Inspection device, film deposition device, inspection method, and production method for electronic device

Abstract

This inspection device comprises: a measurement means that optically measures a film thickness by irradiating a film formed on a substrate with light; and an electrostatic chuck that attracts the substrate by an electrostatic force during measurement by the measurement means. The electrostatic chuck attracts the substrate so that a predetermined range positioned in an irradiation direction of the light emitted by the measurement means does not overlap with the substrate during measurement by the measurement means.

Description

Inspection apparatus, film forming apparatus, inspection method, and method for manufacturing an electronic device

[0001] The present invention relates to an inspection apparatus for measuring the film thickness of a film deposited on a substrate, a film forming apparatus, an inspection method, and a method for manufacturing an electronic device.

[0002] In the manufacture of an organic EL display device (organic EL display) or the like, a vapor deposition material may be vapor-deposited on a substrate held by an electrostatic chuck (ESC). Patent Document 1 discloses measuring the film thickness of a film deposited on a substrate in an inspection chamber.

[0003] Japanese Patent Application Laid-Open No. 2005-322612

[0004] Here, in measuring the film thickness of a film formed on a substrate, light transmitted through the substrate to be measured may be reflected by the ESC, which may affect the measurement accuracy.

[0005] The present invention provides a technique for improving the convenience when measuring the film thickness of a film-formed substrate.

[0006] The film forming apparatus according to the present invention includes: measuring means for optically measuring the film thickness by irradiating light onto a film formed on a substrate; and an electrostatic chuck for adsorbing the substrate by an electrostatic force during measurement by the measuring means. The electrostatic chuck adsorbs the substrate such that a predetermined range located in the irradiation direction of the light irradiated by the measuring means does not overlap with the substrate during measurement by the measuring means.

[0007] Thereby, a technique for improving the convenience when measuring the film thickness of a film-formed substrate can be provided.

[0008] Other features and advantages of the present invention will become apparent from the following description with reference to the accompanying drawings. In the accompanying drawings, the same or similar components are denoted by the same reference numerals.

[0009] The attached drawings are included in the specification and constitute a part thereof, illustrating embodiments of the present invention and are used to explain the principles of the present invention together with the description thereof. Schematic diagram showing a part of the configuration of the film deposition apparatus according to the first embodiment. Schematic diagram for explaining the components of the transfer chamber. Explanatory diagram of film thickness measurement. Perspective view of the adsorption unit. Diagram showing the adsorption surface of the adsorption unit. Diagram showing an example of the configuration of the measurement section. Diagram showing an example of the measurement results of reflectance for each deposited film thickness. Diagram showing reflected light from the adsorption surface. Cross-sectional view of the adsorption unit according to this embodiment. Diagram showing an example of the adsorption unit according to this embodiment. Diagram showing an example of the adsorption unit according to this embodiment. Diagram showing an example of the adsorption unit according to this embodiment. Diagram showing an example of the adsorption unit according to this embodiment. Flowchart showing an example of control of the inspection apparatus. Overall diagram of the organic EL display device. Diagram showing the cross-sectional structure of one pixel. Perspective view of the adsorption unit according to the second embodiment. Diagram showing the processing steps of the adsorption unit. Diagram showing the processing steps of the adsorption unit. Diagram showing the processing steps of the adsorption unit. Diagram showing modified stress distribution section. Diagram showing modified stress distribution section. Diagram showing adsorption unit according to the third embodiment. A diagram showing an adsorption unit according to the third embodiment.

[0010] The embodiments will be described in detail below with reference to the attached drawings. Note that the following embodiments do not limit the invention as defined in the claims, and not all combinations of features described in the embodiments are essential to the invention. Two or more features from the multiple features described in the embodiments may be combined arbitrarily. Furthermore, identical or similar configurations will be given the same reference numeral, and redundant descriptions will be omitted.

[0011] In each figure, the X and Y directions represent the horizontal direction, and the Z direction represents the vertical direction. Furthermore, for the sake of clarity, some reference numerals may be omitted when multiple identical elements are shown.

[0012] <<First Embodiment>> <Film Deposition Apparatus> Figure 1 is a schematic diagram showing the configuration of a film deposition apparatus 1 according to one embodiment. The film deposition apparatus 1 is an apparatus for depositing a film on a substrate 100. The film deposition apparatus 1 is used, for example, in the manufacture of a display panel for an organic EL display device for a smartphone, in which the substrate 100 is sequentially transported to the film deposition block 301, and an organic EL film is deposited on the substrate 100.

[0013] The deposition block 301 has a transport chamber 302 which has an octagonal shape in plan view, surrounded by multiple deposition chambers 303a to 303d where the deposition process on the substrate 100 is performed, and a mask storage chamber 305 where masks before and after use are stored. A transport robot 302a is positioned in the transport chamber 302 to transport the substrate 100. The transport robot 302a includes a hand that holds the substrate 100 and a multi-joint arm that moves the hand horizontally. In other words, the deposition block 301 is a cluster-type deposition unit (cluster-type deposition apparatus) in which multiple deposition chambers 303a to 303d are arranged to surround the transport robot 302a. In the following description, when the deposition chambers 303a to 303d are not specifically distinguished, they may be referred to as deposition chamber 303. In this embodiment, in the deposition chamber 303, the surface on which the film is to be deposited on the substrate 100 is facing downwards, and a deposition unit positioned below the substrate 100 performs deposition by depositing the deposition material upwards.

[0014] In the transport direction of the substrate 100 (arrow direction), a buffer chamber 306, a swirling chamber 307, and a transfer chamber 308 are located upstream and downstream of the film deposition block 301, respectively. During the manufacturing process, each chamber is maintained in a vacuum state. Although only one film deposition block 301 is shown in Figure 1, the film deposition apparatus 1 according to this embodiment has a plurality of film deposition blocks 301, and the plurality of film deposition blocks 301 are connected by a connecting device consisting of a buffer chamber 306, a swirling chamber 307, and a transfer chamber 308. The configuration of the connecting device is not limited to this, and for example, it may consist only of a buffer chamber 306 or a transfer chamber 308.

[0015] The transport robot 302a is responsible for transporting the substrate 100 from the upstream transfer chamber 308 to the transport chamber 302, transporting the substrate 100 between the film deposition chambers 303, transporting the mask between the mask storage chamber 305 and the film deposition chamber 303, and transporting the substrate 100 from the transport chamber 302 to the downstream buffer chamber 306.

