POWER MEASURING DEVICE
The laminated current sensing device addresses the challenge of connecting shunt resistors to vertical structures by providing a simplified structure for accurate voltage sensing and improved heat dissipation, enabling efficient current detection in high-current applications.
Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Applications
- Current Assignee / Owner
- KOA CORP
- Filing Date
- 2024-08-13
- Publication Date
- 2026-06-18
AI Technical Summary
Existing current-measuring shunt resistors are not suitable for handling large currents due to issues with connecting and joining multiple wires, and there is a need for a method to extract voltage signals accurately for high-accuracy current detection in vertical structures like busbars or conductor frames.
A laminated current sensing device with a plate-shaped resistor and conductors, featuring insulating layers and voltage sensing patterns, allows for easy connection to a control circuit and improved heat dissipation, enabling accurate voltage sensing.
The device provides a simplified structure for clamping and connecting shunt resistors to vertical wiring, ensuring high accuracy in current detection and efficient heat dissipation even at high currents.
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Abstract
Description
Technical field
[0001] The present invention relates to a current detection device. State of the art
[0002] As electronic devices have consumed increasingly larger currents in recent years, modules called power modules, which convert and control electrical energy by switching power semiconductors, have been developed on a large scale. Power modules often use substrates with high heat dissipation capable of handling large currents, such as ceramic substrates known as DBC substrates, which are manufactured by a process in which copper is directly bonded to an aluminum oxide substrate. The power modules can also be used with components such as power semiconductors and shunt resistors that are directly mounted on plate-like wiring (busbars or conductor frames) made of copper plates or similar materials. Bibliography Patent literature Patent Literature 1: JP 2001-358283 A Patent Literature 2: JP 2022-066642 A Summary of the invention: Technical problem
[0003] The current-measuring shunt resistor described in patent literature 1 is intended to improve heat dissipation and reliability and shorten wiring, but is not suitable for handling large currents because it requires connecting and joining multiple wires.
[0004] To conduct large currents through such a vertically structured shunt resistor, a surface mounting using an L-shaped electrode element, as described in patent reference 2, was developed. Patent reference 2 describes a method for extracting a voltage signal through wire connection in such a configuration.
[0005] To detect even larger currents, consideration is being given to clamping and connecting a vertical shunt resistor between plate-shaped wiring, such as busbars or conductor frames. In such a case, problems arise regarding a method for extracting the voltage signal and a method for connecting it to a control circuit for detecting current with high accuracy.
[0006] The present invention was developed to solve these problems and aims to provide a configuration for sensing current with higher accuracy when a shunt resistor is arranged and connected between plate-shaped wiring, such as busbars or conductor frames. Solution to the problem
[0007] An example of a current sensing device according to the present invention comprises: a resistor with a laminated structure comprising a plate-shaped first electrode, a plate-shaped second electrode, and a plate-shaped resistive element positioned between the first electrode and the second electrode; and a plate-shaped first conductor and a plate-shaped second conductor, which are connected to the resistor and through which the current to be measured flows.
[0008] The first conductor is connected to the first electrode, the second conductor is connected to the second electrode, The resistor is arranged in a laminated manner between the first conductor and the second conductor, and A first insulating layer and a first voltage sensing pattern for transmitting a voltage signal are provided on a surface of the first conductor, wherein the first voltage sensing pattern is formed by means of the first insulating layer.
[0009] In one example, one end of the first voltage detection pattern is connected to the first conductor.
[0010] In one example, one end of the first voltage sensing pattern is connected to the first electrode.
[0011] In one example, the first conductor further includes a second voltage sensing pattern for transmitting a voltage signal, which is formed by means of the first insulating layer.
[0012] In an example The current sensing device further includes a plate-shaped voltage terminal for sensing voltage, The voltage connection comprises a flat section and a connection section formed by extending a section of a side surface. The flat section of the voltage connection is laminated between the second electrode and the second conductor, and The connecting section is connected to one end of the second voltage sensing pattern.
[0013] In an example The first insulating layer is flexible, The first insulating layer includes an extension section that bends and stretches, One end of the second voltage sensing pattern is located on the extension section of the first insulating layer, and One end of the second voltage detection pattern is connected to the second conductor.
