Display device, manufacturing method for display device, display module, and electronic apparatus

Abstract

To provide a display device that can capture images with high sensitivity.SOLUTION: A display device includes a light-emitting element including a light-emitting layer, and a light-receiving element including a photoelectric conversion layer. On the light-emitting layer, a semi-transparent semi-reflective electrode is provided and on the photoelectric conversion layer, a transparent electrode is provided. By a structure in which the semi-transparent semi-reflective electrode does not overlap with the photoelectric conversion layer, the decrease in light-receiving sensitivity of the light-receiving element can be prevented while the light-emitting element employs a microcavity structure. Thus, the display device can capture images with high sensitivity while emitting light with high color purity.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device. One aspect of the present invention relates to an imaging device. One aspect of the present invention relates to a display device having an imaging function. One aspect of the present invention relates to a display module. One aspect of the present invention relates to an electronic device.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention disclosed herein include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, methods for driving them, or methods for manufacturing them. A semiconductor device refers to any device that can function by utilizing semiconductor properties. [Background technology]

[0003] In recent years, display devices have been required to be highly detailed in order to display high-resolution images. Furthermore, in information terminal devices such as smartphones, tablet devices, and notebook PCs (personal computers), display devices are required to be not only highly detailed but also to be low power-efficient. In addition, there is a demand for display devices that not only display images but also have various additional functions, such as touch panel functionality and fingerprint imaging for authentication.

[0004] As a display device, for example, a light-emitting device having a light-emitting element has been developed. Light-emitting elements (also referred to as EL elements) that utilize the electroluminescence (EL) phenomenon have features such as being easy to make thin and light, being able to respond quickly to input signals, and being able to be driven using a DC constant voltage power supply, and are being applied to display devices. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied. [Prior art documents] [Patent Documents]

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] One aspect of the present invention is to provide a display device or an imaging device capable of performing imaging with high sensitivity. Or, one aspect of the present invention is to provide a high-definition display device or an imaging device. Or, one aspect of the present invention is to provide a display device or an imaging device with a high aperture ratio. Or, one aspect of the present invention is to provide a display device capable of performing a display with high color purity. Or, one aspect of the present invention is to provide a display device with high display quality. Or, one aspect of the present invention is to provide a display device capable of acquiring biometric information such as fingerprints. Or, one aspect of the present invention is to provide a display device that functions as a touch panel. Or, one aspect of the present invention is to provide a highly reliable display device or an imaging device. Or, one aspect of the present invention is to provide a display device or an imaging device having a novel configuration. Or, one aspect of the present invention is to provide an electronic device having the above display device or imaging device. Or, one aspect of the present invention is to provide a method for manufacturing the above display device, imaging device, or electronic device.

[0007] Note that the description of these problems does not prevent the existence of other problems. Note that one aspect of the present invention does not necessarily have to solve all of these problems. Note that other problems can be extracted from the descriptions in the specification, drawings, claims, etc.

Means for Solving the Problems

[0008] One aspect of the present invention has a first light-emitting layer, a photoelectric conversion layer, a first electrode, and a second electrode. The first electrode is provided on the first light-emitting layer, the second electrode is provided on the photoelectric conversion layer, and the visible light transmittance of the second electrode is higher than that of the first electrode. This is a display device.

[0009] Alternatively, in the above aspect, the first electrode may be a semi-transmissive / semi-reflective electrode, and the second electrode may be a transparent electrode.

[0010] Alternatively, in the above aspect, an optical adjustment layer may be provided under the first light-emitting layer.

[0011] Alternatively, in the above aspect, the photoelectric conversion layer may have a region that does not overlap with the first electrode.

[0012] Alternatively, in the above aspect, the photoelectric conversion layer may not have a region that overlaps with the first electrode.

[0013] Alternatively, in the above aspect, the second electrode may have a region that overlaps with the first light-emitting layer, and the second electrode may have a region that contacts the first electrode.

[0014] Alternatively, in the above aspect, it may have a resin layer, and the resin layer may be located between the first light-emitting layer and the photoelectric conversion layer.

[0015] Alternatively, in the above aspect, it may have an insulating layer, and the insulating layer may be located between the first light-emitting layer and the resin layer, and between the photoelectric conversion layer and the resin layer.

[0016] Alternatively, in the above aspect, it may have a second light-emitting layer, and the first electrode may be provided on the second light-emitting layer.

[0017] Alternatively, in the above aspect, it may have an organic layer, and the organic layer is located between the first light-emitting layer and the second light-emitting layer and the first electrode, and the organic layer may have at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, or an electron injection layer.

[0018] Alternatively, in the above embodiment, the organic layer may be located between the photoelectric conversion layer and the second electrode.

[0019] Alternatively, in the above embodiment, a protective layer may be provided on the first electrode and on the second electrode.

[0020] A display module having a display device according to one aspect of the present invention and at least one of a connector and an integrated circuit is also an aspect of the present invention.

[0021] An electronic device having a display module according to one aspect of the present invention and at least one of a battery, a camera, a speaker, and a microphone is also according to one aspect of the present invention.

[0022] Alternatively, one aspect of the present invention is a method for manufacturing a display device in which a light-emitting layer and a photoelectric conversion layer are formed, a first electrode is formed on the light-emitting layer, and a second electrode having a higher visible light transmittance than the first electrode is formed on the photoelectric conversion layer.

[0023] Alternatively, one aspect of the present invention is a method for manufacturing a display device, comprising: sequentially forming an emissive film and a first sacrificial film on an insulating surface; processing the first sacrificial film and the emissive film to form a first sacrificial layer and an emissive layer beneath the first sacrificial layer; forming a photoelectric conversion film and a second sacrificial film on the first sacrificial layer and on the insulating surface, respectively; processing the second sacrificial film and the photoelectric conversion film to form a second sacrificial layer and a photoelectric conversion layer beneath the second sacrificial layer; removing the first and second sacrificial layers; forming a first electrode on the emissive layer; and forming a second electrode on the photoelectric conversion layer having a higher visible light transmittance than the first electrode.

[0024] Alternatively, in the above embodiment, before removing the first sacrificial layer and the second sacrificial layer, an insulating film may be formed on the first sacrificial layer, the second sacrificial layer, and the insulating surface, and the insulating film may be processed to form an insulating layer between the light-emitting layer and the photoelectric conversion layer.

[0025] Alternatively, in the above embodiment, the insulating film may be formed using a spin coating method, a spray method, a screen printing method, or a paint method.

[0026] Alternatively, in the above embodiment, the first electrode may be formed by depositing a semi-transparent / semi-reflective film on the light-emitting layer, and the second electrode may be formed by depositing a transparent film on the photoelectric conversion layer.

[0027] Alternatively, in the above embodiment, an optical adjustment layer may be formed on the insulating surface before forming the light-emitting layer, and the light-emitting layer may be formed on the optical adjustment layer.

[0028] Alternatively, in the above embodiment, the first electrode may be formed to have a region that does not overlap with the photoelectric conversion layer.

[0029] Alternatively, in the above embodiment, the first electrode may be formed such that it does not have a region that overlaps with the photoelectric conversion layer.

[0030] Alternatively, in the above embodiment, the second electrode may be formed to have a region that overlaps with the light-emitting layer and a region that is in contact with the first electrode. [Effects of the Invention]

[0031] According to one aspect of the present invention, a display device or imaging device capable of imaging with high sensitivity can be provided. Alternatively, according to one aspect of the present invention, a high-definition display device or imaging device can be provided. Alternatively, according to one aspect of the present invention, a display device or imaging device with a high aperture ratio can be provided. Alternatively, according to one aspect of the present invention, a display device capable of displaying with high color purity can be provided. Alternatively, according to one aspect of the present invention, a display device with high display quality can be provided. Alternatively, according to one aspect of the present invention, a display device capable of acquiring biological information such as fingerprints can be provided. Alternatively, according to one aspect of the present invention, a display device that functions as a touch panel can be provided. Alternatively, according to one aspect of the present invention, a highly reliable display device or imaging device can be provided. Alternatively, according to one aspect of the present invention, a display device or imaging device having a novel configuration can be provided. Alternatively, according to one aspect of the present invention, an electronic device having the above-mentioned display device or imaging device can be provided. Alternatively, according to one aspect of the present invention, a method for manufacturing the above-mentioned display device, imaging device, or electronic device can be provided.

[0032] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from the description in the specification, drawings, claims, etc. [Brief explanation of the drawing]

[0033] [Figure 1] Figure 1 is a top view showing an example of the configuration of a display device. [Figure 2] Figures 2(A) to 2(D) are cross-sectional views showing examples of the configuration of a display device. [Figure 3] Figures 3(A) to 3(E) are cross-sectional views showing examples of the configuration of a display device. [Figure 4] Figures 4(A) to 4(E) are cross-sectional views showing examples of the configuration of a display device. [Figure 5] Figures 5(A) to 5(E) are cross-sectional views showing examples of the configuration of a display device. [Figure 6] Figures 6(A) to 6(L) are cross-sectional views showing examples of the configuration of a display device. [Figure 7] Figures 7(A) to 7(H) are cross-sectional views showing examples of the configuration of a display device. [Figure 8] Figures 8(A) to 8(D) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 9] Figures 9(A) to 9(C) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 10] Figures 10(A) to 10(C) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 11] Figures 11(A) to 11(C) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 12] Figures 12(A) to 12(D) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 13] Figures 13(A) to 13(C) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 14] Figures 14(A) and 14(B) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 15] Figures 15(A) to 15(D) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 16] Figures 16(A) to 16(D) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 17] Figures 17(A) to 17(D) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 18] Figures 18(A) to 18(C) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 19] Figures 19(A) to 19(D) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 20] Figures 20(A) to 20(C) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 21] Figures 21(A) to 21(D) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 22]Figures 22(A) and 22(B) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 23] Figures 23(A), 23(B1), and 23(B2) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 24] Figures 24(A) to 24(C) are cross-sectional views showing examples of the configuration of a display device. [Figure 25] Figures 25(A) to 25(C) are cross-sectional views showing examples of the configuration of a display device. [Figure 26] Figures 26(A) to 26(C) are cross-sectional views showing examples of the configuration of a display device. [Figure 27] Figures 27(A) to 27(D) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 28] Figures 28(A) and 28(B) are cross-sectional views showing examples of methods for manufacturing a display device. [Figure 29] Figure 29 is a perspective view showing an example of a display device configuration. [Figure 30] Figure 30(A) is a cross-sectional view showing an example of the configuration of a display device. Figures 30(B) and 30(C) are cross-sectional views showing an example of the configuration of a transistor. [Figure 31] Figure 31 is a cross-sectional view showing an example of the configuration of a display device. [Figure 32] Figures 32(A) and 32(B1) to 32(B4) are cross-sectional views showing examples of the configuration of a display device. [Figure 33] Figures 33(A) and 33(B) are perspective views showing examples of the configuration of a display device. [Figure 34] Figure 34 is a cross-sectional view showing an example of the configuration of a display device. [Figure 35] Figure 35 is a cross-sectional view showing an example of the configuration of a display device. [Figure 36] Figure 36 is a cross-sectional view showing an example of the configuration of a display device. [Figure 37] Figure 37 is a cross-sectional view showing an example of the configuration of a display device. [Figure 38] Figure 38 is a cross-sectional view showing an example of the configuration of a display device. [Figure 39]Figure 39 is a cross-sectional view showing an example of the configuration of a display device. [Figure 40] Figures 40(A) and 40(B) are top views showing examples of the configuration of a display device. [Figure 41] Figures 41(A) and 41(B) are top views showing examples of the configuration of a display device. [Figure 42] Figure 42 is a top view showing an example of a display device configuration. [Figure 43] Figures 43(A), 43(B), and 43(D) are cross-sectional views showing examples of display devices. Figures 43(C) and 43(E) are diagrams showing examples of images. Figures 43(F) through 43(H) are top views showing examples of pixels. [Figure 44] Figure 44(A) is a cross-sectional view showing an example of the configuration of a display device. Figures 44(B) to 44(D) are top views showing examples of pixels. [Figure 45] Figure 45(A) is a cross-sectional view showing an example of the configuration of a display device. Figures 45(B) to 45(I) are top views showing an example of a pixel. [Figure 46] Figures 46(A) and 46(B) show examples of the configuration of a display device. [Figure 47] Figures 47(A) to 47(G) show examples of the configuration of a display device. [Figure 48] Figures 48(A) through 48(F) show examples of pixels. Figures 48(G) and 48(H) show examples of pixel circuit diagrams. [Figure 49] Figures 49(A) through 49(J) show examples of the configuration of a display device. [Figure 50] Figures 50(A) and 50(B) show examples of electronic devices. [Figure 51] Figures 51(A) to 51(D) show examples of electronic devices. [Figure 52] Figures 52(A) to 52(F) show examples of electronic devices. [Figure 53] Figures 53(A) through 53(F) show examples of electronic devices. [Modes for carrying out the invention]

[0034] The embodiments will be described below with reference to the drawings. However, it will be readily apparent to those skilled in the art that the embodiments can be implemented in many different ways, and their form and details can be modified in various ways without departing from the spirit and scope thereof. Accordingly, the present invention shall not be construed as being limited to the contents of the following embodiments.

[0035] In the invention described below, the same reference numerals are used in common across different drawings for identical parts or parts having similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the same hatching pattern may be used, and reference numerals may not be assigned.

[0036] In the figures described herein, the size of each component, the thickness of the layers, or the area may be exaggerated for clarity. Therefore, the scale is not necessarily limited to those figures.

[0037] Furthermore, the ordinal numbers such as "the first" and "the second" used in this specification are added to avoid confusion of constituent elements and do not imply any numerical limitation.

[0038] In the following, expressions indicating direction, such as "up" and "down," will generally be used in accordance with the orientation shown in the drawings. However, for the purpose of simplifying explanations, the direction referred to as "up" or "down" in the specification may not always coincide with that of the drawings. For example, when explaining the stacking order (or formation order) of a laminate, even if the side on which the laminate is provided (the surface to be formed, the support surface, the adhesive surface, or the flat surface, etc.) is located above the laminate in the drawing, that direction may be expressed as "down," and the opposite direction as "up."

[0039] Furthermore, in this specification, the terms "film" and "layer" may be interchangeable depending on the circumstances. For example, the terms "conductive layer" or "insulating layer" may be interchangeable with the terms "conductive film" or "insulating film."

[0040] In this specification, the term "EL layer" refers to a layer provided between a pair of electrodes of a light-emitting element and containing at least a light-emitting substance (also called a light-emitting layer), or a laminate including a light-emitting layer. The term "PD layer" refers to a layer provided between a pair of electrodes of a photodetector and containing at least a photoelectric conversion material (also called an active layer or photoelectric conversion layer), or a laminate including an active layer.

[0041] In this specification, a display panel, which is one form of a display device, has the function of displaying (outputting), for example, an image on its display surface. Therefore, a display panel is one form of an output device.

[0042] Furthermore, in this specification, a display panel on which a connector such as an FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package) is attached, or on which an IC is mounted on the board using a COG (Chip On Glass) method, may be referred to as a display panel module, a display module, or simply a display panel, etc.

[0043] (Embodiment 1) This embodiment describes an example of the configuration of a display device according to one aspect of the present invention, and an example of a method for manufacturing the display device.

[0044] One aspect of the present invention is a display device having a light-emitting element (also called a light-emitting device) and a light-receiving element (also called a light-receiving device). The light-emitting element has a pair of electrodes and an EL layer between them that includes at least a light-emitting layer. The light-receiving element has a pair of electrodes and a PD layer between them that includes at least an active layer (also called a photoelectric conversion layer). The light-emitting element is preferably an organic EL element (organic electroluminescent element). The light-receiving element is preferably an organic photodiode (organic photoelectric conversion element).

[0045] Furthermore, it is preferable that the display device has two or more light-emitting elements that emit different colors. Each light-emitting element that emits a different color has an EL layer containing a different material. For example, a full-color display device can be realized by having three types of light-emitting elements that emit red (R), green (G), or blue (B) light, respectively.

[0046] One aspect of the present invention functions as an imaging device because it can capture images using multiple light-receiving elements. In this case, the light-emitting element can be used as a light source for imaging. Furthermore, one aspect of the present invention functions as a display device because it can display images using multiple light-emitting elements. Therefore, one aspect of the present invention can be described as a display device having an imaging function, or an imaging device having a display function.

[0047] For example, in one embodiment of the present invention, a display device has light-emitting elements arranged in a matrix on the display unit, and further, light-receiving elements are arranged in a matrix on the display unit. Therefore, the display unit has the function of displaying an image and the function of a light-receiving unit. Since an image can be captured by the multiple light-receiving elements provided on the display unit, the display device can function as an image sensor or a touch panel. That is, in one embodiment of the present invention, for example, an image can be captured on the display unit. Alternatively, in one embodiment of the present invention, a display device can detect when an object approaches the display unit or when an object comes into contact with the display unit. Furthermore, since the light-emitting elements provided on the display unit can be used as a light source when receiving light, there is no need to provide a light source separately from the display device, and a highly functional display device can be realized without increasing the number of electronic components.

[0048] In one aspect of the present invention, when an object reflects the light emitted from a light-emitting element of the display unit, a light-receiving element can detect the reflected light, thereby enabling imaging even in dark environments and enabling detection of touch (including non-contact) of an object.

[0049] Furthermore, a display device according to one aspect of the present invention can capture a fingerprint or palm print when a finger or palm is brought into contact with the display unit. Therefore, an electronic device having a display device according to one aspect of the present invention can perform personal authentication using the captured fingerprint or palm print image. This eliminates the need to provide a separate imaging device for fingerprint or palm print authentication, thereby reducing the number of components in the electronic device. In addition, since light-receiving elements are arranged in a matrix on the display unit, fingerprint or palm print imaging can be performed at any location on the display unit, resulting in a highly convenient electronic device.

[0050] Here, if a microcavity structure is applied to the light-emitting element, the light emitted from the light-emitting layer can be made to resonate between one of the pair of electrodes of the light-emitting element (one electrode) and the other electrode of the pair (the other electrode). This can strengthen the light emitted by the light-emitting element. Specifically, for example, a microcavity structure can be applied to a light-emitting element by using an electrode that is reflective to visible light (a reflective electrode) for one electrode of the light-emitting element, and an electrode that is both transparent and reflective to visible light (a semi-transparent / semi-reflective electrode) for the other electrode of the light-emitting element. For example, in the case of a top-emission type display device, a microcavity structure can be applied to a light-emitting element by using a reflective electrode for the lower electrode (also called a pixel electrode) and a semi-transparent / semi-reflective electrode for the upper electrode.

[0051] On the other hand, if, for example, a semi-transmissive / semi-reflective electrode is used for the upper electrode of a photodetector, some of the light irradiated toward the active layer of the photodetector may be reflected by the upper electrode and not enter the active layer. As a result, the photodetector's light-receiving sensitivity may decrease compared to when, for example, all the light irradiated toward the active layer of the photodetector enters the active layer, and the imaging sensitivity of the display device may decrease. Specifically, the imaging sensitivity of the imaging device in the display device may decrease.

[0052] Therefore, in one aspect of the present invention, a display device uses, for example, a semi-transparent / semi-reflective electrode for the upper electrode of the light-emitting element, and an electrode that is transparent to visible light (a transparent electrode) for the upper electrode of the photodetector. This makes it possible to apply a microcavity structure to the light-emitting element while increasing the light-receiving sensitivity of the photodetector. Thus, a display device in one aspect of the present invention can emit light with high color purity and perform imaging with high sensitivity.

[0053] [Configuration Example 1] Figure 1 shows a schematic top view of the display device 100. The display device 100 has multiple red-emitting light-emitting elements 110R, green-emitting light-emitting elements 110G, blue-emitting light-emitting elements 110B, and light-receiving elements 150. In Figure 1, the designation R, G, or B is added to the light-emitting area of ​​each light-emitting element for easy distinction. Also in Figure 1, the designation S is added to the light-receiving area of ​​the light-receiving elements.

[0054] In this specification, for example, when describing matters common to the light-emitting element 110R, light-emitting element 110G, and light-emitting element 110B, they may be referred to simply as light-emitting element 110. Similarly, when describing matters common to other components distinguished by letters, the letters may be omitted and the corresponding symbols used.

[0055] The light-emitting elements 110R, 110G, 110B, and 150 are each arranged in a matrix. Figure 1 shows a configuration in which two elements are arranged alternately in one direction. The arrangement method of the light-emitting elements is not limited to this, and other arrangement methods such as stripe arrangement, S-stripe arrangement, delta arrangement, Bayer arrangement, or zigzag arrangement may be applied, or a pentile arrangement or diamond arrangement may be used.

[0056] It is preferable to use EL elements such as OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode) as the light-emitting elements 110R, 110G, and 110B. Examples of light-emitting materials for EL elements include fluorescent materials, phosphorescent materials, inorganic compounds (e.g., quantum dot materials), and thermally activated delayed fluorescence (TADF) materials.

[0057] As the light-receiving element 150, for example, a pn-type or pin-type photodiode (also called a photodiode or PD) can be used. The light-receiving element 150 functions as a photoelectric conversion element that detects light incident on it and generates an electric charge. The amount of charge generated by the photoelectric conversion element is determined according to the amount of incident light. In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element 150. Organic photodiodes are easy to thin, lighten, and enlarge in area, and because they offer a high degree of freedom in shape and design, they can be applied to a variety of devices.

[0058] Because the display device 100 has a light-receiving element 150, the display device 100 can capture images. Therefore, the display device 100 can function as an image sensor or a touch panel. That is, the display device 100 can capture images on its display unit, for example. Alternatively, the display device 100 can detect when an object approaches the display unit or when an object touches the display unit. Furthermore, since the light-emitting element 110 can be used as a light source when receiving light, there is no need to provide a separate light source from the display device 100. Therefore, the display device 100 can be a highly functional display device without increasing the number of electronic components.

[0059] The display device 100 can detect reflected light from an object when the light emitted from the light-emitting element 110 is reflected by the object. Therefore, the display device 100 can take images even in dark environments and can also detect touch (including non-contact) of an object.

[0060] Furthermore, the display device 100 can capture a fingerprint or palm print when a finger or palm is placed in contact with the display area. Therefore, an electronic device having the display device 100 can perform personal authentication using the captured fingerprint or palm print image. This eliminates the need to provide a separate imaging device for fingerprint or palm print authentication, thus reducing the number of components in the electronic device. In addition, since the light-receiving elements 150 are arranged in a matrix on the display area, fingerprints or palm prints can be captured at any location on the display area. Thus, an electronic device having the display device 100 can be an electronic device with superior convenience.

[0061] Figure 1 shows electrode 111C, which is electrically connected to the electrodes (anode or cathode) of the light-emitting element 110R, light-emitting element 110G, light-emitting element 110B, and the photodetector 150. Figure 1 also shows electrode 166. Electrode 166 is electrically connected to, for example, an FPC (not shown). Electrodes 111C and 166 are also called connecting electrodes.

[0062] The electrode 111C is supplied with a potential for supplying to the anode or cathode. The electrode 111C is located outside the display area where the light-emitting element 110 and the light-receiving element 150 are arranged.

[0063] The electrode 111C can be provided along the outer perimeter of the display area. For example, it may be provided along one side of the outer perimeter of the display area, or it may be provided across two or more sides of the outer perimeter of the display area. That is, if the top surface shape of the display area is rectangular, the top surface shape of the electrode 111C can be a strip, L-shape, U-shape (angle bracket shape), or frame shape, etc. Also, if the electrode 166 is provided parallel to the electrode 111C, the electrode 166 can be provided outside the electrode 111C when viewed from the display area. In other words, the electrode 111C can be provided between the display area and the electrode 166.

[0064] Figure 2(A) is a schematic cross-sectional view corresponding to the dashed line A1-A2 in Figure 1. Figure 2(A) shows schematic cross-sectional views of the light-emitting element 110R, light-emitting element 110G, light-emitting element 110B, and light-receiving element 150. The light-emitting element 110 and the light-receiving element 150 are provided on a layer 101 containing a transistor. The layer 101 containing the transistor is provided on a substrate (not shown).

[0065] A layered structure can be applied in which, for example, multiple transistors are provided in the transistor-containing layer 101, and an insulating layer is provided to cover these transistors. Here, as shown in Figure 2(A), the transistor-containing layer 101 may have recesses between adjacent light-emitting elements 110. Also, the transistor-containing layer 101 may have recesses between adjacent light-emitting elements 110 and photodetectors 150. For example, recesses may be provided in the insulating layer located on the outermost surface of the transistor-containing layer 101. Note that the transistor-containing layer 101 may not have recesses between adjacent light-emitting elements 110, nor between adjacent light-emitting elements 110 and photodetectors 150.

[0066] The layer 101 containing the transistor preferably includes, for example, a pixel circuit, a scan line driving circuit (gate driver), and a signal line driving circuit (source driver). In addition to the above, it may also include an arithmetic circuit or a memory circuit.

[0067] The light-emitting element 110R includes an electrode 111R, an optical adjustment layer 116R on the electrode 111R, an EL layer 112R on the optical adjustment layer 116R, an organic layer 114 on the EL layer 112R, a transparent electrode 113a on the organic layer 114, and a semi-transparent / semi-reflective electrode 113b on the transparent electrode 113a. The light-emitting element 110G includes an electrode 111G, an optical adjustment layer 116G on the electrode 111G, an EL layer 112G on the optical adjustment layer 116G, an organic layer 114 on the EL layer 112G, a transparent electrode 113a on the organic layer 114, and a semi-transparent / semi-reflective electrode 113b on the transparent electrode 113a. The light-emitting element 110B includes an electrode 111B, an optical adjustment layer 116B on the electrode 111B, an EL layer 112B on the optical adjustment layer 116B, an organic layer 114 on the EL layer 112B, a transparent electrode 113a on the organic layer 114, and a semi-transparent / semi-reflective electrode 113b on the transparent electrode 113a. The light-receiving element 150 includes an electrode 111S, a PD layer 155 on the electrode 111S, an organic layer 114 on the PD layer 155, and a transparent electrode 113a on the organic layer 114.

[0068] The transmittance of visible light in the transparent electrode 113a is higher than that of the semi-transparent / semi-reflective electrode 113b. Furthermore, the reflectance of visible light in the transparent electrode 113a is lower than that of the semi-transparent / semi-reflective electrode 113b. Specifically, the transmittance of visible light in the transparent electrode 113a is 40% or higher. The reflectance of visible light in the semi-transparent / semi-reflective electrode 113b is 10% to 95%, preferably 30% to 80%. When the light-emitting element 110 emits near-infrared light (light with a wavelength of 750 nm to 1300 nm), it is preferable that the transmittance or reflectance of near-infrared light from these electrodes satisfies the above numerical range, similar to the transmittance or reflectance of visible light.

