OPTOELECTRONIC ARRANGEMENT

Abstract

Optoelectronic arrangement (1) with - at least two semiconductor laser devices (10) configured to emit electromagnetic radiation, and - an optical superposition element (20) with at least one radiation entry surface (20A) and one radiation exit surface (20B), wherein - each semiconductor laser component (10) is assigned an optical component (30), - each semiconductor laser device (10) emits a plurality of spatially separated entry beams (R1), - all incoming beams (R1) of a semiconductor laser device (10) pass through the respective associated optical element (30), wherein several incoming beams (R1) emitted by a semiconductor laser device (10) are fanned out against each other after passing through the optical element (30) in such a way that the incoming beams (R1) enter the optical superposition element (20) at different angles of incidence (α), and - Entrance beams (R1) from different semiconductor laser devices (10) exit at the radiation exit surface (20B) of the optical superposition element (20) superimposed in a plurality of exit beams (R2), wherein - the optical elements (30) have a distance (D) from the optical superposition element (20), - the distance (D) of each optical element (30) is set such that the entrance beams (R1) from different semiconductor laser elements (10) exit together in common exit beams (R2) at the radiation exit surface (20B) of the optical superposition element (20). - the exit beams (R2) superimposed at a common point leave the optical superposition element (20) at a common exit angle (β), - each semiconductor laser device (10) comprises a plurality of waveguides (101) each emitting an entrance beam (R1), and - the waveguides (110) of a semiconductor laser device (10) can be controlled independently of each other.

Description

[0001] An optoelectronic arrangement is described. This optoelectronic arrangement is specifically designed to generate electromagnetic radiation, for example, light perceptible to the human eye.

[0002] One task to be solved is to specify an optoelectronic arrangement that emits electromagnetic radiation with an increased spectral bandwidth.

[0003] Optoelectronic arrangements are known from the following publications: US 2007 / 0 297 061 A1, US 2019 / 0 219 912 A1, DE 10 2012 203 683 A1, US 2018 / 0 231 882 A1, WO 2020 / 008 656 A1, US 6 124 973 A, WO 2008 / 029 337 A1, US 2019 / 0 361 327 A1 and US 2002 / 0 196 414 A1.

[0004] The optoelectronic arrangement comprises at least two semiconductor laser devices configured to emit electromagnetic radiation. One semiconductor laser device is specifically designed to emit coherent or partially coherent electromagnetic radiation. Advantageously, a semiconductor laser device emits electromagnetic radiation with a small spectral bandwidth, low divergence, and high beam intensity.

[0005] The optoelectronic arrangement comprises an optical superposition element with at least one radiation entry surface and one radiation exit surface. The radiation entry surface is specifically designed to couple electromagnetic radiation into the optical superposition element. For example, the optical superposition element may include multiple radiation entry surfaces on different sides of the optical superposition element. The radiation entry surface and / or the radiation exit surface may, in particular, have an antireflection layer. An antireflection layer can advantageously reduce or prevent unwanted reflection of electromagnetic radiation at the radiation entry surfaces and the radiation exit surface of the optical superposition element.

[0006] The optical superposition element is designed to superimpose rays entering the optical superposition element via the radiation entrance surface and to allow them to exit the radiation exit surface. The optical superposition element is preferably formed with a radiation-transparent material. For example, the optical superposition element has a plurality of reflective surfaces designed to reflect and deflect electromagnetic radiation. Preferably, some of the reflective surfaces exhibit wavelength-dependent reflectivity. In particular, the reflective surfaces can be configured, at least partially, as dichroic mirrors. Furthermore, reflective surfaces can also be configured as λ / 4 plates to modify the polarization of incident electromagnetic radiation.

[0007] Each semiconductor laser device is associated with an optical element. This optical element is, for example, a lens. The optical element is typically made of a radiation-transmitting material. For instance, the optical element serves to modify the propagation direction and / or divergence of a beam of light passing through it. Furthermore, several optical elements can be integrated into a cohesive optical structure. Using a cohesive optical structure can advantageously reduce adjustment requirements, as the optical elements within it are rigidly connected.

