Exposure apparatus, control method, and article manufacturing method

Abstract

To provide a technique advantageous for efficiently correcting gap information showing a gap between an optical axis of an off-axis detection system and an optical axis of a projection optical system.SOLUTION: An exposure apparatus that exposes a substrate via a projection optical system comprises: a stage which holds and moves the substrate; an imaging part which images a mark on the substrate without passing through the projection optical system; and a control part which controls positioning of the substrate on the basis of a position of the mark obtained by using the imaging part and gap information showing a gap between an optical axis of the imaging part and an optical axis of the projection optical system. The control part measures a position of the stage in a predetermined state, in which a reference mark on the stage is arranged within the field of view of the imaging part, as a first position at first timing when the gap information has been created, and measures a position of the stage in the predetermined state at second timing after the first timing as a second position, and corrects the gap information by a difference between the first position and the second position.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to an exposure apparatus, a control method thereof, and a method for manufacturing an article. [Background technology]

[0002] In the manufacturing process of semiconductor devices and other devices where fine patterns are formed, exposure equipment is widely used to reduce and project / transfer the pattern formed on an original (e.g., a reticle) onto a substrate (e.g., a wafer) coated with a photosensitive material. In these exposure equipment, the demand for improving the pattern resolution is becoming stricter day by day, as is the demand for improving the degree of matching between the pattern on the original and the pattern on the substrate (hereinafter referred to as overlay accuracy). Furthermore, satisfying these demands while increasing the productivity of the equipment (hereinafter referred to as throughput) has a decisive impact on the appeal of the exposure equipment.

[0003] In an exposure apparatus, in order to align the original and the substrate with high accuracy and high speed, an off-axis detection system that detects the positions of a plurality of alignment marks provided on the substrate without using a projection optical system may be provided. When aligning the original and the substrate using the off-axis detection system, it is necessary to obtain in advance distance information indicating the distance (so-called baseline) between the optical axis of the off-axis detection system and the optical axis of the projection optical system. If such distance information is obtained in advance, it is possible to align the original and the substrate with high accuracy based on the positions of the alignment marks and the baseline obtained using the off-axis detection system.

[0004] However, the baseline may fluctuate over time due to, for example, deformation of components caused by heat generated during operation of the exposure apparatus, etc. Since baseline fluctuations cause a decrease in overlay accuracy, it is desirable to periodically remeasure and correct the baseline (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 63-224326 Summary of the Invention [Problem to be solved by the invention]

[0006] In recent years, in exposure apparatuses, in addition to improvements in overlay accuracy, throughput has been further improved, and it is desirable to reduce the time required for baseline correction.

[0007] Therefore, an object of the present invention is to provide an advantageous technique for efficiently correcting distance information indicating the distance (baseline) between the optical axis of an off-axis detection system and the optical axis of a projection optical system. [Means for solving the problem]

[0008] In order to achieve the above-mentioned object, an exposure apparatus as one aspect of the present invention is an exposure apparatus that exposes a substrate via a projection optical system, and includes a stage that holds and moves the substrate, an imaging unit that images a mark on the substrate without using the projection optical system, a measurement unit that measures a position of the stage, and a control unit that controls alignment of the substrate based on the position of the mark obtained using the imaging unit and the measurement unit and spacing information that indicates the spacing between the optical axis of the imaging unit and the optical axis of the projection optical system, wherein at a first timing when the spacing information is generated, the control unit measures a position of the stage in a predetermined state in which a reference mark on the stage is located within the field of view of the imaging unit as a first position using the measurement unit, and at a second timing after the first timing, measures the position of the stage in the predetermined state as a second position using the measurement unit, and corrects the spacing information based on the difference between the first position and the second position.

[0009] Further objects and other aspects of the present invention will become apparent from the following description of preferred embodiments with reference to the accompanying drawings. Effect of the Invention

[0010] According to the present invention, for example, it is possible to provide an advantageous technique for efficiently correcting distance information indicating the distance (baseline) between the optical axis of an off-axis detection system and the optical axis of a projection optical system. [Brief description of the drawings]

[0011] [Figure 1] FIG. 1 is a schematic diagram showing an example of the configuration of an exposure apparatus according to an embodiment of the present invention. [Diagram 2] Schematic diagram of the substrate stage viewed from above (+Z direction) [Diagram 3] Schematic diagram of the substrate stage, projection optical system, and off-axis detection system viewed from above (+Z direction) [Figure 4] A flowchart showing the operation of an exposure apparatus according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0013] First Embodiment An exposure apparatus EXP according to a first embodiment of the present invention will be described. FIG. 1 is a schematic diagram showing an example of the configuration of the exposure apparatus EXP according to the first embodiment. The exposure apparatus EXP may include an original stage 2 that holds an original 1 (e.g., a reticle), a substrate stage 4 that holds a substrate 3 (e.g., a wafer), and an illumination optical system 5 that illuminates the original 1 held by the original stage 2 with exposure light. The exposure apparatus EXP may also include a projection optical system 6 that forms an image of the pattern on the substrate by projecting the pattern of the original 1 illuminated with the exposure light onto the substrate, and a controller 17 that controls the operation of the entire exposure apparatus EXP. The exposure apparatus EXP may also include a substrate driving mechanism 18 that drives the substrate 3 by driving the substrate stage 4, and an original driving mechanism (not shown) that drives the original stage 2 to drive the original 1.

[0014] The exposure apparatus EXP may be configured as a scanning exposure apparatus (scanning stepper) that transfers the pattern of the original 1 to the substrate 3 by driving the original 1 and the substrate 3 in synchronization with each other in the scanning direction. Alternatively, the exposure apparatus EXP may be configured as an exposure apparatus (stepper) that transfers the pattern of the original 1 to the substrate 3 while the original 1 and the substrate 3 are stopped. Here, in this embodiment, directions are indicated using an XYZ coordinate system in which the direction that coincides with the optical axis of the projection optical system 6 is the Z-axis direction, and the directions that are orthogonal to each other in a plane perpendicular to the Z-axis direction are the X-axis direction and the Y-axis direction. In the following, any direction parallel to the X-axis that defines the XYZ coordinate system is the X-axis direction, any direction parallel to the Y-axis that defines the XYZ coordinate system is the Y-axis direction, and any direction parallel to the Z-axis that defines the XYZ coordinate system is the Z-axis direction. In addition, the rotation directions around the X-axis, Y-axis, and Z-axis are respectively the θX, θY, and θZ directions. When the exposure apparatus EXP is configured as a scanning exposure apparatus, the scanning direction of the original 1 and the substrate 3 is the Y-axis direction.

