LED

Abstract

Light-emitting diode, including: a light emission setup (110) comprising a semiconductor layer (111) of a first conductivity type and a plurality of mesas (M), comprising a semiconductor layer (113) of a second conductivity type arranged on the semiconductor layer (111) of the first conductivity type, and an active layer (112) arranged between the semiconductor layer (111) of the first conductivity type and the semiconductor layer (113) of the second conductivity type, wherein the semiconductor layer (111) of the first conductivity type comprises an exposed region (R) between the plurality of mesas (M); a first electrode (150) which is arranged on the semiconductor layer (111) of the first conductivity type and is electrically connected to the semiconductor layer (111) of the first conductivity type; a current barrier layer (130) arranged on a section of the plurality of mesas (M) and a section of the exposed section (R); a transparent electrode layer (120) arranged on the plurality of mesas (M), wherein the transparent electrode layer (120) partially covers the semiconductor layer (113) of the second conductivity type and the current barrier layer (130); and a second electrode (140) which is arranged on the current barrier layer (130) and the transparent electrode layer (120) and is electrically connected to the semiconductor layer (113) of the second conductivity type, characterized by the fact that the current barrier layer (130) comprises at least one connecting section (131) extending from one of the mesas (M) to another mesa (M) adjacent to the one mesa (M), the current barrier layer (130) comprises a projecting section (132) that projects from the connecting section (131) and is arranged on the exposed area (R), and the first electrode (150) is in mechanical contact with the semiconductor layer (111) of the first conductivity type.

Description

TECHNICAL AREA

[0001] Exemplary embodiments of the present disclosure relate to a light-emitting diode and in particular a light-emitting diode which has good current distribution properties and improved mechanical reliability. BACKGROUND OF THE INVENTION

[0002] A light-emitting diode (LED) is a solid-state device that emits light by converting electrical energy. LEDs are broadly used in various light sources for backlighting, illumination, signal cards, large displays, and similar applications. With the expansion of LED markets for lighting and applications in high-current, high-output fields, there is a need to improve the characteristics of LEDs for stable operation under high-current driving. In particular, there is a need for LEDs that can suppress the fatigue phenomenon that causes a rapid drop in luminous efficacy (Im / W) when driven with high current.

[0003] US 2013 / 0234192A1 describes a light-emitting chip comprising a semiconductor layer of a first conductivity type, a plurality of mesas comprising a semiconductor layer of a second conductivity type and an active layer situated between the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, a first electrode electrically connected to the semiconductor layer of the first conductivity type, and a second electrode electrically connected to the semiconductor layer of the second conductivity type, wherein an electrode pad of the first electrode is arranged on an insulating layer surrounding the mesas.

[0004] Further examples of a light-emitting chip are disclosed in US 2014 / 0 124 730 A1, JP 2015 056 508 A and US 2013 / 0 240 923 A1. Disclosure technical problem

[0005] Exemplary embodiments of the present disclosure provide a light-emitting diode (LED) that can ensure reliable control at a stable high current. Furthermore, exemplary embodiments of the present disclosure provide a LED that exhibits improved current distribution characteristics and improved reliability. TECHNICAL SOLUTION

[0006] The present invention provides a light-emitting diode with the features of claim 1.

[0007] The semiconductor layer of the first conductivity type can comprise a side face adjacent to the connecting section, a second side face opposite the first side face, and third side faces arranged between the first side face and the second side face, intersecting each of the first side face and the second side face, and the protruding section can project towards the first side face or the second side face.

[0008] The plurality of mesas can comprise a plurality of second mesas and a first mesa arranged between the second mesas; the second electrode can comprise a second bonding pad arranged on the first mesa and adjacent to each other between the connection sections; the first electrode can comprise a first bonding pad arranged between the first mesa and the second side face; and the light-emitting diode can have a symmetrical arrangement with respect to an imaginary line intersecting the first bonding pad and the second bonding pad.

[0009] The second electrode can comprise at least one upper extension section extending from the second bonding pad, and the upper extension section can comprise a first upper extension section arranged on the at least one connecting section and adjacent to the second bonding pad, and a second upper extension section parallel to the third side surface.

[0010] The shortest distance between the first upper extension section and the first side surface can be smaller than the shortest distance between a central section of the second bonding pad and the first side surface.

[0011] The distance between a distal end of the second upper extension section and the first lateral surface can be greater than the distance between the distal end of the second upper extension section and the second lateral surface.

[0012] The second upper extension section may include a second section that is located on the second mesa and parallel to the third side face.

[0013] The second upper extension section may further comprise a first section located on the first mesa and between the first bonding pad and the second bonding pad, while adjoining the second bonding pad; and the second section may be of a greater length than the first section.

[0014] The second section can have a greater width than the first section.

[0015] The first electrode can include a lower extension section connected to the first bonding pad, and the distance between a distal end of the lower extension section and the second lateral surface can be greater than the distance between a distal end of the lower extension section and the first lateral surface.

[0016] The lower extension section may include a first lower extension section located on the exposed area.

[0017] The lower extension section may include a second lower extension section located between the first bonding pad and the second bonding pad.

[0018] A section of the second mesa is located between the first mesa and the first side face.

[0019] A distal end of the second section can be formed in the direction of an imaginary line that intersects the first bonding pad and the second bonding pad.

[0020] The mesas may further comprise a plurality of third mesas, each located between the second mesa and the third face; the first mesa may be located between the third mesas; and the second upper extension section may further comprise a third section located on each of the third mesas and parallel to the third face.

[0021] The third section can be longer than the second section. This design reduces the deviation of the shortest distances between the second upper extension section and the first bonding pad.

[0022] The third section can have a greater width than the second section.

[0023] A section of the second section can be located on the first mesa and an area of ​​the exposed region situated between the first mesa and each of the second mesas.

[0024] The foreground section may include a first foreground section; a distance between a distal end of the first foreground section and the second side face may be less than a distance between the first foreground section and the first side face; and each of the second sections may be arranged on the first foreground section.

