Display device

Abstract

To increase the definition of a display device with a light detecting function.SOLUTION: A display device has a plurality of transistors and a light-receiving device in a subpixel. The light-receiving device has a function of emitting light with a first color and a function of receiving light with a second color. One of a source and a drain of a first transistor is electrically connected to a first wire and the other is electrically connected to a gate of a second transistor. One electrode of the light-receiving device is electrically connected to one of a source and a drain of the second transistor, one of a source and a drain of a third transistor, and one of a source and a drain of a fifth transistor. One of a source and a drain of the fourth transistor is electrically connected to a second wire, and the other is electrically connected to the other of the source and the drain of the third transistor.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to a display device, a display module, and an electronic device. One aspect of the present invention relates to a display device having a light-receiving and emitting device (also referred to as a light-receiving and emitting element) and a light-emitting device (also referred to as a light-emitting element).

[0002] Note that one aspect of the present invention is not limited to the above technical field. Examples of the technical field of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), their driving methods, or their manufacturing methods.

Background Art

[0003] In recent years, display devices are expected to be applied to various uses. For example, as uses of large display devices, home television sets (also referred to as TVs or television receivers), digital signage, PID (Public c Information Display), etc. can be mentioned. Also, as mobile information terminals, the development of smartphones and tablet terminals equipped with touch panels has been advanced.

[0004] As display devices, for example, light-emitting devices having light-emitting devices have been developed. Light-emitting devices (also referred to as EL devices or EL elements) that utilize the electroluminescence (hereinafter abbreviated as EL) phenomenon are easy to make thin and lightweight, can respond quickly to input signals, and can be driven using a DC low-voltage power supply, etc. characteristics ​​​​It has a tone and is applied to a display device. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL device (also referred to as an organic EL element) is applied. EL element) is applied.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] One aspect of the present invention is to provide a display device having a light detection function as one of the problems. One aspect of the present invention is to increase the fineness of a display device having a light detection function as one of the problems. One aspect of the present invention is to provide a highly convenient display device as one of the problems. One aspect of the present invention is to provide a multifunctional display device as one of the problems. One aspect of the present invention is to provide a display device with a high aperture ratio as one of the problems. One aspect of the present invention is to provide a novel display device as one of the problems. One aspect of the present invention is to improve the production yield of a display device having a light detection function as one of the problems. One aspect of the present invention is to reduce the number of steps of a display device having a light detection function as one of the problems. One aspect of the present invention is to reduce the production cost of a display device having a light detection function as one of the problems. One aspect of the present invention is to provide a highly convenient display device as one of the problems. One aspect of the present invention is to provide a multifunctional display device as one of the problems. One aspect of the present invention is to provide a display device with a high aperture ratio as one of the problems. One aspect of the present invention is to provide a novel display device as one of the problems. One aspect of the present invention is to provide a multifunctional display device as one of the problems. One aspect of the present invention is to provide a display device with a high aperture ratio as one of the problems. One aspect of the present invention is to provide a novel display device as one of the problems. One aspect of the present invention is to provide a display device having a high aperture ratio as one of the problems. One aspect of the present invention is to provide a novel display device as one of the problems. One aspect of the present invention is to provide a display device with a high aperture ratio as one of the problems. One aspect of the present invention is to provide a novel display device as one of the problems. One aspect of the present invention is to provide a novel display device as one of the problems.

[0007] One aspect of the present invention is to improve the production yield of a display device having a light detection function as one of the problems. One aspect of the present invention is to reduce the number of steps of a display device having a light detection function as one of the problems. One aspect of the present invention is to reduce the production cost of a display device having a light detection function as one of the problems. One aspect of the present invention is to reduce the production cost of a display device having a light detection function as one of the problems.

[0008] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily need to solve all of these problems. The specification, drawings, and claims One aspect of the present invention does not necessarily need to solve all of these problems. The specification, drawings, and claims It is possible to extract other issues from the description in the section. [Means for solving the problem]

[0009] One embodiment of the present invention is a display device having a pixel, a first wiring, a second wiring, and a third wiring. The pixel has a first subpixel. The first subpixel has first to eighth transistors. The first transistor has a source and a drain. One of the drains is electrically connected to the first wiring, and the other is connected to the gate of the second transistor. , and is electrically connected to one electrode of the first capacitor. , one of the source and drain of the second transistor, the source and drain of the third transistor and one of the source and drain of the fifth transistor. One of the source and the drain of the fourth transistor is electrically connected to the second wiring. The other of the source and drain of the third transistor and the first capacitance The other of the source and drain electrodes of the fifth transistor is electrically connected to One of the source and drain of the sixth transistor and the gate of the seventh transistor One of the source and drain of the seventh transistor is electrically connected to the eighth transistor. The source and drain of the eighth transistor are electrically connected to one of the source and drain of the eighth transistor. The other of the source and drain is electrically connected to a third wiring. The optical fiber has a function of emitting light of a first color and a function of receiving light of a second color.

[0010] It is preferable that the first wiring is supplied with a first data potential. Preferably, a second data potential is supplied during a period, and a reset potential is supplied during a second period. Preferably, a potential corresponding to charges generated in the light-emitting and light-receiving device is supplied to the third wiring.

[0011] The display device according to one embodiment of the present invention preferably further includes fourth to eighth wirings. The gate of the first transistor and the gate of the third transistor are preferably electrically connected to the fourth wiring. The gate of the fourth transistor is preferably electrically connected to the fifth wiring. The gate of the fifth transistor is preferably electrically connected to the sixth wiring. The gate of the sixth transistor is preferably electrically connected to the seventh wiring. The gate of the eighth transistor is preferably electrically connected to the eighth wiring.

[0012] The first sub-pixel preferably further includes a second capacitor. One electrode of the second capacitor is preferably electrically connected to the other of the source and drain of the first transistor, the gate of the second transistor, and one electrode of the first capacitor. The other electrode of the second capacitor is preferably electrically connected to one electrode of the light-emitting and light-receiving device, one of the source and drain of the second transistor, one of the source and drain of the third transistor, and one of the source and drain of the fifth transistor.

