Manufacturing method for electronic device and film deposition method

Abstract

To suppress the enlargement of a device.SOLUTION: A manufacturing method for an electronic device has a first mask forming step of forming a first mask patterned by photolithography, a first film deposition step of forming a first light-emitting layer on a substrate using the first mask, a first encapsulation step of forming an encapsulating film on the first light-emitting layer, a second mask forming step for forming a second mask patterned by photolithography after the first encapsulation step, and a second film deposition step of forming a second light-emitting layer on the substrate using the second mask.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing an electronic device and a method for forming a film. [Background technology]

[0002] In the manufacture of organic EL display devices (organic EL displays), a film may be formed on a substrate by depositing a deposition material onto the substrate. Patent Document 1 discloses a film formation apparatus that performs in-line film formation. In the film formation apparatus disclosed in Patent Document 1, a number of connected vacuum chambers constitute one production line. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2021-145096 A Summary of the Invention [Problem to be solved by the invention]

[0004] In the technique described in Patent Document 1, deposition is performed by overlapping a substrate and a mask. Since the mask is transported separately from the substrate, the apparatus may become large.

[0005] An object of the present invention is to provide a technique for preventing an increase in the size of an apparatus used for film formation.

[0006] The present invention relates to [Means for solving the problem]

[0007] According to the present invention, a first mask forming step of forming a first mask patterned by photolithography; a first film formation step of forming a first light-emitting layer on a substrate using the first mask; a first sealing step of forming a sealing film on the first light-emitting layer; a second mask forming step of forming a second mask patterned by photolithography after the first sealing step; and a second film forming step of forming a second light-emitting layer on a substrate using the second mask. Effect of the Invention

[0008] According to the present invention, it is possible to suppress an increase in size of an apparatus used for film formation. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic diagram showing a configuration of a film forming apparatus according to an embodiment. [Diagram 2] FIG. 2 is a diagram illustrating a cross-sectional structure of a substrate according to an embodiment. [Diagram 3] FIG. 2 is a diagram illustrating a cross-sectional structure of a substrate according to an embodiment. [Figure 4] 1A and 1B are schematic views showing a cross-sectional structure and a planar structure of a light-emitting element according to an embodiment. [Diagram 5] 2A to 2C are schematic views showing the cross-sectional structure of a light-emitting device according to an embodiment. [Figure 6] 1A and 1B are schematic views showing a cross-sectional structure of a light-emitting device according to an embodiment. [Figure 7] 1A and 1B are schematic views showing a cross-sectional structure of a light-emitting device according to an embodiment. [Figure 8] 1A and 1B are schematic views showing a cross-sectional structure of a light-emitting device according to an embodiment. [Figure 9] 1A and 1B are schematic views showing a cross-sectional structure of a light-emitting device according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0011] In each drawing, the X and Y directions indicate the horizontal direction, and the Z direction indicates the vertical direction. In order to make the drawings easier to understand, some of the reference symbols may be omitted when the same elements are shown multiple times.

[0012] <Film forming equipment> 1 is a schematic diagram showing the configuration of a film forming apparatus 1 according to one embodiment. The film forming apparatus 1 is an apparatus for forming a film on a substrate 100. In the film forming apparatus 1, the substrate 100 is sequentially transported to a film forming block 301, and a film is formed on the substrate 100. Such a film forming apparatus is used, for example, for manufacturing each element of an organic EL display device. Alternatively, such a film forming apparatus is used for surface treatment such as painting or forming a protective layer.

[0013] In the film formation block 301, a plurality of processing chambers 303a to 303d in which processing of the substrate 100 is performed and a mask storage chamber 305 in which masks before and after use are stored are arranged around a transfer chamber 302 having an octagonal shape in a plan view. A transfer robot 302a for transferring the substrate 100 is arranged in the transfer chamber 302. The transfer robot 302a includes a hand for holding the substrate 100 and an articulated arm for moving the hand in a horizontal direction. In other words, the film formation block 301 is a cluster type film formation unit in which a plurality of processing chambers 303a to 303d are arranged so as to surround the transfer robot 302a. The processing chambers 303a to 303d each perform a predetermined processing on the substrate. In the following description, the processing chambers 303a to 303d may be referred to as processing chambers 303 when there is no particular distinction between them. In each processing chamber 303, one or more types of processing are performed on the substrate. The processes carried out in the process chamber 303 include alignment of the substrate and mask, deposition of a deposition material onto the substrate through the mask, etching of the substrate, cleaning of the substrate, application of a liquid onto the substrate, measurement of the substrate, and the like.