[0025] The mesas can be the same size. ADVANTAGEOUS EFFECTS

[0026] In accordance with an exemplary embodiment of the present disclosure, the light-emitting diode comprises a plurality of mesas connected in parallel, thereby improving fatigue resistance and light uniformity during high-current operation. Furthermore, the current-discharge layer includes a projecting section, and the transparent electrode layer can be arranged on this projecting section, thus improving the reliability of the light-emitting diode. Additionally, openings in the current-discharge layer prevent defects such as bond pad detachment, further enhancing the reliability of the light-emitting diode. Moreover, the current distribution characteristics of the light-emitting diode can be improved by the shapes of the upper and lower extension sections. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The drawings show: Fig. 1 a view of a light-emitting diode in accordance with the embodiment of the present disclosure; Fig. 2 a cross-sectional view of the light-emitting diode in accordance with the exemplary embodiment of the present disclosure; Fig. 3 a cross-sectional view of the light-emitting diode in accordance with the exemplary embodiment of the present disclosure; Fig. 4 an enlarged view of part I1 of the light-emitting diode in accordance with the exemplary embodiment of the present disclosure; Fig. 5 an enlarged view of part I2 of the light-emitting diode in accordance with the exemplary embodiment of the present disclosure; Fig. 6 a view of a light-emitting diode in accordance with another exemplary embodiment of the present disclosure; Fig. 7 a view of a light-emitting diode in accordance with another exemplary embodiment of the present disclosure; Fig. 8 a view of a light-emitting diode in accordance with yet another exemplary embodiment of the present disclosure; Fig. 9 a view of a light-emitting diode in accordance with yet another exemplary embodiment of the present disclosure; Fig. 10 an enlarged view of part I3 of the light-emitting diode in accordance with yet another exemplary embodiment of the present disclosure; Fig. 11 a cross-sectional view of the light-emitting diode in accordance with another exemplary embodiment of the present disclosure; Fig. 12 a cross-sectional view of the light-emitting diode in accordance with yet another exemplary embodiment of the present disclosure; Fig. 13 a view of a light-emitting diode in accordance with another exemplary embodiment of the present disclosure; and Fig. 14 illustrations showing the properties of a light-emitting diode (example according to the invention) Fig. 6 compares with the properties of a typical light-emitting diode (comparative example). Preferred approach

[0028] Exemplary embodiments of the present disclosure are described in detail below with reference to the accompanying drawings. The following embodiments are intended merely as examples to fully communicate the basic concept of the present disclosure to persons skilled in the art in the technical field to which the present disclosure relates. Accordingly, the present disclosure is not limited to the embodiments disclosed herein and can be implemented in various configurations. In the drawings, widths, lengths, thicknesses, and the like of elements are exaggerated for clarity and descriptive purposes.When an element or layer is described as being "above" or "on top" of another element or layer, it may be directly "above" or "on" the other element or layer, or there may be intermediate elements or layers. Throughout the description, identical reference symbols denote identical elements that have the same or similar functions.

[0029] Fig. 1, Fig. 2, Fig. 3, Fig. 4 to Fig. Figure 5 shows top and cross-sectional views of a light-emitting diode in accordance with an exemplary embodiment of the present disclosure. Fig. 1 is a top view of the light-emitting diode, Fig. 2 is a cross-sectional view along the section line AA' of the Fig. 1, Fig. 3 is a cross-sectional view along the section line BB' of the Fig. 1, and Fig. Figure 4 is an enlarged view of part I1 of the in Fig. 1 light-emitting diode shown. Fig. 5 is an enlarged view of part I2 of the in Fig. 1 light-emitting diode shown.

[0030] Referring to Fig. 1, Fig. 2, Fig. 3, Fig. 4 to Fig. 5 comprises a light-emitting diode in accordance with the exemplary embodiment, a light emission structure 110, a transparent electrode layer 120, a current barrier layer 130, a first electrode 150 and a second electrode 140, and may further comprise a substrate 100 which is arranged on a lower surface of the light emission structure 110.

[0031] The substrate 100 can be selected from any substrates that allow a semiconductor layer 111 of a first conductivity type, an active layer 112, and a semiconductor layer 113 of a second conductivity type to be grown on it, and can be, for example, a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate, an aluminum nitride substrate, a silicon substrate, and the like. In this exemplary embodiment, the substrate 101 can be a patterned sapphire substrate (PSS).

[0032] The light emission assembly 110 comprises the semiconductor layer 111 of the first conductivity type, the semiconductor layer 113 of the second conductivity type, which is arranged on the semiconductor layer 111 of the first conductivity type, and the active layer 112, which is arranged between the semiconductor layer 111 of the first conductivity type and the semiconductor layer 113 of the second conductivity type. The semiconductor layer 111 of the first conductivity type, the active layer 112, and the semiconductor layer 113 of the second conductivity type can comprise a III-V-based composite semiconductor, for example, a nitride-based semiconductor such as (Al, Ga, In). The semiconductor layer 111 of the first conductivity type can comprise n-type dopants (for example, Si), and the semiconductor layer 113 of the second conductivity type can comprise p-type dopants (for example, Mg), or vice versa.The active layer 112 can comprise a multi-quantum well (MQW) structure and the composition ratio of the active layer can be determined such that light with a predetermined peak wavelength is emitted.

[0033] The semiconductor layer 111 of the first conductivity type comprises a first side surface 111a, a second side surface 111b facing the first side surface 111a, and third side surfaces 111c located between the first side surface 111a and the second side surface 111b, each intersecting the first side surface 111a and the second side surface 111b.

[0034] The light emission assembly 110 can comprise a plurality of mesas, each encompassing the semiconductor layer 113 of the second conductivity type and the active layer 112. The mesas (M) can be formed by partially removing the semiconductor layer 113 of the second conductivity type and the active layer 112. In particular, the mesas can be formed by structuring (patterning) the semiconductor layer 113 of the second conductivity type and the active layer 112 such that the semiconductor layer of the first conductivity type 111 is partially exposed. Each of the mesas can have an inclined side surface formed by a photoresist reflow process or the like. The plurality of mesas can comprise a first mesa M1 and a second mesa M2 adjacent to each other. The second mesa M2 can be provided multiple times, and the first mesa M1 can be arranged between the second mesas M2.Although the light-emitting diode is shown in accordance with this exemplary embodiment to have three mesas M1, M2, it should be noted that other implementations are also possible and the light-emitting diode can include four or more mesas.

[0035] An exposed region R is formed by exposing the semiconductor layer 111 of the first conductivity type during the formation of the plurality of mesas. The multiple mesas can be separated from each other on a single semiconductor layer 111 of the first conductivity type by the exposed region R. Additionally, the LED can use the exposed region R to provide an area where a material, such as an insulating layer, can be applied to protect the outer surface of the LED.

[0036] The exposed region R can comprise first exposed regions R1, which are exposed between the multitude of mesas, and a second exposed region R2, which is formed along an outer perimeter of the semiconductor layer 111 of the first conductivity type. For example, and as in Fig. As shown in Figure 1, the first exposed regions R1 can extend from the first side face 111a of the semiconductor layer 111 of the first conductivity type to the second side face 111b thereof. Furthermore, the first exposed regions R1 can be extended parallel to the third side face 111c. The second exposed region R2 can be formed along at least a portion of a side face of each of the mesas, so that it is positioned between the mesas and the side faces of the semiconductor layer 111 of the first conductivity type. The first exposed regions R1 can extend from the second exposed region R2.

[0037] The exposed area R can further comprise a convex section Q. For example, and as in Fig. As shown in Figure 1, the second exposed region R2 can include the convex section Q, which is arranged to point towards the first mesa M1. Additionally, the convex section Q can be located near the midpoint of the second face 111b and project towards the first face 111a.

[0038] The first electrode 150 is arranged on the semiconductor layer 111 of the first conductivity type and can be electrically connected to the semiconductor layer 111 of the first conductivity type. The first electrode 150 can comprise a first bonding pad 151 and a lower extension section 152 connected to the first bonding pad 151.

