Optical modulator and display unit

Abstract

To prevent color shift in composite light emitted from an optical modulator.SOLUTION: An optical modulator of the present invention comprises: a first electro-optical device that has a first light-emitting device including a luminous layer emitting light including a red wavelength range; a second electro-optical device that has a second light-emitting device including a luminous layer emitting light including a green wavelength range; a third electro-optical device that has a third light-emitting device including a luminous layer emitting light including a blue wavelength range; and a prism that combines the rays of light emitted from the first electro-optical device, the second electro-optical device, and the third electro-optical device. The first light-emitting device, the second light-emitting device, and the third light-emitting device each have a first electrode, a second electrode, and a conductive layer that is provided between the first electrode and the luminous layer and has a lower reflectance to the light emitted from the luminous layer than that of the first electrode. The thickness of the conductive layer of the third light-emitting device is smaller than the thickness of the conductive layer of the first light-emitting device and the thickness of the conductive layer of the second light-emitting device.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a light modulation device and a display device. [Background technology]

[0002] In recent years, organic electroluminescence (EL) panels using thin film transistors (TFTs) or silicon (Si) semiconductors as backplanes have been developed. For example, in display devices including projectors, an image light generating device can be realized using an organic EL panel (electro-optical device) instead of a combination of a light source device that generates red, green, and blue light and a liquid crystal panel that receives the colored light emitted from the light source device and generates image light corresponding to each color.

[0003] For example, Patent Document 1 discloses an image light generating device (light modulation device) that includes a first image display panel, a second image display panel, and a third image display panel that correspond to three color lights, and a cross dichroic prism that combines the image lights emitted from each image display panel. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2020-060685 Summary of the Invention [Problem to be solved by the invention]

[0005] In the image light generating device disclosed in the aforementioned Patent Document 1, the life characteristics of the image display panels are largely dependent on the optical properties of the light-emitting materials used in the image display panels and the configuration of the image display panels. Therefore, it is believed that the life characteristics of the first image display panel, the second image display panel, and the third image display panel differ depending on the wavelength bands of the corresponding color lights. When an image light generating device or a display device is configured using multiple image display panels with different life characteristics, the difference in degradation rate during operation can cause color shift in the combined light obtained by combining the color lights and image lights output from the multiple image display panels, potentially degrading the quality of the image light generating device or the display device. [Means for solving the problem]

[0006] In order to solve the above problem, one embodiment of the optical modulation device of the present invention comprises a first electro-optical device having a first light-emitting element including a light-emitting layer that emits light including a red wavelength range, a second electro-optical device having a second light-emitting element including a light-emitting layer that emits light including a green wavelength range, a third electro-optical device having a third light-emitting element including a light-emitting layer that emits light including a blue wavelength range, and a prism that combines the light emitted from the first electro-optical device, the second electro-optical device, and the third electro-optical device, wherein each of the first light-emitting element, the second light-emitting element, and the third light-emitting element has a first electrode, a second electrode, and a conductive layer that is provided between the first electrode and the light-emitting layer and has a lower reflectivity for the light emitted from the light-emitting layer than the first electrode, and the thickness of the conductive layer of the third light-emitting element is thinner than the thickness of the conductive layer of the first light-emitting element and the thickness of the conductive layer of the second light-emitting element. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a schematic diagram illustrating a configuration of an optical modulation device according to a first embodiment. [Figure 2] 2 is a schematic diagram illustrating a configuration of an electro-optical device of the optical modulation device of FIG. 1. FIG. [Figure 3] 3 is an equivalent circuit diagram of a pixel circuit included in each pixel of the electro-optical device of FIG. 2. FIG. [Figure 4] 3 is a cross-sectional view showing the configuration of a pixel circuit of the electro-optical device of FIG. 2. [Figure 5] FIG. 5 is an enlarged view of the cross section of FIG. [Figure 6] 1 is a perspective view showing a configuration of a display device according to a first embodiment. [Figure 7] 7 is a schematic diagram showing the configuration of an optical system of a virtual image display unit of the display device of FIG. 6. [Figure 8] FIG. 8 is a diagram for explaining the optical path of the optical system of FIG. [Figure 9] FIG. 10 is a cross-sectional view showing the configuration of a pixel circuit of an electro-optical device in a light modulation device according to a second embodiment. [Figure 10] 1 is a schematic diagram illustrating a configuration of a display device of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0008] [First embodiment] A first embodiment of the present invention will be described below with reference to Figures 1 to 8. In the following drawings, the scale of the dimensions of some components may be changed to make them easier to see.

[0009] (optical modulation device) 1 is a schematic diagram showing the configuration of an optical modulation device 1 according to the first embodiment. As shown in FIG. 1, the optical modulation device 1 includes electro-optical devices 10R, 10G, and 10B, and a dichroic prism 20.

[0010] The electro-optical device 10R is a self-luminous electro-optical device that emits red image light LR to a dichroic prism 20. The electro-optical device 10R is a device that uses, for example, organic light emitting diodes (OLEDs) as light emitting elements, and includes a pixel region 12R that includes multiple pixels 11R, and a non-pixel region 13R. The red wavelength range of the image light LR includes, for example, a wavelength range from 610 nm to 680 nm. The multiple pixels 11R of the electro-optical device 10R emit red light. The image light LR emitted from the electro-optical device 10R is composed of red light emitted from each of the multiple pixels 11R, and is modulated by an image signal input to the multiple pixels 11R.

[0011] The surface 14a of the substrate 14 of the electro-optical device 10R faces the incident surface 23 of the dichroic prism 20 for red light, and is bonded to the incident surface 23 via a light-transmitting adhesive layer 40R. In other words, the electro-optical device 10R is disposed so that the image light LR is incident perpendicularly to the incident surface 23.

[0012] The electro-optical device 10G is a self-luminous electro-optical device that emits green image light LG to a dichroic prism 20. Like the electro-optical device 10R, the electro-optical device 10G is a device that uses, for example, an OLED as a light-emitting element, and includes a pixel region 12G including a plurality of pixels 11G and a non-pixel region 13G. The green wavelength range of the image light LG includes, for example, a wavelength range from 495 nm to 570 nm. The plurality of pixels 11G of the electro-optical device 10G emit green light. The image light LG emitted from the electro-optical device 10G is composed of green light emitted from each of the plurality of pixels 11G and is modulated by an image signal input to the plurality of pixels 11R.

[0013] The surface 14a of the substrate 14 of the electro-optical device 10G faces the green light incident surface 22 of the dichroic prism 20 and is bonded to the incident surface 22 via a light-transmitting adhesive layer 40G. In other words, the electro-optical device 10G is disposed so that the image light LG is incident perpendicularly to the incident surface 22.

[0014] The electro-optical device 10B is a self-luminous electro-optical device that emits blue image light LB to a dichroic prism 20. Like the electro-optical devices 10R and 10G, the electro-optical device 10B is a device that uses, for example, OLEDs as light-emitting elements and includes a pixel region 12B including multiple pixels 11B and a non-pixel region 13B. That is, each of the electro-optical devices 10R, 10G, and 10B is an organic EL (Electro-Luminescence) panel. The blue wavelength range of the image light LB includes, for example, a wavelength range from 450 nm to 490 nm. The multiple pixels 11B of the electro-optical device 10B emit blue light. The image light LB emitted from the electro-optical device 10B is composed of blue light emitted from each of the multiple pixels 11B.

[0015] The surface 14a of the substrate 14 of the electro-optical device 10B faces the blue light incident surface 21 of the dichroic prism 20 and is bonded to the incident surface 21 via a light-transmitting adhesive layer 40B. In other words, the electro-optical device 10B is disposed so that the image light LB is incident perpendicularly to the incident surface 21.

[0016] Each of the image lights LG, LB, and LR is unpolarized light that has no polarization characteristics and no specific vibration direction. Note that unpolarized light, i.e., light that has no polarization characteristics, is not completely unpolarized and contains a certain amount of polarized component, but has a degree of polarization within a range that is considered not to have a significant effect on the optical performance of optical components, such as a dichroic mirror.

[0017] The dichroic prism 20 is composed of a light-transmitting member having a rectangular prism shape. The rectangular prism-shaped light-transmitting member is composed of four triangular prism-shaped light-transmitting members combined together. The dichroic prism 20 has incident surfaces 21, 22, and 23 and an exit surface 24. The dichroic prism 20 further has a first dichroic mirror 25 that does not have polarization separation properties and a second dichroic mirror 26 that does not have polarization separation properties. The first dichroic mirror 25 and the second dichroic mirror 26 intersect with each other at an angle of 90° in a plan view. The first dichroic mirror 25 reflects the image light LB incident through the incident surface 21 toward the exit surface 24 and transmits the image light LG incident through the incident surface 22 toward the exit surface 24. The second dichroic mirror 26 reflects the image light LR incident through the incident surface 23 toward the exit surface 24, and transmits the image light LG incident through the incident surface 22 toward the exit surface 24. Due to the characteristics of the first dichroic mirror 25 and the second dichroic mirror 26, the image lights LG, LB, and LR are combined together to generate composite image light LW, which is emitted from the exit surface 24.

[0018] (Electro-optical device) Next, the configuration of the electro-optical device 10R will be described. FIG. 2 is a plan view showing the configuration of the electro-optical device 10R. Hereinafter, the horizontal direction of the surface 14a of the substrate 14 of the electro-optical device 10R is defined as the X direction, and the vertical direction perpendicular to the X direction of the surface 14a is defined as the Y direction. As shown in FIG. 2, the surface 14a includes a pixel region 12R and a non-pixel region 13R. In the pixel region 12R, a plurality of pixels 11R are arranged in a matrix along the X and Y directions. The pixel region 12R is a rectangular region when viewed from a direction perpendicular to the X and Y directions. Hereinafter, the state viewed from a direction perpendicular to the X and Y directions may be referred to as a plan view. The pixel region 12R includes a plurality of scanning lines 31 extending parallel to the X direction and a plurality of data lines 33 extending parallel to the Y direction. The pixels 11R are configured corresponding to each of the regions where the plurality of scanning lines 31 and the plurality of data lines 33 intersect. The pixel circuit of the pixel 11R will be described later.

[0019] The non-pixel region 13R includes a peripheral region 19 and a mounting region 16. The peripheral region 19 is a rectangular frame-shaped region that surrounds the pixel region 12R when viewed from a direction perpendicular to the X and Y directions. A drive circuit 35 that drives the multiple pixels 11R is provided in the peripheral region 19. The drive circuit 35 includes a scanning line drive circuit 36 ​​and a data line drive circuit 37. In the electro-optical device 10G, as described above, the drive circuit 35 is formed on the surface 14a of the substrate 14, and therefore the electro-optical device 10R is a device with a built-in circuit configured with active elements including transistors.

[0020] The mounting region 16 is an area provided on the opposite side of the pixel region 12R in the Y direction from the data line driving circuit 37 provided in the peripheral region 19, i.e., an area provided outside the peripheral region 19. A plurality of mounting terminals 39 are provided in the mounting region 16. Video signals and power supply voltages required to drive at least the plurality of pixels 11R of the electro-optical device 10R are input to the mounting terminals 39 from an external circuit via, for example, wiring of a flexible flat cable (not shown).

