RC-IGBT Method for manufacturing an RC-IGBT

Abstract

RC-IGBT (1), comprising: - an active region (1-2) with an IGBT region (1-21) and a diode region (1-22); - a semiconductor body (10) having a first side (110) and a second side (120); - a first load terminal (11) on the first side (110) and a second load terminal (12) on the second side (120); - multiple control trenches (14) and multiple source trenches (16), wherein the multiple trenches (14, 16) are arranged parallel to each other along a first lateral direction (X) and extending along a vertical direction (Z) into the semiconductor body (10), wherein the multiple source trenches (16) extend into both the IGBT region (1-21) and the diode region (1-22);- several IGBT measures (17) and several diode measures (18) in the semiconductor body (10), wherein the measures (17, 18) are laterally delimited along the first lateral direction (X) by two of the several trenches (14, 16), wherein: ◯ the IGBT measures (17) each comprise: ▪ a source region (101) of a first conductivity type electrically connected to the first load terminal (11), and ▪ a body region (102) of a second conductivity type electrically connected to the first load terminal (11) and isolating the source region (101) from another region (100) of the first conductivity type of the RC-IGBT (1); ◯ wherein the diode measures (18) each comprise: ▪ a first anode region (1061) of the second conductivity type electrically connected to the first load terminal (11). Conductivity type;- in the semiconductor body (10) and on the second side (120), both◯ a diode emitter region (104) of the first conductivity type, which forms part of the diode region (1-22) and has a lateral extent in the first lateral direction (X) that is at least 50% of the drift region thickness or at least 50% of the semiconductor body thickness (d); and◯ an IGBT emitter region (103) of the second conductivity type, which forms part of the IGBT region (1-21) and has a lateral extent in the first lateral direction (X) that is at least 70% of the drift region thickness or at least 70% of the semiconductor body thickness (d); and- in the diode region (1-22), a second anode region (1062) of the second conductivity type electrically connected to the first load terminal (11), wherein the second anode region (1062)◯ extends deeper along the vertical direction (Z) compared with the trenches (14, 16) in the diode region (1-22);and◯ overlaps with the diode emitter region (104) for at least 5% of the horizontal area of ​​the diode emitter region (104).

Description

TECHNICAL AREA This document relates to embodiments of an RC-IGBT and to embodiments of a method for manufacturing an RC-IGBT. BACKGROUND Many functions of modern devices in automotive, consumer, and industrial applications, such as converting electrical energy and driving an electric motor or electric machine, rely on power semiconductor switches. Insulated-gate bipolar transistors (IGBTs), metal-oxide-semiconductor field-effect transistors (MOSFETs), and diodes, to name a few, are used in various applications, including, but not limited to, switches in power supplies and power converters. A power semiconductor device typically has a semiconductor body designed to conduct a forward load current along a load current path between two load terminals of the device. Furthermore, in the case of a controllable power semiconductor device, such as a transistor, the load current path can be controlled by means of an insulated electrode, usually referred to as the gate electrode. For example, upon receiving a corresponding control signal, from, for example, a driver unit, the control electrode can switch the power semiconductor device between a forward conducting state and a cutoff state. In some cases, the gate electrode may be located within a trench of the power semiconductor switch, the trench being, for example, a stripe configuration or a needle configuration. Some power semiconductor devices also provide reverse conductivity; during a reverse conducting state, the power semiconductor device conducts a reverse load current. Such devices can be designed so that their ability to conduct a load current in the forward direction is (magnitude-wise) essentially the same as their ability to conduct a load current in the reverse direction. A typical component that provides the ability to conduct a load current in both the forward and reverse directions is the reverse-conducting (RC) IGBT. Typically, the forward conducting state of an RC IGBT is controllable, for example, by applying a corresponding signal to the gate electrodes, while the reverse conducting state is typically not controllable. However, due to one or more diode structures within the RC IGBT, the RC IGBT automatically assumes the reverse conducting state if a reverse voltage is applied to the load terminals. It is of course possible to provide the ability to conduct current in reverse by means of a separate diode; e.g., a diode connected antiparallel to a regular (non-reverse-conducting) IGBT. However, the embodiments described here refer to the variant in which both the IGBT structure and the diode structures are monolithically integrated in the same chip. US Patent 2018 / 0269202A1 discloses a semiconductor device comprising a semiconductor substrate and multiple trench structures formed on the semiconductor substrate. The semiconductor substrate includes a first element region for forming a bipolar transistor with an insulated gate and a second element region for forming a diode, the semiconductor substrate forming a drift layer. The multiple trench structures comprise several gate trench structures provided on a front face of the first element region, each gate trench structure having an electrode provided therein that is based on a gate potential, and several floating trench structures provided on a front face of the second element region, each floating trench structure having an electrode provided therein that is floating (i.e., at a potential of no potential). US Patent 2012 / 0043581A1 discloses the following: In a semiconductor device, an IGBT cell comprises a trench extending through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, an emitter region of a first conductivity type in a surface section of the base layer, and a first contact region of a second conductivity type in the surface section of the base layer. The IGBT cell further comprises a floating layer (i.e., a potential-free layer) of the first conductivity type arranged within the base layer to divide the base layer into a first section comprising the emitter region and the first contact region, and a second section adjacent to the drift layer, and an intermediate insulating film arranged to cover one end of the gate electrode.A diode cell contains a second contact area of ​​the second conductivity type in the surface section of the base layer. US Patent 2018 / 0308839A1 describes a semiconductor device and a method for its fabrication. The device is designed to prevent an increase in the forward voltage of a first diode, even when a driver signal is applied to the gate electrode of an IGBT. For this purpose, the IGBT has a p-type body region. An anode region of the first diode has the same impurity level as the p-type body region of the IGBT. An anode region of a second diode is surrounded by an emitter groove, thus separating the anode region from the p-type body region of the IGBT. A high degree of controllability of an RC-IGBT is desired in order to control the RC-IGBT safely and effectively. SUMMARY According to one embodiment, an RC-IGBT comprises: an active region with an IGBT region and a diode region; a semiconductor body having a first side and a second side; a first load terminal on the first side and a second load terminal on the second side; multiple control trenches and multiple source trenches, wherein the multiple trenches are arranged parallel to each other along a first lateral direction and extending along a vertical direction into the semiconductor body, the multiple source trenches extending into both the IGBT region and the diode region; multiple IGBT measures and multiple diode measures in the semiconductor body, wherein the measures are laterally bounded along the first lateral direction by two of the multiple trenches.The IGBT measures each feature: a source region of a first conductivity type electrically connected to the first load terminal, and a body region of a second conductivity type electrically connected to the first load terminal and isolating the source region from another region of the first conductivity type of the RC-IGBT. The diode measures each feature: a first anode region of the second conductivity type electrically connected to the first load terminal.The RC-IGBT further comprises, in the semiconductor body and on the second side, both a diode emitter region of the first conductivity type, which forms part of the diode region and has a lateral extent in the first lateral direction that is at least 50% of the drift region thickness or at least 50% of the semiconductor body thickness; and an IGBT emitter region of the second conductivity type, which forms part of the IGBT region and has a lateral extent in the first lateral direction that is at least 70% of the drift region thickness or at least 70% of the semiconductor body thickness. The RC-IGBT further comprises, in the diode region, a second anode region of the second conductivity type, electrically connected to the first load terminal. The second anode region extends deeper along the vertical direction compared to the grooves in the diode region.The second anode region overlaps with the diode emitter region for at least 5% of the horizontal area of ​​the diode emitter region. According to another embodiment, a method for fabricating an RC-IGBT comprises: providing a semiconductor body having a first side and a second side; forming an active region with an IGBT region and a diode region; forming a first load terminal on the first side and a second load terminal on the second side; forming multiple control trenches and multiple source trenches, wherein the multiple trenches are arranged parallel to each other along a first lateral direction and extending along a vertical direction into the semiconductor body, the multiple source trenches extending into both the IGBT region and the diode region; forming multiple IGBT measures and multiple diode measures in the semiconductor body, wherein the measures are laterally bounded along the first lateral direction by two of the multiple trenches.The IGBT