Substrate processing device

Abstract

To provide a substrate processing device and a substrate processing method that can remove the remaining process liquid on a counter surface of a plate and keep the cleanliness of the plate.SOLUTION: A substrate processing device 1 includes a rotator 10 that rotates a substrate W held by a holding unit 30, a process liquid supply unit 411 that supplies a process liquid to a process surface of the substrate W, a plate 50 that is provided at a position facing the process surface, a heating unit 60 that is provided at the plate 50 and heats the process liquid supplied to the process surface of the substrate W, and a cleaning unit 90 that cleans a counter surface 51 of the plate 50 that faces the process surface. The cleaning unit 90 includes a liquid supply unit that supplies a clean liquid to the counter surface 51, a wiping unit 93 that wipes off the clean liquid supplied by the liquid supply unit in contact with the counter surface 51, a column that rotatably supports the wiping unit 93 rotatably using a shaft extending in a direction parallel to the counter surface 51 as a rotation axis, and a moving mechanism 95 that moves the wiping unit 93 along the counter surface 51.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus. [Background technology]

[0002] As a wet etching apparatus for etching a film laminated on a substrate such as a semiconductor wafer using a processing liquid, there is a batch-type substrate processing apparatus in which multiple substrates are immersed in the processing liquid at once. Such a batch-type substrate processing apparatus has high productivity because it can process multiple substrates at once.

[0003] However, in a batch-type substrate processing apparatus, multiple substrates are immersed in a processing solution with common conditions, and it is difficult to finely adjust the etching depth, etc. for each substrate according to differences in the film thickness, etc. formed on each substrate. Therefore, a single-wafer type substrate processing apparatus is used in which a processing solution for etching is supplied near the center of rotation of the processing surface of the substrate while rotating the substrate, and the processing solution is spread over the processing surface of the substrate to process the substrate one by one.

[0004] As the processing liquid for etching, an acid liquid such as hydrofluoric acid, phosphoric acid, or sulfuric acid is used. For example, when etching a nitride film on a substrate having an oxide film and a nitride film stacked thereon, there is a substrate processing apparatus that uses an aqueous solution of phosphoric acid (phosphoric acid solution) as the processing liquid. The higher the temperature of the phosphoric acid solution, the higher the etching rate, and when the temperature of the phosphoric acid solution drops, the etching rate drops. Therefore, in order to obtain a desired etching rate, the phosphoric acid solution must be maintained at a high temperature. For example, the phosphoric acid solution is heated to 150°C to 160°C and supplied to the substrate to etch the nitride film.

[0005] However, substrates such as silicon wafers have high thermal conductivity. As a result, the phosphoric acid solution supplied to the surface of the substrate to be treated loses heat through the substrate, and the temperature is likely to drop. In other words, the phosphoric acid solution supplied near the center of rotation is maintained at a high temperature, but as it moves toward the outer periphery of the substrate, the temperature of the phosphoric acid solution drops due to heat dissipation.

[0006] If the temperature of the phosphoric acid solution differs depending on the position on the substrate surface, the etching rate differs depending on the position on the substrate, making it difficult to uniformly process the entire substrate surface. To address this issue, there is a substrate processing apparatus that performs etching while maintaining the temperature of the phosphoric acid solution on the substrate surface (see Patent Document 1).

[0007] This substrate processing apparatus has a plate with a built-in heater facing the surface of the substrate, and the plate is brought close to the surface of the substrate to supply high-temperature phosphoric acid solution to the surface of the substrate. The distance between the substrate and the plate is about several millimeters, and the phosphoric acid solution flows over the surface of the substrate while being heated by the plate. This makes it possible to maintain the etching rate of the phosphoric acid solution.

[0008] However, in the treatment process of Patent Document 1, the treatment liquid is supplied to the surface of the substrate to be treated while the plate is in close proximity to the substrate, so the treatment liquid adheres to the opposing surface of the plate that faces the surface of the substrate to be treated. The treatment liquid remaining on the opposing surface of the plate becomes a source of particle generation when it dries.

[0009] To address this issue, there is a substrate processing apparatus provided with a cleaning unit that removes the processing liquid remaining on the opposing surface of the plate by jetting compressed air or using a soft object such as a sponge (Patent Document 2). [Prior art documents] [Patent documents]

[0010] [Patent Document 1] International Publication No. 2011 / 090141 [Patent Document 2] JP 2004-259734 A Summary of the Invention [Problem to be solved by the invention]

[0011] However, when the remaining processing liquid is removed by jetting compressed air, there is a risk that droplets of the processing liquid or cleaning liquid remaining on the opposing surface of the plate will be scattered by the ejection of gas. In addition, there is a risk that the attached droplets will lower the temperature of the opposing surface of the plate until the droplets are removed from the opposing surface of the plate by the ejection of gas, that is, until the droplets are moved to the outside of the opposing surface of the plate. On the other hand, when the droplets on the opposing surface of the plate are removed by a soft object such as a sponge, there is a risk that precipitates generated by drying of the processing liquid will remain on the opposing surface of the plate.

[0012] An embodiment of the present invention has been proposed to solve the problems described above, and its object is to provide a substrate processing apparatus capable of removing processing liquid remaining on the opposing surface of a plate and maintaining the cleanliness of the plate. [Means for solving the problem]

[0013] A substrate processing apparatus according to an embodiment of the present invention includes a rotating body that rotates a substrate held by a holding unit, a processing liquid supply unit that supplies a processing liquid to a processing surface of the substrate, a plate provided at a position opposite the processing surface, a heating unit provided on the plate that heats the processing liquid supplied to the processing surface of the substrate, and a cleaning unit that cleans an opposing surface of the plate that faces the processing surface, the cleaning unit including a liquid supply unit that supplies cleaning liquid to the opposing surface, a wiping unit that contacts the opposing surface and wipes off the cleaning liquid supplied by the liquid supply unit, a support pillar that supports the wiping unit rotatably around an axis extending in a direction parallel to the opposing surface as a rotation axis, and a moving mechanism that moves the wiping unit along the opposing surface. Effect of the Invention

[0014] The embodiment of the present invention can remove residual processing liquid on the opposing surface of the plate, thereby maintaining the cleanliness of the plate. [Brief description of the drawings]

