Optoelectronic lighting device and method

Abstract

The invention relates to an optoelectronic lighting device, comprising a first at least partially transparent embedding layer and at least one at least partially transparent carrier substrate arranged on the first embedding layer, with a structured electrically conductive layer and at least one optoelectronic semiconductor component being arranged on the side of the carrier substrate facing the first embedding layer. The first embedding layer embeds the structured electrically conductive layer and the optoelectronic semiconductor component. In addition, the optoelectronic semiconductor component is designed to emit light through an upper face of the optoelectronic semiconductor component at least in a main emission direction and through a lower face of the optoelectronic semiconductor component in a direction counter to the main emission direction. A substantially light-impermeable region is provided beneath the optoelectronic semiconductor component as viewed in the direction counter to the main emission direction, which region has a size depending on at least two of: - a perpendicular spacing between the lower face of the optoelectronic semiconductor component and the light-impermeable region; - a surface area of the lower face of the optoelectronic semiconductor component; and - a maximum emission angle of the light emitted through the lower face of the optoelectronic semiconductor component.

Description

[0001] OPTOELECTRONIC LIGHTING DEVICE AND METHOD

[0002] This application claims priority from German patent application No. 10 2022 104 459.9 of February 24, 2022, the disclosure of which is hereby incorporated by reference into this application.

[0003] The present invention relates to technologies for displaying information in or on a transparent pane or surface of a vehicle. In particular, the invention relates to a pane, a window, a panoramic roof glazing, a headliner, or another surface of a vehicle, comprising optoelectronic semiconductor components, as well as their cabling and control, for displaying information or symbols on the pane, the window, the panoramic roof glazing, the headliner, or the other surface of the vehicle.

[0004] Although the invention mainly addresses panes, windows, panoramic roof glazing, a headliner and exterior surfaces of a car, it is not limited to this particular type of vehicle, but can alternatively be implemented in other types of vehicles such as trains, buses, trucks, aircraft or ships.

[0005] Furthermore, the subject matter of the present invention can also be used in the field of buildings and houses to display information in or on correspondingly used panes, in particular glass panes.

[0006] BACKGROUND

[0007] The windows of a motor vehicle, especially a car, are usually made of laminated glass. Such laminated glass is used not only for windshields, but also for side windows, rear windows, sunroofs, and panoramic roofs. Laminated glass is manufactured by bonding two or more panes of glass together using a thermoplastic bonding layer. Sometimes, the thermoplastic layer is applied to only one pane.

[0008] LEDs directed toward the interior of a motor vehicle, particularly a car, are used to provide interior lighting or to provide information to the driver or other vehicle occupants. Light sources such as headlights, taillights, high-mounted brake lights, and auxiliary brake lights or turn signals directed outward provide exterior lighting for the vehicle.

[0009] Attempts have been made in the past to integrate LED lighting as an integral part of vehicle components, for example, to provide interior lighting for the vehicle. One approach, for example, involves integrating LEDs into the glazing of a vehicle, specifically into the thermoplastic bonding layer between two panes of glass.

[0010] However, at present there are no known solutions that would allow LEDs to be integrated into vehicle components that appear transparent, such as the windows of a motor vehicle, so that only interior or exterior lighting is provided. For example, when used in the rear window as a brake light, light emitted by the LEDs should, if possible, only be emitted outwards, as light emitted into the vehicle interior can dazzle the driver. Furthermore, according to road traffic regulations, red light may not, for example, be emitted forwards, which is why emission of LEDs into the vehicle interior must be prevented. Similarly, when integrating a transparent display element into the windshield or vehicle side window, it should be avoided that the information displayed on it can be read from outside the vehicle.

[0011] To integrate LEDs into vehicle components that appear transparent, it is advisable to use sapphire chips on LED films with the highest possible transparency (small pads and the smallest possible metallic conductor widths). However, due to the intrinsic radiation behavior of the chips, it is not possible to prevent light from being emitted against the chips' main radiation direction. Currently, there are no known ways to suppress this behavior while retaining the technology-specific advantages (e.g., high transparency). By laminating a fully tinted PVB film, radiation against the main radiation direction can be modified and reduced; however, such a tinted film has a negative impact on the transparency of the application.

[0012] There is a need to counteract the aforementioned problems and to provide a substantially transparent optoelectronic lighting device, for example a window of a vehicle, which comprises optoelectronic semiconductor components and which is simple and inexpensive to manufacture.

[0013] SUMMARY OF THE INVENTION

[0014] This and other needs are met by an optoelectronic lighting device having the features of claim 1 and a method for producing an optoelectronic lighting device having the features of claim 17. Embodiments and developments of the invention are described in the dependent claims. An optoelectronic lighting device according to the invention comprises a first, at least partially transparent, embedding layer. Furthermore, the lighting device comprises at least one at least partially transparent carrier substrate arranged on the first embedding layer, on the side of which substrate facing the first embedding layer, a structured, electrically conductive layer and at least one optoelectronic semiconductor component are arranged.The carrier substrate with the structured electrically conductive layer and the at least one optoelectronic semiconductor component is arranged opposite the first embedding layer in such a way that the first embedding layer embeds the structured electrically conductive layer and the at least one optoelectronic semiconductor component. The at least one optoelectronic semiconductor component is further configured, during intended use, to emit light at least along a main emission direction through a top side of the optoelectronic semiconductor component and in a direction opposite to the main emission direction through a bottom side of the optoelectronic semiconductor component.In addition, viewed in the direction opposite to the main emission direction, at least one substantially opaque, in particular reflective, region is provided below the at least one optoelectronic semiconductor component, which region has a size depending on at least two.

