Method for manufacturing semiconductor device, light absorbing laminate, and temporary fixing laminate

Abstract

To provide a method for manufacturing a semiconductor device including a step of processing a semiconductor member temporarily fixed to a support member, which can easily separate the processed semiconductor member from the support member by a simple process.SOLUTION: A method for manufacturing the semiconductor device includes a step of processing the semiconductor member temporarily fixed to a support member via a temporary fixing material layer, and a step of irradiating a temporary fixing laminate with incoherent light from a support member side, and thereby separating the semiconductor member from the support member, in this order. A part or the whole of the temporary fixing material layer is a light absorbing layer which absorbs light to generate heat. The transmittance of the support member to the incoherent light is 90% or more. The transmittance of the temporary fixing material layer to incoherent light is 3.1% or less.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing a semiconductor device, a light absorbing laminate, and a temporary fixing laminate. [Background technology]

[0002] In the manufacture of semiconductor elements, after an integrated circuit is incorporated into a semiconductor member such as a semiconductor wafer, the semiconductor member may be processed. The semiconductor member is subjected to processing such as back grinding or dicing. The semiconductor member is usually processed while temporarily fixed to a support member, and then the semiconductor member is separated from the support member. For example, Patent Document 1 discloses a method for separating a semiconductor member from a support member, in which the semiconductor member is temporarily fixed to the support member via a temporary fixing material layer, and the semiconductor member is physically separated from the support member while being heated after processing. Patent Documents 2 and 3 disclose a method for separating a semiconductor member from a support member by irradiating a laser onto the temporary fixing material layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-126803 A [Patent Document 2] JP 2016-138182 A [Patent Document 3] JP 2013-033814 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present invention relates to a method for manufacturing a semiconductor device, which includes a step of processing a semiconductor member temporarily fixed to a support member, and provides a method by which the processed semiconductor member can be easily separated from the support member by a simple process. [Means for solving the problem]

[0005] A method for manufacturing a semiconductor device according to one aspect of the present invention includes the steps of: A step of preparing a temporary fixing laminate including a support member and a temporary fixing material layer provided on the support member, the temporary fixing material layer having a curable resin layer including at least one outermost surface of the temporary fixing material layer; a step of temporarily fixing a semiconductor member having a semiconductor substrate and a rewiring layer provided on one surface side of the semiconductor substrate to the support member via the temporary fixing material layer in an orientation in which the rewiring layer is located on the curable resin layer side; A step of processing the semiconductor member temporarily fixed to the support member; a step of irradiating the temporary fixing laminate with incoherent light from the support member side, thereby separating the semiconductor member from the support member; are provided in this order. The temporary fixing material layer has a light absorbing layer that absorbs light and generates heat. The light absorbing layer is provided as a part of the curable resin layer or as a layer separate from the curable resin layer. The support member has a transmittance of 90% or more for the incoherent light. The temporary fixing material layer has a transmittance of 3.1% or less for the incoherent light.

[0006] According to the above method, the semiconductor member after processing can be easily separated from the support member by the simple process of irradiating incoherent light. Irradiation of incoherent light can be easily performed because it is easier to secure a large irradiation area compared to irradiation of a laser, which is coherent light. By including a combination of a support member and a light absorbing layer having a specific transmittance in the temporary fixing material layer, the semiconductor member can be easily separated from the support member even by irradiation of incoherent light. Effect of the Invention

[0007] According to the present invention, there is provided a method for manufacturing a semiconductor device, which includes a step of processing a semiconductor member temporarily fixed to a support member, and which allows the processed semiconductor member to be easily separated from the support member by a simple process. The method of the present invention allows the processed semiconductor member to be easily separated from the support member even with incoherent light having a relatively small amount of energy. By using incoherent light having a small amount of energy, damage to fine structures such as the rewiring layer of the semiconductor member can be suppressed. [Brief description of the drawings]

[0008] [Figure 1] 1(a), (b), and (c) are schematic diagrams showing one embodiment of a method for manufacturing a semiconductor device. [Diagram 2] FIG. 2 is a schematic diagram showing one embodiment of a light absorbing laminate. [Diagram 3] 1(a) and 1(b) are schematic diagrams showing one embodiment of a method for manufacturing a semiconductor device. [Figure 4] 1(a) and 1(b) are schematic diagrams showing one embodiment of a method for manufacturing a semiconductor device. [Diagram 5] 1(a), (b), and (c) are schematic diagrams showing one embodiment of a method for manufacturing a semiconductor device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, several embodiments of the present invention will be described in detail. However, the present invention is not limited to the following embodiments.

[0010] The sizes of components in each drawing referred to in this specification are conceptual, and the relative relationship of the sizes between the components is not limited to those shown in each drawing. Duplicate explanations may be omitted.

[0011] The numerical values ​​and their ranges in this specification do not limit the scope of the present invention. In this specification, the numerical range indicated using "~" indicates a range including the numerical values ​​before and after "~" as the minimum and maximum values, respectively. In the numerical ranges described in stages in this specification, the upper limit or lower limit value described in one numerical range may be replaced with the upper limit or lower limit value of another numerical range described in stages. In the numerical ranges described in this specification, the upper limit or lower limit value of the numerical range may be replaced with the value shown in the examples.

[0012] In this specification, (meth)acrylic acid means acrylic acid or its corresponding methacrylic acid, and the same applies to other similar expressions such as (meth)acrylate and (meth)acryloyl group.

[0013] In order to manufacture a semiconductor device, a temporary fixing laminate is prepared for temporarily fixing a semiconductor member to a support member during processing of the semiconductor member. FIG. 1 is a cross-sectional view showing some embodiments of the temporary fixing laminate. The temporary fixing laminate 1 shown in FIG. 1 has a support member 10 and a temporary fixing material layer 30 provided on the support member 10. The temporary fixing material layer 30 has a curable resin layer 31. The curable resin layer 31 includes the outermost surface S of the temporary fixing material layer 30 on the side opposite to the support member 10. In addition, the temporary fixing material layer 30 has a light absorbing layer 32 provided as a layer separate from the curable resin layer 31, or a light absorbing layer 31B provided as a part of the curable resin layer 31. The light absorbing layers 32 and 31B are layers that absorb light and generate heat.

