Film formation device and suction method

Abstract

To provide a technique for stably maintaining a suction state while sucking a substrate by a suction member in a stable state.SOLUTION: A film formation device that forms a film by adhering a film formation material to a substrate, comprises: a plurality of support members that supports a peripheral edge part of a first surface in which a film formation is performed in the substrate; a plurality of contact members that is the plurality of contact members that is faced to each of the plurality of support members, and is contacted to a second surface that is opposite to a first surface of the substrate; a push-up member of which the first surface of the substrate is supported by the plurality of support members, and which pushes up a region of an inner side from a peripheral edge part from the first surface of the substrate in a state where a plurality of contact members is contacted to the second surface; and a suction member that sucks the second surface of the substrate in the state where the region in the inner side of the substrate is pushed up.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a film forming apparatus and an adsorption method. [Background technology]

[0002] In recent years, panels such as organic electroluminescence (EL) display devices have come into widespread use, and their application fields are expanding beyond smartphones to large panels such as large televisions. As substrates become larger, adsorption members that adsorb substrates have begun to be used to stably support the substrates in film formation devices that manufacture panels by depositing evaporation materials onto the substrates.

[0003] For example, Patent Document 1 discloses a method for reducing deflection of a substrate due to its own weight as the substrate becomes larger, in which an electrostatic chuck is placed on top of the substrate and a voltage is applied to the electrostatic chuck to attract the upper surface of the substrate by electrostatic attraction, thereby reducing deflection of the substrate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2019-099910 A Summary of the Invention [Problem to be solved by the invention]

[0005] If the size of the substrate continues to increase, the substrate will bend more when it is placed on the support before it is attached to the attachment member, making it difficult for the attachment member to stably attach the substrate, or even if it is able to attach the substrate, the substrate may later peel off.Therefore, there is a demand for a device that enables the attachment member to stably attach large substrates and prevents the substrate from peeling off or falling off later.

[0006] The present invention has been made in consideration of the above problems, and has an object to provide a technique for stably attracting a substrate by an attraction member and stably maintaining the attracted state. [Means for solving the problem]

[0007] The present invention employs the following configuration. A film forming apparatus for depositing a film forming material onto a substrate, comprising: A plurality of support members for supporting a peripheral portion of a first surface of the substrate on which a film is formed; a plurality of abutment members facing the plurality of support members, respectively, and abutting a second surface of the substrate opposite the first surface; a push-up member that pushes up an area of ​​the first surface of the substrate that is located inside the peripheral portion while the first surface of the substrate is supported by the plurality of support members and the plurality of abutment members are in contact with the second surface; an adsorption member that adsorbs the second surface of the substrate while the inner region of the substrate is pushed up; The film forming apparatus is characterized by comprising: The present invention also employs the following configuration. 1. A method for adsorbing and holding a substrate in a film forming apparatus that deposits a film on a substrate by applying a film forming material thereto, comprising: supporting a peripheral portion of a first surface of the substrate on which a film is to be formed by a plurality of support members; A plurality of abutment members facing the plurality of support members, respectively, are connected to the first surface of the substrate. abutting the second surface against an opposing second surface; a step of pushing up an area of ​​the first surface of the substrate that is located inside the peripheral portion by a push-up member; adsorbing the second surface of the substrate by an adsorption member; It is an adsorption method having the following structure. Effect of the Invention

[0008] According to the present invention, it is possible to provide a technique for suctioning a substrate by an attraction member in a stable state and for stably maintaining the attracted state. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a plan view showing a configuration of a film forming apparatus. [Diagram 2] Schematic cross-sectional view of the deposition chamber [Diagram 3] Substrate suction flow chart [Figure 4] 1 is a schematic cross-sectional view of a main part of a film forming chamber related to the operation of the embodiment; [Diagram 5] 1 is a schematic cross-sectional view of a main part of a film forming chamber related to the operation of the embodiment; [Figure 6] 1 is a schematic cross-sectional view of a main part of a film forming chamber related to the operation of the embodiment; [Figure 7] 1 is a schematic cross-sectional view of a main part of a film forming chamber related to the operation of the embodiment; [Figure 8] FIG. 1 is a diagram illustrating an example of a push-up member. [Figure 9] FIG. 13 is a diagram illustrating another example of the lift-up member. [Figure 10] FIG. 13 is a diagram illustrating another example of the lift-up member. [Figure 11] FIG. 13 is a diagram illustrating another example of the lift-up member. [Figure 12] FIG. 1 is an explanatory diagram of an organic EL display device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiment of the present invention will be described in detail with reference to the drawings. However, the dimensions, materials, shapes, relative positions, and the like of the components described in the embodiment are not intended to limit the scope of the present invention unless otherwise specified.