[0015] - a vertical distance between the underside of the optoelectronic semiconductor component and the opaque area;

[0016] - a surface of the underside of the optoelectronic semiconductor component; and

[0017] - a maximum radiation angle of the light emitted by the underside of the optoelectronic semiconductor component.

[0018] According to at least one embodiment, the opaque region is larger than a light cone of light emitted by the underside of the optoelectronic semiconductor component impinging on the opaque region and smaller than twice the impinging light cone. In particular, the opaque region is larger than a projection of a light cone of light emitted by the underside of the optoelectronic semiconductor component impinging on a surface of the opaque region. At the same time, the opaque region is smaller than twice the projection of the light cone impinging on the surface of the opaque region.

[0019] An essential aspect of the invention is to integrate LEDs into a component / layer that appears transparent, such as the windows of a motor vehicle, so that they emit light in only one direction, for example into the interior or exterior of a vehicle. For this purpose, optoelectronic semiconductor components are arranged on an at least partially transparent carrier substrate and electrically contacted by means of a structured, electrically conductive layer. And, viewed in the direction opposite to the main emission direction, an opaque or reflective region is provided below the optoelectronic semiconductor components, which prevents light emission from the component / layer in the direction opposite to the main emission direction.The reflective region is dimensioned and positioned below the optoelectronic semiconductor components such that the component / layer still appears transparent, at least to the human eye of a user of the component (e.g., the driver or passenger of a vehicle). The size of the opaque or reflective region results from at least one of a vertical distance between an underside of the optoelectronic semiconductor component and the opaque region, a surface of the underside of the optoelectronic semiconductor component, and a maximum radiation angle of the light emitted by the underside of the optoelectronic semiconductor component.

[0020] According to at least one embodiment, the structured electrically conductive layer has at least a first region and a second region that is electrically insulated from the first region. The first region is coupled to a first electrical connection surface of the optoelectronic semiconductor component, and the second region is coupled to a second electrical connection surface of the optoelectronic semiconductor component. The structured electrically conductive layer or the first and second regions of the structured electrically conductive layer can serve to supply the at least one optoelectronic semiconductor component with electrical energy and / or a data signal. The structured electrically conductive layer can consist of a conductive material, such as copper, for example.The regions of the structured electrically conductive layer can be coated and / or blackened to reduce the reflectance of the outer surface area of ​​the at least one electrical line. The coating can be, for example, a palladium or molybdenum coating. At least for regions of the structured electrically conductive layer, it may be desirable for them to be particularly reflective.

[0021] According to at least one embodiment, the structured electrically conductive layer comprises a substantially transparent material, such as indium tin oxide (ITO). Such a material can, for example, increase the transparency of the optoelectronic lighting device.

[0022] According to at least one embodiment, the opaque region is formed by a third region of the structured electrically conductive layer that is electrically insulated from the first and second regions. The third region can be a continuous region that is arranged beneath the at least one optoelectronic semiconductor component and that is electrically insulated from the first and second regions.

[0023] According to at least one embodiment, however, the opaque region is formed by a partial region of the second region of the structured electrically conductive layer. The partial region can, for example, be a contiguous region / area arranged beneath the at least one optoelectronic semiconductor component.

[0024] According to at least one embodiment, the first and second regions of the structured electrically conductive layer, and in the case of a third region, also the third region of the structured electrically conductive layer, are separated from one another by an insulating layer. The insulating layer can, for example, be arranged on the second or third region and between the first, second, and third regions.

[0025] According to at least one embodiment, the optoelectronic lighting device further comprises a first conductor track section that connects the first region of the structured electrically conductive layer to the first electrical connection area of ​​the optoelectronic semiconductor component. The first conductor track section is arranged on the insulation layer and extends thereon from the first region of the structured electrically conductive layer to the first electrical connection area of ​​the optoelectronic semiconductor component.

[0026] According to at least one embodiment, the optoelectronic lighting device further comprises a second conductor track section that connects the second region of the structured electrically conductive layer to the second electrical connection area of ​​the optoelectronic semiconductor component. The second conductor track section is arranged on the insulation layer and extends thereon from the second region of the structured electrically conductive layer to the second electrical connection area of ​​the optoelectronic semiconductor component.

[0027] According to at least one embodiment, the optoelectronic lighting device further comprises a second at least partially transparent embedding layer which is arranged on a side of the carrier substrate opposite the optoelectronic semiconductor component.

[0028] In some embodiments, the first and / or second at least partially transparent embedding layer is formed by a melt material layer, an adhesive layer, a hot melt adhesive layer, a resin, such as ethylene vinyl acetate (EVA), polyvinyl butyral (PVB), or by an ionomer-based system. In particular, the first and / or second at least partially transparent embedding layer can comprise or consist of an at least partially transparent plastic, in particular an at least partially transparent film, in particular a flexible film. At least the first at least partially transparent embedding layer can be formed, for example, by a protective varnish that embeds the structured electrically conductive layer and the at least one optoelectronic semiconductor component. In some embodiments, the first and / or second at least partially transparent embedding layer can be blackened.

[0029] In some embodiments, the carrier substrate with the structured electrically conductive layer arranged thereon and the at least one optoelectronic semiconductor component is embedded between the first and second at least partially transparent embedding layers. The first and second at least partially transparent embedding layers can, for example, compensate for a height or topography of the structured electrically conductive layer and the at least one optoelectronic semiconductor component.

[0030] According to at least one embodiment, the opaque region is arranged on a side of the carrier substrate opposite the optoelectronic semiconductor component and is embedded in the second at least partially transparent embedding layer.

