Electronic apparatus

The display device addresses low brightness and high power consumption by using a transistor to control current flow in light-emitting elements, enabling high-intensity illumination and normal display modes, thus improving illumination and reducing power usage and deterioration.

JP2024180409AInactive Publication Date: 2024-12-26SEMICON ENERGY LAB CO LTD
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Patent Information

Application Number
JP2024172021
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2013-09-19
Filing Date
2024-10-01
Publication Date
2024-12-26
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

Existing display devices face issues with low brightness and high power consumption when used as light sources for flashes or strobes, leading to insufficient illumination and potential deterioration of light-emitting elements due to constant current driving, which can cause uneven screen brightness and burn-in.

Method used

A display device with a pixel structure that includes a transistor capable of controlling current flow through a light-emitting element, allowing operation in either saturation or linear regions to achieve high-intensity illumination or normal display modes, respectively, thereby reducing power consumption and minimizing deterioration.

Benefits of technology

The device can provide high-intensity illumination for subjects while maintaining normal display functionality, reducing power consumption, and minimizing issues like uneven brightness and burn-in.

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Abstract

To provide a display that can irradiate a subject with illumination light with high luminance; or to provide a display that can be used as a light source for a subject as an aspect of the present invention; or to make it possible to provide a display that can be used as a light source for a subject, can display a normal image and a normal character, can switch between the display of the image and character as an aspect of the present invention.SOLUTION: A transistor included in a light emitting device has a function to be operated in a saturated area in a period during which the light emitting device displays a character or an image, and the transistor included in the light emitting device has a function to be operated in a linear area in a period during which the light emitting device irradiates a subject with illumination light.SELECTED DRAWING: Figure 1
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Description

[Technical field]

[0001] The present invention relates to an article, a method, or a manufacturing method. , manufacture, or composition of matter. One embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a lighting device, an imaging device, or a security device. In particular, one aspect of the present invention relates to a method for manufacturing an image sensor. The present invention relates to a light source for an imaging device or a method for driving the same. [Background technology]

[0002] Electronic devices equipped with camera functions and imaging elements such as image sensors have been developed. In the field of portable electronic devices, electronic devices equipped with a camera function have been actively developed. In such portable electronic devices, the front of the device has a large display. The user can view the large screen and use the LEDs on the back of the electronic device. The image sensor is used to capture images and videos.

[0003] However, recently, image sensors are no longer only installed on the back of electronic devices, but also on the front of electronic devices. Electronic devices that are also mounted on the surface are also being developed. Electronic devices have also been developed in which the screen and the display are arranged on the same surface. The image sensor on the front of the electronic device captures the face of the person looking at the screen. (See Patent Document 1.) Furthermore, when using an electronic device as a videophone, While viewing the image of the person you are calling on the screen, you can take a picture of yourself with the image sensor and send it to the person you are calling. I can believe it.

[0004] On the other hand, when taking a picture using an image sensor, the illuminance of the subject may be low. In such cases, use a light source such as a flash or strobe to illuminate the subject and By increasing the angle, it is possible to take clearer photographs (see Patent Document 2). In addition to the image sensor, a separate flash is provided to illuminate the subject. On the other hand, in Patent Document 1, the display unit has a display function and a lighting function for the subject of the camera. The present invention discloses an electronic device having a function and a switching function. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2004-350208 A [Patent Document 2] JP 2007-110717 A Summary of the Invention [Problem to be solved by the invention]

[0006] Liquid crystal display devices are often used as displays for electronic devices, but organic electroluminescence (EL) displays are also used. A display device (or a light-emitting device) using a light-emitting element such as an (electroluminescence) element However, the characteristics of the light-emitting element deteriorate, and This can lead to a decrease in screen uniformity and may result in burn-in or other problems.

[0007] Therefore, even if the voltage-current characteristics of the light-emitting element deteriorate, the current value flowing through the light-emitting element is not changed. In order to achieve this, the light emitting element is driven so that a constant current flows through it. In other words, the light emitting element is driven by constant current driving.

[0008] However, in the case of constant current driving, the transistor that controls the current value flowing through the light emitting element is This means that the transistor operates in the saturation region. Therefore, the source-drain voltage of the transistor is large. Furthermore, the light source for flashes and strobes is a light source that uses light-emitting elements. In this case, it is necessary to make the light emitting element emit light with high luminance. In such a case, a transistor is used to control the current flowing through the light emitting element. A very large voltage is required for the source-drain voltage of the transistor, which results in high power consumption. It becomes annoying.

[0009] Conversely, if the image is displayed at normal brightness, and the normal brightness is used as a light source for a flash or strobe, Therefore, when using light-emitting elements, the luminance is low and the subject cannot be sufficiently illuminated. It ends up like this.

[0010] Therefore, one aspect of the present invention is a display device capable of irradiating a subject with illumination light of high luminance. Another object of the present invention is to provide a device for a subject. It is an object of the present invention to provide a display device that can be used as a light source. In one embodiment, the device can be used as a light source for a subject and can also display normal images and text. Another object of the present invention is to provide a display device or the like capable of switching between different display modes. One object of the present invention is to provide a display device that can be used for crime prevention purposes. Another object of one embodiment of the present invention is to provide a display device or the like with low power consumption. Alternatively, one embodiment of the present invention is a method for changing an operating region of a transistor to emit light. Another object of the present invention is to provide a display device or the like that drives an element. Another object of the present invention is to provide a novel display device or the like. One object of the present invention is to provide a novel lighting device.

[0011] The description of these problems does not preclude the existence of other problems. It is not necessary for the embodiment to solve all of these problems. The above will become apparent from the description in the specification, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0012] One embodiment of the present invention is a light-emitting device having a pixel. The pixel includes a transistor and a light-emitting element. The transistor has a function of controlling the amount of current flowing to the light-emitting element. During the period when the light emitting device is displaying characters or images, the transistor is saturated. The light emitting device has a function of being able to operate in a non-linear region, and the light emitting device irradiates illumination light onto a subject. During this period, the transistor has the ability to be operated in the linear region. The light emitting device is characterized by the above.

[0013] Another embodiment of the present invention is an electronic device including a light-emitting device and a camera unit, The pixel includes a transistor and a light-emitting element. The light-emitting device has a function of controlling the amount of current flowing through the element, and the light-emitting device displays characters or images. During the image display period, the transistors are operable in the saturation region. The light-emitting device has a function of irradiating the subject to be photographed using the camera unit with illumination light during the period in which the light-emitting device irradiates the subject to be photographed using the camera unit. In the present invention, the transistor has a function of being able to be operated in a linear region. It is an electronic device.

[0014] Alternatively, in one embodiment of the present invention, a camera unit includes a light emitting device that irradiates illumination light onto a subject. The electronic device has a function of photographing a subject while the light is shining on the subject. It is equipment.

[0015] Another embodiment of the present invention is a method for driving a light-emitting device having a pixel, The transistor controls the amount of current flowing through the light-emitting element. In the first operation mode, the light emitting device has a function of displaying a character or an image. and the transistor operates in a saturation region to emit light in a second mode of operation. The device irradiates an object with illumination light, and the transistor operates in a linear region. The present invention relates to a method for driving a light emitting device.

[0016] Another embodiment of the present invention is a method for driving an electronic device including a light-emitting device and a camera portion. The light emitting device has a pixel, and the pixel has a transistor and a light emitting element. The first operating mode has a function of controlling the magnitude of a current flowing through the light emitting element. In this mode, the light emitting device displays characters or images, and the transistor is in the saturation region. In the second operation mode, the light emitting device is configured to focus on a subject to be photographed using the camera unit. The transistor is irradiated with illumination light and is operating in a linear region. A method for driving the device.

[0017] Alternatively, in one aspect of the present invention, in a configuration, in the second operation mode, the camera unit The present invention relates to a method for driving an electronic device, the method being characterized in that the electronic device photographs an object. Effect of the Invention

[0018] One embodiment of the present invention provides a display device or the like capable of irradiating a subject with illumination light of high luminance. Alternatively, one aspect of the present invention can be used as a light source for a subject. According to another aspect of the present invention, a light source for a subject can be provided. A display device that can be used as a display device and can also display normal images and text, and can switch between the two. Alternatively, one embodiment of the present invention can be used for crime prevention purposes. Alternatively, one embodiment of the present invention can provide a display device or the like that consumes low power. A display device or the like can be provided. It is possible to provide a display device that drives a light-emitting element by changing the operating area of ​​the transistor. Alternatively, one embodiment of the present invention can provide a novel display device or the like. One aspect of the present invention can provide a novel lighting device or the like.

[0019] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. Effects other than these may also be included. The above is self-evident from the description, drawings, claims, etc. Other effects can be extracted from the claims and other descriptions. [Brief description of the drawings]

[0020] [Figure 1]1A to 1C illustrate a method for driving a light-emitting device according to one embodiment of the present invention. [Diagram 2] 1A to 1C are diagrams illustrating the operation of a light-emitting device according to one embodiment of the present invention. [Diagram 3] 1A to 1C illustrate a method for driving a light-emitting device according to one embodiment of the present invention. [Figure 4] 1A to 1C illustrate a method for driving a light-emitting device according to one embodiment of the present invention. [Diagram 5] FIG. 2 illustrates a circuit configuration of a light-emitting device according to one embodiment of the present invention. [Figure 6] FIG. 2 illustrates a circuit configuration of a light-emitting device according to one embodiment of the present invention. [Figure 7] 1A to 1C illustrate a method for driving a light-emitting device according to one embodiment of the present invention. [Figure 8] FIG. 2 illustrates a circuit configuration of a light-emitting device according to one embodiment of the present invention. [Figure 9] FIG. 1 is a block diagram illustrating a light-emitting device according to one embodiment of the present invention. [Figure 10] 1A and 1B are diagrams illustrating a timing chart of a light-emitting device according to one embodiment of the present invention. [Figure 11] 1A and 1B are diagrams illustrating a timing chart of a light-emitting device according to one embodiment of the present invention. [Figure 12] 1A and 1B are diagrams illustrating a timing chart of a light-emitting device according to one embodiment of the present invention. [Figure 13] FIG. 2 illustrates a circuit configuration of a light-emitting device according to one embodiment of the present invention. [Figure 14] FIG. 2 illustrates a circuit configuration of a light-emitting device according to one embodiment of the present invention. [Figure 15] FIG. 2 illustrates a circuit configuration of a light-emitting device according to one embodiment of the present invention. [Figure 16] FIG. 2 illustrates a circuit configuration of a light-emitting device according to one embodiment of the present invention. [Figure 17] 1A to 1C illustrate a method for driving a light-emitting device according to one embodiment of the present invention. [Figure 18] FIG. 2 illustrates a circuit configuration of a light-emitting device according to one embodiment of the present invention. [Figure 19] 1A and 1B are diagrams illustrating a timing chart of a light-emitting device according to one embodiment of the present invention. [Figure 20] 1A and 1B are diagrams illustrating a timing chart of a light-emitting device according to one embodiment of the present invention. [Figure 21] 1A and 1B are diagrams illustrating a timing chart of a light-emitting device according to one embodiment of the present invention. [Figure 22] 1A and 1B are diagrams illustrating a timing chart of a light-emitting device according to one embodiment of the present invention. [Diagram 23] 1A and 1B are diagrams illustrating a timing chart of a light-emitting device according to one embodiment of the present invention. [Figure 24] FIG. 2 illustrates a circuit configuration of a light-emitting device according to one embodiment of the present invention. [Diagram 25] FIG. 2 illustrates a circuit configuration of a light-emitting device according to one embodiment of the present invention. [Figure 26] FIG. 2 illustrates a circuit configuration of a light-emitting device according to one embodiment of the present invention. [Figure 27] FIG. 2 illustrates a circuit configuration of a light-emitting device according to one embodiment of the present invention. [Figure 28] 1A to 1C illustrate a method for driving a light-emitting device according to one embodiment of the present invention. [Figure 29] 1A to 1C illustrate electronic devices according to one embodiment of the present invention. [Diagram 30] 1A to 1C illustrate electronic devices according to one embodiment of the present invention. [Diagram 31] FIG. 1 illustrates a cross-sectional view of a display device according to one embodiment of the present invention. [Diagram 32] FIG. 1 illustrates a perspective view of a module according to one embodiment of the present invention. [Diagram 33] 1A to 1C illustrate electronic devices according to one embodiment of the present invention. [Diagram 34] 1A to 1C illustrate electronic devices according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] Hereinafter, an embodiment will be described with reference to the drawings. However, the embodiment may be different from the embodiment. The present invention can be implemented in any manner without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the present invention may be modified in various ways. In addition, in the configuration described below, Reference numerals indicating similar objects are used in different drawings, and the same parts or similar functions are shown. A detailed description of the portion having the symbol will be omitted.

[0022] In addition, the contents (or even a part of the contents) described in one embodiment may be used in the embodiment. Another content (or a part of the content) described in the embodiment, and / or one or more other embodiments The application, combination, or replacement of the contents (or part of the contents) described in the form It is possible to do the following:

[0023] The contents described in the embodiments are explained in detail with reference to various figures in each embodiment. This refers to the content that is stated or stated using the text in the specification.

[0024] In addition, a figure (or a part thereof) described in one embodiment may be different from another part of the figure, Another figure (or a part thereof) described in the embodiment, and / or one or more By combining with the figure (or a part of it) described in another embodiment of the present invention , and many more diagrams can be constructed.

[0025] In addition, regarding the contents not specified in the drawings or text in the specification, Or, for a certain value, it is possible to configure an invention that specifies the upper and lower limits. When a numerical range is stated, such as by narrowing the range arbitrarily, or By excluding one point in the scope, the invention can be defined by excluding a part of the scope. These can, for example, define that prior art does not fall within the technical scope of the present invention. This can be done.

[0026] As a specific example, a circuit diagram in which first to fifth transistors are used in a circuit is shown below. In that case, the circuit does not have a sixth transistor. Alternatively, the circuit does not have a capacitance element. Furthermore, it is possible to specify that the circuit has a certain connection structure. The invention can be configured by specifying that the sixth transistor is not included. The circuit does not have a capacitive element having a specific connection structure. For example, the gate of the third transistor is connected to the gate of the third transistor. Alternatively, the invention may be specified as not having a sixth transistor. For example, a capacitor element having a first electrode connected to the gate of a third transistor may be provided. It is possible to define the invention as not being

[0027] As another specific example, for a certain value, for example, "a certain voltage is 3 V or more and 10 V or less. In that case, for example, if a certain voltage is -2V or more and 1V or less, excluding the case where the voltage is less than 1V. It is possible to stipulate that the invention does not apply when a certain voltage is 13V or higher. For example, the invention may be stipulated that the voltage is between 5V and 8V. For example, the voltage may be set to about 9V. For example, the invention is defined as a voltage between 3V and 10V, but excluding the case of 9V. It is also possible.

[0028] As another specific example, for a certain value, for example, "It is preferable that a certain voltage is 10 V" In that case, for example, if a certain voltage is between -2V and 1V, Or, for example, the invention can be defined as except when a certain voltage is: It is possible to define the invention as except when the voltage is 13V or higher.

