Semiconductor device

Abstract

To provide a semiconductor device which can suppress occurrence of defects.SOLUTION: A semiconductor device 100 includes a first conductive member 10, a second conductive member 20, a semiconductor chip 60, a conductive connection plate 40, a conductive first joint material 51, a second joint material 52 and a resin part 70. The second conductive member includes a first part 21, and a second part 22. The first part is separated in a Z direction from the first conductive member. The second part extends from an end 21e of the first part in an X direction, and includes a lead part 23. The semiconductor chip is provided between the first part and the first conductive member in the Z direction, and is electrically connected to the first conductive member. The connection plate is provided between the semiconductor chip and the first part in the Z direction. The first joint material is positioned between the semiconductor chip and the connection plate, and the second joint material is positioned between the first part and the connection plate. The resin part covers the semiconductor chip, the connection plate and the first part. A part of the lead part and a part of the first conductive member are exposed from the resin part.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] FIELD An embodiment of the present invention relates to a semiconductor device. [Background technology]

[0002] There is a semiconductor device (semiconductor package) in which a semiconductor chip is sealed. For example, conductive members including leads are connected to the semiconductor chip by a conductive bonding material such as solder. In such a semiconductor device, peeling may occur in the bonding material that electrically connects the semiconductor chip and the conductive member. For example, in the manufacturing process of the semiconductor device, the load applied from a jig is transmitted through the leads, causing peeling of the solder on the semiconductor chip. This may cause a defect that reduces the characteristics of the semiconductor device. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2008-227131 A Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a semiconductor device capable of suppressing the occurrence of defects. [Means for solving the problem]

[0005] The semiconductor device according to the embodiment includes a first conductive member, a second conductive member, a semiconductor chip, a conductive connection plate, a conductive first bonding material, a conductive second bonding material, and a resin part. The second conductive member includes a first portion and a second portion. The first portion is separated from the first conductive member in a first direction. The second direction intersects with the first direction. The second portion extends from an end of the first portion in the second direction and includes a lead portion. The semiconductor chip is provided between the first portion and the first conductive member in the first direction and is electrically connected to the first conductive member. The connection plate is provided between the semiconductor chip and the first portion in the first direction. The first bonding material is located between the semiconductor chip and the connection plate and electrically connects the semiconductor chip and the connection plate. The second bonding material is located between the first portion and the connection plate and electrically connects the first portion and the connection plate. The resin part covers the semiconductor chip, the connection plate, and the first portion. A portion of the lead portion and a portion of the first conductive member are exposed from the resin portion. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic perspective view illustrating the semiconductor device according to the first embodiment. [Diagram 2] FIG. 2 is a schematic plan view illustrating the semiconductor device according to the first embodiment. [Diagram 3] FIG. 3 is a schematic perspective view illustrating a portion of the semiconductor device according to the first embodiment. [Figure 4] FIG. 4 is a schematic plan view illustrating a portion of the semiconductor device according to the first embodiment. [Diagram 5] FIG. 5 is a schematic cross-sectional view illustrating a portion of the semiconductor device according to the first embodiment. [Figure 6] FIG. 6A is a schematic cross-sectional view illustrating a semiconductor device according to a reference example, and FIG. 6B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. [Figure 7] FIG. 7 is a graph illustrating the characteristics of the semiconductor device. [Figure 8] 8(a) to 8(c) are schematic views illustrating the manufacturing process of the semiconductor device according to the first embodiment. [Figure 9] FIG. 9 is a schematic cross-sectional view illustrating a portion of another semiconductor device according to the first embodiment. [Figure 10] FIG. 10 is a schematic plan view illustrating a portion of the semiconductor device according to the second embodiment. [Figure 11] FIG. 11 is a schematic cross-sectional view illustrating a portion of the semiconductor device according to the second embodiment. [Figure 12] 12(a) to 12(c) are schematic cross-sectional views illustrating manufacturing steps of the second conductive member according to the embodiment. [Figure 13] FIG. 13 is a schematic cross-sectional view illustrating a portion of another semiconductor device according to the second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios of each part may be different depending on the drawing. In this specification and each drawing, elements similar to those already explained are given the same reference numerals and detailed explanations are omitted as appropriate.

[0008] (First embodiment) FIG. 1 is a schematic perspective view illustrating the semiconductor device according to the first embodiment. FIG. 2 is a schematic plan view illustrating the semiconductor device according to the first embodiment. As shown in FIGS. 1 and 2, a semiconductor device 100 according to the embodiment includes a first conductive member 10, a second conductive member 20, a third conductive member 30, and a resin part .

[0009] FIG. 3 is a schematic perspective view illustrating a portion of the semiconductor device according to the first embodiment. FIG. 4 is a schematic plan view illustrating a portion of the semiconductor device according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating a portion of the semiconductor device according to the first embodiment. 3 to 5 show the internal structure of the resin part 70, without illustrating the resin part 70. Fig. 5 shows a cross section taken along line AB shown in Fig. 3.

[0010] For example, as shown in FIG. 5, the semiconductor device 100 further includes a semiconductor chip 60, a connection plate 40, a first bonding material 51, and a second bonding material 52.