[0014] 1(a) includes a curable resin layer 31 including an outermost surface S on the side opposite to the support member 10, and a light absorbing layer 32 provided as a layer separate from the curable resin layer 31. In other words, the light absorbing layer 32 and the curable resin layer 31 are laminated in this order on the support member 10.

[0015] 1(b), the temporary fixing material layer 30 of the temporary fixing laminate 1 is made of a curable resin layer 31 including a light absorbing layer 31B as a part thereof. The curable resin layer 31 here has a light absorbing layer 31B including an outermost surface S, and a substantially non-heat-generating curable resin layer 31A provided on the support member 10 side of the light absorbing layer 31B.

[0016] 1(c), in addition to the light absorbing layer 31B similar to that in FIG. 1(b), a light absorbing layer 32 is further provided as a layer separate from the curable resin layer 31. Instead of the light absorbing layer 32 provided as a layer separate from the curable resin layer 31, a light absorbing layer constituting a part of the curable resin layer 31 may be further provided between the curable resin layer 31A and the support member 10.

[0017] The temporary fixing laminate 1 can be obtained, for example, by sequentially forming each layer on a support member 10. A laminate film having a curable resin layer and a light absorbing layer may be prepared and laminated on the support member 10. A light absorbing laminate illustrated in FIG. 2 may be prepared and used to obtain the temporary fixing laminate 1. The light absorbing laminate 3 illustrated in FIG. 2 has a support member 10 and a light absorbing layer 32 provided on the support member 10. The light absorbing layer 32 may be a metal layer adjacent to the support member 10. The transmittance of the metal layer as the light absorbing layer 32 with respect to the incoherent light irradiated from a xenon lamp may be 3.1% or less, 3.0% or less, 2.5% or less, or 1.5% or less, or may be 0% or more. The temporary fixing laminate 1 in FIG. 1 can also be regarded as a laminate composed of a light absorbing laminate and a curable resin layer. For example, the temporary fixing laminate 1 in FIG. 1 can be produced by a method including a step of forming a curable resin layer 32 on the light absorbing layer 32 of the light absorbing laminate 3 .

[0018] 3, 4, and 5 are process diagrams showing an embodiment of a method for manufacturing a semiconductor device using a temporary fixing laminate. Here, a method using the temporary fixing laminate 1 of FIG. 1(a) is exemplified, but a semiconductor device can be similarly manufactured using a temporary fixing laminate of another configuration. The method shown in FIGS. 3 to 5 includes a step of temporarily fixing a semiconductor member 45 to a support member 10 via a temporary fixing material layer 30 (FIG. 3), a step of processing the semiconductor member 45 temporarily fixed to the support member 10 (FIG. 4(a)), a step of forming a sealing layer 50 that seals the processed semiconductor member 45 (FIG. 4(b)), and a step of irradiating the temporary fixing laminate 1 with incoherent light A from the support member 10 side, thereby separating the semiconductor member 45 from the support member 10 (FIG. 4(b)). The semiconductor member 45 has a semiconductor substrate 40 and a rewiring layer 41 provided on one surface side of the semiconductor substrate 40. The semiconductor member 45 is disposed on the curable resin layer 31 with the rewiring layer 41 facing the curable resin layer 31. The step of temporarily fixing the semiconductor member 45 to the support member 10 via the temporary fixing material layer 30 may include disposing the semiconductor member 45 on the curable resin layer 31 with the rewiring layer 41 facing the curable resin layer 31, and curing the curable resin layer 31.

[0019] The support member 10 and the temporary fixing material layer 30 constituting the temporary fixing laminate 1 have a specific transmittance for incoherent light irradiated to the temporary fixing laminate 1. The transmittance of the support member 10 for incoherent light is 90% or more. The transmittance of the temporary fixing material layer 30 for incoherent light is 3.1% or less. Since the transmittance of the support member 10 is high and the transmittance of the temporary fixing material layer 30 is low, the semiconductor member 45 can be easily separated from the support member 10 even when irradiated with incoherent light of a low energy amount. If the energy amount of incoherent light is low, the rewiring layer 41 of the semiconductor member 45 or other peripheral members are unlikely to be damaged by light irradiation. From the same viewpoint, the transmittance of the support member 10 for incoherent light may be 60% or more, or 70% or more, or may be 100% or less. The transmittance of the temporary fixing material layer 30 to incoherent light may be 3.0% or less, 2.5% or less, or 1.5% or less, or may be 0% or more.

[0020] The support member 10 is a plate-like body that has high transmittance and can withstand the load applied during processing of the semiconductor member 45. Examples of the support member 10 include an inorganic glass substrate and a transparent resin substrate.

[0021] The thickness of the support member 10 may be, for example, 0.1 to 2.0 mm. If the thickness of the support member 10 is 0.1 mm or more, handling tends to be easy. If the thickness of the support member 10 is 2.0 mm or less, material costs tend to be reduced.

[0022] The outermost surface S of the temporary fixing material layer 30 on which the semiconductor member 45 is temporarily fixed is the surface of the curable resin layer 31. For example, the semiconductor member 45 can be temporarily fixed to the support member 10 by curing the curable resin layer 31 in a state in which the semiconductor member 45 is placed on the curable resin layer 31. In other words, the semiconductor member 45 can be temporarily adhered to the support member 10 via the temporary fixing material layer 30 having the cured curable resin layer 31c.

[0023] The light absorbing layer 32 is a layer that absorbs light and generates heat. By providing the light absorbing layer 32, the temporary fixing material layer 30 can easily have a low transmittance.

[0024] The curable resin layer 31 is a layer containing a curable resin composition that is cured by heat or light. The curable resin layer 31 before curing has a degree of adhesiveness that allows the semiconductor member 45 to be attached by pressure bonding or the like. The cured curable resin layer 31c holds the semiconductor member 45 while the semiconductor member 45 is being processed. In this specification, all components other than the conductive particles that constitute the curable resin layer 31 are considered to be components of the curable resin composition.

[0025] From the viewpoint of stress relaxation, the thickness of the curable resin layer 31 may be, for example, 50 μm or less, 40 μm or less, or 30 μm or less and 0.1 μm or more, or 50 μm or less, 40 μm or less, or 30 μm or less and 1 μm or more.

