Multi-beam pattern definition device

Abstract

To reduce lateral beamlet displacement at a rim portion of an aperture array device.SOLUTION: The invention proposes a multi-beam pattern definition device for use in a particle-beam processing or inspection apparatus, the device being adapted to be irradiated with a beam of charged particles and allow passage of the beam through a plurality of apertures thus forming a corresponding number of beamlets. The device comprises an aperture array device in which at least two sets of apertures are realized, and a hole array device located downstream of the aperture array device and having a plurality of holes configured for the passage of the beamlets, where the hole array device comprises impact regions such that the charged particles impinge on the impact regions, where the holes are arranged substantially regularly. The aperture array device comprises a plurality of additional apertures allowing passage of the charged particles to form additional beamlets. The hole array device comprises additional impact regions at locations corresponding to the additional apertures of the aperture array device such that the charged particles passing through the additional apertures impinge on the additional impact regions.SELECTED DRAWING: Figure 12

Description

Technical Field

[0001] This application claims the benefit of priority under the Paris Convention for European Patent Application No. 22171589.9, filed on May 4, 2022, the entire disclosure of which is incorporated herein by reference.

[0002] The present invention relates to a multi-beam pattern defining device for use in a particle beam processing or inspection apparatus. The device is irradiated by a beam of charged particles, particularly electrons, and is adapted to pass the beam through a plurality of apertures, thereby forming a corresponding number of beamlets. The device comprises several components including an aperture array device in which the above-mentioned apertures are defined to form a corresponding number of beamlets.

Background Art

[0003] Pattern defining devices of the above type (hereinafter referred to as "PD (Pattern Definition) devices") and charged particle multi-beam processing devices incorporating such PD devices are described in the applicant's U.S. Pat. Nos. 6,768,125, 8,546,767 and 9,269,543. The teachings of these documents are incorporated herein by reference and form part of the disclosure of the present application.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0005] The aforementioned documents describe charged particle lithography, processing methods, and apparatus referred to as PML2 ("Projection Mask-Less Lithography"). Several documents by the applicant describe a processing apparatus referred to as eMET ("electron multi-beam Mask Exposure Tool"). These apparatuses realize the multi-beam lithography concept. Furthermore, a programmable aperture plate system (APS) is used as a PD apparatus for structuring the particle beam extracted from a single source of charged particles.

[0006] Typically, a PD (photodiode) system includes an aperture array system, a hole array system, and a deflection array system. According to US 8,546,767, a “multiple multi-beam array” may be provided, which includes multiple arrays of apertures. This is because an aperture array device (AAD) includes at least two sets of apertures, each set containing multiple apertures arranged in a (substantially) regular arrangement on the AAD. The arrangements of these two or more sets are at least partially interlaced, and the apertures of different sets are offset from each other by a displacement that (substantially) corresponds to a common displacement vector, at least in the region where the arrays are interlaced. Correspondingly, and as a means of selecting one set from multiple sets of apertures, the hole array device includes multiple holes, which are configured to correspond to the paths of at least one subset of beamlets formed by the apertures of the AAD. The hole array device includes multiple holes, at least in the region corresponding to the region where the arrays are interlaced. Multiple holes are arranged in a substantially regular pattern. This pattern corresponds to one pattern of aperture sets in the aforementioned region. On the other hand, the hole array device is opaque (impermeable) in locations where holes are absent, corresponding to the apertures of other aperture sets.

[0007] Furthermore, a deflection array device, for example, in the form of a so-called blanking plate, may often exist as an additional, separate component of the PD device. The deflection array device has multiple blanking holes. These blanking holes are arranged so that each beamlet formed in the AAD and fed by the hole array passes through one of the blanking holes along its nominal path. The deflection array device comprises multiple electrostatic deflection electrodes. Each electrostatic deflection electrode is associated with a blanking hole and is configured to deflect the beamlet passing through its respective blanking hole. The amount of deflection is sufficient to deviate the beamlet from its nominal path when a drive voltage is applied to each electrode.

[0008] Furthermore, advantageously, the AAD may be provided with positioning devices capable of positioning it. This is for adjusting the position of the aperture array device relative to the hole array device and the deflection array device. These positioning devices are configured to selectively align one of the sets of apertures of the AAD, i.e., a selected set, with multiple holes in the hole array device and the blanking array device. For example, the apertures, holes, and blanking holes are configured to align at least in the region where the arrays interlace.

[0009] The above structure has proven to be very useful. However, the inventors noted that problems may arise during the use of the PD device under certain circumstances. In a hole array device, a subset of the beamlets is blocked by the material (bulk) of the hole array device (particularly the so-called collision region). The interaction between the beamlets (of charged particles, as mentioned above) and the material (bulk) of the hole array device can often result in the generation of secondary particles, such as electrons. Some of the secondary particles remain within the material, while a certain proportion are emitted from the material. The angular direction of these emission ranges from 0 to 90 degrees in the polar angle range and from 0 to 360 degrees in the azimuthal angle range. Here, the polar angle is the angle between the emission direction and the surface normal of the hole array device, substantially pointing towards the closest part of the AAD from the hole array device. For secondary particles, the angular distribution usually follows a cosine law (with respect to the polar angle), with a maximum at a polar angle of 0 degrees. Such secondary particle emission typically occurs within a few micrometers (for an electron beamlet with an energy of 5 keV) of the area where the beamlet collides with the surface of the hole array device.

[0010] When charged secondary particles (especially electrons) are generated, these secondary particles can deposit and accumulate charge on other parts of the AAD or hole array device, predominantly and intuitively. This charge accumulation is facilitated by locally significant low conductivity at those sites, preventing the charge from flowing or dissipating towards ground.

[0011] The accumulated charge will generate an electric field. This electric field can deflect nearby (primary) beamlets, potentially causing undesirable beamlet displacements on the target surface and consequently reducing pattern fidelity. It may also result in (or occur) locally significant low conductivity due to surface contamination of aperture array or hole array equipment. Such contamination can be caused, for example, by particles, manufacturing process residues, or the decomposition of residual gas molecules (mainly carbon-containing) by primary beamlet particles and subsequent deposition (of carbon-containing solid materials).

[0012] The total lateral dimension of the charged areas in the hole array device and AAD, i.e., the entire charged region, will approximately coincide with the lateral dimension of the array defined by the blocked beamlets.

[0013] The localized beamlet deflection effect described above will be overridden by another deflection effect that enhances the influence on the beamlet.

[0014] Firstly, the electric fields from several charged regions located nearly symmetrically and in close proximity around a particular beamlet are summed into a locally generated electric field with a reduced lateral component. As a result, the lateral deflection is reduced compared to a single charged region.

[0015] Secondly, the electric field across the entire charged region, generated by local charge accumulation, superimposed on the relatively smoothly changing electric field and corresponding potential distribution between the hole array device and the AAD. This is equivalent to the electric field and corresponding potential distribution within a capacitor composed of two parallel plates. The size of these plates corresponds to the entire charged region between the hole array device and the AAD.

[0016] A superimposed electric field extends further than a single, locally charged induced electric field. Therefore, all beamlets that cross through a superimposed electric field interact with the field.

[0017] Between the centers of the entire charged region(s), the superimposed electric field is predominantly in a direction parallel to the surface normals of the hole array device and the AAD.