[0014] In an example A through-hole is provided in the first conductor in an area that overlaps with the first electrode when viewed in the stacking direction. The first conductor includes a conductor-connecting section between the through-hole and an end section of the first conductor, and One end of the first voltage detection pattern is connected to the conductor connection section of the first conductor.
[0015] In an example A through-hole is provided in the first conductor in an area that overlaps with the first electrode when viewed in the stacking direction. The first electrode includes an exposed section that lies open in the through-hole, and One end of the first voltage sensing pattern is connected to the exposed section of the first electrode.
[0016] In one example, the first conductor also includes a second insulating layer, The first insulating layer and the first voltage sensing pattern are covered with the second insulating layer, except for a section of the first voltage sensing pattern. The first insulating layer and the second insulating layer have a through-hole connection through which the first conductor extends in a stacking direction, and The first electrode and the first conductor are connected by the via. Advantageous effects of the invention
[0017] The current sensing device according to the present invention has a simplified structure for clamping and connecting a shunt resistor to a vertical structure between plate-shaped wiring, such as busbars or conductor frames, and has a structure for extracting a voltage signal, which enables highly accurate voltage sensing and can be easily connected to a control circuit.
[0018] Furthermore, the current sensing device according to the present invention features improved heat dissipation of the shunt resistor and excellent sensing accuracy even at high currents. Brief description of the drawings Fig. Figure 1 is a perspective view showing a configuration example of a resistor 10 according to embodiment 1 of the present invention. Fig. Figure 2 is a side view showing a configuration example of a current sensing device 100 according to embodiment 1. Fig. Figure 3 is a perspective view of a DBC substrate 20 according to embodiment 1. Fig. Figure 4 is a side view showing a configuration example of a current sensing device 100 according to embodiment 2. Fig. Figure 5 is a perspective view showing a configuration example of the current sensing device 100 according to embodiment 2. Fig. Figure 6 is a bottom view of a busbar 23 according to embodiment 2. Fig. Figure 7 is a perspective view of a Cu terminal 60 according to embodiment 2. Fig. Figure 8 is a side view showing a configuration example of a current sensing device 100 according to embodiment 3. Fig. Figure 9 is a perspective view showing a configuration example of the current sensing device 100 according to embodiment 3. Fig. Figure 10 is a bottom view of a busbar 23 according to embodiment 3. Fig. Figure 11 is a side view showing a configuration example of a current sensing device 100 according to embodiment 4. Fig. Figure 12 is a perspective view showing a configuration example of the current sensing device 100 according to embodiment 4. Fig. 13 is a bottom view of a busbar 23 according to embodiment 4. Fig. Figure 14 is a side view showing a configuration example of a current sensing device 100 according to embodiment 5. Fig. Figure 15 is a sub-view showing a configuration example of the current sensing device 100 according to embodiment 5. Fig. Figure 16 is a side view showing a configuration example of a current sensing device 100 according to embodiment 6. Fig. Figure 17 is a perspective view of a Cu terminal 60 according to embodiment 6. Fig. 18 is a top view of part of Fig. 16. Fig. Figure 19 is a side view showing a configuration example of a current sensing device 100 according to embodiment 7. Fig. 20 is a top view of part of Fig. 19. Fig. Figure 21 is a side view showing a configuration example of the current sensing device 100 according to a modification of embodiment 7. Fig. 22 is a top view of part of Fig. 21. Fig. Figure 23 is a side view showing a configuration example of a current sensing device 100 according to embodiment 8. Fig. 24 is a top view of part of Fig. 23. Description of the embodiments
[0019] In the following, embodiments of the present invention are described with reference to the accompanying drawings. [Version 1]
[0020] Fig. Figure 1 is a perspective view showing a configuration example of a resistor 10 according to embodiment 1 of the present invention. The current sensing device comprises the resistor 10.
[0021] The resistor 10 is a resistor with a laminated structure comprising a plate-shaped first electrode 12, a plate-shaped second electrode 13, and a plate-shaped resistive element 11 located between the first electrode 12 and the second electrode 13. The resistor 10 is, for example, a current-sensing resistor or a shunt resistor. In particular, the resistor 10 can be described as a shunt resistor with a vertical structure. In the example of Fig. 1 the resistance element 11 is formed in a square or rectangular shape, but the shape can be designed arbitrarily.