[0021] Fig. 3 is an equivalent circuit diagram of a pixel circuit included in pixel 11R. As shown in Fig. 3, pixel 11R includes a light-emitting element 15, a drive transistor TDR, an emission control transistor TEL, a selection transistor TSL, and a capacitance element C. Fig. 3 illustrates the P-type drive transistor TDR, emission control transistor TEL, and selection transistor TSL of pixel 11R, but N-type transistors may be used instead of these P-type transistors.

[0022] The light-emitting element 15 is an organic EL element. The light-emitting layer 46 of the light-emitting element 15 is made of an organic EL material and is interposed between a first electrode E1, i.e., an anode, and a second electrode E2, i.e., a cathode. The first electrode E1 is formed individually for each pixel 11R, and the second electrode E2 is continuous across multiple pixels 11R. The light-emitting element 15 is disposed in a current path connecting a first power supply line 48 and a second power supply line 49. The first power supply line 48 is a power supply wiring to which a high-side power supply potential VEL is supplied, and the second power supply line 49 is a power supply wiring to which a low-side power supply potential VCT is supplied.

[0023] The driving transistor TDR and the light-emitting control transistor TEL are arranged in series with the light-emitting element 15 on a current path connecting the first power line 48 and the second power line 49. Specifically, one of a pair of current terminals of the driving transistor TDR is connected to the first power line 48 and constitutes one capacitance of the source / drain capacitance. The one capacitance of the driving transistor TDR is, for example, a source capacitance. The other current terminal of the pair of current terminals of the driving transistor TDR is connected to one of the pair of current terminals of the light-emitting control transistor TEL and constitutes the other capacitance of the source / drain capacitance. The other capacitance of the driving transistor TDR is, for example, a drain capacitance.

[0024] The light-emission control transistor TEL functions as a switch that controls the conduction state between the other capacitor of the drive transistor TDR and the first electrode E1 of the light-emitting element 15, i.e., either the conductive or non-conductive state. The drive transistor TDR generates a drive current whose amount corresponds to the voltage between its gate and source. When the light-emission control transistor TEL is controlled to the on state, the drive current is supplied from the drive transistor TDR to the light-emitting element 15 via the light-emission control transistor TEL, causing the light-emitting element 15 to emit light at a brightness corresponding to the amount of the drive current. When the light-emission control transistor TEL is controlled to the off state, the supply of drive current to the light-emitting element 15 is cut off, causing the light-emitting element 15 to turn off. The gate of the light-emission control transistor TEL is connected to a control line 34.

[0025] The selection transistor TSL functions as a switch that controls the conduction state between the data line 33 and the gate of the drive transistor TDR (i.e., either a conductive or non-conductive state). The gate of the selection transistor TSL is connected to the scanning line 31. The capacitance element C is an electrostatic capacitance with a dielectric interposed between a first electrode C1 and a second electrode C2. The first electrode C1 is connected to the gate of the drive transistor TDR, and the second electrode C2 is connected to the first power supply line 48, i.e., the source of the drive transistor TDR. Therefore, the capacitance element C maintains the voltage between the gate and source of the drive transistor TDR.

[0026] In the pixel circuits shown in FIGS. 2 and 3, the data line driving circuit 37 supplies a grayscale potential corresponding to a grayscale specified for each pixel 11R by an image signal supplied from an external circuit to multiple data lines 33 in parallel for a predetermined write period, i.e., a predetermined horizontal scanning period. The scanning line driving circuit 36 ​​sequentially selects each of the multiple scanning lines 31 for each write period by supplying a scanning signal to each scanning line 31. The selection transistor TSL of the pixel 11R corresponding to the scanning line 31 selected by the scanning line driving circuit 36 ​​transitions to an ON state. Therefore, the gate of the driving transistor TDR of each pixel 11R is supplied with a grayscale potential via the data line 33 and the selection transistor TSL, and a voltage corresponding to the grayscale potential is held in the capacitance element C. After the selection of a scanning line 31 for the write period is completed, each scanning line driving circuit 36 ​​supplies a control signal to each control line 34 to control the light-emission control transistor TEL of each pixel 11R corresponding to the control line 34 to an ON state. Therefore, a drive current according to the voltage held in the capacitance element C in the immediately preceding writing period is supplied from the drive transistor TDR to the light emitting element 15 via the light emitting control transistor TEL.

[0027] As described above, the light-emitting elements 15 emit light at a luminance according to the gradation potential, so that any image light LR specified by the image signal is emitted from the display area of ​​the electro-optical device 10 R. In other words, since the electro-optical device 10 R has the above-described electrical configuration, it is possible to emit desired image light LR using multiple light-emitting elements 15 without using a liquid crystal panel.

[0028] FIG. 4 is a cross-sectional view of a pixel circuit of a pixel 11R of the electro-optical device 10R. As shown in FIG. 4, an active region 140 of a transistor including a select transistor TSL of the pixel 11R is formed in the substrate 111. The surface of the active region 140 is covered with a gate insulating film B0. The active region 140 refers to a source region or a drain region. Hereinafter, a direction perpendicular to the X and Y directions is referred to as the Z direction. The surface 111a of the substrate 111 is parallel to a plane including the X and Y directions. The Z direction refers to the direction perpendicular to the surface 111a, away from the surface 111a. The front of the Z direction may be referred to as the top or front side, and the rear of the Z direction may be referred to as the bottom or bottom side.

[0029] A gate electrode layer GSL is formed on the surface of the gate insulating film B0. A multilayer wiring layer is formed on the upper side of the gate electrode layer GSL, in which a plurality of insulating layers BA to BE and a plurality of wiring layers WA to WE are alternately stacked. Each wiring layer is formed of a low-resistance conductive material containing, for example, aluminum (Al) or gold (Au).

[0030] A wiring layer WA including the scanning line 31 shown in FIG. 3 is formed on the surface of the insulating layer BA. A wiring layer WB including the data line 33 and the first electrode C1 shown in FIG. 3 is formed on the insulating layer BB. A wiring layer WC including the second electrode C2 shown in FIG. 3 is formed on the insulating layer BC. A wiring layer WD including the first power line 48 shown in FIG. 3 is formed on the surface of the insulating layer BD. A wiring layer WE including wires 67 and 69 is formed on the insulating layer BE. The substrate 14 of the electro-optical device 10R may be formed by the substrate 111, the gate insulating film B0, the gate electrode layer GSL, the insulating layers BA to BD, and the wiring layers WA to WC, or the above-mentioned components may be separately provided on the surface 14a of the substrate 14.

[0031] In the pixel region 12R where a plurality of pixels 11R are arranged in a matrix, an insulating layer 60 is formed on the insulating layer BE. The insulating layer 60 is a layer that serves to set the resonance wavelength of the optical resonator to an appropriate wavelength and is formed of a light-transmitting insulating material. The insulating material of the insulating layer 60 is, for example, silicon nitride (SiN) or silicon oxide (SiO2). The optical resonator is formed in the Z direction by a first power line 48 as a reflective film, the insulating layer BE, the insulating layer 60, a first electrode E1 as a transparent electrode, a conductive layer UR, a light-emitting layer 46, and a second electrode E2 as a semi-reflective / semi-transmissive electrode.

[0032] The optical path length dR between the surface of the first power line 48 and the bottom surface of the second electrode E2 in the optical resonator described above is adjusted according to the thicknesses of the insulating layer 60 and the first electrode E1. In the electro-optical device 10R, red light is extracted from the second electrode E2, thereby setting the resonant wavelength of the light emitted from the electro-optical device 10R. Specifically, because red image light LR is emitted from the electro-optical device 10R, the optical path length dR of the optical resonator is set to an appropriate distance for the red image light LR, taking the red wavelength range into consideration.

[0033] A first electrode E1 is formed on the surface of the insulating layer 60 for each pixel 11R included in the pixel region 12R. A conductive layer UR is formed on the surface of each first electrode E1. The first electrode E1 constitutes a transparent electrode and is made of a light-transmitting conductive material. The conductive material of the first electrode E1 is, for example, indium tin oxide (ITO) or indium zinc oxide (IZO). The conductive layer UR is made of a light-transmitting conductive material. The conductive material of the conductive layer UR includes, for example, at least one of titanium (Ti)-containing nitride, i.e., titanium nitride (TiN), molybdenum (Mo), chromium (Cr), and nickel (Ni). The insulating layer 60 may be made of a light-transmitting insulating material, such as SiN or SiO2, and may be a single layer or a laminate containing these materials.

[0034] An insulating layer 65 is formed around the laminated structure of the first electrode E1 and the conductive layer UR in a plan view. In other words, the insulating layer 65 defines the installation area of ​​the first electrode E1 and the conductive layer UR, i.e., the pixel 11R. An emitting layer 46 is formed on the surface of the conductive layer UR and the insulating layer 65. The emitting layer 46 is composed of an organic layer including an emitting layer formed by containing an organic EL material that emits red light, and emits, i.e., emits, red light when supplied with current. Note that the emitting layer 46 may be composed of a laminate provided with a transport layer or injection layer for electrons and holes supplied to the emitting layer.

[0035] A second electrode E2 serving as a semi-reflective and semi-transmissive electrode is formed on the light-emitting layer 46 across the entire pixel region 12R. The region of the light-emitting layer 46 sandwiched between the first electrode E1 and the second electrode E2 serves as the light-emitting region and emits light. The second electrode E2 also functions as a semi-reflective and semi-transmissive layer that transmits a portion of the light that reaches it and reflects at least a portion of the remaining light. The light-emitting layer 46 is made of a light-reflective conductive material. The conductive material of the light-emitting layer 46 is, for example, an MgAg alloy containing silver (Ag) or magnesium (Mg). The thickness of the light-emitting layer 46 is sufficiently thin, taking into account the optical properties of the MgAg alloy, so that it can function as a semi-reflective and semi-transmissive electrode as described above.

[0036] In the non-pixel region 13R, a metal wiring 116 including a plurality of wirings 66 to 69 is formed in the same layer as the conductive layer formed in the pixel region 12R. The wirings 66 to 69 are electrically connected via contact plugs in which a conductive material is buried in contact holes in an insulating layer formed between the wirings, for example.

[0037] A sealing body 70 is formed on the second electrode E2 over the entire area within a plane parallel to the surface 111a of the substrate 111. The sealing body 70 is a light-transmitting film that seals each component formed on the surface 111a of the substrate 111 to prevent the intrusion of outside air and moisture. The sealing body 70 is composed of a laminated film of a first sealing layer 71, a second sealing layer 72, and a third sealing layer 73. The third sealing layer 73 is formed on the second electrode E2 and is in contact with the surface of the second electrode E2. The third sealing layer 73 is composed of, for example, an insulating inorganic material. The third sealing layer 73 is formed of, for example, a Si compound, such as SiN or SiO2. The first sealing layer 71 also functions as a planarizing film that fills the steps on the surfaces of the second electrode E2 and the third sealing layer 73, i.e., the distance in the Z direction. The first sealing layer 71 is formed of, for example, a light-transmitting organic material such as epoxy resin. Furthermore, second sealing layer 72 is formed over the entire area of ​​substrate 111. Second sealing layer 72 is formed of, for example, a nitride or oxynitride of Si, which has excellent water resistance and heat resistance.