[0016] The buffer chamber 306 is a chamber for temporarily storing substrates 100 depending on the operating status of the film deposition apparatus 1. The buffer chamber 306 is equipped with a multi-tiered substrate storage shelf (also called a cassette) capable of storing multiple substrates 100 while maintaining a horizontal state with the processing surface (film deposition surface) of the substrates 100 facing downward in the direction of gravity, and a lifting mechanism that raises and lowers the substrate storage shelf to align the stage for loading or unloading the substrates 100 with the transport position. As a result, multiple substrates 100 can be temporarily stored and retained in the buffer chamber 306.

[0017] The rotating chamber 307 is equipped with a device for changing the orientation of the substrate 100. In this embodiment, the rotating chamber 307 rotates the orientation of the substrate 100 by 180 degrees using a transport robot 307a provided in the rotating chamber 307. The transport robot 307a provided in the rotating chamber 307 rotates 180 degrees while supporting the substrate 100 received in the buffer chamber 306 and hands it over to the transfer chamber 308, thereby swapping the front and rear ends of the substrate 100 in the transport direction (arrow direction) between the buffer chamber 306 and the transfer chamber 308. As a result, the orientation of the substrate 100 when it is brought into the deposition chamber 303 is the same in each deposition block 301, so that the scanning direction and mask orientation for deposition on the substrate 100 can be matched in each deposition block 301. This configuration allows for the masks to be placed in the mask storage chamber 305 in the same orientation in each film deposition block 301, simplifying mask management and improving usability.

[0018] The transfer chamber 308 is a room for transferring the substrate 100, which has been brought in by the transfer robot 307a of the rotating chamber 307, to the transfer robot 302a of the downstream film deposition block 301. In this embodiment, as will be described later, the film thickness of the film deposited on the substrate 100 is measured in the transfer chamber 308. In other words, the transfer chamber 308 can be said to be an inspection room for inspecting the film formed on the substrate 100.

[0019] The control system of the film deposition apparatus 1 includes a host computer, a higher-level device 300, which controls the entire line, and control devices 309, 310, 311, 313a to 313d, which control each component. These control devices can communicate via a wired or wireless communication line 300a. The control devices 313a to 313d are provided corresponding to the film deposition chambers 303a to 303d and control the film deposition apparatus 1, which will be described later. Control device 309 controls the transport robot 302a. Control device 310 controls the transport robot provided in the turning chamber 307. Control device 311 controls the equipment that performs alignment and film thickness measurement in the transfer chamber 308. The higher-level device 300 transmits information about the substrate 100 and instructions such as transport timing to each control device 309, 310, 311, 313a to 313d, and each control device 309, 310, 311, 313a to 313d controls each component based on the received instructions.

[0020] <Inspection Apparatus> Figure 2 is a schematic diagram of an inspection apparatus 110 according to one embodiment of the present invention, and in particular is an inspection apparatus for forming a transfer chamber 308 downstream of a film deposition block 301. In each figure, including Figure 2, the X and Y directions are horizontal directions, and the Z direction is vertical direction. The inspection apparatus 110 includes a chamber 10, a suction unit 11, a moving unit 12, a suction assist unit 13, a positioning unit 14, a substrate support unit 15, and an inspection unit 16.

[0021] The chamber 10 has a box-like shape and forms a transfer chamber 308. The inside of the chamber 10 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, the chamber 10 is connected to a vacuum pump (not shown). In this specification, "vacuum" refers to a state filled with a gas at a pressure lower than atmospheric pressure, in other words, a reduced pressure state.

[0022] In this embodiment, the pre-filmed substrate 100 to be inspected is transported into the chamber 10 by a transport robot 307a in the rotating chamber 307 through an entrance (not shown) formed in the chamber 10. The inspected substrate 100 is then transported out of the chamber 10 through an exit (not shown) formed in the chamber 10 by a transport robot (not shown) downstream of the transfer chamber 308.

[0023] In this embodiment, the inspection unit 16 performs an inspection that measures the film thickness of the film deposited on the substrate 100. The measurement results are used to control the film deposition apparatus in the film deposition chamber 303, thereby improving the quality of the deposited film.

[0024] Figure 3 is an explanatory diagram of film thickness measurement. In the illustrated example, a film 101 such as an organic EL is deposited on the lower surface of a substrate 100, and the film 101 is deposited in a film deposition area which is a manufacturing area for electronic devices. An inspection film 103 for film thickness measurement is deposited in an inspection area 102 adjacent to the film deposition area of ​​the film 101. The inspection area 102 is set at a predetermined position (in this embodiment, the edge of the substrate 100). In this embodiment, the inspection area 102 is distinguished from the film deposition area (manufacturing area), but the inspection area 102 may be part of the film deposition area. Film thickness measurement is performed by moving the measuring head 161 of the inspection unit 16 along the lower surface of the substrate 100 and reading the inspection film 103 with the measuring head 161. Also, in the example of Figure 1, three inspection films 103 are shown to be deposited in the inspection area 102, but it is sufficient and not limited to the generation of one or more inspection films. Furthermore, in the inspection area 102, no layer with a higher reflectivity than the inspection film 103 to be measured is formed. For example, if a metal layer with a higher reflectivity than the inspection film 103 is formed as the underlying reflective layer, the intensity of light reflection at the interface between the thin film and the underlying layer may change depending on the state of the interface between the thin film and the underlying layer, as well as the thickness and quality of the underlying layer, making it impossible to accurately measure the film thickness. Therefore, by not placing the underlying reflective layer in the inspection area 102, it is possible to prevent a decrease in the accuracy of film thickness measurement.

[0025] In this embodiment, the measuring head 161 optically measures the thickness of the inspection film 103. The measuring head 161 includes a light source that irradiates light onto the substrate 100 and a light receiving unit that receives reflected light from the substrate 100. The light received by the light receiving unit is spectrally analyzed, and the light intensity for each wavelength band is calculated. The thickness can be calculated by fitting the measured light intensity for each wavelength to an analysis model. Note that the method of measuring the thickness is not limited to this example, and the inspection content by the inspection unit 16 may be properties of the film other than thickness. In one example, white light in the ultraviolet to near-infrared region (200 to 800 nm) is transmitted from the light source and used for measurement.

[0026] The suction unit 11 will be described with reference to Figures 4 and 5. Figure 4 is a perspective view of the suction unit 11. Figure 5 is a diagram showing the suction surface of the suction unit 11. The suction unit 11 in this embodiment is a unit that attracts the substrate 100 by electrostatic force. However, the attraction method is not limited to this, and for example, a method that uses negative pressure for attraction or a method that uses adhesive force for attraction may also be used.