[0069] The transmittance of visible light or near-infrared light in the optical adjustment layer 116 can be set to the transmittance of visible light or near-infrared light that the transparent electrode 113a can take. Furthermore, the transmittance of visible light or near-infrared light in the optical adjustment layer 116 can be set to the transmittance of visible light or near-infrared light in the electrode 111. Furthermore, the reflectance of visible light or near-infrared light in the optical adjustment layer 116 can be set to the reflectance of visible light or near-infrared light that the transparent electrode 113a can take. Moreover, the reflectance of visible light or near-infrared light in the optical adjustment layer 116 can be set to the reflectance of visible light or near-infrared light in the electrode 111.

[0070] Here, electrode 111 can be called the lower electrode or pixel electrode. Alternatively, electrode 111 and the optical adjustment layer 116 can be collectively referred to as the lower electrode or pixel electrode. Furthermore, the transparent electrode 113a and the semi-transparent / semi-reflective electrode 113b can be called the upper electrode or opposing electrode. Note that electrode 111 may be the upper electrode, and the transparent electrode 113a and the semi-transparent / semi-reflective electrode 113b may be the lower electrode. The optical adjustment layer 116 can also be referred to as the electrode.

[0071] In the example shown in Figure 2(A), the transparent electrode 113a and the organic layer 114 are provided in common to each light-emitting element 110 and light-receiving element 150. Therefore, the transparent electrode 113a can be called a common electrode, and the organic layer 114 can be called a common layer.

[0072] The term "organic layer" refers to a layer that constitutes an organic EL element or an organic photoelectric conversion element, and does not necessarily require the inclusion of organic compounds.

[0073] The EL layer 112R of the light-emitting element 110R has a luminescent organic compound that emits light with intensity in at least the red wavelength range. The EL layer 112G of the light-emitting element 110G has a luminescent organic compound that emits light with intensity in at least the green wavelength range. The EL layer 112B of the light-emitting element 110B has a luminescent organic compound that emits light with intensity in at least the blue wavelength range. The layer containing the luminescent organic compound in the EL layer 112 can be called a light-emitting layer. The display device 100 may also have an EL layer 112 that emits light with intensity in the infrared wavelength range.

[0074] The PD layer 155 of the light-receiving element 150 contains a photoelectric conversion material that is sensitive to visible light or infrared light. Preferably, the wavelength range to which the photoelectric conversion material of the PD layer 155 is sensitive includes one or more of the wavelength ranges of light emitted by the light-emitting element 110R, the light-emitting element 110G, or the light-emitting element 110B. Alternatively, a photoelectric conversion material that is sensitive to infrared light with a longer wavelength than the wavelength range of light emitted by the light-emitting element 110R may be used. The layer containing the photoelectric conversion material included in the PD layer 155 can be called an active layer or a photoelectric conversion layer.

[0075] In this specification, visible light refers to light with a wavelength of 400 nm or more and less than 750 nm, and infrared light refers to light with a wavelength of 750 nm or more.

[0076] The EL layer 112 has at least an emissive layer. In addition to the emissive layer, the EL layer 112 may have one or more of the following: a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. For example, the EL layer 112 can be configured in which a hole injection layer, a hole transport layer, an emissive layer, and an electron transport layer are stacked in this order from the electrode 111 side. Alternatively, the EL layer 112 can be configured in which an electron injection layer, an electron transport layer, an emissive layer, and a hole transport layer are stacked in this order from the electrode 111 side.

[0077] The PD layer 155 has at least an active layer. In addition to the active layer, the PD layer 155 may have one or more of the following: a hole transport layer, a hole blocking layer, an electron blocking layer, and an electron transport layer. For example, the PD layer 155 can be configured in which a hole transport layer, an active layer, and an electron transport layer are stacked in this order from the electrode 111 side. Alternatively, the PD layer 155 can be configured in which an electron transport layer, an active layer, and a hole transport layer are stacked in this order from the electrode 111 side. In other words, the PD layer 155 can be configured without an electron injection layer and a hole injection layer.

[0078] The organic layer 114 can be an electron injection layer or a hole injection layer. If the organic layer 114 has an electron injection layer, the EL layer 112 does not need to have an electron injection layer, and if the organic layer 114 has a hole injection layer, the EL layer 112 does not need to have a hole injection layer. Here, it is preferable to use a material with the lowest possible electrical resistance for the organic layer 114. Alternatively, it is preferable to form it as thin as possible to reduce the electrical resistance in the thickness direction of the organic layer 114. For example, the thickness of the organic layer 114 is preferably 1 nm or more and 5 nm or less, and more preferably 1 nm or more and 3 nm or less.

[0079] The organic layer 114 may have a hole transport layer, a hole blocking layer, an electron blocking layer, or an electron transport layer. Therefore, the organic layer 114 can have at least one of the hole injection layer, hole transport layer, hole blocking layer, electron blocking layer, electron transport layer, or electron injection layer. The layers included in the organic layer 114 may be excluded from the EL layer 112 and the PD layer 155.

[0080] Here, the function of the organic layer 114 in the light-emitting element 110 may differ from the function of the organic layer 114 in the photodetector 150. For example, the organic layer 114 may function as an electron injection layer or a hole injection layer in the light-emitting element 110, and as an electron transport layer or a hole transport layer in the photodetector 150.

[0081] The optical adjustment layer 116 is a conductive layer that is transparent to visible light and has the function of adjusting the optical path length of the light emitted by the EL layer 112. For example, when the display device 100 is a top-emission type display device, the electrode 111, which can be the lower electrode of the light-emitting element 110, is configured to include an electrode that is reflective to visible light, and the upper electrode of the light-emitting element 110 is configured to include an electrode that is both transparent and reflective to visible light (a semi-transparent / semi-reflective electrode). When the light-emitting element 110 is configured in this way, the optical adjustment layer 116R has the function of adjusting the optical path length of the light emitted by the EL layer 112R. Furthermore, the optical adjustment layer 116G has the function of adjusting the optical path length of the light emitted by the EL layer 112G. In addition, the optical adjustment layer 116B has the function of adjusting the optical path length of the light emitted by the EL layer 112B. Therefore, by making the thicknesses of the optical adjustment layer 116R, the optical adjustment layer 116G, and the optical adjustment layer 116B different from each other, the optical path lengths of the light emitted by the EL layer 112R, the EL layer 112G, and the EL layer 112B can be made different from each other. For example, the optical adjustment layer 116R can be made thicker than the optical adjustment layer 116G, and the optical adjustment layer 116G can be made thicker than the optical adjustment layer 116B.

[0082] The light-emitting element 110 with the above configuration can have a microcavity structure in which the light emitted from the EL layer 112 resonates between the lower electrode and the upper electrode. This allows light of a specific wavelength to be amplified, making the display device 100 a display device with high color purity. For example, the light-emitting element 110R can emit light with enhanced red, the light-emitting element 110G can emit light with enhanced green, and the light-emitting element 110B can emit light with enhanced blue.

[0083] The light-emitting element 110 does not necessarily have an optical adjustment layer 116. In this case, for example, a microcavity structure can be applied to the light-emitting element 110 by making the thicknesses of the EL layer 112R, EL layer 112G, and EL layer 112B different from each other. For example, by making the thicknesses of the layers other than the light-emitting layer included in the EL layer 112 different for EL layer 112R, EL layer 112G, and EL layer 112B, the thicknesses of EL layer 112R, EL layer 112G, and EL layer 112B can be made different from each other. Specifically, for example, the thickness of one or more layers among the hole injection layer, hole transport layer, hole blocking layer, electron blocking layer, electron transport layer, and electron injection layer can be made different for EL layer 112R, EL layer 112G, and EL layer 112B.

[0084] On the other hand, if, for example, a semi-transmissive / semi-reflective electrode is used for the upper electrode of the photodetector 150, some of the light irradiated toward the PD layer 155 of the photodetector 150 may be reflected by the upper electrode of the photodetector 150 and may not enter the active layer of the photodetector 150. As a result, the photodetector sensitivity of the photodetector 150 may decrease compared to when, for example, all of the light incident toward the PD layer 155 enters the PD layer 155, and the imaging sensitivity of the display device 100 may decrease. Specifically, the imaging sensitivity of the imaging device of the display device 100 may decrease.

[0085] Therefore, in the example shown in Figure 2(A), for example, the upper electrode of the light-emitting element 110 is configured as a stacked structure of a transparent electrode 113a, which is an electrode that is transparent to visible light, and a semi-transparent / semi-reflective electrode 113b. In other words, the transparent electrode 113a and the semi-transparent / semi-reflective electrode 113b are configured to have a region that overlaps with the EL layer 112. On the other hand, the upper electrode of the light-receiving element 150 is the transparent electrode 113a. Specifically, the PD layer 155 is configured to have a region that does not overlap with the semi-transparent / semi-reflective electrode 113b, and preferably does not have a region that overlaps with the semi-transparent / semi-reflective electrode 113b. As a result, the imaging sensitivity of the display device 100, specifically the imaging sensitivity of the imaging device of the display device 100, can be increased compared to the case where the PD layer 155 overlaps with the semi-transparent / semi-reflective electrode 113b. Thus, the display device 100 can apply a microcavity structure to the light-emitting element 110 while increasing the light-receiving sensitivity of the light-receiving element 150. Therefore, the display device 100 can be a display device that emits light with high color purity and can perform imaging with high sensitivity.

[0086] For example, a metallic material can be used as the electrode 111. For example, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials (for example, an alloy of silver and magnesium) can be used as the electrode 111. Alternatively, a nitride of such metallic material (for example, titanium nitride) may be used as the electrode 111.

[0087] For the optical adjustment layer 116 and the transparent electrode 113a, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, indium tin oxide containing silicon, and indium zinc oxide containing silicon can be used. Alternatively, graphene may be used as the optical adjustment layer 116.

[0088] As the semi-transparent / semi-reflective electrode 113b, for example, a layer of a metal material thinned to a degree that is translucent can be used. For example, as the semi-transparent / semi-reflective electrode 113b, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials (for example, an alloy of silver and magnesium) can be used. Alternatively, nitrides of such metal materials (for example, titanium nitride) may be used for the semi-transparent / semi-reflective electrode 113b.

[0089] In the example shown in Figure 2(A), the transparent electrode 113a is provided in common to each light-emitting element 110 and the light-receiving element 150, while the semi-transparent / semi-reflective electrode 113b is provided in common to each light-emitting element 110. For example, when the transparent electrode 113a is provided in common to each light-emitting element 110, the semi-transparent / semi-reflective electrode 113b can be configured to have a region in contact with the transparent electrode 113a.

[0090] A protective layer 121 is provided on the transparent electrode 113a and the semi-transparent / semi-reflective electrode 113b, covering the light-emitting element 110 and the light-receiving element 150. The protective layer 121 has the function of preventing impurities such as water from diffusing to the light-emitting element 110 and the light-receiving element 150 from above.

[0091] Insulating layers 125 and 126 are provided in the region 120 between adjacent light-emitting elements 110 and light-receiving elements 150, and between two adjacent light-emitting elements 110. For example, insulating layers 125 and 126 are provided between adjacent EL layers 112 and PD layers 155, between adjacent EL layers 112, between adjacent optical adjustment layers 116, and between adjacent electrodes 111. The insulating layer 125 is provided along the sides of, for example, electrodes 111, optical adjustment layer 116, EL layer 112, and PD layer 155, and also along the upper surface of layer 101 containing transistors. The insulating layer 126 is provided on the insulating layer 125 and has the function of filling in recesses located in region 120 and flattening its upper surface. By flattening the recesses in region 120 with the insulating layer 126, the coverage of the transparent electrode 113a and the semi-transparent / semi-reflective electrode 113b can be improved.

[0092] The insulating layers 125 and 126 have the effect of preventing short circuits between the electrode 111 and the transparent electrode 113a and the semi-transparent / semi-reflective electrode 113b. In addition, the insulating layer 126 has the effect of improving the adhesion of the organic layer 114. That is, by providing the insulating layer 126, the adhesion of the organic layer 114 is improved, and thus peeling of the organic layer 114 can be suppressed.

[0093] Since the insulating layer 125 is provided in contact with the side surface of the EL layer 112, a structure can be created in which the EL layer 112 and the insulating layer 126 do not come into contact. If the EL layer 112 and the insulating layer 126 come into contact, especially if the EL layer 112 contains an organic compound, the EL layer 112 may dissolve due to, for example, an organic solvent contained in the insulating layer 126. For this reason, as shown in Figure 2(A), by providing the insulating layer 125 between the EL layer 112 and the insulating layer 126, the side surface of the EL layer 112 can be protected. In addition, the insulating layer 125 is provided in contact with the side surface of the PD layer 155. This allows the side surface of the PD layer 155 to be protected in the same way as the side surface of the EL layer 112. The region 120 only needs to be configured to separate at least one or more of the hole injection layer, hole transport layer, electron suppression layer, light-emitting layer, active layer, hole suppression layer, electron transport layer, and electron injection layer.

[0094] The insulating layer 125 may have an inorganic material. For example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxidative nitride insulating film, or an oxidative nitride insulating film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a multilayer structure. Examples of oxide insulating films include silicon oxide film, aluminum oxide film, magnesium oxide film, indium gallium zinc oxide film, gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film, hafnium oxide film, and tantalum oxide film. Examples of nitride insulating films include silicon nitride film and aluminum nitride film. Examples of oxidative nitride insulating films include silicon oxidative nitride film and aluminum oxidative nitride film. Examples of oxidative nitride insulating films include silicon oxidative nitride film and aluminum nitride film. In particular, by applying an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by atomic layer deposition (ALD) to the insulating layer 125, it is possible to form an insulating layer 125 with fewer pinholes and excellent function in protecting the EL layer 112 and the PD layer 155.

[0095] In this specification, "oxide nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0096] The insulating layer 125 can be formed using sputtering, chemical vapor deposition (CVD), pulsed laser deposition (PLD), or ALD. It is preferable to form the insulating layer 125 using the ALD method, which provides good coverage.

[0097] The insulating layer 126 may contain an organic material. For example, the insulating layer 126 can be an acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, or precursors of these resins. If the insulating layer 126 contains a resin, it can be called a resin layer.

[0098] Furthermore, as the insulating layer 126, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used.

[0099] Furthermore, a photosensitive resin can be used as the insulating layer 126. A photoresist may be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0100] Furthermore, by using a colored material (for example, a material containing black pigment) as the insulating layer 126, a function may be provided to block stray light from adjacent pixels and suppress color mixing.

[0101] Furthermore, a reflective film (for example, a metal film containing one or more selected from silver, palladium, copper, titanium, and aluminum, etc.) may be provided between the insulating layer 125 and the insulating layer 126, and the display device 100 may be given a function to improve light extraction efficiency by reflecting the light emitted from the light-emitting layer with the reflective film.

[0102] The protective layer 121 can be, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide films, silicon oxide nitride films, silicon nitride films, silicon nitride films, aluminum oxide films, aluminum oxide nitride films, and hafnium oxide films. Alternatively, semiconductor materials such as indium gallium oxide or indium gallium zinc oxide may be used as the protective layer 121.

[0103] As the protective layer 121, a laminated film of an inorganic insulating film and an organic insulating film can also be used. For example, it is preferable to have a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films. Furthermore, it is preferable that the organic insulating film functions as a planarizing film. This makes the upper surface of the organic insulating film flat, thereby improving the coverage of the inorganic insulating film on top of it and enhancing its barrier properties. In addition, since the upper surface of the protective layer 121 is flat, it is preferable because it reduces the influence of uneven shapes caused by the structure below when a structure (e.g., a color filter, touch sensor electrodes, or lens array, etc.) is provided above the protective layer 121.

[0104] Figure 2(B) is an enlarged view of region 120 and the surrounding region in Figure 2(A). As shown in Figure 2(B), the edge of the EL layer 112 can be located inward from the edge of the electrode 111 and the edge of the optical adjustment layer 116.

[0105] Furthermore, as shown in Figure 2(B), the ends of the electrode 111 and the ends of the optical adjustment layer 116 can have a tapered shape. This improves the coverage of the insulating layer 125 provided along the ends of the electrode 111 and the ends of the optical adjustment layer 116. In addition, foreign matter (for example, dust or particles) generated during the manufacturing process of the display device 100 can be suitably removed by washing or other processes. Note that the ends of the optical adjustment layer 116 do not have to be tapered. Also, there are cases where neither the ends of the optical adjustment layer 116 nor the ends of the electrode 111 are tapered.

[0106] In this specification, a tapered shape refers to a shape in which at least a portion of the side surface of a structure is inclined with respect to the substrate surface. For example, it is preferable to have a region in which the angle between the inclined side surface and the substrate surface (also called the taper angle) is less than 90°.

[0107] For example, Figure 2(B) shows an example where the edge of the optical adjustment layer 116 coincides with the edge of the electrode 111, but the edge of the optical adjustment layer 116 does not have to coincide with the edge of the electrode 111. The edge of the optical adjustment layer 116 may be located inside or outside the edge of the electrode 111. If the edge of the optical adjustment layer 116 is located outside the edge of the electrode 111, the optical adjustment layer 116 can cover the edge of the electrode 111.

[0108] Figures 2(C) and 2(D) show modified configurations of the one shown in Figure 2(B). Figure 2(C) shows an example where the edge of the EL layer 112 is aligned with, or approximately aligned with, the upper edge of the optical adjustment layer 116. Figure 2(D) shows an example where the edge of the EL layer 112 is located outside the edge of the optical adjustment layer 116 and the edge of the electrode 111. In Figure 2(D), the EL layer 112 is provided so as to cover the edge of the electrode 111 and the edge of the optical adjustment layer 116.

[0109] Furthermore, if the edges are aligned or roughly aligned, and the top surface shapes match or roughly match, then in a top view, at least a portion of the contours overlaps between the stacked layers. This includes, for example, cases where the upper and lower layers are processed with the same mask pattern, or partially with the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or the upper layer may be located outside the lower layer. In these cases as well, the edges are said to be roughly aligned, or the top surface shapes roughly match.

[0110] Figures 3(A) to 3(E) show modified versions of the configuration shown in Figure 2(B). In the configuration shown in Figure 3(A), the upper surface of the insulating layer 126 has a region that is higher than the upper surface of either of the EL layers 112 on both sides. As shown in Figure 3(A), the upper surface of the insulating layer 126 can have a shape that bulges in the center and its vicinity in a cross-sectional view, that is, a shape that has a convex curved surface.

[0111] In Figure 3(B), the upper surface of the insulating layer 126 has a shape that bulges gently towards the center in cross-sectional view, i.e., a convex curved surface, and a shape that is concave in the center and its vicinity, i.e., a concave curved surface. Furthermore, the display device 100 having the configuration shown in Figure 3(B) has at least one of the sacrificial layer 145a and sacrificial layer 145b, which will be described later, and the insulating layer 126 has a region that is higher than the upper surface of the EL layer 112, and this region is located on at least one of the sacrificial layer 145a and sacrificial layer 145b. In addition, an insulating layer 125 is provided between at least one of the sacrificial layer 145a and sacrificial layer 145b and the insulating layer 126. Note that the insulating layer 125 does not necessarily have to be provided between at least one of the sacrificial layer 145a and sacrificial layer 145b and the insulating layer 126.

[0112] In this specification, the sacrificial layer may be referred to as the mask layer, and the sacrificial film may be referred to as the mask film.

[0113] In Figure 3(C), the upper surface of the insulating layer 126 has a region that is lower than the upper surface of either of the EL layers 112 on either side. Furthermore, in cross-sectional view, the upper surface of the insulating layer 126 has a concave shape, meaning that the center and its vicinity are recessed.

[0114] In Figure 3(D), the upper surface of the insulating layer 125 has a region that is higher than the upper surface of the EL layer 112. That is, on the surface where the organic layer 114 is formed, the insulating layer 125 protrudes, forming a convex portion.

[0115] In forming the insulating layer 125, for example, if the insulating layer 125 is formed to match or approximately match the height of the sacrificial layer described later, a protruding shape of the insulating layer 125 may be formed, as shown in Figure 3(D).

[0116] In Figure 3(E), the upper surface of the insulating layer 125 has a region that is lower than the upper surface of the EL layer 112. That is, a recess is formed on the surface of the organic layer 114 at a position that overlaps with the insulating layer 125.

[0117] Thus, the insulating layer 125 and the insulating layer 126 can be made into various shapes.

[0118] Figures 4(A) and 4(B) show modified configurations of the configuration shown in Figure 2(A). Figure 4(A) shows an example configuration in which the semi-transparent / semi-reflective electrode 113b is not provided in common to each light-emitting element 110, but is provided separately. Figure 4(B) shows an example configuration in which the transparent electrode 113a does not become the upper electrode of the light-emitting element 110. For example, in the example shown in Figure 4(B), the transparent electrode 113a can be configured not to overlap with the EL layer 112. Also, for example, in the example shown in Figure 4(B), the semi-transparent / semi-reflective electrode 113b can be configured not to be in contact with the transparent electrode 113a.

[0119] Figures 4(C) and 4(D) show modified configurations of the configuration shown in Figure 4(B). Figure 4(C) shows an example configuration in which the semi-transparent / semi-reflective electrode 113b is not provided in common to each light-emitting element 110, but is provided separately. Figure 4(D) shows an example configuration in which the organic layer 114 is not provided in common to each light-emitting element 110 and the photodetector 150, but is provided separately for each light-emitting element 110. In other words, Figure 4(D) shows an example in which the organic layer 114 is not a common layer. In this case, the organic layer 114, which can be, for example, an electron injection layer or a hole injection layer, can be omitted from the photodetector 150.

[0120] When the organic layer 114 is provided separately for each light-emitting element 110, for example, the organic layer 114 provided on the light-emitting element 110R is described as organic layer 114R, the organic layer 114 provided on the light-emitting element 110G is described as organic layer 114G, and the organic layer 114 provided on the light-emitting element 110B is described as organic layer 114B.

[0121] Figure 4(E) shows a modified configuration of the one shown in Figure 4(D), in which the semi-transparent / semi-reflective electrodes 113b are not provided in common to each light-emitting element 110, but are provided separately.

[0122] As shown in Figures 4(B), 4(C), 4(D), and 4(E), by not providing a transparent electrode 113a on the EL layer 112, the conductivity of the upper electrode of the light-emitting element 110 can be increased if the electrical resistance of the transparent electrode 113a is higher than that of the semi-transparent / semi-reflective electrode 113b. On the other hand, in a configuration where a transparent electrode 113a is provided on the EL layer 112, the transparent electrode 113a can be used as a common electrode, thus simplifying the process of forming the transparent electrode 113a.

[0123] Figure 5(A) shows a modified configuration of the one shown in Figure 2(A), in which a semi-transparent / semi-reflective electrode 113b is provided on the organic layer 114, and a transparent electrode 113a is provided on the semi-transparent / semi-reflective electrode 113b and on the organic layer 114. In other words, Figure 5(A) shows a configuration in which the stacking order of the transparent electrode 113a and the semi-transparent / semi-reflective electrode 113b is reversed compared to the example shown in Figure 2(A).

[0124] For example, the optical path length in the light-emitting element 110 differs between a configuration in which a semi-transparent / semi-reflective electrode 113b is provided on a transparent electrode 113a, as shown in Figure 2(A), and a configuration in which a transparent electrode 113a is provided on a semi-transparent / semi-reflective electrode 113b, as shown in Figure 5(A). Specifically, the optical path length in the configuration in which a semi-transparent / semi-reflective electrode 113b is provided on a transparent electrode 113a, as shown in Figure 2(A), is longer by the thickness of the transparent electrode 113a than in the configuration in which a transparent electrode 113a is provided on a semi-transparent / semi-reflective electrode 113b, as shown in Figure 5(A).

[0125] Figures 5(B) and 5(C) show modified configurations of the configuration shown in Figure 5(A). Figure 5(B) shows an example configuration in which the semi-transparent / semi-reflective electrodes 113b are not provided in common to each light-emitting element 110, but are provided separately. Figure 5(C) shows an example configuration in which the organic layer 114 is not provided on the light-receiving element 150. As will be described in detail later, Figure 5(C) shows an example in which the shape of the insulating layer 125 and insulating layer 126 provided between the light-emitting element 110 and the light-receiving element 150 differs from the shape of the insulating layer 125 and insulating layer 126 shown in Figure 5(A), due to the manufacturing process of the display device 100.

[0126] Figure 5(D) shows a modified configuration of the one shown in Figure 5(C), illustrating an example where the semi-transparent / semi-reflective electrode 113b does not come into contact with the transparent electrode 113a. In the example shown in Figure 5(D), the transparent electrode 113a does not become the upper electrode of the light-emitting element 110.

[0127] Figure 5(E) shows a modified configuration of the one shown in Figure 5(D), illustrating an example where the semi-transparent / semi-reflective electrode 113b has a region in contact with the transparent electrode 113a. In the example shown in Figure 5(E), the semi-transparent / semi-reflective electrode 113b and the transparent electrode 113a are in contact in a portion of the insulating layer 125 and a portion of the insulating layer 126. In the configuration shown in Figure 5(E), if the transparent electrode 113a does not overlap with the EL layer 112, the transparent electrode 113a does not become the upper electrode of the light-emitting element 110.

[0128] As mentioned above, by not providing a transparent electrode 113a on the EL layer 112, if the electrical resistance of the transparent electrode 113a is higher than that of the semi-transparent / semi-reflective electrode 113b, the conductivity of the upper electrode of the light-emitting element 110 can be increased. On the other hand, in a configuration in which a transparent electrode 113a is provided on the EL layer 112, the transparent electrode 113a can be used as a common electrode, thus simplifying the process of forming the transparent electrode 113a.

[0129] Figure 6(A) is a schematic cross-sectional view corresponding to the dashed line B1-B2 in Figure 1, showing a connection portion 130 where electrode 111C, transparent electrode 113a, and semi-transparent / semi-reflective electrode 113b are electrically connected. In the connection portion 130 shown in Figure 6(A), electrode 111C is provided on layer 101 containing a transistor. In addition, an insulating layer 125 is provided on layer 101 containing a transistor, in contact with the side surface of electrode 111C, and an insulating layer 126 is provided on insulating layer 125. On electrode 111C, on insulating layer 125, and on insulating layer 126, an organic layer 114, transparent electrode 113a, semi-transparent / semi-reflective electrode 113b, and protective layer 121 are stacked in this order.

