Semiconductor component and method for manufacturing the semiconductor component
Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- MITSUBISHI ELECTRIC CORP
- Filing Date
- 2017-11-16
- Publication Date
- 2026-07-09
AI Technical Summary
Existing semiconductor devices face challenges in productivity due to the need for custom molding tools and increased complexity when adjusting radiator fins based on heat generation, leading to reduced efficiency and increased production time.
The semiconductor device is designed with a power module unit and a fin base as separate bodies, allowing for the use of a uniform module base that can be shared across different heat densities, and the radiator fins are tailored to the heat density of the power module unit, enabling separate manufacturing and assembly with a common mold.
This approach improves productivity by allowing the use of a common mold for different heat densities, reduces production time, and enhances the flexibility in modifying radiator fin placement, thus increasing efficiency and reducing the complexity of the manufacturing process.
Abstract
Description
TECHNICAL AREA
[0001] The present invention relates to a semiconductor device and a method for its manufacture, in particular to a semiconductor device equipped with a power semiconductor element and a method for manufacturing the semiconductor device. STATE OF THE ART
[0002] As an example of a semiconductor device as a power module equipped with a power semiconductor element, there is a semiconductor device that is assembled with a heat sink having radiator fins to efficiently dissipate the heat generated by the power semiconductor element. Such a semiconductor device is described, for example, in patent documents 1 to 3.
[0003] This type of semiconductor device has a base plate with one side featuring a power semiconductor element, which is sealed with a resin. The other side of the base plate is equipped with numerous radiator fins to dissipate the heat generated by the power semiconductor element. STATE OF THE ART Patent document 1: Japanese patent application disclosure JP 5 236 127 A Patent document 2: Japanese patent application disclosure JP 2012-49 167 A Patent document 3: WO 2011 / 061779 BRIEF DESCRIPTION OF THE INVENTION Problems to be solved with the invention
[0004] In a semiconductor device, a power semiconductor element tailored to the intended use is mounted on a base plate. For example, if the power semiconductor element mounted on the semiconductor device generates a relatively large amount of heat, large radiator fins are attached to the base plate to dissipate the heat efficiently. The number of radiator fins mounted on the base plate is also increased.
[0005] Therefore, the base plate containing the power semiconductor element must be equipped with radiator fins that are matched to the degree of heat generation (e.g., in size and number). A semiconductor component is manufactured as a power module specifically designed for the base plate.
[0006] One objective of the present invention, which arose during the development of this type of semiconductor device, is to provide a semiconductor device with improved productivity. A further objective is to provide a method for manufacturing such a semiconductor device. Means of solving the problems
[0007] A semiconductor device according to the present invention is a semiconductor device comprising a power module unit, a fin base, and a radiator fin. The power module unit has a module base, a power semiconductor element, and a casting resin. The power semiconductor element is mounted on the module base. The casting resin seals the power semiconductor element. The fin base has a heat radiation distribution area and a base area. The heat radiation distribution area is equipped with the radiator fin. The base area is formed on the heat radiation distribution area, with the module base being connected to the base area.
[0008] A method for manufacturing a semiconductor device according to the present invention comprises the following steps. A power module unit is formed by mounting a power semiconductor element on a module base and sealing the power semiconductor element with a casting resin, exposing a region of the module base, the region of the module base being located on a side opposite the power semiconductor element. A finned base is created, the finned base comprising: a heat radiation distribution region with a caulking area and a cooling fin insertion slot; and a base region formed on a region of the heat radiation distribution region, the region of the heat radiation distribution region being located on a side opposite the caulking area and the cooling fin insertion slot.The power module unit and the fin base are positioned so that the exposed area of the module base faces the base area of the fin base, and each of the multiple radiator fins is inserted into the corresponding fin slot. The exposed area of the module base and the base area of the fin base are joined together, and the caulking area is pressed onto the multiple radiator fins on the heat radiation distribution area by pressing the power module unit towards the fin base, while a caulking device is in contact with the caulking area, thus joining the power module unit, the fin base, and the multiple radiator fins together. Effect of the invention
[0009] In the semiconductor device according to the present invention, the power module unit, which is provided with the power semiconductor element, and the fin base, which is equipped with the radiator fins, are prepared as separate bodies. This improves the productivity of the semiconductor device.
[0010] According to the method for manufacturing a semiconductor device according to the present invention, the power module unit with the power semiconductor element and the fin base with the radiator fins are manufactured individually. This enables the shared use of the module base and thus contributes to increasing the productivity of the semiconductor device. List of characters Fig. Figure 1 is an exploded side view showing a partial cross-section of a semiconductor device in embodiment 1; Fig. 2 is a top view of a power module unit in which in Fig. 1 Semiconductor component shown in the above-mentioned embodiment; Fig. 3 is a bottom view of the power module unit in the semiconductor device according to Fig. 1 in the embodiment mentioned above; Fig. Figure 4 is a first cross-sectional view to illustrate the power module unit in the embodiment mentioned above; Fig. Figure 5 is a second cross-sectional view to illustrate the power module unit in the embodiment described above; Fig. Figure 6 is a first cross-sectional view to explain a module base in the embodiment mentioned above; Fig. Figure 7 is a second cross-sectional view to illustrate the module base in the embodiment described above; Fig. Figure 8 is a cross-sectional view to explain a module basis in a first comparative example; Fig. Figure 9 is a cross-sectional view to explain a module basis in a second comparative example; Fig. Figure 10 is a top view of a rib base in the semiconductor device according to Fig. 1 in the embodiment mentioned above; Fig. Figure 11 is a side view with a partial cross-section showing a state before assembly to explain a semiconductor device in a third comparative example; Fig. Figure 12 is a side view with a partial cross-section showing a state after assembly to explain the semiconductor device in the third comparative example; Fig. Figure 13 is a side view with a partial cross-section showing a state prior to assembly, to explain the semiconductor device in the embodiment described above; Fig. Figure 14 is a side view with a partial cross-section showing a state after assembly, to explain the semiconductor device in the embodiment described above; Fig. 15 is a bottom view of the rib base in the semiconductor device according to Fig. 1 in the embodiment mentioned above; Fig. Figure 16 is a side view with a partial cross-section showing a process in a method for manufacturing a semiconductor device in the embodiment described above. Fig. Figure 17 is a side view with a partial cross-section showing a process that follows the description in Fig. 16 the process described in the above embodiment is to be carried out; Fig. Figure 18 is a side view with a partial cross-section showing a process that follows the description in Fig. 17 the process described in the above embodiment is to be carried out; Fig. Figure 19 is a side view with a partial cross-section, which in the third comparative example shows a process in a method for manufacturing a semiconductor device; Fig. 20 is a side view with a partial cross-section showing a process that follows the one described in Fig. The process described in 19 is to be carried out; Fig. 21 is a side view with a partial cross-section showing a process that follows the one described in Fig. to carry out the process shown in 20; Fig. Figure 22 is a first side view with a partial cross-section to explain the problems of the semiconductor device in the third comparative example; Fig. Figure 23 is a second side view with a partial cross-section to explain the problems of the semiconductor device in the third comparative example; Fig. Figure 24 is a first side view with a partial cross-section to illustrate the advantages of the semiconductor device in the embodiment mentioned above; Fig. Figure 25 is a second side view with a partial cross-section to illustrate the advantages of the semiconductor device in the embodiment mentioned above; Fig. Figure 26 is a side view showing a partial cross-section of a semiconductor device in a fourth comparative example; Fig. 27 is a diagram to illustrate the advantages of the in Fig. 1 Semiconductor component shown in the embodiment mentioned above; Fig. Figure 28 is a side view with a partial cross-section showing an example of a state in which the semiconductor device is attached to a mounting chassis in the embodiment described above; Fig. Figure 29 is a first side view with a partial cross-section to explain a heat radiation distribution area in the semiconductor device in the embodiment mentioned above; Fig. Figure 30 is a second side view with a partial cross-section to illustrate the heat radiation distribution area in the semiconductor device in the embodiment mentioned above; Fig. Figure 31 is a top view of a rib base in a semiconductor device in a first modification of the above-mentioned embodiment; Fig. Figure 32 is a bottom view of the rib base in the semiconductor device in the first modification of the above-mentioned embodiment; Fig. Figure 33 is a top view of a power module unit in a semiconductor device in a second modification of the above-mentioned embodiment; Fig. Figure 34 is a bottom view of the power module unit in the semiconductor device in the second modification of the above-mentioned