[0011] The present invention is suitable for a film forming apparatus that forms a thin film of a film forming material on a surface of a film forming object such as a substrate by deposition or the like. The present invention can be understood as an electrostatic chuck, a substrate holding apparatus, a film forming apparatus, and a control method using these apparatuses. The present invention can also be understood as an electronic device manufacturing apparatus and a control method thereof, and an electronic device manufacturing method. The present invention can also be understood as a program for causing a computer to execute the control method or manufacturing method, or a storage medium storing the program. The storage medium may be a non-transitory storage medium readable by a computer. The present invention can also be understood as a substrate adsorption method or holding method.

[0012] In the present invention, any material can be used for the substrate, such as glass, resin, metal, silicon, etc. Any material can be used for the film formation, such as organic materials and inorganic materials (metals, metal oxides). In the following description, the term "substrate" includes substrate materials on whose surfaces one or more films have already been formed. The technology of the present invention is typically applied to manufacturing equipment for electronic devices and optical components. In particular, it is suitable for organic electronic devices, such as organic EL displays equipped with organic EL elements and organic EL display devices using the same. The present invention can also be used for thin-film solar cells and organic CMOS image sensors.

[0013] <Example 1> (Device configuration) FIG. 1 is a plan view showing a schematic configuration of a film forming apparatus 1. When manufacturing an OLED display, a substrate of a specified size is brought into the production line, and after the organic EL and metal layers are deposited, post-processing steps such as cutting the substrate are carried out.

[0014] The film formation apparatus 1 includes a transfer chamber 130 disposed in the center, and a plurality of film formation chambers 110 (110a to 110d) and a mask stock chamber 120 (120a, 120b) disposed around the transfer chamber 130. The film formation chamber 110 includes a chamber in which a film formation process is performed on a substrate 10. The mask stock chamber 120 stores masks before and after use. A transfer robot 140 installed in the transfer chamber 130 transfers the substrate S and mask M into and out of the transfer chamber 130. The transfer robot 140 is, for example, a robot having a robot hand for holding the substrate S and mask M attached to an articulated arm.

[0015] The pass chamber 150 transports the substrate S flowing from the upstream side in the substrate transport direction to the transport chamber 130. The buffer chamber 160 transports the substrate S, for which the film formation process in the transport chamber 130 has been completed, to another film formation cluster on the downstream side. When the transport robot 140 receives the substrate S from the pass chamber 150, it transports it to one of the multiple film formation chambers 110. The transport robot 140 also receives the substrate S, for which the film formation process has been completed, from the film formation chamber 110 and transports it to the buffer chamber 160.

[0016] 1 constitutes one film formation cluster, and other film formation clusters can be connected to the upstream or downstream side. A swirl chamber 170 for changing the direction of the substrate 10 is provided further upstream of the pass chamber 150 and further downstream of the buffer chamber 160. Each chamber, such as the film formation chamber 110, the mask stock chamber 120, the transfer chamber 130, the buffer chamber 160, and the swirl chamber 170, is maintained in a high vacuum state during the manufacturing process.

[0017] The film forming materials in the film forming chambers 110a to 110d of the film forming apparatus 1 may be the same or different. For example, a film forming source of a different film forming material may be arranged in each of the film forming chambers 110a to 110d, and a laminated structure may be formed while the substrate S moves in sequence through the film forming chambers 110a to 110d. Alternatively, a film forming source of the same film forming material may be arranged in the film forming chambers 110a to 110d, so that films may be formed in parallel on the substrates S. Alternatively, a first film forming material may be arranged in the film forming chambers 110a and 110c, and a second film forming material may be arranged in the film forming chambers 110b and 110d, and the first layer may be formed in the film forming chamber 110a or 110c, and then the second layer may be formed in the film forming chamber 110b or 110d.

[0018] Depending on the type of electrostatic chuck, the force of adsorption of the substrate can be increased when a conductor is attached to the substrate. In such a case, the electrostatic chuck can be effectively adsorbed when a thin film of a metal material that will become an electrode layer has already been formed in the region of the substrate where the organic EL element is to be formed (typically the center of the substrate). For example, when an electrode layer is formed on a substrate in the deposition chamber 110a, and organic layers are sequentially formed in the deposition chambers 110b to 110d, it is effective to place electrostatic chucks in the deposition chambers 110b to 110d.

[0019] (Film forming chamber) 2 is a cross-sectional view showing the internal configuration of the film formation chamber 110. In the film formation chamber 110, a series of film formation processes are performed, such as receiving the substrate S and mask M from the transfer robot 140, transferring the substrate S and mask M to the transfer robot 140, holding the substrate S with the electrostatic chuck C, alignment for adjusting the relative positional relationship between the substrate S and mask M, fixing the substrate S to the mask M, and film formation. In the following description, an XYZ orthogonal coordinate system is used in which the vertical direction is the Z direction, and rotation around the Z axis is represented by θ. For simplification, for members that appear symmetrically, a reference symbol is attached to only one of the left and right sides.