[0029] As another specific example, when describing the properties of a certain substance, for example, "a certain film is an insulating film," In that case, the insulating film is, for example, an organic insulating film. Alternatively, for example, the insulating film may be an inorganic insulating film. It is possible to define the invention as "except in the case where

[0030] As another specific example, regarding a certain laminated structure, for example, "a certain film is provided between A and B" In that case, for example, if the film is a laminated film of four or more layers, Or, for example, A and its membrane and It is possible to specify the invention as excluding the case where a conductive film is provided between the

[0031] In this specification, the terms "active elements" and "passive elements" are used interchangeably. For all terminals of devices (capacitive elements, resistive elements, etc.), the connection destination is not specified. However, a person skilled in the art may be able to configure one aspect of the invention. Even if the destination is not specified, one aspect of the invention is clear. When the contents are described in this specification, etc., one aspect of the invention that does not specify a connection destination is the same as the embodiment of the present specification. In particular, when the terminals are connected to multiple If such a case is considered, there is no need to limit the connection destination of the terminal to a specific location. Therefore, there are active elements (transistors, diodes, etc.) and passive elements (capacitive elements, resistive elements, etc.) By specifying the connection destinations of only some of the terminals of a device (e.g., It may be possible to configure one embodiment.

[0032] In this specification and the like, if at least the connection destination of a certain circuit is specified, it is understood by those skilled in the art that If you are a person who has experience in the field of electronics, you may be able to identify the invention. In some cases, a person skilled in the art can identify an invention by at least specifying the function. In other words, if a function is specified, it can be said that one aspect of the invention is clear. It may be possible to determine that one aspect of the invention is described in the present specification. Therefore, even if the function of a circuit is not specified, if the connection destination is specified, it can be considered as an embodiment of the invention. and can constitute one embodiment of the invention. For a certain circuit, even if the connection destination is not specified, if the function is specified, it can be considered as one aspect of the invention. What is disclosed can constitute an embodiment of the invention.

[0033] In this specification, etc., in a drawing or text described in a certain embodiment, It is possible to extract a part of the invention and use it as an embodiment of the invention. If a figure or text describing a certain part is included, the figure or text of that part is taken out. The above-mentioned contents are disclosed as one aspect of the invention and constitute one aspect of the invention. Therefore, for example, active elements (transistors, diodes, etc.) etc.), wiring, passive elements (such as capacitor elements, resistor elements), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described in a single or plural number in a drawing or text, and it is possible to extract a part thereof to constitute an aspect of the invention. For example, from a circuit diagram composed of N (N is an integer) circuit elements (such as transistors, capacitor elements, etc.), it is possible to extract M (M is an integer and M < N) circuit elements (such as transistors, capacitors elements, etc.) to constitute an aspect of the invention. As another example, from a cross-sectional view composed of N layers (N is an integer), it is possible to extract M (M is an integer and M < N) layers to constitute an aspect of the invention. As yet another example, from a flowchart composed of N elements (N is an integer), it is possible to extract M (M is an integer and M < N) elements to constitute an aspect of the invention.

[0034] In addition, in this specification, etc., in the drawing or text described in a certain embodiment, when at least one specific example is described, it is easily understood by those skilled in the art to derive the upper concept of the specific example. Therefore, in the drawing or text described in a certain embodiment, when at least one specific example is described, the upper concept of the specific example is also disclosed as an aspect of the invention and can constitute an aspect of the invention.

[0035] In addition, in this specification, etc., at least the content described in the drawing (even a part in the drawing) is disclosed as an aspect of the invention and can constitute an aspect of the invention. Therefore, for a certain content, if it is described in the drawing, even if it is not described using text,​ However, the contents are disclosed as one aspect of the invention and constitute one aspect of the invention. Similarly, a part of the drawings may be regarded as an embodiment of the invention. This is disclosed as an embodiment of the invention.

[0036] In the drawings, the size, layer thickness, or area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0037] For example, in this specification, a transistor includes a gate, a drain, and a source. The drain terminal is a diode that has at least three terminals. Between the drain region or drain electrode and the source (source terminal, source region or source electrode) A current flows through the drain, the channel region, and the source. Here, the source and drain are determined by the structure or operating conditions of the transistor. It is difficult to determine which is the source and which is the drain because it depends on the conditions. Therefore, the part that functions as the source and the part that functions as the drain are called the source. In some cases, the term "source" or "drain" is not used. In such cases, for example, The first terminal, the first electrode, or the first region is referred to as the first terminal, the first electrode, or the first region, and the other of the source and the drain is referred to as the second terminal. It may be referred to as a terminal, a second electrode, or a second region.

[0038] A transistor has at least three terminals including a base, an emitter, and a collector. In this case, the element may be, for example, an element having one of an emitter and a collector. The first terminal, the first electrode, or the first region is referred to as the first terminal, the first electrode, or the first region, and the other of the emitter and the collector is referred to as the second terminal. It may be written as a terminal, a second electrode, or a second region. When a polarized transistor is used, the term "gate" can be replaced with "base." It is.

[0039] For example, in the present specification, when it is explicitly stated that X and Y are connected, In this case, X and Y are electrically connected, and X and Y are functionally connected. The case where X and Y are directly connected is also considered to be disclosed in the present specification. Therefore, the present invention is not limited to a specific connection relationship, for example, a connection relationship shown in a drawing or a sentence. Any connections other than those shown in the drawings or text shall be deemed to be included in the drawings or text. do.

[0040] Here, X and Y are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.). , etc.).

[0041] An example of a direct connection between X and Y is a circuit that allows electrical connection between X and Y. The elements to be considered (e.g., switches, transistors, capacitance elements, inductors, resistance elements, When a resistor (such as an electrode, display element, light-emitting element, or load) is not connected between X and Y, The elements that allow electrical connection between X and Y (e.g., switches, transistors, capacitors, etc.) elements, inductors, resistors, diodes, display elements, light-emitting elements, loads, etc.) , X and Y are connected.

[0042] An example of a case where X and Y are electrically connected is The elements to be considered (e.g., switches, transistors, capacitance elements, inductors, resistance elements, One or more elements (such as an electrode, a display element, a light-emitting element, or a load) can be connected between X and Y. It is possible. The switch has a function that allows it to be turned on and off. A switch can be in a conductive state (on state) or a non-conductive state (off state) and can either pass current or not. The switch has the function of controlling whether or not current flows. When X and Y are electrically connected, This includes the case where Y is directly connected.

[0043] An example of a case where X and Y are functionally connected is a case where a functional connection between X and Y is possible. Circuits that perform the above functions (for example, logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion conversion circuits (DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits ( power supply circuits (voltage boost circuits, voltage drop circuits, etc.), level shifter circuits that change the potential level of signals, etc.) , voltage sources, current sources, switching circuits, amplifier circuits (which can increase the signal amplitude or current amount, etc.) circuits, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation One or more devices (such as a memory circuit, a control circuit, etc.) can be connected between X and Y. For example, even if another circuit is inserted between X and Y, the signal output from A If X and Y are transmitted to B, then X and Y are considered to be functionally connected. When X and Y are functionally connected, there are cases where X and Y are directly connected and cases where X and Y are functionally connected. and the case where they are electrically connected to each other.

[0044] In addition, if it is explicitly stated that X and Y are electrically connected, are electrically connected (i.e., there is another element or circuit between X and Y) When X and Y are functionally connected (i.e., when X and Y are connected), (When there is a functional connection between X and Y via another circuit in between) and when X and Y are directly connected (i.e., when X and Y are connected without any other element or circuit between them) is deemed to be disclosed in the present specification. If it is explicitly stated that it is connected, The same contents are deemed to be disclosed in the present specification and the like.

[0045] For example, the source (or the first terminal, etc.) of the transistor is connected via Z1 (or The drain (or second terminal, etc.) of the transistor is electrically connected to Z 2 (or not), it may be electrically connected to Y, or the source of the transistor (or the first terminal, etc.) is directly connected to a part of Z1, and another part of Z1 is directly connected to X. The drain (or second terminal, etc.) of the transistor is directly connected to a part of Z2. and another part of Z2 is directly connected to Y, It is possible to do so.

[0046] For example, "X and Y and the source (or first terminal, etc.) and drain (or second terminal, etc.) of a transistor The terminals of the transistor (or the first terminal, etc.) are electrically connected to each other, and X, the source of the transistor (or the first terminal, etc.) 1 terminal, etc.), the drain (or second terminal, etc.) of the transistor, and Y. "The source (or the third) of the transistor is connected to the The drain (or second terminal, etc.) of the transistor is electrically connected to X. The transistor source (or first terminal, etc.) is electrically connected to Y, and the transistor source (or first terminal, etc.) is electrically connected to X. The drain (or second terminal, etc.) of the transistor, Y, is electrically connected in this order. " Alternatively, "X is the source (or first terminal, etc.) of a transistor. The transistor is electrically connected to Y via a drain (or a second terminal, etc.) and a transistor is electrically connected to X via a drain (or a second terminal, etc.). The source (or first terminal, etc.) of a resistor, the drain (or second terminal, etc.) of a transistor ), Y is provided in this connection order. By using a simple expression method and specifying the order of connections in the circuit configuration, Distinguish between the source (or first terminal, etc.) and the drain (or second terminal, etc.) of a transistor. The technical scope can be determined based on the above.

[0047] Or, as another way of expressing it, for example, "the source (or first terminal, etc.) of a transistor is electrically connected to X through at least a first connection path, and the first connection path is , the second connection path does not have a second connection path, and the second connection path is a transistor The source (or first terminal, etc.) of the transistor and the drain (or second terminal, etc.) of the transistor The first connection path is a path via Z1, and the second connection path is a path between the transistor The drain (or second terminal, etc.) of the capacitor is electrically connected to Y through at least a third connection path. The third connection path does not include the second connection path, and the third connection path The connection path is the path through Z2. The source (or the first terminal, etc.) of the resistor is connected to the resistor via Z1 by at least the first connection path. and X is electrically connected to the first connection path, and the first connection path does not have a second connection path; The second connection path includes a connection path through a transistor, and the second connection path includes a drain of the transistor. (or the second terminal, etc.) is connected to Y via Z2 by at least a third connection path. The third connection path does not have the second connection path. Alternatively, the source (or the first terminal, etc.) of the transistor may be at least The first electrical path is electrically connected to X through Z1, and the first electrical path is The primary path does not have a second electrical path, and the second electrical path is a From the source (or first terminal, etc.) to the drain (or second terminal, etc.) of the transistor The drain (or second terminal, etc.) of the transistor is connected to at least a third The third connection path is electrically connected to Y through Z2 by an electrical path of The fourth electrical path does not include the fourth connection path, and the fourth electrical path is a drain of a transistor. (or second terminal, etc.) to the source (or first terminal, etc.) of the transistor. Using the same expression as these examples, the circuit configuration By defining the connection path in Distinguish between the first terminal (or the first terminal, etc.) and the drain (or the second terminal, etc.) to determine the technical scope. can be done.

[0048] Note that these expression methods are merely examples, and the present invention is not limited to these expression methods. , Y, Z1, and Z2 are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layer, etc.).

[0049] In addition, the circuit diagram shows independent components as if they are electrically connected to each other. Even if the components are the same, one component may have the functions of multiple components. For example, when a part of the wiring also functions as an electrode, one conductive film has the function of the wiring and The electrode functions as both components. The term "electrochemically connected" refers to a case where one conductive film has the functions of multiple components. This also falls within the scope of the above.

[0050] In addition, the terms "electrode" and "wiring" used in this specification and the like do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wire." In addition, the term "electrode" or "wiring" may be used to refer to the plural "electrodes" or "wirings". This also includes cases where the "line" is formed as a single unit.

[0051] Voltage is the potential difference between two points, and potential is the electrostatic field at a certain point. This refers to the electrostatic energy (electrical potential energy) of a unit charge in a particle. Generally, the potential difference between the potential at a certain point and a reference potential (e.g., ground potential) is This is simply called potential or voltage, and potential and voltage are sometimes used synonymously. For this reason, there are cases where potential can be read as voltage, and voltage can be read as potential. There are cases where this is the case.

[0052] Generally, potential and voltage are relative. Therefore, ground potential and earth potential are The potential is not necessarily limited to 0 volts.

[0053] Also, in the drawings, sizes, layer thicknesses, or areas are exaggerated for clarity. Therefore, the scale is not necessarily limited to that shown in the drawings. The drawings are merely schematic illustrations, and are not limited to the shapes or values ​​shown in the drawings. Variations in signals, voltages, or currents due to noise, or variations in timing This can include variations in voltage or current, etc.

[0054] In addition, in the present specification and the like, the layout of each circuit block in the drawings is not particularly limited for the purpose of explanation. Even if the drawings show different circuit blocks realizing different functions, In actual circuits or regions, different functions may be realized in the same circuit or region. In addition, the functions of each circuit block in the drawings may be specified for the purpose of explanation. Even if it is shown as one circuit block, in the actual circuit or area, In some cases, the processing performed by one circuit block is performed by a plurality of circuit blocks.

[0055] For example, in this specification and the like, the term "display element," "display device having a display element," "light-emitting element," A light-emitting device, which is a device having a light-emitting element, can be used in various forms or in various Examples of a display element, a display device, a light-emitting element, or a light-emitting device include , EL (electroluminescence) elements (EL elements containing organic and inorganic materials, organic EL elements, inorganic EL elements), LEDs (white LEDs, red LEDs, green LEDs, blue LEDs, etc.) ), transistors (transistors that emit light according to electric current), electron-emitting devices, liquid crystal devices, Dye ink, electrophoretic element, grating light valve (GLV), plasma display Display using PDP and MEMS (Micro-Electro-Mechanical Systems) Element, Digital Micromirror Device (DMD), DMS (Digital Microsha MIRASOL (registered trademark), IMOD (Interference Modulator) ion) elements, electrowetting elements, piezoelectric ceramic displays, carbon Nanotubes, etc., due to electromagnetic effects, contrast, brightness, reflectance, transmittance, etc. One example of a display device using an EL element is the E One example of a display device using electron emission elements is the field FED (Fiber Emission Display) or SED (Semiconductor Device) Flat Panel Display rface-conduction Electron-emitter Displa An example of a display device using liquid crystal elements is a liquid crystal display (transmissive type Liquid crystal display, semi-transmissive liquid crystal display, reflective liquid crystal display, direct-view liquid crystal display Display using electronic ink or electrophoretic elements. An example of such a display device is electronic paper.

[0056] For example, in this specification, transistors having various structures are used as transistors. Therefore, there is no limitation on the type of transistor to be used. Examples of such transistors include transistors having single crystal silicon, or transistors having amorphous silicon or polycrystalline silicon. Amorphous silicon, microcrystalline (also called microcrystal, nanocrystal, or semi-amorphous) A transistor having a non-single crystal semiconductor film, such as a single crystal semiconductor film, can be used. Alternatively, thin-film transistors (TFTs) made from these semiconductors can be used. There are various advantages to using TFTs. For example, they are smaller than single crystal silicon. Since it can be manufactured at a very low temperature, it is possible to reduce manufacturing costs and to increase the size of manufacturing equipment. Since the manufacturing equipment can be made larger, it is possible to manufacture on large substrates. Since a large number of display devices can be manufactured, the manufacturing cost can be reduced. Therefore, a substrate having low heat resistance can be used. Alternatively, a display element can be manufactured using a transistor on a light-transmitting substrate. It is possible to control the transmission of light. Also, because the film thickness of the transistor is thin, A part of the film that forms the photodiode can transmit light. This improves the aperture ratio. It is possible.