[0038] A colored layer 81R is formed on the surface of the second sealing layer 72 of the sealing body 70 in the pixel region 12R, and a shielding layer 80 is formed in the non-pixel region 13R. In the pixel region 12R, the colored layer 81R allows red light to pass through in the Z direction, and in the non-pixel region 13R, the shielding layer 80 blocks the red light in the Z direction. In the electro-optical device 10R, a light-transmitting cover substrate 18 is fixed with an adhesive 17 on the side opposite the substrate 111 in the Z direction with respect to the colored layer 81R and the shielding layer 80. With this configuration, the colored layer 81R and the shielding layer 80 are protected by the cover substrate 18.

[0039] Fig. 5 is an enlarged view of a portion of the pixel circuit of pixel 11R of the electro-optical device 10R, and is an enlarged view of region R100 shown in Fig. 4. As shown in Fig. 5, the pixel circuit of pixel 11R is configured with an organic EL element in which a light-emitting layer 46 containing a red light-emitting organic EL material is interposed between a first electrode E1 and a second electrode E2. In such an organic EL element, the first electrode E1 acts as an anode, and the second electrode E2 acts as a cathode.

[0040] Examples of materials for the first electrode E1 include oxides such as ITO, IZO, In3O3, SnO2, SnO2 containing Sb, and ZnO containing Al, as well as gold (Au), platinum (Pt), silver (Ag), copper (Cu), and alloys containing these. The first electrode E1 may be made of one of these materials or a combination of two or more of these materials. The first electrode E1 is, for example, a laminate of a first conductive layer 151 and a second conductive layer 152 formed from the aforementioned materials. The average thickness of the first electrode E1, i.e., the size in the Z direction, is preferably approximately 10 nm to 200 nm, more preferably approximately 50 to 150 nm.

[0041] As described above, the material of the conductive layer UR can be at least one of TiN, Mo, Cr, and Ni. The reflectance of the conductive layer UR to red light is at least lower than that of the first electrode E1. By providing the conductive layer UR, which has a lower reflectance than the first electrode E1, on the surface of the first electrode E1, which has a high reflectance as described above, the amount of red light irradiated onto the first electrode E1 is adjusted, and the amount of red light irradiated onto the first electrode E1 is reduced compared to when at least the conductive layer UR is not provided.

[0042] Furthermore, since the conductive layer UR made of a material different from that of the first electrode E1 is provided in contact with the surface of the first electrode E1, deterioration of the first electrode E1 is suppressed. Note that when at least one of Mo, Cr, and Ni is used as the material of the conductive layer UR, a small amount of oxide of at least one of the Mo, Cr, and Ni employed may additionally be formed in the manufacturing process of the conductive layer UR.

[0043] The thickness of the conductive layer UR is preferably, for example, 0.5 nm to 20 nm. If the thickness of the conductive layer UR is less than 0.5 nm, the above-mentioned effect of providing the conductive layer UR on the surface of the first electrode E1 is difficult to achieve, and the expected effect is not achieved. Furthermore, if the thickness of the conductive layer UR exceeds 20 nm, the reflectance of the laminate of the first electrode E1 and the conductive layer UR to red light is excessively reduced, which may increase the power consumption of the electro-optical device 10R.

[0044] When viewed in a plan view in the reverse direction along the Z direction, the insulating layer 65 is a laminate of first insulating layers 161 provided without gaps between the multiple first electrodes E1, and a second insulating layer provided on the surface of the first insulating layer 161. Each of the first insulating layer 161 and the second insulating layer 162 is formed of, for example, SiO2.

[0045] In the first embodiment, the conductive layer UR is formed, in plan view, larger than the width AR and area of ​​the opening 200 defined for each pixel 11R by the second insulating layer 162 of the insulating layer 65. Specifically, the first conductive layer 151 and the second conductive layer 152 of the first electrode E1 overlap each other in plan view and have the same size and shape. The surface of the first insulating layer 161 of the insulating layer 65 is located below the surface of the second conductive layer 152, which is provided on the upper layer of the first electrode E1. The end URe of the conductive layer UR is located closer to the center than the end of the first electrode E1 in plan view. In other words, the conductive layer UR is formed smaller than the first electrode E1 in plan view. The second insulating layer 162 of the insulating layer 65 is provided, in plan view, only on the surface of the first insulating layer 161, the side surfaces and surfaces of the end of the second conductive layer 152 of the first electrode E1, and the surface of the end URe of the conductive layer UR. That is, the end portion of the first electrode E1, ie, the peripheral portion thereof, and the peripheral portion of the conductive layer UR are covered with the second insulating layer 162 of the insulating layer 65 in plan view.

[0046] The thickness of the second insulating layer 162 of the insulating layer 65 is constant within the XY plane including the X and Y directions. The height of the second insulating layer 162, i.e., the position in the Z direction of the surface of the second insulating layer 162, varies in three steps: from a height elevated by a constant thickness of the second insulating layer 162 above the surface of the first insulating layer 161, to a height elevated by a constant thickness of the second insulating layer 162 above the surface of the second conductive layer 152, and finally to a height elevated by a constant thickness of the second insulating layer 162 above the surface of the conductive layer UR. Openings 200 are formed by the spaces between the second insulating layers 162 in plan view.

[0047] The light-emitting layer 46 is provided on the surface of the second insulating layer 162 of the insulating layer 65 and on the surface of the conductive layer UR exposed in the opening 200. The thickness of the light-emitting layer 46 varies appropriately within the XY plane and is not constant. However, the height of the light-emitting layer 46, i.e., the position of the surface of the light-emitting layer 46 in the Z direction, varies in multiple steps depending on the step of the second insulating layer 162 of the insulating layer 65 and the step between the uppermost surface of the second insulating layer 162 and the surface of the conductive layer UR in the region of the opening 200. The light-emitting layer 46 is composed of a laminate in which, for example, a hole injection layer, a hole transport layer, a red light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer (not shown) are sequentially stacked from rear to front in the Z direction.

[0048] Holes are injected from the first electrode E1 into the hole injection layer of the light-emitting layer 46. Materials for the hole injection layer include organic compounds having a cyano group, such as HAT-CN, in which a cyano group is introduced into a hexaazatophenylene (HAT) derivative, which is a material for an organic n-type semiconductor.

[0049] The hole transport layer of the light-emitting layer 46 has a function of transporting holes injected from the first electrode E1, which is an anode, into the hole injection layer to the red light-emitting layer. Examples of materials for the hole transport layer include amine-based compounds such as N,N,N',N'-tetraphenylbenzidine and derivatives thereof, and the layer may be made of one of these compounds or a combination of two or more of these compounds.

[0050] The red light-emitting layer of the light-emitting layer 46 includes, for example, a red light-emitting material that emits red light and a host material that holds the red light-emitting material. The red light-emitting material may be one of various red fluorescent materials or red phosphorescent materials, or a combination of two or more of these materials. The red fluorescent material is not particularly limited as long as it emits red fluorescence, and examples thereof include perylene derivatives such as tetraaryldiindenoperylene derivatives, europium complexes, benzopyran derivatives, rhodamine derivatives, benzothioxanthene derivatives, porphyrin derivatives, Nile Red, 2-(1,1-dimethylethyl)-6-(2-(2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H-benzo(ij)quinolizin-9-yl)ethenyl)-4H-pyran-4H-ylidene)propanedinitrile (DCJTB), and 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM). The red phosphorescent material is not particularly limited as long as it emits red phosphorescence, and examples thereof include metal complexes represented by iridium (Ir), ruthenium (Ru), Pt, osmium (Os), rhenium (Re), and palladium (Pd), and at least one of the ligands of these metal complexes may have a phenylpyridine skeleton, a bipyridyl skeleton, a porphyrin skeleton, or the like.

[0051] The host material is not particularly limited as long as it exhibits the above-described functions with respect to the red light-emitting material. When the red light-emitting material contains a red fluorescent material, examples of the host material include anthracene derivatives, anthracene derivatives such as 2-t-butyl-9,10-di(2-naphthyl)anthracene (TBADN), acene derivatives (acene compounds) such as tetracene derivatives, distyrylarylene derivatives, perylene derivatives, distyrylbenzene derivatives, distyrylamine derivatives, quinolinolato metal complexes such as tris(8-quinolinolato)aluminum complex (Alq3), triarylamine derivatives such as triphenylamine tetramers, oxadiazole derivatives, silole derivatives, dicarbazole derivatives, oligothiophene derivatives, benzopyran derivatives, triazole derivatives, benzoxazole derivatives, benzothiazole derivatives, quinoline derivatives, and 4,4'-bis(2,2'-diphenylvinyl)biphenyl (DPVBi). Furthermore, when the red light-emitting material contains a red phosphorescent material, examples of the host material include carbazole derivatives such as 3-phenyl-4-(1'-naphthyl)-5-phenylcarbazole and 4,4'-N,N'-dicarbazolebiphenyl (CBP), and the host material may be one of these or a combination of two or more of these.

[0052] The material of the hole blocking layer of the light-emitting layer 46 is preferably an organic material that can provide the effect of blocking upward movement of holes, and is not particularly limited as long as the material can be expected to provide the above-mentioned effect.

[0053] The electron transport layer of the light-emitting layer 46 has a function of transporting electrons injected from the second electrode E2 through the electron injection layer to the red-light-emitting layer. Examples of materials constituting the electron transport layer include phenanthroline derivatives such as 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), quinoline derivatives including organometallic complexes having 8-quinolinol or its derivatives as a ligand, such as tris(8-quinolinolato)aluminum (Alq), azaindolizine derivatives, oxadiazole derivatives, perylene derivatives, pyridine derivatives, pyrimidine derivatives, quinoxaline derivatives, diphenylquinone derivatives, and nitro-substituted fluorene derivatives. The electron transport layer may be made of one of these or a combination of two or more of these.

[0054] The electron injection layer of the light-emitting layer 46 functions to improve the efficiency of electron injection from the second electrode E2. Examples of materials for the electron injection layer include various inorganic insulating materials and inorganic semiconductor materials. Examples of inorganic insulating materials include alkali metal chalcogenides (oxides, sulfides, selenides, and tellurides), alkaline earth metal chalcogenides, alkali metal halides, and alkaline earth metal halides. The electron injection layer may be made of one of these materials or a combination of two or more of these materials. By using the above-mentioned materials as the main material for the electron injection layer, the electron injection characteristics can be improved. In particular, the work functions of alkali metal compounds, including alkali metal chalcogenides and alkali metal halides, are significantly smaller than those of other materials. Therefore, by using alkali metal compounds for the electron injection layer, the luminance of the light-emitting layer 46 can be increased. Examples of inorganic semiconductor materials include oxides, nitrides, and oxynitrides containing at least one element selected from the group consisting of lithium (Li), sodium (Na), barium (Ba), calcium (Ca), strontium (Sr), ytterbium (Yb), Al, Ga, In, cadmium (Cd), Mg, Si, thallium (Ta), Sb, and zinc (Zn). The inorganic semiconductor material may be one of these, or a combination of two or more of these.