[0027] The suction unit 11 includes a frame 111 and a suction plate (electrode placement section) 112. The frame 111 is a rectangular member that forms the outer shape of the suction unit 11. For example, the frame 111 forms a frame that is equal to or larger than the size of the substrate 100 to be adsorbed by the suction unit 11. Components of the moving unit 12 and the positioning unit 14, which will be described later, are provided on the side surface of the frame 111.

[0028] The suction plate 112 is an electrostatic chuck that attracts the substrate 100 by electrostatic force. For example, the suction plate 112 has a structure in which an electrical circuit such as a metal electrode is embedded inside a matrix (also called a base) made of ceramic material. Multiple electrodes 115a to 115l (collectively referred to as electrodes 115) that generate electrostatic force are arranged on the lower surface 112a of the suction plate 112, and these each constitute an adsorption part. The lower surface 112a forms a horizontal adsorption surface that attracts the substrate 100. When positive (+) and negative (-) voltages are applied to the electrodes 115, polarization charges are induced in the substrate 100 through the ceramic matrix, and the substrate 100 is attracted to and held by the electrostatic force between the substrate 100 and the suction plate 112. In this embodiment, multiple electrodes 115a to 115l are arranged in a matrix, and the application of voltage can be controlled individually.

[0029] On the lower surface 112a, an opening 1121 is positioned in a portion 114 corresponding to the inspection area 102 (see Figure 3). When the substrate 100 is adsorbed, the opening 1121 overlaps with the inspection area 102 (see Figure 3).

[0030] The suction plate 112 is also provided with a plurality of sensors 113 for detecting the adsorption and release of the substrate 100 from the lower surface 112a. The sensors 113 are, for example, touch sensors that detect contact with the substrate 100. In this embodiment, the plurality of sensors 113 are arranged in the Y direction at the center of the lower surface 112a in the X direction. However, the arrangement of the sensors 113 is not limited to this, and they may be at the periphery of the lower surface 112a. Furthermore, the detection of the adsorption and release of the substrate 100 may be, for example, by a capacitance sensor using electrodes 115, a camera that photographs the position of the substrate 100 and the suction plate 112, or a laser displacement meter that detects the position of the substrate 100.

[0031] Refer to Figures 2 and 4. The moving unit 12 is a mechanism for moving the suction unit 11. In this embodiment, the moving unit 12 is a lifting unit that moves the suction unit 11 up and down in the vertical direction. The moving unit 12 includes a movable part 121, a fixed part 122, and a drive part 123.

[0032] The movable part 121 supports the suction unit 11 and is provided to be movable together with the suction unit 11. The movable part 121 includes a lifting member 1211, a plurality of connecting members 1212, and a plurality of lifting shafts 1214. The lifting shafts 1214 are shaft members that extend in the Z direction so as to be suspended from the lifting member 1211, and only their lower ends are shown in Figure 4. The connecting members 1212 are members that are connected to the suction unit 11. The lifting shafts 1214 and the connecting members 1212 are connected via a joint 1213 equipped with a spherical bearing, and the connecting members 1212 are pivotable relative to the lifting shafts 1214.

[0033] The fixed part 122 is fixed to the upper wall 10a of the chamber 10. The drive unit 123 includes a drive source that generates a driving force to move the movable part 121, and a mechanism that converts the driving force of the drive source into translational motion. For example, the rotational driving force of an electric motor is converted into translational motion by a ball screw mechanism and transmitted to the movable part 121, causing the movable part 121 to move up and down. This causes the suction unit 11 to move up and down.

[0034] The suction assist unit 13 corrects the substrate 100 during suction by the suction unit 11, reducing the curvature of the substrate 100 so that it is adsorbed in a flatter position. The substrate 100 is supported at its periphery by the substrate support unit 15. As a result, the central part curves downward. The suction assist unit 13 corrects this curvature by pressing the periphery of the substrate 100 downward.

[0035] The suction assist unit 13 of this embodiment includes a shaft-shaped pressing part 131 that presses against the substrate 100, and a lifting part 132 that raises and lowers the pressing part 131. The lifting part 132 can appropriately employ known technologies such as an electric motor and a ball screw mechanism.

[0036] In this embodiment, the suction assist unit 13 presses the substrate 100, which is supported by the substrate support unit 15, so that it partially separates from the suction unit 11. Specifically, the pressing portion 131 presses the substrate 100 from above through the through hole 1112 formed in the frame 111 of the suction unit 11. In this embodiment, the suction assist unit 13 also corrects the substrate 100 to a more horizontal position by pressing the four corners of the substrate 100 from above with the four pressing portions 131. As another form of the suction unit 11, it may press the central part of the substrate 100 from below upward.

[0037] The positioning unit 14 is a unit that positions the suction unit 11. Specifically, the positioning unit 14 positions the suction unit 11 to the position where inspection will be performed by the inspection unit 16. The positioning unit 14 includes a stopper portion 141 and a receiving portion 142.

[0038] The abutment portion 141 is provided on the side surface of the frame 111 of the suction unit 11. That is, the abutment portion 141 moves together with the suction unit 11 by the moving unit 12. In this embodiment, the abutment portion 141 is formed such that the portion that abuts against the receiving portion 142 is spherical.

[0039] The receiving portion 142 is fixed within the chamber 10 at a position corresponding to the abutment portion 141, and receives the abutment portion 141. Here, the receiving portion 142 is shown as a conical recess opening upward. The position of the suction unit 11 is defined by the spherical portion of the receiving portion 142 fitting into the recess of the receiving portion 142. In this embodiment, six abutment portions 141 are provided on the side surface of the frame 111 of the suction unit 11, and six receiving portions 142 are provided at corresponding positions. However, the number of abutment portions 141 and receiving portions 142 can be changed. Also, not all of the receiving portions 142 have to be conical recesses as shown. For example, multiple receiving portions 142 may include V-shaped grooves and flat surfaces. Furthermore, a so-called kinematic mount may be formed by the abutment portions 141 and receiving portions 142.

[0040] The substrate support unit 15 is a unit that supports the substrate 100. The substrate 100 to be inspected, which is brought into the inspection device 110, is supported by the substrate support unit 15, and the inspected substrate 100 is discharged from the substrate support unit 15 to the outside. The substrate support unit 15 supports the substrate 100 from below. The substrate support unit 15 is located in the chamber 10 between the suction unit 11 and the inspection unit 16 in the vertical direction. In this embodiment, the substrate support unit 15 includes a frame 151 and a plurality of support members 152.

[0041] The frame 151 forms the outer shape of the substrate support unit 15 and is supported by the base member via a support column member. The base member is fixed inside the chamber 10. The frame 151 has a rectangular frame shape, and the substrate 100 is supported inside the frame formed by the frame 151.

