DISPLAY DEVICE

By forming transistors with nitrogen-containing conductive layers and controlled oxygen diffusion through heat treatment, the method addresses characteristic variations in oxide semiconductor transistors, enhancing the reliability and stability of display devices.

DE112020000878B4Active Publication Date: 2025-07-31MAGNOLIA WHITE CORP
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Patent Information

Application Number
DE112020000878
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Priority Date
2019-03-28
Filing Date
2020-03-13
Publication Date
2025-07-31
Estimated Expiration
2040-03-13

AI Technical Summary

Technical Problem

Transistors using oxide semiconductors exhibit characteristic variations due to processing temperature during manufacturing, leading to defects such as display unevenness in display devices, necessitating improved reliability.

Method used

A manufacturing method for display devices involving the formation of a gate electrode, gate insulating layer, oxide semiconductor layer, source/drain electrodes with nitrogen-containing conductive layers, and insulating layers, followed by heat treatment to control oxygen diffusion and reduce crystalline defects, enhancing transistor reliability.

Benefits of technology

The method results in a highly reliable display device with stable transistor characteristics, reducing variations in drain current and threshold voltage, thereby improving display performance.

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Abstract

A display device (100) comprising:a transistor (110); anda display element (130) above the transistor (110); wherein the transistor (110) includes: a gate electrode (145) on an insulating surface (141); a gate insulating layer (143) on the gate electrode (145); an oxide semiconductor layer (142) disposed on the gate insulating layer (143) and overlapping the gate electrode (145); source / drain electrodes (147) on the oxide semiconductor layer (142) and the gate insulating layer (143), each comprising a first conductive layer (147a) on the oxide semiconductor layer (142), a second conductive layer (147b) on the first conductive layer (147a), and a third conductive layer (147c) between the first conductive layer (147a) and the oxide semiconductor layer (142);andan insulating layer (149) on the oxide semiconductor layer (142) and the source / drain electrodes (147), wherein the oxide semiconductor layer (142) contains metal materials, wherein the insulating layer (149) contains oxygen, wherein the first conductive layer (147a) contains titanium and nitrogen, wherein the second conductive layer (147b) contains a metal material, wherein the third conductive layer (147c) contains titanium, oxygen, and a portion of the metal materials contained in the oxide semiconductor layer (142), wherein the first conductive layer (147a) and the second conductive layer (147b) are not in physical contact with the oxide semiconductor layer (142), and wherein the third conductive layer (147c) is disposed on the oxide semiconductor layer (142) and is in physical contact with it.;
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Claims

[1] Display device (100) comprising: a transistor (110); and a display element (130) above the transistor (110); wherein the transistor (110) includes: a gate electrode (145) on an insulating surface (141); a gate insulating layer (143) on the gate electrode (145); an oxide semiconductor layer (142) disposed on the gate insulating layer (143) and overlapping the gate electrode (145); Source / drain electrodes (147) on the oxide semiconductor layer (142) and the gate insulating layer (143), each comprising a first conductive layer (147a) on the oxide semiconductor layer (142), a second conductive layer (147b) on the first conductive layer (147a), and a third conductive layer (147c) between the first conductive layer (147a) and the oxide semiconductor layer (142); and an insulating layer (149) on the oxide semiconductor layer (142) and the source / drain electrodes (147), wherein the oxide semiconductor layer (142) contains metal materials, wherein the insulating layer (149) contains oxygen, wherein the first conductive layer (147a) contains titanium and nitrogen, wherein the second conductive layer (147b) contains a metal material, wherein the third conductive layer (147c) contains titanium, oxygen and a part of the metal materials contained in the oxide semiconductor layer (142), wherein the first conductive layer (147a) and the second conductive layer (147b) are not in physical contact with the oxide semiconductor layer (142), and wherein the third conductive layer (147c) is arranged on the oxide semiconductor layer (142) and is in physical contact with it. [2] The display device (100) according to claim 1, wherein a thickness of the third conductive layer (147c) is 2 nm or more and 10 nm or less. [3] The display device (100) according to claim 1, wherein an oxygen content in the third conductive layer (147c) is 10 atomic percent or more.

Citation Information

Patent Citations

  • Semiconductor device

    DE112012004061T5

  • IGZO Devices with Composite Channel Layers and Methods for Forming the Same

    US20150171227A1

  • Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module

    US20150270407A1