[0022] The material of the first electrode 12 and the second electrode 13 is, for example, a highly conductive metal such as copper. The material of the resistive element 11 is, for example, a metal suitable for current measurement, based on copper-nickel, copper-manganese, or nickel-chromium alloys, or a metal-containing composite material. The resistor 10 has, for example, dimensions of 5 mm × 5 mm × 0.5 mm (thickness). The thicknesses of the first electrode 12 and the second electrode 13 are, for example, each 0.1 mm. The thickness of the resistive element 11 is, for example, 0.3 mm.
[0023] Fig. Figure 1 shows an example for resistor 10, but other configurations are also possible. For example, the current-sensing resistor disclosed in JP 2018-170478 A can be used.
[0024] Fig. Figure 2 is a side view showing a configuration example of a current sensing device 100. The current sensing device 100 comprises the resistor 10, a DBC substrate 20 (DBC: Direct Bonded Copper), and a busbar 22 (second conductor). Fig. Figure 2 shows only the cross-section of the DBC substrate 20. Fig. Figure 3 is a perspective view of the DBC substrate 20.
[0025] The DBC substrate 20 comprises a copper plate 21 (first conductor). The copper plate 21 is a plate-shaped conductor, and the current to be measured flows through the copper plate 21. The copper plate 21 is connected to the resistor 10 (specifically, the first electrode 12). The thickness of the copper plate 21 is, for example, in the range of 0.3 mm to 2.0 mm at its thinnest point (for example, the part that does not belong to the later in Fig. 2 described via 33).
[0026] The busbar 22 is also a plate-shaped conductor, and the current to be measured flows through the busbar 22. The busbar 22 is connected to the resistor 10 (specifically, the second electrode 13). The resistor 10 is arranged in a laminated form between the copper plate 21 and the busbar 22. The thickness of the busbar 22 is, for example, 0.3 mm or more, and in this specific example, 0.5 mm.
[0027] In the DBC substrate 20, a first insulating layer 31, a second insulating layer 32, and a first voltage sensing pattern 41 are provided on a surface of the copper plate 21. The first insulating layer 31 consists, for example, of silicon nitride, aluminum nitride, aluminum oxide, zirconium oxide, or the like. The thickness of the first insulating layer 31 is, for example, in the range of 0.1 mm to 1 mm, and in a specific example is 0.3 mm. The second insulating layer 32 consists, for example, of solder mask. The thickness of the second insulating layer 32 is, for example, in the range of 10 µm to 50 µm. The first voltage sensing pattern 41 is a pattern for transmitting a voltage signal and is formed on the copper plate 21 by means of the first insulating layer 31. The first voltage sensing pattern 41 consists, for example, of copper foil and has, for example, a thickness of 35 µm.
[0028] The first insulating layer 31 and the second insulating layer 32 have a through-hole 33 through which the copper plate 21 extends in the stacking direction, and the copper plate 21 is exposed at a lower exposed surface 21a between the first insulating layer 31 and the second insulating layer 32. The lower exposed surface 21a is connected to the first electrode 12. In this way, the copper plate 21 and the first electrode 12 are connected via the through-hole 33.
[0029] The first insulating layer 31 and the first voltage sensing pattern 41 are covered by the second insulating layer 32, except for a portion of the first voltage sensing pattern 41. In the example of Fig. 2 and Fig. In Figure 3, the first voltage sensing pattern 41 is exposed at an electrode connection section 41a and a voltage tap section 41b, and the remaining sections are covered with the second insulating layer 32. One end of the first voltage sensing pattern 41, i.e., the electrode connection section 41a, is connected to the top of the first electrode 12.
[0030] In this description, the term "an end" in an example means a section that includes an end in the longitudinal direction. Fig. For example, in Figure 2, the electrode connection section 41a is configured such that it encompasses the end of the first voltage sensing pattern 41 in the longitudinal direction. In one modification, however, the term "an end" may not strictly mean the longitudinal end, but rather an area near the longitudinal end.
[0031] It should be noted that the voltage tap section 41b can be configured so that it does not protrude from the second insulating layer 32 (for example, it can protrude from the opposite end section of the DBC substrate 20, which is in Fig. 2 and Fig. 3 is not shown).