[0018] All beamlets passing through this central zone will experience a negligible lateral deflection. As a result, positioning errors on the target surface become negligibly small. At the edges of the entire charged region, the superimposed electric field disappears toward the uncharged region, similar to the fringe electric field at the edges of a parallel-plate capacitor. As a result, the lateral electric field component becomes non-negligible, causing lateral deflection of the intersecting beamlets.

[0019] The inventors recognized that unwanted beamlet displacements would occur mainly at the edges of the aperture array and the hole array, i.e., in the transition zone from the region having an aperture and the corresponding hole to the region without an aperture. The displacement of the beamlet is greatest for the outermost beamlets, and this phenomenon disappears as the position of the beamlet approaches the center of the aperture array.

[0020] From the above, an object of the present invention is to improve the layout of the PD device in order to overcome the above problems. In particular, it is to reduce the displacement of the lateral beamlets at the edge of the aperture array device.

Means for Solving the Problems

[0021] This object is solved by the multi-beam pattern defining device according to claim 1. Preferred embodiments are described in the dependent claims.

[0022] According to a first aspect of the present invention, there is provided a multi-beam pattern defining device for use in a particle beam processing or inspection apparatus. The device is adapted to be irradiated with a beam of charged particle(s) and to pass the beam through a plurality of apertures, thereby forming a corresponding number of beamlets. The device comprises an aperture array device and a hole array device. The aperture array device realizes the aperture(s), comprises at least two aperture sets, each aperture set comprising a plurality of apertures arranged in a substantially regular array on the aperture array device, the array(s) of the aperture sets are at least partially interlaced, and the aperture(s) of different aperture sets are offset from each other by a displacement corresponding to a common displacement vector at least in the region where the array(s) are interlaced. The hole array device is located downstream of the aperture array device, having a plurality of holes configured to allow passage of beamlets formed by at least one subset of the opening(s), comprising collision region(s), the collision region(s) being located at positions corresponding to the opening(s) of at least one set of the openings in at least one region corresponding to the region where the array(s) interlace, charged particles passing through the opening(s) of the at least one set of the openings corresponding to the collision region(s) collide with the collision region(s), the plurality of holes of the hole array device are arranged in a substantially regular array corresponding to the array of at least one other set of the opening(s) of the opening array device in the region, the opening array device comprises a plurality of additional openings located outside the region of the interlaced array of the at least two sets of openings, the additional opening(s) being configured to allow charged particle(s) to pass therethrough to form additional beamlet(s), the hole array device comprises additional collision region(s), the additional collision region(s) being located at positions corresponding to the additional opening(s) of the opening array device such that charged particle(s) passing through the additional opening(s) collide with the additional collision region(s), Note that in this application, the term "interlace" refers to a state in which a plurality of lattice arrays have a predetermined displacement between the two lattice arrays without their lattice points coinciding with each other and are combined with each other.

[0023] <Aspect> (Aspect 1) Refer to the first aspect of the present invention above. (Aspect 2) In the device of Aspect 1, the charged particle(s) colliding with the collision region(s) form local charge distribution(s), the charged particle(s) colliding with the additional collision region(s) form additional local charge distribution(s), and it is preferable that the additional opening(s) are configured such that the charge of the additional local charge distribution is substantially equal to the charge of the local charge distribution. (Embodiment 3) In the apparatus of Embodiment 1 or 2, it is preferable that the at least two sets of openings of the opening array apparatus are located in the center of the opening apparatus, and the additional openings are located at the edges of the opening apparatus, and the edges at least partially or completely surround the center. (Embodiment 4) In the apparatus of Embodiment 3, the edge portion preferably surrounds the central portion, and the edge portion preferably extends to at least 10% of the entire surface of the aperture array apparatus. (Form 5) In any of the apparatuses of Forms 1 to 4, the aperture array apparatus and the hole array apparatus are, -The first beamlets(pl) formed by the first set of apertures of the aperture device can pass through the corresponding holes(pl) of the hole array device. - The second beamlets formed by the second set of apertures of the aperture device can collide with the collision regions of the hole array device, and these collision regions correspond to the apertures of the second set of apertures. The charged particles of the second beamlets form local charge distributions in each collision region corresponding to each aperture of the second set of apertures. - The third beamlets formed by the plurality of additional openings of the aperture device can collide with the additional collision regions of the hole array device, and the additional collision regions correspond to the additional openings. The charged particles of the third beamlet(s) form additional local charge distributions(s) in each additional collision region corresponding to each additional aperture(s). It is preferable to arrange them in this manner. (Embodiment 6) In any of the apparatuses of embodiments 1 to 5, it is preferable that the additional openings(s) are further arranged in a substantially regular arrangement on the opening array apparatus. (Embodiment 7) In the apparatus of Embodiment 6, the more substantially regular arrangement is preferably a continuation of one of at least two sets of apertures on the aperture array apparatus, which are at least partially interlaced and substantially regular arrangements. (Embodiment 8) In any of the apparatuses of Embodiments 1 to 7, the size of the additional aperture(s) is preferably such that the additional local charge distribution(s) formed by the additional beamlets(s) that collide with the additional collision regions(s) of the hole apparatus is essentially equal to the local charge distribution formed by the beamlets(s) that collide with the collision regions(s) of the hole apparatus. (Embodiment 9) In any of the apparatuses of Embodiments 1 to 8, it is preferable that the density of additional openings per surface of the aperture array apparatus is essentially equal to the density per surface of one of the at least two sets of openings. (Embodiment 10) In any of the apparatuses of Embodiments 1 to 9, it is preferable that the distance between one opening of the at least two sets of openings and an adjacent additional opening is greater than or equal to the distance between two adjacent openings of one of the at least two sets of openings. (Embodiment 11) In any of the embodiments 1 to 10, the apparatus further comprises a deflection array device having a plurality of blanking holes, wherein the blanking holes are positioned such that each beamlet passes through one of the blanking holes along a nominal path, and the deflection array device comprises a plurality of electrostatic deflection electrodes, each electrostatic deflection electrode associated with a blanking hole, and is configured such that when a driving voltage is applied to each electrode, it deflects the beamlet passing through each blanking hole by a sufficient amount to deviate the beamlet from its nominal path. (Embodiment 12) In any of the embodiments 1 to 11, the apparatus further comprises a positioning array for positioning at least one of the aperture array apparatus and the hole array apparatus in order to adjust the relative position of the aperture array apparatus with respect to the hole array apparatus, wherein the positioning array is preferably configured to selectively align a selected set of the aperture sets of the aperture array apparatus with the plurality of holes of the hole array apparatus, at least in the interlaced region of the array.

[0024] According to a first aspect of the present invention, a multi-beam pattern defining device is provided for use in a particle beam apparatus or inspection apparatus. The device is irradiated with a beam of charged particles and adapted to pass the beam through a plurality of apertures, thereby forming a corresponding number of beamlets. The multi-beam pattern defining device has the features described in the first perspective above.

[0025] This solution reduces the lateral displacement of beamlets at the edges of the aperture array apparatus. In a typical layout, all beamlets formed by the additional apertures are typically located in the edge region, just outside the area where the aperture array interlaces. It is emphasized that these beamlets will be blocked in each of the additional collision regions of the aperture array apparatus.

