Display device

Abstract

To provide a light-emitting panel in which the occurrence of a crosstalk phenomenon is suppressed, and to provide a method for manufacturing a light-emitting panel in which the occurrence of a crosstalk phenomenon is suppressed.SOLUTION: A light-emitting panel includes a first electrode of one light-emitting element, a first electrode of the other light-emitting element, and an insulating partition which separates the two first electrodes. A portion with a thickness A1 smaller than 1 / 2 of a thickness A0 of a layer containing a light-emitting organic compound, which overlaps with a side surface of the partition, is included. The ratio (B1 / B0) of a thickness B1 of a portion of the second electrode, which overlaps with a side surface of the partition, to a thickness B0 of a portion of the second electrode, which overlaps with the first electrode, is higher than the ratio (A1 / A0).SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a light-emitting panel, a light-emitting device using the light-emitting panel, and a method for manufacturing the light-emitting panel. do. [Background technology]

[0002] The spread of mobile phones, personal computers, smartphones, e-books, etc. has led to The amount of time spent using display devices in daily life is increasing. As a result, these electronic devices are now being used for simple purposes that were previously reserved for paper and stationery. Specifically, the schedule that was previously done using a notebook has become more common. Module management, address books, memos, etc. are now being used with multi-functional electronic devices such as smartphones. This has come to be carried out in this way.

[0003] Many of these electronic devices use display panels in which display elements are arranged in a matrix. Display elements include elements that control the transmission of light (for example, liquid crystal display elements) and elements that reflect light. Elements that control reflection (for example, elements that use electrophoresis) and light-emitting elements that emit light themselves is used.

[0004] In addition, a layer containing a light-emitting organic compound that spreads in a film shape between a pair of electrodes (also called an EL layer) Such a light-emitting element is known as an organic EL element, for example. When a voltage is applied between the pair of electrodes, light is emitted from the layer containing the light-emitting organic compound. Light-emitting devices using organic EL elements for illumination or display are known. An example of such a light emitting device is disclosed in Patent Document 1. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2002-324673 A Summary of the Invention [Problem to be solved by the invention]

[0006] In this specification, a light-emitting panel is a panel in which light-emitting elements are arranged adjacent to each other. Light-emitting elements each having a layer containing a light-emitting organic compound between a pair of electrodes are provided adjacent to each other. The light-emitting panel that uses this technology is called an EL panel. EL panels are being considered for use in lighting devices as well as display devices. is being defeated.

[0007] The multi-color EL panel, in which light-emitting elements that emit light of different colors are arranged in high resolution, is easy to manufacture. For example, it is difficult to use a shadow mask (also called a metal mask) to produce different colors. There is a method for forming light-emitting elements that emit light in a matrix, but It is not suitable for panel production.

[0008] Another method is to use a light emitting device that emits white light and has a color filter overlaid on it. There are known methods for arranging optical modules with high precision. For example, photolithography is used. A plurality of highly precise first electrodes are formed in a matrix using the above method. A layer emitting white light is provided between the first electrode and the second electrode, to form a high definition Then, each of the light-emitting elements is provided with red, green or red light. In the case of the OLED, color filters that transmit blue light or the like are stacked to produce multiple light-emitting devices with different colors. There is a method for making a light emitting panel that includes a light module.

[0009] However, a light-emitting element in which a layer containing a light-emitting organic compound is sandwiched between a first electrode and a second electrode In a light-emitting panel in which light-emitting elements are provided adjacent to each other, the power given to one light-emitting element is not applied to the other adjacent light-emitting elements. The phenomenon whereby light is distributed to a light-emitting element, causing other light-emitting elements to emit light unintentionally (known as crosstalk) This phenomenon is called crosstalk. The display device used cannot display high-definition images. This causes a problem in that light having a desired color cannot be obtained.

[0010] In addition, an insulating partition wall having a reverse tapered cross section is provided between adjacent light emitting elements, The structure in which not only the electrode but also the layer containing a light-emitting organic compound and the second electrode are separated is, for example, The partition is used in a passive matrix type light-emitting panel. In this case, crosstalk can be prevented. When the wall is provided to surround the light emitting element, the second electrode is electrically connected to the adjacent second electrode. The second electrode becomes isolated and power cannot be supplied to the isolated second electrode. The arrangement of the partition walls having a reverse tapered cross section is such that the second electrodes of the adjacent light emitting elements are connected in at least one direction. As a result, in the direction of the adjacent pixels, the second electrodes are , crosstalk may occur.

[0011] One aspect of the present invention has been made in light of this technical background. An object of the present invention is to provide a light-emitting panel in which the occurrence of the crosstalk phenomenon is suppressed. One of the objectives of the present invention is to provide a method for manufacturing a light-emitting panel in which the occurrence of crosstalk is suppressed. Let us assume that. [Means for solving the problem]

[0012] In order to achieve the above object, one aspect of the present invention provides a light-emitting device having a first electrode and a second electrode. The light-emitting panel has a structure in which light-emitting elements each having an organic compound layer sandwiched therebetween are provided adjacent to each other. and an insulating partition wall separating the first electrode of one light-emitting element from the first electrode of the other light-emitting element. The present inventors have focused on a structure in which a layer containing a light-emitting organic compound is sandwiched between the first electrode and the second electrode. A first electrode of one light-emitting element and a second light-emitting element are connected to each other through the layer containing a light-emitting organic compound. We focused on the current flowing through a portion of the second electrode.

[0013] A first electrode is applied to a portion where the layer containing a light-emitting organic compound overlaps with a side surface of the insulating partition wall. The part that includes the part with thickness A1 that is thinner than the thickness A0 of the part in contact with the electrode and overlaps with the side of the partition wall The thickness B1 of the second electrode and the thickness B0 of the second electrode overlapping the first electrode are used to calculate the thickness of the second electrode. We came up with a configuration in which the ratio (B1 / B0) is greater than (A1 / A0), thereby solving the above problem. Preferably, the thickness A1 is less than half the thickness A0.

[0014] That is, one embodiment of the present invention is a light-emitting device in which one light-emitting element and the other light-emitting element are provided adjacent to each other over a substrate. a light-emitting panel in which a first electrode of one light-emitting element and a first electrode of the other light-emitting element are connected to each other; a partition wall separating the two first electrodes; and a partition wall overlapping the two first electrodes and the partition wall. A second electrode and a second electrode sandwiched between the first electrodes and the partition wall. and a layer containing a light-emitting organic compound. In addition, the layer containing a light-emitting organic compound is The part overlapping the side surface of the partition has a thickness A which is smaller than 1 / 2 the thickness A0 of the part overlapping the first electrode. a thickness B1 of the second electrode at a portion including the first portion and overlapping the side surface of the partition wall; The ratio (B1 / B0) calculated from the thickness B0 of the second electrode in the overlapping portion is greater than (A1 / A0). It is a large light-emitting panel.

[0015] The light-emitting panel according to one embodiment of the present invention has a first electrode of one light-emitting element and a second electrode of the other light-emitting element. The device has a first electrode and an insulating partition wall separating the two first electrodes, and contains a light-emitting organic compound. The layer is formed so that the thickness A0 of the portion in contact with the first electrode is smaller than 1 / 2 of the thickness A0 of the portion in contact with the side surface of the partition wall. The thickness B1 of the portion of the second electrode that overlaps with the side surface of the partition wall includes a portion of the thickness A1, and the thickness B1 of the portion of the first electrode that overlaps with the side surface of the partition wall includes a portion of the thickness A2. A configuration in which the ratio (B1 / B0) calculated from the thickness B0 of the part overlapping with the pole is greater than (A1 / A0). In this specification, the thickness of the portion of one layer that overlaps with the side surface of the partition wall is the thickness of the portion of one layer. This refers to the thickness in the direction perpendicular to the side of the partition wall.

[0016] As a result, the light-emitting element overlapping the partition wall provided between one light-emitting element and the other light-emitting element is By reducing the thickness of the layer containing the organic compound, the electrical resistance can be increased, and the light emitting element on one side and the light emitting element on the other side can be prevented from being damaged. It is possible to suppress the current flowing through the layer containing the light-emitting organic compound between the elements. The thickness of the layer containing the conductive organic compound in the portion overlapping the side surface of the partition wall and in contact with the first electrode is The effect is significant in structures that include parts thinner than half of the thickness of the It is possible to provide a light-emitting panel in which the occurrence of the crack phenomenon is suppressed.

[0017] In one embodiment of the present invention, the insulating partition wall forms an angle of 55° to 100° with respect to the substrate. The light-emitting panel has a side surface.

[0018] In the light-emitting panel according to one embodiment of the present invention, a layer containing a light-emitting organic compound overlaps with a side surface of the partition wall. The thickness of the portion can be made thinner than half the thickness A0 of the portion in contact with the first electrode. A region with suppressed electrical conductivity is formed in a portion where the layer containing a light-emitting organic compound overlaps with a side surface of the partition wall. A layer containing a light-emitting organic compound is formed between one light-emitting element and the other light-emitting element. As a result, a light-emitting panel with reduced crosstalk can be provided. Can be provided.

[0019] In one embodiment of the present invention, a portion of the second electrode overlapping with a side surface of the partition wall has a thickness smaller than that of the first electrode. The light-emitting panel includes a portion that is thicker than the portion that overlaps the pole.

[0020] In the light-emitting panel according to one embodiment of the present invention, the second electrode has a thick portion in a portion overlapping with the partition wall. As a result, a region with enhanced electrical conductivity is formed in the area overlapping with the partition wall, and a planar This has the effect of increasing the conductivity of the second electrode extending over the entire surface of the substrate, i.e., acts as a so-called auxiliary wiring. As a result, the voltage drop caused by the electrical resistance of the second electrode is suppressed, and the phenomenon of non-uniform current flow is eliminated. It is possible to provide a light-emitting panel that can prevent this and obtain uniform light emission.

[0021] Another embodiment of the present invention is a method for producing a substance having a high hole-transporting property and a method for producing a compound having a high hole-transporting property. A light-emitting organic compound having a charge generating region containing an acceptor material and a light-emitting unit. The charge generating region is disposed between the light emitting unit and the first electrode. The light-emitting panel is as described above.

[0022] The light-emitting panel of one embodiment of the present invention includes a substance having a high hole-transport property and a light-emitting layer having a high hole-transport property. The charge generating region includes a charge acceptor material. The thickness of the part that overlaps with the surface is thin. This suppresses the conductivity and allows the charge generation area to be By this, a current flowing between the first electrode of one light-emitting element and the light-emitting unit of the other light-emitting element is suppressed. As a result, it is possible to provide a light-emitting panel in which the occurrence of the crosstalk phenomenon is suppressed.

[0023] Another embodiment of the present invention is a method for producing a material having a high electron-transporting property and a method for producing the material having a high electron-transporting property. A light-emitting organic compound comprising an electron injection buffer containing a donor substance and a light-emitting unit. The electron injection buffer is disposed between the light-emitting unit and the first electrode. The light-emitting panel described above.

[0024] The light-emitting panel according to one embodiment of the present invention includes a substance having a high electron-transport property and a light-emitting layer having the high electron-transport property. The electron injection buffer includes a donor substance for the substrate. The thickness of the portion overlapping the side surface of the partition wall is thin. This suppresses the conductivity, and the electron injection Between the first electrode of one light-emitting element and the light-emitting unit of the other light-emitting element via a buffer This allows the current flow to be suppressed, resulting in a light-emitting panel with reduced crosstalk. We can provide it.

[0025] In addition, one embodiment of the present invention is a liquid crystal display device including a plurality of light-emitting units and an intermediate layer sandwiched between the light-emitting units. The intermediate layer is a layer including a material having high electron transport properties and the material having high electron transport properties. The light-emitting panel according to the present invention further comprises an electron injection buffer containing a donor substance for a highly reactive substance. It is.

[0026] The light-emitting panel according to one embodiment of the present invention includes an intermediate layer sandwiched between light-emitting units, The present invention relates to an electron injection method comprising the steps of: The buffer is provided. This allows the side of the partition wall of the electron injection buffer provided in one intermediate layer to be The thickness of the area overlapping the surface is thinned, suppressing electrical conductivity, so the electron injection layer in the middle layer Between the first electrode of one light-emitting element and the light-emitting unit of the other light-emitting element via an input buffer As a result, the occurrence of crosstalk is suppressed in the light-emitting panel. can be provided.

[0027] Another embodiment of the present invention is a light-emitting device including the above-described light-emitting panel.

[0028] In the light-emitting device according to one embodiment of the present invention, a first electrode of one light-emitting element and a second electrode of the other light-emitting element are a first electrode, a partition wall separating the two first electrodes, and the two first electrodes and the partition wall a light-emitting organic compound sandwiched between the first and second electrodes in contact with each other; In addition, the layer containing a light-emitting organic compound has a thickness of 100 nm at a portion where the layer is in contact with the first electrode. The portion having a thickness A1 smaller than 1 / 2 of the thickness A0 overlaps with the side surface of the partition wall, and the second electrode The thickness B1 of the part of the electrode that overlaps with the side of the partition wall, and the thickness of the part of the second electrode that overlaps with the first electrode The ratio (B1 / B0) calculated from B0 is greater than (A1 / A0), and crosstalk is As a result, the occurrence of crosstalk is suppressed. An optical device can be provided.

[0029] In one embodiment of the present invention, two adjacent first electrodes are provided on a substrate, and the first electrodes are arranged at an angle of 55° or more with respect to the substrate. An insulating partition wall having sides that form an angle of 100° or less and that separates the two first electrodes; The first step is to form a film by a deposition method having a directional property of depositing in a direction perpendicular to the substrate. When forming a layer containing a light-emitting organic compound, the side of the partition wall of the layer containing a light-emitting organic compound is The thickness A1 of the portion overlapping the first electrode of the layer including the light-emitting organic compound is The second step is to form the film so that the thickness is less than 1 / 2 of A0, and to deposit the film on the side of the partition wall. When forming the second electrode by using a film forming method, the thickness of the portion of the second electrode that overlaps with the first electrode is The ratio (B1 / B0) of the thickness B1 of the portion of the second electrode overlapping the side surface of the partition wall to the thickness B0 is , and a third step of forming the light-emitting panel so that the difference is greater than (A1 / A0). This is a method for producing the above.

[0030] According to the method for manufacturing a light-emitting panel of one embodiment of the present invention, two first electrodes and two first electrodes The layer containing the light-emitting organic compound can be formed on the insulating partition wall that separates the electrodes. The part overlapping the side of the wall has a thickness A1 which is smaller than 1 / 2 the thickness A0 of the part overlapping the first electrode. In addition, the thickness B1 of the portion of the second electrode that overlaps with the side surface of the partition wall and the thickness B2 of the first electrode can be formed. The ratio (B1 / B0) calculated from the thickness B0 of the part overlapping with the electrode must be greater than (A1 / A0). Cut.

[0031] As a result, the light-emitting element overlapping the partition wall provided between one light-emitting element and the other light-emitting element is By reducing the thickness of the layer containing the organic compound, the luminescent layer between one light-emitting element and the other light-emitting element is This suppresses the current flowing through the layer containing the organic compound. As a result, the occurrence of crosstalk is reduced. A method for producing a suppressed light emitting panel can be provided.