measures each feature: a source region of a first conductivity type electrically connected to the first load terminal, and a body region of a second conductivity type electrically connected to the first load terminal and isolating the source region from another region of the first conductivity type of the RC-IGBT. The diode measures each feature: a first anode region of the second conductivity type electrically connected to the first load terminal.The method further comprises: forming, in the semiconductor body and on the second side, both a diode emitter region of the first conductivity type, which forms part of the diode region and has a lateral extent in the first lateral direction that is at least 50% of the drift region thickness or at least 50% of the semiconductor body thickness; and an IGBT emitter region of the second conductivity type, which forms part of the IGBT region and has a lateral extent in the first lateral direction that is at least 70% of the drift region thickness or at least 70% of the semiconductor body thickness. The method further comprises forming, in the diode region, a second anode region of the second conductivity type, electrically connected to the first load terminal. The second anode region extends deeper along the vertical direction compared to the trenches in the diode region.The second anode region overlaps with the diode emitter region for at least 5% of the horizontal area of ​​the diode emitter region. The expert will discover additional features and advantages when reading the following detailed description and examining the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The parts in the figures are not necessarily to scale; the focus is instead on illustrating the principles of the invention. Furthermore, identical reference numerals in the figures denote corresponding parts. In the drawings: Fig. 1 schematically and by way of example shows a section of a horizontal projection of an RC-IGBT according to one or more embodiments; Fig. 2 schematically and by way of example shows a simplified representation of an RC-IGBT according to one or more embodiments; Fig. 3 schematically and by way of example shows a section of a vertical cross-section through an IGBT region of an RC-IGBT according to one or more embodiments; Fig. 4 schematically and by way of example shows a section of a vertical cross-section through a diode region of an RC-IGBT according to one or more embodiments; Fig.Figure 4 schematically and by way of example shows a section of a vertical cross-section through a diode region of an RC-IGBT according to one or more embodiments; and Figures 5-10 each schematically and by way of example show a section of a vertical cross-section through an RC-IGBT according to one or more embodiments. DETAILED DESCRIPTION The following detailed description refers to the accompanying drawings, which form a part thereof and in which specific embodiments in which the invention can be implemented are shown for illustrative purposes. Directional terms such as "above," "below," "below," "front," "behind," "rear," "leading," "trailing," etc., may be used with reference to the orientation of the described figures. Since parts of embodiments can be positioned in a number of different orientations, the directional terms are used for illustrative purposes and are in no way limiting. It is understood that other embodiments may be used and structural or logical modifications may be made without deviating from the scope of protection of the present invention. The following detailed description is therefore not to be understood as limiting, and the scope of protection of the present invention is defined by the attached claims. Various embodiments will now be described in detail, one or more examples of which are illustrated in the figures. The examples are given for illustrative purposes and are not intended to limit the invention. For instance, features shown or described as part of one embodiment can be used in or in combination with other embodiments to create yet another embodiment. The present invention is intended to include such modifications and variations. The examples are described using specific wording that is not to be interpreted as limiting the scope of protection of the appended claims. The drawings are not to scale and are for illustrative purposes only. For clarity, unless otherwise indicated, the same elements or manufacturing steps are designated by the same reference numerals in the various drawings. The term "horizontal," as used in this document, is intended to describe an orientation essentially parallel to a horizontal surface of a semiconductor substrate or semiconductor structure. This could be, for example, the surface of a semiconductor wafer, disk, or chip. For example, the first lateral direction X and the second lateral direction Y mentioned herein can both be horizontal directions, and the first lateral direction X and the second lateral direction Y can be perpendicular to each other. The term "vertical," as used in this document, is intended to describe an orientation that is essentially perpendicular to the horizontal surface, i.e., parallel to the normal direction of the surface of the semiconductor wafer / chip / plate. For example, the vertical direction Z mentioned herein may be an extension direction that is perpendicular to both the first lateral direction X and the second lateral direction Y. In this document, n-doped materials are referred to as the "first conductivity type," while p-doped materials are referred to as the "second conductivity type." Alternatively, reverse doping relationships can be used, so that the first conductivity type can be p-doped and the second conductivity type n-doped. In the context of this document, the terms "in ohmic contact," "in electrical contact," "in ohmic connection," and "electrically connected" are intended to describe the existence of a low-resistance electrical connection or current path between two regions, areas, zones, sections, or parts of a semiconductor device, or between different terminals of one or more devices, or between a terminal, metallization, or electrode and a section or part of a semiconductor device. Furthermore, in the context of this document, the term "in contact" is intended to describe the existence of a direct physical connection between two elements of the semiconductor device in question; for example, a junction between two elements in contact may not have any further intermediate element or the like. Furthermore, in the context of this document, the term "electrical isolation" is used, unless otherwise stated, in its generally accepted sense and thus describes the situation where two or more components are positioned separately from one another and there is no ohmic connection between them. However, electrically isolated components can still be coupled to each other, for example, mechanically coupled and / or capacitively coupled and / or inductively coupled. To give an example, two electrodes of a capacitor can be electrically isolated from each other and simultaneously mechanically and capacitively coupled to each other, for example, by means of insulation, e.g., a dielectric. Specific embodiments described in this document relate to an RC-IGBT having a strip or needle cell configuration, e.g., an RC-IGBT for use in a power converter or power supply. In one embodiment, such an RC-IGBT may be configured to carry a load current that is to be supplied to a load and / or provided by a power source. For example, the RC-IGBT may comprise multiple power semiconductor cells, such as monolithically integrated diode cells, derivatives of a monolithically integrated diode cell, monolithically integrated IGBT cells, and / or derivatives thereof. Such diode / transistor cells may be integrated into a power semiconductor module. Several such cells may form a cell array arranged in an active region of the RC-IGBT. The term “RC-IGBT”, as used in this document, is intended to describe a single-chip power semiconductor device capable of blocking high voltages and / or conducting high currents. In other words, embodiments of the RC-IGBT described herein are single-chip power semiconductor devices designed to handle high currents, typically in the ampere range, e.g., up to several amperes or up to tens or hundreds of amperes, and / or high voltages, typically of 200 V and above, e.g., up to at least 400 V or even more, e.g., up to at least 3 kV or even up to 10 kV or more. For example, the RC-IGBT described below can be a single-chip semiconductor device with a strip cell configuration, designed for use as a power component in a low, medium, and / or high-voltage application. Multiple single-chip power RC-IGBTs can be integrated into a module to form an RC-IGBT module, for example, for installation and use in a low, medium, and / or high-voltage application such as a large household appliance, a general-purpose drive, an electric drive train, a servo drive, a traction system, a (higher) power transmission device, etc. For example, the term “RC-IGBT”, as used in this document, does not refer to a logic semiconductor device used, for example, for storing data, calculating data and / or for other types of semiconductor-based data processing. Fig. 1 schematically and exemplarily shows a simplified horizontal projection of an RC-IGBT 1 according to one or more embodiments. The RC-IGBT 1 can, for example, be a single-chip RC-IGBT. Several such single-chip RC-IGBTs can be integrated into a power semiconductor module. The following description of the configuration of the RC-IGBT 1 also refers to Fig. 2-4. The RC-IGBT 1 has an active region 1-2 with one or more diode regions 1-22 and one or more IGBT regions 1-21. Both the one or more diode regions 1-22 and the one or more IGBT regions 1-21 are integrated into the same chip of the RC-IGBT 1. The active region 1-2 is surrounded by a boundary termination region 1-3. The boundary termination region 1-3 is located outside the active region 1-2. The boundary termination region 1-3 is laterally closed by a boundary 1-4. The boundary 1-4 can form the chip edge of the power semiconductor device 1, for example, resulting from a singulation / sawing processing step. In one embodiment, the vertical projection of a lateral perimeter 1-20 of the active area 1-2 defines the boundary between the active area 1-2 and the boundary closure area 1-3. In the present usage, the terms "edge termination region" and "active region" have the relevant technical meanings that a person skilled in the art typically