[0026] Charged particles colliding in collision regions(s) form local charge distributions(s), charged particles colliding in additional collision regions(s) form additional local charge distributions(s), and the additional openings(s) may be configured such that the charge of the additional local charge distributions is substantially equal to the charge of the local charge distributions.

[0027] The at least two sets of openings in the opening array device are located in the center of the opening device, and the additional openings are located at the edges of the opening device, which may at least partially or completely surround the center.

[0028] The edge surrounds the central part, and the edge may extend beyond at least 10% of the total surface area of ​​the aperture array device.

[0029] The aforementioned aperture array device and the aforementioned hole array device are, -The first beamlets(pl) formed by the first set of apertures of the aperture device can pass through the corresponding holes(pl) of the hole array device. - The second beamlets formed by the second set of apertures of the aperture device can collide with the collision regions of the hole array device, and these collision regions correspond to the apertures of the second set of apertures. The charged particles of the second beamlets form local charge distributions in each collision region corresponding to each aperture of the second set of apertures. - The third beamlets formed by the plurality of additional openings of the aperture device can collide with the additional collision regions of the hole array device, and the additional collision regions correspond to the additional openings. The charged particles of the third beamlet(s) form additional local charge distributions(s) in each additional collision region corresponding to each additional aperture(s). They may be arranged in this way.

[0030] The additional openings may be arranged on the opening array device in a further substantially regular arrangement. Preferably, the further substantially regular arrangement may be a continuation of one of at least two partially interlaced, substantially regular arrangements of openings on the opening array device. Typically, this further substantially regular arrangement represents an arrangement of additional openings that can realize a continuation of each arrangement from the center to the edge.

[0031] The size of the additional aperture(s) may be such that the additional local charge distribution(s) formed by the additional beamlets(s) colliding with the additional collision regions(s) of the hole apparatus is essentially equal to the local charge distribution formed by the beamlets(s) colliding with the collision regions(s) of the hole apparatus.

[0032] The density of additional openings per surface of the aperture array device may be essentially equal to the density per surface of one of the at least two sets of openings.

[0033] The distance between one opening in the set of at least two openings and an adjacent additional opening may be greater than or equal to the distance between two adjacent openings in one of the sets of at least two openings.

[0034] The apparatus further comprises a deflection array apparatus having a plurality of blanking holes, the blanking holes(pl) being positioned such that each beamlet(pl) passes through one of the blanking holes(pl) along a nominal path, and the deflection array apparatus comprises a plurality of electrostatic deflection electrodes, each electrostatic deflection electrode being associated with a blanking hole and configured to deflect the beamlet passing through each blanking hole by a sufficient amount to deviate the beamlet from its nominal path when a drive voltage is applied to each electrode.

[0035] The apparatus further comprises a positioning array for positioning at least one of the aperture array apparatus and the hole array apparatus in order to adjust the relative position of the aperture array apparatus with respect to the hole array apparatus, wherein the positioning array may be configured to selectively align a selected set of the aperture sets of the aperture array apparatus with the plurality of holes of the hole array apparatus, at least in the interlaced region of the array.

[0036] In the following, exemplary and non-limiting embodiments of the present invention will be described, as shown in the drawings, to further demonstrate the present invention. [Brief explanation of the drawing]

[0037] [Figure 1] This is a longitudinal cross-sectional overview view of a particle beam exposure apparatus suitable for the present invention. [Figure 2] This is a top view of the PD system. [Figure 3] Figure 2 is a side view of a partial cross-section of the PD system. [Figure 4] This is a detailed cross-section of a PD setup (device) with a three-plate configuration. The AAD, implemented as an opening plate, has two sets of openings. Of these, the first set of openings is operational, while the second set is stopped by the hole array device. [Figure 5] This is a top view of a portion of the opening plate of the PD system of the present invention. [Figure 6] This is a detailed view of Figure 4, illustrating the potential generation by charged secondary particles and the subsequent accumulation of charge in various parts of the aperture array device and in the collision region of the hole array device. [Figure 7] This is a detailed cross-sectional view similar to Figure 4. However, it shows multiple localized charged areas (or distributions) drawn along the edges of the regular aperture array. [Figure 8] This is the calculation result of the array of localized charged areas in the collision region of the hole array device. The inner ("center") part of the array is depicted on the left, and the edges are depicted on the right. [Figure 9] This is a detailed view of Figure 8. Here, for one opening located in the center of the hole array apparatus, the accumulation of charge on both sides of the opening in the collision region of the hole array apparatus is shown. It also shows the symmetrical distribution of the accumulated charge and the resulting potential. [Figure 10] This is a cross-sectional view of one embodiment of an aperture array device having an additional opening at the edge. [Figure 11] This is a partial top view of the aperture array device of the PD system of the present invention, which has additional openings at the edge of the aperture array device. [Figure 12] This is the calculation result of the array of locally charged areas in the collision region of a hole array device having an additional collision region due to an additional opening, according to one embodiment of the present invention. [Modes for carrying out the invention]

[0038] In the following, we will first discuss the technical background of the present invention—insofar as it relates to typical embodiments of the present invention—and then present in detail one exemplary embodiment of the present invention.

[0039] The detailed discussion of exemplary embodiments of the invention given below discloses the basic idea and further advantageous developments of the invention. It will be apparent to those skilled in the art that some or all of the embodiments discussed herein can be arbitrarily combined in any way that is deemed suitable for a particular application of the invention. Throughout this disclosure, the terms “advantageous,” “exemplary,” or “preferred” describe elements or dimensions that are particularly suitable (but not essential) for the invention or one embodiment thereof and are modifiable unless expressly required, if deemed suitable by those skilled in the art. It is understood that the invention is merely representative of one of the possible applications of the invention and is not limited to the following embodiments or specific layouts of PD systems, which are given for illustrative purposes and merely present preferred examples of the invention. Furthermore, embodiments of the invention are also suitable for other types of processing systems using multibeam setups (devices) for target exposure. Within the scope of this disclosure, terms relating to vertical direction or vertical propagation, such as “upward” or “upstream,” should be understood in relation to the direction of the beam that is considered to be traveling downward along the vertical axis. This vertical axis is similarly considered to be identical to the Z direction, which is intersected by the X and Y directions.

[0040] Charged particle multibeam system Figure 1 shows a schematic overview of an example of a charged particle multibeam mask exposure tool (mask writing machine) 100, which is a type of eMET system employing embodiments of the present invention. Hereafter, specific embodiments of the present invention are disclosed only in detail necessary to enable those skilled in the art to carry out each. For clarity, the components in Figure 1 are not shown to their actual dimensions. In particular, the width of the particle beam is exaggerated. For further details, see U.S. Patents No. 6,768,125, No. 8,546,767, and No. 7,781,748. The teachings in these documents regarding the overall layout of the particle beam apparatus and PD apparatus are given herein by reference.

[0041] A suitable source for generating an electron beam is used in system 100. In one modification, the beam may be realized by other charged particles, in particular positively charged ions using a suitable ion source. A particle optical irradiation system forms a wide beam from this beam. The wide beam irradiates a PD device having a regular array of apertures for defining the beam pattern projected onto the target surface. Each aperture defines a small beam, which is hereafter referred to here typically as a "beamlet". The passage through one aperture of each beamlet can be controlled to allow ("switch on") the beam particles to pass through the aperture and / or the subsequent reduced charged particle projection optics toward the target, or to effectively deactivate ("switch off").

