INTEGRATED CIRCUIT STRUCTURE, DEVICE AND METHOD

The integration of conductive protrusions in the gate conductor of a transistor structure enhances electron transfer efficiency, addressing delays and photodiode saturation issues in image sensor technologies.

DE102020110791B4Active Publication Date: 2026-06-03TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Filing Date
2020-04-21
Publication Date
2026-06-03

AI Technical Summary

Technical Problem

Existing image sensor technologies face challenges in efficiently transferring electrons, leading to delays and photodiode saturation, particularly in deep photodiode applications.

Method used

The integration of multiple conductive protrusions into the gate conductor of a transistor structure increases the channel area, enhancing electron transfer efficiency between regions, thereby reducing delay times and minimizing photodiode saturation.

Benefits of technology

The improved electron transfer efficiency reduces delay times and prevents photodiode saturation, optimizing performance in pixel transfer gate applications.

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Abstract

IC structure (100, 300), exhibiting: comprising a substrate region (100B) with a first doping type and an upper surface (100S); a first and second region (100R1, 100R2) arranged along an X-direction in the substrate region (100B), each of the first and second regions (100R1, 100R2) having a second doping type opposite to the first doping type; and a gate conductor (100G) having conductive projections (P1, P2) extending into the substrate region (100B) in a direction perpendicular to a plane of the upper surface (100S), where: the conductive projections (P1, P2) are electrically connected to each other; at least one section of each of the conductive protrusions (P1, P2) is positioned between the first and second areas (100R1, 100R2); and a first conductive protrusion of the conductive protrusions (P1, P2) and a second conductive protrusion of the conductive protrusions (P1, P2) have different positions in the X direction.
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