and the input voltage leadframe segment (54A, 64A, 74A, 94A, 104A), and the low-side transistor (52B, 62B, 72B, 92B, 102B) is arranged between the conductive element (58, 68, 78, 98, 108) and the reference voltage leadframe segment (54B, 64B, 74B, 94B, 104B); and a capacitor (56, 66, 76, 96, 106), wherein: the capacitor (56, 66, 76, 96, 106) is arranged on the input voltage leadframe segment (54A, 64A, 74A, 94A, 104A) and the reference voltage leadframe segment (54B, 64B, 74B, 94B, 104B), wherein a space for the capacitor (56, 66, 76, 96, 106) is removed from the input voltage leadframe segment (54A, 64A, 74A, 94A, 104A) and the reference voltage leadframe segment (54B, 64B, 74B, 94B, 104B), the capacitor (56, 66, 76, 96, 106) is arranged between the high-side transistor (52A, 62A, 72A, 92A, 102A) and the low-side transistor (52B, 62B, 72B, 92B, 102B), a high-side of the capacitor (56, 66, 76, 96, 106) is electrically connected to the input voltage leadframe segment (54A, 64A, 74A, 94A, 104A), a low-side of the capacitor (56, 66, 76, 96, 106) is electrically connected to the reference voltage leadframe segment (54B, 64B, 74B, 94B, 104B), a first distance between the high-side drain terminal and the high-side of the capacitor (56, 66, 76, 96, 106) is less than four hundred micrometers, and a second distance between the low-side source terminal and the low-side of the capacitor (56, 66, 76, 96, 106) is less than four hundred micrometers. [20] The power converter device of claim 19, further comprising an integrated circuit including the capacitor (56, 66, 76, 96, 106) and the low-side transistor (52B, 62B, 72B, 92B, 102B), wherein a third distance between the high-side transistor (52A, 62A, 72A, 92A, 102A) and the integrated circuit is less than two hundred micrometers.

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