[0014] In the transport direction (arrow direction) of the substrate 100, a buffer chamber 306, a swirl chamber 307, and a delivery chamber 308 are disposed on the upstream side and downstream side of the film formation block 301, respectively. In the manufacturing process, each chamber is maintained in a vacuum state. Although only one film formation block 301 is illustrated in FIG. 1, the film formation apparatus 1 according to this embodiment has a plurality of film formation blocks 301, and the plurality of film formation blocks 301 are connected by a connection device composed of the buffer chamber 306, the swirl chamber 307, and the delivery chamber 308. The configuration of the connection device is not limited to this, and may be composed of, for example, only the buffer chamber 306 or the delivery chamber 308.

[0015] The transport robot 302a transports the substrate 100 from the upstream delivery chamber 308 to the transport chamber 302, transports the substrate 100 between the processing chambers 303, transports the mask between the mask storage chamber 305 and the processing chamber 303, and transports the substrate 100 from the transport chamber 302 to the downstream buffer chamber 306.

[0016] The buffer chamber 306 is a chamber for temporarily storing the substrates 100 depending on the operating status of the film forming apparatus 1. The buffer chamber 306 is provided with a multi-stage substrate storage shelf (also called a cassette) capable of storing a plurality of substrates 100 while maintaining the substrates 100 in a horizontal state with their surfaces to be processed (surfaces to be film-formed) facing downward in the direction of gravity, and a lifting mechanism for lifting and lowering the substrate storage shelf to match the stage for loading or unloading the substrates 100 with the transport position. This allows the buffer chamber 306 to temporarily store and retain a plurality of substrates 100.

[0017] The swirl chamber 307 is equipped with a device for changing the orientation of the substrate 100. In this embodiment, the swirl chamber 307 rotates the orientation of the substrate 100 by 180 degrees using a transport robot 307a provided in the swirl chamber 307. The transport robot 307a provided in the swirl chamber 307 rotates 180 degrees while supporting the substrate 100 received in the buffer chamber 306 and delivers it to the delivery chamber 308, so that the front end and the rear end in the transport direction (arrow direction) of the substrate 100 are swapped between the buffer chamber 306 and the delivery chamber 308. As a result, the orientation of the substrate 100 when it is carried into the film formation chamber 303 is the same in each film formation block 301, so that the scan direction of film formation and the orientation of the mask for the substrate 100 can be matched in each film formation block 301. With this configuration, the orientation of the masks placed in the mask storage chambers 305 in each deposition block 301 can be aligned, simplifying mask management and improving usability.

[0018] The delivery chamber 308 is a chamber for delivering the substrate 100 carried in by the transport robot 307a in the swirl chamber 307 to the transport robot 302a in the downstream film formation block 301. If necessary, the delivery chamber 308 may measure the thickness of the film formed on the substrate 100. That is, the delivery chamber 308 may be an inspection chamber for inspecting the film formed on the substrate 100.

[0019] The control system of the film forming apparatus 1 includes a host device 300 that controls the entire line as a host computer, and controllers 309, 310, 311, 313a to 313d that control each component, and they can communicate with each other via a wired or wireless communication line 300a. The controllers 313a to 313d are provided corresponding to the film forming chambers 303a to 303d, and control the film forming apparatus 1 described below. The controller 309 controls the transfer robot 302a. The controller 310 controls the transfer robot provided in the swirl chamber 307. The controller 311 controls the equipment that performs alignment and film thickness measurement in the delivery chamber 308. The host device 300 transmits information about the substrate 100 and instructions such as transfer timing to each of the controllers 309, 310, 311, 313a to 313d, and each of the controllers 309, 310, 311, 313a to 313d controls each component based on the received instructions.

[0020] <Film formation method> The film formation method of this embodiment will be described with reference to Fig. 2. Fig. 2(a) shows a process of forming a mask 102 on a substrate 100. The mask 102 is formed along the film formation surface of the substrate 100, facing the substrate 100. The mask 102 is formed by patterning using photolithography.