attributes to them in the context of semiconductor devices such as RC IGBTs. That is to say, the active region 1-2 is primarily configured for conducting the load current in the forward direction (i.e., "IGBT load current") and in the reverse direction (i.e., "diode load current") and for switching purposes, while the edge termination region 1-3 primarily serves functions relating to reliable blocking capabilities, suitable guidance of the electric field, sometimes also charge carrier dissipation functions, and / or other functions relating to the protection and suitable termination of the active region 1-2. This document concerns the configuration of active area 1-2. As explained in more detail below, the RC-IGBT 1 can have IGBT region(s) 1-21 and diode region(s) 1-22 in the active region 1-2. The various regions 1-21 and 1-22 can be laterally distributed in the active region 1-2, with examples of such a distribution described in the pending German patent applications DE 10 2019 125 007.2 and DE 10 2020 107 277.5. In one embodiment, the active area 1-2 consists of the diode area(s) 1-22 and the IGBT area(s) 1-21. According to one or more embodiments described herein, none of the diode regions 1-22 are integrated into the IGBT region 1-21; in other words, in such embodiments, the diode regions 1-22 and the IGBT region 1-21 are not mixed. For example, in one embodiment, none of the one or more diode regions 1-22 has a semiconductor source region (reference numeral 101) of the first conductivity type that is electrically connected to the first load terminal (reference numeral 11) and is located adjacent to one of the control channels (reference numeral 14). ZB, one or more diode regions 1-22 (which, for example, in one embodiment are not integrated into / mixed with the IGBT region 1-21 and are not electrically connected to the first load terminal 11 via source regions 101 of the first conductivity type) form a substantial portion of the active region 1-2. Consequently, according to one embodiment, one or more of the diode regions 1-22 mentioned herein can each be a "larger-diode-only" section of the active region 1-2. For example, at least 1 / 5, at least 1 / 4, or at least 1 / 3 of the active region 1-2 can be occupied by the diode region(s) 1-22, and the remainder of the active region 1-2 can be occupied by the IGBT region(s) 1-21. Regardless of the chosen spatial distribution of the IGBT region 1-21 and the diode region 1-22 within the active region 1-2, it can be ensured that, with respect to a volume of the active region 1-2, the ratio between the total IGBT region 1-21 and the total diode region 1-22 is at least 1.5:1 or, respectively, at least 2:1, i.e., greater than or equal to 2:1. The chosen ratio may depend on the application in which the power semiconductor device 1 is used. For example, regardless of the chosen spatial distribution of the IGBT areas 1-21 and diode areas 1-22, it can be ensured that, with respect to a volume of the active region 1-2, the ratio between the IGBT area(s) 1-21 and the diode area(s) 1-22 is even greater than 3:1 or greater than 5:1. In one embodiment, at least 75% of the total volume of the active region 1-2 can be used to form the IGBT region(s) 1-21, and the remaining 25% (or a smaller percentage) of the active region 1-2 can be used to form the diode region(s) 1-22. Furthermore, one or more transition regions (not shown) can be arranged between a relevant diode region(s) 1-22 and a relevant IGBT region(s) 1-21. For example, according to one embodiment, the one or more transition regions are not equipped with a semiconductor source region and have a comparatively low anode emitter efficiency (for example, by having a higher dopant concentration in their section of the optional barrier region 105 (mentioned below) compared with their relevant section in the diode region(s) 1-22). If one or more transition areas are provided, according to one embodiment the section occupied thereby is less than 20%, less than 10% or even less than 5% of the total horizontal area of ​​the active area 1-2. In one embodiment, the total horizontal area of ​​the diode regions 1-22 forms a section of 5% to 40% or a section of 15% to 35% of the total horizontal area of ​​both the diode regions 1-22 and the IGBT region 1-21. The horizontal areas can be determined on a first side 110 of a semiconductor body 10, which can be a front side. Furthermore, the diode regions 1-22 can each have a horizontal area and a perimeter defining the horizontal area, wherein the diode regions 1-22 each follow the relationship that the square of the perimeter divided by the area is less than or equal to 40 or less than or equal to 30. The following also refers to "the" diode region 1-22 and "the" IGBT region 1-21. It is understood that the explanation given below with regard to these regions 1-21 and 1-22 can apply to each IGBT region 1-21 or, respectively, each diode region 1-22 provided in the active region 1-2. For example, if more than one IGBT region 1-21 is provided, each IGBT region 1-21 can be configured identically (where, for example, the IGBT regions 1-21 may differ from each other in their overall lateral extent or may have identical overall lateral extents). Accordingly, if several diode regions 1-22 are provided, each diode region 1-22 can be designed identically (where, for example, the diode regions 1-22 may differ in their total lateral extent or may have identical total lateral extents). Referring also to Fig. 2, the semiconductor body 10 of the RC-IGBT 1 can extend into both the active region 1-2 and the edge termination region 1-3 and has a first side (hereinafter also referred to as the front) 110 and a second side (hereinafter also referred to as the back) 120. The front 110 and the back 120 can vertically terminate the semiconductor body 10. A thickness d of the semiconductor body 10 can be defined as the distance, in the active region 1-2, along the vertical direction Z between the front 110 and the back 120. In the lateral directions, the semiconductor body 10 can be closed off by the edge 1-4 (as described above with reference to Fig. 1). Furthermore, both the front 110 and the back 120 can extend laterally along both the first lateral direction X and the second lateral direction Y. For example, both the front 110 and the back 120 can form a substantially horizontal surface of the semiconductor body 10. In one embodiment, the total lateral extent of the IGBT region 1-21 in at least one of the first lateral directions X or the second lateral direction Y is at least 50% of the semiconductor body thickness d. The total lateral extent of the IGBT region 1-21 can also be greater than 50% of the thickness d, e.g. greater than 2*d or even greater than 5*d. In one embodiment, the total lateral extent of each of the diode regions 1-22 in at least one of the first lateral directions X or the second lateral direction Y is at least the semiconductor body thickness d or at least the thickness of a drift region 100. The total lateral extent of the diode region 1-22 can also be greater than d. For example, the horizontal area of ​​at least two of the diode regions 1-22 each has a minimum lateral extent along the first lateral direction X and / or along the second lateral direction Y of at least 50% of the semiconductor body thickness d or at least 50% of the drift region thickness. Both the first load terminal 11 and a control terminal 13 can be located on the front side 110 of the semiconductor body, and a second load terminal 12 can be located on the back side 120 of the semiconductor body. The IGBT section 1-21 is designed to conduct a forward load current between the first load terminal 11 and the second load terminal 12, e.g. (in the case of an n-channel IGBT) if the electrical potential at the second load terminal 12 is greater than the electrical potential at the first load terminal 11. The forward load current can therefore be considered the IGBT load current. The diode section 1-22 is designed to conduct a diode load current (hereinafter also referred to as the "reverse load current") between the first load terminal 11 and the second load terminal 12, e.g., if the electrical potential at the second load terminal 12 is lower than the electrical potential at the first load terminal 11. The diode load current can therefore be considered a reverse load current. In one embodiment, the diode region 1-22, which conducts the diode load current, can be spatially separated from the IGBT region 1-21, which conducts the forward load current. As stated above, according to some embodiments, the diode region 1-22 is not part of the IGBT region 1-21, but is separated from it and, for example, does not have a source region 101 of the first conductivity type electrically connected to the first load terminal 11; rather, the diode region 1-22 is a “large-diode-only region” of the active region 1-2. ZB In one embodiment, the path of the forward load current formed in the semiconductor body 10 and the path of the diode load current formed in the semiconductor body 10 do not overlap significantly in space. For example, no or less than 20% or even less than 10% of the forward (IGBT) load current flows through the diode region(s) 1-22. Furthermore, in one embodiment, the current flow in the diode region 1-22 changes by less than 50%, less than 30%, or even less than 20% when a control signal 13-21 is changed (e.g., the control signal provided to the control electrodes 141 mentioned below). For example, the diode region 1-22 is independent of the control signal 13-21 (e.g., the control signal provided to control the electrodes 141 mentioned below). For example, the diode region 1-22 can be configured such that it conducts the diode load current as soon as the electrical potential (of typical polarity) at the second load terminal 12 is lower (by at least the internal threshold voltage of the diode region) than the electrical potential at the first load terminal 11, regardless of the control signal 13-21 provided to the IGBT region 1-21, that is, regardless of the voltage of the control electrodes 141. According to the terminology typically associated with RC-IGBTs, the control terminal 13 can be a gate terminal, the first load terminal 11 can be an emitter terminal and the second load terminal 12 can be a collector terminal. For example, the first load terminal 11 has a front-side metallization and / or the second load terminal 12 has a back-side metallization. On the front side 110, the semiconductor body 10 can form an interface with the front-side