[0015] A predetermined illumination area of ​​the original 1 is illuminated by the illumination optical system 5 with exposure light having a uniform illuminance distribution. The illumination optical system 5 may illuminate the original 1 with exposure light emitted from a light source such as a mercury lamp, a KrF excimer laser, or an ArF excimer laser. When i-line is used as the exposure light, a mercury lamp may be used as the light source. When ultraviolet light with a shorter wavelength is used as the exposure light, a KrF excimer laser or an ArF excimer laser may be used as the light source. In recent years, extreme ultraviolet light (EUV light) with a wavelength of several nm to hundreds of nm may be used as the exposure light in order to manufacture semiconductor elements and the like having finer patterns.

[0016] The original stage 2 can be configured to be capable of two-dimensional movement along a plane perpendicular to the optical axis of the projection optical system 6 (i.e., the XY plane) and small rotation in the θZ direction while holding the original 1. The original driving mechanism that drives the original stage 2 includes an actuator such as a linear motor, and is controlled by the control unit 17. A mirror 7 is provided on the original stage 2, and a laser interferometer 9 that measures the position of the original stage 2 is provided at a position facing the mirror 7. The position of the original stage 2 in the X-axis direction, the position of the original stage 2 in the Y-axis direction, and the rotation angle in the θZ direction are measured in real time by the laser interferometer 9, and the measurement results are provided to the control unit 17. The control unit 17 can position the original 1 held by the original stage 2 by controlling the original driving mechanism based on the measurement results of the laser interferometer 9.

[0017] The projection optical system 6 is composed of multiple optical elements, and projects the pattern of the original 1 onto the substrate 3 at a predetermined projection magnification β. In this embodiment, the projection optical system 6 can be configured as a reduced projection system with a projection magnification β of less than 1. The projection magnification β can be, for example, 1 / 4 or 1 / 5.

[0018] The substrate stage 4 is configured to be movable while holding the substrate 3. Specifically, the substrate stage 4 may include a Z stage on which a substrate chuck for holding the substrate 3 is mounted, and an XY stage for supporting the Z stage. The substrate driving mechanism 18 for driving the substrate stage 4 includes an actuator such as a linear motor, and is controlled by the control unit 17. A mirror 8 is provided on the substrate stage 4, and laser interferometers 10 and 12 for measuring the position and attitude of the substrate stage 4 are provided at positions facing the mirror 8. The position of the substrate stage 4 in the X-axis direction, the position of the substrate stage 4 in the Y-axis direction, and the rotation angle in the θZ direction are measured in real time by the laser interferometer 10, and the measurement results are provided to the control unit 17. The position of the substrate stage 4 in the Z-axis direction, and the rotation angles in the θX and θY directions are measured in real time by the laser interferometer 12, and the measurement results are provided to the control unit 17. The control unit 17 can position the substrate 3 held by the substrate stage 4 by controlling the substrate driving mechanism 18 based on the measurement results of the laser interferometers 10 and 12.

[0019] Here, the laser interferometer 10 is configured as a measurement unit that measures the position of a reference point of the substrate stage 4. Specifically, the laser interferometer 10 irradiates light onto the reflecting surface of the mirror 8 of the substrate stage 4, detects the distance to the reflecting surface of the mirror 8 of the substrate stage 4 based on the reflected light from the reflecting surface, and measures the position of the reflecting surface as the position of the reference point of the substrate stage 4. That is, in this embodiment, the reference point whose position is measured by the laser interferometer 10 is a place on the substrate stage 4 where a reflecting surface that reflects the light from the laser interferometer 10 is provided. In addition, in this embodiment, the laser interferometers 10 and 12 are exemplified as a measurement unit that measures the position of the substrate stage 4 (the position of the reference point), but this is not limited thereto, and an encoder may be used. In this case, an encoder scale (grating) may be provided on the substrate stage 4 instead of the mirror 8. The reference point whose position is measured by the encoder is the place on the substrate stage 4 where the encoder scale is provided.

[0020] At least two corners of the substrate stage 4 are provided with reference plates 11 at approximately the same height as the surface of the substrate 3. FIG. 2 is a schematic diagram of the substrate stage 4 as viewed from above (+Z direction). In the example of FIG. 2, a plurality of (three) reference plates 11a to 11c are provided on the substrate stage 4. Each of the reference plates 11a to 11c may include a reference mark 111 detected by the original position detection systems 13 and 14 and a reference mark 112 detected by the position detection system 16. The relative positions of the reference marks 111 and 112 are known. Furthermore, the reference marks 111 and 112 may have the same shape, and may be configured as a reference mark (i.e., one reference mark) commonly used by the original position detection systems 13 and 14 and the position detection system 16. Furthermore, one reference plate 11 may be configured to include a plurality of reference marks 111 and a plurality of reference marks 112.

[0021] The original position detection system 13 is disposed near the original stage 2 and detects the reference mark 111 on the substrate stage via the projection optical system 6. In this embodiment, the original position detection system 13 is configured as an imaging section (second imaging section) including a photoelectric conversion element such as a CCD or CMOS and an imaging optical system, and images the reference mark 111 on the substrate stage via the projection optical system 6. Specifically, the original position detection system 13 detects (images) the reference mark (not shown) on the original stage 2 illuminated with a light source of exposure light and the reference mark 111 on the substrate stage 4 by using a photoelectric conversion element, and provides the image obtained thereby to the control unit 17. The control unit 17 detects the relative positions of the reference mark on the original stage 2 and the reference mark 111 on the substrate stage 4 based on the image obtained by the original position detection system 13. At this time, the control unit 17 can also adjust the relative positional relationship (X-, Y-, and Z-axis directions) between the original stage 2 (original 1) and the substrate stage 4 (substrate 3) by adjusting the position and focus of the reference mark on the original stage 2 and the reference mark 111 on the substrate stage 4. Note that the original position detection system 13 is sometimes called a TTL (Through The Lens) detection system, and may be referred to below as the "TTL detection system 13."