[0042] The support member 152 is the part of the substrate support unit 15 that directly supports the substrate 100, and is formed, for example, by a leaf spring. In this embodiment, a plurality of support members 152 are supported on the frame 151 so as to extend inward into the frame formed by the frame 151, and the peripheral edge of the substrate 100 is placed on the plurality of support members 152. Because the support members 152 are elastic, the load acting on the substrate 100 when the substrate 100 supported by the plurality of support members 152 comes into contact with the suction unit 11 can be relieved by the elastic deformation of the support members 152.

[0043] The inspection unit 16 comprises a measuring head 161, a slider 162, and a guide rail 163. The guide rail 163 extends in the Y direction on a base member 164. The slider 162 is reciprocable in the Y direction guided by the guide rail 163. The mechanism for moving the slider 162 can be, for example, a ball screw mechanism driven by a motor or a linear motor. The measuring head 161 is mounted on the slider 162 and reciprocates in the Y direction together with the slider 162.

[0044] Refer to FIG. 2. The control device 311 controls the inspection device 110. The control device 311 includes a processing unit 311a, a storage unit 311b, an input / output interface (I / O) 311c, and a communication unit 311d. The processing unit 311a is a processor represented by a CPU, and controls the film forming apparatus 1 by executing a program stored in the storage unit 311b. The storage unit 311b is a storage device such as a ROM, a RAM, or an HDD, and stores various control information in addition to the program executed by the processing unit 311a. The I / O 311c is an interface that transmits and receives signals between the processing unit 311a and an external device. The external devices include actuators and sensors included in the inspection device 110. The communication unit 311d is a communication device that communicates with a host device or another control device via a communication line.

[0045] FIG. 6 is a diagram showing a configuration example of the inspection unit 16. The inspection unit 16 includes a light source 601, a vacuum flange 602, a light transmitting / receiving unit 603, a spectroscope 604, and a PC 605. The light source 601, the vacuum flange 602, the light transmitting / receiving unit 603, and the spectroscope 604 are connected by an optical fiber 611.

[0046] The light source 601 is a light emitting device that can switch the output and non-output of light by operating a shutter 6011. In one example, the light source 601 includes a deuterium (D2) halogen light source 6012 that emits continuous light of halogen and deuterium from one emission port. In another example, the light source 601 includes a laser-excited plasma (Laser-Driven Light Source) light source.

[0047] The vacuum flange 602 is disposed at the connection between the vacuum environment and the atmospheric environment. For example, the light source 601, the spectroscope 604, and the PC 605 are disposed outside the chamber 10 maintained in the atmospheric environment, the light transmitting / receiving unit 603 is disposed in the measurement head 161 in the chamber 10 that can be placed in a vacuum state, and the optical fiber connecting the light transmitting / receiving unit 603 to the light source 601 and the spectroscope 604 connects the inside and outside of the chamber 10 via the vacuum flange. In another example, a housing maintained in the atmospheric environment may be provided inside the chamber 10, and the light source 601, the spectroscope 604, and the PC 605 may be disposed inside this housing.

[0048] The light projecting and receiving unit 603 includes a light projecting unit for projecting the light emitted from the light source 601 vertically upward, and a light receiving unit for receiving the reflected light and sending it to the spectroscope 604. Further, the light projecting and receiving unit 603 includes an aperture and a diaphragm. The amount and angle of the light incident or emitted in the light projecting and receiving unit 603 are limited by the aperture and the diaphragm. Thereby, for example, it is possible to suppress the light reflected from a portion different from the measurement region on the substrate 100 from entering the spectroscope 604 as noise.

[0049] The spectroscope 604 has an input port for light, splits the input light, and measures the light intensity for each wavelength band. Then, information regarding the measured light intensity is transmitted to the PC 605.

[0050] The PC 605 calculates a measured value of the film thickness based on the light intensity measured by the spectroscope 604. Known techniques can be used for the calculation of the measured value of the film thickness. For example, the relationship between the thickness of the film formed on the substrate 100 and the reflectance of the substrate 100 at a certain wavelength (nm) may be measured and obtained in advance, and the film thickness may be calculated from this relationship and the measured reflectance.

[0051] FIG. 7 shows an example of the measurement results of the reflectance for each formed film thickness. As shown in FIG. 7, compared with the reflectance of the substrate in the case of a film thickness of 40 angstroms (Å), in the case of a film thickness of 1600 Å, the reflectance around wavelengths of 280 and 330 to 420 nm is increased. Therefore, the film thickness can be estimated by measuring the reflectance in this wavelength band. Further, for the estimation of the film thickness based on the measurement results of the reflectance, the film thickness may be estimated based on the reflectances measured in a plurality of frequency bands. For example, when the estimation results of the film thickness based on the measurement results of the reflectance at wavelengths of 280 nm and 330 nm are 400 Å and 600 Å, respectively, the average of the estimation results of the film thickness may be taken, and the film thickness may be assumed to be 500 Å. In one embodiment, the measurement unit 29 may be capable of measuring a thin film of about 100 to 1000 Å.

[0052] Figure 8 shows a cross-sectional view of the substrate and holding unit in the YZ plane passing through the inspection area 102. Light irradiated from the measuring head 161 at intensity Pt1 is reflected by the inspection film 103, and the reflected light is received by the measuring head 161 at intensity Pr1. This allows for the estimation of the film thickness as shown in Figure 7. In one example, the distance from the substrate 100 to the measuring head 161 is in the range of 5 to 10 mm.

[0053] Here, light with intensity Pt2 that has passed through the inspection film 103 is reflected by the substrate 100 and the surface of portion 114 of the adsorption unit 11, potentially generating reflected light with intensity Pr2. Since the intensity of the reflected light can also change depending on whether or not there is a gap between the substrate 100 and the adsorption plate 112, the accuracy of the film thickness measurement could decrease depending on the state of portion 114 facing the substrate surface on the opposite side of the inspection area 102 to which the light for film thickness measurement is irradiated.

[0054] As shown in Figures 5 and 9, the inspection apparatus according to this embodiment has an opening 1121 positioned to enclose the portion 114. The opening 1121 is a through-hole in which a cavity is positioned so as to penetrate the suction plate 112 in the direction of irradiation of the irradiated light, that is, so as not to exist in the direction of irradiation of the irradiated light. This prevents the light irradiated from the measuring head 161 from being reflected by the suction plate 112.