metallization. On the back side 120, the semiconductor body 10 can form an interface with the back-side metallization. In one embodiment, the first load terminal 11 (e.g., the front face metallization), that is, along the first lateral direction X and / or the second lateral direction Y and / or combinations thereof, overlaps with the active region 1-2. It should be noted that the first load terminal 11 can be laterally structured, e.g., to establish local contacts with the semiconductor body 10 on the front face 110. As exemplified in Figs. 3 and 4, the local contacts can be established using first contact plugs 111 that penetrate an insulating structure 119 to contact probes 17, 18 formed in the semiconductor body 10. Similarly, in one embodiment, the second load terminal 12 (e.g., the backside metallization), that is, along the first lateral direction X and / or the second lateral direction Y and / or combinations thereof, overlaps with the active region 1-2. It should be noted that the second load terminal 12 is, for example, not structured but homogeneously and monolithically formed on the backside of the semiconductor body 120, e.g., to establish a laterally homogeneous contact (i.e., a continuous contact surface) with the semiconductor body 10 on the backside 120. Such a homogeneous structure can also be implemented in regions where the second load terminal 12 overlaps with the edge termination region 1-3. For example, the lateral boundary of the active region 1-2 is defined by the lateral boundary of the outermost power cell(s) of the IGBT region(s) 1-21 and / or the diode region(s) 1-22. Consequently, the lateral boundary of the active region 1-2 can be defined at the front face 110 (see Fig. 1). For example, all functional elements necessary to enable the conduction of the diode load current and the forward load current are present in the active region 1-2 of the RC-IGBT 1, e.g. B. including at least a part of the first load terminal 11 (e.g. a front metal contact of the same, e.g. one or more of the first contact plugs 111), a source region / source regions 101, a body region 102 (or respectively a first anode region 1061), a drift region 100, an IGBT emitter region 103, a diode emitter region 104 and the second load terminal 12 (e.g. a back metal of the same), as is explained in more detail below. Furthermore, according to one embodiment, the lateral transition (along the first or second lateral direction X; Y or combinations thereof) between the active area 1-2 and the edge termination area 1-3 can extend exclusively along the vertical direction Z. As explained above, the lateral boundary of the active area 1-2 can be defined at the front 110, and a vertical projection along the vertical direction Z of such a defined lateral boundary can therefore theoretically be seen at the rear 120. Referring in more detail to Figures 3 to 4, several trenches can extend into the semiconductor body 10. The trenches can have one or more control trenches 14, one or more blind trenches 15, and / or one or more source trenches 16. The trenches 14, 15, and 16 are arranged parallel to each other along the first lateral direction X and extend into the semiconductor body 10 along the vertical direction Z. Each trench can have a strip configuration extending along the second lateral direction Y from a corresponding first region of the lateral circumference 1-20 (see Figure 1) to a corresponding second region of the lateral circumference 1-20 opposite the corresponding first region. The trenches 14, 15, and 16 each contain a corresponding trench electrode 141, 151, and 161, respectively, which is connected to a defined electrical potential, e.g.,The potential of one of the control terminals 13 or the first load terminal 11 may or may not be electrically connected. For example, the trench electrodes 151 of the blind trenches 15 are electrically floating, i.e., not connected to a defined electrical potential. That is, the electrical potentials of the IGBT trench electrodes 141, 151, 161 can be different from each other. In one embodiment, the blind trenches 15 are not implemented; i.e., the RC-IGBT 1 then has trenches only in the form of control trenches 14 and source trenches 16. The trench electrodes 141, 151, 161 are isolated from the semiconductor body 10 by a corresponding trench insulator 142, 152, 162. Two adjacent trenches can define a respective mesa in the semiconductor body 10. The meses feature IGBT meses 17 and diode meses 18. For example, trenches 14, 15, and 16 can each have a strip configuration, meaning that the trench length in question (e.g., along the second lateral direction Y) is much greater than the trench width in question (e.g., along the first lateral direction X). Consequently, mesas 17 and 18 can also each have a strip configuration. The trench electrodes 141 can be electrically connected to the control terminal 13 and are therefore referred to as control electrodes 141. The control signal 13-21 can be supplied to the control electrodes 141 via the control terminal 13. If the optional trenches 15 are provided, the trench electrodes 151 (or a subset thereof) can be electrically floating and are therefore referred to as floating trench electrodes 151. In another embodiment, the trench electrodes 151 (or a subset thereof) are electrically connected to the IGBT control terminal 13, but do not directly control the conduction of the load current, since no electrically connected source region 101 (connected to the first load terminal 11) is located adjacent to the relevant blind trench 15. In yet another embodiment, the trench electrodes 151 (or a subset thereof) are connected to an electrical potential that differs from the electrical potential of the control terminal 13 and the electrical potential of the first load terminal 11. The trench electrodes 161 can be electrically connected to the first load connection 11 and are therefore referred to as source trench electrodes 161. The trench types can each have the same dimensions in terms of width along the first lateral direction X and depth along the vertical direction Z (e.g. a distance between front 110 and a trench bottom) and / or length along the second lateral direction Y. The IGBT area 1-21 can have multiple IGBT cells, each IGBT cell having a specific trench pattern, i.e. a lateral sequence (along the first lateral direction X) of trenches of special types, e.g. one or more control trenches 14, zero or more blind trenches 15 and zero or more source trenches 16 and zero or more other trenches. Similarly, the diode regions 1-22 can each have a number of diode cells, each diode cell having a specific trench pattern, i.e. a lateral sequence of trenches of special types, e.g. zero or more blind trenches 15, one or more source trenches 16 and / or zero or more other trenches. In one embodiment, none of the diode regions 1-22 has one of the control trenches 14; for example, there is no trench electrode electrically connected to the control terminal 13 in the diode regions 1-22. For example, none of the control trenches 14 extends into one or more of the diode regions 1-22. For example, the diode regions 1-22 are separated from the IGBT region 1-21 and, in particular, from the control trenches 14 (i.e., from the control electrodes 141). This can make it possible to achieve desired diode characteristics, such as little or no dependence on the potential of the control electrodes 141 and / or low switching losses. According to one embodiment, it can be provided that the trenches in both the IGBT region 1-21 and the diode region 1-22 are arranged laterally next to each other according to the same division; e.g., the mesa width (i.e., the distance along the first lateral direction X between two adjacent trenches) does not change between regions 1-21 and 1-22. In one embodiment, the mesa width may not exceed 1 / 30 or 1 / 60 of the semiconductor body thickness d. In one embodiment, trenches 14, 15, and 16 can each have the same trench depth (total vertical extent). For example, the mesa width is no more than 50% or no more than 30% of the trench depth. In one embodiment, the mesa width is no more than 10 µm, or no more than 5 µm, or no more than 1 µm. For example, in the latter case, adjacent trenches are consequently offset laterally by no more than 1 µm. As explained above, the mesa width can be identical for both regions 1-21 and 1-22, or it can vary between the regions. In another embodiment, the mesa width in the IGBT region 1-21 is less than 80%, less than 65%, or even less than 50% of the mesa width in the diode region 1-22. For example, the average density of all the trench electrodes 141, 151, 161 can also be the same for both regions 1-21 and 1-22. However, the trench pattern, e.g., the arrangement of the different trench types, can vary between regions 1-21 and 1-22. One exemplary variation is that the density of control electrodes 141 in the IGBT region 1-21 is at least twice as high as the density of control electrodes 141 in the diode region 1-22 (which can even be zero). In an illustrative example, the total number of trench electrodes 141, 151, 161 in the IGBT range 1-21 is 120, and 40 of these trench electrodes are control electrodes 141, resulting in a control electrode density of 1 / 3. For example, the total number of trench electrodes in the diode range 1-22 is fifty, and no more than five of these are control electrodes 141, resulting in a control electrode density of no more than 1 / 10. In one embodiment, the trench electrodes in the diode range 1-22 have no control electrode 141. In one embodiment, at least 50% of the trench electrodes of the trenches in the diode range 1-22 are electrically connected to the first load terminal 11, i.e., at least 50% of the trench electrodes of the trenches in the diode range 1-22 are source trench electrodes 151 of source trenches 16. In one embodiment, the trench electrodes in the diode range 1-22 are each source trench electrodes 141. In one embodiment, at least 50% of the trench electrodes of the trenches in the IGBT area 1-21 are electrically connected to the first load connection 11, i.e., at least 50% of the trench electrodes of the trenches in the IGBT area 1-21 are source trench electrodes 151 of source trenches 16. For example, the trench electrodes in the diode range 1-22 are either source trench electrodes 161 or blind trench electrodes 151. Furthermore, all or some of the diode measuring devices 18 in the diode range 1-22 can be electrically connected to the first load terminal 11, e.g. by means of the first contact plugs 