Manufacturing method of micro led, light-emitting element and display device

Abstract

To improve a density of a light-emitting element consisting of micro LEDs of three colors by reducing an area ratio of blue, red and green micro LEDs when forming the micro LEDs of three colors on an Si substrate.SOLUTION: Not blue, red and green micro LEDs all using InGaN quantum well layers as micro LEDs of three colors but a blue micro LED 21 using the InGaN quantum well layer, a red micro LED 22 using an AlInGaP or InGaPN quantum well layer and a green micro LED 23 using an InGaN or AlInP quantum well layer are formed and the number of quantum well layers of multiple quantum well numbers is adjusted, thereby reducing an area radio with respect to the blue micro LED required for making a light-emitting amount of the red and green micro LEDs equal with that of the blue micro LED.SELECTED DRAWING: Figure 16

Description

[Technical field]

[0001] The present invention relates to a manufacturing method for display micro LEDs in which a large number of blue, green and red micro LEDs are formed in groups on a Si substrate, a light emitting device, and a display device. [Background technology]

[0002] Currently, liquid crystal displays and organic light emitting diodes are used as display devices.

[0003] Light-emitting diodes (LEDs) are currently widely used in the field of lighting, but in recent years, micro LEDs have been developed and are beginning to be used as display devices with low power consumption (Patent Documents 1, 2, 3, and 4).

[0004] This display device uses a light-emitting element consisting of a set of three individual color micro LEDs. Here, in order to display natural colors, three color LEDs, namely, blue micro LED, green micro LED, and red micro LED, are required, and up to now, blue micro LED and green micro LED using hexagonal InGaN multiple quantum wells on a hexagonal sapphire substrate, and red micro LED using mixed crystal AlInGaP on a cubic GaAs substrate have been used (Non-Patent Documents 1, 2).

[0005] However, currently, a method has been proposed for forming a three-color microLED using a hexagonal InGaN multiple quantum well layer on a Si substrate (Patent Documents 5, 6, 7, 8). To obtain these three colors, the quantum well layer must be InGaN, and to emit blue, green, and red, the green quantum well layer must have a higher In concentration than the blue quantum well layer, and to emit red, the green quantum well layer must have an even higher In concentration. In this case, it is necessary to adjust the area of ​​the micro LEDs in consideration of the power efficiency, internal quantum efficiency, and external quantum efficiency of the blue micro LEDs, green micro LEDs, and red micro LEDs, as well as the luminosity factor. When individual micro LEDs are used, the area ratio is said to be blue micro LEDs (hexagonal InGaN multiple quantum well layer): green micro LEDs (hexagonal InGaN multiple quantum well layer): red micro LEDs (mixed crystal AlInGaP multiple quantum well layer) = 1: 7: 3. Here, the power efficiency of the green micro LEDs using the InGaN multiple quantum well layer is 15 to 40% smaller than that of the blue micro LEDs when the number of multiple quantum well layers is the same, and the power efficiency of the red micro LEDs is very small at about 4%, so that in order to obtain the same amount of light emission as the blue micro LEDs, the area ratios are required to be 2.5 to 7 times and 25 times larger, respectively, than the blue micro LEDs (Patent Documents 7, 9, and Non-Patent Document 3). Therefore, in this case, the area ratio to obtain the same efficiency considering the visual sensitivity (Non-Patent Document 1) is about blue micro LED: green micro LED: red micro LED = 1: 7: 54, and a red micro LED with a much larger area is required compared to the blue micro LED. Here, the area ratio of the green micro LED considering the visual sensitivity is 4.7, which is the intermediate value of 2.5 to 7 times calculated from the power efficiency, and this value is adjusted to the actual value of 7 considering the visual sensitivity. It is known that the amount of light emitted by an LED also depends on the number of quantum well layers in the multiple quantum well layer (Non-Patent Document 4). Therefore, when designing the area ratio of blue micro LEDs, green micro LEDs, and red micro LEDs, not only the crystal system of the multiple quantum well layer but also the number of quantum well layers must be considered. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2018-10309 A [Patent Document 2] JP 2019-204842 A [Patent Document 3] JP 2022-155471 A [Patent Document 4] JP 2022-525851 A [Patent Document 5] JP 2020-13809 A [Patent Document 6] JP 2020-13811 A [Patent Document 7] JP 2023-009202 A [Patent Document 8] JP 2023-009203 A [Patent Document 9] JP 2021-118360 A [Non-patent literature]

[0007] [Non-Patent Document 1] Applied Physics Vol. 68, No. 2, p. 139-145 (1999). [Non-Patent Document 2] Sharp Technical Report No. 84, p.63-66(2002). [Non-Patent Document 3] COMPOUND SEMICONDUCTOR vol.26, issue7, p.42(2020) [Non-Patent Document 4] Journal of Optics vol. 50(1),p.83-89(2021) Summary of the Invention [Problem to be solved by the invention]

[0008] For this reason, among micro-LEDs using hexagonal GaN, except for blue micro-LEDs, green and red micro-LEDs with high In concentration have weak luminous intensity and require a larger area than blue micro-LEDs to obtain the required amount of luminous energy, and this issue needs to be improved.In particular, when blue, green and red micro-LEDs are formed on the same Si substrate, it is essential to improve the luminous efficiency of red micro-LEDs, or green and red micro-LEDs, compared to blue micro-LEDs.

[0009] Therefore, in order to obtain high-density fine light-emitting elements, it is necessary to relatively improve the luminous efficiency of the green micro LEDs and red micro LEDs on the same Si substrate compared to the blue micro LEDs, and reduce the area of ​​the green micro LEDs and red micro LEDs.

[0010] The present invention has been made in view of the above technology, and the problem to be solved by the present invention is to realize blue micro LEDs and green micro LEDs having hexagonal GaN multiple quantum wells on the same Si substrate, and red micro LEDs having multiple quantum well layers of other crystal systems, or blue micro LEDs and green micro LEDs having cubic GaN multiple quantum well layers, and green micro LEDs and red micro LEDs having multiple quantum well layers of other cubic crystal systems, thereby improving the light emitting efficiency, or to reduce the number of quantum well layers of the multiple quantum well layers of the blue micro LED compared to the number of quantum well layers of the multiple quantum well layers of the green micro LED and the number of quantum well layers of the multiple quantum well layers of the red micro LED, thereby reducing the light emitting intensity and relatively increasing the light emitting intensity of the green micro LED and the red micro LED, thereby reducing the area of ​​the red micro LED or the green micro LED and the red micro LED. And to realize a high-density light emitting device and complete a display device using the light emitting device.

[0011] In this application, a micro LED refers to a structure in which n-type and p-type clad layers are combined with a multi-well layer stacked between them. [Means for solving the problem]

[0012] The manufacturing method described in claim 1 of the present application solves the above problem by providing a manufacturing method for forming a large number of light-emitting elements each consisting of a blue micro LED, a red micro LED, and a green micro LED, the manufacturing method comprising the steps of forming a 3C-SiC layer on a Si (111) surface, forming a GaN buffer layer thereon, and further forming an n-type GaN cladding layer, forming a blue micro LED multiple quantum well layer consisting of a GaN barrier layer and an InGaN quantum well layer on the n-type GaN cladding layer in a blue micro LED region, forming a red micro LED multiple quantum well layer consisting of the GaN barrier layer and an AlxInGa(1-x)P (0≦x≦0.7) quantum well layer on the n-type GaN cladding layer in a red micro LED region, forming a green micro LED multiple quantum well layer consisting of the GaN barrier layer and an InGaN quantum well layer on the n-type GaN layer in a green micro LED region, and forming a p-type GaN cladding layer in the blue micro LED region, the red micro LED region, and the green micro LED region.

[0013] The manufacturing method described in claim 1 of the present application forms a 3C-SiC layer on a Si(111) surface, thereby making the n-type GaN cladding layer, the GaN barrier layer, the blue InGaN quantum well layer, the green InGaN quantum well layer, and the n-type cladding layer hexagonal, and further forms a mixed crystal red AlxInGa(1-x)P (0≦x≦0.7) quantum well layer in the red micro LED region, thereby increasing the red emission intensity and achieving an area ratio of blue micro LED (hexagonal InGaN multiple quantum well layer) area: green micro LED (hexagonal InGaN multiple quantum well layer) area: red micro LED (mixed crystal AlInGaP multiple quantum well layer) area=1:7:3.

[0014] The manufacturing method described in claim 2 of the present application solves the above problem by providing a manufacturing method for forming a large number of light-emitting elements each consisting of a blue micro LED, a red micro LED, and a green micro LED, the manufacturing method comprising the steps of forming a 3C-SiC layer on a Si (111) surface, forming a GaN buffer layer thereon, and further forming an n-type GaN cladding layer, forming a blue micro LED multiple quantum well layer consisting of a GaN barrier layer and an InGaN quantum well layer on the n-type GaN cladding layer in a blue micro LED region, forming a red micro LED multiple quantum well layer consisting of the GaN barrier layer and an AlxInGa(1-x)P (0≦x≦0.7) quantum well layer on the n-type GaN cladding layer in a red micro LED region, forming a green micro LED multiple quantum well layer consisting of the GaN barrier layer and an AlInP quantum well layer on the n-type GaN layer in a green micro LED region, and forming a p-type GaN cladding layer in the blue micro LED region, the red micro LED region, and the green micro LED region.