[0042] Beamlets passing through an aperture array form a patterned particle beam. This patterned particle beam is represented by the spatial arrangement of the apertures and contains information about the on / off definitions of individual beamlets. The patterned beam is then projected onto a target (e.g., a mask blank or a semiconductor wafer substrate) by a reduced charged particle optical projection system. Images of these apertures, where the corresponding beams are not deflected, are thus formed, and the irradiated portion of the target is exposed or modified. The image formed by the beamlets and projected onto the substrate forms a “patterned image.” The “patterned image” is exposed along a linear path (“stripe”) on the substrate that moves mechanically in one direction. The (large) movement of the substrate is usually achieved by the continuous movement of the target stage. At the same time, fine adjustments to the projection system may be made. The direction in which the image moves relative to the stage is also called the (primary) scanning direction. Additional scanning of the beam in a direction perpendicular to the primary scanning direction is performed only within a short lateral range. For example, this is done to correct lateral movement errors of the scanning stage and / or to include a (limited) number of parallel pixel rows. This is described in detail in the present applicant's U.S. Patent No. 9,053,906, which is incorporated herein by reference.

[0043] The main components of the apparatus 100 are, in this example, in the order of the directions of the beams lb and pb moving vertically downward in Figure 1, the irradiation system 101, the PD system 102, the projection system 103, and the target station 104 having a target or substrate 14. The charged particle optical systems 101 and 103 are realized using electrostatic and / or electromagnetic lenses. The charged particle optical components 101, 102, and 103 of the apparatus 100 and the target station 104 are housed in a vacuum housing (not shown). The housing maintains a high degree of vacuum to ensure that the propagation of beams lb and pb along the optical axis of the apparatus is not obstructed.

[0044] The irradiation system 101 includes, for example, an electron or ion source 11, an extractor configuration that defines the position of the virtual source, a general-purpose blanker 12, and an irradiated charged particle optical system realized by a particle optical condenser lens system 13. The general-purpose blanker 12 is also used as a particle filter when an ion beam is used.

[0045] In this embodiment, the particle source 11 emits high-energy electrons having a suitable kinetic energy, for example, 5 keV. Alternatively, other charged particles, mainly specific types of ions, may be used. These specific types of ions are, for example, hydrogen ions or Ar+ ions, typically having a relatively small energy spread of several keV (e.g., 5 keV in PD system 102) and a predetermined (kinetic) energy, such as ΔE = 1 eV. A velocity / energy-dependent filter (not shown) may be provided to remove other undesirable particle species that may be generated in the source 11. This filter may also be used to clear the entire beam during beamlet repositioning. The condenser lens system 13 shapes the charged particles emitted from the source 11 into a broad, substantially telecentric beam ("irradiation beam") lb.

[0046] The beam lb then irradiates a blanking device. The blanking device, along with the necessary equipment (not shown) to maintain its position, forms a PD device 102. The PD device 102 will be described in detail later with reference to Figures 2-5. The PD device is held at a specific position on the path of the beam lb. As a result, the beam lb irradiates an aperture array pattern formed by multiple apertures 21. As previously described, each aperture can be "switched on" or "switched off". In the "switched on" or "open" state, the aperture allows beamlets passing through each aperture to reach the target. In this case, the aperture is transparent to the incident beam. Otherwise, the aperture is "switched off" or "closed", in which case the beam path of each beamlet is affected (e.g., by a deflection electrode to which a lateral voltage is applied: see beamlet b2 in Figure 4) in such a way that it is absorbed or deviates from the beam path before reaching the target. In this case, the aperture is substantially opaque or impermeable to the beam.

[0047] The patterns of the switched-on apertures are selected according to the pattern exposed on the substrate. Since these apertures are the only transparent parts of the PD apparatus to the beam lb, the beam lb is thus shaped into a patterned beam pb emerging from the apertures (e.g., below the PD system 102 in Figure 1). The structure and operation of the PD apparatus, particularly its blanking plate, will be discussed in detail below. In Figure 1, only five beamlets are shown as patterned beam pb. However, it will be clear that the actual number of beamlets is much larger, typically on the order of thousands or even millions. Of the illustrated beamlets, the second from the left is depicted as switched off. The second beamlet from the left is deflected by the PD apparatus 102 and absorbed by the stop plate 17. The stop plate 17 is located at or near the second crossover c2 of the charged particle projection optical system. The other beamlets are switched on and pass through the central hole of the plate 17, and are therefore projected onto the target.

[0048] The pattern, represented as a patterned beam pb, is projected onto a substrate 14 (such as a 6" (inch) mask blank with a resist coating) by a charged particle optical projection system 103. Switched-off beamlets are absorbed by a stop plate 17, so only switched-on beamlets form an image of the switched-on aperture. The projection system 103 performs a reduction ratio of, for example, 200:1, as implemented by the applicant. The substrate 14 may be, for example, a 6-inch mask blank, or a nanoimprint 1x mask, or a master template coated with a resist layer, in the case of an eMET type system. In the case of a PML2 system, the substrate 14 may be a silicon wafer coated with a particle-sensitive resist layer. The substrate 14 is held and positioned by a substrate stage (not shown) of a target station 104.

[0049] The projection system 103 is composed of, for example, two consecutive charged particle optical projector sections. Each charged particle optical projector section has crossovers c1 and c2. The particle optical lenses 30 and 31 used to realize the projector (for example, comprising an electrostatic multi-electrode accelerating lens 30 and two magnetic lenses 31) are shown in Figure 1 in symbolic form only, because the technical realization (implementation) of electrostatic imaging systems (electrostatic coupling systems) is well known in the prior art. In other embodiments of the present invention, magnetic and / or electromagnetic lenses may be included as preferred. The first projection section images the surface of the aperture of the PD device as an intermediate image, and then the intermediate image is imaged onto the substrate surface by the second projection section. Both projection sections employ reduction imaging via crossovers c1 and c2. Therefore, the intermediate image is inverted, but the final image generated on the substrate is upright (non-inverted). The reduction ratio is approximately 14:1 in both stages (both projection sections). As a result, the overall reduction ratio is 200:1. This order of magnitude reduction is particularly suitable for lithography setups (devices) in order to solve the miniaturization problem in PD devices. Charged particle optical lenses are mainly composed of electrostatic electrodes, but magnetic lenses may also be used.

[0050] Further details about the charged particle system are described in the prior literature cited above. A deflection means 16 is provided in either one or both projection sections as a means of introducing small lateral displacements, i.e., small displacements along the direction perpendicular to the optical axis cx. Such a deflection means may be implemented, for example, as a multipole electrode system, as discussed in U.S. Patents 6,768, 125. Furthermore, axial magnetic coils may be used to cause rotation of the pattern on the substrate surface, if necessary. Lateral deflection is usually very small compared to the lateral width of the patterned beam itself. Generally, it is several times the width of a single beamlet or the distance between adjacent beamlets. However, even then, it is at least an order of magnitude smaller than the beam width (it should be understood here that the lateral distance between beamlets is considerably smaller than the overall beam width of beam bp).

[0051] The pattern formed within the PD device 102 allows for the generation of any beam pattern, which can then be transferred to the substrate.