111. Referring further to Fig. 1-4, the RC-IGBT 1 also has a drift region 100 of the first conductivity type formed in the semiconductor body 10 and extending into the diode region 1-22 and the IGBT region 1-21. A body region 102 of the second conductivity type is formed in the IGBT meses 17 and the diode meses 18 of the semiconductor body 10 in the diode regions 1-22 and the IGBT region 1-21. At least sections of the body region 102 are electrically connected to the first load terminal 11. The body region 102 can form pn junctions to mesa subregions of the first conductivity type. Furthermore, one or more meses (not shown) in at least one from the diode range 1-22 and the IGBT range 1-21 can be not electrically connected to the first load terminal 11 in order to form ‘blind mesas’, i.e., meses not used for conducting load current, neither for conducting forward load current nor for conducting reverse load current. In IGBT region 1-21, source regions 101 of the first conductivity type are arranged on the front face 110 and electrically connected to the first load terminal 11. The source regions 101 are, for example, only provided locally in IGBT region 1-21 and do not extend, for example, into diode regions 1-22. The body region 102 can be arranged in electrical contact with the first load terminal 11, e.g., by means of the first contact plugs 111. In each IGBT cell of the IGBT range 1-21, at least one of the source regions 101 of the first conductivity type can also be provided in electrical contact with the first load terminal 11, e.g., also by means of the first contact plugs 111. A larger part of the semiconductor body 10 is configured as the drift region 100, which is of the first conductivity type and can interface with the body region 102, forming a pn junction 1021 with it. The body region 102 isolates the source regions 101 from the drift region 100. The term "body region 102" here refers to the semiconductor region of the second conductivity type electrically connected to the first load terminal 11 at the front face 110. This region 102 extends into both the IGBT region 1-21 and the diode region 1-22 (which is consequently also referred to here as the "first anode region 1061"). The implementation of the body region 102 in the IGBT region 1-21 can differ from the implementation of the body region 102 in the diode regions 1-22, e.g., B. with regard to the dopant concentration, the dopant dose, the doping profile and / or the spatial extent, may or may not differ.To distinguish the body region in the diode area 1-22, this is called the first anode region 1061 with reference to Fig. 5-10. Upon receiving the control signal 13-21, e.g., provided by a gate driver unit (not shown), each control electrode 141 can induce an inversion channel in a region of the body area 102 adjacent to the respective control electrode 141. Thus, the number of IGBT cells can each be configured to conduct at least a portion of the forward load current between the first load terminal 11 and the second load terminal 12. In one embodiment, the drift region 100 extends along the vertical direction Z until it merges with a field stop layer 108, wherein the field stop layer 108 is also of the first conductivity type, but has a higher dopant dose compared to the drift region 100. The field stop layer 108 is typically of a significantly smaller thickness than the drift region 100. The drift region 100 or, if present, the field stop layer 108, extends along the vertical direction Z until it or they either border an IGBT emitter region 103 of the IGBT range 1-21 and a diode emitter region 104 of the diode range 1-22. The diode emitter region 104 is of the first conductivity type and is electrically connected to the second load terminal 12 and coupled to the drift region 100, e.g. by means of the field stop layer 108. The IGBT emitter region 103 is of the second conductivity type and is electrically connected to the second load terminal 12 and coupled to the drift region 100, e.g. by means of the field stop layer 108. Both the IGBT emitter area 103 of the IGBT area 1-21 and the diode emitter area 104 of the diode area 1-22 can be arranged in electrical contact with the second load terminal 12. Overall, the IGBT emitter region 103 can act as an emitter of the second conductivity type. Furthermore, in some embodiments, the IGBT emitter region 103 does not have a region of the first conductivity type, which exhibits a fairly high dopant concentration, typically in the range of 10¹⁶ cm⁻³ to 10²⁰ cm⁻³; rather, according to some embodiments, the diode-cathode region 104 is formed exclusively in diode region 1-22. In other embodiments, the IGBT emitter region 103 can have one or more regions of the first conductivity type, e.g., only in a specific subregion of the IGBT emitter region 103, as described below. In one embodiment, the average dopant concentration of the drift area 100 can be in the range of 1012cm-3 to 1014cm-3. In one embodiment, the dopant concentration of the source areas 101 in the IGBT range 1-21 can each be in the range of 1019cm-3 to 1021cm-3. In one embodiment, the dopant concentration of body region 102 can be in the range of 1016 cm⁻³ to 1018 cm⁻³. As described above, for example, the dopant concentration of body region 102 in IGBT region 1-21 can be the same as or different from the dopant concentration of body region 102 (i.e., of the first anode region 1061, see Fig. 5-10) in diode region 1-22. In one embodiment, the dopant concentration of the (optional) field stop layer 108 can be in the range of 1014cm-3 to 3*1016cm-3. In one embodiment, the dopant concentration of the IGBT emitter region 103 can be in the range of 1016 cm⁻³ to 1018 cm⁻³. However, in another embodiment, the net dopant concentration can vary along the lateral extent of the IGBT emitter region 103 (and even change its polarity). In one embodiment, the dopant concentration of the diode emitter region 104 can be in the range of 1019 cm⁻³ to 1021 cm⁻³. However, in another embodiment, the net dopant concentration can vary along the lateral extent of the diode emitter region 104 (and even change its polarity). It should be noted that the trench patterns shown in Fig. 3 and Fig. 4 are only examples; other trench patterns are possible and are described below. In one embodiment, the diode region 1-22 is not equipped with source regions 101, e.g., at least not with source regions 101 adjacent to any of the control channels 14. For example, no doped semiconductor region of the first conductivity type is electrically connected to the first load terminal 11 in the diode region 1-22. Rather, to form the diode configuration in the diode region 1-22 for conducting the diode load current, only the body region 102 is electrically connected to the first load terminal 11, wherein the body region 102 forms the pn junction 1021 with, for example, the drift region 100, and along the vertical direction Z towards the second load terminal 12, below the pn junction 1021, lies a semiconductor path of only the first conductivity type, which is not interrupted by further regions of the second conductivity type. As described above, according to one embodiment, the IGBT region 1-21, in contrast to the diode region 1-22, has at least one IGBT cell with a region of the source region 101 connected to the first load terminal 11 and adjacent to one of the control trenches 14, and isolated from the drift region 100 by the body region 102. For example, the lateral boundary of the IGBT region 1-21 is defined by the lateral boundary of the outermost IGBT cell(s). Consequently, the lateral boundary of the IGBT region 1-21 can be defined at the front face 110. This lateral boundary can be defined by an outermost source region / outermost source regions 101. For example, all functional elements for enabling the conduction of the forward load current / IGBT load current are present in a vertical projection of the IGBT region 1-21 of the power semiconductor device 1, e.g. B. including at least the first load connection 11 (e.g. a front metal contact of the same, e.g.one or more of the first contact plugs 111), the source region(s) 101, the body region 102, the drift region 100, the IGBT emitter region 103, and the second load connection 12 (e.g., a back metal of the same). Furthermore, these functional elements can extend along the entire lateral extent of the IGBT region 1-21. In one embodiment, the first contact plugs 111 are part of a contact plug structure of the power semiconductor device 1. Each of the first contact plugs 111 can be configured to establish contact with one of the mesa 17, 18 in order to electrically connect this mesa 17 / 18 to the first load terminal 11. As shown, each first contact plug 111 can extend from the front face 110 along the vertical direction Z into the respective mesa 17 / 18. Figures 5, 6, 7, 8, 9 to 10 show various embodiments of the RC-IGBT 1. According to these embodiments, the RC-IGBT 1 has: the active region 1-2 with the IGBT region 1-21 and the diode region 1-22; the semiconductor body 10 with the first side 110 and the second side 120; the first load terminal 11 on the first side 110 and the second load terminal 12 on the second side 120; the multiple control trenches 14 and the multiple source trenches 16, wherein the multiple trenches 14, 16 are arranged parallel to each other along the first lateral direction X and extending along the vertical direction Z into the semiconductor body 10, wherein the multiple source trenches 16 extend into both the IGBT region 1-21 and the diode region 1-22; the multiple IGBT sensors 17 and multiple diode sensors 18 in the semiconductor body 10, wherein the sensors 17, 18 are laterally bounded along the first lateral direction X by two of the multiple trenches 14, 16. The IGBT measures 17 each have: at least one source region 101 of the first conductivity type electrically connected to the first load terminal 11, and the body region 102 of the second conductivity type electrically connected to the first load terminal 11 and isolating the source region 101 from another region of the first conductivity type of the RC-IGBT 1. The diode gauges 18 each have: the first anode area 1061 of the second conductivity type electrically connected to the first load terminal 11. The RC-IGBT 1 further comprises: in the semiconductor body 10 and on the second side 120, both the diode emitter region 104 of the first conductivity type, which forms part of the diode region 1-22 and has a lateral extent in the first lateral direction X that is at least 50% of the drift