[0022] In this embodiment, the reference mark on the original stage 2 and the reference mark 111 on the substrate stage 4 detected by the TTL detection system 13 are configured as reflective marks, but may be configured as transmissive marks. In this case, an original position detection system 14 may be used instead of the TTL detection system 13. The original position detection system 14 is disposed in the substrate stage 4 below the reference mark 111, and may be configured as an imaging section (second imaging section) for detecting (imaging) the transmissive reference mark 111. While driving the substrate stage 4 in the X-axis direction, the Y-axis direction, and the Z-axis direction, the original position detection system 14 may be used to detect images (transmitted light) that have passed through both the reference mark on the original stage 2 and the reference mark 111 on the substrate stage 4. This allows the control unit 17 to detect the relative positions of the reference mark on the original stage 2 and the reference mark 111 on the substrate stage 4 based on the detection result of the original position detection system 14. At this time, the control unit 17 can also adjust the relative positional relationship (X-, Y-, and Z-axis directions) between the original stage 2 (original 1) and the substrate stage 4 (substrate 3) by aligning the position and focus between the reference mark on the original stage 2 and the reference mark 111 on the substrate stage 4.

[0023] The position detection system 16 is disposed to the side of the projection optical system 6, and detects a mark on the substrate stage (for example, the alignment mark 19 on the substrate 3, or the reference mark 112 on the reference plate 11) without the projection optical system 6. In the present embodiment, the position detection system 16 is configured as an imaging section (first imaging section) including a photoelectric conversion element such as a CCD or a CMOS and an imaging optical system, and captures an image of the reference mark 112 on the substrate stage without the projection optical system 6. Specifically, the position detection system 16 may include a projection system that projects detection light onto a mark on the substrate stage 4, and a light receiving system that receives reflected light from the mark. The position detection system 16 is connected to the control section 17, and the detection result of the position detection system 16 is provided to the control section 17. The control section 17 may position the substrate 3 held on the substrate stage 4 in the X-axis direction, the Y-axis direction, and the θZ direction by driving the substrate stage 4 in the X-axis direction, the Y-axis direction, and the θZ direction based on the detection result of the position detection system 16. The position detection system 16 may be called an off-axis detection system, and may be hereinafter referred to as "off-axis detection system 16."

[0024] The focus detection system 15 includes a light projecting system that projects detection light at an oblique incidence onto the surface of the substrate 3, and a light receiving system that receives reflected light from the substrate 3, and the detection result of the focus detection system 15 can be provided to the control unit 17. Based on the detection result of the focus detection system 15, the control unit 17 drives the substrate stage 4 (Z stage) using a substrate driving mechanism 18, thereby adjusting the position (focus position) and tilt angle in the Z-axis direction of the substrate 3 held by the substrate stage 4.

[0025] The control unit 17 is configured by a computer (information processing device) having a processor such as a CPU (Central Processing Unit) and a storage unit such as a memory, and controls each unit of the exposure apparatus EXP to control the exposure process of the substrate 3. The exposure process is a process of transferring a pattern of the original 1 onto the substrate, and may be understood as including alignment between the original 1 and the substrate 3. The exposure process may be performed sequentially for each of a plurality of shot areas 3a arranged (set) on the substrate 3 as shown in FIG. 2. The control unit 17 may also be configured by a PLD (abbreviation for Programmable Logic Device) such as an FPGA (abbreviation for Field Programmable Gate Array), an ASIC (abbreviation for Application Specific Integrated Circuit), a general-purpose or dedicated computer with a built-in program, or a combination of all or part of these.

[0026] Here, the position information of the substrate 3 (shot area 3a) obtained by detecting the alignment mark 19 of the substrate 3 using the off-axis detection system 16 is information based on the optical axis of the off-axis detection system 16. Therefore, it is necessary to convert it into information based on the optical axis of the projection optical system 6. For such conversion, interval information indicating the interval (so-called baseline) between the optical axis of the off-axis detection system 16 and the optical axis of the projection optical system 6 is used. Hereinafter, this interval may be referred to as the "baseline", and the interval information may be referred to as "baseline information".

[0027] The baseline information can be generated based on the difference between the position of the reference mark on the substrate stage 4 measured using the off-axis detection system 16 (first imaging unit) and the position of the reference mark on the substrate stage 4 measured using the TTL detection system 13 (second imaging unit). Specifically, the control unit 17 causes the laser interferometer 10 (measurement unit) to measure the position of the substrate stage 4 in a state in which the reference mark 112 on the substrate stage 4 is disposed at a predetermined position (e.g., the center of the field of view) in the field of view of the off-axis detection system 16. The control unit 17 also causes the laser interferometer 10 (measurement unit) to measure the position of the substrate stage 4 in a state in which the reference mark 111 on the substrate stage 4 is disposed at a predetermined position (e.g., the center of the field of view) in the field of view of the TTL detection system 13. This allows the control unit 17 to generate baseline information using the difference between the measurement result obtained using the off-axis detection system 16 and the measurement result obtained using the TTL detection system 13 as the baseline.

[0028] When measuring the position of the substrate stage 4 by the laser interferometer 10, the influence of the fluctuation of the air refractive index in the optical path can be reduced by shortening the optical path between the laser interferometer 10 and the mirror 8 as much as possible. That is, the position of the substrate stage 4 can be measured with high accuracy. Therefore, in generating the baseline information, it is preferable to use the reference plate 11c, which is the farthest from the reflecting surface of the mirror 8 as the reference point whose position is measured by the laser interferometer 10, among the multiple reference plates 11a to 11c (reference marks) on the substrate stage 4. This is because, when the reference plate 11c is used, the optical path of the laser interferometer 10 in a state in which the reference mark is arranged within the field of view of the off-axis detection system 16 and the TTL detection system 13 can be shortened compared to the case of using the other reference plates 11a to 11b. In this embodiment, the off-axis detection system 16 and the TTL detection system 13 detect different reference marks 111 and 112 from each other, but this is not limited thereto, and the same reference mark may be detected.

[0029] Furthermore, the exposure apparatus EXP of the present embodiment is provided with a temperature detection unit 113 that detects the temperature of the substrate stage 4. The temperature detection unit 113 can be disposed, for example, in the vicinity of the reference plate 11a that is closest to the reflective surface of the mirror 8 among the multiple reference plates 11a to 11c.