[0032] The connection between the first electrode 12 and the copper plate 21, the connection between the first electrode 12 and the first voltage sensing pattern 41 and the connection between the second electrode 13 and the busbar 22 are made, for example, by soldering or welding, low-temperature sintering or the like.
[0033] In such a configuration, current flows through the thick copper pattern formed by the copper plate 21 on the surface of the DBC substrate 20 into the resistor 10, and voltage can be tapped from the top of the resistor 10 via the first voltage sensing pattern 41 on the back of the DBC substrate 20.
[0034] In Fig. Figure 2 schematically illustrates the connection between the current sensing device 100 and a control circuit 50. The control circuit 50 is connected to the current sensing device 100, for example, via wires 51 and 52. Wires 51 and 52 are, for example, wire connections. In the example of Fig. 2. Wiring 51 connects the voltage tap section 41b of the first voltage sensing pattern 41 to the control circuit 50, and wiring 52 connects the busbar 22 to the control circuit 50. With such a configuration, a voltage signal between the top and bottom of the resistor 10 (i.e., between the first electrode 12 and the second electrode 13) can be supplied to the control circuit 50.
[0035] According to this configuration, the current can be detected with higher accuracy. For example, the sections where wiring 51 and 52 are connected to the current detection device 100 are all designed to have a specific surface area, making it easy to achieve a suitable connection for improved accuracy. [Version 2]
[0036] Fig. 4 and Fig. Figure 5 shows a configuration example of a current sensing device 100 according to embodiment 2. Fig. 4 is a side view and Fig. Figure 5 is a perspective view from the underside. The embodiment 2 is described below, whereby descriptions of parts common to embodiment 1 may be omitted.
[0037] The current sensing device 100 comprises a busbar 23 (first conductor) instead of the DBC substrate 20 of embodiment 1 ( Fig. 2) and a Cu frame 24 (second conductor) instead of the busbar 22 of embodiment 1 ( Fig. 2) The thickness of the Cu frame 24 is, for example, 0.1 mm or more, and in one specific example, 0.5 mm.
[0038] Fig. Figure 6 shows a bottom view of busbar 23. As in Fig. 4, Fig. 5 to Fig. As shown in Figure 6, a surface of the busbar 23 is provided with a first insulating layer 31. The first insulating layer 31 consists, for example, of a material with high heat resistance (polyimide, epoxy resin, etc.). The thickness of the first insulating layer 31 is, for example, in the range of 20 µm to 100 µm.
[0039] The surface of the busbar 23 on the same side as the first insulating layer 31 is provided with a first voltage sensing pattern 41, which is formed by means of the first insulating layer 31. One end of the first voltage sensing pattern 41, namely a busbar connection section 41c, is connected to the busbar 23.
[0040] The surface of the busbar 23 on the same side as the first insulating layer 31 is further provided with a second voltage sensing pattern 42, which is formed by means of the first insulating layer 31. The second voltage sensing pattern 42 is a pattern for transmitting a voltage signal.
[0041] The current detection device 100 further comprises a plate-shaped Cu terminal 60 (voltage connection) for detecting voltage. Fig. Figure 7 shows a perspective view of the Cu clamp 60 from the top. The thickness of the Cu clamp 60 is, for example, in the range of 0.1 mm to 0.3 mm and is 0.1 mm in this specific example.
[0042] The copper terminal 60 comprises a flat section 60a and a connecting section 60b, which is formed by extending a section of a side face. The flat section 60a is laminated between the second electrode 13 of the resistor 10 and the copper frame 24. The connecting section 60b is connected to one end of the second voltage sensing pattern 42, namely the connecting section 42a.
[0043] In this configuration, the first electrode 12 of the resistor 10 is connected to the first voltage sensing pattern 41 via the busbar 23, and the second electrode 13 is connected to the second voltage sensing pattern 42 via the copper terminal 60. Although a control circuit is not specifically shown, the voltage is tapped across the first voltage sensing pattern 41 and the second voltage sensing pattern 42. In this way, the output voltage of the resistor 10 can be supplied to the control circuit with high accuracy. [Version 3]
[0044] In embodiment 3, the first insulating layer of embodiment 2 is designed to be flexible. Embodiment 3 is described below, whereby descriptions of parts common to embodiments 1 or 2 may be omitted.