[0015] [Figure 1]1 is an overall configuration diagram showing a state in which a plate of a substrate processing apparatus according to an embodiment is in a standby position; [Diagram 2] 2 is an overall configuration diagram showing a substrate processing state of the substrate processing apparatus of FIG. 1. [Diagram 3] 2 is an overall configuration diagram showing a state in which a plate is cleaned by a cleaning unit of the substrate processing apparatus of FIG. 1. FIG. [Figure 4] 2 is an overall configuration diagram showing a substrate cleaning state of the substrate processing apparatus of FIG. 1. [Diagram 5] FIG. [Figure 6] 6 is a cross-sectional view taken along line AA in FIG. 5, showing the cleaning unit. [Figure 7] 6 is a cross-sectional view taken along line BB in FIG. 5 showing the cleaning unit. [Figure 8] 6 is a cross-sectional view taken along line CC in FIG. 5 showing the cleaning unit. [Figure 9] 13 is a bottom view showing the cleaning operation by the cleaning unit. FIG. [Figure 10] 4 is a flowchart showing a processing procedure of the substrate processing apparatus according to the embodiment. [Figure 11] FIG. 11 is a cross-sectional view showing a cleaning part of another embodiment (wherein a support post is provided on one end side of the wiping part, and adjustment parts are provided on both ends of the wiping part). [Figure 12] FIG. 11 is a cross-sectional view showing a cleaning part of another embodiment (wherein the adjustment part is a movable pin). [Figure 13] 13 is a cross-sectional view showing a cleaning unit of another embodiment (wherein a support post is provided on one end side of the wiping unit and an adjustment unit is provided on the other end side of the wiping unit). FIG. [Figure 14] FIG. 11 is a cross-sectional view showing a cleaning unit of another embodiment (wherein a support pillar is provided at the center of the wiping unit and one adjustment unit is provided).

[0016] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. [overview] 1 and 2, the substrate processing apparatus 1 of this embodiment processes one surface (hereinafter referred to as the surface to be processed) of the substrate W by supplying a processing liquid Le heated in a supply unit 40 to the surface to be processed of the substrate W while rotating the substrate W together with a rotor 10. At this time, as shown in Fig. 2, the drive unit 80 brings a plate 50 having a heating unit 60 close to the surface to be processed of the substrate W and narrows the space between the plate 50 and the substrate W, thereby making it difficult for heat to escape and heating the substrate, thereby suppressing a drop in temperature of the processing liquid Le. The plate 50 is capable of moving forward and backward relative to the substrate W without coming into contact with the substrate W.

[0017] 3, the substrate processing apparatus 1 raises the plate 50 to a position separated from the substrate W, and while supplying the cleaning liquid Lp to the facing surface 51 facing the substrate W by the cleaning unit 90, wipes off the cleaning liquid Lp together with the processing liquid Le from the facing surface 51, thereby suppressing a decrease in temperature of the plate 50. Then, as shown in FIG. 4, with the plate 50 separated from the substrate W, the cleaning liquid Lw is supplied from the supply unit 40 to the processing surface of the rotating substrate W, thereby cleaning the processing surface of the substrate W.

[0018] The substrate W to be processed in this embodiment is, for example, a silicon wafer having a nitride film formed thereon, and the processing liquid Le for processing the substrate W is, for example, phosphoric acid (H 3 PO 4 ) (hereinafter referred to as phosphoric acid solution) is used. Furthermore, pure water (DIW) is used as the cleaning liquid Lw for cleaning the substrate W. Preheated warm pure water may also be used as the cleaning liquid Lw. Note that the cleaning liquid Lw is not limited to pure water. For example, hydrofluoric acid (aqueous solution of hydrogen fluoride) may also be used.

[0019] [composition] The substrate processing apparatus 1 includes a rotating body 10, a rotating mechanism 20, a holding section 30, a supply section 40, a plate 50, a heating section 60, a detection section 70, a driving section 80, a cleaning section 90, and a control section 100, as shown in FIGS.

[0020] (rotating body) The rotating body 10 rotates the substrate W held by the holder 30. The rotating body 10 has a table 11 that faces the substrate W held by the holder 30 with a gap therebetween. The rotating body 10 has a cylindrical shape with one end closed by the table 11. The table 11 has a circular surface with a diameter larger than that of the substrate W.

[0021] The rotating body 10 is formed of a material that is resistant to the treatment liquid Le. For example, the rotating body 10 is preferably made of a fluorine-based resin such as PTFE (Polytetrafluoroethylene) or PCTFE (Polychlorotrifluoroethylene). Although not shown, the rotating body 10 is provided on a fixed base that is fixed to an installation surface or a stand installed on the installation surface, so as to be rotatable by a rotation mechanism 20, which will be described later.

[0022] A cup 12 is provided around the rotor 10. The cup 12 is a cylindrical body that is bent so that the diameter at the top is narrowed. A drainage port 12a is provided at the bottom of the cup 12 for draining the processing liquid Le and the cleaning liquid Lw. The cup 12 receives various processing liquids Le and cleaning liquids Lw that are scattered from the rotating substrate W around the substrate W. The processing liquids Le and cleaning liquids Lw received by the cup 12 are discharged through the drainage port 12a into a recovery path (not shown).

[0023] (Rotation mechanism) The rotation mechanism 20 is a mechanism for rotating the rotating body 10. The rotation mechanism 20 has a driving source 21. The driving source 21 is a hollow motor that is fixed to a fixed base and has a hollow rotor and a stator that rotates the hollow rotor. The driving source 21 rotates the rotating body 10 together with the rotor by passing electricity through the coil of the stator.

[0024] (holding part) The holding unit 30 holds the substrate W parallel to and spaced from the table 11. The holding unit 30 has a holding pin 31. The holding pin 31 is eccentrically rotated about an axis parallel to the axis of the rotor 10 by a drive mechanism (not shown) to move between a holding position where it contacts the edge of the substrate W to hold the substrate W and a release position where it moves away from the edge of the substrate W to release the substrate W.

[0025] (Supply Department) 2, the supply unit 40 supplies a processing liquid Le or a cleaning liquid Lw to a surface to be processed of the substrate W, that is, a surface of the substrate W held by the holder 30 opposite to a surface facing the table 11. The supply unit 40 has a processing liquid supply unit 411 that supplies the processing liquid Le and a cleaning liquid supply unit 412 that supplies the cleaning liquid Lw.

[0026] The processing liquid supply unit 411 supplies a phosphoric acid solution as the processing liquid Le. The cleaning liquid supply unit 412 supplies pure water as the cleaning liquid Lw. The processing liquid supply unit 411 and the cleaning liquid supply unit 412 each have a liquid tank 41a for storing the processing liquid Le and the cleaning liquid Lw, respectively.