[0039] The first bonding pad 151 is located between the first mesa M1 and the second side surface 111b. Each of the first exposed regions R1 can be formed between the first mesa M1 and the second mesa M2, and the first bonding pad 151 can be located between these first exposed regions R1. The first bonding pad 151 can be located on the convex section Q where the semiconductor layer 111 of the first conductivity type is partially exposed. Electric current supplied to the light-emitting assembly 111 from an external power source of the LED via a second bonding pad 141 is discharged by the light-emitting assembly 111 via the first bonding pad 151.

[0040] The lower extension section 152 can be arranged along the side faces of the mesas. For example, a section of the lower extension section 152 can be arranged on the first exposed area R1, as shown in Fig. Figure 1 shows that the lower extension section 152 prevents current from accumulating near the first bonding pad 151, thereby improving the current distribution characteristics.

[0041] The distance between a distal end of the lower extension section 152 and the second side surface 111b can be greater than the distance between the distal end of the lower extension section 152 and the first side surface 111. Consequently, an electric current can easily be supplied to the mesa M located between the lower extension sections 152, for example to the first mesa M1, thereby improving the brightness intensity.

[0042] Furthermore, the distance between the distal end of the lower extension section 152 and the second bonding pad 141 can be smaller than the distance between the distal end of the lower extension section 142 and the first bonding pad 151. Since this setup can ensure a larger area of ​​the lower extension sections 152 to which electrical current supplied to the second bonding pad 141 can be applied, electrical current can be easily supplied to the mesas M around the second bonding pad 141 and the lower extension section 152, further improving the brightness intensity.

[0043] The current barrier layer 130 can be arranged on the light emission structure 110. In particular, and as shown in Fig. 1, Fig. 2, Fig. 3 to Fig. As shown in Figure 4, the current barrier layer 130 can be arranged on a section of the multiple mesas M and a section of the first exposed areas R1.

[0044] The barrier layer 130 can prevent current from accumulating as a result of direct application of electric current to the semiconductor layers when electric current is applied to the electrodes. Therefore, the barrier layer 130 can exhibit insulating properties, comprise an insulating material, and be formed from a single layer or multiple layers. For example, the barrier layer 130 can comprise SiOx or SiNx, or a distributed Bragg reflector in which insulating material layers with different refractive indices are stacked on top of each other. That is, the barrier layer 130 can exhibit either light transmission or light reflectivity.

[0045] The current barrier layer 130 can comprise a first current barrier layer 130a and a second current barrier layer 130b, which are arranged on the upper surface of the mesas. The first current barrier layer 130a can include an opening 130c that exposes the semiconductor layer 113 of the second conductivity type. The second current barrier layer 130b can be arranged within the opening 130c to be separated from the first current barrier layer 130a. The first current barrier layer 130a and the second current barrier layer 130b can be arranged between interconnect sections 131. The first current barrier layer 130a can also have a circular shape, but is not limited to this. The opening 130c can have an opening corresponding to an outer circumference of the first current barrier layer 130a. In the setup where the first current barrier layer 130a has a circular shape, the opening 130c can, for example, have a circular shape.The second current barrier layer 130b can have a shape corresponding to the shape of the opening 130c. For example, in the configuration where the opening 130c has a circular shape, the second current barrier layer 130b can also have a circular shape.

[0046] The current barrier layer 130 can comprise at least one connecting section 131 extending from one mesa M to another mesa M adjacent to the one mesa M among the plurality of mesas M. As in Fig. As shown in Figure 1, the connecting section 131 can be located near the first side face 111a, but is not limited to this location. The connecting section 111 can be located in a region extending from a section of the first mesa M1 and reaching a section of the second mesa M2 via the first exposed regions R1. The connecting section 131 prevents the second electrode 140 from electrically contacting the first-conductivity-type semiconductor layer 111 and insulates the transparent electrode layer 120 from the first-conductivity-type semiconductor layer 111. Referring to Fig. 1 and Fig. 4. The connecting section 131 can have a rectangular shape, without being restricted to that. Alternatively, the connecting section can have a circular shape.

[0047] The current barrier layer 130 can include a projecting section 132 that projects from the connecting section 131 to be located on the first exposed areas R1. For example, and as shown in Fig. 1, Fig. 2, Fig. 3 to Fig. As shown in Figure 4, the preceding section 132 can extend from a boundary between the first mesa M1 and the second exposed region R1 to a boundary between the second mesa M2 and the first exposed region R1. The preceding section 132 can project from the second electrode 140 in a direction parallel to the side faces of the first mesa M1 and the second mesa M2. In particular, the preceding section 132 can project towards both the first side face 111 and the second side face 111b. A section of the transparent electrode layer 120, described below, can be arranged on the preceding section 132. If the current barrier layer is not formed over a sufficient area on the first exposed region R1, then the area in which the transparent electrode layer 120 can be formed may be excessively narrow.In this case, the transparent electrode layer may exhibit negative reliability and may border the semiconductor layer of the first conductivity type, causing increased failure rates. In contrast, since the light-emitting diode, in accordance with the exemplary embodiment, includes the preceding section 132, it is possible to ensure a sufficient area in which the transparent electrode layer 120 will form on the first exposed area R1, thereby effectively isolating the transparent electrode layer 120 from the semiconductor layer 111 of the first conductivity type. Consequently, the light-emitting diode, in accordance with the exemplary embodiment, can reduce the defect rate while improving reliability.

[0048] Furthermore, the preceding section 132 can at least partially cover the first mesa M1 and the second mesas M2. In particular, the preceding section 132 can be arranged not only on these first exposed areas R1, but also on the side faces of the first mesa M1 and the second mesas M2. Furthermore, the preceding section 132 can also be arranged on an upper surface of the first mesa M1 and the upper surface of the second mesas M2.

[0049] The transparent electrode layer 120 can be arranged on a section of the multiple mesas M and a section of the first exposed areas R1. For example, and as shown in Fig. 1 and Fig. As shown in Figure 4, the transparent electrode layer 120 can partially cover the semiconductor layer 113 of the second conductivity type and the current barrier layer 130. A section of the transparent electrode layer 120 can be arranged on the current barrier layer 130. Therefore, the current barrier layer 130 can be arranged between the transparent electrode layer 120 and the semiconductor layer 113 of the second conductivity type, and between the transparent electrode layer 120 and the first exposed areas R1. The transparent electrode layer 120 can form an ohmic contact with the semiconductor layer 113 of the second conductivity type. The transparent electrode layer 120 can serve to distribute the electric current supplied by the second electrode 140 in the horizontal direction and has a high transmittance to allow the light emitted by the active layer 112 to pass through it.The transparent electrode layer 140 can comprise a material with a light transmittance and an electrical conductivity, for example at least one of a conductive oxide, such as ITO, ZnO and IZO, and of a light-transmitting metal, such as Ni / Au.