[0021] 2(b) to (c) show a process of forming a film on a substrate 100 through a mask 102 in a processing chamber 303. The mask 102 has openings. A film is formed on the substrate by a material that constitutes the film passing through the openings of the mask 102 and adhering or depositing on the substrate. Methods that can be used include deposition, sputtering, CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), ADL (Atomic Layer Deposition), and liquid application such as an inkjet method.

[0022] In the process shown in FIG. 2(b), a film 110 is formed on the substrate 100. The film 110 is made of an organic material. In the process shown in FIG. 2(c), a film 112 is formed on the substrate 100. The film 112 is made of an inorganic material. A typical inorganic material is a metal. The mask 102 used when forming the film 110 is also used when forming the film 112. That is, the films 110 and 112 are formed on the substrate via the common mask 102.

[0023] To perform such a film formation method, the film formation apparatus may include a plurality of film formation sources of different materials in one chamber. For example, in the case of a vapor deposition apparatus, it is preferable that both an organic material evaporation source and a metal material evaporation source are provided in one chamber. Of course, a configuration in which the substrate 100 and the mask 102 are transported through a plurality of chambers while being stacked may also be adopted. Alternatively, a configuration in which both an organic film formation source and a metal film formation source are arranged in one line in an in-line type film formation apparatus may also be adopted.

[0024] <Another deposition method> Another film forming method of the present embodiment will be described with reference to Fig. 3. In Fig. 3, the same parts as in Fig. 2 are given the same reference numerals as in Fig. 2, and duplicated descriptions will be omitted as appropriate.

[0025] The steps shown in Figures 3(a)-(b) are the same as those shown in Figures 2(a)-(b), and therefore will not be described.

[0026] In the step shown in FIG. 3(c), a film 114 is formed on the substrate 100. The film 114 is a film made of an inorganic material. In this example of the film forming method, the film 110 and the film 114 are formed using a common mask, but the two are formed at different positions on the substrate 100. Specifically, the film 114 is not formed in at least a part of the region where the film 110 is formed, or at least a part of the film 114 is formed in the region where the film 110 is not formed, or both of them. With this configuration, the step of adjusting the positions of the substrate 100 and the mask 102 can be omitted between the two film forming steps. Therefore, the process can be simplified.

[0027] A method for forming the film 110 and the film 114 at different positions will be specifically described.

[0028] (1) First, the film formation method can be changed. Film 110 is formed using one of deposition, sputtering, CVD, PVD, ADL, and liquid application, while film 114 is formed using another of the above methods. These methods have different degrees of wraparound around the opening of mask 102. Therefore, by using any two different film formation methods, film 110 and film 114 are formed at different positions on substrate 100 even when the films are formed through a common mask. Film formation methods other than those mentioned above may also be used.

[0029] 3, when the substrate 100 and the mask 102 are arranged with a gap therebetween, in a method in which the material advances in a highly linear manner, the material adheres and deposits in a range that is approximately the same as the region in which the opening is projected. In contrast, in a method in which the material advances in a less linear manner, the material is more likely to diffuse, and a film is formed that extends beyond the region in which the opening is projected.

[0030] For example, when the film 114 is formed over a wider area than the film 110, the film 110 can be formed by deposition, and the film 114 can be formed by sputtering. In film formation by sputtering, the wraparound of the material tends to be greater than in the case of deposition. Therefore, the film 114 can be formed over a wider area than the film 110. As another example of forming the film 114 over a wider area than the film 110, the film 110 can be formed by deposition, and the film 114 can be formed by CVD. In film formation by CVD, the wraparound of the material tends to be greater than in the case of deposition. Similarly, the film 110 can be formed by deposition, and the film 114 can be formed by ADL. In film formation by ADL, the wraparound of the material tends to be greater than in the case of deposition. In these examples, deposition is taken as an example of a method with high straightness of the material. However, the straightness of the material is relative, and a film formation method other than deposition may be used to form the film 110.

[0031] Even if the substrate 100 and the mask 102 are in close contact with each other, the material of the film 110 that is deposited first tends to penetrate between the substrate 100 and the mask 102, so that the films 110 and 114 are formed at different positions on the substrate 100.