[0027] Each liquid tank 41a is connected to a supply pipe 41b. A tip of the supply pipe 41b faces the substrate W held by the holder 30. Thus, the processing liquid Le from each liquid tank 41a is supplied to the processing surface of the substrate W through the supply pipe 41b.

[0028] Each supply pipe 41b is provided with a valve 41c and a flowmeter 41d. The valve 41c has a flow rate adjustment function and an ON / OFF function. Each valve 41c adjusts the amount of the processing liquid Le and the cleaning liquid Lw flowing from the corresponding liquid tank 41a to the supply pipe 41b. A valve 41e is further provided on the supply pipe 41b through which the cleaning liquid Lw flows from the liquid tank 41a of the cleaning liquid supply unit 412 toward the substrate W. The valve 41e has a flow rate adjustment function and an ON / OFF function. The valve 41e adjusts the discharge amount of the cleaning liquid Lw before the discharge port 50a described later. The amount of the processing liquid Le and the cleaning liquid Lw flowing through each supply pipe 41b is detected by the corresponding flowmeter 41d. The generating equipment and the generating method of the processing liquid Le and the cleaning liquid Lw stored in each liquid tank 41a are not limited to a specific one.

[0029] (plate) The plate 50 is a member provided at a position facing the surface to be processed of the substrate W, and is movable in a direction toward and away from the substrate W. The surface of the plate 50 facing the substrate W and the table 11 is the facing surface 51. The plate 50 is a disk, and its bottom surface forms the circular, flat facing surface 51. The facing surface 51 is concentric with the center of rotation of the substrate W, and has a larger diameter than the substrate W. In other words, the facing surface 51 is sized to cover the entire surface to be processed of the substrate W without contacting it. The plate 50 is made of quartz. A flange 50b that expands outward is formed on the upper periphery of the plate 50.

[0030] The plate 50 may have a double structure to achieve both heat resistance and liquid resistance. That is, the base may be formed of a heat-resistant material, and the periphery may be covered with a material that is resistant to the treatment liquid Le. For example, the plate 50 may be formed by forming a cover of a fluorine-based resin such as PTFE or PCTFE around the base made of quartz.

[0031] The plate 50 has two discharge ports 50a through which the tips of the two supply pipes 41b are inserted and exposed on the side of the substrate W. The two discharge ports 50a are offset from the axis of rotation of the rotating body 10. This is because, as the substrate W rotates, the portions of the substrate W facing the discharge ports 50a change successively, thereby contributing to uniforming the temperature of the processing liquid Le.

[0032] (heating part) The heating unit 60 is provided on the plate 50 and heats the processing liquid Le supplied to the processing surface of the substrate W. The heating unit 60 in this embodiment is a heater 61 that generates heat by energization. A plurality of heaters 61 are provided at different positions in the horizontal direction of the plate 50. For example, the heater 61 is composed of, for example, three heater pieces whose heat generation amount can be individually controlled. That is, as shown in FIG. 9, three annular heater pieces with different diameters are arranged concentrically. With such a heater 61, the heat generation amount of the three heater pieces arranged concentrically can be individually controlled to change the temperature of the heater 61 for each concentric part, and the temperature distribution of the processing liquid Le can be changed. Note that the diameter of the heating unit 60 is preferably a size that covers the substrate W, that is, a diameter equal to or larger than the diameter of the substrate W, in order to suppress a temperature drop on the outer periphery side of the substrate W. Note that, "heating the processing liquid Le supplied to the processing surface of the substrate W" includes a mode in which the substrate W is heated and the processing liquid Le is indirectly heated via the substrate W.

[0033] (Detection unit) The detection unit 70 detects the temperature of the plate 50. For example, a thermocouple, a resistance temperature detector, or the like can be used as the detection unit 70. The detection unit 70 is provided in the heating unit 60 built into the plate 50. A plurality of detection units 70 are provided at different positions in the radial direction of the plate 50. For example, the detection unit 70 is provided in three locations corresponding to the three heater pieces of the heater 61.

[0034] (Drive unit) The driving unit 80 is a mechanism for moving the plate 50 forward and backward relative to the substrate W. The driving unit 80 has a support unit 81, an arm 82, and an advance / retract mechanism 83. The support unit 81 is a ring-shaped member into which the plate 50 is inserted and which supports the plate 50 horizontally by abutting the flange 50b on the upper part of the support unit 81. The arm 82 is a member extending horizontally and one end of which is fixed to the support unit 81.

[0035] The advancing / retreating mechanism 83 is a mechanism that is erected on a stand and moves the plate 50 via the arm 82 in a direction toward and away from the substrate W. The advancing / retreating mechanism 83 of the present embodiment has a movable part that moves in a direction parallel to the axis of the rotating body 10, and the other end of the arm 82 is attached to the movable part. The advancing / retreating mechanism 83 can be implemented by various mechanisms that move a movable part, such as a cylinder or a ball screw mechanism, but details will be omitted.

[0036] The advance / retract mechanism 83 moves the plate 50 to a standby position, a cleaning position, and a processing position. As shown in FIG. 1, the standby position is a position where the gap between the opposing surface 51 and the rotor 10 allows the substrate W to be loaded and unloaded. As shown in FIG. 3, the cleaning position is a position where the gap between the opposing surface 51 and the rotor 10 allows the cleaning part 90 to be inserted and the contact part 93a to come into contact with the opposing surface 51. As shown in FIG. 4, the cleaning position is a position where the cleaning liquid Lw supplied to the substrate W does not adhere to the opposing surface 51.

[0037] 2, the processing position is a position where the processing liquid Le is circulated between the facing surface 51 and the processing surface, and the processing surface is processed while being heated by the heating unit 60. In this embodiment, the plate 50 is lowered to a position where a gap d is formed between the processing surface of the substrate W and the plate 50. This gap d is, for example, 4 mm or less, but is maintained so that a gap of about 2 mm is provided between the processing liquid Le and the plate 50.

[0038] The processing liquid Le is heated to a preset temperature by a heating device (not shown) in the supply unit 40, and is then supplied to the substrate W and heated by the heating unit 60. This allows the processing liquid Le supplied to the substrate W to spread over the entire processing surface of the substrate W while maintaining the preset temperature. In particular, by setting the heater 61 on the outer periphery to a high temperature, an effect of raising the temperature on the outer periphery of the substrate W, which is prone to temperature drops, can be obtained.