[0050] The transparent electrode layer 120 can comprise first regions 121 arranged on the plurality of mesas, and second regions 122 extending from the first regions 121. As in Fig. 3 and Fig. As shown in Figure 4, each of the second regions 122 connects the first regions 121, which are arranged on the mesas M, in such a way that electric current applied to the transparent electrode layer 120 on one mesa M by the second electrode 140 can be distributed to the transparent electrode layer 120 on another mesa adjacent to the first mesa M. This arrangement provides an efficient current distribution, thereby further improving the brightness uniformity of the LED.

[0051] One side face of the first region 121 can be parallel to the side face of the mesa M. A section of the transparent electrode layer 120, specifically a section of the first region, can be arranged on the preceding section 132. In this case, the transparent electrode layer 120 can be arranged closer to the side faces of the mesas to allow an electric current to be supplied to a region near the side faces of the mesas, thereby improving the light output.

[0052] The second regions 122 are arranged on the first exposed regions R1 and border the first regions 121. Consequently, a section of the current barrier layer 130, i.e., the interconnection section 131, is arranged between the second region 122 and the first exposed region R1, thus preventing an electrical connection between the second region 122 and the first conductivity-type semiconductor layer 111. A section of the interconnection section 131 located on the first exposed region R1 can have a larger area than a section of the second region 122 located on the first exposed region R1. Therefore, the second regions 122 can be effectively separated from the first conductivity-type semiconductor layer 111.

[0053] Sections of the transparent electrode layer 120, arranged on the plurality of mesas, can be interconnected. That is, the transparent electrode layer 21 can be arranged on each of the plurality of mesas instead of being divided into multiple regions. In particular, in the light-emitting diode, the transparent electrode layer 120 can be present as a monolithic layer instead of multiple layers. Since, in general, the transparent electrode layer is divided into multiple transparent electrode layers arranged on the mesas to be separate from each other, a current distribution region is also limited to each mesa by each of the transparent electrode layers.In contrast, in accordance with the exemplary embodiments, an electric current supplied to the transparent electrode layer 120 on the mesas via the second electrode 140 can be distributed over the total area of ​​the light-emitting diode via the monolithic transparent electrode layer 21.

[0054] The second electrode 140 can be arranged on the current barrier layer 130 to partially cover the transparent electrode layer 120. The second electrode 140 can be arranged on the semiconductor layer 113 of the second conductivity type to be electrically connected to it.

[0055] The second electrode 140 can comprise the second bonding pad 141 and at least one upper extension section 142. The second bonding pad 141 can be arranged on the first mesa M1 and can be positioned between the multiple connection sections 181 adjacent to one another. The second bonding pad 141 serves to transfer an electric current to the light-emitting assembly 110 when electric current is supplied to the LED from an external power source via wires (not shown). The second bonding pad 141 can have a shape corresponding to the shape of the first current-blocking layer 130a. For example, and as shown in Fig. 1 and Fig. As shown in Figure 5, the second bonding pad 141 can have a circular shape. In this exemplary embodiment, the area of ​​the second bonding pad 141 can be minimized, thus ensuring a bonding area for a solder while also ensuring a luminous area. Furthermore, since the second bonding pad 141 has a circular shape without an angled corner, current accumulation in the second bonding pad 141 can be reduced.

[0056] The second bonding pad 141 can be positioned on the first junction layer 130a and the second junction layer 130b. The second bonding pad 141 contacts the semiconductor layer 113 of the second conductivity type via the opening 130c. This creates a step between the first junction layer 130a and the second junction layer 130b, preventing defects such as detachment of the second bonding pad 141. Furthermore, the step forms a recessed section at a location on the upper surface of the second bonding pad 141 corresponding to the location of the opening 130c. A wire can be stably bonded to the second bonding pad 141 via this recessed section.

[0057] The light-emitting diode according to this exemplary embodiment can have a symmetrical structure with respect to an imaginary line (X-X') that intersects the first bonding pad 151 and the second bonding pad 141. With this structure, the light-emitting diode can provide the same current distribution pattern in several areas divided by the imaginary line.

[0058] The upper extension section 142 can extend from the second bonding pad 141. The upper extension section 142 can be formed only on a region of the LED to suppress current accumulation, thereby improving the brightness uniformity of the LED.

[0059] The upper extension section 142 can comprise a first upper extension section 142a adjacent to the second bonding pad 141 and arranged on at least one connecting section 30. As shown in Fig. As shown in Figure 1, the first upper extension section 142a can have a linear shape, without being restricted to it. The distance between the distal end of the lower extension section 152 and the first upper extension section 142a can be smaller than the distance between the distal end of the lower extension section 152 and the second side surface 111b. This configuration allows for efficient delivery of the electric current to the mesas between the distal end of the lower extension section 152 and the first upper extension section 142a.Furthermore, since the first exposed areas R1 are present, instead of the mesas, on the shortest path between the distal end of the lower extension section 152 and the first upper extension section 142a, an electric current can bypass the shortest path to distribute itself to the areas of the first mesa M1 and the second mesa M2 near the shortest path, instead of flowing along the shortest path. Consequently, the luminous intensity between the lower extension section 152 and a section of the first upper extension section 142a located on the mesas can be improved.

[0060] The upper extension section 142 can include second upper extension sections 142b. The second upper extension sections 142b can be parallel to the third side faces 111c. The second upper extension sections 142b can extend from the first upper extension sections 142a. The second upper extension sections 142b can extend toward one side of the semiconductor layer 111 of the first conductivity type near the first bonding pad 111. The distance between a distal end of each second upper extension section 142b and the first side face 111a can be greater than the distance between the distal end of each second upper extension section 142b and the second side face 111b. This configuration can suppress current buildup around the second bonding pad 141, thereby improving the luminance uniformity of the LED.

[0061] The second upper extension sections 142b can comprise a first section 142b1 and second sections 142b2. The first section 142b1 can be located on the first mesa M1 and adjacent to the second bonding pad 141. The first section 142b1 can be located between the first bonding pad 151 and the second bonding pad 141.

[0062] The second section 142b2 can be arranged on the second mesa M2 and parallel to the third side surface 111c. The second sections 142b2 can be longer than the first section 142b1. This configuration reduces the variation in the shortest distances between the second upper extension sections 142b and the first bonding pad 151. Consequently, the variation in the amount of electric current applied to the second upper extension sections 142b can be reduced to achieve a similar luminous intensity across the mesas on which the second upper extension sections 142b are arranged. As a result, the LED can exhibit improved luminous uniformity.

[0063] The width W2 of the second sections 142b2 can be greater than the width W1 of the first section 142b1. Typically, the amount of electric current supplied to the second upper extension section 142b through the second bonding pad 141 decreases with increasing distance between the second bonding pad 141 and the second upper extension section located on the mesa M. In this exemplary embodiment, since the second sections 142b2, which are located away from the second bonding pad 141, have a relatively large width W2, a larger amount of electric current can be supplied to the second sections 142b2 compared to the typical case mentioned above. Consequently, the luminous intensity of the mesa M located away from the second bonding pad 141 can be improved, thereby enhancing the uniformity of the LED's illumination.For example, the second sections 142b2 can have a width W2 of 6 µm and the first section 142b1 can have a width W1 of 5 µm.