[0015] The manufacturing method described in claim 2 of the present application includes forming a 3C-SiC layer on a Si(111) surface to form an n-type GaN cladding layer, a hexagonal GaN barrier layer, and a hexagonal blue InGaN quantum well layer, and then forming a hexagonal GaN barrier layer and a mixed crystal AlxInGa(1-x)P (0≦x≦0.7) multiple quantum well layer in the red micro LED region, and then forming a green micro LED consisting of a hexagonal GaN barrier layer and an AlInP quantum well layer on the n-type GaN layer in the green micro LED region. By forming a multiple quantum well layer for ED, the green emission intensity having an AlInP multiple quantum well layer is made equal to or greater than that of an InGaN quantum well layer, and the red emission intensity is increased, so that the area ratio of the green micro LED can be made 7 or less and the area ratio of the red micro LED can be made 3, compared to the area ratio of blue micro LED (hexagonal InGaN multiple quantum well layer) area: green micro LED (hexagonal InGaN multiple quantum well layer) area: red micro LED (mixed crystal AlInGaP multiple quantum well layer) = 1:7:3.

[0016] The manufacturing method described in claim 3 of the present application solves the above problem by providing a manufacturing method for forming a large number of light-emitting elements each consisting of the blue micro LED, the green micro LED, and the red micro LED as described in claims 1 and 2, which includes a step of forming a multiple quantum well layer for the red micro LED consisting of the GaN barrier layer and an InGaPN quantum well layer on the n-type GaN cladding layer in the red micro LED region described above.

[0017] The manufacturing method described in claim 3 of the present application forms a multiple quantum well layer for red micro LEDs consisting of the GaN barrier layer and a quantum well layer of mixed crystal InGaPN on an n-type GaN cladding layer in the red micro LED region, thereby increasing the red light emission intensity, and making it possible to set the area ratio of the green micro LED to 7 or less and the area ratio of the red micro LED to 3, compared to the area ratio of blue micro LED (hexagonal InGaN multiple quantum well layer) area: green micro LED (hexagonal InGaN multiple quantum well layer) area: red micro LED (mixed crystal AlInGaP multiple quantum well layer) area = 1:7:3.

[0018] The manufacturing method described in claim 4 of the present application solves the above problem by providing a manufacturing method for forming a large number of light-emitting elements each including a set of the blue micro LED, the green micro LED, and the red micro LED described in claims 1 to 3, in which the barrier layer described above is changed from GaN to AlGaN.

[0019] In the manufacturing method described in claim 4 of the present application, by using hexagonal AlGaN having a larger band gap as the hexagonal GaN barrier layer in claims 1 to 3, it is possible to obtain an area ratio equivalent to the area of ​​blue micro LED (hexagonal InGaN multiple quantum well layer):area of ​​green micro LED (hexagonal InGaN multiple quantum well layer):area of ​​red micro LED (mixed crystal AlInGaP multiple quantum well layer)=1:7:3 described in claims 1 to 3.

[0020] The manufacturing method described in claim 5 of the present application solves the above problem by providing a manufacturing method for forming a large number of light-emitting elements each including a set of blue micro LEDs, red micro LEDs, and green micro LEDs, the manufacturing method comprising the steps of forming a 3C-SiC layer on a Si (100) surface, forming the GaN buffer layer thereon, and further forming an n-type GaN cladding layer, forming a blue micro LED multiple quantum well layer consisting of a GaN barrier layer and an InGaN quantum well layer on the n-type GaN cladding layer in a blue micro LED region, forming a red micro LED multiple quantum well layer consisting of the GaN barrier layer and an AlxInGa(1-x)P (0≦x≦0.7) quantum well layer on the n-type GaN cladding layer in a red micro LED region, forming a green micro LED multiple quantum well layer consisting of the GaN barrier layer and an InGaN quantum well layer on the n-type GaN cladding layer in a green micro LED region, and forming a p-type GaN cladding layer in the blue micro LED region, the red micro LED region, and the green micro LED region.

[0021] The manufacturing method described in claim 5 of the present application forms the 3C-SiC layer on a Si(100) surface, thereby making the n-type GaN cladding layer, GaN barrier layer, blue InGaN quantum well layer, green InGaN quantum well layer, and p-type cladding layer into a cubic crystal system or a crystal system close thereto, and further making the red micro LED quantum well layer into a mixed crystal AlxInGa(1-x)P (0≦x≦0.7) quantum well layer which is a material different from the InGaN quantum well layer. As a result, compared to the area ratio of blue micro LED (hexagonal InGaN multiple quantum well layer) area: green micro LED (hexagonal InGaN multiple quantum well layer) area: red micro LED (mixed crystal AlInGaP multiple quantum well layer) area=1:7:3, the area ratio of the green micro LED can be 7 or less, and the area ratio of the red micro LED can be 3.

[0022] The manufacturing method described in claim 6 of the present application solves the above problem by providing a manufacturing method for forming a large number of light-emitting elements consisting of the blue micro LED, the green micro LED, and the red micro LED as described in claim 5, which includes a step of forming a multiple quantum well layer for the red micro LED consisting of the GaN barrier layer and an InGaPN quantum well layer on the n-type GaN cladding layer.

[0023] The manufacturing method described in claim 6 of the present application can obtain an emission intensity equivalent to that of the red micro LED of claim 5 by changing the quantum well layer in the red micro LED region from the red micro LED quantum well layer of claim 5 to a mixed crystal InGaPN quantum well layer, and as a result, compared to the area ratio of blue micro LED (hexagonal InGaN multiple quantum well layer) area: green micro LED (hexagonal InGaN multiple quantum well layer) area: red micro LED (mixed crystal AlInGaP multiple quantum well layer) area = 1:7:3, the area ratio of the green micro LED can be 7 or less, and the area ratio of the red micro LED can be 3.

[0024] The manufacturing method described in claim 7 of the present application solves the above problem by providing a manufacturing method for forming a large number of light-emitting elements, each of which is a set of the blue micro LED, the red micro LED, and the green micro LED of any one of claims 1 to 6, comprising a step of forming the 3C-SiC layer on the n-type GaN buffer layer in the blue micro LED, red micro LED, and green micro LED regions described above.

[0025] The manufacturing method described in claim 7 of the present application can improve the crystallinity of the hexagonal and cubic n-type GaN cladding layer, GaN barrier layer, hexagonal AlGaN barrier layer, p-type GaN cladding layer, and mixed crystal red micro LED AlxInGa(1-x)P (0≦x≦0.7) quantum well layer and InGaPN quantum well layer by forming a 3C-SiC layer on an n-type GaN buffer layer, and can also improve the crystallinity of the hexagonal green micro LED AlInP quantum well layer, thereby increasing the red and green light emission intensity. As a result, compared to the area ratio of blue micro LED (hexagonal InGaN multiple quantum well layer) area: green micro LED (hexagonal InGaN multiple quantum well layer) area: red micro LED (mixed crystal AlInGaP multiple quantum well layer) area = 1: 7: 3, the area ratio of the green micro LED can be 7 or less, and the area ratio of the red micro LED can be 3 or less.

[0026] The manufacturing method described in claim 8 of the present application solves the above problem by providing a manufacturing method for forming a large number of light-emitting elements each consisting of a set of the blue micro LED, the red micro LED, and the green micro LED of any one of claims 1 to 7, which includes a step of making the number of quantum well layers in the multiple well layer for the blue micro LED less than the number of quantum well layers in the multiple quantum well layer for the red micro LED and the number of quantum well layers in the multiple quantum well layer for the green micro LED in the blue micro LED, red micro LED, and green micro LED regions described above.

[0027] The manufacturing method described in claim 8 of the present application is to reduce the quantum well layer number of the multiple quantum well layer for blue micro LEDs to be smaller than the quantum well layer number of the multiple quantum well layer for red micro LEDs and the quantum well layer number of the multiple quantum well layer for green micro LEDs, thereby relatively reducing the emission intensity of the blue micro LEDs to the emission intensity of the red micro LEDs and the green micro LEDs, thereby reducing the area ratio of the red micro LEDs and the green micro LEDs to the area of ​​the blue micro LEDs required to make the emission intensity uniform, and improving the density of the light emitting element consisting of a set of blue micro LEDs, red micro LEDs, and green micro LEDs. As a result, compared to the area ratio of blue micro LEDs (hexagonal InGaN multiple quantum well layer) area: green micro LEDs (hexagonal InGaN multiple quantum well layer) area: red micro LEDs (mixed crystal AlInGaP multiple quantum well layer) area = 1: 7: 3, the area ratio of the green micro LEDs is less than 7, and the area ratio of the red micro LEDs is less than 3.

[0028] The light-emitting element described in claim 9 of the present application solves the above problem by providing a large number of light-emitting elements, each of which is a set of the blue micro LED, the red micro LED, and the green micro LED manufactured by the manufacturing method of any one of claims 1 to 4.

[0029] The light-emitting device described in claim 9 of the present application realizes a red micro LED with improved light emission intensity by forming a hexagonal GaN barrier layer, an AlGaN barrier layer, a hexagonal blue micro LED InGaN quantum well layer, a hexagonal green micro LED AlInP quantum well layer, and a mixed crystal red micro LED AlInGaPN quantum well layer on a hexagonal n-type GaN cladding layer, and as a result, a green micro LED and a red micro LED can be obtained in which the area ratio of the green micro LED is 7 or less and the area ratio of the red micro LED is 3, compared to the area ratio of blue micro LED (hexagonal InGaN multiple quantum well layer): green micro LED (hexagonal InGaN multiple quantum well layer): red micro LED (mixed crystal AlInGaP multiple quantum well layer) = 1:7:3.

[0030] The light-emitting element described in claim 10 of the present application solves the above problem by providing a large number of light-emitting elements, each of which is a set of the blue micro LED, the red micro LED, and the green micro LED, manufactured by the manufacturing method of any one of claims 5 to 6.