[0032] (2) Alternatively, a single deposition method can be used while varying various deposition parameters, such as the pressure in the chamber, the substrate temperature, the temperature around the substrate, and the amount of material released.

[0033] For example, when both the film 110 and the film 114 are formed by deposition, the pressure (degree of vacuum in the vacuum chamber) can be changed. The higher the pressure in the chamber, in other words, the lower the degree of vacuum, the smaller the mean free path of the material in the gaseous state. In other words, the material is more likely to diffuse. Therefore, by performing deposition at a higher pressure, the film can be formed over a wider area. As a specific example, if the film 110 is formed by deposition in a chamber with a pressure of about 10-5 Pa and the film 114 is formed by deposition in a chamber with a pressure of about 10-3 Pa, the film 114 is formed over a wider area than the film 110. It should be noted that which of the film 110 and the film 114 is formed over a wider area is appropriately selected depending on the application of the film formation.

[0034] Of course, different film formation methods may be performed under different conditions for the formation of film 110 and the formation of film 114. As a specific example, film 110 is formed by deposition in a chamber with a pressure of about 10 Pa, and film 110 is formed by sputtering in a chamber with a pressure of about 10 Pa. In this example, film 114 can be formed over an even wider area.

[0035] When CVD is performed at atmospheric pressure, the degree of diffusion of the material also differs depending on the temperature in the chamber. Therefore, by forming the films at different temperatures, the films 110 and 114 can be formed in different regions. By appropriately changing the conditions for other parameters and forming the films, the films 110 and 114 can be formed in different regions.

[0036] (3) Even if the same film formation method is used under the same conditions for forming the films 110 and 114, the films 110 and 114 can be formed in different regions by using materials with different mean free paths. The mean free path can be reduced by using a material with a large molecular weight. For example, if it is desired to form the metal film 114 over a wider area, it is better to use a material with a large atomic number, such as silver or gold, rather than aluminum or magnesium.

[0037] So far, an example has been described in which the film 114 is formed in a wider area than the film 110. By switching the above-mentioned methods, the film 114 can be formed in a narrower area than the film 110.

[0038] According to the method described above, the film 110 and the film 114 are formed through a common mask, but are formed at different positions on the substrate 100. This configuration makes it possible to accommodate the formation of films for a wider range of applications.

[0039] <Electronic device manufacturing method> Next, an example will be described in which the above-described film formation method is applied to the manufacture of light-emitting elements to be mounted on organic EL display devices, etc. Note that the film formation method described below can also be applied to film formation applications other than the manufacture of light-emitting elements.

[0040] First, the light emitting device to be manufactured will be described with reference to FIG. 4. FIG. 4(a) shows a schematic cross-sectional structure of the light emitting device. FIG. 4(b) shows a schematic planar structure of the light emitting device. Parts having the same functions as those in FIG. 1 to FIG. 3 are given the same reference numerals as those in those figures. The description of parts having the same functions as those in FIG. 1 to FIG. 3 may be omitted because it overlaps with the previous description.

[0041] The substrate 100 is a glass substrate on which a TFT (Thin Film Transistor) is formed. Alternatively, the substrate 100 may be a silicon wafer on which a semiconductor element is formed. Although the substrate 100 is simplified in the figure, a plurality of films and elements are formed on the substrate 100 in a previous process. The anode electrode 401 and the cathode contact 403 are both made of a metal material such as tungsten or aluminum. When the anode electrode 401 and the cathode contact 403 are made of the same material, they can be formed in the same patterning process. The material of the anode electrode 401 and the material of the cathode contact 403 may be different. The cathode contact 403 is connected to the cathode electrode 409. One or more layers of organic films (films made of organic materials) including a light-emitting layer 407 are formed between the anode electrode 401 and the cathode electrode 409. With this configuration, a current is injected into the light-emitting layer 407, and the light-emitting material in the light-emitting layer 407 can emit light. The bank 403 electrically insulates the light-emitting elements from each other or from the anode electrode 401 and cathode electrode 409 of the light-emitting elements.