[0030] The operation of the exposure apparatus EXP will be described below. In order to ensure portability and traceability within a semiconductor factory, a certain number of substrates 3 are generally fed into the exposure apparatus EXP to form one processing unit. Such a processing unit is made up of multiple substrates 3 to be subjected to similar exposure processing, and can be called a "lot." Normally, due to restrictions on the number of substrates 3 that can be accommodated in a substrate transport container, one lot is often made up of 25 substrates 3, and all substrates 3 belonging to this lot are subjected to exposure processing using the same original 1.

[0031] When a lot is loaded into the exposure apparatus EXP, the original 1 may or may not be replaced. In either case, the alignment between the original 1 and the substrate 3 must be completed before the exposure process for the first substrate 3 is started. That is, the process of measuring the focus position of the substrate 3 using the focus detection system 15 and measuring the position of the alignment mark 19 of the substrate 3 using the off-axis detection system 16 is performed before the alignment. In addition, in the initial alignment, first, the reference mark 111 on the substrate stage 4 is placed within the field of view of the TTL detection system 13 (for example, captured at the center of the field of view). The positions of the substrate stage 4 in the X-axis and Y-axis directions at that time are measured in real time by the laser interferometer 10, and the measurement results are provided (transmitted) to the control unit 17. Next, the reference mark 112 on the substrate stage 4 is placed within the field of view of the off-axis detection system 16 (for example, captured at the center of the field of view). The positions of the substrate stage 4 in the X-axis and Y-axis directions at that time are measured in real time by the laser interferometer 10, and the measurement results are provided (transmitted) to the control unit 17. The control unit 17 calculates the difference between these two measurement results (i.e., the position (coordinates) of the substrate stage 4) and generates baseline information using this difference as a baseline. Note that hereinafter, the generation of baseline information using both the off-axis detection system 16 and the TTL detection system 13 may be simply referred to as "generation of baseline information."

[0032] Once the initial alignment, including the generation of baseline information, is completed for the first substrate 3 in the lot, exposure processing is performed on the first substrate 3, and exposure processing is sequentially performed on the remaining substrates 3 in the lot. During this process, part of the energy of the exposure light and stage drive is converted into heat, which changes the temperature of the internal space and components of the exposure apparatus EXP. The inside of the exposure apparatus EPX is composed of components that are minimally susceptible to dimensional fluctuations due to heat, and is designed with attention paid to temperature control using an air-cooling mechanism, etc., but in reality, even a slight change in temperature can cause baseline fluctuations. If the baseline information generated in the initial alignment continues to be used even after baseline fluctuations have occurred, the overlay accuracy may decrease.

[0033] However, detection of the reference mark on the substrate stage 4 by the TTL detection system 13 via the projection optical system 6 takes a longer time than detection of the reference mark on the substrate stage 4 by the off-axis detection system 16. Therefore, regenerating or correcting baseline information using the TTL detection system 13 reduces throughput (i.e., productivity of the apparatus), so it is desirable to avoid using the TTL detection system 13 on substrates other than the first substrate 3 in a lot.

[0034] Therefore, in this embodiment, the baseline information is corrected using only the off-axis detection system 16. Specifically, the control unit 17 measures the position of the substrate stage 4 in a predetermined state in which the reference mark 112 is disposed within the field of view of the off-axis detection system 16 as a first position using the laser interferometer 10 at the first timing when the baseline information is generated. The first timing may be, for example, the timing when the first alignment is performed for the first substrate 3 of a lot to generate the baseline information. The predetermined state may be a state in which the reference mark 112 is disposed at a predetermined position (for example, the center of the field of view) within the field of view of the off-axis detection system 16. Next, the control unit 17 measures the position of the substrate stage 4 in the predetermined state as a second position using the laser interferometer 10 at a second timing after the first timing. Then, the control unit 17 corrects the baseline information by the difference between the first position and the second position. In the following, the correction of the baseline information using only the off-axis detection system 16 may be simply referred to as "correction of the baseline information".

[0035] In correcting the baseline information, a reference mark 112 closer to the reference location (the reflecting surface of the mirror 8) of the substrate stage 4 than the reference mark 112 (second reference mark) of the reference plate 11c used in generating the baseline information is used. In this embodiment, of the multiple reference plates 11a to 11c on the substrate stage 4, the reference mark 112 of the reference plate 11a closest to the mirror 8 is used to correct the baseline information. The reference plate 11a may be understood as the reference plate closest to the off-axis detection system 16 in a state in which the substrate stage 4 is disposed at a substrate loading location among the multiple reference plates 11a to 11c. The substrate loading location may be defined as a location where the substrate stage 4 is disposed when the substrate 3 is loaded (supplied) onto the substrate stage 4 by a substrate transport mechanism (not shown). By selecting the reference plate 11a in this way, the reference plate 11a can be disposed below the off-axis detection system 16 while the substrate stage 4 is being moved from the substrate loading location to below the projection optical system 6, as shown in FIG. 3. That is, the reference mark of the reference plate 11a can be placed within the field of view of the off-axis detection system 16 without significantly changing the path of the substrate stage 4 from the substrate loading location to below the projection optical system 6, which can be advantageous in terms of throughput. Note that Fig. 3 shows a schematic diagram of the substrate stage 4, the projection optical system 6, and the off-axis detection system 16 as viewed from above (in the +Z direction).

[0036] Fig. 4 is a flowchart showing the operation of the exposure apparatus EXP of this embodiment. The flowchart in Fig. 4 illustrates the operation of the exposure apparatus EXP for one lot having a plurality of (e.g., 25) substrates 3. When there are a plurality of lots, the flowchart in Fig. 4 can be executed repeatedly. Furthermore, the flowchart in Fig. 4 can be executed by the control unit 17. The flowchart in Fig. 4 may be understood as a flowchart showing a control method of the exposure apparatus EXP.

[0037] Steps S101 to S104 are steps for carrying out exposure processing on the first (leading) substrate 3 in a lot.