[0130] If the electrical resistance of the organic layer 114 in the thickness direction is negligibly small, conductivity between the electrode 111C and the transparent electrode 113a can be ensured even when the organic layer 114 is provided between the electrode 111C and the transparent electrode 113a. By using the organic layer 114 as a common layer and providing the organic layer 114 at the connection part 130, the organic layer 114 can be formed without using a metal mask, including, for example, a mask for defining the film deposition area (also called an area mask or rough metal mask, to distinguish it from a fine metal mask). Therefore, the manufacturing process of the display device 100 can be simplified.

[0131] Figures 6(B) to 6(D) show modified configurations of the configuration shown in Figure 6(A). Figure 6(B) shows an example configuration in which the organic layer 114 is not provided at the connection portion 130. In the example shown in Figure 6(B), the electrode 111C and the transparent electrode 113a can be in contact. This makes it possible to reduce the electrical resistance between the electrode 111C and the transparent electrode 113a.

[0132] Figure 6(C) shows an example configuration in which the semi-transparent / semi-reflective electrode 113b is not provided at the connection portion 130. Figure 6(D) shows an example configuration in which the semi-transparent / semi-reflective electrode 113b is patterned at the connection portion 130.

[0133] Figure 6(E) shows a modified configuration of the one shown in Figure 6(D), in which both the transparent electrode 113a and the semi-transparent / semi-reflective electrode 113b are patterned at the connection portion 130, and the end of the transparent electrode 113a coincides with the end of the semi-transparent / semi-reflective electrode 113b. Figure 6(F) shows another modified configuration of the one shown in Figure 6(E), in which the end of the transparent electrode 113a is located outside the end of the semi-transparent / semi-reflective electrode 113b.

[0134] Figures 6(G) and 6(H) show configurations in which the stacking order of the transparent electrode 113a and the semi-transparent / semi-reflective electrode 113b is reversed in the connection portion 130 shown in Figures 6(A) and 6(B). Figure 6(I) is a modified example of the configuration shown in Figure 6(G), showing an example of a configuration in which the transparent electrode 113a is not provided in the connection portion 130. Figures 6(J), 6(K), and 6(L) show configurations in which the stacking order of the transparent electrode 113a and the semi-transparent / semi-reflective electrode 113b is reversed in the connection portion 130 shown in Figures 6(D), 6(E), and 6(F).

[0135] Figure 7(A) is a schematic cross-sectional view corresponding to the dashed line C1-C2 in Figure 1, showing the connection portion 204 where the electrode 166 and the FPC 172 are electrically connected via the connecting layer 242.

[0136] In the connection portion 204 shown in Figure 7(A), an electrode 166 is provided on the layer 101 containing the transistor. In addition, an insulating layer 125 is provided on the layer 101 containing the transistor, in contact with the side surface of the electrode 166, and an insulating layer 126 is provided on the insulating layer 125. A protective layer 121 is provided on the electrode 166, the insulating layer 125, and the insulating layer 126. The protective layer 121 has an opening, and a connection layer 242 is provided such that it has a region embedded in the opening. Note that the protective layer 121 does not have to overlap with the electrode 166, nor does it have to overlap with the insulating layer 125. Also, the connection layer 242 may have a region that overlaps with the insulating layer 125, or a region that overlaps with the insulating layer 126.

[0137] The connection unit 204 may or may not be included in the display device 100. If the connection unit 204 is not included in the display device 100, the display device 100 and the connection unit 204 together can be referred to as a display module or display panel.

[0138] Figures 7(B) to 7(H) show modified configurations of the configuration shown in Figure 7(A). Figure 7(B) shows an example configuration in which an organic layer 114 is provided between the electrode 166 and the connecting layer 242. Figure 7(C) shows an example configuration in which a transparent electrode 113a is provided between the electrode 166 and the connecting layer 242. Figure 7(D) shows an example configuration in which a semi-transparent / semi-reflective electrode 113b is provided between the electrode 166 and the connecting layer 242. Figure 7(E) shows an example configuration in which a transparent electrode 113a and a semi-transparent / semi-reflective electrode 113b are stacked in this order between the electrode 166 and the connecting layer 242. Figure 7(F) shows an example configuration in which a transparent electrode 113a is provided on top of the semi-transparent / semi-reflective electrode 113b. Figure 7(G) shows an example configuration in which an organic layer 114, a transparent electrode 113a, and a semi-transparent / semi-reflective electrode 113b are stacked in this order between the electrode 166 and the connecting layer 242. Figure 7(H) shows an example configuration in which an organic layer 114, a semi-transparent / semi-reflective electrode 113b, and a transparent electrode 113a are stacked in this order between the electrode 166 and the connecting layer 242.

[0139] [Example of manufacturing method 1] In the following section, an example of a method for manufacturing a display device according to one aspect of the present invention will be described with reference to the drawings. Here, the display device 100 shown in the above configuration example will be used as an example.

[0140] The thin films (insulating films, semiconductor films, and conductive films, etc.) that constitute the display device can be formed using sputtering, CVD, vacuum deposition, PLD, or ALD methods. CVD methods include plasma-enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD is metal-organic CVD (MOCVD). Furthermore, ALD methods include PEALD and thermal ALD.

[0141] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0142] Furthermore, when processing the thin film that constitutes the display device, for example, photolithography can be used. In addition, the thin film may be processed by nanoimprint lithography, sandblasting, or lift-off lithography. Alternatively, island-shaped thin films may be directly formed by a film deposition method using a shielding mask such as a metal mask.

[0143] There are two main methods of photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film, for example by etching, and removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0144] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other options include ultraviolet light, KrF laser light, or ArF laser light. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light or X-rays may be used as the light source for exposure. An electron beam can also be used instead of the light source. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it allows for extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0145] For etching thin films, dry etching, wet etching, or sandblasting methods can be used.

[0146] Figures 8(A) to 13(C) are schematic cross-sectional diagrams showing an example of a method for manufacturing a display device 100, in which the light-emitting element 110 and the light-receiving element 150 are configured as shown in Figure 2(A), and the connection part 130 is configured as shown in Figure 6(A).

[0147] To fabricate the display device 100, first, a layer 101 containing transistors is formed on a substrate (not shown). As mentioned above, the layer 101 containing transistors can be a laminated structure in which, for example, an insulating layer is provided so as to cover the transistors.

[0148] As the substrate, a substrate with sufficient heat resistance to withstand subsequent heat treatment can be used. When using an insulating substrate, glass substrates, quartz substrates, sapphire substrates, ceramic substrates, or organic resin substrates can be used. In addition, semiconductor substrates such as single-crystal semiconductor substrates, polycrystalline semiconductor substrates, compound semiconductor substrates such as silicon-germanium, or SOI substrates made from silicon or silicon carbide can be used.

[0149] Next, a conductive film to form the electrode 111 and a conductive film to form the optical adjustment layer 116 are deposited on the layer 101 containing the transistor. Specifically, for example, a conductive film to form the electrode 111 is deposited on the insulating surface of the layer 101 containing the transistor, and a conductive film to form the optical adjustment layer 116 is deposited on the conductive film. Subsequently, a portion of these conductive films is etched away to form electrodes 111R, 111G, 111B, 111S, and 111C on the layer 101 containing the transistor. Furthermore, an optical adjustment layer 116R is formed on electrode 111R, an optical adjustment layer 116G is formed on electrode 111G, and an optical adjustment layer 116B is formed on electrode 111B (Figure 8(A)). For example, electrode 166 shown in Figure 7(A) can be formed by etching away a portion of the conductive film to form electrode 111.

[0150] Next, an EL film 112Rf, which will later become the EL layer 112R, is formed on the optical adjustment layer 116R, the optical adjustment layer 116G, the optical adjustment layer 116B, the electrode 111S, and the layer 101 containing the transistor. Here, the EL film 112Rf can be formed so as not to overlap with the electrode 111C. For example, by shielding the region containing the electrode 111C with a metal mask and forming the EL film 112Rf, the EL film 112Rf can be formed so as not to overlap with the electrode 111C. In this case, the metal mask does not need to shield the pixel area of ​​the display unit, so it is not necessary to use a high-resolution mask, and for example, a rough metal mask can be used.

[0151] The EL film 112Rf has at least one film containing a luminescent compound (luminescent film). In addition, the EL film 112Rf may have a configuration in which one or more films functioning as hole injection layers, hole transport layers, hole blocking layers, electron blocking layers, electron transport layers, or electron injection layers are laminated. For example, the EL film 112Rf can have a configuration in which a film functioning as a hole injection layer, a film functioning as a hole transport layer, a luminescent film, and a film functioning as an electron transport layer are laminated in this order. Alternatively, the EL film 112Rf can have a configuration in which a film functioning as an electron injection layer, a film functioning as an electron transport layer, a luminescent film, and a film functioning as a hole transport layer are laminated in this order.

[0152] The EL film 112Rf can be formed by, for example, vapor deposition, sputtering, or inkjet. However, it is not limited to these methods, and the above-mentioned film formation methods can be used as appropriate.

[0153] Next, a sacrificial film 144Ra is formed on the EL film 112Rf, on the electrode 111C, and on the layer 101 containing the transistor, and a sacrificial film 144Rb is formed on the sacrificial film 144Ra. In other words, a two-layer stacked sacrificial film is formed on the EL film 112Rf, on the electrode 111C, and on the layer 101 containing the transistor. Note that the sacrificial film may be a single layer or a stacked structure of three or more layers. When forming a sacrificial film in subsequent steps, a two-layer stacked sacrificial film is formed, but it may be a single layer or a stacked structure of three or more layers.

[0154] For the formation of the sacrificial films 144Ra and 144Rb, for example, sputtering, CVD, ALD, or vacuum deposition can be used. A formation method that causes less damage to the EL film is preferred, and the sacrificial film 144Ra, which is formed directly on the EL film 112Rf, is preferably formed using the ALD or vacuum deposition method.

[0155] As the sacrificial film 144Ra, a metal film, alloy film, metal oxide film, semiconductor film, or an inorganic film such as an inorganic insulating film, or an organic film such as an organic insulating film can be suitably used.

[0156] Furthermore, an oxide film can be used as the sacrificial film 144Ra. Typically, oxide films or oxynitride films such as silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, or hafnium oxynitride can be used. Alternatively, a nitride film can be used as the sacrificial film 144Ra. Specifically, nitrides such as silicon nitride, aluminum nitride, hafnium nitride, titanium nitride, tantalum nitride, tungsten nitride, gallium nitride, or germanium nitride can be used. Films having such inorganic insulating materials can be formed using film deposition methods such as sputtering, CVD, or ALD, but the sacrificial film 144Ra formed directly on the EL film 112Rf is particularly preferably formed using the ALD method.

[0157] Furthermore, as the sacrificial film 144Ra, metal materials such as nickel, tungsten, chromium, molybdenum, cobalt, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or alloy materials containing such metal materials, can be used. In particular, it is preferable to use low-melting-point materials such as aluminum or silver.

[0158] Furthermore, metal oxides such as indium gallium zinc oxide (In-Ga-Zn oxide) can be used as the sacrificial film 144Ra. In addition, indium oxide, indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide), indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), or indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide) can be used. Alternatively, indium tin oxide containing silicon can also be used.

[0159] Furthermore, the above-mentioned method can also be applied when element M (where M is one or more selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) is used instead of gallium. In particular, it is preferable that M be one or more selected from gallium, aluminum, or yttrium.

[0160] As the sacrificial film 144Rb, any of the materials listed above that can be used as the sacrificial film 144Ra can be used. For example, one material can be selected as the sacrificial film 144Ra from the materials listed above that can be used as the sacrificial film 144Ra, and another material can be selected as the sacrificial film 144Rb. Alternatively, from the materials listed above that can be used as the sacrificial film 144Ra, one or more materials can be selected for the sacrificial film 144Ra, and one or more materials selected from materials other than those selected for the sacrificial film 144Ra can be used for the sacrificial film 144Rb.

[0161] Specifically, it is preferable to use aluminum oxide formed by the ALD method as the sacrificial film 144Ra and silicon nitride formed by the sputtering method as the sacrificial film 144Rb. In this configuration, it is preferable to set the film deposition temperature during film deposition by the ALD method and the sputtering method to room temperature or higher and 120°C or lower, preferably room temperature or higher and 100°C or lower, as this reduces the effect on the EL film 112Rf. Furthermore, in the case of a laminated structure of sacrificial film 144Ra and sacrificial film 144Rb, it is preferable that the stress of the laminated structure is small. Specifically, it is preferable that the stress of the laminated structure be between -500 MPa and +500 MPa, more preferably between -200 MPa and +200 MPa, as this suppresses process troubles such as film delamination and peeling.

[0162] The sacrificial film 144Ra can be a film with high resistance to etching treatment of each EL film, such as the EL film 112Rf, i.e., a film with a high etching selectivity ratio. Furthermore, it is particularly preferable that the sacrificial film 144Ra be a film that can be removed by a wet etching method that causes little damage to each EL film.

[0163] Furthermore, a material soluble in a chemically stable solvent may be used as the sacrificial film 144Ra. In particular, a material soluble in water or alcohol can be suitably used as the sacrificial film 144Ra. When forming the sacrificial film 144Ra, it is preferable to apply it using a wet deposition method while dissolved in a solvent such as water or alcohol, and then perform a heat treatment to evaporate the solvent. At this time, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature and in a short time, thereby reducing thermal damage to the EL film 112Rf.

[0164] Wet film deposition methods that can be used to form the sacrificial film 144Ra include spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0165] As the sacrificial film 144Ra, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used.

[0166] For the sacrificial film 144Rb, a film with a high etching selectivity ratio with the sacrificial film 144Ra should be used.

[0167] It is preferable to use an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide formed by the ALD method as the sacrificial film 144Ra, and a metallic material such as nickel, tungsten, chromium, molybdenum, cobalt, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metallic material, formed by the sputtering method, as the sacrificial film 144Rb. In particular, it is preferable to use tungsten formed by the sputtering method as the sacrificial film 144Rb. Alternatively, an indium-containing metal oxide such as indium gallium zinc oxide (In-Ga-Zn oxide), formed by the sputtering method, may be used as the sacrificial film 144Rb. Furthermore, an inorganic material may be used as the sacrificial film 144Rb. For example, an oxide film or nitride film such as a silicon oxide film, silicon oxide nitride film, silicon nitride film, silicon oxide film, aluminum oxide film, aluminum oxide nitride film, or hafnium oxide film can be used.

[0168] Furthermore, as the sacrificial film 144Rb, an organic film that can be used for the EL film 112Rf may be used, for example. For instance, the same organic film used for the EL film 112Rf can be used as the sacrificial film 144Rb. Using such an organic film is preferable because it allows the same deposition equipment to be used for both the EL film 112Rf and the sacrificial film 144Rb. Moreover, since the sacrificial film 144Rb can be removed simultaneously when etching the EL film 112Rf, the process can be simplified.

[0169] Next, a resist mask 143a is formed on the sacrificial film 144Rb (Figure 8(B)). The resist mask 143a can be made of a resist material containing a photosensitive resin, such as a positive-type resist material or a negative-type resist material.

[0170] Next, portions of the sacrificial film 144Rb and sacrificial film 144Ra that are not covered by the resist mask 143a are removed by etching to form island-shaped or strip-shaped sacrificial layers 145Rb and 145Ra (Figure 8(C)). As shown in Figure 8(C), the sacrificial layers 145Rb and 145Ra can be formed, for example, on electrode 111R and on electrode 111C.

[0171] Here, it is preferable to remove a portion of the sacrificial film 144Rb by etching using the resist mask 143a to form a sacrificial layer 145Rb, then remove the resist mask 143a, and subsequently etch the sacrificial film 144Ra using the sacrificial layer 145Rb as a hard mask. In this case, it is preferable to use etching conditions that have a high selectivity ratio with respect to the sacrificial film 144Ra for etching the sacrificial film 144Rb. For etching to form the hard mask, either a wet etching method or a dry etching method can be used, but by using the dry etching method, pattern reduction can be suppressed.

[0172] The sacrificial films 144Ra and 144Rb, and the resist mask 143a, can be processed by wet etching or dry etching. For example, the sacrificial films 144Ra and 144Rb can be processed by dry etching using a fluorine-containing gas. The resist mask 143a can be removed by dry etching (also known as plasma ashing) using an oxygen-containing gas (also known as oxygen gas).

[0173] When etching the sacrificial film 144Ra using the sacrificial layer 145Rb as a hard mask, the resist mask 143a can be removed while the EL film 112Rf is covered by the sacrificial film 144Ra. For example, if the EL film 112Rf comes into contact with oxygen, it may adversely affect the electrical characteristics of the light-emitting element 110R. Therefore, when removing the resist mask 143a using a method that uses oxygen gas, such as plasma ashing, it is preferable to etch the sacrificial film 144Ra using the sacrificial layer 145Rb as a hard mask.

[0174] Next, a portion of the EL film 112Rf not covered by the sacrificial layer 145Ra is removed by etching to form island-shaped or strip-shaped EL layers 112R (Figure 8(D)).

[0175] Using a dry etching method with oxygen gas to etch the EL film 112Rf increases the etching rate. Therefore, etching can be performed under low power conditions while maintaining a sufficiently fast etching rate, thereby reducing etching damage. Furthermore, problems such as the adhesion of reaction products to the EL layer 112R during etching can be suppressed.

[0176] On the other hand, etching the EL film 112Rf using a dry etching method with an etching gas that does not contain oxygen as its main component suppresses deterioration of the EL film 112Rf, making the display device 100 a highly reliable display device. Examples of etching gases that do not contain oxygen as its main component include gases containing CF4, C4F8, SF6, CHF3, Cl2, H2O, or BCl3, or gases containing group 18 elements such as He. In addition, a mixed gas of the above gas and an oxygen-free diluent gas can be used as the etching gas. Note that etching of the EL film 112Rf is not limited to the above, and may be carried out by a dry etching method using other gases or by a wet etching method.

[0177] When the EL film 112Rf is etched to form the EL layer 112R, if impurities are attached to the side surface of the EL layer 112R, these impurities may penetrate into the interior of the EL layer 112R in subsequent processes. This may reduce the reliability of the display device 100. Therefore, it is preferable to remove impurities attached to the surface of the EL layer 112R after its formation to improve the reliability of the display device 100.

[0178] Impurities adhering to the surface of the EL layer 112R can be removed, for example, by irradiating the surface of the EL layer 112R with an inert gas. Immediately after the formation of the EL layer 112R, the surface of the EL layer 112R is exposed. Specifically, the side surfaces of the EL layer 112R are exposed. Therefore, after the formation of the EL layer 112R, if the substrate on which the EL layer 112R is formed is placed in an inert gas atmosphere, impurities adhering to the EL layer 112R can be removed. As the inert gas, one or more selected from, for example, Group 18 elements (typically helium, neon, argon, xenon, and krypton, etc.) and nitrogen can be used.

[0179] Next, an EL film 112Gf, which will later become the EL layer 112G, is formed on the sacrificial layer 145Rb, the optical adjustment layer 116G, the optical adjustment layer 116B, the electrode 111S, and the layer 101 containing the transistor. By forming the EL film 112Gf after forming the sacrificial layer 145Ra, it is possible to suppress contact between the EL film 112Gf and the upper surface of the EL layer 112R. For details on the formation of the EL film 112Gf, etc., please refer to the description of the formation of the EL film 112Rf, etc.

[0180] Next, a sacrificial film 144Ga is formed on the EL film 112Gf, on the sacrificial layer 145Rb, and on the transistor-containing layer 101, and a sacrificial film 144Gb is formed on the sacrificial film 144Ga. Subsequently, a resist mask 143b is formed on the sacrificial film 144Gb (Figure 9(A)). For details on the formation of the sacrificial film 144Ga, sacrificial film 144Gb, and resist mask 143b, refer to the descriptions of the formation of the sacrificial film 144Ra, sacrificial film 144Rb, and resist mask 143a, respectively.

[0181] Next, portions of the sacrificial film 144Gb and sacrificial film 144Ga that are not covered by the resist mask 143b are removed by etching to form island-shaped or strip-shaped sacrificial layers 145Gb and 145Ga. The resist mask 143b is also removed (Figure 9(B)). Here, the sacrificial layers 145Gb and 145Ga can be formed on the electrode 111G. For details on the formation of the sacrificial layers 145Gb and 145Ga, and the removal of the resist mask 143b, etc., refer to the descriptions for the formation of the sacrificial layer 145Rb and 145Ra, and the removal of the resist mask 143a, etc.

[0182] Next, a portion of the EL film 112Gf not covered by the sacrificial layer 145Ga is removed by etching to form island-shaped or strip-shaped EL layers 112G (Figure 9(C)). For details on the formation of the EL layers 112G, refer to the description of the formation of the EL layer 112R. In addition, it is preferable to remove impurities adhering to the surface of the EL layer 112G, similar to the EL layer 112R. For example, after the formation of the EL layers 112G, placing the substrate on which the EL layers 112G are formed under an inert gas atmosphere can remove impurities adhering to the EL layers 112G.

[0183] Next, an EL film 112Bf, which will later become the EL layer 112B, is formed on the sacrificial layer 145Rb, the sacrificial layer 145Gb, the optical adjustment layer 116B, the electrode 111S, and the layer 101 containing the transistor. By forming the EL film 112Bf after forming the sacrificial layer 145Ga, it is possible to suppress contact between the EL film 112Bf and the upper surface of the EL layer 112G. For details on the formation of the EL film 112Bf, etc., please refer to the description of the formation of the EL film 112Rf, etc.

[0184] Next, a sacrificial film 144Ba is formed on the EL film 112Bf, on the sacrificial layer 145Rb, and on the layer 101 containing the transistor, and a sacrificial film 144Bb is formed on the sacrificial film 144Ba. Subsequently, a resist mask 143c is formed on the sacrificial film 144Bb (Figure 10(A)). For details on the formation of the sacrificial film 144Ba, sacrificial film 144Bb, and resist mask 143c, refer to the descriptions of the formation of the sacrificial film 144Ra, sacrificial film 144Rb, and resist mask 143a, respectively.

[0185] Next, portions of the sacrificial layers 144Bb and 144Ba that are not covered by the resist mask 143c are removed by etching to form island-shaped or strip-shaped sacrificial layers 145Bb and 145Ba. The resist mask 143c is then removed (Figure 10(B)). Here, the sacrificial layers 145Bb and 145Ba can be formed on the electrode 111B. For details on the formation of the sacrificial layers 145Bb and 145Ba, and the removal of the resist mask 143c, refer to the descriptions for the formation of the sacrificial layers 145Rb and 145Ra, and the removal of the resist mask 143a.

[0186] Next, a portion of the EL film 112Bf not covered by the sacrificial layer 145Ba is removed by etching to form island-shaped or strip-shaped EL layers 112B (Figure 10(C)). For details on the formation of EL layers 112B, etc., refer to the description of the formation of EL layer 112R, etc. Also, similar to EL layers 112R and EL layers 112G, it is preferable to remove impurities adhering to the surface of EL layer 112B. For example, after the formation of EL layer 112B, placing the substrate on which the EL layer 112B is formed under an inert gas atmosphere can remove impurities adhering to EL layer 112B.

[0187] Next, a PD film 155f, which will later become the PD layer 155, is formed on the sacrificial layer 145Rb, the sacrificial layer 145Gb, the sacrificial layer 145Bb, the electrode 111S, and the layer 101 containing the transistor. By forming the PD film 155f after forming the sacrificial layer 145Ba, it is possible to suppress contact between the PD film 155f and the upper surface of the EL layer 112B. For details on the formation of the PD film 155f, etc., please refer to the description of the formation of the EL film 112Rf, etc.

[0188] The PD film 155f has a film (photoelectric conversion film) containing a photoelectric conversion material that is sensitive to visible light or infrared light. In addition, the PD film 155f may have a configuration in which one or more films that function as a hole transport layer, a hole blocking layer, an electron blocking layer, or an electron transport layer are laminated. For example, the PD film 155f can have a configuration in which a film that functions as a hole transport layer, a photoelectric conversion film, and a film that functions as an electron transport layer are laminated in this order. Alternatively, the PD film 155f can have a configuration in which a film that functions as an electron transport layer, a photoelectric conversion film, and a film that functions as a hole transport layer are laminated in this order.

[0189] Next, a sacrificial film 144Sa is formed on the PD film 155f, on the sacrificial layer 145Rb, and on the layer 101 containing the transistor, and a sacrificial film 144Sb is formed on the sacrificial film 144Sa. Subsequently, a resist mask 143d is formed on the sacrificial film 144Sb (Figure 11(A)). For details on the formation of the sacrificial film 144Sa, sacrificial film 144Sb, and resist mask 143d, refer to the descriptions of the formation of the sacrificial film 144Ra, sacrificial film 144Rb, and resist mask 143a, respectively.

[0190] Next, portions of the sacrificial film 144Sb and sacrificial film 144Sa that are not covered by the resist mask 143d are removed by etching to form island-shaped or strip-shaped sacrificial layers 145Sb and 145Sa. The resist mask 143d is then removed (Figure 11(B)). Here, the sacrificial layers 145Sb and 145Sa can be formed on the electrode 111S. For details on the formation of the sacrificial layers 145Sb and 145Sa, and the removal of the resist mask 143d, refer to the descriptions for the formation of the sacrificial layer 145Rb and 145Ra, and the removal of the resist mask 143a.

[0191] Next, a portion of the PD film 155f not covered by the sacrificial layer 145Sa is removed by etching to form island-shaped or strip-shaped PD layers 155 (Figure 11(C)). For details on the formation of the PD layers 155, refer to the description of the formation of the EL layer 112R, etc. Furthermore, similar to the EL layers 112R, EL layers 112G, and EL layers 112B, it is preferable to remove impurities adhering to the surface of the PD layers 155. For example, after the formation of the PD layers 155, placing the substrate on which the PD layers 155 are formed under an inert gas atmosphere can remove impurities adhering to the PD layers 155.

[0192] Next, an insulating film 125f, which will later become the insulating layer 125, is formed to cover the upper surface of the layer 101 containing the transistor, the electrode 111, the optical adjustment layer 116, the EL layer 112, the PD layer 155, the sides of the sacrificial layer 145a, and the upper and sides of the sacrificial layer 145b.

[0193] In this specification, for example, when describing matters common to sacrificial layers 145Ra, 145Ga, 145Ba, and 145Sa, they may be referred to as sacrificial layer 145a. Similarly, when describing matters common to sacrificial layers 145Rb, 145Gb, 145Bb, and 145Sb, they may be referred to as sacrificial layer 145b. Furthermore, when describing matters common to sacrificial layers 145a and 145b, they may be referred to as sacrificial layer 145. Other components may also be described using symbols with the letters omitted as described above.