[0045] Fig. 8 and Fig. Figure 9 shows a configuration example of a current sensing device 100 according to embodiment 3. Fig. Figure 8 is a side view (partially in cross-section) and Fig. Figure 9 is a perspective view seen from the bottom. Fig. 10 is a bottom view of busbar 23.
[0046] The current sensing device 100 comprises an insulating flexible substrate 34 instead of the first insulating layer 31 of embodiment 2 ( Fig. 4, Fig. 5 to Fig. 6) The thickness of the flexible substrate 34, for example, ranges from 20 µm to 80 µm. If the thickness is less than 20 µm, the material is too soft, making the flexible substrate 34 difficult to handle, and if the thickness is 100 µm or more, the flexible substrate 34 is too hard and offers no flexibility.
[0047] As in Fig. As shown in Figure 8, a via 34a is formed in the flexible substrate 34. One end of the first voltage sensing pattern 41 is exposed on the back side of the flexible substrate 34 (i.e., the surface opposite the surface on which the first voltage sensing pattern 41 is provided) and forms a busbar connection section 41c. The busbar connection section 41c is connected to the busbar 23 via the via 34a. This connection is made, for example, by soldering or welding, low-temperature sintering, or the like.
[0048] Even with this configuration, voltage can be tapped via the first voltage sensing pattern 41 and the second voltage sensing pattern 42. [Version 4]
[0049] Embodiment 4 uses a wire connection for connecting the first voltage sensing pattern 41 of embodiment 3. Embodiment 4 is described below, whereby descriptions of parts common to all embodiments 1 to 3 may be omitted.
[0050] Fig. 11 and Fig. Figure 12 shows a configuration example of a current sensing device 100 according to embodiment 4. Fig. 11 is a side view and Fig. Figure 12 is a perspective view seen from the underside. Fig. 13 is a bottom view of busbar 23.
[0051] One end of the first voltage sensing pattern 41, namely a wire connection section 41d, is connected to the busbar 23 by wire connection 53. Examples of the material for the wire connection 53 are Au, Ag, Cu, Al. [Version 5]
[0052] In embodiment 5, the copper clamp 60 from embodiment 3 is omitted, and the flexible substrate 34 is provided with an extension section. Embodiment 5 is described below, whereby descriptions of parts common to all embodiments 1 to 4 may be omitted.
[0053] Fig. 14 and Fig. Figure 15 shows a configuration example of a current sensing device 100 according to embodiment 5. Fig. Figure 14 is a side view (partially in cross-section) and Fig. 15 is a subpage view.
[0054] As described above, the flexible substrate 34 is flexible and includes an extension section 34b that bends and extends. In this embodiment, the extension section 34b extends in one direction from the busbar 23 to the copper frame 24 at an end section of the flexible substrate 34 (for example, an end section of the second voltage sensing pattern 42 in the longitudinal direction). One end of the second voltage sensing pattern 42, namely a copper frame connection section 42b, is arranged on the extension section 34b. The copper frame connection section 42b is connected to the copper frame 24.
[0055] In this way, by extending a section of the flexible substrate 34, the Cu terminal 60 can be omitted and the substrate can be directly connected to the Cu frame 24 (which can be a busbar). [Version 6]
[0056] In embodiment 6, the surface of the busbar 23, on which the flexible substrate 34 is arranged, is positioned opposite that of embodiment 3. Embodiment 6 is described below, whereby descriptions of parts common to all embodiments 1 to 5 may be omitted.
[0057] Fig. Figure 16 is a side view (partially in cross-section) showing a configuration example of a current sensing device 100 according to embodiment 6. Fig. Figure 17 is a perspective view of a Cu terminal 60 seen from the underside. Fig. 18 is a top view of part of Fig. 16.
[0058] In embodiment 3 ( Fig. 8 etc.) the flexible substrate 34 is arranged on the surface of the busbar 23 facing the resistor 10, but in this embodiment the flexible substrate 34 is arranged on the surface of the busbar 23 opposite the resistor 10. Similarly, the first voltage sensing pattern 41 and the second voltage sensing pattern 42 are formed on the surface of the busbar 23 opposite the resistor 10.