region thickness or at least 50% of the semiconductor body thickness d; and the IGBT emitter region 103 of the second conductivity type, which forms part of the IGBT region 1-21 and has a lateral extent in the first lateral direction X that is at least 70% of the drift region thickness or at least 70% of the semiconductor body thickness d. The RC-IGBT further features, in diode region 1-22, a second anode region 1062 of the second conductivity type, electrically connected to the first load terminal 11. Compared to the trenches 14, 16 in diode region 1-22, the second anode region 1062 extends deeper along the vertical direction Z. The second anode region 1062 overlaps with the diode emitter region 104 for at least 5% of the horizontal area of ​​the diode emitter region 104. According to the embodiments shown by way of example in Figs. 5-10, an overvoltage during the switch-on of the diode region(s) 1-22 of the RC-IGBT 1 (e.g., when a load current from another RC-IGBT is commutated into the RC-IGBT 1 and the RC-IGBT 1 acts as a freewheeling diode) can be reduced based on the second anode region 1062. At the same time, the diode characteristics of the RC-IGBT 1 can be largely independent of the voltage of the control signal 13-21. These advantages can be particularly beneficial if the RC-IGBT 1 is arranged in a half-bridge configuration. Unless otherwise stated, the description relating to Figs. 1-4 applies equally to Figs. 5-10. In one embodiment, one or more additional measuring devices are provided in at least one of the diode regions 1-22 and the IGBT region 1-21, wherein the one or more additional measuring devices are each different from both the diode mesa 18 and the IGBT mesa 17. For example, measuring devices are provided in the IGBT region 1-21 that do not have a source region 101 and / or that are not electrically connected to the first load terminal 11. For example, the drift area thickness mentioned herein is the distance, along the vertical direction Z, between the pn junction of one of the IGBT probes 17 of the IGBT range 1-21 and a junction between the drift area and the field stop layer 108, wherein the junction may be located, for example, at a vertical level where the dopant concentration, along the vertical direction Z, has increased by at least a factor of two. Although Figures 5-10 show a clear transition between the first anode region 1061 and the second anode region 1062, it should be noted that according to one or more embodiments, the dopant concentrations in both regions 1061 and 1062 may be similar (e.g., the dopant concentration of the first anode region 1061 may be somewhat lower compared to the dopant concentration of the second anode region 1062, for example, where the first and second anode regions 1061 are adjacent), so that the transition between the regions 1061 and 1062 is not clearly discernible. For example, the first anode region 1061 may overlap the second anode region 1062 or merge seamlessly with it. Thus, the first anode region 1061 and the second anode region 1062 can form an uninterrupted region of the second conductivity type in the diode mesa 18 in question. With further reference to Figures 5-10, some additional optional aspects will be described below: The anode region 1062 can have a dopant dose in the range of 1*1012cm-2 to 1*1014cm-2 or in the range of 1*1012cm-2 to 2*1013cm-2, or in the range of 1*1013cm-2 to 5*1014cm-2. In the diode measures 18, the first anode region 1061 can have the same dopant dose, e.g. in the range of 5*1012cm-2 to 1*1014cm-2. In the IGBT measurements 18, the body region 102 can have the same doping dose, e.g. in the range of 5*1012cm-2 to 1*1014cm-2. In this usage, the term average dopant concentration of a semiconductor region refers to the spatial average dopant concentration, e.g., the number of dopants divided by the volume of the region. In this usage, the term dopant refers to the dopant concentration integrated along the vertical direction Z. For example, the average dopant concentration of the second anode region 1062 ranges from 50% to 1000% of the average dopant concentration of the first anode regions 1061. Consequently, the average dopant concentration of the second anode region 1062 can be identical to, lower than, or higher than the average dopant concentration of the first anode regions 1061. The choice of concentration may depend, for example, on the designated emitter efficiency of diode region 1-22. For instance, a lower average dopant concentration in the second anode region 1062 may be suitable for limiting the emitter efficiency in diode region 1-22. Furthermore, the average dopant concentration of the first anode regions 1061 can be lower compared to the average dopant concentration of the body regions 102. It is noted here that highly doped contact regions can be placed directly beneath the contact plugs 111, e.g., by implantation through the contact hole. The dopant doses and the average dopant concentrations of the body regions 102 and the first and second anode regions 1061, 1062 are defined without the doping of these highly doped contact regions. In one embodiment, the body region 102 of the IGBT region 1-21 does not extend as far along the Z-direction compared to the second anode region 1062. For example, the second anode region 1062 extends below the vertical level of the trench bottoms, whereas the body region 102 does not extend as far along the vertical Z-direction. For example, the pn junction 1021 formed by the body region 102 is located above the vertical level of the trench bottoms, and a pn junction 1065 formed by the second anode region 1062 is located below the vertical level of the trench bottoms. In one embodiment, the IGBT region 1-21 can have both the source trenches 16 and the control trenches 14, e.g., arranged alternately along the first lateral direction X. The diode region 1-22, for example, has only source trenches 16. The source trench electrodes 161 can be electrically connected to the first load terminal 11 based on second contact plugs 112. In one embodiment, the IGBT region 1-21 and the diode region 1-22 are strictly separated from each other. For example, the second anode region 1062 does not extend, or only minimally extends, into the IGBT region 1-21 (see, for example, Fig. 5, where the second anode region 1062 overlaps with no more than one of the source regions 101 of the IGBT region 1-21, but not with a channel region of the IGBT region 1-21). Furthermore, it can be provided that the diode region 1-22 does not have an IGBT mesa 17 (i.e., a mesa that has a source region 101 electrically connected to the first load terminal 11). Accordingly, it can be ensured that the diode meses 18 are each free of a region of the first conductivity type that is electrically connected to the first load terminal 11. It may also be provided that the diode area 1-22 does not have a control trench 14 (i.e., a trench that has a trench electrode electrically connected to the control terminal 13).In one embodiment, the second anode region 1062 overlaps a horizontal interface surface formed by the diode measures 18 in the diode region 1-22 with a section of the underlying semiconductor body 10 for at least 10% and possibly up to 100%. That is, the second anode region 1062 can either extend continuously and horizontally (e.g., along the first and second lateral directions X and Y) through the entire diode region 1-22, resulting in a 100% overlap with the interface surface (see Fig. 5), or the second anode region 1062 can have a lateral structure, which is explained with reference to Figs. 6-10, resulting in an overlap of less than 100% with the interface surface. Accordingly, it can also be provided that the second anode area 1062 overlaps with the diode emitter area 104 for no more than 50% of the horizontal area of ​​the diode emitter area 104.The anode efficiency of the RC-IGBT 1 can be adjusted by designing the lateral structure of the second anode region 1062. Referring to the embodiment shown in Fig. 6, the second anode region 1062 is provided with a lateral structure. For example, the second anode region 1062 has (or consists of) two or more anode sub-regions 1062-1, 1062-2 spaced apart from each other along the first lateral direction X and / or along the second lateral direction Y. For example, the anode sub-regions 1062-1, 1062-2 each have a lateral extent in the first lateral extent X ranging from one to 20 times the mesa width, and the distance along the first lateral direction between two adjacent anode sub-regions 1062-1, 1062-2 can range from twice to 40 times the mesa width.Furthermore, the anode sub-regions 1062-1, 1062-2 can each have a lateral extension in the second lateral extension Y, corresponding to the lateral extension of the trench(s) and mesa(s) with which they overlap (alternatively, the anode sub-regions 1062-1, 1062-2 can also be structured along the second lateral direction Y). Accordingly, the two or more anode sub-regions 1062-1, 1062-2 can each have a strip configuration, wherein the strip configuration in question extends parallel to the diode meses 18 (as shown in Fig. 6), perpendicular to them, or in another horizontal direction. The two or more anode sub-regions 1062-1, 1062-2 can therefore each have a first lateral extent which is at least one width of one of the diode masses 18 in the first lateral direction X, and / or a second lateral extent perpendicular to it which is at least twice the first lateral extent.Furthermore, the anode sub-regions 1062-1, 1062-2 can be arranged parallel to each other, wherein a minimum distance between any two of the two or more anode sub-regions 1062-1, 1062-2 in a direction parallel to the relevant first lateral extension is at least the diode mesa width WM. According to one embodiment, the two or more anode sub-regions 1062-1, 1062-2 provide a low turn-on overvoltage of the diode region 1-22, as they can rapidly inject holes without being obstructed by the grooves 16. Furthermore, during the diode's forward conduction state (at low voltage), electrons can exit the semiconductor body 10 towards the first load terminal 11 through the (optionally less heavily doped and shallower continuous) first anode region 1061, thus preventing excessive hole injection. A variation of the embodiment of Fig. 6 is shown in Fig. 7. There, the anode sub-regions 1062-1 to 1062-3 are provided with a respective smaller first lateral extent (which is, for example, approximately 100% to 150% of the mesa width, e.g., so that only one respective diode mesa 18 is covered), and with a