[0011] The first conductive member 10 is a conductive, generally rectangular, flat plate extending along the XY plane. The second conductive member 20 includes a conductive first portion 21 and a conductive second portion 22.

[0012] In the description of the embodiment, an XYZ Cartesian coordinate system is used. The direction from the first conductive member 10 to the first portion 21 is defined as the Z direction (first direction). Two directions that are perpendicular to the Z direction and perpendicular to each other are defined as the X direction (second direction) and the Y direction (third direction). For the sake of description, the direction from the first conductive member 10 to the first portion 21 is referred to as "up" and the opposite direction is referred to as "down". These directions are based on the relative positional relationship between the first conductive member 10 and the first portion 21 and are unrelated to the direction of gravity. The Z direction is, for example, a direction perpendicular to the upper surface of the first conductive member 10.

[0013] 5, the first portion 21 is separated from the first conductive member 10 in the Z direction. The first portion 21 is a conductive flat plate extending along the XY plane. The second portion 22 extends from an end portion 21e of the first portion 21 in the X direction. The second portion 22 is conductive and includes a lead portion 23 and an intermediate portion 24.

[0014] The lead portion 23 extends in the X direction. At the tip side (opposite the first portion 21), the lead portion 23 branches into multiple terminals 23t extending in the X direction (see FIGS. 3 and 4). The intermediate portion 24 connects the lead portion 23 and the end portion 21e of the first portion 21. The intermediate portion 24 is located between the lead portion 23 and the first portion 21 in the X direction. The intermediate portion 24 slopes downward from the lead portion 23 toward the first portion 21.

[0015] The semiconductor chip 60 is located between the first conductive member 10 and the first portion 21 in the Z direction. Note that "the first element is between the second element and the third element in a certain direction" means, in other words, that the position of the first element in that direction is between the position of the second element in that direction and the position of the third element in that direction. The semiconductor chip 60 is electrically connected to the first conductive member 10.

[0016] In this example, the semiconductor chip 60 is a semiconductor chip including a vertical MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). For example, as shown in FIG. 5, the semiconductor chip 60 has an electrode 61 provided on the bottom surface of the semiconductor chip 60. The electrode 61 is, for example, a drain electrode of the MOSFET. The electrode 61 is formed on the entire bottom surface of the semiconductor chip 60.

[0017] For example, a conductive bonding material (e.g., solder) (not shown) is provided between the first conductive member 10 and the electrode 61. This bonding material contacts the first conductive member 10 and the electrode 61, and electrically connects the first conductive member 10 and the electrode 61.

[0018] The connection plate 40 is located between the semiconductor chip 60 and the first portion 21 in the Z direction. The connection plate 40 is conductive and has a flat plate shape extending along the XY plane. As shown in FIG. 5, the connection plate 40 has a lower surface 40b and an upper surface 40t. The lower surface 40b contacts the first bonding material 51. The upper surface 40t contacts the second bonding material 52.

[0019] Between the upper surface 40t and the lower surface 40b of the connecting plate 40, no members other than the connecting plate 40, such as the resin part 70, are disposed. That is, the connecting plate 40 is continuous from the upper surface 40t to the lower surface 40b between the upper surface 40t and the lower surface 40b. In other words, the connecting plate 40 is continuous in the Z direction from the upper surface 40t to the lower surface 40b in a range where the upper surface 40t and the lower surface 40b overlap in the Z direction.

[0020] Note that the plate (flat plate) may not only have a shape in which the surface (upper surface 40t, lower surface 40b, etc.) is flat, but may also have a shape in which projections and recesses are provided on the surface.

[0021] The first bonding material 51 is located between the semiconductor chip 60 and the connection plate 40. The first bonding material 51 is conductive and electrically connects the semiconductor chip 60 and the connection plate 40. The first bonding material 51 contacts the semiconductor chip 60 and the connection plate 40.

[0022] More specifically, the first bonding material 51 contacts an electrode 62 (see FIG. 4) of the semiconductor chip 60 and the connection plate 40. As shown in FIG. 4, an electrode 62 and an electrode 63 are provided on a part of the upper surface of the semiconductor chip 60. The area of ​​the electrode 62 is larger than the area of ​​the electrode 63. The electrode 62 is, for example, a source electrode of a MOSFET, and the electrode 63 is, for example, a gate electrode of the MOSFET.

[0023] 5, the second bonding material 52 is located between the first portion 21 and the connection plate 40. The second bonding material 52 is conductive and electrically connects the first portion 21 and the connection plate 40. The second bonding material 52 contacts the first portion 21 and the connection plate 40.

[0024] 4, the planar shape of the first portion 21 is substantially the same as the planar shape of the electrode 62. More specifically, in the planar view of FIG. 4, an outer edge 21g of the first portion 21 is located inside an outer edge 62g of the electrode 62 and extends along the outer edge 62g of the electrode 62. The area of ​​the first portion 21 is smaller than the area of ​​the electrode 62.

[0025] Like the planar shape of the first portion 21, the planar shapes of the connecting plate 40, the first bonding material 51, and the second bonding material 52 are each substantially the same as the planar shape of the electrode 62. In a plan view, like the outer edge 21g of the first portion 21, the outer edge of the connecting plate 40, the outer edge of the first bonding material 51, and the outer edge of the second bonding material 52 are each located inside the outer edge 62g of the electrode 62 and extend along the outer edge 62g of the electrode 62.