[0032] In this specification, the EL layer refers to a layer provided between a pair of electrodes of a light-emitting element. Therefore, the light-emitting layer containing an organic compound, which is a light-emitting material, sandwiched between the electrodes is one of the EL layers. This is an embodiment.

[0033] In this specification, in a layer containing a light-emitting organic compound sandwiched between a pair of electrodes, A layer or stack that includes one region where electrons and holes recombine is called an emitting unit.

[0034] In the present specification, the present invention relates to a method for producing a charge generating layer, the method comprising the steps of: generating a charge in a layer adjacent to the cathode; The layer that injects electrons into the layer adjacent to the anode side is called the intermediate layer. When the compound-containing layer has a plurality of light-emitting units, an intermediate layer is provided between the light-emitting units. can be done.

[0035] In addition, in the present specification, when a substance A is dispersed in a matrix made of another substance B, The substance B that constitutes the trix is ​​called the host material, and the substance A that is dispersed in the matrix is ​​called the guest material. In addition, each of Substance A and Substance B may be a single substance. It may be a mixture of two or more substances.

[0036] In this specification, the term "light-emitting device" refers to an image display device, a light-emitting device, or a light Also, the light emitting device is connected to a connector, such as FPC (Flexib le printed circuit) or TAB (Tape Automate d Bonding) tape or TCP (Tape Carrier Packag e) is attached to the module, the printed wiring board is attached to the end of the TAB tape or TCP. A module with a COG (Chip On Glass) s) All modules in which an IC (integrated circuit) is directly mounted using this method are included in the light-emitting device. Let us assume that. Effect of the Invention

[0037] According to one aspect of the present invention, it is possible to provide a light-emitting panel in which the occurrence of crosstalk is suppressed. Alternatively, a method for manufacturing a light-emitting panel in which the occurrence of crosstalk is suppressed can be provided. [Brief description of the drawings]

[0038] [Figure 1] 1A to 1C are diagrams illustrating a structure of a light-emitting panel according to an embodiment. [Diagram 2] 1A to 1C are diagrams illustrating a structure of a light-emitting panel according to an embodiment. [Diagram 3] 1A to 1C illustrate a method for manufacturing a light-emitting panel according to an embodiment. [Figure 4] 1A to 1C illustrate a method for manufacturing a light-emitting panel according to an embodiment. [Diagram 5] 1A to 1C illustrate a structure of a light-emitting element according to an embodiment. [Figure 6] 1A to 1C illustrate a structure of a light-emitting device according to an embodiment. [Figure 7] 1A to 1C illustrate a structure of a light-emitting device according to an embodiment. [Figure 8] 1A and 1B are diagrams illustrating a configuration of a light-emitting panel according to an embodiment. [Figure 9] 5A and 5B are diagrams illustrating the light-emitting states of a light-emitting panel according to an example and a comparative panel according to a comparative example. [Figure 10] 5A and 5B are diagrams illustrating the light-emitting states of a light-emitting panel according to an example and a comparative panel according to a comparative example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0039] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention may be modified in various ways in form and detail without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be modified in various ways. In addition, the present invention is not limited to the above embodiment. In the drawings, the same reference numerals are used to designate the same parts or parts having similar functions. The repeated explanation will be omitted.

[0040] (Embodiment 1) In this embodiment, the thickness A1 of the layer containing the light-emitting organic compound in the portion overlapping the side surface of the partition wall is , thinner than 1 / 2 of the thickness A0 of the layer including the light-emitting organic compound in contact with the first electrode, The thickness B1 of the second electrode at the portion overlapping the side surface of the partition wall and the thickness B2 of the second electrode at the portion overlapping the first electrode are Light emission with a structure in which the ratio (B1 / B0) calculated from the pole thickness B0 is greater than (A1 / A0) The panel will be described with reference to FIG. 1 and FIG. 2. Specifically, the panel can be applied to a display device. The EL panel will be explained.

[0041] The structure of an EL panel according to one embodiment of the present invention is shown in FIG. 1. FIG. 1(A) shows an EL panel according to one embodiment of the present invention. FIG. 1(B) is a top view of the panel 190, and FIG. 1(B) is a cross-sectional view taken along line JK in FIG. 1(A). do.

[0042] The EL panel 190 illustrated in FIG. 1A includes a light-emitting element 150a on one side and a light-emitting element 150b on the other side. 1B, a partition wall 140 is provided between the EL panel 190 and the EL panel 50b. The light emitting element 150a and the other light emitting element 150b are disposed on the insulating layer 107 of the substrate 100. Furthermore, the EL panel 190 has a second electrode and one of the light-emitting elements 150a and 150b. The first electrode 151a of the light-emitting element 150a is sandwiched between the first electrode 151b of the other light-emitting element 150b. It has a layer 153 containing a light-emitting organic compound.

[0043] One light-emitting element 150a has a first electrode 151a, a part 152a of a second electrode, and a light-emitting The other light-emitting element 150b has a first light-emitting element 153a and a second light-emitting element 153b. An electrode 151b, a portion 152b of the second electrode, and a portion of the layer containing a light-emitting organic compound 153b.

[0044] The first electrodes 151a and 151b are formed on an island-shaped conductive layer 107. and the electrode 106a or the electrode 106b provided between the substrate 100 and the insulating layer 107. The light emitting element 150a and the light emitting element 150b are electrically connected to each other. The structure of an applicable light-emitting element will be described in detail in Embodiment 3.

[0045] The partition wall 140 covers the ends of the first electrodes 151a and 151b and The partition wall 140 has an opening overlapping with the first electrode 151a and an opening overlapping with the first electrode 151b. The partition wall 140 has an angle θ with respect to the substrate 100. The end of the partition wall 140 is also formed at an angle smaller than the angle θ. When the partition wall 140 is formed so as to contact the first electrode 151a, the first electrode 15 This is preferable since it is possible to prevent a short circuit between 1a and the second electrode 152a.

[0046] The partition 140 is insulating and is made of an organic insulating material or an inorganic insulating material, particularly a photosensitive resin. The use of such a material is preferred because it is easy to adjust the angle of the side surface of the opening formed on the first electrode. I wish.

[0047] A portion 153c of the layer containing a light-emitting organic compound is formed on the side surface of the partition wall 140, and the light-emitting A portion 152c of the second electrode is formed on a portion 153c of the layer containing a conductive organic compound. is.

[0048] The portion 152c of the second electrode formed on the partition wall 140 corresponds to the first electrode of one of the light emitting elements 150a. A portion 152a of the second electrode of the other light-emitting element 150b is connected to a portion 152b of the second electrode of the other light-emitting element 150b. Electrically connected.

[0049] The thickness of the portion 153c of the layer including the light-emitting organic compound formed on the side surface of the partition wall 140 is Since the layer containing the light-emitting organic compound is thinner than the other portions, the electrical resistance of the layer containing the light-emitting organic compound is The area of ​​high electrical resistance is formed along the side of the partition wall 140. Therefore, one light-emitting element and the other light-emitting element are connected via the layer 153c containing a light-emitting organic compound. As a result, the occurrence of crosstalk is suppressed. We can provide you with a panel.

[0050] The form of the partition wall having different angles of the side surface according to one embodiment of the present invention is shown in FIG. Each of the partitions is described below.

[0051] <Bulkhead shape 1.> A partition wall according to one embodiment of the present invention is shown in FIG. The first electrode 151a of the light emitting element 150a on one side and the first electrode 151b of the light emitting element 150b on the other side are 51b and has an opening overlapping with the first electrode 151a and a second opening overlapping with the first electrode 151b. The side surface of the partition wall 140a is at an angle of 55° to 100° with respect to the substrate 100. θ 2 , which is approximately 65° in length. a has.

[0052] The thickness A1 of the layer 153 containing a light-emitting organic compound at the portion overlapping the side surface of the partition wall 140a is 1 / 2 of the thickness A0 of the layer 153 containing a light-emitting organic compound in contact with the first electrode 151a It is thinner than.

[0053] In addition, the thickness B1 of the second electrode 152 at the portion overlapping the side surface of the partition wall 140a and the thickness B2 of the first electrode 15 The ratio (B1 / B0) calculated from the thickness B0 of the second electrode 152 at the portion overlapping with 1a is (A1 / A0), and the second electrodes of the light emitting element 150a and the light emitting element 150b are The portions are electrically connected to each other via a portion of the second electrode formed on the side surface of the partition wall 140a. Connected.

[0054] With the above configuration, the light emitting element 150a on one side and the light emitting element 150b on the other side are The thickness of the layer 153 containing the light-emitting organic compound in the portion overlapping the side surface of the partition wall 140a is reduced. In this case, the electrical resistance can be increased, and the light emitting element between the light emitting element 150a on one side and the light emitting element 150b on the other side can be prevented from being damaged. The current flowing through the layer 153 containing the photosensitive organic compound can be suppressed. As a result, the crosstalk phenomenon can be reduced. In addition, the second electrode 152 extending in a planar shape can be used to provide a light-emitting panel in which the occurrence of an image defect is suppressed. Since the light emitting element 150a on one side and the light emitting element 150b on the other side are electrically connected, By selecting the electrodes and applying a voltage to each of the electrodes, each of the light emitting elements can be driven.

[0055] <Bulkhead shape 2.> The partition wall according to one embodiment of the present invention is shown in FIG. 2(B). The partition wall 140b shown in FIG. The first electrode 151a of the light emitting element 150a on one side and the first electrode 151b of the light emitting element 150b on the other side are 51b and has an opening overlapping with the first electrode 151a and a second opening overlapping with the first electrode 151b. The side surface of the partition wall 140b is at an angle of 55° to 100° with respect to the substrate 100. θ b has.

[0056] Since the layer containing the light-emitting organic compound is not formed on the side surface of the partition wall 140b, one of the light-emitting elements The layer 153a containing a light-emitting organic compound of the light-emitting element 150a and the layer 153b containing a light-emitting organic compound of the other light-emitting element 150b The layer 153b containing an organic compound is divided by a partition wall 140b.

[0057] A second electrode 152 is formed on the portion overlapping the side surface of the partition wall 140b. A part of the second electrode of the other light emitting element 150a and the other light emitting element 150b is formed on the side surface of the partition wall 140b. The second electrode is electrically connected to the first electrode through a portion of the second electrode.

[0058] This suppresses the current flowing between the light emitting element 150a on one side and the light emitting element 150b on the other side. As a result, it is possible to provide a light-emitting panel in which the occurrence of the crosstalk phenomenon is suppressed. A second electrode 152 extending in a planar shape connects the light emitting element 150a on one side and the light emitting element 150b on the other side. Since they are electrically connected, by selecting the first electrode and applying a voltage, It is possible to drive the light emitting element.

[0059] <Bulkhead shape 3.> A partition wall according to one embodiment of the present invention is shown in FIG. The first electrode 151a of the light emitting element 150a on one side and the first electrode 151b of the light emitting element 150b on the other side are 51b and has an opening overlapping with the first electrode 151a and a second opening overlapping with the first electrode 151b. The side surface of the partition wall 140c is at an angle of 55° to 100° with respect to the substrate 100. θ c In addition, as shown in FIG. In this way, a portion between the legs of the partition wall 140c and its upper portion is narrower than the width of the upper portion and the width of the legs. By providing the insulating layer, it is possible to prevent the first electrode and the second electrode from being short-circuited, which is preferable.

[0060] Since the layer containing the light-emitting organic compound is not formed on the side surface of the partition wall 140c, one of the light-emitting elements The layer 153a containing a light-emitting organic compound of the light-emitting element 150a and the layer 153b containing a light-emitting organic compound of the other light-emitting element 150b The layer 153b containing an organic compound is divided by a partition wall 140c.

[0061] A second electrode 152 is formed at a portion overlapping the side surface of the partition wall 140c. A part of the second electrode of the other light emitting element 150a and the other light emitting element 150b is formed on the side surface of the partition wall 140c. The second electrode is electrically connected to the first electrode through a portion of the second electrode.

[0062] This suppresses the current flowing between the light emitting element 150a on one side and the light emitting element 150b on the other side. As a result, it is possible to provide a light-emitting panel in which the occurrence of the crosstalk phenomenon is suppressed. A second electrode 152 extending in a planar shape connects the light emitting element 150a on one side and the light emitting element 150b on the other side. Since they are electrically connected, by selecting the first electrode and applying a voltage, It is possible to drive the light emitting element.

[0063] The light-emitting panel according to one embodiment of the present invention has a first electrode of one light-emitting element and a second electrode of the other light-emitting element. The insulating partition wall separates the first electrodes from each other. The thickness A1 of the layer containing the light-emitting organic compound in the portion in contact with the first electrode is The thickness of the second electrode is less than 1 / 2 of the thickness A0 of the layer containing the organic compound and overlaps with the side of the partition wall. The ratio (B1 / B0) of the thickness B1 to the thickness B0 of the second electrode at the portion overlapping the first electrode is ) is greater than (A1 / A0).

[0064] As a result, the light-emitting element overlaps the side surface of the partition wall provided between one light-emitting element and the other light-emitting element. By reducing the thickness of the layer containing the conductive organic compound, the electrical resistance can be increased, and the electrical resistance of one light-emitting element and the other light-emitting element can be increased. In particular, the current flowing through the layer containing the light-emitting organic compound between the light-emitting elements can be suppressed. The thickness of the layer including the light-emitting organic compound in the portion overlapping the side surface of the wall is 1 / 100th of the thickness of the layer including the light-emitting organic compound in the portion in contact with the first electrode. When the thickness of the layer containing the light-emitting organic compound is less than half, the effect becomes significant. As a result, it is possible to provide a light-emitting panel in which the occurrence of the crosstalk phenomenon is suppressed.

[0065] Note that a light-emitting panel in which light-emitting elements are arranged at close intervals has a high aperture ratio, while a light-emitting panel in which the aperture ratio is low has a high aperture ratio. In comparison with the conventional method, the driving voltage can be reduced, and therefore the power consumption can be reduced. When a light-emitting panel arranged in this way is used in a display device, it becomes possible to display high-definition images. However, the smaller the distance between one light-emitting element and the other light-emitting element, the greater the crosstalk. This phenomenon is more likely to occur. In other words, the higher the aperture ratio of the light-emitting panel or the higher the resolution of the light-emitting panel, the more likely the black Specifically, when the distance between adjacent light-emitting elements is 7 μm or less, This is more likely to occur when the image contains more than 350 pixels per inch (horizontal resolution is 35 0 ppi (pixels per inch), crosstalk is more likely to occur. This is particularly noticeable at 400 ppi or more.

[0066] The light-emitting panel according to one embodiment of the present invention is a light-emitting panel having such a high aperture ratio and a light-emitting panel having high resolution. The occurrence of the crosstalk phenomenon can be suppressed even in the case of a semiconductor device. It can be appropriately combined with other embodiments shown in .