[0055] The second electrode E2 is an electrode that injects electrons into the electron transport layer via the electron injection layer. The second electrode E2 is preferably made of a material with a small work function. Examples of materials for the second electrode E2 include Li, Mg, Ca, Sr, lanthanum (La), cerium (Ce), Er, Eu, Sc, Y, Yb, Ag, Cu, Al, cesium (Cs), Rb, and alloys containing these. The second electrode E2 may be made of one of these elements or a multi-layer stack of two or more of these elements.

[0056] 1, like the electro-optical device 10R described above, each of the electro-optical devices 10G and 10B shown in Fig. 1 has the electrical structure described in Fig. 3 to Fig. 5. Although not shown, the electro-optical device 10G includes a light-emitting layer 46 made of an organic layer including a green light-emitting layer formed by containing an organic EL material that emits green light including a green wavelength range, instead of the red light-emitting layers of the plurality of light-emitting elements 15 shown in Fig. 3 and Fig. 5.

[0057] The green light-emitting layer includes a green light-emitting material that emits green light and a host material that supports the green light-emitting material. The green light-emitting material is not limited to a specific material, and may be one of various green fluorescent materials or green phosphorescent materials, or a combination of two or more of these materials.

[0058] The green fluorescent material is not particularly limited as long as it emits green fluorescence, and examples thereof include coumarin derivatives, quinacridone and its derivatives such as quinacridone derivatives, 9,10-bis[(9-ethyl-3-carbazole)-vinylenyl]-anthracene, poly(9,9-dihexyl-2,7-vinylenefluorenylene), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(1,4-diphenylene-vinylene-2-methoxy-5-{2-ethylhexyloxy}benzene)], poly[(9,9-dioctyl-2,7-divinylenefluorenylene)-ortho-co-(2-methoxy-5-(2-ethoxyhexyloxy)-1,4-phenylene)], and the material may be one of these, or a combination of two or more of these.

[0059] The green phosphorescent material is not particularly limited as long as it emits green phosphorescence, and examples thereof include metal complexes of Ir, Ru, Pt, Os, Re, and Pd. Among these, preferred green phosphorescent materials are those in which at least one of the ligands of the metal complexes has a phenylpyridine skeleton, a bipyridyl skeleton, or a porphyrin skeleton. More specific examples include fac-tris(2-phenylpyridine)iridium (Ir(ppy)), bis(2-phenylpyridinato-N,C)iridium(acetylacetonate), and fac-tris[5-fluoro-2-(5-trifluoromethyl-2-pyridine)phenyl-C,N]iridium.

[0060] The host material for supporting the green light-emitting material may be the same as the host material described as the host material for the red light-emitting layer, but is preferably an acene-based compound.

[0061] Furthermore, although not shown, the electro-optical device 10G includes a colored layer 81G instead of the colored layer 81R of the electro-optical device 10R described with reference to FIGS. 4 and 5. The colored layer 81G selectively allows transmission of green light in the green wavelength range. Furthermore, in the electro-optical device 10G, the thicknesses of the insulating layer 60 and the first electrode E1 shown in FIGS. 4 and 5 are adjusted to match the wavelength of the green image light LG emitted from the electro-optical device 10G. In the optical resonator of the electro-optical device 10G, the optical path length dB between the surface of the first power line 48, which functions as a reflective film, and the bottom surface of the second electrode E2, which functions as a semi-reflective / semi-transmissive electrode, is optimized to match the wavelength of the image light LG. Furthermore, in the pixel circuit of the electro-optical device 10G, the width, aperture area, and planar shape of the opening 200 of each of the multiple pixels 11G are the same as the width, aperture area, and planar shape of the opening 200 of each of the multiple pixels 11R in the pixel circuit of the electro-optical device 10R.

[0062] Furthermore, the electro-optical device 10B includes, instead of the red light-emitting layers of the plurality of light-emitting elements 15 shown in each of Figures 3 and 5, a light-emitting layer 46 composed of an organic layer including a blue light-emitting layer formed by containing an organic EL material that emits blue light including a blue wavelength range.

[0063] The blue light-emitting layer includes a blue light-emitting material that emits blue light and a host material that supports the blue light-emitting material. The blue light-emitting material is not limited to a specific material and may be one of various blue fluorescent materials or blue phosphorescent materials, or a combination of two or more of these materials.

[0064] The blue fluorescent material is not particularly limited as long as it emits blue fluorescence, and examples thereof include distyrylamine derivatives such as distyryldiamine compounds, fluoranthene derivatives, pyrene derivatives, perylene and perylene derivatives, anthracene derivatives, benzoxazole derivatives, benzothiazole derivatives, benzimidazole derivatives, chrysene derivatives, phenanthrene derivatives, distyrylbenzene derivatives, tetraphenylbutadiene, 4,4'-bis(9-ethyl-3-carbazovinylene)-1,1'-biphenyl (BCz VBi), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,5-dimethoxybenzene-1,4-diyl)], poly[(9,9-dihexyloxyfluorene-2,7-diyl)-ortho-co-(2-methoxy-5-{2-ethoxyhexyloxy}phenylene-1,4-diyl)], poly[(9,9-dioctylfluorene-2,7-diyl)-co-(ethylnylbenzene)], and the material may be one of these, or a combination of two or more of these.

[0065] The blue phosphorescent material is not particularly limited as long as it emits blue phosphorescence, and examples thereof include a metal complex of any of Ir, Ru, Pt, Os, Re, and Pd. Specific examples of blue phosphorescent materials include bis[4,6-difluorophenylpyridinate-N,C2']-picolinate-iridium, tris[2-(2,4-difluorophenyl)pyridinate-N,C2']iridium, bis[2-(3,5-trifluoromethyl)pyridinate-N,C2']-picolinate-iridium, and bis(4,6-difluorophenylpyridinate-N,C2')iridium(acetylacetonate).

[0066] The host material for supporting the blue light-emitting material may be the same as the host material described as the host material for the red light-emitting layer, but is preferably an acene-based compound.

[0067] Furthermore, although not shown, the electro-optical device 10B has a colored layer 81B formed therein instead of the colored layer 81R of the electro-optical device 10R described with reference to FIGS. 4 and 5. The colored layer 81B selectively allows transmission of green light in the green wavelength range. Furthermore, in the electro-optical device 10G, the thicknesses of the insulating layer 60 and the first electrode E1 shown in FIGS. 4 and 5 are adjusted to match the wavelength of the blue image light LB emitted from the electro-optical device 10B. In the optical resonator of the electro-optical device 10B, the optical path length dB between the surface of the first power line 48, which functions as a reflective film, and the bottom surface of the second electrode E2, which functions as a semi-reflective / semi-transmissive electrode, is optimized to match the wavelength and color purity or color gamut of the image light LB. Furthermore, in the pixel circuit of the electro-optical device 10B, the width, opening area and planar shape of the opening 200 of each of the multiple pixels 11B are the same as the width, opening area and planar shape of the opening 200 of each of the multiple pixels 11R and 11G in the pixel circuits of the electro-optical devices 10R and 10G.

[0068] In the electro-optical devices 10R, 10G, and 10B, the optical path lengths dR, dB, and dG between the first power line 48 and the second electrode E2 are adjusted to optimal lengths, so that image light LR having a peak in the red wavelength range is generated in the electro-optical device 10R, image light LG having a peak in the green wavelength range is generated in the electro-optical device 10G, and image light LB having a peak in the blue wavelength range is generated in the electro-optical device 10B between the first power line 48 and the second electrode E2.

[0069] Furthermore, the thickness of the second electrode E2 of the electro-optical device 10B is preferably equal to or less than the thickness of the second electrode E2 of the electro-optical device 10G. The thickness of the second electrode E2 of the electro-optical device 10R is preferably equal to or less than the thickness of the second electrode E2 of the electro-optical device 10B. By setting the thickness of the second electrode E2 in this manner, the luminance of the light emitted by the electro-optical device 10B can be efficiently obtained. Furthermore, by setting the thickness of the second electrode E2 as described above, the overlapping area ratio between the regions surrounded by red, green, and blue when the chromaticities of the image lights LR, LG, and LB are converted into coordinates can be maintained high, and the luminance of the light modulation device 1 can be increased compared to when the thickness of the second electrode E2 is not optimally set.

[0070] When the thickness of the second electrode E2 in the three electro-optical devices 10R, 10G, and 10B is set to satisfy the above-mentioned relationship, the thickness of each second electrode E2 is preferably 10 nm or more and 40 nm or less. Furthermore, when the main material of the second electrode E2 provided in each of the three electro-optical devices 10R, 10G, and 10B is an MgAg alloy, the ratio of Mg to Ag is preferably 1:7 or more and 1:13 or less, for example. These factors can further enhance the above-mentioned effects regarding the emission brightness of the electro-optical device 10B and the emission brightness of the light modulation device 1.

[0071] Furthermore, although not shown, the electro-optical device 10G includes a conductive layer UG instead of the conductive layer UR of the electro-optical device 10R described with reference to FIGS. 4 and 5. The electro-optical device 10B includes a conductive layer UB instead of the conductive layer UR of the electro-optical device 10R described with reference to FIGS. 4 and 5. The conductive layers UG and UB may be made of the same material as the conductive layer UR. In the three electro-optical devices 10R, 10G, and 10B, if the reflectance per unit thickness of the conductive layers UR, UG, and UB for irradiated red, green, and blue light is lower than that of the respective first electrodes E1 and is equal to each other, the thickness tB of the conductive layer UB of at least the electro-optical device 10B is thinner than the thicknesses tG and tR of the conductive layers UG and UR of the electro-optical devices 10G and 10R. For example, the conductive layers UR, UG, and UB of the three electro-optical devices 10R, 10G, and 10B are made of the same material. Furthermore, the brightness half-life, which indicates the life characteristics and driving deterioration related to the emission of blue light from the light-emitting layer 46 of the electro-optical device 10B, is shorter than the brightness half-life related to the emission of green light and red light from the light-emitting layer 46 of the electro-optical devices 10G and 10R. Therefore, after the same amount of use, the brightness of the blue light emitted from the light-emitting layer 46 of the electro-optical device 10B becomes lower than the brightness of the green light and red light emitted from the light-emitting layer 46 of the electro-optical devices 10G and 10R, and color shift due to the brightness of the image light LB being lower than the image lights LG and LR becomes noticeable.

[0072] Conductive layers UR, UG, and UB are provided on the surface of the first electrode E1 of the electro-optical devices 10R, 10G, and 10R, and the thickness tB of the conductive layer UB of the electro-optical device 10B is thinner than the thicknesses tG and tR of the conductive layers UG and UR of the electro-optical devices 10G and 10R, respectively. As a result, the ratio of the amount of blue light reflected by the first electrode E1 and transmitted through the conductive layer UB to the amount of blue light emitted from the light-emitting layer 46 in the electro-optical device 10B is higher than the ratio of the amount of green light and red light reflected by the first electrode E1 and transmitted through the conductive layers UG and UR to the amount of green light and red light emitted from the light-emitting layer 46 in the electro-optical devices 10G and 10R. Therefore, the luminance of the image lights LR, LG, and LB deteriorates at approximately the same rate over drive time.