[0059] The busbar 23 has a through-hole 23a that penetrates the busbar 23 in the stacking direction. The copper terminal 60 includes an extension section 60c ( Fig. 17), which extends through the through-hole 23a to the other side of the busbar 23 (i.e., to the side comprising the surface on which the second voltage sensing pattern 42 is formed). To avoid a short circuit between the Cu terminal 60 and the busbar 23, it is advantageous for the extension direction of the extension section 60c to be parallel to the stacking direction (i.e., perpendicular to the flat section 60a), and it is preferable for at least the portion of the extension section 60c located within the through-hole 23a to be an insulated section 60d, the perimeter of which is insulated. The insulation is achieved, for example, by coating with epoxy resin or the like.
[0060] The copper terminal 60 is connected at the tip of the extension section 60c, namely the connection section 60b, via solder 70 to the connection section 42a of the second voltage sensing pattern 42. In this configuration, the first electrode 12 of the resistor 10 is connected via the busbar 23 and the busbar connection section 41c ( Fig. 18; similar to in Fig. 8 of embodiment 3 etc.) is connected to the first voltage sensing pattern 41, and the second electrode 13 is connected to the second voltage sensing pattern 42 via the Cu terminal 60 and the solder metal 70.
[0061] With this configuration, the busbar 23 can be mounted in the same direction with respect to the resistor 10, the Cu frame 24 and the Cu terminal 60, which makes the work more efficient. [Version 7]
[0062] In embodiment 7, a through-hole is provided in the busbar 23 of embodiment 6, and a wire connection is used for the connection. Embodiment 7 is described below, whereby descriptions of parts common to all embodiments 1 to 6 may be omitted.
[0063] Fig. Figure 19 is a side view (partially in cross-section) showing a configuration example of a current sensing device 100 according to embodiment 7. Fig. 20 is a top view of part of Fig. 19.
[0064] The busbar 23 is provided with a through-hole 23a. The through-hole 23a in the busbar 23 is located in an area that overlaps with the first electrode 12 when viewed in the stacking direction. The first electrode 12 comprises an exposed section 12a that is exposed in the through-hole 23a. The connection between the busbar 23 and the resistor 10 (in particular the first electrode 12) can be made by soldering, low-temperature sintering, or the like; however, a connection by ultrasonic welding is preferred.
[0065] In the busbar 23, a conductor connection section 23b is provided between the through-hole 23a and the end section of the busbar 23. One end of the first voltage sensing pattern 41, namely the wire connection section 41d, is connected to the conductor connection section 23b of the busbar 23 via a wire connection 54. That is, the wire connection 54 connects the wire connection section 41d and the conductor connection section 23b while extending through the through-hole 23a.
[0066] At the end section of the busbar 23, the copper terminal 60 extends longer than the busbar 23, and a longitudinally extending extension section 60c is arranged at a position beyond the end of the busbar 23 (as shown for the copper terminal 60). Fig. 20 only the extension section 60c). The connection section 42a of the second voltage sensing pattern 42 and the extension section 60c are connected via a wire connection 55.
[0067] By controlling the positional relationship between the through hole 23a formed in the busbar 23, the resistor 10 and the wire connection 54, it is possible to adjust the temperature coefficient of the resistor (TCR) of the current sensing device 100.
[0068] Fig. Figure 21 is a side view (partially in cross-section) showing a configuration example of a current sensing device 100 according to a modification of embodiment 7. Fig. 22 is a top view of part of Fig. 21.
[0069] In this modification, a wire connection 56 is provided instead of the wire connection 54 of embodiment 7. The wire connection 56 is connected to the exposed section 12a of the first electrode 12, not to the busbar 23. In this way, one end of the first voltage sensing pattern 41, namely the wire connection section 41d, and the exposed section 12a of the first electrode 12 are connected via the wire connection 56.
[0070] By controlling the positional relationship between the through hole 23a formed in the busbar 23, the resistor 10 and the wire connection 56, it is possible to adjust the temperature coefficient of the resistor (TCR) of the current sensing device 100. [Version 8]
[0071] In embodiment 8, as in embodiment 5, the copper clamp 60 is omitted, and the flexible substrate 34 is provided with an extension section 34b in embodiment 6 or 7. Embodiment 8 is described below, whereby descriptions of parts common to all embodiments 1 to 7 may be omitted.
[0072] Fig. Figure 23 is a side view (partially in cross-section) showing a configuration example of a current sensing device 100 according to embodiment 8. Fig. 24 is a top view of part of Fig. 23.