[0042] The light-emitting layer 407 includes a host material and a dopant material, both of which are known organic materials. In this embodiment, the light-emitting layer 407 is formed so as to be in contact with the anode electrode 401. On the other hand, the light-emitting layer 407 is spaced apart from the cathode contact 403. A film-forming method and conditions used therein are selected so that the light-emitting layer 407 is formed at such a position. For example, when performing deposition, it is preferable to use a lower pressure (higher vacuum) to increase the linearity of the material. This allows the light-emitting layer 407 to be formed in the area where the shape of the opening of the mask 102 is projected. The deposition material may get between the mask 102 and the substrate 100, so that the light-emitting layer 407 may also be formed outside the projection of the opening of the mask 102. To deal with such a wraparound of the deposition material, it is possible to increase the width of the bank 405, or the like.

[0043] If necessary, one or more organic layers may be formed in addition to the light-emitting layer 407. In a typical light-emitting element, an electron injection layer, an electron transport layer, a hole transport layer, a hole injection layer, etc. are formed. These layers are formed by deposition through a mask 102, similar to the light-emitting layer 102.

[0044] The cathode electrode 409 is a metal film. The cathode electrode 409 is made of magnesium, silver, gold, aluminum, tantalum, tungsten, molybdenum, nickel, or an alloy containing at least one of these. In this embodiment, the cathode electrode 409 is also formed outside the region where the opening of the mask 102 is projected. In detail, the cathode electrode 409 is first formed at a position that covers the light-emitting layer 407. Then, the cathode electrode 409 extends so as to contact the cathode contact 403. As can be seen from the figure, the cathode contact 403 is located outside the region where the opening of the mask 102 is projected. While using the mask 102 common to the light-emitting layer 407, the cathode electrode 409 is formed at a position different from that of the light-emitting layer 407, so that the cathode electrode 409 can be connected to the cathode contact 403.

[0045] The light-emitting element of this embodiment includes a plurality of pixels that emit light of different wavelengths. Specifically, the light-emitting layer 407R emits red light, the light-emitting layer 407G emits green light, and the light-emitting layer 407B emits blue light. With this configuration, a so-called RGB display can be configured. In addition to these color pixels, the light-emitting element may further include a pixel that emits white light. Alternatively, the light-emitting element may only include pixels of one or two colors.

[0046] In the light-emitting element of this embodiment, a passivation film 411 is formed so as to cover the bank 405 and the cathode electrode 409. The passivation film 411 is made of silicon nitride. The passivation film protects the organic layers and electrode layers formed thereunder by reducing the penetration of moisture into these layers and by suppressing reactions to these layers during the manufacturing process. A resin layer 413 and a protective film 415 are formed on the passivation film 411.

[0047] 4(b), blue light-emitting layer 407B has the largest area in a plane. Next, green light-emitting layer 407G has the second largest area. Red light-emitting layer 407R has the smallest area. The relationship between these areas can be changed as appropriate depending on the luminous efficiency of light-emitting layer 407 of each color.

[0048] Next, the film forming method of this embodiment will be described with reference to Figures 5 to 9. The film forming method of this embodiment differs from the first and second embodiments in that a mask is formed using a photolithography method. For simplification, the reference numerals of the same parts as those in the configuration shown in Figure 4 are omitted as appropriate in the subsequent drawings.

[0049] 5(a), a passivation film 411 is formed on the substrate 100. In this embodiment, the passivation film 411 is formed by CVD. The passivation film 411 covers the anode electrode 401, the cathode contact 403, and the bank 405. The passivation film 411 is formed on the entire surface of the substrate 100.

[0050] 5(b), a resist 701 for photolithography is applied to the substrate 100. After the resist is applied, drying and baking processes are performed as necessary.

[0051] 5(c), photolithography is performed to expose a part of the resist 701 (exposed portion 701a). Since a positive resist 701 is used here, the exposed portion 701a is removed in a later development process. If a negative resist is used, the exposed portion and the non-exposed portion can be interchanged.

[0052] In the step shown in Fig. 6(a), the exposed resist 701 is developed. The exposed portion 701a is removed by the development. Here, the portion of the resist 701 that is removed is the portion above the anode electrode 401 of one of the three color pixels. The anode electrodes 401 of the other two of the three color pixels remain covered with the resist 701 even after development. In addition, the resist 701 after development covers the cathode contact 403.