[0073] Furthermore, when the above-described conditions are satisfied, the half-life of brightness for emitting green light from the light-emitting layer 46 of the electro-optical device 10G may be shorter than the half-life of brightness for emitting red light from the light-emitting layer 46 of the electro-optical device 10R. In this case, after the same amount of use, the brightness of the green light emitted from the light-emitting layer 46 of the electro-optical device 10G will be lower than the brightness of the red light emitted from the light-emitting layer 46 of the electro-optical device 10R, resulting in color shift due to the brightness of the image light LG being lower than the brightness of the image light LR. Therefore, when the half-life of brightness for the light-emitting layer 46 of the electro-optical device 10G is shorter than the half-life of brightness for the electro-optical device 10R, it is preferable that the thickness tG of the conductive layer UG of the electro-optical device 10G be thinner than the thickness tR of the conductive layer UR of the electro-optical device 10R. As a result, the ratio of the amount of green light reflected by the first electrode E1 and transmitted through the conductive layer UG to the amount of green light emitted from the light-emitting layer 46 in the electro-optical device 10G is higher than the ratio of the amount of red light reflected by the first electrode E1 and transmitted through the conductive layer UR to the amount of red light emitted from the light-emitting layer 46 in the electro-optical device 10R. Therefore, the luminance of the image lights LR, LG, and LB deteriorates at approximately the same rate over drive time.

[0074] Next, an example of the characteristics of each of the electro-optical devices 10R, 10G, and 10B having the above-described configuration will be described. In the electro-optical devices 10R, 10G, and 10B, it is assumed that the same materials are selected from the materials exemplified above for the first electrode E1, conductive layers UR, UG, and UB, insulating layer 65, and second electrode E2, which are the main components of the pixel circuit shown in FIG. 5 . Furthermore, in the electro-optical devices 10R, 10G, and 10B, the light-emitting layers 46 of the pixel circuits are also appropriately selected from the materials exemplified above according to the color light. It is assumed that the half-life of the luminance of each color of the light-emitting layers 46 of the electro-optical device 10R is 600 hours, the half-life of the luminance of the light-emitting layers 46 of the electro-optical device 10G is 400 hours, and the half-life of the luminance of the light-emitting layers 46 of the electro-optical device 10R is 300 hours. Furthermore, it is assumed that TiN is selected as the material of the conductive layers UR, UG, and UB.

[0075] Table 1 shows the results of calculating the luminance of white light, the color coordinates (x, y) on the xy chromaticity diagram of white light, and the luminance, color coordinates (x, y) on the xy chromaticity diagram of white light after 300 hours of operation for each of Numerical Examples 1 to 7, in which the thicknesses tR, tG, and tB of the conductive layers UR, UG, and UB of the electro-optical devices 10R, 10G, and 10B were changed using the materials and conditions described above. Δu'v' represents the difference between the color coordinates on the UV chromaticity diagram of white light after 300 hours of operation and the color coordinates on the UV chromaticity diagram of white light at the initial operation. It is said that if Δu'v' is 0.02 or more, a viewer will perceive and visually recognize color shift.

[0076] [Table 1]

[0077] As shown in Table 1, in all of Numerical Examples 1 to 3, the thicknesses tR, tG, and tB of the conductive layers UR, UG, and UB of the electro-optical devices 10R, 10G, and 10B are successively thinner, i.e., at least thickness tB is thinner than thicknesses tG and tB, and thickness tG is thinner than thickness tR. Therefore, 300 hours after the start of driving, the luminance of the red image light LR and the green image light LG emitted from the electro-optical devices 10R and 10G was kept so as not to be significantly higher than the luminance of the blue image light LB emitted from the electro-optical device 10B, the balance of the luminance of the image lights LR, LG, and LB did not fluctuate significantly from the time of initial driving, and Δu'v' was kept to less than 0.02. Furthermore, in all of Numerical Examples 1 to 3, because the thickness tG of the conductive layer UG of the electro-optical device 10G was thinner than the thickness tR of the conductive layer UR of the electro-optical device 10R, the luminance of the red image light LR emitted from the electro-optical device 10R was suppressed so as not to be significantly higher than the luminance of the green image light LG emitted from the electro-optical device 10G. As a result, the balance of the luminance of the image lights LR, LG, and LB did not fluctuate significantly from the time of initial start-up, and Δu′v′ was suppressed to less than 0.02. From the results shown in Numerical Examples 1 to 3, it was confirmed that, by providing thin conductive layers UR, UG, and UB on the surface of the first electrode E1, the luminance of the image light from an electro-optical device having a luminescent layer with a long luminance half-life time, which indicates drive degradation, is suppressed to a luminance close to the luminance of the image light from an electro-optical device having a luminescent layer with a short luminance half-life time, even after the passage of time from the time of initial drive, and Δu′v′ of the white light obtained by combining the image lights LR, LG, and LB is suppressed to less than 0.02.

[0078] Furthermore, in Numerical Example 1, the differences between the thicknesses tR and tG of the conductive layers UR, UG, and UB of the electro-optical devices 10R, 10G, and 10B, and the differences between the thicknesses tG and tB, are equal to each other and are larger than those in Numerical Examples 2 and 3. Furthermore, in Numerical Example 2, the differences between the thicknesses tR and tG of the conductive layers UR, UG, and UB of the electro-optical devices 10R, 10G, and 10B, and the differences between the thicknesses tG and tB, are equal to each other and are larger than those in Numerical Example 3. From the results shown in Numerical Examples 1 to 3, it was confirmed that the shorter the luminance half-life of each color light-emitting layer of the light-emitting layer 46, the thinner the conductive layer UR provided on the surface of the first electrode E1, and the larger the differences between the thicknesses tR, tG, and tB of the conductive layers UR, UG, and UB, the more Δu'v' can be reduced.

[0079] Furthermore, in Numerical Example 4, the thicknesses tR and tG of the conductive layers UR and UG of the electro-optical devices 10R and 10G are equal to each other and are thicker than the thickness tB of the conductive layer UB of the electro-optical device 10B. Even in this case, Δu'v' was suppressed to less than 0.02. The results shown in Numerical Example 4 confirm that Δu'v' can be reduced even after time has passed since initial driving because the thickness tB of the conductive layer UB of the electro-optical device 10B, which includes at least a blue light-emitting layer 46 with the shortest luminance half-life, is thinner than the thicknesses tG and tR of the conductive layers UG and UR of the other electro-optical devices 10G and 10R.

[0080] On the other hand, in Numerical Examples 5 and 6, despite differences in the half-life of the luminance of each color light-emitting layer in the light-emitting layer 46, the thicknesses tR, tG, and tB of the conductive layers UR, UG, and UB of the electro-optical devices 10R, 10G, and 10B are equal. In this case, the luminance of the red image light LR emitted from the electro-optical device 10R is higher than the luminance of the green image light LG emitted from the electro-optical device 10G, and the luminance of the green image light LG emitted from the electro-optical device 10G is higher than the luminance of the blue image light LB emitted from the electro-optical device 10B. As a result, the luminance difference between the image lights LR and LB increases, and Δu'v' reaches 0.02 or more after, for example, 300 hours have passed since initial operation. This may result in a risk of color shift being visually perceived by the observer.

[0081] Furthermore, in Numerical Example 7, the thickness tB of the conductive layer UB of the electro-optical device 10B, in which the blue light-emitting layer of the light-emitting layer 46 has the shortest half-life, is thinner than the thicknesses tG and tR of the conductive layers UG and UR of the other electro-optical devices 10G and 10R. However, the thickness tG of the conductive layer UG of the electro-optical device 10G, in which the green light-emitting layer of the light-emitting layer 46 has a shorter half-life than the red light-emitting layer, is thicker than the thickness tR of the conductive layer UR of the electro-optical device 10R. As a result, the difference in brightness between the image lights LR, LG, and LB increases, further degrading the color balance. For example, after 300 hours have passed since initial operation, the brightness of the white light obtained by combining the image lights LR, LG, and LB decreases compared to the other numerical examples, and Δu'v' reaches 0.02 or more, which is greater than the other numerical examples. Therefore, there is a risk that the observer will notice a noticeable color shift.

[0082] Next, we will briefly describe an example of a method for manufacturing the main parts of the pixel circuit of the electro-optical device 10R illustrated in FIG. 5. Although not shown, as shown in FIG. 4, the conductive material of the first conductive layer 151, the conductive material of the second conductive layer 152, and the conductive material of the conductive layer UR are laminated to a predetermined thickness on the surface of the insulating layer 60, which is flattened parallel to the XY plane of the pixel region 12R. Next, for example, of the laminate of the conductive materials of the first conductive layer 151, the second conductive layer 152, and the conductive layer UR, the laminate is left in the region where the pixels 11R are formed in a planar view, and the laminate outside the region where the pixels 11R are formed is removed, thereby exposing the surface of the insulating layer 60 again. Furthermore, the peripheral portion of the layer made of the conductive material of the conductive layer UR in a planar view is removed, and a conductive layer UR smaller than the first electrode E1 in a planar view is formed on the surface of the second conductive layer 152 of the first electrode E1.

[0083] Next, an insulating material of the first insulating layer 161 of the insulating layer 65 is formed so as to cover the side surfaces and surfaces of the peripheral edges of the second conductive layer 152 in plan view, the surface of the conductive layer UR, and the exposed surface of the insulating layer 60 at the edges in plan view. The insulating material of the first insulating layer 161 is then recessed downward, i.e., rearward in the Z direction, so that the surface of the insulating material is lower than the surface of the second conductive layer 152 of the first electrode E1. At this point, the upper portion of the second conductive layer 152 in the Z direction and its edges in plan view, i.e., the peripheral edges, and the conductive layer UR are exposed. Next, a second insulating layer 162 of the insulating layer 65 is formed so as to cover the surface of the first insulating layer 161, the exposed surface and upper portions of the side surfaces of the second conductive layer 152, and the surface of the conductive layer UR. Then, openings 200 having a width AR in plan view are formed in each of the second conductive layers 152 in regions corresponding to the plurality of pixels 11R, exposing the surface of the conductive layer UR at the bottom of the openings 200.

[0084] Next, the materials for the hole injection layer, hole transport layer, red light-emitting layer, hole blocking layer, electron transport layer, and electron injection layer that make up the light-emitting layer 46 are sequentially stacked to cover the surface of the second conductive layer 152 and the exposed surface of the conductive layer UR, thereby forming the light-emitting layer 46. Thereafter, the conductive material for the second electrode E2 is provided on the surface of the light-emitting layer 46 to form the second electrode E2. By performing the above steps, the main portion of the pixel region 12R of the pixel circuit of the electro-optical device 10R shown in FIG. 5 can be manufactured. Note that the above-described manufacturing method is merely an example, and the manufacturing method for the main portion of the pixel region 12R of the pixel circuit of the electro-optical device 10R shown in FIG. 5 is not necessarily limited to the above-described method.