[0031] The light-emitting element described in claim 10 of the present application realizes green micro LEDs and red micro LEDs with improved light emission intensity by forming a cubic blue micro LED InGaN quantum well layer, a cubic green micro LED InGaN quantum well layer, a mixed crystal red micro LED AlInGaP layer, and an InGaPN quantum well layer on a cubic n-type GaN cladding layer, and as a result, green micro LEDs and red micro LEDs with an area ratio of 7 or less and an area ratio of 3 for the red micro LEDs can be obtained, compared to the area ratio of blue micro LED (hexagonal InGaN multiple quantum well layer) area: green micro LED (hexagonal InGaN multiple quantum well layer) area: red micro LED (mixed crystal AlInGaP multiple quantum well layer) area = 1:7:3.

[0032] The light-emitting element described in claim 11 of the present application solves the above problem by providing a large number of light-emitting elements, each of which is a set of the blue-emitting micro LED, the red-emitting micro LED, and the green-emitting micro LED manufactured by the manufacturing method described in claim 7.

[0033] The light-emitting device according to claim 11 of the present application is characterized in that a 3C-SiC layer is formed on a GaN buffer layer, and a 3C-SiC(111) surface is formed on Si(111) to facilitate the formation of a hexagonal crystal system, and the crystallinity of the hexagonal n-type GaN cladding layer, blue micro-LED InGaN quantum well layer, green micro-LED InGaN quantum well layer, AlInP quantum well layer, and mixed crystal red micro-LED AlInGaP layer, InGaPN quantum well layer, and hexagonal p-type GaN cladding layer is improved, and a 3C-SiC(100) surface is formed on Si(100) to facilitate the formation of a cubic crystal system with a close lattice constant, and the cubic n-type GaN cladding layer, blue micro-LED InGaN quantum well layer, and AlInP quantum well layer are improved, and a 3C-SiC(100) surface is formed on Si(100) to facilitate the formation of a cubic crystal system with a close lattice constant, and the crystallinity of the cubic n-type GaN cladding layer, blue micro-LED InGaN quantum well layer, and AlInP quantum well layer are improved, and the crystallinity of the mixed crystal red micro-LED AlInGaP layer, InGaPN quantum well layer, and hexagonal p-type GaN cladding layer is ... By increasing the crystallinity of the LED InGaN quantum well layer, the green micro LED InGaN quantum well layer, the mixed crystal red micro LED AlxInGa(1-x)P (0≦x≦0.7) layer, the InGaPN quantum well layer, and the cubic crystal p-type GaN cladding layer, it is possible to obtain green and red micro LEDs with an area ratio of 7 or less and an area ratio of 3, compared to the area ratio of blue micro LED (hexagonal crystal InGaN multiple quantum well layer) area: green micro LED (hexagonal crystal InGaN multiple quantum well layer) area: red micro LED (mixed crystal AlInGaP multiple quantum well layer) area = 1:7:3. In addition, the 3C-SiC layer acts as an etching stopper layer when etching the GaN buffer layer, and can protect the lower n-type GaN cladding layer.

[0034] The light-emitting element described in claim 12 of the present application solves the above problem by providing a large number of light-emitting elements, each of which is a set of the blue micro LED, the red micro LED, and the green micro LED manufactured by the manufacturing method described in claim 8.

[0035] The light-emitting element described in claim 12 of the present application is manufactured by the manufacturing method described in claim 8, and by reducing the light-emitting intensity of the blue micro LED relatively compared to the light-emitting intensity of the red micro LED and the green micro LED, the area ratio of the red micro LED and the green micro LED to the area of ​​the blue micro LED required to make the light-emitting intensity uniform is reduced, thereby realizing a high density of the light-emitting element consisting of a set of blue micro LEDs, red micro LEDs, and green micro LEDs.

[0036] The display device described in claim 13 of the present application solves the above problem by comprising a large number of light-emitting elements, each of which is a set of the blue micro LED, the green micro LED, and the red micro LED, manufactured by the manufacturing method of any one of claims 1 to 7.

[0037] The display device described in claim 13 of the present application can realize a light-emitting element having an emission intensity equal to or greater than that of a current light-emitting element consisting of a set of three individual color micro LEDs, thereby realizing a display element for high-density images. Effect of the Invention

[0038] In a conventional light-emitting device structure consisting of a set of blue, green, and red micro LEDs on a Si wafer, in order to obtain the same amount of light emission while taking into account visual sensitivity, the area ratio of the blue, green, and red micro LEDs having INGaN multiple quantum well layers is approximately 1:7:54.

[0039] In the present invention, by changing the quantum well layer of the red micro-LED or the quantum well layer of the green micro-LED and the red micro-LED to a layer of a composition other than InGaN, and by changing the multiple quantum wells of the blue micro-LED having InGaN multiple quantum wells and the green micro-LED having InGaN multiple quantum wells from a hexagonal crystal system to a cubic crystal system, the emission intensity of green is made equal to or greater than that of a hexagonal InGaN quantum well layer, and the emission intensity of the red micro-LED is significantly increased, so that the area ratio of the blue micro-LED, the green micro-LED, and the red micro-LED can be made approximately 1:7:3 or less.

[0040] In a light-emitting element consisting of a set of blue, green, and red micro LEDs formed on a Si wafer, a light-emitting device having fine light-emitting elements can be realized by reducing the area ratio of the green micro LEDs to the blue micro LEDs and further significantly reducing the area ratio of the red micro LEDs. [Brief description of the drawings]

[0041] [Figure 1] 1 shows a process for preparing a semiconductor substrate. [Figure 2a] The figure shows the state after the process of forming a 3C-SiC layer and a GaN buffer layer on both sides of the Si substrate to form a light-emitting element consisting of blue, green, and blue micro-LEDs. [Figure 2b] The figure shows the state after the process of forming a 3C-SiC layer, a GaN buffer layer, and a 3C-SiC layer on both sides of the Si substrate to form a light-emitting element consisting of blue, green, and blue micro-LEDs. [Diagram 3] The figure shows the state after the process of forming n-type GaN epitaxial layers (n-type cladding layers) on both sides of the Si substrate. [Figure 4] The state after the process of forming insulating layers on both sides of the Si substrate is shown. [Diagram 5] This shows the state after the process of depositing insulating layers on both sides of the Si substrate and etching the insulating film in the area for forming the blue micro LED. [Figure 6]The figure shows the state after the process of depositing a multiple quantum well layer for blue micro-LEDs on both sides of a Si substrate, forming a multiple quantum well layer for blue micro-LEDs in an etching region, and removing the multiple quantum well layer on an insulating layer. [Figure 7] 4 shows the state after a process of depositing insulating layers on both sides of the Si substrate. [Figure 8] This shows the state after the process of etching the insulating layer in the green micro LED formation area. [Figure 9] The figure shows the state after the process of depositing a multiple quantum well layer for red micro-LEDs on both sides of the Si substrate and forming a multiple quantum well layer for red micro-LEDs in the etched region. [Figure 10] 4 shows the state after a process of depositing insulating layers on both sides of the Si substrate. [Figure 11] This shows the state after the process of etching the insulating film in the red micro LED formation area. [Figure 12] The figure shows the state after the process of depositing a multiple quantum well layer for green micro-LEDs on both sides of the Si substrate and forming a multiple quantum well layer for green micro-LEDs in the etched region. [Figure 13] The figure shows the state after the process of etching the insulating layer in the areas for forming blue and red micro LEDs. [Figure 14] 1 shows the state after a process of forming a p-type GaN epitaxial layer (p-type cladding layer) in the formation areas of blue, red, and green micro LEDs. [Figure 15] The figure shows the state after the process of forming an electrode layer on the p-type GaN epitaxial layer (p-type cladding layer) on the surface of the semiconductor substrate and separating them. The dotted line indicates the region where the light-emitting element will be formed. [Figure 16] The figure shows the state after a process of forming an insulating layer (SOG) between blue, red, and green micro LEDs on the semiconductor substrate surface. [Figure 17] The process of grinding the backside p-type GaN epitaxial layer, the multiple quantum well layer, the n-type GaN epitaxial layer, the GaN buffer layer, the 3-SiC layer, and the Si substrate is shown. The area surrounded by the dotted line is the area to be ground. [Figure 18]The figure shows the state after the process of grinding the p-type GaN epitaxial layer, the multiple quantum well layer, the n-type GaN epitaxial layer, the GaN buffer layer, the 3-SiC layer, and the Si on the back surface. [Figure 19] This shows the state after the process of cutting out a light emitting element block from a Si wafer. Here, the process of cutting out one rectangular light emitting element block is shown, but the size and number of the block can be arbitrary. [Figure 20] 1 shows a state after a process of attaching alignment marks for aligning with a wiring board to ends and side surfaces of the light emitting element blocks corresponding to the horizontal and vertical wiring positions after cutting out the light emitting element blocks. [Figure 21] 13 shows a process of inverting a light emitting element block having light emitting elements formed therein for transfer onto a wiring substrate. [Figure 22a] 1 shows a plan view of a wiring substrate for transferring light emitting element blocks. The corners of the substrate are rounded, and alignment / contact wiring connected to the front surface wiring is formed vertically and horizontally on the rear surface of the substrate. [Figure 22b] The corners of the substrate are rounded, and the alignment / contact wiring connected to the surface wiring is formed horizontally on the rear surface of the substrate. [Figure 22c] The vertical cross-sectional view of the wiring board is shown. The corners of the board are rounded, and the alignment / contact wiring connected to the front wiring is formed vertically on the back side of the board. [Figure 23a] 1 shows a plan view of a wiring substrate having through via holes for transferring light emitting element blocks. Alignment and contact wiring connected to the front surface wiring is formed vertically and horizontally on the rear surface of the substrate. [Figure 23b] 1 shows a cross-sectional view of a wiring substrate with a through via hole. On the back surface of the substrate, an alignment / contact wiring is formed in the horizontal direction, connected to the front surface wiring. [Figure 23c] 1 shows a vertical cross-sectional view of a wiring substrate with a through via hole. An alignment / contact wiring connected to the upper wiring is formed vertically on the back surface of the substrate. [Figure 24]1 shows the positional relationship between the light emitting element block and the transfer portion of the wiring board onto which it is transferred. [Diagram 25] 11 shows a state after a step of transferring the light emitting element blocks and the wiring substrate. [Figure 26] 13 shows a state after a process of forming a resist film or the like on surfaces other than the back surface of the light emitting element block. [Figure 27] The figure shows a state after a process in which, after the light-emitting element block and the wiring substrate are transferred, the semiconductor substrate is etched, and the SiC layer and the GaN buffer layer are further etched. [Figure 28a] This shows a cross-sectional view after the steps of removing the resist, applying an insulating film, etching a part of the outermost periphery, and forming upper wiring. [Figure 28b] 13 is a vertical cross-sectional view after the steps of removing the resist, applying an insulating film, etching a part of the outermost periphery, and forming upper wiring. [Figure 29] The display substrate is shown. The wiring intervals are different. Above the lower wiring, there is a vertical alignment / contact wiring that connects to the upper wiring, sandwiching an insulating layer. [Diagram 30] 1 shows the state after the process of transferring a plurality of light-emitting element mounting wiring substrates to a display substrate. The wiring spacing is different, with the lower wiring shown by dotted lines and the upper wiring shown by solid lines. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0042] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The drawings show specific manufacturing steps for realizing the structure shown in the drawings. In each drawing, the same parts are given the same reference numerals. (Embodiment 1)