[0067] (Embodiment 2) In this embodiment, the thickness A1 of the layer containing the light-emitting organic compound in the portion overlapping the side surface of the partition wall is , thinner than 1 / 2 of the thickness A0 of the layer including the light-emitting organic compound in contact with the first electrode, The thickness B1 of the second electrode at the portion overlapping the side surface of the partition wall and the thickness B2 of the second electrode at the portion overlapping the first electrode are Light emission with a structure in which the ratio (B1 / B0) calculated from the pole thickness B0 is greater than (A1 / A0) The method for producing the panel will be described with reference to FIG.

[0068] <First step> A wiring layer including the electrode 106a is formed on the insulating surface of the substrate 100, and the wiring including the electrode 106a is An insulating layer 107 is then formed on the insulating layer 107. An opening is then formed in the insulating layer 107, reaching the electrode 106a. Then, a conductive film that will be a first electrode is formed and electrically connected to the electrode 106a. The conductive film is processed into an island shape to form the first electrodes 151a and 151b.

[0069] Next, an insulating partition wall 140a is formed. The partition wall 140a is formed to separate the first electrode 151a and the first An opening portion covers an end portion of the first electrode 151b and overlaps with the first electrode 151a, and The partition wall 140a is formed so as to have an opening overlapping with the opening b. The angle θ is set to be equal to or greater than 55° and equal to or less than 100°.

[0070] As a method for adjusting the angle θ of the side surface of the partition wall 140a, for example, a positive photoresist is used. By appropriately adjusting the exposure conditions of the positive photoresist, the angle can be increased to 55° or more. The side angle θ can be adjusted within a range of 90° or less to form the partition wall.

[0071] Alternatively, a negative photoresist can be used and the mask gap can be adjusted accordingly. By adjusting the side angle θ within the range of approximately 90° to 100°, a partition wall is formed. can.

[0072] The method for adjusting the angle θ of the side surface of the insulating partition wall 140a is not limited to the above. Known methods such as etching and ashing can be applied alone or in combination (Figure 3). (See (A)).

[0073] <Second step> Next, a layer 153 containing a light-emitting organic compound is formed on the first electrode 1 of one of the light-emitting elements 150a. 51a and the first electrode 151b of the other light emitting element 150b and the insulating partition wall 140a. The first electrode is formed in contact with the first portion. A layer 153 containing a light-emitting organic compound is formed by a deposition method 191. When a film forming method 191 is used, which deposits the film in a direction perpendicular to the surface of the partition wall, the film is deposited on the side of the partition wall. Therefore, the film can be preferentially formed on the surface of the first electrode.

[0074] As a method for forming a film having a directional property of depositing in a direction perpendicular to the first electrode, The deposition rate on the plane perpendicular to the surface of the first electrode is 1 / The deposition method has a deposition directionality of 10 or less. An example of the film forming method 191 is a resistance heating method.

[0075] The side surface of the insulating partition wall 140a is at an angle θ of 55° to 100° with respect to the substrate 100. Therefore, the film deposition method 19 has a directivity of depositing in a vertical direction on the first electrode 151a. When the layer 153 containing a light-emitting organic compound is formed using the organic compound 1, the layer 153 overlaps the side surface of the partition wall 140a. The thickness A1 of the layer 153 containing a light-emitting organic compound in the portion in contact with the first electrode 151a is The thickness A0 of the layer 153 containing the light-emitting organic compound in the portion is thinner than 1 / 2 of the thickness A0 (see FIG. 3(B)). see).

[0076] As a result, the partition wall 1 provided between the light emitting element 150a on one side and the light emitting element 150b on the other side The thickness of the layer 153 including the light-emitting organic compound in the portion overlapping the side surface of 40a is reduced, and the electrical resistance Since the resistance can be increased, the light emitting element between one light emitting element 150a and the other light emitting element 150b can be prevented from being damaged. As a result, the crosstalk phenomenon can be prevented. It is possible to provide a light-emitting panel in which the occurrence of

[0077] <Third step> Next, the second electrode 152 is formed. The second electrode 152 is a first electrode 151a. a layer including a light-emitting organic compound and overlapping the electrode 151b and the insulating partition wall 140a; The second electrode 152 is formed so as to be in contact with the second electrode 153. Note that the second electrode 152 contains a light-emitting organic compound. A film forming method that deposits at a sufficient rate not only on the layer 153 but also on the side of the insulating partition wall 140a. The method 192 is used. When the film forming method 192 is used, which deposits the insulating film on the side surface of the insulating partition wall 140a, A second electrode 152 is also formed on the side surface of the partition wall 140a. The second electrodes of the light emitting elements 150b can be electrically connected.

[0078] As a film forming method 192 for depositing on the side surface of the insulating partition wall 140a, The deposition rate on a plane perpendicular to the substrate is compared to the deposition rate on a surface parallel to the substrate. A film forming method in which the ratio of the deposition rates is 1 / 2 or more and 1 or less is preferred. In this case, it becomes difficult to increase the thickness of the second electrode in the portion overlapping the side surface of the partition wall. If the thickness is too large, the deposition rate of the second electrode overlapping the first electrode will be slow. As a deposition method 192 for depositing on the side of a, a sputtering method is given as an example. (See Figure 3(C)).

[0079] The second electrode 15 is formed by using a film forming method 192 that also deposits on the side surface of the insulating partition wall 140a. When the second electrode 2 is formed, the thickness B1 of the second electrode at the portion overlapping the side surface of the partition wall 140a and the thickness B2 of the first electrode 2 are The ratio (B1 / B0) calculated from the thickness B0 of the second electrode at the part where the first electrode overlaps the second electrode is less than (A1 / A0). As a result, the light-emitting organic compound in the portion overlapping the side surface of the partition wall 140a can be made larger. The thickness of the layer 153 is made thin to increase the electrical resistance while maintaining the electrical connection between the light emitting element 150a and the other light emitting element. The second electrode of the other light emitting element 150b can be electrically connected.

[0080] <Modification of the method for producing the light-emitting panel> A modified example of the method for manufacturing a light-emitting panel according to one embodiment of the present invention will be described with reference to FIG.

[0081] In the first step described above, the side surface of the insulating partition wall 140a is inclined at 55° to the substrate 100. The angle θ is set to 100° or less.

[0082] Next, the layer 153 containing a light-emitting organic compound is formed by the second step described above. As a result, the partition wall 1 provided between the light emitting element 150a on one side and the light emitting element 150b on the other side The thickness of the layer 153 including the light-emitting organic compound in the portion overlapping the side surface of 40a is reduced, and the electrical resistance By increasing the thickness of the light-emitting organic layer between the light-emitting element 150a and the light-emitting element 150b, The current flowing through the compound-containing layer 153 can be suppressed. As a result, the occurrence of the crosstalk phenomenon is reduced. It is possible to provide a suppressed light emitting panel.

[0083] Next, in the third step of this modification, the second electrode 152 is attached to the insulating partition wall 140. A film is formed on the side surface of a by using a film forming method 193 having a directivity for depositing in a vertical direction.

[0084] For example, a second electrode having a thickness of B1 is provided on one side of the partition wall that forms an angle θ of 60° with respect to the substrate. When the electrodes are deposited, the thickness B0 of the second electrode on the first electrode is B1 × cos60°, and B 1 (see FIG. 4(C)). When the metal is directed toward the side of the partition, it can be preferentially deposited on the side of the partition.

[0085] In this modification, a directional film forming method 193 is used to form a film on one side (the left side) of the partition wall 140a. Then, a film is formed on the surface (see FIG. 4(A)). A film is formed on the other (right) side surface of the wall 140a (see FIG. 4(B)). The dotted lines in 52 indicate the portions formed using the film forming method 193. Therefore, the second electrode 152 can be deposited on both sides of the partition wall 140a preferentially over the first electrode. do.

[0086] In addition, when the side surface of the partition wall has an angle θ of 60° with respect to the substrate, if a film is formed on both sides, The thickness B0 of the second electrode 152 on the first electrode 151a or the first electrode 151b is This is approximately equal to the thickness B1 of the overlapping portion.

[0087] The side surface of the insulating partition wall 140a is oriented at an angle greater than 60° and smaller than 90° with respect to the substrate 100. The film is deposited in a direction perpendicular to the side surface at an angle θ. When the second electrode is formed by the above-mentioned method, the second electrode overlapping the side surface of the partition wall 140a is treated as the first electrode. The film can be formed thicker than the overlapping areas.

[0088] In the light-emitting panel according to one embodiment of the present invention, the thickness of the second electrode in the portion overlapping with the side surface of the partition wall is This provides a region with enhanced electrical conductivity in the portion of the second electrode that overlaps with the side surface of the partition wall. The effect of increasing the conductivity of the second electrode, which spreads out in a planar shape, is that of acting as an auxiliary wiring. As a result, the voltage drop caused by the electrical resistance of the second electrode is suppressed, and the current is insufficient. It is possible to provide a light-emitting panel that prevents the phenomenon of uniform flow and provides uniform light emission.

[0089] According to the method for manufacturing a light-emitting panel of one embodiment of the present invention, a first electrode of one light-emitting element and An insulating partition wall can be formed between the first electrode of the other light emitting element and the two first electrodes. The thickness A1 of the layer including the light-emitting organic compound in the portion overlapping the side surface of the partition wall is set to be equal to or larger than the first thickness A1. The thickness of the layer including the light-emitting organic compound in the portion in contact with the electrode can be made thinner than 1 / 2 of the thickness A0. In addition, the thickness B1 of the second electrode at the portion overlapping the side surface of the partition wall and the thickness B2 of the first electrode at the portion overlapping the first electrode are The ratio (B1 / B0) calculated from the thickness B0 of the second electrode can be made larger than (A1 / A0).

[0090] As a result, the portion overlapping the side surface of the partition wall provided between one light emitting element and the other light emitting element The thickness of the layer containing the light-emitting organic compound can be reduced to increase the electrical resistance. In particular, the current flowing through the layer containing the light-emitting organic compound between the light-emitting element and the other light-emitting element can be suppressed. The thickness of the layer including the light-emitting organic compound in the portion overlapping the side surface of the partition wall is set to be equal to or larger than the thickness of the layer including the light-emitting organic compound in the portion in contact with the first electrode. When the thickness of the layer containing the light-emitting organic compound in the portion is less than half, the effect becomes significant. As a result, a method for manufacturing a light-emitting panel in which the occurrence of crosstalk is suppressed can be provided. .

[0091] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. .

[0092] (Embodiment 3) A light-emitting panel according to one embodiment of the present invention can include layers containing light-emitting organic compounds having various structures. In this embodiment, a pair of light-emitting diodes that can be used for a light-emitting panel according to one embodiment of the present invention is described. An example of the configuration of a layer containing a light-emitting organic compound sandwiched between the electrodes will be described with reference to FIG. Reveal.

[0093] In the layer including the light-emitting organic compound described in this embodiment, particularly, The layer that is likely to be a region with low resistance is a layer that is made of a substance having high hole transport properties and a material having high resistance to the substance having high hole transport properties. A charge generating layer containing an acceptor material and / or a material having high electron transport properties and the electron transport layer. The electron injection buffer contains a donor material for the highly transporting material. Contains a substance that generates carriers (specifically, an acceptor substance or a donor substance) This is because the electrical resistance is reduced.

[0094] Even if the first electrode of one light-emitting element and the first electrode of the other light-emitting element are separated from each other, The layer having such a reduced electrical resistance is provided on the first electrode side of the light-emitting unit. and a light emitting element having a first electrode and a second electrode is electrically connected to the first electrode of the light emitting element through the layer having a reduced electrical resistance. A current flows from the first electrode of one light-emitting element to the second light-emitting element, or from the first electrode of the other light-emitting element to the first light-emitting element, forming a crosstalk. A problem occurs.

[0095] Therefore, in one embodiment of the present invention, a partition provided between one light-emitting element and the other light-emitting element A substance having high hole transport properties in a portion overlapping the side surface and an acceptor for the substance having high hole transport properties A charge generating layer including a highly conductive material and / or a material having high electron transport properties and a highly conductive layer including the highly conductive material. The thickness of the electron injection buffer containing the donor substance for the substance may be thinner than the other portions. By adopting such a configuration, the charge generating layer and the electron injection buffer are The electrical resistance of the layer between the light emitting elements can be increased. This suppresses the current flowing through the layer containing the photosensitive organic compound, which results in the occurrence of crosstalk. It is possible to provide a light-emitting panel with reduced emission.

[0096] In addition, the thickness of the region with low electrical resistance, represented by the charge generation layer and the electron injection buffer, is Specifically, the thickness of the region with low electrical resistance is set to be smaller than the thickness of the portion overlapping with the first electrode. In terms of particle size, a particle size of 100 nm or less is preferable, and a particle size of 10 nm or less is particularly preferable.

[0097] In this configuration, the thickness of the region with low electrical resistance is the thickness of the portion overlapping the side surface of the insulating partition wall. As a result, the side surface of the partition wall is 50 nm or less, and particularly preferably 5 nm or less. In particular, when the thickness is less than 5 nm, the layer spreads. The layers are broken in the cross direction, becoming discontinuous, and the electrical resistance increases rapidly. It is possible to provide a light-emitting panel in which the occurrence of the talk phenomenon is suppressed.

[0098] The light-emitting element exemplified in this embodiment has a first electrode, a second electrode, and a pair of the first electrode and the second electrode. A layer containing a light-emitting organic compound (hereinafter referred to as an EL layer) is provided between the electrodes. Either the first or second electrode functions as an anode, and the other functions as a cathode. The EL layer is disposed between the first and second electrodes, and the composition of the EL layer is determined according to the materials of the first and second electrodes. An example of the configuration of the light-emitting element is shown below. It goes without saying that the present invention is not limited to the above.

[0099] <Light emitting element configuration example 1.> An example of the configuration of a light-emitting element is shown in FIG. The EL layer is sandwiched between the cathode 1102 and the cathode 1102 .

[0100] When a voltage higher than the threshold voltage of the light-emitting element is applied between the anode 1101 and the cathode 1102, E Holes are injected into the L layer from the anode 1101 side, and electrons are injected from the cathode 1102 side. The injected electrons and holes recombine in the EL layer, causing the luminescent material contained in the EL layer to emit light. .

[0101] In this specification, a layer having one region where electrons and holes injected from both ends recombine is referred to as a layer having one region where electrons and holes recombine from both ends. Therefore, the light-emitting element in the configuration example 1 has one light-emitting unit. It can be said that we are prepared for this.

[0102] The light-emitting unit 1103 may include at least one light-emitting layer containing a light-emitting material. The light-emitting layer may be laminated with a layer other than the light-emitting layer. Substances with high hole injection properties, substances with high hole transport properties, substances with poor hole transport properties (blocking) Materials with high electron transport properties, materials with high electron injection properties, and materials with bipolar properties (electron and A layer containing a substance having a high hole transporting property can be given as an example.

[0103] An example of a specific configuration of the light-emitting unit 1103 is shown in FIG. The unit 1103 includes a hole injection layer 1113, a hole transport layer 1114, an emissive layer 1115, and an electron transport layer 1116. A transport layer 1116 and an electron injection layer 1117 are laminated in this order from the anode 1101 side. do.