embodiment; Fig. Figure 35 is a top view of a rib base in the semiconductor device in the second modification of the above-mentioned embodiment; Fig. Figure 36 is a bottom view of the rib base in the semiconductor device in the second modification of the above-mentioned embodiment; Fig. Figure 37 is an exploded side view showing a partial cross-section of a semiconductor device in a third modification of the above-mentioned embodiment; Fig. Figure 38 is a side view with a partial cross-section showing a process in a method for manufacturing a semiconductor device in a third modification of the embodiment mentioned above. Fig. Figure 39 is an exploded side view showing a partial cross-section of a semiconductor device in a fourth modification of the embodiment mentioned above; Fig. Figure 40 is an exploded side view showing a partial cross-section of a semiconductor device in a fifth modification of the embodiment mentioned above; Fig. Figure 41 is an exploded side view showing a partial cross-section of a semiconductor device in a sixth modification of the above-mentioned embodiment; Fig. Figure 42 is a top view of a rib base in the semiconductor device in the sixth modification of the above-mentioned embodiment; Fig. Figure 43 is a bottom view of the rib base in the semiconductor device in the sixth modification of the above-mentioned embodiment; Fig. Figure 44 is an exploded side view showing a partial cross-section of a semiconductor device in a seventh modification of the above-mentioned embodiment; Fig. Figure 45 is a diagram illustrating the relationship between the material for the rib base and radiator ribs and the tensile strength in the embodiment described above; Fig. Figure 46 is an exploded side view showing a partial cross-section of a semiconductor device according to embodiment 2; Fig. Figure 47 is a side view with a partial cross-section showing a process in a method for manufacturing a semiconductor device in the embodiment described above. Fig. 48 is a side view with a partial cross-section showing a process that follows the one described in Fig. 47 the process described in the above embodiment is to be carried out; Fig. 49 is a side view with a partial cross-section showing a process that follows the one described in Fig. 48 the process described in the above embodiment is to be carried out; Fig. Figure 50 is an exploded side view with a partial cross-section to explain the problems of a semiconductor device in a fifth comparative example; Fig. Figure 51 is a side view with a partial cross-section showing a process in a method for manufacturing a semiconductor device, in order to explain the problems of the semiconductor device in the fifth comparative example; Fig. 52 is a side view with a partial cross-section showing a process that follows the one described in Fig. The process shown in section 51 is to be carried out in order to explain the problems of the semiconductor device in the fifth comparative example; Fig. Figure 53 is a partial side view with a partial cross-section to explain the problems of the semiconductor device in the fifth comparative example; Fig. Figure 54 is an exploded side view showing a partial cross-section of a semiconductor device in a first modification of the embodiment mentioned above; Fig. 55 is a top view of a rib base in the semiconductor device according to Fig. 54 in the embodiment mentioned above; Fig. 56 is a bottom view of the rib base in the semiconductor device according to Fig. 54 in the embodiment mentioned above; Fig. Figure 57 is a side view with a partial cross-section showing a process in a method for manufacturing a semiconductor device in the first modification of the embodiment mentioned above. Fig. Figure 58 is a top view of a rib base in a semiconductor device in a second modification of the above-mentioned embodiment; Fig. Figure 59 is a bottom view of the rib base in the semiconductor device in the second modification of the above-mentioned embodiment; Fig. Figure 60 is a side view with a partial cross-section showing a process in a method for manufacturing a semiconductor device in the second modification of the embodiment mentioned above. Fig. Figure 61 is a top view showing a rib base in a semiconductor device in a third modification of the embodiment mentioned above. Fig. Figure 62 is a side view with a partial cross-section to explain a semiconductor device in a fourth modification of the above-mentioned embodiment; Fig. Figure 63 is a side view with a partial cross-section showing a process in a method for manufacturing a semiconductor device in the fourth modification of the embodiment mentioned above. Fig. 64 is a side view with a partial cross-section showing a process that follows the process in Fig. 63 in the above-mentioned embodiment, Fig. Figure 65 is a side view with a partial cross-section showing a process that follows the description in Fig. 64 in the above-mentioned embodiment to be carried out the process shown; Fig. 66 is a side view with a partial cross-section showing a process that follows the process in Fig. 65 according to the above-mentioned embodiment, Fig. Figure 67 is an exploded side view showing a partial cross-section of a semiconductor device according to embodiment 3 and Fig. Figure 68 is an exploded side view showing a partial cross-section of a semiconductor device in a modification of the embodiment mentioned above. DESCRIPTION OF EXECUTION FORMS Execution form 1
[0011] A semiconductor device in embodiment 1 will now be described. Fig. Figure 1 shows an exploded side view with a partial cross-section of the semiconductor device. As in Fig. As shown in 1, the semiconductor component 1 a power module unit 11 , a rib base 51 and a multitude of radiator fins 81 .
[0012] The power module unit 11 and the rib base 51 are connected and joined together, with one on the power module unit 11 formed forward / backward area 15 into one on the rib base 51 formed forward / backward area 55 is inserted.
[0013] In the power module unit 11 is a chip 27 with a power semiconductor element on a surface of the module base 13 Assembled. On one side of the module base 13 is a ladder frame 23 arranged with an insulating layer in between 21 is arranged. The chip 27 is measured via a plumb line 25 with the ladder frame 23 tied together.
[0014] Furthermore, as in Fig. 2 and Fig. 3 shown, the chip 27 etc. with a casting resin 29 sealed. A section of the ladder frame 23 protrudes from the side surfaces of the casting resin 29 as an external connection. The other surface of the module base 13 is exposed. On the exposed surface of the module base 13 is a forward / backward area 15 trained. Cutouts 15a of the forward / backward area 15extend, for example, along the Y -Axis direction. The forward / receding area 15 refers to the shape of the entire surface of the module base 13 including the cutouts 15a .
[0015] The one on the surface of the module base 13 The resulting forward / receding area is described below. Fig. 4 shows the module base 13 with the forward / backward area 15 including cutouts 15a . Between each pair of recesses 15a A flat area is formed. Fig. 5 shows the module base 13 , which have a forward / reverse area 17 including protrusions 17a exhibits. At the top of each lead 17a A flat area is formed.
[0016] Productivity is increased both in the modular base 13 with the forward / backward area 15 as well as in the module base13 with the forward / backward area 17 Improved. However, productivity is improved more effectively when the modular base 13 a forward / backward area 15 has, as if the module base 13 a forward / backward area 17 The explanation for this fact is given below.
[0017] To temporarily bond the insulating layer to the module base, the module base must be heated to a specific temperature as a preparatory step. Similarly, to seal the chip, the conductor frame, etc., with the casting resin, the module base must be heated to a specific temperature as a preparatory step.
[0018] If the module base 13 a forward / backward area 15 has, comes the area of the module base 13 except for the cutouts 15a with a heating block 98 in contact, as in Fig. 6 shown. On the other hand, if the module basis 13 the forward / reverse area 17 has, the advantages come 17a based on modules 13 with the heating block 98 in contact, as in Fig. 7 shown.
[0019] If you look at the contact surfaces between the module base 13 and heating block 98 Comparing, the contact surface of the module base is 13 with the forward / backward area 15 larger than that of the module base 13 with the forward / backward area 17 That is, the area between two recesses 15a formed flat area 15f is larger than the area at the top of each protrusion 17a formed flat area 17f Accordingly, the preheating time for warming the module base can be adjusted. 13 to a specific temperature if the module base 13 the forward / reverse area15 This results in higher productivity when the modular base 13 the forward / reverse area 15 has.
[0020] Furthermore, the semiconductor device will now be compared with other semiconductor devices using comparative examples. The first comparative example shows... Fig. 8 the module basis 13 with the forward / backward area 15 In the first comparative example, essentially no flat area is created between the cutouts. 15a shaped to fit the protrusions and recesses on a radiator element (not shown). Accordingly, in the first comparison example, the contact surface between the module base is 13 and heating block 98 small. The first comparison example therefore requires a long preheating time to heat the module base. 13 to heat up to a specific temperature.
[0021] As a second comparative example, it shows Fig. 9 the module basis13 with the forward / backward area 17 In the second comparative example, essentially no flat area is found at the top of each lead. 17a formed to fit the protrusions and recesses on a radiator element (not shown). Accordingly, in the second comparison example, the contact surface between the module base is 13 and heating block 98 small. The second comparison example therefore requires a long preheating time to heat the module base. 13 to heat up to a specific temperature.
[0022] In contrast to the first and second comparative examples in the semiconductor device, in this embodiment the feature on the protrusion / recess area allows 15 , 17 the module base 13 The intended flat area provides a large contact surface between the module base and the module base. 13 and heating block 98 This contributes to improved productivity.
[0023] A smaller thickness (Z-direction) of the module base 13 is better suited. The modular base 13 However, a thin material can deform under the pressure of the mold during forming. To prevent such deformation, the module base has a 13 preferably a thickness of, for example, approximately 1.5 to 15 mm, or better yet, approximately 3.0 to 8.0 mm.