[0008] Each semiconductor laser device emits a plurality of spatially separated incident beams. In particular, a semiconductor laser device emits a plurality of incident beams, and a semiconductor laser device emits a single incident beam. The incident beams propagate, for example, in a single direction. Preferably, the incident beams are aligned parallel to each other and exit the semiconductor laser device, for example, perpendicular to a radiation output surface of the semiconductor laser device. For example, an incident beam is a Gaussian beam.

[0009] The incident beams strike the radiation entrance surface of the optical superposition element at an entrance distance from each other. An entrance distance is the shortest distance between two incident beams on the radiation entrance surface of the optical superposition element. Preferably, the entrance distance between all incident beams of a semiconductor laser device is the same.

[0010] All incident beams from a semiconductor laser device pass through their respective associated optical element. Several incident beams emitted by a semiconductor laser device are fanned out after passing through the optical element in such a way that the incident beams enter the optical superposition element at different angles. Preferably, one of the incident beams strikes the entrance surface of the optical superposition element perpendicularly.

[0011] Entrance beams from different semiconductor laser devices emerge from the radiation output surface of the optical superposition element, forming a plurality of superimposed exit beams. The exit beams have an exit spacing. This exit spacing corresponds to the shortest distance between any two exit beams on the radiation output surface of the optical superposition element. Preferably, all exit beams have the same exit spacing.

[0012] In other words, the incident beams from different semiconductor laser devices are superimposed at a single point on the optical superposition element's radiation output surface. This results in multiple incident beams from different semiconductor laser devices being focused into a single exit beam. The exit beams, superimposed at a common point, leave the optical superposition element at a common exit angle. Different exit beams, for example, emerge from the optical superposition element's radiation output surface at different points and at different angles relative to each other. Preferably, the exit beams are fanned out relative to one another.

[0013] The optoelectronic arrangement includes - at least two semiconductor laser devices designed to emit electromagnetic radiation, and - an optical superposition element with at least one radiation entry surface and one radiation exit surface, wherein - each semiconductor laser device is assigned an optical element, - each semiconductor laser device emits a plurality of spatially separated entry beams, - all incoming beams of a semiconductor laser device pass through the respective associated optical element, wherein several incoming beams emitted by a semiconductor laser device are fanned out against each other after passing through the optical element in such a way that the incoming beams enter the optical superposition element at different angles of incidence, and - Entrance beams from different semiconductor laser components exit the radiation exit surface of the optical superposition element in a plurality of exit beams superimposed on each other.

[0014] The following considerations, among others, underlie the optoelectronic arrangement described here: Semiconductor laser devices are particularly suitable for manufacturing a compact optical arrangement for use in a portable system. Semiconductor laser devices can generate electromagnetic radiation with a particularly high beam intensity within a small solid angle, making them especially suitable for use in display units or projection devices. However, when using a laser device in the visible wavelength range, undesirable interference effects, such as speckles, are sometimes perceptible to an observer. These interference effects lead to uneven illumination and disturbing patterns. Furthermore, the use of diffractive optics together with electromagnetic radiation with a long coherence length is complicated by further undesirable interference effects.

[0015] The optoelectronic arrangement described here utilizes, among other things, the idea of ​​superimposing electromagnetic radiation from a plurality of semiconductor laser devices in an optical superposition element to generate electromagnetic radiation with an increased spectral bandwidth and consequently a reduced coherence length, while still exhibiting sufficiently good beam quality. Optical elements can fan out parallel beams from the semiconductor laser devices before they enter the optical superposition element, thus enabling particularly simple superposition of beams from different semiconductor laser devices at a radiation output surface of the optical superposition element. According to at least one embodiment of the optoelectronic arrangement, the optical elements are part of the optical superposition element.In other words, the optical elements are integrated into the optical superposition element. The optical elements can be made of the same material as the optical superposition element, thus simplifying the manufacturing of the integrated optical elements. The distance between the optical elements and the optical superposition element is determined by the geometric dimensions of the optical superposition element. An optical superposition element designed in this way exhibits particularly high mechanical stability.