distance to each other that is approximately twice the first lateral extent. It is noted here that a further pn transition 1064 formed by a transition between the first anode region 1061 and the drift region 100 may be located at essentially the same vertical level as the pn transition 1021 (i.e. above the trench bottoms), whereas the pn transitions 1065 formed by the anode subregions 1062-1 to 1062-3 are located at a lower level, e.g. below the trench bottoms. However, as shown by the difference between Fig. 7 and Fig. 8, the first anode regions 1061 in the diode region 1-22 may have at least one of a lower dopant concentration and a lower dopant dose compared with the body regions 102, which may be reflected in the fact that the further pn transitions 1064 are arranged at a higher vertical level compared with the vertical level of the pn transitions 1021 in the IGBT region 1-21.For example, the distance DPN along the vertical direction Z between two pn junctions 1021 and 1064 can be in the range of 0 µm to 2 µm. It should also be noted that the second anode area 1062 or each of its anode sub-areas 1062-1, ... is electrically connected to the first load terminal 11. Referring to Fig. 9, the diode region 1-22 can, in one embodiment, have several control grooves 14. In such a case, the control grooves 14 in the diode region 1-22 can each be laterally flanked by two of the diode surfaces 18. Furthermore, the anode subregions 1062-1, ... can be arranged such that the anode subregions 1062-1, ... each overlap with one of the control grooves 14 and at least partially with the adjacent diode surfaces 18, as shown in Fig. 9. Such a structure can have the advantage that the control grooves 14 can be continued from the IGBT region 1-21 to the diode region 1-22, but do not (or hardly) affect the diode properties of the RC-IGBT 1. The density of the control grooves 14 in the diode range 1-22 can be the same as in the IGBT range 1-21 or different, e.g. smaller. Referring to Fig. 10, in one embodiment, the RC-IGBT 1 can further have a barrier region 105 of the first conductivity type in each or some of the diode mesa 18 in the diode region 1-22, below and in contact with the first diode regions 1061 or below and offset from first anode regions 1061 along the vertical direction Z. The barrier regions 105 can have a dopant concentration at least 100 times higher compared with the dopant concentration of the drift region 100. For example, the barrier regions 105 are arranged such that they do not overlap with the second anode region 1062 or, respectively, one of its anode subregions 1062-1, ... For example, the extent of the barrier regions 105 terminates along the vertical direction Z within the respective diode mesa 18; dh none of the barrier areas 105 extends further along the vertical direction Z than the trench bottoms.Accordingly, the first anode regions 1061 or a subset thereof can be coupled to the drift region 100 via a relevant barrier region 105. Barrier regions 105 can also be implemented in one or more of the IGBT meters 17 in the IGBT area 1-21. The barrier regions 105 can enable the reduction of the emitter efficiency of the first anode region 1061 and thus a reduction of switching losses. Instead of contact plugs 111, planar contacts can also be used to establish the electrical connection between the IGBT and diode measuring devices 17, 18 and the first load connection 11. This document also describes a method for fabricating an RC-IGBT. In one embodiment, the method comprises: providing a semiconductor body having a first side and a second side; forming an active region with an IGBT region and a diode region; forming a first load terminal on the first side and a second load terminal on the second side; forming multiple control trenches and multiple source trenches, wherein the multiple trenches are arranged parallel to each other along a first lateral direction and extending along a vertical direction into the semiconductor body, the multiple source trenches extending into both the IGBT region and the diode region; forming multiple IGBT measures and multiple diode measures in the semiconductor body, wherein the measures are laterally bounded along the first lateral direction by two of the multiple trenches.The IGBT measures each feature: a source region of a first conductivity type electrically connected to the first load terminal, and a body region of a second conductivity type electrically connected to the first load terminal and isolating the source region from another region of the first conductivity type of the RC-IGBT. The diode measures each feature: a first anode region of the second conductivity type electrically connected to the first load terminal.The method further comprises: forming, in the semiconductor body and on the second side, both a diode emitter region of the first conductivity type, which forms part of the diode region and has a lateral extent in the first lateral direction that is at least 50% of the drift region thickness or at least 50% of the semiconductor body thickness; and an IGBT emitter region of the second conductivity type, which forms part of the IGBT region and has a lateral extent in the first lateral direction that is at least 70% of the drift region thickness or at least 70% of the semiconductor body thickness. The method further comprises forming, in the diode region, a second anode region of the second conductivity type, electrically connected to the first load terminal. The second anode region extends deeper along the vertical direction compared to the trenches in the diode region.The second anode region overlaps with the diode emitter region for at least 5% of the horizontal area of ​​the diode emitter region. Embodiments of the RC-IGBT manufacturing process correspond to the embodiments of the RC-IGBT 1 set out above. For example, the formation of the first anode region 1061 and the second anode region 1062, or its respective anode subregions 1062-1,... may include performing at least one implantation processing step. This at least one implantation processing step may include a masked implantation processing step. According to a first variant, a low-energy implantation processing step (e.g., with an implantation energy in the range of 25 keV to 150 keV) is performed. The implanted dopants can then undergo a (e.g., deep) diffusion processing step to form the second anode region 1062 or its anode subregions 1062-1,... Subsequently, a further implantation processing step and / or a further diffusion processing step can be performed to form the first anode regions 1061. According to a second variant, a high-energy implantation processing step (e.g., with an implantation energy of over 300 keV or over 600 keV) is performed, such that the implanted dopants accumulate at a fairly deep vertical level, e.g., at a level corresponding to half the trench depth. This eliminates the need for a deep diffusion processing step. The doping dose of the second anode region 1062, or its anode subregions 1062-1,..., can be in the range of 1 × 10¹² cm⁻² to 1 × 10¹⁴ cm⁻² or in the range of 1 × 10¹² cm⁻² to 2 × 10¹³ cm⁻², for example, if the second variant (high-energy implantation) is chosen. For example, in the case of the second variant, the implantation dose for the high-energy implantation processing step to form the second anode region 1062 (or its anode subregions 1062-1,...) is in the range of 20% to 200% of the implantation dose chosen to form the first anode region 1061. The dopant dose of the second anode region 1062, or its anode subregions 1062-1,..., can range from 1 × 10¹³ cm⁻² to 5 × 10¹⁴ cm⁻², for example, if the first variant (low-energy implantation and deep diffusion) is chosen. For instance, in the case of the first variant, the implantation dose for the low-energy implantation processing step to form the second anode region 1062 (or its anode subregions 1062-1,...) is greater than the dose chosen to form the first anode region 1061. The preceding section described embodiments and corresponding processing methods relating to an RC-IGBT. For example, these RC-IGBTs are based on silicon (Si). Accordingly, a monocrystalline semiconductor region or a monocrystalline semiconductor layer, e.g., the semiconductor body 10 and its regions / zones, e.g., regions, etc., can be a monocrystalline Si region or a monocrystalline Si layer. In other embodiments, polycrystalline or amorphous silicon can be used. For example, the dopant concentration and dopant dose values ​​described above refer to embodiments in which Si is chosen as the material of the semiconductor body 10. It is understood, however, that the semiconductor body 10 and its regions / zones can be made from any semiconductor material suitable for fabricating a semiconductor device. Examples of such materials include, but are not limited to, elemental semiconductor materials such as silicon (Si) or germanium (Ge), group IV compound semiconductor materials such as silicon carbide (SiC) or silicon germanium (SiGe), and binary, ternary, or quaternary III-V semiconductor materials such as gallium nitride (GaN), gallium arsenide (GaAs), aluminum gallium nitride (AlGaN), and aluminum indium nitride (AlInN). Si, SiC, GaAs, and GaN materials are currently the most commonly used for power semiconductor switching applications. For example, for embodiments in which SiC is chosen as the material of the semiconductor body 10, the dopant concentrations and doses described above may need to be adjusted. For example, compared to the doses and concentrations described above, in the case of SiC the dopant concentrations are increased by a factor of ten or a factor of 100, and the dopant doses are increased by a factor of between three and ten. Spatially relative terms such as "under," "below," "lower," "above," "upper," and the like are used to facilitate description and explain the positioning of one element relative to another. These terms are intended to encompass various orientations of the building element in question, including orientations other than those shown in the figures. Furthermore, terms such as "first," "second," and the like are also used to describe different elements, areas, regions, etc., and are likewise not intended to be restrictive. The same terms consistently refer to the same elements throughout the description. In the present usage, the terms “with”, “containing”, “including”, “comprehensive”, “exhibiting” and the like are open terms that indicate the presence of specified elements or features, but do not exclude additional elements or features.