[0024] The rib base 51 includes a heat radiation distribution area 61 and a basic area 53 The heat radiation distribution areas 61 and the base area 53 They each have their own strengths. Furthermore, as in Fig. 10 shown, the base area 53 on one side of the heat radiation distribution area 61 formed. On a surface of the base region 53 are located forward / backward areas 55 The protrusions 55a of the forward / backward area 55They extend, for example, along the Y-axis. The forward / receding area 55 refers to the entire shape of a surface within the heat radiation distribution area. 61 including the protrusions 55a .
[0025] Here, the product of the width ( X -direction) and the depth ( Y -direction) of the module base 13 as the cross-sectional area of the module base 13 defined. The product of the width ( X -direction) and the depth ( Y -direction) of the heat radiation distribution area 61 is defined as the cross-sectional area of the heat radiation distribution area 61 To improve heat radiation performance, the heat radiation distribution area 61 preferably larger in cross-section than the module base 13To improve productivity through the standardization of the power module, the heat radiation distribution area 61 Furthermore, preferably in cross-section larger than the module base 13 Adherence to this relationship in the cross-sectional area is not mandatory, and the desired improvement in productivity can still be achieved without satisfying the relationship.
[0026] Next, the constructive advantages of the rib base will be discussed. 51 with a two-tiered structure, the basic area 53 and the heat radiation distribution area 61 , described. As a third comparative example, show Fig. 11 and Fig. 12 a semiconductor device that has a ribbed base 351 with a single-level structure without a base area. Fig. 11 shows a power module unit 311 and a rib base 351 before the merger. Fig. 12 shows power module unit 311 and rib base 351 after the merger.
[0027] In the state in which the power module unit 311 and the rib base 351 to be joined, the ladder frame 23 and the heat radiation distribution area 361 the rib base 351 , the conductors are, through a desired insulation distance L (see Fig. 12) be separate from each other. In the third comparative example, the module basis must therefore be 313 the power module unit 311 have a thickness that corresponds to the insulation distance. A module base 313 However, a greater thickness results in a higher heat capacity. This requires a longer preheating time to reach the module base described above. 313 to heat to a specific temperature, which therefore reduces productivity.
[0028] In contrast, they show Fig. 13 and Fig. 14 a semiconductor device with a ribbed base 51 with a two-stage structure. Fig. 13 shows the power module unit 11 and the rib base 51 before the merger. Fig. 14 shows the power module unit 11 and the rib base 51 after joining. In this case, the thickness is the sum of the thicknesses of the module bases. 13 the power module unit 11 and the thickness of the base area 53 the rib base 51 This results in the thickness corresponding to the insulation distance. L corresponds.
[0029] Accordingly, the thickness of the module base can be 13 be smaller than the thickness of the module base 313 in the third comparison example. This allows for a shorter preheating time to heat the module base. 13to heat to a specific temperature, thus contributing to improved productivity. The advantages of the base area. 53 when combining module base 13 and basic area 53 the rib base 51 will be described later.
[0030] A smaller thickness of the base area 53 the rib base 51 is preferred. To ensure the insulation distance, the base area has 53 However, preferably a thickness of approximately 1.5 to 15 mm, in particular approximately 3.0 to 8.0 mm.
[0031] A smaller thickness of the heat radiation distribution area 61 the rib base 51 is better suited. When combining module bases 13 and basic area 53 the rib base 51 The heat radiation distribution area can 61 However, they can deform plastically. Accordingly, the heat radiation distribution area 61preferably a thickness of approximately 3.0 to 30 mm, in particular of 6.0 to 16.0 mm.
[0032] Furthermore, the other surface of the heat radiation distribution area exhibits 61 , as in Fig. Figure 15 shows a variety of the caulking areas 65 and a multitude of convex wall areas 63 on. The several caulking areas 65 extend, for example, along the Y -Axis direction and are spaced at intervals along the X -Arranged in the axial direction. Between the caulking areas 65 A rib insertion groove will be created. 67 formed. At each of the outermost caulking areas 65 (in positive and negative directions on the X -axis) are located between the caulking area 65 and convex wall area 63 a rib insertion groove 67 .
[0033] As described later, the caulking areas 65at the base of the ribs 51 with the radiator fins 81 into the respective rib insertion slots 67 inserted and crimped. This secures several radiator fins. 81 inserted at the heat radiation distribution area 61 Assembled and a semiconductor component with an attached heat sink was built.
[0034] Next, an example of a process for manufacturing the semiconductor device described above will be described. First, the chip is 27 with a power semiconductor element on a module basis 13 arranged and with casting resin 29 sealed and thus forms the power module unit 11 (see Fig. 16).
[0035] The rib base 51 is being prepared, whereby the size of the rib base 51 the amount of heat generated (heat density) from the chip 27 is adjusted. The radiator fins 81are also prepared, whereby the size or number of radiator fins 81 also corresponds to the amount of heat generated (see Fig. 16).
[0036] Next, as in Fig. 16 shown, the power module unit 11 and the rib base 51 arranged so that the forward / receding area 15 the module base 13 the power module unit 11 the forward / backward area 55 of the base area of the rib base 51 opposite. Furthermore, the radiator fins 81 into the respective rib insertion slots 67 in the heat radiation distribution area 61 the rib base 51 inserted.
[0037] Next, as in Fig. 17 shown, press blades 97 each between the radiator fins 81 from a multitude of the radiator fins 81inserted and each comes with the caulking area 65 in contact. The power module unit 11 It is then pressed from above (see arrow). When pressing the power module unit 11 The forward / return area will be 15 (recesses) 15a) the power module unit 11 to the forward / receding area 55 (Protrusions) 55a) of the base area 53 the rib base 51 adapted as in Fig. 18 is shown. Thus, the power module unit 11 with the rib base 51 tied together.
[0038] From the perspective of the semiconductor device manufacturing process, the advantages of the ribbed base are 51 with a two-tiered structure, the basic area 53 and the heat radiation distribution area 61 , described.
[0039] First, the semiconductor device is described in the third comparison example described above. Fig. 19, Fig. 20 and Fig. Figure 21 shows an example of a manufacturing process. Fig. 19 shows the power module unit 311 and the rib base 351 before the assembly. The module base 313 the power module unit 311 is from a first clamping device 99a maintained. The heat radiation distribution area 361 the rib base 351 is clamped by a second clamping device 99b held.
[0040] Fig. 20 shows the assembly of the power module unit 311 and rib base 351 The modular basis 313 and the heat radiation distribution area 361 are achieved by pressing the module base 313 , which from the first clamping device 99a is held in the direction of the heat radiation distribution area 361, which is from the second clamping device 99b is held, clamped. Fig. Figure 21 shows the joining of the radiator fins 81 and rib base 351 The radiator fins 81 are built on the rib base 351 crimped.
[0041] The problems that can occur in the third comparative example are in Fig. 22 and Fig. 23 shown. As in Fig. 22 shown, is used for the assembly of power module units 311 and rib base 351 the power module unit 311 in the direction of the heat radiation distribution area 361 pressed. At this point, the position (X-direction) of the second clamping device is 99b , which define the heat radiation distribution area 361 holds at a distance M from the position (X-direction) of the first clamping device 99a removed, which the module base 313 the power module unit 311holds.
[0042] Accordingly, it acts in the heat radiation distribution area 361 the pressure exerted on the first clamping device 99a held position (point of force) that is M away from the second clamping device 99b The held position (pivot point) is removed. Thus, the power module unit is affected 311 The resulting pressure exerts an increased moment on the rib base. 351 This allows the rib base to swell. 351 , as in Fig. 23 shown, plastically deform.
[0043] In contrast to the third comparative example, the rib base in the semiconductor device in this embodiment 51 the heat radiation distribution area 61 and the base area 53 As in Fig. The size of the base area is shown in 24. 53 the size of the module base 13This allows for a shorter distance between the position (X-direction) of the second clamping device. 99b , which covers the basic area 53 holds, and the position (X-direction) of the first clamping device 99a , which form the module base 13 the power module unit 11 It prevents pressure from being applied to the rib base. 51 when applying pressure to the power module unit 11 plastically deformed.
[0044] There are three methods for assembling power module units 11 , rib base 51 and radiator fins 81 The first procedure is the assembly of the power module unit. 11 and the rib base 51 together and then the joining of the radiator fins 81 and the rib base 51 together. The second process is initially the joining of the radiator fins.81 and the rib base 51 and then the assembly of the power module unit 11 and the rib base 51 together. In the third method, power module units are used. 11 , rib base 51 and radiator fins 81 joined together at the same time. Each of these methods can prevent the rib base from shifting. 51 plastically deformed when pressure is applied to the module base 13 is exercised by the power module unit.
[0045] When assembling power module units 11 and rib base 51 is the alignment between the forward / receding area 15 the module base 13 and forward / receding area 55 of the base area 53 Important. If forward / receding area 15 and forward / receding area 55If the protrusions are misaligned, the following problems can occur. It may not be possible to position them correctly. 55a of the base area 53 into the recesses 15a the module base 13 be inserted. Even if the protrusions 55a into the recesses 15a A higher pressure is required to use the power module unit. 11 and rib base 51 to combine them, resulting in a change in the chip's properties. 27 can lead to this. Furthermore, the chip 27 or the power module unit 11 be damaged.
