Optoelectronic device and method

Abstract

Optoelectronic device (1), comprising: a glass support (6), at least one light-scattering layer (8) applied to the glass substrate, at least one surface-emitting device (2) in chip-size package with an emission surface (3) and having a first (5a) and a second (5b) contact pad on a surface (4) facing away from the emission surface, wherein the emission surface (3) is arranged on the light-scattering layer (8) by means of an adhesive (7); at least one contact line (9) which contacts the second contact pad (5b) of the at least one surface-emitting device (2) and extends along a side surface (10) of the optoelectronic device (2) adjacent to the second contact pad (5b) in the direction of the glass substrate (6); and a light-shaping structure (11) which is arranged on the surface of the glass substrate (6) facing away from the optoelectronic component (2).

Description

[0001] The present invention relates to an optoelectronic device with at least one surface-emitting component arranged on a glass substrate, and to a method for manufacturing the same.

[0002] For display illumination, highly efficient LED light sources with small dimensions and low coupling losses are required in narrow optical fibers. The thickness of such an optical fiber can be, for example, less than 0.8 mm.

[0003] Such light sources are known from EP 2 657 994 B1 and US 2018 / 0 119 931 A1.

[0004] Furthermore, light sources are also needed that directly illuminate LCD displays and should be highly efficient and highly homogeneous across the entire display area despite being only a few millimeters thick.

[0005] For the use of such light sources in the automotive sector, they must be coupled to a display or a light guide with very high mechanical stability.

[0006] In current applications, micro-LEDs are typically used to illuminate LCD displays. However, for future applications that also aim to enable three-dimensional displays and where efficiency optimizations using polarizing films, for example, are no longer possible, the brightness of these LEDs is insufficient. Furthermore, it is currently not possible to couple such LEDs with a light guide that meets the mechanical requirements of the automotive sector, as these requirements are significantly higher than those for consumer products.

[0007] The present invention is based, therefore, on the objective of providing an improved optoelectronic device which offers very high mechanical stability and high efficiency for very thin optical fibers, particularly for use in the automotive sector.

[0008] The problem is solved by an optoelectronic device having the features of claim 1 and by a method of claim 16. Embodiments and further developments of the invention are described in the dependent claims.

[0009] An optoelectronic device according to the invention comprises a glass substrate, at least one light-diffusing layer arranged on the glass substrate, and at least one surface-emitting device in a chip-size package, which has an emission surface and a surface facing away from the emission surface with two contact pads. The emission surface of the at least one surface-emitting device is arranged on the light-diffusing layer by means of an adhesive. Furthermore, the optoelectronic device comprises at least one contact line which contacts the second contact pad of the at least one surface-emitting device and extends along a side surface of the optoelectronic device adjacent to the second contact pad in the direction of the glass substrate, as well as a light-shaping structure which is arranged on the surface of the glass substrate facing away from the optoelectronic device.

[0010] The at least one light-scattering layer can exhibit conversion properties in addition to its light-scattering properties. For this purpose, the light-scattering layer can be formed, for example, from a polysiloxane matrix or a similar material containing converter particles, particularly color converter particles.

[0011] The light-shaping structure can be formed by a polarizing filter or other beam-shaping grating (DBR) with a periodic pattern and a width of, for example, 100 nm to 300 nm. The width of the pattern should be related to a wavelength of the light emitted by the surface-emitting component.

[0012] The surface-emitting component is, for example, an LED (light-emitting diode) that is packaged as a chip-size package and has a first and a second contact pad on the surface opposite the emission area. In one aspect, the LED is designed to emit light with a wavelength in the blue range. However, it is also possible for the LED to emit light with a wavelength in the red, green, or another range. Depending on the application, the blue light emitted by an LED can be converted into light of a different wavelength, such as red or green, by an additional converter material applied to the LED.