[0194] The insulating film 125f can be formed using sputtering, CVD, PLD, or ALD, but it is preferable to form it using the ALD method, which provides good coverage. Furthermore, inorganic materials can be used as the insulating film 125f; for example, oxide insulating films, nitride insulating films, oxidogenic nitride insulating films, and nitride oxide insulating films can be used. In particular, by using an inorganic insulating film such as an aluminum oxide film, hafnium oxide film, or silicon oxide film formed by the ALD method, an insulating film with fewer pinholes can be obtained.

[0195] Next, an insulating film 126f, which will later become an insulating layer 126, is formed on the insulating film 125f (Figure 12(A)). It is preferable to use an insulating film containing an organic material as the insulating film 126f, and it is preferable to use a resin as the organic material. Alternatively, a photosensitive resin can be used as the insulating film 126f. The photosensitive resin can be a positive-type material or a negative-type material. When the insulating film 126f contains a resin, the insulating film 126f can be called a resin film.

[0196] When a photosensitive resin is used as the insulating film 126f, the insulating film 126f can be formed using methods such as spin coating, spraying, screen printing, or painting.

[0197] As shown in Figure 12(A), the insulating film 126f may have smooth irregularities that reflect the unevenness of the surface to which it is formed. Furthermore, the insulating film 126f may be flattened.

[0198] Next, an insulating layer 126 is formed. By using a photosensitive resin as the insulating film 126f, the insulating layer 126 can be formed without providing an etching mask such as a resist mask or a hard mask. Furthermore, since the photosensitive resin can be processed only by exposure and development steps, the insulating layer 126 can be formed without using, for example, a dry etching method. Thus, the process can be simplified. In addition, damage to the EL layer 112 and the PD layer 155 due to etching of the insulating film 126f can be reduced.

[0199] Alternatively, an insulating layer 126 may be formed by etching the upper surface of the insulating film 126f substantially uniformly. This process of uniform etching and planarization is also called etch-back.

[0200] In forming the insulating layer 126, the exposure and development process and the etch-back process may be used in combination.

[0201] Next, the insulating film 125f is etched to form the insulating layer 125 (Figure 12(B)). The insulating layer 125 can be formed so as to be in contact with the sides of, for example, the electrode 111, the optical adjustment layer 116, the EL layer 112, the PD layer 155, the sacrificial layer 145a, and the sacrificial layer 145b. The insulating layer 125 can also be formed so as to be in contact with the sides and bottom of the insulating layer 126. In other words, the insulating layer 125 can be provided between, for example, the EL layer 112 or the PD layer 155 and the insulating layer 126.

[0202] Etching the insulating film 125f by anisotropic etching is preferable because it allows for the suitable formation of the insulating layer 125 without the need for patterning using, for example, photolithography. For example, by forming the insulating layer 125 without patterning using photolithography, the manufacturing process of the display device 100 can be simplified, thereby reducing the manufacturing cost of the display device 100. Therefore, the display device 100 can be made into a low-cost display device. An example of anisotropic etching is dry etching. When etching the insulating film 125f by dry etching, for example, the insulating film 125f can be etched using an etching gas that can be used when etching the sacrificial film 144.

[0203] Next, sacrificial layers 145b and 145a are removed using etching or the like (Figure 12(C)). Here, sacrificial layers 145b and 145a can be removed using different methods, for example, etching conditions. For example, sacrificial layer 145b can be removed using a method that has high selectivity for sacrificial layer 145a, and sacrificial layer 145a can be removed using a method that causes as little damage as possible to the EL layer 112 and PD layer 155. For example, sacrificial layer 145b can be removed using a dry etching method, and sacrificial layer 145a can be removed using a wet etching method.

[0204] Figure 12(C) shows an example in which the removal of sacrificial layers 145b and 145a removes a portion of the insulating layers 125 and 126, and at least a portion of the upper surfaces of the insulating layers 125 and 126 coincides with at least a portion of the upper surface of the EL layer 112, the PD layer 155, or the upper surface of the electrode 111C. However, the present invention is not limited to this. For example, in the A1-A2 cross section shown in Figure 12(C), at least a portion of the upper surfaces of the insulating layers 125 and 126 may be higher than at least a portion of the upper surface of the EL layer 112 or the PD layer 155. Also, in the B1-B2 cross section shown in Figure 12(C), at least a portion of the upper surfaces of the insulating layers 125 and 126 may be higher than at least a portion of the upper surface of the electrode 111C.

[0205] Next, a vacuum bake treatment is performed to remove water and other substances adsorbed on the surface of the EL layer 112 and the PD layer 155. Vacuum baking is preferably performed within a temperature range that does not alter the organic compounds contained in the EL layer 112 and the PD layer 155, for example, between 70°C and 120°C, more preferably between 80°C and 100°C. However, if there is little water or other substances adsorbed on the surface of the EL layer 112 and the PD layer 155, and the impact on the reliability of the display device 100 is minimal, vacuum baking may not be necessary.

[0206] Next, an organic layer 114 is formed on the EL layer 112, the PD layer 155, the insulating layer 125, the insulating layer 126, and the electrode 111C (Figure 12(D)). As mentioned above, the organic layer 114 has at least one of the following: a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, or an electron injection layer, for example, an electron injection layer or a hole injection layer. The organic layer 114 can be formed by, for example, a vapor deposition method, a sputtering method, or an inkjet method. If the organic layer 114 is not provided on the electrode 111C, a metal mask can be used to shield the electrode 111C when forming the organic layer 114. In this case, the metal mask does not need to shield the pixel area of ​​the display unit, so there is no need to use a high-resolution mask, and for example, a rough metal mask can be used.

[0207] Next, a transparent electrode 113a is formed on the organic layer 114, and a conductive film 113bf, which will later become a semi-transparent / semi-reflective electrode 113b, is formed on the transparent electrode 113a. For example, the transparent electrode 113a is formed so as to be in contact with the upper surface of the organic layer 114, and the conductive film 113bf is formed so as to be in contact with the upper surface of the transparent electrode 113a. The transparent electrode 113a and the conductive film 113bf can be formed by, for example, sputtering or vacuum deposition. The conductive film 113bf can be described as a semi-transparent / semi-reflective film.

[0208] The transmittance of visible light in the transparent electrode 113a is set to be higher than that of the conductive film 113bf. Furthermore, the reflectance of visible light in the transparent electrode 113a is set to be lower than that of the conductive film 113bf. Specifically, as described above, the transmittance of visible light in the transparent electrode 113a is set to 40% or higher. The reflectance of visible light in the conductive film 113bf is set to be between 10% and 95%, preferably between 30% and 80%.

[0209] As the transparent electrode 113a, a conductive oxide or graphene can be used, for example, indium tin oxide or indium zinc oxide. As the conductive film 113bf, for example, a layer of a metal material thinned to a degree that is translucent can be used, for example, an alloy of silver and magnesium can be used.

[0210] Next, a resist mask 149a is formed on the conductive film 113bf (Figure 13(A)). Similar to resist masks 143a to 143d, the resist mask 149a can be made of a resist material containing a photosensitive resin, such as a positive-type resist material or a negative-type resist material.

[0211] Next, a portion of the conductive film 113bf not covered by the resist mask 149a is removed by etching to form island-shaped or strip-shaped semi-transparent / semi-reflective electrodes 113b. This allows the light-emitting element 110 and the light-receiving element 150 to be fabricated. Here, the semi-transparent / semi-reflective electrodes 113b are formed to have regions that do not overlap with the PD layer 155. It is also preferable that the semi-transparent / semi-reflective electrodes 113b are formed so that they do not have regions that overlap with the PD layer 155.

[0212] Subsequently, the resist mask 149a is removed (Figure 13(B)). The resist mask 149a can be removed by plasma ashing, similar to the resist masks 143a to 143d.

[0213] Next, a protective layer 121 is formed on the transparent electrode 113a and the semi-transparent / semi-reflective electrode 113b (Figure 13(C)). When an inorganic insulating film is used as the protective layer 121, it is preferable to form the protective layer 121 using, for example, a sputtering method, a CVD method, or an ALD method. When an organic insulating film is used as the protective layer 121, it is preferable to form the protective layer 121 using, for example, an inkjet method, because a uniform film can be formed in the desired area.

[0214] The display device 100 can be manufactured through the above process.

[0215] In this specification, devices fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. Furthermore, in this specification, devices fabricated without using a metal mask or FMM may be referred to as MML (Metal Maskless) structured devices.

[0216] In the method for manufacturing a display device with an MML structure as shown in Figures 8(A) to 13(C), the island-shaped EL layer 112 is not formed by a pattern on a metal mask, but rather by processing after depositing an EL film 112f over one surface. Similarly, the island-shaped PD layer 155 is not formed by a pattern on a metal mask, but rather by processing after depositing a PD film 155f over one surface.

[0217] As described above, a high-definition or high-aperture ratio display device and imaging device can be realized. Furthermore, a display device that has imaging capabilities and is high-definition or high-aperture ratio can be realized. In addition, since the EL layer 112 can be manufactured separately for each color, a display device that is extremely vivid, has high contrast, and has high display quality can be realized. Moreover, by providing a sacrificial layer on the EL layer 112 and the PD layer 155, the damage suffered by the EL layer 112 and the PD layer 155 during the manufacturing process of the display device 100 can be reduced, and the reliability of the light-emitting element 110 and the light-receiving element 150 can be improved.

[0218] Furthermore, the display device 100 can have a structure in which no insulating material is provided to cover the ends of the pixel electrodes. In other words, the device has a configuration in which no insulating layer is provided between the pixel electrodes provided on the light-emitting element 110 and the EL layer 112, and between the pixel electrodes provided on the light-receiving element 150 and the PD layer 155. This configuration allows for efficient extraction of light emitted from the EL layer 112 and enables high-sensitivity detection of light irradiated onto the PD layer 155.

[0219] The display device 100 can efficiently extract light emitted from the EL layer 112, thereby significantly reducing its viewing angle dependence. For example, in the display device 100, the viewing angle (the maximum angle at which a constant contrast ratio is maintained when viewing the screen from an oblique direction) can be set to a range of 100° or more and less than 180°, preferably 150° or more and 170° or less. The above viewing angle can be applied to both the vertical and horizontal directions. By using a display device according to one aspect of the present invention, the viewing angle dependence is improved, and the visibility of the image can be enhanced.

[0220] Furthermore, if the display device 100 uses a fine metal mask (FMM) structure, there may be limitations on the pixel arrangement configuration, for example. The FMM structure will be explained below.

[0221] When forming a display device with an FMM structure, a metal mask (FMM) with openings is set opposite the substrate so that the EL material or PD material is deposited in the desired area during EL deposition and PD deposition. Subsequently, EL deposition or PD deposition is performed through the FMM to deposit the EL material or PD material in the desired area. As the area of ​​the substrate on which EL and PD are deposited increases, the area of ​​the FMM also increases, and so does the weight of the FMM. In addition, the FMM may deform because heat is applied to it during EL deposition and PD deposition. For example, there are methods that apply a certain tension to the FMM during EL deposition or PD deposition, so the weight and strength of the FMM are important parameters.

[0222] Therefore, when designing the pixel arrangement configuration of an FMM structure display device, it is necessary to consider the above parameters, for example, and to consider them under certain limitations. On the other hand, a display device according to one aspect of the present invention has an MML structure, and therefore offers superior effects compared to the FMM structure, such as a higher degree of freedom in the pixel arrangement configuration. Furthermore, because the MML structure offers a higher degree of design freedom than the FMM structure, it is highly compatible with flexible devices, for example.

[0223] Figures 14(A) and 14(B) are schematic cross-sectional diagrams showing an example of a method for manufacturing a display device 100 in which the light-emitting element 110 and the light-receiving element 150 are configured as shown in Figure 2(A), and the connection part 130 is configured as shown in Figure 6(A).

[0224] First, the same process as in Figures 8(A) to 12(D) is performed. Next, the transparent electrode 113a is formed using the same method as described in Figure 13(A) (Figure 14(A)).

[0225] Next, the semi-transparent / semi-reflective electrode 113b is formed using FMM151a (Figure 14(B)). For example, the semi-transparent / semi-reflective electrode 113b is formed by vacuum deposition via FMM151a or by sputtering. Alternatively, the semi-transparent / semi-reflective electrode 113b may be formed using an inkjet method. Figure 14(B) shows the film formation process using the so-called face-down method, where the substrate is inverted so that the surface to be formed is facing downwards.

[0226] Next, a protective layer 121 is formed using the same method as described in Figure 13(C). The display device 100 can be manufactured through these steps.

[0227] Figures 15(A) to 15(D) are schematic cross-sectional diagrams showing a method for manufacturing a display device 100 in which the light-emitting element 110 and the light-receiving element 150 are configured as shown in Figure 4(B), and the connection part 130 is configured as shown in Figure 6(A).

[0228] First, the same process as in Figures 8(A) to 12(D) is performed (Figure 15(A)). Next, a transparent electrode 113a is formed using FMM151b (Figure 15(B)). Then, a semi-transparent / semi-reflective electrode 113b is formed using FMM151a (Figure 15(C)). For example, the transparent electrode 113a is formed by vacuum deposition or sputtering via FMM151b, and the semi-transparent / semi-reflective electrode 113b is formed by vacuum deposition or sputtering via FMM151a. Alternatively, the transparent electrode 113a and the semi-transparent / semi-reflective electrode 113b may be formed using an inkjet method. Figures 15(B) and 15(C) show the film formation process using the face-down method. Alternatively, the transparent electrode 113a and the semi-transparent / semi-reflective electrode 113b may be formed using photolithography.

[0229] Subsequently, a protective layer 121 is formed using the same method as described in Figure 13(C) (Figure 15(D)). The display device 100 can then be manufactured through these steps.

[0230] Figures 16(A) to 19(D) are schematic cross-sectional diagrams showing a method for manufacturing a display device 100 in which the light-emitting element 110 and the light-receiving element 150 are configured as shown in Figure 4(D), and the connection part 130 is configured as shown in Figure 6(B).

[0231] First, electrodes 111R, 111G, 111B, 111S, 111C, optical adjustment layer 116R, optical adjustment layer 116G, optical adjustment layer 116B, and EL film 112Rf are formed using the same method as described in Figures 8(A) and 8(B). As mentioned above, the region containing electrode 111C can be shielded with a metal mask to form the EL film 112Rf.

[0232] Next, an organic film 114Rf, which will later become the organic layer 114R, is formed on the EL film 112Rf. The organic film 114Rf can be formed in the same manner as the EL film 112Rf. Furthermore, the organic film 114Rf can be formed using the same apparatus as the EL film 112Rf. For example, the EL film 112Rf has a structure in which a hole injection layer, a hole transport layer, an emissive layer, and an electron transport layer are stacked in this order from the electrode 111 side, and the organic film 114Rf has an electron injection layer. Alternatively, the EL film 112Rf has a structure in which an electron injection layer, an electron transport layer, an emissive layer, and a hole transport layer are stacked in this order from the electrode 111 side, and the organic film 114Rf has a hole injection layer.

[0233] Next, sacrificial films 144Ra and 144Rb are formed on the organic film 114Rf, on the electrode 111C, and on the layer 101 containing the transistor, using the same method as described in Figure 8(B). Subsequently, a resist mask 143a is formed using the same method as described in Figure 8(B) (Figure 16(A)).

[0234] Next, sacrificial layers 145Rb and 145Ra are formed using the same method as described in Figures 8(B) and 8(C), and the resist mask 143a is removed. Subsequently, a portion of the organic film 114Rf not covered by the sacrificial layer 145Ra is removed by etching to form island-shaped or strip-shaped organic layers 114R. Etching of the organic film 114Rf can be performed using the same method as etching of the EL film 112Rf.

[0235] Next, the EL layer 112R is formed using the same method as described in Figures 8(C) and 8(D) (Figure 16(B)). Then, the EL film 112Gf is formed, and the organic film 114Gf is formed on the EL film 112Gf. For details on the formation of the EL film 112Gf and the organic film 114Gf, please refer to the descriptions of the formation of the EL film 112Rf and the organic film 114Rf.

[0236] Subsequently, a sacrificial film 144Ga is formed on the organic film 114Gf, and a sacrificial film 144Gb is formed on the sacrificial film 144Ga. Then, a resist mask 143b is formed on the sacrificial film 144Gb (Fig. 16(C)). For the formation of the sacrificial film 144Ga, the sacrificial film 144Gb, and the resist mask 143b, etc., the descriptions of the formation of the sacrificial film 144Ra, the sacrificial film 144Rb, and the resist mask 143a, etc. can be referred to respectively.

[0237] Subsequently, a sacrificial layer 145Gb, a sacrificial layer 145Ga, an organic layer 114G, and an EL layer 112G are formed. Also, the resist mask 143b is removed (Fig. 16(D)). For the formation of the sacrificial layer 145Gb, the sacrificial layer 145Ga, the organic layer 114G, and the EL layer 112G, and the removal of the resist mask 143b, etc., the descriptions of the formation of the sacrificial layer 145Rb, the sacrificial layer 145Ra, the organic layer 114R, and the EL layer 112R, and the removal of the resist mask 143a, etc. can be referred to respectively.

[0238] Subsequently, an EL film 112Bf is formed, and an organic film 114Bf is formed on the EL film 112Bf. For the formation of the EL film 112Bf and the organic film 114Bf, etc., the descriptions of the formation of the EL film 112Rf and the organic film 114Rf, etc. can be referred to.

[0239] Subsequently, a sacrificial film 144Ba is formed on the organic film 114Bf, and a sacrificial film 144Bb is formed on the sacrificial film 144Ba. Then, a resist mask 143c is formed on the sacrificial film 144Bb (Fig. 17(A)). For the formation of the sacrificial film 144Ba, the sacrificial film 144Bb, and the resist mask 143c, etc., the descriptions of the formation of the sacrificial film 144Ra, the sacrificial film 144Rb, and the resist mask 143a, etc. can be referred to respectively.

[0240] Next, sacrificial layers 145Bb, 145Ba, organic layer 114B, and EL layer 112B are formed. Then, the resist mask 143c is removed (Figure 17(B)). For details on the formation of sacrificial layers 145Bb, 145Ba, organic layer 114B, and EL layer 112B, and the removal of resist mask 143c, refer to the descriptions for the formation of sacrificial layer 145Rb, 145Ra, organic layer 114R, and EL layer 112R, and the removal of resist mask 143a, respectively.

[0241] Next, the PD film 155f, sacrificial film 144Sa, sacrificial film 144Sb, and resist mask 143d are formed using the same method as described in Figure 11(A) (Figure 17(C)). Here, since the photodetector does not need to have an electron injection layer and a hole injection layer, it is not necessary to deposit an organic film having an electron injection layer or a hole injection layer between the PD film 155f and the sacrificial film 144Sa.

[0242] Next, the sacrificial layer 145Sb, the sacrificial layer 145Sa, and the PD layer 155 are formed using the same method as described in Figures 11(A) to 11(C). The resist mask 143d is then removed (Figure 17(D)). Subsequently, the insulating layer 126 and the insulating layer 125 are formed using the same method as described in Figures 12(A) and 12(B) (Figure 18(A)).

[0243] Next, the sacrificial layers 145Sb and 145Sa, and the sacrificial layers 145Rb and 145Ra on the electrode 111C are removed (Figure 18(B)). This removal can be performed, for example, using photolithography. This removal exposes the upper surface of the PD layer 155 and the upper surface of the electrode 111C.

[0244] Next, a conductive film 113af, which will later become the transparent electrode 113a, is formed on the PD layer 155, the electrode 111C, the insulating layer 125, the insulating layer 126, the sacrificial layer 145Rb, the sacrificial layer 145Gb, and the sacrificial layer 145Bb. The conductive film 113af can be formed by the same method as the method for forming the transparent electrode 113a described in Figure 13(A). The conductive film 113af can be described as a transparent film.

[0245] Next, a resist mask 149b is formed on the conductive film 113af (Figure 18(C)). Similar to resist masks 143a to 143d and resist mask 149a, the resist mask 149b can be made of a resist material containing a photosensitive resin, such as a positive-type resist material or a negative-type resist material.

[0246] Next, the portion of the conductive film 113af not covered by the resist mask 149b is removed by etching to form island-shaped or strip-shaped transparent electrodes 113a. This forms transparent electrodes 113a on the PD layer 155 and transparent electrodes 113a on the electrode 111C.

[0247] Next, the resist mask 149b is removed (Figure 19(A)). The resist mask 149b can be removed by plasma ashing, similar to the resist masks 143a to 143d and the resist mask 149a.

[0248] Next, sacrificial layers 145Rb, 145Gb, 145Bb, 145Ra, 145Ga, and 145Ba are removed using the same method as described in Figures 12(B) and 12(C) (Figure 19(B)). This exposes the upper surfaces of organic layers 114R, 114G, and 114B.

[0249] Next, a semi-transparent / semi-reflective electrode 113b is formed using the same method as described in Figure 15(C) (Figure 19(C)). Then, a protective layer 121 is formed using the same method as described in Figure 13(C) (Figure 19(D)). The display device 100 can be manufactured through these steps.

[0250] Figures 20(A) to 20(C) are schematic cross-sectional diagrams showing an example of a method for manufacturing a display device 100, in which the light-emitting element 110 and the light-receiving element 150 are configured as shown in Figure 5(A), and the connection part 130 is configured as shown in Figure 6(G).

[0251] First, the same process as in Figures 8(A) to 12(D) is performed (Figure 20(A)). Next, the semi-transparent / semi-reflective electrode 113b is formed using FMM151a (Figure 20(B)). For example, the semi-transparent / semi-reflective electrode 113b is formed by vacuum deposition via FMM151a or by sputtering. Alternatively, the semi-transparent / semi-reflective electrode 113b may be formed using an inkjet method. Figure 20(B) shows the film formation process using the face-down method. The semi-transparent / semi-reflective electrode 113b may also be formed using photolithography.

[0252] Next, a transparent electrode 113a is formed using the same method as described in Figure 13(A). Then, a protective layer 121 is formed using the same method as described in Figure 13(C) (Figure 20(C)). The display device 100 can be manufactured through these steps.

[0253] Figures 21(A) to 21(D), 22(A), and 22(B) are schematic cross-sectional diagrams showing an example of a method for manufacturing a display device 100 in which the light-emitting element 110 and the light-receiving element 150 are configured as shown in Figure 5(C), and the connection part 130 is configured as shown in Figure 6(G).

[0254] First, the same process as in Figures 8(A) to 12(B) is performed (Figure 21(A)). Next, sacrificial layers 145Rb, 145Gb, 145Bb, 145Ra, 145Ga, and 145Ba are removed (Figure 21(B)). This removal can be performed, for example, using photolithography. This removal exposes the top surfaces of EL layer 112R, EL layer 112G, EL layer 112B, and electrode 111C. Here, sacrificial layers 145Sb and 145Sa are not removed.

[0255] Subsequently, a conductive film 113bf and a resist mask 149a are formed by the same method as described in FIG. 13(A) (FIG. 21(C)). Thereafter, a semi-transmissive / semi-reflective electrode 113b is formed and the resist mask 149a is removed by the same method as described in FIGS. 13(A) and 13(B) (FIG. 21(D)).

[0256] Subsequently, a sacrificial layer 145Sb and a sacrificial layer 145Sa are removed by the same method as described in FIGS. 12(B) and 12(C) (FIG. 22(A)). As a result, the upper surface of the PD layer 155 is exposed.

[0257] Subsequently, a transparent electrode 113a is formed by the same method as described in FIG. 13(A). Thereafter, a protective layer 121 is formed by the same method as described in FIG. 13(C) (FIG. 22(B)). The display device 100 can be manufactured through the above steps.

[0258] FIG. 23(A) is a schematic cross-sectional view showing an example of a method for manufacturing a display device 100 in which the light-emitting element 110 and the light-receiving element 150 have the configuration shown in FIG. 5(E) and the connection portion 130 has the configuration shown in FIG. 6(G).

[0259] First, the steps up to the step shown in FIG. 22(A) are performed. Next, a transparent electrode 113a is formed using the FMM 151b by the same method as described in FIG. 15(B) (FIG. 23(A)). As described above, the transparent electrode 113a can be formed using a vacuum evaporation method, a sputtering method, an inkjet method, or the like.

[0260] ​​​​​​​ After performing the steps shown in Figure 22(A), a conductive film 113af is formed on the PD layer 155 and on the semi-transparent / semi-reflective electrode 113b. The conductive film 113af can be formed by the same method as the method for forming the transparent electrode 113a described in Figure 13(A).

[0263] Next, a resist mask 149b is formed on the conductive film 113af (Figure 23(B1)). Then, a transparent electrode 113a is formed and the resist mask 149b is removed using the same method as described in Figures 18(C) and 19(A) (Figure 23(B2)).

[0264] Subsequently, a protective layer 121 is formed using the same method as described in Figure 13(C). The display device 100 can be manufactured through these steps.

[0265] [Configuration Example 2] Figure 24(A) shows a modified version of the configuration shown in Figure 2(A). Figure 24(A) shows an example configuration in which a protective layer 123 is provided on the protective layer 121, and a colored layer 185 is provided on the protective layer 123 such that it overlaps with the PD layer 155.

[0266] In this specification, the colored layer may be referred to as a color filter.

[0267] The colored layer 185 has a higher transmittance of light of a specific wavelength than other wavelengths. Therefore, by providing the colored layer 185 to have an overlapping region with the PD layer 155, it is possible to suppress the irradiation of the PD layer 155 with light other than the specific wavelength. As a result, the display device 100 can perform imaging with high sensitivity.

[0268] The protective layer 123 is preferably flattened. This allows the colored layer 185 to be formed on a flat surface, making it easier to form the colored layer 185. However, the protective layer 123 is not required. In this case, the colored layer 185 can be provided, for example, in contact with the protective layer 121.

[0269] The protective layer 123 may have an insulating layer. This insulating layer may be an inorganic insulating layer or an organic insulating layer, similar to other insulating layers in the display device 100. Alternatively, it may have a laminated structure of an inorganic insulating layer and an organic insulating layer.

[0270] Figure 24(B) shows a modified configuration of the one shown in Figure 2(A). The display device 100 shown in Figure 24(B) is provided with an element 110W instead of the element 110R, element 110G, and element 110B. The element 110W has an EL layer 112W that emits white light.

[0271] The EL layer 112W can be configured, for example, as a tandem configuration in which two or more light-emitting layers are stacked, with their respective light-emitting colors being complementary. Alternatively, the EL layer 112W may be a stacked type EL layer with a charge-generating layer sandwiched between the light-emitting layers.