[0046] To avoid such potential problems, the power module unit 11 and the rib base 51 preferably joins them together, while the power module unit 11 (Module basis 13 ) from the first clamping device 99a and the rib base 51(Basic part) 53 ) from the second clamping device 99b is held. With the first and second clamping devices 99a and 99b The alignment accuracy between the power module unit will be improved. 11 and rib base 51 improved.
[0047] From this perspective, a deformation protection area should be included. 69 (see Fig. 55) and a support mechanism 95 (see Fig. 57), which are described later, are designed to avoid plastic deformation of the rib base such that the module base 13 and rib base 51 can be held by the respective device clamps.
[0048] When pressing the power module unit 11 towards the base of the ribs 51 The caulking areas will be 65 in contact with the pressing blades 97 bent, so that the corresponding radiator fins 81to be caulked. That's how it is, as in Fig. 18 shown, the power module unit 11 with the rib base 51 connected and a large number of the radiator fins 81 firmly attached to the rib base 51 Assembled. The production of the semiconductor component as a power module, which is joined with a heat sink, is thus completed.
[0049] The power module unit is used in the semiconductor device described above. 11 and the rib base 51 They are prepared as separate bodies, which improves productivity in the manufacturing of the semiconductor device. The explanation for this fact is given below in a fourth comparative example, using a semiconductor device as an example.
[0050] As in Fig. 26 shown, is in a semiconductor device 501 in the fourth comparative example a ladder frame 507on a surface of a base plate 503 arranged, with an insulating layer between them 505 is arranged. A chip 511 is measured via a plumb line 509 with the ladder frame 507 connected. The chip 511 etc. is made with a casting resin 513 sealed. The other surface of the base plate 503 is exposed and has a large number of radiator fins 515 equipped.
[0051] In the semiconductor device 501 is the base plate 503 with the chip 511 equipped with a power semiconductor element tailored to the intended use. For example, the semiconductor component 501 mounted chip 511 A relatively large amount of heat is generated, so large-format radiator fins are used. 515 This is necessary so that the heat can be radiated efficiently. An increase in the number of radiator fins is required. 515is also required. However, if the semiconductor component 501 mounted chip 511 exhibiting relatively low heat generation, the size and number of radiator fins should be considered. 515 be adjusted accordingly.
[0052] Thus, the semiconductor component requires 501 In the fourth comparative example, the size, number, etc. of the radiator fins are considered. 515 custom-cut base plate 503 Therefore, a [something] on the base plate 503 A custom-designed mold is required to shape the chip. 511 etc. with casting resin 513 to seal it. This leads to a reduction in productivity.
[0053] In contrast to the semiconductor device 501 In the fourth comparative example, the semiconductor device 1 in this embodiment power module unit 11 and rib base 51created as separate bodies and based on the heat density of the power module unit 11 tailored rib base 51 is connected to the power module unit 11 connected. Thus, a unified module base can be established. 13 as a module basis 13 the power module unit 11 be used.
[0054] Let's take here, as in Fig. 27 shows two types of semiconductor devices 1 with different thermal densities of the power module units (thermal density A > thermal density B). In this case, a common mold can be used to seal the chip etc. with the casting resin, even though the power module units 11 They exhibit different heat densities. This affects the productivity of the semiconductor device. 1 improved.
[0055] On the side of the rib base 51 can the rib base 51tailored to the heat density of the power module unit 11 can be manufactured. For example, the rib base can be... 51 with small-dimensioned radiator fins 81a be equipped (see middle of right column in Fig. 27). The rib base 51 can be achieved with a smaller number of radiator fins 81b be equipped (see below in the right-hand column in Fig. 27). A semiconductor device 1 with the heat density B can use a finned base with radiator fins that are based on the heat density A is tailored (see above in the right column in Fig. 27). Preparation of the performance module unit 11 and the rib base 51 Being separate bodies thus allows for a greater range of modifications, e.g. in the placement of the radiator fins. 81 .
[0056] As in Fig. 10 and Fig. 15 shown, are in the semiconductor device described above 1 Holes 71 at the four corners of the heat radiation distribution area 61 the rib base 51 formed by inserting screws / bolts. 85 into the respective holes 73 can the semiconductor component 1 on a mounting chassis 83 to be attached, as in Fig. Figure 28 shows the heat radiation distribution area. 61 the rib base 51 It also serves as an air route.
[0057] In the semiconductor device in this embodiment, as shown in Fig. Figure 29 shows the peripheral area of the heat radiation distribution area. 61 an area R1 on, in which there is no caulking area 65 or convex wall area 63 is formed, on which the semiconductor component 1 at the chassis mounting 83is attached. If an air passage is provided, the peripheral area of the heat radiation distribution area 61 the area R1 , in which there is no caulking area 65 or convex wall area 63 is formed.
[0058] As a semiconductor component 1 must the heat radiation distribution area 61 however not necessarily the area R1 exhibiting an area where there is no caulking 65 or convex wall area 63 is formed. As in Fig. 30 shown, caulking areas can 65 and convex wall areas 63 at the edge of the heat radiation distribution area 61 be formed, and such a semiconductor device 1 It can also have the advantages described above.
[0059] The rib base described above 51 of the semiconductor device 1Therefore, in addition to merging with the module base, it also serves 13 the power module unit 11 In the following way. The rib base 51 serves to connect the power module unit 11 heat generated by the base area 53 and the heat radiation distribution area 61 to the radiator fins 81 to conduct and transfer the heat through the radiator fins 81 to release outwards. Furthermore, the rib base serves 51 to define an air path of the radiator fins 81 Furthermore, the rib base serves 51 as a medium that the semiconductor device 1 at the chassis mounting 83 with screws / bolts 85 in holes 73 fixed.
[0060] Next, various modifications of the semiconductor device in its embodiment will be described. 1described. In the semiconductor device, in every variation, the same elements are used as in Fig. 1 etc. The semiconductor component shown is identically labelled, and the explanation is repeated only if necessary. First variation
[0061] As a semiconductor device, in a first modification, an exemplary modification of the pattern of the protrusion / recess area formed on the base area of the rib base is described.
[0062] In the semiconductor device described above, the protrusion / recess region 55 , which is based on the base area 53 is formed in a continuous process along the Y -Axis-direction pattern formed. The forward / receding area 55 However, it is not necessarily limited to a constantly expanding pattern. As in Fig. As shown in 31, any advantage 55a , which is based on the base area 53 along the Y-Axis direction is formed, exhibiting an area where the projection is not formed. That is, every projection 55a of the base area 53 may have a discontinuous area.
[0063] If every advantage 55a , which runs along the Y -Axis direction extends, has an area where the projection is not formed, the contact surface between module base 13 (recesses) 15a) and rib base 51 (Protrusions) 55a) Reduced. The reduction of the contact area allows for a reduction in the pressing force when connecting the power module unit. 11 with the rib base 51 This will prevent damage to the chip. 27 etc., which are made with casting resin 29 are sealed, reduced. Discontinuous areas that are in recesses 15a the module base 13 (see Fig. 3) are planned, would also reduce the contact area and thus reduce the pressing load.
[0064] However, if the contact surface between the module base 13 and rib base 51 If the thermal resistance is reduced too much, it increases. Accordingly, the length of the projections should be adjusted. 55a the rib base 51 according to the thermal design, so that a desired contact area between the module base is achieved. 13 and rib base 51 can be achieved.
[0065] In the semiconductor device 1 can any recess 15a (see Fig. 3), which is formed along the Y-axis direction, with respect to the module base 13 the power module unit 11 formed pattern of the forward / backward area 15exhibit a discontinuous area where the recess is not formed, similar to the protrusion / recess area 55 of the base area 53 the rib base 51 .
[0066] Furthermore, regarding the pattern of the caulking areas 65 (see Fig. 32), which are located on the heat radiation distribution area 61 the rib base 51 are formed, each caulking area 65 , which runs along the Y -Axis direction is formed, have an area in which the caulking area is not formed.
[0067] The length of the projections 55a of the base area 53 in Y -Axis direction, the length of the recesses 15a the module base 13 in Y -Axis direction and the length of the caulking areas 65 of the heat radiation distribution area 61The lengths in the Y-axis direction can each be adjusted to an appropriate level, e.g., due to thermal design considerations. The effects on the length of the caulking areas 65 in Y -Axis direction will be described later. Second variation
[0068] As a semiconductor component in a second modification, an exemplary modification of the pattern of the protrusion / recession area etc. formed on the module basis is described.
[0069] In the semiconductor device described above 1 (see Fig. 1) the forward / return area is located 15 based on modules 13 in a pattern extending continuously along the Y-axis. The forward / receding area 15 However, it is not necessarily limited to a constantly expanding pattern.