[0064] Fig. Figure 6 is a top view of a light-emitting diode in accordance with another exemplary embodiment of the present disclosure. The light-emitting diode of the Fig. 6 is similar to the one referring to Fig. 1, Fig. 2, Fig. 3, Fig. 4 to Fig. 5 describes the light-emitting diode. In particular, the light-emitting diode of the Fig. 6 parts I1, I2, shown in enlarged views of the Fig. 4 are shown. The light-emitting diode differs from the Fig. 6 of the with reference to Fig. 1, Fig. 2, Fig. 3, Fig. 4 to Fig. The light-emitting diode described in section 5 with regard to the mesas and the upper extension section 140b, and the following description focuses on these different features.

[0065] In accordance with this exemplary embodiment, the light-emitting diode comprises a plurality of mesas, and the bonding pad 151 can be surrounded by the plurality of mesas M. In the light-emitting diode of the Fig. 1. The second exposed area R2 comprises the convex section Q, and the first bonding pad 151 is located on the convex section Q and is surrounded only by the first mesa M1. Consequently, the electric current supplied by the second bonding pad 141 is excessively concentrated on the first mesa M1 and is not sufficiently directed to the second mesas M2, which do not directly surround the first bonding pad 151. In the Fig. In contrast to the LED shown in Figure 6, since the convex section Q is located on the first exposed area R1, the first bonding pad 151 can be surrounded by the plurality of mesas, i.e., by the first mesa M1 and the second mesas M2. Consequently, electric current can be distributed more uniformly across the plurality of mesas M, thus improving the uniformity of the LED's illumination.

[0066] In the light-emitting diode according to this exemplary embodiment, one side surface of the first mesa M1 is arranged along the first side surface 111a, and the other side surface of the first mesa M1 is surrounded by the second mesa M2. In particular, a section of the second mesa M2 can be placed between the first mesa M1 and the second side surface 111b. The light-emitting diode thus comprises Fig. 1. A plurality of first exposed regions R1 interconnected, whereas the semiconductor layer 111 of the first conductivity type, in accordance with this exemplary embodiment, comprises a single first exposed region R1. The first bonding pad 151 is arranged in a region of the first exposed region R1 that is surrounded by the first mesa M1 and the second mesas M2.

[0067] The plurality of mesas M can be of the same size. Since the electric current generally collects around the first bonding pad 101, the mesa surrounding the first bonding pad 151 is larger than other mesas M that do not surround the first bonding pad 151. In this exemplary embodiment, the plurality of mesas M can be of the same size because they are arranged to surround the first bonding pad 151. Consequently, the mesas M can have the same luminous areas, thus improving the luminous uniformity of the LED.

[0068] In this exemplary embodiment, the first upper extension section 142a can have a curved shape. In particular, the first upper extension section 142a can have a curved shape that is convex towards the first side surface 111a. Specifically, the shortest distance between the first upper extension section 142a and the first side surface 111a can be smaller than the shortest distance between a central section of the second bonding pad 141 and the first side surface 111a. If the bonding pad 141 has a circular shape, the central section of the second bonding pad 141 is the center of the circle. Since the first upper extension section 142a can be placed near the area of ​​the mesas M adjacent to the first side surface 111a, an electric current can therefore be efficiently supplied to the area of ​​the mesas M, thereby improving the luminous intensity.

[0069] A distal end of each of the second sections 142b2 can be directed towards an imaginary line intersecting the first bonding pad 151 and the second bonding pad 141. In particular, the distal end of the second section 142b2 can be bent towards the first bonding pad 151. With this configuration, an electric current can be efficiently applied to an area of ​​each of the second mesas M2 between the first mesa M1 and the second side surface 111b, thereby enhancing the luminescence intensity of these areas.

[0070] The second electrode 140 can electrically connect the plurality of mesas M. In particular, the semiconductor layer 113 of the second conductivity type of each of the plurality of mesas M is electrically connected to the semiconductor layer 113 of the second conductivity type of the other mesas M via the second electrode 140, and the plurality of mesas M share the semiconductor layer 111 of the first conductivity type. Consequently, the multiple mesas M are connected in parallel to each other. With this configuration, the light-emitting diode can suppress the fatigue phenomenon during high-current driving and can exhibit a uniform luminous intensity through each of its regions.

[0071] The properties of the LED for high-current driving were investigated using the LED of the Fig. 6 as an example according to the invention and a typical light-emitting diode as a comparative example, in which the typical light-emitting diode has a similar structure to the light-emitting diode of the Fig. 1, except that the typical light-emitting diode has a single Mesa M instead of a multitude of Mesas, as measured.

[0072] In particular, the external quantum efficiency (EQE, 1 m / W) of the LED was measured while an electric current (mA) applied to each of the LEDs of the inventive example and the comparison example was increased. Based on the measurement results, the rate of decay in the external quantum efficiency at each current was expressed as a percentage of the highest external quantum efficiency. Consequently, the LED of the comparison example exhibits rates of decay in external quantum efficiency of -2.8% at 65 mA, -4.9% at 100 mA, and -18.2% at 400 mA. In contrast, the LED of the inventive example exhibits rates of decay in external quantum efficiency of -2.5% at 65 mA, -4.6% at 100 mA, and -17.6% at 400 mA, demonstrating that the LED of the inventive example has undergone a smaller decay in external quantum efficiency than the LED of the comparison example.Furthermore, based on these measurements, it could be seen that a difference in the decay rate of the external quantum efficiency between the light-emitting diodes of the inventive example and the comparison example gradually increases as the applied electric current increases, which means that the fatigue phenomenon (“droop” phenomenon) of the light-emitting diode of the inventive example was improved.

[0073] Fig. Figure 14 shows graphic representations and images illustrating an improvement in the luminous uniformity of the light-emitting diode of the inventive example. The images of Fig. Figure 14 shows the luminous intensity in each area of ​​the light-emitting diodes of the comparative example (a) and the example according to the invention (b) under a high current application (280 mA). Referring to Fig. Figure 14 shows the light-emitting diode of the inventive example, in which the several mesas M are connected in parallel, exhibiting a higher luminous intensity in a region (dotted area) along its outer circumference at a high current than the light-emitting diode of the comparative example. In particular, although both light-emitting diodes show a similar luminous intensity in their central section, the light-emitting diode of the inventive example exhibits improved luminous intensity at its outer circumference, thereby reducing the difference in luminous intensity between the central section of the light-emitting diode and its outer circumferential section. Consequently, the light-emitting diode of the inventive example exhibits uniform luminescence during high-current operation.

[0074] An improvement in the fatigue phenomenon and the uniformity of illumination as described above is not attributable to the light-emitting diode of the Fig. 6 limited and can also be obtained from light-emitting diodes in accordance with other exemplary embodiments in which the multiple mesas M are connected in parallel.