[0026] The storage modulus of the cured curable resin layer 31c at 25°C may be 5 to 100 MPa. When the storage modulus of the cured curable resin layer 31c at 25°C is 5 MPa or more, the support member 10 is likely to hold the semiconductor member 45 without bending. In addition, when the semiconductor member 45 is separated from the support member, the curable resin layer 31c is unlikely to leave a residue on the semiconductor member 45. When the storage modulus of the cured curable resin layer 31c at 25°C is 100 MPa or less, displacement of the semiconductor member 45 tends to be reduced. From the same viewpoint, the storage modulus of the cured curable resin layer 31c at 25°C may be 5.5MPa or more, 6MPa or more, or 6.3MPa or more and 100MPa or less, 5.5MPa or more, 6MPa or more, or 6.3MPa or more and 90MPa or less, 5.5MPa or more, 6MPa or more, or 6.3MPa or more and 80MPa or less, 5.5MPa or more, 6MPa or more, or 6.3MPa or more and 70MPa or less, or 5.5MPa or more, 6MPa or more, or 6.3MPa or more and 65MPa or less. In this specification, the storage modulus of the cured curable resin layer 31c means a value obtained by viscoelasticity measurement measured under conditions of a temperature rise rate of 5°C / min, a frequency of 1Hz, and a tensile mode.

[0027] The storage modulus of the cured curable resin layer 31c at 25°C can be increased, for example, by increasing the content of the hydrocarbon resin described below, by applying a hydrocarbon resin having a high Tg, or by adding an insulating filler to the curable resin composition.

[0028] The storage modulus of the cured curable resin layer 31c at 250°C may be 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 2.00 MPa or less, or 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 2.00 MPa or less, or 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 1.90 MPa or less, or 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 1.80 MPa or less, or 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 1.75 MPa or less.

[0029] The curable resin composition constituting the curable resin layer 31 may contain a thermosetting resin and a hydrocarbon resin. The hydrocarbon resin is a resin whose main skeleton is composed of a hydrocarbon. When the curable resin composition contains a hydrocarbon resin, the semiconductor member 45 can be easily attached to the curable resin layer 31 at a low temperature.

[0030] From the viewpoint of low-temperature application property of the curable resin layer 31, the glass transition temperature (Tg) of the hydrocarbon resin may be 50° C. or lower. From the viewpoint of good releasability of the curable resin layer 31, the Tg of the hydrocarbon resin may be −100° C. or higher, or −50° C. or higher.

[0031] The Tg of a hydrocarbon resin is a midpoint glass transition temperature obtained by differential scanning calorimetry (DSC). Specifically, the Tg of a hydrocarbon resin is a midpoint glass transition temperature calculated by a method in accordance with JIS K 7121 after measuring the change in heat quantity under conditions of a temperature rise rate of 10°C / min and a measurement temperature of -80 to 80°C.

[0032] The hydrocarbon resin includes at least one selected from the group consisting of, for example, ethylene-propylene copolymer, ethylene-1-butene copolymer, ethylene-propylene-1-butene copolymer elastomer, ethylene-1-hexene copolymer, ethylene-1-octene copolymer, ethylene-styrene copolymer, ethylene-norbornene copolymer, propylene-1-butene copolymer, ethylene-propylene-non-conjugated diene copolymer, ethylene-1-butene-non-conjugated diene copolymer, ethylene-propylene-1-butene-non-conjugated diene copolymer, polyisoprene, polybutadiene, styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), styrene-ethylene-butylene-styrene block copolymer (SEBS), styrene-ethylene-propylene-styrene block copolymer (SEPS), and hydrogenated products thereof. These hydrocarbon resins may have a carboxyl group. The carboxyl group is introduced by modification using, for example, maleic anhydride or the like. The hydrocarbon resin may include a styrene-based resin including monomer units derived from styrene. The styrene-based resin may be a styrene-ethylene-butylene-styrene block copolymer (SEBS).

[0033] The weight-average molecular weight (Mw) of the hydrocarbon resin may be 10,000 to 5,000,000 or 100,000 to 2,000,000. When the weight-average molecular weight is 10,000 or more, the heat resistance of the temporary fixing material layer 30 tends to be easily ensured. When the weight-average molecular weight is 5,000,000 or less, the decrease in flow and adhesion of the temporary fixing material layer 30 tends to be easily suppressed. The weight-average molecular weight here is a polystyrene-equivalent value obtained by using a calibration curve of standard polystyrene in gel permeation chromatography (GPC).

[0034] The content of the hydrocarbon resin may be 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 90 parts by mass or less, or 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 85 parts by mass or less, or 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 80 parts by mass or less, relative to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31. When the content of the hydrocarbon resin is within these numerical ranges, a thin and flat curable resin layer 31 tends to be easily formed. In addition, the curable resin layer 31 tends to have good adhesion at low temperatures and an appropriate storage modulus after curing.

[0035] The thermosetting resin is a component that cures the curable resin composition by a thermosetting reaction. The thermosetting reaction can be a reaction between a thermosetting resin and a curing agent, self-polymerization of the thermosetting resin, or a combination thereof. Examples of the thermosetting resin include epoxy resin, acrylic resin, silicone resin, phenolic resin, thermosetting polyimide resin, polyurethane resin, melamine resin, and urea resin. These may be used alone or in combination of two or more. The thermosetting resin may contain an epoxy resin because it is more excellent in heat resistance, workability, and reliability.

[0036] An epoxy resin is a compound having one or more epoxy groups. An epoxy resin may have two or more epoxy groups. Examples of epoxy resins having two or more epoxy groups include bisphenol A type epoxy resins, novolac type epoxy resins (phenol novolac type epoxy resins, etc.), glycidylamine type epoxy resins, heterocycle-containing epoxy resins, and alicyclic epoxy resins.

[0037] The curable resin composition may contain a thermosetting resin and a curing agent thereof. The total content of the thermosetting resin and the curing agent thereof may be 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 60 parts by mass or less, or 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 50 parts by mass or less, or 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 40 parts by mass or less, relative to 100 parts by mass of the total mass of the curable resin composition. When the total content of the thermosetting resin and the curing agent thereof is within these ranges, a thin and flat curable resin layer tends to be easily formed, and the heat resistance of the cured curable resin layer 31c tends to be more excellent.