[0055] Furthermore, the suction plate 112 should hold the substrate 100 in such a way that the suction plate 112 and the part 114 do not overlap in the direction of the irradiation of the light emitted from the measuring head 161, so that the light emitted from the measuring head 161 is not reflected by the suction plate 112. The shape of the opening is not limited to this.

[0056] Figures 10A and 10B show modified examples of the suction plate 112. In Figure 10A, the substrate 100 extends outward from the suction plate 112 in the Y-axis direction, and a portion of the extended substrate 100 faces the frame 1001 connected to the suction plate 112. In other words, a portion of the substrate 100 extends outward from the suction surface of the suction plate 112. The frame 1001 is provided so as to face the substrate that extends outward from the suction surface of the suction plate 112.

[0057] The frame 1001 forms an opening either by itself or by the frame 1001 and the suction plate 112, and the formed opening is adsorbed by the suction plate 112 so that it overlaps with the inspection area 102 in the direction of the irradiation light. This prevents the light irradiated from the measuring head 161 from being reflected by the suction plate and the frame 1001. In one example, the frame 1001 is an aluminum frame.

[0058] In Figure 10B, the substrate 100 is extended outward from the suction plate 112 in the Y-axis direction, and the suction plate 112 holds the substrate 100 so that a portion of the extended substrate 100 faces the inspection area 102 in the direction of light irradiation from the measuring head 161. In one example, the suction plate 112 holds the substrate 100 so that the length of the substrate 100 extending from the suction plate 112 is 100 mm or less, for example, 80 mm, thereby enabling the substrate 100 to be extended outward from the suction surface of the suction plate 112 without bending.

[0059] In Figure 11A, the electrodes 115 are positioned so as to sandwich the opening 1121 in either direction of the adsorption surface. This allows for strong adsorption of the edges of the substrate 100.

[0060] Furthermore, as shown in Figure 11B, the electrodes 115 are arranged such that the opening 1121 is surrounded in one direction of the adsorption surface. This prevents a decrease in the adsorption force of the substrate 100 on which the opening 1121 is located.

[0061] As described above, the inspection apparatus according to this embodiment includes a suction plate 112 for holding the substrate during film thickness measurement, and the suction plate 112 holds the substrate so as not to overlap with the substrate in the direction of irradiation of the light used for film thickness measurement. This prevents the light used for film thickness measurement from being reflected by the suction plate 112, thereby improving the convenience of film thickness measurement.

[0062] <Inspection Method> The inspection method for measuring film thickness will be explained with reference to Figure 12. The process shown in Figure 12 is performed when the substrate 100, which has been removed from the deposition chamber 303 after film deposition on the substrate in the deposition chamber 303, is brought into the transfer chamber 308.

[0063] In S1, it is determined whether or not the substrate 100 has been loaded into the inspection device 110. The loading of the substrate 100 can be determined by notification from other devices, such as a higher-level device 300 or a control device 310.

[0064] In step S2, the suction assist unit 13 corrects the deflection of the substrate 100. The pressing unit 131 presses the four corners of the substrate 100 from above to correct the substrate 100 to a more horizontal position.

[0065] In S3, a voltage is applied to the electrode 115 of the adsorption unit 11. An adsorption force is generated on the adsorption surface 112a due to electrostatic force.

[0066] In S4, the moving unit 12 lowers the suction unit 11 to the measurement position. As a result, the substrate 100 is attracted to the suction unit 11. The positioning unit 14 also positions the suction unit 11. The suction unit 11 is lowered by the moving unit 12 to the measurement position for film thickness measurement, and this movement by the moving unit 12 presses the suction unit 11 against the substrate 100 supported by the substrate support unit 15. The abutment portion 141 fits into the receiving portion 142, defining the position of the suction unit 11. At this time, the joint 1213 equipped with a spherical bearing allows the suction unit 11 to be slightly displaced and is positioned by the positioning unit 14.

[0067] Then, the suction unit 11 attracts the substrate 100 by electrostatic force while the substrate 100 is pressed against the suction unit 11. In particular, at this stage, the same voltage is applied to all electrodes 115a to 115l, and a uniform suction force is generated on the suction surface 112a. As a result, the suction area on which the suction plate 112 of the suction unit 11 is provided and the substrate 100 are in contact without any gaps, and the bending of the substrate 100 due to its own weight is eliminated.

[0068] In S5, the detection result from the sensor 113 is obtained to determine whether or not the substrate 100 has been successfully adsorbed. If the sensor 113 detects contact with the substrate 100, it is determined that the substrate 100 has been successfully adsorbed, and the process in S6 is executed.

[0069] In S6, the substrate 100 is inspected. Here, the film thickness of the inspection film 103 (Figure 3) in the inspection area 102 is measured.

[0070] In S7, the voltage applied to the electrode 115 of the adsorption unit 11 is stopped (0V). The adsorption force of the adsorption surface 112a disappears, and the substrate 100 peels off from the adsorption surface 112a.

[0071] In S8, the detection result from the sensor 113 is obtained to determine whether or not the detachment of the substrate 100 is complete. If the sensor 113 does not detect contact with the substrate 100, it is determined that the detachment of the substrate 100 is complete and the process in S9 is executed. In S9, the moving unit 12 raises the suction unit 11 to the retracted position. The substrate 100 is placed on the substrate support unit 15, and the suction unit 11 is separated from the substrate 100.

[0072] In S10, a command to discharge the substrate 100 is sent to the higher-level device 300, etc. In response, the inspected substrate 100 is discharged from the inspection device 110 by a transport robot (not shown) located downstream of the inspection device 110. This completes one inspection process.

[0073] <Method of Manufacturing Electronic Devices> Next, an example of a method of manufacturing electronic devices will be described. The configuration and manufacturing method of an organic EL display device will be used as an example of an electronic device. In this example, the film deposition block 301 shown in Figure 1 is provided in, for example, three locations on the manufacturing line.

[0074] First, let me explain the organic EL display device that we manufacture. Figure 13A is an overall view of the organic EL display device 50, and Figure 13B is a diagram showing the cross-sectional structure of one pixel.

[0075] As shown in Figure 13A, the display area 51 of the organic EL display device 50 has multiple pixels 52, each having multiple light-emitting elements, arranged in a matrix. As will be explained in detail later, each light-emitting element has a structure comprising an organic layer sandwiched between a pair of electrodes.

[0076] In this context, a pixel refers to the smallest unit that enables the display of a desired color in the display area 51. In the case of a color organic EL display device, a pixel 52 is composed of a combination of multiple subpixels of a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B, which emit different amounts of light from each other. A pixel 52 is often composed of a combination of three types of subpixels: a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but is not limited to this. A pixel 52 may include at least one type of subpixel, preferably two or more types, and more preferably three or more types. As for the subpixels that make up a pixel 52, for example, it may be a combination of four types of subpixels: a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element.