[0031] According to at least one embodiment, the opaque region is formed by a material accumulation of an opaque material, for example a reflective and / or light-absorbing material, which is arranged on a side of the carrier substrate opposite the optoelectronic semiconductor component. For example, the opaque region can also be formed by a material accumulation of a reflective material and a light-absorbing material encasing the reflective material. A region of the material accumulation facing the at least one optoelectronic semiconductor component can be designed to be reflective, and lateral regions, as well as a region of the material accumulation facing away from the at least one optoelectronic semiconductor component, can be designed to be light-absorbing, for example.

[0032] In some embodiments, the at least partially transparent carrier substrate comprises at least one of the materials PET, polycarbonate, PMMA, and PEN. In particular, the flexible carrier substrate can comprise a substantially transparent material that additionally has flexible or elastic properties. The term "flexible" can be understood to mean that the carrier substrate is flexible or elastic and can be formed into a desired shape non-destructively and without the application of large forces. In some embodiments, the optoelectronic lighting device comprises a transparent pane arranged on the first embedding layer. The transparent pane can be formed, for example, by a glass pane, but the transparent pane can also be formed from a transparent plastic such as Plexiglas or a transparent film.In some embodiments, the transparent pane is formed by a transparent, flexible film.

[0033] In some embodiments, the optoelectronic lighting device comprises another transparent pane, in particular a glass pane, wherein the first and optional second embedding layers are arranged between the two transparent panes, in particular glass panes. The first and optional second embedding layers can be formed, for example, by a thermoplastic bonding layer laminated between two glass panes. Accordingly, the optoelectronic lighting device can form a laminated glass pane into which a plurality of lighting elements are integrated.

[0034] According to at least one embodiment, the optoelectronic lighting device further comprises an anti-reflective coating arranged on the transparent pane. Anti-reflective coating on the surface of the transparent pane can reduce back reflections inside the optoelectronic lighting device.

[0035] In some embodiments, the at least one optoelectronic semiconductor component is formed by a luminous element or an LED. In some embodiments, the at least one optoelectronic semiconductor component forms a luminous dot, wherein the totality of several such luminous dots can form a luminous symbol or luminous lettering during intended use of the optoelectronic lighting device. However, the luminous dots can also be arranged randomly relative to one another and, for example, form a dot-like pattern. The term luminous dot is not to be understood as a dot-like element, but rather as a region of a defined luminous area predetermined by the size of the semiconductor component.

[0036] In some embodiments, the at least one optoelectronic semiconductor component can be formed by a light-emitting element or an LED that comprises a conversion material. The conversion material can, for example, be arranged over a light-emitting region of the semiconductor component and be configured to convert the light emitted by the semiconductor component into light of a different wavelength.

[0037] In some embodiments, the at least one optoelectronic semiconductor component is formed by an LED, in particular an LED chip. An LED can in particular be referred to as a mini-LED, which is a small LED, for example with edge lengths of less than 200 μm, in particular down to less than 40 μm, in particular in the range from 200 μm to 10 μm. Another range is between 150 μm and 40 μm. At these spatial dimensions, the optoelectronic semiconductor component is virtually invisible to the human eye.

[0038] The LED may also be referred to as a micro-LED, also called a μLED, or a μLED chip, particularly if the edge lengths are in a range of 100 μm to 3 μm. In some embodiments, the LED may have a spatial dimension of 90 x 150 μm or a spatial dimension of 75 x 125 μm.

[0039] The mini-LED or μLED chip may, in some embodiments, be an unpackaged semiconductor chip. Unpackaged may mean that the chip does not have a package around its semiconductor layers, such as a "chip die." In some embodiments, unpackaged may mean that the chip is free of any organic material. Thus, the unpackaged device does not contain any organic compounds containing carbon in covalent bonding.

[0040] In some embodiments, the at least one optoelectronic semiconductor component may comprise a mini-LED or a μLED chip configured to emit light of a selected color. In some embodiments, two or more optoelectronic semiconductor components may form a pixel, such as an RGB pixel comprising three mini-LEDs or μLED chips. An RGB pixel may, for example, emit light in the colors red, green, and blue, as well as any mixed colors. In some embodiments, more than three optoelectronic semiconductor components may also form a pixel, such as an RGBW pixel comprising four mini-LEDs or μLED chips. An RGBW pixel may, for example, emit light in the colors red, green, blue, and white, as well as any mixed colors. For example, white light, or red light, or green light, or blue light in the form of full conversion can be generated using an RGBW pixel.

[0041] In some embodiments, the at least one optoelectronic semiconductor component is assigned to an integrated circuit for controlling the latter. In some embodiments, two or more optoelectronic semiconductor components are assigned to an integrated circuit for controlling the latter. For example, one RGB pixel can be assigned to an integrated circuit (IC). The integrated circuit(s) can be formed, for example, by a particularly small integrated circuit, such as a microintegrated circuit (μIC).

[0042] In some embodiments, a layer with light-scattering particles can be arranged over the at least one optoelectronic semiconductor component or over each pixel. The use of such a layer with the light-scattering particles can, in particular, improve the homogeneous emission of light from the at least one optoelectronic semiconductor component.

[0043] The plurality of optoelectronic semiconductor components can form a luminous symbol or luminous lettering during intended use of the optoelectronic lighting device. In the case of a plurality of optoelectronic semiconductor components, the lighting elements can collectively form a symbol or luminous lettering during intended use of the optoelectronic lighting device, or the lighting elements can form multiple symbols or luminous lettering during intended use of the optoelectronic lighting device.