[0038] When an epoxy resin is used as the thermosetting resin, the curable resin composition may contain a curing agent for the epoxy resin. The curing agent for the epoxy resin is not particularly limited, but examples thereof include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenols (such as bisphenol A, bisphenol F, and bisphenol S), and phenolic resins (such as phenol novolac resins, bisphenol A novolac resins, cresol novolac resins, and phenol aralkyl resins).

[0039] The thermosetting resin composition may further contain a curing accelerator that accelerates the curing reaction of a thermosetting resin such as an epoxy resin. Examples of the curing accelerator include imidazole compounds, dicyandiamide, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate. These may be used alone or in combination of two or more.

[0040] The content of the curing accelerator may be 0.01 to 5 parts by mass relative to 100 parts by mass of the total amount of the thermosetting resin and the curing agent. When the content of the curing accelerator is within this range, the curability of the curable resin layer and the heat resistance after curing tend to be more excellent.

[0041] The curable resin composition constituting the curable resin layer 31 may contain a polymerizable monomer having a polymerizable unsaturated group and a polymerization initiator. In this case, the curable resin composition may further contain the above-mentioned hydrocarbon resin.

[0042] The polymerizable monomer is a compound having a polymerizable unsaturated group such as an ethylenically unsaturated group. The polymerizable monomer may be monofunctional, bifunctional, or trifunctional or more, but from the viewpoint of obtaining sufficient curability, a bifunctional or more polymerizable monomer may be used. Examples of the polymerizable monomer include (meth)acrylate, vinylidene halide, vinyl ether, vinyl ester, vinylpyridine, vinylamide, and arylated vinyl. The polymerizable monomer may be (meth)acrylate or (meth)acrylic acid. The (meth)acrylate may be a monofunctional (meth)acrylate, a bifunctional (meth)acrylate, a trifunctional or more polyfunctional (meth)acrylate, or a combination thereof.

[0043] Examples of monofunctional (meth)acrylates include methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, and decyl (meth)acrylate. 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, and mono(2-(meth)acryloyloxyethyl)succinate, etc. aliphatic (meth)acrylates of the above; as well as benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxypolyethylene glycol (meth)acrylate, nonylphenoxy polyethylene glycol (meth)acrylate, phenoxy polypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, and aromatic (meth)acrylates such as 2-hydroxy-3-(2-naphthoxy)propyl (meth)acrylate.

[0044] Examples of bifunctional (meth)acrylates include ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, tetrapropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 1,3-butanediol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 3-methyl-1,5-pentanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 2-butyl-2-ethyl-1,3-propane Aliphatic (meth)acrylates such as diol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, glycerin di(meth)acrylate, tricyclodecane dimethanol (meth)acrylate, and ethoxylated 2-methyl-1,3-propanediol di(meth)acrylate; as well as ethoxylated bisphenol A di(meth)acrylate, propoxylated bisphenol A di(meth)acrylate, Examples of aromatic (meth)acrylates include ethoxylated propoxylated bisphenol A di(meth)acrylate, ethoxylated bisphenol F di(meth)acrylate, propoxylated bisphenol F di(meth)acrylate, ethoxylated propoxylated bisphenol F di(meth)acrylate, ethoxylated fluorene type di(meth)acrylate, propoxylated fluorene type di(meth)acrylate, and ethoxylated propoxylated fluorene type di(meth)acrylate.

[0045] Examples of the polyfunctional (meth)acrylate having three or more functional groups include trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, propoxylated trimethylolpropane tri(meth)acrylate, ethoxylated propoxylated trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, ethoxylated pentaerythritol tri(meth)acrylate, propoxylated pentaerythritol tri(meth)acrylate, ethoxylated propoxylated pentaerythritol tri(meth)acrylate, ... Aliphatic (meth)acrylates such as erythritol tetra(meth)acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, propoxylated pentaerythritol tetra(meth)acrylate, ethoxylated propoxylated pentaerythritol tetra(meth)acrylate, ditrimethylolpropane tetraacrylate, and dipentaerythritol hexa(meth)acrylate; and aromatic epoxy (meth)acrylates such as phenol novolac type epoxy (meth)acrylate and cresol novolac type epoxy (meth)acrylate.

[0046] These (meth)acrylates may be used alone or in combination of two or more thereof. These (meth)acrylates may be combined with other polymerizable monomers.

[0047] The content of the polymerizable monomer may be 10 to 60 parts by mass with respect to 100 parts by mass of the curable resin composition constituting the curable resin layer 31.

[0048] The polymerization initiator is a compound that initiates a polymerization reaction of a polymerizable monomer by heating or irradiation with ultraviolet light, etc. For example, when the polymerizable monomer is a compound having an ethylenically unsaturated group, the polymerization initiator may be a thermal radical polymerization initiator, a photoradical polymerization initiator, or a combination thereof.

[0049] Examples of the thermal radical polymerization initiator include diacyl peroxides such as octanoyl peroxide, lauroyl peroxide, stearyl peroxide, and benzoyl peroxide; t-butyl peroxypivalate, t-hexyl peroxypivalate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, 2,5-dimethyl-2,5-bis(2-ethylhexanoylperoxy)hexane, t-hexylperoxy-2-ethylhexanoate, t-butylperoxy-2-ethylhexanoate, t-butylperoxyisobutyrate, t-hexylperoxyisopropyl monocarbonate, and t-butylperoxyisopropyl per ... peroxyesters such as 2,5-dimethyl-2,5-bis(benzoylperoxy)hexane, t-butylperoxyacetate, etc.; and azo compounds such as 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'-azobis(4-methoxy-2'-dimethylvaleronitrile).

[0050] Examples of the photoradical polymerization initiator include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethan-1-one; α-hydroxyketones such as 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one; and phosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide.

[0051] These thermal and photoradical polymerization initiators may be used alone or in combination of two or more.

[0052] The content of the polymerization initiator may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total amount of the polymerizable monomers.