[0104] <Light emitting element configuration example 2.> Another example of the configuration of the light-emitting element is shown in FIG. An EL layer including a light-emitting unit 1103 is sandwiched between the cathode 1101 and the cathode 1102. Additionally, an intermediate layer 1104 is provided between the cathode 1102 and the light-emitting unit 1103 . In addition, the light-emitting unit 1103 of the light-emitting element of the configuration example 2 includes the light-emitting element of the configuration example 1 described above. The same configuration as that of the light-emitting unit of the light-emitting device can be applied. Please refer to Example 1.

[0105] The intermediate layer 1104 is formed to include at least a charge generating region. For example, the first charge generating region 1104c may be laminated with a layer other than the charge generating region 1104a. The child relay layer 1104b and the electron injection buffer 1104a are arranged in this order from the cathode 1102 side. A laminated structure can be applied.

[0106] The behavior of electrons and holes in the intermediate layer 1104 will be described. When a voltage higher than the threshold voltage of the light-emitting element is applied between the first charge generating region 1104 and the second charge generating region 1105, the first charge generating region 1104 At c, holes and electrons are generated, the holes move to the cathode 1102, and the electrons move to the electron relay layer 1 The electron relay layer 1104b has high electron transport properties and moves to the first charge generation region 104b. The electrons generated in 1104c are quickly transferred to the electron injection buffer 1104a. The buffer 1104a reduces the barrier for injecting electrons into the light-emitting unit 1103, Therefore, the electron injection efficiency to the first charge generation region 1104c is increased. The electrons travel through the electron relay layer 1104b and the electron injection buffer 1104a to the light-emitting unit 1104b. The electrons are injected into the LUMO level of dot 1103.

[0107] The electron relay layer 1104b is formed by bonding the material constituting the first charge generating region 1104c to the electrons. The substances that make up the injection buffer 1104a react at the interface, damaging each other's functions. This can prevent interactions such as

[0108] The range of materials that can be used for the cathode of the light-emitting device of the second configuration example is as wide as that of the cathode of the first configuration example. The range of materials that can be used for the cathode of the second embodiment is wider than that of the intermediate cathode. This is because the layer only needs to receive the generated holes, and a material with a relatively large work function can be used. do.

[0109] <Light emitting element configuration example 3.> Another example of the configuration of the light-emitting element is shown in FIG. The EL layer has two light-emitting units between the cathode 1101 and the cathode 1102. In addition, an intermediate light emitting unit (1103a) is provided between the first light emitting unit (1103b) and the second light emitting unit (1103b). A layer 1104 is provided.

[0110] The number of light-emitting units provided between the anode and the cathode is not limited to two. The light emitting element shown in FIG. 11 has a structure in which a plurality of light emitting units 1103 are stacked, that is, a so-called tandem type light emitting element. However, for example, n layers (n is a natural number of 2 or more) are formed between an anode and a cathode. When the optical unit 1103 is provided, the mth (m is a natural number, 1 or more (n-1) or less) Between the light-emitting unit and the (m+1)th light-emitting unit, an intermediate layer 1104 is provided. The configuration will be as follows.

[0111] In addition, the light-emitting unit 1103 of the light-emitting element of the configuration example 3 includes the light-emitting element of the configuration example 1 described above. It is possible to apply a similar configuration to the intermediate layer 110 of the configuration example 3 of the light-emitting device. The same configuration as in the configuration example 2 of the light-emitting device described above can be applied to the light-emitting device 4. For this, the description of Configuration example 1 of the light-emitting element or Configuration example 2 of the light-emitting element can be referred to.

[0112] The behavior of electrons and holes in the intermediate layer 1104 provided between the light-emitting units will be described. When a voltage higher than the threshold voltage of the light-emitting element is applied between the anode 1101 and the cathode 1102, In the intermediate layer 1104, holes and electrons are generated, and the holes are guided to the light-emitting The electrons move to the light-emitting unit on the anode side. The holes injected into the light-emitting unit are recombined with the electrons injected from the cathode side, producing the light-emitting The luminescent material contained in the unit emits light. The injected electrons are recombined with holes injected from the anode side to form the light-emitting element contained in the light-emitting unit. The material emits light. Therefore, the holes and electrons generated in the intermediate layer 1104 are This leads to light emission in the light-emitting unit.

[0113] In addition, by providing the light-emitting units in contact with each other, the same structure as the intermediate layer is formed between them. In this case, the light-emitting units can be provided in contact with each other. When a charge generating region is formed on one surface, the charge generating region is a first charge generating region of the intermediate layer. Since it functions as a green area, the light-emitting units can be provided in contact with each other.

[0114] The light-emitting element configuration examples 1 to 3 can be used in combination with each other. For example, An intermediate layer can be provided between the cathode and the light-emitting unit in the third structural example of the light-emitting element.

[0115] <Materials that can be used in light-emitting devices> Next, specific materials that can be used in the light-emitting device having the above-mentioned configuration will be described. The cathode and EL layer will be described in that order.

[0116] <Materials that can be used for the anode> The anode 1101 is made of a metal or alloy having a large work function (specifically, preferably 4.0 eV or more). , electrically conductive compounds, and mixtures thereof. For example, indium tin oxide (ITO), silicon or Indium tin oxide and indium zinc oxide (InZO) containing silicon oxide inc Oxide), tungsten oxide and zinc oxide-containing indium oxide, etc. Some examples include:

[0117] These conductive metal oxide films are usually formed by sputtering, but they can also be formed by sol-gel deposition. For example, an indium-zinc oxide film can be prepared by applying the indium oxide method. The target was made of 1wt% to 20wt% zinc oxide. The film can be formed by a deposition method. The indium oxide film is made by mixing tungsten oxide at 0.5 wt% or more with respect to indium oxide. wt% or less, and zinc oxide was used as a target containing 0.1wt% to 1wt%. It can be formed by a pulverizing method.

[0118] Other than these, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium ( Cr), Molybdenum (Mo), Iron (Fe), Cobalt (Co), Copper (Cu), Palladium (Pd), titanium (Ti), or nitrides of metallic materials (e.g., titanium nitride, etc.), molybdenum Dendrimer oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide and titanium oxide. Poly(3,4-ethylenedioxythiophene) / Poly(styrenesulfonic acid) (PEDOT / PSS), Polyaniline / Poly(styrene A conductive polymer such as polyphenylene sulfonic acid (PAni / PSS) may also be used.

[0119] However, when a second charge generating region is provided in contact with the anode 1101, the work function is not taken into consideration. Various conductive materials can be used for the anode 1101. In addition to materials with a high work function, materials with a low work function can also be used. The constituent materials will be described later together with the first charge generating region.

[0120] <Materials that can be used for the cathode> The first charge generating region 1104c is in contact with the cathode 1102 and is disposed between the light emitting unit 1103 and the first charge generating region 1104b. When provided, the cathode 1102 can use various conductive materials regardless of the work function. This is possible.

[0121] Note that at least one of the cathode 1102 and the anode 1101 is formed using a conductive film that transmits visible light. Examples of the conductive film that transmits visible light include indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO), indium zinc oxide, indium tin oxide added with silicon oxide, and the like. Also, a metal thin film having a light transmittance (preferably about 5 nm or more and 30 nm or less) can be used. When provided, the cathode 1102 can use various conductive materials regardless of the work function. Examples of the conductive film that transmits visible light include indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO), indium zinc oxide, indium tin oxide added with silicon oxide, and the like. Also, a metal thin film having a light transmittance (preferably about 5 nm or more and 30 nm or less) can be used. Examples of the conductive film that transmits visible light include indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO), indium zinc oxide, indium tin oxide added with silicon oxide, and the like. Also, a metal thin film having a light transmittance (preferably about 5 nm or more and 30 nm or less) can be used. Examples of the conductive film that transmits visible light include indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO), indium zinc oxide, indium tin oxide added with silicon oxide, and the like. Also, a metal thin film having a light transmittance (preferably about 5 nm or more and 30 nm or less) can be used. Examples of the conductive film that transmits visible light include indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO), indium zinc oxide, indium tin oxide added with silicon oxide, and the like. Also, a metal thin film having a light transmittance (preferably about 5 nm or more and 30 nm or less) can be used. Examples of the conductive film that transmits visible light include indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO), indium zinc oxide, indium tin oxide added with silicon oxide, and the like. Also, a metal thin film having a light transmittance (preferably about 5 nm or more and 30 nm or less) can be used.

[0122] <Materials that can be used for the EL layer> Specific examples of the materials that can be used for each layer constituting the above-described light-emitting unit 1103 are shown below. Specific examples are shown below.

[0123] The hole injection layer is a layer containing a substance with high hole injection properties. Examples of the substance with high hole injection properties include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, and the like. In addition, a phthalocyanine-based compound such as phthalocyanine (abbreviation: H2Pc) or copper phthalocyanine (abbreviation: CuPc), or a polymer such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) can also be used to form the hole injection layer. Examples of the substance with high hole injection properties include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, and the like. In addition, a phthalocyanine-based compound such as phthalocyanine (abbreviation: H2Pc) or copper phthalocyanine (abbreviation: CuPc), or a polymer such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) can also be used to form the hole injection layer. Examples of the substance with high hole injection properties include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, and the like. In addition, a phthalocyanine-based compound such as phthalocyanine (abbreviation: H2Pc) or copper phthalocyanine (abbreviation: CuPc), or a polymer such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) can also be used to form the hole injection layer. Examples of the substance with high hole injection properties include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, and the like. In addition, a phthalocyanine-based compound such as phthalocyanine (abbreviation: H2Pc) or copper phthalocyanine (abbreviation: CuPc), or a polymer such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) can also be used to form the hole injection layer. Examples of the substance with high hole injection properties include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, and the like. In addition, a phthalocyanine-based compound such as phthalocyanine (abbreviation: H2Pc) or copper phthalocyanine (abbreviation: CuPc), or a polymer such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) can also be used to form the hole injection layer. Examples of the substance with high hole injection properties include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, and the like. In addition, a phthalocyanine-based compound such as phthalocyanine (abbreviation: H2Pc) or copper phthalocyanine (abbreviation: CuPc), or a polymer such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) can also be used to form the hole injection layer.

[0124] Note that the hole injection layer may be formed using the second charge generation region. The second charge may be added to the hole injection layer. When the charge generation region is used, various conductive materials can be used for the anode 1101 without considering the work function. As described above, the material constituting the second charge generating region can be the same as that of the first charge generating region. This will be described later together with the charge generating region.

[0125] <Hole transport layer> The hole transport layer is a layer containing a substance having a high hole transporting property. The layer may be a laminate of two or more layers each containing a substance having a high hole transporting property. Any substance with a high -6 cm 2 A substance having a hole mobility of at least / Vs is This is preferable because the driving voltage of the light emitting element can be reduced.

[0126] An example of a material with high hole transport properties is 4,4'-bis[N-(1-naphthyl)-N-phenylene]. N,N'-bis(3-phenylamino)biphenyl (abbreviation: NPB or α-NPD), N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamino TPD, 4-phenyl-4'-(9-phenylfluoren-9-yl)trifluoroethylene Phenylamine (abbreviation: BPAFLP), 4,4',4''-tris(carbazole-9 -yl)triphenylamine (abbreviation: TCTA), 4,4',4''-tris(N,N- Diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-triphenylamine S[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: M TDATA), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)- N-phenylamino]biphenyl (abbreviation: BSPB) and other aromatic amine compounds. Or, 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamine No]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9- Phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazo (amino)-9-phenylcarbazole (abbreviation: PCzPCN1) or 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP); 1,3,5-Tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB) , 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA) and other carbazole derivatives.

[0127] In addition, poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltetradecane) triphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenyl phenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide Poly[N,N'-bis(4-butylphenyl)-N,N' -bis(phenyl)benzidine (abbreviation: Poly-TPD) and other polymer compounds are used to It can be used in the transport layer.

[0128] <Light-emitting layer> The light-emitting layer is a layer containing a light-emitting substance. The light-emitting layer is not limited to a single layer, but may be a layer having two layers containing a light-emitting substance. The light-emitting material may be a fluorescent compound or a phosphorescent compound. It is preferable to use a phosphorescent compound as the light-emitting substance because the light-emitting efficiency of the light-emitting element can be increased. stomach.

[0129] Examples of fluorescent compounds that can be used as luminescent materials include N,N'-bis[4 -(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4 ,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4' -(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4- (9H-Carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl) Triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-(10 -phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: P CAPA), Perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-ca N,N''-(2-pyridazol-3-yl)triphenylamine (abbreviation: PCBAPA), -tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis[N ,N',N'-triphenyl-1,4-phenylenediamine] (abbreviation: DPABPA), N,9-Diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl] -9H-Carbazole-3-amine (abbreviation: 2PCAPPA), N-[4-(9,10- Diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-f Phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N'',N ''',N'''-Octaphenyldibenzo[g,p]chrysene-2,7,10,15- Tetraamine (abbreviation: DBC1), Coumarin 30, N-(9,10-diphenyl-2-phenyl) N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAP) A) N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]- N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N -(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4 -phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(1,1'-biphenyl)] N,N',N'-triphenyl-1,4-phenyl Nylenediamine (abbreviation: 2DPABPhA), 9,10-bis(1,1'-biphenyl- 2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenyla N,N,9-triphenylanthrane-2-amine (abbreviation: 2YGABPhA), Helical 9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenyl Ruquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(1,1'-biphenyl) -4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[ 4-(Dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-ylidene (DCM1), 2-{2-methyl-6-[2-(2,3, 6,7-Tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl] -4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N' ,N'-Tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p -mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methyl Phenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p- mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl -2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl) ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6 ,7-Tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]- 4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6 -Bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-yl 2-{2,6-bis[2-(8-methylphenyl)propanedinitrile (abbreviation: BisDCM) Toxo-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H- Benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}pro Pandinitrile (abbreviation: BisDCJTM), SD1 (product name; SFC Co., Ltd. d) and others.