[0044] The invention also relates to a method for producing an optoelectronic lighting device comprising the steps:

[0045] - Providing a first at least partially transparent embedding layer;

[0046] - Providing an at least partially transparent carrier substrate with - a structured electrically conductive layer and at least one optoelectronic semiconductor component, wherein the at least one optoelectronic semiconductor component is designed to emit light during intended use at least along a main emission direction through a top side of the optoelectronic semiconductor component and in a direction opposite to the main emission direction through a bottom side of the optoelectronic semiconductor component, and - a substantially opaque, in particular reflective, region which, viewed in the direction opposite to the main emission direction, is provided below the at least one optoelectronic semiconductor component,wherein the opaque region has a size dependent on a vertical distance between the underside of the optoelectronic semiconductor component and the opaque region and / or on the size of the underside of the optoelectronic semiconductor component and / or on a maximum radiation angle of the light emitted by the underside of the optoelectronic semiconductor component; and,

[0047] - Arranging the carrier substrate on the first embedding layer such that the structured electrically conductive layer and the at least one optoelectronic semiconductor component are embedded in the first embedding layer.

[0048] In some embodiments, the step of providing the carrier substrate comprises applying the structured electrically conductive layer to the carrier substrate such that the structured electrically conductive layer has at least a first region and a second region electrically insulated from the first region. Furthermore, the step of applying the structured electrically conductive layer may comprise creating a third region of the structured electrically conductive layer that is electrically insulated from the first and second regions, wherein the third region forms the opaque region. Alternatively, however, a partial region of the second region of the structured electrically conductive layer may also form the opaque region.

[0049] In some embodiments, the step of providing the carrier substrate comprises applying an insulating layer to the third region or to the partial region of the second region of the structured electrically conductive layer. A first conductor track section can also be formed on the insulating layer, which is electrically connected to the first region of the structured electrically conductive layer. In addition, a second conductor track section can also be formed on the insulating layer, which is electrically connected to the second region of the structured electrically conductive layer.

[0050] According to at least one embodiment, the step of providing the carrier substrate comprises arranging the at least one optoelectronic semiconductor component on the carrier substrate such that the first region of the structured electrically conductive layer is coupled to a first electrical connection surface of the at least one optoelectronic semiconductor component and the second region of the structured electrically conductive layer is coupled to a second electrical connection surface of the optoelectronic semiconductor component.

[0051] In some embodiments, the step of providing the carrier substrate comprises forming or providing the opaque region on a top side of the carrier substrate opposite the optoelectronic semiconductor component or on another surface located beneath the semiconductor component. The opaque region is formed, in particular, in the form of a material accumulation of a light-absorbing and / or reflective material.

[0052] According to at least one embodiment, the method further comprises applying a second, at least partially transparent, embedding layer to a side of the carrier substrate opposite the first embedding layer, such that the second and first embedding layers cover the carrier substrate and the components and layers arranged thereon. According to at least one embodiment, the method further comprises applying a transparent pane, in particular a glass pane, to the first embedding layer.

[0053] In some embodiments, the method comprises a further step:

[0054] - Arranging a further transparent pane, in particular a glass pane, on the second embedding layer such that the first and the second embedding layer are arranged between the two transparent panes, in particular glass panes.

[0055] In some embodiments, the transparent pane, the first embedding layer, the second embedding layer and the optional further transparent pane are bonded together in a further lamination step, in particular under the influence of pressure and / or temperature.

[0056] The optoelectronic lighting device according to the invention can bring about the following advantages: -light emission only in one direction, so that no light is emitted, for example, into the interior of a vehicle;

[0057] Increased system efficiency, as light initially emitted in the reverse direction is redirected toward the main emission side and can be used; Maintaining the highest possible transparency, as shading / reflection occurs only locally (compared to the state of the art, in which a tinted PVB film is laminated over the entire surface, this represents a significant increase in transparency);

[0058] The integration of such locally structured or locally applied opaque areas is relatively inexpensive; by using anti-reflective glass, disruptive reflections or multiple reflections can be prevented, thereby increasing the brilliance of the display elements.

[0059] Brief description of the drawings

[0060] In the following, embodiments of the invention are explained in more detail with reference to the accompanying drawings. They show, schematically,

[0061] Fig. 1A to 1C show a carrier substrate with an optoelectronic semiconductor component and the structure of a laminated glass pane;

[0062] Figs. 2A and 2B show the structure of an optoelectronic lighting device according to some aspects of the proposed principle;

[0063] Figs. 3A and 3B show the structure of a further embodiment of an optoelectronic lighting device according to some aspects of the proposed principle;

[0064] Fig. 4A to 5B show the structure of further embodiments of an optoelectronic lighting device according to some aspects of the proposed principle;

[0065] Fig. 6 is a sectional view of an optoelectronic lighting device according to some aspects of the proposed principle to clarify the geometric relationships; and Figs. 7 to 9B show the structure of further embodiments of an optoelectronic lighting device according to some aspects of the proposed principle.

[0066] Detailed description

[0067] The following embodiments and examples show various aspects and their combinations according to the proposed principle. The embodiments and examples are not always true to scale. Likewise, various elements may be shown enlarged or reduced in size to emphasize individual aspects. It goes without saying that the individual aspects and features of the embodiments and examples shown in the figures can be easily combined with one another without compromising the inventive principle. Some aspects have a regular structure or shape. It should be noted that in practice, minor deviations from the ideal shape may occur without, however, contradicting the inventive idea.