[0052] PD system and plate structure Figures 2 and 3 show one embodiment of the PD system 102 of the apparatus 100. Specifically, Figure 2 is a top view, and Figure 3 is a combination of a side view and a longitudinal section view. Figure 4 is a detail of the section view in Figure 3, showing a section of the plate of the PD system 102 along the paths of five beamlets passing through the PD system 102 (five other expected beamlets are removed internally).

[0053] The PD system 102 comprises a number of plates 22 mounted in a stacked configuration. The number of plates 22 realizes a composite device in which each component performs its respective function. The number of plates 22 includes, for example, an aperture array device (also called an aperture plate) 201, a hole array device (also called a beam selection plate) 202, and a deflection array device (also called a blanking plate) 203. Further component plates may be present, such as adjustment plates (not shown; see U.S. Patent No. 6,768,125) for individual fine-tuning of the beamlet path. Each plate 22 is realized as a film portion formed in a semiconductor (particularly silicon) wafer, in particular a plate represented by a PD field pf having multiple holes, shown by cross (lattice) hatching in Figure 2. The wafer is formed by a well-known microstructure wafer. The lithography beam traverses the plate through continuous holes (up and down) in the PD field pf, as will be further described below.

[0054] The plate 22 is held by a chuck 23. The chuck 23 is positioned relative to each other by drive units 241, 242, and 243. These drive units 241, 242, and 243 are implemented as known piezo actuators or nanopositioning elements and are attached to the chucks via flexible joints and fixed to the support structure 24 of the PD system. The chucks are connected vertically using sliding bearings 25. Preferably, the plate 22 and the chuck 23 are manufactured from the same material. The same material is, for example, silicon, or a material having the same thermal expansion behavior (properties) in the operating temperature range. The chucks also provide power to the blanking plate 203. For clarity, the wires are not shown.

[0055] The plate 22 may be provided with reference marks 26 for defining the reference beam. The shape of the reference beam rb is defined, for example, by one of the plates 22, for example, one opening formed in the aperture plate 201. Meanwhile, corresponding holes in the other plates are wide enough to allow the radiation of the reference beam to pass through. The reference beam is then imaged together with the patterned beam pb. However, unlike the patterned beam, the reference beam does not reach the substrate 41 and is measured in the alignment system (see U.S. Patents 7,772, 574). Furthermore, the chuck 23 has alignment holes 236. The alignment holes 236 function as alignment markers for the relative alignment of the chuck 23 and the plate held by the chuck 23.

[0056] The film thickness of each plate 22 is approximately 30-100 μm. The film of the blanking plate may be thicker if appropriate from the standpoint of better heat conduction. The frame of the plate is sufficiently thick, on the order of 0.750 mm. The distance between plates is on the order of 0.5 to several mm. Note that in Figure 4, the dimensions on the vertical axis (z-axis parallel to the optical axis of the device) are not to scale.

[0057] Figure 4 shows a detailed longitudinal section of the film portion of plate 22 in Figure 3. Here, only the portion corresponding to the paths of 10 expected beamlets (of which 5 are selected as the final beamlets) out of the numerous beamlets in the PD field pf is shown. As already mentioned, the illustrated embodiment realizes a three-plate arrangement configuration consisting of three plates 201, 202, and 203. Here, the first plate 201 realizes the AAD (aperture array), the second plate 202 realizes the hole array device (beam selection plate), and the third plate 203 functions as the deflection array device (blanking plate). The first plate is an aperture array device realized as an aperture plate 201 having multiple sets of apertures 211, 212 of different sizes and / or shapes. Further details will be described later. Aperture 211 defines the expected beamlets b1...b5. Aperture 212 defines the expected beamlets b1'...b5'. All the expected beamlets formed in this manner proceed toward the beam selection plate 202. The beam selection plate is provided with holes 220. Through holes 220, only one set of expected beamlets, in this case beamlets b1...b5 that have passed through aperture 211, can proceed further. The other beamlets (in this case b1'...b5') are absorbed by the beam selection plate and are essentially removed. For this purpose, the holes 220 in the beam selection plate are wider than the apertures 211 and 212.

[0058] Figure 5 is a top view of a portion of the opening plate 201. Here, only the portion containing 3x3 groups of openings is shown. Each group contains three different types of openings 211, 212, and 213. The line 4-4 shows the cross-section of the section view in Figure 4. Arrow d12 indicates the relative offset between one type of opening 211 and a different type of opening 212. By this offset, the opening plate is shifted to select opening 212 instead of opening 211.

[0059] The third plate 203 of the PD system 200 is a deflection array plate, commonly called a blanking plate. It has a set of holes 230. The holes 230 are positioned to correspond to the paths of beamlets b1...b5 determined by the aperture plate 201. However, the holes 230 have a greater width than the width of the apertures 211, 212 (in other words, the holes 230 are larger). This allows the beamlets to pass through the former without affecting the material of the blanking plate. Each hole 230 is equipped with electrodes 231, 232. These electrodes can provide a small but sufficient deflection to the corresponding beamlet, depending on the voltage selectively applied between each pair of electrodes 231, 232. For example, one electrode 232 is kept at ground potential and functions as a counter electrode, while the other electrode 231 functions as an active electrode. The active electrode is connected to the circuit layer of the blanking plate 203 to apply a potential for deflecting the selected beamlets b1...b5. Each beamlet can thus be deflected individually. The blanking plate also includes circuitry for electronic control and power supply to the electrodes. Further details of the PD apparatus, including details of the blanking plate circuitry, are discussed in the Assignee / Applicant's U.S. Patents 6,768,125, 7,781,748, and 8,222,621.

[0060] Each beamlet b1...b5 selected in this manner, if the corresponding blanking electrodes 231, 232 are not energized, passes through the next hole in plate 22 along its nominal path. This corresponds to the "switched-on" state of the aperture. The "switched-off" aperture is achieved by energizing the electrodes, i.e., by applying a transverse voltage. In this state, the corresponding blanking electrodes 231, 232 deflect beamlet b2 from its nominal path, as shown in beamlet b2. As a result, the beamlet is deflected (slightly but sufficiently) to a different path. The deflected path is ultimately led to some absorption surface. This absorption surface is preferably located on a block aperture 17 situated around either of the intersections c1, c2 (Figure 1). In the illustrative description in Figure 4, the deflection angle of the deflected beamlet b2 is exaggerated for clarity.

[0061] Aperture plate, multiple aperture grids and additional apertures, hole array device The apertures 211, 212, and preferably the corresponding holes 220 in the beam selection plate and the corresponding holes 230 in the blanking plate, are also regularly arranged along a defined grid. Each grid is, for example, a regular array of rectangles or a regular array forming a zigzag line. The zigzag line extends parallel to the direction corresponding to the relative motion of the image of the aperture on the target, as described in U.S. Patent No. 6,768, 125. In each line of arrangement, the offset between consecutive (adjacent) apertures of the same type is preferably a multiple of the grid width that forms the basis of the aperture arrangement, as shown in Figure 5 as one embodiment of the present invention. The apertures shown in Figure 5 each represent three combined grids representing such an arrangement. In general, the apertures will be located at each intersection of a substantially regular two-dimensional grid. However, the grid may, additionally, be slightly deviated from a perfectly regular grid. This is to allow for possible distortion in the imaging system. This compensates for imaging errors caused by such small shifts in the aperture position, resulting in accurate and compensated positioning of each aperture image on the target.