[0053] In the step shown in FIG. 6(b), the passivation film 411 is etched. In the etching of the passivation film 411, the resist 701 is used as a mask. That is, the part of the passivation film 411 that is not covered by the resist 701 is removed by etching. As a result, the anode electrode 401 is exposed. Furthermore, in this embodiment, a part of the passivation film 411 that was covered by the resist 701 is removed by performing etching that is nearly isotropic. As a result, after etching, the resist 701 protrudes from the passivation film 411 in the planar direction. As the resist 701 overhangs, the passivation film 411 exposes the cathode contact 403. That is, when viewed from above, the cathode contact 403 is covered by the resist 701, but is not covered by the passivation film 411. With this configuration, when the light-emitting layer 407 and the cathode electrode 409 are formed using the resist 701 as a common mask, the light-emitting layer 407 does not come into contact with the cathode contact 403, while the cathode electrode 409 comes into contact with the cathode contact 403. Note that the passivation film 411 remains covering the anode electrodes 401 and cathode contacts 403 of the other pixels.

[0054] 7(a), the light-emitting layer 407 is formed. In this embodiment, the light-emitting layer 407 is formed by vapor deposition. At this time, the resist 701 is used as a mask. The method is not limited to vapor deposition, and any method that provides a relatively high linearity of the material compared to the subsequent forming process of the cathode electrode 409 may be used for film formation. Preferably, the light-emitting layer 407 is formed in approximately the same area as the projection of the opening of the resist 701.

[0055] In the step shown in FIG. 7(b), the cathode electrode 409 is formed. In this embodiment, the cathode electrode 409 is formed by vapor deposition. At this time, the resist 701 is used as a mask. The deposition is not limited to vapor deposition, and any method that provides a relatively high material diffusion rate compared to the previous forming step of the light emitting layer 407 may be used. The cathode electrode 409 is formed in an area wider than the projection of the opening of the resist 701. As a result, the cathode electrode 409 is also formed on the cathode contact 403.

[0056] Specific methods for achieving this include, as described in the previous embodiment, (1) changing the film formation method, (2) changing various parameters in the film formation, and (3) using materials with different mean free paths.

[0057] In one example, the cathode electrode 409 is formed on the substrate 100 by deposition. The pressure in the chamber during deposition of the cathode electrode 409 is set higher than the pressure in the chamber during deposition of the light-emitting layer 407. In another example, the light-emitting layer 407 is formed by deposition, while the cathode electrode 409 is formed by sputtering. Alternatively, materials for the light-emitting layer 407 and the cathode electrode 409 may be selected such that the mean free path of the material for the light-emitting layer 407 is longer than the mean free path of the material for the cathode electrode 409 under the same conditions. When utilizing the difference in the mean free path of the materials, the film formation conditions for the two processes may be exactly the same.

[0058] By not performing alignment between the step of forming the light-emitting layer 407 and the step of forming the cathode electrode 409, throughput can be improved. However, in order to change the region in which the cathode electrode 409 is formed, a step of changing the relative position between the substrate 100 and the mask 102 or an alignment step may be included between the step of forming the light-emitting layer 407 and the step of forming the cathode electrode 409. When the cathode electrode 409 is not formed on a part of the light-emitting layer 407, it is effective to change the relative position between the substrate 100 and the mask 102.

[0059] The structure of the light-emitting element may be changed so as to facilitate the formation of the cathode electrode 409 over a wider range. In another example of a light-emitting element, the height of the bank 405a between the anode electrode 401 and the cathode contact 403 is lower than the height of the other banks 405. This reduces the degree of inhibition of material diffusion by the bank 405a, allowing the cathode electrode 409 to be formed over a wider range. A structure in which no bank is formed between the anode electrode 401 and the cathode contact 403 may also be used.

[0060] Here, the resist 701 has been described as being used as a mask. Under some conditions, the outer edge of the cathode electrode 409 may be defined by the passivation film 411. Therefore, in the process shown in FIG. 7(b), the resist 701 and the passivation film 411 may be considered to be used as a mask in an integrated manner.

[0061] In the step shown in Fig. 8(a), a passivation film 411a is formed by CVD. The passivation film 411a is formed so as to cover the cathode electrode 409 formed in the previous step. The passivation film 411a is preferably formed by the same method as the step of forming the passivation film 411 in Fig. 5(a). Hereinafter, the passivation film 411a formed in this step and the passivation film 411 formed in the previous step and remaining after etching will be collectively referred to as the passivation film 411.