[0057] In addition, when manufacturing polycrystalline silicon, a catalyst (such as nickel) is used to form the crystals. This will further improve the crystallinity and make it possible to manufacture transistors with good electrical characteristics. As a result, the gate driver circuit (scanning line driver circuit) and the source driver circuit (signal line driver circuit) and signal processing circuits (signal generation circuit, gamma correction circuit, DA conversion circuit, etc.) on the board. You can form a body.

[0058] In addition, when manufacturing microcrystalline silicon, a catalyst (such as nickel) is used to form the crystal. This makes it possible to further improve the crystallinity and manufacture transistors with good electrical characteristics. In some cases, the crystallinity can be improved by simply applying heat treatment without laser irradiation. As a result, part of the source driver circuit (analog switch, etc.) and the gate The driver circuit (scanning line driving circuit) can be formed integrally on the substrate. Therefore, when laser irradiation is not performed, unevenness in the crystallinity of silicon can be suppressed. Therefore, it is possible to display images with improved quality. However, catalysts (such as nickel) It is possible to produce polycrystalline silicon or microcrystalline silicon without using

[0059] In addition, improving the crystallinity of silicon to polycrystalline or microcrystalline can reduce the overall size of the panel. It is preferable, but not limited to, to perform the above. The crystallinity of the silicon may be improved by selectively irradiating the silicon with laser light. For example, the peripheral circuit area, which is an area other than the pixels, can be irradiated with light. Only in the area of ​​the gate driver circuit and the source driver circuit, or only in the area of ​​the source driver circuit, It is also possible to irradiate only a part of the buffer circuit (e.g., an analog switch) with laser light. As a result, silicon crystallization is improved only in areas where high-speed circuitry is required. Since there is little need for high-speed operation in the pixel region, the crystallinity is improved. Even if the pixel circuit is not connected to the crystal, it can still operate without any problems. Since the area where the performance needs to be improved is small, the manufacturing process can be shortened. Throughput can be increased and manufacturing costs can be reduced. Since a small number of manufacturing devices are required, manufacturing costs can be reduced.

[0060] An example of a transistor is a compound semiconductor (e.g., SiGe, GaAs, etc.). , or oxide semiconductors (e.g., ZnO, InGaZnO, IZO (indium zinc oxide) (Indium Tin Oxide), ITO, SnO, TiO, AlZnSnO (AZTO), A transistor having a material such as ITZO (In-Sn-Zn-O) can be used. Alternatively, these compound semiconductors or these oxide semiconductors may be thin-film transistors. This allows the manufacturing temperature to be lowered, so for example This makes it possible to manufacture transistors at room temperature. For example, a transistor can be formed directly on a plastic substrate or a film substrate. In addition, these compound semiconductors or oxide semiconductors are used for the channel portion of a transistor. For example, these compound semiconductors or The oxide semiconductor can be used as a wiring, a resistor, a pixel electrode, a light-transmitting electrode, or the like. Since these can be formed or deposited simultaneously with the transistors, the cost can be reduced. can be reduced.

[0061] Note that an example of a transistor is a transistor formed by an ink-jet method or a printing method. These can be used for manufacturing at room temperature, manufacturing at a low vacuum, or It can be manufactured on a large substrate. Therefore, it can be manufactured without using a mask (reticle). This allows the transistor layout to be easily changed. Alternatively, it can be manufactured without using resist, which reduces material costs and the number of processes. Or, since it is possible to apply the film only to the necessary parts, it is possible to apply the film after forming the film on the entire surface. This method wastes less material and is less costly than etching.

[0062] An example of a transistor is a transistor having an organic semiconductor or a carbon nanotube. These can be used to fabricate transistors on a flexible substrate. It is possible to form transistors using organic semiconductors and carbon nanotubes. The device used can be made shock resistant.

[0063] Note that as the transistor, transistors having various other structures can also be used. For example, transistors include MOS transistors, junction transistors, and bipolar transistors. A MOS transistor is used as the transistor. This allows the size of the transistors to be reduced. It is possible to mount a bipolar transistor as a transistor. This allows a large current to flow, which allows the circuit to operate at high speed. It is also possible to mix MOS transistors and bipolar transistors on a single substrate. This can realize low power consumption, small size, high speed operation, etc. come.

[0064] For example, in this specification, an example of a transistor is a transistor having two or more gate electrodes. A multi-gate transistor can be used. Since the panel regions are connected in series, a structure in which multiple transistors are connected in series is obtained. Therefore, the multi-gate structure reduces the off-current and improves the breakdown voltage of the transistor (reliability). Or, by using a multi-gate structure, it is possible to improve the efficiency when operating in the saturation region. Even if the voltage between the drain and source changes, the current between the drain and source does not change much. The voltage-current characteristic does not change and has a flat slope. By using certain voltage-current characteristics, it is possible to create an ideal current source circuit or a circuit with a very high resistance. As a result, a differential circuit or a current mirror circuit with good characteristics can be realized. It is possible to achieve the following:

[0065] An example of a transistor is a structure in which gate electrodes are arranged above and below a channel. A transistor having a structure in which gate electrodes are arranged above and below the channel can be applied. By doing so, the circuit configuration becomes like multiple transistors connected in parallel. As a result, the channel area increases, and the current value can be increased. A structure in which gate electrodes are arranged above and below makes it easier for a depletion layer to form. , the S value can be improved.

[0066] An example of a transistor is a transistor having a structure in which a gate electrode is disposed above a channel region. a structure in which the gate electrode is disposed under the channel region; a positive staggered structure; and a reverse staggered structure. A structure in which the channel region is divided into a plurality of regions, a structure in which the channel regions are connected in parallel, or A transistor having a structure in which the channel regions are connected in series can be used. Transistors are available in planar, FIN, and TRI-GATE types. gate type), top gate type, bottom gate type, double gate type (gates above and below the channel) The configuration can be various, such as

[0067] As an example of a transistor, a source electrode or A transistor with an overlapping drain electrode can be used. By making the source electrode and drain electrode overlap the This can prevent unstable operation caused by charge accumulating in a portion of the panel region.

[0068] As an example of a transistor, a structure in which an LDD region is provided can be applied. By providing a gate, the off-state current can be reduced or the withstand voltage of the transistor can be improved (reliability can be improved). Alternatively, by providing an LDD region, when operating in the saturation region, Even if the voltage between the drain and source is changed, the drain current does not change much and the slope is flat. A stable voltage-current characteristic can be obtained.

[0069] For example, in this specification, it is possible to form transistors using various substrates. The type of substrate is not limited to a specific one. An example of the substrate is a semiconductor substrate. Solid substrates (e.g., single crystal substrates or silicon substrates), SOI substrates, glass substrates, quartz substrates, Includes plastic substrates, metal substrates, stainless steel substrates, and stainless steel foil. Substrates for bonding, tungsten substrates, substrates with tungsten foil, flexible substrates, bonding Examples of glass substrates include laminated films, paper containing fibrous materials, and base films. Examples of the glass include barium borosilicate glass, aluminoborosilicate glass, and soda lime glass. Examples of flexible substrates include polyethylene terephthalate (PET), Representative examples include polyethylene naphthalate (PEN) and polyethersulfone (PES). Plastic, acrylic or other flexible synthetic resins. Examples of the material include polypropylene, polyester, polyvinyl fluoride, and polyvinyl chloride. Examples of the base film include polyester, polyamide, and polyimide. , inorganic deposition film, or paper. In particular, semiconductor substrates, single crystal substrates, or SOI By manufacturing a transistor using a substrate, etc., the characteristics, size, shape, etc. It is possible to manufacture transistors with less variation, higher current capability, and smaller size. When a circuit is constructed using such transistors, the power consumption of the circuit can be reduced or This allows for high integration.

[0070] Note that a transistor is formed using a certain substrate and then transferred to another substrate. However, the transistor may be disposed on another substrate. In addition to the substrate on which the above-mentioned transistors can be formed, the substrates include paper substrates, cellophane substrates, and the like. substrates made of natural fibers (silk, cotton, hemp), synthetic fibers (nylon, Polyurethane, polyester) or regenerated fiber (acetate, cupra, rayon, regenerated The substrates used are made of synthetic polyester, leather, or rubber. This allows the formation of transistors with good characteristics and low power consumption. It is possible to manufacture devices that are less likely to break, heat resistant, lightweight, or thin.

[0071] All of the circuits required to realize a given function are mounted on the same substrate (e.g., glass It can be formed on a substrate, a plastic substrate, a single crystal substrate, an SOI substrate, etc. This reduces the number of components, thereby reducing costs, and reduces the number of connections to circuit components. This can improve reliability.

[0072] It is possible that all of the circuits required to realize a given function are not formed on the same substrate. In other words, part of the circuitry required to realize a given function is formed on a certain substrate. Another part of the circuitry required to realize a given function is formed on a different substrate. For example, some of the circuits required to realize a certain function can be made of glass. Another part of the circuitry required to realize a given function is formed on the single crystal substrate. (or SOI substrate). The single crystal substrate (also called IC chip) on which another part of the circuitry required for the semiconductor device is formed is called COG ( By using the Chip On Glass (Chip On Glass) method, the IC is connected to the glass substrate and then attached to the glass substrate. It is possible to place the chip on the board. Or, the IC chip can be placed on the board using TAB (Tape Auto) omated Bonding), COF(Chip On Film), SMT(Su Surface Mount Technology, or a printed circuit board, etc. In this way, part of the circuit is formed on the same substrate as the pixel section. This reduces the number of components, resulting in lower costs, and the number of connections to the circuit components. This reduces the power consumption and improves the reliability of the circuit. In many cases, circuits with high drive frequencies consume a lot of power. Then, such a circuit is formed on a substrate (such as a single crystal substrate) separate from the pixel section, and By using this IC chip, it is possible to prevent an increase in power consumption. do.

[0073] (Embodiment 1) In this embodiment, a method for driving a light-emitting device according to one embodiment of the present invention will be described.

[0074] The light emitting device has, for example, a display function and a function for detecting an object to be photographed by a camera. The display function is a function for displaying characters and images, and is the same as the normal display function. The lighting function is the function of emitting illumination light and adjusting the illuminance of the subject. The light emitting device has a function of switching between these functions or operations. However, as an example, the driving method and state when realizing the display function, The driving methods and states when realizing the lighting function are different for each.

[0075] The lighting function may have a purpose or function other than improving the illuminance of the subject. For example, it may be possible to simply brighten dark areas, or it may be possible to use it for crime prevention or traffic control. For example, if someone is about to attack you, you can turn on the lights. You can also use it as a crime prevention measure by shining it on your hand to blind people. While riding your bike, turn on the lights to let surrounding vehicles know that you are there. This may be done.

[0076] In one example, the light emitting device has two operating modes. The light emitting device is operated by different driving methods.

[0077] First, a driving method in the first operation mode will be described. As shown in FIG. 1A, the capacitance element 110 is connected to an external A voltage corresponding to a video signal input from a video input terminal (not shown) is held in the switch 118. Therefore, the load 104 is connected to the wiring 104 through the transistor 108. A current is supplied to the transistor 106. The transistor 108 is connected to the voltage held in the capacitor 110. Accordingly, the magnitude of the current flowing through the load 106 can be controlled. By holding the voltage corresponding to the image to be displayed in the pixel 110, the image can be displayed. come.

[0078] Next, we will explain the driving method in the second operation mode. As shown in FIG. 1B, the switch 118 is in an on state. Therefore, the potential of the wiring 124 is supplied to the gate of the transistor 108. The potential of the wiring 124 is low, similar to the potential of the wiring 122 connected to the load 106. Therefore, the voltage between the wiring 104 and the gate of the transistor 108, that is, Therefore, the absolute value of the gate-source voltage of the transistor 108 becomes very large. A very large current can be passed through the load 106. Here, the load 106 is a light emitting element. In the case where the light emitting element has a light-emitting function, the light emitting element has a very high luminance. It is possible to illuminate the subject with a sufficiently large amount of light.

[0079] In this way, when using a self-luminous display, the brightness of each pixel can be freely increased. Therefore, it is possible to freely switch between a display function using normal brightness and a lighting function using high brightness. It is possible to do so.

[0080] Here, let us consider the operating region of the transistor 108. The wiring 104 and the gate of the transistor 108 are connected to the light emitting element 106A. The absolute value of the gate-source voltage of the transistor 108 |VGS| is plotted on the horizontal axis, and the current IDS flowing through the transistor 108 and the light emitting element 106A is plotted on the vertical axis. The graph in this case is shown in FIG. 2(B).

[0081] The absolute value |VGS| of the gate-source voltage of the transistor 108 is gradually increased. When the absolute value of the threshold voltage of the transistor 108 becomes larger than |VTH|, current starts to flow. Then, the absolute value of the gate-source voltage of the transistor 108, |VGS|, is set to the value of VSAT. At this time, a current of ISAT flows. In this region, the current is When the transistor 108 is conducting, it operates in the saturation region. Even if the drain-source voltage of the transistor 108 changes, the current value flowing through the transistor 108 remains constant. There is almost no change in the current. In other words, the transistor 108 functions as a current source. Since the element 106A is controlled by a current source, even if the voltage-current characteristics of the light-emitting element deteriorate, The current value flowing through the light emitting element does not change. In other words, the light emitting element is driven by a constant current. In other words, the light emitting element is driven by a current source. This means that the effects of degradation of the light-emitting elements are less noticeable, reducing display unevenness and burn-in. When implementing a display function, this motion can be reduced when current is flowing. It is desirable to operate the device in the operating region (saturation region).

[0082] Here, the current source supplies a constant current even if the voltage applied to both ends of the current source changes. Alternatively, for example, the current source has a function of changing the potential of an element connected to the current source. Even if the element is tuned, it still has the function of supplying a constant current to the element.

[0083] A voltage source is a power source other than a current source. A voltage source generates a current that flows through a circuit connected to it. Even if the current flowing through the circuit changes, the circuit has the function of supplying a constant voltage. A current source also has the function of supplying voltage and current, but it supplies a constant current regardless of changes in the The difference between them is whether they have the function of supplying current or not. Even if the voltage across the two terminals changes, the voltage source has the function of supplying a constant current. Even if the voltage is high, the device has the function of supplying a constant voltage.

[0084] Next, the absolute value |VGS| of the gate-source voltage of the transistor 108 is calculated by subtracting VSAT from For example, the absolute value of the gate-source voltage |VGS| of the transistor 108 is set to At this time, a current of IFLA value, which is larger than the ISAT value, flows. The absolute value |VGS| of the gate-source voltage of the transistor 108 is greater than the value of VSAT. In the high region, when current is flowing, transistor 108 operates in the linear region. Therefore, when the drain-source voltage of the transistor 108 changes, the transistor The current value flowing through the transistor 108 also changes. In other words, the transistor 108 functions as a switch. In other words, the current flowing through the light emitting element 106A is equal to the voltage supplied to the light emitting element 106A. That is, it is controlled by the voltage between the wiring 104 and the wiring 122. When the voltage-current characteristics of the element deteriorate, the current value of the current flowing through the light-emitting element changes. In other words, the light emitting element is driven by constant voltage driving. It can be said that the light-emitting element is driven by the voltage source connected to 4. However, because a large current flows, it emits light with high brightness. If you want to display an image, you can see unevenness and burn-in. However, if it is used simply as a light source, such unevenness and burn-in are unlikely to occur. Therefore, when realizing the lighting function, it is necessary to have a current flowing. In this case, it is desirable to operate the device in this operating region (linear region).