[0062] As described above, the aperture plate comprises multiple aperture sets. Each aperture set can be selected to image onto a target. Further details regarding the selection of a given aperture set and the relative alignment of the aperture plate, beam selection plate, and blanking plate of the PD apparatus are discussed in U.S. Patent No. 6,768,125.

[0063] Figures 6, 7, and 8 show the problems in the use of PD devices that the inventors have analyzed and already described above (in the chapter "Prior Art [Problems to be Solved by the Invention]").

[0064] Figure 6 is a magnified section of Figure 4. The beamlet b6' (which may be any of the beamlets b1'...b5' in Figure 4) interacts with the bulk material of the beam selection plate 202, generating secondary particles 221, such as electrons. Some of the secondary particles remain within the material, while others are emitted from it. Predominantly and intuitively, the secondary particles (especially electrons) likely deposit in the collision region of the beam selection plate (i.e., the region or portion of the surface of the beam selection plate 202 corresponding to the aperture of at least one set of apertures in the aperture plate 201), and also on the aperture plate 201 above, causing charge accumulation. These are shown in Figure 6 by reference numerals 222 and 213. Such charges accumulate and form an electric field, shown in Figure 6 by dashed electric field lines 223. These electric field lines have the effect of deflecting beamlet b6 (which may be any of beamlets b1...b5 in Figure 4). In this way, undesirable beamlet displacement is caused on the target surface, thereby degrading the accuracy of the pattern.

[0065] Figure 7 shows several local charge distributions (referred to as charged areas) located near the edges of the array. The lateral deflection of the beamlets is greater at the edges of the regular aperture array apparatus 201 and the hole array apparatus 202. The deflection is smaller for beamlets closer to the center of the aperture array apparatus 201. As shown by α9, α10, and α11 in Figure 7, the deflection angle increases towards the edges. The center of the aperture array apparatus (and hole array apparatus, respectively) is essentially the central region, or center, of the inner surface region of the aperture array apparatus 201. The center is partially, preferably entirely, surrounded by the edges. The edges may also be described as frames surrounding the central region.

[0066] Figure 8 shows a cross-sectional view of the calculated array of local charge distributions 222 located in the collision region of the hole array apparatus 202. Figure 8 also shows the effect on the beamlet, i.e., the local beamlet deflection effect, as detailed below. Figure 8 shows a total of seven local charge distributions 222 in the corresponding collision region. The center of the hole array apparatus 202, along with two holes a1 and a2 near the center and a comparison beamlet, is shown on the left side of Figure 8 by a dashed line 227. The edge of the hole array apparatus 202, with four holes a3, a4, a5, and a6, is shown on the right side of Figure 8. Several electrically equipotential regions are drawn with thin solid lines 223 and 228, and the corresponding electric fields are indicated by double-headed arrows 224. The double-headed arrows 224 indicate the force acting on negatively charged particles at each position of the arrow. The relative intensity of the electric field is indicated by the size of the double-headed arrows 224. The beamlet paths are shown by the thick black lines 225. The lateral positional changes relative to the undefended beamlets are exaggerated for clarity. The single-headed arrows 226 in the holes of the hole array apparatus 202 indicate the beamlet deflection angles on the surface of the hole array apparatus. The deflection angles are exaggerated for clarity. Lateral beamlet deflection increases in the beamlets at the edges of the regularly spaced hole array apparatus 202.

[0067] Figure 9 shows a magnified detail of Figure 8, illustrating a single hole a1 and the corresponding beamlet 225, along with the associated potential distribution 228. The potential distribution 228 is generated by local charge distributions (also called "charge accumulation sites") 222 symmetrically arranged in the collision region of the hole array apparatus 202. Hole a1, shown in Figure 9, is one of the interiors of the hole array. The corresponding electric field 229 at an intermediate position between charge accumulation sites through which a normal beamlet passes is predominantly oriented parallel to the propagation direction of the normal beamlet 225. Therefore, the lateral deflection of the passing normal beamlet 225 is smaller compared to a single charge accumulation site. This will be further explained below.

[0068] In contrast, in the space between the hole array apparatus 202 and the aperture array apparatus 201, at a predetermined vertical distance from a single charged site, the local charge distribution 222 generates an electric field throughout the entire charged region. This electric field is superimposed on a relatively smoothly changing potential distribution 223 (see Figure 8) and a corresponding electric field 224 whose spatial variation is negligible. This is very similar to the electric field in a capacitor constructed of two parallel plates, where the size of the plates corresponds to the entire charged region of the hole array apparatus 202 and the aperture array apparatus 201. The superimposed electric field 224 has a wider reach than the electric field induced by a single local charge, and therefore has a stronger influence on the outer beamlets. Thus, all beamlets passing through the superimposed electric field 224 interact with the field. At the edge immediately outside the outermost hole a6, the superimposed electric field 224 is predominantly in a direction perpendicular (or orthogonal) to the normal beamlet propagation direction (see Figure 8).

[0069] All beamlets passing through the interior (also called the center or central region) of the hole array apparatus 202 (the region shown on the left side of Figure 8) will experience negligible lateral deflection. This results in negligible lateral beam displacement and angular deviation on the surface of the hole array apparatus. This, in turn, causes negligible lateral beam displacement and angular deviation on the target surface.

[0070] In contrast, further outside the edge of the hole array device 202, the superimposed electric field 224 disappears toward the uncharged region in a manner similar to the fringe electric field at the edge of a parallel plate capacitor. As a result, the lateral electric field component becomes non-negligible, causing lateral beam displacement and angular deviation between the surface of the hole array device and the target surface.

[0071] Figure 10 shows an exemplary embodiment of the present invention intended to overcome undesirable lateral deflection of beamlets at the edge of the hole array device 302, in a cross-sectional view equivalent to that of Figures 4 and 7. This embodiment is based on a multi-beam pattern defining device 32 of the type described in the chapter describing the prior art [problems to be solved by the invention]. This multi-beam pattern defining device 32 comprises an aperture array device 301 and a hole array device 302 preferably located downstream of the aperture array device 301. The aperture array device 301 comprises at least two sets of regular apertures 311, 312. These apertures are used at least partially to shape beamlets b7...b11 that are transferred to a target. An additional set of apertures 314 is positioned near the regular apertures without overlapping with the aforementioned sets 311, 312, and forms beamlets b11'...b13' that collide with the collision region of the hole array device 302. Similar to the embodiments described above, this generates an additional local charge distribution 322 that generates a corresponding electric field. This is then added to the superimposed electric field 323 (Figure 12). Consequently, as seen in Figure 12, the superimposed electric field 323 is extended laterally toward the edge of the hole array apparatus 302. As a result, the entire charged region expands laterally. Consequently, the aforementioned non-negligible lateral electric field component decreases in the region above the edge. This is because the distance of the transition region from the charged region to the uncharged region on the surface of the hole array apparatus 302 increases. In other words, the unwanted, non-negligible lateral electric field component is "shifted" outward to the far edge of the hole array apparatus 302. This reduces the unwanted, lateral deflection of the beamlet.

[0072] Figure 11 is a top view of a portion of the opening plate 301. This opening plate 301 includes regular openings and additional openings. In the illustrated embodiment, the regular opening set comprises a 3x3 group of openings. Each group comprises three different types of openings 311, 312, and 313. Line 4-4 indicates the cross-sectional line of the cross-sectional view in Figure 10. Arrow d12 indicates the relative offset between one type of opening 311 and another type of opening 312. To select opening 312 instead of opening 311, the opening plate is shifted by this offset amount.