[0020] The film forming chamber 110 includes a chamber 200. The inside of the chamber 200 is kept in vacuum during film formation. The chamber 200 is maintained in an atmosphere of nitrogen gas or an inert gas atmosphere. An electrostatic chuck C, a plurality of substrate support parts 232a (a plurality of support members), a mask table 221, an evaporation source 240 (film formation source), and the like are provided inside the chamber 200. The interior of the chamber will be described below, focusing on the configuration for moving the substrate S, the mask M, the electrostatic chuck C, and the magnet G. In the following description, the mechanism for raising and lowering or moving each member can be realized by a combination of an existing drive mechanism, for example, a ball screw or a rack-and-pinion mechanism that operates using the driving force of a motor, and therefore a detailed description will be omitted.

[0021] The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate. For example, a metal mask in which a metal foil on which a pattern is formed is supported by a frame can be used as the mask M. When the mask M is carried into the chamber 200, it is first placed on the temporary mask holder 224a. The temporary mask holder lifting mechanism 224 is fixed to the chamber ceiling 200a via the temporary mask holder support plate 224b, and can lift and lower the temporary mask holder 224a (as indicated by the arrow E in the figure). The temporary mask holder lifting mechanism 224 lowers the temporary mask holder 224a, so that the mask M placed on the temporary mask holder 224a is placed on the mask table 221.

[0022] The mask table 221 in this embodiment is a magnetic levitation mechanism having a first magnetic generator 221a. The film formation chamber 110 is provided with a mask table support mechanism 222 having a second magnetic generator 222a, which is suspended and fixed to the chamber ceiling 200a. The control unit 270 controls the voltages applied to the first magnetic generator 221a and the second magnetic generator 222a, so that the mask table 221 is magnetically levitated by electromagnetic force. In the levitated state, XY movement and θ rotation can be performed by magnetic force (indicated by a cross-shaped arrow L in the figure). The mask table support mechanism 222 further has a mask table support part 222b that supports the mask table 221 when the mask table 221 is not levitated. However, the mechanism for supporting and moving the mask is not limited to a method using magnetic force. Furthermore, the method using magnetic force is not limited to a method in which the mask table 221 is levitated. For example, in a system in which the mask stage 221 rolls and moves using bearings or the like, magnetic force may be used for the movement.

[0023] When the substrate S is carried into the chamber 200, it is supported by a plurality of claw-shaped substrate support parts 232a. The substrate support part lifting mechanism 232 can change the height of the substrate S in the Z direction (direction perpendicular to the substrate surface) by raising and lowering the substrate support parts 232a using a drive mechanism (indicated by arrow F in the figure). In this embodiment, the substrate S is placed approximately horizontally, the surface to be deposited faces downward, and a deposit-up method is adopted in which the evaporated material discharged from below adheres to the substrate S.

[0024] Here, above the chamber 200, a base portion 238 is fixed to the chamber ceiling 200a. Also provided above the chamber 200 is a lift plate 230 attached to the base portion 238 so as to be movable up and down. That is, the lift plate 230 can move up and down in the Z direction while remaining parallel to the chamber ceiling 200a. An electrostatic chuck C is installed on this lift plate 230 via an electrostatic chuck support shaft 230a, and a substrate support portion lifting mechanism 232 is also installed thereon. That is, by moving the lift plate up and down, the electrostatic chuck C and the substrate support portion 232a can move together without changing their relative positional relationship.

[0025] Furthermore, in this embodiment, a boost member 246a is connected to the lift plate 230 via a boost member support portion 246 such as a shaft. The film formation chamber is preferably provided with a retraction mechanism for moving the boost member 246a between a boost position, which is a position facing the center of the film formation surface of the substrate S, and a retracted position that is out of the area facing the substrate. The boost member 246a can be made of any material such as metal, resin, or rubber, but it is preferable to use a material that does not damage the surface even when it receives the load of the substrate S, at least in the contact portion. Note that, when the film formation surface of the substrate S is The central part of the film surface is at least a region different from the peripheral part clamped by the substrate support part 232a and the substrate contact part 232b, and can also be called the pushed-up part. The central part is typically a region inside the peripheral part. Note that the push-up member 246a can contact even the edge of the substrate S as long as it is a region that is not clamped, and for example, the region facing the push-up member 246a in FIG. 8(b) described later can be called the pushed-up part.

[0026] As the lift plate 230 moves in the Z direction, the boost member 246a also moves. Alternatively, the boost member support section 246 may have a drive mechanism for moving the boost member 246a up and down. When the drive mechanism operates, the boost member 246a moves (indicated by arrow P in the figure) and comes into contact with the substrate S, it can support the load of the substrate S.

[0027] Furthermore, in the substrate support part lifting mechanism 232, a plurality of substrate abutment parts 232b (a plurality of abutment members) are provided at positions facing the respective substrate support parts 232a. With the substrate S placed on the substrate support parts 232a, the control part 270 lowers the substrate abutment parts 232b, thereby clamping the substrate S between the substrate support parts 232a and the substrate abutment parts 232b. When clamping, the substrate S can be completely fixed, or the substrate S may be held with a certain amount of gap, allowing it to be moved within a predetermined regulated range.