[0070] As in Fig. 33 and Fig. 34 shown, can be based on the module 13pin-shaped protrusions 15b be formed. In this case, as in Fig. 35 and Fig. 36 shown, on the base area 53 the rib base 51 pin-shaped recesses 55b formed. The performance module unit 11 can be used with the rib base 51 They are connected by the pin-shaped projections 15b the module base 13 into the pin-shaped recesses 55b of the base area 53 They can be used. This results in the same advantages as with the semiconductor device described above. 1 (see Fig. 1). Third variation
[0071] As a semiconductor device in a third modification, an exemplary modification of the thermal radiation distribution area is described.
[0072] Fig. Figure 37 shows an exploded side view with a partial cross-section of the semiconductor device. 1 As in Fig. Figure 37 shows that they are in the semiconductor device 1 in the third variation the caulking areas 65 and convex wall areas 63 alternating on the heat radiation distribution area 61 arranged.
[0073] As in Fig. Figure 38 shows the caulking of the caulking areas. 65 and when inserting the radiator fins 81 into the rib insertion slots 67 Pressure (press load) is exerted from above, so that the caulking areas 65 by pressing blades 97 They can be plastically deformed. This is how the radiator fins are shaped. 81 firmly connected to the heat radiation distribution area 61 tied together.
[0074] The semiconductor device 1 The third variation requires less pressing force than the semiconductor component described above. 1 (see Fig. 1) to remove a large number of the radiator fins 81to crimp, provided that the number of components on the semiconductor device 1 radiator fins mounted in the third variation 81 same as that of the in Fig. 1 of the depicted semiconductor device 1 is.
[0075] The number of caulking areas 65 in the semiconductor device according to Fig. 37 is half the number of caulking areas 65 in the semiconductor device 1 according to Fig. 1. By reducing the number of crimping areas to be plastically deformed by half, the pressing force required to crimp the crimping areas is reduced by half.
[0076] This prevents casting resin from 29 through the caulking areas 65 The applied pressing force can cause damage (e.g., breakage). This can also lead to errors, such as a change in the chip's properties. 27, which would be caused by the pressing load, are significantly reduced.
[0077] Especially when the connection of the power module unit 11 with the rib base 51 and the assembly of the radiator fins 81 with the rib base 51 If the process is carried out with a single press, a greater pressing force is required. In contrast, if the connection of the power module unit is... 11 with the rib base 51 and the assembly of the radiator fins 81 with the rib base 51 Performed separately, the pressing load is applied twice to the power module unit. 11 (Chip 27 ) applied. To enhance the properties by applying the resin to the surface. 29 sealed chip 27 To have less influence on the applied pressing force, it is important to minimize the pressing force. Fourth variation
[0078] As a semiconductor component in a fourth modification, a further exemplary modification of the pattern of the protrusion / recession area formed on the module basis is described.
[0079] In the semiconductor device described above 1 (see Fig. 1) are cutouts 15a based on modules 13 and protrusions 55a on the base area 53 educated. However, this is not the only possibility.
[0080] As in Fig. As shown in 39, protrusions can 17a (recess section) 17 ) on a modular basis 13 and recesses 57a (recess section) 57 ) on the base area 53 to be formed. Which part, the module base? 13 or the basic area 53 (rib base 51 The presence of protrusions (or recesses) is preferably determined by which module base 13or the basic area 53 The material is to be plastically deformed for joining. In particular, the material is preferably based on the hardness of the material that forms the module base. 13 forms, and based on the hardness of the material that forms the rib base 51 forms, determines.
[0081] Are the recesses created by the protrusions used, for example, for connecting the power module unit? 11 with the rib base 51 When plastically deformed, the material for the element with the protrusions becomes harder than the material for the element with the recesses. This allows the connection to be achieved with a lower pressing force. Fifth variation
[0082] As a fifth variation, a further exemplary variation of the pattern of the protrusion / recess area etc. formed on the module basis is described as a semiconductor component.
[0083] In the semiconductor device described above 1 (see Fig. 1 or Fig. 39) have the projections 17a (Protrusions) 55a) based on modules 13 (Basic section) 53 ) all the same height. Even those on the base area. 53 (Module basis 13 ) formed recesses 57a (recesses) 15a) They all have the same depth.
[0084] However, it is not necessary that all protrusions 17a (Protrusions) 55a) have the same height. Some protrusions 17a (Protrusions) 55a) can be higher than the other protrusions 17a (Protrusions) 55a) It is also not necessary that all cutouts be... 57a (recesses) 15a) have the same depth. Some recesses. 57a (recesses) 15a) can be deeper than the other recesses 57a (recesses) 15a) .
[0085] For example, as in Fig. 40 shown, the protrusions 17b be higher at both ends than the other protrusions 17a . Even the recesses 57b at both ends, which form the projections 17b These can be deeper than the other recesses. 57a .
[0086] When merging the power module unit 11 with the rib base 51 The relatively high projections located at both ends will 17b before the other protrusions 17a in recesses 57b plugged in. This allows for easy alignment between the power module unit. 11 and rib base 51 in a horizontal direction. This allows the power module unit to 11 with the rib base 51 to be connected, with the module base 13 and the rib base 51 are not inclined towards each other.
[0087] If the module base 13 and the rib base 51 The length by which the radiator fins are inclined / tilted relative to each other is the length by which they are tilted. 81 with the caulking areas 65 and the length by which the radiator fins 81 with the convex wall areas 63 come into contact, in some places shorter, when the caulking areas 65 on the radiator fins 81 in the rib insertion grooves 67 The fins may be crimped. This can reduce the holding force in the installation direction (vertically) of the radiator fins. Furthermore, a possible increase in thermal contact resistance can impair the heat radiation output from the fin base. 51 , radiator fins 81 and similar things impair their function as heat sinks.
[0088] In the semiconductor device 1 In the fifth variation, the power module unit 11 with the rib base 51to be connected, with the module base 13 and the rib base 51 are not inclined towards each other. This avoids the potential problems described above.
[0089] In the semiconductor device 1 in the Fig. 33 to Fig. In the second variation shown in 36, an area can consist of a multitude of protrusions. 55b be made higher than the other protrusions 55b Furthermore, some can consist of a variety of pin-shaped recesses. 15b be deeper than the other recesses 15b In this case, the same advantages can be achieved as with the variations described above. Sixth variation
[0090] As a semiconductor component in a sixth variation, an exemplary variation of the placement of the radiator fins is described.
[0091] In the semiconductor device described above 1 (see Fig. 1) both the forward / reverse area 55 of the base area 53 the rib base 51 as well as the caulking areas 65 in the heat radiation distribution area 61 along the Y-axis direction. The forward / receding area 55 and the caulking area 65 However, they do not necessarily have to extend in the same direction.
[0092] For example, in Fig. 41, Fig. 42 and Fig. As shown in 43, the forward / backward area can 55 of the base area 53 along the Y -Axis direction and the caulking areas 65 along the X -Extend in the direction of the axis.
[0093] The size of the mounting chassis is determined for a device (not shown) onto which the semiconductor component is mounted. 1The size of the cooling fins of the semiconductor component to be placed in the chassis is limited by the size of the mounting chassis. Accordingly, it is in a structure with a protrusion / recess area. 55 of the base area 53 and caulking areas 65 of the heat radiation distribution area 61 extend in the same direction, possibly not possible, radiator fins 81 to be inserted into the mounting chassis.
[0094] In such a case, the semiconductor device cuts 1 in the fifth variation the direction in which the caulking areas are 65 extend, the direction in which the forward / backward area extends 55 extends. This can make it possible to insert the cooling fins into the mounting chassis. Seventh variation
[0095] As a semiconductor device in a seventh variation, an exemplary variation of the rib base is described.
[0096] As in Fig. Figure 44 shows the heat radiation distribution area. 61 the rib base 51 only protrusions 55a exhibit. In this case, the heat radiation distribution area 61 preferably such a thickness that is achieved when connecting the power module unit 11 with the rib base 51 not deformed.
[0097] Next, the materials for the module base will be prepared. 13 , the rib base 51 , etc. (see e.g. Fig. 1) which is based on the semiconductor device described above 1 (including the semiconductor device) 1 The module basis is described. 13 and rib base 51They are formed, for example, by machining, die casting, forging, and extrusion. They serve as the material for the module base. 13 and the rib base 51 Aluminum or aluminum alloy is used.
[0098] as material for the radiator fins 81 Aluminum, aluminum alloy, or similar materials are used. Radiator fins 81 , which are designed as plates, exhibit both good workability and good heat dissipation performance. The surfaces of the radiator fins 81 They are embossed, so that tiny dents form on the surfaces. This increases the surface area of the radiator fins. 81 This improves heat dissipation. The embossing can be carried out simultaneously with the die used to press the radiator fins. Therefore, the embossing can be performed without increasing production costs.