[0073] A set of regular openings 311, 312, and 313 (in Figure 11, only a small portion of the opening plate 301 is shown; therefore, the additional opening 314 is only visible to the right of the regular openings 311, 312, and 313) is surrounded by the additional opening 314. In this way, multiple openings arranged in a substantially regular arrangement are realized on the opening array device 301. In the illustrated example, two rows of additional openings 314 surround the regular openings 311, 312, and 313. The additional openings 314 are of the same size and their arrangement is uniform. Of course, it is also possible to have only one row or two or more rows of additional openings 314 instead, and the additional openings 314 may be of different sizes and may be arranged in a non-uniform arrangement. The individual sizes and arrangements of the additional apertures 314 are advantageously such that the resulting additional charge distribution (each additional localized charged area) in the collision region of the hole array apparatus 301 generates a superimposed electric field with similar amplitude and orientation to that generated by the regular apertures 311, 312, and 313.

[0074] Figure 12 shows a cross-sectional view illustrating the calculation results of the local charge distribution array in the hole array apparatus 302 shown in Figure 10. The thick vertical line 325 indicates the path of the beamlet passing through the holes of the hole array apparatus 302. At the edges of the hole array apparatus 302, an additional local charge distribution 322 forms a laterally extended superimposed electric field 323. The double-headed arrow 324 indicates the direction of the force acting on negatively charged particles at each arrow's position. Due to the lateral extension of the superimposed electric field 323, the beamlet deflection angle 326 at the edges of the hole array apparatus surface is negligibly small, in contrast to the state shown in Figure 8. As a result, no (undesirable) lateral deflection occurs in the beamlets at the edges of the hole array apparatus 301.

[0075] All or part of the above embodiments may be described as follows, but are not limited to them. [Note 1] A multi-beam pattern regulating device for use in particle beam processing or inspection equipment, wherein a beam of charged particles (multiple) is irradiated, and the beam is adapted to pass through multiple apertures, thereby forming a corresponding number of beamlets (multiple), Aperture array device, A hole array device, The aperture array device is The aforementioned openings (multiple) are realized, Equipped with at least two sets of openings, Each aperture set comprises a plurality of apertures arranged in a substantially regular arrangement on the aperture array device, The array(s) of the aforementioned aperture set are at least partially interlaced. The openings of different sets of openings are offset from each other by a displacement corresponding to a common displacement vector, at least in the region where the arrays are interlaced. The aforementioned hole array device is Located downstream of the aforementioned aperture array device, It has a plurality of holes configured to allow beamlets formed by at least one subset of the aforementioned apertures to pass through, Equipped with multiple collision areas, The collision regions(s) are located in at least one region corresponding to the region in which the array(s) interlace, and are positioned at a location corresponding to the opening(s) of at least one of the opening sets. Charged particles passing through the openings of the at least one set of openings corresponding to the collision regions(s) collide with the collision regions(s). The plurality of holes in the hole array device are arranged in a substantially regular arrangement in the region, corresponding to the arrangement of at least one other set of openings of the opening array device. The aperture array apparatus comprises a plurality of additional apertures, the additional apertures located outside the region of the interlacing array of the at least two sets of apertures, and the additional apertures are configured to allow charged particles to pass through in order to form additional beamlets. The hole array device is a multi-beam pattern defining device comprising additional collision regions, the additional collision regions being positioned at locations corresponding to the additional apertures of the aperture array device such that charged particles passing through the additional apertures collide with the additional collision regions. [Note 2] In the multi-beam pattern defining apparatus described above, in particular the multi-beam pattern defining apparatus described in Appendix 1, Charged particles colliding in multiple collision regions form multiple local charge distributions. Charged particles colliding with additional collision regions form additional local charge distributions. Preferably, the additional opening(s) are configured such that the charge of the additional local charge distribution is substantially equal to the charge of the local charge distribution. [Note 3] In the multi-beam pattern defining apparatus described above, in particular the multi-beam pattern defining apparatus described in Appendix 1 or 2, The at least two sets of openings in the opening array device are located in the center of the opening device, and the additional openings are located at the edges of the opening device. Preferably, the edge surrounds the central part at least partially or completely. [Note 4] In the multi-beam pattern defining apparatus described above, in particular in the multi-beam pattern defining apparatus described in Appendix 3, The aforementioned edge surrounds the central part, Preferably, the edge extends beyond at least 10% of the entire surface of the aperture array device. [Note 5] In the multi-beam pattern defining apparatus described above, in particular, in any of the multi-beam pattern defining apparatuses described in Appendix 1 to 4 above, The aforementioned aperture array device and the aforementioned hole array device are, -The first beamlets(pl) formed by the first set of apertures of the aperture device can pass through the corresponding holes(pl) of the hole array device. - The second beamlets formed by the second set of apertures of the aperture device can collide with the collision regions of the hole array device, and these collision regions correspond to the apertures of the second set of apertures. The charged particles of the second beamlets form local charge distributions in each collision region corresponding to each aperture of the second set of apertures. - The third beamlets formed by the plurality of additional openings of the aperture device can collide with the additional collision regions of the hole array device, and the additional collision regions correspond to the additional openings. The charged particles of the third beamlet(s) form additional local charge distributions(s) in each additional collision region corresponding to each additional aperture(s). It is preferable to arrange them in this manner. [Note 6] In the multi-beam pattern defining apparatus described above, in particular, in any of the multi-beam pattern defining apparatuses described in Appendix 1 to 5 above, Preferably, the additional openings(s) are arranged on the opening array device in a substantially regular arrangement. [Note 7] In the multi-beam pattern defining apparatus described above, in particular in the multi-beam pattern defining apparatus described in Appendix 6, Preferably, the more substantially regular arrangement is a continuation of one of at least two sets of apertures on the aperture array device, which are at least partially interlaced and substantially regular arrangements. [Note 8] In the above-mentioned multi-beam pattern defining apparatus, in particular, in any of the multi-beam pattern defining apparatuses described in Appendix 1 to 7 above, The size of the additional opening(s) is preferably such that the additional local charge distribution(s) formed by the additional beamlets(s) colliding with the additional collision regions(s) of the hole apparatus is essentially equal to the local charge distribution formed by the beamlets(s) colliding with the collision regions(s) of the hole apparatus. [Note 9] In the above-mentioned multi-beam pattern defining apparatus, in particular, in any of the multi-beam pattern defining apparatuses described in Appendix 1 to 8 above, Preferably, the density of additional openings per surface of the opening array device is essentially equal to the density per surface of one of the at least two sets of openings. [Note 10] In the multi-beam pattern defining apparatus described above, in particular, in any of the multi-beam pattern defining apparatuses described in appendices 1 to 9 above, Preferably, the distance between one opening in the at least two sets of openings and an adjacent additional opening is greater than or equal to the distance between two adjacent openings in one of the sets of at least two sets of openings. [Note 11] In the above-mentioned multi-beam pattern defining apparatus, in particular, in any of the multi-beam pattern defining apparatuses described in Appendix 1 to 10, The deflection array device further comprises a plurality of blanking holes, wherein each beamlet passes through one of the blanking holes along a nominal path. Preferably, the deflection array device comprises a plurality of electrostatic deflection electrodes, each electrostatic deflection electrode being associated with a blanking hole, and when a driving voltage is applied to each electrode, it is configured to deflect the beamlet passing through each blanking hole by a sufficient amount to deviate the beamlet from its nominal path. [Note 12] In the above-mentioned multi-beam pattern defining apparatus, in particular, in any of the multi-beam pattern defining apparatuses described in appendices 1 to 11, Preferably, the system further includes a positioning array for positioning at least one of the aperture array device and the hole array device in order to adjust the relative position of the aperture array device with respect to the hole array device, wherein the positioning array is configured to selectively align a selected set of the aperture sets of the aperture array device with the plurality of holes of the hole array device, at least in the interlaced region of the array.