[0016] The optical elements are spaced a certain distance from the optical superposition element. This distance is the shortest direct path between an optical element and the optical superposition element. The distance between the optical element and the optical superposition element influences the entrance distance of the incident beams from a semiconductor laser device when they strike the radiation entrance surface of the optical superposition element. A greater distance between the optical element and the optical element also increases the entrance distance of the incident beams when they strike the optical superposition element.

[0017] The spacing of each optical element is adjusted such that the incident beams from different semiconductor laser elements emerge superimposed at the radiation exit surface of the optical superposition element, forming a single, combined output beam. Each output beam contains at least one incident beam from each semiconductor laser element. For example, each output beam thus forms a white light source independent of other output beams.

[0018] In a projection application, multiple pixels are displayed using a plurality of exit beams. To a good approximation, the spacing of the individual optical elements can be chosen such that the optical path lengths of the entrance beams from all semiconductor laser elements are the same between their exit from the optical element and the radiation output surface of the optical superposition element.

[0019] Each semiconductor laser device comprises multiple waveguides, each emitting an input beam. A waveguide is designed to geometrically guide electromagnetic radiation and, through its dimensions, influences the oscillation of specific electromagnetic modes of the radiation. The waveguide is implemented, for example, as a web waveguide or a finned waveguide within the respective semiconductor device.

[0020] The waveguides of a semiconductor laser device can be controlled independently of each other. This ability to independently and separately control the individual waveguides of each semiconductor laser device allows multiple pixels to be generated simultaneously via a downstream, movable mirror, enabling projection with a particularly high resolution and frame rate.

[0021] According to at least one embodiment of the optoelectronic arrangement, different entrance beams of a semiconductor laser device have different principal wavelengths. The principal wavelength of an entrance beam is the wavelength at which the electromagnetic radiation of the entrance beam exhibits a global intensity maximum.

[0022] Different principal wavelengths of the entrance beams of a semiconductor laser device result in a beneficially increased spectral bandwidth of the electromagnetic radiation emitted by the semiconductor laser device. This allows unwanted optical interference effects in the optoelectronic arrangement to be reduced or avoided.

[0023] According to at least one embodiment of the optoelectronic arrangement, the corresponding input beams from different semiconductor laser devices have different principal wavelengths. This difference in principal wavelength results in a spectral broadening of the electromagnetic radiation, which is superimposed in the output beams.

[0024] According to at least one embodiment of the optoelectronic arrangement, the principal wavelengths of the entrance beams from different semiconductor laser devices differ by at least 10 nm, preferably by at least 20 nm. In particular, different semiconductor laser devices each emit electromagnetic radiation with a color that is perceptible to humans in different ways. For example, one semiconductor laser device emits electromagnetic radiation in the red spectral range, another semiconductor laser device emits electromagnetic radiation in a green spectral range, and another semiconductor laser device emits electromagnetic radiation in a blue spectral range.Advantageously, by mixing the electromagnetic radiation from the semiconductor laser components, electromagnetic radiation can be emitted that has a color point that lies within a color space spanned by the individual colors of the emitted electromagnetic radiation.

[0025] According to at least one embodiment of the optoelectronic arrangement, the differences in the principal wavelengths of the entrance beams of each semiconductor laser device deviate from one another by at least 0.5 nm. Different differences in the principal wavelengths of the entrance beams of a semiconductor laser device can advantageously reduce or avoid undesirable interference effects.

[0026] According to at least one embodiment of the optoelectronic arrangement, at least one incident beam of light strikes the optical element outside of its optical axis. The optical axis of the optical element is preferably an axis of symmetry. A beam of light striking the optical element outside of its optical axis undergoes a change in its direction of propagation compared to a beam of light striking it on the optical axis. This advantageously results in a fanning out of the incident beams of light from a semiconductor laser device.