[0013] The display device according to one embodiment of the present invention preferably further includes a ninth wiring. The pixel preferably further includes a second sub-pixel. The second sub-pixel preferably includes ninth to eleventh transistors and a light-emitting device. The source and drain of the ninth transistor ​​​One side of the drain is electrically connected to the ninth wiring, and the other side is preferably electrically connected to the gate of the tenth transistor. One electrode of the light-emitting device is preferably electrically connected to one of the source and drain of the tenth transistor and one of the source and drain of the eleventh transistor. The light-emitting device preferably has a function of emitting light of a second color. The other sides of the source and drain of the eleventh transistor are preferably electrically connected to the second wiring. Or, the second sub-pixel preferably further has a twelfth transistor. One of the source and drain of the twelfth transistor is electrically connected to the second wiring, and the other side is preferably electrically connected to the other sides of the source and drain of the eleventh transistor. One of the source and drain of the tenth transistor, and one of the source and drain of the eleventh transistor. The light-emitting device preferably has a function of emitting light of a second color.

[0014] The other sides of the source and drain of the eleventh transistor are preferably electrically connected to the second wiring. Or, the second sub-pixel preferably further has a twelfth transistor. One of the source and drain of the twelfth transistor is electrically connected to the second wiring, and the other side is preferably electrically connected to the other sides of the source and drain of the eleventh transistor. Or, the second sub-pixel preferably further has a twelfth transistor. One of the source and drain of the twelfth transistor is electrically connected to the second wiring, and the other side is preferably electrically connected to the other sides of the source and drain of the eleventh transistor. The other sides of the source and drain of the eleventh transistor are preferably electrically connected to the second wiring.

[0015] The light-emitting device preferably has a hole injection layer, a light-emitting layer, and an electron transport layer. The hole injection layer preferably has a first compound and a second compound. The electron transport layer preferably has an electron transporting material. The first compound preferably has an electron accepting property with respect to the second compound. The HOMO level of the second compound is preferably -5.7 eV or more and -5.4 eV or less. The electron transporting material has a HOMO level of -6.0 eV or more, and the electron mobility at a square root of the electric field strength [V / cm] of 600 is preferably 1×10 The hole injection layer preferably has a first compound and a second compound. The electron transport layer preferably has an electron transporting material. The first compound preferably has an electron accepting property with respect to the second compound. The HOMO level of the second compound is preferably -5.7 eV or more and -5.4 eV or less. The electron transporting material has a HOMO level of -6.0 eV or more, and the electron mobility at a square root of the electric field strength [V / cm] of 600 is 1×10 -7 cm 2 / Vs or more and 5×10 -5 cm 2 / Vs or less.

[0016] Or, the light-emitting device preferably has a light-emitting layer and an electron transport layer. The electron transport layer​​ It preferably has an electron transporting material and a first substance. The first substance is preferably a metal, a metal salt, a metal oxide, or an organometallic complex. The electron transport layer preferably has a first region and a second region. The concentration of the first substance in the first region and the second region is preferably different from each other. It is preferable that the light-emitting device and the light-emitting device are provided on the same plane.

[0017]

[0018]

[0019] The display device according to one aspect of the present invention preferably has flexibility. For example, the first to eighth transistors are preferably located on a flexible substrate.

[0019] One aspect of the present invention has a display device having any of the above configurations, and is a module such as a flexible printed circuit board (hereinafter referred to as FPC) or a module to which a connector such as TCP (Tape Carrier Package) is attached, or a module in which an integrated circuit (IC) is mounted by a COG (Chip On Glass) method or a COF (Chip On Film) method.

[0020]

[0020] One aspect of the present invention is an electronic device having the above module and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.

[0021] According to one aspect of the present invention, a display device having a light detection function can be provided. According to one aspect of the present invention, the fineness of the display device having a light detection function can be improved. According to one aspect of the present invention, ​, a highly convenient display device can be provided. According to one aspect of the present invention, a multifunctional display device can be provided can be provided. According to one aspect of the present invention, a display device with a high aperture ratio can be provided. According to one aspect of the present invention a novel display device can be provided.

[0022] According to one aspect of the present invention, the production yield of a display device having a light detection function can be improved. According to the present invention, according to one aspect, the number of steps of a display device having a light detection function can be reduced. According to one aspect of the present invention the production cost of a display device having a light detection function can be reduced.

[0023] Note that the description of these effects does not prevent the existence of other effects. One aspect of the present invention does not necessarily have to have all of these effects. It is possible to extract other effects from the descriptions in the specification, drawings, and claims .

Brief Description of the Drawings

[0024]

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Embodiments for Carrying Out the Invention

[0025] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. without departing from the spirit and scope of the present invention, its form and details can be variously changed which can be easily understood by those skilled in the art. Therefore, the present invention is not construed as being limited to the description of the embodiments shown below

[0026] In the configuration of the invention described below, the same reference numerals are commonly used for the same parts or parts having the same function among different drawings, and the repeated description thereof is omitted. Further, when referring to the same function, the hatching pattern may be the same and may not be particularly labeled

[0027] In addition, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. for the sake of easy understanding. For this reason, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings

[0028] Note that the term "film" and the term "layer" can be interchanged with each other depending on the case or situation. For example, the term "conductive layer" can be changed to the term "conductive film". Or, for example, the term "insulating film" can be changed to the term "insulating layer"

[0029] (Embodiment 1) In this embodiment, a display device and a driving method thereof according to an aspect of the present invention will be described with reference to FIGS. 1 to 5

[0030] The display unit of the display device according to an aspect of the present invention has a function of displaying an image using a light-emitting device. Further, the display unit also has one or both of an imaging function and a sensing function

[0031] ​​​​​​​​​​In the display device according to one aspect of the present invention, a pixel has a plurality of sub-pixels that exhibit different colors from each other. Among them, a sub-pixel that exhibits any one of the colors has a light-emitting and receiving device instead of a light-emitting device, and the sub-pixels that exhibit the other colors have light-emitting devices. The light-emitting and receiving device has both a function of emitting light (light-emitting function) and a function of receiving light (light-receiving function). For example, when a pixel has three sub-pixels, a red sub-pixel, a green sub-pixel, and a blue sub-pixel, at least one of the sub-pixels has a light-emitting and receiving device, and the other sub-pixels have light-emitting devices. Therefore, the display unit of the display device according to one aspect of the present invention has a function of displaying an image using both the light-emitting and receiving device and the light-emitting device.