[0013] At least one contact line of an optoelectronic device contacts the second contact pad and then extends along a side surface of the surface-emitting component adjacent to the second contact pad towards the glass substrate. Conversely, the optoelectronic device may have a further contact line that contacts the first contact pad and extends along a side surface of the surface-emitting component adjacent to the first contact pad towards the glass substrate. The contact lines may also extend outwards from the surface-emitting component along the light-scattering layer and / or the glass substrate to allow for external electrical contact of the optoelectronic device.

[0014] The contact lines are applied to the contact pads of the surface-emitting device and at least one of the glass substrate and the light-diffusing layer using a so-called PICOS (Planar Interconnect-On-Substrate) process. In the first step, a seed layer, in particular a titanium-copper alloy, is applied to the side of the surface-emitting device facing away from the emission surface and to at least one of the glass substrate and the light-diffusing layer. A photoresist is then applied to the seed layer and structured so that areas of the seed layer are exposed. These exposed areas of the seed layer are then electroplated, and copper-titanium is electroplated onto them. The remaining photoresist and the underlying seed layer are then removed.This procedure "encloses" the surface-emitting component with the contact lines, making it possible to ensure the required mechanical stability of the optoelectronic device using these PICOS contacts.

[0015] In addition to the PICOS contact lines for increasing mechanical stability, the optoelectronic device can have a white, particularly reflective, filler layer that encases the at least one surface-emitting component and the at least one contact line on the side of the surface-emitting component facing away from the emission surface. This not only ensures additional mechanical stability of the optoelectronic device, but also ensures that the light emitted by the surface-emitting component exits the optoelectronic device almost exclusively in the direction of the emission surface and not in the direction of the side surfaces and the surface of the surface-emitting component opposite the emission surface.

[0016] Light-scattering material or particles can be incorporated into the glass layer of the optoelectronic device. This allows for beam homogenization of the radiation emitted by the surface-emitting component towards the emission surface, in addition to the light-scattering properties of the light-scattering layer itself.

[0017] This has the advantage, among others, that the light emitted by the at least one surface-emitting component is homogenized by at least the light-scattering layer and, if applicable, the glass layer, thus illuminating the light-shaping structure well.

[0018] On the side of the light-shaping structure facing away from the glass substrate, an additional light guide can be arranged, which directs the light emitted by the at least one surface-emitting component along the longitudinal direction of propagation of the surface-emitting component. The more homogeneously the emitted light falls on the light-shaping structure, the more homogeneously the light guide can then be illuminated.

[0019] By applying such a light guide, a flat light source can be created in a special way for so-called backlighting of, for example, displays, daytime running lights or car taillights.

[0020] For such applications, a light guide should not exceed a thickness of 0.8 mm, which is why the surface-emitting components should not exceed a width of 0.3 mm in any aspect. Furthermore, it is advantageous for the surface-emitting component to have a height of ≤ 0.5 mm and a length of ≤ 1 mm. This is partly to ensure that the entire optoelectronic device is as flat as possible and to guarantee easy assembly.

[0021] In this context, the glass substrate is also designed to be thin in one aspect, specifically only a few tenths of a millimeter thick. This ensures that the optoelectronic device can be designed to be as flat as possible.

[0022] The adhesive between the at least one surface-emitting component and the light-diffusing layer can have various designs or shapes. In some embodiments, the adhesive may be limited to the cross-sectional area of ​​the surface-emitting component, while in others, the adhesive extends beyond this area. This can result, for example, from the adhesive being forced outwards when the surface-emitting component is pressed onto the light-diffusing layer, thus creating an accumulation of adhesive at the outer edges of the surface-emitting component.This can lead to the formation of an adhesive "accumulation" at the edges of the surface-emitting component, for example, in the form of a ramp extending from the side surfaces of the surface-emitting component towards the light-scattering layer. The ramp can be either steep or less steep and can extend to the side surface of the optoelectronic device or flatten out towards it. The shape of the adhesive "accumulation" can also be rounded, droplet-shaped, or form a raised bar parallel to the light-scattering layer.