[0130] Examples of phosphorescent compounds that can be used as luminescent materials include bis[2-(4', 6'-Difluorophenyl)pyridinato-N,C 2’ ]Iridium(III) tetrakis (1-Pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluoro Phenyl)pyridinato-N,C 2’ ]Iridium(III) picolinate (abbreviation: FIr pic), bis[2-(3',5'-bistrifluoromethylphenyl)pyridinato-N ,C 2’ ]Iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pi c)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]stomach Lithium(III) acetylacetonate (abbreviation: FIracac), tris(2-phenyl Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-fluorophenylpyridinato)iridium(III) [Ir(ppyphenylpyridinato)iridium(III) acetylacetonate )2(acac)]), bis(benzo[h]quinolinato)iridium(III) acetyl Acetonate (abbreviation: [Ir(bzq)2(acac)]), bis(2,4-diphenyl -1,3-Oxazolato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation Name: [Ir(dpo)2(acac)]), bis{2-[4'-(perfluorophenyl )phenyl]pyridinato-N,C2'}iridium(III) acetylacetonate (abbreviation Name: [Ir(p-PF-ph)2(acac)]), Bis(2-phenylbenzothiazolan To-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(bt)2 (acac)]), bis[2-(2'-benzo[4,5-α]thienyl)pyridinato-N ,C 3 ']Iridium(III) acetylacetonate (abbreviation: [Ir(btp)2(a cac)]), bis(1-phenylisoquinolinato-N,C 2’ ) Iridium(III) Acetylacetonate (abbreviation: [Ir(piq)2(acac)]), (acetylacetonate Nato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(II I) (abbreviation: [Ir(Fdpq)2(acac)]), (acetylacetonato)bis(2 ,3,5-triphenylpyrazinate)iridium(III) (abbreviation: [Ir(tppr) 2(acac)]), 2,3,7,8,12,13,17,18-octaethyl-21H , 23H-porphyrin platinum(II) (abbreviation: PtOEP), tris(acetylacetonate) Tb(acac)3(Ph en)), tris(1,3-diphenyl-1,3-propanedionato)(monophenanthate) Europium(III) (abbreviation: Eu(DBM)3(Phen)), tris[1 -(2-Thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline) Europium(III) (abbreviation: Eu(TTA)3(Phen)), bis(2,3,5- Triphenylpyrazinate)(dipivaloylmethanato)iridium(III)(abbreviation: [I r(tppr)2(dpm)]).

[0131] The light-emitting material is preferably dispersed in a host material. It is preferable that the electromotive energy is larger than the excitation energy of the luminescent material.

[0132] Materials that can be used as the host material include NPB (abbreviation), TPD (abbreviation), TCTA (abbreviation), TDATA (abbreviation), MTDATA (abbreviation), BSPB (abbreviation), etc. Which aromatic amine compounds, PCzPCA1 (abbreviation), PCzPCA2 (abbreviation), PCzP CN1(abbreviation), CBP(abbreviation), TCPB(abbreviation), CzPA(abbreviation), 9-phenyl -3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation Name: PCzPA), 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl The use of carbazole derivatives such as PCBA1BP Or, PVK (abbreviation), PVTPA (abbreviation), PTPDMA (abbreviation), P It is possible to use materials with high hole transport properties, including polymer compounds such as poly-TPD (abbreviation). Alternatively, tris(8-quinolinolato)aluminum (abbreviation: Alq), tris( 4-Methyl-8-quinolinolato)aluminum (abbreviation: Almq3), bis(10-hydroxy Bis(2-methyl-p-tert-butyl ether) beryllium (abbreviation: BeBq2) 8-quinolinolato)(4-phenylphenolato)aluminum (abbreviation: BAlq), etc. A metal complex having a quinoline skeleton or a benzoquinoline skeleton can be used. , bis[2-(2'-hydroxyphenyl)benzoxazolato]zinc (abbreviation: Zn(B OX)2), bis[2-(2'-hydroxyphenyl)benzothiazolato]zinc (abbreviation: Zn(BTZ)2), and other metal complexes with oxazole or thiazole ligands were used. Alternatively, 2-(4-biphenylyl)-5-(4-tert-butylphenyl) phenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p- tert-Butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation Name: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazole-2-yl] (4-biphenyl)phenyl]carbazole (abbreviation: CO11), 3-(4-biphenylyl)-4-phenyl Nyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TA Z), Bathophenanthroline (abbreviation: BPhen), Bathocuproine (abbreviation: BCP) A substance having a high electron transporting property such as a fluorine atom can be used.

[0133] <Electron transport layer> The electron transport layer is a layer containing a substance having a high electron transporting property. The layer may be a laminate of two or more layers each containing a substance having a high electron transporting property. Any substance with a high -6 cm 2 A substance having an electron mobility of at least 1000 V / Vs is This is preferable because the driving voltage of the light emitting element can be reduced.

[0134] Examples of materials with high electron transport properties include Alq (abbreviation), Almq3 (abbreviation), and BeBq Gold compounds with quinoline or benzoquinoline skeletons such as 2 (abbreviation) and BAlq (abbreviation) Alternatively, Zn(BOX)2 (abbreviation), Zn(BTZ)2 Metal complexes with oxazole and thiazole ligands such as (abbreviation) can also be used. Or, PBD (abbreviation), OXD-7 (abbreviation), CO11 (abbreviation), TAZ (abbreviation), BPhen (abbreviation), BCP (abbreviation), 2-[4-(dibenzothiophene-4 -yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: DBTBIm- II) etc.

[0135] In addition, poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridyl) lysine-3,5-diyl)] (abbreviation: PF-Py), poly[(9,9-dioctylfluoro (2,2'-bipyridine-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation Polymer compounds such as PF-BPy can be used for the electron transport layer.

[0136] <Electron injection layer> The electron injection layer is a layer containing a substance with high electron injection properties. The electron injection layer may be a layer including two or more layers each containing a substance having a high electron injection property. This increases the efficiency of electron injection from the cathode 1102, making it possible to reduce the driving voltage of the light-emitting element. This is preferable because

[0137] Examples of materials with high electron injection properties include lithium (Li), cesium (Cs), and calcium. Ca(Ca), Lithium Fluoride (LiF), Cesium Fluoride (CsF), Calcium Fluoride Examples of the metal include alkali metals such as (CaF2), alkaline earth metals, and compounds thereof. In addition, the substance having electron transport properties may contain an alkali metal, an alkaline earth metal, or magnesium. Mg or its compounds, e.g. magnesium in Alq It is also possible to use one containing (Mg).

[0138] <Materials that can be used in the charge generation region> The first charge generation region 1104c and the second charge generation region are made of a material having a high hole transporting property. This region contains a substance that acts as an acceptor for the substance with high hole transport properties. The region is a region in which a substance having a high hole transporting property and an acceptor for the substance having a high hole transporting property are contained in the same film. In addition to the case where a material having a high hole transporting property is contained, a layer containing a material having a high hole transporting property and a material having an acceptor property may be used. However, in the case of a laminate in which the first charge generating region is provided on the cathode side, In the case of the structure, a layer containing a material with high hole transporting properties is in contact with the cathode 1102. In the case of a laminated structure in which the charge generating region 2 is provided on the anode side, a layer containing an acceptor material is This structure is in contact with the anode 1101 .

[0139] In addition, in the charge generation region, the mass ratio of the material with high hole transport properties to the material with high hole transport properties is 0.1 or more and 4. It is preferable to add the acceptor substance at a ratio of 0 or less.

[0140] Acceptor substances used in the charge generation region include transition metal oxides and elements in the periodic table. Examples of the oxides of metals belonging to Groups 4 to 8 include molybdenum oxide. Molybdenum oxide is particularly preferred. Molybdenum oxide has the characteristic of low hygroscopicity. .

[0141] In addition, examples of the material having a high hole transporting property used in the charge generating region include aromatic amine compounds, carbene compounds, and benzene compounds. Bazole derivatives, aromatic hydrocarbons, polymer compounds (oligomers, dendrimers, polymers Various organic compounds such as 10 -6 cm 2 / Vs However, it is preferable that the material has a hole mobility of 100 or more. Any other substance may be used as long as it has a high resistance.

[0142] <Materials that can be used for the electronic relay layer> The electron relay layer 1104b is an acceptor material in the first charge generating region 1104c. Therefore, the electron relay layer 11 is a layer that can quickly receive the electrons that are extracted by the electron relay layer 11. 04b is a layer containing a substance with high electron transport properties, and its LUMO level is the first charge The acceptor level of the acceptor substance in the generation region 1104c and the electron relay The layer is located between the LUMO level of the adjacent light-emitting unit 1103. It is preferable to set the value to -5.0 eV or more and -3.0 eV or less.

[0143] The material used for the electron relay layer 1104b is, for example, a perylene derivative or a nitrogen-containing condensation polymer. Nitrogen-containing condensed aromatic compounds are stable compounds. The material for the electron relay layer 1104b is preferably a nitrogen-containing condensed aromatic compound. Among them, by using compounds having electron-withdrawing groups such as cyano groups and fluoro groups, This is preferable since it makes it easier for the daughter relay layer 1104b to receive electrons.

[0144] Specific examples of perylene derivatives include 3,4,9,10-perylenetetracarboxylic dianhydride. (abbreviation: PTCDA), 3,4,9,10-perylenetetracarboxylic bis(benzyl)benzene Zoimidazole (abbreviation: PTCBI), N,N'-dioctyl-3,4,9,10-periodic PTCDI-CH, N,N'-dihexyl 3,4,9,10-perylenetetracarboxylic diimide (abbreviation: Hex PTC) Can be obtained.

[0145] Specific examples of nitrogen-containing condensed aromatic compounds include pyrazino[2,3-f][1,10] Phenanthroline-2,3-dicarbonitrile (PPDN), 2,3,6,7,1 0,11-Hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation :HAT(CN)6), 2,3-diphenylpyrido[2,3-b]pyrazine (abbreviation: 2P YPR), 2,3-bis(4-fluorophenyl)pyrido[2,3-b]pyrazine (abbreviation :F2PYPR) etc.

[0146] In addition, 7,7,8,8-tetracyanoquinodimethane (TCNQ), 1,4 ,5,8,-Naphthalenetetracarboxylic dianhydride (abbreviation: NTCDA), Perfluoro Pentacene, copper hexadecafluorophthalocyanine (abbreviation: F16 CuPc), N,N' -Bis(2,2,3,3,4,4,5,5,6,6,7,7,8,8,8,Pentadecafu Fluorooctyl-1,4,5,8-naphthalenetetracarboxylic diimide (abbreviation: NTC DI-C8F), 3',4'-dibutyl-5,5''-bis(dicyanomethylene)-5, 5''-Dihydro-2,2':5',2''-terthiophene (abbreviation: DCMT), meta Nonofullerenes (e.g., [6,6]-phenyl C 61 Butyric acid methyl ester) etc. It can be used for layer 1104b.

[0147] <Materials that can be used as electron injection buffer> The electron injection buffer 1104a transfers the electrons from the first charge generation region 1104c to the light-emitting unit 11. The electron injection buffer 1104a is a layer that facilitates the injection of electrons into the first charge carrier 1103. By providing the light-emitting unit 1103 between the generation region 1104c and the light-emitting unit 1103, the injection barrier between the two regions is can be alleviated.

[0148] The electron injection buffer 1104a contains alkali metals, alkaline earth metals, rare earth metals, and and their compounds (alkali metal compounds (oxides such as lithium oxide, halides, (including carbonates such as lithium carbonate and cesium carbonate), alkaline earth metal compounds (oxides, halides, etc.) compounds of rare earth metals (including oxides, halides, carbonates) It is possible to use a material with high electron injection properties, such as

[0149] In addition, the electron injection buffer 1104a is made of a material having a high electron transporting property and a material having a high electron transporting property. When the material is formed by including a donor material for the material, the material is preferably a material with high electron transport properties. It is preferable to add the donor substance in an amount ratio of 0.001 to 0.1. The donor substance may be an alkali metal, an alkaline earth metal, a rare earth metal, or any of these. These compounds (alkali metal compounds (oxides such as lithium oxide, halides, lithium carbonate, etc.) Alkaline earth metal compounds (including carbonates such as cesium carbonate and cesium carbonate) , carbonates), or compounds of rare earth metals (including oxides, halides, carbonates) ), tetrathianaphthacene (abbreviation: TTN), nickelosene, decamethyl nickelosene As a substance having a high electron transporting property, the above-mentioned organic compounds such as ethylenediaminetetraacetate and ethylenediaminetetraacetate can be used. The material may be the same as the material of the electron transport layer that may be formed as part of the light-emitting unit 1103 described above. It can be formed using materials.

[0150] <Method of manufacturing light-emitting element> One embodiment of a method for manufacturing a light-emitting element will be described. The EL layer is formed by combining the above-mentioned materials. The EL layer can be formed by various methods (e.g., drying For example, a vacuum deposition method, an inkjet method, or a wet method can be used. A method such as spin coating may be selected and used. Also, each layer may be formed using a different method. A second electrode is formed on the EL layer to complete a light-emitting element.

[0151] The light-emitting element shown in this embodiment can be manufactured by combining the above-mentioned materials. From this light-emitting element, light is emitted from the above-mentioned luminescent material, and the color of the emitted light is Selection can be made by changing the type of luminescent material.

[0152] In addition, by using multiple luminescent materials with different luminescent colors, the width of the emission spectrum can be expanded. In order to obtain white light emission, for example, a light-emitting material may be included. The composition has at least two layers each having a complementary color. The color of the light emitted by the LED can be expressed as the color of the light emitted by the LED. Alternatively, blue-green and red may be used.

[0153] Furthermore, to obtain white light with good color rendering, the emission spectrum must extend over the entire visible light range. For example, the layer may be configured to emit blue, green, and red light. That's good.

[0154] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. .

[0155] (Embodiment 4) In this embodiment, a light-emitting device using a light-emitting panel according to one embodiment of the present invention will be described with reference to FIG. Specifically, the thickness of the layer containing the light-emitting organic compound at the portion overlapping the side surface of the partition wall is A1 is less than 1 / 2 of the thickness A0 of the layer containing the light-emitting organic compound in contact with the first electrode. The thickness B1 of the second electrode at the portion overlapping the side of the partition wall and the thickness B2 of the first electrode at the portion overlapping the first electrode are The ratio (B1 / B0) calculated from the thickness B0 of the two electrodes is greater than (A1 / A0). , active matrix type and passive matrix type in which light emission is taken out to the second electrode side A top emission type light emitting device will be described.

[0156] <Active matrix type light emitting device> The structure when applied to an active matrix type light emitting device is shown in FIG. 6. 6(B) is a cross-sectional view taken along lines AB and CD in FIG. 6(A). FIG.

[0157] The active matrix light emitting device 1400 includes a driving circuit section (source side driving circuit) 140. 1, pixel section 1402, driving circuit section (gate side driving circuit) 1403, sealing substrate 1404, The inside surrounded by the sealing material 1405 is , it has become space.

[0158] The light emitting device 1400 is connected to an FPC (flexible printed circuit) 1400 which serves as an external input terminal. Via 09, it receives video signals, clock signals, start signals, reset signals, etc. Although only the FPC is shown here, the FPC also includes a printed wiring board (PWB). The light emitting device in this specification includes not only the light emitting device body but also This also includes the state in which an FPC or PWB is attached to it.

[0159] Next, the structure of the light emitting device 1400 will be described with reference to the cross-sectional view shown in FIG. The device 1400 includes a driving circuit 1401 including a source side driving circuit 1401 illustrated on a device substrate 1410. The pixel portion 1402 includes a circuit portion and the pixel portion 1402 including the pixel shown in FIG. 1401 and a wiring for transmitting signals input to the gate side driver circuit 1403. It has a line 1408.

[0160] In this embodiment, the source side driver circuit 1401 includes an n-channel transistor 1423 Regarding the configuration including a CMOS circuit combining a p-channel transistor 1424 However, the driving circuit is not limited to this configuration and may be various CMOS circuits, PMOS circuits, or In this embodiment, the driving circuit is formed on the substrate. Although the driver integrated type is shown, this is not necessarily required, and the driver circuit can be external rather than on the board. It can also be formed.