[0272] Furthermore, a protective layer 123 is provided on the protective layer 121, and colored layers 184R, 184G, and 184B are provided on the protective layer 123 so as to have an area that overlaps with the light-emitting element 110W. For example, the colored layer 184R has a higher transmittance in the red wavelength range than the transmittance in other wavelength ranges, the colored layer 184G has a higher transmittance in the green wavelength range than the transmittance in other wavelength ranges, and the colored layer 184B has a higher transmittance in the blue wavelength range than the transmittance in other wavelength ranges. As a result, even if the light emitted by the light-emitting element 110W is white, the display device 100 can display a color image.

[0273] Here, even if the display device 100 has a colored layer 184R, a colored layer 184G, and a colored layer 184B, it is preferable that the light-emitting element 110 has an optical adjustment layer 116. In other words, it is preferable to apply a microcavity structure to the light-emitting element 110W. This makes it possible to make the light emitted by the light-emitting element 110W toward the colored layer 184 light with increased intensity in a specific wavelength range. For example, the light emitted by the light-emitting element 110W having a region overlapping with the colored layer 184R can be made into light with increased intensity in the red wavelength range. Also, the light emitted by the light-emitting element 110W having a region overlapping with the colored layer 184G can be made into light with increased intensity in the green wavelength range. Furthermore, the light emitted by the light-emitting element 110W having a region overlapping with the colored layer 184B can be made into light with increased intensity in the blue wavelength range.

[0274] For example, the colored layer 184R may not completely block light outside the red wavelength range, the colored layer 184G may not completely block light outside the green wavelength range, and the colored layer 184B may not completely block light outside the blue wavelength range. Therefore, by applying a microcavity structure to the light-emitting element 110W, the color purity of the light transmitted through the colored layer 184 can be improved.

[0275] Figure 24(C) shows an example in which the display device 100 shown in Figure 24(B) is provided with the colored layer 185 shown in Figure 24(A). In other words, the display device 100 shown in Figure 24(C) has both the colored layer 184 and the colored layer 185.

[0276] Figure 25(A) shows a modified configuration of the one shown in Figure 24(C), illustrating an example of a configuration having an overlapping region of adjacent colored layers. In Figure 25(A), the overlapping region of the colored layers is indicated by a dotted line. The overlapping region of adjacent colored layers can be provided, for example, on the insulating layer 126.

[0277] By overlapping adjacent colored layers, it is possible to create a region where colored layers that transmit light of different colors overlap. This region of the colored layer can function as a light-shielding layer. Therefore, it is possible to suppress the leakage of light emitted by the light-emitting element 110 to adjacent sub-pixels. For example, it is possible to suppress the incidence of light emitted by the light-emitting element 110W that overlaps with the colored layer 184R onto the colored layer 184G. Therefore, the contrast of the image displayed on the display device 100 can be increased, and a display device with high display quality can be realized.

[0278] Figure 25(B) shows a modified version of the configuration shown in Figure 24(B), in which the colored layer 184 is not provided.

[0279] The EL layer 112W of the light-emitting element 110W shown in Figure 25(B) has the function of emitting white light. However, because the light-emitting element 110W employs a microcavity structure, the light emitted by the light-emitting element 110W can be made into light with increased intensity in a specific wavelength range. For example, the light emitted by the light-emitting element 110W having an optical adjustment layer 116R can be made into light with increased intensity in the red wavelength range. Similarly, the light emitted by the light-emitting element 110W having an optical adjustment layer 116G can be made into light with increased intensity in the green wavelength range. Furthermore, the light emitted by the light-emitting element 110W having an optical adjustment layer 116B can be made into light with increased intensity in the blue wavelength range. Therefore, in a display device having the light-emitting element 110W instead of the light-emitting elements 110R, 110G, and 110B, a color image can be displayed even without the coloring layers 184R, 184G, and 184B. On the other hand, by applying a microcavity structure to the light-emitting element 110W and further providing a colored layer 184 on the light-emitting element 110W, the display device 100 can be made into a display device with a high contrast ratio.

[0280] Figure 25(C) shows a modified configuration of the one shown in Figure 2(A), in which a protective layer 123 is provided on the protective layer 121, and a microlens array 167 is provided on the protective layer 123. The microlens array 167 can sometimes focus the light emitted by the light-emitting element 110. Focusing the light emitted by the light-emitting element 110 allows the user of the display device 100 to see a bright image, especially when viewing the display unit of the display device 100 from the front. In addition, the microlens array 167 can focus the light irradiated onto the light-receiving element 150. As a result, the display device 100 can perform imaging with high sensitivity.

[0281] Figure 26(A) shows a modified configuration of the one shown in Figure 2(A), illustrating an example in which an insulating layer 171 is provided between adjacent light-emitting elements 110 and light-receiving elements 150, and between two adjacent light-emitting elements 110. The insulating layer 171 is provided so as to cover the ends of the electrodes 111 and the ends of the optical adjustment layer 116. An insulating layer 125 is provided on the insulating layer 171, and an insulating layer 126 is provided on the insulating layer 125. Furthermore, the region of the EL layer 112 that does not come into contact with the optical adjustment layer 116 is provided on the insulating layer 171, and the region of the PD layer 155 that does not come into contact with the electrode 111S is provided on the insulating layer 171. Therefore, around the end of the optical adjustment layer 116, there is a region where the insulating layer 171 is provided between the optical adjustment layer 116 and the EL layer 112. Also, around the end of the electrode 111S, there is a region where the insulating layer 171 is provided between the electrode 111S and the PD layer 155.

[0282] By providing an insulating layer 171 so as to cover the ends of the electrodes 111, short circuits between adjacent electrodes 111 can be prevented. Preferably, the ends of the insulating layer 171 are tapered. Furthermore, by using an organic material, such as an organic resin, for the insulating layer 171, its corners can be made into gentle curves. This improves the coverage of the layer provided on top of the insulating layer 171. Additionally, the insulating layer 171 can have a flattened upper surface.

[0283] Examples of organic materials that can be used for the insulating layer 171 include acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimidoamide resin, polysiloxane resin, benzocyclobutene resin, and phenolic resin.

[0284] Figure 26(B) shows a modified configuration of the one shown in Figure 26(A), in which the corners of the insulating layer 171 are angular and the upper surface of the insulating layer 171 is not flattened. For example, an inorganic material can be used for the insulating layer 171 shown in Figure 26(B).

[0285] Inorganic materials that can be used for the insulating layer 171 include silicon oxide, aluminum oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, tantalum oxide, silicon nitride, aluminum nitride, silicon oxide nitride, aluminum oxide nitride, silicon nitride, and aluminum oxide nitride.

[0286] Figure 26(C) is a schematic cross-sectional view corresponding to the dashed line A1-A2 in Figure 1, and shows an example of the configuration of the light-emitting element 110R, light-emitting element 110G, light-emitting element 110B, and light-receiving element 150. Similar to Figure 2(A), the light-emitting element 110 and the light-receiving element 150 are provided on a layer 101 that includes a transistor.

[0287] The light-emitting element 110R includes an electrode 111R, an optical adjustment layer 116R on the electrode 111R, an EL layer 112R on the optical adjustment layer 116R, an organic layer 114R on the EL layer 112R, a transparent electrode 113a on the organic layer 114R, and a semi-transparent / semi-reflective electrode 113b on the transparent electrode 113a. The light-emitting element 110G includes an electrode 111G, an optical adjustment layer 116G on the electrode 111G, an EL layer 112G on the optical adjustment layer 116G, an organic layer 114G on the EL layer 112G, a transparent electrode 113a on the organic layer 114G, and a semi-transparent / semi-reflective electrode 113b on the transparent electrode 113a. The light-emitting element 110B includes an electrode 111B, an optical adjustment layer 116B on the electrode 111B, an EL layer 112B on the optical adjustment layer 116B, an organic layer 114B on the EL layer 112B, a transparent electrode 113a on the organic layer 114B, and a semi-transparent / semi-reflective electrode 113b on the transparent electrode 113a. The light-receiving element 150 includes an electrode 111S, a PD layer 155 on the electrode 111S, and a transparent electrode 113a on the PD layer 155. A protective layer 121 is provided to cover the light-emitting elements 110R, 110G, 110B, and 150. Insulating layers 125 and 126 are not provided.

[0288] An EL layer 112, a PD layer 155, a transparent electrode 113a, a semi-transparent / semi-reflective electrode 113b, and a protective layer 121 are provided on the insulating layer 171. Here, the EL layer 112, the PD layer 155, and the transparent electrode 113a can be provided so that they have a region in contact with the insulating layer 171. A cavity may be provided between the insulating layer 171 and the transparent electrode 113a. In this case, the transparent electrode 113a can be configured not to be in contact with the insulating layer 171.

[0289] [Example of manufacturing method 2] Figures 27(A) to 28(B) are schematic cross-sectional diagrams showing examples of manufacturing methods for a display device 100 in which the light-emitting element 110 and the light-receiving element 150 are configured as shown in Figure 26(C). Here, Figures 27(A) to 28(B) also show examples of manufacturing methods for the connection part 130, specifically schematic cross-sectional diagrams corresponding to the dashed line B1-B2 in Figure 1.

[0290] First, the electrode 111 and the optical adjustment layer 116 are formed using the same method as described in Figure 8(A). Next, an insulating layer 171 is formed to cover the ends of the electrode 111 and the ends of the optical adjustment layer 116 (Figure 27(A)). For example, the insulating layer 171 can be formed by depositing a film to be the insulating layer 171 and then processing the film. The film to be the insulating layer 171 can be deposited by, for example, spin coating, spray coating, screen printing, CVD, sputtering, or vacuum deposition. The film to be the insulating layer 171 can be processed by, for example, photolithography.

[0291] Next, the EL layer 112R and the organic layer 114R are formed using FMM153a (Figure 27(B)). For example, the EL layer 112R and the organic layer 114R are formed by vacuum deposition via FMM153a or by sputtering. Alternatively, the EL layer 112R and the organic layer 114R may be formed using an inkjet method. Figure 27(B) shows the film formation process using the so-called face-down method, where the substrate is inverted so that the surface to be formed is facing downwards. Here, the EL layer 112R and the organic layer 114R can be formed using the same apparatus.

[0292] Next, the EL layer 112G and the organic layer 114G are formed using FMM153b (Figure 27(C)). The EL layer 112G and the organic layer 114G can be formed in the same manner as the EL layer 112R and the organic layer 114R. Similarly, the EL layer 112B and the organic layer 114B are formed using FMM153c (Figure 27(D)).

[0293] Next, the PD layer 155 is formed using FMM153d (Figure 28(A)). For example, the PD layer 155 can be formed by vacuum deposition via FMM153d or by sputtering. Alternatively, the PD layer 155 may be formed using an inkjet method.

[0294] Next, transparent electrodes 113a are formed on the organic layer 114R, organic layer 114G, organic layer 114B, PD layer 155, electrode 111C, and insulating layer 171 using the same method as described in Figure 13(A). Then, semi-transparent / semi-reflective electrodes 113b are formed using the same method as described in Figures 13(A) and 13(B), or in Figures 14(A) and 14(B). After that, a protective layer 121 is formed using the same method as described in Figure 13(C). The display device 100 can be manufactured by these steps.

[0295] As described above, the display device 100 shown in Figure 26(C) can have its EL layer 112, organic layer 114, and PD layer 155 formed using an FMM. Here, by providing an insulating layer 171 on the display device 100, contact of the FMM with the electrodes 111 and the optical adjustment layer 116 can be prevented. Note that even when manufacturing the display device 100 shown in Figure 26(C), the EL layer 112 and PD layer 155 may be formed using photolithography. Also, when manufacturing a display device 100 other than that shown in Figure 26(C), the EL layer 112 and PD layer 155 may be formed using an FMM.

[0296] In this embodiment, the light-emitting element 110 has been described as an EL element, but the present invention is not limited to this. For example, the light-emitting element 110 may be an LED such as a micro-LED. Alternatively, a liquid crystal element may be provided instead of the light-emitting element 110, and the display device may use the liquid crystal element to perform the display.

[0297] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0298] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0299] (Embodiment 2) In this embodiment, a display device according to one aspect of the present invention will be described with reference to the drawings.

[0300] A display device according to one aspect of the present invention can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices having relatively large screens, such as television equipment, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal information terminals, and sound playback devices.

[0301] Furthermore, a display device according to one aspect of the present invention can be a high-definition display device. Therefore, the display device of this embodiment can be used, for example, as a display unit for information terminals (wearable devices) such as wristwatches and bracelets, and as a display unit for wearable devices that can be worn on the head, such as VR devices such as head-mounted displays and AR devices such as glasses.

[0302] [Display Module 1] Figure 29 shows a perspective view of the display device 100, and Figure 30(A) shows a cross-sectional view of the display device 100.

[0303] The display device 100 has a configuration in which substrate 152 and substrate 151 are bonded together. In Figure 29, substrate 152 is clearly indicated by a dashed line.

[0304] The display device 100 includes a display unit 162, a connection unit 130, a circuit unit 164, and wiring 165, etc. Figure 29 shows an example in which IC 173 and FPC 172 are mounted on the display device 100. Therefore, the configuration shown in Figure 29 can also be called a display module having a display device 100, an IC (integrated circuit), and an FPC. Here, a display module is defined as a display device with a connector such as an FPC attached to its substrate, or a substrate on which an IC is mounted.

[0305] The connection portion 130 is provided on the outside of the display unit 162. The connection portion 130 can be provided along one or more sides of the display unit 162. There may be one or more connection portions 130. Figure 29 shows an example in which the connection portion 130 is provided so as to surround all four sides of the display unit 162. At the connection portion 130, the common electrode of the light-emitting element and the conductive layer are electrically connected, and a potential can be supplied to the common electrode.

[0306] For example, a scan line drive circuit can be used as the circuit section 164.

[0307] Wiring 165 has the function of supplying signals and power to the display unit 162 and the circuit unit 164. These signals and power are input to wiring 165 from an external source via FPC 172 or from IC 173.

[0308] Figure 29 shows an example in which IC 173 is provided on the substrate 151 using the COG method or COF (Chip On Film) method, etc. IC 173 can be an IC having, for example, a scan line drive circuit or a signal line drive circuit. Note that the display device 100 and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC, for example, using the COF method.

[0309] Figure 30(A) shows an example of a cross-section of the display device 100 when a portion of the area including the FPC 172, a portion of the circuit section 164, a portion of the display section 162, a portion of the connection section 130, and a portion of the area including the end are cut.

[0310] The display device 100 shown in Figure 30(A) has a transistor 201, a transistor 205, a light-emitting element 110, and a light-receiving element 150, etc., between substrates 151 and 152.

[0311] The light-emitting element 110 and the light-receiving element 150 can have the configurations shown in Figure 2(A), etc., except that the pixel electrode configuration differs. For details of the light-emitting element 110 and the light-receiving element 150, refer to Embodiment 1. An insulating layer 125 and an insulating layer 126 on the insulating layer 125 are provided between adjacent light-emitting elements 110 and light-receiving elements 150. In addition, although not shown in Figure 30(A), an insulating layer 125 and an insulating layer 126 on the insulating layer 125 are also provided between two adjacent light-emitting elements 110.

[0312] The light-emitting element 110 includes a conductive layer 124, a conductive layer 127 on the conductive layer 124, an optical adjustment layer 116 on the conductive layer 127, an EL layer 112 on the optical adjustment layer 116, an organic layer 114 on the EL layer 112, a transparent electrode 113a on the organic layer 114, and a semi-transparent / semi-reflective electrode 113b on the transparent electrode 113a. The light-receiving element 150 includes a conductive layer 124, a conductive layer 127 on the conductive layer 124, a PD layer 155 on the conductive layer 127, an organic layer 114 on the PD layer 155, and a transparent electrode 113a on the organic layer 114. Here, the electrode 111 is formed by the conductive layer 124 and the conductive layer 127.

[0313] The conductive layer 124 is connected to the conductive layer 222b of the transistor 205 through openings provided in the insulating layers 214, 215, and 213. A recess is formed in the conductive layer 124 so as to cover the openings provided in the insulating layers 214, 215, and 213. Layer 128 is embedded in this recess.

[0314] Layer 128 has the function of flattening the recesses of the conductive layer 124. A conductive layer 127 is provided on the conductive layer 124 and layer 128, which is electrically connected to the conductive layer 124. Therefore, the region overlapping with the recesses of the conductive layer 124 can also be used as a light-emitting region, thereby increasing the aperture ratio of the pixel.

[0315] Layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used for layer 128 as appropriate. In particular, it is preferable that layer 128 be formed using an insulating material.

[0316] As layer 128, an insulating layer having an organic material can be suitably used. For example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used as layer 128. Alternatively, a photosensitive resin can be used as layer 128. The photosensitive resin can be a positive-type material or a negative-type material.

[0317] By using a photosensitive resin, layer 128 can be fabricated using only exposure and development processes, thereby reducing the impact on the surface of the conductive layer 124 due to dry etching or wet etching. Furthermore, by forming layer 128 using a negative-type photosensitive resin, it may be possible to form layer 128 using the same photomask (exposure mask) used to form the openings of the insulating layer 214.

[0318] A protective layer 121 is provided on the light-emitting element 110 and the light-receiving element 150. The protective layer 121 and the substrate 152 are bonded together via an adhesive layer 142. A solid encapsulation structure or a hollow encapsulation structure can be applied to encapsulate the light-emitting element 110 and the light-receiving element 150. In Figure 30(A), the space between the substrate 152 and the protective layer 121 is filled with the adhesive layer 142, indicating a solid encapsulation structure. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), indicating a hollow encapsulation structure. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting element 110 and the light-receiving element 150. Furthermore, the space may be filled with a resin different from the adhesive layer 142, which is provided in a frame shape.

[0319] In the connection portion 130, an electrode 111C is provided on the insulating layer 214. Figure 30(A) shows an example in which the electrode 111C has a laminated structure consisting of a conductive layer obtained by processing the same conductive film as the conductive layer 124 and a conductive layer obtained by processing the same conductive film as the conductive layer 127. An organic layer 114 is provided on the electrode 111C, and a transparent electrode 113a and a semi-transparent / semi-reflective electrode 113b are provided on the organic layer 114. Electrode 111C and transparent electrode 113a are electrically connected via the organic layer 114. Note that the organic layer 114 does not necessarily have to be formed in the connection portion 130. In this case, electrode 111C and transparent electrode 113a are in direct contact and electrically connected.

[0320] The display device 100 shown in Figure 30(A) is a top-emission type. The light L emitted by the light-emitting element 110 is emitted towards the substrate 152. The light L irradiated onto the light-receiving element 150 is irradiated onto the PD layer 155 from the substrate 152 side. It is preferable to use a material with high transmittance to visible light for the substrate 152.

[0321] The laminated structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 containing the transistor in Embodiment 1.

[0322] Both transistors 201 and 205 are formed on the substrate 151. These transistors can be manufactured using the same materials and the same process.

[0323] On the substrate 151, insulating layers 211, 213, 215, and 214 are provided in this order. A portion of insulating layer 211 functions as a gate insulating layer for each transistor. A portion of insulating layer 213 functions as a gate insulating layer for each transistor. Insulating layer 215 is provided covering the transistors. Insulating layer 214 is provided covering the transistors and functions as a planarization layer. The number of gate insulating layers and insulating layers covering the transistors are not limited and may be a single layer or two or more layers, respectively.

[0324] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0325] It is preferable to use inorganic insulating films for insulating layer 211, insulating layer 213, and insulating layer 215. Examples of inorganic insulating films that can be used include silicon nitride film, silicon oxynitride film, silicon oxide film, silicon nitride oxide film, aluminum oxide film, or aluminum nitride film. Alternatively, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, or neodymium oxide film may be used. Furthermore, two or more of the above insulating films may be laminated together.

[0326] An organic insulating layer is preferred for the insulating layer 214, which functions as a planarizing layer. Examples of materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This makes it possible to suppress the formation of recesses in the insulating layer 214 when processing the conductive layer 124 or conductive layer 127. Alternatively, recesses may be provided in the insulating layer 214 when processing the conductive layer 124 or conductive layer 127.

[0327] Transistors 201 and 205 have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as source and drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0328] The transistor structure of the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, or an inverse staggered transistor can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0329] Transistors 201 and 205 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0330] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors having a crystalline region in part) may be used. Using a crystalline semiconductor is preferable because it can suppress the degradation of transistor characteristics.

[0331] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region.

[0332] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0333] Alternatively, a transistor using silicon as the channel-forming region (Si transistor) may be used. Examples of silicon include single-crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low-temperature polysilicon (LTPS) in the semiconductor layer (hereinafter also referred to as an LTPS transistor) can be used. LTPS transistors have high field-effect mobility and good frequency characteristics.

[0334] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (e.g., source driver circuits) can be fabricated on the same board as the display unit. This simplifies the external circuits implemented in the display device, reducing component and mounting costs.

[0335] OS transistors have extremely high field-effect mobility compared to transistors using amorphous silicon. Furthermore, OS transistors exhibit remarkably low source-drain leakage current (hereinafter also referred to as off-current) in the off state, allowing them to retain charge stored in a capacitor connected in series with the transistor for extended periods. Additionally, the application of OS transistors can reduce the power consumption of display devices.

[0336] Furthermore, the off-current value of an OS transistor per 1 μm channel width at room temperature is 1 aA (1 × 10⁻¹⁰). -18 A) Below, 1zA(1×10 -21 A) Less than or equal to, or 1yA(1×10 -24 A) It can be less than or equal to the following. Note that the off-current value of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1 × 10⁻¹⁰). -15A) More than 1pA (1×10 -12 A) The answer is as follows. Therefore, it can be said that the off-current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0337] Furthermore, to increase the luminescence brightness of the light-emitting elements included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting elements. To achieve this, it is necessary to increase the source-drain voltage of the drive transistor, which controls the amount of current flowing through the light-emitting elements and is included in the pixel circuit. Compared to Si transistors, OS transistors have a higher breakdown voltage between the source and drain, so a higher voltage can be applied between the source and drain of an OS transistor. Therefore, by using an OS transistor as the drive transistor included in the pixel circuit, the amount of current flowing through the light-emitting elements can be increased, thereby increasing the luminescence brightness of the light-emitting elements.

[0338] Furthermore, when the transistor operates in the saturation region, OS transistors exhibit smaller changes in source-drain current in response to changes in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as driving transistors in the pixel circuit, the current flowing between the source and drain can be precisely controlled by changes in gate-source voltage, thereby allowing control of the current flowing to the light-emitting element. This allows for a wider range of tonal gradations in the pixel circuit.

[0339] Furthermore, in terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be supplied to the light-emitting element even if there are variations in the current-voltage characteristics of the light-emitting element. In other words, when operating in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting element.

[0340] By using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "suppression of black level distortion," "increase in luminous brightness," "multi-gradation," and "suppression of variations in the characteristics of light-emitting elements."

[0341] The semiconductor layer preferably comprises, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, it is preferable that M is one or more selected from aluminum, gallium, yttrium, and tin.

[0342] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide (also written as IAZO) containing indium (In), aluminum (Al), and zinc (Zn). Alternatively, it is preferable to use an oxide (also written as IAGZO) containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn).

[0343] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxides include compositions where In:M:Zn=1:1:1 or close to it, In:M:Zn=1:1:1.2 or close to it, In:M:Zn=2:1:3 or close to it, In:M:Zn=3:1:2 or close to it, In:M:Zn=4:2:3 or close to it, In:M:Zn=4:2:4.1 or close to it, In:M:Zn=5:1:3 or close to it, In:M:Zn=5:1:6 or close to it, In:M:Zn=5:1:7 or close to it, In:M:Zn=5:1:8 or close to it, In:M:Zn=6:1:6 or close to it, In:M:Zn=5:2:5 or close to it, and so on. Note that "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0344] For example, when describing an atomic ratio of In:Ga:Zn = 4:2:3 or a composition close to that, it includes cases where, when the atomic ratio of In is 4, the atomic ratio of Ga is between 1 and 3, and the atomic ratio of Zn is between 2 and 4. Also, when describing an atomic ratio of In:Ga:Zn = 5:1:6 or a composition close to that, it includes cases where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is between 5 and 7. Furthermore, when describing an atomic ratio of In:Ga:Zn = 1:1:1 or a composition close to that, it includes cases where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0345] The transistors in the circuit unit 164 and the transistors in the display unit 162 may have the same structure or different structures. The structures of the multiple transistors in the circuit unit 164 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in the display unit 162 may all be the same or there may be two or more different structures.

[0346] All of the transistors in the display unit 162 may be OS transistors, all of the transistors in the display unit 162 may be Si transistors, or some of the transistors in the display unit 162 may be OS transistors and the rest may be Si transistors.

[0347] For example, by using both LTPS transistors and OS transistors in the display unit 162, a display device with low power consumption and high driving capability can be realized. Furthermore, a configuration combining LTPS transistors and OS transistors is sometimes referred to as LTPO. A more preferable example is to use an OS transistor as a transistor that functions as a switch to control conduction and non-conduction between wires, and an LTPS transistor as a transistor that controls current.

[0348] For example, one of the transistors in the display unit 162 functions as a transistor for controlling the current flowing to the light-emitting element and can be called a drive transistor. One of the source and drain of the drive transistor is electrically connected to the pixel electrode of the light-emitting element. It is preferable to use an LTPS transistor for this drive transistor. This makes it possible to increase the current flowing to the light-emitting element in the pixel circuit.

[0349] On the other hand, the other transistor in the display unit 162 functions as a switch for controlling the selection and deselection of pixels, and can also be called a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the signal line. It is preferable to use an OS transistor for the selection transistor. This makes it possible to maintain the gradation of pixels even when the frame frequency is significantly reduced (e.g., 1 fps or less), and thus power consumption can be reduced by stopping the driver when displaying still images.

[0350] Thus, a display device according to one aspect of the present invention can combine a high aperture ratio, high resolution, high display quality, and low power consumption.

[0351] Figures 30(B) and 30(C) show other examples of transistor configurations.

[0352] Transistors 209 and 210 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer 231 having a channel forming region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel forming region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0353] In the transistor 209 shown in Figure 30(B), an example is shown where the insulating layer 225 covers the top and sides of the semiconductor layer 231. The conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively. Of the conductive layers 222a and 222b, one functions as the source and the other as the drain.

[0354] On the other hand, in the transistor 210 shown in Figure 30(C), the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in Figure 30(C) can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 30(C), an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and conductive layer 222b are connected to the low-resistance region 231n, respectively, through openings in the insulating layer 215.

[0355] A connection portion 204 is provided in the region of substrate 151 where substrate 152 does not overlap. At the connection portion 204, wiring 165 is electrically connected to FPC 172 via electrode 166 and connection layer 242. The electrode 166 is shown as an example of a laminated structure consisting of a conductive layer obtained by processing the same conductive film as conductive layer 124 and a conductive layer obtained by processing the same conductive film as conductive layer 127. On the upper surface of the connection portion 204, electrode 166 is exposed. This allows the connection portion 204 and FPC 172 to be electrically connected via the connection layer 242.