[0023] The extent of the adhesive "accumulation" can be related, for example, to the amount of adhesive applied and / or the pressure when pressing the surface-emitting component onto the light-scattering layer and / or the viscosity of the adhesive and / or the surface finish of the surface-emitting component and / or the surface finish of the light-scattering layer and / or other process parameters such as room temperature.

[0024] Furthermore, the optoelectronic device can have a heat dissipation layer located on the side of the surface-emitting component facing away from the emission surface. The heat dissipation layer can be metallized to dissipate the heat generated by the surface-emitting component as efficiently as possible. However, a portion of the filler material layer is positioned between the contact lines and the heat dissipation layer, thus electrically separating and insulating the contact lines and the heat dissipation layer from each other.

[0025] At least two, but also 2 to 100 and in particular 2 to 2000, of the optoelectronic devices described above can form an arrangement. The at least two optoelectronic devices are arranged longitudinally adjacent to each other, and the at least one contact line of each optoelectronic device runs from the second contact pad of a first surface-emitting device along the glass substrate between the at least two adjacent surface-emitting devices to the first contact pad of a second surface-emitting device, so that they are electrically connected in series.

[0026] In such an arrangement, the glass substrate, the light-scattering layer, the light-shaping structure and the filler material layer can be formed together and run continuously between the transitions of the at least two optoelectronic devices.

[0027] The adhesive between two adjacent surface-emitting components of such an arrangement can at least partially fill this gap. The shape of the adhesive "accumulation" can be, for example, a raised bar parallel to the light-scattering layer, a U-shape (i.e., with a depression in the adhesive between the adjacent surface-emitting components), or two ramps extending from each of the adjacent surface-emitting components. The at least one contact line of the at least two optoelectronic devices can run between the two surface-emitting components on the surface of the adhesive.

[0028] The present application further comprises a method for manufacturing an optoelectronic device or arrangement described above. The method includes providing a glass substrate with at least one light-scattering layer. The method further comprises providing at least two surface-emitting devices in a chip-size package, each with an emission surface and a surface facing away from the emission surface, each having a first and a second contact pad. The emission surfaces of the at least two surface-emitting devices are bonded to the light-scattering layer. The PICOS method described above is then applied.

[0029] The process can further include applying a light-shaping structure to the surface of the glass substrate facing away from the optoelectronic components, as well as singulating the surface-emitting components in the form of strips. The strips can comprise either a series of surface-emitting components or individual surface-emitting components.

[0030] Furthermore, the method can include applying a light guide to the side of the light-shaping structure facing away from the glass substrate, wherein the light guide directs the light emitted by the at least one isolated surface-emitting component along the longitudinal propagation direction of the surface-emitting component.

[0031] Exemplary embodiments of the invention are explained in more detail below with reference to the accompanying drawings. These show, schematically, Fig. 1 an embodiment of the optoelectronic device according to the invention; Fig. 2 another embodiment of the optoelectronic device in which a light-scattering layer is assigned to the optoelectronic component in certain areas; Fig. 3 another embodiment of the optoelectronic device in which the glass carrier additionally has particles; Fig. 4A and Fig. 4B Further embodiments of the optoelectronic device with different versions of the adhesive; Fig. 5 another embodiment of the optoelectronic device with an additionally applied light guide; Fig. 6 another embodiment of the optoelectronic device with an additionally applied heat dissipation layer; Fig. 7 an arrangement of at least two optoelectronic devices; Fig. 8 a further arrangement of at least two optoelectronic devices with a further embodiment of the adhesive; Fig. 9 a further arrangement of at least two optoelectronic devices with an additionally applied light guide.