[0038] In step S101, the control unit 17 loads the first (leading) substrate 3 in the lot onto the substrate stage 4 by a substrate transport mechanism (not shown). The substrate 3 can be loaded onto the substrate stage 4 while the substrate stage 4 is disposed at a substrate loading location. Next, in step S102, the control unit 17 generates baseline information. The baseline information is generated by detecting the reference mark 111 of the reference plate 11c using both the off-axis detection system 16 and the TTL detection system 13. As described above, the reference plate 11c can be the reference plate farthest from the reflecting surface of the mirror 8 as the reference point whose position is measured by the laser interferometer 10 among the multiple reference plates 11a to 11c on the substrate stage 4. The details of the generation of the baseline information are as described above, and therefore will not be described here.

[0039] In this embodiment, an example is shown in which baseline information is generated for each lot, but the present invention is not limited to this, and baseline information may be generated for a lot that satisfies a predetermined condition, such as the first lot after replacement of the original 1 or the first lot after maintenance of the exposure apparatus EXP.

[0040] In step S103, the control unit 17 uses the laser interferometer 10 to measure, as a first position, the position of the substrate stage 4 in a predetermined state in which the reference mark 112 of the reference plate 11a is disposed within the field of view of the off-axis detection system 16. As described above, the reference plate 11a may be the reference plate that is closest to the reflecting surface of the mirror 8, which serves as the reference location whose position is measured by the laser interferometer 10, among the multiple reference plates 11a to 11c on the substrate stage 4. Furthermore, this step S103 may be understood as a process that is performed at the first timing when the baseline information is generated. The position (first position) of the substrate stage 4 measured in this step S103 is stored in the storage unit.

[0041] In step S104, the control unit 17 performs an exposure process on each of the multiple shot areas 3a on the first substrate 3. As described above, the exposure process is a process of transferring the pattern of the original 1 onto the substrate. The exposure process may include a process of obtaining position information of the substrate 3 (shot area 3a) by detecting the alignment mark 19 on the substrate 3 using the off-axis detection system 16, and aligning the original 1 and the substrate 3 based on the position information of the substrate 3 and baseline information.

[0042] Steps S105 to S110 are steps for carrying out exposure processing on the second and subsequent substrates 3 in the lot.

[0043] In step S105, the control unit 17 causes a substrate transport mechanism (not shown) to remove (recover) the substrate 3 that has been subjected to the exposure process from the substrate stage 4, and also loads the nth substrate 3 to be subjected to the next exposure process onto the substrate stage 4. "n" represents the number of the second or subsequent substrate 3 in the lot, and an integer of 2 or greater is input. The substrate 3 can be removed from the substrate stage 4 and loaded onto the substrate stage 4 when the substrate stage 4 is positioned at the substrate load location.

[0044] In step S106, the control unit 17 determines whether or not to correct the baseline information. If it is determined that the baseline information is to be corrected, the process proceeds to step S107, and if it is determined that the baseline information is not to be corrected, the process proceeds to step S109.

[0045] The criterion for determining whether or not to correct the baseline information is given by, for example, collating the operating status of the exposure apparatus EXP and feedback from the overlay inspection machine and estimating the timing when the baseline fluctuation exceeds the allowable range. The number of the substrate 3 in the lot for which the baseline information is to be corrected during the exposure process, that is, the number of the substrate 3 for which the baseline information is to be corrected during the exposure process, may be input to the exposure apparatus EXP in advance. Alternatively, based on feedback from the overlay inspection machine or information from various sensors (for example, the temperature detection unit 113) of the exposure apparatus, it may be determined by an algorithm or learning mechanism mounted on the control unit 17 so as to achieve both throughput and overlay accuracy. As an example, based on the result of inspecting the overlay accuracy of a plurality of substrates 3 in a previous lot, the number of the substrate 3 for which the overlay accuracy has exceeded the allowable range may be determined as the number of the substrate 3 for which the baseline information is to be corrected during the exposure process. The number of the substrate for which the baseline information is to be corrected during the exposure process may be updated successively. Alternatively, it may be determined that the baseline information is to be corrected when the temperature of the substrate stage 4 measured by the temperature detection unit 113 exceeds a threshold value.

[0046] In step S107, the control unit 17 uses the laser interferometer 10 to measure, as a second position, the position of the substrate stage 4 in a predetermined state in which the reference mark 112 of the reference plate 11a is disposed within the field of view of the off-axis detection system 16. The reference plate 11a is the reference plate used in the above step S103. Step S107 may also be understood as a process performed at a second timing that is later than the first timing at which the baseline information was generated. The position (second position) of the substrate stage 4 measured in step S107 is stored in the storage unit.

[0047] Here, in this step S107, the projection optical system 6 and the TTL detection system 13 are not involved at all, and the position of the reference mark 112 on the reference plate 11a is quickly measured using only the off-axis detection system 16. Also, the reference plate 11a is used in the measurement in this step S107. This allows the reference plate 11a to be disposed below the off-axis detection system 16 without significantly changing the path of the substrate stage 4 from the substrate loading location to below the projection optical system 6, as described above with reference to FIG. 3, which can be advantageous in terms of throughput.

[0048] In step S108, the control unit 17 calculates the difference between the first position obtained in step S103 and the second position obtained in step S107, and corrects the baseline information by the difference. The correction value ΔBL for correcting the baseline information is expressed by "ΔBL=OAS(0)-OAS(t)" where the first position is "OAS(0)" and the second position is "OAS(t)". ​​In addition, taking into account the components in the X-axis direction and the Y-axis direction, the correction values ​​ΔBLx and ΔBLy for correcting the baseline information can be expressed by the following formula (1). ΔBLx = OASx(0) - OASx(t) ΔBLy=OASy(0)-OASy(t) …(1)

[0049] The first timing (step S103) at which the baseline information is generated and the second timing (step S107) after the first timing may produce different measurement results even though the position of the same reference mark 112 is measured. The reason why the measurement results of the position of the reference mark 112 at the first timing and the second timing are different from each other is considered to be due to the baseline fluctuating due to, for example, the influence of heat generated during the operation of the exposure apparatus EXP. In other words, the difference between the first timing and the second timing regarding the measurement results of the position of the reference mark 112 can be taken as the amount of fluctuation of the baseline. Therefore, by correcting the baseline information based on the difference, the original 1 and the substrate 3 can be aligned with high accuracy for the substrate 3 to be subjected to the exposure process thereafter, and the overlay accuracy can be kept within the allowable range. In addition, by correcting the baseline information for other lots in the same manner, it is possible to avoid generation of baseline information using the projection optical system 6 and the TTL detection system 13, and improve the overlay accuracy while minimizing the decrease in throughput.