[0032] By the light-emitting and receiving device serving as both a light-emitting device and a light-receiving device, a light-receiving function can be imparted to the pixel without increasing the number of sub-pixels included in the pixel. As a result, while maintaining the aperture ratio of the pixel (the aperture ratio of each sub-pixel) and the definition of the display device, one or both of an imaging function and a sensing function can be added to the display unit of the display device. Therefore, compared with the case where a sub-pixel having a light-receiving device is provided separately from the sub-pixel having a light-emitting device, the aperture ratio of the pixel can be increased, and high definition can be easily achieved. In the display device according to one aspect of the present invention, two types of data potentials (for example, the potential of image data and the potential of correction data) are combined to generate a potential to be supplied to the gate of the driving transistor of the light-emitting and receiving device. By combining the two types of data potentials, for example, gradation correction can be performed. Also, the drive for supplying the first data potential and the second data potential

[0033] In the display device according to one aspect of the present invention, two types of data potentials (for example, the potential of image data and the potential of correction data) are combined to generate a potential to be supplied to the gate of the driving transistor of the light-emitting and receiving device. By combining the two types of data potentials, for example, gradation correction can be performed. Also, the drive for supplying the first data potential and the second data potential to the gate of the driving transistor of the light-emitting and receiving device can be generated. By combining the two types of data potentials, for example, gradation correction can be performed. A potential exceeding the maximum potential that a driving circuit (source driver circuit) can supply can be generated within a sub-pixel. Thereby, the power supply voltage of the driving circuit can be lowered, and the power consumption of the driving circuit can be reduced.

[0034] Note that the display device according to one aspect of the present invention can also be applied to a configuration in which two types of data potentials are combined to generate a potential supplied to the gate of the driving transistor of the light-emitting device even in a sub-pixel having the light-emitting device.

[0035] [Example configuration of a pixel] FIG. 1 shows a circuit diagram representing one pixel of the display device.

[0036] The pixel shown in FIG. 1 has a sub-pixel (R·PD) that exhibits red light and has a light-receiving function, a sub-pixel (G) that exhibits green light, and a sub-pixel (B) that exhibits blue light. The pixel shown in FIG. 1 is connected to wiring GL1, wiring GL2, wiring SE, wiring V0, wiring SLR, wiring SLG, wiring SLB, wiring WX, wiring RS, wiring TX, wiring VCP, wiring VRS, wiring VPI, wiring ANODE, and wiring CATHODE / VPD.

[0037] The sub-pixel (R·PD) that exhibits red light and has a light-receiving function has transistors M1R, M2R, M3R, M4R, M11, M12, M13, M14, capacitors C1r, C2r, Cf, and a light-emitting and light-receiving device 190R·PD. Transistors M1R, M3R, M4R, M11, M12, and M14 each function as a switch.

[0038] The light-emitting and light-receiving device 190R·PD has a function of emitting red light and a function of receiving one or both of green and blue light. In this embodiment, an example in which a sub-pixel exhibiting red light has a light-emitting and light-receiving device is shown, but a sub-pixel exhibiting green or blue light may have a light-emitting and light-receiving device. The transistor M1R has its gate electrically connected to the wiring GL1, one of its source and drain electrically connected to the wiring SLR, and the other electrically connected to the gate of the transistor M2R, one electrode of the capacitor C1r, and one electrode of the capacitor C2r. The transistor M2R has one of its source and drain electrically connected to one of the source and drain of the transistor M3R, one of the source and drain of the transistor M11, the other electrode of the capacitor C1r, and the anode of the light-emitting and light-receiving device 190R·PD, and the other electrically connected to the wiring ANODE. The transistor M3R has its gate electrically connected to the wiring GL1, and the other of its source and drain electrically connected to one of the source and drain of the transistor M4R and the other electrode of the capacitor C2r. The transistor M4R has its gate electrically connected to the wiring GL2, and the other of its source and drain electrically connected to the wiring V0. The transistor M11 has its gate electrically connected to the wiring TX, and the other of its source and drain electrically connected to one of the source and drain of the transistor M12, the gate of the transistor M13, and one electrode of the capacitor Cf. The transistor M12 has its gate electrically connected to the wiring RS, and the other of its source and drain electrically connected to the wiring VRS. The light-emitting and light-receiving device 190R·PD has a function of emitting red light and a function of receiving one or both of green and blue light. In this embodiment, an example in which a sub-pixel exhibiting red light has a light-emitting and light-receiving device is shown, but a sub-pixel exhibiting green or blue light may have a light-emitting and light-receiving device. The light-emitting and light-receiving device 190R·PD has a function of emitting red light and a function of receiving one or both of green and blue light. In this embodiment, an example in which a sub-pixel exhibiting red light has a light-emitting and light-receiving device is shown, but a sub-pixel exhibiting green or blue light may have a light-emitting and light-receiving device.