[0085] That is, when a display function is realized, the transistor 108 is operated in the saturation region, the transistor 108 is operated as a current source, and light is emitted by constant current drive. On the other hand, when the lighting function is realized, the current is When the current is flowing, the transistor 108 is operated in the linear region. It is preferable to operate it as a switch and drive the light emitting element 106A with a constant voltage. However, one aspect of an embodiment of the present invention is not limited to these.

[0086] The brightness when realizing the lighting function is the brightest level when realizing the display function. The brightness is preferably 1.5 times or more, more preferably 2 times or more, of the brightness when the tone is displayed. Or, the absolute value of the gate-source voltage of the transistor 108 when realizing the lighting function | VGS| is the trace when the brightest gray scale is displayed when the display function is realized. The absolute value |VGS| of the gate-source voltage of the transistor 108 is preferably 1.5 times or more. In addition, when the lighting function is realized, the current of the light emitting element 106A is preferably at least twice as large. The value is the current value when the brightest gradation is displayed when the display function is realized. It is preferable that the ratio is 1.5 times or more, and more preferably 2 times or more. The absolute value of the gate-source voltage |VGS| of the transistor 108 is the sum of the gate-source voltages of the wiring 104 and the wiring 1 The voltage between the terminals 22 and 23 is preferably 0.6 times or more, more preferably 1 time or more. Or, the absolute value of the gate-source voltage of the transistor 108 when the lighting function is realized |V GS| is less than or equal to twice the magnitude of the voltage between wire 104 and wire 122, and more preferably It is preferable that the ratio is 1.5 times or less. However, one aspect of the embodiment of the present invention is not limited to this. stomach.

[0087] In order to realize a lighting function, the wiring 124 is provided so as to emit light with high brightness. 3A and 3B, the wiring 124 may be connected to the wiring 122. An example of combining these into one wiring is shown in 2.

[0088] In FIG. 1 and other figures, an example in which the transistor 108 is a P-channel type is shown. One aspect of the embodiment is not limited to this. By reversing the magnitude relationship of the potentials of the light emitting element 106A or by reversing the orientation of the light emitting element 106A, 3(C) and 3(D), the same applies when the transistor 108 is an N-channel type. It can be operated in the following way.

[0089] In addition, when a lighting function is realized, while the transistor 108 is passing a current, As shown in FIG. 1, the switch 118 may be in the on state at all times. The potential of the gate of the transistor 108 is stable. After the state shown in FIG. 1(B) is reached, the switch 11 is turned on as shown in FIG. 1(A). 8 may be turned off. In that case, the voltage is held in the capacitance element 110. Therefore, the transistor 108 can supply a suitable current. 8, the parasitic capacitance of the capacitance element 110 Alternatively, as shown in FIG. The terminal of the transistor 108 is electrically connected to the gate of the transistor 108. The other terminal may be in a floating state. In this case, the switch 118 is turned on. This allows transistor 108 to source an adequate current.

[0090] In addition, in FIG. 1A, FIG. 1B, and FIG. 1C, the wiring 104 is connected to the transistor 108. However, one aspect of the embodiment of the present invention is not limited to this. As shown in FIG. 4(A) and FIG. 4(B), the wiring 104A and the wiring 104B are They may be connected.

[0091] In this embodiment, an example in which the display function and the illumination function are switched is shown. However, one aspect of the embodiment of the present invention is not limited thereto. Depending on the situation, only the display function or only the lighting function may be operated.

[0092] This embodiment describes an example of the basic principle. Any part or all of the embodiments may be freely combined with any part or all of the other embodiments. , can be applied or substituted.

[0093] (Embodiment 2) In this embodiment, a specific example of a light-emitting device according to one embodiment of the present invention and a driving method thereof will be described. do.

[0094] FIG. 5 shows a specific example of a circuit using the circuit of FIG. 1(A). FIG. 5 shows a circuit equivalent to one pixel. The wiring 102 is connected to the gate of the transistor 108 via the switch 312. is.

[0095] The wiring 102 has a function of supplying and transmitting a video signal. Alternatively, a precharge signal or an initialization signal may be supplied to the wiring 102. In other words, the wiring 102 has a function of supplying and transmitting a signal to the switch 312. Therefore, the wiring 102 is a video signal line, a source signal line, an initialization signal line, It has at least one of the following functions.

[0096] The wiring 104 can supply or transmit a voltage or current to the transistor 108. Alternatively, the wiring 104 has a function of supplying or transmitting a voltage or a current to the load 106. Alternatively, the wiring 104 can be connected to the load 106 as a reverse bias. The wiring 1 has a function of supplying or transmitting a bias voltage. 04 has a function of supplying or transmitting a voltage or current to the capacitive element 110. Therefore, the wiring 104 is at least one of a current supply line, a power supply line, a capacitance line, etc. Note that the potential of the wiring 104 is preferably constant. However, one aspect of the embodiment of the present invention is not limited to this, and a pulse signal may be supplied. .

[0097] The wiring 124 can supply or transmit a voltage to the gate of the transistor 108. Alternatively, the wiring 124 can control the operating region of the transistor 108. It has the function of supplying or transmitting a potential that can be used. Line 124 provides or conveys a potential to initialize transistor 108. Alternatively, the wiring 124 can turn on the transistor 108. It has a function of supplying or transmitting a potential such as that The line 124 is a functional line capable of supplying or transmitting a potential to realize a lighting function. Alternatively, the wiring 124 has a function of supplying or transmitting a voltage or a current to the capacitor 110. Alternatively, the wiring 124 may be connected to the switch 118. The wiring 12 has a function of supplying and transmitting voltage and current. 4 is at least one of a power supply line, an initialization line, a lighting function control line, an operating area control line, etc. Note that the potential of the wiring 124 is preferably constant. However, one aspect of the embodiment of the present invention is not limited to this, and a pulse signal may be supplied. .

[0098] The transistor 108 can control the amount of current flowing through the load 106. Therefore, the transistor 108 functions as a drive transistor, a current control transistor, It has at least one function, such as a register.

[0099] The switch 312 controls the conduction state between the wiring 102 and the gate of the transistor 108. Alternatively, the switch 312 has a function of selecting a pixel. Alternatively, the switch 312 may be configured to supply a video signal to the pixel or not. Therefore, the switch 312 is a selection switch. , a switching switch, or the like.

[0100] The switch 118 controls the conduction state between the wiring 124 and the gate of the transistor 108. Alternatively, the switch 118 may have a function to operate a lighting function or Alternatively, the switch 118 may be a transistor. It is possible to control whether or not a potential for operating the photodiode 108 in a linear region is supplied to the pixel. Alternatively, the switch 118 has a function of initializing the transistor 108 or Alternatively, the switch 118 may be a transistor. The control circuit 104 has a function of controlling whether the starter 108 is turned on or not. The switch 118 has a function of controlling whether or not the lighting function is realized. Alternatively, the switch 118 determines whether or not a voltage is supplied to the gate of the transistor 108. Therefore, the switch 118 is a control switch. At least one of an operation control switch, a function changeover switch, an initialization switch, etc. It has two functions.

[0101] As in FIG. 4, the wiring 104 is divided into wiring 104A, wiring 104B, etc. The circuit diagram for this case is shown in Figure 6.

[0102] The wiring 104A can supply and transmit a voltage or a current to the transistor 108. Alternatively, the wiring 104A has a function of supplying a voltage or a current to the load 106. Alternatively, the wiring 104A has a function of transmitting a current to the load 106. , has a function of being able to supply or transmit a reverse bias voltage, or The wiring 104B can supply or transmit a voltage or a current to the capacitance element 110. Therefore, the wiring 104A has at least one of the functions of a current supply line, a power supply line, etc. Alternatively, the wiring 104B may have at least one function, such as a capacitance wiring, a power supply line, etc. Note that the potentials of the wiring 104A and the wiring 104B are constant. However, one aspect of the embodiment of the present invention is not limited to this, and a pulse signal may be provided. In particular, by changing the potential of the wiring 104B, capacitive coupling can be utilized. The gate potential of the transistor 108 can be controlled using this.

[0103] Note that the wiring 124 may be connected to the wiring 122 as in FIGS. The circuit diagram for this case is shown in FIG.

[0104] Next, the driving method will be described. First, the driving method in the first operation mode will be described. This corresponds to a driving method for implementing a display function. First, as shown in FIG. In this way, the pixel is selected, the switch 312 is turned on, and the video signal is output from the wiring 102. is supplied to the capacitance element 110. Then, as shown in FIG. 7B, the pixel becomes unselected. Then, the switch 312 is turned off and a voltage corresponding to the video signal is held in the capacitance element 110. A current is supplied to the load 106 by a transistor 108. The magnitude of the current is The length of the signal corresponds to the size of the video signal.

[0105] Next, we will explain the driving method in the second operation mode. This corresponds to the driving method when the switch 118 is turned on as shown in FIG. The potential of the wiring 124 is supplied to the gate of the transistor 108. Since the absolute value of the gate-source voltage of 8 is large, a large current flows through the load 106 . Next, the switch 118 may be turned off as shown in FIG. The potential of the wiring 124 is held in the capacitor 110, and a voltage of a corresponding magnitude is generated. Current is provided from transistor 108 to load 106 .

[0106] Next, FIG. 8 shows an example of a circuit in which the switch in FIG. 5 is realized by a transistor.

[0107] For example, in this specification, switches of various shapes can be used. The switch can be in a conducting (ON) or non-conducting (OFF) state, A switch has the function of controlling whether or not a current flows. It has the function of selecting and switching paths, for example, to allow current to flow through path 1. It has a function to selectively switch between allowing current to flow through path 1 and allowing current to flow through path 2. An example of the switch is an electrical switch or a mechanical switch. In other words, the switch is limited to certain types as long as it can control the current. An example of a switch is a transistor (e.g., a bipolar transistor, MOS transistors, etc.), diodes (e.g., PN diodes, PIN diodes, Schottky diode, MIM (Metal Insulator Metal) die MIS (Metal Insulator Semiconductor) die diode-connected transistors, etc.), or logic circuits that combine these An example of a mechanical switch is the digital micromirror device (DMD). As shown in the figure, MEMS (Micro-Electro-Mechanical System) technology is used to The switch has a mechanically movable electrode, and when the electrode moves, In this way, the device operates by controlling conduction and non-conduction.

[0108] When a transistor is used as a switch, the transistor is treated as a simple switch. Since the transistor operates as a gate, the polarity (conductivity type) of the transistor is not particularly limited. In order to suppress the current, it is desirable to use a transistor having a polarity with a smaller off-state current. An example of a transistor with low off-state current is a transistor having an LDD region or There are transistors having a multi-gate structure.

[0109] When using transistors as switches, the transistors that operate as switches The source potential of the capacitor operates at a value close to the potential of the low-potential power supply (Vss, GND, 0V, etc.). In this case, it is preferable to use an N-channel transistor as the switch. If the source potential is close to the potential of the high-potential power supply (such as Vdd), the switching It is desirable to use P-channel transistors as switches because N-channel When a transistor operates with its source at a potential close to the low-potential power supply, it is called a P-channel transistor. In a transistor, when the source operates at a potential close to that of the high-potential power supply, the gate and source This is because the absolute value of the voltage between the Or, the transistor can operate as a source follower. This is because the output voltage is less likely to become small because the do.

[0110] As switches, both N-channel and P-channel transistors are used. Alternatively, a CMOS switch may be used. If either the N-channel transistor or the N-channel transistor is conductive, Therefore, the voltage of the input signal to the switch is Even if the voltage is high or low, the voltage can be output appropriately. The voltage amplitude of the signal for turning the switch on and off can be reduced, so power consumption is reduced. The power consumption can be reduced.

[0111] When using a transistor as a switch, the switch is connected to the input terminal (source or The output terminal (the other of the source or drain) and the terminal that controls conduction On the other hand, when a diode is used as a switch, In some cases, the switch does not have a terminal that controls conduction. Using diodes as switches rather than capacitors reduces the amount of wiring required to control the terminals. It is possible to do so.

[0112] In Figure 8, an example is shown in which the switch is realized using an N-channel transistor. One aspect of the embodiment of the invention is not limited to this. 2A. The switch 118 is realized by using a transistor 118A. A wiring 325 is connected to the gate of the transistor 312A. A wire 326 is connected to the gate of the resistor 118A.

[0113] The transistor 312A controls the conduction state between the wiring 102 and the gate of the transistor 108. Alternatively, the transistor 312A may be used to select a pixel. Alternatively, the transistor 312A may function to output a video signal to the Therefore, the transistor 3 has a function of controlling whether or not to supply the 12A is at least one of a selection transistor, a switching transistor, etc. It has the function.

[0114] The wiring 325 is a signal that controls the conduction state between the wiring 102 and the gate of the transistor 108. Alternatively, the wiring 325 has a function of supplying or transmitting a signal. It has a function of being able to supply or transmit a signal for selecting a pixel, or The wiring 325 supplies or transmits a signal that controls whether or not a video signal is supplied to the pixel. Therefore, the wiring 325 can be used as a selection wiring, a selection gate, At least one function such as a port wiring, a wiring for switching, a gate wiring for switching, etc. It has.

[0115] The transistor 118A controls the conduction state between the wiring 124 and the gate of the transistor 108. Alternatively, the transistor 118A may have a lighting function. The transistor 11 has a function of being able to select whether or not to operate the transistor 11. 8A indicates whether a potential is supplied to the pixel to operate the transistor 108 in the linear region. Alternatively, the transistor 118A has a function of controlling the It has a function to control whether or not to initialize the master 108. The transistor 118A has a function of controlling whether or not the lighting function is realized. Alternatively, transistor 118A supplies a voltage to the gate of transistor 108. Therefore, the transistor 118A has a function of controlling whether or not the transistor 118A is turned on. Control transistors, operation control transistors, function switching transistors, initialization transistors The semiconductor device has at least one function, such as a transistor.

[0116] The wiring 326 is a signal that controls the conduction state between the wiring 124 and the gate of the transistor 108. Alternatively, the wiring 326 may have a function of supplying or transmitting a signal. A function capable of providing or transmitting a signal to select whether or not a lighting function is to be operated Alternatively, the wiring 326 may be used to operate the transistor 108 in a linear region. The signal that controls whether or not a potential for the pixel is supplied to the pixel can be supplied or transmitted. Alternatively, the wiring 326 has a function of determining whether the transistor 108 is initialized. It has the function of supplying or transmitting a signal to control the Line 326 provides or conveys a signal that controls whether or not the lighting function is realized. Alternatively, the wiring 326 can supply power to the gate of the transistor 108. It has the function of supplying or transmitting a signal that controls whether or not pressure is supplied. Therefore, the wiring 326 is a control wiring, a control gate wiring, an operation control wiring, an operation Control gate wiring, function switching wiring, function switching gate wiring, initialization wiring, initial The gate wiring for the gate electrodes has at least one function.