[0062] In the step shown in FIG. 8(b), the resist 701 is peeled off from the substrate 100. The light-emitting layer 407 and the cathode electrode 409 formed on the resist 701 are lifted off. As a result, the passivation film 411 is exposed on the surface of the substrate 100. The portion of the passivation film 411 formed in the opening of the resist 701 may be a concave or convex portion relative to the other portions. Although the surface shape may differ in this way, the substrate 100 after the step of FIG. 8(b) is in the same state as the substrate 100 shown in FIG. 5(a).

[0063] Therefore, the steps from Fig. 5(b) to Fig. 8(b) are repeated for the pixels of other colors. Explanation of the repetition is omitted. As a result, as shown in Fig. 9(a), light-emitting layers 407R, 407G, and 407B of each color and cathode electrodes (reference numbers omitted) thereon are formed. In addition, the cathode electrodes of each pixel are covered with a passivation film 411.

[0064] 9(b), a resin layer 413 is formed. The resin layer 413 is formed for the purpose of planarization, etc. If appropriate, the resin layer 413 is omitted. Thereafter, a protective film 415 (see FIG. 4) is formed.

[0065] In this manner, in this embodiment, a plurality of different types of films are formed on a substrate using a single mask. With this configuration, it is possible to suppress the increase in size of the apparatus compared to the case where a production line is constructed for each type of film. Note that even when using the film forming method of this embodiment, a plurality of production lines may be constructed as necessary.

[0066] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0067] 100: substrate, 102: mask, 110: film, 112: film

Claims

1. A first mask forming step of forming a first mask patterned by photolithography; A first film forming step of forming a first light emitting layer on the substrate using the first mask; A first sealing step of forming a sealing film on the first light emitting layer; After the first sealing step, a second mask forming step of forming a second mask patterned by photolithography; A second film forming step of forming a second light emitting layer on the substrate using the second mask, and In the first film forming step, film formation is performed by a method with relatively high straightness of the material with respect to the second film forming step, In the second film forming step, film formation is performed by a method with relatively high diffusivity of the material with respect to the first film forming step A method for manufacturing an electronic device, characterized in that.

2. Before the first mask forming step, a step of forming an anode electrode and a cathode contact portion included in the pixels of the first light emitting layer; Before the first mask forming step, a step of forming an anode electrode and a cathode contact portion included in the pixels of the second light emitting layer; Before the first mask forming step, a step of forming a passivation film covering the anode electrode and the cathode contact portion of the pixels of the first light emitting layer, and the anode electrode and the cathode contact portion of the pixels of the second light emitting layer; An etching step of etching the passivation film using the first mask; Having A method for manufacturing an electronic device according to claim 1, characterized in that.

3. With respect to the etched passivation film, the first mask protrudes in the planar direction, The first mask exposes at least a part of the anode electrode of the pixels of the first light emitting layer and covers the cathode contact portion of the pixels of the first light emitting layer, The etched passivation film exposes both at least a part of the anode electrode of the pixels of the first light emitting layer and the cathode contact portion of the pixels of the first light emitting layer. A method for manufacturing an electronic device according to claim 2, characterized in that.

4. The first light emitting layer is in contact with the anode electrode and is separated from the cathode contact portion A method for manufacturing an electronic device according to claim 3, characterized in that.

5. Having a third film forming step of forming a cathode electrode of the pixels of the first light emitting layer using the first mask, The cathode electrode is in contact with the cathode contact portion The method of manufacturing an electronic device according to claim 4, characterized by the above.

6. After the first sealing step and before the second mask forming step, there is a removing step of removing a part of the sealing film formed in the first sealing step by removing the first mask. The method of manufacturing an electronic device according to claim 1, characterized by the above.

7. A first mask forming step of forming a first mask patterned by photolithography; A first film forming step of forming a first film on the substrate using the first mask; A first sealing step of forming a sealing film on the first film; After the first sealing step, a second mask forming step of forming a second mask patterned by photolithography; A second film forming step of forming a second film on the substrate using the second mask, and In the first film forming step, film formation is performed by a method with relatively high straightness of the material with respect to the second film forming step, In the second film forming step, film formation is performed by a method with relatively high diffusibility of the material with respect to the first film forming step. The film forming method is characterized by the above.

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