[0028] The electrostatic chuck C is a member for attracting the substrate S in the film formation chamber, and attracts and holds the substrate S supported by the substrate support part 232a by electrostatic force. The electrostatic chuck C abuts against the surface (second surface) of the substrate S opposite to the surface (first surface, film formation surface) that contacts the mask M. As described above, the electrostatic chuck C also moves with the movement of the lift plate 230 in the Z direction. When the electrostatic chuck C holds the substrate S supported by the substrate support part 232a, first, the substrate support part lift mechanism 232 lifts the substrate S and / or the lift plate 230 lowers the electrostatic chuck C to bring the electrostatic chuck C into contact with or sufficiently close to the substrate S. Then, the control part 270 controls the power source 290 to apply a predetermined attracting voltage to the electrode embedded in the electrostatic chuck C. Then, an electrostatic force is generated, and the electrostatic chuck C attracts and holds the substrate S.

[0029] A magnet G for attracting the mask M is disposed above the electrostatic chuck C in the Z direction. The magnet G is connected to a magnet lifting mechanism 244 installed on the base 238 via a shaft. When the magnet lifting mechanism 244 operates the drive device, the magnetic force of the magnet G affects the mask M via the electrostatic chuck C and the substrate S, and the mask M is attracted upward. This increases the degree of contact between the mask M and the substrate S, improving the accuracy of the film formation. It is preferable to provide a cooling member inside or on top of the electrostatic chuck C or inside or on top of the magnet G to suppress a temperature rise in the substrate S during film formation and prevent the organic material from changing or deteriorating.

[0030] The evaporation source 240 is a film formation source including a container such as a crucible for accommodating an evaporation material, a heater, a shutter, a driving mechanism, an evaporation rate monitor, etc. As the evaporation material, any material necessary for forming a desired film, such as a metal material or an organic material, can be used. Note that the film formation source is not limited to an evaporation source, and a sputtering device may also be used.

[0031] In this manner, in the configuration of this embodiment, the positions, heights and relative distances of the substrate S, mask M and electrostatic chuck C can be adjusted by driving the substrate S, mask M and electrostatic chuck C, respectively. By combining this with potential control by the control unit 270, various operations required for film formation can be performed, such as holding the substrate S and mask M by the electrostatic chuck C and magnet G, and adjusting the relative positions (alignment) of the substrate S and mask M. Note that as long as these operations can be performed, the configuration of this embodiment is not limited. For example, the alignment means for the substrate S and mask M may move either the substrate S or the mask M, or may move both. As for movement in the Z direction, any of the substrate S, mask M and electrostatic chuck C may be moved. You may do so.

[0032] A camera 261 that performs optical imaging and generates image data is provided at the top of the chamber 200. The camera 261 performs imaging through a vacuum sealing window provided in the chamber 200. In this embodiment, a plurality of (four) cameras 261 are provided so as to correspond to the four corners of the substrate S. Each camera 261 is disposed so that the imaging range includes a substrate alignment mark provided at a corner of the substrate S and a mask alignment mark provided at a corner of the mask M.

[0033] During alignment, the camera 261 captures images of the substrate S and mask M and outputs image data to the control unit 270. The control unit 270 analyzes the image data and acquires position information of the substrate alignment mark and the mask alignment mark by a method such as pattern matching processing. Then, based on the positional deviation amount of the substrate alignment mark and the mask alignment mark, it calculates the XY direction, the movement distance, and the rotation angle θ when the substrate S and the mask M are moved relatively. Then, the calculated movement amount is converted into the drive amount of each drive mechanism, and a control signal is generated. Note that two-stage alignment may be performed using a camera for rough alignment with a low resolution but a wide field of view and a camera for fine alignment with a narrow field of view but a high resolution.

[0034] The control unit 270 is an information processing device that communicates with each component via a control line or wireless communication (not shown) to receive data or send a signal to control the operation. The control unit 270 can be configured by a computer having, for example, a processor, a memory, a storage, an I / O, and the like. In this case, the function of the control unit 270 is realized by the processor executing a program stored in the memory or storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logic controller) may be used. Alternatively, some or all of the functions of the control unit 270 may be configured by a circuit such as an ASIC or an FPGA. Note that a control unit 270 may be provided for each deposition chamber, or one control unit 270 may control multiple deposition chambers.

[0035] The power supply 290 is a high-voltage power supply device that supplies voltage to each component via conductive wires (not shown). The power supply 290 controls the polarity and magnitude of the applied voltage according to instructions from the control unit 270. By controlling the polarity and magnitude of the voltage (attraction voltage) applied to the electrodes of the electrostatic chuck C, the adsorption force to the substrate S can be controlled. In addition, by controlling the voltages applied to the first magnetic field generating unit 221a and the second magnetic field generating unit 222a, the levitation and alignment of the mask table 221 can be controlled. The power supply 290 and the control unit 270 may be considered to constitute a power supply for the film forming apparatus.