[0117] Here, FIG. 8 shows a circuit diagram for one pixel. FIG. 9 shows a block diagram of the entire light-emitting device. In the pixel section 501, pixels are arranged in a matrix. The pixels are arranged in a matrix. A driving circuit is arranged around the pixel portion 501. For example, a gate line driving circuit 503A and a gate line driving circuit 503B are arranged. However, the number of gate line driving circuits may be one or three or more. For example, In the case of FIG. 8, one of the wiring 325 and the wiring 326 is connected to the gate line driving circuit 503A. The other of the wiring 325 and the wiring 326 is connected to the gate line driving circuit 503B. Alternatively, the wiring 326 is connected to each other across all pixels and is not connected to the gate line driving circuit. In that case, for example, a pulse signal may be output to the wiring 326. In FIG. 9, a circuit having a function of enabling the pixel unit 501 to be connected to the upper side is shown. For example, a video line driving circuit 502 is arranged. For example, in the case of FIG. is connected to a video line driver circuit 502 .

[0118] Next, a timing chart of the wiring 325 and the wiring 326 in each row will be shown. Here, we will explain the timing chart for the display function. For simplicity, the timing chart is shown up to the third line. As shown in FIG. 10A, the first row of wiring 325(1) and the second row of wiring 325(2) are (2), the third row of wiring 325(3), and so on. A selection signal is input. Meanwhile, the first row wiring 326(1) and the second row wiring 326(2) ), and the third row wiring 326(3) is not selected and remains in the unselected state.

[0119] Next, a timing chart in the second operation mode will be described. This corresponds to a timing chart for implementing the above function. The first row is wiring 326(1), the second row is wiring 326(2), and the third row is wiring 326(3). In other words, the selection signal is input one row at a time. The line 325(1), the second line 325(2), and the third line 325(3) are selected. The selected item remains unselected.

[0120] In this manner, the display function and the illumination function can be switched between each other.

[0121] In addition, when realizing the lighting function, since it is not necessary to display an image, the wiring 326 is not necessarily required. It is not necessary to scan each row one by one. Therefore, all the rows of wiring 326 are selected at once. Alternatively, the wire 326 may be scanned once and then immediately thereafter. In such a case, the timing chart in the second operation mode is shown in FIG. The figures are shown in (A) and (B) of Fig. 11. In (A) of Fig. 11, the image is scanned once, and then the image is not scanned immediately afterwards. FIG. 11B is a timing chart showing the second operation mode when scanning is not performed. Now, the timing in the second operation mode when all the lines 326 in the row are simultaneously selected is as follows: In this case, as shown in FIG. 11(B), in the second operation mode, In this case, the wiring 326 does not need to be scanned row by row, so all the rows of the wiring 326 are connected to each other. It may be continued.

[0122] In FIG. 11B, all the lines 326 are selected. In FIG. 12A, Alternatively, all rows may be selected for each frame period as shown in FIG. For example, you may select it once. If you want to realize the lighting function, you need to display an image. Therefore, there is no need to rewrite the signal. Therefore, you can select it only once and then select it again. However, once the signal for each pixel is changed to realize the display function, If you rewrite it, when you want to enter the mode to realize the lighting function again, select the wiring 326. You need to reselect.

[0123] In FIG. 8, an example in which the transistor 118A is used as a switch is shown. One aspect of the embodiment of the present invention is not limited to this. For example, the switch 118 may be a diode. For example, as shown in FIG. 13, a diode-connected transistor may be used. This may be realized by using the transistor 118B and the wiring 326A. Just operate it in the same way as 26.

[0124] In FIG. 8 and other figures, an example in which the transistor 108 is a P-channel type is shown. One aspect of the embodiment is not limited to this. As in FIG. 3(C) and FIG. 3(D), each wiring By reversing the magnitude relationship of the potentials of the light emitting element 106A or by reversing the orientation of the light emitting element 106A, The transistor 108 can be operated in the same manner even if it is an N-channel type. An example circuit is shown in FIG.

[0125] This embodiment may be modified, added, revised, or deleted in part or in whole from other embodiments. , application, superordinate conception, or subordinate conception. Any part or all of the above may be freely combined with any part or all of the other embodiments. It can be applied or substituted.

[0126] (Embodiment 3) In this embodiment, another specific example of a light-emitting device according to one embodiment of the present invention and a driving method thereof will be described. Reveal.

[0127] FIG. 15 shows another example of a specific circuit using the circuit of FIG. 1(A). The wiring 102 is connected to the source of the transistor 108 via the switch 112. The switch 114 is connected between the source of the transistor 108 and the wiring 104. A switch 116 is connected between the gate and drain of the transistor 108. The switch 120 is connected between the drain of the transistor 108 and the load 106. is connected in between.

[0128] The wiring 102 has a function of supplying and transmitting a video signal. In addition, a precharge signal or an initialization signal may be supplied to the wiring 102. The wiring 102 has a function of supplying and transmitting a signal to the switch 112. Therefore, the wiring 102 includes a video signal line, a source signal line, an initialization signal line, etc. Each of the above has at least one function.

[0129] The wiring 104 can supply or transmit a voltage or current to the transistor 108. Alternatively, the wiring 104 has a function of supplying or transmitting a voltage or a current to the load 106. The wiring 104 has a function of supplying a reverse bias voltage to the load 106. The wiring 104 has a function of supplying or transmitting pressure. It has a function of supplying and transmitting voltage and current to the switch 114. Alternatively, the wiring 104 may supply or transmit a voltage or a current to the capacitor 110. Therefore, the wiring 104 can be used as a current supply line, a power supply line, a capacitance line, etc. Note that the potential of the wiring 104 is constant. However, one aspect of the embodiment of the present invention is not limited to this, and a pulse signal may be provided. This may also be the case.

[0130] The wiring 124 can supply or transmit a voltage to the gate of the transistor 108. Alternatively, the wiring 124 can control the operating region of the transistor 108. It has the function of supplying or transmitting a potential that can be used. Line 124 provides or conveys a potential to initialize transistor 108. Alternatively, the wiring 124 can turn on the transistor 108. It has a function of supplying or transmitting a potential such as that The line 124 is a functional line capable of supplying or transmitting a potential to realize a lighting function. Alternatively, the wiring 124 has a function of supplying or transmitting a voltage or a current to the capacitor 110. Alternatively, the wiring 124 may be connected to the switch 118. The wiring 12 has a function of supplying and transmitting voltage and current. 4 is at least one of a power supply line, an initialization line, a lighting function control line, an operating area control line, etc. Note that the potential of the wiring 124 is preferably constant. However, one aspect of the embodiment of the present invention is not limited to this, and a pulse signal may be supplied. .

[0131] The transistor 108 can control the amount of current flowing through the load 106. Therefore, the transistor 108 functions as a drive transistor, a current control transistor, It has at least one function, such as a register.

[0132] The switch 112 controls the conduction state between the wiring 102 and the source of the transistor 108. Alternatively, the switch 112 has a function of selecting a pixel. Alternatively, the switch 112 has a function of supplying a video signal to the pixel or not. Therefore, the switch 112 is a selection switch. , a switching switch, or the like.

[0133] The switch 118 controls the conduction state between the wiring 124 and the gate of the transistor 108. Alternatively, the switch 118 may have a function to operate a lighting function or Alternatively, the switch 118 may be a transistor. It is possible to control whether or not a potential for operating the photodiode 108 in a linear region is supplied to the pixel. Alternatively, the switch 118 has a function of initializing the transistor 108 or Alternatively, the switch 118 may be a transistor. The control circuit 104 has a function of controlling whether the starter 108 is turned on or not. The switch 118 has a function of controlling whether or not the lighting function is realized. Alternatively, the switch 118 determines whether or not a voltage is supplied to the gate of the transistor 108. Alternatively, the switch 118 has a function of controlling the capacitance element 110. It has a function that can control whether or not the terminal is in a floating state. The switch 118 is a control switch, an operation control switch, a function changeover switch, etc. , an initialization switch, or the like.

[0134] The switch 120 controls the conduction state between the load 106 and the drain of the transistor 108. Alternatively, the switch 120 may be configured to allow current to flow through the load 106. Therefore, the switch 120 has a function of controlling whether or not the switch 120 is turned on. The light emitting device has at least one function such as a switch, a light emission control switch, etc.

[0135] The switch 114 controls the conduction state between the wiring 104 and the source of the transistor 108. Alternatively, the switch 114 has a function of allowing a current to flow through the load 106. Alternatively, the switch 114 may be a transistor. The switch 108 has a function of controlling whether or not a current flows through the switch 108. The switch 114 has at least one function such as a control switch or a light emission control switch. is.

[0136] The switch 116 is connected between the gate of the transistor 108 and the drain of the transistor 108. Alternatively, the switch 116 has a function of controlling the conductive state of the capacitance The conduction state between the terminal of element 110 and the drain of transistor 108 can be controlled. Alternatively, the switch 116 has a function of setting the terminal of the capacitance element 110 in a floating state. The switch 11 has a function of controlling whether or not the switch 11 is in the locking state. 6 is a function that can control the operation of obtaining the threshold voltage of the transistor 108 Therefore, the switch 116 is a control switch and a threshold voltage acquisition switch. , a capacity control switch, or the like.

[0137] As in FIG. 4, the wiring 104 is divided into wiring 104A, wiring 104B, etc. The circuit diagram for this case is shown in Figure 16.

[0138] The wiring 104A can supply and transmit a voltage or a current to the transistor 108. Alternatively, the wiring 104A has a function of supplying a voltage or a current to the load 106. Alternatively, the wiring 104A may be connected to the switch 11. It has a function of supplying or transmitting voltage or current to 4. Line 104A can supply or convey a reverse bias voltage to load 106. Alternatively, the wiring 104B has a function of supplying a voltage or a current to the capacitor 110. Therefore, the wiring 104A has a function of being able to transmit current. The wiring 104B has at least one function, such as a power supply line, or a capacitance line. , a power supply line, etc. It is desirable for the potential of B to be constant. However, one aspect of the embodiment of the present invention is to In particular, the potential of the wiring 104B is changed. This makes it possible to control the gate potential of the transistor 108 by utilizing capacitive coupling. Yes, it is possible.

[0139] Note that the wiring 124 may be connected to the wiring 122 as in FIGS. The circuit diagram for this case is shown in FIG.

[0140] Next, the driving method will be described. First, the driving method in the first operation mode will be described. Here, this corresponds to a driving method for implementing a display function. First, as shown in FIG. As shown, switch 118 is turned on and transistor 108 is initialized. As a result, the potential of the wiring 124 is input to the gate of the transistor 108 and the capacitor 110. As a result, the transistor 108 is turned on. This corresponds to an initialization operation for acquiring the threshold voltage. Next, as shown in FIG. When a pixel is selected, the switch 112 is turned on, and a video signal is transmitted from the wiring 102 to the transistor 114. The voltage is supplied to the source of the resistor 108. The switch 116 is in the on state. Since the transistor 118 is in an off state, the charge of the capacitor 110 is transferred to the When the discharge stops or when the discharge becomes small, That is, when the transistor 108 is turned off or when the transistor 108 is turned on, When the transistor 108 is close to the off state, the threshold voltage of the transistor 108 is acquired. In this state, the gate-source voltage of the transistor 108 is equal to or greater than the threshold voltage of the transistor 108. Then, as shown in FIG. 17(C), the pixel is deselected and The switches 112 and 116 are turned off, and the capacitance element 110 is charged in response to the video signal. The voltage is maintained. Switch 112 is turned off and switch 114 is turned on. Therefore, the connection destination of the source of the transistor 108 is changed from the wiring 102 to the wiring 104. This changes the potential of the source of the transistor 108. The potential of the transistor does not change because it is held by the capacitance element 110. The gate-source voltage of transistor 108 also changes. is the sum of the voltage of the video signal and the threshold voltage of the transistor 108. Because the switches 114 and 120 are on, the load 106 is connected to the transistor The current is supplied by the 08. The magnitude of the current varies depending on the magnitude of the video signal. At that time, the variation in the threshold voltage of the transistor 108 is The current value is set so as to minimize the influence.

[0141] Next, we will explain the driving method in the second operation mode. First, as shown in FIG. 17(D), the switch 118 is turned on. The potential of the wiring 124 is supplied to the gate of the transistor 108. Since the absolute value of the gate-source voltage of 08 is large, a large current flows through the load 106. Next, the switch 118 may be turned off as shown in FIG. In this case, the potential of the wiring 124 is held in the capacitor 110, and the capacitance of current is supplied from transistor 108 to load 106 .

[0142] Next, FIG. 18 shows a circuit example in which the switch in FIG. 15 is realized by a transistor. .

[0143] FIG. 18 shows an example in which the switch is realized by a P-channel transistor. However, One aspect of the embodiment of the present invention is not limited to this. The switch 112 may be a transistor 112A. The switch 118 is realized by using a transistor 118A. The switch 114 is realized by using a transistor 114A. The switch 116 is realized by using a transistor 116A. The gate of the transistor 112A and the transistor The gate of the transistor 116A is connected to a wiring 125. A wiring 126 is connected to the gate of the transistor 114A. A wiring 127 is connected to the gate of 0A.

[0144] The gate of the transistor 112A and the gate of the transistor 116A are connected to the same wiring. However, one aspect of the embodiment of the present invention is not limited to this. The gate of the transistor 114A and the gate of the transistor 120A may be connected to each other. Although the ports are connected to the same wiring, one aspect of the embodiment of the present invention is not limited to this. They may be connected to separate wires.

[0145] The wiring 102 has a function of supplying and transmitting a video signal. In addition, a precharge signal or an initialization signal may be supplied to the wiring 102. The wiring 102 can supply or transmit a signal to the transistor 112A. Therefore, the wiring 102 is a video signal line, a source signal line, an initialization signal line, The line has at least one function.

[0146] The wiring 104 can supply or transmit a voltage or current to the transistor 108. Alternatively, the wiring 104 has a function of supplying a voltage or a current to the light emitting element 106A. The wiring 104 has a function of transmitting and receiving light to and from the light emitting element 106A. It has a function of supplying or transmitting a reverse bias voltage. Line 104 can supply or convey voltage and current to transistor 114A. Alternatively, the wiring 104 has a function of supplying a voltage or a current to the capacitor 110. Therefore, the wiring 104 can be used as a current supply line, a current The wiring 104 has at least one function such as a power supply line, a capacitance line, etc. However, one aspect of the embodiment of the present invention is not limited thereto. , a pulse signal may be provided.

[0147] The wiring 124 can supply or transmit a voltage to the gate of the transistor 108. Alternatively, the wiring 124 can control the operating region of the transistor 108. It has the function of supplying or transmitting a potential that can be used. Line 124 provides or conveys a potential to initialize transistor 108. Alternatively, the wiring 124 can turn on the transistor 108. It has a function of supplying or transmitting a potential such as that The line 124 is a functional line capable of supplying or transmitting a potential to realize a lighting function. Alternatively, the wiring 124 has a function of supplying or transmitting a voltage or a current to the capacitor 110. Alternatively, the wiring 124 may function as a A has the function of supplying and transmitting voltage and current to A. The wires 124 are at least a power supply line, an initialization line, a wiring for controlling a lighting function, a wiring for controlling an operating area, etc. Note that the potential of the wiring 124 is desirably constant. However, one aspect of the embodiment of the present invention is not limited to this, and may be a case where a pulse signal is supplied. There are also.