[0039] The transistor M1R has its gate electrically connected to the wiring GL1, one of its source and drain electrically connected to the wiring SLR, and the other electrically connected to the gate of the transistor M2R, one electrode of the capacitor C1r, and one electrode of the capacitor C2r. The transistor M1R has its gate electrically connected to the wiring GL1, one of its source and drain electrically connected to the wiring SLR, and the other electrically connected to the gate of the transistor M2R, one electrode of the capacitor C1r, and one electrode of the capacitor C2r. The transistor M2R has one of its source and drain electrically connected to one of the source and drain of the transistor M3R, one of the source and drain of the transistor M11, the other electrode of the capacitor C1r, and the anode of the light-emitting and light-receiving device 190R·PD, and the other electrically connected to the wiring ANODE. The transistor M3R has its gate electrically connected to the wiring GL1, and the other of its source and drain electrically connected to one of the source and drain of the transistor M4R and the other electrode of the capacitor C2r. The transistor M4R has its gate electrically connected to the wiring GL2, and the other of its source and drain electrically connected to the wiring V0. The transistor M11 has its gate electrically connected to the wiring TX, and the other of its source and drain electrically connected to one of the source and drain of the transistor M12, the gate of the transistor M13, and one electrode of the capacitor Cf. The transistor M12 has its gate electrically connected to the wiring RS, and the other of its source and drain electrically connected to the wiring VRS. The transistor M2R has one of its source and drain electrically connected to one of the source and drain of the transistor M3R, one of the source and drain of the transistor M11, the other electrode of the capacitor C1r, and the anode of the light-emitting and light-receiving device 190R·PD, and the other electrically connected to the wiring ANODE. The transistor M2R has one of its source and drain electrically connected to one of the source and drain of the transistor M3R, one of the source and drain of the transistor M11, the other electrode of the capacitor C1r, and the anode of the light-emitting and light-receiving device 190R·PD, and the other electrically connected to the wiring ANODE. The transistor M3R has its gate electrically connected to the wiring GL1, and the other of its source and drain electrically connected to one of the source and drain of the transistor M4R and the other electrode of the capacitor C2r. The transistor M4R has its gate electrically connected to the wiring GL2, and the other of its source and drain electrically connected to the wiring V0. The transistor M11 has its gate electrically connected to the wiring TX, and the other of its source and drain electrically connected to one of the source and drain of the transistor M12, the gate of the transistor M13, and one electrode of the capacitor Cf. The transistor M12 has its gate electrically connected to the wiring RS, and the other of its source and drain electrically connected to the wiring VRS. The transistor M2R has one of its source and drain electrically connected to one of the source and drain of the transistor M3R, one of the source and drain of the transistor M11, the other electrode of the capacitor C1r, and the anode of the light-emitting and light-receiving device 190R·PD, and the other electrically connected to the wiring ANODE. The transistor M3R has its gate electrically connected to the wiring GL1, and the other of its source and drain electrically connected to one of the source and drain of the transistor M4R and the other electrode of the capacitor C2r. The transistor M4R has its gate electrically connected to the wiring GL2, and the other of its source and drain electrically connected to the wiring V0. The transistor M11 has its gate electrically connected to the wiring TX, and the other of its source and drain electrically connected to one of the source and drain of the transistor M12, the gate of the transistor M13, and one electrode of the capacitor Cf. The transistor M12 has its gate electrically connected to the wiring RS, and the other of its source and drain electrically connected to the wiring VRS. The transistor M2R has one of its source and drain electrically connected to one of the source and drain of the transistor M3R, one of the source and drain of the transistor M11, the other electrode of the capacitor C1r, and the anode of the light-emitting and light-receiving device 190R·PD, and the other electrically connected to the wiring ANODE. The transistor M3R has its gate electrically connected to the wiring GL1, and the other of its source and drain electrically connected to one of the source and drain of the transistor M4R and the other electrode of the capacitor C2r. The transistor M4R has its gate electrically connected to the wiring GL2, and the other of its source and drain electrically connected to the wiring V0. The transistor M11 has its gate electrically connected to the wiring TX, and the other of its source and drain electrically connected to one of the source and drain of the transistor M12, the gate of the transistor M13, and one electrode of the capacitor Cf. The transistor M12 has its gate electrically connected to the wiring RS, and the other of its source and drain electrically connected to the wiring VRS. The transistor M3R has its gate electrically connected to the wiring GL1, and the other of its source and drain electrically connected to one of the source and drain of the transistor M4R and the other electrode of the capacitor C2r. The transistor M3R has its gate electrically connected to the wiring GL1, and the other of its source and drain electrically connected to one of the source and drain of the transistor M4R and the other electrode of the capacitor C2r. The transistor M4R has its gate electrically connected to the wiring GL2, and the other of its source and drain electrically connected to the wiring V0. The transistor M11 has its gate electrically connected to the wiring TX, and the other of its source and drain electrically connected to one of the source and drain of the transistor M12, the gate of the transistor M13, and one electrode of the capacitor Cf. The transistor M12 has its gate electrically connected to the wiring RS, and the other of its source and drain electrically connected to the wiring VRS. The transistor M4R has its gate electrically connected to the wiring GL2, and the other of its source and drain electrically connected to the wiring V0. The transistor M4R has its gate electrically connected to the wiring GL2, and the other of its source and drain electrically connected to the wiring V0. The transistor M11 has its gate electrically connected to the wiring TX, and the other of its source and drain electrically connected to one of the source and drain of the transistor M12, the gate of the transistor M13, and one electrode of the capacitor Cf. The transistor M12 has its gate electrically connected to the wiring RS, and the other of its source and drain electrically connected to the wiring VRS. The transistor M11 has its gate electrically connected to the wiring TX, and the other of its source and drain electrically connected to one of the source and drain of the transistor M12, the gate of the transistor M13, and one electrode of the capacitor Cf. The transistor M11 has its gate electrically connected to the wiring TX, and the other of its source and drain electrically connected to one of the source and drain of the transistor M12, the gate of the transistor M13, and one electrode of the capacitor Cf. The transistor M12 has its gate electrically connected to the wiring RS, and the other of its source and drain electrically connected to the wiring VRS. The transistor M12 has its gate electrically connected to the wiring RS, and the other of its source and drain electrically connected to the wiring VRS. The transistor M12 has its gate electrically connected to the wiring RS, and the other of its source and drain electrically connected to the wiring VRS. The transistor M11 has its gate electrically connected to the wiring TX, and the other of its source and drain electrically connected to one of the source and drain of the transistor M12, the gate of the transistor M13, and one electrode of the capacitor Cf. The transistor M12 has its gate electrically connected to the wiring RS, and the other of its source and drain electrically connected to the wiring VRS. One of the source and drain of the transistor M13 is electrically connected to one of the source and drain of the transistor M14, and the other is electrically connected to the wiring VPI. The transistor M1 4 has a gate electrically connected to the wiring SE, and the other of the source and drain is electrically connected to the wiring WX. The other electrode of the capacitor Cf is electrically connected to the wiring VCP. The cathode of the light-emitting and receiving device 190R·PD is electrically connected to the wiring CATHODE / VPD.

[0040] The sub-pixel (G) that exhibits green light includes the transistors M1G, M2G, M3G, the capacitor C1g, and the light-emitting device 190G. The transistors M1G and M3G each function as a switch.