[0039] (Cleaning section) The cleaning unit 90 cleans the facing surface 51 facing the surface to be processed of the plate 50. The cleaning unit 90 cleans the facing surface 51 between the plate 50 and the rotating body 10 on which the substrate W is held by the holder 30. That is, the cleaning unit 90 of the present embodiment cleans the facing surface 51 of the plate 50 at a cleaning position that is located at the same position in the horizontal direction as a processing position for processing the substrate W.

[0040] As shown in Figs. 5 to 9, the cleaning unit 90 has a support 91, a liquid supply unit 92, a wiping unit 93, a liquid receiving unit 94, a moving mechanism 95, a support 96, and an adjustment unit 97. Note that the wiping unit 93, which will be described later, is omitted in Fig. 5. As shown in the plan view of Fig. 5, the support 91 is a rod-shaped member arranged parallel to the opposing surface 51 of the plate 50. The support 91 supports a liquid supply unit 92, which will be described later. The longitudinal direction of the support 91 is longer than the diameter of the opposing surface 51. The support 91 is formed of a heat-resistant and liquid-resistant material, for example, PEEK (Poly Ether Ether Ketone).

[0041] The liquid supply unit 92 supplies the cleaning liquid Lp to the opposing surface 51. As shown in FIG. 5, the liquid supply unit 92 has a plurality of supply ports 92a arranged in a direction parallel to the opposing surface 51. As shown in FIG. 7, the supply ports 92a are provided between a pair of wiping units 93 (described later) arranged in parallel to the wiping units 93, and are nozzles that spray pure water, which is the cleaning liquid Lp, toward the opposing surface 51. The plurality of supply ports 92a are arranged at equal intervals. Therefore, the liquid supply unit 92 can spray the cleaning liquid Lp evenly in a linear direction.

[0042] As shown in FIG. 3, the supply port 92a is connected to the liquid tank 41a of the cleaning liquid supply unit 412, and is connected to the liquid tank 41a via a branch pipe 92b from a supply pipe 41b. A valve 92c is provided in the branch pipe 92b. The valve 92c has a flow rate adjustment function and an ON / OFF function. The valve 92c controls the supply and stop of the cleaning liquid Lp, the ejection height and the ejection amount of the cleaning liquid Lp. The cleaning liquid Lp is not limited to pure water. For example, hydrofluoric acid (aqueous solution of hydrogen fluoride) may be used. The cleaning liquid Lp may be different from the cleaning liquid Lw supplied by the supply unit 40. In this way, when the cleaning liquid Lp to be supplied is different from the cleaning liquid Lw, a cleaning liquid supply unit that supplies the cleaning liquid Lp is provided separately from the cleaning liquid supply unit 412 that is supplied to the substrate W.

[0043] As shown in FIG. 3, the wiping unit 93 comes into contact with the opposing surface 51 to wipe off the cleaning liquid Lp supplied by the liquid supply unit 92. The wiping unit 93 also comes into contact with the opposing surface 51 to wipe off the cleaning liquid Lp together with the processing liquid Le. The wiping unit 93 extends in a direction parallel to the opposing surface 51 and has a length tangent to the entire length of the opposing surface 51. The entire length of the opposing surface 51 referred to here is the diameter of the circular opposing surface 51. In other words, the longitudinal direction of the wiping unit 93 is longer than the diameter of the opposing surface 51. The wiping unit 93 is provided so as to be movable by a moving mechanism 95 described later, and is provided in front of and behind the liquid supply unit 92 in the moving direction. In other words, a pair of wiping units 93 is provided parallel to the longitudinal direction of the support 91, sandwiching a plurality of supply ports 92a arranged in the longitudinal direction of the support 91. In this embodiment, the wiping portion 93 reciprocates by swinging in one direction and then swinging in the opposite direction, but the front and rear wiping portions 93 are reversed when swinging in one direction and then swinging in the opposite direction.

[0044] As shown in Figs. 6 and 7, each of the pair of wiping parts 93 has a contact part 93a, a cover part 93b, and a backup part 93c. The contact part 93a is deformed to conform to the opposing surface 51 and contacts it. As a result, the contact part 93a in contact with the opposing surface 51 can conform to the opposing surface 51 over its entire length and contact it even if either or both of the opposing surface 51 and the wiping part 93 have a slight inclination or distortion and are not completely parallel. The contact part 93a in this embodiment is a mesh-like member. The contact part 93a is formed of a fluororesin mesh. The cover part 93b has a U-shaped cross section, is a member that covers the backup part 93c, and supports the contact part 93a. The contact part 93a is supported so as to cover the cover part 93b. Therefore, the contact part 93a faces the opposing surface 51 with a curved surface and contacts the opposing surface 51 near the apex of the curved surface.

[0045] The mesh used in the contact portion 93a is a sheet-like member and can be easily replaced. If the mesh deteriorates or accumulates particles wiped off from the opposing surface 51 after a certain number of uses, it can be replaced immediately, preventing the mesh from becoming a particle source.

[0046] The cover portion 93b has elasticity, and when the contact portion 93a is pressed against and contacts the opposing surface 51, it deforms together with the contact portion 93a. Since the contact portion 93a is a sheet-like member, the amount of deformation of the contact portion 93a alone is limited. In contrast, in this embodiment, the contact portion 93a is supported by the backup portion 93c via the deformable cover portion 93b, and therefore the amount of deformation of the contact portion 93a can be made larger and the contact portion 93a can be brought into close contact with the opposing surface 51, compared to when the contact portion 93a is directly supported by the backup portion 93c.

[0047] The wiping portion 93 is provided with a backup portion 93c, as shown in the cross-sectional view of Fig. 6. The backup portion 93c is a rod-shaped member having an elliptical cross section, extending in a direction parallel to the opposing surface 51, and having a length in the longitudinal direction equal to or greater than the diameter of the opposing surface 51. The backup portions 93c are provided in a pair at positions sandwiching the liquid supply portion 92. The backup portions 93c are formed from a heat-resistant and liquid-resistant material, for example, PEEK (Poly Ether Ether Ketone).

[0048] The backup portion 93c directly or indirectly supports the contact portion 93a and the cover portion 93b. As shown in Fig. 8, a bearing portion 93e that fits with a support post 96 (described later) is provided at the longitudinal center of the backup portion 93c. The bearing portion 93e is a semicircular recess. By fitting the bearing portion 93e with the support post 96, the wiping portion 93 is supported rotatably around the support post 96 extending in a direction parallel to the opposing surface 51 as a rotation axis.