[0050] In step S109, the control unit 17 performs exposure processing on each of the multiple shot regions 3a on the n-th substrate 3. Next, in step S110, the control unit 17 determines whether or not the lot contains a substrate 3 to be subjected to exposure processing next (hereinafter, may be referred to as the next substrate 3), that is, whether or not the lot contains a substrate 3 on which exposure processing has not yet been performed. If there is a next substrate 3, the process returns to step S105, and steps S105 to S109 are performed on the next substrate 3. On the other hand, if there is no next substrate 3, the substrate 3 that has been subjected to exposure processing is carried out from the substrate stage 4 by a substrate transport mechanism (not shown), and the flowchart of FIG. 4 ends.

[0051] As described above, the exposure apparatus EXP of the present embodiment corrects the baseline information using only the off-axis detection system 16. This can improve the overlay accuracy and can be advantageous in terms of throughput compared to the case where the baseline information is regenerated or corrected using the TTL detection system 13.

[0052] <Second embodiment> A second embodiment of the present invention will be described. In the above first embodiment, an example was described in which baseline information is corrected by the difference between a first position obtained at a first timing (step S103) and a second position obtained at a second timing (step S107). In this embodiment, an example is described in which baseline information is further corrected by the difference between a first timing and a second timing regarding the distance between a reference point of the substrate stage 4 (e.g., the reflecting surface of the mirror 8) and a reference mark 112 of the reference plate 11a. Note that this embodiment basically follows the first embodiment, and can follow the first embodiment except for the matters mentioned below.

[0053] In the correction of baseline information using only the off-axis detection system 16, there are other advantages to using the reference plate 11a that is closest to the mirror 8 among the multiple reference plates 11a to 11c on the substrate stage 4. As described above, in order to identify the difference between the first position obtained at the first timing (step S103) and the second position obtained at the second timing (step S107) as the amount of baseline variation between the first timing and the second timing, the following premise is necessary. That is, it is assumed that the thermal deformation (thermal expansion / contraction) of the substrate stage 4 itself caused by the temperature change of the substrate stage 4 itself and the surrounding atmosphere can be ignored. In examining the validity of this premise (assumption), it is important to consider the arrangement of the mirror 8 described with reference to FIG. 2. The laser interferometers 10 and 12 that measure the position of the substrate stage 4 are located at positions facing the mirror 8. The reference plate 11a used for correction of baseline information is arranged so that the distance from the mirror 8 in the X-axis direction and the Y-axis direction is shorter than the other reference plates 11b to 11c.

[0054] Generally, the coefficient of thermal expansion, which describes the amount of thermal deformation of a substance per unit temperature change, is a ratio expressed in the dimensionless quantity ppm, and the actual amount of thermal deformation increases the farther away from a reference point. This reference point for the amount of thermal deformation corresponds to the reflecting surface (front surface) of mirror 8 on substrate stage 4. Therefore, the amount by which the position of reference mark 112 on reference plate 11a arranged near the reflecting surface of mirror 8 fluctuates due to thermal deformation of substrate stage 4 is relatively small.

[0055] However, in reality, the distance between the reflecting surface of the mirror 8 and the reference mark 112 of the reference plate 11a is not zero, so the amount of change in the distance due to the temperature (thermal deformation) of the substrate stage 4 is also not zero. As a result, even if the baseline information is corrected as in the first embodiment, a correction residual corresponding to the amount of change in the distance due to the temperature of the substrate stage 4 is generated. Therefore, in this embodiment, the control unit 17 obtains the difference between the first timing and the second timing regarding the distance between the reflecting surface of the mirror 8 and the reference mark 112 of the reference plate 11a based on the temperature difference of the substrate stage 4 at the first timing and the second timing. Then, the baseline information is further corrected by the difference. The temperature difference of the substrate stage 4 at the first timing and the second timing can be obtained by using the temperature detection unit 113 provided on the substrate stage 4. In the following, the distance between the reflecting surface of the mirror 8 and the reference mark 112 may be referred to as the "mark distance".

[0056] Specifically, in step S108, the control unit 17 can obtain a correction value ΔBL for correcting the baseline information by "ΔBL=OAS(0)-{OAS(t)-ΔWS}". In this formula, the first position is "OAS(0)", the second position is "OAS(t)", and the amount of change in the mark distance between the first timing and the second timing for the reference mark 112 of the reference plate 11a is "ΔWS". In addition, taking into account the components in the X-axis direction and the Y-axis direction, the correction values ​​ΔBLx and ΔBLy for correcting the baseline information can be expressed by the following formula (2). ΔBLx = OASx(0) - {OASx(t) - ΔWSx} ΔBLy=OASy(0)-{OASy(t)-ΔWSy} …(2)

[0057] Here, a method for calculating the amounts of change in the mark distance ΔWSx, ΔWSy will be described. The amounts of change in the mark distance ΔWSx, ΔWSy can be calculated based on the thermal expansion coefficient (αx, αy) of the substrate stage 4. The thermal expansion coefficient (αx, αy) may be understood as a coefficient for converting the amount of change in the temperature of the substrate stage 4 into the amounts of change in the mark distance ΔWSx, ΔWSy. The thermal expansion coefficient (αx, αy) can be obtained in advance using reference plates 11a-11c (reference marks 112) provided at each of a plurality of corners of the substrate stage 4 and a temperature detection unit 113 that detects the temperature of the substrate stage 4. For example, the thermal expansion coefficient (αx, αy) can be obtained by performing a simulation operation in an adjustment process before the exposure apparatus EXP is used for production.

[0058] 2, the thermal expansion coefficient (αx, αy) can be obtained using reference plate 11a (top right in the figure) and reference plate 11c (bottom left in the figure), which are diagonally positioned among multiple reference plates 11a to 11c on the substrate stage 4. The design coordinates of reference plate 11a and reference plate 11c differ by (ΔX, ΔY).