[0036] The application of the present invention is not limited to the cluster-type deposition apparatus described above, but can also be applied to an in-line deposition apparatus in which a plurality of chambers are connected in a vacuum and a substrate held by a substrate carrier is moved between the chambers to deposit a film.

[0037] (Electrostatic Chuck) Electrostatic chuck C has a structure in which an electric circuit such as a metal electrode is embedded in a plate-shaped substrate made of ceramics or the like. Generally, electrostatic chucks are classified into types such as gradient force type, Coulomb force type, and Johnsen-Rahbek force type according to the principle of attracting the substrate, and in all cases, the attracting force can be increased by increasing the attracting voltage applied. One example of a manufacturing method for electrostatic chuck C is to place electrodes on a ceramic sprayed layer made of a titanium base material and an insulating layer, form a dielectric layer, and finally seal it with ceramic spraying.

[0038] A gradient force type electrostatic chuck attracts an object by utilizing an attractive force generated toward an area with a potential gradient (gradient) generated by a potential difference between electrodes. The gradient force is generated even if the object to be attracted is an insulator, so it can hold even bare glass or a glass substrate with no conductive film formed thereon. When generating the gradient force, an attraction voltage is applied so that the potential of the first electrode is higher than the reference potential of the object to be attracted and the potential of the second electrode is lower than the reference potential. In order to increase this gradient force, it is necessary to reduce the space between the electrodes and to arrange the electrodes closely together in order to make the potential gradient as steep as possible. Therefore, two comb-tooth electrodes with a structure in which the protruding comb teeth interdigitate with each other are suitable as electrodes for use in a gradient force type electrostatic chuck.

[0039] The Coulomb force type electrostatic chuck attracts an object to be attracted by electrostatic attraction generated by applying a positive potential voltage and a negative potential voltage to two electrodes, respectively, and is effective when the object to be attracted is a conductor. Therefore, it can be effectively attracted to a substrate on which an electrode layer of a metal material has already been formed. When the object to be attracted is in a floating state not connected to ground, it is possible to attract the object by generating polarization in the object to be attracted by facing both the positive and negative electrodes. When the object to be attracted is grounded, it can be attracted by at least one of the positive and negative electrodes. The Coulomb force is generally stronger than the gradient force. Also, the larger the area of ​​the electrode facing the object to be attracted, the stronger the attraction force. Therefore, in order to increase the attraction force, it is necessary to increase the ratio of the electrode area to the area of ​​the electrostatic chuck as much as possible.

[0040] The Johnson-Rahbek force type electrostatic chuck attracts a conductive object by passing a leakage current through the positive electrode, the object, and the negative electrode in that order, and requires a dielectric with a volume resistance value in a specified range to be placed between the electrode and the object. The Johnson-Rahbek force is generally stronger than the Coulomb force. Also, in the Johnson-Rahbek force type electrostatic chuck, the larger the contact area with the object, the stronger the chucking force can be.

[0041] (Processing flow) A process including a method for adsorbing a substrate S in this embodiment will be described with reference to the flow chart of Fig. 3. Figs. 4 to 7 are schematic cross-sectional views showing the state inside the chamber 200 of the film formation chamber 110 during processing, and parts that are not relevant to the description of the steps are omitted.

[0042] This flow starts when the substrate S is carried into the film formation chamber 110 by the transfer robot 140. In step S101, as shown in Fig. 4(a), the substrate support part 232a receives and supports the carried-in substrate S. Although it depends on the size of the substrate S, the central part of the substrate S whose end part is supported bends and sags due to its own weight.

[0043] In step S102, as shown in Fig. 4(b), the substrate contact portion 232b descends to clamp an end of the substrate S between the substrate support portion 232a and the substrate contact portion 232b (arrow S). At this time, the distance R in the Z direction between the substrate support portion 232a and the substrate contact portion 232b is longer than the thickness of the substrate S. That is, the substrate support portion 232a and the substrate contact portion 232b (together also referred to as a clamp portion) do not completely fix the substrate S, but clamp it with a certain clearance width. This allows the substrate S to move within the XY plane while restricting the movement of the substrate S in the Z direction within a certain range.

[0044] In step S103, as shown in FIG. 5(a), the boost member support 246 raises the boost member 246a to push up the center of the substrate S (arrow P). This reduces the bending of the substrate S and improves its flatness. At this time, the clearance in the Z direction described above is As a result, the end of the substrate S extends in the peripheral direction of the substrate S while maintaining its position between the substrate supporting portion 232a and the substrate abutting portion 232b. Therefore, the bending of the central portion of the substrate S does not propagate when the substrate S is pushed up, so the substrate S does not waver or jump up, and maintains a flat shape.