[0032] Fig. Figure 1 shows an optoelectronic device (1) comprising a glass substrate (6), a light-diffusing layer (8), and a surface-emitting component (2) with an emission surface (3) and a surface (4) facing away from the emission surface. This light-diffusing layer (8) is applied to the glass substrate (6), and the emission surface (3) of the surface-emitting component (2) is mounted on this layer by means of a transparent adhesive (7). The adhesive (7) is positioned between the surface-emitting component (2) and the light-diffusing layer (8) such that it does not extend beyond the cross-sectional area of ​​the surface-emitting component (2) to a large extent. However, as shown in more detail in the following embodiments, it is also possible for the adhesive (7) to extend beyond the cross-sectional area of ​​the surface-emitting component (2).This can result, among other things, from the fact that the adhesive (7) is forced outwards when the surface-emitting component (2) is pressed onto the light-scattering layer (8), resulting in an “accumulation” of adhesive on the outer edges of the surface-emitting component (2).

[0033] The surface-emitting component (2) in Fig. For example, component 1 is of the chip-size package type and has a first (5a) and a second (5b) contact pad on surface (4). The structure of the surface-emitting device (2) corresponds in a particular way to that of a conventional LED (light-emitting diode) formed as a chip-size package. The LED has an upper p-doped first layer, a lower n-doped second layer, and an active zone between the two layers. The first layer is contacted, for example, via the first contact pad (5a), and the second layer is contacted via the second contact pad (5b) and the connected vias, which are insulated from the first contact pad (5a). The LED is designed in one aspect to emit light with a wavelength in the blue range. However, it is also possible for the LED to emit light with a wavelength in the red, green, or another range.Depending on the application, the blue light emitted by an LED can be converted into light of a different wavelength, e.g. red or green, by means of an additional converter material applied to the LED.

[0034] Furthermore, the optoelectronic device (1) comprises a contact line (9) which contacts the second contact pad (5b) and extends along a side surface (10) of the surface-emitting component (2) adjacent to the second contact pad (5b) in the direction of the glass substrate (6). The side surface (10) is defined here as the surface in the plane of the drawing. Fig. The contact line (9) is considered to be the outer surface of the surface-emitting component (2) that is perpendicular to, or almost perpendicular to, the surface (4). In a mirrored manner, the optoelectronic device (1) can have a further contact line that contacts the first contact pad (5a) and runs along a side surface of the surface-emitting component (2) adjacent to the first contact pad (5a) in the direction of the glass substrate (6). The contact line (9) can be configured as shown in Fig. Figure 1 shows that the second contact pad (5b) can be partially contacted, or the entire contact pad (5b) can be covered. Furthermore, it is also possible that the contact line (9) has changes in its cross-sectional area in the region of the contact pad (5b) and thus in the area of ​​the contact surface. The contact lines can also extend outwards from the surface-emitting component along the light-scattering layer (8) to electrically contact the optoelectronic device (1) from the outside.

[0035] The contact lines are applied to the contact pads of the surface-emitting device (2) using a special process called PICOS (Planar Interconnect-On-Substrate). First, a seed layer, in particular a titanium-copper alloy, is applied to the side of the surface-emitting device (2) facing away from the emission surface (3) and to at least one layer consisting of the glass substrate (6) and the light-diffusing layer (8). Then, a photoresist is applied to the seed layer and structured so that areas of the seed layer are exposed. These exposed areas of the seed layer are then electroplated, allowing the copper of the titanium-copper alloy to grow in these areas. The areas of photoresist remaining after structuring and the underlying seed layer are then removed.This procedure "encloses" the surface-emitting component (2) with the contact lines, so that it is possible to ensure the required mechanical stability of the optoelectronic device (1) using these PICOS contacts.

[0036] The light-scattering layer (8) applied to the glass substrate (6) is a particularly smooth and hard phosphor coating, formed, for example, from a so-called PIX (polysiloxane matrix) or a similar material with incorporated particles. These incorporated particles can be, for example, converter particles or color converter particles, so that the light-scattering layer (8) also exhibits conversion properties.