[0049] The liquid receiving section 94 receives the cleaning liquid Lp from the liquid supply section 92 and the wiping section 93, and prevents it from falling onto the substrate W. As shown in Figs. 5 to 8, the liquid receiving section 94 is a box-shaped member in which the support 91 is housed. The liquid receiving section 94 is a rectangular parallelepiped container with an open top, and the support 91 is disposed inside the liquid receiving section 94 so as to form a gap into which the cleaning liquid Lp falling from the wiping section 93 flows. As shown in Fig. 5, the liquid receiving section 94 is provided with a discharge hole 94a and a discharge pipe 94b for discharging the cleaning liquid Lp. The discharge pipe 94b is a pipe connected to the discharge hole 94a provided in the lower part of the liquid receiving section 94, and is connected to a drainage flow path (not shown). Note that it is preferable that the height of the upper end of the side surface of the liquid receiving section 94 is higher than the supply port 92a, since this can reduce scattering and leakage of the cleaning liquid Lp.

[0050] The moving mechanism 95 moves the liquid supply unit 92 and the wiping unit 93 along the facing surface 51. The moving mechanism 95 has an arm 95a and a swinging unit 95b. The arm 95a is a member extending in a direction parallel to the facing surface 51, and one end of the liquid receiving unit 94 is attached to one end of the arm 95a.

[0051] The swinging portion 95b is provided at a position away from the opposing surface 51, and swings the wiping portion 93 along a circular arc path that has an axis at an end portion to which the other end of the arm 95a is attached. More specifically, the swinging portion 95b swings the wiping portion 93 back and forth parallel to the opposing surface 51 from a retracted position away from the opposing surface 51 in a plan view, through a portion that faces the outer periphery of the opposing surface 51, to a turn-back position outside the opposing surface 51, and then moves in the opposite direction to return to the retracted position.

[0052] The swinging part 95b has a support shaft extending from the other end of the arm 95a in a direction perpendicular to the facing surface 51, and a motor (not shown) that is a drive source for swinging the arm 95b about the support shaft. The arm 95a is positioned at a retracted position when cleaning of the facing surface 51 is not performed. The moving mechanism 95 supports the wiping part 93 at a height at which it contacts the facing surface 51 of the plate 50 in the cleaning position.

[0053] As shown in Figs. 5, 6 and 8, the support 96 is a round bar-shaped member provided at the center of the wiping portion 93 in the longitudinal direction. As shown in Fig. 6, the support 96 is supported by the upper part of the support 91 and the inner surface of the liquid receiving portion 94, and it is preferable to provide a gap between the support 96 and the bottom surface of the liquid receiving portion 94. The cleaning liquid Lp dropping from the wiping portion 93 flows into this gap, and the cleaning liquid Lp can be easily drained into the drain hole 94a and the drain pipe 94b. As shown in Fig. 8, the support 96 supports the wiping portion 93 so that it can rotate about an axis extending in a direction parallel to the facing surface 51 as a rotation axis. That is, the support 96 fits into the bearing portion 93e in a rotatable state and supports the wiping portion 93 so that the wiping portion 93 rotates about the support 96 as a fulcrum and comes into contact with the facing surface 51 in parallel.

[0054] The adjustment portion 97 adjusts the opposing surface 51 and the contact portion 93a of the wiping portion 93 to be in parallel contact with each other by the rotation of the wiping portion 93. The adjustment portion 97 is made of an elastic member that rotates the wiping portion 93 by elastic force. As shown in Figs. 5 and 8, the adjustment portion 97 is provided on the lower surface of the backup portion 93c at both ends of each wiping portion 93. The adjustment portion 97 is provided with an inclined portion 97a and a fixed portion 97b. The inclined portion 97a is a plate-shaped member that is inclined from the lower surface of the backup portion 93c toward the bottom surface of the liquid receiving portion 94. The inclined portion 97a is disposed at a position where its upper end portion can be brought into contact with and separated from the lower surface of the backup portion 93c. The fixed portion 97b fixes the lower end portion of the inclined portion 97a. As shown in Fig. 7, the fixed portion 97b is supported by the side surface of the support 91 and the inner side surface and bottom surface of the liquid receiving portion 94. Moreover, it is preferable that the adjustment portion 97 is provided with a gap between the lower end of the inclined portion 97a and the bottom surface of the liquid receiving portion 94. The cleaning liquid Lp dropping from the wiping portion 93 flows into this gap, and the cleaning liquid Lp can be easily drained into the drain hole 94a and the drain pipe 94b.

[0055] (Control unit) The control unit 100 controls each unit of the substrate processing apparatus 1. The control unit 100 has a processor that executes a program to realize various functions of the substrate processing apparatus 1, a memory that stores various information such as the program and operating conditions, and a drive circuit that drives each element. In other words, the control unit 100 has a mechanism control unit 110 that controls the rotation mechanism 20, the holding unit 30, the supply unit 40, the heating unit 60, the drive unit 80, the cleaning unit 90, etc.

[0056] The control unit 100 of this embodiment also includes a heating control unit 120. The heating control unit 120 controls the temperature of the heating unit 60 according to the temperature of the plate 50 measured by the detection unit 70. That is, the heating control unit 120 performs feedback control to control the output of the heater 61 according to the temperature of the plate 50. For example, when the average value of the temperatures measured by the multiple detection units 70 is lower than a predetermined temperature, the temperature of the heater 61 is increased. Note that, when the temperature measured by each detection unit 70 is lower than a predetermined temperature, the temperature of the heater 61 corresponding to that detection unit 70 may be increased. In this case, for example, the heaters 61 provided respectively correspond to the detection units 70.

[0057] [Operation] The operation of the substrate processing apparatus 1 of this embodiment as described above will be described with reference to the flowchart of Fig. 10 in addition to Figs. 1 to 9. Note that a substrate processing method and a substrate manufacturing method for processing a substrate W according to the following procedure are also aspects of this embodiment.

[0058] 1, the plate 50 is in an upper standby position. At this time, a gap is provided between the plate 50 and the table 11 so that a substrate W supported by a hand of a transport robot (not shown) can be carried in.

[0059] Moreover, by previously passing electricity through the heater 61 of the heating unit 60, the facing surface 51 of the plate 50 is heated and maintained at a predetermined temperature (for example, within a temperature range of 180° C. to 225° C.). Note that, for example, since the temperature of the outer periphery region of the substrate W drops the most due to heat dissipation, the heater 61 of the outer periphery region may be heated to a higher temperature than other regions.