[0045] 5(a), the electrostatic chuck C attracts the substrate S. At this time, the electrostatic chuck C is lowered by driving the lift plate 230, and when the relative distance between the electrostatic chuck C and the substrate S becomes sufficiently close, the control unit 270 controls the power supply 290 to apply an attracting voltage to the electrostatic chuck C. The electrostatic force generated thereby causes the electrostatic chuck C to attract and hold the substrate S. After the substrate S is held, it is not necessarily required to clamp the substrate, so the substrate support portion 232a, the substrate contact portion 232b, the push-up member 246a, and the like may be retracted.

[0046] 6, the substrate S and the mask M are aligned. At this time, the mask M on the mask table 221 is in a levitated state by the electromagnetic force between the first magnetic field generator 221a of the mask table 221 and the second magnetic field generator 222a of the mask table support mechanism 222, while maintaining a predetermined alignment distance in the Z direction between the mask M and the substrate S. Then, the control unit 270 controls the voltages applied to the first magnetic field generator 221a and the second magnetic field generator 222a to move the mask table 221 in the XY direction and rotate it by θ so that the substrate alignment marks at the four corners of the substrate and the mask alignment marks at the four corners of the mask, which are imaged by the camera 261, have a predetermined positional relationship.

[0047] When the alignment is completed, in step S106, as shown in FIG. 7, the control unit 270 raises the mask stage 221 to bring the mask M and the substrate S into contact with each other. In addition, the magnet G is lowered to attract the mask M upward by magnetic force. This completes the combination of the substrate S and the mask M. Then, the control unit 270 applies a current to the heater of the evaporation source 240 to heat the inside of the crucible to a high temperature, thereby vaporizing the evaporation material. As a result, the evaporation material flies toward the deposition surface of the substrate S, and a thin film is formed according to the predetermined pattern of the mask M.

[0048] According to the method shown in the above flow chart, when the electrostatic chuck C attracts the substrate S, the central portion of the substrate S is pushed up, thereby reducing the bending of the substrate S and improving the flatness of the substrate S. Therefore, even if the substrate is relatively large, rippling and jumping are suppressed when the substrate is attracted by the electrostatic chuck C, and it is possible to prevent the substrate from peeling off or falling off after being attracted.

[0049] (Push-up member) Various examples of the boost member 246a applicable to this embodiment will be described below. The boost member 246a may have any shape or material as long as it has the function of pushing up the substrate S in the direction opposite to gravity from when the substrate S is supported by the substrate support portion 232a until when the substrate S is attracted to the electrostatic chuck C. In addition, it is preferable to provide a configuration for retracting the boost member 246a from a position facing the substrate after the substrate S is attracted by the electrostatic chuck C so that the boost member 246a does not become an obstacle during alignment or deposition. However, if the retraction mechanism does not interfere with alignment or deposition, the retraction mechanism is not necessarily required.

[0050] FIG. 8 is a diagram for explaining the bar-shaped push-up member 246a. FIG. 8(a) is a YZ cross-sectional view different from the XZ cross-sectional view of FIG. 2. The push-up member 246a is driven upward to push up the center of the substrate S. FIG. 8(b) is an XY plan view, showing the planar positional relationship between the substrate S and the push-up member 246a. FIG. 8(c) is an example of the shape of the bar-shaped push-up member 246a, with its ends connected to a drive mechanism and its center in contact with the substrate S. The push-up member 246a in this figure has an approximately rectangular upper surface, and supports the load of the substrate S by having each side of the upper surface make linear contact with the surface of the substrate S on which a film is to be formed. However, the configuration for supporting the substrate S is not limited to this. For example, the bar-shaped push-up member 246a may be supported by surface contact on the upper surface, or a cushioning material such as resin or rubber may be provided on the upper surface. Also, a wire-shaped member made of a metal material or the like may be used by applying tension to the wire-shaped member.

[0051] 8, the boost member 246a is provided in only one place, but the number is not limited to one, and the number of boost members 246a may be provided according to the size of the substrate S. For example, three bar-shaped boost members 246a may be provided in parallel.

[0052] 9 is a diagram for explaining another example of the bar-shaped push-up member 246a. As shown in FIG. 9(a), the push-up member 246a in this example is divided into two parts, which move up and down in the Z direction in synchronization. As shown in FIG. 9(b) and FIG. 9(c), when performing alignment or deposition, each of the left and right push-up members 246a can slide from a push-up position facing the substrate S to a retreat position. With such a configuration, the effect of stably adsorbing the substrate S can be obtained, and retreating when not being pushed up can be easily performed.

[0053] 9, only one set of boost members 246a is provided, but the number of boost members 246a may be provided according to the size of the substrate S. For example, three sets of bar-shaped boost members 246a may be provided in parallel.

[0054] Fig. 10 shows an example of a push-up member 246a of a type in which the supported end is rotatable in a cantilever shape. As shown in the YX plan view of Fig. 10(a) and the cross-sectional view in the XZ plane of Fig. 10(b), the push-up member 246a pushes up the substrate S with its free end while its fixed end is cantilevered by the support base 246b. After the substrate S is attracted and held by the electrostatic chuck C, the fixed angle of the fixed end is changed by a drive mechanism provided in the support base 246b, and the push-up member 246a can be moved to a retracted position as shown in Fig. 10(c).

