Display device

Abstract

Display device 1000 comprising substrate 110 further comprising display area AA and non-display area NA outside the display area. Sensor portion AA1 has transmissive area TA at the display area. First

Claims

1. A display device, comprising:a substrate comprising a display area and a non-display area outside the display area;a sensor portion having a transmissive area at the display area;a plurality of first transistors provided in the display area on the substrate and each comprising a respective oxide semiconductor layer; anda hydrogen capture pattern located in the transmissive area and disposed planarly adjacent to the oxide semiconductor layer of at least one of the plurality of first transistors.

2. The display device according to claim 1, wherein the hydrogen capture pattern comprises a conductive oxide.

3. The display device according to claim 1, wherein the hydrogen capture pattern comprises a conductive oxide containing indium.

4. The display device according to any preceding claim, wherein the hydrogen capture pattern comprises a material having transmittance of light at an infrared wavelength range.

5. The display device according to any preceding claim, wherein the hydrogen capture pattern is located at a same layer as the oxide semiconductor layer of the at least one of the plurality of first transistors.

6. The display device according to any preceding claim, wherein the hydrogen capture pattern has higher hydrogen capture capability than the oxide semiconductor layers of the plurality of first transistors.

7. The display device according to any preceding claim, further comprising a sensor located below the substrate, wherein the hydrogen capture pattern overlaps the sensor.

8. The display device according to any preceding claim, further comprising a polycrystalline silicon layer between the substrate and the oxide semiconductor layers, wherein at least one inorganic insulating film is disposed between the oxide semiconductor layers and the polycrystalline silicon layer.

9. The display device according to claim 8, wherein at least a portion of the polycrystalline silicon layer overlaps the hydrogen capture pattern.

10. The display device according to any preceding claim, wherein the oxide semiconductor layer of the at least one of the plurality of first transistors comprises a respective first active layer and a respective second active layer having different carrier mobilities.

11. The display device according to any of claims 1-7, further comprising a second transistor comprising a polycrystalline silicon layer between the substrate and the oxide semiconductor layers of the plurality of first transistors corresponding to the display area.

12. The display device according to claim 11, wherein:the display area comprises a first area where the sensor portion is disposed and a second area where the sensor portion is not disposed,the first area of the substrate comprises the transmissive area and a plurality of first emissive portions,the second area of the substrate comprises a plurality of second emissive portions, andat the first area, electrodes of the plurality of first transistors and the second transistor do not overlap the transmissive area.

13. The display device according to claim 12, wherein, atthe first area, the hydrogen capture pattern is disposed between oxide semiconductor layers of adjacent first transistors of the plurality of first transistors.

14. The display device according to claim 12 or claim 13, wherein a density of the plurality of first transistors at the first area is less than a density of transistors comprising an oxide semiconductor layer at the second area.

15. The display device according to any of claims 12-14, wherein each of the plurality of first emissive portions and the plurality of second emissive portions is connected to any one of the first transistors.

16. The display device according to any preceding claim, wherein the hydrogen capture pattern is divided into multiple pieces at the transmissive area, and a width of each of the divided hydrogen capture pattern pieces is greater than a spacing between adjacent hydrogen capture pattern pieces.

17. The display device according to any of claims 1-10, further comprising a second transistor comprising a polycrystalline silicon layer between the substrate and the oxide semiconductor layer of the at least one of the plurality 65of first transistors at the non-display area of the substrate, and a third transistor comprising an active layer disposed on a same layer as the oxide semiconductor layer of the at least one of the plurality of first transistors.

18. The display device according to claim 17, wherein carrier mobility of the oxide semiconductor layer of the at least one of the plurality of first transistors is different from carrier mobility of the active layer of the third transistor19. The display device according to any of claims 12-15, further comprising a planarization film over the plurality of first transistors and the hydrogen capture pattern,wherein each of the first emissive portions and the second emissive portions comprises a light emitting device on the planarization film, the light emitting device comprising an anode, an intermediate layer, and a cathode, andwherein any one of the plurality of first transistors and the anode are connected through a contact hole in the planarization film.A

Images