[0075] Fig. Figure 7 is a top view of a light-emitting diode in accordance with another exemplary embodiment of the present disclosure. The light-emitting diode of the Fig. 7 is similar to the light-emitting diode, which is referred to in relation to Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6 to Fig. 7 was described. For example, the light-emitting diode of the Fig. 7 the parts I1, I2, which are shown in an enlarged view of the Fig. 4 and Fig. 5 are shown, and the first mesa M1, the second mesas M2 and the exposed area R1 of the light-emitting diode of the Fig. 7 are similar to those of the light-emitting diode according to the preceding exemplary embodiment. However, the light-emitting diode differs from the Fig. 7 of the light-emitting diode, which refers to Fig. 1, Fig. 2, Fig. 3, Fig. 4 to Fig. 5 was described with regard to a third Mesa M3 and a third section 142b3, and thus the following description focuses on these different features.

[0076] The light-emitting diode according to this exemplary embodiment can further comprise a plurality of third mesas M3. Each of the third mesas M3 can be arranged between the second mesa M2 and the third side surface 111c. Furthermore, the first mesa M1 can be arranged between the multiple mesas M. The third mesas M3 can be the same size as the second mesa M2, without being limited to this size.

[0077] The second upper extension section 142b can further comprise third sections 142b3. Each of the third sections 142b3 can be arranged on the third mesa M3. The third sections 142b3 can be parallel to the third side face 111c. The third sections 142b3 can be longer than the second sections 142b2. This configuration reduces the variation in the shortest distances between the second upper extension sections 142b and the first bonding pad 151. Consequently, the variation in the amount of electric current applied to the second upper extension sections 142b can be reduced to achieve a similar luminous intensity on the areas of the mesa M on which the second upper extension sections 142b are arranged. As a result, the LED can exhibit improved luminous uniformity.

[0078] The width W3 of the third section 142b3 can be greater than the width W2 of the second section 142b2. Since the third sections 142b3 are located away from the second bonding pad 141 and have a relatively large width W3, a larger amount of electric current can be supplied to the third sections 142b3 compared to a typical LED. Consequently, the luminous intensity of the mesas M located away from the second bonding pad 141 can be improved, thereby enhancing the luminous uniformity of the LED.

[0079] Fig. Figure 8 is a top view of a light-emitting diode in accordance with another exemplary embodiment of the present disclosure. The light-emitting diode of the Fig. 8 is similar to those referring to Fig. 1, Fig. 2, Fig. 3, Fig. 4 to Fig. 5 and Fig. 7 described light-emitting diodes. For example, the light-emitting diode of the Fig. 8 the parts I1, I2, which are shown in enlarged view in Fig. 4 and Fig. Figure 5 shows that the third sections 142b3 of these can have a greater length than the second sections 142b2. Additionally, the width W3 of the third sections 142b3 can be greater than the width W2 of the second sections 142b2. However, the LED differs from the Fig. 7 of those referring to Fig. 1, Fig. 2, Fig. 3, Fig. 4 to Fig. 5 and Fig. The 7 described light-emitting diodes with regard to locations of the second upper extension section 142b and the lower extension section 152 and the following description focuses on these different features.

[0080] In the light-emitting diode according to this exemplary embodiment, a section of each of the second sections 142b2 can be arranged on the first mesa M1 and on a region of the first exposed area R1 located between the first mesa M1 and the second mesa M2. That is, a section of the first mesa M1, a section of the second mesa M2, and a section of the first exposed area R1 overlap each other along the length of the second section 142b2. In this configuration, when an electric current is applied to the second sections 142b2, the electric current can be transferred not only to the second mesa M2 but also to the first mesa M1. Additionally, the area of ​​the mesa M that is shielded by the second section 142b2 can be reduced, thereby improving the luminous efficacy by ensuring a sufficient luminous area.

[0081] The preceding section 132 may comprise a first preceding section 132a. The first preceding section 132a may overlap the second section 142b2 along the length of the second section 142b2. The distance between a distal end of the first preceding section 132a and the second side surface 111b may be less than the distance between the distal end of the first preceding section 132a and the first side surface 111a. Consequently, the first preceding section 132a may be extended toward the second side surface 111b. The second section 142b2 may be arranged on top of the first preceding section 132a. In particular, the entire area of ​​the second section 142b2 may be arranged only on top of the first preceding section 132a.

[0082] The lower extension section may comprise a first lower extension section 152a and a second lower extension section 152b.

[0083] The first lower extension section 152a can be arranged on the first exposed area R1. A distal end of the first lower extension section 152a can be arranged to point towards the first side surface 111a.

[0084] The second lower extension section 152b can be arranged between the first bonding pad 151 and the second bonding pad 141. A convex section Q can be extended towards the second bonding pad 141, and the second lower extension section 152b can be arranged on the convex section Q. With this configuration, the LED can prevent excessive current accumulation near the first bonding pad 151. Furthermore, sufficient electric current can be supplied to areas between the second section 142b2 and the second lower extension section 152b, which is arranged on the convex section Q, thereby improving the luminosity of these areas. The LED of the Fig. 8 does not include the first section 142b1. The light-emitting diode according to this exemplary embodiment can improve current distribution characteristics and luminous efficacy by means of the second lower extension section 152b of the first electrode 150 instead of the first section 142b1.

[0085] Fig. 9, Fig. 10, Fig. 11 to Fig. Figure 12 shows top and cross-sectional views of a light-emitting diode according to yet another exemplary embodiment of the present disclosure. Fig. 9 is a top view of the light-emitting diode, Fig. Figure 10 is an enlarged view of part I3 of the light-emitting diode of FIG. Fig. Figure 11 is a cross-sectional view along the section line DD' of the Fig. 9. Fig. Figure 12 is a cross-sectional view along line EE' of the Fig. 9.

[0086] The light-emitting diode of the Fig. 1 is generally similar to the light-emitting diode of the Fig. 9. In particular, the light-emitting diode of the Fig. 1 the same as the light-emitting diode of the Fig. 9 such that both LEDs comprise the connecting section 131 and the preceding section 132. However, in the LED of the Fig. 1. The second bonding pad 141 is arranged on the mesas M between several adjacent connection sections 131, whereas in this exemplary embodiment, the second bonding pad 141 is arranged on the connection section 131. Additionally, the connection section 131 comprises a plurality of openings 130d, 130e. The following description focuses on different features resulting from these structures.

[0087] The multitude of mesas M can include a first mesa M1 and a second mesa M2 that are adjacent to each other. For example, and as in Fig. 9 and Fig. As shown in Figure 10, the first mesa M1 and the second mesa M3 can have a symmetrical shape with respect to an imaginary line extending between the first mesa M1 and the second mesa M2, without being restricted to this shape. The light emission setup 110 can alternatively comprise three or more mesa M.

[0088] The connecting section 131 can include a first connecting section 131a, which is arranged on the first mesa M1 and the second mesa M2.