[0060] In this state, the substrate W mounted on the hand of the transport robot is carried in between the plate 50 and the rotating body 10, and its edges are supported by the holding pins 31, so that it is held on the table 11 of the rotating body 10 (step S01). At this time, the substrate W is positioned so that its center coincides with the axis of rotation of the rotating body 10.

[0061] The rotor 10 rotates at a relatively slow predetermined speed (e.g., about 50 rpm). This causes the substrate W to rotate together with the holder 30 at the predetermined speed (step S02). Then, as shown in FIG. 2, the plate 50 descends to a processing position where a predetermined gap d (e.g., 4 mm or less) is formed between the plate 50 and the processing surface of the substrate W (step S03).

[0062] The processing liquid supply unit 411 supplies the processing liquid Le to the processing surface of the substrate W, and the detection unit 70 starts measuring the temperature of the plate 50 (step S04). While the processing liquid Le is being supplied, temperature measurement is performed at all times. As described above, the processing liquid Le is preheated in the supply unit 40. As the processing liquid Le moves sequentially toward the outer periphery of the rotating substrate W, the pure water on the processing surface of the substrate W is replaced by the phosphoric acid solution of the processing liquid Le, and the nitride film is removed by etching.

[0063] The processing liquid Le supplied near the center of the substrate W loses heat more easily as it moves toward the outer periphery of the substrate W, but in this embodiment, the plate 50 is located close to the substrate W by the distance d, so that the processing liquid Le is heated by the heater 61, and a decrease in the processing rate due to a drop in temperature is suppressed. For example, the temperature of the phosphoric acid solution, which is the processing liquid Le, is preferably maintained at about 150 to 160°C.

[0064] The temperature of the plate 50 during processing is measured by the detection unit 70 as described above. The heating control unit 120 controls the temperature of the heaters 61 in accordance with the measured temperature. That is, when the average value of the temperature detected by the detection unit 70 is decreasing, the temperatures of all the heaters 61 are increased. Alternatively, the temperatures of the heaters 61 in the area where the temperature detected by the detection unit 70 is decreasing are increased.

[0065] When a predetermined processing time has elapsed (YES in step S05), the processing liquid supply unit 411 stops supplying the processing liquid Le (step S06). Next, as shown in FIG. 3, the plate 50 is raised to a cleaning position above the processing position (step S07).

[0066] 9, the swinging unit 95b of the moving mechanism 95 swings the arm 95a to reciprocate the wiping unit 93, thereby performing a cleaning process of wiping the opposing surface 51 (step S08). That is, the supply port 92a of the liquid supply unit 92 swings together with the wiping unit 93 in contact with the opposing surface 51 while discharging the cleaning liquid Lp. The wiping unit 93 moves from the outside of the opposing surface 51 to the outside of the opposing surface 51, wiping the entire opposing surface 51, thereby wiping off the cleaning liquid Lp together with the processing liquid Le from the opposing surface 51.

[0067] When the entire wiping portion 93 is brought closer to the opposing surface 51 in order to wipe off the processing liquid Le and the cleaning liquid Lp from the opposing surface 51, if the wiping portion 93 is inclined with respect to the opposing surface 51, the wiping portion 93 will be inclined and the portion closer to the opposing surface 51 will come into contact with the opposing surface 51 first. When the wiping portion 93 is then brought even closer to the opposing surface 51, the adjustment portion 97 on the side that contacts the opposing surface 51 elastically deforms, preventing the wiping portion 93 in contact with the opposing surface 51 from coming any closer to the opposing surface 51. When the entire wiping portion 93 is brought even closer to the opposing surface 51 in this state, only the side of the wiping portion 93 that is away from the opposing surface 51 moves toward the opposing surface 51, and as a result, the wiping portion 93 rotates with the side that first came into contact with the opposing surface 51 as a force point, and the inclination of the entire wiping portion 93 with respect to the opposing surface 51 is eliminated and the wiping portion 93 is positioned parallel to the opposing surface 51.

[0068] When a predetermined time has elapsed while the wiping unit 93 is repeatedly reciprocating (YES in step S09), the discharge of the cleaning liquid Lp from the supply port 92a is stopped, and the wiping unit 93 moves to a retracted position and stops there (step S10).

[0069] 4, the cleaning liquid supply unit 412 supplies the cleaning liquid Lw from the plate 50 in the cleaning position to the processing surface of the substrate W (step S11). When the cleaning liquid Lw is supplied to the processing surface of the rotating substrate W, the cleaning liquid Lw moves sequentially toward the outer periphery of the substrate W, thereby washing away the processing liquid Le from the processing surface of the substrate W. Then, when a predetermined cleaning time has elapsed (YES in step S12), the cleaning liquid supply unit 412 stops supplying the cleaning liquid Lw (step S13).

[0070] The substrate W stops rotating (step S14), and the plate 50 rises to the waiting position (step S15). Then, the hand of the transport robot is inserted under the substrate W, the substrate W is released from the holder 30, and the substrate W is removed by the hand of the transport robot (step S16).

[0071] The cleaning position and the standby position do not necessarily have to be different. The position of the plate 50 may be in the standby position when the cleaning liquid Lw is supplied to the substrate W, and the position of the plate 50 may be in the cleaning position when the substrate W is loaded or unloaded. In other words, the two positions do not have to be clearly distinguished, and the loading and unloading of the substrate W, the supply of the cleaning liquid Lw, and the wiping of the facing surface 51 may be performed in the same position.

[0072] [effect] (1) The substrate processing apparatus 1 of this embodiment as described above includes a rotating body 10 that rotates the substrate W held by the holding part 30, a processing liquid supply part 411 that supplies a processing liquid Le to the processing surface of the substrate W, a plate 50 provided at a position opposite the processing surface, a heating part 60 provided on the plate 50 that heats the processing liquid Le supplied to the processing surface of the substrate W, and a cleaning part 90 that cleans the opposing surface 51 of the plate 50 that faces the processing surface.

[0073] The cleaning unit 90 includes a liquid supply unit 92 that supplies cleaning liquid Lp to the opposing surface 51, a wiping unit 93 that contacts the opposing surface 51 and wipes off the cleaning liquid Lp supplied by the liquid supply unit 92, a support 96 that supports the wiping unit 93 rotatably around an axis extending in a direction parallel to the opposing surface 51, and a moving mechanism 95 that moves the wiping unit 93 along the opposing surface 51.