[0043] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED according to claim 1.

[0044] In this embodiment, as shown in FIG. 1, a Si wafer (111) surface 1 is prepared. As shown in FIG. 2a, a 50-100 nm SiC buffer layer (included in 2a) is formed on both sides of a semiconductor substrate 1 by metal organic chemical vapor deposition (MOCVD) (not shown) using SiH4, CH4, and H2 gas at 900°C and 40 Pa, and then a 50-300 nm 3C-SiC layer 2a is formed on both sides of the Si wafer (111) surface 1 at 1000°C and 40 Pa. Next, a 3C-SiC layer 2a is formed on both sides of the Si wafer (111) surface 1 at 600°C to 800°C by MOCVD or MOCVD using remote plasma. A 3-30 μm GaN buffer layer 3 is formed using Ga(CH3)3, In(CH3)3, NH3, and H2 gases at 40 Pa, and then, as shown in FIG. 3, a 0.3-2 μm n-type GaN cladding layer 4 is formed on both sides of the Si wafer (111) surface 1 by MOCVD (27 Pa) using Ga(CH3)3, In(CH3)3, NH3, H2 gas, and SiH4 at 1000°C, and an insulating layer 5 is formed on both sides of the Si wafer (111) surface 1 by low-pressure CVD (not shown) at 625°C and 30 Pa using SiH4 and O2 gas.

[0045] Next, as shown in FIG. 5, the insulating layer 5 in the insulating layer etching region 6 for forming the blue micro LED is etched, and as shown in FIG. 6, in the etched region 6, 2 to 6 layers of multiple quantum well layers 7 for blue micro LEDs, consisting of GaN barrier layers and InGaN quantum well layers, are formed to a thickness of 10 to 100 nm by MOCVD method (27 Pa) at 1000° C. using Ga(CH3)3, In(CH3)3, NH3, and H2 gases, and Ga(CH3)3, In(CH3)3, NH3, and H2 gases, respectively.

[0046] Next, as shown in Fig. 7, the insulating layer 8 is formed on both sides of the Si wafer (111) surface 1 by the above-mentioned method at 50 nm. Then, as shown in Fig. 8, the insulating films 8 and 5 in the insulating layer etching region 9 for forming the red micro LED are etched, and as shown in Fig. 9, in the etched region, 2 to 6 layers of GaN barrier layers and multiple quantum well layers 13 for red micro LEDs, each consisting of AlxInGa(1-x)P quantum well layers, are formed at 1000 °C and 10 to 100 nm by MOCVD method (27 Pa) using Ga(CH3)3, NH3, and H2 gas, and Ga(CH3)3, In(CH3)3, PH3, and H2 gas, respectively.

[0047] Next, as shown in Fig. 10, the insulating layer 11 is formed on both sides of the Si wafer (111) surface 1 by the above-mentioned method to a thickness of 50 nm. Then, as shown in Fig. 11, the insulating films 11, 8, and 5 in the insulating layer etching region 12 for forming the green micro LED are etched, and as shown in Fig. 12, in the etched region, 2 to 6 layers of GaN barrier layers and multiple quantum well layers 13 for green micro LEDs, each consisting of an InGaN quantum well layer, are formed at 1000 °C by the MOCVD method (27 Pa) using Ga(CH3)3, NH3, and H2 gas, and Ga(CH3)3, In(CH3)3, NH3, and H2 gas, respectively.

[0048] Next, the insulating layers 11 and 8 in the insulating layer etching region 6 for forming the blue micro LED and the insulating layer etching region 9 for forming the red micro LED are etched as shown in FIG. 13. These regions are designated as 14a and 14b, respectively. The insulating layer etching region for forming the green micro LED is designated as 12.

[0049] Next, as shown in FIG. 14, in the blue micro LED region 14a, the red micro LED region 14b, and the green micro LED region 12, a 0.3 to 2 μm Mg-doped GaN epitaxial layer is formed at 1000°C by MOCVD (27 Pa) using Ga(CH3)3, NH3, bis(cyclopentadienyl)magnesium (Cp2Mg) and H2 gas, and the Mg is activated in O2-containing N2 to form a p-type GaN clad layer 15.

[0050] Next, as shown in FIG. 15, an electrode layer 16 is formed on the p-type GaN cladding layer 15 of the blue micro LED region 14a, the red micro LED region 14b, and the green micro LED region 12, and then the micro LEDs are separated by etching.

[0051] Next, an insulating layer 17 is embedded in the etched regions between the micro LEDs as shown in Fig. 16. By the manufacturing method described above, a large number of light-emitting elements 27, each of which includes a blue micro LED 21, a red micro LED 22, and a green micro LED 23, are formed on the Si wafer (111) surface 1.

[0052] The reason for forming the CVD film on both sides of the Si wafer (111) surface 1 is to prevent warping of the Si wafer, which causes crystal defects in micro-LEDs. However, the n-type GaN cladding layer 4, the blue, red, and green multiwell layers 7, 10, and 13, and the p-type GaN cladding layer 15 may be formed only on the surface of the Si wafer (111) surface 1, since they are less affected by stress than the 3C-SiC layer 2 and the GaN buffer layer 3. Note that, although the p-type GaN cladding layer is disposed above the n-type GaN cladding layer here, the n-type GaN cladding layer may be disposed above the p-type GaN cladding layer conversely. (Embodiment 2)

[0053] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED according to claim 1.

[0054] In this embodiment, unlike the first embodiment, when forming the multiple quantum well layer, the ALD method is used instead of the MOCVD method (27 Pa), and the multiple quantum well layer 7 for the blue micro LED, the multiple quantum well layer 10 for the red micro LED, and the multiple quantum well layer 13 for the green micro LED are formed at 650 to 750°C using the same gas as in the first embodiment, and the other manufacturing methods are the same as in the first embodiment, and a large number of light-emitting elements 27 are formed, each of which is a set of a blue micro LED 21, a red micro LED 22, and a green micro LED 23. (Embodiment 3)

[0055] This embodiment is an embodiment for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED according to claim 1.

[0056] In this embodiment, unlike the first embodiment, a multi-well layer for a blue micro LED, a multi-well layer for a red micro LED, and a multi-well layer for a green micro LED are formed by the MOCVD method (27 Pa) using remote plasma.

[0057] In this embodiment, similarly to the method described in the first embodiment, when forming a multiple quantum well layer, 2 to 6 layers of multiple quantum well layers 13 for blue micro LEDs consisting of GaN barrier layers and InGaN quantum well layers are formed in a thickness of 10 to 100 nm by MOCVD method (27 Pa) using remote plasma at 800 to 1000° C. using Ga(CH3)3, NH3, and N2 gases, and Ga(CH3)3, In(CH3)3, NH3, and N2 gases, respectively, and also at 800 to 1000° C. using Ga(CH3)3, NH3, and N2 gases, and Al(C Using H3)3, Ga(CH3)3, In(CH3)3, PH3, and He gas, a multi-quantum well layer 13 for red micro LEDs consisting of a GaN barrier layer and an AlxInGa(1-x)P quantum well layer is formed in 2 to 6 layers, 10 to 100 nm, and further using Ga(CH3)3, NH3, and N2 gas, and Ga(CH3)3, In(CH3), NH3, and N2 gas, respectively, at 800 to 1000 ° C., a multi-quantum well layer 13 for green micro LEDs consisting of a GaN barrier layer and an InGaN quantum well layer is formed in 2 to 6 layers, 10 to 100 nm. The other manufacturing methods are the same as those of embodiment 1, and a large number of light-emitting elements 27 consisting of a set of blue micro LEDs 21, red micro LEDs 22, and green micro LEDs 23 are formed. (Embodiment 4)

[0058] This embodiment is an embodiment for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED according to claim 1.

[0059] In this embodiment, unlike the third embodiment, when forming a multiple quantum well layer, instead of the MOCVD method (27 Pa) using remote plasma, the ALD method using remote plasma is used to form the multiple quantum well layer 7 for the blue micro LED, the multiple quantum well layer 10 for the red micro LED, and the multiple quantum well layer 13 for the green micro LED at 500 to 750°C using the same gas as in the third embodiment, and the other manufacturing methods are the same as those in the first embodiment, and a large number of light-emitting elements 27 are formed, each of which is a set of a blue micro LED 21, a red micro LED 22, and a green micro LED 23. (Embodiment 5)

[0060] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 2.