[0041] For the transistor M1G, the gate is electrically connected to the wiring GL1, one of the source and drain is electrically connected to the wiring SLG, and the other is electrically connected to the gate of the transistor M2G and one electrode of the capacitor C1 g. For the transistor M2G, one of the source and drain is electrically connected to one of the source and drain of the transistor M3G, the other electrode of the capacitor C1g, and the anode of the light-emitting device 190G, and the other is electrically connected to the wiring ANODE. For the transistor M3G, the gate is electrically connected to the wiring GL1, and the other of the source and drain is electrically connected to the wiring V0. The cathode of the light-emitting device 190G is electrically connected to the wiring CATHODE / VPD.

[0042] The sub-pixel (B) that exhibits blue light includes the transistors M1B, M2B, M3B, It has transistor M3B, capacitor C1b, and light-emitting device 190B. Transistor M1B and transistor M3B each function as a switch.

[0043] For transistor M1B, its gate is electrically connected to wiring GL1, and one of its source and drain is electrically connected to wiring SLB, while the other is electrically connected to the gate of transistor M2B and one electrode of capacitor C1 b. For transistor M2B, one of its source and drain is electrically connected to one of the source and drain of transistor M3B, the other electrode of capacitor C1b, and the anode of light-emitting device 190B, and the other is electrically connected to wiring ANODE. For transistor M3B, its gate is electrically connected to wiring GL1, and the other of its source and drain is electrically connected to wiring V0. The cathode of light-emitting device 190B is electrically connected to wiring CATHODE / VPD.

[0044] Selection signals for controlling the operation of the transistors are respectively supplied to wiring GL1, wiring GL2, wiring SE, wiring TX, and wiring RS. Each of these selection signals includes a potential that turns the transistor on (also referred to as the on state) and a potential that turns the transistor off (also referred to as the off state).

[0045] Image signals are respectively supplied to wiring SLR, wiring SLG, and wiring SLB. For example, a first data potential D is supplied to wiring SLR (see FIG. 4A).

[0046] A second data potential D w and a reset potential V R are supplied to wiring V0 during different periods (see FIG. 4A).

[0047] Wiring VPI, Wiring VCP, Wiring VRS, Wiring ANODE, and Wiring CATHODE / VP Predetermined potentials are supplied to D respectively. A potential higher than the maximum value of the potential applied to the gate of transistor M13 is supplied to Wiring VPI. An arbitrary potential (for example, 0 V) can be supplied to Wiring VCP. A potential lower than that of Wiring CATHODE / VPD is supplied to Wiring VRS. A potential higher than that of Wiring CATHODE / VPD is supplied to Wiring ANODE.

[0048] Transistors M1R, M1G, M1B, M3R, M3G, and M3B are controlled by the signal supplied to Wiring GL1 and function as selection transistors for controlling the selection state of the pixel.

[0049] Transistor M2R functions as a drive transistor that controls the current flowing through light-emitting and receiving device 190R·PD according to the potential supplied to its gate. Similarly, transistors M2G and M2B function as drive transistors that control the current flowing through light-emitting devices 190G and 190B respectively according to the potential supplied to their gates.

[0050] Transistor M1R functions as a switch that controls the conduction and non-conduction between Wiring SLR and the gate of transistor M2R. When transistor M1R is in the conduction state, the first data potential D supplied to Wiring SLR is supplied to the gate of transistor M2R.

[0051] When transistor M1R is in the conduction state, simultaneously, transistor M3R also becomes in the conduction state. ​​​​​​​Transistor M3R functions as a switch for supplying a reset potential to the anode of the light-emitting and light-receiving device 190R·PD. When transistors M1R and M3R are turned on, transistor M4R is simultaneously turned on. At this time, the wiring V0 is supplied with a reset potential. As a result, a reset potential can be supplied to the anode of the light-emitting and light-receiving device 190R·PD.

[0052] By supplying the first data potential D and the reset potential during the same period, regardless of the electrical characteristics of the light-emitting and light-receiving device 190R·PD, the voltage between the gate and source of transistor M2R can be determined. As a result, the display quality of the display device can be improved.

[0053] One electrode of the capacitor C2r is electrically connected to the gate of transistor M2R. Transistor M4R functions as a switch for controlling the conduction and non-conduction between the other electrode of the capacitor C2r and the wiring V0. When a second data potential is supplied to the wiring V0, transistors M1R and M3R are turned off, and transistor M4R is turned on. By turning on transistor M4R, a second data potential can be supplied to the other electrode of the capacitor C2r via transistor M4R. After supplying the first data potential to the gate of transistor M2R,

[0054] transistor M1R is turned off to make the gate of transistor M2R in a floating state, and a second data potential is supplied to the other electrode of the capacitor C2r via transistor M4R. The potential of the gate of transistor M2R (the potential of node GR) is capacitively coupled via the capacitor C2r to the second ... ... ... Changes from the first data potential according to the data potential. The light-emitting and receiving device 190R·PD can emit light with a luminance corresponding to the potential of the node GR.

[0055] The wiring V0 can serve as both a wiring for supplying the second data potential and a wiring for supplying the reset potential. Therefore, even in a multifunctional display device, the number of wirings can be reduced, and high definition can be achieved.

[0056] Furthermore, the wiring V0 may also serve as a wiring for supplying the second data potential and the reset potential to two or more sub-pixels. This is preferable because it can further reduce the number of wirings of the display device.

[0057] When the transistor M1G is in the conductive state, simultaneously, the transistor M3G also becomes in the conductive state, the potential supplied to the wiring SLG is supplied to the gate of the transistor M2G, and the reset potential supplied to the wiring V0 is supplied to the source or drain of the transistor M3G. The light-emitting device 190G can emit light with a luminance corresponding to the gate potential of the transistor M2G. When the transistor M1B is in the conductive state, simultaneously, the transistor M3B also becomes in the conductive state, the potential supplied to the wiring SLB is supplied to the gate of the transistor M2B, and the reset potential supplied to the wiring V0 is supplied to the source or drain of the transistor M3B. The light-emitting device 190B can emit light with a luminance corresponding to the gate potential of the transistor M2B.