[0074] Therefore, after the substrate W is processed with the processing liquid Le supplied from the processing liquid supply unit 411, the moving mechanism 95 brings the wiping unit 93 into contact with the facing surface 51 and moves it along the facing surface 51 while the liquid supply unit 92 supplies the cleaning liquid Lp to the facing surface 51, thereby wiping off the cleaning liquid Lp together with the processing liquid Le. Thus, the processing liquid Le remaining on the facing surface 51 of the plate 50 is removed, and the cleanliness of the plate 50 can be maintained. In addition, a decrease in the temperature of the facing surface 51 due to the remaining processing liquid Le and cleaning liquid Lp is suppressed. This makes it possible to suppress a decrease in the processing rate in processing the next substrate W after cleaning the plate 50. In this way, a change in temperature of the plate 50 for each substrate W to be processed can be suppressed, and a fluctuation in the processing rate for each substrate W due to a change in temperature of the plate 50 can be suppressed.

[0075] In addition, the support 96 supports the wiping part 93 so that it can rotate about an axis that extends in a direction parallel to the facing surface 51. Therefore, compared to when the wiping part 93 is fixed, the wiping part 93 can be brought into uniform contact with the facing surface 51, making it easier to clean the facing surface 51 uniformly.

[0076] (2) The adjustment unit 97 adjusts the opposing surface 51 and the contact portion 93a of the wiping portion 93 to be in parallel contact with each other by rotating the wiping portion 93. This allows the wiping portion 93 to come into contact with the entire opposing surface 51 with a small load, thereby preventing damage to the cleaning portion 90. In addition, the adjustment unit 97 adjusts the opposing surface 51 and the contact portion 93a to be in parallel contact with each other according to the inclination of the opposing surface 51 or the wiping portion 93, so that the wiping portion 93 can be brought into more uniform contact with the opposing surface 51.

[0077] (3) The adjustment unit 97 is provided to the wiping unit 93 and has an elastic member that rotates the wiping unit 93 by elastic force. Therefore, the inclination of the wiping unit 93 can be adjusted by elastic force while wiping off droplets from the facing surface 51, improving the efficiency of the cleaning process of the facing surface 51 of the plate. In addition, the adjustment unit 97 rotates the wiping unit 93 by the elastic force of the elastic member so that the facing surface 51 and the contact portion 93a are in contact in parallel, thereby simplifying the process of detecting the inclination, etc.

[0078] (4) The support pillar 96 is provided at the center in the longitudinal direction of the wiping portion 93. Therefore, regardless of the inclination direction of the opposing surface 51 or the wiping portion 93, the inclination of the wiping portion 93 can be easily adjusted with a constant pressure.

[0079] (5) There are multiple wiping units 93. Therefore, the multiple wiping units 93 perform wiping multiple times in one wiping operation, so that the cleanliness of the plate 50 can be further improved.

[0080] (6) The moving mechanism 95 moves the liquid supply unit 92 along the facing surface 51, and the wiping unit 93 is provided behind the liquid supply unit 92 in the direction of movement by the moving mechanism 95. Therefore, the wiping unit 93 can wipe off and remove the cleaning liquid Lp together with the processing liquid Le immediately after the cleaning liquid Lp is supplied by the liquid supply unit 92 moving along the facing surface 51. Since the cleaning liquid Lp can be removed immediately after it is supplied, the time that the cleaning liquid Lp is in contact with the facing surface 51 can be shortened, and a drop in temperature of the heating unit 60 can be prevented. Furthermore, when the cleaning liquid Lp is evaporated and dried, a drop in temperature occurs due to the heat of evaporation, but the temperature drop can be suppressed by wiping off the adhering cleaning liquid Lp.

[0081] [Variations] (1) As shown in Fig. 11, the support pillar 96 may be provided toward the other end of the wiping portion 93 in the longitudinal direction of the wiping portion 93. In this case, the movement mechanism 95 supports one end of the wiping portion 93 and moves it along the opposing surface 51. In this way, when the wiping portion 93 is supported at one end, the inclination of the wiping portion 93 increases the farther the position is from the movement mechanism 95. Therefore, by providing the support pillar 96 toward the other end of the wiping portion 93 so that the distance between the position where the inclination is greatest (point of action) and the support pillar 96 (fulcrum) is reduced, the adjustment portion 97 can easily adjust the inclination with a minimum of elastic force.

[0082] (2) The member of the adjustment unit 97 is not limited to an elastic member. For example, as shown in Fig. 12, the inclination of the wiping unit 93 may be detected in advance by a sensor or the like, and only one end of a movable pin provided at the lower end of the wiping unit 93 is raised or lowered according to the detected inclination, thereby adjusting the inclination. Note that the movable pin can be raised and lowered by a linear actuator such as a ball screw. This allows the inclination of the wiping unit 93 to be adjusted more accurately.

[0083] (3) There is no limit to the installation position or number of the adjustment unit 97. For example, as shown in FIG. 13, when the moving mechanism 95 supports one end side of the wiping unit 93 and swings, a support 96 may be provided on one end side of the wiping unit 93, and the adjustment unit 97 may be provided on the other end side of the wiping unit 93. In this case, it is preferable that the wiping unit 93 is inclined in advance so that the height increases from one end side of the moving mechanism 95 to the other end side. Also, for example, as shown in FIG. 14, when the moving mechanism 95 supports one end side of the wiping unit 93 and swings, the adjustment unit 97 may be provided only on one end side of the wiping unit 93.

[0084] (4) The shape of the adjustment portion 97 is not limited to the above-mentioned examples, and may be, for example, a Z-shape or a spring shape (such as a compression coil spring or a leaf spring).

[0085] (5) There is no limitation on the location where liquid supply unit 92 is provided. For example, liquid supply unit 92 may be provided outside opposing surface 51 of plate 50 in a plan view and may be provided to discharge cleaning liquid Lp forward of wiping unit 93 with respect to the movement direction of wiping unit 93.

[0086] (6) A plurality of support posts 96 may be provided corresponding to a plurality of wiping units 93. The plurality of support posts 96 may also be provided at different positions in a direction perpendicular to the longitudinal direction of the wiping unit 93. This allows the plurality of wiping units 93 corresponding to the plurality of support posts 96 provided at different positions to easily wipe off the processing liquid Le and the cleaning liquid Lp in accordance with various inclinations of the opposing surface 51 or the wiping unit 93, thereby reducing wiping leakage.