[0026] The planar shapes of the connecting plate 40, the first bonding material 51, and the second bonding material 52 may each be the same as the planar shape of the first portion 21. In a plan view, the outer edge of the connecting plate 40, the outer edge of the first bonding material 51, and the outer edge of the second bonding material 52 may each be at the same position as the outer edge of the first portion 21.

[0027] 3 and 4, the third conductive member 30 includes a connection portion 31 and a lead portion 33 electrically connected to the connection portion 31. A conductive bonding material (e.g., solder) (not shown) is provided between the electrode 63 and the connection portion 31. This bonding material is in contact with the electrode 63 and the connection portion 31, and electrically connects the electrode 63 and the connection portion 31. The lead portion 33 is aligned with the lead portion 23 in the Y direction and extends in the X direction.

[0028] The semiconductor chip 60, the first bonding material 51, the connection plate 40, the second bonding material 52, the first portion 21 and the connection portion 31 that are stacked in this manner are covered with the resin portion 70 shown in FIGS.

[0029] 1, the resin part 70 has a top surface 70t, a side surface 70p, a side surface 70q, a side surface 70r, and a side surface 70s. The side surface 70q faces in the X direction. The side surface 70p faces in the opposite direction to the side surface 70q. The side surface 70s faces in the Y direction. The side surface 70r faces in the opposite direction to the side surface 70s.

[0030] Terminal 23t of lead portion 23 of second conductive member 20 protrudes from side surface 70p. Terminal 23t extends from side surface 70p in the opposite direction to the X-direction. Resin portion 70 covers intermediate portion 24 (see FIG. 3, etc.) of second conductive member 20, but does not cover terminal 23t of lead portion 23.

[0031] Similarly, the resin portion 70 covers the connection portion 31 of the third conductive member 30. The lead portion 33 of the third conductive member 30 protrudes from the side surface 70p.

[0032] 1 and 2, an end 10e of the first conductive member 10 in the X direction extends in the X direction from a side surface 70q. The resin part 70 does not cover the end 10e. In addition, the resin part 70 does not cover a lower surface 10b (see FIG. 1) of the first conductive member 10.

[0033] A recess 71 (groove) is provided in the center of the side surface 70r in the X direction. An end 10ta in the Y direction of the top surface 10t of the first conductive member 10 is exposed from the resin part 70 at the recess 71. The recess 71 extends in the Z direction from the top surface 70t of the resin part 70 to the end 10ta of the top surface 10t.

[0034] Similarly, a recess 72 (groove) is provided in the center of the side surface 70s in the X direction. An end 10tb (see FIG. 2) of the top surface 10t of the first conductive member 10 opposite the end 10ta in the Y direction is exposed from the resin part 70 at the recess 72. The recess 72 extends in the Z direction from the top surface 70t of the resin part 70 to the end 10tb of the top surface 10t.

[0035] For example, end 10ta of top surface 10t is the upper surface of protrusion 11 (see FIG. 4) of first conductive member 10. As shown in FIG. 4, protrusion 11 is provided on side surface 10r of first conductive member 10. For example, end 10tb of top surface 10t is the upper surface of protrusion 12 (see FIG. 4) of first conductive member 10. As shown in FIG. 4, protrusion 12 is provided on side surface 10s of first conductive member 10. Note that side surface 10s is a side surface facing in the Y direction, and side surface 10r is a side surface facing the opposite side to side surface 10s.

[0036] The resin portion 70 covers the first conductive member 10 except for the end portion 10e, the end portion 10ta, the end portion 10tb, and the lower surface 10b.

[0037] An example of the material of each element of the semiconductor device 100 will be described. A metal material containing at least one of copper, iron, and nickel is used for the first conductive member 10, the second conductive member 20, and the third conductive member 30. The metal material used for each conductive member may contain, for example, an alloy of copper and iron, or an alloy of iron and nickel. A metal material containing at least one of, for example, copper, iron, and nickel is used for the connection plate 40. The metal material used for the connection plate 40 may contain, for example, an alloy of copper and iron, or an alloy of iron and nickel. The first bonding material 51 and the second bonding material 52 include, for example, solder. The semiconductor chip 60 includes a semiconductor substrate including a semiconductor material. Examples of the semiconductor material include silicon, silicon carbide, gallium nitride, and gallium arsenide. The semiconductor substrate may include n-type impurities (e.g., arsenic or phosphorus) and p-type impurities (e.g., boron). For example, the electrical resistivity of the semiconductor substrate is higher than the electrical resistivity of each of the first conductive member 10, the second conductive member 20, and the third conductive member 30. Each of the electrodes 61, 62, and 63 provided on the semiconductor chip 60 includes at least one metal material selected from the group consisting of aluminum, nickel, and copper.