[0037] On the surface of the glass substrate (6) opposite the light-scattering layer (8), a light-shaping structure (11) is additionally arranged. This light-shaping structure (11) can be formed, for example, by polarizing filters or other beam-shaping gratings (DBRs) with a periodic structure with a width of, in particular, 100 nm to 300 nm. The light-shaping structure (11) allows the light emitted by the surface-emitting components to be shaped, for example, and reflected into an additional light guide.

[0038] To ensure that the light emitted by the surface-emitting component (2) exits the optoelectronic device (1) almost exclusively in the direction of the emission surface (3), it can be advantageous to embed the surface-emitting component (2) and the contact lines in a filler material layer (12), for example, white, and in particular reflective. This ensures that virtually no light escapes from the optoelectronic device (1) in the direction of the side surfaces and the surface (4) of the surface-emitting component (2) opposite the emission surface (3). A further advantage of the filler material layer (12) can be increased mechanical stability of the optoelectronic device (1).

[0039] Fig. Figure 2 shows a further embodiment of an optoelectronic device (1). In contrast to the one in Fig. In the optoelectronic device (1) shown, the light-scattering layer (8) does not form a continuous layer on the glass substrate (6), but is only formed in the area of ​​the cross-sectional area of ​​the surface-emitting component (2). Accordingly, a light-scattering layer (8) is assigned to the optoelectronic component (2) in certain areas. In contrast to Fig. 1 therefore not to the light-scattering layer (8), but runs along the side surface (10) of the surface-emitting component (2) to the glass support (6) and along the glass support (6) in its longitudinal propagation direction.

[0040] The optoelectronic device (1) in Fig. 3 shows in contrast to the optoelectronic device (1) in Fig. 1 and Fig. 2, that additional light-scattering material or light-scattering particles (13) can be introduced into the glass substrate (6). This allows, in addition to the light-scattering properties of the light-scattering layer (8), a beam homogenization of the radiation emitted by the surface-emitting component (2) in the direction of the emission surface (3) to be achieved in the glass substrate (6).

[0041] The Fig. 4A and Fig. Figure 4B shows two further exemplary embodiments of an optoelectronic device (1) with different versions of the adhesive (7). In both figures, the adhesive (7) extends beyond the cross-sectional area of ​​the surface-emitting component (2). This can result, among other things, from the fact that the adhesive (7) is forced outwards when the surface-emitting component (2) is pressed onto the light-scattering layer (8), thereby forming an accumulation of adhesive at the outer edges of the surface-emitting component (2). In the illustrated case, this results in an accumulation of the adhesive (7) at the edges of the surface-emitting component (2) in the form of a ramp extending from the side surfaces of the surface-emitting component (2) towards the light-scattering layer (8). The Fig. The ramp shown in 4A is steeper than the one in Fig. The ramp shown in 4B is formed and does not extend to the side surface of the optoelectronic device (1), whereas the ramp shown in Fig. 4B shows the ramp extending to the side surface of the optoelectronic device (1).

[0042] However, the shape of the adhesive “accumulation” is not necessarily in the form of a ramp, but can also be rounded, droplet-shaped or in the form of a raised bar parallel to the light-scattering layer (8).

[0043] The extent of the adhesive “accumulation” may be related, for example, to the amount of adhesive applied (7) and / or the pressure when pressing the surface-emitting component (2) onto the light-scattering layer (8) and / or the viscosity of the adhesive (7) and / or the surface finish of the surface-emitting component (2) and / or the surface finish of the light-scattering layer (8) and / or other process parameters such as room temperature.

[0044] The contact line (9) runs in the Fig. 4A and Fig. 4B in contrast to the previous embodiments, from the surface (4) of the surface-emitting component (2) opposite the emission surface (3), along the side surface (10) of the surface-emitting component (2), on the adhesive “cumulation” in the direction of the glass support (6) and towards the outer surface of the optoelectronic device in the longitudinal propagation direction of the glass support (6).