[0027] According to at least one embodiment of the optoelectronic arrangement, the optical elements are made of the same material and / or have identical geometric dimensions. In particular, the optical elements have the same optical properties, preferably the same refractive index. Specifically, the optical elements have the same refractive index for the respective incident beams passing through them. In other words, the optical elements have identical imaging properties with respect to the imaging of the respective incident beams passing through them. The refractive index of the optical elements is preferably adapted to the principal wavelength of the respective incident beam passing through them such that the optical elements have the same focal length.

[0028] Identical geometric dimensions, as used here and in the following, are to be understood as identical dimensions within the limits of a manufacturing tolerance. By using identical optical elements, a particularly simple superposition of the entrance beams from different semiconductor laser components into common exit beams can be achieved.

[0029] According to at least one embodiment of the optoelectronic arrangement, the optical elements are designed as collimating lenses. In particular, the optical elements are designed as collimating lenses for the incoming beams. For example, the optical elements reduce the divergence of the incoming beams in the fast axis. Collimated incoming beams can be easily and efficiently directed into another optical system, and other application-relevant optics and components can advantageously be designed to be particularly small. This allows the size of the optoelectronic arrangement to be further reduced.

[0030] According to at least one embodiment of the optoelectronic arrangement, the semiconductor laser devices each emit the same number of incident beams. The incident beams of the semiconductor laser devices can be superimposed in the optical superposition element such that each exit beam contains exactly one incident beam from each semiconductor laser device.

[0031] According to at least one embodiment of the optoelectronic arrangement, at least one semiconductor laser device has a constant waveguide spacing. "Constant" here and in the following refers to a spacing that is the same within a manufacturing tolerance. The waveguide spacing is the shortest distance between two adjacent waveguides of a semiconductor laser device. The waveguide spacing, and consequently the distance between the incident beams perpendicular to their emission direction, influences the location where the incident beams strike the associated optical element. This also determines the angle of dispersion by the optical element. Preferably, a semiconductor laser device has a waveguide spacing of the same size between all waveguides.

[0032] According to at least one embodiment of the optoelectronic arrangement, the waveguide spacing of all semiconductor laser components is the same. Equal waveguide spacing for all semiconductor laser components enables particularly simple superposition of the input beams from different semiconductor laser components into common output beams. Together with the use of identically designed optical elements, this allows for particularly simple alignment of the optical arrangement.

[0033] The optoelectronic arrangement described here is particularly suitable for use in so-called "smart eyewear products" that enable augmented reality (AR) or virtual reality (VR) functionality. This optoelectronic arrangement can also be used in various projection systems for displaying image content, for example, in eyeglasses close to the eye or for direct projection of an image onto the human eye.

[0034] Further advantages and beneficial designs and developments of the semiconductor laser component result from the following examples, in connection with the embodiments shown in the figures.

[0035] They show: Fig. 1 a schematic top view of an optoelectronic arrangement described herein according to a first embodiment, Fig. 2 a schematic top view of an optoelectronic arrangement described herein according to a second embodiment, Fig. 3 a schematic top view of an optoelectronic arrangement described herein according to a third embodiment, Fig. 4 a schematic top view of an optoelectronic arrangement described herein according to a fourth embodiment, Fig. 5 a schematic top view of an optoelectronic arrangement described herein according to a fifth embodiment, Fig. 6 a schematic top view of an optoelectronic arrangement described herein according to a sixth embodiment, and Fig. 7 A schematic top view of an optoelectronic arrangement described herein according to a seventh embodiment.

[0036] Identical, similar, or similarly effective elements in the figures are marked with the same reference symbols. The figures and the relative sizes of the elements depicted within them are not to be considered to scale. Rather, individual elements may be exaggerated for clarity and / or to improve representation.

[0037] Fig. Figure 1 shows a schematic top view of an optoelectronic arrangement 1 described herein according to a first embodiment. The optoelectronic arrangement 1 comprises three semiconductor laser devices 10, three optical devices 30 and one optical superposition device 20.