[0061] In this embodiment, similarly to the method described in the first embodiment, a blue micro LED 21 is formed on a Si (111) surface 1, and then, in an insulating layer etching region 9 for forming a red micro LED, a GaN barrier layer is formed by using Ga(CH3)3, NH3, and H2 gases at 1000°C by MOCVD method (27 Pa), and an AlxInGa(1-x)P quantum well layer is formed by using Al(CH3)3, Ga(CH3)3, In(CH3)3, PH3, and H2 gases, respectively, to form a multiple quantum well layer 10 for a red micro LED. These are formed in 2 to 6 layers, 10 to 100 nm, and then, insulating layer etching for forming a green micro LED is performed. In region 12, a GaN barrier layer and an AlInP quantum well layer are formed at 1000°C by MOCVD (27 Pa) using Ga(CH3)3, NH3, and H2 gases, as well as Al(CH3)3, In(CH3)3, PH3, and H2 gases, to form an AlInP multiple quantum well layer 13 for green micro LEDs. Two to six of these are stacked, and on top of them, a 0.3 to 2 μm Mg-doped GaN epitaxial layer is formed at 1000°C by MOCVD (27 Pa) using Ga(CH3)3, NH3, Cp2Mg, and H2 gases at 1000°C. The Mg is activated in O2-containing N2 to form a p-type GaN cladding layer 15. The other manufacturing methods are the same as those of the first embodiment, and a large number of light-emitting elements 27, each of which includes a blue micro LED 21, a red micro LED 22, and a green micro LED 23, are formed. (Embodiment 6)

[0062] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 2.

[0063] In this embodiment, unlike the fifth embodiment, when forming the multiple quantum well layer, the ALD method is used instead of the MOCVD method (27 Pa), and the multiple quantum well layer 7 for the blue micro LED, the multiple quantum well layer 10 for the red micro LED, and the multiple quantum well layer 13 for the green micro LED are formed at 650 to 750°C using the same gas as in the fifth embodiment, and the other manufacturing methods are the same as in the first embodiment, and a large number of light-emitting elements 27 are formed, each of which is a set of a blue micro LED 21, a red micro LED 22, and a green micro LED 23. (Embodiment 7)

[0064] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 2.

[0065] In this embodiment, unlike the fifth embodiment, a multi well layer for a blue micro LED, a multi well layer for a red micro LED, and a multi well layer for a green micro LED are formed by MOCVD using remote plasma.

[0066] In this embodiment, when forming a multiple quantum well layer by the method described in embodiment 5, a multiple quantum well layer 7 for blue micro LEDs consisting of a GaN barrier layer and a GaInN quantum well layer is formed in 2 to 6 layers and 10 to 100 nm in thickness in an insulating layer etching region 6 for forming a blue micro LED by MOCVD method (27 Pa) using a remote plasma at 800 to 1000° C. using Ga(CH3)3, NH3, and N2 gases, and Ga(CH3), In(CH3)3, NH3, and N2 gases, respectively. In addition, a multiple quantum well layer 7 for blue micro LEDs consisting of a GaN barrier layer and a GaInN quantum well layer is formed in an insulating layer etching region 9 for forming a red micro LED by MOCVD method (27 Pa) using Ga(CH3)3, NH3, and N2 gases, respectively. In addition, Al(CH3)3, Ga(CH3)3, In(CH3)3, PH3, and He gas are used to form 2 to 6 layers of red micro LED multiple quantum well layers 10 consisting of GaN barrier layers and AlxInGa(1-x)P quantum well layers at 800 to 1000°C, and further, Ga(CH3)3, NH3, and N2 gas, and Al(CH3)3, In(CH3)3, PH3, and He gas are used to form 2 to 6 layers of green micro LED multiple quantum well layers 13 consisting of GaN barrier layers and AlInP quantum well layers at 800 to 1000°C, and further, Ga(CH3)3, NH3, and N2 gas, and Al(CH3)3, In(CH3)3, PH3, and He gas are used to form 2 to 6 layers of green micro LED multiple quantum well layers 13 consisting of GaN barrier layers and AlInP quantum well layers at 800 to 1000°C. The other manufacturing methods are the same as those of the first embodiment, and a large number of light emitting elements 27 consisting of a set of blue micro LEDs 21, red micro LEDs 22, and green micro LEDs 23 are formed. (Embodiment 8)

[0067] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 2.

[0068] In this embodiment, unlike the seventh embodiment, when forming a multiple quantum well layer, instead of the MOCVD method (27 Pa) using remote plasma, the ALD method using remote plasma is used to form the multiple quantum well layer 7 for the blue micro LED, the multiple quantum well layer 10 for the red micro LED, and the multiple quantum well layer 13 for the green micro LED at 500 to 750°C using the same gas as in the seventh embodiment, and the other manufacturing methods are the same as those in the first embodiment, and a large number of light-emitting elements 27 are formed, each of which is a set of a blue micro LED 21, a red micro LED 22, and a green micro LED 23. (Embodiment 9)

[0069] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 3.

[0070] In this embodiment, blue micro LEDs 21 and green micro LEDs 23 (GaN barrier layer, AlInP, and InGaN quantum well layer) are formed on the Si (111) surface 1 in the same manner as in the methods described in the first and fifth embodiments, but in the insulating layer etching region 9 for forming red micro LEDs, a GaN barrier layer and an InGaPN quantum well layer are used as the red multiple quantum well layer 10. The GaN barrier layer and the InGaPN quantum well layer are formed by the MOCVD method (27 Pa) at 1000°C using Ga(CH3)3, NH3, and H2 gas, and In(CH3)3, Ga(CH3)3, PH3, NH3, and H2 gas, respectively. The other manufacturing methods are the same as those of the first embodiment, and a large number of light-emitting elements, each consisting of a blue micro LED 21, a red micro LED 22, and a green micro LED 23, are formed on the Si wafer (111) surface 1. (Embodiment 10)

[0071] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 3.

[0072] In this embodiment, unlike the embodiment 9, when forming the multiple quantum well layer, the ALD method is used instead of the MOCVD method (27 Pa), and the multiple quantum well layer 7 for the blue micro LED, the multiple quantum well layer 10 for the red micro LED, and the multiple quantum well layer 13 for the green micro LED are formed at 650 to 750°C using the same gas as in the embodiment 9, and the other manufacturing methods are the same as in the embodiment 1, and a large number of light-emitting elements 27 are formed, each of which is a set of a blue micro LED 21, a red micro LED 22, and a green micro LED 23. (Embodiment 11)

[0073] This embodiment is for forming the multiple quantum well layer 7 for a blue micro LED, the multiple quantum well layer 10 for a red micro LED, and the multiple quantum well layer 13 for a green micro LED of claim 3.

[0074] In this embodiment, unlike the ninth embodiment, when forming a multiple quantum well layer, a multiple quantum well layer 7 for blue micro LEDs, which is composed of a GaN barrier layer and an InGaPN quantum well layer, is formed in 2 to 6 layers and 10 to 100 nm in thickness in the insulating layer etching region 6 for forming a blue micro LED by MOCVD method (27 Pa) using remote plasma at 800 to 1000° C. using Ga(CH3)3, NH3, and N2 gases, and Ga(CH3), In(CH3)3, NH3, and N2 gases, respectively, and in the insulating layer etching region 9 for forming a red micro LED, Ga(CH3)3, NH3, and N2 gases, and Ga(CH3)3, In( Using CH3)3, PH3, HN3, and H2 gas, a multi-quantum well layer 10 for red micro LEDs consisting of a GaN barrier layer and an InGaPN quantum well layer is formed in 2 to 6 layers, 10 to 100 nm, and further, using Ga(CH3)3, NH3, and N2 gas, and Al(CH3)3, In(CH3)3, PH3, and He gas, or Ga(CH3)3, In(CH3)3, NH3, and N2 gas, a multi-quantum well layer 13 for green micro LEDs consisting of a GaN barrier layer and an AlInP quantum well layer or an InGaN quantum well layer is formed in 2 to 6 layers, 10 to 100 nm in the insulating layer etching region 12 for forming green micro LEDs. The other manufacturing methods are the same as those of embodiment 1, and a large number of light-emitting elements each consisting of a blue micro LED 21, a red micro LED 22, and a green micro LED 23 are formed as a set. (Embodiment 12)

[0075] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 3.

[0076] In this embodiment, unlike the embodiment 11, when forming a multiple quantum well layer, instead of the MOCVD method (27 Pa) using remote plasma, the ALD method using remote plasma is used, and the multiple quantum well layer 7 for the blue micro LED, the multiple quantum well layer 10 for the red micro LED, and the multiple quantum well layer 13 for the green micro LED are formed at 500 to 750°C using the same gas as in the embodiment 11, and the other manufacturing methods are the same as in the embodiment 1, and a large number of light-emitting elements 27 are formed, each of which is a set of a blue micro LED 21, a red micro LED 22, and a green micro LED 23. (Embodiment 13)

[0077] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 4.

[0078] In this embodiment, a blue micro LED 21, a red micro LED 22, and a green micro LED 23 are formed on a Si(111) surface 1 in the same manner as in the methods described in the first to twelfth embodiments, but the barrier layers used for the blue, red, and green micro LED multiwell layers 7, 10, and 13 are changed from GaN layers to AlGaN layers. The AlGaN barrier layers are formed by the MOCVD method (27 Pa) at 1000°C using Al(CH3)3, Ga(CH3)3, NH3, and H2 gases. By the manufacturing method described above, a large number of light-emitting elements 27, each of which is a set of a blue micro LED 21, a red micro LED 22, and a green micro LED 23, are formed. (Embodiment 14)

[0079] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 4.