[0356] It is preferable to provide a light-shielding layer 117 on the surface of the substrate 152 that faces the substrate 151. The light-shielding layer 117 can be provided between adjacent EL layers 112 and PD layers 155, between two adjacent light-emitting elements 110, at connection points 130, and at circuit points 164, etc. Various optical components can also be arranged on the outside of the substrate 152.

[0357] By providing a protective layer 121 that covers the light-emitting element 110 and the light-receiving element 150, it is possible to suppress the entry of impurities such as water into the light-emitting element 110 and the light-receiving element 150, thereby improving the reliability of the light-emitting element 110 and the light-receiving element 150.

[0358] It is preferable to use a material with high transmittance to visible light for the substrate 152. On the other hand, the light transmittance of the material used for the substrate 151 is not a requirement.

[0359] Substrates 151 and 152 can be made of glass, quartz, ceramic, sapphire, resin, etc., respectively. Using flexible materials for substrates 151 and 152 can increase the flexibility of the display device 100.

[0360] As the adhesive layer 142, various types of curing adhesives can be used, such as UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, or anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Alternatively, for example, an adhesive sheet may be used.

[0361] As the connecting layer 242, an anisotropic conductive film (ACF) or an anisotropic conductive paste (ACP) can be used.

[0362] Figure 31 is a schematic cross-sectional view showing an example configuration of the display device 100, and shows an example configuration in which a sensor 156 is provided on the substrate 152 of the display device 100 shown in Figure 30(A). The sensor 156 can be a touch sensor that has the function of detecting the touch (including non-contact) of an object to the display unit 162. When the sensor 156 has the function of a touch sensor, the detection of the touch (including non-contact) does not need to be performed using the light-receiving element 150. In this case, for example, when a finger or palm is brought into contact with the display unit 162, the light-receiving element 150 can capture a fingerprint or palm print. Thus, by providing the sensor 156 to the display device 100, the electronic device having the display device 100 can perform both the detection of the touch (including non-contact) of an object and personal authentication using a fingerprint or palm print image. Therefore, the electronic device having the display device 100 can be made into a multi-functional electronic device. Note that personal authentication using a fingerprint or palm print image may also be performed using the sensor 156. Furthermore, even if the display device 100 has a sensor 156, touch (including non-contact) of an object to the display unit 162 may be detected using the light-receiving element 150.

[0363] Figure 31 shows an example in which the sensor 156 is mounted on the substrate 152, that is, the sensor 156 is mounted on the display device 100 in an on-cell manner. The sensor 156 may also be mounted on the display device 100 in an out-cell manner or in an in-cell manner.

[0364] The display device 100 shown in Figure 32(A) differs from the display device 100 shown in Figure 30(A) mainly in that it is a bottom-emission type display device.

[0365] The light L emitted by the light-emitting element 110 is emitted towards the substrate 151. The light L irradiated onto the light-receiving element 150 is irradiated onto the PD layer 155 from the substrate 151 side. It is preferable to use a material with high transmittance to visible light for the substrate 151. On the other hand, the light transmittance of the material used for the substrate 152 is not a requirement.

[0366] It is preferable to form a light-shielding layer 117 between the substrate 151 and the transistor 201, and between the substrate 151 and the transistor 205. Figure 32(A) shows an example in which a light-shielding layer 117 is provided on the substrate 151, an insulating layer 153 is provided so as to cover the light-shielding layer 117, and transistors 201 and 205 are provided on the insulating layer 153.

[0367] In Figures 30(A), 31, and 32(A), the upper surface of layer 128 and the upper surface of the conductive layer 124 are substantially coincidental, but the present invention is not limited to this. Figures 32(B1) to 32(B4) are enlarged views of the region including layer 128 and its surroundings, and are modified examples of the configurations shown in Figures 30(A), 31, and 32(A).

[0368] Figure 32(B1) shows an example where the upper surface of layer 128 is higher than the upper surface of the conductive layer 124. In the example shown in Figure 32(B1), the upper surface of layer 128 has a shape that is convex towards the center and gently bulges outwards.

[0369] Figure 32(B2) shows an example where the upper surface of layer 128 is lower than the upper surface of the conductive layer 124. In the example shown in Figure 32(B2), the upper surface of layer 128 has a gently concave shape that slopes downwards toward the center.

[0370] Figure 32(B3) shows an example where the upper surface of layer 128 is higher than the upper surface of conductive layer 124, and the upper part of layer 128 extends beyond the recess formed in conductive layer 124. In the example shown in Figure 32(B3), a portion of layer 128 may be formed to cover a portion of the generally flat area of ​​conductive layer 124.

[0371] Figure 32(B4) shows an example in which a recess is further formed on a part of the upper surface of layer 128, in the same case as shown in Figure 32(B3). This recess has a shape that is gently indented toward the center.

[0372] [Display Module 2] Figure 33(A) shows a perspective view of the display module 280. The display module 280 includes a display device 100 and an FPC 290. As mentioned above, a display module is a device in which a connector such as an FPC is attached to the circuit board of a display device, or in which an IC is mounted on the circuit board.

[0373] The display module 280 has substrates 291 and 292. The display module 280 has a display unit 281. The display unit 281 is an area in the display module 280 that displays an image, and is an area in which light from each pixel provided in the pixel unit 284, which will be described later, can be seen.

[0374] Figure 33(B) shows a schematic perspective view illustrating the configuration of the substrate 291. On the substrate 291, a circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked. In addition, a terminal section 285 for connecting to the FPC 290 is provided in the portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 and the circuit section 282 are electrically connected by a wiring section 286 composed of multiple wires.

[0375] The pixel section 284 has multiple pixels 284a arranged in a matrix. A magnified view of one pixel 284a is shown on the right side of Figure 33(B). The pixel 284a has a light-emitting element 110R, a light-emitting element 110G, a light-emitting element 110B, and a light-receiving element 150.

[0376] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged in a matrix.

[0377] A single pixel circuit 283a is a circuit that controls the driving of multiple elements in a single pixel 284a. A single pixel circuit 283a may have four circuits for controlling the driving of elements. For example, a pixel circuit 283a can have at least one selection transistor, one current control transistor (driving transistor), and a capacitor for each light-emitting element. In this case, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source. This realizes an active-matrix display device.

[0378] The circuit section 282 has circuits for driving each pixel circuit 283a of the pixel circuit section 283. For example, it is preferable to have one or both of a gate line drive circuit and a source line drive circuit. In addition, it may have at least one of the following: an arithmetic circuit, a memory circuit, and a power supply circuit.

[0379] The FPC290 functions as wiring for supplying video signals or power potential, etc., to the circuit section 282 from an external source. An IC may also be mounted on the FPC290.

[0380] The display module 280 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are stacked on the lower side of the pixel section 284, thereby enabling an extremely high aperture ratio (effective display area ratio) of the display section 281. For example, the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95%, and more preferably 60% or more and 95%. Furthermore, it is possible to arrange the pixels 284a at an extremely high density, enabling an extremely high resolution of the display section 281. For example, it is preferable that the pixels 284a are arranged in the display section 281 with a resolution of 20000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and a resolution of 20000 ppi or less, or 30000 ppi or less.

[0381] Because such a display module 280 is extremely high-resolution, it can be suitably used in VR devices such as head-mounted displays, or in glasses-type AR devices. For example, even in a configuration where the display part of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display part 281, so even when the display part is magnified with lenses, pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small display parts. For example, it can be suitably used in the display part of wearable electronic devices such as watches.

[0382] The display device 100 shown in Figure 34 includes a substrate 301, a light-emitting element 110, a light-receiving element 150, a capacitor 240, and a transistor 310.

[0383] Substrate 301 corresponds to substrate 291 in Figures 33(A) and 33(B). The laminated structure from substrate 301 to insulating layer 255b corresponds to layer 101 containing the transistor in Embodiment 1.

[0384] The transistor 310 is a transistor having a channel-forming region in the substrate 301. The substrate 301 can be a semiconductor substrate such as a single-crystal silicon substrate. The transistor 310 comprises a portion of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region of the substrate 301 doped with impurities and functions as a source or drain. The insulating layer 314 is provided covering the side surface of the conductive layer 311.

[0385] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301.

[0386] Furthermore, an insulating layer 261 is provided covering the transistor 310, and a capacitance 240 is provided on the insulating layer 261.

[0387] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. The conductive layer 241 acts as one electrode of the capacitor 240, the conductive layer 245 acts as the other electrode of the capacitor 240, and the insulating layer 243 acts as the dielectric of the capacitor 240.

[0388] The conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to either the source or drain of the transistor 310 by a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided covering the conductive layer 241. The conductive layer 245 is provided in the region overlapping with the conductive layer 241 via the insulating layer 243. Note that the conductive layer embedded in the insulating layer 254 is referred to as the conductive layer 241 even if it does not function as a capacitance electrode.

[0389] An insulating layer 255a is provided covering the capacitance 240, and an insulating layer 255b is provided on top of the insulating layer 255a.

[0390] Various inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride-oxide insulating films can be suitably used as insulating layers 255a and 255b, respectively. For insulating layer 255a, it is preferable to use an oxide insulating film or oxidative nitride insulating film such as a silicon oxide film, a silicon oxidative nitride film, or an aluminum oxide film. For insulating layer 255b, it is preferable to use a nitride insulating film or oxidative nitride insulating film such as a silicon nitride film or a silicon nitride-oxide film. More specifically, it is preferable to use a silicon oxide film as insulating layer 255a and a silicon nitride film as insulating layer 255b. It is preferable that insulating layer 255b functions as an etching protective film. Alternatively, a nitride insulating film or nitride-oxide insulating film may be used as insulating layer 255a, and an oxide insulating film or oxidative nitride insulating film may be used as insulating layer 255b. In this embodiment, an example is shown in which a recess is provided in insulating layer 255b, but the insulating layer 255b does not necessarily have to have a recess.

[0391] A light-emitting element 110 and a light-receiving element 150 are provided on the insulating layer 255b. The light-emitting element 110 and the light-receiving element 150 can be configured as shown in Figure 2(A), etc. Details of the light-emitting element 110 and the light-receiving element 150 can be found in Embodiment 1. Between adjacent light-emitting elements 110 and light-receiving elements 150, an insulating layer 125 and an insulating layer 126 on the insulating layer 125 are provided. Although not shown in Figure 34, an insulating layer 125 and an insulating layer 126 on the insulating layer 125 are also provided between two adjacent light-emitting elements 110.

[0392] The electrode 111 of the light-emitting element 110 and the electrode 111S of the light-receiving element 150 are electrically connected to either the source or drain of the transistor 310 by plugs 256 embedded in insulating layers 243, 255a, and 255b, a conductive layer 241 embedded in insulating layer 254, and plugs 271 embedded in insulating layer 261. For example, electrode 111 has a region that contacts plug 256. For example, the lower surface of electrode 111 has a region that contacts the upper surface of plug 256. The height of the upper surface of insulating layer 255b and the height of the upper surface of plug 256 are equal or approximately equal. Various conductive materials can be used for the plugs.

[0393] Furthermore, a protective layer 121 is provided on the light-emitting element 110 and the light-receiving element 150. The substrate 152 is bonded to the protective layer 121 by an adhesive layer 142. Details of the components from the light-emitting element 110 and the light-receiving element 150 to the substrate 152 can be found in Embodiment 1. The substrate 152 corresponds to the substrate 292 in Figure 33(A).

[0394] The display device 100 shown in Figure 35 has a configuration in which transistors 310A and 310B, each with a channel formed on a semiconductor substrate, are stacked. In the following description of the display device, parts that are the same as those described earlier may be omitted.

[0395] The display device 100 has a configuration in which a substrate 301B on which a transistor 310B, a capacitor 240, a light-emitting element 110, and a light-receiving element 150 are provided, and a substrate 301A on which a transistor 310A is provided are bonded together.

[0396] Here, it is preferable to provide an insulating layer 345 on the lower surface of the substrate 301B. It is also preferable to provide an insulating layer 346 on top of the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into the substrates 301B and 301A. As the insulating layers 345 and 346, inorganic insulating films that can be used for the protective layer 121 can be used.

[0397] A plug 343 is provided on the substrate 301B, penetrating both the substrate 301B and the insulating layer 345. It is preferable to provide an insulating layer 344 covering the sides of the plug 343. The insulating layer 344 functions as a protective layer and can suppress the diffusion of impurities into the substrate 301B. An inorganic insulating film, usable for the protective layer 121, can be used as the insulating layer 344.

[0398] Furthermore, a conductive layer 342 is provided on the back side of the substrate 301B (the side opposite to the substrate 152 side), beneath the insulating layer 345. Preferably, the conductive layer 342 is provided so as to be embedded in the insulating layer 335. Also, preferably, the undersides of the conductive layer 342 and the insulating layer 335 are flattened. Here, the conductive layer 342 is electrically connected to the plug 343.

[0399] On the other hand, a conductive layer 341 is provided on an insulating layer 346 between substrates 301A and 301B. Preferably, the conductive layer 341 is provided so as to be embedded in the insulating layer 336. Furthermore, it is preferable that the upper surfaces of the conductive layer 341 and the insulating layer 336 are flattened.

[0400] The conductive layer 341 and the conductive layer 342 are bonded together, thereby electrically connecting the substrate 301A and the substrate 301B. By improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335, and the surface formed by the conductive layer 341 and the insulating layer 336, the bonding of the conductive layer 341 and the conductive layer 342 can be improved.

[0401] It is preferable to use the same conductive material for conductive layer 341 and conductive layer 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (titanium nitride film, molybdenum nitride film, or tungsten nitride film) composed of the above elements can be used. In particular, it is preferable to use copper for conductive layer 341 and conductive layer 342. This makes it possible to apply Cu-Cu (copper-copper) direct bonding technology (a technology that achieves electrical conductivity by connecting Cu (copper) pads to each other).

[0402] The display device 100 shown in Figure 36 has a configuration in which conductive layer 341 and conductive layer 342 are joined via bumps 347.

[0403] As shown in Figure 36, the conductive layer 341 and the conductive layer 342 can be electrically connected by providing a bump 347 between them. The bump 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), or tin (Sn). Solder may also be used as the bump 347. An adhesive layer 348 may also be provided between the insulating layer 345 and the insulating layer 346. Furthermore, when the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may be omitted.

[0404] The display device 100 shown in Figure 37 has a different transistor configuration from the display device 100 shown in Figure 34.

[0405] Transistor 320 can be an OS transistor. Alternatively, a Si transistor may be used as transistor 320.

[0406] The transistors in circuit section 282 and the transistors in pixel circuit section 283 shown in Figure 33(B) may have the same structure or different structures. The structures of the multiple transistors in circuit section 282 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in pixel circuit section 283 may all be the same or there may be two or more different structures.

[0407] All transistors in the pixel circuit section 283 may be OS transistors, all transistors in the pixel circuit section 283 may be Si transistors, or some of the transistors in the pixel circuit section 283 may be OS transistors and the rest may be Si transistors.

[0408] For example, by using both LTPS transistors and OS transistors in the pixel circuit section 283, a display device with low power consumption and high driving capability can be realized. For instance, it is preferable to use an OS transistor as a transistor that functions as a switch to control conduction and non-conductivity between wirings, and an LTPS transistor as a transistor that controls current.

[0409] The transistor 320 has a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.

[0410] Substrate 331 corresponds to substrate 291 in Figures 33(A) and 33(B). The laminated structure from substrate 331 to insulating layer 255b corresponds to layer 101 containing the transistor in Embodiment 1. An insulating substrate or a semiconductor substrate can be used as substrate 331.

[0411] An insulating layer 332 is provided on the substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320, and prevents oxygen from detaching from the semiconductor layer 321 to the insulating layer 332. As the insulating layer 332, for example, a film that is less susceptible to hydrogen or oxygen diffusion than a silicon oxide film can be used, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0412] A conductive layer 327 is provided on an insulating layer 332, and an insulating layer 326 is provided covering the conductive layer 327. The conductive layer 327 functions as the first gate electrode of the transistor 320, and a portion of the insulating layer 326 functions as the first gate insulating layer. It is preferable to use an oxide insulating film, such as a silicon oxide film, for at least the portion of the insulating layer 326 that is in contact with the semiconductor layer 321. It is preferable that the upper surface of the insulating layer 326 is flattened.

[0413] The semiconductor layer 321 is provided on the insulating layer 326. Preferably, the semiconductor layer 321 has a metal oxide film having semiconductor properties. A pair of conductive layers 325 are provided in contact with the semiconductor layer 321 and function as source electrodes and drain electrodes.

[0414] An insulating layer 328 is provided covering the top and side surfaces of a pair of conductive layers 325, as well as the side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided on the insulating layer 328. The insulating layer 328 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264, etc., and to prevent oxygen from detaching from the semiconductor layer 321. An insulating film similar to that used for the insulating layer 332 can be used for the insulating layer 328.

[0415] An opening is provided in the insulating layer 328 and the insulating layer 264 that reaches the semiconductor layer 321. Inside this opening, the insulating layer 323 and the conductive layer 324 are embedded, in contact with the sides of the insulating layer 264, the insulating layer 328, and the conductive layer 325, as well as the upper surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0416] The upper surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are flattened so that their heights are the same or approximately the same, and the insulating layer 329 and insulating layer 265 are provided covering them.

[0417] Insulating layers 264 and 265 function as interlayer insulating layers. Insulating layer 329 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing from insulating layer 265 to transistor 320. As insulating layer 329, an insulating film similar to that used for insulating layers 328 and 332 can be used.

[0418] A plug 274, which is electrically connected to one of the pair of conductive layers 325, is provided so as to be embedded in the insulating layers 265, 329, 264, and 328. Here, it is preferable that the plug 274 has a conductive layer 274a that covers the sides of the openings of each of the insulating layers 265, 329, 264, and 328, and a part of the upper surface of the conductive layer 325, and a conductive layer 274b that is in contact with the upper surface of the conductive layer 274a. In this case, it is preferable to use a conductive material that does not easily allow hydrogen and oxygen to diffuse as the conductive layer 274a.

[0419] The display device shown in Figure 37 has an OS transistor and an MML (metal maskless) structure light-emitting element. This configuration makes it possible to extremely low leakage current that can flow through the transistor and leakage current that can flow between adjacent light-emitting elements (also called lateral leakage current or side leakage current). Furthermore, with this configuration, when an image is displayed on the display device, the observer can observe one or more of the following: image sharpness, image clarity, high saturation, and high contrast ratio. Moreover, by having an extremely low leakage current that can flow through the transistor and lateral leakage current between light-emitting elements, it is possible to achieve a display with as little light leakage (so-called white floating) that can occur when displaying black (also called true black display).

[0420] In particular, even among light-emitting elements with an MML structure, applying the aforementioned SBS structure results in a configuration where the layers between the light-emitting elements are separated, making it possible to achieve a display with no side leakage or extremely low side leakage.

[0421] The display device 100 shown in Figure 38 has a configuration in which transistors 320A and 320B, each having an oxide semiconductor in the semiconductor on which the channel is formed, are stacked.

[0422] The configuration of transistors 320A and 320B, and their surrounding components, can be based on the display device 100 shown in Figure 37.

[0423] In this example, we have used a configuration in which two transistors having oxide semiconductors are stacked, but this is not the only option. For example, a configuration in which three or more transistors are stacked may also be used.

[0424] The display device 100 shown in Figure 39 has a configuration in which a transistor 310 with a channel formed on a substrate 301 and a transistor 320 containing a metal oxide in the semiconductor layer where the channel is formed are stacked.

[0425] An insulating layer 261 is provided covering the transistor 310, and a conductive layer 251 is provided on the insulating layer 261. An insulating layer 262 is provided covering the conductive layer 251, and a conductive layer 252 is provided on the insulating layer 262. The conductive layers 251 and 252 each function as wiring. An insulating layer 263 and an insulating layer 332 are provided covering the conductive layer 252, and a transistor 320 is provided on the insulating layer 332. An insulating layer 265 is provided covering the transistor 320, and a capacitor 240 is provided on the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0426] Transistor 320 can be used as a transistor constituting a pixel circuit. Transistor 310 can also be used as a transistor constituting a pixel circuit, or as a transistor constituting a drive circuit (gate line drive circuit or source line drive circuit) for driving the pixel circuit. Furthermore, transistors 310 and 320 can be used as transistors constituting various circuits such as arithmetic circuits or memory circuits.

[0427] This configuration allows for the formation of not only pixel circuits but also, for example, driving circuits directly beneath the light-emitting elements, making it possible to miniaturize the display device compared to cases where the driving circuits are located around the display area.

[0428] Figures 40(A), 40(B), 41(A), 41(B), and 42 are schematic top views showing an example configuration of a display device according to one embodiment of the present invention. In Figures 40(A) to 42, elements provided on the same layer are given the same hatching pattern.

[0429] Figure 40(A) shows the conductive layer 327, the conductive layer 327S, the semiconductor layer 321, and the semiconductor layer 321S. The semiconductor layer 321 has a region that overlaps with the conductive layer 327, and the semiconductor layer 321S has a region that overlaps with the conductive layer 327S.

[0430] Figure 40(B) shows an example configuration in which conductive layers 325a, 325b, 325Sa, 325Sb, 324, 324S, and 322 are added to the configuration shown in Figure 40(A). Transistor 320 is composed of conductive layer 327, semiconductor layer 321, conductive layer 325a, conductive layer 325b, and conductive layer 324, and transistor 320S is composed of conductive layer 327S, semiconductor layer 321S, conductive layer 325Sa, conductive layer 325Sb, and conductive layer 324S. Transistor 320 can be a transistor electrically connected to, for example, the electrode 111 of the light-emitting element 110 shown in Figure 37. Transistor 320S can be a transistor electrically connected to, for example, the electrode 111S of the light-receiving element 150 shown in Figure 37.

[0431] Conductive layer 327 functions as the first gate electrode of transistor 320, and conductive layer 324 functions as the second gate electrode of transistor 320. Conductive layer 325a functions as either the source electrode or the drain electrode of transistor 320, and conductive layer 325b functions as the other source electrode or drain electrode of transistor 320. Conductive layer 327S functions as the first gate electrode of transistor 320S, and conductive layer 324S functions as the second gate electrode of transistor 320S. Conductive layer 325Sa functions as either the source electrode or the drain electrode of transistor 320S, and conductive layer 325Sb functions as the other source electrode or drain electrode of transistor 320S.

[0432] The conductive layer 325b is electrically connected to the conductive layer 322 via the contact portion 351. A constant potential can be supplied to the conductive layer 322, for example. By supplying a constant potential to the conductive layer 322, a constant potential is supplied to the conductive layer 325b.

[0433] In Figures 40(B), 41(A), and 41(B), the contact area is enclosed by a dotted line. Note that, for example, in Figure 40(B), the contact area is rectangular, but the shape of the contact area is not limited to this; for example, it may have a shape with rounded corners.

[0434] Figure 41(A) shows an example configuration in which conductive layers 241, 241Sa, 241Sb, 245, and 245S are added to the configuration shown in Figure 40(B). Capacitance 240 is formed by conductive layers 241 and 245, and capacity 240S is formed by conductive layers 241Sa and 245S. In Figure 41(A), the portions of conductive layers 325a, 325b, 325Sa, and 325Sb that overlap with conductive layers 241, 241Sa, or 241Sb are indicated by dotted lines.

[0435] The conductive layer 325a is electrically connected to the conductive layer 241 via the contact portion 352. The conductive layer 325Sa is electrically connected to the conductive layer 241Sa via the contact portion 353. The conductive layer 325Sb is electrically connected to the conductive layer 241Sb via the contact portion 354.

[0436] Figure 41(B) shows an example configuration in which electrodes 111, 111S, and an optical adjustment layer 116 are added to the configuration shown in Figure 41(A). In Figure 41(B), the portions of the conductive layer 241, conductive layer 241Sa, and conductive layer 241Sb that overlap with electrodes 111 or 111S are indicated by dotted lines.

[0437] The conductive layer 241 is electrically connected to the electrode 111 via the contact portion 355. The conductive layer 241Sb is electrically connected to the electrode 111S via the contact portion 356.

[0438] Figure 42 shows an example configuration in which a transparent electrode 113a and a semi-transparent / semi-reflective electrode 113b are added to the configuration shown in Figure 41(B). In Figure 42, the portions of electrode 111, electrode 111S, and optical adjustment layer 116 that overlap with the transparent electrode 113a are indicated by dotted lines.

[0439] As shown in Figure 42, the transparent electrode 113a can be provided so as to cover the electrode 111, the electrode 111S, and the optical adjustment layer 116.

[0440] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0441] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0442] (Embodiment 3) This embodiment describes a display device according to one aspect of the present invention.

[0443] A display device according to one aspect of the present invention has a light-receiving element (also called a light-receiving device) and a light-emitting element (also called a light-emitting device). Alternatively, a display device according to one aspect of the present invention may have a configuration that includes a light-receiving element (also called a light-receiving device) and a light-emitting element.

[0444] First, a display device having a light-receiving element and a light-emitting element will be described.

[0445] A display device according to one aspect of the present invention has a light-receiving unit with a light-receiving element and a light-emitting element. In a display device according to one aspect of the present invention, the light-emitting elements are arranged in a matrix in the light-receiving unit, and the light-receiving unit can display an image. Furthermore, the light-receiving unit has light-receiving elements arranged in a matrix, and the light-receiving unit has either an imaging function or a sensing function, or both. The light-receiving unit can be used as an image sensor or a touch sensor, etc. That is, by detecting light with the light-receiving unit, it is possible to capture an image or detect a touch operation of an object (finger, pen, etc.). Moreover, in a display device according to one aspect of the present invention, the light-emitting element can be used as a light source for a sensor. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device, and the number of components in the electronic device can be reduced.

[0446] In one embodiment of the present invention, when an object reflects (or scatters) the light emitted by the light-emitting element of the light-receiving unit, the light-receiving element can detect the reflected light (or scattered light), making it possible to capture images, detect touch operations, and perform other actions even in dark places.

[0447] A light-emitting element in a display device according to one aspect of the present invention functions as a display element (also called a display device).

[0448] As the light-emitting element, it is preferable to use an EL element (also called an EL device) such as an OLED or QLED. Examples of light-emitting materials for EL elements include fluorescent materials, phosphorescent materials, inorganic compounds (e.g., quantum dot materials), and thermally activated delayed fluorescence (TADF) materials. In addition, LEDs such as microLEDs can also be used as the light-emitting element.

[0449] A display device according to one aspect of the present invention has the function of detecting light using a light-receiving element.

[0450] When a light-receiving element is used as an image sensor, a display device can capture an image using the light-receiving element. For example, the display device can be used as a scanner.