[0038] The operation of the semiconductor device 100 will now be described. For example, a positive voltage is applied to the electrode 61 (drain electrode) of the semiconductor chip 60 with respect to the electrode 62 (source electrode) via the first conductive member 10. The on / off of the transistor is controlled by a voltage applied to the electrode 63 (gate electrode) via the third conductive member 30. When the voltage of the electrode 63 with respect to the electrode 62 exceeds a threshold voltage, the transistor formed in the semiconductor chip 60 is turned on. As a result, an on-current of the transistor flows from the first conductive member 10 to the lead portion 23 via the electrode 61, the electrode 62, the first bonding material 51, the connection plate 40, the second bonding material 52, and the first portion 21. When the voltage of the electrode 63 with respect to the electrode 62 is equal to or lower than the threshold, the transistor is turned off and the on-current does not flow.

[0039] Although the semiconductor chip 60 includes a MOSFET, the semiconductor element included in the semiconductor chip 60 is not limited to this. For example, the semiconductor chip 60 may include an IGBT (Insulated Gate Bipolar Transistor). The electrode 61 may be a collector electrode of the IGBT, the electrode 62 may be an emitter electrode of the IGBT, and the electrode 63 may be a gate electrode of the IGBT.

[0040] According to the present embodiment, it is possible to suppress the occurrence of defects in the semiconductor device 100, such as an increase in on-resistance, by suppressing the occurrence of peeling in the first bonding material 51. It is possible to reduce the risk of occurrence of defects, such as an increase in on-resistance. A force may be applied to the lead portion 23 and the first conductive member 10 to pull the lead portion 23 and the first conductive member 10 away from each other in the Z direction. For example, as described below, in the manufacturing process of the semiconductor device 100, before the semiconductor chip 60 is sealed by the resin part 70, the first conductive member 10 may be pressed downward in a state in which the position of the lead portion 23 is fixed to the mold. When such a force is applied, peeling may occur in the second bonding material 52. That is, the second bonding material 52 may peel off from the connection plate 40 or the first portion 21.

[0041] As described above, the lead portion 23 extends in the X direction in the second portion 22 extending from the end of the first portion 21. When a force is applied to pull the lead portion 23 and the first conductive member 10 away from each other in the Z direction in a state where the position of the lead portion 23 is fixed, the second bonding material 52 and the second conductive member 20 are likely to peel off in, for example, the region R (the end 52e of the second bonding material 52 on the lead portion 23 side) shown in FIG. 5. When peeling occurs in the second bonding material 52 in this way, the force applied to the first bonding material 51 is alleviated, so that peeling in the first bonding material 51 can be suppressed. For example, the second bonding material 52 is sacrificed to peel off, so that the load is absorbed and peeling in the first bonding material 51 is suppressed.

[0042] By suppressing the occurrence of peeling in the first bonding material 51, it is possible to suppress the occurrence of defects in the semiconductor device 100, such as an increase in on-resistance. This will be described with reference to FIGS. 6(a), 6(b), and 7.

[0043] FIG. 6A is a schematic cross-sectional view illustrating a semiconductor device according to a reference example, and FIG. 6B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. In a semiconductor device 190 of a reference example shown in Fig. 6(a), a connection plate 40 and a second bonding material 52 are not provided. In the semiconductor device 190, an electrode 62 of a semiconductor chip 60 is electrically connected to a first portion 21 of a second conductive member 20 by a first bonding material 51. A semiconductor device 101 according to an embodiment shown in Fig. 6(b) is provided with a first conductive member 10, a semiconductor chip 60, a first bonding material 51, a connection plate 40, a second bonding material 52, and a second conductive member 20, similar to the semiconductor device 100 described above.

[0044] As shown in Fig. 6(a), the on-resistance is calculated when peeling occurs at the end r51 of the first bonding material 51 of the semiconductor device 190 on the lead portion 23 side. As shown in Fig. 6(b), the on-resistance is calculated when peeling occurs at the end r52 of the second bonding material 52 of the semiconductor device 101 on the lead portion 23 side. The peeled width Wp is the length in the X direction of the area where each bonding material has peeled off. The calculation results are shown in Fig. 7.

[0045] FIG. 7 is a graph illustrating the characteristics of the semiconductor device. Fig. 7 illustrates the increase rate of the on-resistance when peeling occurs, relative to the on-resistance when no peeling occurs (Wp = 0), where Fig. 7 shows the cases where the peeling width Wp is 0 mm, 0.25 mm, 0.5 mm, 0.75 mm, and 1.0 mm.

[0046] 7, for example, when the peel width Wp is 0.25 mm, the increase rate of the on-resistance in the semiconductor device 190 is 1.72%, and the increase rate of the on-resistance in the semiconductor device 101 is 0.49%. For example, when the peel width Wp is 1.0 mm, the increase rate of the on-resistance in the semiconductor device 190 is 17.18%, and the increase rate of the on-resistance in the semiconductor device 101 is 2.71%. In this way, in the embodiment, it is possible to suppress an increase in the on-resistance when peeling occurs in the bonding material. Therefore, it is possible to reduce the risk of occurrence of defects.

[0047] For example, in the semiconductor device 190 of the reference example, when peeling occurs in the first bonding material 51, the path through which the current flows from the semiconductor chip 60 to the first bonding material 51 becomes narrower. This increases the on-resistance. On the other hand, in the semiconductor device 101, even if peeling occurs in the second bonding material 52, the path through which the current flows from the semiconductor chip 60 to the first bonding material 51 does not become narrower. When peeling occurs in the second bonding material 52, for example, the path through which the current flows from the connection plate 40 to the second bonding material 52 becomes narrower. When the path of the current to the second bonding material 52 becomes narrower, for example, the path through the connection plate 40 becomes longer because the current flows to the second bonding material 52. Here, since the connection plate 40 is conductive, the effect of the current path becoming longer is considered to be relatively small. This is considered to be able to suppress the increase in the on-resistance.