[0058] The transistor M11 is controlled by a signal supplied to the wiring TX, and controls the timing at which the potential of the node FD changes according to the current flowing through the light-emitting and receiving device 190R·PD. ​​​​​​ has. Transistor M12 is controlled by a signal supplied to wiring RS, and the potential of node FD connected to the gate of transistor M13 is set to the potential supplied to wiring VRS, thereby having a function of resetting the potential of node FD. Transistor M13 functions as an amplification transistor that outputs according to the potential of node FD. Transistor M 14 is controlled by a signal supplied to wiring SE and functions as a

[0059] selection transistor for reading out an output according to the potential of node FD to an external circuit connected to wiring WX. In the display device according to one aspect of the present invention, it is preferred to use a transistor having a metal oxide (also referred to as an oxide semiconductor) in a semiconductor layer in which a channel is formed for all the transistors included in the pixel shown in FIG. 1. The

[0060] OS transistor has an extremely small off-current and can hold the charge accumulated in a capacitor connected in series with the transistor for a long time. Further, by using the OS transistor, the power consumption of the display device can be reduced. Alternatively, in the display device according to one aspect of the present invention, it is preferable to use a transistor having silicon in The STA has a high field-effect mobility and can operate at high speed.

[0061] Furthermore, by using Si transistors such as LTPS transistors, it becomes easy to fabricate various circuits configured by CMOS circuits on the same substrate as the display unit. As a result, the external circuits mounted on the display device can be simplified, and the component cost and mounting cost can be reduced. Moreover, in the display device according to one aspect of the present invention, it is preferable to use two types of transistors for the sub-pixel (R·PD) having the light-emitting and receiving device. Specifically, it is preferable that the sub-pixel has an OS transistor and an LTPS transistor. By changing the material of the semiconductor layer according to the functions required for the transistors, the quality of the pixel circuit of the sub-pixel (R·PD) having the light-emitting and receiving device can be improved, and the accuracy of sensing and imaging can be enhanced. At this time, for the sub-pixels (G) and (B) having the light-emitting device, either one or both of the OS transistor and the LTPS transistor may be used. Furthermore, even when two types of transistors (for example, an OS transistor and an LTPS transistor) are used for the pixel, by using the LTPS transistor, it becomes easy to fabricate various circuits configured by CMOS circuits on the same substrate as the display unit. As a result, the external circuits mounted on the display device can be simplified, and the component cost and mounting cost can be reduced.

[0062]

[0063]

[0064] A transistor using a metal oxide having a wider bandgap and a lower carrier density than silicon is used. The transistor can achieve an extremely small off-current. Therefore, due to its small off-current, it is possible to maintain the charge stored in the capacitor connected in series with the transistor over a long period of time. Therefore, it is particularly preferable to use an OS transistor for the transistors M1R, M1G, M1B, M3R, M3G, M3B, M4R, M11, and M12 connected in series to the capacitors C1r, C1g, C1b, C2r, or Cf. Moreover, it is preferable to use an Si transistor for the transistor M13. Thereby, the readout operation of the imaging data can be performed at high speed. In addition, in FIG. 1, although the transistors are shown as n-channel type transistors, p-channel type transistors can also be used. In addition, in FIG. 1, an example in which each transistor has one gate is shown, but at least one of the plurality of transistors included in the sub-pixel may have a back gate. A pair of gates of the transistor may be electrically connected. Thereby, the on-current of the transistor can be increased and the saturation characteristics can be improved, so that a more reliable display device can be realized. Or, the back gate may be electrically connected to a wiring to which a fixed potential is applied. Thereby, the electrical characteristics of the transistor can be stabilized. Or, the back gate may be electrically connected to a wiring to which a potential for controlling the threshold voltage of the transistor is applied.

[0065]

[0066]

[0067] ​​​​​​​​​​​​​​​

[0068] One or more layers having one or both of a transistor and a capacitor are provided at a position overlapping with the light-emitting device 190R·PD, the light-emitting device 190G, or the light-emitting device 190B. This is preferable. Thereby, the effective occupation area of each pixel circuit can be reduced, and a high-definition display unit can be realized.

[0069] [Example configuration of pixel 2] FIG. 2 shows a circuit diagram representing one pixel of the display device.

[0070] The sub-pixel (G) that exhibits green light shown in FIG. 2 is different from the sub-pixel (G) shown in FIG. 1 in that it has the transistor M4G and the capacitor C2g. Similarly, the sub-pixel (B) that exhibits blue light shown in FIG. 2 is different from the sub-pixel (B) shown in FIG. 1 in that it has the transistor M4B and the capacitor C2b. Note that the sub-pixel (R·PD) that exhibits red light and has a light-receiving function shown in FIG. 2 is the same as the sub-pixel (R·PD) shown in FIG. 1.

[0071] In FIG. 2, the other of the source and drain of the transistor M3G is not the wiring V0, but is electrically connected to one of the source and drain of the transistor M4G and the other electrode of the capacitor C2g. The gate of the transistor M4G is electrically connected to the wiring GL2, and the other of the source and drain is electrically connected to the wiring V0. One electrode of the capacitor C2g is electrically connected to the other of the source and drain of the transistor M1G, the gate of the transistor M2G, and one electrode of the capacitor C1g.

[0072] Similarly, in FIG. 2, the other of the source and drain of the transistor M3B is not the wiring V0, Instead, one of the source and drain of the transistor M4B and the other electrode of the capacitor C2b are electrically connected. The gate of the transistor M4B is electrically connected to the wiring GL2, and the other of the source and drain is electrically connected to the wiring V0. One electrode of the capacitor C2b is electrically connected to the other of the source and drain of the transistor M1B, the gate of the transistor M2B, and one electrode of the capacitor C1b.

[0073] With such a configuration, also in the sub-pixel (G) and the sub-pixel (B), the data potential supplied from the wiring SLG or the wiring SLB and the data potential supplied from the wiring V0 are combined to generate the potential to be supplied to the gate of the driving transistor (transistors M2G, M2B) of the light-emitting device. Therefore, it is possible to perform gradation correction and to apply a voltage equal to or higher than the output voltage of the source driver as the gate voltage of the driving transistor.

[0074] [Driving Method of Display Device] An example of the driving method of the display device is shown in FIGS. 3A and 3B. Also, the timing charts of each operation are shown in FIGS. 4A, 4B, 5A to 5D.