[0055] Fig. 11 shows an example of a pin-shaped push-up member 246a that moves up and down in the Z direction. As shown in the cross-sectional view in the XZ plane in Fig. 11(a), the push-up member 246a pushes up the substrate S with one end supported by the support base 246b and the other end. After the substrate S is attracted and held by the electrostatic chuck C, the push-up member 246a can move to a lower retreat position by a driving mechanism provided in the support base 246b as shown in Fig. 11(b). Fig. 11(c) shows an example of a push-up position by the end of the pin on the film formation surface of the substrate S, but is not limited thereto.

[0056] As described above, according to the present invention, the push-up member 246a pushes up the center of the substrate S, thereby reducing the deflection of the substrate S. In addition, the ends of the substrate S are not completely fixed, but are lightly clamped to such an extent that the substrate S can expand, and therefore the deflection of the substrate S is pushed to the ends and absorbed. By the electrostatic chuck C adsorbing the substrate S in this state, rippling and jumping during adsorption are suppressed, enabling the substrate to be stably held. This makes it possible to prevent the substrate from peeling off or falling after adsorption.

[0057] <Electronic device manufacturing method> Next, a description will be given of an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment. Below, the configuration of an organic EL display device will be shown as an example of an electronic device, and a method for manufacturing the organic EL display device will be illustrated.

[0058] First, the organic EL display device to be manufactured will be described. Fig. 12(a) is an overall view of an organic EL display device 180, and Fig. 12(b) shows the cross-sectional structure of one pixel.

[0059] As shown in FIG. 12(a), a display area 151 of an organic EL display device 180 includes light-emitting elements. A plurality of pixels 152 each having a plurality of light emitting elements are arranged in a matrix. Although the details will be described later, each light emitting element has a structure including an organic layer sandwiched between a pair of electrodes. Note that the pixel here refers to the smallest unit that allows a desired color to be displayed in the display area 151. In the case of the organic EL display device according to this embodiment, the pixel 152 is configured by a combination of a first light emitting element 152R, a second light emitting element 152G, and a third light emitting element 152B that emit light different from each other. The pixel 152 is often configured by a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may also be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is not particularly limited as long as it is at least one color.

[0060] Fig. 12(b) is a schematic partial cross-sectional view taken along line AB in Fig. 12(a). The pixel 152 is made up of a plurality of light-emitting elements, and each light-emitting element has a first electrode (anode) 154, a hole transport layer 155, any one of light-emitting layers 156R, 156G, and 156B, an electron transport layer 157, and a second electrode (cathode) 158 on a substrate 153. Among these, the hole transport layer 155, the light-emitting layers 156R, 156G, and 156B, and the electron transport layer 157 correspond to organic layers. In this embodiment, the light-emitting layer 156R is an organic EL layer that emits red light, the light-emitting layer 156G is an organic EL layer that emits green light, and the light-emitting layer 156B is an organic EL layer that emits blue light. The light-emitting layers 156R, 156G, and 156B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively. In addition, the first electrode 154 is formed separately for each light-emitting element. The hole transport layer 155, the electron transport layer 157, and the second electrode 158 may be formed in common for the plurality of light-emitting elements 152R, 152G, and 152B, or may be formed for each light-emitting element. In order to prevent the first electrode 154 and the second electrode 158 from being shorted out by a foreign substance, an insulating layer 159 is provided between the first electrodes 154. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 145 is provided to protect the organic EL element from moisture and oxygen.

[0061] 12(b), the hole transport layer 155 and the electron transport layer 157 are shown as single layers, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. In addition, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 154 to the hole transport layer 155 can be formed between the first electrode 154 and the hole transport layer 155. Similarly, an electron injection layer can be formed between the second electrode 158 and the electron transport layer 157.

[0062] Next, an example of a method for manufacturing an organic EL display device will be specifically described.

[0063] First, a substrate 153 on which a circuit (not shown) for driving the organic EL display device and a first electrode 154 are formed is prepared.

[0064] An acrylic resin is formed by spin coating on the substrate 153 on which the first electrode 154 is formed, and the acrylic resin is patterned by lithography so as to form an opening in the portion where the first electrode 154 is formed, thereby forming an insulating layer 159. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0065] The substrate 153 with the patterned insulating layer 159 is carried into a first organic material film forming apparatus, and the substrate is held by a substrate support table and an electrostatic chuck, and a hole transport layer 155 is formed as a common layer on the first electrode 154 in the display region. The hole transport layer 155 is formed by vacuum deposition. In practice, the hole transport layer 155 is formed to be larger than the display region 151, so no high-resolution mask is required.

[0066] Next, the substrate 153 on which the hole transport layer 155 has been formed is carried into a second organic material film forming apparatus and held by a substrate support table and an electrostatic chuck. The substrate and the mask are aligned, and the substrate The plate is placed on the mask, and a red light emitting layer 156R is formed on the portion of the substrate 153 where the red light emitting element is to be disposed.