[0068] Furthermore, the individual figures, features, and aspects are not necessarily depicted in the correct size, nor may the proportions between the individual elements be fundamentally correct. Some aspects and features are emphasized by being shown enlarged. However, terms such as "top," "above," "below," "below," "larger," "smaller," and the like are correctly depicted with reference to the elements in the figures. This makes it possible to infer such relationships between the elements from the illustrations.

[0069] 1A and 1B show two possible arrangements for an optoelectronic semiconductor element 6 on a carrier substrate 4. The main emission direction E1 of the semiconductor component 6 can, as shown in Fig. 1A, run either away from the substrate 4 (chip last) or, as shown in Fig. 1B, through the substrate 4 (chip first). Depending on the design, electrical connection surfaces can be connected directly to a contact structure on the substrate 4, or must be connected to a contact structure on the substrate 4 using, for example, wire bonds. With chip first, the chip is contacted from above using wire bonds; with chip last, the chip is contacted from below by placing the chip on a contact structure.

[0070] Fig. 1C shows the structure of a laminated glass pane with a carrier substrate 4 corresponding to Fig. 1A. The laminated glass pane comprises a first glass pane 2 and a second glass pane 15, as well as a first embedding layer 4 and a second embedding layer 11, which mechanically connect the two glass panes to one another. The carrier substrate 4 with the optoelectronic semiconductor component 6 is arranged between the two embedding layers 3, 11 and embedded therein. The laminated glass pane can be produced, for example, by laminating the two glass panes together using the two embedding layers 3, 11.

[0071] 2A and 2B show the structure of an optoelectronic lighting device 1 according to some aspects of the proposed principle in a side view and a top view. The lighting device 1 comprises an at least partially transparent embedding layer 3 on which an at least partially transparent carrier substrate 4 is arranged. A structured electrically conductive layer 5 and an optoelectronic semiconductor component 6 are arranged on the side of the carrier substrate 4 facing the first embedding layer 3. The first embedding layer 3 embeds the structured electrically conductive layer 5 and the optoelectronic semiconductor component 6.During intended use, the optoelectronic semiconductor component 6 is designed to emit light along a main emission direction E1 through a top side 6a of the optoelectronic semiconductor component 6 and in a direction E2 opposite to the main emission direction through a bottom side 6b of the optoelectronic semiconductor component 6.

[0072] The structured electrically conductive layer 5 is formed such that it has a first region 5a, a second region 5b, and a third region 5c, each of which is electrically insulated from one another. An insulation layer 9 is arranged on the third region 5c or between the first and third regions and the second and third regions. A first conductor track section 10a is arranged on the insulation layer 9 and connects the first region 5a of the structured electrically conductive layer 5 to a first electrical connection area 8a of the optoelectronic semiconductor component 6, and a second conductor track section 10b is arranged on the insulation layer 9 and connects the second region 5b of the structured electrically conductive layer 5 to a second electrical connection area 8b of the optoelectronic semiconductor component 6.

[0073] Viewed in direction E2 opposite to the main emission direction, a substantially opaque, in particular reflective, region 7 is provided below the optoelectronic semiconductor component 6. In the present case, this is formed by the third region of the structured electrically conductive layer 5. This is intended to absorb light emitted by the semiconductor component 6 in direction E2 opposite to the main emission direction or to reflect it in the direction of the main emission direction E1. The opaque region has a size that depends on a vertical distance d between the underside 6b of the optoelectronic semiconductor component 6 and the opaque region 7, the area of ​​the underside 6b of the optoelectronic semiconductor component 6, and the maximum emission angle α of the light emitted by the underside 6 of the optoelectronic semiconductor component 6.

[0074] By adapting such a contact layout for the optoelectronic semiconductor component with a partially larger contact area or a non-current-carrying region, a large portion of the light emitted in the direction E2 opposite to the main emission direction can be absorbed or reflected forward. The novel contact layout is based on a double-layer metallization with a continuous and, in particular, electrically insulated and thus non-current-carrying metallization beneath the optoelectronic semiconductor component 6 (opaque local mirroring). The different metallization levels can be electrically separated from one another using the insulation layer 9.

[0075] The first and second regions 5a, 5b of the structured electrically conductive layer 5 as well as the conductor track sections 10a, 10b can be made thin, so that the transparency of the optoelectronic lighting device 1 is not impaired. The opaque region 7, here in the form of the third region 5c of the structured electrically conductive layer 5, can indeed have a certain size, but due to the local introduction and selected dimensions, it can nevertheless be invisible to an observer of the optoelectronic lighting device 1. The opaque region 7 can, for example, have a diameter or edge length in the range of < 500 μm, < 200 μm, or < 50 μm, depending on the size of the semiconductor component 6.

[0076] 3A and 3B show the structure of an optoelectronic lighting device 1 according to some aspects of the proposed principle in a side view and a top view. The lighting device 1 comprises a transparent pane 2, in particular a glass pane, on which a first at least partially transparent embedding layer 3 is arranged. Furthermore, the lighting device 1 comprises a carrier substrate 4, on the side of which facing the first embedding layer 3, a structured electrically conductive layer 5 and an optoelectronic semiconductor component 6 are arranged. The first embedding layer 3 embeds the structured electrically conductive layer 5 and the optoelectronic semiconductor component 6.

[0077] During intended use, the optoelectronic semiconductor component 6 is designed to emit light along a main emission direction E1 through a top side 6a of the optoelectronic semiconductor component 6 and in a direction E2 opposite to the main emission direction through a bottom side 6b of the optoelectronic semiconductor component 6.

[0078] On the side of the carrier substrate 4 opposite the first embedding layer 3, a second at least partially transparent embedding layer 11 is arranged, which covers the carrier substrate 4, and a further transparent pane 15, in particular a glass pane, is arranged above the second embedding layer 11.