[0045] The optoelectronic device (1) in Fig. 5 shows in contrast to the optoelectronic device (1) in Fig. Figure 1 shows a further embodiment of an optoelectronic device (1) which additionally has a light guide (14). This is arranged on the surface of the light-shaping structure (11) facing away from the glass substrate. The light guide (14) is designed such that it guides the light emitted by the surface-emitting component (2) in a special manner along the longitudinal propagation direction of the surface-emitting component (2).

[0046] By applying such a light guide, a flat light source can be created in a special way for so-called backlighting of, for example, displays, daytime running lights or car taillights.

[0047] For such applications, a light guide should not exceed a thickness of 2 mm, or particularly 1 mm, or most especially 0.8 mm, which is why the surface-emitting components (2) should not exceed a corresponding width of 0.9 mm, or particularly 0.6 mm, or most especially 0.3 mm. Furthermore, it is advantageous for the surface-emitting component (2) to have a height of ≤0.5 mm and a length of ≤1 mm. This is due, among other things, to the need to design the entire optoelectronic device (1) to be as flat as possible and to ensure easy assembly of the device.

[0048] The glass support (6) is also designed to be thin, in particular only a few tenths of a millimeter thick. This ensures that the optoelectronic device (1) can be designed to be as flat as possible.

[0049] According to the in Fig. In the embodiment of an optoelectronic device (1) shown in section 6, this device can be used in addition to the one described in Fig. The optoelectronic device (1) shown in Figure 1 has a heat dissipation layer (15) above the surface (4) of the surface-emitting component (2) opposite the emission surface (3). The heat dissipation layer (15) can be metallized or made of a metal to dissipate the heat losses generated by the surface-emitting component (2). As shown in the figure, a portion of the filler material layer (15) is arranged between the contact lines and the heat dissipation layer (15), thus electrically separating and insulating them.

[0050] Fig. Figure 7 shows an arrangement (0) with at least two optoelectronic devices (1a to 1n) according to the one described in the Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5 to Fig. Figure 6 shows the optoelectronic devices (1). The at least two optoelectronic devices (1a to 1n) are arranged longitudinally adjacent to each other. The contact line (9) of each optoelectronic device (1a to 1n) runs from the second contact pad (5b) of its surface-emitting component (2a) on the light-scattering layer (8) along the glass substrate (6) between each pair of adjacent surface-emitting components (2a and 2b) to the first contact pad (5a) of the adjacent surface-emitting component (2b), thereby electrically connecting the at least two optoelectronic devices (1a and 1b) in series.

[0051] Here, n is to be understood as a natural number from 2 to infinity, in particular from 2 to 100 and especially from 2 to 2000. Accordingly, the number n results in an arrangement of n optoelectronic devices (1a to 1n) connected in series, each electrically connected to the other via a contact line (9).

[0052] The glass support (6), the light-scattering layer (8), the light-shaping structure (11) and the filler layer (12) are all formed in a special way as a single piece and accordingly uninterrupted between the transitions of the at least two optoelectronic devices (1a to 1n).

[0053] The arrangement (0) can be positioned not only in the longitudinal direction of the drawing plane of the Fig. 7, but also perpendicular to the drawing plane of the Fig. 7. Extend the wafer so that, for example, a multitude of series of optoelectronic devices (1a to 1n) connected in series are obtained. This wafer can then be singulated into multiples of the optoelectronic devices (1a to 1n) in any desired size, for example, to use the optoelectronic devices (1a to 1n) as a surface light source. It is also possible to singulate the series-connected optoelectronic devices (1a to 1n) into narrow strips of only one series of series-connected optoelectronic devices (1a to 1n) each, and to use such a strip, as in Fig. 9, shown on an additional waveguide (14).

[0054] The optical fiber (14) is designed in such a way that in one aspect it guides the light emitted by the surface-emitting components (2a to 2n) along the longitudinal propagation direction of the optoelectronic devices (1a to 1n) connected in series.