[0451] An electronic device to which a display device according to one aspect of the present invention is applied can acquire data relating to biometric information such as fingerprints or palm prints using its function as an image sensor. In other words, a biometric authentication sensor can be built into the display device. By having the biometric authentication sensor built into the display device, the number of components in the electronic device can be reduced compared to when a separate biometric authentication sensor is provided in the display device, making it possible to miniaturize and lighten the electronic device.

[0452] Furthermore, when a light-receiving element is used as a touch sensor, the display device can use the light-receiving element to detect touch operations on the object.

[0453] For example, a pn-type or pin-type photodiode can be used as the light-receiving element. The light-receiving element functions as a photoelectric conversion element (also called a photoelectric conversion device) that detects light incident on it and generates an electric charge. The amount of charge generated from the light-receiving element is determined based on the amount of light incident on it.

[0454] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to a variety of devices.

[0455] In one aspect of the present invention, an organic EL element (also called an organic EL device) is used as a light-emitting element, and an organic photodiode is used as a light-receiving element. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL element.

[0456] If all the layers constituting an organic EL element and an organic photodiode were to be fabricated separately, the number of film deposition steps would become enormous. However, since organic photodiodes have many layers that can share the same configuration as organic EL elements, the increase in film deposition steps can be suppressed by depositing these common layers in a single batch.

[0457] For example, one of a pair of electrodes (the common electrode) can be a common layer for both the photodetector and the light-emitting element. Alternatively, at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer may be a common layer for both the photodetector and the light-emitting element. By having a common layer for both the photodetector and the light-emitting element in this way, the number of film deposition cycles and masks can be reduced, thereby reducing the manufacturing process and cost of the display device. Furthermore, a display device having a photodetector can be manufactured using existing manufacturing equipment and methods for display devices.

[0458] Next, a display device having a light-emitting / receiving element and a light-emitting element will be described. Note that explanations of functions, operations, and effects similar to those described above may be omitted.

[0459] In a display device according to one aspect of the present invention, subpixels exhibiting one of the colors have a light-receiving light-emitting element instead of a light-emitting element, while subpixels exhibiting other colors have a light-emitting element. The light-receiving light-emitting element has both a light-emitting function and a light-receiving function. For example, if a pixel has three subpixels, a red subpixel, a green subpixel, and a blue subpixel, at least one subpixel has a light-receiving light-emitting element, and the other subpixels have light-emitting elements. Therefore, the light-receiving and light-emitting section of the display device according to one aspect of the present invention has the function of displaying an image using both light-receiving and light-emitting elements and light-emitting elements.

[0460] By having the light-emitting element serve as both a light-emitting element and a light-receiving element, it is possible to add a light-receiving function to a pixel without increasing the number of subpixels included in the pixel. This makes it possible to add either or both imaging and sensing functions to the light-emitting section of a display device while maintaining the aperture ratio of the pixel (aperture ratio of each subpixel) and the resolution of the display device. Therefore, one embodiment of the present invention allows for a higher aperture ratio of the pixel and facilitates high resolution compared to a case where subpixels having light-receiving elements are provided separately from subpixels having light-emitting elements.

[0461] In one embodiment of the present invention, a display device has a light-receiving unit in which light-receiving and light-emitting elements are arranged in a matrix, and an image can be displayed in the light-receiving unit. The light-receiving unit can also be used as an image sensor or a touch sensor. In one embodiment of the present invention, the light-emitting elements can be used as the light source of the sensor. Therefore, it is possible to capture images or detect touch operations even in dark places.

[0462] Light-emitting and receiving devices can be fabricated by combining organic EL elements and organic photodiodes. For example, a light-emitting and receiving device can be fabricated by adding an active layer of an organic photodiode to the stacked structure of an organic EL element. Furthermore, when fabricating a light-emitting and receiving device by combining an organic EL element and an organic photodiode, the number of film deposition steps can be suppressed by depositing layers that can share a common structure with the organic EL element in a single process.

[0463] For example, one of a pair of electrodes (the common electrode) can be a layer common to both the light-receiving and light-emitting elements. Alternatively, at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer may be a layer common to both the light-receiving and light-emitting elements.

[0464] Furthermore, the function of the layers in a light-receiving element may differ depending on whether the element is functioning as a light-receiving element or as a light-emitting element. In this specification, the components are referred to based on their function when the light-receiving element is functioning as a light-emitting element.

[0465] The display device of this embodiment has the function of displaying an image using a light-emitting element and a light-receiving element. In other words, the light-emitting element and the light-receiving element function as display elements.

[0466] The display device of this embodiment has the function of detecting light using a light-receiving element. The light-receiving element can detect light with a shorter wavelength than the light it emits itself.

[0467] When the light-emitting element is used as an image sensor, the display device of this embodiment can capture an image using the light-emitting element. Furthermore, when the light-emitting element is used as a touch sensor, the display device of this embodiment can detect touch operations on an object using the light-emitting element.

[0468] The light-receiving element functions as a photoelectric conversion element. The light-receiving element can be fabricated by adding an active layer of a light-receiving element to the configuration of the light-receiving element described above. For example, the active layer of a pn-type or pin-type photodiode can be used for the light-receiving element.

[0469] In particular, it is preferable to use an organic photodiode with an active layer containing an organic compound as the light-emitting and receiving element. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to a variety of devices.

[0470] In the following section, a display device, which is an example of a display device according to one aspect of the present invention, will be described in more detail with reference to the drawings.

[0471] [Example of display device configuration 1] [Configuration Example 1-1] Figure 43(A) shows a schematic diagram of the display panel 200. The display panel 200 includes a substrate 207, a substrate 202, a light-receiving element 212, a light-emitting element 216R, a light-emitting element 216G, a light-emitting element 216B, and a functional layer 203, etc.

[0472] The light-emitting elements 216R, 216G, 216B, and 212 are located between substrates 207 and 202. The light-emitting elements 216R, 216G, and 216B emit red (R), green (G), or blue (B) light, respectively. In the following, when light-emitting elements 216R, 216G, and 216B are not distinguished, they may be referred to simply as "light-emitting element 216."

[0473] The display panel 200 has a plurality of pixels arranged in a matrix. Each pixel has one or more subpixels. Each subpixel has one light-emitting element. For example, a pixel can have a configuration with three subpixels (three colors: R, G, B, or three colors: yellow (Y), cyan (C), and magenta (M), etc.) or a configuration with four subpixels (four colors: R, G, B, and white (W), or four colors: R, G, B, and Y, etc.). Furthermore, each pixel has a light-receiving element 212. The light-receiving element 212 may be provided in all pixels or in some pixels. Also, a single pixel may have multiple light-receiving elements 212.

[0474] Figure 43(A) shows how a finger 220 touches the surface of the substrate 202. A portion of the light emitted by the light-emitting element 216G is reflected at the contact point between the substrate 202 and the finger 220. A portion of the reflected light is then incident on the light-receiving element 212, allowing detection that the finger 220 has touched the substrate 202. In other words, the display panel 200 can function as a touch panel.

[0475] The functional layer 203 includes circuits for driving the light-emitting elements 216R, 216G, and 216B, and a circuit for driving the light-receiving element 212. The functional layer 203 is provided with switches, transistors, capacitors, and wiring. However, when the light-emitting elements 216R, 216G, 216B, and the light-receiving element 212 are driven in a passive matrix manner, the switches, transistors, etc. may be omitted.

[0476] The display panel 200 preferably has a function to detect the fingerprint of the finger 220. Figure 43(B) schematically shows an enlarged view of the contact area when the finger 220 is in contact with the substrate 202. Figure 43(B) also shows alternately arranged light-emitting elements 216 and light-receiving elements 212.

[0477] Fingerprints are formed on finger 220 by recesses and protrusions. Therefore, as shown in Figure 43(B), the protrusions of the fingerprints are in contact with the substrate 202.

[0478] Light reflected from a surface or interface can be either specular or diffuse. Specularly reflected light is highly directional, with the angle of incidence and the angle of reflection being the same, while diffusely reflected light is less directional, with low angle dependence of intensity. The light reflected from the surface of finger 220 is predominantly diffuse. On the other hand, the light reflected from the interface between substrate 202 and the atmosphere is predominantly specular.

[0479] The intensity of light reflected from the contact or non-contact surface between the finger 220 and the substrate 202, and incident on the photodetector 212 located directly beneath them, is the sum of specular reflection and diffuse reflection. As described above, in the recessed areas of the finger 220, the substrate 202 and the finger 220 do not come into contact, so specular reflection (indicated by the solid arrow) is dominant, while in the convex areas, they come into contact, so diffuse reflection from the finger 220 (indicated by the dashed arrow) is dominant. Therefore, the intensity of light received by the photodetector 212 located directly beneath the recessed areas is higher than that received by the photodetector 212 located directly beneath the convex areas. This allows for imaging of the fingerprint of the finger 220.

[0480] The spacing between the light-receiving elements 212 is set to be smaller than the distance between two protrusions of a fingerprint, preferably the distance between adjacent recesses and protrusions, thereby enabling the acquisition of a clear fingerprint image. Since the distance between recesses and protrusions in a human fingerprint is approximately 200 μm, for example, the spacing between the light-receiving elements 212 is 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 100 μm or less, and even more preferably 50 μm or less, and 1 μm or more, preferably 10 μm or more, and more preferably 20 μm or more.

[0481] An example of a fingerprint image captured by the display panel 200 is shown in Figure 43(C). In Figure 43(C), the outline of the finger 220 is shown by a dashed line and the outline of the contact area 227 is shown by a dashed line within the imaging range 228. Within the contact area 227, a high-contrast fingerprint 222 can be captured by the difference in the amount of light incident on the light-receiving element 212.

[0482] The display panel 200 can also function as a touch panel and a pen tablet. Figure 43(D) shows the tip of the stylus 229 in contact with the substrate 202 and being slid in the direction of the dashed arrow.

[0483] As shown in Figure 43(D), diffusely reflected light diffused at the contact surface between the tip of the stylus 229 and the substrate 202 is incident on the light-receiving element 212 located in the portion overlapping with the contact surface, thereby enabling high-precision detection of the position of the tip of the stylus 229.

[0484] Figure 43(E) shows an example of the trajectory 226 of the stylus 229 detected by the display panel 200. Because the display panel 200 can detect the position of an object to be detected, such as the stylus 229, with high positional accuracy, it is possible to perform high-resolution drawing in drawing applications, for example. Furthermore, unlike when using capacitive touch sensors or electromagnetic induction type touch pens, it is possible to detect the position of an object to be detected even if it has high insulating properties, so the material of the tip of the stylus 229 is not a concern, and various writing instruments (e.g., brushes, glass pens, or quill pens) can be used.

[0485] Here, Figures 43(F) to 43(H) show examples of pixels applicable to the display panel 200.

[0486] The pixels shown in Figures 43(F) and 43(G) each have a red (R) light-emitting element 216R, a green (G) light-emitting element 216G, a blue (B) light-emitting element 216B, and a light-receiving element 212. Each pixel has a pixel circuit for driving the light-emitting elements 216R, 216G, 216B, and the light-receiving element 212.

[0487] Figure 43(F) shows an example where three light-emitting elements and one light-receiving element are arranged in a 2x2 matrix. Figure 43(G) shows an example where three light-emitting elements are arranged in a row, with a horizontally elongated light-receiving element 212 positioned below them.

[0488] The pixel shown in Figure 43(H) is an example having a white (W) light-emitting element 216W. Here, four light-emitting elements are arranged in a row, and a light-receiving element 212 is positioned below them.

[0489] Furthermore, the pixel configuration is not limited to the above, and various arrangement methods can be adopted.

[0490] [Configuration Example 1-2] The following describes an example of a configuration comprising a light-emitting element that emits visible light, a light-emitting element that emits infrared light, and a light-receiving element.

[0491] The display panel 200A shown in Figure 44(A) has a light-emitting element 216IR in addition to the configuration illustrated in Figure 43(A). The light-emitting element 216IR is a light-emitting element that emits infrared light (IR). In this case, it is preferable to use a light-receiving element 212 that can receive at least the infrared light (IR) emitted by the light-emitting element 216IR. It is even more preferable to use a light-receiving element 212 that can receive both visible light and infrared light.

[0492] As shown in Figure 44(A), when the finger 220 touches the substrate 202, the infrared light IR emitted from the light-emitting element 216IR is reflected by the finger 220, and a portion of this reflected light is incident on the light-receiving element 212, thereby allowing the position information of the finger 220 to be obtained.

[0493] Figures 44(B) to 44(D) show examples of pixels applicable to the display panel 200A.

[0494] Figure 44(B) shows an example where three light-emitting elements are arranged in a row, with the light-emitting element 216IR and the photodetector 212 positioned side by side below them. Figure 44(C) shows an example where four light-emitting elements, including the light-emitting element 216IR, are arranged in a row, with the photodetector 212 positioned below them.

[0495] Figure 44(D) shows an example in which three light-emitting elements and a light-receiving element 212 are arranged around the light-emitting element 216IR in the center.

[0496] In addition, in the pixels shown in Figures 44(B) to 44(D), the positions of the light-emitting elements and the light-emitting elements and the light-receiving elements are interchangeable.

[0497] [Configuration Examples 1-3] The following describes an example of a configuration comprising a light-emitting element that emits visible light and a light-receiving element that emits and receives visible light.

[0498] The display panel 200B shown in Figure 45(A) includes a light-emitting element 216B, a light-emitting element 216G, and a light-receiving element 213R. The light-receiving element 213R has the function of a light-emitting element that emits red (R) light and a function of a photoelectric conversion element that receives visible light. Figure 45(A) shows an example in which the light-receiving element 213R receives green (G) light emitted by the light-emitting element 216G. The light-receiving element 213R may also receive blue (B) light emitted by the light-emitting element 216B. Furthermore, the light-receiving element 213R may receive both green and blue light.

[0499] For example, it is preferable that the light-receiving element 213R receives light with a shorter wavelength than the light it emits. Alternatively, the light-receiving element 213R may be configured to receive light with a longer wavelength than the light it emits (e.g., infrared light). The light-receiving element 213R may also be configured to receive light with a wavelength similar to the light it emits, but in that case, it may also receive the light it emits, which may reduce its luminescence efficiency. Therefore, it is preferable that the light-receiving element 213R is configured such that the peaks of its emission spectrum and the peaks of its absorption spectrum do not overlap as much as possible.

[0500] Furthermore, the light emitted by the light-receiving element is not limited to red light. Nor is the light emitted by the light-emitting element limited to a combination of green and blue light. For example, the light-receiving element can emit green or blue light and receive light of a different wavelength than the light it emits.

[0501] In this way, by having the light-emitting element 213R serve as both a light-emitting element and a light-receiving element, the number of elements arranged in a single pixel can be reduced. This makes it easier to achieve higher resolution, higher aperture ratio, and higher resolution.

[0502] Figures 45(B) to 45(I) show examples of pixels applicable to the display panel 200B.

[0503] Figure 45(B) shows an example where the light-emitting element 213R, light-emitting element 216G, and light-emitting element 216B are arranged in a single row. Figure 45(C) shows an example where the light-emitting elements 216G and 216B are arranged alternately in the vertical direction, with the light-emitting element 213R positioned to the side of them.

[0504] Figure 45(D) shows an example where three light-emitting elements (light-emitting element 216G, light-emitting element 216B, and light-emitting element 216X) and one light-receiving element are arranged in a 2x2 matrix. Light-emitting element 216X is an element that emits light other than R, G, and B. Examples of light other than R, G, and B include white (W), yellow (Y), cyan (C), magenta (M), infrared (IR), and ultraviolet (UV) light. When light-emitting element 216X emits infrared light, it is preferable that the light-receiving element has the function of detecting infrared light, or the function of detecting both visible light and infrared light. The wavelength of light detected by the light-receiving element can be determined according to the application of the sensor.

[0505] Figure 45(E) shows two pixels. The area enclosed by the dotted line, containing three elements, corresponds to one pixel. Each pixel has an element-emitting element 216G, an element-emitting element 216B, and an element-receiving element 213R. In the left pixel shown in Figure 45(E), the element-emitting element 216G is located in the same row as the element-receiving element 213R, and the element-emitting element 216B is located in the same column as the element-receiving element 213R. In the right pixel shown in Figure 45(E), the element-emitting element 216G is located in the same row as the element-receiving element 213R, and the element-emitting element 216B is located in the same column as the element-emitting element 216G. In the pixel layout shown in Figure 45(E), the element-receiving element 213R, element-emitting element 216G, and element-emitting element 216B are repeatedly arranged in both odd and even rows, and in each column, the element-emitting element or element-receiving element of different colors are arranged in odd and even rows.

[0506] Figure 45(F) shows four pixels to which a Pentile array has been applied, and two adjacent pixels have light-emitting or light-receiving elements that emit two different colored light in different combinations. Figure 45(F) shows the top surface shape of the light-emitting or light-receiving elements.

[0507] In Figure 45(F), the upper left and lower right pixels have a light-receiving element 213R and a light-emitting element 216G. The upper right and lower left pixels have a light-emitting element 216G and a light-emitting element 216B. In other words, in the example shown in Figure 45(F), each pixel is provided with a light-emitting element 216G.

[0508] The top surface shape of the light-emitting element and the light-receiving element is not particularly limited and can be a circle, ellipse, polygon, polygon with rounded corners, etc. Figure 45(F), etc., shows an example where the top surface shape of the light-emitting element and the light-receiving element are a square (rhombus) tilted at approximately 45 degrees. Note that the top surface shapes of the light-emitting element and the light-receiving element of each color may be different from each other, or they may be the same for some or all colors.

[0509] Furthermore, the sizes of the light-emitting regions (or light-receiving regions) of each color light-emitting and light-receiving element may differ from each other, or they may be the same for some or all colors. For example, in Figure 45(F), the area of ​​the light-emitting region of the light-emitting element 216G provided in each pixel may be smaller than the light-emitting region (or light-receiving region) of the other elements.

[0510] Figure 45(G) is a modified version of the pixel arrangement shown in Figure 45(F). Specifically, the configuration in Figure 45(G) is obtained by rotating the configuration in Figure 45(F) by 45 degrees. In Figure 45(F), it was explained that one pixel has two elements, but as shown in Figure 45(G), it can also be considered that one pixel is composed of four elements.

[0511] Figure 45(H) shows a modified version of the pixel arrangement shown in Figure 45(F). The upper left and lower right pixels in Figure 45(H) have a light-receiving element 213R and a light-emitting element 216G. The upper right and lower left pixels also have a light-receiving element 213R and a light-emitting element 216B. In other words, in the example shown in Figure 45(H), each pixel is provided with a light-receiving element 213R. Because each pixel is provided with a light-receiving element 213R, the configuration shown in Figure 45(H) can perform imaging with higher resolution compared to the configuration shown in Figure 45(F). This can improve the accuracy of, for example, biometric authentication.

[0512] Figure 45(I) shows a modified version of the pixel array shown in Figure 45(H), which is obtained by rotating the pixel array by 45 degrees.

[0513] In Figure 45(I), we explain that one pixel is composed of four elements (two light-emitting elements and two light-receiving elements). In this way, by having multiple light-receiving elements with light-receiving capabilities in a single pixel, imaging can be performed with high resolution. Therefore, the accuracy of biometric authentication can be improved. For example, the resolution of the image can be made √2 times the resolution of the display.

[0514] A display device to which the configuration shown in Figure 45(H) or Figure 45(I) is applied has p (where p is an integer greater than or equal to 2) first light-emitting elements, q (where q is an integer greater than or equal to 2) second light-emitting elements, and r (where r is an integer greater than p and greater than q) light-receiving elements. p and r satisfy r = 2p. Also, p, q, and r satisfy r = p + q. One of the first light-emitting elements and the second light-emitting elements emits green light, and the other emits blue light. The light-receiving elements emit red light and have a light-receiving function.

[0515] For example, when detecting touch operations using a light-emitting / receiving device, it is preferable that the light emitted from the light source is not easily visible to the user. Since blue light is less visible than green light, it is preferable to use a light-emitting device that emits blue light as the light source. Therefore, it is preferable that the light-emitting / receiving device has the function of receiving blue light. However, it is not limited to this, and the light-emitting device used as the light source can be appropriately selected according to the sensitivity of the light-emitting / receiving device.

[0516] As described above, various pixel arrangements can be applied to the display device of this embodiment.

[0517] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0518] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0519] (Embodiment 4) In this embodiment, a light-emitting element (also called a light-emitting device) and a light-receiving element (also called a light-receiving device) that can be used in a light-receiving device according to one aspect of the present invention will be described.

[0520] In this specification, a structure in which different light-emitting layers are created or painted for each color of light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. Also, in this specification, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. A white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.

[0521] Furthermore, light-emitting devices can be broadly classified into single structures and tandem structures. A single-structure device has one light-emitting unit between a pair of electrodes, and it is preferable that the light-emitting unit includes one or more light-emitting layers. When obtaining white light emission using two light-emitting layers, the light-emitting layers should be selected such that the light-emitting colors of each of the two layers are complementary colors. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary colors, a configuration that emits white light as a whole can be obtained. Also, when obtaining white light emission using three or more light-emitting layers, the light-emitting device should be configured so that the light-emitting colors of the three or more layers combine to emit white light as a whole.

[0522] A tandem device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. By using light-emitting layers that emit light of the same color in each light-emitting unit, the brightness per given current can be increased, and a more reliable light-emitting device can be obtained compared to a single structure. To obtain white light emission in a tandem structure, the light from the light-emitting layers of multiple light-emitting units can be combined to produce white light emission. The combination of light-emitting colors that produces white light emission is the same as in the single structure. In a tandem device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0523] Furthermore, when comparing the aforementioned white light-emitting devices (single or tandem structure) with light-emitting devices with an SBS structure, the SBS structure light-emitting device can consume less power than the white light-emitting device. If you want to keep power consumption low, it is preferable to use a light-emitting device with an SBS structure. On the other hand, white light-emitting devices are preferable because their manufacturing process is simpler than that of SBS structure light-emitting devices, which can lead to lower manufacturing costs or higher manufacturing yields.

[0524] [Device Structure] Next, a detailed configuration of a light-emitting element, a light-receiving element, and a light-receiving element that can be used in a display device according to one embodiment of the present invention will be described.

[0525] A display device according to one aspect of the present invention may be a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting element is formed, a bottom-emission type that emits light toward the substrate on which the light-emitting element is formed, or a dual-emission type that emits light on both sides.

[0526] In this embodiment, a top-emission type display device will be used as an example for explanation.

[0527] In this specification, unless otherwise specified, when describing a configuration having multiple elements (such as light-emitting elements or light-emitting layers), the letters will be omitted when describing matters common to each element. For example, when describing matters common to light-emitting layers 383R and 383G, etc., it may be written as light-emitting layer 383.

[0528] The display device 380A shown in Figure 46(A) includes a light-receiving element 370PD, a light-emitting element 370R that emits red (R) light, a light-emitting element 370G that emits green (G) light, and a light-emitting element 370B that emits blue (B) light.

[0529] Each light-emitting element has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, ​​a light-emitting layer, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 stacked in this order. Light-emitting element 370R has a light-emitting layer 383R, light-emitting element 370G has a light-emitting layer 383G, and light-emitting element 370B has a light-emitting layer 383B. Light-emitting layer 383R has a light-emitting material that emits red light, light-emitting layer 383G has a light-emitting material that emits green light, and light-emitting layer 383B has a light-emitting material that emits blue light.

[0530] The light-emitting element is an electroluminescent element that emits light towards the common electrode 375 when a voltage is applied between the pixel electrode 371 and the common electrode 375.

[0531] The photodetector 370PD has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, ​​an active layer 373, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 stacked in this order.

[0532] The light-receiving element 370PD is a photoelectric conversion element that receives light incident from outside the display device 380A and converts it into an electrical signal.

[0533] In this embodiment, both the light-emitting element and the light-receiving element are described as having a pixel electrode 371 functioning as the anode and a common electrode 375 functioning as the cathode. In other words, the light-receiving element can detect light incident on it, generate an electric charge, and extract it as an electric current by driving it with a reverse bias applied between the pixel electrode 371 and the common electrode 375.

[0534] In the display device of this embodiment, an organic compound is used for the active layer 373 of the light-receiving element 370PD. The layers of the light-receiving element 370PD other than the active layer 373 can have the same configuration as those of the light-emitting element. Therefore, by simply adding a step of forming the active layer 373 to the manufacturing process of the light-emitting element, the light-receiving element 370PD can be formed in parallel with the formation of the light-emitting element. Furthermore, the light-emitting element and the light-receiving element 370PD can be formed on the same substrate. Thus, the light-receiving element 370PD can be incorporated into the display device without significantly increasing the manufacturing process.

[0535] In the display device 380A, an example is shown where the light-receiving element 370PD and the light-emitting element have a common configuration, except that the active layer 373 of the light-receiving element 370PD and the light-emitting layer 383 of the light-emitting element are manufactured separately. However, the configuration of the light-receiving element 370PD and the light-emitting element is not limited to this. In addition to the active layer 373 and the light-emitting layer 383, the light-receiving element 370PD and the light-emitting element may have layers that are manufactured separately from each other. It is preferable that the light-receiving element 370PD and the light-emitting element have one or more layers that are used in common (common layers). This makes it possible to incorporate the light-receiving element 370PD into the display device without significantly increasing the manufacturing process.

[0536] Of the pixel electrode 371 and the common electrode 375, the electrode that extracts light preferably uses a conductive film that transmits visible light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode that does not extract light.

[0537] The light-emitting element has at least an emissive layer 383. The light-emitting element may further have layers other than the emissive layer 383 that contain a material with high hole injection properties, a material with high hole transport properties, a hole blocking material, a material with high electron transport properties, a material with high electron injection properties, or a bipolar material (a material with high electron transport and hole transport properties).

[0538] For example, the light-emitting element and the light-receiving element can share one or more of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. Further, the light-emitting element and the light-receiving element can separately form one or more of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

[0539] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and is a layer containing a material with high hole injection properties. As a material with high hole injection properties, an aromatic amine compound or a composite material containing a hole transport material and an acceptor material (electron-accepting material) can be used.

[0540] In the light-emitting element, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In the light-receiving element, the hole transport layer is a layer that transports holes generated based on light incident on the active layer to the anode. The hole transport layer is a layer containing a hole transport material. As the hole transport material, a substance having a hole mobility of 1×10 -6 cm 2 / Vs or more is preferable. As long as the substance has higher hole transportability than electrons, other substances can also be used. As the hole transport material, a hole transport material with high hole transportability such as a π-electron-excessive heteroaromatic compound (for example, a carbazole derivative, a thiophene derivative, or a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton) is preferable.