[0080] In this embodiment, a blue micro LED 21, a red micro LED 22, and a green micro LED 23 are formed in the same manner as in the methods described in the first to twelfth embodiments, but the barrier layers used in the blue, red, and green micro LED multiwell layers 7, 10, and 13 are changed from GaN layers to AlGaN layers. The AlGaN barrier layers are formed by the ALD method at 650 to 750°C using Al(CH3)3, Ga(CH3)3, NH3, and H2 gas. By the manufacturing method described above, a large number of light-emitting elements 27 are formed, each of which is a set of a blue micro LED 21, a red micro LED 22, and a green micro LED 23. (Embodiment 15)

[0081] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 4.

[0082] In this embodiment, a blue micro LED 21, a red micro LED 22, and a green micro LED 23 are formed in the same manner as in the methods described in the first to twelfth embodiments, but the barrier layers used in the multiwell layers 7, 10, and 13 for the blue, red, and green micro LEDs are changed from GaN layers to AlGaN layers. The AlGaN barrier layers are formed by using Al(CH3)3, Ga(CH3)3, NH3, and N2 gases at 800 to 1000°C by the MOCVD method (27 Pa) using remote plasma. By the manufacturing method described above, a large number of light-emitting elements 27, each of which is a set of a blue micro LED 21, a red micro LED 22, and a green micro LED 23, are formed. (Embodiment 16)

[0083] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 4.

[0084] In this embodiment, unlike the fifteenth embodiment, the AlGaN barrier layer is formed by using the ALD method using remote plasma instead of the MOCVD method (27 Pa) using remote plasma, and by using Al(CH3)3, Ga(CH3)3, NH3 and N2 gas at 500 to 750° C. By the manufacturing method described above, a large number of light emitting elements 27, each of which includes a blue micro LED 21, a red micro LED 22 and a green micro LED 23, are formed. (Embodiment 17)

[0085] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 5.

[0086] In this embodiment, as shown in FIG. 1, a Si wafer (100) surface 1 is prepared. As shown in FIG. 2a, a SiC buffer layer (included in 2a) of 50 to 100 nm is formed on both sides of a semiconductor substrate 1 by MOCVD (not shown) using SiH4, CH4, and H2 gas at 900° C. and 40 Pa, and then a 3C-SiC layer 2a of 50 to 300 nm is formed on both sides of the semiconductor substrate 1 at 1000° C. and 40 Pa. Next, Ga(CH3)3, In, and Ga(CH3)3 are deposited on both sides of the Si wafer (100) surface 1 by MOCVD or MOCVD using remote plasma at 600 to 800° C. and 40 Pa. A 3 to 30 μm GaN buffer layer 3 is formed using (CH3)3, NH3, and H2 gases, and then, as shown in FIG. 3, a 0.3 to 2 μm n-type GaN cladding layer 4 is deposited on both sides of the Si wafer (100) surface 1 at 1000°C by ALD (not shown) or MOCVD (27 Pa) using Ga(CH3)3, In(CH3)3, NH3, H2 gas, and SiH4, and as shown in FIG. 4, an insulating layer 5 of 50 nm is formed on both sides of the Si wafer (100) surface 1 at 625°C and 30 Pa by low-pressure CVD (not shown) using SiH4 and O2 gas.

[0087] Next, as shown in FIG. 5, the insulating layer 5 in the insulating layer etching region 6 for forming the blue micro LED is etched, and as shown in FIG. 6, in the etched region 6, 2 to 6 layers of multiple quantum well layers 7 consisting of GaN barrier layers and InGaN quantum well layers are formed to a thickness of 10 to 100 nm at 1000° C. by the ALD method or the MOCVD method (27 Pa) using Ga(CH3)3, NH3, and H2 gases, and Ga(CH3)3, In(CH3)3, NH3, and H2 gases, respectively.

[0088] Next, as shown in Fig. 7, the insulating layer 8 is formed on both sides of the Si wafer (100) surface 1 by the above-mentioned method to a thickness of 50 nm. Then, as shown in Fig. 8, the insulating films 8 and 5 in the insulating layer etching region 9 for forming the red micro LED are etched, and as shown in Fig. 9, in the etched region, 2 to 6 layers of multiple quantum well layers 13 for red micro LEDs, each consisting of a GaN barrier layer and an AlxInGa(1-x)P quantum well layer, are formed at 1000 ° C. by the ALD method or the MOCVD method (27 Pa) using Ga(CH3)3, NH3, and H2 gas, and Al(CH3)3, In(CH3)3, Ga(CH3)3, PH3, and H2 gas, respectively.

[0089] Next, as shown in Fig. 10, the insulating layer 11 is formed to a thickness of 50 nm on both sides of the Si wafer (100) surface 1 by the above-mentioned method. After that, as shown in Fig. 11, the insulating films 11, 8, and 5 in the insulating layer etching region 12 for forming the green micro LED are etched, and as shown in Fig. 12, in the etched region, 2 to 6 layers of the multi-quantum well layer 13 for the green micro LED, which is composed of a GaN barrier layer and an InGaN quantum well layer, are formed to a thickness of 10 to 100 nm by the ALD method using remote plasma or the MOCVD method (27 Pa) using Ga(CH3)3, NH3, and N2 gases, and Ga(CH3)3, In(CH3)3, NH3, and N2 gases, respectively, at 700 ° C.

[0090] Next, the insulating layers 11 and 8 in the insulating layer etching region 6 for forming the blue micro LED and the insulating layer etching region 9 for forming the red micro LED are etched as shown in FIG. 13. These regions are designated as 14a and 14b, respectively. The insulating layer etching region for forming the green micro LED is designated as 12.

[0091] Next, as shown in FIG. 14, in the blue micro LED region 14a, the red micro LED region 14b, and the green micro LED region 12, a 0.3-2 μm Mg-doped GaN epitaxial layer is formed at 1000° C. by MOCVD (27 Pa) using Ga(CH3)3, NH3, and H2 gases, and the Mg is activated in O2-containing N2 to form a p-type GaN cladding layer 15.

[0092] Next, as shown in FIG. 15, an electrode layer 16 is formed on the p-type GaN cladding layer 15 of the blue micro LED region 14a, the red micro LED region 14b, and the green micro LED region 12, and then the micro LEDs are separated by etching.

[0093] Next, an insulating layer 17 is embedded in the etched regions between the micro LEDs as shown in Fig. 16. By the manufacturing method described above, a large number of light-emitting elements 27, each of which includes a blue micro LED 21, a red micro LED 22, and a green micro LED 23, are formed on the Si wafer (100) surface 1.

[0094] The reason for forming the CVD film on both sides of the Si wafer (100) is to prevent warping of the Si wafer, which is a cause of crystal defects in micro-LEDs. However, the n-type GaN layer, the multi-well layer, and the p-type GaN layer are less susceptible to stress than the 3C-SiC layer and the GaN buffer layer, so they may be formed only on the surface of the Si wafer. (Embodiment 18)

[0095] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 5.

[0096] In this embodiment, unlike the seventeenth embodiment, when forming the multiple quantum well layer, the ALD method is used instead of the MOCVD method (27 Pa), and the multiple quantum well layer 7 for the blue micro LED, the multiple quantum well layer 10 for the red micro LED, and the multiple quantum well layer 13 for the green micro LED are formed at 650 to 750°C using the same gas as in the seventeenth embodiment, and the other manufacturing methods are the same as in the seventeenth embodiment, and a large number of light-emitting elements 27 are formed, each of which is a set of a blue micro LED 21, a red micro LED 22, and a green micro LED 23. (Embodiment 19)

[0097] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 5.

[0098] In this embodiment, unlike the seventeenth embodiment, when forming the multiple quantum well layer, the MOCVD method (27 Pa) using remote plasma is used to form 2 to 6 layers of multiple quantum well layers 7 for blue micro LEDs, each consisting of a GaN barrier layer and an InGaN quantum well layer, with a thickness of 10 to 100 nm, at 800 to 1000° C. using Ga(CH3)3, NH3, and N2 gases, and Ga(CH3)3, In(CH3)3, NH3, and N2 gases, respectively. Also, the multiple quantum well layers 7 for blue micro LEDs, each consisting of a GaN barrier layer and an InGaN quantum well layer, with a thickness of 10 to 100 nm, are formed at 800 to 1000° C. using Ga(CH3)3, NH3, and N2 gases, and Al(CH3) 3, Ga(CH3)3, In(CH3)3, PH3, and He gas are used to form 2 to 6 layers of a multi-quantum well layer 10 for red micro LEDs, which is composed of a GaN barrier layer and an AlxInGa(1-x)P quantum well layer, and 10 to 100 nm thick, and further, Ga(CH3)3, NH3, and N2 gas, and Ga(CH3)3, In(CH3), NH3, and N2 gas are used at 800 to 1000 ° C. to form 2 to 6 layers of a multi-quantum well layer 13 for green micro LEDs, which is composed of a GaN barrier layer and an InGaN quantum well layer, and 10 to 100 nm thick. The other manufacturing methods are the same as those of embodiment 17, and a large number of light-emitting elements 27 are formed, each consisting of a blue micro LED 21, a red micro LED 22, and a green micro LED 23 as a set. (Embodiment 20)

[0099] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 5.

[0100] In this embodiment, unlike the embodiment 19, when forming a multiple quantum well layer, instead of the MOCVD method (27 Pa) using remote plasma, the multiple quantum well layer 7 for a blue micro LED, the multiple quantum well layer 10 for a red micro LED, and the multiple quantum well layer 13 for a green micro LED are formed by the ALD method using remote plasma at 500 to 750°C using the same gas as in the embodiment 19, and the other manufacturing methods are the same as in the embodiment 17, and a large number of light-emitting elements 27 are formed, each of which is a set of a blue micro LED 21, a red micro LED 22, and a green micro LED 23. (Embodiment 21)

[0101] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 6.