[0055] By applying such a light guide, a flat light source can be created in a special way for so-called backlighting of, for example, displays, or also for daytime running lights or car taillights.

[0056] As already described in the exemplary embodiments of the optoelectronic device (1) in Fig. 4A and Fig. As explained in Figure 4B, the adhesive (7) can extend beyond the cross-sectional area of ​​the surface-emitting components (2a to 2n) and, in the present embodiment, Fig. 8. The space between two adjacent surface-emitting components (2a to 2n) is at least partially filled. This can result, among other things, from the fact that the adhesive (7) is forced outwards when the surface-emitting components (2a to 2n) are pressed onto the light-scattering layer (8), thus forming an "accumulation" of adhesive at the outer edges of the surface-emitting components (2a to 2n).

[0057] However, the extent of the adhesive "accumulation" is not necessarily as described in Fig. 8 shown, in the form of a beam parallel to and raised to the light-scattering layer (8), but can also be in the form of a U, i.e. with a depression in the adhesive (7) between the adjacent surface-emitting components (2a to 2n), or for example in the form of two ramps extending from the adjacent surface-emitting components (2a to 2n).

[0058] The extent of the adhesive “accumulation” can be related, for example, to the amount of adhesive applied (7) and / or the pressure when pressing the surface-emitting components (2a to 2n) onto the light-scattering layer (8) and / or the viscosity of the adhesive (7) and / or the surface finish of the surface-emitting components (2a to 2n) and / or the surface finish of the light-scattering layer (8) and / or other process parameters such as room temperature.

[0059] The contact line (9) runs as in the Fig. 4A and Fig.4B from the surface (4) of the surface-emitting components (2a to 2n) opposite the emission surface (3), along the side surface (10) of the surface-emitting components (2a to 2n), on the adhesive "cumulation" towards the glass substrate (6) and towards the adjacent optoelectronic device (1a to 1n) in the longitudinal direction of the glass substrate (6). In a mirrored manner, the contact line (9) runs in the adjacent optoelectronic device (1a to 1n) on the adhesive "cumulation", along the side surface of the surface-emitting components (2a to 2n) opposite the side surface (10) up to the surface (4) of the surface-emitting components (2a to 2n) opposite the emission surface (3) to the first contact pad (5a). REFERENCE MARK LIST 0 Arrangement 1, 1a, 1b, 1..., 1n Optoelectronic device 2, 2a, 2b, 2..., 2n surface-emitting device 3 Emission area 4. Surface facing away from the emission surface 5a, 5b Contact pad 6 glass carriers 7 glue 8 light-diffusing layer 9 Contact line 10 side surface 11 light-shaping structure 12 Filler layer 13 light-scattering particles 14 fiber optic cables 15 Heat dissipation layer