[0079] The composite of the illustrated layers or panes is mechanically connected to one another, for example, by laminating the two transparent panes 2, 15 together using the two embedding layers 3, 11. Alternatively, the composite of the illustrated layers or panes can be glued together.

[0080] The structured electrically conductive layer 5 is formed such that it has a first region 5a, a second region 5b, and a third region 5c, each of which is electrically insulated from one another. An insulation layer 9 is arranged on the third region 5c or between the first and third regions and the second and third regions. A first conductor track section 10a is arranged on the insulation layer 9 and connects the first region 5a of the structured electrically conductive layer 5 to a first electrical connection area 8a of the optoelectronic semiconductor component 6, and a second conductor track section 10b is arranged on the insulation layer 9 and connects the second region 5b of the structured electrically conductive layer 5 to a second electrical connection area 8b of the optoelectronic semiconductor component 6.

[0081] Viewed in direction E2 opposite to the main emission direction, a substantially opaque, in particular reflective, region 7 is provided below the optoelectronic semiconductor component 6. In the present case, this is formed by the third region of the structured electrically conductive layer 5. This is intended to absorb light emitted by the semiconductor component 6 in direction E2 opposite to the main emission direction or to reflect it in the direction of the main emission direction E1. The opaque region has a size that depends on a vertical distance d between the underside 6b of the optoelectronic semiconductor component 6 and the opaque region 7, the area of ​​the underside 6b of the optoelectronic semiconductor component 6, and the maximum emission angle α of the light emitted by the underside 6 of the optoelectronic semiconductor component 6.

[0082] By adapting such a contact layout for the optoelectronic semiconductor component with a partially larger contact area or a non-current-carrying region, a large portion of the light emitted in the direction E2 opposite to the main emission direction can be absorbed or reflected forward. The novel contact layout is based on a double-layer metallization with a continuous and, in particular, electrically insulated and thus non-current-carrying metallization beneath the optoelectronic semiconductor component 6 (opaque local mirroring). The different metallization levels can be electrically separated from one another using the insulation layer 9.

[0083] The first and second regions 5a, 5b of the structured electrically conductive layer 5 as well as the conductor track sections 10a, 10b can be made thin, so that the transparency of the optoelectronic lighting device 1 is not impaired. The opaque region 7, here in the form of the third region 5c of the structured electrically conductive layer 5, can indeed have a certain size, but due to the local introduction and selected dimensions, it can nevertheless be invisible to an observer of the optoelectronic lighting device 1. The opaque region 7 can, for example, have a diameter or edge length in the range of < 500 μm, < 200 μm, or < 50 μm, depending on the size of the semiconductor component 6.

[0084] 4A and 4B show the structure of a further embodiment of an optoelectronic lighting device 1 according to some aspects of the proposed principle in a side view and a top view. In contrast to the embodiment shown in Figs. 3A and 3B, the structured electrically conductive layer 5 does not have a third region selected as the opaque region 7; rather, the second region 5b of the structured electrically conductive layer 5 extends beneath the entire semiconductor component 6, and a partial region of the second region acts as the opaque region 7. The first and second regions 5a, 5b are electrically separated from one another by the insulation layer 9, which is applied in regions to the partial region of the second region 5b.The optoelectronic lighting device 1 also has only a first conductor track section 10a, which is arranged on the insulation layer 9 and connects the first region 5a of the structured electrically conductive layer 5 to a first electrical connection surface 8a of the optoelectronic semiconductor component 6. The second electrical connection surface 8b, however, is electrically connected to the second region 5b via an enlarged solder pad or a raised portion on the second region 5b.

[0085] Figs. 5A and 5B show the structure of another embodiment of an optoelectronic lighting device 1 according to some aspects of the proposed principle in a side view and a top view. In contrast to the embodiment shown in Figs. 3A and 3B, as well as 4A and 4B, the opaque region 7 is not formed by the structured electrically conductive layer 5, but rather by a material accumulation arranged on the back of the carrier substrate 4. The material accumulation is embedded in the second embedding layer 11.

[0086] The accumulation of material can, for example, be a locally printed structured metal layer, or locally printed colored dots, reflectors, lenses or other elements that absorb, reflect or redirect light emitted in the direction E2 opposite to the main radiation direction.

[0087] The material accumulation should be dimensioned such that it is large enough that light emitted in direction E2 opposite to the main emission direction cannot shine laterally past the opaque region 7, while at the same time it should be small enough that the transparency of the optoelectronic lighting device 1 is not significantly impaired. Furthermore, the opaque region 7 should be arranged sufficiently precisely below the semiconductor component 6 so that light emitted in direction E2 opposite to the main emission direction cannot shine laterally past the opaque region 7. Fig. 6 shows a sectional view of an optoelectronic lighting device 1 according to some aspects of the proposed principle to illustrate the geometric relationships regarding the size of the opaque region 7.The figure shows the maximum radiation angle α of light emitted by the underside of the semiconductor component 6, resulting in a correspondingly emitted light cone L. The size of the opaque region 7 results accordingly from the size of the underside 6b of the semiconductor component 6 plus an additional area due to the divergence of the light cone L, which increases with the distance d between the underside 6b of the optoelectronic semiconductor component 6 and the opaque region 7. The additional area can, for example, be ring-shaped or approximately ring-shaped with a width a. The width a can be determined using the trigonometric relationship a = tan(α)*d. As the distance d increases and as the maximum radiation angle α increases (at least between 0° and 90°), the opaque region 7 also increases accordingly.