[0059] First, in an initial state, the position of the reference mark 112 on the reference plate 11c (lower left in the figure) is measured using the off-axis detection system 16, and the measurement value obtained thereby is defined as (x1, y1). The measurement of the position of the reference mark 112 using the off-axis detection system 16 is performed by measuring the position of the substrate stage 4 with the laser interferometer 10 in a predetermined state in which the reference mark is placed within the field of view of the off-axis detection system 16. Similarly, the position of the reference mark 112 on the reference plate 11a (upper right in the figure) is measured using the off-axis detection system 16, and the measurement value obtained thereby is defined as (x2, y2). These measurement values ​​may vary due to temperature changes in the substrate stage 4 that reflect the operating state of the exposure apparatus EXP.

[0060] Next, in a state in which the reading of the temperature detection unit 113 (i.e., the temperature of the substrate stage 4) has changed due to the operation of the exposure apparatus EXP, a measurement similar to that in the initial state is performed. That is, the position of the reference mark 112 on the reference plate 11c (lower left in the figure) is measured using the off-axis detection system 16, and the measurement value obtained thereby is (x1', y1'). Similarly, the position of the reference mark 112 on the reference plate 11a (upper right in the figure) is measured using the off-axis detection system 16, and the measurement value obtained thereby is (x2', y2'). As a result, when the amount of change in the temperature of the substrate stage 4 from the initial state is ΔTa, the thermal expansion coefficient (αx, αy) of the substrate stage 4 can be obtained by the following formula (3). The thermal expansion coefficient (αx, αy) obtained in advance in this manner can be stored by the storage unit. αx={(x1'-x1)-(x2'-x2)} / (ΔX·ΔTa) αy={(y1'-y1)-(y2'-y2)} / (ΔY·ΔTa) …(3)

[0061] Also, for example, the design mark distance for the reference mark 112 on the reference plate 11a (top right in the figure) is (Lx2, Ly2), and the temperature difference of the substrate stage 4 between the first timing and the second timing is ΔTb. In this case, the control unit 17 can calculate the change amounts ΔWSx and ΔWSy of the mark distance by the following formula (4). The temperature difference ΔTb of the substrate stage 4 can be obtained using the temperature detection unit 113. That is, the difference between the temperature of the substrate stage 4 detected by the temperature detection unit 113 at the first timing and the temperature of the substrate stage 4 detected by the temperature detection unit 113 at the second timing is obtained as the temperature difference ΔTb. ΔWSx=αx ΔTb ​​Lx2 ΔWSy=αy·ΔTb·Ly2 …(4)

[0062] In this way, it is possible to obtain the amounts of change ΔWSx, ΔWSy in the mark distance caused by the temperature (thermal deformation) of the substrate stage 4 by multiplying the thermal expansion coefficient (αx, αy) of the substrate stage 4 by the temperature difference ΔTb and the designed mark distance (Lx2, Ly2). Then, as shown in the above-mentioned formula (2), it is possible to further improve the overlay accuracy by further correcting the baseline information by the amounts of change ΔWSx, ΔWSy in the mark distance.

[0063] <Embodiments of the method for manufacturing an article> The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having fine structures. The article manufacturing method of the present embodiment includes an exposure step of exposing a substrate by controlling an exposure apparatus using the above control method, a processing step of processing the substrate that has undergone the exposure step, and a manufacturing step of manufacturing an article from the substrate that has undergone the processing step. The exposure step may be understood as a step of forming a latent image pattern in a photosensitive material applied to the substrate, and the processing step may be understood as a step of developing the substrate (photosensitive material) on which the latent image pattern has been formed. Furthermore, the article manufacturing method includes other well-known steps (oxidation, film formation, deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The article manufacturing method of the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to conventional methods.

[0064] <Summary of the embodiment> The disclosure of this specification includes at least the following exposure apparatus, control method, and article manufacturing method. (Item 1) An exposure apparatus that exposes a substrate through a projection optical system, comprising: a stage for holding and moving the substrate; an imaging unit that images the mark on the substrate without passing through the projection optical system; A measurement unit that measures a position of the stage; a control unit that controls alignment of the substrate based on a position of the mark obtained by using the imaging unit and the measurement unit and distance information indicating a distance between an optical axis of the imaging unit and an optical axis of the projection optical system, The control unit is At a first timing when the interval information is generated, a position of the stage in a predetermined state in which a reference mark on the stage is disposed within a field of view of the imaging unit is measured as a first position by the measurement unit; an exposure apparatus comprising: at a second timing that is later than the first timing, the position of the stage in the specified state is measured as a second position by the measurement unit; and the interval information is corrected based on a difference between the first position and the second position. (Item 2) The measurement unit is configured to measure a position of a reference point of the stage, a distance between the reference point on the stage and the reference mark varies due to a temperature of the stage; The exposure apparatus described in item 1, characterized in that the control unit calculates a difference in distance between the first timing and the second timing based on a temperature difference of the stage at the first timing and the second timing, and further corrects the spacing information based on the calculated difference in distance. (Item 3) When the first position is "OAS(0)", the second position is "OAS(t)", and the difference in distance is "ΔWS", the control unit calculates a correction value ΔBL for correcting the interval information as follows: ΔBL=OAS(0)-{OAS(t)-ΔWS} 3. The exposure apparatus according to item 2, wherein the calculation is performed by the following formula: (Item 4) A temperature detector for detecting a temperature of the stage is further provided. 4. The exposure apparatus according to item 2 or 3, wherein the control unit obtains the temperature difference based on a detection result of the temperature detection unit at each of the first timing and the second timing. (Item 5) The exposure apparatus described in any one of items 2 to 3, characterized in that the control unit acquires in advance a coefficient for converting a change in temperature of the stage into a change in distance, and calculates the difference in distance based on the temperature difference and the coefficient. (Item 6) a second imaging unit configured to image the mark on the substrate via the projection optical system, the control unit generates the interval information based on a difference between a measurement result of the measurement unit in a state in which a second reference mark on the stage is located within a field of view of the imaging unit, and a measurement result of the measurement unit in a state in which the second reference mark is located within a field of view of the second imaging unit, at the first timing; 6. The exposure apparatus according to any one of items 2 to 5, wherein, on the stage, the reference mark is closer to the reference position than the second reference mark. (Item 7) When the stage is disposed at a substrate loading location, the reference mark is closer to the imaging unit than the second reference mark; 7. The exposure apparatus according to item 6, wherein the substrate loading location is a location where the stage is placed when the substrate is loaded onto the stage. (Item 8) the measurement unit includes an interferometer; 8. The exposure apparatus according to any one of items 2 to 7, wherein the reference point is a point on the stage where a reflective surface that reflects light from the interferometer is provided. (Item 9) The measurement unit includes an encoder. 8. The exposure apparatus according to any one of items 2 to 7, wherein the reference location is a location on the stage where a scale of the encoder is provided. (Item 10) 10. The exposure apparatus according to any one of items 1 to 9, wherein the predetermined state is a state in which the reference mark is disposed at a predetermined position within a field of view of the imaging unit. (Item 11) 11. The exposure apparatus according to item 10, wherein the predetermined position is the center of the field of view of the imaging section. (Item 12) 1. A control method for an exposure apparatus comprising: a projection optical system; a stage that holds and moves a substrate; an imaging unit that images a mark on the substrate without using the projection optical system; and a measurement unit that measures a position of the stage, the control method performing alignment of the substrate based on a position of the mark obtained using the imaging unit and the measurement unit and distance information that indicates a distance between an optical axis of the imaging unit and an optical axis of the projection optical system, comprising: measuring, by the measurement unit as a first position, a position of the stage in a predetermined state in which a reference mark on the stage is disposed within a field of view of the imaging unit at a first timing when the interval information is generated; measuring a position of the stage in the predetermined state as a second position by the measurement unit at a second timing that is later than the first timing, and correcting the interval information based on a difference between the first position and the second position; A control method comprising: (Item 13) an exposure step of exposing a substrate by controlling an exposure apparatus using the control method according to item 12; a processing step of processing the substrate that has been subjected to the exposure step; a manufacturing process for manufacturing an article from the substrate that has been subjected to the processing process; A method for manufacturing an article, comprising:

[0065] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0066] 1: original, 2: original stage, 3: substrate, 4: substrate stage, 6: projection optical system, 10: laser interferometer (measurement unit), 13: original position detection system (TTL detection system), 16: position detection system (off-axis detection system, imaging unit), 17: control unit, EXP: exposure device

Claims

1. An exposure apparatus that exposes a substrate through a projection optical system, comprising: a stage for holding and moving the substrate; an imaging unit that images the mark on the substrate without passing through the projection optical system; A measurement unit that measures a position of the stage; a control unit that controls alignment of the substrate based on a position of the mark obtained by using the imaging unit and the measurement unit and distance information indicating a distance between an optical axis of the imaging unit and an optical axis of the projection optical system, The control unit is measuring, by the measurement unit as a first position, a position of the stage in a predetermined state in which a reference mark on the stage is disposed within a field of view of the imaging unit at a first timing when the interval information is generated; an exposure apparatus characterized in that, at a second timing after the first timing, the position of the stage in the specified state is measured as a second position by the measurement unit, and the interval information is corrected based on a difference between the first position and the second position.

2. The measurement unit is configured to measure a position of a reference point of the stage, a distance between the reference point on the stage and the reference mark varies due to a temperature of the stage; The exposure apparatus according to claim 1, wherein the control unit calculates a difference in distance between the first timing and the second timing based on a temperature difference of the stage between the first timing and the second timing, and further corrects the interval information based on the calculated difference in distance.

3. When the first position is "OAS(0)", the second position is "OAS(t)", and the difference in distance is "ΔWS", the control unit calculates a correction value ΔBL for correcting the interval information as follows: ΔBL=OAS(0)-{OAS(t)-ΔWS} 3. The exposure apparatus according to claim 2, wherein the calculation is performed by:

4. A temperature detector for detecting a temperature of the stage is further provided.

4. The exposure apparatus according to claim 2, wherein the control unit obtains the temperature difference based on detection results of the temperature detection unit at each of the first timing and the second timing.

5. 4. The exposure apparatus according to claim 2, wherein the control unit acquires in advance a coefficient for converting a change in temperature of the stage into a change in distance, and calculates the difference in distance based on the temperature difference and the coefficient.

6. a second imaging unit configured to image the mark on the substrate via the projection optical system, the control unit generates the interval information based on a difference between a measurement result of the measurement unit in a state in which a second reference mark on the stage is disposed within a field of view of the imaging unit, and a measurement result of the measurement unit in a state in which the second reference mark is disposed within a field of view of the second imaging unit, at the first timing; 4. The exposure apparatus according to claim 2, wherein, on the stage, the reference mark is closer to the reference position than the second reference mark.

7. When the stage is disposed at a substrate loading location, the reference mark is closer to the imaging unit than the second reference mark; 7. The exposure apparatus according to claim 6, wherein the substrate loading location is a location where the stage is placed when the substrate is loaded onto the stage.

8. the measurement unit includes an interferometer; 4. The exposure apparatus according to claim 2, wherein the reference location is a location on the stage where a reflective surface that reflects the light from the interferometer is provided.

9. The measurement unit includes an encoder.

4. The exposure apparatus according to claim 2, wherein the reference location is a location on the stage where a scale of the encoder is provided.

10. 4. The exposure apparatus according to claim 1, wherein the predetermined state is a state in which the reference mark is disposed at a predetermined position within a field of view of the imaging section.

11. 11. The exposure apparatus according to claim 10, wherein the predetermined position is the center of the field of view of the imaging unit.

12. 1. A control method for an exposure apparatus comprising: a projection optical system; a stage that holds and moves a substrate; an imaging unit that images a mark on the substrate without using the projection optical system; and a measurement unit that measures a position of the stage, the control method performing alignment of the substrate based on a position of the mark obtained using the imaging unit and the measurement unit and distance information that indicates a distance between an optical axis of the imaging unit and an optical axis of the projection optical system, comprising: measuring, by the measurement unit as a first position, a position of the stage in a predetermined state in which a reference mark on the stage is disposed within a field of view of the imaging unit at a first timing when the interval information is generated; measuring a position of the stage in the predetermined state as a second position by the measurement unit at a second timing that is later than the first timing, and correcting the interval information based on a difference between the first position and the second position; A control method comprising:

13. an exposure step of exposing a substrate by controlling an exposure apparatus using the control method according to claim 12; a processing step of processing the substrate that has been subjected to the exposure step; a manufacturing process for manufacturing an article from the substrate that has been subjected to the processing process; A method for manufacturing an article, comprising:

Images