Claims

Optoelectronic device (1) comprising: a glass substrate (6), at least one light-scattering layer (8) applied to the glass substrate, at least one surface-emitting device (2) in a chip-size package having an emission surface (3) and a surface (4) facing away from the emission surface, comprising a first (5a) and a second (5b) contact pad, wherein the emission surface (3) is arranged on the light-scattering layer (8) by means of an adhesive (7); at least one contact line (9) which contacts the second contact pad (5b) of the at least one surface-emitting device (2) and extends along a side surface (10) of the optoelectronic device (2) adjacent to the second contact pad (5b) in the direction of the glass substrate (6); and a light-shaping structure (11) which is arranged on the surface of the glass substrate (6) facing away from the optoelectronic device (2). Optoelectronic device (1) according to claim 1, characterized in that the at least one light-scattering layer (8) has conversion properties. Optoelectronic device (1) according to one of the preceding claims, characterized in that the at least one light-scattering layer (8) is formed from a polysiloxane matrix with color converter particles. Optoelectronic device (1) according to one of the preceding claims, characterized in that the light-shaping structure (11) comprises a beam-shaping grating, in particular a DBR or a polarization filter. Optoelectronic device (1) according to one of the preceding claims, characterized in that the at least one contact line (9) is formed by a PICOS contact. Optoelectronic device (1) according to one of the preceding claims, characterized in that a filler material layer (12) encloses the at least one surface-emitting component (2) and the at least one contact line (9) on the side (4) of the surface-emitting component facing away from the emission surface (3). Optoelectronic device (1) according to one of the preceding claims, characterized in that the surface-emitting component (2) is designed to emit light in the blue wavelength range. Optoelectronic device (1) according to one of the preceding claims, characterized in that the glass layer (6) has light-scattering particles (13). Optoelectronic device (1) according to one of the preceding claims, characterized in that the at least one surface-emitting component (2) has a height of ≤0.5mm, a length of ≤1mm and a width of ≤0.3mm. Optoelectronic device (1) according to one of the preceding claims, characterized in that the light-shaping structure (11) has a periodic structuring with a width of 100 nm to 300 nm. Optoelectronic device (1) according to one of the preceding claims, characterized in that the adhesive (7) forms a ramp or elevation between the side surface (10) of the at least one surface-emitting component (2) and the glass support (6) or the light-scattering layer (8), on which the contact line (9) runs. Optoelectronic device (1) according to one of the preceding claims, characterized in that an additional heat dissipation layer (15) is arranged on the side (4) of the surface-emitting component (2) facing away from the emission surface (3). Optoelectronic device (1) according to one of the preceding claims, characterized in that a light guide (14) is arranged on the side of the light-shaping structure (11) facing away from the glass support (6), wherein the light guide (14) directs the light emitted by the at least one surface-emitting component (2) along the longitudinal propagation direction of the surface-emitting component (2). Arrangement (0) with at least two optoelectronic devices (1a, 1b) according to one of the preceding claims, wherein the at least two optoelectronic devices (1) are arranged longitudinally adjacent to each other and the at least one contact line (9) of the respective optoelectronic device (1a, 1b) is connected along the glass substrate between the at least two surface-emitting components (2a, 2b) and electrically connects the at least two optoelectronic devices (1a, 1b) in series. Arrangement (0) according to claim 14, characterized in that a space between the at least two surface-emitting components (2a, 2b) is partially filled by the adhesive (7), and the at least one contact line (9) runs on the top side of the adhesive (7). Method for manufacturing an optoelectronic device (1) comprising: providing a glass substrate (6) with at least one light-scattering layer (8) thereon; providing at least two surface-emitting devices (2) in chip-size packages, each with an emission surface (3) and a surface (4) facing away from the emission surface, each having a first (5a) and a second (5b) contact pad; bonding the emission surfaces (3) of the at least two surface-emitting devices (2) to the light-scattering layer (8); applying a seed layer, in particular a titanium-copper alloy, to the side facing away from the emission surface (3) of the at least two surface-emitting devices (2) and at least one of the glass substrate (6) and the light-scattering layer (8); applying a photoresist to the seed layer; structuring the applied photoresist so that areas of the seed layer are exposed;Electroplating of the exposed areas of the germ layer; removal of the areas of photoresist and the underlying germ layer remaining after structuring. Method for manufacturing an optoelectronic device (1) according to claim 16, further comprising applying a light-shaping structure (11) to the surface of the glass substrate (6) facing away from the optoelectronic components (2). Method for manufacturing an optoelectronic device (1) according to claim 17, further comprising singulating the surface-emitting components (2) in the form of strips comprising only a series of surface-emitting components (2), or in the form of individual surface-emitting components (2). Method for manufacturing an optoelectronic device (1) according to claim 17 or 18, further comprising applying a light guide (14) to the side of the light-shaping structure (11) facing away from the glass support (6), wherein the light guide (14) directs the light emitted by the at least two surface-emitting components (2) or by the isolated individual surface-emitting components (2) along the longitudinal propagation direction of the surface-emitting component (2).

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