[0053] The curable resin composition constituting the curable resin layer 31 may further contain, as other components, an insulating filler, a sensitizer, an antioxidant, and the like.

[0054] The insulating filler is added to the curable resin composition for the purpose of imparting low thermal expansion and low moisture absorption. Examples of the insulating filler include non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramic. These insulating fillers may be used alone or in combination of two or more.

[0055] The content of the insulating filler may be 5 to 20 parts by mass with respect to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31. When the content of the insulating filler is within this numerical range, the cured curable resin layer 31c tends to have excellent heat resistance and good releasability.

[0056] Examples of the sensitizer include anthracene, phenanthrene, chrysene, benzopyrene, fluoranthene, rubrene, pyrene, xanthone, indanthrene, thioxanthen-9-one, 2-isopropyl-9H-thioxanthen-9-one, 4-isopropyl-9H-thioxanthen-9-one, and 1-chloro-4-propoxythioxanthone. The content of the sensitizer may be 0.01 to 10 parts by mass with respect to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31.

[0057] Examples of the antioxidant include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives such as 4-methoxyphenol and 4-t-butylcatechol, aminoxyl derivatives such as 2,2,6,6-tetramethylpiperidine-1-oxyl and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl, and hindered amine derivatives such as tetramethylpiperidyl methacrylate. The content of the antioxidant may be 0.1 to 10 parts by mass with respect to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31.

[0058] The curable resin layer 31 is provided on the light absorbing layer 32, for example, by preparing a laminated film having a support film and a curable resin layer formed on the support film in advance and attaching the laminated film to the light absorbing layer 32. The laminated film can be attached to the light absorbing layer 32 at room temperature (20°C) or while heating, using a roll laminator, vacuum laminator, or the like. The laminated film having the support film and the curable resin layer can be obtained, for example, by a method including coating the support film with a resin varnish containing a thermosetting resin or a polymerizable monomer, an organic solvent, and other components as necessary, and removing the organic solvent from the coating film. Alternatively, the curable resin layer 31 may be formed on the light absorbing layer 32 by a method of directly coating the light absorbing layer 32 with a similar resin varnish and removing the organic solvent from the coating film.

[0059] An example of the light absorbing layer 32 is a conductive layer including a conductor that absorbs light and generates heat. Examples of the conductor constituting the conductive layer as the light absorbing layer 32 include metals, metal oxides, and conductive carbon materials. The metals may be simple metals such as chromium, copper, titanium, silver, platinum, and gold, or alloys such as nickel-chromium, stainless steel, and copper-zinc. Examples of metal oxides include indium tin oxide (ITO), zinc oxide, and niobium oxide. These may be used alone or in combination of two or more. The conductor may be chromium, titanium, or a conductive carbon material.

[0060] The light absorbing layer 32 may be a metal layer consisting of a single layer or multiple layers. The metal layer tends to have a transmittance of 3.1% or less for incoherent light. For example, the light absorbing layer 32 may be a metal layer consisting of a copper layer and a titanium layer. The metal layer as the light absorbing layer 32 may be a layer formed by physical vapor deposition (PVD) such as vacuum deposition and sputtering, chemical vapor deposition (CVD) such as plasma-enhanced chemical vapor deposition, or a plating layer formed by electrolytic plating or electroless plating. By physical vapor deposition, even if the support member 10 has a large area, a metal layer as the light absorbing layer 32 that covers the surface of the support member 10 can be efficiently formed.

[0061] When the light absorbing layer 32 is a single metal layer, the light absorbing layer 32 may contain at least one metal selected from the group consisting of thallium (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), chromium (Cr), copper (Cu), aluminum (Al), silver (Ag), and gold (Au).

[0062] The light absorbing layer 32 may be composed of two layers, a first layer and a second layer, and the first layer and the second layer may be laminated in this order from the support member 10 side. In this case, for example, if the first layer has high light absorption and the second layer has a high thermal expansion coefficient and a high elastic modulus, particularly good peelability is likely to be obtained. From this viewpoint, for example, the first layer may contain at least one metal selected from the group consisting of thallium (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W) and chromium (Cr), and the second layer may contain at least one metal selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag) and gold (Au). The first layer may contain at least one metal selected from the group consisting of titanium (Ti), tungsten (W) and chromium (Cr), and the second layer may contain at least one metal selected from the group consisting of copper (Cu) and aluminum (Al).

[0063] Another example of the light absorbing layer is a layer containing conductive particles that absorb light and generate heat, and a binder resin in which the conductive particles are dispersed. The conductive particles may be particles containing the above-mentioned conductor. The binder resin may be a curable resin composition, in which case the light absorbing layer constitutes a part of the curable resin layer 31. For example, the light absorbing layer 31B in the temporary fixing laminate 1 of FIG. 1(b) can be a layer containing conductive particles and a curable resin composition. The curable resin composition constituting the light absorbing layer may contain the same components as the curable resin composition constituting the curable resin layer of the part other than the light absorbing layer. The curable resin composition constituting the light absorbing layer may be the same as or different from the curable resin composition constituting the curable resin layer of the part other than the light absorbing layer. The content of the conductive particles in the light absorbing layer may be 10 to 90 parts by mass relative to the total amount of the components other than the conductive particles in the light absorbing layer, that is, 100 parts by mass of the binder resin or the curable resin composition. When the content of the conductive particles is large, the light absorbing layer is likely to have a transmittance of 3.1% or less for incoherent light. From the viewpoint of the transmittance, the content of the conductive particles may be 20% by mass or more, or 30% by mass or more.

[0064] The light absorbing layer containing conductive particles and a binder resin can be formed by a method including, for example, applying a varnish containing conductive particles, a binder resin, and an organic solvent onto a support member or a curable resin layer, and removing the organic solvent from the coating. A prefabricated light absorbing layer 32 may be laminated onto the support member 10 or the curable resin layer. A laminate consisting of a light absorbing layer and a curable resin layer may be laminated onto the support member.