[0148] The transistor 108 controls the amount of current flowing through the light emitting element 106A. Therefore, the transistor 108 functions as a drive transistor, a current control transistor, The semiconductor device has at least one function, such as a transistor.

[0149] The transistor 112A controls the conduction state between the wiring 102 and the source of the transistor 108. Alternatively, the transistor 112A may be used to select a pixel. Alternatively, the transistor 112A has a function of outputting a video signal to the display. Therefore, the transistor 1 has a function of controlling whether or not the voltage is supplied to the transistor 1. 12A is at least one of a selection transistor, a switching transistor, etc. It has the function.

[0150] The transistor 118A controls the conduction state between the wiring 124 and the gate of the transistor 108. Alternatively, the transistor 118A may have a lighting function. The transistor 11 has a function of being able to select whether or not to operate the transistor 11. 8A indicates whether a potential is supplied to the pixel to operate the transistor 108 in the linear region. Alternatively, the transistor 118A has a function of controlling the It has a function to control whether or not to initialize the master 108. The transistor 118A can control whether the transistor 108 is turned on or not. Alternatively, the transistor 118A may have a function of realizing a lighting function. Alternatively, the transistor 118A has a function of controlling the The control circuit 104 has a function of controlling whether or not a voltage is supplied to the gate of the transistor 108. Alternatively, the transistor 118A may set the terminal of the capacitance element 110 in a floating state. Therefore, the transistor 118A has a function of controlling whether or not the control transistors for operation control, transistors for function switching, transistors for initialization The input / output terminal has at least one function such as a transistor.

[0151] Transistor 120A is a conductor between light emitting element 106A and the drain of transistor 108. The transistor 120A has a function of controlling the on / off state. It has a function of controlling whether or not a current flows through the optical element 106A. The transistor 120A is at least one of a control transistor, a light emission control transistor, etc. It also has one function.

[0152] The transistor 114A controls the conduction state between the wiring 104 and the source of the transistor 108. Alternatively, the transistor 114A has a function of controlling the light emitting element 1. It has a function to control whether or not current flows to the 06A. The function of the control circuit 114A is to control whether or not a current flows through the transistor 108. Therefore, the transistor 114A is a control transistor, a light emission control transistor, It has at least one function such as a register.

[0153] Transistor 116A is connected to the gate of transistor 108 and the drain of transistor 108. The transistor 11 has a function of controlling the conduction state between the transistor 11 and the 6A controls the conduction state between the terminal of the capacitance element 110 and the drain of the transistor 108. Alternatively, the transistor 116A has a function of being able to It has a function to control whether the terminals are in a floating state or not. Alternatively, transistor 116A may control the operation of obtaining the threshold voltage of transistor 108. Therefore, the transistor 116A has a function of controlling the At least one of a transistor for controlling a capacitance, a transistor for obtaining a threshold voltage, a transistor for controlling a capacitance, etc. It has two functions.

[0154] The wiring 125 is a signal that controls the conduction state between the wiring 102 and the source of the transistor 108. Alternatively, the wiring 125 has a function of supplying or transmitting a signal. It has a function of being able to supply or transmit a signal for selecting a pixel, or The wiring 125 supplies or transmits a signal that controls whether or not a video signal is supplied to the pixel. Alternatively, the wiring 125 can be used as a A signal is provided to control the conduction state between the gate and drain of transistor 108. Alternatively, the wiring 125 can reach the capacitor 110. Providing or transmitting a signal that controls the state of conduction between the terminal and the drain of transistor 108 Alternatively, the wiring 125 can be connected to the end of the capacitor 110. It is possible to provide or transmit a signal that controls whether the Alternatively, the wiring 125 has a function of lowering the threshold voltage of the transistor 108. It has the function of supplying or transmitting signals that control the operation to be acquired. Therefore, the wiring 125 is a control wiring, a threshold voltage acquisition wiring, a capacitance control wiring, a selection wiring, wiring, switching wiring, control gate wiring, threshold voltage acquisition gate wiring, capacitance At least one of a control gate wiring, a selection gate wiring, a switching gate wiring, etc. It has two functions.

[0155] The wiring 126 is a signal that controls the conduction state between the wiring 124 and the gate of the transistor 108. Alternatively, the wiring 126 may have a function of supplying or transmitting a signal. A function capable of providing or transmitting a signal to select whether or not to operate a lighting function Alternatively, the wiring 126 has a function of operating the transistor 108 in a linear region. The signal that controls whether or not a potential for the pixel is supplied to the pixel can be supplied or transmitted. Alternatively, the wiring 126 has a function of determining whether the transistor 108 is initialized. It has the function of supplying or transmitting a signal to control the Line 126 provides or transmits a signal that controls whether transistor 108 is turned on. Alternatively, the wiring 126 may have a function of realizing a lighting function. The device has the ability to provide or transmit a signal that controls whether or not the device is turned on. Alternatively, the wiring 126 controls whether the terminal of the capacitor 110 is in a floating state. Alternatively, the wiring 12 has a function of supplying or transmitting a signal to the 6 supplies a signal that controls whether or not a voltage is supplied to the gate of the transistor 108. Therefore, the wiring 126 is a control wiring, an operating wiring, Wiring for operation control, wiring for function switching, wiring for initialization, wiring for control gate, wiring for operation control gate At least one of the following functions is provided: It has.

[0156] The wiring 127 controls the conduction state between the light emitting element 106A and the drain of the transistor 108. It has the function of supplying or transmitting signals that control the 27 is a circuit for supplying or transmitting a signal for controlling whether or not a current is passed through the light emitting element 106A. Therefore, the wiring 127 is a control wiring, a light emission control wiring, , a control gate wiring, a light emission control gate wiring, or the like.

[0157] Here, FIG. 18 shows a circuit diagram for one pixel. 9, pixels are arranged in a matrix in a pixel section 501. For example, in the case of FIG. 18, the wiring 125 The wiring 126 is connected to the gate line driving circuit 503A, and the wiring 127 is connected to the gate line driving circuit It is connected to path 503B.

[0158] Next, a timing chart of the wirings 125, 126, and 127 in each row will be shown. The timing chart in the first operation mode will be described. As shown in FIG. 19, the first line wiring 125 The wires are selected one by one, starting from (1) to the Nth wire 125(N). Similarly, the selection signal is input from the wiring 126(1) in the first row to the wiring 126(2) in the Nth row. 6(N), one row at a time. In other words, the selection signal is input one row at a time. Similarly, the wiring 127(1) in the first row is selected, one row at a time, from the wiring 127(1) in the first row to the wiring 127(N) in the Nth row. In other words, the selection signal is input one row at a time.

[0159] Next, a timing chart in the second operation mode will be described. This corresponds to the timing chart for achieving this function. The wiring is selected one row at a time, starting from 126(1) to the Nth row wiring 126(N). The selection signal is input one row at a time. Similarly, the selection signal is input from the wiring 127(1) of the first row to the wiring 127(2) of the Nth row. The selection signal is input one row at a time to the line 127(N). On the other hand, the wiring 125(1) in the first row to the wiring 125(N) in the Nth row are not selected. , and remains unselected.

[0160] In this manner, the display function and the illumination function can be switched between each other.

[0161] In addition, when realizing the lighting function, since it is not necessary to display an image, the wiring 126 is not necessarily required. It is not necessary to scan the lines one by one. Alternatively, the line 126 can be scanned once, There is no need to scan immediately after that. Therefore, all the lines 126 are simultaneously selected. In this case, the wiring 125 is in a non-selected state for all rows, and the wiring 127 is in a selected state for all rows. It is desirable to set the timing chart as follows. The route is shown in Figure 21.

[0162] In FIG. 21, all the rows of wiring 126 are selected. However, as shown in FIG. 22, All rows may be selected every frame period, or only once, as shown in FIG. If you want to realize the lighting function, you do not need to display an image, so you can write a signal. Therefore, you can select it once and then not select it again. However, once the signal of each pixel is rewritten to realize the display function, If the user wishes to enter a mode for realizing the lighting function again, the wiring 126 must be selected again. do.

[0163] In FIG. 18, a transistor 118A is used as a switch. In one embodiment, the present invention is not limited to this. For example, the switch 118 may be implemented using a diode. For example, as shown in FIG. B and the wiring 126A. The wiring 126A operates in the same manner as the wiring 126. Just let them make it.

[0164] In FIG. 18 and other figures, an example in which the transistor 108 is a P-channel type is shown. One aspect of the present embodiment is not limited to this. By reversing the magnitude relationship of the potentials of the lines or reversing the orientation of the light emitting element 106A, The transistor 108 can be operated in the same manner even if it is an N-channel type. An example of the circuit is shown in FIG.

[0165] Next, in order to realize the timing charts of Figs. 19, 20, 21, 22, 23, etc. An example of the gate line driving circuit 503A for this purpose is shown in FIG. 26 and FIG. 27. For example, the circuit 503B may have a circuit configuration similar to that of the gate line driving circuit 503A. stomach.

[0166] In FIG. 26, the gate line driving circuit 503A includes a circuit 705 and a circuit 703. 705 has, for example, a shift register circuit or a decoder circuit. It has the function of outputting a pulse signal that selects one row at a time. Line 701(1), second row wiring 701(2), third row wiring 701(3), fourth row wiring 701(4), etc., sequentially output pulse signals. The signal is input to the circuit 703. The wiring 702 is connected to the circuit 703. The signal of the wiring 125 of each row is controlled according to the circuit 703A. (1), circuit 703A(2), circuit 703A(3), circuit 703A(4), etc. are connected. These circuits include, for example, an OR circuit. Using at least one of the following circuits: ND, NOR, NAND, and NOT circuits It is also possible to realize a similar function.

[0167] On the other hand, in FIG. 27, the wiring 126 in each row is provided with a circuit 703B(1), a circuit 703B(2), Circuit 703B(3), circuit 703B(4), etc. are connected. The AND circuit is an AND circuit. The AND circuit can be an OR circuit, a NOR circuit, or an NA The same function can be realized by using at least one of an ND circuit and a NOT circuit. It is possible.

[0168] In FIG. 15, the switch 118 is connected to the gate of the transistor 108. Although a circuit example has been shown, one aspect of the embodiment of the present invention is not limited to this. The transistor 118 may be connected to the drain of the transistor 108. An example and how it works is shown in FIG.

[0169] First, a driving method in the first operation mode will be described. First, as shown in FIG. 28(A), the switch 118 and the switch This causes the line 116 to turn on and the transistor 108 to initialize. The potential of 24 is input to the gate and drain of the transistor 108 and the capacitor 110. As a result, the transistor 108 is turned on. This corresponds to an initialization operation for acquiring a new voltage value. Next, as shown in FIG. 28(B), When the element is selected, switch 112 is turned on, and the video signal is transmitted from line 102 to the transistor. The switch 116 is in the on state, and the switch Since the capacitor 118 is in the off state, the charge in the capacitor element 110 is discharged. When the discharge stops or becomes weak, the threshold voltage of the transistor 108 The acquisition is then completed. Then, as shown in FIG. 28(C), the pixel is deselected and switch 1 12 and the switch 116 are turned off, and a voltage corresponding to the video signal is held in the capacitance element 110. Since the switches 114 and 120 are on, the load 106 is A current is provided by resistor 108, the magnitude of which depends on the magnitude of the video signal. At that time, the magnitude of the threshold voltage of the transistor 108 increases The current value is set so as to reduce the effect of fluctuations.

[0170] Next, we will explain the driving method in the second operation mode. First, as shown in FIG. 28(D), the switch 118 and the switch The switch 116 is turned on, and a voltage is applied to the gate and drain of the transistor 108 and the capacitance element 110. The potential of the wiring 124 is supplied. The switch 114 is on, and the gate of the transistor 108 is turned on. Since the absolute value of the source-to-source voltage is large, a large current flows through the load 106. Next, as shown in FIG. 28(C), the switches 118 and 116 may be turned off. In that case, the potential of the wiring 124 is held in the capacitor 110. A current of a given magnitude is provided from transistor 108 to load 106 .

[0171] This embodiment may be modified, added, revised, or deleted in part or in whole from other embodiments. , application, superordinate conception, or subordinate conception. Any part or all of the above may be freely combined with any part or all of the other embodiments. It can be applied or substituted.

[0172] (Embodiment 4) In this embodiment, another specific example of a method for driving a light-emitting device according to one embodiment of the present invention will be described. .

[0173] In the third embodiment, when the lighting function is realized, the switch 118 is turned on to turn on the transistor. In the present embodiment, the potential of the wiring 102 is controlled by An example of a driving method when controlled is shown below.

[0174] This will be explained using Figure 17.

[0175] First, a driving method in the first operation mode will be described. First, as shown in FIG. 17A, the switch 118 is turned on. This operation causes the potential of the wiring 124 to change to The voltage Vcc is input to the gate of the transistor 108 and the capacitance element 110. 8 is turned on. This is the initial step for obtaining the threshold voltage of the transistor 108. Next, as shown in FIG. 17B, a pixel is selected and the switch 11 2 is turned on, and the video signal is supplied from wiring 102 to the source of transistor 108. Since the switch 116 is in the ON state and the switch 118 is in the OFF state, The charge of the capacitance element 110 is discharged. Then, when the discharge stops or becomes small, When this occurs, acquisition of the threshold voltage of transistor 108 is complete.

[0176] At this time, the potential of the wiring 102 changes according to the image. The value of the potential when the gray level is the largest is SIGMIN, and the value of the potential when the gray level is the largest is SIGMAX. The absolute value of the gate-source voltage of the transistor 108 when the gradation is smallest is VGSMI N, the absolute value of the gate-source voltage of the transistor 108 when the gradation is the largest is V Here, when the transistor 108 is a P-channel type, the potential value S IGMIN is higher than the potential value SIGMAX. Therefore, the potential value of the wiring 102 is , is in the range of SIGMAX or more and SIGMIN or less. The absolute value of the gate-source voltage is equal to or higher than VGSMIN and equal to or lower than VGSMAX.

[0177] Then, as shown in FIG. 17C, the pixel is deselected and the switch 112 and the switch 1 Switch 116 is turned off, and a voltage corresponding to the video signal is held in capacitor 110. 4 and switch 120 are on, so the load 106 is The magnitude of the current is proportional to the magnitude of the video signal. At this time, the influence of the variation in the threshold voltage of the transistor 108 is small. The current value is such that

[0178] Next, we will explain the driving method in the second operation mode. First, as shown in FIG. 17A, the switch 118 is turned on. This operation causes the potential of the wiring 124 to change to The voltage Vcc is input to the gate of the transistor 108 and the capacitance element 110. Next, as shown in FIG. 17B, the pixel is selected and switch 1 12 is turned on, and a predetermined signal is supplied from wiring 102 to the source of transistor 108. Since the switch 116 is in the ON state and the switch 118 is in the OFF state, The charge in the capacitance element 110 is discharged. Then, when the discharge stops or When this occurs, the acquisition of the threshold voltage of transistor 108 is completed.

[0179] At this time, the potential value of the wiring 102 is the potential value SIGMAX when the gray scale is the largest. Therefore, the potential value of the wiring 102 is lower than the potential value SIGMA X. Also, the absolute value of the gate-source voltage of the transistor 108 is The value is greater than VGSMAX.