[0075] As shown in FIG. 3A, when performing image display, the writing operation of the image signal is performed for each row. As shown in FIG. 3A, the writing is performed in order for the first row, the second row, and so on. The timing chart of the writing operation P1 of the image signal in the pixel of the nth row shown in FIG. 3A is shown in FIG. 4A.

[0076] Hereinafter, the sub-pixel (R· PD) that exhibits red light and has a light-receiving function shown in FIGS. 1 and 2 will be described as an example. In FIG. 4A, the wiring GL1 of the nth row <n>, wiring G on the n-th line L2 <n>, the signals input to the wiring SLR and the wiring V0, and the transition of the potential of the node GR are shown together with an example.

[0077] Note that, in the sub-pixels (G) that exhibit green light and the sub-pixels (B) that exhibit blue light shown in FIG. 2 , the image signal can be written in the same manner.

[0078] Note that, hereinafter, for the sake of simplicity of explanation, the effects of the threshold voltage of the transistor, the resistance in the on-state of the transistor, the gate capacitance of the transistor, the wiring resistance, the parasitic capacitance, etc. are not considered.

[0079] Before time T0, the wiring GL1 <n>, wiring GL2 <n>is provided with a potential (here, a low-level potential) that turns the transistor off. The wiring SLR and the wiring V0 are each given data for writing to the pixels in the previous row. Also, the node GR is in a state where the potential V was given in the previous frame. X

[0080] At time T0, the wiring GL1 <n>and wiring GL2 <n>A transistor is turned on and a potential (here, a high-level potential) is applied, a data potential D is applied to the wiring SLR, and a reset potential V is applied to the wiring V0. R

[0081] During the period T0 - T1, the transistors M1R, M3R, and M4R are turned on respectively. To the other electrode of the capacitor C2r, the reset potential V is supplied through the transistor M4R. R Furthermore, to the anode of the light-emitting and receiving device 190R·PD, and to the other electrode of the capacitor C1r, the reset potential V is supplied through the transistors M4R and M3R. R To the node GR, the data potential D is supplied through the transistor M1R.

[0082] Thus, when writing the data potential D to the node GR, by writing the reset potential V to the node SA to which the anode of the light-emitting and receiving device 190R·PD is connected, regardless of the electrical state of the light-emitting and receiving device 190R·PD, the potential difference between the node SA and the node GR, that is, the voltage between the gate and the source of the transistor M2R can be determined. Specifically, R the voltage between the gate and the source of the transistor M2R is D - V with respect to the reset potential V. R V R

[0083] Also, the capacitor C2r is charged according to the potential difference between the data potential D and the reset potential V. R

[0084] At this time, the reset potential V is applied to the anode of the light-emitting and receiving device 190R·PD. R is applied.​​​​​​​​​​​ It will be in the obtained state. The voltage between the pair of electrodes of the light-emitting and receiving device 190R·PD is such that the reset potential V is set so as not to exceed the threshold voltage of the light-emitting and receiving device 190R·PD. R By doing so emission of the light-emitting and receiving device 190R·PD does not occur.

[0085] Subsequently, at time T1, the wiring GL1 <n>is given a low-level potential, and wiring GL2 <n>A high-level potential is applied to it, and the data potential D is applied to the wiring V0. W is applied.

[0086] When the wiring GL1 becomes a low-level potential, the transistors M1R and M3R become non-conductive states. As a result, the node GR becomes a floating state.

[0087] To the other electrode of the capacitor C2r, the data potential D is applied via the transistor M4R. W is applied. Since the capacitor C2r is in a state where the voltage D - V R is charged, as the potential of the other electrode changes from the reset potential V to the data potential D R , due to capacitive coupling, the potential of the node GR W changes from the potential D to the potential V . Here, the change in the potential of the node GR (that is, the difference between the potential V D+W and the potential D) is generally determined by the capacitance value of the capacitor C2r and the capacitance value of the capacitor C1r. When the capacitance value of the capacitor C2r is sufficiently larger than the capacitance value of the capacitor C1r , the change in the potential of the node GR becomes a value close to the difference between the data potential D D+W and the reset potential V . As a result, the potential V W is applied to the gate of the transistor M2R. R According to this potential, a current flows through the transistor M2R to the light-emitting and receiving device 190R·PD, and the light-emitting and receiving device 190R·PD can be made to emit light. .

[0088] For example, by supplying a high-level potential as the data potential D D+W , the emission luminance of the light-emitting and receiving device 19 0R·PD can be increased. On the other hand, as the data potential D ...

[0089] For example, by supplying a high-level potential as the data potential D W , the emission luminance of the light-emitting and receiving device 19 0R·PD can be increased. On the other hand, as the data potential D W at a low level By supplying a potential, the emission luminance of the light-emitting and light-receiving device 190R·PD can be lowered .

[0090] With such a driving method, the emission luminance can be adjusted for each sub-pixel, so-called pixel dimming can be realized. By correcting to an optimal luminance according to the image to be displayed, a display with high display quality can be realized. Also, since the data for display and the data for correction can be supplied to the pixels individually, it is not necessary to generate video data obtained by adding the data for display and the data for correction. Therefore, the configuration of the driving circuit and the like can be simplified. At time T2, the wiring GL2

[0091] <n>A low-level potential is applied thereto. As a result, n The writing operation of data to the sub-pixel (R·PD) that exhibits red light and has a light-receiving function, which is possessed by the pixel in the n th row, is completed. After time T2, the writing operation for the next row is performed.

[0092] Fig. 3B shows the sequence when imaging is performed using the light-emitting and light-receiving device 190R·PD in the global shutter method. As shown in Fig. 3B, when imaging is performed using the light-emitting and light-receiving device 190R·PD, first, the writing operation of the imaging image signal is performed for each row, and then, while keeping the written data, in the sub-pixel having a light-receiving function, the initialization (reset ) operation, exposure (accumulation) operation, and transfer operation are performed in order, and then, the imaging data is read out for each row to perform detection. ) operation, exposure (accumulation) operation, and transfer operation are performed in order, and then, the imaging data is read out for each row to perform detection.