[0048] 8(a) to 8(c) are schematic views illustrating the manufacturing process of the semiconductor device according to the first embodiment. 8(a) to 8(c) are schematic side views illustrating a molding process in which the joined semiconductor chip 60 and the like (the first conductive member 10, the semiconductor chip 60, the connection plate 40, and the second conductive member 20) are sealed with a resin part 70.

[0049] 8(a), the bonded semiconductor chip 60 and the like are placed above a lower mold M1. The lower mold M1 includes a lower portion M1a and a protruding portion M1b extending upward from the lower portion M1a. The second conductive member 20 and the semiconductor chip 60 are placed above the lower portion M1a. The lead portion 23 contacts the upper surface of the protruding portion M1b.

[0050] 8(b), the upper mold M2 is placed above the bonded semiconductor chip 60, etc. In other words, the bonded semiconductor chip 60, etc. are placed between the lower mold M1 and the upper mold M2.

[0051] The upper mold M2 includes an upper part M2a, a protruding part M2b, and a protruding part M2c. The protruding part M2b and the protruding part M2c each extend downward from the upper part M2a. A part of the first conductive member 10, the semiconductor chip 60, the connection plate 40, and the first part 21 are disposed below the upper part M2a. That is, the part of the first conductive member 10, the semiconductor chip 60, the connection plate 40, and the first part 21 are disposed in the space between the lower part M1a and the upper part M2a.

[0052] The lead portion 23 contacts the lower surface of the protrusion M2b. In other words, the lead portion 23 is sandwiched between the protrusions M1b and M2b, and the position of the lead portion 23 is fixed. Furthermore, the lower end of the protrusion M2c of the upper mold M2 contacts the end 10ta of the upper surface 10t of the first conductive member 10. Similarly, another protrusion M2c (not shown) of the upper mold M2 contacts the end 10tb (see FIG. 2) of the upper surface 10t of the first conductive member 10.

[0053] Then, the mold is clamped. That is, the upper mold M2 presses the bonded semiconductor chip 60 and the like against the lower mold M1. The first conductive member 10 may be pushed downward at the end 10ta and end 10tb by the convex portion M2c of the upper mold M2, and move downward. As a result, for example, the lower surface 10b of the first conductive member 10 contacts the lower portion M1a of the lower mold M1. On the other hand, the lead portion 23 does not move because it is already sandwiched between the lower mold M1 (convex portion M1b) and the upper mold M2 (convex portion M2b). In this way, a force is applied to the lead portion 23 and the first conductive member 10 to pull the lead portion 23 and the first conductive member 10 away from each other in the Z direction. As a result, for example, peeling occurs in the second bonding material 52. For example, peeling is likely to occur when the distance in the Z direction between the lead portion 23 and the first conductive member 10 becomes shorter due to manufacturing variations or the like.

[0054] 8(b), a resin material is injected into the space between the lower portion M1a and the upper portion M2a to form the resin portion 70. Thereafter, as shown in FIG 8(c), the lower mold M1 and the upper mold M2 are separated from the resin portion 70 to manufacture the semiconductor device 100.

[0055] Thus, in the manufacturing process of the semiconductor device 100, the first conductive member 10 may be pressed downward relative to the lead portion 23. In such a case, peeling may occur in the second bonding material 52. Even if peeling occurs in the second bonding material 52, the first portion 21 and the connection plate 40 above and below the second bonding material 52 allow current to flow easily, so that an increase in the on-resistance can be suppressed. This can reduce, for example, the defective rate of the product.

[0056] For example, the strength of the second bonding material 52 that bonds the first portion 21 and the connecting plate 40 is lower than the strength of the first bonding material 51 that bonds the semiconductor chip 60 and the connecting plate 40. This makes the second bonding material 52 more susceptible to peeling than the first bonding material 51. The strength (resistance to breakage) of the bonding material is confirmed, for example, by a tensile strength test. For example, in a test of a bonding material that bonds two bonded materials, one bonded material is pulled in the Z direction relative to the other bonded material so as to separate them, and the force at which the bonding material breaks is measured.

[0057] For example, the composition of the second bonding material 52 is different from the composition of the first bonding material 51. This allows the strength of each bonding material to be adjusted. For example, the strength of the second bonding material 52 can be made lower than the strength of the first bonding material 51. As an example, the second bonding material 52 contains lead. The second bonding material 52 contains, for example, lead solder (Pb5Sn). The first bonding material 51 contains, for example, lead-free solder (Sn 3.0 Ag 0.5 Alternatively, the lead concentration (mass % concentration) in the first bonding material 51 is lower than the lead concentration (mass % concentration) in the second bonding material 52.

[0058] FIG. 9 is a schematic cross-sectional view illustrating a portion of another semiconductor device according to the first embodiment. Fig. 9, like Fig. 5, illustrates a cross section of a portion of the semiconductor device 102. The semiconductor device 102 differs from the semiconductor device 100 illustrated in Fig. 5 in the arrangement of the second bonding material 52 and the first portion 21.