[0180] Then, as shown in FIG. 17C, the pixel is deselected and the switch 112 and the switch 1 Switch 116 is turned off, and a voltage corresponding to a predetermined signal is held in capacitor 110. 4 and switch 120 are on, so the load 106 is The current is supplied at a very large value. The current value is such that the optical element is affected by degradation. 8 is in a state of being driven at a constant voltage.

[0181] By using such a driving method, it is possible to control the potential of the wiring 102 in each column. Therefore, the potential of the wiring 102 in a certain column is set to a potential that performs constant voltage driving. In other words, the potential of the wiring 102 in another column can be set to a potential that puts the device in a non-light emitting state. Alternatively, the potential of the wiring 102 of another column may be set to a potential for constant current driving. This means that each pixel in a row can be in a different state.

[0182] In this manner, the display function and the illumination function can be switched between each other.

[0183] Next, another example will be described with reference to Fig. 7. In Fig. 7, the switch 118 and the wiring 124 does not necessarily have to be provided.

[0184] First, a driving method in the first operation mode will be described. This corresponds to the driving method when a pixel is selected and switched on as shown in FIG. The switch 312 is turned on, and the video signal is applied from the wiring 102 to the gate of the transistor 108. Supplied.

[0185] At this time, the potential of the wiring 102 changes according to the image. The value of the potential when the gray level is the largest is SIGMIN, and the value of the potential when the gray level is the largest is SIGMAX. The absolute value of the gate-source voltage of the transistor 108 when the gradation is smallest is VGSMI N, the absolute value of the gate-source voltage of the transistor 108 when the gradation is the largest is V Here, when the transistor 108 is a P-channel type, the potential value S IGMIN is higher than the potential value SIGMAX. Therefore, the potential value of the wiring 102 is , is in the range of SIGMAX or more and SIGMIN or less. The absolute value of the gate-source voltage is equal to or higher than VGSMIN and equal to or lower than VGSMAX.

[0186] Then, as shown in FIG. 7B, the pixel is deselected and the switch 312 is turned off. A voltage corresponding to the video signal is held in the capacitance element 110. A current is provided by the inverter 108, the magnitude of which depends on the magnitude of the video signal. It is the perfect size.

[0187] Next, we will explain the driving method in the second operation mode. This corresponds to the driving method when a pixel is selected and switched on as shown in FIG. The switch 312 is turned on, and a predetermined signal is applied from the wiring 102 to the gate of the transistor 108. Supplied.

[0188] At this time, the potential value of the wiring 102 is the potential value SIGMAX when the gray scale is the largest. Therefore, the potential value of the wiring 102 is lower than SIGMAX. The absolute value of the gate-source voltage of the transistor 108 is V It is larger than the GSMAX.

[0189] Then, as shown in FIG. 7B, the pixel is deselected and the switch 312 is turned off. A voltage corresponding to the signal is held in the capacitor 110. The load 106 is connected to a transistor 108. Therefore, a current is supplied. The magnitude of the current is very large. The current value is such that the light-emitting element is deteriorated. The capacitor 108 is in a state of being driven at a constant voltage.

[0190] By using such a driving method, it is possible to control the potential of the wiring 102 in each column. Therefore, the potential of the wiring 102 in a certain column is set to a potential that performs constant voltage driving. In other words, the potential of the wiring 102 in another column can be set to a potential that puts the device in a non-light emitting state. Alternatively, the potential of the wiring 102 of another column may be set to a potential for constant current driving. This means that each pixel in a row can be in a different state.

[0191] In this manner, the display function and the illumination function can be switched between each other.

[0192] In this way, by controlling the magnitude of the signal supplied from the wiring 102, the transistor As a result, the display function and the lighting function can be switched. Therefore, various pixel circuits can be operated in the same way. The function can be switched between the light function and the lighting function.

[0193] This embodiment may be modified, added, revised, or deleted in part or in whole from other embodiments. , application, superordinate conception, or subordinate conception. Any part or all of the above may be freely combined with any part or all of the other embodiments. It can be applied or substituted.

[0194] (Embodiment 5) In this embodiment, specific examples of electronic devices including a light-emitting device according to one embodiment of the present invention and an imaging element will be described. This article explains:

[0195] FIG. 29 shows an example of electronic device 601. FIG. 29(A) shows the front side of electronic device 601. FIG. 29(A) shows the top view of the electronic device 601, and FIG. 29(B) shows a cross-sectional view of the electronic device 601. FIG. 29(B) shows a cross-sectional view of the electronic device 601. Tablet-type mobile terminals, smartphones, mobile phones, portable computers, portable information terminals In the end, it will be equivalent to a portable e-book or a portable camera.

[0196] As shown in FIG. 29(A), the front surface of an electronic device 601 includes a display device 602 and a camera. A section 603 is provided.

[0197] As shown in FIG. 30(A), a camera unit 604 is provided on the back surface of an electronic device 601. There are.

[0198] Here, the light-emitting device described in the other embodiments can be used as the display device 602. Therefore, when performing normal work, the display device 602 is used for browsing, inputting, and Also, when taking pictures using the camera units 603 and 604, The display device 602 displays the shooting status and the image of the other party. Or, when taking pictures using the camera unit 603, it functions as lighting at other times. In other words, the display device 602 is used to illuminate the subject, and the display device 602 is used to take pictures using a flash or a strobe. In this way, when switching between the display function and the lighting function, By using the driving method described above, proper operation can be achieved, and the bright This allows the subject to be illuminated at a high degree, resulting in beautiful images. In this manner, the display function and the illumination function can be switched between each other.

[0199] This embodiment may be modified, added, revised, or deleted in part or in whole from other embodiments. , application, superordinate conception, or subordinate conception. Any part or all of the above may be freely combined with any part or all of the other embodiments. It can be applied or substituted.

[0200] (Embodiment 6) In this embodiment, examples of the structure of a transistor are shown in FIGS. The following description will be given with reference to FIG.

[0201] FIG. 31(A) shows an example of the structure of a top-gate transistor. FIG. 31(B) shows FIG. 31C shows an example of a bottom-gate transistor structure. 1 is an example of a structure of a transistor manufactured using the above method.

[0202] FIG. 31(A) shows a substrate 5260 and an insulating layer 5261 formed on the substrate 5260. , formed on an insulating layer 5261, and having regions 5262a, 5262b, 5262c, A semiconductor layer 5262 having regions 5262d and 5262e and a semiconductor layer 5262 covering the semiconductor layer 5262 The insulating layer 5263 is formed as described above, and a semiconductor layer 5262 and an insulating layer 5263 are formed on the insulating layer 5263. A conductive layer 5264 is formed over the insulating layer 5263 and the conductive layer 5264 and has an opening. and a conductive layer 5265 formed on the insulating layer 5265 and in the opening of the insulating layer 5265. A conductive layer 5266 and an insulating layer 5265 are formed on the conductive layer 5266 and on the insulating layer 5265 and have an opening. and a conductive layer formed on the insulating layer 5267 and in the opening of the insulating layer 5267. A layer 5268 is formed on the insulating layer 5267 and on the conductive layer 5268, and has an opening. An insulating layer 5269 and a light-emitting layer formed on the insulating layer 5269 and in the opening of the insulating layer 5269 5270, and a conductive layer 5271 formed on the insulating layer 5269 and on the light-emitting layer 5270. Shows.

[0203] FIG. 31B shows a substrate 5300 and a conductive layer 5301 formed on the substrate 5300. 5302 formed to cover the conductive layer 5301; A semiconductor layer 5303a formed on the semiconductor layer 5302 and a A semiconductor layer 5303b and a conductive layer formed on the semiconductor layer 5303b and on the insulating layer 5302. A conductive layer 5304 and a conductive film 5305 having an opening are formed on the insulating layer 5302 and the conductive layer 5304. and a conductive layer 5305 formed on the insulating layer 5305 and in the opening of the insulating layer 5305. layer 5306 and a liquid crystal layer 5307 disposed on the insulating layer 5305 and on the conductive layer 5306. 53 and a conductive layer 5308 formed on the liquid crystal layer 5307.

[0204] FIG. 31C shows a semiconductor substrate 5352 having a region 5353 and a region 5355, An insulating layer 5356 formed on the conductive substrate 5352 and a An insulating layer 5354 is formed on the insulating layer 5356, a conductive layer 5357 is formed on the insulating layer 5356, and the insulating layer 53 54, an insulating layer 5356, and a conductive layer 5357 are formed on the insulating layer 53 having an opening. 58, a conductive layer 5359 formed on the insulating layer 5358 and in the opening of the insulating layer 5358, Thus, transistors are formed in the regions 5350 and 5351. .

[0205] The insulating layer 5261 can function as a base film. The insulating layer 5263 and the insulating layer 5302 function as an isolation layer (for example, a field oxide film). The insulating layer 5356 can function as a gate insulating film. The conductive layer 5301 and the conductive layer 5357 can function as gate electrodes. The layer 5265, the insulating layer 5267, the insulating layer 5305, and the insulating layer 5358 are an interlayer film or a flat film. The conductive layer 5266, the conductive layer 5304, and the conductive layer 5359 can function as wiring, an electrode of a transistor, an electrode of a capacitor, etc. The conductive layer 5268 and the conductive layer 5306 may be used as a pixel electrode, a reflective electrode, or the like. The insulating layer 5269 can function as a partition. The conductive layer 5271 and the conductive layer 5308 function as a counter electrode, a common electrode, or the like. It is possible.

[0206] Examples of the substrate 5260 and the substrate 5300 include a glass substrate, a quartz substrate, and a silicon substrate. Examples of the substrate include a plate, a metal substrate, a stainless steel substrate, and a flexible substrate. , barium borosilicate glass, aluminoborosilicate glass, etc. Examples of flexible substrates Examples include polyethylene terephthalate (PET), polyethylene naphthalate (PEN ), plastics such as polyethersulfone (PES), or acrylic. Flexible synthetic resins are also used. Other examples include laminated films (polypropylene, esters, polyvinyl fluoride, polyvinyl chloride, etc.), paper containing fibrous materials, base film films (polyester, polyamide, inorganic vapor deposition film, paper, etc.).

[0207] The semiconductor substrate 5352 is, for example, a single crystal Si having n-type or p-type conductivity. A substrate can be used. However, it is not limited to this, and a substrate similar to the substrate 5260 can be used. The region 5353 may be formed by, for example, forming a semiconductor substrate 5352 with an impurity. For example, if the semiconductor substrate 5352 is a p-type If it has a conductivity type, the region 5353 has an n-type conductivity and functions as an n-well. On the other hand, when the semiconductor substrate 5352 has an n-type conductivity, the region 5353 has a p-type conductivity. The region 5355 has a p-well and functions as a p-well. 352 and function as a source region or a drain region. The conductive substrate 5352 may have LDD regions formed therein.

[0208] An example of the insulating layer 5261 is silicon oxide (SiO x ), silicon nitride (SiN x ), oxidation Silicon nitride (SiO x N y )(x>y), silicon oxynitride (SiN x O y )(x>y) The insulating layer 5261 is a two-layer structure. As an example of the structure, a silicon nitride film is provided as the first insulating film, and a silicon nitride film is provided as the second insulating film. A silicon oxide film can be provided as the insulating film. The insulating layer 5261 is provided in a three-layer structure. In one example, a silicon oxide film is provided as the first insulating film, and a silicon dioxide film is provided as the second insulating film. It is possible to provide a silicon nitride film as the second insulating film and a silicon oxide film as the third insulating film.

[0209] An example of the semiconductor layer 5262, the semiconductor layer 5303a, and the semiconductor layer 5303b is a non- Single crystal semiconductors (amorphous silicon, polycrystalline silicon, microcrystalline silicon, etc.) ), single crystal semiconductor, compound semiconductor or oxide semiconductor (ZnO, InGaZnO, Si Ge, GaAs, IZO, ITO, SnO), organic semiconductors, or carbon nanotubes There are some.

[0210] For example, the region 5262a is an intrinsic semiconductor layer 5262 to which no impurities are added. However, the region 5262a is in a state where a small amount of impurity is added, and the region 5262a functions as a channel region. The impurity added to the region 5262a can be added to the region 5262b. The concentration of the impurity added to the region 5262c, the region 5262d, or the region 5262e is lower than that of the impurity added to the region 5262c, the region 5262d, or the region 5262e. The regions 5262b and 5262d are preferably doped with impurities at low concentrations. This region is called the LDD (Lightly Doped Drain) region. However, the area 5262b and the area 5262d can be omitted. The regions 5262c and 5262e are regions in which impurities are added to the semiconductor layer 5262 at a high concentration. The region functions as a source region or a drain region.

[0211] The semiconductor layer 5303b is a semiconductor layer to which phosphorus or the like is added as an impurity element. , has n-type conductivity.

[0212] When an oxide semiconductor or a compound semiconductor is used as the semiconductor layer 5303a, In this case, the semiconductor layer 5303b can be omitted.

[0213] An example of the insulating layer 5263, the insulating layer 5302, and the insulating layer 5356 is silicon oxide (S iO x ), silicon nitride (SiNx ), silicon oxynitride (SiO x N y )(x>y), oxynitride Silicon (SiN x O y ) (x>y) or a laminate thereof Structure etc.

[0214] Conductive layer 5264, conductive layer 5266, conductive layer 5268, conductive layer 5271, conductive layer 5301 , a conductive layer 5304, a conductive layer 5306, a conductive layer 5308, a conductive layer 5357, and a conductive layer 53 An example of the conductive film 59 is a conductive film having a single layer structure or a laminated structure thereof. Examples of these include aluminum (Al), tantalum (Ta), titanium (Ti), and molybdenum (Mo). Mo, Tungsten (W), Neodymium (Nd), Chromium (Cr), Nickel (Ni ), platinum (Pt), gold (Au), silver (Ag), copper (Cu), manganese (Mn), cobalt (Co), Niobium (Nb), Silicon (Si), Iron (Fe), Palladium (Pd), Carbon (C), scandium (Sc), zinc (Zn), phosphorus (P), boron (B), arsenic (As ), gallium (Ga), indium (In), tin (Sn), and oxygen (O). A film of a single element selected from the group consisting of the elements listed above, or a film of one or more elements selected from the group consisting of the elements listed above. An example of the compound is one or more selected from the above group. Alloys containing several elements (Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO) , indium tin oxide with silicon oxide (ITSO), zinc oxide (ZnO), tin oxide (Sn O), Cadmium Tin Oxide (CTO), Aluminum Neodymium (Al-Nd), Magnesium Silver ( Mg-Ag), Molybdenum Niobium (Mo-Nb), Molybdenum Tungsten (Mo-W) , molybdenum-tantalum (Mo-Ta) alloy materials, is a compound of multiple elements and nitrogen (titanium nitride, tantalum nitride, molybdenum nitride, etc.) film), or a compound of one or more elements selected from the above group with silicon (tungsten Sten silicide, titanium silicide, nickel silicide, aluminum silicon, molybdenum Other examples include carbon nanotubes, organic nanotubes, and silicon silicide films. The nanotube materials include nanotubes, inorganic nanotubes, or metallic nanotubes.

[0215] Silicon (Si) can be doped with n-type impurities (such as phosphorus) or p-type impurities (such as boron). It is possible to include:

[0216] When copper is used as a conductive layer, it is recommended to use a laminated structure to improve adhesion. is preferred.