[0088] It goes without saying that the distance d between the underside 6b of the optoelectronic semiconductor component 6 and the opaque region 7 is kept as small as possible. For example, by forming the opaque region 7 on the same side of the carrier substrate 4 as the semiconductor component 6, or, for example, by making the carrier substrate and any additional layers arranged between the underside 6b of the optoelectronic semiconductor component 6 and the opaque region 7 as thin as possible.

[0089] Fig. 7 shows a further embodiment of an optoelectronic lighting device 1, in which the opaque region 7 is arranged on a further carrier substrate 4b. The two carrier substrates 4a, 4b, together with the first, the second, and a third embedding layer 3, 11, 16, form a composite that is laminated between the two transparent panes 2, 15. Such an arrangement has the advantage that the two substrates 4a, 4b, with the components arranged thereon, can be manufactured separately and subsequently glued together. For example, it is also possible to arrange the opaque region 7 directly on one of the embedding layers, thus eliminating the second carrier substrate 4b.

[0090] In addition, as shown by way of example in the embodiment in Fig. 8, an anti-reflective layer 14 can be arranged on the transparent panes 2. This can reduce back reflections (Fresnel reflections at the interface between glass and air) of the light emitted in the main emission direction, which can arise from the surface of the transparent panes 2. Such anti-reflective layers 14 can alternatively also be laminated between the other layers of the lighting device 1.

[0091] 9a and 9b show the structure of a further embodiment of an optoelectronic lighting device 1 according to some aspects of the proposed principle in a side view and a top view. The opaque region 7 is formed by an accumulation of a reflective material 12 and a light-absorbing material 13 encasing the reflective material. The light-absorbing material can further attenuate or prevent any possible light shining through the opaque region 7. The opaque region 7 can accordingly be implemented, for example, by black dots suppressed by white. Reflection in the direction of the main emission direction E1 is achieved by means of a white material 12, and any light shining through the white material is absorbed by a black casing 13 of the white dot.

[0092] LIST OF REFERENCE SYMBOLS 1 optoelectronic lighting device 2 first glass pane 3 first at least partially transparent embedding layer 4 carrier substrate 5 structured electrically conductive layer 5a first region 5b second region 5c third region 6 optoelectronic semiconductor component 6a top side 6b bottom side 7 opaque region 8a, 8b connection surface 9 insulation layer 10a, 10b conductor track section 11 second at least partially transparent embedding layer 12 reflective material 13 light-absorbing material 14 anti-reflective layer 15 second glass pane 16 third at least partially transparent embedding layer E1 main radiation direction E2 direction opposite to the main radiation direction L light cone d distance a width α radiation angle

Claims

PATENT CLAIMS 1. Optoelectronic luminescent device (1) comprising: a first at least partially transparent embedding layer (3); and at least one at least partially transparent carrier substrate (4) arranged on the first embedding layer (3), on the side of which facing the first embedding layer (3) a structured electrically conductive layer (5) and at least one optoelectronic semiconductor device (6) are arranged; wherein the first embedding layer (3) embeds the structured electrically conductive layer (5) and the at least one optoelectronic semiconductor device (6);wherein the at least one optoelectronic semiconductor device (6) is configured during intended use to emit light at least along a main emission direction (E1) through a top surface (6a) of the optoelectronic semiconductor device (6) and in a direction (E2) opposite to the main emission direction through a bottom surface (6b) of the optoelectronic semiconductor device (6); and wherein, viewed in direction (E2) opposite to the main emission direction, a substantially opaque, in particular reflective, region (7) is provided below the at least one optoelectronic semiconductor device (6), which exhibits a quantity depending on at least two factors; - a perpendicular distance (d) between the underside (6b) of the optoelectronic semiconductor device (6) and the opaque region (7); - a surface of the underside (6b) of the optoelectronic semiconductor device (6); and a maximum radiation angle (α) of the Underside (6b) of the optoelectronic semiconductor component (6) exhibits emitted light.

2. Optoelectronic lighting device according to claim 1 wherein the opaque area (7) is larger than a reflective area (7) on the opaque area (7) Light cone of light emitted through the underside (6b) of the optoelectronic semiconductor device (6) and is smaller than 2 times the incident light cone.

3. Optoelectronic lighting device according to claim 1 or 2, wherein the structured electrically conductive layer (5) has at least a first (5a) and a second area (5b) electrically insulated from the first, wherein the first area (5a) is connected to a first electrical The connection surface (8a) of the optoelectronic semiconductor device (6) and the second area (5b) is coupled to a second electrical connection surface (8b) of the optoelectronic semiconductor device (6).

4. Optoelectronic lighting device according to claim 3 wherein the opaque region (7) is formed by a third region (5c) of the structured electrically conductive layer (5) which is electrically insulated from the first (5a) and second (5b).

5. Optoelectronic lighting device according to claim 3 wherein the opaque region (7) is formed by a part of the second region (5b) of the structured electrically conductive layer (5).

6. Optoelectronic lighting device according to one of claims 3 to 5, wherein the first and the second area (5a, 5b) the structured electrically conductive layer ( 5 ) , as well as the optional third area (5c) of the structured electrically conductive layer (5) are separated from each other by an insulating layer (9).

7. Optoelectronic lighting device according to claim 6, further comprising a first conductive track section (10a) which connects the first region (5a) of the structured electrically conductive layer (5) with the first electrical connection surface (8a) of the optoelectronic semiconductor device (6), and which is located on the insulating layer (9) is ordered.

8. Optoelectronic lighting device according to claim 6 or 7, further comprising a second conductive track section (10b) which connects the second area (5b) of the structured electrically conductive layer (5) with the second electrical contact surface (8b) of the optoelectronic semiconductor device (6) connects, and. which is arranged on the insulation layer (9).