[0073] In this embodiment, the extension section 34b extends in one direction from the busbar 23 to the Cu frame 24 at an end section of the flexible substrate 34 (for example, an end section of the second voltage sensing pattern 42 in the longitudinal direction).
[0074] The extension section 34b has a via 34c, which is formed in the stacking direction of the extension section 34b. One end of the second voltage sensing pattern 42, namely the Cu frame connection section 42b, is connected to the top of the Cu frame 24 via the via 34c.
[0075] In this way, by extending a section of the flexible substrate 34, the Cu terminal 60 can be omitted and the substrate can be directly connected to the Cu frame 24 (which can be a busbar). Reference symbol list 10 Resistance 11 Resistance element 12 first electrode 12a exposed section 13 second electrode 20 DBC substrate 21 copper plates 21a lower exposed surface 22, 23 busbar 23a Through hole 23b Conductor connection section 24 copper frames 31 first insulating layer 32 second insulating layer 33 Through-hole plating 34 flexible substrate (first insulating layer) 34a Through-hole plating 34b Extension section 34c via 41 first voltage detection pattern 41a Electrode connection section 41b Voltage tap section 41c Busbar connection section 41d wire connection section 42 second voltage detection pattern 42a Connection section 42b Cu frame connection section 50 Control circuit 51 Wiring 52 Wiring 53, 54, 55, 56 Wire connection 60 Cu terminal (voltage connection) 60a flat section 60b Connection section 60c extension section 60d isolated section 100 current detection device QUOTES INCLUDED IN THE DESCRIPTION
[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature
[0000] JP 2001-358283 A
[0002] JP 2022-066642 A
[0002] JP 2018-170478 A
[0023]
Claims
Current sensing device comprising: a resistor with a laminated structure comprising a plate-shaped first electrode, a plate-shaped second electrode, and a plate-shaped resistive element arranged between the first electrode and the second electrode; and a plate-shaped first conductor and a plate-shaped second conductor connected to the resistor and through which the current to be measured flows; wherein the first conductor is connected to the first electrode, the second conductor is connected to the second electrode, the resistor is arranged in a laminated manner between the first conductor and the second conductor, and a first insulating layer and a first voltage sensing pattern for transmitting a voltage signal on a surface of the first conductor are provided, the first voltage sensing pattern being formed by means of the first insulating layer. Current sensing device according to claim 1, wherein one end of the first voltage sensing pattern is connected to the first conductor. Current sensing device according to claim 1, wherein one end of the first voltage sensing pattern is connected to the first electrode. Current sensing device according to claim 2 or 3, wherein the first conductor further comprises a second voltage sensing pattern for transmitting a voltage signal formed by means of the first insulating layer. Current sensing device according to claim 4, wherein the current sensing device further comprises a plate-shaped voltage terminal for sensing voltage, the voltage terminal comprising a flat section and a connection section formed by extending a section of a side surface, the flat section of the voltage terminal being laminated between the second electrode and the second conductor, and the connection section being connected to an end of the second voltage sensing pattern. Current sensing device according to claim 4, wherein the first insulating layer is flexible, the first insulating layer has an extension section which bends and extends, one end of the second voltage sensing pattern is arranged on the extension section of the first insulating layer, and one end of the second voltage sensing pattern is connected to the second conductor. Current sensing device according to claim 2, wherein a through-hole is provided in the first conductor in an area which, viewed in the stacking direction, overlaps with the first electrode, a conductor-connecting section is provided in the first conductor between the through-hole and an end section of the first conductor, and an end of the first voltage sensing pattern is connected to the conductor-connecting section of the first conductor. Current sensing device according to claim 3, wherein the first conductor has a through-hole in an area which, viewed in the stacking direction, overlaps with the first electrode, the first electrode has an exposed section which is exposed in the through-hole, and an end of the first voltage sensing pattern is connected to the exposed section of the first electrode. Current sensing device according to claim 3, wherein the first conductor further comprises a second insulating layer, the first insulating layer and the first voltage sensing pattern are covered with the second insulating layer except for a section of the first voltage sensing pattern, the first insulating layer and the second insulating layer have a via through which the first conductor extends in a stacking direction, and the first electrode and the first conductor are connected by the via.