[0161] <Transistor structure> Various semiconductors can be used for the region in which the transistor channel is formed. Specifically, amorphous silicon, polysilicon, and oxide semiconductors can be used. There can be.

[0162] In addition, a single crystal semiconductor can be used for a region in which a channel of a transistor is formed. When a single crystal semiconductor is used for the channel formation region, the size of the transistor can be reduced. This makes it possible to achieve higher resolution pixels in the display section.

[0163] As the single crystal semiconductor constituting the semiconductor layer, a single crystal silicon substrate, a single crystal gate Single crystal semiconductors made of Group 14 elements, such as ruthenium substrates and single crystal silicon germanium substrates Semiconductors such as solid substrates and compound semiconductor substrates (SiC substrates, sapphire substrates, GaN substrates, etc.) A substrate having a single crystal semiconductor layer on an insulating surface is preferably used. (Silicon On Insulator) substrates can be used.

[0164] The method for producing SOI substrates is to implant oxygen ions into a mirror-polished wafer and then heat it at high temperatures. By this, an oxide layer is formed at a certain depth from the surface, and the chips in the surface layer are removed. A method for eliminating microvoids formed by hydrogen ion irradiation and a method for forming microvoids by heat treatment. A method of cleaving a semiconductor substrate by utilizing the length of the insulating film, or a method of growing a single crystal semiconductor layer on an insulating surface by crystal growth For example, a method for forming a film may be used.

[0165] In this embodiment mode, ions are added from one surface of a single crystal semiconductor substrate to form a single crystal semiconductor substrate. A weakened layer is formed at a certain depth from one surface of the plate, and the single crystal semiconductor substrate is An insulating layer is formed on either one of the element substrates 1410. 1410 are stacked with an insulating layer in between, and a crack is generated in the weakened layer to separate the single crystal semiconductor. A heat treatment is performed to separate the conductive substrate at the weakened layer, and the single crystal semiconductor substrate is separated into a semiconductor layer. The crystalline semiconductor layer is formed on an element substrate 1410. The element substrate 1410 is made of glass. A substrate can be used.

[0166] Also, an insulating isolation region is formed in the semiconductor substrate, and the insulating isolated semiconductor region is used to form a transistor. stanchions 1411 and 1412 may be formed.

[0167] By using a single crystal semiconductor as the channel formation region, Since the variation in electrical characteristics such as the threshold voltage of the transistor caused by the above problem can be reduced, the present invention The display device according to the present invention can normally display images without providing a circuit for compensating for a threshold voltage in each pixel. Therefore, the circuit elements in one pixel can be reduced. This allows for improved freedom in layout, thereby enabling the display device to have higher definition. For example, a matrix of pixels can be arranged at 350 pixels per inch. (horizontal resolution is 350 ppi (pixels per inch) or more), More preferably, the horizontal resolution is 400 ppi or more. This makes it possible.

[0168] Furthermore, a transistor using a single crystal semiconductor for a channel formation region has a high current driving capability. By using these fine transistors, the display Since the area of ​​the circuitry that does not contribute to the display can be reduced, the display area of ​​the display unit is expanded. Moreover, a narrower frame of the display device can be achieved.

[0169] <Pixel section configuration> The pixel portion 1402 includes a plurality of pixels. A current control transistor 1412 having a drain electrode connected to a first electrode 1413 of the transistor 18 and a switching transistor 1411. The configuration exemplified in the first embodiment can be applied.

[0170] A light emitting element 1418 provided in the light emitting panel has a first electrode 1413 and a second electrode 141. 7 and a layer 1416 containing a light-emitting organic compound. It is formed to cover the end of the electrode 1413 .

[0171] The partition wall 1414 has a curved surface at the upper or lower end. The walls 1414 are either negative type, which becomes insoluble in the etchant when exposed to light, or Any positive type that is soluble in the etchant by When a positive photosensitive acrylic is used as the material of the partition wall 1414, the upper end of the partition wall 1414 It is preferable that the chisel has a curved surface with a radius of curvature (0.2 μm to 3 μm). is formed by using a positive type photosensitive polyimide film.

[0172] In addition, if the partition wall is made of a light-shielding material, the reflection of external light caused by a reflective film provided on the light-emitting panel can be suppressed. The reflective film extending outside the light emitting element 1418 reflects external light and reduces the brightness of the light emitting device. The contrast is reduced, and vivid light emission cannot be obtained. can be formed by using a resin layer colored black.

[0173] The light-emitting element 1418 may have the structure shown in the embodiment 3. can.

[0174] Specifically, a structure that emits white light is applied to the layer 1416 containing a light-emitting organic compound. can.

[0175] In addition, a color filter 1434 can be provided at a position overlapping with the light-emitting element 1418 . In addition, a light-shielding film 1435 (also called a black matrix) is provided between adjacent light-emitting elements. The color filter 1434 and the light-shielding film 143 can be provided on the wall. 5 can be provided on the sealing substrate 1404.

[0176] In addition, a microresonator is formed by using the first electrode 1413 and the second electrode 1417 of the light-emitting element 1418. For example, a light-emitting device (also called a microcavity) can be formed on the first electrode 1413. A conductive film that reflects light emitted from the layer 1416 containing an organic compound is used as the second electrode 1417. In addition, the device can be constructed using a semi-transmissive / semi-reflective conductive film that reflects part of the light and transmits part of it. do.

[0177] In addition, an optical adjustment layer can be provided between the first electrode and the second electrode. The optical distance between the reflective first electrode 1413 and the semi-transmissive and semi-reflective second electrode 1417 is adjusted. By adjusting the thickness of the optical adjustment layer, the light emitted from the second electrode 1417 can be selectively adjusted. The wavelength of the light extracted can be adjusted.

[0178] As a material that can be used for the optical adjustment layer, a layer containing a light-emitting organic compound can be applied. For example, the thickness of the charge generating region may be adjusted. A region including a substance and an acceptor substance for the substance with high hole transport properties is used as an optical adjustment layer. This is preferable because it is possible to suppress an increase in driving voltage even if the optical adjustment layer is thick.

[0179] Other materials that can be used for the optical adjustment layer include layers containing luminescent organic compounds. A light-transmitting conductive film that transmits the light emitted by 1416 can be used. For example, a reflective conductive film The first electrode 1413 can be formed by laminating a light-transmitting conductive film on the surface. According to the method, it is preferable because it is easy to change the thickness of the optical adjustment layer of adjacent first electrodes. stomach.

[0180] <Sealing structure> The light emitting device 1400 illustrated in this embodiment includes an element substrate 1410, a sealing substrate 1404, and A space 1407 surrounded by the sealing material 1405 is provided with a light-emitting panel according to one embodiment of the present invention. The space 1407 is filled with a filler. In addition to the case where it is filled with an inert gas (nitrogen, argon, etc.), sealing material 14 In some cases, the tank may be filled with 05. Also, a desiccant or other material for adsorbing impurities may be provided.

[0181] The sealant 1405 and the sealing substrate 1404 are capable of preventing impurities in the air (such as moisture and oxygen). It is desirable to use a material that is as opaque as possible. The sealing material 1405 is made of epoxy resin or , glass frit, etc. can be used.

[0182] Materials that can be used for the sealing substrate 1404 include glass substrates, quartz substrates, and PV Plastic substrate made of F (polyvinyl fluoride), polyester, acrylic, etc. and FRP (Fiberglass-Reinforced Plastics), etc. Examples of this include:

[0183] A spacer 1433 may be provided on the partition 1414. The spacer 1433 is spherical. The spacer 143 may be cylindrical or may have a curved upper surface. The partition wall 141 may be formed of an electrically insulating material. 4, the sealing substrate 1404 may bend due to the application of an external force, and may damage the light emitting element 1418. It can prevent elephants.

[0184] In the above-described active matrix light-emitting device according to one embodiment of the present invention, The thickness A1 of the layer containing the light-emitting organic compound is the thickness of the light-emitting organic compound in the portion in contact with the first electrode. The thickness of the second electrode at the portion overlapping the side surface of the partition wall is less than 1 / 2 the thickness A0 of the layer containing the compound. The ratio (B1 / B0) of the thickness B1 of the second electrode to the thickness B0 of the portion of the second electrode that overlaps the first electrode The light-emitting panel according to one embodiment of the present invention is equipped with a structure in which the ratio of A1 / A0 is larger than the ratio of A1 / A0. As a result, a light emitting device in which the occurrence of crosstalk is suppressed can be provided.

[0185] (Embodiment 5) In this embodiment, the thickness A1 of the layer containing the light-emitting organic compound in the portion overlapping the side surface of the partition wall is , thinner than 1 / 2 of the thickness A0 of the layer including the light-emitting organic compound in contact with the first electrode, The thickness B1 of the second electrode at the portion overlapping the side surface of the partition wall and the thickness B2 of the second electrode at the portion overlapping the first electrode are The present invention has a configuration in which the ratio (B1 / B0) calculated from the thickness B0 of the pole is greater than (A1 / A0). An example of a light-emitting device including a light-emitting panel according to one embodiment of the present invention will be described with reference to FIG.

[0186] As an example of an electronic device to which a light-emitting device is applied, a television set (a television, (also called TV receivers), computer monitors, digital cameras, digital video Cameras such as digital cameras, digital photo frames, mobile phones (mobile phones, mobile phone devices) (also called "video game consoles"), portable game machines, personal digital assistants, audio playback devices, large game machines such as pachinko machines Specific examples of these electronic devices are shown in Figure 7.

[0187] FIG. 7A shows an example of a television device. The television device 7100 is A display unit 7103 is built into the body 7101. The display unit 7103 displays images. It is possible to use a light-emitting device in the display portion 7103. 7, a housing 7101 is supported by a stand 7105.

[0188] The television device 7100 can be operated using an operation switch provided on the housing 7101 or a separate remote control. This can be done by the remote control operation device 7110. The channel and volume can be controlled by the 7109, and the display 7103 shows In addition, the remote control unit 7110 can control the video. A display unit 7107 for displaying information output from 7110 may be provided.

[0189] The television device 7100 includes a receiver and a modem. It can receive more general television broadcasts, and can also be connected to a modem via wired or wireless connection. By connecting to a network, communication can be one-way (sender to receiver) or two-way. It is also possible to communicate information (between a sender and a receiver, or between receivers).

[0190] FIG. 7B shows a computer, which includes a main body 7201, a housing 7202, a display unit 7203, and a keyboard. It includes a board 7204, an external connection port 7205, a pointing device 7206, and the like. Note that the computer is manufactured using a light-emitting device for its display portion 7203.

[0191] FIG. 7C shows a portable game machine that is composed of two housings, a housing 7301 and a housing 7302. The housing 7301 is connected to the display unit 7302 by a connection part 7303 so as to be openable and closable. 304 is incorporated in the housing 7302, and a display unit 7305 is incorporated in the housing 7302. The portable gaming machine shown in (C) also has a speaker unit 7306, a recording medium insertion unit 7307, LED lamp 7308, input means (operation keys 7309, connection terminal 7310, sensor 731 1 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry Material, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, Equipped with a microphone 7312) and other equipment, including a function to measure odor or infrared rays Of course, the configuration of the portable gaming machine is not limited to the above, and at least the display unit 73 A light-emitting device may be used for both the display portion 7304 and the display portion 7305, or for either one of them. The portable gaming machine shown in FIG. 7(C) is configured as follows: The function of reading out the programs or data recorded on the recording media and displaying them on the display unit, It has a function to share information with other portable game machines by wireless communication. The functions of the portable gaming machine shown are not limited to those described above, and the portable gaming machine may have a variety of functions.

[0192] FIG. 7D shows an example of a mobile phone. A mobile phone 7400 is attached to a housing 7401. In addition to the built-in display unit 7402, operation buttons 7403, external connection port 7404, The mobile phone 7400 is equipped with a light emitting device, a microphone 7406, and the like. The display portion 7402 is fabricated by using the same.

[0193] In a mobile phone 7400 shown in FIG. 7D, information is displayed by touching a display portion 7402 with a finger or the like. You can also make a call or write an email by This can be done by touching the display portion 7402 with a finger or the like.

[0194] The screen of the display unit 7402 has three main modes. The first is a display mode that is mainly used for displaying images. The first mode is a display mode, the second is an input mode for inputting information such as characters, and the third mode is a display mode. This is a display + input mode that combines the display mode and the input mode.

[0195] For example, when making a call or composing an e-mail, the display unit 7402 is used to input characters. The main character input mode is to input characters displayed on the screen. It is preferable to display a keyboard or number buttons on most of the screen of the display portion 7402. I wish.

[0196] In addition, a sensor for detecting the inclination such as a gyro or an acceleration sensor is installed inside the mobile phone 7400. By providing a detection device having the above configuration, the orientation of the mobile phone 7400 (vertical or horizontal) can be determined and the display The screen display of the display unit 7402 can be automatically switched.

[0197] The screen mode can be changed by touching the display portion 7402 or by operating the housing 7401. The type of image displayed on the display unit 7402 can be selected by operating the operation button 7403. For example, the image signal to be displayed on the display unit may be changed by If the data is text data, the mode switches to input mode.

[0198] In the input mode, the optical sensor of the display unit 7402 detects a signal and displays If there is no input by touch operation of the part 7402 for a certain period of time, the screen mode is changed to the input mode. Alternatively, the display mode may be switched from the normal mode to the display mode.

[0199] The display portion 7402 can also function as an image sensor. By touching the palm or fingers of the user on the sensor 02 and capturing an image of the palm print or fingerprint, the user can be authenticated. In addition, a backlight that emits near-infrared light to the display unit or a sensing light that emits near-infrared light By using a source, it is also possible to image finger veins, palm veins, etc.

[0200] 7E shows an example of a lighting device. A lighting device 7500 includes a light source in a housing 7501. The light-emitting devices 7503a to 7503d according to one embodiment of the present invention are incorporated as lighting devices. The 7500 can be mounted on a ceiling or wall.

[0201] In addition, in the light-emitting device according to one embodiment of the present invention, the light-emitting panel is a thin film, and therefore the light-emitting device can be mounted on a curved substrate. By attaching the light emitting device to the light emitting device, a light emitting device having a curved surface can be obtained. By disposing the light-emitting diode in a housing having a curved surface, an electronic device or lighting device having a curved surface can be realized. It is possible.

[0202] In the light-emitting device according to one embodiment of the present invention, a light-emitting organic compound is The thickness A1 of the layer containing the light-emitting organic compound is greater than the thickness A0 of the layer containing the light-emitting organic compound in the portion in contact with the first electrode. The thickness B1 of the second electrode at the portion overlapping the side surface of the partition wall is smaller than 1 / 2 of the thickness B2 of the first electrode. The ratio (B1 / B0) calculated from the thickness B0 of the second electrode at the portion where the thickness is greater than (A1 / A0). As a result, the light-emitting panel according to one embodiment of the present invention having a structure that prevents crosstalk from occurring is mounted on the display. It is possible to provide a light emitting device in which the generation of such noise is suppressed.