Claims

RC-IGBT (1), comprising: - an active region (1-2) with an IGBT region (1-21) and a diode region (1-22); - a semiconductor body (10) having a first side (110) and a second side (120); - a first load terminal (11) on the first side (110) and a second load terminal (12) on the second side (120); - multiple control trenches (14) and multiple source trenches (16), wherein the multiple trenches (14, 16) are arranged parallel to each other along a first lateral direction (X) and extending along a vertical direction (Z) into the semiconductor body (10), wherein the multiple source trenches (16) extend into both the IGBT region (1-21) and the diode region (1-22);- several IGBT measures (17) and several diode measures (18) in the semiconductor body (10), wherein the measures (17, 18) are laterally delimited along the first lateral direction (X) by two of the several trenches (14, 16), wherein: ◯ the IGBT measures (17) each comprise: ▪ a source region (101) of a first conductivity type electrically connected to the first load terminal (11), and ▪ a body region (102) of a second conductivity type electrically connected to the first load terminal (11) and isolating the source region (101) from another region (100) of the first conductivity type of the RC-IGBT (1); ◯ wherein the diode measures (18) each comprise: ▪ a first anode region (1061) of the second conductivity type electrically connected to the first load terminal (11). Conductivity type;- in the semiconductor body (10) and on the second side (120), both◯ a diode emitter region (104) of the first conductivity type, which forms part of the diode region (1-22) and has a lateral extent in the first lateral direction (X) that is at least 50% of the drift region thickness or at least 50% of the semiconductor body thickness (d); and◯ an IGBT emitter region (103) of the second conductivity type, which forms part of the IGBT region (1-21) and has a lateral extent in the first lateral direction (X) that is at least 70% of the drift region thickness or at least 70% of the semiconductor body thickness (d); and- in the diode region (1-22), a second anode region (1062) of the second conductivity type electrically connected to the first load terminal (11), wherein the second anode region (1062)◯ extends deeper along the vertical direction (Z) compared with the trenches (14, 16) in the diode region (1-22);and◯ overlaps with the diode emitter region (104) for at least 5% of the horizontal area of ​​the diode emitter region (104). RC-IGBT (1) according to claim 1, wherein the second anode region (1062) overlaps with the diode emitter region (104) for no more than 50% of the horizontal area of ​​the diode emitter region (104). RC-IGBT (1) according to claim 1 or 2, wherein the second anode region (1062) has two or more anode sub-regions (1062-1, 1062-2) spaced apart from each other along the first lateral direction (X) and / or along the second lateral direction (Y). RC-IGBT (1) according to claim 3, wherein the two or more anode sub-regions (1062-1, 1062-2) each have a strip configuration. RC-IGBT (1) according to claim 4, wherein the stripe configuration in question extends parallel to the diode measures (18) or perpendicular thereto. RC-IGBT (1) according to any one of the preceding claims 3 to 5, wherein the two or more anode sub-regions (1062-1, 1062-2) each have: - a first lateral extent which is at least one width of one of the diode masses (18) in the first lateral direction (X); and - a second lateral extent perpendicular thereto which is at least twice the first lateral extent. RC-IGBT (1) according to claim 6, wherein the anode sub-regions (1062-1, 1062-2) are arranged parallel to each other, and wherein a minimum distance between any two of the two or more anode sub-regions (1062-1, 1062-2) in a direction parallel to the relevant first lateral extension is at least the diode mesa width. RC-IGBT (1) according to one of the preceding claims, wherein the second anode region (1062) overlaps for at least 10% of a horizontal interface surface formed by the diode measures (18) in the diode region (1-22) with a section of the underlying semiconductor body (10). RC-IGBT (1) according to one of the preceding claims, further comprising, at least in some of the diode measures (18) in the diode region (1-22), a barrier region (105) of the first conductivity type below the first anode regions (1061), which has a dopant concentration at least 100 times higher compared with a dopant concentration of a drift region (100) of the RC-IGBT (1). RC-IGBT (1) according to claim 9, wherein the barrier regions (105) are arranged such that they do not overlap with the second anode region (1062). RC-IGBT (1) according to one of the preceding claims, wherein the average dopant concentration of the second anode region (1062) is in the range of 50% to 1000% of the average dopant concentration of the first anode regions (1061). RC-IGBT (1) according to one of the preceding claims, wherein the average dopant concentration of the first anode regions (1061) is lower compared to the average dopant concentration of the body regions (102). RC-IGBT (1) according to one of the preceding claims, wherein the diode region (1-22) does not have an IGBT mesa (17). RC-IGBT (1) according to one of the preceding claims, wherein the diode area (1-22) does not have a control groove (14). RC-IGBT (1) according to one of the preceding claims, wherein the control trenches (14) each have a control electrode (141) designed to control a load current in the IGBT mesa (17) arranged adjacent to the control trench (14). RC-IGBT (1) according to one of the preceding claims, wherein the source trenches (16) each have a source trench electrode (161) electrically connected to the first load terminal (11). RC-IGBT (1) according to one of the preceding claims, wherein the diode measures (18) are each free of an area of ​​the first conductivity type electrically connected to the first load terminal (11). RC-IGBT (1) according to one of the preceding claims, wherein the diode region (1-22) has a lateral extent along the first lateral direction (X) which is at least the thickness of the drift region (100) in the vertical direction (Z) or at least the thickness (d) of the semiconductor body in the vertical direction (Z), and / or wherein the diode region (1-22) has a lateral extent along the second lateral direction (Y) which is at least the drift region thickness or at least the semiconductor body thickness (d). A method for fabricating an RC-IGBT (1), comprising: - providing a semiconductor body (10) having a first side (110) and a second side (120); - forming an active region (1-2) with an IGBT region (1-21) and a diode region (1-22); - forming a first load terminal (11) on the first side (110) and a second load terminal (12) on the second side (120); - forming multiple control trenches (14) and multiple source trenches (16), wherein the multiple trenches (14, 16) are arranged parallel to each other along a first lateral direction (X) and extending along a vertical direction (Z) into the semiconductor body (10), wherein the multiple source trenches (16) extend into both the IGBT region (1-21) and the diode region (1-22);- Forming several IGBT measures (17) and several diode measures (18) in the semiconductor body (10), wherein the measures (17, 18) are laterally delimited along the first lateral direction (X) by two of the several trenches (14, 16), wherein: ◯ the IGBT measures (17) each comprise: ▪ a source region (101) of a first conductivity type electrically connected to the first load terminal (11), and ▪ a body region (102) of a second conductivity type electrically connected to the first load terminal (11) and isolating the source region (101) from another region (100) of the first conductivity type of the RC-IGBT (1); o the diode measures (18) each comprise: ▪ a first anode region (1061) of the second conductivity type electrically connected to the first load terminal (11). Conductivity type;- Forming, in the semiconductor body (10) and on the second side (120), both a diode emitter region (104) of the first conductivity type, which forms part of the diode region (1-22) and has a lateral extent in the first lateral direction (X) that is at least 50% of the drift region thickness or at least 50% of the semiconductor body thickness (d); and also an IGBT emitter region (103) of the second conductivity type, which forms part of the IGBT region (1-21) and has a lateral extent in the first lateral direction (X) that is at least 70% of the drift region thickness or at least 70% of the semiconductor body thickness (d); and- forming, in the diode region (1-22), a second anode region (1062) of the second conductivity type electrically connected to the first load terminal (11), wherein the second anode region (1062)◯ extends deeper along the vertical direction (Z) compared with the trenches (14, 16) in the diode region (1-22);and◯ overlaps with the diode emitter region (104) for at least 5% of the horizontal area of ​​the diode emitter region (104). Method according to claim 19, wherein forming the second anode region (1062) comprises performing an implantation processing step.

Images