[0087] (7) The wiping portion 93 does not have to have any of the contact portion 93a, the cover portion 93b, and the backup portion 93c. For example, the contact portion 93a may be directly attached to the backup portion 93c. This makes it possible to easily replace the contact portion 93a.

[0088] (8) The wiping unit 93 may be provided behind the liquid supply unit 92 in the direction of movement by the movement mechanism 95. For example, of the pair of wiping units 93 in the above embodiment, the wiping unit 93 in front of the liquid supply unit 92 in the direction of movement may be omitted. In this case, the wiping unit 93 can be moved from one outer circumferential end of the opposing surface 51 to the other outer circumferential end, and then temporarily removed from the opposing surface 51 and returned to one outer circumferential end, and then the wiping unit 93 can be brought into contact with the opposing surface 51 again and moved from one outer circumferential end to the other outer circumferential end, thereby repeatedly wiping.

[0089] In addition, the wiping by the wiping unit 93 in the above embodiment and modified examples may be performed by only one reciprocating motion (two wipings) for processing one substrate W, or by only one wiping in one direction without reciprocating motion. That is, for example, the Nth substrate may be swung clockwise for processing, and the N+1th substrate may be swung counterclockwise for processing, so that wiping is performed once for each substrate W. Also, wiping may not be completed in one reciprocating motion (= two times), but may be performed an odd number of times, such as three times.

[0090] Furthermore, even when the wiping parts 93 are provided on both the front and rear of the liquid supply part 92 as in the above embodiment, wiping may be performed in one direction rather than back and forth. In this way, the rear wiping part 93 always comes into contact with the facing surface 51 after receiving the supply of the cleaning liquid Lp. Since the cleaning operation can be completed by wiping with the rear wiping part 93 in this way, it is possible to prevent the processing liquid from being reattached to the facing surface 51 from the wiping part 93.

[0091] (9) The wiping action of wiping portion 93 does not have to be a swinging motion. For example, the liquid receiving portion 94 may be moved from one outer circumferential end to the other outer circumferential end of opposing surface 51 by a moving mechanism that supports both ends of the liquid receiving portion 94 and moves it linearly parallel to opposing surface 51.

[0092] (10) A plurality of cleaning units 90 may be provided. For example, the entire opposing surface 51 may be cleaned by a plurality of cleaning units 90 that oscillate around different axes. In this case, the wiping unit 93 does not need to be long enough to contact the entire length of the opposing surface 51 as long as the entire opposing surface 51 can be wiped by the plurality of wiping units 93.

[0093] (11) The heating section 60 may have a structure in which each heater 61 includes a heat equalizing plate. The heating section 60 may be one that heats the substrate W or the processing liquid Le with light from a halogen lamp, an LED, or the like. The number of heaters 61 and the number of detection sections 70 in the heating section 60 are not limited to the above embodiment, and may be one, two, or four or more. In the above embodiment, a detection section 70 is provided corresponding to each of the multiple heating sections 60, so that the area where the temperature is measured and the area to be heated are the same, but the number of heating sections 60 and the number of detection sections 70 do not necessarily have to correspond to each other.

[0094] (12) In the process of the substrate processing apparatus 1, the process contents and the process liquid Le are not limited to those exemplified above, so long as the temperatures of the process liquid Le and the substrate W affect the process rate. The substrate W and the film to be processed are also not limited to those exemplified above.

[0095] [Other embodiments] Although the embodiment of the present invention and the modified examples of each part have been described above, these embodiments and the modified examples of each part are presented as examples and are not intended to limit the scope of the invention. These novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, combinations, and modifications can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the invention described in the claims. [Explanation of symbols]

[0096] 1. Substrate Processing Equipment 10 Rotating Body 11 Tables 12 cups 12a Drainage port 20 Rotation mechanism 21 Power Source 30 Holding part 31 Retaining pin 40 Supply section 41a Liquid tank 41b Supply pipe 41c Valve 41d flow meter 41e Valve 50 Plates 50a outlet 50b flange 51 Opposite Surface 60 Heating section 61 Heater 70 Detection unit 80 Drive unit 81 Support part 82 Arm 83 Advancement / retraction mechanism 90 Cleaning section 91 Support 92 Liquid supply section 92a Supply port 92b Branch piping 92c Valve 93 Wiping section 93a Contact part 93b Cover part 93c Backup Division 93e bearing part 94 Liquid receiver 94a Discharge hole 94b Discharge pipe 95 Moving mechanism 95a Arm 95b Swinging part 96 Pillar 97 Adjustment section 97a Slope 97b Fixed part 100 Control section 110 Mechanical control unit 120 Heating control section 411 Processing liquid supply unit 412 Cleaning liquid supply unit

Claims

1. A rotating body that rotates the substrate held by the holding part, A processing liquid supply unit that supplies processing liquid to the surface of the substrate to be processed, A plate provided at a position opposite the surface to be processed, A heating unit is provided on the plate for heating the processing liquid supplied to the surface of the substrate to be processed, A cleaning unit for cleaning the opposing surface of the plate that faces the surface to be processed, It has, The aforementioned cleaning unit is A liquid supply unit that supplies cleaning liquid to the opposing surface, A wiping unit that contacts and wipes the cleaning liquid supplied by the liquid supply unit to the opposing surface, The wiping section is supported by a support column that allows it to rotate using an axis extending in a direction parallel to the opposing surface as the pivot axis, A moving mechanism for moving the wiping unit along the opposing surface, A substrate processing apparatus having

2. The substrate processing apparatus according to claim 1, further comprising an adjustment unit that brings the opposing surface and the contact portion of the wiping unit into parallel contact by the rotation of the wiping unit.

3. The adjustment unit is, An elastic member provided in the wiping section, which rotates the wiping section by elastic force, A substrate processing apparatus according to claim 2, having the following features.

4. The substrate processing apparatus according to any one of claims 1 to 3, wherein the support column is provided at the center in the longitudinal direction of the wiping section.

5. The moving mechanism supports one end of the wiping portion and moves it along the opposing surface. The substrate processing apparatus according to any one of claims 1 to 3, wherein the support column is provided in the longitudinal direction of the wiping portion, closer to the other end of the wiping portion.

6. The substrate processing apparatus according to any one of claims 1 to 3, wherein a plurality of wiping sections are provided.

7. The moving mechanism moves the liquid supply unit along the opposing surface, The substrate processing apparatus according to any one of claims 1 to 3, wherein the wiping section is provided behind the liquid supply section in the direction of movement by the moving mechanism.

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