SMART SWITCH WITH OVERCURRENT PROTECTION IN STANDBY MODE
An emergency overcurrent protection circuit in smart semiconductor switches addresses the power consumption and protection gap in idle mode by detecting and responding to fast transients, ensuring safe transitions and reducing power consumption.
DE102024100120B4Active Publication Date: 2026-07-02INFINEON TECHNOLOGIES AG
Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- INFINEON TECHNOLOGIES AG
- Filing Date
- 2024-01-03
- Publication Date
- 2026-07-02
AI Technical Summary
Technical Problem
Smart semiconductor switches face the challenge of power consumption during idle mode, where conventional overcurrent protection is unavailable, leading to potential device damage from rapid current transients during mode transitions.
Method used
An emergency overcurrent protection circuit with fast response times is integrated to detect and respond to fast current transients in idle mode, ensuring the power transistor is protected until conventional protection becomes active.
Benefits of technology
The additional overcurrent protection effectively safeguards the power transistor during mode transitions by distinguishing between normal and short-circuit conditions, reducing power consumption and preventing damage.
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Smart Images
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Abstract
Circuit (10) comprising: a power transistor (TL) connected between a supply terminal (VS) and an output terminal (OUT); a control circuit (11) coupled to a control electrode of the power transistor (TL) and configured to apply a control current (IG) to the control electrode to switch the power transistor (TL) on or off; and an overcurrent protection circuit (15) connected to the power transistor (TL), wherein the circuit (10) can be in a first mode in which some functions of the circuit (10) are inactive to reduce power consumption and in a second mode in which all functions of the circuit (10) are active; and wherein the overcurrent protection circuit (15) is configured: when the circuit (10) is in the first mode and a sense signal (ΔG) is received,VBE), which indicates a load current (IL) flowing through the power transistor (TL), has reached a first threshold, causing the circuit to switch from the first mode to the second mode, which requires a certain transition time, which begins when the sense signal (ΔVBE) reaches the first threshold, and when the sense signal (ΔVBE) has reached a second threshold, outputs a discharge signal (DIS) during the transition time, which leads to a reduction of the control current (IG) applied to the control electrode.
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Citation Information
Patent Citations
US20210083659A1