[0099] The tiny indentation on the surfaces of the radiator fins 81 can the contact surface between the radiator fins 81 when stacking the radiator fins 81 reduce. When mounting the radiator fins 81 on the heat radiation distribution area 61 A large number of stacked radiator fins will be used. 81 Removed one by one and the removed radiator fins 81 into the rib insertion slots 67 used.
[0100] Reducing the contact area between the stacked radiator fins 81 This allows for a reduction in surface friction between the radiator fins. 81 and thus facilitates the removal of the radiator fins. 81 This can simplify production facilities and reduce production time, thereby improving productivity.
[0101] Furthermore, the caulking areas are reached 65due to the small indentations on the surfaces of the radiator fins 81 then, when the caulking areas 65 for the radiator fins 81 on the heat radiation distribution area 61 to be caulked deeper into the radiator fins 81 The area with the tiny dents is tighter than the area without them. This creates an anchorage that prevents the radiator fins from being pulled out of the crimped areas. 65 This prevents friction in the installation direction of the radiator fins. 81 is increased, thereby increasing the tensile strength in the installation direction (vertical direction) of the radiator fins. 81 improved.
[0102] Are the radiator fins in particular 81 harder than the rib base 51 , the caulking areas become deformed 65 with the radiator fins 81 plastically along the surfaces of the radiator fins 81, instead of embedding themselves in the surfaces of the radiator fins 81 to dig. This increases the tensile strength in the installation direction of the radiator fins. 81 improved.
[0103] Is the rib base 51 However, it is harder than the radiator fins. 81 , caulking areas dig themselves 65 with radiator fins 81 into the surfaces of the radiator fins 81 one, which causes the radiator fins to 81 plastic deformation. This is achieved through the plastically deformed caulking areas. 65 and radiator fins 81 An anchoring effect is created. When the rib base 51 harder than the radiator fins 81 , is the embossing of the surfaces of the radiator fins 81 therefore less effective.
[0104] From the perspective of the strength of the radiator fins 81 on the rib base 51 It is therefore preferable that the surfaces of the radiator fins 81so that tiny bumps form on them (requirement) A ), or that the rib base 51 and the radiator fins 81 consist of different materials, with the rib base 51 harder than the radiator fins 81 (Requirement B ). Fulfillment of at least one of the requirements A and B The tensile strength in the installation direction of the radiator fins can be affected. 81 on the rib base 51 improve.
[0105] The tensile strength in the installation direction (vertical direction) of the radiator fins 81 rib-based 51 The results were measured and evaluated. The evaluation is described. In particular, the evaluation was carried out under the condition that the rib base 51 made of aluminum from the series 6000 and the radiator fins 81 made of aluminum from the series 1000(Condition A) were manufactured. The evaluation was also carried out for a comparative example under the condition that the rib base 51 and the radiator fins 81 Both are made of 1000 series aluminum.
[0106] The results are in Fig. 45 shown. The in Fig. The base model 45 of the A6000 series is the result under certain conditions. A The basis of the A1000 series is the result under certain conditions. B (Comparative example). Three radiator fins were evaluated for each of states A and B. As in Fig. As shown in Figure 45, it was found that the tensile strength under the following conditions A approximately 2.5 to 3.6 times higher than the tensile strength under the given condition B (Comparative example).
[0107] The material for the module base 13 , the rib base 51 and the radiator fins 81is not limited to aluminum or aluminum alloys. For example, manufacturing radiator fins from copper plates, which have a higher thermal conductivity than aluminum materials, can further improve heat radiation performance from a thermal radiation perspective than radiator fins made of aluminum materials.
[0108] The radiator fins are located in the semiconductor device described above. 81 firmly connected to the heat radiation distribution area 61 connected by the radiator fins 81 into the rib insertion slots 67 used and the caulking areas 65 to be crimped. In a heat sink assembled in this way, in which the radiator fins 81 and the rib base 51Since the parts are joined together by crimping, the aspect ratio can be freely designed (adjusted), unlike die casting or extrusion, where the aspect ratio limits the work. This improves the heat dissipation performance of the heat sink.
[0109] Here we assume that a heat sink in which the radiator fins are located 81 have a thickness of 0.6 to 1.0 mm, the rib insertion grooves 67 the rib base 51 have a width of 0.8 to 1.2 mm and the radiator fins 81 exhibiting a repetition rate of, for example, 3 to 5 mm. It is assumed that such a heat sink is virtually impossible to form by die casting and extrusion.
[0110] However, such a heat sink can be created by preparing a fin base and radiator fins as separate components and then joining them by caulking. It should be noted that the numerical values for thickness, width, and repetition rate described above are exemplary and not exhaustive. These values can be adjusted according to the specific application.
[0111] By evaluating the relationship between the surface roughness of the module base 13 and the rib base 51 The thermal contact resistance was confirmed to show that a surface roughness (Ra) of approximately 0.5 µm, a very smooth surface, reduces the thermal contact resistance. Surface roughness (Ra) is the arithmetic mean roughness.
[0112] Regarding the surface roughness of the radiator fins 81Regarding this, it was found that by using rolled steel, a surface roughness (Ra) of approximately 0.3 µm can be achieved without increasing production costs. It was confirmed that lower surface roughness offers better heat dissipation performance. Design 2
[0113] A semiconductor device in embodiment 2 is described below. Fig. Figure 46 shows an exploded side view with a partial cross-section of the semiconductor device. As in Fig. As shown in 46, the semiconductor device 1 the power module unit 11 , the rib base 51 and a large number of the radiator fins 81 on.
[0114] In the rib base 51 is the thickness TH of the heat radiation distribution area 61 greater than the thickness TB of the base area 53Furthermore, the semiconductor component is the same as the one in Fig. 1 Semiconductor component shown, etc. The same parts are thus referred to identically and their explanation is not repeated unless necessary.
[0115] Next, an example of a process for manufacturing the semiconductor device described above will be described. As in Fig. As shown in 47, the power module unit 11 using the same process as in Fig. The process shown in section 16 was carried out. The rib base 51 and the radiator fins 81 are being prepared. The power module unit 11 and the rib base 51 are arranged so that the forward / receding area 15 the module base 13 the forward / backward area 55 opposite the base area. Furthermore, the radiator fins 81 into the respective rib insertion slots 67in the heat radiation distribution area 61 the rib base 51 used.
[0116] Next, as in Fig. 48 shown, press blades 97 each between two radiator fins 81 in the multitude of radiator fins 81 inserted and each comes with caulking areas 65 in contact. The power module unit is then... 11 Pressed from above (see arrow).
[0117] When pressure (press load) is applied to the power module unit 11 The forward / return area is exercised 15 (recesses) 15a) the power module unit 11 on the forward / backward area 55 (Protrusions) 55a) of the base area 53 the rib base 51 attached, as in Fig. 49 is shown. Thus, the power module unit 11 with the rib base 51connected. When pressing the power module unit 11 towards the base of the ribs 51 The caulking areas will be 65 in contact with the pressing blades 97 pushed out or bent, so that the respective radiator fins 81 be caulked.
[0118] This is the power module unit 11 with the rib base 51 connected and a large number of the radiator fins 81 is firmly attached to the rib base 51 Assembled. The semiconductor component as a power module is now complete.
[0119] In the semiconductor device described above, the thickness TH of the heat radiation distribution area 61 greater than the thickness TB of the base area 53 This can prevent the heat radiation distribution area from changing. 61 It deformed when the pressing load was applied. The explanation for this fact is given below.
[0120] If the heat radiation distribution area 661 As a fifth comparative example, if the heat radiation distribution area is thinner, then it is 661 not rigid with respect to the pressing force required for joining (cabling) the power module 11 and a rib base 651 is brought together (see Fig. 50). In this case, it can happen that the heat radiation distribution area 661 could plastically deform into a curved shape, as in Fig. 50 shown.
[0121] To prevent such plastic deformation of the heat radiation distribution area 661 To prevent this, the semiconductor component described above has 1 (see Fig. 46) a rib base 51 , where the thickness TH of the heat radiation distribution area 61 is greater than the thickness TB of the base area 53 .
[0122] The area for heat radiation distribution 61 the rib base 51 The required thickness varies depending on the material of the rib base. 51 , the pressing load and the permissible deformation amount of the heat radiation distribution area 61 Does the heat radiation distribution area deform? 61 The following problems can occur if the deformation exceeds the permissible amount.
[0123] One potential problem is that the holes 73 at the four corners of the heat radiation distribution area 61 outside the mounting positions in the mounting chassis 83 may lie (see Fig. 28) and the semiconductor device 1 (rib base 51 ) not on the mounting chassis 83 can be attached (Problem A).