[0038] Each semiconductor laser device 10 comprises three waveguides 110 and is configured to emit three entrance beams R1. For simplified representation, the following are shown in the Fig. 1, Fig. 6 and Fig. Figure 7 shows only one central beam each from the entrance beam bundle R1 and the exit beam bundle R2. Each of these central beams represents a complete set of beams that form a laser beam bundle with a certain dimension and divergence. The waveguides 101 of each semiconductor laser device 10 are arranged parallel to each other at a waveguide spacing W. The waveguide spacings W within the different semiconductor laser devices 10 are the same size within a manufacturing tolerance.

[0039] The semiconductor laser devices 10 are aligned parallel to each other. The entrance beams R1 exit the semiconductor laser devices 10 in a radiation direction Y. One semiconductor laser device 10 is configured to emit electromagnetic radiation in the red spectral region, one semiconductor laser device 10 is configured to emit electromagnetic radiation in the green spectral region, and one semiconductor laser device 10 is configured to emit electromagnetic radiation in the blue spectral region. The principal wavelengths of the entrance beams R1 of the semiconductor laser devices 10 differ by at least ±10 nm, preferably by at least ±20 nm. The principal wavelengths of the entrance beams R1 of the semiconductor laser devices 10 differ by 40 nm to 400 nm.

[0040] The waveguides 110 within a semiconductor laser device 10 are configured to emit electromagnetic radiation with different principal wavelengths. The differences in the principal wavelengths of the entrance beams R1 of each semiconductor laser device 10 deviate from each other by at least 0.5 nm.

[0041] Each semiconductor laser device 10 is associated with one optical element 30. The optical elements 30 are arranged downstream of the semiconductor laser devices 10 in the emission direction. Each optical element 30 has an optical axis 301, which is also an axis of symmetry for that optical element 30. The optical elements 30 are collimating lenses, designed to collimate the fast axis of the entrance beams R1. All optical elements 30 are made of the same material and have the same refractive index. Furthermore, all optical elements 30 have identical geometric dimensions within a manufacturing tolerance.

[0042] The optical superposition element 20 is formed with a radiation-transmitting material and comprises a radiation entrance surface 20A and a radiation exit surface 20B. The optical superposition element 20 has a plurality of reflective surfaces 201, which are configured to reflect and deflect electromagnetic radiation. In particular, some reflective surfaces 201 exhibit a strongly wavelength-dependent reflectivity. For example, some reflective surfaces 201 are formed with dichroic mirrors.

[0043] At least one incident beam R1 of each semiconductor laser element 10 enters the optical element 30 outside the optical axis 301 of its respective associated optical element 30. This causes the incident beams R1 to fan out towards each other after passing through the optical element 30. The incident beams R1 are fanned out such that they enter the optical superposition element 20 at different angles of incidence α. For example, an incident beam R1 that is perpendicular to an exit surface of the semiconductor laser element 10 and parallel to the emission direction Y of the semiconductor laser element 10, and which has passed through the optical element 30 along its optical axis 301, enters the optical superposition element 20 perpendicular to the radiation entry surface 20A.Another entry beam R1 of the same semiconductor laser element 10, which has passed through the optical element 30 outside its optical axis 301, enters the optical superposition element at an entry angle α.

[0044] The optical elements 30 are each arranged at a distance D from the radiation entrance surface 20A of the optical superposition element 20. The distance D of each optical element 30 from the optical superposition element 20 influences a lateral entrance spacing E, which the different entrance beams R1 exhibit relative to each other upon entering the optical superposition element 20 at the radiation entrance surface 20A. The distance D of the individual optical elements 30 thus enables the most precise possible superposition of the entrance beams R1 of all semiconductor laser elements 10 into a single exit beam R2.

[0045] To a good approximation, the distance D can be chosen such that the optical path length of the entrance beams R1 of all semiconductor laser devices 10 from their exit point from the optical element 30 and the radiation exit surface 20B of the optical superposition element 20 is the same. An optical path length is composed of the geometric path length and the refractive index of the materials traversed along the geometric path. In this way, a particularly simple superposition of the entrance beams R1 from different semiconductor laser devices 10 into several exit beams R2 can be advantageously achieved.