[0065] The thickness of the light absorbing layer 32 may be 1 to 5000 nm or 100 to 3000 nm from the viewpoint of easy peelability. When the thickness of the light absorbing layer 32 is 50 to 300 nm, the light absorbing layer 32 is likely to have a sufficiently low transmittance. When the light absorbing layer 32 is a metal layer consisting of a single layer or multiple layers, the thickness of the light absorbing layer 32 (or metal layer) may be 75 nm or more, 90 nm or more, or 100 nm or more, or 1000 nm or less, from the viewpoint of good peelability. In particular, when the light absorbing layer 32 is a single metal layer, the thickness of the light absorbing layer 32 (or metal layer) may be 100 nm or more, 125 nm or more, 150 nm or more, or 200 nm or more, or 1000 nm or less, from the viewpoint of good peelability. Even if the light absorbing layer 32 is a metal layer containing a metal with relatively low light absorption (e.g., Cu, Ni) or a metal layer containing a metal with a relatively low thermal expansion coefficient (e.g., Ti), better peelability tends to be obtained if the thickness is large.

[0066] The thickness of the temporary fixing material layer 30 (in the case of FIG. 1(a), the total thickness of the light absorbing layer 32 and the curable resin layer 31) may be 0.1 to 2000 μm or 10 to 500 μm from the viewpoint of stress relaxation.

[0067] After preparing the temporary fixing laminate 1, as shown in FIG. 3(a), an unprocessed semiconductor member 45 is placed on the curable resin layer 31. The semiconductor member 45 has a semiconductor substrate 40 and a rewiring layer 41. The semiconductor member 45 may further have an external connection terminal. The semiconductor substrate 40 may be a semiconductor wafer or a semiconductor chip obtained by dividing a semiconductor wafer. In the example of FIG. 3(a), a plurality of semiconductor members 45 are placed on the curable resin layer 31, but the number of semiconductor members may be one.

[0068] The thickness of the semiconductor member 45 may be 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm from the viewpoint of preventing cracks during transportation, processing, and the like, in addition to making the semiconductor device smaller and thinner.

[0069] The semiconductor member 45 placed on the curable resin layer 31 is pressure-bonded to the curable resin layer 31 using, for example, a vacuum press or a vacuum laminator. When using a vacuum press, the pressure-bonding conditions can be an atmospheric pressure of 1 hPa or less, a pressure-bonding pressure of 1 MPa, a pressure-bonding temperature of 120 to 200°C, and a holding time of 100 to 300 seconds. When using a vacuum laminator, the pressure-bonding conditions can be, for example, an atmospheric pressure of 1 hPa or less, a pressure-bonding temperature of 60 to 180°C or 80 to 150°C, a lamination pressure of 0.01 to 0.5 MPa or 0.1 to 0.5 MPa, and a holding time of 1 to 600 seconds or 30 to 300 seconds.

[0070] After the semiconductor member 45 is disposed on the curable resin layer 31, the curable resin layer 31 is thermally cured or photocured, whereby the semiconductor member 45 is temporarily fixed to the support member 10 via the temporary fixing material layer 30 having the cured curable resin layer 31c. The thermal curing conditions may be, for example, 300° C. or lower or 100 to 200° C., and 1 to 180 minutes or 1 to 60 minutes.

[0071] Next, as shown in Fig. 4(a), the semiconductor member temporarily fixed to the support member 10 is processed. Fig. 4(a) shows an example of processing including thinning of a semiconductor substrate. The processing of the semiconductor member is not limited thereto, and may include, for example, thinning of a semiconductor substrate, division (dicing) of a semiconductor member, formation of a through electrode, etching, plating reflow processing, sputtering processing, or a combination thereof.

[0072] The semiconductor substrate 40 is thinned by using a grinder or the like to grind the surface of the semiconductor substrate 40 opposite to the rewiring layer 41. The thinned semiconductor substrate 40 may have a thickness of, for example, 100 μm or less.

[0073] After processing the semiconductor member 45, as shown in FIG. 4(b), an encapsulation layer 50 is formed to encapsulate the processed semiconductor member 45. The encapsulation layer 50 can be formed using an encapsulant that is usually used for manufacturing semiconductor elements. For example, the encapsulation layer 50 may be formed from a thermosetting resin composition. The thermosetting resin composition used for the encapsulation layer 50 includes, for example, an epoxy resin such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, naphthol novolac epoxy resin, etc. The encapsulation layer 50 and the thermosetting resin composition for forming it may include additives such as a filler and / or a flame retardant.

[0074] The sealing layer 50 is formed using, for example, a solid material, a liquid material, a fine-particle material, or a sealing film. When a sealing film is used, a compression sealing molding machine, a vacuum laminating device, or the like is used. For example, using these devices, the semiconductor member 45 is covered with a sealing film that is thermally melted under conditions of 40 to 180°C (or 60 to 150°C), 0.1 to 10 MPa (or 0.5 to 8 MPa), and 0.5 to 10 minutes, to form the sealing layer 50. The thickness of the sealing film is adjusted so that the sealing layer 50 has a thickness equal to or greater than that of the semiconductor member 45 after processing. The thickness of the sealing film may be 50 to 2000 μm, 70 to 1500 μm, or 100 to 1000 μm.

[0075] After the sealing layer 50 is formed, the sealing layer 50 and the curable resin layer 31c may be divided into a plurality of parts, each including one semiconductor member 45, as shown in FIG. 5(a).

[0076] As shown in FIG. 5(b), the temporary fixing laminate 1 is irradiated with incoherent light A from the support member 10 side, thereby separating the semiconductor member 45 from the support member 10. By irradiating the incoherent light A, the light absorbing layer 32 absorbs the light and instantaneously generates heat. The generated heat may cause, for example, melting of the cured curable resin layer 31c, thermal stress occurring between the support member 10 and the semiconductor member 45, and scattering of the light absorbing layer 32. One or more of these phenomena may be the main cause, and the semiconductor member 45 may be easily separated from the support member 10. When the curable resin composition constituting the curable resin layer 31 contains a hydrocarbon resin and the storage modulus of the cured curable resin layer at 25° C. is 5 to 100 MPa, peeling tends to occur easily at the interface between the light absorbing layer 32 and the cured curable resin layer 31. This tendency is observed when the energy amount of the incoherent light A is 5 to 25 J / cm 2 In order to separate the semiconductor member 45 from the support member 10, a slight stress may be applied to the semiconductor member 45 in addition to the irradiation with the incoherent light A.