[0067] Similar to the formation of the light-emitting layer 156R, a third organic material film formation apparatus is used to form a green light-emitting layer 156G, and a fourth organic material film formation apparatus is used to form a blue light-emitting layer 156B. After the formation of the light-emitting layers 156R, 156G, and 156B is completed, a fifth film formation apparatus is used to form an electron transport layer 157 over the entire display area 151. The electron transport layer 157 is formed as a layer common to the three light-emitting layers 156R, 156G, and 156B.

[0068] The substrate on which the electron transport layer 157 has been formed is moved in a metallic evaporation material deposition apparatus, and a second electrode 158 is deposited.

[0069] Thereafter, the substrate is transferred to a plasma CVD apparatus, where a protective layer 145 is formed, and the organic EL display device 180 is completed.

[0070] If the substrate 153 on which the insulating layer 159 is patterned is exposed to an atmosphere containing moisture or oxygen from the time when it is carried into the film forming apparatus until the film formation of the protective layer 145 is completed, the light emitting layer made of an organic EL material may be deteriorated by moisture or oxygen. Therefore, in this embodiment, the substrate is carried in and out of the film forming apparatus in a vacuum atmosphere or an inert gas atmosphere. [Explanation of symbols]

[0071] 1: film forming device, 232a: substrate support part, 232b: substrate contact part, 246a: push-up part, C: electrostatic chuck, S: substrate

Claims

1. A film deposition apparatus that deposits a film-forming material onto a substrate, A plurality of support members that support the peripheral edge of the first surface on the substrate where a film is formed, A plurality of contact members, each facing the plurality of support members, which contact a second surface of the substrate opposite to the first surface, With the first surface of the substrate supported by the plurality of support members and the plurality of contact members in contact with the second surface, a lifting member pushes up the area of ​​the first surface of the substrate that is inward from the peripheral edge, With the inner region of the substrate being pushed up, an adsorption member adsorbs the second surface of the substrate, A film deposition apparatus characterized by comprising the following features.

2. The system further comprises a film deposition source that discharges the film deposition material from below the substrate, The film is deposited on the substrate with the first surface facing downwards. The film deposition apparatus according to feature 1.

3. In a direction perpendicular to the substrate, the distance between the support member and the contact member is longer than the thickness of the substrate. The film deposition apparatus according to feature 1.

4. The push-up member pushes up the inner region of the substrate while the substrate is held between the support member and the contact member with a clearance between them. The film deposition apparatus according to feature 3.

5. The adsorption member is an electrostatic chuck that adsorbs and holds the substrate by electrostatic force. The system further includes a control unit for controlling the adsorption voltage applied to the adsorption member. The film deposition apparatus according to any one of claims 1 to 4.

6. After the inner region of the substrate is pushed up by the lifting member, the control unit applies the adsorption voltage while the distance between the adsorption member and the substrate is reduced. The film deposition apparatus according to claim 5.

7. The aforementioned film deposition apparatus deposits a film deposition material onto the substrate via a mask to form a predetermined pattern. The film deposition apparatus according to any one of claims 1 to 4.

8. The aforementioned mask is a metal mask, The system further comprises a magnet that attracts the mask by magnetic force via the adsorption member and the substrate. The film deposition apparatus according to feature 7.

9. The system further comprises alignment means for adjusting the relative positions of the substrate and the mask. The film deposition apparatus according to feature 7.

10. The system further includes a retraction mechanism that, after the adsorption member has adsorbed the substrate, retracts the lifting member from the area facing the substrate. The film deposition apparatus according to any one of claims 1 to 4.

11. The aforementioned pushing member is a bar-shaped member. The film deposition apparatus according to any one of claims 1 to 4.

12. The bar-shaped push-up member can slide and retract from the area facing the substrate. The film deposition apparatus according to feature 11.

13. The aforementioned lifting member has a free end that pushes up the substrate and a fixed end that is fixed to the support base. The support base is capable of moving the push-up member between the push-up position and the retracted position. The film deposition apparatus according to any one of claims 1 to 4.

14. The aforementioned push-up member is a pin-shaped member that pushes the substrate upward from below. The film deposition apparatus according to any one of claims 1 to 4.

15. Manufacturing an electronic device using a film deposition apparatus according to any one of claims 1 to 4. A method for manufacturing an electronic device characterized by the following:

16. In a film deposition apparatus that deposits a film-forming material onto a substrate, the substrate is adsorbed and held. Adsorption method, A step of supporting the peripheral edge of the first surface on the substrate where a film is formed using multiple support members, A step of bringing a plurality of contact members, each facing the plurality of support members, into contact with a second surface of the substrate opposite to the first surface, A step of using a push-up member to push up the area of ​​the first surface of the substrate that is inside the peripheral edge, A step of adsorbing the second surface of the substrate with an adsorption member, Adsorption method having

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