[0102] In this embodiment, a blue micro LED multiple quantum well layer 7 is formed on a Si wafer (100) surface 1 in the same manner as in the method described in embodiment 17; a GaN barrier layer and an InGaPN quantum well layer are formed in an insulating layer etching region 9 for forming a red micro LED by MOCVD at 1000°C using Ga(CH3)3, NH3, and H2 gas, and Ga(CH3)3, In(CH3)3, PH3, NH3, and H2 gas, respectively; these are stacked in 2 to 6 layers, 10 to 100 nm, to form a red micro LED multiple quantum well layer 10; then, a green micro LED multiple quantum well layer 13 is formed in the same manner as in embodiment 17; and a 0.3 to 2 μm Mg-doped GaN epitaxial layer is formed on the top of the GaN epitaxial layer by MOCVD at 1000°C using Ga(CH3)3, NH3, Cp2Mg, and H2 gas at 1000°C; Mg is activated in O2-containing N2 to form a p-type GaN cladding layer 15. By the manufacturing method described above, a large number of light emitting elements 27, each of which includes a blue micro LED 21, a red micro LED 22, and a green micro LED 23 as a group, are formed. (Embodiment 22)

[0103] This embodiment is for forming the multiple quantum well layer 7 for a blue micro LED, the multiple quantum well layer 10 for a red micro LED, and the multiple quantum well layer 13 for a green micro LED of claim 6.

[0104] In this embodiment, unlike embodiment 21, when forming a multiple quantum well layer, the same gas as in embodiment 21 is used at 650 to 750°C by the ALD method, and other manufacturing methods are the same as those in embodiment 17, to form a multiple quantum well layer 7 for a blue micro LED, a multiple quantum well layer 10 for a red micro LED, and a multiple quantum well layer 13 for a green micro LED. (Embodiment 23)

[0105] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 6.

[0106] In this embodiment, unlike the embodiment 21, when forming a multiple quantum well layer, a GaN barrier layer and an InGaN quantum well layer are formed in an insulating layer etching region 6 for forming a blue micro LED by MOCVD using a remote plasma at 800 to 1000°C using Ga(CH3)3, NH3, and N2 gases, and Ga(CH3)3, In(CH3)3, NH3, and N2 gases, respectively, and these are stacked in 2 to 6 layers with a thickness of 10 to 100 nm to form a multiple quantum well layer 7 for a blue micro LED. In addition, a GaN barrier layer and an InGaN quantum well layer are stacked in an insulating layer etching region 9 for forming a red micro LED by MOCVD using Ga(CH3)3, NH3, and N2 gases, Also, using Ga(CH3)3, In(CH3)3, PH3, NH3, and N2 gas, a GaN barrier layer and an InGaPN quantum well layer are formed, and these are stacked in 2 to 6 layers, 10 to 100 nm, to form a multi-well layer 10 for red micro LEDs, and further, using Ga(CH3)3, NH3, and N2 gas, and Ga(CH3)3, In(CH3)3, NH3, and N2 gas, respectively, in the insulating layer etching region 12 for forming green micro LEDs, a GaN barrier layer and an InGaN quantum well layer are formed, and these are stacked in 2 to 6 layers, 10 to 100 nm, to form a multi-quantum well layer 13 for green micro LEDs. The other manufacturing methods are the same as those of embodiment 17, and a large number of light-emitting elements 27 are formed, each of which is a set of a blue micro LED 21, a red micro LED 22, and a green micro LED 23. (Embodiment 24)

[0107] This embodiment is for forming the multiple quantum well layer 7 for a blue micro LED, the multiple quantum well layer 10 for a red micro LED, and the multiple quantum well layer 13 for a green micro LED of claim 6.

[0108] In this embodiment, unlike the embodiment 23, when forming a multiple quantum well layer, instead of the MOCVD method using remote plasma, the ALD method using remote plasma is used at 500 to 750°C using the same gas as in the embodiment 23, and the other manufacturing methods are the same as those in the embodiment 17, and the multiple quantum well layer 7 for blue micro LEDs, the multiple quantum well layer 10 for red micro LEDs, and the multiple quantum well layer 13 for green micro LEDs are formed in 2 to 6 layers, each having a thickness of 10 to 100 nm. (Embodiment 25)

[0109] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 7.

[0110] In this embodiment, the blue micro LED 21, the red micro LED 22, and the green micro LED 23 are formed in the same manner as in the methods described in the first to twenty-fourth embodiments, but as shown in FIG. 2b, 1 to 10 layers of 3C-SiC layer 2b are formed at 1000° C. and 0.5 to 5 nm by the ALD method or the MOCVD method (27 Pa). This is to improve the crystallinity of the hexagonal and cubic GaN barrier layers, and to act as a stopper when etching the GaN buffer layer 3 to protect the underlying n-type GaN layer 4. By the manufacturing method described above, a large number of light-emitting elements 27, each of which includes a blue micro LED 21, a red micro LED 22, and a green micro LED 23, are formed on the Si wafer (111) and (100) surfaces. (Embodiment 26)

[0111] This embodiment is for forming a multi-quantum well layer for a blue micro LED, a multi-quantum well layer for a red micro LED, and a multi-quantum well layer for a green micro LED as claimed in claim 8.

[0112] In this embodiment, in embodiments 1 to 25, the number of quantum well layers in the multiple quantum well layer 7 for blue micro LEDs is 3, the number of quantum well layers in the multiple quantum well layer 10 for red micro LEDs is 6, and the number of quantum well layers in the multiple quantum well layer 13 for green micro LEDs is 6, so that compared to the area ratio of blue micro LED (hexagonal InGaN multiple quantum well layer) area: green micro LED (hexagonal InGaN multiple quantum well layer) area: red micro LED (mixed crystal AlInGaP multiple quantum well layer) area = 1:7:3, the area ratio of the green micro LEDs is 4 or less and the area ratio of the red micro LEDs is 2 or less. (Embodiment 27)

[0113] This embodiment is for forming a number of light-emitting elements including a set of blue micro LEDs, red micro LEDs and green micro LEDs as claimed in claim 9.

[0114] In this embodiment, a large number of light-emitting elements 27, each consisting of a blue micro LED 21, a red micro LED 22, and a red micro LED 23 manufactured by the method described in the first to sixteenth embodiments, are used as light-emitting elements for display. (Embodiment 28)

[0115] This embodiment is for forming a number of light-emitting elements including a set of blue micro LEDs, red micro LEDs and green micro LEDs as claimed in claim 10.

[0116] In this embodiment, a number of light-emitting elements 27, each consisting of a blue micro LED 21, a red micro LED 22, and a green micro LED 23 manufactured by the method described in embodiments 17 to 24, are used as light-emitting elements 27 for display. (Embodiment 29)

[0117] This embodiment is for forming a number of light-emitting elements including a set of blue micro LEDs, red micro LEDs, and green micro LEDs as claimed in claim 11.

[0118] In this embodiment, a number of light-emitting elements 27, each consisting of a blue micro LED 21, a red micro LED 22, and a green micro LED 23 manufactured by the method described in embodiment 25, are used as light-emitting elements for display. (Embodiment 30)

[0119] This embodiment is for forming a number of light-emitting elements including a set of blue micro LEDs, red micro LEDs, and green micro LEDs as claimed in claim 12.

[0120] In this embodiment, a number of light-emitting elements 27, each consisting of a blue micro LED 21, a red micro LED 22, and a green micro LED 23 manufactured by the method described in embodiment 26, are used as light-emitting elements for display. (Embodiment 31)

[0121] This embodiment is for forming a display device having a large number of light-emitting elements, each of which is a set of blue micro LEDs, red micro LEDs, and green micro LEDs as claimed in claim 13.

[0122] In this embodiment, a display device 100 is completed using a large number of light-emitting elements 27, each of which includes a blue micro LED 21, a red micro LED 22, and a green micro LED 23 manufactured by the method described in the first to fifth embodiments.

[0123] A Si wafer (111) surface or (100) surface 1 is prepared, on which a large number of light emitting elements 27, each of which includes a blue micro LED 21, a red micro LED 22, and a green micro LED 23 as shown in FIG. 16, are formed.

[0124] Next, the back side of the Si wafer (111) or (100) surface 1 is ground. The area to be searched is indicated by a dotted line in Figure 17. Figure 18 shows the state after grinding.

[0125] Next, as shown in Fig. 19, a light-emitting element block 30 is cut out from the Si wafer (111) or (100) surface 1. Then, as shown in Fig. 20, an alignment mark 18 is provided on the side of the light-emitting element block 30 to be used when transferring the light-emitting element block 30 to the wiring substrate 40.

[0126] Next, the light-emitting element block 30 is turned over as shown in Fig. 21 and transferred to the wiring board 40 shown in Figs. 22a, b, and c. Another wiring board 40 using through via holes is shown in Figs. 23a, b, and c, but the following steps are similar to those of the wiring board 40 shown in Figs. 22a, b, and c. Fig. 24 shows the alignment state of the light-emitting element block 30 and the wiring board 40. Fig. 25 shows the state after the step of transferring the light-emitting element block to the wiring board 40.

[0127] Next, in order to remove the Si wafer 1 as shown in Fig. 26, the surface other than the Si wafer (111) surface or the Si wafer (100) surface 1 is covered with a resist 60 and etched with a wet etching solution. The state after the process of removing the Si wafer (111) surface or the Si wafer (100) surface 1 is shown in Fig. 27.

[0128] Next, a part of the insulating layer 61 at the edge of the light-emitting element block 30 is etched to form upper transparent electrodes 40a, 40b, and 40c on the blue micro LED 21, the red micro LED 22, and the green micro LED 23. The state after this process is shown in Figures 28a and 28b. The upper transparent wirings 40a, b, and c of the light-emitting element block 30 are connected to 50a, b, and c of the wiring board 40, respectively.