[0077] Figure 13B is a schematic cross-sectional view of a portion of Figure 13A along line A-B. The pixel 52 has multiple subpixels on the substrate 100, each composed of an organic EL element comprising a first electrode (anode) 54, a hole transport layer 55, one of a red layer 56R, a green layer 56G, or a blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58. Of these, the hole transport layer 55, red layer 56R, green layer 56G, blue layer 56B, and electron transport layer 57 are organic layers. The red layer 56R, green layer 56G, and blue layer 56B are formed in patterns corresponding to light-emitting elements (sometimes described as organic EL elements) that emit red, green, and blue light, respectively.

[0078] Furthermore, the first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common across multiple light-emitting elements 52R, 52G, and 52B, or they may be formed for each light-emitting element. That is, as shown in Figure 13B, the hole transport layer 55 may be formed as a common layer across multiple sub-pixel regions, on which the red layer 56R, green layer 56G, and blue layer 56B may be formed separately for each sub-pixel region, and on top of that, the electron transport layer 57 and the second electrode 58 may be formed as a common layer across multiple sub-pixel regions.

[0079] Furthermore, an insulating layer 59 is provided between the first electrodes 54 to prevent short circuits between the adjacent first electrodes 54. In addition, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 60 is provided to protect the organic EL element from moisture and oxygen.

[0080] In Figure 13B, the hole transport layer 55 and the electron transport layer 57 are shown as a single layer, but depending on the structure of the organic EL display element, they may be formed as multiple layers having hole blocking layers and electron blocking layers. Furthermore, a hole injection layer having an energy band structure that allows for smooth injection of holes from the first electrode 54 to the hole transport layer 55 may be formed between the first electrode 54 and the hole transport layer 55. Similarly, an electron injection layer may be formed between the second electrode 58 and the electron transport layer 57.

[0081] Each of the red layer 56R, green layer 56G, and blue layer 56B may be formed as a single light-emitting layer or by stacking multiple layers. For example, the red layer 56R may consist of two layers, with the upper layer being a red light-emitting layer and the lower layer being a hole transport layer or an electron blocking layer. Alternatively, the lower layer may be a red light-emitting layer and the upper layer being an electron transport layer or a hole blocking layer. By providing layers below or above the light-emitting layer in this way, the light-emitting position in the light-emitting layer can be adjusted, and the optical path length can be adjusted, thereby improving the color purity of the light-emitting element.

[0082] Although the example shown here is for the red layer 56R, a similar structure may be used for the green layer 56G or the blue layer 56B. Furthermore, the number of layers may be two or more. Additionally, layers of different materials, such as the light-emitting layer and the electron-blocking layer, may be laminated, or layers of the same material may be laminated, for example, by laminating two or more light-emitting layers.

[0083] Next, we will specifically describe an example of a method for manufacturing an organic EL display device. Here, we assume that the red layer 56R consists of two layers, a lower layer 56R1 and an upper layer 56R2, and that the green layer 56G and the blue layer 56B consist of a single light-emitting layer.

[0084] First, a substrate 100 is prepared on which a circuit (not shown) for driving an organic EL display device and a first electrode 54 are formed. The material of the substrate 100 is not particularly limited and can be made of glass, plastic, metal, etc. In this embodiment, a substrate 100 is used in which a polyimide film is laminated on a glass substrate.

[0085] A resin layer, such as acrylic or polyimide, is coated onto the substrate 100 on which the first electrode 54 is formed by bar coating or spin coating. The resin layer is then patterned by lithography to form an insulating layer 59 in the area where the first electrode 54 is formed. This opening corresponds to the light-emitting region where the light-emitting element actually emits light. In this embodiment, the processing is performed on a large substrate until the insulating layer 59 is formed, and after the insulating layer 59 is formed, a division process is performed to divide the substrate 100.

[0086] A substrate 100 with an insulating layer 59 patterned on it is brought into the first deposition chamber 303, and a hole transport layer 55 is deposited as a common layer on the first electrode 54 of the display area. The hole transport layer 55 is deposited using a mask in which an opening is formed for each display area 51 that will ultimately become the panel portion of each organic EL display device.

[0087] Next, the substrate 100, on which the hole transport layer 55 has been formed, is brought into the second deposition chamber 303. The substrate 100 is aligned with the mask, the substrate is placed on the mask, and the red layer 56R is deposited on the portion of the substrate 100 where the red-emitting elements are placed (the region where the red subpixels are formed) above the hole transport layer 55. Here, the mask used in the second deposition chamber is a high-resolution mask in which openings are formed only in the multiple regions on the substrate 100 that will become the subpixels of the organic EL display device, specifically in the regions that will become the red subpixels. As a result, the red layer 56R, including the red light-emitting layer, is deposited only in the regions that will become the red subpixels among the multiple regions that will become the subpixels on the substrate 100. In other words, the red layer 56R is not deposited in the regions that will become the blue subpixels or the green subpixels among the multiple regions that will become the subpixels on the substrate 100, but is selectively deposited in the regions that will become the red subpixels.

[0088] Similar to the deposition of the red layer 56R, the green layer 56G is deposited in the third deposition chamber 303, and then the blue layer 56B is deposited in the fourth deposition chamber 303. After the deposition of the red layer 56R, the green layer 56G, and the blue layer 56B is completed, the electron transport layer 57 is deposited over the entire display area 51 in the fifth deposition chamber 303. The electron transport layer 57 is formed as a common layer for the three color layers 56R, 56G, and 56B.

[0089] The substrate with the electron transport layer 57 formed on it is moved to the sixth deposition chamber 303, where the second electrode 58 is deposited. In this embodiment, each layer is deposited by vacuum deposition in the first to sixth deposition chambers 303. However, the present invention is not limited thereto, and for example, the second electrode 58 in the sixth deposition chamber 303 may be deposited by sputtering. After that, the substrate with the second electrode 58 formed on it is moved to a sealing device, where a protective layer 60 is deposited by plasma CVD (sealing step), and the organic EL display device 50 is completed. Here, the protective layer 60 is formed by the CVD method, but it is not limited thereto, and may be formed by the ALD method or the inkjet method.

[0090] In the first to sixth deposition chambers 303, film deposition is carried out using a mask with openings corresponding to the pattern of each layer to be formed. During film deposition, the relative positions of the substrate 100 and the mask are adjusted (aligned), and then the substrate 100 is placed on the mask to perform film deposition. The alignment process carried out in each deposition chamber is performed in accordance with the alignment process described above.