[0203] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. . EXAMPLES

[0204] <Light-emitting panel configuration> The structure of the light-emitting panel exemplified in this embodiment is shown in Fig. 8. The light-emitting panel 290 is a glass substrate. On the substrate 200, one light emitting element 250a and the other light emitting element 250b are disposed via an interlayer film 207. In addition, the partition wall 240 is formed between the first electrode 251a of one light emitting element 250a and It is formed between the first electrodes 251b of the other light emitting element 250b (see FIG. 8(A)). .

[0205] An SOI substrate was used as the substrate 200. The SOI substrate was made of non-alkali glass having a thickness of 0.7 mm. A 100 nm thick silicon oxide film is formed on the surface of the silicon substrate, and a 50 nm thick single crystal silicon film is then deposited on the silicon oxide film. The substrate 200 was used to form a single crystal silicon layer. The transistor has a channel forming region in the single crystal silicon layer. In preparation for the 300 nm region, a 40 nm silicon oxynitride film is used as the gate insulating film, and a 30 nm tantalum nitride layer and The gate electrode is made of a 70 nm tungsten layer. The regions to which impurities are added, which are formed on both sides of the channel forming region, are called source electrodes and drain electrodes. The transistor has a 50 nm silicon oxynitride film as a sealing film, and On top of that, a 280 nm silicon nitride oxide film and a 600 nm silicon oxynitride film are provided as insulating films.

[0206] On the insulating film, a 100 nm titanium layer, a 900 nm aluminum layer, and a 100 nm The wiring layer is made of a titanium layer and a metal layer laminated in this order. The polyimide film is formed as an interlayer film 207 covering the wiring layer (see FIG. 8(A)). ).

[0207] The first electrode 251a of the light emitting element 250a is made of 200 nm aluminum-titanium alloy. A gold film and a 6 nm thick titanium film are laminated on top of it to form a reflective electrode. A 90 nm thick indium tin oxide (ITSO) film containing silicon oxide was deposited as an alignment layer. It is layered.

[0208] The first electrode 251b of the other light emitting element 250b is made of 200 nm aluminum-tin. A titanium alloy film is laminated on top of which a titanium film with a thickness of 6 nm is layered.

[0209] The partition wall 240 has an opening that overlaps the first electrode 251a and the first electrode 251b. The electrode 251a and the end of the first electrode 251b are covered with a polyimide film having a thickness of 1.4 μm. It is being done.

[0210] <Configuration of Layer Containing Light-Emitting Organic Compound> FIG. 8C shows the structure of the layer 253 containing a light-emitting organic compound. The layer 253 is made up of two EL layers (a first EL layer 1503a and a second EL layer 1503b) sandwiching an intermediate layer (1504). The device has a structure in which two EL layers 1503b are provided (also called a tandem structure).

[0211] The first EL layer 1503a is formed by disposing a hole injection layer 1511, a first hole transport layer 1512, and a second hole transport layer 1513 on the first electrode 251. layer 1512, a first light-emitting layer 1513, a first electron transport layer 1514a, and a second electron transport layer 1515b. The first and second layers 1514a and 1514b are provided in this order.

[0212] The intermediate layer 1504 is formed by forming an electron injection buffer 1504a, an electron transfer buffer 1504b, an electron transport layer 1504c, and an electron transport layer 1504d on the electron transport layer 1504b. 1504b, a charge generation region 1504c, and a charge generation layer 1504c, in that order.

[0213] The second EL layer 1503b is formed by forming a second hole transport layer 1522, a second light emitting layer 1523, and a second hole transport layer 1524 on the intermediate layer 1504. A third light emitting layer 1523a, a third light emitting layer 1523b, a third electron transport layer 1524a, a fourth electron transport layer a transport layer 1524b, and an electron injection layer 1525, in that order.

[0214] The details of the materials constituting the EL layer are shown in Table 1. [Table 1]

[0215] The second electrode 252 is a 70 nm indium tin oxide film on a 15 nm silver-magnesium alloy film. The silver-magnesium alloy film was laminated with a weight ratio of 1 It was formed by co-evaporation at a ratio of 0:1 (Ag:Mg).

[0216] The structural formulae of some of the organic compounds used in this embodiment are shown below.

[0217] [ka]

[0218] [ka]

[0219] (Production of light-emitting panels) Next, a method for manufacturing the light-emitting panel 290 will be described.

[0220] First, a silicon oxide film with a thickness of 100 nm is formed on a glass substrate, and then a single crystal silicon layer is formed on the silicon oxide film. A SOI substrate is formed by forming a single crystal silicon layer on the SOI substrate. The transistor can be formed by a known method.

[0221] Next, a reflective film was formed on the interlayer film 207 by sputtering. A 200 nm aluminum-titanium alloy film and a 6 nm titanium film laminated on top of it are used to reflect light. It was used for the membrane.

[0222] Next, indium tin oxide containing silicon oxide (abbreviation: IT The SO film is formed by sputtering to a desired thickness as required, and The first electrode 251a of the light element 250a and the first electrode 251 of the other light emitting element 250b b was formed.

[0223] Next, openings are formed on the first electrodes of the light emitting element 250a and the other light emitting element 250b. A positive photosensitive polyimide was applied, and a photomask was used to form a partition wall 240 having the above structure. The resist was exposed to light, and unnecessary portions were removed by development. After that, the resist was baked to form the partition walls 240. The firing process is carried out by placing the substrate in a firing furnace that has been set to 250°C, and then lowering the temperature. The fired substrate was taken out without any damage.

[0224] Next, the glass substrate 200 is placed in a vacuum deposition apparatus with the surface on which the reflective film is formed facing downward. Fix the substrate to the provided substrate holder and -4 The pressure was reduced to about Pa.

[0225] Next, a hole injection layer 1511 was formed on the first electrode. 3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole ( By co-evaporating PCzPA and molybdenum oxide, organic and inorganic compounds are formed. A layer containing a composite material formed by combining a metal and a metal alloy was used. The thickness of the layer containing the composite material was set to 20 nm. The ratio of PCzPA to molybdenum oxide was 2:1 by weight (=PCzPA:molybdenum oxide). The co-evaporation method uses multiple evaporation sources in one processing chamber. This refers to a method of simultaneously depositing multiple materials.

[0226] Next, a hole transport layer 1512 was formed on the hole injection layer 1511. The hole transport layer 1512 was a resistive A film of PCzPA was formed to a thickness of 20 nm by evaporation using a heating resistor.

[0227] Next, the first light-emitting layer 1513 was formed on the hole-transporting layer 1512. is 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation (CzPA) and N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9 -phenyl-9H-fluoren-9-yl)phenyl]-pyrene-1,6-diamine (abbreviation The film was formed by co-evaporation of 1,6-mMemFLPAPrn (nominal 1,6-mMemFLPAPrn) to a thickness of 30 nm. The weight ratio of CzPA and 1,6-mMemFLPAPrn was 1:0.05 (=CzP The evaporation rate was adjusted so that the concentration was 1,6-mMemFLPAPrn.

[0228] Next, an electron transport layer was formed on the first light-emitting layer 1513. The electron transport layer was The first electron transport layer 1514a and the second electron transport layer 1514b. 5 nm of CzPA as a first electron transport layer 1514a, and bathophenanthrene as a second electron transport layer 1514b on top of that. A film of lorin (abbreviation: BPhen) was formed to a thickness of 15 nm.

[0229] Next, the electron injection buffer 1504a was formed on the electron transport layer 1514. The fur 1504a was formed by depositing calcium to a thickness of 1 nm.

[0230] Next, the electron relay layer 1504b was formed on the electron injection buffer 1504a. The layer 1504b is made of copper (II) phthalocyanine (CuPc) with a thickness of 2 nm. The film was formed as follows.

[0231] Next, the charge generation region 1504c was formed on the electron relay layer 1504b. 504c is a method for synthesizing organic and inorganic compounds by co-evaporating PCzPA and molybdenum oxide. A layer containing a composite material formed by compounding was used. The thickness of the layer containing the composite material was 30 nm. The ratio of PCzPA to molybdenum oxide was 2:1 by weight (=PCzPA:molybdenum oxide). The concentration was adjusted to 100%.

[0232] Next, a hole transport layer 1522 was formed on the charge generation region 1504c. 4-phenyl-4'-(9-phenylfluorene-9) was prepared by evaporation using resistance heating. -yl)triphenylamine (abbreviation: BPAFLP) was deposited to a thickness of 20 nm. did.

[0233] Next, the second light-emitting layer 1523a was formed on the hole-transporting layer 1522. 3a is 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoline Xaline (abbreviation 2mDBTPDBq-II), 4-phenyl-4'-(9-phenyl-9 H-Carbazol-3-yl)triphenylamine (abbreviated as PCBA1BP) and (acetonitrile) (6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: Ir(mppm)2acac) was co-evaporated to a thickness of 20 nm. The overlap of 2mDBTPDBq-II, PCBA1BP and Ir(mppm)2acac The ratio was 0.8:0.2:0.06 (=2mDBTPDBq-II:PCBA1BP:I The deposition rate was adjusted so that r(mppm)2acac).

[0234] Next, the third light-emitting layer 1523b was formed on the second light-emitting layer 1523a. 523b is 2mDBTPDBq-II and (dipivaloylmethanato)bis(2,3,5 -Triphenylpyrazinate)iridium(III) (abbreviation: Ir(tppr)2dpm) The layers were co-evaporated to a thickness of 20 nm. The weight ratio of r(tppr)2dpm is 1:0.02 (=2mDBTPDBq-II:Ir The deposition rate was adjusted so that the deposition rate was 2 dpm.

[0235] Next, an electron transport layer was formed on the third light-emitting layer 1523b. The third electron transport layer 1524a and the fourth electron transport layer 1524b are also included. 4a is 15 nm of 2mDBTPDBq-II, and a fourth electron transport layer 1524b is formed thereon. As the substrate, BPhen was deposited to a thickness of 15 nm.

[0236] Next, the electron injection layer 1525 was formed on the fourth electron transport layer 1524b. Lithium fluoride (LiF) as 25 was evaporated to a film thickness of 1 nm.

[0237] Finally, the second electrode 252 was formed on the electron injection layer 1525. The second electrode 252 was a resistor. Silver (Ag) and magnesium (Mg) were deposited to a thickness of 10 nm by evaporation using a thermal barrier. Then, indium tin oxide (ITO) was deposited to a thickness of 70 nm. The light-emitting panel 290 was fabricated by forming the Ag and M The deposition rate was adjusted so that the volume ratio of Ag to Mg was 10:1 (=Ag:Mg).

[0238] The light-emitting panel 290 thus obtained was placed in a nitrogen-atmosphere globe box so as not to be exposed to the atmosphere. The mixture was sealed in a box.

[0239] Next, one of the light emitting elements from the light emitting panel 290 in which the light emitting elements are arranged in a matrix is Only the column including element 250a was driven to check crosstalk to adjacent light-emitting elements. The measurements were carried out at room temperature (atmosphere maintained at 25°C).

[0240] <Evaluation Results> The thickness A1 of the layer 253 including the light-emitting organic compound in the portion overlapping the side surface of the partition wall 240 is The thickness A0 of the layer 253 containing a light-emitting organic compound in the portion in contact with the electrode 251a is set to 1 / 2 of the thickness A0. The thickness ratio (A1 / A0) was 42% (see FIG. 8(B)).

[0241] In addition, the thickness B1 of the second electrode 252 at the portion overlapping the side surface of the partition wall 240 and the thickness B2 of the first electrode 25 The ratio (B1 / B0) calculated from the thickness B0 of the second electrode 252 at the portion overlapping with 1a is 58%. and was greater than 42%, which corresponds to (A1 / A0).

[0242] The angle of the side surface of the partition wall 240 with respect to the substrate 200 was 56°.

[0243] The light emission state of the light emitting panel produced in this example was observed using an optical microscope and a CCD camera. The result is shown in FIG. 9(A). The figure shows the pixel area selected by the image signal and supplied with power by the drive circuit. The intersection of a row of blue pixels and a column of blue pixels is shown. To the left of the color pixel is a red pixel, and to the right is a green pixel. From (A), the red or green pixels adjacent to the selected blue pixel hardly emit light. Thus, the occurrence of the crosstalk phenomenon was suppressed.

[0244] In addition, the brightness captured by the CCD camera along the cutting line A1-B1 shown in FIG. The solid line in Figure 10 shows the plot against the position. The horizontal axis indicates the position information from the CCD camera. The brightness captured by the CCD camera is a relative value based on the number of pixels in the camera. The values ​​are quantified in a stepwise manner from 0 to 255 for white.

[0245] The observed brightness from relative positions (100) to (123) corresponds to blue pixels. The brightness observed from (83) to (93) is red pixels, The brightness observed from (123) to (133) corresponds to the green pixels. From the plot, it can be seen that the crosstalk phenomenon is suppressed.

[0246] (Comparative Example) <Comparison panel configuration> The comparative panel illustrated in this comparative example has the same configuration as the above-mentioned light-emitting panel except for the configuration of the partition walls. Specifically, except for the shape of the side surface of the partition wall, the substrate, the interlayer film, the light emitting element on one side, The configuration of the light-emitting element is the same. Therefore, the details of the parts having the same configuration are the same as those described above. The description on the light-emitting panel can be referred to.

[0247] The structure of the partition wall of the comparative panel will be described. The partition wall is disposed between the first electrode of one light-emitting element and the second light-emitting element. The first electrode of one light-emitting element and the second light-emitting element are electrically connected to each other. It is formed of a 1.4 μm thick polyimide film that covers the end of the first electrode of the optical element.

[0248] The method for making the barrier ribs of the comparative panel is explained below. A positive photosensitive polyimide is applied to the The film was exposed through a photomask, and unnecessary portions were removed by development. The barrier ribs were formed by exposing the film without using any of the above methods and then baking the film. The angle between the side surface of the partition wall and the substrate at the portion where the partition wall contacts the first electrode is set to a gentle angle. The baking process is carried out by placing the substrate in a baking oven set at 250°C. The substrate was then removed from the furnace without lowering the temperature. The contact can be formed at .

[0249] <Comparison results> The light emission state of the comparative panel produced in this comparative example was observed using an optical microscope and a CCD camera. The result is shown in FIG. 9(B). The figure shows the pixel area selected by the image signal and supplied with power by the drive circuit. The intersection of a row of blue pixels and a column of blue pixels is shown. To the left of the color pixel is a red pixel, and to the right is a green pixel. From (B), the red and green pixels adjacent to the selected blue pixel emit light, creating a cross. It was confirmed that the talk phenomenon was occurring.

[0250] In addition, the brightness captured by the CCD camera along the cutting line A2-B2 shown in FIG. 9(B) is The dashed line in Figure 10 shows the plot against the position. The horizontal axis represents the position information from the CCD camera. It is a relative value in terms of the camera pixel.

[0251] The observed brightness from relative positions (100) to (123) corresponds to blue pixels. However, the brightness observed from (81) to (97) is concentrated in red pixels. The brightness observed from (124) to (134) is due to the green pixels. Even though blue pixels were selected, none of them emitted light with negligible brightness. It was confirmed that crosstalk was occurring.