[0059] 9, the connection plate 40 has an end 40e and an end 40f in the X direction. The end 40e is an end on the lead portion 23 side. That is, in the X direction, the end 40e is located between at least a part of the lead portion 23 and the end 40f.

[0060] In this example, the second bonding material 52 does not contact the end 40e of the connection plate 40. For example, the solder forming the second bonding material 52 is not applied up to the end 40e on the lead portion 23 side of the connection plate 40. This makes it possible to suppress the load applied to the end 51e of the first bonding material 51 on the lead portion 23 side, for example, when a load is applied to the end 52e of the second bonding material 52. The occurrence of peeling in the first bonding material 51 can be further suppressed.

[0061] The first bonding material 51 contacts the end 40e of the connection plate 40. For example, the solder forming the first bonding material 51 is applied up to the end 40e on the lead portion 23 side of the connection plate 40. This can prevent the first bonding material 51 from peeling off.

[0062] The first bonding material 51 and the second bonding material 52 each contact the end 40f of the connecting plate 40. That is, for example, on the opposite side of the lead portion 23, the solder forming the first bonding material 51 and the second bonding material 52 is applied up to the end 40f of the connecting plate 40. This makes it possible to suppress peeling of the first bonding material 51 and the second bonding material 52 on the opposite side of the lead portion 23.

[0063] For example, the width in the X direction of the first bonding material 51 is approximately the same as the width in the X direction of the connecting plate 40. The width in the X direction of the second bonding material 52 is narrower than the width in the X direction of the connecting plate 40. The width in the X direction of the first portion 21 may be approximately the same as the width in the X direction of the second bonding material 52, or may be wider than the width in the X direction of the second bonding material 52.

[0064] Second embodiment FIG. 10 is a schematic plan view illustrating a portion of the semiconductor device according to the second embodiment. FIG. 11 is a schematic cross-sectional view illustrating a portion of the semiconductor device according to the second embodiment. FIG. 11 shows a cross section taken along line CD shown in FIG. 10 and 11 also includes a first conductive member 10, a semiconductor chip 60, a first bonding material 51, a second conductive member 20, a third conductive member 30, and a resin part 70 (not shown), similar to the semiconductor device 100. In the semiconductor device 103, the shape of the second conductive member 20 is different from that of the semiconductor device 100. In the semiconductor device 103, the connection plate 40 and the second bonding material 52 are not provided.

[0065] In this example, the first bonding material 51 is located between the second conductive member 20 (first portion 21) and the semiconductor chip 60, and electrically connects the second conductive member 20 and the semiconductor chip 60. The first bonding material 51 contacts the first portion 21 and the semiconductor chip 60. The resin portion 70, not shown, is formed by the same manufacturing process as described with reference to FIGS. 8(a) to 8(c), and covers a portion of the first conductive member 10, the semiconductor chip 60, the first bonding material 51, and the second conductive member 20 (other than the lead portion 23).

[0066] As shown in FIG. 11, the second conductive member 20 includes a first portion 21, a lead portion 23, a first folded portion 25, and a second folded portion .

[0067] The first portion 21 extends in the X direction and includes an end 21e and an end 21f in the X direction. The end 21e is the end on the lead portion 23 side. That is, in the X direction, the end 21e is located between at least a part of the lead portion 23 and the end 21f.

[0068] The lead portion 23 includes a front end portion 23e and a rear end portion 23f, and extends in the X direction. The rear end portion 23f is spaced apart from the front end portion 23e in the X direction. The rear end portion 23f is located between the front end portion 23e and the first portion 21 in the X direction.

[0069] The first folded portion 25 includes an end 25a and an end 25b. The end 25b is separated from the end 25a. The end 25a is continuous with the rear end 23f of the lead portion 23. The first folded portion 25 is folded back from the X direction in the folding direction Df. That is, the first folded portion 25 extends from the end 25a in the X direction, folds back in the folding direction Df, and extends to the end 25b. For example, at least a part of the first folded portion 25 is aligned (overlapped) with a part of the first portion 21, a part of the semiconductor chip 60, and a part of the first bonding material 51 in the Z direction. The first folded portion 25 is located between the center of the first bonding material 51 in the X direction and the lead portion 23 in the X direction.

[0070] The second folded portion 26 includes an end 26a and an end 26b. The end 26b is separated from the end 26a. The end 26a is continuous with the end 25b. The second folded portion 26 is folded back from the folding direction Df to the X direction. That is, the second folded portion 26 extends from the end 26a in the folding direction Df, folds back in the X direction, and extends to the end 26b. The end 21e of the first portion 21 is continuous with the end 26b. For example, at least a part of the second folded portion 26 is aligned (overlapped) with a part of the lead portion 23, a part of the semiconductor chip 60, and a part of the first bonding material 51 in the Z direction. At least a part of the second folded portion 26 is located closer to the tip portion 23e of the lead portion 23 than the first folded portion 25.

[0071] As shown in FIG. 11, the angle θ between the X direction and the folding direction Df is, for example, greater than 90° and equal to or smaller than 180°.