[0046] Three beams of light R2 emerge from the radiation output surface 20B of the optical superposition element 20 at an exit distance A from each other. Each beam of light R2 contains an input beam R1 from each of the semiconductor laser devices 10. Each beam of light R2 emerges from the radiation output surface 20B at a different exit point and at an exit angle β. Due to the small exit distance A between the beams of light R2 and the collimation of the beams of light R2, which is still present even after passing through the optical superposition element 30, further downstream optics and components can remain small, and the overall system size can be advantageously kept to a minimum.

[0047] Furthermore, the different exit angles β of the exit beam bundles R2 and the possibility of separately controlling the individual waveguides 110 of each semiconductor laser component 10 allow several pixels to be generated simultaneously via a downstream, movable mirror, which enables a projection with a particularly high resolution and frame rate.

[0048] Assuming a divergence angle of 11.25° in the fast-axis for all semiconductor laser components and a waveguide spacing of 70 µm, the exit distance is also 70 µm.

[0049] In the Fig. For the sake of simplicity, figures 2 to 5 show the incoming beams R1 and the outgoing beams R2 as individual, wider beams. Each beam can also be interpreted as a plurality of incoming beams R1 or outgoing beams R2. Essentially, the second, third, fourth, and fifth embodiments correspond to the one described in the Fig. 1 first embodiment shown.

[0050] Fig. Figure 2 shows a schematic top view of an optoelectronic arrangement 1 according to the second embodiment. In contrast to the first embodiment, the optical superposition element 20 has two radiation entry surfaces 20A. Furthermore, the optical superposition element 20 comprises two reflection surfaces 201 and can thus be manufactured particularly easily. A semiconductor laser component 10 is oriented perpendicular to two other semiconductor laser components 10. Consequently, the emission direction Y of one semiconductor laser component 10 is also oriented perpendicular to the emission direction of two other semiconductor laser components 10.

[0051] Fig. Figure 3 shows a schematic top view of an optoelectronic arrangement 1 according to the third embodiment. In contrast to the first embodiment, the optical superposition element 20 has three reflective surfaces 201.

[0052] Fig. Figure 4 shows a schematic top view of an optoelectronic arrangement 1 according to the fourth embodiment. In contrast to the first embodiment, the optical superposition element 20 has three reflective surfaces 201. The in Fig. The optical superposition element 20 shown in section 4 can be manufactured in a particularly compact form.

[0053] Fig. Figure 5 shows a schematic top view of an optoelectronic arrangement 1 according to the fifth embodiment. In contrast to the first embodiment, the optical superposition element 20 has two radiation entry surfaces 20A. Furthermore, the optical superposition element 20 comprises three reflection surfaces 201 and can thus be manufactured particularly easily. A semiconductor laser component 10 is oriented obliquely relative to two other semiconductor laser components 10. Consequently, the emission direction Y of one semiconductor laser component 10 is also oriented obliquely relative to the emission direction of two other semiconductor laser components 10.

[0054] Fig. Figure 6 shows a schematic top view of an optoelectronic arrangement 1 according to the sixth embodiment. The sixth embodiment essentially corresponds to the one shown in Figure 6. Fig. The first embodiment shown in Figure 1. In contrast to the first embodiment, the optical superposition element 20 has three radiation entry surfaces 20A. Furthermore, the optical superposition element 20 comprises two reflection surfaces 201 and can thus be manufactured particularly easily. The optical superposition element 20 is designed in the shape of a cube and is therefore particularly compact and stable.

[0055] The reflective surfaces 201 are designed as λ / 4 plates and change the polarization of incident electromagnetic radiation.