[0541] In the light-emitting element, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In the light-receiving element, the electron transport layer is a layer that transports electrons generated based on light incident on the active layer to the cathode. The electron transport layer is a layer containing an electron transport material. As the electron transport material, a substance having an electron mobility of 1×10 -6 cm 2Materials having an electron mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Examples of electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, or metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, or other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds, which are materials with high electron transport capabilities.

[0542] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer containing a material with high electron injection capabilities. Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection capabilities. Composite materials containing both electron transport materials and donor materials (electron-donating materials) can also be used as materials with high electron injection capabilities.

[0543] The light-emitting layer 383 is a layer containing a light-emitting material. The light-emitting layer 383 may contain one or more types of light-emitting materials. As the light-emitting material, a material that exhibits a light emission color such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red may be used as appropriate. In addition, a material that emits near-infrared light may also be used as the light-emitting material.

[0544] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0545] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0546] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0547] The light-emitting layer 383 may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). One or more types of organic compounds may include hole-transporting materials and electron-transporting materials, or both. Alternatively, one or more types of organic compounds may include bipolar materials or TADF materials.

[0548] The light-emitting layer 383 preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. With such a configuration, light emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material), can be efficiently obtained. By selecting a combination that forms an excitation complex that exhibits light emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be efficiently obtained. This configuration enables high efficiency, low-voltage operation, and long lifespan of the light-emitting element simultaneously.

[0549] For a combination of materials to form an excited complex, it is preferable that the HOMO level (highest occupied orbital level) of the hole-transporting material is greater than or equal to the HOMO level of the electron-transporting material. It is also preferable that the LUMO level (lowest unoccupied orbital level) of the hole-transporting material is greater than or equal to the LUMO level of the electron-transporting material. The LUMO and HOMO levels of the materials can be derived from the electrochemical properties (reduction potential and oxidation potential) of the materials measured by cyclic voltammetry (CV).

[0550] The formation of excited complexes can be confirmed, for example, by comparing the emission spectra of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing that the emission spectrum of the mixed film shifts to longer wavelengths (or has a new peak on the longer wavelength side) compared to the emission spectra of each individual material. Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing differences in the transient response, such as the transient PL lifetime of the mixed film having a longer lifetime component or a larger proportion of the delayed component than the transient PL lifetime of each individual material. Furthermore, the transient PL mentioned above may be read as transient electroluminescence (EL). That is, the formation of excited complexes can also be confirmed by comparing the transient EL of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing the differences in the transient response.

[0551] The active layer 373 contains a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In this embodiment, an example is shown in which an organic semiconductor is used as the semiconductor of the active layer 373. Using an organic semiconductor is preferable because it allows the light-emitting layer 383 and the active layer 373 to be formed by the same method (for example, vacuum deposition), and the manufacturing equipment can be shared.

[0552] The n-type semiconductor material of the active layer 373 is fullerene (for example, C 60 Fullerenes, and C 70Examples include electron-accepting organic semiconductor materials such as fullerenes and fullerene derivatives. Fullerenes have a shape like a soccer ball, and this shape is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting properties. Normally, when π-electron conjugation (resonance) spreads out in a plane, as in benzene, electron-donating properties increase, but because fullerenes have a spherical shape, they have high electron-accepting properties despite the large spread of π-electron conjugation. High electron-accepting properties allow for fast and efficient charge separation, making them useful as photodetectors. 60 , C 70 Both have a broad absorption band in the visible light region, and especially C 70 is C 60 Compared to [another compound], it is preferable because it has a larger π-electron conjugation system and a broad absorption band in the long-wavelength region. Other examples of fullerene derivatives include [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviated as PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviated as PC60BM), and 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C60 (abbreviated as ICBA).

[0553] Furthermore, examples of n-type semiconductor materials include perylenetetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviated as Me-PTCDI).

[0554] Furthermore, an example of an n-type semiconductor material is 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalonitrile (abbreviation: FT2TDMN).

[0555] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0556] Examples of p-type semiconductor materials for the active layer 373 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin(II) phthalocyanine (SnPc), quinacridone, and rubrene.

[0557] Furthermore, examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. In addition, examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0558] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0559] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0560] For example, the active layer 373 is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer 373 may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0561] The light-emitting element and the light-receiving element may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting element and the light-receiving element can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0562] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transporting materials or electron blocking materials. In addition, inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as electron transporting materials or hole blocking materials. The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0563] Furthermore, the active layer 373 can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method of dispersing the acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0564] The display device 380B shown in Figure 46(B) differs from the display device 380A in that the light-receiving element 370PD and the light-emitting element 370R have the same configuration.

[0565] The light-receiving element 370PD and the light-emitting element 370R both share an active layer 373 and a light-emitting layer 383R.

[0566] Here, it is preferable that the light-receiving element 370PD has a common configuration with the light-emitting element that emits light with a longer wavelength than the light to be detected. For example, the light-receiving element 370PD configured to detect blue light can have the same configuration as one or both of the light-emitting elements 370R and 370G. For example, the light-receiving element 370PD configured to detect green light can have the same configuration as the light-emitting element 370R.

[0567] By using a common configuration for the light-receiving element 370PD and the light-emitting element 370R, the number of film deposition steps and masks can be reduced compared to a configuration where the light-receiving element 370PD and the light-emitting element 370R have distinct layers. Therefore, the manufacturing process and cost of the display device can be reduced.

[0568] Furthermore, by using a common configuration for the light-receiving element 370PD and the light-emitting element 370R, the margin for misalignment can be narrowed compared to a configuration where the light-receiving element 370PD and the light-emitting element 370R have distinct layers. This allows for an increase in the aperture ratio of the pixels, thereby improving the light extraction efficiency of the display device. This extends the lifespan of the light-emitting element. In addition, the display device can display high brightness. Furthermore, it is possible to increase the resolution of the display device.

[0569] The light-emitting layer 383R has a light-emitting material that emits red light. The active layer 373 has an organic compound that absorbs light with a shorter wavelength than red (for example, green light and / or blue light). Preferably, the active layer 373 has an organic compound that does not easily absorb red light and absorbs light with a shorter wavelength than red. As a result, red light is efficiently extracted from the light-emitting element 370R, and the photodetector 370PD can detect light with a shorter wavelength than red with high accuracy.

[0570] Furthermore, although the display device 380B shows an example in which the light-emitting element 370R and the light-receiving element 370PD have the same configuration, the light-emitting element 370R and the light-receiving element 370PD may each have optical adjustment layers of different thicknesses.

[0571] The display device 380C shown in Figures 47(A) and 47(B) has a light-receiving element 370SR, an element 370G, and an element 370B that emit red (R) light and have a light-receiving function. The configuration of the element 370G and the element 370B can be adapted from, for example, the display device 380A.

[0572] The light-receiving element 370SR has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, ​​an active layer 373, a light-emitting layer 383R, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 stacked in this order. The light-receiving element 370SR has the same configuration as the light-receiving element 370R and the light-receiving element 370PD exemplified in the display device 380B described above.

[0573] Figure 47(A) shows the case where the light-emitting element 370SR functions as a light-emitting element. Figure 47(A) shows an example where the light-emitting element 370B emits blue light, the light-emitting element 370G emits green light, and the light-emitting element 370SR emits red light.

[0574] Figure 47(B) shows the case where the light-receiving element 370SR functions as a light-receiving element. Figure 47(B) shows an example in which the light-receiving element 370SR receives blue light emitted by the light-emitting element 370B and green light emitted by the light-emitting element 370G.

[0575] The light-emitting element 370B, the light-emitting element 370G, and the light-receiving element 370SR each have a pixel electrode 371 and a common electrode 375, respectively. In this embodiment, the case in which the pixel electrode 371 functions as an anode and the common electrode 375 functions as a cathode will be described as an example. The light-receiving element 370SR can detect light incident on it, generate an electric charge, and extract it as an electric current by driving it with a reverse bias applied between the pixel electrode 371 and the common electrode 375.

[0576] The light-receiving element 370SR can be described as a light-emitting element with an active layer 373 added. In other words, by simply adding a step of depositing the active layer 373 to the manufacturing process of the light-emitting element, the light-receiving element 370SR can be formed in parallel with the formation of the light-emitting element. Furthermore, the light-emitting element and the light-receiving element can be formed on the same substrate. Therefore, without significantly increasing the manufacturing process, it is possible to provide the display unit with either or both imaging and sensing functions.

[0577] The stacking order of the light-emitting layer 383R and the active layer 373 is not limited. Figures 47(A) and 47(B) show an example in which the active layer 373 is provided on the hole transport layer 382 and the light-emitting layer 383R is provided on the active layer 373. The stacking order of the light-emitting layer 383R and the active layer 373 may be reversed.

[0578] In a light-receiving and light-emitting device, it is preferable to use a conductive film that transmits visible light on the electrode that extracts light, and to use a conductive film that reflects visible light on the electrode that does not extract light.

[0579] The functions and materials of each layer constituting the light-emitting and light-receiving elements are the same as those of each layer constituting the light-emitting and light-receiving elements, so a detailed explanation is omitted.

[0580] Figures 47(C) to 47(G) show examples of stacked structures of light-emitting and receiving devices.

[0581] The light-emitting and receiving device shown in Figure 47(C) includes a first electrode 377, a hole injection layer 381, a hole transport layer 382, ​​a light-emitting layer 383R, an active layer 373, an electron transport layer 384, an electron injection layer 385, and a second electrode 378.

[0582] Figure 47(C) shows an example in which a light-emitting layer 383R is provided on a hole transport layer 382, ​​and an active layer 373 is laminated on the light-emitting layer 383R.

[0583] As shown in Figures 47(A) to 47(C), the active layer 373 and the light-emitting layer 383R may be in contact with each other.

[0584] Furthermore, it is preferable to provide a buffer layer between the active layer 373 and the light-emitting layer 383R. In this case, it is preferable that the buffer layer has hole transport and electron transport properties. For example, it is preferable to use a bipolar material for the buffer layer. Alternatively, at least one layer from among a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, and an electron blocking layer can be used as the buffer layer. Figure 47(D) shows an example in which a hole transport layer 382 is used as the buffer layer.

[0585] By providing a buffer layer between the active layer 373 and the light-emitting layer 383R, the transfer of excitation energy from the light-emitting layer 383R to the active layer 373 can be suppressed. Furthermore, the buffer layer can be used to adjust the optical path length (cavity length) of the microcavity structure. Therefore, a light-emitting / receiving device having a buffer layer between the active layer 373 and the light-emitting layer 383R can achieve high luminescence efficiency.

[0586] Figure 47(E) shows an example of a laminated structure in which a hole transport layer 382-1, an active layer 373, a hole transport layer 382-2, and an emissive layer 383R are stacked in that order on a hole injection layer 381. The hole transport layer 382-2 functions as a buffer layer. The hole transport layer 382-1 and the hole transport layer 382-2 may contain the same material or different materials. Alternatively, a layer that can be used as a buffer layer as described above may be used instead of the hole transport layer 382-2. Furthermore, the positions of the active layer 373 and the emissive layer 383R may be swapped.

[0587] The light-receiving element shown in Figure 47(F) differs from the light-receiving element shown in Figure 47(A) in that it does not have a hole transport layer 382. Thus, the light-receiving element does not need to have at least one of the hole injection layer 381, hole transport layer 382, ​​electron transport layer 384, and electron injection layer 385. Furthermore, the light-receiving element may have other functional layers such as a hole blocking layer or an electron blocking layer.

[0588] The light-receiving element shown in Figure 47(G) differs from the light-receiving element shown in Figure 47(A) in that it does not have an active layer 373 and an emitting layer 383R, but has a layer 389 that serves as both an emitting layer and an active layer.

[0589] As a layer that serves as both an emissive layer and an active layer, for example, a layer can be used that contains three materials: an n-type semiconductor that can be used in the active layer 373, a p-type semiconductor that can be used in the active layer 373, and an emissive material that can be used in the emissive layer 383R.

[0590] Furthermore, it is preferable that the lowest energy absorption band of the absorption spectrum of the mixed material of n-type and p-type semiconductors and the maximum peak of the emission spectrum (PL spectrum) of the luminescent material do not overlap, and it is even more preferable that they are sufficiently far apart.

[0591] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0592] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0593] (Embodiment 5) This embodiment describes an example of a display device having a light-receiving device according to one aspect of the present invention.

[0594] In the display device of this embodiment, each pixel can be configured to have multiple subpixels, each having a light-emitting device that emits a different color from the others. For example, a pixel can be configured to have three types of subpixels. Examples of these three subpixels include subpixels of three colors: red (R), green (G), and blue (B); and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). Alternatively, a pixel can be configured to have four types of subpixels. Examples of these four subpixels include subpixels of four colors: R, G, B, and white (W); and subpixels of four colors: R, G, B, and Y.

[0595] There are no particular limitations on the arrangement of subpixels, and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0596] Furthermore, the top surface shape of a sub-pixel can be, for example, a triangle, a quadrilateral (including rectangles and squares), a pentagon, or other polygons, or a polygon with rounded corners, an ellipse, or a circle. The top surface shape of a sub-pixel referred to here corresponds to the top surface shape of the light-emitting region of a light-emitting device.

[0597] In a display device having light-emitting and light-receiving devices in its pixels, the pixels have a light-receiving function, allowing for the detection of contact or proximity of an object while displaying an image. For example, not only can the display device display an image using all of its subpixels, but some subpixels can also emit light as a light source, while the remaining subpixels display an image.

[0598] The pixels shown in Figures 48(A), 48(B), and 48(C) have sub-pixels G, B, R, and PS.

[0599] The pixels shown in Figure 48(A) have a stripe array applied. The pixels shown in Figure 48(B) have a matrix array applied.

[0600] The pixel arrangement shown in Figure 48(C) has a configuration in which three subpixels (subpixel R, subpixel G, and subpixel PS) are arranged vertically next to one subpixel (subpixel B).

[0601] The pixels shown in Figures 48(D), 48(E), and 48(F) have sub-pixels G, B, R, IR, and PS.

[0602] Figures 48(D), 48(E), and 48(F) show examples where a single pixel spans two rows. The upper row (first row) has three subpixels (subpixel G, subpixel B, and subpixel R), while the lower row (second row) has two subpixels (one subpixel PS and one subpixel IR).

[0603] Figure 48(D) shows a configuration with three vertically elongated sub-pixels G, B, and R arranged horizontally, with a sub-pixel PS and a horizontally elongated sub-pixel IR arranged horizontally below them. Figure 48(E) shows a configuration with two horizontally elongated sub-pixels G and R arranged vertically, with a vertically elongated sub-pixel B arranged next to them, and a horizontally elongated sub-pixel IR and a vertically elongated sub-pixel PS arranged horizontally below them. Figure 48(F) shows a configuration with three vertically elongated sub-pixels R, G, and B arranged horizontally, with a horizontally elongated sub-pixel IR and a vertically elongated sub-pixel PS arranged horizontally below them. Figures 48(E) and 48(F) show the case where the area of ​​sub-pixel IR is the largest, and the area of ​​sub-pixel PS is about the same as that of sub-pixel B, etc.

[0604] Note that the layout of the subpixels is not limited to the configurations shown in Figures 48(A) to 48(F).

[0605] Sub-pixel R has a light-emitting device that emits red light. Sub-pixel G has a light-emitting device that emits green light. Sub-pixel B has a light-emitting device that emits blue light. Sub-pixel IR has a light-emitting device that emits infrared light. Sub-pixel PS has a light-receiving device. The wavelength of light detected by sub-pixel PS is not particularly limited, but it is preferable that the light-receiving device of sub-pixel PS is sensitive to the light emitted by the light-emitting devices of sub-pixel R, sub-pixel G, sub-pixel B, or sub-pixel IR. For example, it is preferable to detect one or more of the wavelengths of light in the blue, violet, blue-violet, green, yellow-green, yellow, orange, red, and infrared wavelength ranges.

[0606] The light-receiving area of ​​a sub-pixel PS is smaller than the light-emitting area of ​​other sub-pixels. A smaller light-receiving area results in a narrower imaging range, which helps suppress blurring in the image and improves resolution. Therefore, using sub-pixel PS enables high-definition or high-resolution imaging. For example, sub-pixel PS can be used to capture images for personal authentication using fingerprints, palm prints, irises, pulse patterns (including vein and artery patterns), or faces.

[0607] Furthermore, the sub-pixel PS can be used in touch sensors (also called direct touch sensors) or near-touch sensors (also called hover sensors, hover-touch sensors, non-contact sensors, or touchless sensors). For example, it is preferable for the sub-pixel PS to detect infrared light. This enables touch detection even in dark places.

[0608] Here, the touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). The touch sensor can detect an object when the display device and the object are in direct contact. The near-touch sensor can detect an object even if the object does not touch the display device. For example, it is preferable that the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it becomes possible to operate the display device without the object directly touching it; in other words, it becomes possible to operate the display device without contact (touchless). With the above configuration, the risk of the display device becoming dirty or scratched can be reduced, or it becomes possible to operate the display device without the object directly touching any dirt (e.g., dust or viruses) attached to the display device.

[0609] Furthermore, in order to perform high-resolution imaging, it is preferable that sub-pixels PS be provided on all pixels of the display device. On the other hand, when sub-pixels PS are used in touch sensors or near-touch sensors, etc., the accuracy required is not as high as when imaging fingerprints, etc., so it is sufficient to provide them on only some of the pixels of the display device. The detection speed can be increased by reducing the number of sub-pixels PS of the display device to, for example, less than the number of sub-pixels R.

[0610] Figure 48(G) shows an example of a pixel circuit for a subpixel having a light-receiving device, and Figure 48(H) shows an example of a pixel circuit for a subpixel having a light-emitting device.

[0611] The pixel circuit PIX1 shown in Figure 48(G) includes a light-receiving device PD, transistors M11, M12, M13, M14, and capacitor C2. Here, an example is shown in which a photodiode is used as the light-receiving device PD.

[0612] The light-receiving device PD has its anode electrically connected to wiring V1 and its cathode electrically connected to either the source or drain of transistor M11. Transistor M11 has its gate electrically connected to wiring TX and its other source or drain electrically connected to one electrode of capacitor C2, one source or drain of transistor M12, and the gate of transistor M13. Transistor M12 has its gate electrically connected to wiring RES and its other source or drain electrically connected to wiring V2. Transistor M13 has its source or drain electrically connected to wiring V3 and its other source or drain electrically connected to either the source or drain of transistor M14. Transistor M14 has its gate electrically connected to wiring SE and its other source or drain electrically connected to wiring OUT1.

[0613] Constant potentials are supplied to wirings V1, V2, and V3, respectively. When the photodetector PD is driven with reverse bias, a potential higher than that of wiring V1 is supplied to wiring V2. Transistor M12 is controlled by a signal supplied to wiring RES and has the function of resetting the potential of the node connected to the gate of transistor M13 to the potential supplied to wiring V2. Transistor M11 is controlled by a signal supplied to wiring TX and has the function of controlling the timing at which the potential of the above node changes according to the current flowing through the photodetector PD. Transistor M13 functions as an amplifying transistor that provides an output according to the potential of the above node. Transistor M14 is controlled by a signal supplied to wiring SE and functions as a selection transistor for reading the output according to the potential of the above node with an external circuit connected to wiring OUT1.

[0614] The pixel circuit PIX2 shown in Figure 48(H) includes a light-emitting device EL, transistors M15, M16, M17, and capacitor C3. Here, an example using a light-emitting diode as the light-emitting device EL is shown. In particular, it is preferable to use an organic EL element as the light-emitting device EL.

[0615] Transistor M15 has its gate electrically connected to wiring VG, one of its source or drain electrically connected to wiring VS, and the other of its source or drain electrically connected to one electrode of capacitor C3 and the gate of transistor M16. One of the source or drain of transistor M16 is electrically connected to wiring V4, and the other is electrically connected to the anode of light-emitting device EL and one of the source or drain of transistor M17. Transistor M17 has its gate electrically connected to wiring MS, and the other of its source or drain electrically connected to wiring OUT2. The cathode of light-emitting device EL is electrically connected to wiring V5.

[0616] Constant potentials are supplied to wirings V4 and V5, respectively. This allows the anode side of the light-emitting device EL to be at a high potential and the cathode side to be at a lower potential than the anode side. Transistor M15 is controlled by a signal supplied to wiring VG and functions as a selection transistor to control the selected state of the pixel circuit PIX2. Transistor M16 functions as a drive transistor that controls the current flowing to the light-emitting device EL according to the potential supplied to its gate. When transistor M15 is conducting, the potential supplied to wiring VS is supplied to the gate of transistor M16, and the luminescence brightness of the light-emitting device EL can be controlled according to that potential. Transistor M17 is controlled by a signal supplied to wiring MS and has the function of outputting the potential between transistor M16 and the light-emitting device EL to the outside via wiring OUT2.

[0617] Here, it is preferable to apply transistors to which the semiconductor layer in which the channel is formed is made of a metal oxide (oxide semiconductor) for transistors M11, M12, M13, and M14 in the pixel circuit PIX1, and transistors M15, M16, and M17 in the pixel circuit PIX2.

[0618] Transistors using metal oxides, which have a wider bandgap and lower carrier density than silicon, can achieve extremely low off-currents. Therefore, this low off-current allows the charge stored in the capacitor connected in series with the transistor to be retained for extended periods. For this reason, it is preferable to use oxide semiconductor transistors for transistors M11, M12, and M15, which are connected in series with capacitor C2 or C3. Similarly, using oxide semiconductor transistors for other transistors can reduce manufacturing costs.

[0619] For example, the off-current value of an OS transistor per 1 μm channel width at room temperature is 1 aA (1 × 10⁻¹⁰). -18 A) Below, 1zA(1×10 -21 A) Less than or equal to, or 1yA(1×10 -24 A) It can be less than or equal to the following. Note that the off-current value of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1 × 10⁻¹⁰). -15 A) More than 1pA (1×10 -12 A) The answer is as follows. Therefore, it can be said that the off-current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0620] Furthermore, transistors M11 to M17 can also be transistors in which silicon is applied as the semiconductor in which the channel is formed. In particular, using highly crystalline silicon such as single-crystal silicon or polycrystalline silicon is preferable because it can achieve a high field-effect mobility, enabling faster operation.

[0621] Alternatively, a configuration may be used in which one or more transistors among transistors M11 to M17 have oxide semiconductors applied, and the others have silicon applied.

[0622] Note that in Figures 48(G) and 48(H), the transistors are shown as n-channel transistors, but p-channel transistors can also be used.

[0623] It is preferable that the transistors in pixel circuit PIX1 and pixel circuit PIX2 be formed side by side on the same substrate. In particular, it is preferable to configure the transistors in pixel circuit PIX1 and pixel circuit PIX2 to be mixed within a single region and arranged periodically.

[0624] Furthermore, it is preferable to provide one or more layers having either or both transistors and / or capacitors in a position that overlaps with the light-receiving device PD or light-emitting device EL. This reduces the effective area occupied by each pixel circuit, enabling the realization of a high-definition light-receiving or display unit.

[0625] To increase the luminescence brightness of the light-emitting device (EL) included in the pixel circuit, it is necessary to increase the amount of current flowing through the EL. To achieve this, the source-drain voltage of the drive transistor included in the pixel circuit must be increased. Compared to Si transistors, OS transistors have a higher breakdown voltage between the source and drain, allowing a higher voltage to be applied to the source-drain of an OS transistor. As a result, by using an OS transistor as the drive transistor in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, thereby increasing the luminescence brightness of the light-emitting device.

[0626] Furthermore, when the transistor operates in the saturation region, OS transistors exhibit smaller changes in source-drain current in response to changes in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as driving transistors in the pixel circuit, the current flowing between the source and drain can be precisely controlled by changes in gate-source voltage, thereby controlling the amount of current flowing to the light-emitting device. This allows for a wider range of tonal gradations in the pixel circuit.

[0627] Furthermore, in terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using OS transistors as driving transistors, for example, a stable current can be supplied to a light-emitting device even if there are variations in the current-voltage characteristics of the light-emitting device containing EL material. In other words, when operating in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting device.

[0628] As described above, by using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "suppression of black level floating," "increase in luminescence brightness," "multi-gradation," and "suppression of variations in the characteristics of the light-emitting device."

[0629] Furthermore, a display device according to one aspect of the present invention can have a variable refresh rate. For example, power consumption can be reduced by adjusting the refresh rate according to the content displayed on the display device (for example, within a range of 0.01 Hz to 240 Hz). In addition, a drive that reduces the power consumption of the display device by driving with a reduced refresh rate may be called an idling stop (IDS) drive.

[0630] Furthermore, the drive frequency of the touch sensor or near-touch sensor may be changed according to the refresh rate mentioned above. For example, if the refresh rate of the display device is 120Hz, the drive frequency of the touch sensor or near-touch sensor can be set to a frequency higher than 120Hz (typically 240Hz). This configuration enables low power consumption and increases the response speed of the touch sensor or near-touch sensor.

[0631] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0632] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0633] (Embodiment 6) This embodiment describes a high-resolution display device. 【063...

Claims

Claim 1: A display device having a first light-emitting element, a second light-emitting element, and a light-receiving element, wherein the first light-emitting element has a first electrode, a first light-emitting layer on the first electrode, a common layer on the first light-emitting layer, a first common electrode on the common layer, and a second common electrode of the first common electrode; the second light-emitting element has a second electrode, a second light-emitting layer on the second electrode, the common layer on the second light-emitting layer, the first common electrode on the common layer, and the second common electrode on the first common electrode; the light-receiving element has a third electrode, a photoelectric conversion layer on the third electrode, the common layer on the photoelectric conversion layer, and the first common electrode on the common layer; the photoelectric conversion layer has a region that does not overlap with the second common electrode; the first common electrode has a region in contact with the second common electrode; a display device in which the visible light transmittance of the first common electrode is higher than the visible light transmittance of the second common electrode. Claim 2: The display device according to claim 1, wherein an optical adjustment layer is provided between the first electrode and the first light-emitting layer and between the second electrode and the second light-emitting layer. Claim 3: The display device according to claim 1 or 2, having a resin layer, wherein the resin layer is located between the second light-emitting layer and the photoelectric conversion layer. Claim 4: The display device according to claim 3, having an insulating layer, wherein the insulating layer is located between the second light-emitting layer and the resin layer and between the photoelectric conversion layer and the resin layer. Claim 5: The display device according to claim 1 or 2, wherein the common layer has at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, or an electron injection layer. Claim 6: A display module having the display device according to claim 1 or 2, and at least one of a connector and an integrated circuit. Claim 7: The display module according to claim 6, and an electronic device having at least one of a battery, a camera, a speaker, and a microphone.

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