[0072] In this example, the cross-sectional shape of the second conductive member 20 is Z-shaped. For example, as shown in FIG. 11, the first folded portion 25 has a first surface f1 and a second surface f2. The first surface f1 is aligned along the X direction. The second surface f2 extends in the folding direction Df from an end f1e of the first surface f1 in the X direction. At the end f1e, the angle between the first surface f1 and the second surface f2 is an acute angle. Similarly, the second folded portion 26 is also folded back at an acute angle.

[0073] According to the present embodiment, it is possible to suppress the occurrence of defects in the semiconductor device 100, such as an increase in on-resistance, by suppressing the occurrence of peeling in the first bonding material 51. It is possible to reduce the risk of occurrence of defects, such as an increase in on-resistance. As described above, the second conductive member 20 includes the first folded portion 25 and the second folded portion 26. When the first conductive member 10 is pressed down by a die with the position of the lead portion 23 fixed, the load is absorbed by the first folded portion 25 and the second folded portion 26. This can reduce the load on the end portion 51e of the first bonding material 51. Peeling of the first bonding material 51 can be suppressed. The risk of defects, such as an increase in on-resistance, can be reduced.

[0074] 12(a) to 12(c) are schematic cross-sectional views illustrating manufacturing steps of the second conductive member according to the embodiment. For example, the second conductive member 20 is a single metal plate P1 folded at a first folded portion 25 and a second folded portion 26. In other words, the lead portion 23, the first folded portion 25, the second folded portion 26, and the first portion 21 are a continuous, integrated conductive member and are made of the same material.

[0075] For example, as shown in Fig. 12(a), one metal plate P1 is prepared. As shown in Fig. 12(b), grooves g1 and g2 extending in the Y direction are provided on the upper and lower surfaces of the metal plate P1, respectively. The grooves g1 and g2 each have a bottom gb and two side surfaces gc1 and gc2 that intersect at the bottom gb. The angle φ between the side surfaces gc1 and gc2 is greater than 90°.

[0076] 12(c), the metal plate P1 is bent at the groove g2 to form a first folded portion 25. The metal plate P1 is bent at the groove g1 to form a second folded portion .

[0077] FIG. 13 is a schematic cross-sectional view illustrating a portion of another semiconductor device according to the second embodiment. A semiconductor device 104 shown in FIG. 13 differs from the semiconductor device 103 in the shape of the second conductive member 20.

[0078] In this example, the cross-sectional shape of the second conductive member 20 is S-shaped. For example, the first folded portion 25 has a curved shape that is convex in the X direction. The second folded portion 26 has a curved shape that is convex in the direction opposite to the X direction.

[0079] In this example, the folding direction Df is opposite to the X direction, that is, the angle between the X direction and the folding direction Df is 180°.

[0080] In the semiconductor device 104 as well, the load received from the mold is absorbed by the first folded portion 25 and the second folded portion 26. This reduces the load on the end portion 51e of the first bonding material 51. It is possible to prevent peeling from occurring in the first bonding material 51. It is possible to reduce the risk of defects, such as an increase in on-resistance.

[0081] The embodiment may include the following features. (Configuration 1) A first conductive member; a second conductive member including a first portion separated from the first conductive member in a first direction and a second portion including a lead portion extending from an end of the first portion in a second direction intersecting the first direction; a semiconductor chip provided between the first portion and the first conductive member in the first direction and electrically connected to the first conductive member; a conductive connection plate provided between the semiconductor chip and the first portion in the first direction; a conductive first bonding material located between the semiconductor chip and the connection plate and electrically connecting the semiconductor chip and the connection plate; a conductive second bonding material located between the first portion and the connection plate and electrically connecting the first portion and the connection plate; a resin portion covering the semiconductor chip, the connection plate, and the first portion, wherein a portion of the lead portion and a portion of the first conductive member are exposed from the resin portion; A semiconductor device comprising: (Configuration 2) the connection plate includes an end portion in the second direction located on the lead portion side, 2. The semiconductor device according to claim 1, wherein the second bonding material does not contact the end of the connection plate. (Configuration 3) 3. The semiconductor device according to claim 2, wherein the first bonding material is in contact with the end of the connection plate. (Configuration 4) 4. The semiconductor device according to any one of configurations 1 to 3, wherein the second bonding material has a lower strength than the first bonding material. (Configuration 5) 5. The semiconductor device according to any one of configurations 1 to 4, wherein the second bonding material has a composition different from a composition of the first bonding material. (Configuration 6) The second bonding material contains lead, 6. The semiconductor device according to configuration 5, wherein the first bonding material does not contain lead, or the concentration of lead in the first bonding material is lower than the concentration of lead in the second bonding material. (Configuration 7) A first conductive member; a first portion extending in a second direction intersecting the first direction and away from the first conductive member; a lead portion including a front end portion and a rear end portion spaced apart from the front end portion in the second direction, the lead portion extending in the second direction; a first folded portion that is at least partially aligned with the first portion in the first direction, continues from the rear end of the lead portion, and is folded back in a folding direction from the second direction; a second folded portion that is continuous with the first folded portion, folded back from the folding direction to the second direction, and extends to an end of the first portion in the second direction; A second conductive member including: a semiconductor chip disposed between the first portion and the first conductive member in the first direction and electrically connected to the first conductive member; a conductive bonding material provided between the semiconductor chip and the first portion, the conductive bonding material being in contact with the semiconductor chip and the first portion to electrically connect the semiconductor chip and the first portion; A semiconductor device comprising: (Configuration 8) 8. The semiconductor device according to claim 7, wherein the first folded portion has a curved shape that is convex in the second direction. (Configuration 9) The first folded portion has a first surface along the second direction and a second surface extending in the folded direction from an end of the first surface in the second direction, 8. The semiconductor device according to configuration 7, wherein the angle between the first surface and the second surface is an acute angle. (Configuration 10) 10. The semiconductor device according to any one of configurations 7 to 9, wherein the second conductive member is a single metal plate folded at the first folded portion and the second folded portion.