[0124] Another potential problem is that the radiator fins might get stuck during installation. 81on the rib base 51 (Heat radiation distribution area) 61 ) the rib insertion grooves 67 are outside the positions where the radiator fins are located. 81 to be mounted, and the radiator fins 81 not into the rib insertion slots 67 can be used (Problem B).
[0125] Another possible problem is an insufficient contact area (contact surface) between caulking areas. 65 etc. and radiator fins 81 in the rib insertion grooves 67 , which leads to insufficient tensile strength in the installation direction of the radiator fins 81 (Problem C) leads to...
[0126] Problems B and C are described in more detail. Assume the heat radiation distribution area 661 It deforms plastically into a curved shape, as in Fig. 50 is shown. In this case, the radiator fins can 81during the assembly of the radiator fins 81 on the heat radiation distribution area 661 not deep into the rib insertion grooves 67 used, as in Fig. 51 is shown. Accordingly, some radiator fins may 81 not with the underside of the heat radiation distribution area 661 come into contact with each other.
[0127] At the time of caulking, a mechanism is used to press the radiator fins together. 81 against the underside (rib contact surface) of the heat radiation distribution area 661 provided for. Even if an elastic material is used to prestress the radiator fins. 81 Attached to the mechanism, an area of the radiator fins 81 not with the underside (rib contact surface) of the heat radiation distribution area 661 come into contact, as in Fig. 51 shown, depending on the extent of the plastic deformation of the heat radiation distribution area 661 .
[0128] Furthermore, the distribution area of thermal radiation shifts during plastic deformation. 661 the positions of the rib insertion grooves 67 from before the plastic deformation of the heat radiation distribution area 661 In this case, radiator fins are used. 81 , whose positions are fixed, not in the corresponding rib insertion grooves at the time of caulking 67 This may be used. This can negatively impact productivity.
[0129] Even if the radiator fins 81 into the corresponding rib insertion slots 67 When used, variations in the contact length between radiator fins can occur. 81 and the heat radiation distribution area 661 come. As in Fig. 52 and Fig. Figure 53 is shown in the central area of the heat radiation distribution area. 61 the contact length between convex wall areas 63 of the heat radiation distribution area 661 and radiator fins 81 Sufficient. At the ends of the heat radiation distribution area. 661 is the contact length between the convex wall areas 63 of the heat radiation distribution area 661 and the radiator fins 81 however, less so.
[0130] Such a shorter contact length causes a higher thermal contact resistance between the convex wall areas. 63 of the heat radiation distribution area 661 and the radiator fins 81 This worsens the thermal stability of the heatsink, which consists of a finned base. 651 and radiator fins 81 consists.
[0131] Furthermore, a shorter contact length between convex wall areas leads to 63 of the heat radiation distribution area 661 and radiator fins 81 , as in Fig. 53 shows only a lower resistance against an impact on the radiator fins. 81 applied external force FR . Although Fig. 53 reduced resistance to an external force FR shows the outer surface of the radiator fins. 81 This also applies to an external force. FR , which are located on the inside of the radiator fins 81 applied or applied in the direction of the air path.
[0132] Given such potential productivity and performance problems, it is important to prevent the heat radiation distribution area from changing. 61 when attaching the radiator fins 81 on the rib base 51 (Heat radiation distribution area) 61) bends and plastically deforms.
[0133] The semiconductor device described above (see Fig. 46) has a rib base 51 , where the thickness TH of the heat radiation distribution area 61 is greater than the thickness TB of the base area 53 This will change the heat radiation distribution area. 61 It improves its stiffness and prevents plastic deformation.
[0134] Next, variations of the semiconductor device according to the embodiment will be discussed. 2 described. In the semiconductor device, in every variation, the same elements are used as in the Fig. The semiconductor component shown in 46 etc. is identically labelled, and the explanation is repeated only if necessary. First variation
[0135] As a semiconductor component, an exemplary modification of the rib base is described in a first modification.
[0136] Fig. Figure 54 shows an exploded side view with a partial cross-section of the semiconductor device. 1 As in Fig. As shown in section 54, the first modification of the semiconductor device contains deformation protection areas. 69 with a thickness in the heat radiation distribution range 61 the rib base 51 on the side where the power module unit 11 is connected, provided for.
[0137] As in Fig. 55 and Fig. As shown in section 56, there are two deformation protection areas. 69 arranged at a distance in the Y-axis direction, with the base area 53 between two deformation protection areas 69 sits. Each of the two deformation protection areas 69 extends along the X-axis direction. The deformation protection areas 69 will be together with the basic area 53 and the heat radiation distribution area 61formed together (possibly in one piece).
[0138] In the semiconductor device 1 In the first variation, the deformation protection areas can 69 with sufficient thickness across the heat radiation distribution area 61 prevent the heat radiation distribution area from changing 61 when connecting the power module unit 11 with the rib base 51 bends and plastically deforms.
[0139] Instead of the deformation protection areas 69 on the heat radiation distribution area 61 To provide, a support mechanism for supporting the heat radiation distribution area can be provided on a manufacturing device. 61 be provided. Such a support mechanism can also prevent the heat radiation distribution area from changing. 61 Plastically deformed. As in Fig. 57 shown, touches and supports the support mechanism 95on a manufacturing device the heat radiation distribution area 61 , while the power module unit 11 with the rib base 51 is connected. This prevents the heat radiation distribution area from changing. 61 bends and plastically deforms. Second variation
[0140] As a semiconductor component in a second modification, a further exemplary modification of the rib base is described.
[0141] As in Fig. 58 and Fig. Figure 59 shows the heat radiation distribution area 61 the rib base 51 in the semiconductor device, in the second modification, an area 71 on, in which there is no caulking area 65 or convex wall area 63 is formed. The area 71 is located at the point facing the area, where the base area 53 is arranged.
[0142] In the semiconductor device in the second modification, the area can 71 in the heat radiation distribution area 61 , in which there is no caulking area 65 or convex wall area 63 formed, prevent the heat radiation distribution area from changing 61 when connecting the power module unit 11 with the rib base 51 bends and plastically deforms.
[0143] As in Fig. 60 is shown when connecting the power module unit 11 with the rib base 51 a press load absorption 91 with the area 71 brought into contact where there is no caulking area 65 or convex wall area 63 is formed. This allows the heat radiation distribution area to be 61 through the press load absorption 91 supported and thus protected from curvature and plastic deformation. Third variation
[0144] From the perspective of heat radiation performance, it is preferable that the area 71 (Pressure load absorption) in the heat radiation distribution area 61 , in which there is no caulking area 65 or convex wall area 63 is formed, as small as possible. If the area is formed 71 , in which there is no caulking area 65 or convex wall area 63 is formed directly below the module base 13 , as in Fig. As shown in 60, arranged so that radiator fins are not directly under the chip 27 , which is based on the power module unit 11 It is mounted, arranged. This can reduce the heat radiation output. Accordingly, for example, the area 71 , in which there is no caulking area 65 or convex wall area 63 is formed, can be divided into a multitude of sections, such as in Fig. 61 shown. Fourth variation
[0145] Two caulking processes can be performed to secure the power module unit. 11 , the rib base 51 and the radiator fins 81 to assemble one another. In particular, the power module unit can be used to... 11 (Module basis 13 ) and the rib base 51 They are first joined together, and then the rib base is formed. 51 (Heat radiation distribution area) 61 ) and the radiator fins 81 combined.
[0146] The rib base 51 It is manufactured by machining, die casting, forging, or similar processes. Accordingly, it can be, as in Fig. 62 shown, within a dimensional tolerance for height variations of the convex wall areas 63 in the heat radiation distribution area 61come. In this state, when the load for caulking the module base 13 and basic area 53 applied together and the load from the convex wall areas 63 and the press load capacity 91 When recorded, higher convex wall areas can be observed. 63 are subjected to a concentration of stress and thus deform.
[0147] Accordingly, the following steps are taken during the production of the rib base: 51 the convex wall areas 63 made higher in advance than the caulking areas 65 , as in Fig. 63 is shown. Subsequently, as in Fig. 64 and Fig. 65 shown, which are from the caulking areas 65 protruding areas of the convex wall regions 63 e.g. by cutting so that the height of the convex wall areas is reduced 63 equal to the height of the caulking areas 65 is.
[0148] Next, as in Fig. 66 shown, the power module unit 11 (Module basis 13 ) and the rib base 51 joined together. At this point, the load for caulking the module base is applied. 13 and basic area 53 together with the convex wall areas 63 , the caulking areas 65 and the press load capacity 91 recorded. Thus, the power module unit can be 11 with the rib base 51 to be joined together, which have no area 71 has no caulking area 65 or convex wall area 63 is formed. Then the radiator fins are... 81 (not shown) at the heat radiation distribution area 61 the rib base 51 caulked. Then the power module unit 11 , the rib base 51 and the radiator fins 81 brings them together.