[0085] 5 in each of the electro-optical devices 10G and 10B is similar to the method for manufacturing the main part of the pixel region 12R of the pixel circuit of the electro-optical device 10R. However, in the method for manufacturing the main part of the pixel region 12G and 12B of the pixel circuit of each of the electro-optical devices 10G and 10B, when forming the conductive layers UG and UB instead of the conductive layer UR, the thickness of the conductive material constituting the conductive layers UG and UB is adjusted so that the relationship between the thicknesses tR, tG, and tB described above is satisfied, i.e., so that the thickness tB is thinner than both the thicknesses tG and tR.

[0086] 6 is a schematic diagram showing the configuration of a head-mounted display 1000, which is a virtual image display device including the light modulation device 1 of the first embodiment. The head-mounted display 1000 is configured as a see-through eyeglass display, and has a frame 1110 with temples 1111 and 1112 on the left and right. The virtual image display unit 1010 is supported by the frame 1110, and causes a user (not shown) to recognize an image projected from the virtual image display unit 1010 as a virtual image.

[0087] The head-mounted display 1000 includes a virtual image display unit 1010, which includes a left-eye display unit 1101 and a right-eye display unit 1102. The left-eye display unit 1101 and the right-eye display unit 1102 have the same configuration and are arranged symmetrically. FIG. 7 is a perspective view showing the configuration of the optical system of the virtual image display unit 1010. FIG. 8 is a schematic diagram showing the optical path of the optical system shown in FIG. 7, as viewed from a direction perpendicular to the surface of the light guide unit 1050. As shown in FIGS. 7 and 8, the left-eye display unit 1101 includes the above-described light modulation device 1 and a light guide system 1030 that guides the composite image light LW emitted from the light modulation device 1 to the emission unit 1058. A projection lens system 1070 is arranged between the light modulation device 1 and the light guide system 1030. The composite image light LW emitted from the light modulation device 1 is incident on the light guide system 1030 via the projection lens system 1070. The projection lens system 1070 is composed of one collimating lens with positive power.

[0088] The light guide system 1030 includes a light-transmitting incident section 1040 onto which the composite image light LW is incident, and a light-transmitting light guide section 1050 having one end 1051 connected to the incident section 1040. The incident section 1040 and the light guide section 1050 are formed of an integral light-transmitting member.

[0089] Although no reflective coating is formed on the incident surface 1041, the incident surface 1041 has optical transparency and optical reflectivity, and totally reflects light incident at an incident angle equal to or greater than the critical angle. The reflecting surface 1042 faces the incident surface 1041. One end 1422 of the reflecting surface 1042 is farther from the incident surface 1041 than the other end 1421 of the reflecting surface 1042. In other words, the incident portion 1040 has a substantially triangular shape. The reflecting surface 1042 includes a flat surface, an aspherical surface, or a free-form surface. The reflecting surface 1042 is formed of a reflective metal layer whose main component is, for example, Al, Ag, Mg, or Cr.

[0090] The light guide unit 1050 includes a first surface 1056 extending from one end 1051 to the other end 1052, a second surface 1057 extending from the end 1051 to the end 1052, and a light exit unit 1058 provided on a portion of the second surface 1057 spaced apart from the incident unit 1040. The first surface 1056 and the reflecting surface 1042 of the incident unit 1040 are continuous via an inclined surface 1043. The distance between the first surface 1056 and the second surface 1057 is smaller than the thickness of the incident unit 1040. The first surface 1056 and the second surface 1057 totally reflect light incident at an incident angle equal to or greater than the critical angle based on the difference in refractive index between the light guide unit 1050 and the external air. Therefore, no reflective film is formed on the first surface 1056 or the second surface 1057.

[0091] The exit section 1058 is formed on a portion of the light-guiding section 1050 on the second surface 1057 side in the thickness direction. In the exit section 1058, multiple partially reflective surfaces 1055 are arranged parallel to one another and inclined relative to a direction perpendicular to the second surface 1057. The exit section 1058 is a portion of the second surface 1057 that overlaps with the multiple partially reflective surfaces 1055 and has a predetermined width in the extension direction of the light-guiding section 1050. Each of the multiple partially reflective surfaces 1055 is formed of a dielectric multilayer film. At least one of the multiple partially reflective surfaces 1055 may be a composite layer made of a dielectric multilayer film and a reflective metal layer containing one or more of Al, Ag, Mg, and Cr as a main component. Including a metal layer in the partially reflective surface 1055 can enhance the reflectivity of the partially reflective surface 1055 or optimize the incidence angle dependence and polarization dependence of the transmittance and reflectance of the partially reflective surface 1055. The emission section 1058 may be provided with an optical element including a diffraction grating or a hologram.

[0092] In the head mounted display 1000 having the above-described configuration, the composite image light LW, which is made up of parallel light incident from the incident unit 1040, is refracted at the incident surface 1041 and propagates toward the reflecting surface 1042. The composite image light LW is reflected at the reflecting surface 1042 and propagates toward the incident surface 1041 again. At this time, since the composite image light LW is incident on the incident surface 1041 at an incident angle equal to or greater than the critical angle, the composite image light LW is reflected by the incident surface 1041 toward the light guiding unit 1050 and propagates toward the light guiding unit 1050. Note that in the incident unit 1040, the incident surface 1041 and the reflecting surface 1042 may be formed by free-form surfaces, and the composite image light LW, which is non-parallel light, may be converted into parallel light while reflecting between the reflecting surface 1042 and the incident surface 1041 after incident on the incident surface 1041.

[0093] In the light guiding unit 1050, the composite image light LW is reflected between the first surface 1056 and the second surface 1057 and travels. A portion of the composite image light LW incident on the partially reflecting surface 1055 is reflected by the partially reflecting surface 1055 and emitted from the emission portion 1058 toward the viewer's eye E. At least a portion of the remaining composite image light LW incident on the partially reflecting surface 1055 passes through the partially reflecting surface 1055 and is incident on the adjacent next partially reflecting surface 1055. Therefore, the composite image light LW reflected on each of the multiple partially reflecting surfaces 1055 is emitted from the emission portion 1058 toward the viewer's eye E. This allows the viewer to recognize a virtual image. At this time, light incident on the light guiding unit 1050 from the outside world enters the light guiding unit 1050, passes through the partially reflecting surface 1055, and reaches the viewer's eye E. Therefore, the viewer can view the color image emitted from the light modulation device 1 and can view the outside world in a so-called see-through manner.

[0094] The light modulation device 1 of the first embodiment described above includes an electro-optical device (first electro-optical device) 10R, an electro-optical device (second electro-optical device) 10G, an electro-optical device (third electro-optical device) 10B, and a dichroic prism (prism) 20. The electro-optical device 10R has a light-emitting element (first light-emitting element) 15 including a light-emitting layer 46 that emits red light (light) including a red wavelength range. The electro-optical device 10G has a light-emitting element (second light-emitting element) 15 including a light-emitting layer 46 that emits green light (light) including a green wavelength range. The electro-optical device 10B has a light-emitting element (third light-emitting element) 15 including a light-emitting layer 46 that emits blue light (light) including a blue wavelength range. The dichroic prism 20 combines the image lights (light) LR, LG, and LB emitted from the electro-optical device 10R, the electro-optical device 10G, and the electro-optical device 10B. The light-emitting element 15 of each of the electro-optical devices 10R, 10G, and 10B includes a first electrode E1 acting as an anode, a second electrode E2 acting as a cathode, and conductive layers UR, UG, and UB. The conductive layers UR, UG, and UB are provided between the first electrode E1 and the light-emitting layer 46 and have lower reflectance than the first electrode E1 for the color light (light) corresponding to one of the electro-optical devices 10R, 10G, and 10B among red light, green light, and blue light emitted from the light-emitting layer 46. In the light modulation device 1 of the first embodiment, the thickness tB of the conductive layer UB of the electro-optical device 10B is thinner than the thickness tR of the conductive layer UR of the electro-optical device 10R and the thickness tG of the conductive layer UG of the electro-optical device 10G.

[0095] In the light modulation device 1 of the first embodiment, the thickness tB of the conductive layer UB of the electro-optical device 10B, which includes a blue light-emitting layer 46 that is thought to have a shorter lifespan and a faster degradation rate than the red and green light-emitting layers 46, is changed relative to the thicknesses tG and tR of the conductive layers UG and UR of the other electro-optical devices 10G and 10R, and the thickness tB is thinner than the thicknesses tG and tR. According to the light modulation device 1 of the first embodiment, even after a certain period of time has passed since the start of operation, the luminance of the image light LG and LR emitted from each of the electro-optical devices 10G and 10R is matched to the luminance of the image light LB emitted from the electro-optical device 10B, which has the poorest lifespan and degradation rate, thereby suppressing color shift of the combined image light LW, i.e., white light, obtained by combining the image light LR, LG, and LB. This allows the quality of the light modulation device 1 to be maintained at a high level.

[0096] In order to reduce color shifts between composite image light and white light in an optical modulation device, methods for adjusting the luminous efficiency of the light-emitting layer 46 of the light-emitting element 15 include, for example, changing the material of the light-emitting layer 46 or the electron transport layer, or changing the conditions for adjusting the material of the light-emitting layer 46 or the electron transport layer. However, these methods are extremely difficult to fine-tune from the countless organic materials available or to fine-tune the conditions, making it difficult to achieve the expected luminous efficiency. According to the optical modulation device 1 of the first embodiment, the luminance of the image lights LR, LG, and LB emitted from each of the electro-optical devices 10R, 10G, and 10B, which have different luminous efficiencies depending on their lifetime characteristics and the elapsed time after starting operation, can be optically adjusted. Therefore, the luminance of the image lights LR, LG, and LB can be easily and accurately calculated based on the physical properties, including the refractive index and extinction coefficient, of the materials of each component of the pixel circuit, as illustrated in the above-mentioned Numerical Examples 1 to 7.

[0097] Al and Ag, which can be used for the first electrode E1 of the electro-optical devices 10R, 10G, and 10B, are metals with high reflectivity. Providing conductive layers UR, UG, and UR, which can function as barrier layers, on the surface of the first electrode E1 reduces the reflectivity of the colored light emitted from the light-emitting layer 46 of the first electrode E1. However, the amount of colored light reflected from the stack of the first electrode E1 and any of the conductive layers UR, UG, and UB correlates with the thicknesses tR, tG, and tB of the conductive layers UR, UG, and UB, respectively, and decreases as the thicknesses tR, tG, and tB increase. According to the light modulation device 1 of the first embodiment, the thicknesses tR, tG, and tB are adjusted according to the life characteristics, degradation rate, e.g., half-life time of brightness, of the light-emitting layer 46 of the electro-optical devices 10R, 10G, and 10R. By adjusting the thicknesses tR, tG, and tB in order of the fastest degradation rate and shortest half-life time, color shift of the composite image light LW, i.e., white light, can be suppressed.