[0091] <<Second Embodiment>> In this embodiment, a modified example of the suction plate 112 will be described. Hereinafter, the same reference numerals will be used for the same configuration, function, and processing as in the first embodiment, and their descriptions will be omitted.

[0092] At the ends of the suction plate 112, stress may be applied due to pressure during processing or pressure applied by the frame 111 or support member 152. In such cases, stress may concentrate at the opening 1121, causing cracks to occur.

[0093] Figure 14 is a perspective view illustrating the structure of the suction plate 112 according to this embodiment. The suction plate 112 according to this embodiment comprises a through hole 1400 and a stress distribution portion 1401 disposed at the end of the through hole 1400 for distributing the stress applied to the through hole 1400. The through hole 1400 is a slit-shaped through hole corresponding to the opening 1121 and positioned perpendicular to the portion 114 on which the inspection film 103 is placed. In the example of Figure 14, the stress distribution portion 1401 is a cylindrical through hole having a diameter larger than the width of the slit in the through hole 1400, and is positioned on a plane parallel to the suction surface of the substrate 100, partially overlapping with the opening.

[0094] Here, the normal stress σ can be expressed as σ = F / A, where F is the vertical load and A is the area over which the force acts. In other words, the stress can be reduced by increasing the area A over which the vertical force acts. For this reason, the stress distribution section 1401 in this example has a structure that has a larger cross-sectional area compared to the opening 1121, thereby reducing the normal stress. In the example shown in Figure 14, the stress distribution section 1401 is shown as being located only at one end of the through hole 1400, but the stress distribution section 1401 may be located at both ends of the through hole 1400.

[0095] Figures 15A to 15D show the processing steps for the suction plate 112. Figure 15A shows a top view of the suction plate 112 in the first step of forming one side of the suction plate 112. In the first step of the molding process for the suction plate 112, recesses 1501 and 1502 are formed by cutting the position corresponding to the stress distribution portion 1401 and the end position of the through hole 1400 on one side of the suction plate 112 without penetrating it. Note that in the first step, the cutting is done without penetrating the suction plate 112.

[0096] Figure 15B shows a top view of the suction plate 112 in the second step, where one side of the suction plate 112 is being formed. In the second step, one side of the suction plate 112 is cut so as to connect the stress distribution portion 1401 and the end of the through hole 1400, as indicated by the slit 1511. Figure 15C shows a cross-sectional view of the suction plate 112 in the XY plane along line A-B in Figure 15B. As shown in Figure 15C, in the second step as well, the suction plate 112 is cut so as not to penetrate the suction plate 112. The depths of the recesses 1501 and 1502, and the slit 1511, do not have to be the same, as shown in Figure 15C.

[0097] Figure 15D shows a top view of the suction plate 112 in the third step. In the third step, cutting is performed in the same manner as in the first and second steps, so as to penetrate the suction plate 112. In the third step, cutting may be performed from the opposite side of the suction plate 112 to the side processed in the first step, or cutting may be performed so as to penetrate from the side of the suction plate 112 that was processed in the first step.

[0098] In this way, by forming stress-distributing sections and through holes in stages, it is possible to prevent the occurrence of stress-concentrating areas and thus prevent crack formation during processing.

[0099] The shape of the stress distribution section 1401 is not limited to the shape shown in Figure 14. Figures 16A to 16B show modified examples of the stress distribution section.

[0100] The stress distribution section 1602 shown in Figure 16A comprises a plurality of slit-shaped through holes arranged in the XY plane at positions that do not overlap with the through holes 1601. The through holes 1601 correspond to the opening 1121 and are slit-shaped through holes arranged at a position that overlaps perpendicularly with the area 114 where the inspection film 103 is placed. In the example of Figure 16A, the stress distribution section 1602 is shown as being arranged only on one side in the width direction of the slit of the through hole 1601, but the stress distribution section 1602 may be arranged on both sides in the width direction. Also, although the stress distribution section 1602 in Figure 16A has been described as being a through hole, it may also be a recess. In other words, the stress distribution section 1602 may be an opening, and its shape is not limited to the example in Figure 16A.

[0101] The stress distribution section 1612 shown in Figure 16B has a recess that surrounds the through hole 1611 in the XY plane, that is, has a larger area in the XY plane than the through hole 1611, and does not penetrate the suction plate 112. The through hole 1611 corresponds to the opening 1121 and is a through hole with a slit shape that is positioned perpendicular to the area 114 where the inspection film 103 is placed. In the example of Figure 16B, the stress distribution section 1612 has a slit shape with a width greater than the width of the slit in the through hole 1611, and cylindrical shapes with a diameter greater than the width of the slit, positioned at both ends of the slit shape. However, the stress distribution section 1612 only needs to have a shape that surrounds both ends of the through hole 1611, and its shape is not limited to this.

[0102] In the example shown in Figure 16B, the stress distribution section 1612 can be positioned on the side of the suction plate 112 opposite to the suction surface. This allows the stress distribution section to be positioned without reducing the area available for placing electrodes on the suction surface of the suction plate 112.

[0103] In this way, by placing a stress-distributing structure at the point where stress is concentrated at the end of the through hole, the stress can be distributed. Furthermore, by arranging the stress-distributing structure without widening the width of the through holes 1400, 1601, and 1611, the strength of the end of the through hole can be improved without reducing the area on which the electrodes of the suction plate 112 can be placed.

[0104] <<Third Embodiment>> In this embodiment, a modified example of the suction plate 112 will be described. Hereinafter, the same reference numerals will be used for the same configuration, function, and processing as in the first embodiment, and their descriptions will be omitted.

[0105] In order to provide a larger area for forming films for product manufacturing, the inspection area is often located at the edge of the substrate. On the other hand, electrodes cannot be placed in the portion of the suction plate 112 where the opening 1121 shown in Figure 5 is located. In addition, interference between the support member 152 shown in Figure 2 and the opening 1121 may cause cracks to occur in the opening 1121.

[0106] In this embodiment, the suction plate 112 is positioned such that the opening 1121 does not overlap vertically with the position supported by the support member 152. Figures 17A and 17B show a plan view of the suction plate 112 according to this embodiment, viewed from below and vertically upward. In Figures 17A and 17B, the substrate 100 is assumed to be adsorbed by the suction plate 112 and held down by the support member 152. The substrate 100 is shown as transparent in order to clearly show the positional relationship between the suction plate 112 and the substrate 100.