[0076] Within the framework of the full disclosure of the present invention (including the claims and drawings), further modifications and adjustments to the embodiments are possible based on the fundamental technical concept. Furthermore, within the framework of the full disclosure of the present invention, various combinations or selections (including "non-selection") of various disclosed elements (including each element of each claim, each element of each embodiment, each element of each drawing, etc.) are possible. In other words, the present invention includes the full disclosure, including the claims and drawings, and of course, various modifications and alterations that a person skilled in the art could make in accordance with the technical concept of the present invention. In particular, the numerical ranges described in this book should be interpreted as including any specific numerical values ​​or sub-ranges within those ranges, even if not otherwise stated.

[0077] Furthermore, the reference numerals in the drawings included in the claims are solely for the purpose of aiding the understanding of the invention and are not intended to limit the present invention to the embodiments and illustrated examples.

[0078] Furthermore, the entire contents of each of the above-mentioned documents are incorporated into this book by citation and are presented herein.

Claims

1. A multi-beam pattern regulating device for use in particle beam processing or inspection equipment, wherein a beam of charged particles (multiple) is irradiated, and the beam is adapted to pass through multiple apertures, thereby forming a corresponding number of beamlets (multiple), Aperture array device, A hole array device, The aperture array device is The aforementioned openings (multiple) are realized, Equipped with at least two sets of openings, Each aperture set comprises a plurality of apertures arranged in a substantially regular arrangement on the aperture array device, The array(s) of the aforementioned aperture set are at least partially interlaced. The openings of different sets of openings are offset from each other by a displacement corresponding to a common displacement vector, at least in the region where the arrays are interlaced. The aforementioned hole array device is Located downstream of the aforementioned aperture array device, It has a plurality of holes configured to allow beamlets formed by at least one subset of the aforementioned apertures to pass through, Equipped with multiple collision areas, The collision regions (multiple) are located in at least one region corresponding to the region in which the arrays (multiple) are interlaced, at positions corresponding to the openings (multiple) of at least one set of openings. Charged particles passing through the openings of the at least one set of openings corresponding to the collision regions(s) collide with the collision regions(s), The plurality of holes in the hole array device are arranged in a substantially regular arrangement in the region, corresponding to the arrangement of at least one other set of openings of the opening array device. The aperture array apparatus comprises a plurality of additional apertures, the additional apertures located outside the region of the interlacing array of the at least two sets of apertures, and the additional apertures are configured to allow charged particles to pass through in order to form additional beamlets. The hole array device is a multi-beam pattern defining device comprising additional collision regions, the additional collision regions being positioned at locations corresponding to the additional apertures of the aperture array device such that charged particles passing through the additional apertures collide with the additional collision regions.

2. A multi-beam pattern defining apparatus according to claim 1, Charged particles colliding in multiple collision regions form multiple local charge distributions. Charged particles colliding with additional collision regions form additional local charge distributions. A multi-beam pattern defining device wherein the additional aperture(s) are configured such that the charge of the additional local charge distribution is substantially equal to the charge of the local charge distribution.

3. A multi-beam pattern defining apparatus according to claim 1 or 2, The at least two sets of openings in the opening array device are located in the center of the opening array device, and the additional openings are located at the edges of the opening array device. The aforementioned edge portion surrounds the central portion at least partially or completely, a multi-beam pattern defining device.

4. A multi-beam pattern defining apparatus according to claim 3, The aforementioned edge surrounds the central part, The edge portion extends beyond at least 10% of the entire surface of the aperture array device, and is a multi-beam pattern defining device.

5. A multi-beam pattern defining apparatus according to claim 1, The aforementioned aperture array device and the aforementioned hole array device are, - The first beamlets(pl) formed by the first set of apertures of the aperture array apparatus can pass through the corresponding holes(pl) of the hole array apparatus. - The second beamlets formed by the second set of apertures of the aperture array apparatus can collide with the collision regions of the aperture array apparatus, and these collision regions correspond to the apertures of the second set of apertures. The charged particles of the second beamlets form local charge distributions in each collision region corresponding to each aperture of the second set of apertures. - The third beamlets formed by the plurality of additional apertures of the aperture array apparatus can collide with the additional collision regions of the aperture array apparatus, and the additional collision regions correspond to the additional apertures. The charged particles of the third beamlet(s)(s) form additional local charge distributions(s) in each additional collision region corresponding to each additional aperture(s). A multi-beam pattern defining device, arranged in such a manner.

6. A multi-beam pattern defining apparatus according to claim 1, The additional apertures are arranged in a substantially regular arrangement on the aperture array device, in a multi-beam pattern defining device.

7. A multi-beam pattern defining apparatus according to claim 6, A multibeam pattern defining device wherein the further substantially regular arrangement is a continuation of one of at least two sets of apertures on the aperture array device, substantially regular arrangements, at least partially interlaced.

8. A multi-beam pattern defining apparatus according to claim 1, A multi-beam pattern defining apparatus, wherein the size of the additional aperture(s) is such that the additional local charge distribution(s) formed by the additional beamlets(s) colliding with the additional collision regions(s) of the hole array apparatus are essentially equal to the local charge distribution formed by the beamlets(s) colliding with the collision regions(s) of the hole array apparatus.

9. A multi-beam pattern defining apparatus according to claim 1, A multi-beam pattern defining apparatus in which the density of additional apertures per surface of the aperture array apparatus is essentially equal to the density per surface of one of the at least two sets of apertures.

10. A multi-beam pattern defining apparatus according to claim 1, A multi-beam pattern defining device, wherein the distance between one aperture of the at least two aperture sets and an adjacent additional aperture is greater than or equal to the distance between two adjacent apertures of one of the at least two aperture sets.

11. A multi-beam pattern defining apparatus according to claim 1, The deflection array device further comprises a plurality of blanking holes, wherein each beamlet passes through one of the blanking holes along a nominal path. The deflection array device comprises a plurality of electrostatic deflection electrodes, each electrostatic deflection electrode being associated with a blanking hole, and is configured to deflect a beamlet passing through each blanking hole by a sufficient amount to deviate the beamlet from its nominal path when a driving voltage is applied to each electrode, in a multi-beam pattern defining device.

12. A multi-beam pattern defining apparatus according to claim 1, A multi-beam pattern defining device further comprising a positioning array for positioning the aperture array device and at least one of the hole array device in order to adjust the relative position of the aperture array device with respect to the hole array device, wherein the positioning array is configured to selectively align a selected set of the aperture sets of the aperture array device with the plurality of holes of the hole array device, at least in the region in which the array interlaces.

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