[0098] In the optical modulation device 1 of the first embodiment, each of the electro-optical devices 10R, 10G, and 10B has a layered structure along the Z direction as described above, and constitutes a so-called top-emission element, so that color light emitted from the light-emitting layer 46 is repeatedly reflected between the first electrode E1 and the second electrode E2. Therefore, color light with high color purity can be efficiently extracted from each of the electro-optical devices 10R, 10G, and 10B.

[0099] Furthermore, in the optical modulation device 1 of the first embodiment, the thickness tR of the conductive layer UR of the light-emitting element 15 of the electro-optical device 10R is equal to or greater than the thickness tG of the conductive layer UG of the light-emitting element 15 of the electro-optical device 10G. Furthermore, the thickness tG of the conductive layer UG of the light-emitting element 15 of the electro-optical device 10G is greater than the thickness tB of the conductive layer UB of the light-emitting element 15 of the electro-optical device 10B. In the optical modulation device 1 of the first embodiment, the thickness tG of the conductive layer UG of the electro-optical device 10G, which includes a green light-emitting layer 46 that is thought to have a shorter lifespan and a faster degradation rate than the red light-emitting layer 46, is changed relative to the thickness tR of the conductive layer UR of the electro-optical device 10R, and the thickness tG is thinner than the thickness tR. According to the light modulation device 1 of the first embodiment, even after a certain time has passed since the start of operation, the luminance of the image light LR emitted from the electro-optical device 10R can be matched to the luminance of the image light LG emitted from the electro-optical device 10G, which is inferior to the electro-optical device 10R in the life characteristics and degradation rate of the light-emitting layer 46, and as a result, color shift of the combined image light LW, i.e., white light, obtained by combining the image lights LR, LG, and LB can be further suppressed. This makes it possible to maintain high quality of the light modulation device 1.

[0100] Furthermore, in the optical modulation device 1 of the first embodiment, each of the electro-optical devices 10R, 10G, and 10B has an insulating layer 65 between the first electrode E1 and the light-emitting layer 46. In the electro-optical device 10R, the insulating layer 65 is provided so as to cover the end E1e of the first electrode E1 in a planar view and the end URe of the conductive layer UR in a planar view. In each of the electro-optical devices 10G and 10B, the insulating layer 65 can be disposed over the first electrode E1 and the conductive layers UG and UB, as in the electro-optical device 10R. According to the optical modulation device 1 of the first embodiment, the end E1e of the first electrode E1 and the end URe of the conductive layer UR are covered by the insulating layer 65 in a planar view, so that colored light from the light-emitting layer 46 can be reliably irradiated onto the first electrode E1 and the conductive layer UR within the opening 200. According to the optical modulation device 1 of the first embodiment, the colored light reflected by the first electrode E1 can be efficiently emitted from the opening 200, and as a result, colored light having a desired brightness distribution according to the width AR, area, and shape of the opening 200 can be extracted from each of the electro-optical devices 10R, 10G, and 10B.

[0101] In the light modulation device 1 of the first embodiment, the areas of the openings 200 formed by the insulating layers 65 of the electro-optical devices 10R, 10G, and 10B are equal to each other. In the light modulation device 1 of the first embodiment, the pixels 11B of the electro-optical device 10B face the incident surface 21 of the dichroic prism 20, the pixels 11G of the electro-optical device 10G face the incident surface 22 of the dichroic prism 20, and the pixels 11R of the electro-optical device 10R face the incident surface 23 of the dichroic prism 20. Image light LR, LG, and LB, consisting of red light, green light, and blue light emitted from the pixels 11R, 11G, and 11B, respectively, are combined together by a first dichroic mirror 25 and a second dichroic mirror 26. Therefore, it is important that the three electro-optical devices 10R, 10G, and 10B are arranged without misalignment with each other relative to the incident surfaces 23, 22, and 21 in order to combine the image lights LR, LG, and LB. In particular, as the pixels 11R, 11G, and 11B become smaller, the accuracy required for aligning the electro-optical devices 10R, 10G, and 10B with the incident surfaces 23, 22, and 21 increases. According to the light modulation device 1 of the first embodiment, the sizes of the pixels 11R, 11G, and 11B, which are determined according to the areas of the openings 200 of the electro-optical devices 10R, 10G, and 10B, are uniform. This makes it possible to easily align the electro-optical devices 10R, 10G, and 10B with the incident surfaces 23, 22, and 21, and generate combined image light LW with little color bleeding.

[0102] When the pixels 11R, 11G, and 11B of the electro-optical devices 10R, 10G, and 10B are equal in size, as in the light modulation device 1 of the first embodiment, a method is known in which the life characteristics of the light-emitting layers 46 of each of the electro-optical devices 10R, 10G, and 10B are controlled by modulating the duty ratio of the electrical signal supplied to the pixel circuit, i.e., the ratio between the on time and the off time. However, if the duty ratio is deviated from a predetermined value, flicker or image flicker due to image lights LR, LG, and LB may occur. Furthermore, if it becomes necessary to supply electrical signals with different duty ratios to the electro-optical devices 10R, 10G, and 10B individually, the configuration and operation of the control devices for the electro-optical devices 10R, 10G, and 10B become complicated. According to the optical modulation device 1 of the first embodiment, the duty ratios of the electrical signals supplied to the pixel circuits of the electro-optical devices 10R, 10G, and 10B can be set to be the same, thereby simplifying the configuration and operation of the control devices for the electro-optical devices 10R, 10G, and 10B.

[0103] Furthermore, in the optical modulation device 1 of the first embodiment, the thickness of each of the conductive layers UR, UG, and UB is 0.5 nm or more and 20 nm or less. According to the optical modulation device 1 of the first embodiment, the brightness of the colored light reflected from the first electrode E1 can be appropriately suppressed according to the element life of the light-emitting layer 46, as described above, and the power consumption of the electro-optical devices 10R, 10G, and 10B does not increase excessively.

[0104] Furthermore, in the optical modulation device 1 of the first embodiment, the conductive layers UR, UG, and UB are made of at least one of Ti-containing nitrides, Mo, Cr, and Ni. Generally, Al, Ag, or alloys of these metals, which are low-cost and highly corrosion-resistant, are used as the material for the first electrode E1. However, when Al, Ag, or alloys of these metals are exposed to the atmosphere, a natural oxide film forms on the surface, resulting in high surface contact resistance. High surface contact resistance of the first electrode E1 prevents electrons from being injected from the first electrode E1 into the hole injection layer of the light-emitting layer 46. According to the optical modulation device 1 of the first embodiment, the conductive layers UR, UG, and UB are formed on at least the portion of the first electrode E1 that is irradiated with colored light, i.e., the surface of the first electrode E1 within the range of the opening 200 in a plan view, without exposing the first electrode E1 to the atmosphere after formation. This prevents an increase in contact resistance of the first electrode E1 that is irradiated with colored light. As a result, the injection and transport of holes in the light-emitting layers 46 of the electro-optical devices 10R, 10G, and 10B can be smoothly promoted, and the quality of the optical modulation device 1 can be maintained at a high level.

[0105] 5, the first electrode E1 may not have a two-layer structure made up of the first conductive layer 151 and the second conductive layer 152, but may be made up of a single conductive layer. Similarly, the insulating layer 65 may not have a two-layer structure made up of the first insulating layer 161 and the second insulating layer 162, but may be made up of a single insulating layer.

[0106] Furthermore, for example, in the configuration of the main parts of the pixel circuits of each of the electro-optical devices 10R, 10G, and 10B illustrated in FIG. 5, the conductive layers UR, UG, and UB may have the same size and shape in a plan view as the first electrode E1.

[0107] The head mounted display (display device) 1000 of the first embodiment includes the above-described light modulation device 1, and a projection lens system (optical system) 1070 and a light guide system (optical system) 1030 for displaying the composite image light (light) LW emitted from the light modulation device 1. The head mounted display 1000 of the first embodiment can suppress color shift of the image of the object to be observed even after a time has passed since the start of driving, thereby maintaining high quality.

[0108] [Second embodiment] Next, a second embodiment of the present invention will be described with reference to FIG. In the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and a description thereof will be omitted. In the second embodiment, the components and contents different from those in the first embodiment will be mainly described. In addition, the light modulation device and the display device of the second embodiment are obtained by replacing the electro-optical devices 10G, 10B, and 10R in the light modulation device 1 and the head-mounted display 1000 described in the first embodiment with the electro-optical devices described below.

[0109] The pixel circuit of the pixel 11R of the electro-optical device 10R of the second embodiment has a configuration similar to that of the pixel circuit of the pixel 11R of the first embodiment. Figure 9 is an enlarged view of a portion of the pixel circuit of the pixel 11R of the electro-optical device 10R of the second embodiment, and corresponds to the enlarged view of the region R100 shown in Figure 4.

[0110] 9 , in the pixel circuit of a pixel 11G of an electro-optical device 10G of the second embodiment, the conductive layer UR is formed, in a plan view, to be smaller than the width AR and area of ​​the opening 200 partitioned for each pixel 11R by the second insulating layer 162 of the insulating layer 65. Specifically, the second insulating layer 162 of the insulating layer 65 is provided on the surface of the first insulating layer 161 and on the side surfaces and surface of the end of the second conductive layer 152 of the first electrode E1 in a plan view. That is, in a plan view, the end of the first electrode E1, i.e., the peripheral portion, is covered with the second insulating layer 162 of the insulating layer 65. However, unlike the first embodiment, the conductive layer UR is not covered with the second insulating layer 162 of the insulating layer 65 in a plan view.

[0111] The thickness of the second insulating layer 162 of the insulating layer 65 is constant in the XY plane including the X and Y directions. The height of the second insulating layer 162, i.e., the position of the surface of the second insulating layer 162 in the Z direction, changes in two stages: from a height elevated by a constant thickness of the second insulating layer 162 above the surface of the first insulating layer 161 to a height elevated by a constant thickness of the second insulating layer 162 above the surface of the second conductive layer 152. In plan view, an opening 200 is formed by the spacing between the second insulating layers 162, but there is a gap between the periphery of the second insulating layer 162 of the insulating layer 65 and the periphery of the conductive layer UR. In the pixel circuit of the pixel 11G of the electro-optical device 10G of the second embodiment, a light-emitting layer 46 is interposed between the periphery of the second insulating layer 162 and the periphery of the conductive layer UR in plan view.

[0112] The light emitting layer 46 is provided on the surface of the second insulating layer 162 of the insulating layer 65, on the surface of the conductive layer UR exposed in the opening 200, and between the insulating layer 65 and the conductive layer UR.

[0113] The manufacturing method of the electro-optical device 10R of the second embodiment is generally similar to the manufacturing method of the electro-optical device 10R of the first embodiment. However, when forming the opening 200, the conductive layer UR is exposed in the opening 200, not at the bottom of the opening 200, and a part of the surface of the second conductive layer 152 is exposed at the bottom of the opening 200. In other words, the width AR of the opening 200 is set larger than the width of the conductive layer UR in the XY plane.