[0056] Fig. Figure 7 shows a schematic top view of an optoelectronic arrangement 1 according to the seventh embodiment. The seventh embodiment essentially corresponds to the one described in Figure 7. Fig. 1 first embodiment shown. The optical superposition element 20 comprises several reflective surfaces 201 on the radiation entrance surface 20A and on the side of the optical superposition element 20 opposite the radiation entrance surface 20A.

[0057] A superposition of the entrance beams R1 of the semiconductor laser devices 10 into several exit beams R2 with different exit angles β is also possible with optical superposition elements 20, which according to the second, third, fourth, fifth, sixth or seventh embodiment according to the Fig. 2 to 7 are trained. Reference symbol list 1 optoelectronic arrangement 10 Semiconductor laser device 20 optical overlay element 201 reflective surface 20A Radiation entry surface 20B Radiation emission surface 30 optical elements 301 optical axis 101 Ribbed waveguides R1 entrance beam R2 exit beam bundle X lateral direction Y beam direction D distance A Exit distance E Entry distance W waveguide spacing α Angle of entry β Exit angle

Claims

[1] Optoelectronic arrangement (1) with - at least two semiconductor laser devices (10) configured to emit electromagnetic radiation, and - an optical superposition element (20) with at least one radiation entry surface (20A) and one radiation exit surface (20B), wherein - each semiconductor laser component (10) is assigned an optical component (30), - each semiconductor laser device (10) emits a plurality of spatially separated entry beams (R1), - all incoming beams (R1) of a semiconductor laser device (10) pass through the respective associated optical element (30), wherein several incoming beams (R1) emitted by a semiconductor laser device (10) are fanned out against each other after passing through the optical element (30) in such a way that the incoming beams (R1) enter the optical superposition element (20) at different angles of incidence (α), and - Entrance beams (R1) from different semiconductor laser devices (10) exit at the radiation exit surface (20B) of the optical superposition element (20) superimposed in a plurality of exit beams (R2), wherein - the optical elements (30) have a distance (D) from the optical superposition element (20), - the distance (D) of each optical element (30) is set such that the entrance beams (R1) from different semiconductor laser elements (10) exit together in common exit beams (R2) at the radiation exit surface (20B) of the optical superposition element (20). - the exit beams (R2) superimposed at a common point leave the optical superposition element (20) at a common exit angle (β), - each semiconductor laser device (10) comprises a plurality of waveguides (101) each emitting an entrance beam (R1), and - the waveguides (110) of a semiconductor laser device (10) can be controlled independently of each other. [2] Optoelectronic arrangement (1) according to the preceding claim, wherein different entry beams (R1) of a semiconductor laser device (10) have different principal wavelengths. [3] Optoelectronic arrangement (1) according to one of the preceding claims, wherein corresponding entrance beams (R1) of different semiconductor laser devices (10) have different principal wavelengths. [4] Optoelectronic arrangement (1) according to the preceding claim, wherein the principal wavelengths of entrance beams (R1) of different semiconductor laser devices (10) differ by at least 10 nm, preferably by at least 20 nm. [5] Optoelectronic arrangement (1) according to one of the preceding claims, wherein the differences in the principal wavelengths of the entry beams (R1) of each of a semiconductor laser device (10) differ from each other by at least 0.5 nm. [6] Optoelectronic arrangement (1) according to one of the preceding claims, wherein at least one ray of an entrance beam (R1) strikes the optical element (30) outside an optical axis (301) of the optical element (30). [7] Optoelectronic arrangement (1) according to one of the preceding claims, wherein the optical elements (30) are made of the same material and / or have the same geometric dimensions. [8] Optoelectronic arrangement (1) according to one of the preceding claims, wherein the optical elements (30) are designed as collimating lenses. [9] Optoelectronic arrangement (1) according to one of the preceding claims, wherein the semiconductor laser elements (10) emit the same number of entry beams (R1). [10] Optoelectronic arrangement (1) according to one of the preceding claims, wherein at least one semiconductor laser element (10) has a constant waveguide spacing (W). [11] Optoelectronic arrangement (1) according to the preceding claim, wherein the waveguide spacings (W) of all semiconductor laser devices (10) are equal.

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