[0129] Next, the wiring substrate 40 for mounting light-emitting elements is transferred to the display substrate 80. FIG. 29 shows the display substrate 80. The display substrate 80 has lower wirings 90A, B, C and upper wirings for driving alignment 90a, b, and c. FIG. 30 shows the state after the process of transferring a plurality of wirings for mounting light-emitting elements 40 to the display substrate 80. The light-emitting element is completed by the above manufacturing method. Then, a voltage is applied to the lower wirings 90A, B, C and upper wirings for driving alignment 90a, b, and c to make the blue micro LED 21, red micro LED 22, and green micro LED 23 in each light-emitting element 27 emit light, and the display device 100 functions. [Explanation of symbols]

[0130] 1. Si wafer ((111) or (100) surface, etc.) 2a 3C-SiC layer 2b 3C-SiC layer 3 GaN buffer layer (non-doped or n-type GaN) 4 n-type GaN cladding layer 5. Insulation layer 6. Insulating layer etching area for blue micro LED formation 7. Multiple quantum well layers for blue micro LEDs 8 Insulating Layer 9. Insulating layer etching area for red micro LED formation 10 Multiple quantum well layers for red micro LEDs 11 Insulating layer 12 Insulating layer etching area for green micro LED formation 13 Multiple quantum well layers for green micro LEDs 14a Insulating layer etching area for blue micro LED formation 14b Insulating layer etching area for red micro-LED formation 15 p-type GaN cladding layer 16 Electrode layer 17 Insulating layer (SOG layer) 18 Alignment mark for wiring board 21 Blue Micro LED 22 Red Micro LEDs 23 Green Micro LED 27 Light emitting element 30 Light emitting element block 40 Wiring substrates (Si wafers, or rectangular substrates made from quartz glass, glass, sapphire, plastic, etc.) 40A bottom wiring (Horizontal; Metal wiring or transparent conductive wiring for blue micro LEDs) 40B Bottom wiring (Horizontal; Metal wiring or transparent conductive wiring for red micro LED) 40C Bottom Wiring (Horizontal; Metal wiring and transparent conductive wiring for green micro LEDs) 40a upper wiring (Vertical; transparent conductive wiring for blue micro LEDs) 40b Upper wiring (Vertical; transparent conductive wiring for red micro LEDs) 40c top wiring (Vertical; transparent conductive wiring for green micro LEDs) 41 Through via hole (conductively filled) 50A Alignment and contact wiring for lateral drive wiring (Metal wiring or transparent conductive wiring for blue micro LEDs) 50B Alignment and contact wiring for lateral drive wiring (Metal wiring or transparent conductive wiring for red micro LEDs) 50C Alignment and contact wiring for lateral drive wiring (Metal wiring or transparent conductive wiring for green micro LEDs) 50a Alignment and contact wiring for vertical drive wiring (Metal wiring or transparent conductive wiring for blue micro LEDs) 50b Alignment and contact wiring for vertical drive wiring (Metal wiring or transparent conductive wiring for red micro LEDs) 50c Contact wiring for vertical drive wiring (Metal wiring or transparent conductive wiring for green micro LEDs) 51 Lower Wiring Contact Area (Metal wiring or transparent conductive wiring for blue micro LEDs) 52 Lower Wiring Contact Area (Metal wiring or transparent conductive wiring for red micro LEDs) 53 Lower Wiring Contact Area (Metal wiring or transparent conductive wiring for green micro LEDs) 60 Resist (or organic material, or insulating layer) 61 Insulating layer (SOG) 70 Light-emitting element mounting wiring board (light-emitting element block mounting wiring board) 80 Display board (Quartz glass, glass, plastic substrate, Si, sapphire, etc.) 81 Horizontal drive circuit configuration area 82 Vertical drive circuit configuration area 90A Drive Lower Wiring (Horizontal; Metal wiring or transparent conductive wiring for blue micro LEDs) 90B Lower wiring for drive (Horizontal; Metal wiring or transparent conductive wiring for red micro LED) 90C Drive lower wiring (Horizontal; Metal wiring or transparent conductive wiring for green micro LEDs) 90a Drive alignment and upper wiring (Vertical; Metal wiring or transparent conductive wiring for blue micro LED) 90b Drive alignment and upper wiring (Vertical; Metal wiring or transparent conductive wiring for red micro LED) 90c Drive alignment and upper wiring (Vertical; Metal wiring or transparent conductive wiring for green micro LEDs) 100 display device

Claims

1. A manufacturing method for forming a large number of light-emitting elements each including a set of blue micro LEDs, red micro LEDs, and green micro LEDs, comprising the steps of forming a 3C-SiC layer on a Si (111) surface, forming a GaN buffer layer thereon, and further forming an n-type GaN cladding layer, forming a blue micro LED multiple quantum well layer consisting of a GaN barrier layer and an InGaN quantum well layer on the n-type GaN cladding layer in a blue micro LED region, forming a red micro LED multiple quantum well layer consisting of the GaN barrier layer and an AlxInGa(1-x)P (0≦x≦0.7) quantum well layer on the n-type GaN cladding layer in a red micro LED region, forming a green micro LED multiple quantum well layer consisting of the GaN barrier layer and an InGaN quantum well layer on the n-type GaN layer in a green micro LED region, and then forming a p-type GaN cladding layer in the blue micro LED region, the red micro LED region, and the green micro LED region.

2. A manufacturing method for forming a large number of light-emitting elements each including a blue micro LED, a red micro LED, and a green micro LED, the method comprising the steps of forming a 3C-SiC layer on a Si (111) surface, forming a GaN buffer layer thereon, further forming an n-type GaN cladding layer, forming a blue micro LED multiple quantum well layer consisting of a GaN barrier layer and an InGaN quantum well layer on the n-type GaN cladding layer in a blue micro LED region, forming a red micro LED multiple quantum well layer consisting of the GaN barrier layer and an AlxInGa(1-x)P (0≦x≦0.7) quantum well layer on the n-type GaN cladding layer in a red micro LED region, thereafter forming a green micro LED multiple quantum well layer consisting of the GaN barrier layer and an AlInP quantum well layer on the n-type GaN layer in a green micro LED region, and forming a p-type GaN cladding layer in the blue micro LED region, the red micro LED region, and the green micro LED region.

3. A manufacturing method for forming a large number of light-emitting elements each including the blue micro LED, the red micro LED, and the green micro LED according to claims 1 to 2, comprising a step of forming a multiple quantum well layer for the red micro LED, the multiple quantum well layer being composed of the GaN barrier layer and an InGaPN quantum well layer on the n-type GaN cladding layer in the red micro LED region.

4. A manufacturing method for forming a large number of the light-emitting elements including a set of the blue micro LED, the red micro LED, and the green micro LED according to claims 1 to 3, wherein the barrier layer is changed from GaN to AlGaN.

5. A manufacturing method for forming a large number of light-emitting elements each including a blue micro LED, a red micro LED, and a green micro LED, comprising the steps of forming a 3C-SiC layer on a Si (100) surface, forming the GaN buffer layer thereon, further forming an n-type GaN cladding layer, forming a blue micro LED multiple quantum well layer consisting of a GaN barrier layer and an InGaN quantum well layer on the n-type GaN cladding layer in a blue micro LED region, forming a red micro LED multiple quantum well layer consisting of the GaN barrier layer and an AlxInGa(1-x)P (0≦x≦0.7) quantum well layer on the n-type GaN cladding layer in a red micro LED region, thereafter forming a green micro LED multiple quantum well layer consisting of the GaN barrier layer and an InGaN quantum well layer on the n-type GaN cladding layer in a green micro LED region, and then forming a p-type GaN cladding layer in the blue micro LED region, the red micro LED region, and the green micro LED region.

6. 6. A manufacturing method for forming a large number of light-emitting elements each including the blue micro LED, the red micro LED, and the green micro LED as described in claim 5, comprising a step of forming a multiple quantum well layer for the red micro LED, the multiple quantum well layer being composed of the GaN barrier layer and an InGaPN quantum well layer on the n-type GaN cladding layer in the red micro LED region.

7. A manufacturing method for forming a large number of light-emitting elements each including a set of the blue micro-LED, the red micro-LED, and the green micro-LED of any one of claims 1 to 6, comprising a step of forming the 3C-SiC layer on the n-type GaN buffer layer in the blue micro-LED, red micro-LED, and green micro-LED regions.

8. A manufacturing method for forming a large number of light-emitting elements each including a set of the blue micro-LED, the red micro-LED, and the green micro-LED according to any one of claims 1 to 7, comprising a step of making the number of quantum well layers in the multiple well layer for the blue micro-LED less than the number of quantum well layers in the multiple quantum well layer for the red micro-LED and the number of quantum well layers in the multiple quantum well layer for the green micro-LED in the blue micro-LED, red micro-LED, and green micro-LED regions.

9. The plurality of light-emitting elements, each consisting of a set of the blue micro LED, the red micro LED, and the green micro LED, are manufactured by the manufacturing method according to any one of claims 1 to 4.

10. The multiple light-emitting elements, each consisting of a set of the blue micro LED, the red micro LED, and the green micro LED, are manufactured by the manufacturing method according to any one of claims 5 to 6.

11. The multiple light-emitting elements, which are a set of the blue micro LED, the red micro LED, and the green micro LED, are manufactured by the manufacturing method according to claim 7 .

12. The multiple light-emitting elements, which are a set of the blue micro LED, the red micro LED, and the green micro LED, are manufactured by the manufacturing method according to claim 8 .

13. A display device comprising a large number of light-emitting elements, each of which is a set of the blue micro LED, the red micro LED, and the green micro LED, manufactured by the manufacturing method according to any one of claims 1 to 8.

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