[0077] The incoherent light A is not coherent light, and is an electromagnetic wave having properties such as no interference fringes, low coherence, and low directivity. The longer the optical path length, the more incoherent light tends to attenuate. Laser light is generally coherent light, whereas sunlight, fluorescent light, and other light are incoherent light. Incoherent light can also be said to be light other than laser light. The irradiation area of ​​incoherent light is generally overwhelmingly larger than that of coherent light (i.e., laser light), so it is possible to reduce the number of irradiations. For example, a single irradiation can cause separation of multiple semiconductor members 45.

[0078] The incoherent light A may include infrared light. The incoherent light A may be pulsed light. The light source of the incoherent light A is not particularly limited, but may be a xenon lamp. A xenon lamp is a lamp that uses light emission by application and discharge in an arc tube filled with xenon gas. A xenon lamp discharges while repeating ionization and excitation, so it has a stable continuous wavelength from the ultraviolet light region to the infrared light region. Since a xenon lamp requires a short time to start up compared to lamps such as metal halide lamps, the time required for the process can be significantly reduced. In addition, since a high voltage needs to be applied to emit light, high heat is generated instantaneously, but the xenon lamp is also advantageous in that it requires a short cooling time and allows continuous work.

[0079] The irradiation conditions of the xenon lamp include the applied voltage, pulse width, irradiation time, irradiation distance (the distance between the light source and the temporary fixing material layer), irradiation energy, etc., and these can be set arbitrarily according to the number of irradiations, etc. From the viewpoint of reducing damage to the semiconductor member 45, the irradiation conditions may be set such that the semiconductor member 45 can be separated by one irradiation.

[0080] A part of the curable resin layer 31c may adhere to the separated semiconductor member 45 as a residue 31c'. The adhered residue 31c' is removed as shown in FIG. 5(c). The residue 31c' is removed, for example, by washing with a solvent. The solvent is not particularly limited, and examples thereof include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, and hexane. These may be used alone or in combination of two or more. In order to remove the residue 31c', the semiconductor member 45 may be immersed in a solvent or ultrasonically washed. The semiconductor member 45 may be heated at a low temperature of about 100° C. or less.

[0081] By the method exemplified above, a semiconductor element 60 including a processed semiconductor member 45 can be obtained. A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to another semiconductor element or a semiconductor element mounting board. EXAMPLES

[0082] The present invention will be described in more detail below with reference to examples, although the present invention is not limited to these examples.

[0083] (Study 1) 1-1. Curable resin layer A hydrogenated styrene-butadiene elastomer (product name: Dynaron 2324P, JSR Corporation) was dissolved in toluene to prepare an elastomer solution with a concentration of 40% by mass. A resin varnish was obtained by mixing the elastomer solution containing 80 parts by mass of hydrogenated styrene-butadiene elastomer with 20 parts by mass of 1,9-nonanediol diacrylate (product name: FA-129AS, Hitachi Chemical Co., Ltd.) and 1 part by mass of peroxyester (product name: Perhexa 25O, NOF Corporation).

[0084] The obtained resin varnish was applied to a release-treated surface of a polyethylene terephthalate (PET) film (Purex A31, Teijin DuPont Films Ltd., thickness: 38 μm) using a precision coater. The coating was dried by heating at 80° C. for 10 minutes to form a curable resin layer with a thickness of about 100 μm.

[0085] 1-2. Light absorption layer As support members, a slide glass, a frosted glass plate, and a silicon wafer each having a size of 40×40 mm were prepared. On each support member, a titanium layer and a copper layer were formed in that order by sputtering to form a two-layer light absorbing layer consisting of a titanium layer (thickness: 20 nm) and a copper layer (thickness: 200 nm). In the sputtering, after pretreatment by reverse sputtering, a titanium layer and a copper layer were formed by RF sputtering. The conditions for reverse sputtering (pretreatment) and RF sputtering are as follows: Reverse sputtering (pretreatment) ·Ar flow rate: 1.2×10 -2 Pa·m 3 / s(70sccm) ·RF power: 300W Time: 300 seconds RF sputtering ·Ar flow rate: 1.2×10 -2 Pa·m 3 / s(70sccm)

[0086] 1-3.Transmittance The transmittance of the support member and the light absorbing layer to the light irradiated from the xenon lamp was measured. The transmittance of the light absorbing layer can be regarded as the transmittance of the temporary fixing material layer. The transmittance was measured using the same xenon lamp as that used in the peel test described later and a spectroradiometer (USR-45, Ushio Inc.). The detection terminal of the spectroradiometer was placed at a position 5 cm away from the light irradiation part of the xenon lamp. The light irradiated from the xenon lamp was directly detected by the detection terminal, and the amount of light detected was taken as the baseline. Next, the measurement object was placed between the detection terminal of the spectroradiometer and the xenon lamp, and the transmitted light irradiated from the xenon lamp and transmitted through the measurement object was detected by the detection terminal. The ratio of the amount of light of the detected transmitted light to the baseline was taken as the transmittance. The transmittance regarding the total amount of light in the wavelength range of 300 to 800 nm was calculated by the following formula. Transmittance (%) = {(total amount of transmitted light with wavelengths of 300 to 800 nm) / (total amount of baseline light with wavelengths of 300 to 800 nm)} x 100 Regarding the light absorbing layer, the transmittance of the laminate having the support member and the light absorbing layer was measured by light from a xenon lamp arranged on the support member side. The amount of light incident on the light absorbing layer was calculated from the baseline and the transmittance of the support member, and the ratio of the amount of transmitted light to this was taken as the transmittance of the light absorbing layer.

[0087] 1-4. Peel test A curable resin layer cut to a size of 40 mm x 40 mm was placed on the light absorbing layer formed on each support member. The curable resin layer was attached to the light absorbing layer by vacuum lamination to obtain a temporary fixing laminate having a laminated structure of support member / light absorbing layer / curable resin layer. A semiconductor chip (size: 10 mm x 10 mm, thickness: 150 μm) was placed on the curable resin layer of the temporary fixing laminate. The curable resin layer was cured by heating at 180°C for 1 hour to obtain a test specimen for a peel test having a semiconductor chip temporarily fixed to the support member.