[0089] The second electrode 140 comprises the second bonding pad 141, which can be arranged on the first connection section 131a. The first connection section 131a can have a shape corresponding to an outer circumferential shape of the second bonding pad 141. For example, if the second bonding pad 141 has a circular shape, then the connection section 131a can also have a circular shape.

[0090] The connecting section 131 can include a first opening 130d, which exposes an upper surface of the first mesa M1, and a second opening 130e, which exposes an upper surface of the second mesa M2. As in Fig. 11 and Fig. As shown in Figure 12, the second bonding pad 141 can physically contact the semiconductor layer 113 of the second conductivity type through the first opening 130d and the second opening 130e. Each of the first opening 130d and the second opening 130e can include at least one concave section K1 or K2. With the concave section K1, the first opening 130d can have four steps along the outer circumference of the first opening 130d in one direction of the line EE', as shown in Figure 12. Fig. Figure 12 shows. On the other hand, in a setup where the first opening 130d and the second opening 130e do not include the concave section K1, the second bonding pad 141 can contact the semiconductor layer 113 of the second conductivity type in a region of the first opening 130d in the direction of line EE'. That is, the first opening 130d includes only two steps along its outer circumference in the direction of line E-E'. Consequently, in accordance with this exemplary embodiment, the LED has numerous steps under the second bonding pad 141, thus preventing defects such as detachment of the second bonding pad 141.

[0091] The first electrode 140 can comprise a first bonding pad 151 and a lower extension section 152. The first bonding pad 151 can be positioned between the first mesa M1 and the second mesa M2. The lower extension section 152 can be positioned on the first exposed area R1. Furthermore, the lower extension section 152 can be positioned between the first bonding pad 151 and the second bonding pad 141. This configuration can prevent excessive current accumulation in the first bonding pad 151 and allows efficient current delivery to the areas of the mesas M between the first bonding pad 151 and the upper extension section 142, thereby improving the luminescence intensity of these areas.

[0092] The first opening 130d and the second opening 130e can have a symmetrical configuration with respect to an imaginary line intersecting the first bonding pad 151 and the second bonding pad 141. Consequently, the second bonding pad 141 can maintain good reliability with respect to external forces applied in opposite directions. Furthermore, each of the concave sections K1 of the first opening 130d and the concave section of the second opening 130e can be parallel to the outer circumference of the first bonding section 131a. In a configuration where, for example, the first bonding section 131a has a circular shape, as in Fig. 9 and Fig. As shown in Figure 10, each of the concave sections K1, K2 of the first and second openings 130d, 130e can have a circular shape along the circular shape of the first and second openings. In general, when a wire is bonded to the second bonding pad 141 via a solder, a central section of the upper surface of the solder contacting the wire is convex in a circular shape as a result of the bond strength between the wire and the solder, and a central section of an upper surface of the solder contacting the second bonding pad 141 is concave in a circular shape.In the configuration where each of the concave sections K1, K2 of the first and second openings 130d, 130e has a curved shape along the circular shape of the first or second opening, a section of the upper surface of the second bonding pad 141 can have a substantially circular shape corresponding to the area of ​​the first connection section 131a between the concave section K1 of the first opening 130d and the concave section K2 of the second opening 130e. Since the morphology of the lower surface of the solder becomes similar to the morphology of the upper surface of the second bonding pad 141, the bond strength between the wire and the second bonding pad 141 can be strong, thus improving the reliability of the LED.

[0093] Furthermore, each of the first opening 130d and the second opening 130e can comprise at least one convex section V1 or V2, which may be parallel to the outer circumference of the connection section 131. Accordingly, the second bonding pad 141 can comprise a depressed section formed on its upper surface, having a substantially circular shape. With this configuration, the second bonding pad enables a uniform distribution of the wire towards a wire bond, thereby preventing solder leakage from the connection section 131.

[0094] A section of the transparent electrode layer 120, which is arranged on the first exposed area R1, can have a larger area than a section of the second electrode 140, which is arranged on the first exposed area R1. In particular, a section of the second area 122, which is arranged on the first exposed area R1, can have a larger area than a section of the second bonding pad 141, which is arranged on the first exposed area R1. The second area 122 comprises side surfaces (a) arranged on the first exposed area R1, and the second bonding pad 141 comprises side surfaces (b) arranged on the first exposed area R1, in which the side surfaces (b) of the second bonding pad 141 are arranged between the side surfaces (a) of the second area 122.In particular, the portion of the second region 122, which is located on the first exposed region R1, does not cover the side faces (a) of the transparent electrode layer 120. In an assembly where the second bonding pad 141 covers the side faces (a) of the second region 122 on the first exposed region R1, a portion of a corner of the upper surface of the second bonding pad 141 does not overlap the transparent electrode layer 120 in the vertical direction, thus providing a depressed section. In this assembly, the solder can flow along the depressed section to the semiconductor layer 111 of the first conductivity type for wire bonding. In contrast, in the assembly according to this exemplary embodiment, the depressed section is not formed at the corner of the second bonding pad 141, thereby improving the reliability of the LED.

[0095] To achieve the structure according to this exemplary embodiment, the second bonding pad 141 is advantageously arranged on the first connection section 131a, and the second area 122 is arranged on the preceding section 132. Such a structure also offers advantages with regard to the first opening 130d and the second opening 130e. In particular, in a structure where the current barrier layer 130 does not include the preceding section 132, the area of ​​the second bonding pad 141 must be reduced to prevent it from covering the side surfaces (a) of the second area 122 on the first exposed area R1. At the same time, a minimum size of each of the first opening 130d and the second opening 130e must be maintained to ensure the physical reliability of the second bonding pad 141.In this case, the second bonding pad 141 does not sufficiently fill the first opening 130d or the second opening 130e, causing detachment of the second bonding pad 141 and thus impairing the physical reliability of the LED. Therefore, the current barrier layer 130 includes the preceding section 132, and the second area 122 is arranged on the preceding section 132 to prevent such a problem.

[0096] The light-emitting diode of the Fig. 9 may under certain circumstances not include the first section 142b1, which is located between the first bonding pad 151 and the second bonding pad 141. Unlike the light-emitting diode of the Fig. 1, in which the second bonding pad 141 is arranged only on a first Mesa M1, is the second bonding pad 141 of the light-emitting diode that is in Fig. As shown in Figure 9, the LED is arranged on the first mesa M1, the second mesa M2, and the first exposed region R1 between the first mesa M1 and the second mesa M2. Therefore, the LED can maintain current distribution effects and an improvement in luminous intensity through the upper extension section 152 instead of the first section 142b1.

[0097] Fig. Figure 13 is a top view of a light-emitting diode in accordance with another exemplary embodiment of the present disclosure. The light-emitting diode of the Fig. 13 is similar to the light-emitting diode, which is referred to in relation to Fig. 9, Fig. 10, Fig. 11 to Fig. 12 was described. The light-emitting diode of the Fig. 13 also includes part I3, which is shown in an enlarged view in Fig. 10 is shown. However, the light-emitting diode differs from the Fig. 13 of the with reference to Fig. 9, Fig. 10, Fig. 11 to Fig. 12 described light-emitting diode with regard to the mesas M and the upper extension section 140b.