[0114] Next, the materials for the hole injection layer, hole transport layer, red light-emitting layer, hole blocking layer, electron transport layer, and electron injection layer that make up the light-emitting layer 46 are sequentially stacked to cover the exposed surface of the second conductive layer 152 and the surfaces and side surfaces of the conductive layer UR, thereby forming the light-emitting layer 46. Thereafter, the conductive material for the second electrode E2 is provided on the surface of the light-emitting layer 46 to form the second electrode E2. By going through the above steps, the main portion of the pixel region 12R of the pixel circuit of the electro-optical device 10R shown in FIG. 9 can be manufactured.

[0115] The above-described manufacturing method is merely an example, and a manufacturing method for the main portion of the pixel region 12R of the pixel circuit of the electro-optical device 10R of the second embodiment shown in FIG. 9 is not necessarily limited to the above-described method. For example, in the second embodiment, first, the first electrodes E1 for each of the plurality of pixels 11R may be formed on the surface of the insulating layer 60 in the same manner as in the above-described manufacturing method, and then the insulating material of the first insulating layer 161 may be formed on the surface of the insulating layer 60 and the surface of the second conductive layer 152. Then, the first insulating layer 161 may be recessed in the same manner as in the above-described manufacturing method, and the insulating material of the second insulating layer 162 may be formed on the surface of the first insulating layer 161 and the surface and upper side of the exposed second conductive layer 152, thereby forming the opening 200. Then, a conductive layer UR may be formed in the opening 200, the conductive layer UR being smaller than the opening 200 in a plan view and spaced apart from the edge of the second insulating layer 162 that forms the edge of the opening 200.

[0116] 9 in each of the electro-optical devices 10G, 10B is similar to the method for manufacturing the main parts of the pixel region 12R of the pixel circuit of the electro-optical device 10R of the second embodiment. However, in the method for manufacturing the main parts of the pixel region 12G, 12B of the pixel circuit of each of the electro-optical devices 10G, 10B of the second embodiment, when forming the conductive layers UG, UB instead of the conductive layer UR, the thicknesses of the conductive material constituting the conductive layers UG, UB are adjusted so that the relationship between the thicknesses tR, tG, and tB described above is satisfied, i.e., so that the thickness tB is thinner than both the thicknesses tG and tR.

[0117] The electro-optical device 10G of the second embodiment described above has the same configuration as the electro-optical device 10G of the first embodiment, and therefore provides the same effects as the electro-optical device 10G of the first embodiment.

[0118] Furthermore, in the optical modulation device 1 of the first embodiment, the insulating layer 65 of the electro-optical device 10R is provided so as to cover the end E1e of the first electrode E1 in a planar view and the end URe of the conductive layer UR in a planar view. In contrast, in the second embodiment, the electro-optical device 10R includes a second insulating layer 162 of the insulating layer 65 between the first electrode E1 and the light-emitting layer 46. The second insulating layer 162 of the insulating layer 65 covers the end URe of the first electrode E1 in a planar view and is provided in a different region from the conductive layer UR. That is, in the second embodiment, the peripheral portion of the second insulating layer 162 of the insulating layer 65 and the conductive layer UR are provided on the surface of the second conductive layer 152 of the first electrode E1 and are spaced apart from each other in a planar view. The light-emitting layer 46 is provided between the peripheral portion of the second insulating layer 162 and the conductive layer UR. In each of the electro-optical devices 10G and 10B of the second embodiment, an insulating layer 65 can be disposed on the first electrode E1 and the conductive layers UG and UB in the same manner as in the electro-optical device 10R of the second embodiment.

[0119] In the optical modulation device 1 of the second embodiment, if the size of the opening 200 of each of the electro-optical devices 10R, 10G, and 10B is equivalent to that of the electro-optical devices 10R, 10G, and 10B of the optical modulation device 1 of the first embodiment, the size of the conductive layers UR, UG, and UB of each pixel 11R, 11G, and 11B is smaller than that of the conductive layers UR, UG, and UB of the first embodiment. In this configuration, the surface height of the conductive layers UR, UG, and UB, i.e., the change in position in the Z direction, is two-stage, which is smaller than the three-stage change in the first embodiment. According to the optical modulation device 1 of the second embodiment, the step of the conductive layers UR, UG, and UB is reduced, thereby suppressing the occurrence of abnormal light emission due to the step. Furthermore, according to the optical modulation device 1 of the second embodiment, the resistance of the center portion of the first electrode E1 overlapping with each of the conductive layers UR, UG, and UB can be lower than that of the end portion different from each of the conductive layers UR, UG, and UB, for example, the end portion URe, in a plan view. This suppresses the occurrence of abnormal light emission in the peripheral portions of the pixels 11R, 11G, and 11B.

[0120] Although not shown, a head-mounted display (display device) 1000 equipped with the light modulation device 1 of the second embodiment instead of the light modulation device 1 of the first embodiment can suppress color shift in the image of the object being observed even after a period of time has passed since the start of operation, and can also suppress the occurrence of abnormal light emission in the peripheral areas of pixels 11R, 11G, and 11B, thereby maintaining high quality.

[0121] Although the preferred embodiments of the present invention have been described in detail above, the present invention is not limited to the specific embodiments, and various modifications and variations are possible within the scope of the gist of the present invention as set forth in the claims. Although notable effects have been described for each of the above-described embodiments, the effects of other embodiments to which the configurations of the light modulation device and display device are applicable can be obtained even if not described in detail.

[0122] Although a head-mounted display has been described as a display device equipped with the light modulation device according to the present invention, the display device according to the present invention is not limited to a head-mounted display and may be, for example, a projector. Furthermore, by combining the light modulation device according to the present invention with an optical system using a light guide plate, a half mirror, or a hologram, a wide variety of virtual image display devices can be configured.

[0123] Fig. 10 is a schematic diagram showing the configuration of a projector 2000 including the above-described light modulation device 1. For example, as shown in Fig. 10, the projector 2000 includes the light modulation device 1 and a projection optical system (optical system) 2100 that enlarges and projects the composite image light LW emitted from the light modulation device 1 onto a screen 2200. The projector 2000 optimizes the white balance of the composite image light LW projected onto the screen 2200, and can reduce the power consumption of each of the electro-optical devices 10G and 10B compared to the electro-optical device 10R.

[0124] The optical modulation device according to the aspect of the present invention may have the following configuration. An optical modulation device according to one embodiment of the present invention includes a first electro-optical device having a first light-emitting element including a light-emitting layer that emits light including a red wavelength range, a second electro-optical device having a second light-emitting element including a light-emitting layer that emits light including a green wavelength range, a third electro-optical device having a third light-emitting element including a light-emitting layer that emits light including a blue wavelength range, and a prism that combines the light emitted from the first electro-optical device, the second electro-optical device, and the third electro-optical device. Each of the first light-emitting element, the second light-emitting element, and the third light-emitting element has a first electrode, a second electrode, and a conductive layer that is provided between the first electrode and the light-emitting layer and has a lower reflectivity for light emitted from the light-emitting layer than the first electrode, and the thickness of the conductive layer of the third light-emitting element is thinner than the thickness of the conductive layer of the first light-emitting element and the thickness of the conductive layer of the second light-emitting element.

[0125] In one embodiment of the optical modulation device of the present invention, the thickness of the conductive layer of the first light-emitting element may be greater than or equal to the thickness of the conductive layer of the second light-emitting element, and the thickness of the conductive layer of the second light-emitting element may be greater than the thickness of the conductive layer of the third light-emitting element.

[0126] In one embodiment of the optical modulation device of the present invention, each of the first electro-optical device, the second electro-optical device, and the third electro-optical device may have an insulating layer between the first electrode and the light-emitting layer, and the insulating layer may be arranged to cover the end of the first electrode and the end of the conductive layer.

[0127] In one embodiment of the optical modulation device of the present invention, each of the first electro-optical device, the second electro-optical device, and the third electro-optical device has an insulating layer between the first electrode and the light-emitting layer, and the insulating layer may cover the end of the first electrode in a planar view and be located in a region different from the conductive layer.

[0128] In the optical modulation device according to one aspect of the present invention, a light emitting layer may be provided between the conductive layer and the insulating layer.

[0129] In the optical modulation device according to one aspect of the present invention, the conductive layer may have a thickness of 0.5 nm or more and 20 nm or less.

[0130] In the optical modulation device according to one aspect of the present invention, the material forming the conductive layer may include at least one of nitrides containing Ti, Mo, Cr, and Ni.

[0131] A display device according to one aspect of the present invention may have the following configuration. A display device according to one aspect of the present invention includes the above-described light modulation device and an optical system that displays light emitted from the light modulation device. [Explanation of symbols]

[0132] 10B... electro-optical device (third electro-optical device), 10G... electro-optical device (second electro-optical device), 10R... electro-optical device (first electro-optical device), 15... light-emitting element, 46... light-emitting layer, 65... insulating layer, 1000... head-mounted display (display device), 2000... projector (display device), E1... first electrode, E2... second electrode, UB, UG, UR... conductive layers

Claims

1. a first electro-optical device having a first light-emitting element including a light-emitting layer that emits light including a red wavelength range; a second electro-optical device having a second light-emitting element including a light-emitting layer that emits light including a green wavelength range; a third electro-optical device having a third light-emitting element including a light-emitting layer that emits light including a blue wavelength range; a prism that combines the light emitted from the first electro-optical device, the second electro-optical device, and the third electro-optical device; Equipped with Each of the first light-emitting element, the second light-emitting element, and the third light-emitting element is A first electrode; A second electrode; a conductive layer provided between the first electrode and the light-emitting layer, the conductive layer having a lower reflectivity than the first electrode with respect to the light emitted from the light-emitting layer; and a thickness of the conductive layer of the third light-emitting element is thinner than a thickness of the conductive layer of the first light-emitting element and a thickness of the conductive layer of the second light-emitting element; Light modulation device.

2. a thickness of the conductive layer of the first light-emitting element is equal to or greater than a thickness of the conductive layer of the second light-emitting element; The thickness of the conductive layer of the second light-emitting element is greater than the thickness of the conductive layer of the third light-emitting element. The optical modulation device according to claim 1 .

3. each of the first electro-optical device, the second electro-optical device, and the third electro-optical device has an insulating layer between the first electrode and the light-emitting layer; the insulating layer is provided so as to cover an end of the first electrode and an end of the conductive layer; 3. The optical modulation device according to claim 1 or 2.

4. each of the first electro-optical device, the second electro-optical device, and the third electro-optical device has an insulating layer between the first electrode and the light-emitting layer; the insulating layer covers an end of the first electrode in a plan view and is provided in a region different from the conductive layer.

3. The optical modulation device according to claim 1 or 2.

5. the light-emitting layer is provided between the conductive layer and the insulating layer; The optical modulation device according to claim 4 .

6. the areas of the openings formed by the insulating layers of the first electro-optical device, the second electro-optical device, and the third electro-optical device are equal to each other; The optical modulation device according to claim 3 .

7. The thickness of the conductive layer is 0.5 nm or more and 20 nm or less. The optical modulation device according to claim 1 .

8. the material constituting the conductive layer includes at least one of a nitride containing Ti, Mo, Cr, or Ni; The optical modulation device according to claim 1 .

9. An optical modulation device according to any one of claims 1 to 8; an optical system that displays the light emitted from the light modulation device; Equipped with Display device.

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