[0252] (Reference example) In this reference example, the materials used in the examples will be described.

[0253] <Synthesis example of 1,6mMemFLPAPrn> N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoro] (1,6mMemFL)-(phenyl)-pyrene-1,6-diamine Here is an example of synthesizing PAPrn.

[0254] [Step 1: 3-methylphenyl-3-(9-phenyl-9H-fluoren-9-yl ) Synthesis of phenylamine (abbreviation: mMemFLPA)

[0255] 9-(3-bromophenyl)-9-phenylfluorene 3.2 g (8.1 mmol), Na 2.3 g (24.1 mmol) of thorium tert-butoxide was placed in a 200 mL three-neck flask. The mixture was then poured into a flask and replaced with nitrogen. 0.9 mL (8.3 mmol) of 10% hexanediamine 0.2 mL of the dimethylformamide solution was added. The mixture was heated to 60° C. and bis(dibenzylideneacetone) ) palladium(0) 44.5 mg (0.1 mmol) was added, and the mixture was heated to 80°C. The mixture was stirred for 2.0 hours. After stirring, Florisil (Wako Pure Chemical Industries, Ltd., catalog number: 5 40-00135), Celite (Wako Pure Chemical Industries, Ltd., Catalog number: 531-168 55), and filtered through alumina with suction to obtain a filtrate. The filtrate was concentrated to obtain a solid, Silica gel column chromatography (eluent: hexane:toluene = 1:1) The product was purified and recrystallized from a mixed solvent of toluene and hexane to obtain 2.8 g of the desired white solid in a yield of 8. The synthesis scheme of step 1 above is shown below in (J-1).

[0256] [ka]

[0257] [Step 2: N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl) (phenyl-9H-fluoren-9-yl)phenyl)-pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn) synthesis method

[0258] 1,6-Dibromopyrene 0.6g (1.7mmol), 3-methylphenyl-3-(9- Phenyl-9H-fluoren-9-yl)phenylamine 1.4 g (3.4 mmol), Add 0.5 g (5.1 mmol) of sodium tert-butoxide to a 100 mL three-neck flask. The mixture was then poured into a flask and replaced with nitrogen. 0.2 mL of a 10% hexane solution of rt-butylphosphine was added. ℃, bis(dibenzylideneacetone)palladium(0) 34.9 mg (0.1 mmol) l) was added, and the mixture was heated to 80° C. and stirred for 3.0 hours. After stirring, 400 mL of toluene was added. Add 5 mL of Florisil (Wako Pure Chemical Industries, Ltd., Catalog No.: 5 40-00135), Celite (Wako Pure Chemical Industries, Ltd., Catalog number: 531-168 55), and filtered through alumina with suction to obtain a filtrate. The filtrate was concentrated to obtain a solid, Silica gel column chromatography (eluent: hexane:toluene = 3:2) The yellow solid was purified and recrystallized from a mixed solvent of toluene and hexane. The desired yellow solid was obtained in 1.2 g in 67% yield.

[0259] The resulting yellow solid (1.0 g) was purified by train sublimation. The preparation conditions were a pressure of 2.2 Pa, argon gas was fed at a flow rate of 5.0 mL / min, and the reaction mixture was stirred for 31 h. The yellow solid was heated at 7°C. After purification by sublimation, 1.0 g of the desired yellow solid was obtained in a yield of 93%. The synthetic scheme of the above step 2 is shown below (J-2).

[0260] [ka]

[0261] Nuclear magnetic resonance (NMR) analysis confirmed that this compound was the target N,N'-bis(3-methyl Fluorenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)fluor phenyl-pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn). It was confirmed that.

[0262] The obtained compound 1 The 1 H NMR data is shown below. 1 H NMR (CDCl3,300 MHz): δ=2.21(s,6H), 6.67(d,J=7.2Hz,2H), 6.7 4(d,J=7.2Hz,2H), 7.17-7.23(m,34H), 7.62(d, J=7.8Hz,4H), 7.74(d,J=7.8Hz,2H), 7.86(d,J= 9.0Hz,2H), 8.04(d,J=8.7Hz,4H)

[0263] <Synthesis example of 2mDBTPDBq-II> 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxalate An example of synthesizing 2mDBTPDBq-II is shown below.

[0264] [Synthesis of 2mDBTPDBq-II] The synthetic scheme of 2mDBTPDBq-II is shown in (C-1).

[0265] [ka]

[0266] Add 5.3 g (20 mmol) of 2-chlorodibenzo[f,h]quinoxaline to a 2 L three-neck flask. ), 3-(dibenzothiophen-4-yl)phenylboronic acid 6.1g (20mmol) , tetrakis(triphenylphosphine)palladium(0) 460 mg (0.4 mmol) ), 300 mL of toluene, 20 mL of ethanol, and 20 mL of 2 M potassium carbonate aqueous solution were added. The mixture was degassed by stirring under reduced pressure, and the atmosphere in the flask was replaced with nitrogen. The mixture was stirred at 100°C for 7.5 hours under a nitrogen stream. After cooling to room temperature, the resulting mixture was The mixture was filtered to obtain a white residue. The residue was washed with water and then with ethanol, and then dried. The solid obtained was dissolved in about 600 mL of hot toluene and then filtered through a pad of Celite (Wako Pure Chemical Industries, Ltd.). Co., Ltd., Catalog number: 531-16855), Florisil (Wako Pure Chemical Industries, Ltd. The mixture was filtered through a filter (catalog number: 540-00135) with suction to obtain a colorless and transparent filtrate. The filtrate was concentrated and purified by silica gel column chromatography. The solid obtained here was mixed with acetone and ethanol to obtain a toluene-based elution solvent. After adding alcohol and irradiating it with ultrasound, the resulting suspension was filtered and dried, revealing the target compound. A white powder was obtained in an amount of 7.85 g and a yield of 80%.

[0267] The above target material was relatively soluble in hot toluene, but was prone to precipitation when cooled. In addition, it was poorly soluble in other organic solvents such as acetone and ethanol. By taking advantage of the difference in solubility, it was possible to synthesize the compound in a simple manner with good yield, as described above. After the reaction is complete, the mixture is cooled to room temperature and the precipitated solid is filtered out, allowing most of the impurities to be easily removed. In addition, the elution was confirmed by column chromatography using hot toluene as a developing solvent. This enabled us to easily purify even target compounds that tend to precipitate.

[0268] The resulting white powder (4.0 g) was purified by train sublimation. The white powder was heated to 300°C under the conditions of a pressure of 5.0 Pa and an argon flow rate of 5 mL / min. After purification by sublimation, 3.5 g of the target white powder was obtained in a yield of 88%.

[0269] Nuclear magnetic resonance (NMR) analysis confirmed that this compound was the target compound, 2-[3-(dibenzothio) 2mDBTPD It was confirmed that the ion exchange rate was 1.25% (Bq-II).

[0270] The obtained material 1 The 1 H NMR data is shown below. 1 H NMR (CDCl3, 300M Hz):δ(ppm)=7.45-7.52(m,2H),7.59-7.65(m,2 H),7.71-7.91(m,7H),8.20-8.25(m,2H),8.41( d,J=7.8Hz,1H),8.65(d,J=7.5Hz,2H),8.77-8. 78(m,1H),9.23(dd,J=7.2Hz,1.5Hz,1H),9.42( dd,J=7.8Hz,1.5Hz,1H),9.48(s,1H).

[0271] <Synthesis example of [Ir(mppm)2(acac)]> (Acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(I II) (abbreviation: [Ir(mppm)2(acac)]) is shown below.

[0272] [Step 1: Synthesis of 4-methyl-6-phenylpyrimidine (Hmppm)] First, 4.90 g of 4-chloro-6-methylpyrimidine, 4.80 g of phenylboronic acid, and charcoal were Sodium acetate 4.03g, bis(triphenylphosphine)palladium(II) dichloride 0.16 g of Pd(PPh3)2Cl2, 20 mL of water, 10 mL of acetonitrile The reaction vessel was filled with argon gas. The material was heated by irradiating it with microwaves (2.45 GHz, 100 W) for 60 minutes. 2.28 g of phenylboronic acid, 2.02 g of sodium carbonate, Pd(PPh3)2Cl2 0.082g, 5mL of water, and 10mL of acetonitrile were placed in a flask and microwaved again ( The solution was heated by irradiating it with a 2.45 GHz 100 W power source for 60 minutes. The extract was diluted with saturated aqueous sodium carbonate, water, The solution was then washed with saturated saline and dried over magnesium sulfate. The solvent was removed from this solution, and the resulting residue was diluted with dichloromethane:ethyl acetate=9: Purify the mixture by silica gel column chromatography using 1 (volume ratio) as the developing solvent to obtain the desired peak. The rimidine derivative Hmppm was obtained (orange oil, 46% yield). A microwave synthesis device (CEM Discover) was used for the synthesis. The synthesis scheme (b-1) is shown below.

[0273] [ka]

[0274] [Step 2; Di-μ-chloro-bis[bis(6-methyl-4-phenylpyrimidinato) Synthesis of [Iridium(III)] (abbreviation: [Ir(mppm)2Cl]2)] Next, 15 mL of 2-ethoxyethanol, 5 mL of water, and Hmppm1 obtained in step 1 above were 0.51g, iridium chloride hydrate (IrCl3·H2O) 1.26g, The flask was then filled with argon. The mixture was irradiated with a 5 GHz 100 W power source for 1 hour to cause a reaction. After the solvent was removed by distillation, the resulting residue was The binuclear complex [Ir(mppm)2Cl]2 was obtained by washing with ethanol and filtering. (Dark green powder, 77% yield). The synthetic scheme of step 2 (b-2) is shown below.

[0275] [ka]

[0276] [Step 3; (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato) Synthesis of Iridium(III) (abbreviation: [Ir(mppm)2(acac)]) Furthermore, 40 mL of 2-ethoxyethanol and the binuclear complex [Ir(mp pm)2Cl]21.84g, acetylacetone 0.48g, sodium carbonate 1.73g The mixture was placed in a recovery flask equipped with a reflux condenser, and the atmosphere in the recovery flask was replaced with argon. The reaction was carried out by irradiating with microwaves (2.45 GHz, 100 W) for 60 minutes. The solvent was removed by distillation. The resulting residue was dissolved in dichloromethane and filtered to remove insoluble matter. The mixture was washed with water, then with saturated saline, and dried over magnesium sulfate. The solvent was removed from this solution, and the resulting residue was diluted with dichloromethane:ethyl acetate= The product was purified by silica gel column chromatography using a 4:1 (volume ratio) developing solvent. After that, the target substance was recrystallized from a mixed solvent of dichloromethane and hexane to obtain a yellow solid. It was obtained as a powder (yield 44%). The synthesis scheme of step 3 (b-3) is shown below.

[0277] [ka]

[0278] Nuclear magnetic resonance spectroscopy of the yellow powder obtained in step 3 above ( 1 H-NMR Analysis Results The results are shown below. From these results, it was confirmed that this compound is the target (acetylacetonato)bis( 6-Methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mpp m)2(acac)]) was obtained.

[0279] 1 H-NMR.δ(CDCl3):1.78(s,6H),2.81(s,6H),5. 24(s,1H),6.37(d,2H),6.77(t,2H),6.85(t,2H ), 7.61-7.63(m,4H), 8.97(s,2H). [Explanation of symbols]

[0280] 100 Substrates 106a electrode 106b electrode 107 Insulating layer 140 Bulkhead 140a Bulkhead 140b Bulkhead 140c bulkhead 150a Light emitting element 150b Light emitting element 151a first electrode 151b First electrode 152 Second Electrode 152a Second electrode 152b Second electrode 152c Second electrode 153 Layer containing luminescent organic compound 153a Layer containing luminescent organic compound 153b Layer containing luminescent organic compound 153c Layer containing luminescent organic compound 190 EL Panel 191 Film deposition method 192 Film deposition method 193 Film deposition method 194 Film deposition method 200 Substrates 207 Interlayer Film 240 Bulkhead 250a Light emitting element 250b Light emitting element 251a First electrode 251b First electrode 252 Second Electrode 253 Layer containing luminescent organic compounds 290 Illuminating Panel 1101 Anode 1102 Cathode 1103 Light Emitting Unit 1103a Light Emitting Unit 1103b Light Emitting Unit 1104 Middle Class 1104a Electron injection buffer 1104b Electronic Relay Layer 1104c Charge generation region 1113 Hole injection layer 1114 Hole transport layer 1115 Light-emitting layer 1116 Electron transport layer 1117 Electron injection layer 1400 Light Emitting Device 1401 Source side driver circuit 1402 Pixel section 1403 Gate side drive circuit 1404 Sealing substrate 1405 Sealing material 1407 Space 1408 Wiring 1409 FPC (Flexible Printed Circuit) 1410 Element substrate 1411 Switching transistor 1412 Current control transistor 1413 First electrode 1414 Bulkhead 1416 Layer containing luminescent organic compound 1417 Second electrode 1418 Light emitting element 1423 n-channel transistor 1424 p-channel transistor 1433 Spacer 1434 Color Filter 1435 Light-shielding film 1503a EL layer 1503b EL layer 1504 Middle Class 1504a Electron Injection Buffer 1504b Electronic Relay Layer 1504c Charge generation area 1511 Hole injection layer 1512 Hole transport layer 1512a Hole transport layer 1513 Light-emitting layer 1514 Electron transport layer 1514a Electron transport layer 1514b Electron transport layer 1521 Hole transport layer 1522 Hole transport layer 1523a Light-emitting layer 1523b Light-emitting layer 1524a Electron transport layer 1524b Electron transport layer 1525 Electron injection layer 7100 Television equipment 7101 Case 7103 Display section 7105 Stand 7107 Display section 7109 Operation key 7110 Remote control device 7201 Main unit 7202 Case 7203 Display section 7204 Keyboard 7205 External connection port 7206 Pointing Device 7301 Case 7302 Case 7303 Connection section 7304 Display section 7305 Display section 7306 Speaker section 7307 Recording medium insertion section 7308 LED Lamp 7309 Operation key 7310 Connection terminal 7311 Sensor 7312 Microphone 7400 Mobile Phone 7401 Case 7402 Display section 7403 Operation button 7404 External connection port 7405 Speaker 7406 Mike 7500 Lighting Equipment 7501 Case 7503a~7503d Light emitting device

Claims

[Claim 1] A display device in which a layer containing a light-emitting organic compound and a cathode are arranged across an insulating partition wall covering an end of a first anode and an end of a second anode, the layer including the light-emitting organic compound is thinner in a region overlapping the partition wall than in a region on the first anode; the partition has a side surface that forms an angle of 55° to 100° with respect to the substrate, the layer containing the light-emitting organic compound at a lower end of the partition is thicker than that on the first anode, and includes 350 or more pixels per inch; the layer containing the light-emitting organic compound has a thickness at a portion overlapping a side surface of the partition wall that is thinner than half the thickness at a portion in contact with the first anode; A display device, wherein the spacing between adjacent light-emitting elements is 7 μm or less.

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