[0217] The conductive layer in contact with the oxide semiconductor or silicon may be formed of molybdenum, titanium, or the like. It is preferable to use:

[0218] In addition, by using an alloy material of neodymium and aluminum as the conductive layer, Minium is less likely to cause hillocks.

[0219] When a semiconductor material such as silicon is used as the conductive layer, the semiconductor material such as silicon The material can be formed simultaneously with the semiconductor layer of the transistor.

[0220] In addition, ITO, IZO, ITSO, ZnO, Si, SnO, CTO, or carbon nano Since the tube has a light-transmitting property, these materials can be used as pixel electrodes, counter electrodes, or common electrodes. It can be used for light transmitting parts such as electrodes.

[0221] In addition, by using a low resistance material (such as aluminum) to form a laminated structure, The resistance of the wiring can be reduced.

[0222] In addition, if a material with low heat resistance (such as aluminum) is used, By sandwiching the low heat resistant material (such as tantalum, titanium, neodymium, etc.) in a laminated structure, This makes it possible to take advantage of the advantages of the material while also improving the heat resistance of wiring, electrodes, etc.

[0223] In addition, materials that react with other materials and change their properties are called "materials that are less likely to react with those other materials." It can be sandwiched or covered by materials, for example ITO and aluminum. When connecting the ITO and aluminum, neodymium alloy, titanium, molybdenum, etc. For example, when connecting silicon and aluminum, It is possible to sandwich neodymium alloy, titanium, or molybdenum between silicon and aluminum. These materials can be used for wiring, electrodes, conductive layers, conductive films, terminals, vias, plugs, etc. It can also be used for the following:

[0224] The insulating layer 5265, the insulating layer 5267, the insulating layer 5269, the insulating layer 5305, and the insulating layer 53 An example of the insulating film 58 is a single-layer insulating film or a laminated structure thereof. One example is silicon oxide (SiO x ), silicon nitride (SiN x ), or silicon oxynitride (SiO x N y )(x>y), silicon oxynitride (SiN x O y )(x>y) etc. The film contains nitrogen, the film contains carbon such as DLC (Diamond-Like Carbon), or xanthane resin, epoxy, polyimide, polyamide, polyvinylphenol, benzocyclo butene, or organic materials such as acrylic.

[0225] An example of the light-emitting layer 5270 is an organic EL element or an inorganic EL element. An example of the L element is a hole injection layer made of a hole injection material, a hole transport layer made of a hole transport material, and a light-emitting layer made of a light-emitting material; an electron transport layer made of an electron transport material; or a single layer structure of a layer made of a mixture of two or more of these materials. Or a laminated structure of these.

[0226] Examples of the liquid crystal layer 5307 include nematic liquid crystal, cholesteric liquid crystal, and smectic liquid crystal. Liquid crystal, discotic liquid crystal, thermotropic liquid crystal, lyotropic liquid crystal, low molecular weight liquid crystal, Polymer liquid crystal, polymer dispersed liquid crystal (PDLC), ferroelectric liquid crystal, antiferroelectric liquid crystal, main chain liquid crystal, Examples include side-chain polymer liquid crystal, plasma-addressed liquid crystal (PALC), and banana-shaped liquid crystal. The liquid crystal display is driven by a Twisted Nematic (TN) mode. mode, STN (Super Twisted Nematic) mode, IPS (In- Plane-Switching mode, FFS (Fringe Field Switching) mode tching) mode, MVA (Multi-domain Vertical Ali gnment) mode, PVA(Patterned Vertical Alignm) ent) mode, ASV (Advanced Super View) mode, ASM ( Axially Symmetrically aligned Micro-cell) mode , OCB (Optically Compensated Birefringence) ) mode, ECB (Electrically Controlled Birefring ngence) mode, FLC (Ferroelectric Liquid Crys tal) mode, AFLC(AntiFerroelectric Liquid Cr ystal) mode, PDLC (Polymer Dispersed Liquid Crystal mode, guest host mode, Blue Phase mode Examples include .

[0227] Note that an insulating layer functioning as an alignment film is provided over the insulating layer 5305 and the conductive layer 5306. It is possible to form an insulating layer or the like that functions as a protrusion.

[0228] Note that a color filter, a black matrix, or a protrusion is provided on the conductive layer 5308. An insulating layer or the like that functions as a conductive layer can be formed under the conductive layer 5308. It is possible to form an insulating layer that functions as a barrier layer.

[0229] In the cross-sectional structure of FIG. 31A, the insulating layer 5269, the light-emitting layer 5270, and the conductive layer The layer 5271 is omitted, and the liquid crystal layer 5307 and the conductive layer 5308 shown in FIG. 31(B) are formed as the insulating layer 52 67 and on top of conductive layer 5268.

[0230] In the cross-sectional structure of FIG. 31(B), the liquid crystal layer 5307 and the conductive layer 5308 are omitted. The insulating layer 5269, the light-emitting layer 5270, and the conductive layer 5271 shown in FIG. 5305 and the conductive layer 5306.

[0231] In the cross-sectional structure of FIG. 31C, By forming an insulating layer 5269, a light-emitting layer 5270, and a conductive layer 5271 shown in FIG. Alternatively, the liquid crystal layer 5307 and the conductive layer 5308 shown in FIG. It may be formed over layer 5267 and conductive layer 5268 .

[0232] This embodiment may be modified, added, revised, or deleted in part or in whole from other embodiments. , application, superordinate conception, or subordinate conception. Any part or all of the above may be freely combined with any part or all of the other embodiments. It can be applied or substituted.

[0233] (Embodiment 7) In this embodiment, a display module to which the semiconductor device of one embodiment of the present invention is applied will be described. The explanation will be given with reference to FIG.

[0234] The display module 8000 shown in FIG. 32 includes an upper cover 8001 and a lower cover 8002. Between them, touch panel 8004 connected to FPC8003, A display panel 8006, a backlight unit 8007, a frame 8009, a printed circuit board The backlight unit 8007, the battery 8011, and the LCD panel 8012 are also included. The telly 8011, the touch panel 8004, etc. may not be provided.

[0235] The semiconductor device of one embodiment of the present invention can be used for the display panel 8006, for example.

[0236] The upper cover 8001 and the lower cover 8002 are connected to the touch panel 8004 and the display panel The shape and dimensions can be changed as appropriate to match the size of 8006.

[0237] The touch panel 8004 is a resistive or capacitive touch panel. The display panel 8006 can be used by overlapping it with the opposing substrate (sealing substrate). It is also possible to provide a touch panel function to the display panel. It is also possible to provide an optical sensor in each pixel of the 8006 to make it into an optical touch panel. Alternatively, a touch sensor electrode is provided in each pixel of the display panel 8006, and a capacitive touch sensor is provided. It may also be a panel.

[0238] The backlight unit 8007 includes a light source 8008. Alternatively, the light diffusing plate may be provided at the end of the light receiving unit 8007.

[0239] The frame 8009 protects the display panel 8006 and also supports the movement of the printed circuit board 8010. It also functions as an electromagnetic shield to block electromagnetic waves generated by the operation of the frame. The frame 8009 may also function as a heat sink.

[0240] The printed circuit board 8010 includes a power supply circuit, a signal circuit for outputting a video signal, and a clock signal. The power supply circuit is provided with a signal processing circuit. Alternatively, the power source may be a battery 8011 provided separately. 1 can be omitted if commercial power is used.

[0241] The display module 8000 also includes components such as a polarizing plate, a retardation plate, and a prism sheet. Additional ones may be provided.

[0242] The camera unit may be provided on the same surface as the display surface.

[0243] The structure described in this embodiment may be used in appropriate combination with structures described in other embodiments. can be done.

[0244] (Embodiment 8) In this embodiment, an example of an electronic device will be described. The camera section may be provided on the same surface as the display surface.

[0245] 33(A) to 33(H) and 34(A) to 34(D) are diagrams showing electronic devices. These electronic devices include a housing 5000, a display unit 5001, a speaker 5003, and a LE. D lamp 5004, operation key 5005 (including power switch or operation switch), connection Terminal 5006, sensor 5007 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance , light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation (including functions to measure flow rate, humidity, gradient, vibration, odor, or infrared rays), 5008, etc.

[0246] FIG. 33(A) shows a mobile computer, which in addition to the above includes a switch 5009 , an infrared port 5010, etc. FIG. 33(B) shows a mobile phone equipped with a recording medium. A portable image reproducing device (e.g., a DVD reproducing device) and, in addition to the above, the following devices are also included: The display unit 5002, the recording medium reading unit 5011, etc. In addition to the above, the display includes a second display unit 5002 and a support unit 5012. , earphones 5013, etc. FIG. 33(D) shows a portable game machine. In addition to the above, the recording medium reading unit 5011 and the like can be included. It is a projector, and in addition to the above, has a light source 5033, a projection lens 5034, etc. FIG. 33(F) shows a portable gaming machine, which, in addition to the above, has a second display. 33G shows a television. It is a receiver, and in addition to the above, may have a tuner, an image processor, and the like. FIG. 33(H) shows a portable television receiver, which, in addition to the above, is capable of transmitting and receiving signals. 34(A) is a display, and In addition to the above, a support stand 5018, etc. can be provided. In addition to the above, there is an external connection port 5019, a shutter button 5015, an image receiving FIG. 34(C) shows a computer, which may include the above-mentioned In addition to the above, there is a pointing device 5020, an external connection port 5019, and a reader / writer. 5021, etc. FIG. 34(D) shows a mobile phone, In addition, antenna 5014, one-segment partial reception service channel for mobile phones and mobile terminals It may have a tuner, etc.

[0247] The electronic devices shown in FIGS. 33(A) to 33(H) and 34(A) to 34(D) are For example, various information (still images, videos, text images, etc.) can be stored. ) on the display, touch panel function, calendar, date or time display, etc. Functions for controlling processing by various software (programs), wireless communication functions , a function for connecting to various computer networks using wireless communication functions, wireless communication functions A function for transmitting or receiving various data using the Or, the data can be read and displayed on a display unit. In electronic devices having such a display unit, one display unit is used mainly to display image information, and another A function that mainly displays text information on one display unit, or a function that takes parallax into consideration on multiple displays By displaying the image, it is possible to provide a function of displaying a stereoscopic image. In electronic devices having an image receiving unit, the functions of taking still images, taking videos, The function of automatically or manually correcting the captured image, and the function of storing the captured image on a recording medium (external or camera) It can have functions such as storing the captured image on the camera (built into the camera), displaying the captured image on the display, etc. In addition, the electronic devices shown in Figs. 33(A) to 33(H) and Figs. 34(A) to 34(D) The functions that the device can have are not limited to these, and the device can have a variety of functions.

[0248] The electronic device described in this embodiment has a display unit for displaying some information. It is characterized by the above.

[0249] Next, application examples of the semiconductor device will be described.

[0250] FIG. 34(E) shows an example in which a semiconductor device is integrated with a building. E) is a housing 5022, a display unit 5023, a remote control device 5024 which is an operation unit, a speaker The semiconductor device is a wall-mounted type that is integrated with the building and is installed in a space It can be installed without requiring a large space.

[0251] FIG. 34(F) shows another example in which a semiconductor device is provided inside a building as an integral part of the building. The display panel 5026 is attached to the unit bath 5027. The viewer can then view the display panel 5026.

[0252] In this embodiment, a wall and a unit bath are used as examples of structures. The configuration is not limited to this, and the semiconductor device can be installed in various structures.

[0253] Next, an example in which the semiconductor device is integrated with a moving object will be described.

[0254] FIG. 34G is a diagram showing an example in which the semiconductor device is provided in an automobile. The cable 5028 is attached to a vehicle body 5029 and is connected to the vehicle body via the vehicle body movement or the inside or outside of the vehicle. The information input from the smartphone can be displayed on demand. It may have.

[0255] FIG. 34(H) shows an example in which a semiconductor device is integrated with a passenger airplane. FIG. 34(H) shows a display panel 5031 mounted on a ceiling 5030 above the seats of a passenger airplane. The display panel 5031 is attached to the ceiling 5 030 and the hinge portion 5032 are attached together. This allows passengers to view the display panel 5031. The display panel 5031 is operated by passengers. This allows the device to display information.

[0256] In this embodiment, an automobile body and an airplane body are exemplified as moving bodies. However, this is not limited to motorcycles, four-wheeled vehicles (including cars, buses, etc.), trains (mono It can be installed on a variety of things, including rails, railways, ships, etc. [Explanation of symbols]

[0257] 102 Wiring 104 Wiring 104A Wiring 104B Wiring 106 Load 106A Light emitting element 108 Transistor 110 Capacitive element 112 Switch 112A Transistor 114 Switch 114A Transistor 116 Switch 116A Transistor 118 Switch 118A Transistor 118B Transistor 120 Switch 120A Transistor 122 Wiring 124 Wiring 125 Wiring 126 Wiring 126A Wiring 127 Wiring 312 Switch 312A Transistor 325 Wiring 326 Wiring 326A Wiring 501 Pixel section 502 Video line driver circuit 503A Gate line driver circuit 503B Gate line driver circuit 601 Electronic equipment 602 Display device 603 Camera Department 604 Camera Division 701 Wiring 702 Wiring 703 Circuit 703A circuit 703B circuit 705 Circuit 5000 cabinet 5001 Display section 5002 Display section 5003 Speaker 5004 LED Lamp 5005 Operation key 5006 Connection terminal 5007 Sensor 5008 Microphone 5009 Switch 5010 Infrared port 5011 Recording medium reading unit 5012 Support part 5013 Earphones 5014 Antenna 5015 Shutter button 5016 Image receiving unit 5017 charger 5018 Support stand 5019 External connection port 5020 Pointing Device 5021 Reader / Writer 5022 Case 5023 Display section 5024 Remote control device 5025 Speaker 5026 Display Panel 5027 Unit Bath 5028 Display Panel 5029 Body 5030 Ceiling 5031 Display Panel 5032 Hinge part 5033 Light source 5034 Projection Lens 5260 PCB 5261 Insulation layer 5262 Semiconductor layer 5262a area 5262b area 5262c area 5262d area 5262e area 5263 Insulation layer 5264 Conductive layer 5265 Insulation layer 5266 Conductive layer 5267 Insulating layer 5268 Conductive layer 5269 Insulation layer 5270 Light-emitting layer 5271 Conductive layer 5300 Board 5301 Conductive layer 5302 Insulating layer 5303a Semiconductor layer 5303b Semiconductor layer 5304 Conductive layer 5305 Insulation layer 5306 Conductive layer 5307 Liquid crystal layer 5308 Conductive layer 5350 area 5351 area 5352 Semiconductor substrate 5353 area 5354 Insulation layer 5355 area 5356 Insulation layer 5357 Conductive layer 5358 Insulation layer 5359 Conductive layer 8000 Display Module 8001 Top cover 8002 Lower cover 8003 FPC 8004 Touch Panel 8005 FPC 8006 Display Panel 8007 Backlight unit 8008 light source 8009 Frame 8010 Printed Circuit Board 8011 Battery

Claims

[Claim 1] A light emitting device having a pixel, The pixel includes a transistor and a light-emitting element, the transistor has a function of controlling a magnitude of a current flowing through the light-emitting element, the transistor has a function of being operated in a saturation region during a period when the light emitting device is displaying characters or images; 13. A light emitting device, wherein the transistor has a function of being operated in a linear region during a period in which the light emitting device irradiates an object with illumination light.

Citation Information

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