9. Optoelectronic lighting device according to one of the preceding claims, further comprising a second at least partially transparent embedding layer (11) which is embedded on a semiconductor optoelectronic device (6) opposite side of the support substrate (4) is arranged.

10. Optoelectronic lighting device according to claim 9 wherein the opaque area (7) is embedded in the second at least partially transparent embedding layer (11).

11. Optoelectronic lighting device according to one of the preceding claims, wherein the opaque Area (7) is formed by an accumulation of a light-impermeable material, which is arranged on a side of the support substrate (4) opposite the optoelectronic semiconductor device (6).

12. Optoelectronic lighting device according to claim 11, wherein the opaque area (7) is formed by an accumulation of a reflective material (12) and a light-absorbing material (13) enclosing the reflective material.

13. Optoelectronic lighting device according to one of the preceding claims, wherein the carrier substrate (4) comprises at least one of PET, PC, and PEN.

14. Optoelectronic lighting device according to one of the preceding claims, further comprising a transparent disk (2), in particular a glass disk, which is arranged on the first embedding layer (3).

15. Optoelectronic lighting device according to claim 14, further comprising a further transparent disc (15), in particular a glass disc, wherein the first (3) and the optional second embedding layer (11) and the carrier substrate (4) are arranged between the two transparent discs (2, 15), in particular glass discs.

16. Optoelectronic lighting device according to one of the preceding claims, further comprising an anti-reflective layer (14) arranged on the first embedding layer (3) or the transparent disk (2).

17. Method for producing an optoelectronic Lighting device (1) comprising the steps: Providing a first at least partially transparent embedding layer (3); Providing an at least partially transparent support substrate (4) with a structured electrically conductive layer (5) and at least one optoelectronic semiconductor device (6), wherein at least one optoelectronic semiconductor device (6) is configured to emit light during intended use at least along a main emission direction (E1) through a top surface (6a) of the optoelectronic semiconductor device (6) and in a direction (E2) opposite to the main emission direction (E1) through a bottom surface (6b) of the optoelectronic semiconductor device (6), and a substantially opaque, in particular reflective, area (7) which is provided below the at least one optoelectronic semiconductor device (6) in the direction (E2) opposite to the main emission direction.wherein the opaque region (7) has a size that depends on a perpendicular distance (d) between the underside (6b) of the optoelectronic semiconductor device (6) and the opaque region (7) and / or on the size of the underside (6b) of the optoelectronic semiconductor device (6) and / or on a maximum emission angle (α) of the light emitted through the underside (6b) of the optoelectronic semiconductor device (6); and, Arranging the support substrate (4) on the first embedding layer (3) such that the structured electrically conductive layer (5) and the at least one optoelectronic semiconductor device (6) in the first are embedded in the embedding layer (3).

18. Method according to claim 17 1 wherein the step of providing the support substrate (4) is an application of the structured electrically conductive layer (5) onto the Carrier subs trat (4) comprises such that the structured electrically conductive layer (5) has at least a first (5a) and a second region (5b) electrically insulated from the first.

19. Method according to claim 18, wherein the step of applying the structured electrically conductive Layer (5) the generation of a first and second (5a 5b) electrically insulated third region (5c) of the structured electrically conductive layer (5), wherein the third region (5c) forms the opaque region (7).

20. Method according to claim 18, wherein a partial area of ​​the second area (5b) of the structured electrically conductive layer (5) forms the opaque area (7).

21. Method according to claim 19 or 20, wherein the step of The provision of the carrier substrate (4) includes the application of an insulating layer (9) to the third area (5c) or to the sub-area of ​​the second area (5b) of the structured electrically conductive layer (5).

22. Method according to claim 21, wherein the step of providing the carrier substrate (4) is forming a first conductor track section (10a) on the insulation layer. (9) comprises the area that is electrically connected to the first region (5a) of the structured electrically conductive layer (5).

23. Method according to claim 22 wherein the step of providing the support substrate (4) comprises forming a second conductor track section (10b) on the insulating layer (9) which is electrically connected to the second area (5b) of the structured electrically conductive layer (5).

24. Method according to any one of claims 17 to 23, wherein the step of providing the carrier substrate (4) Arranging the at least one optoelectronic semiconductor device (6) on the support substrate (4) comprises such that the first region (5a) of the structured electrically conductive layer (5) is connected to a first electrical contact surface (8a) of the optoelectronic semiconductor device (6) and the second area (5b) of the structured electrically conductive layer (5) is coupled to a second electrical contact surface (8b) of the optoelectronic semiconductor device (6).

25. Method according to any one of claims 17 to 24, wherein the step of providing the carrier substrate (4) Formation of the opaque region (7) on a top surface of the support substrate (4) opposite the optoelectronic semiconductor device (6) is included.

26. Method according to any one of claims 17 to 25, further comprising applying a second at least partially transparent embedding layer (11) to a side opposite the first embedding layer (3) of the support substrate (4) .

27. Method according to any one of claims 17 to 26, further comprehensively an arrangement of a transparent disc (2), in particular a glass pane, on the first embedding layer (3).

28. Method according to claim 27, further comprising arranging a further transparent pane (15), in particular a glass pane, on the second embedding layer (11) such that the first and the second embedding layers (3, 11) are arranged between the two transparent panes (2, 15), in particular glass panes.

29. Method according to one of claims 27 or 28, further comprising a lamination step in which the transparent disc (2) is the first embedding layer (3) which connect the optional second embedding layer (11) and the optional additional transparent disc (15) to each other.