[0149] In the finned heat sink 51 and radiator fins 81 is the thermal contact resistance of each contact section between convex wall area 63 of the heat radiation distribution area 61 and a radiator fin connected in parallel, with the number of contact sections corresponding to the number of radiator fins. In the overall heat sink, which has multiple radiator fins, the thermal resistance is the inverse of the sum of the inverses of the individual thermal resistances. Therefore, a partial increase in the contact thermal resistance, if present, has only a minor effect on the overall thermal resistance. embodiment 3
[0150] A semiconductor device in embodiment 3 is described below. Fig. Figure 67 shows an exploded side view with a partial cross-section of the semiconductor device. As in Fig. As shown in 67, the semiconductor component 1the power module unit 11 , the rib base 51 and a large number of the radiator fins 81 on.
[0151] Between the module base 13 and the basic area 53 There is a thermally conductive adhesive. 93 or a thermally conductive grease. Incidentally, the semiconductor component is the same as the one in Fig. 1 Semiconductor component shown, etc. The same parts are thus referred to identically and their explanation is not repeated unless necessary.
[0152] In the semiconductor device described above 1 Can the thermal contact resistance between the module base be increased? 13 and basic area 53 through thermally conductive adhesive 93 or the heat-conducting grease is reduced. Furthermore, the use of thermally conductive adhesive 93 etc. the bond strength between module base 13 and basic area 53partially secure. Thus, the number of modules can be increased. 13 planned projection / receding areas 15 and the number of items on the base area 53 existing projection / receding areas 55 to be reduced. The reduction of the number of forward / backward areas. 15 , 55 enables a reduction in the pressing load when joining (cabling) the module base 13 and the base area 53 together. This can prevent the heat radiation distribution area from changing. 61 the rib base 51 bends and plastically deforms.
[0153] Next, a modification of the semiconductor device in embodiment will be presented. 3 described. In the modified semiconductor device, the same elements are used as in the one described. Fig. The semiconductor component shown in section 67 is labelled identically, and the explanation is repeated only if necessary. modification
[0154] Fig. Figure 68 shows an exploded side view with a partial cross-section of the semiconductor device. As in Fig. 68 are shown in the semiconductor device 1 in the modified module basis 13 and the base area 53 via thermally conductive adhesive 93 connected (held).
[0155] Is there sufficient joining force (adhesion force) between the module base? 13 and basic area 53 only via thermally conductive adhesive 93 guaranteed, the module base 13 and the base area 53 only via thermally conductive adhesive 93 connected (held) without a forward / reverse area 15 , 55 (see Fig. 67) is provided for.
[0156] The semiconductor components described in the embodiments can be combined in various ways, depending on requirements.
[0157] The embodiments described herein are exemplary and not limiting.
[0158] The present invention is effectively applicable to a semiconductor device (power module) that is joined with a heat sink. Reference symbol list 1 Semiconductor device 11 Power module unit 13 Module basis 15 Forward / Reverse Area 15a, 15b recess 15f flat area 17 Forward / Receding Area 17a, 17b advantage 17f flat area 21 Insulating layer 23 ladder frames 25 Lot 27 Chip 29 Casting resin 51 Rib base 53 Basic area 55 Forward / reverse area 55a, 55b advantage 57 Forward / reverse area 57a, 57b recess 61 Heat radiation distribution area 63 convex wall area 65 Caulking area 67 Rib insertion groove 69 Deformation protection area Area 71 73 holes 81, 81a, 81b Radiator fin 83 chassis 85 Screw / Bolt 91 Press load capacity 93 thermally conductive adhesive 95 Support mechanism 97 Press blade 98 Heating block 99a first clamping device 99b second clamping device TB, TH Thickness FR external force R1 area QUOTES INCLUDED IN THE DESCRIPTION
[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature
[0000] JP 5236127 A
[0003] JP 2012049167 A
[0003] WO 2011 / 061779
[0003]
Claims
[1] Semiconductor device comprising: - a power module unit, a rib base and a radiator rib, wherein the power module unit comprises the following: - a modular base, - a power semiconductor element mounted on the module base, and - a casting resin which seals the power semiconductor element, wherein the rib base has the following: - a heat radiation distribution area with the radiator fin, and - a base area formed on the heat radiation distribution area, wherein the module base is connected to the base area. [2] Semiconductor device according to claim 1, wherein the module base has a first protrusion / recess region and the base region has a second protrusion / recess region adapted to the first protrusion / recess region. [3] Semiconductor device according to claim 2, wherein the first protrusion / recession area extends in a first direction, and the second protrusion / recession area extends in the first direction. [4] Semiconductor device according to claim 3, wherein at least one, the first protrusion / reversion region and the second protrusion / reversion region has a discontinuous region. [5] Semiconductor device according to claim 1, wherein in the rib base, the base area has an initial thickness, the heat radiation distribution area has a second thickness, and the second thickness is greater than the first thickness. [6] Semiconductor device according to claim 1, wherein a deformation protection area is formed on a first side of the heat radiation distribution area, wherein the first side is a side on which the base area is formed, wherein the deformation protection area has a thickness and extends in a different area than an area in which the base area is formed. [7] Semiconductor device according to claim 1, wherein a crimping area is formed on a second side of the heat radiation distribution area, the second side being a side on which the radiator fin is mounted, the crimping area enabling the mounting of the radiator fin. [8] Semiconductor device according to claim 7, wherein the crimping area extends in a second direction. [9] Semiconductor device according to claim 7, wherein a convex wall area and another convex wall area at a distance are formed on the second side of the heat radiation distribution area and in a sub-area between one convex wall area and the other convex wall area, the caulking area is formed in a different area than the sub-area. [10] Semiconductor device according to claim 2, wherein a thermally conductive adhesive or a thermally conductive grease is arranged between the first protrusion / recess of the module base and the second protrusion / recess of the base area. [11] Semiconductor device according to claim 1, wherein a thermally conductive adhesive or a thermally conductive grease is arranged between the module base and the base area. [12] Method for manufacturing a semiconductor device comprising the following steps: - Forming a power module unit by attaching a power semiconductor element to a module base and sealing the power semiconductor element with a casting resin, leaving an area of the module base exposed, the area of the module base being on a side opposite the power semiconductor element; - Creating a fin base, including a heat radiation distribution area with a caulking area and a radiator fin insertion groove, and - a base area formed on a region of the heat radiation distribution area, wherein the region of the heat radiation distribution area is located on a side opposite the caulking area and the radiator fin insertion groove; - Positioning the power module unit and the fin base so that the exposed area of the module base faces the base area of the fin base, and placing each of the multiple radiator fins into the corresponding radiator fin insertion slot; and - Connecting the exposed area of the module base and the base area of the fin base together and caulking the caulking area to fit the multitude of radiator fins onto the heat radiation distribution area by pressing the power module unit towards the fin base while a caulking device is in contact with the caulking area, thereby joining the power module unit, the fin base and the multitude of radiator fins together. [13] Method for manufacturing a semiconductor device according to claim 12, wherein When forming the performance module unit, a module base with a first forward / receding area on the exposed area of the module base is used as the module base. where, in the creation of the rib base, a rib base with a second projection / recess area on the base area is used as the rib base, and wherein, in the assembly of the power module unit, the rib base and the multitude of radiator ribs, the power module unit and the rib base are connected to each other by fitting the first protruding / recessed area into the second protruding / recessed area. [14] Method for manufacturing a semiconductor device according to claim 12, wherein the assembly of the power module unit, the fin base and the plurality of radiator fins comprises the following steps: Holding a portion of the module base by a first clamping device (99a) and holding the base portion of the rib base by a second clamping device (99b), and Connecting the module base area and the rib base area together, while the module base area is held by the first clamping device (99a) and the rib base area is held by the second clamping device (99b). [15] Method for manufacturing a semiconductor device according to claim 13, wherein the power module unit, the rib base and the plurality of radiator ribs are joined together using any thermally conductive adhesive and a thermally conductive grease is arranged between the first protrusion / recess area and the second protrusion / recess area. [16] Method for manufacturing a semiconductor device according to claim 12, wherein pressure is exerted on the power module unit, the fin base and the plurality of radiator fins when joining them, while a support mechanism for supporting the heat radiation distribution area is in contact with the heat radiation distribution area from a side on which the power module unit is arranged. [17] Method for manufacturing a semiconductor device according to claim 12, wherein the manufacturing of the rib base comprises the following steps: Producing a ribbed base with a convex wall area on the heat radiation distribution area as a ribbed base, wherein the convex wall area has a second height that is greater than a first height of the caulking area, and Edit the convex wall area so that the second height of the convex wall area is equal to the first height. [18] Method for manufacturing a semiconductor device according to claim 12, wherein the power module unit, the fin base and the plurality of radiator fins are joined together using any thermally conductive adhesive and a thermally conductive grease is introduced between the exposed area of the module base and the base area of the fin base.