[0107] Multiple openings 1701 corresponding to the opening 1121 in Figure 9 are arranged on the suction plate 112 of the suction unit 11. Here, a predetermined region surrounding the opening 1701 in the XY plane is a non-electrode region 1702 where electrodes are not placed. In this embodiment, the region between the multiple openings 1701 of the suction plate 112 is an electrode region where electrodes are placed. This ensures sufficient suction force at the edges of the substrate 100. Therefore, the openings 1701 corresponding to the position where the inspection area is placed can be positioned at the edges of the substrate.

[0108] Furthermore, the opening 1701 of the suction plate 112 in this example is not positioned where the substrate 100 is held down by the support member 152. That is, the support member 152 supports the substrate 100 so as not to overlap with the opening 1701 in the perpendicular direction. This makes it possible to improve the strength of the area where pressure is applied by the support member 152.

[0109] Furthermore, since the region 1703 between the openings 1701 functions as an electrode region, as shown in Figure 17B, the suction force of the suction plate 112 at the substrate edge can be ensured even when the edge of the substrate 100 in the X direction is short.

[0110] <Modification> In this embodiment, the inspection area 102 is shown as being provided separately from the film 101 for product manufacturing, but the film thickness measurement inspection may be performed using the film 101. In this case, the suction plate 112 should hold the substrate 100 so that it does not overlap with the substrate 100 in the direction of the light irradiation from the measuring head 161 to the position where the film thickness measurement inspection of the film 101 is performed.

[0111] Furthermore, multiple inspection areas 102 may be arranged on a single substrate 100. For example, they may be arranged near both ends of the substrate 100 in the X direction, or an inspection area 102 may be arranged in the center of the substrate 100. In this case, in each inspection area 102, the substrate 100 is adsorbed such that the substrate 100 and the adsorption plate 112 do not overlap in the direction of irradiation of the illumination light.

[0112] The invention is not limited to the embodiments described above, and various modifications and changes are possible within the scope of the gist of the invention.

[0113] This application claims priority based on Japanese Patent Application No. 2024-211643, filed on 4 December 2024, and Japanese Patent Application No. 2025-101477, filed on 17 June 2025, and all of the contents of those applications are incorporated herein by reference.

Claims

1. An inspection apparatus comprising: a measuring means for optically measuring the film thickness of a film deposited on a substrate by irradiating it with light; and an electrostatic chuck for adsorbing the substrate by electrostatic force when the measuring means is used for measurement, wherein the electrostatic chuck adsorbs the substrate such that a predetermined range located in the direction of irradiation of the light irradiated by the measuring means does not overlap with the substrate when the measuring means is used for measurement.

2. The inspection apparatus according to claim 1, wherein the electrostatic chuck has an opening, and the electrostatic chuck holds the substrate such that, when measurement is performed by the measuring means, the opening overlaps with the predetermined range located in the direction of irradiation of light irradiated from the measuring means.

3. The inspection apparatus according to claim 2, characterized in that a stress distribution section for distributing stress is arranged at the end of the opening.

4. The inspection apparatus according to claim 3, characterized in that the opening has a slit shape, and the stress distribution portion is a cylindrical through-hole having a diameter larger than the slit width of the opening.

5. The inspection apparatus according to claim 3, characterized in that the stress distribution portion is an opening positioned on a plane parallel to the substrate adsorption surface of the electrostatic chuck and not overlapping with the opening.

6. The inspection apparatus according to claim 3, characterized in that the stress distribution portion is formed on the surface opposite to the substrate adsorption surface of the electrostatic chuck and is a recess having a larger area than the opening on a surface parallel to the substrate adsorption surface.

7. The inspection apparatus according to any one of claims 1 to 6, wherein the electrostatic chuck has a plurality of openings, and the electrostatic chuck holds the substrate such that, when measurement is performed by the measuring means, the predetermined range located in the direction of irradiation of light irradiated from the measuring means overlaps with one of the plurality of openings.

8. The inspection apparatus according to claim 7, further comprising a support means for supporting the substrate, wherein the support means supports the substrate such that the support means and the plurality of apertures do not overlap in the irradiation direction of the light irradiated by the measuring means.

9. The inspection apparatus according to any one of claims 1 to 8, characterized in that the electrostatic chuck holds the substrate so as to extend outside the adsorption surface of the electrostatic chuck, and the electrostatic chuck irradiates the film formed on the substrate extended outside the adsorption surface with light when the measurement means is performed.

10. The inspection apparatus according to claim 9, wherein a frame extending outward from the adsorption surface and facing the substrate is connected to the electrostatic chuck, an opening is formed by the frame or by the frame and the electrostatic chuck, and the electrostatic chuck holds the substrate such that, when measured by the measuring means, the opening overlaps with the predetermined range located in the direction of irradiation of light irradiated from the measuring means.

11. The inspection apparatus according to any one of claims 1 to 10, characterized in that the predetermined range does not contain any layer with a higher reflectivity than the film to be measured whose film thickness is measured by the measuring means.

12. The inspection apparatus according to claim 2, wherein the electrostatic chuck has two electrodes, and the opening is positioned so as to be sandwiched between the two electrodes on a plane parallel to the adsorption surface of the electrostatic chuck.

13. The inspection apparatus according to claim 2, characterized in that the electrostatic chuck has electrodes, and the opening is arranged so as to be surrounded by the electrodes on a plane parallel to the adsorption surface of the electrostatic chuck.

14. The inspection apparatus according to any one of claims 1 to 13, characterized in that the electrostatic chuck holds the substrate downward, and the measuring means irradiates the substrate with light from below.

15. A film deposition apparatus comprising: a film deposition chamber for depositing a film on a substrate; and an inspection apparatus according to any one of claims 1 to 14.

16. The film deposition apparatus according to claim 15, wherein the film deposition apparatus is a cluster-type deposition apparatus, and the inspection apparatus is provided in a transfer chamber to which substrates discharged from the film deposition chamber are transported.

17. An inspection method performed by an inspection device, comprising: an adsorption step of adsorbing a substrate by electrostatic force using an electrostatic chuck of the inspection device; and a measurement step of optically measuring the film thickness by irradiating light onto a film formed in a predetermined area of ​​the substrate adsorbed in the adsorption step, wherein the electrostatic chuck adsorbs the substrate in the measurement step such that the predetermined area located in the direction of irradiation of the irradiated light does not overlap with the substrate.

18. A method for manufacturing an electronic device, comprising: a film deposition step of forming a film on a substrate; and an inspection step of inspecting the film formed in the film deposition step using the inspection method described in claim 17.

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