[0088] Each test specimen was irradiated with pulsed light from a xenon lamp from the supporting member side of the temporary fixing laminate. The light irradiation conditions were as follows. As the xenon lamp, S2300 manufactured by Xenon Corporation was used. The wavelength range of this device is 270 nm to the near infrared region. The irradiation distance is the distance between the xenon lamp, which is the light source, and the supporting member. Applied voltage: 3700V Pulse width: 200μs ·Irradiation distance: 50mm Number of exposures: 1 ·Irradiation time: 200μs After irradiation with light from a xenon lamp, the condition of the test specimen was observed and the peelability was evaluated according to the following criteria. The evaluation results are shown in Table 1. A: The semiconductor chip naturally peeled off from the temporary fixing laminate by simply irradiating it with light, or the semiconductor chip was peeled off from the temporary fixing laminate without being damaged by inserting tweezers between the semiconductor chip and the curable resin layer. B: Even when tweezers were inserted between the semiconductor chip and the curable resin layer, the semiconductor chip was not peeled off from the temporary fixing laminate.

[0089] [Table 1]

[0090] (Consideration 2) A test specimen having a slide glass as a support member was prepared in the same manner as in "Study 1", except that the thicknesses of the copper layer and titanium layer constituting the light absorbing layer were changed as shown in Table 2. In Comparative Example 3, the light absorbing layer was not provided, and the curable resin layer was laminated directly on the support member. In Comparative Example 4, only the titanium layer was formed as the light absorbing layer. The peelability of the obtained test specimen was evaluated by a peel test similar to that in "Study 1". The transmittance of the light absorbing layer was measured by the same method as in "Study 1". The evaluation results are shown in Table 2.

[0091] [Table 2]

[0092] (Study 3) A light absorbing layer composed of a single or two metal layers shown in Table 3 was formed by sputtering on a 1300 μm thick slide glass as a support member. In the table, the configuration of the light absorbing layer is shown in the order of lamination from the slide glass side. For example, "Ti(50) / Cu(200)" means that a titanium layer having a thickness of 50 nm and a copper layer having a thickness of 200 nm were laminated in this order from the slide glass side. Examples 1, 3 and 4 are the same as Examples 1, 3 and 4 of Study 2. A temporary fixing laminate having a laminated configuration of a support member / light absorbing layer / curable resin layer was prepared on the light absorbing layer in the same procedure as in "Study 1". Furthermore, a test specimen for a peel test having a semiconductor chip temporarily fixed to the support member was prepared in the same procedure as in "Study 1". The transmittance of the light absorbing layer was measured in the same manner as in "Study 1".

[0093] Each test specimen was irradiated with pulsed light from a xenon lamp from the support member side of the temporary fixing laminate. The light irradiation conditions were as follows. As an irradiation device having a xenon lamp, PulseForge1300 manufactured by Novacentrix was used. The irradiation distance was the distance between the xenon lamp, which is the light source, and the support member. The pulse width was increased in increments of 10 μs from 150 μs, and the minimum pulse width at which the semiconductor chip naturally peeled off from the temporary fixing laminate by light irradiation alone was recorded. The pulsed light was irradiated while replacing the test specimen, and each test specimen was irradiated once. The minimum pulse width at which the semiconductor chip peeled off is shown in Table 3. Applied voltage: 800V Pulse width: 150~700μs ·Irradiation distance: 6mm Number of exposures: 1 Based on the minimum pulse width at which the semiconductor chip peeled off, the peelability was evaluated according to the following criteria. AAA: 150μs AA: 160μs or more and less than 350 A: 350 μs to 700 μs, or peeling due to dissolution of the light absorbing layer (A(Melt)) B: Peeling not possible within 700μs

[0094] [Table 3]

[0095] From the results of Studies 1, 2, and 3, it was confirmed that by using a temporary fixing laminate including a combination of a support member with a transmittance of 90% or more and a light absorbing layer with a transmittance of 3.1% or less, the semiconductor member can be temporarily fixed and then easily separated from the support member by irradiating it with incoherent light from a xenon lamp. [Explanation of symbols]

[0096] DESCRIPTION OF THE PREFERRED EMBODIMENTS 1...temporary fixing laminate, 10...support member, 30...temporary fixing material layer, 31...curable resin layer, 31c...cured curable resin layer, 32...light absorbing layer, 40...semiconductor substrate, 41...rewiring layer, 45...semiconductor member, 50...sealing layer, 60...semiconductor element, S...outer surface of temporary fixing material layer.

Claims

1. a step of preparing a temporary fixing laminate including a support member and a temporary fixing material layer provided on the support member, the temporary fixing material layer having a curable resin layer including at least one outermost surface of the temporary fixing material layer; a step of temporarily fixing a semiconductor member having a semiconductor substrate and a rewiring layer provided on one surface side of the semiconductor substrate to the support member via the temporary fixing material layer in an orientation in which the rewiring layer is located on the curable resin layer side; a step of processing the semiconductor member temporarily fixed to the support member; a step of irradiating the temporary fixing laminate with incoherent light from the support member side, thereby separating the semiconductor member from the support member; In this order, a part or the whole of the temporary fixing material layer is a light absorbing layer that absorbs light and generates heat, the transmittance of the support member for the incoherent light is 90% or more; the temporary fixing material layer has a transmittance of 3.1% or less for the incoherent light, the incoherent light source is a xenon lamp; A method for manufacturing a semiconductor device.

2. The method of claim 1 , wherein the incoherent light comprises infrared light.

3. The method according to claim 1 or 2, wherein the temporary fixing material layer has, as the light absorbing layer, a metal layer provided as a layer separate from the curable resin layer.

4. The method of claim 3 , wherein the metal layer has a transmittance for the incoherent light of 3.1% or less.

5. the light absorbing layer has two layers, a first layer and a second layer, and the first layer and the second layer are laminated in this order from the support member side, the first layer contains at least one metal selected from the group consisting of thallium, platinum, nickel, titanium, tungsten, and chromium; 5. The method of claim 3 or 4, wherein the second layer comprises at least one metal selected from the group consisting of copper, aluminum, silver, and gold.

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