[0098] In particular, the light-emitting diode of Fig. 13 a multitude of Mesas M such as the light-emitting diode of the Fig. 9 include the light-emitting diode of the Fig. 13 can further comprise a plurality of third mesas M3 and a plurality of fourth mesas M4. The plurality of third mesas M3 can be arranged adjacent to the first mesa M1 or the second mesa M2, such that the first mesa M1 and the second mesa M2 are arranged between the plurality of third mesas M3. Furthermore, the plurality of fourth mesas M4 can be arranged adjacent to the third mesas M3 such that the third mesas M3 are arranged between the fourth mesas M4. Accordingly, the light-emitting diode of Fig. 13 a larger number of connecting sections 131 than the light-emitting diode of the Fig.9 and may further comprise third sections 142b3 arranged on the third mesas M3 and fourth sections 142b4 arranged on the fourth mesas M4.

Claims

[1] Light-emitting diode, comprising: a light emission setup (110) comprising a semiconductor layer (111) of a first conductivity type and a plurality of mesas (M), comprising a semiconductor layer (113) of a second conductivity type arranged on the semiconductor layer (111) of the first conductivity type, and an active layer (112) arranged between the semiconductor layer (111) of the first conductivity type and the semiconductor layer (113) of the second conductivity type, wherein the semiconductor layer (111) of the first conductivity type comprises an exposed region (R) between the plurality of mesas (M); a first electrode (150) which is arranged on the semiconductor layer (111) of the first conductivity type and is electrically connected to the semiconductor layer (111) of the first conductivity type; a current barrier layer (130) arranged on a section of the plurality of mesas (M) and a section of the exposed section (R); a transparent electrode layer (120) arranged on the plurality of mesas (M), wherein the transparent electrode layer (120) partially covers the semiconductor layer (113) of the second conductivity type and the current barrier layer (130); and a second electrode (140) which is arranged on the current barrier layer (130) and the transparent electrode layer (120) and is electrically connected to the semiconductor layer (113) of the second conductivity type, characterized by , that the current barrier layer (130) comprises at least one connecting section (131) extending from one of the mesas (M) to another mesa (M) adjacent to the one mesa (M), the current barrier layer (130) comprises a projecting section (132) that projects from the connecting section (131) and is arranged on the exposed area (R), and the first electrode (150) is in mechanical contact with the semiconductor layer (111) of the first conductivity type. [2] Light-emitting diode according to claim 1, wherein the semiconductor layer (111) comprises the first conductivity type: a side surface (111a) adjacent to the connecting section (131); a second side surface (111b) opposite the first side surface (111a); and third side surfaces (111c) arranged between the first side surface (111a) and the second side surface (111b), each intersecting the first side surface (111a) and the second side surface (111b), and the preceding section (132) projects towards the first side face (111a) or the second side face (111b). [3] Light-emitting diode according to claim 2, wherein the plurality of mesas (M) comprises a plurality of second mesas (M29) and a first mesa (M1) arranged between the second mesas (M2); the second electrode (140) comprises a second bonding pad (141) which is arranged on the first mesa (M1) and adjacent to each other between the connecting sections (131); the first electrode (150) comprises a first bonding pad (151) arranged between the first mesa (M1) and the second side surface (111b); and the light-emitting diode has a symmetrical structure with respect to an imaginary line (XX') intersecting the first bonding pad (151) and the second bonding pad (141). [4] Light-emitting diode according to claim 3, wherein the second electrode (140) has at least one upper extension section (142) extending from the second bonding pad (141), and the upper extension section (142) comprises a first upper extension section (142a) arranged on the at least one connecting section (131) and adjacent to the second bonding pad (141), and a second upper extension section (142b) parallel to the third side surface (111c). [5] Light-emitting diode according to claim 4, wherein the shortest distance between the first upper extension section (142a) and the first side surface (111a) is smaller than the shortest distance between a central section of the second bonding pad (141) and the first side surface (111a). [6] Light-emitting diode according to claim 4, wherein a distance between a distal end of the second upper extension section (142b) and the first side surface (111a) is greater than a distance between the distal end of the second upper extension section (142b) and the second side surface (111b). [7] Light-emitting diode according to claim 6, wherein the second upper extension section (142) comprises a second section (142b2) which is arranged on the second mesa (M2) and parallel to the third side surface (111c). [8] Light-emitting diode according to claim 7, wherein the second upper extension section (142b) further comprises a first section (142b1) which is arranged on the first mesa (M1) and between the first bonding pad (151) and the second bonding pad (141), while adjoining the second bonding pad (141), and the second section (142b2) has a greater length than the first section (142b1). [9] Light-emitting diode according to claim 8, wherein the second section (142b2) has a greater width (W2) than the first section (142b1). [10] Light-emitting diode according to claim 4, wherein the first electrode (151) comprises a lower extension section (152) which is connected to the first bonding pad (151) and a distance between a distal end of the lower extension section (152) and the second side surface (111b) is greater than a distance between the distal end of the lower extension section (152) and the first side surface (111a). [11] Light-emitting diode according to claim 10, wherein the lower extension section (152) comprises a first lower extension section (152a) which is arranged on the exposed area (R). [12] Light-emitting diode according to claim 11, wherein the lower extension section (152) comprises a second lower extension section (152b) arranged between the first bonding pad (151) and the second bonding pad (141). [13] Light-emitting diode according to claim 3, wherein a section of the second mesa (M2) is arranged between the first mesa (M1) and the first side surface (111a). [14] Light-emitting diode according to claim 8, wherein a distal end of the second section is directed towards an imaginary line (XX') intersecting the first bonding pad (151) and the second bonding pad (141). [15] Light-emitting diode according to claim 7, wherein the mesas (M) further comprise a plurality of third mesas (M3) arranged between the second mesa (M2) and the third side surface (111c); the first mesa (M1) is arranged between the third mesas (M3); and the second upper extension section (142b) further comprises a third section (142b3) which is arranged on each of the third mesas (M3) and parallel to the third side surface (111c). [16] Light-emitting diode according to claim 15, wherein the third section (142b3) has a greater length than the second section (142b2). [17] Light-emitting diode according to claim 16, wherein the third section (142b3) has a greater width than the second section (142b2). [18] Light-emitting diode according to claim 15, wherein a section of the second section (142b2) is arranged on the first mesa (M1) and a region of the exposed area (R) is arranged between the first mesa (M1) and each of the second mesas (M2). [19] Light-emitting diode according to claim 17, wherein the preceding section (132) comprises a first preceding section (132a); a distance between a distal end of the first projecting section (132a) and the second side surface (111b) is greater than a distance between the first projecting section (132a) and the first side surface (111a); and Each of the second sections (142b2) is arranged on the first preceding section (132a). [20] Light-emitting diode according to claim 1, wherein the mesas (M) are of the same size.

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