[0082] According to the embodiment, it is possible to provide a semiconductor device capable of suppressing the occurrence of defects.

[0083] In this specification, "electrically connected" includes connection through direct contact as well as connection via other conductive members.

[0084] Although some embodiments of the present invention have been illustrated above, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, modifications, etc. can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the scope of the invention and its equivalents described in the claims. In addition, the above-mentioned embodiments can be implemented in combination with each other. [Explanation of symbols]

[0085] 10: First conductive member 10b: Bottom surface 10e: End 10r, 10s: Side 10t:Top surface 10ta, 10tb: end 11, 12: Convex 12: Convex 20: Second conductive member 21: Part 1 21e, 21f: End 21g: Outer edge 22:Second part 23: Lead section 23e:Tip 23f: Rear end 23t:Terminal 24: Middle section 25: First fold 25a, 25b: End 26: Second fold 26a, 26b: End 30: Third conductive member 31: Connection 33: Lead section 40: Connection plate 40b: Bottom surface 40e, 40f: End 40t:Top surface 51:First bonding material 51e: End 52:Second bonding material 52e: End 60: Semiconductor chips 61, 62, 63: Electrode 62g: Outer edge 70: Resin part 70p, 70q, 70r, 70s: side 70t:Top surface 71, 72: Recess 100-104, 190: Semiconductor device Df: Folding direction M1: Lower mold M1a: Lower part M1b: Convex part M2: Upper mold M2a: Upper part M2b, Mc2: convex part P1: Metal plate Wp: peel width f1: side 1 f1e:end f2: Side 2 g1, g2: groove gb: bottom GC1, GC2: Side r51, r52: end θ, φ: Angle

Claims

1. A first conductive member; a second conductive member including a first portion spaced apart from the first conductive member in a first direction and a second portion including a lead portion extending from an end of the first portion in a second direction intersecting the first direction; a semiconductor chip provided between the first portion and the first conductive member in the first direction and electrically connected to the first conductive member; a conductive connection plate provided between the semiconductor chip and the first portion in the first direction; a conductive first bonding material located between the semiconductor chip and the connection plate and electrically connecting the semiconductor chip and the connection plate; a conductive second bonding material located between the first portion and the connection plate and electrically connecting the first portion and the connection plate; a resin portion covering the semiconductor chip, the connection plate, and the first portion, wherein a portion of the lead portion and a portion of the first conductive member are exposed from the resin portion; A semiconductor device comprising:

2. the connection plate includes an end portion in the second direction located on the lead portion side, The semiconductor device according to claim 1 , wherein the second bonding material is not in contact with the end of the connection plate.

3. The semiconductor device according to claim 2 , wherein the first bonding material is in contact with the end of the connection plate.

4. 4. The semiconductor device according to claim 1, wherein the second bonding material has a lower strength than the first bonding material.

5. 4. The semiconductor device according to claim 1, wherein the second bonding material has a composition different from a composition of the first bonding material.

6. The second bonding material contains lead, The semiconductor device according to claim 5 , wherein the first bonding material does not contain lead, or the concentration of lead in the first bonding material is lower than the concentration of lead in the second bonding material.

7. A first conductive member; a first portion spaced apart from the first conductive member in a first direction and extending in a second direction intersecting the first direction; a lead portion including a tip portion and a rear end portion spaced apart from the tip portion in the second direction, the lead portion extending in the second direction; a first folded portion that is at least partially aligned with the first portion in the first direction, continues from the rear end of the lead portion, and is folded back in a folding direction from the second direction; a second folded portion that is continuous with the first folded portion, folded back from the folded direction to the second direction, and extends to an end of the first portion in the second direction; A second conductive member including: a semiconductor chip provided between the first portion and the first conductive member in the first direction and electrically connected to the first conductive member; a conductive bonding material provided between the semiconductor chip and the first portion, the conductive bonding material being in contact with the semiconductor chip and the first portion to electrically connect the semiconductor chip and the first portion; A semiconductor device comprising:

8. The semiconductor device according to claim 7 , wherein the first folded portion has a curved shape that is convex in the second direction.

9. The first folded portion has a first surface along the second direction and a second surface extending in the folded direction from an end of the first surface in the second direction, The semiconductor device according to claim 7 , wherein the angle between said first surface and said second surface is an acute angle.

10. 10. The semiconductor device according to claim 7, wherein the second conductive member is a single metal plate folded at the first folded portion and the second folded portion.

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