[0093] Fig. 4B shows the timing chart of the writing operation P2 of the imaging image signal in the pixel of the nth row. Here, an example is shown in which the light-emitting device 190G is used as a light source in the pixel circuit shown in Fig. 1 and imaging is performed with the light-emitting and light-receiving device 190R·PD. Here, an example is shown in which the light-emitting device 190G is used as a light source in the pixel circuit shown in Fig. 1 and imaging is performed with the light-emitting and light-receiving device 190R·PD. to perform detection.

[0094] First, before time T3, the wiring GL1 <n>Potential and wiring GL2 <n>The potential is set to high as the bell potential, and the wiring TX and the wiring RS <n>, and wiring SE <n>Set the potentials to low level potentials. As a result, transistor M1R, transistor M3R, and tran sistor M4R conduct, and a charge corresponding to the potential difference between the potential Vb of wiring SLR and the reset potential V of wiring V0 R ( voltage Vb - V R ) is accumulated in capacitors C1r and C2r. Also, transistor M1G and transistor M3G conduct, and a charge corresponding to the potential difference between the potential Vem of wiring SLG and the reset potential V of wiring V0 R (voltage Vem - V R ) is accumulated in capacitor C1g. Further , transistor M1B and transistor M3B conduct, and a charge corresponding to the potential difference between the potential Vb of wiring SLB and the reset potential V of wiring V0 R (voltage Vb - V R ) is accumulated in capacitor C1g . At this time, wiring WX <m>The potential is a low-level potential.

[0095] Here, the potential Vb of the wiring SLR is the gate-source voltage ( Vgs) and the threshold voltage (Vth) in the transistor M2R, where Vgs = Vb - V R < is set to a potential that satisfies Vth. Thereby, the transistor M2R can be completely turned off.

[0096] The potential Vem of the wiring SLG is set to a potential for causing the light-emitting device 190G to emit light. As the potential Vem, it is preferable to supply a potential at which the light emission of the light-emitting device 190G has sufficient luminance for imaging. This is preferable.

[0097] To the wiring SLB, a potential is supplied at which the light-emitting device 190B does not emit light. In FIG. 4B, an example in which the potential Vb is supplied to the wiring SLB is shown, but it is not limited thereto. The potential supplied to the wiring SLB may be the same as or different from the potential supplied to the wiring SLR. Note that when the light-emitting device 190B is also used as a light source during imaging, a potential for causing the light-emitting device 190B to emit light is supplied to the wiring SLB.

[0098]

[0098] Next, between time T3 and time T4, the wiring GL1 <n>The potential and wiring GL2 <n>potential By setting the potential of to a low-level potential, transistors M1R, M1G, M1B, M3R, M3G , M3B, and M4R become non-conductive, and the charges stored in capacitors C1r, C1g, C1b, and C2r are retained, ending the writing operation of the image signal for imaging. Based on the gate potential of transistor M2G, light-emitting device 190G emits light.

[0099] Fig. 5A shows the timing chart of the initialization (reset) operation P3.

[0100] At time T5, wiring TX and wiring RS <n>By setting the potential to the high-level potential, the transistors M11 and M12 are turned on. As a result, the potential of the anode of the light-emitting and receiving device 190 R·PD and the potential of the node FD are made the same as the potential supplied to the wiring VRS, and the potential of the node FD can be reset. Since the node GR is in a floating state, Vgs is stored and the transistor M2R remains off regardless of the potential of the node SA. By supplying a potential lower than that of the wiring CATHODE / VPD to the wiring VRS, a reverse bias can be applied to the light-emitting and receiving device 190R·PD. At time T6, the wiring TX and the wiring RS

[0101] <n>By setting the potential to a low-level potential, the transistors M11 and M12 become non-conductive, and the initialization operation ends. The transistors M11 and M12 become non-conductive, and the initialization operation ends.

[0102] Fig. 5B shows the timing chart of the exposure (accumulation) operation P4.

[0103] From time T7 to time T8, the light-receiving and emitting device 190R·PD generates charges by receiving the light emitted by the light-emitting device 190G. As a result, charges are accumulated in the capacitance of the light-receiving and emitting device 190R·PD, and the potential of the node SA becomes a potential corresponding to the charges generated by the light-receiving and emitting device 190R·PD. From time T7 to time T8, the light-receiving and emitting device 190R·PD generates charges by receiving the light emitted by the light-emitting device 190G. As a result, charges are accumulated in the capacitance of the light-receiving and emitting device 190R·PD, and the potential of the node SA becomes a potential corresponding to the charges generated by the light-receiving and emitting device 190R·PD. From time T7 to time T8, the light-receiving and emitting device 190R·PD generates charges by receiving the light emitted by the light-emitting device 190G. As a result, charges are accumulated in the capacitance of the light-receiving and emitting device 190R·PD, and the potential of the node SA becomes a potential corresponding to the charges generated by the light-receiving and emitting device 190R·PD. From time T7 to time T8, the light-receiving and emitting device 190R·PD generates charges by receiving the light emitted by the light-emitting device 190G. As a result, charges are accumulated in the capacitance of the light-receiving and emitting device 190R·PD, and the potential of the node SA becomes a potential corresponding to the charges generated by the light-receiving and emitting device 190R·PD.

[0104] During the period from time T7 to time T8, the wirings SLR, SLG, SLB, and GL1 1 <n>, wiring GL2 <n>, wiring TX, wiring RS <n>, wiring SE <n>, and wiring W X <m>can be set as a low-level potential.

[0105] Fig. 5C shows the timing chart of the transfer operation P5.

[0106] At time T9, by setting the potential of the wiring TX to a high-level potential, the transistor M11 becomes conductive and thus. As a result, charge is transferred from node SA to node FD. That is, the potential of node F D becomes the potential corresponding to the charge generated by the light-emitting and receiving device 190R·PD.

[0107] At time T10, by setting the potential of the wiring TX to a low-level potential, the transistor M11 becomes non- conductive and the transfer operation ends.

[0108] Fig. 5D shows the timing chart of the detection operation P6.

[0109] At time T11, the wiring SE <n>By setting the potential of to the high-level potential, transistor M1 4 conducts, and wiring WX <m>The potential can be made to be the potential corresponding to the charges generated by the light emitting and receiving device 190R·PD. Accordingly, an output sig corresponding to the charges generated by the light emitting and receiving device 190R·PD is outputted to the wiring WX. <m>It can be read by an external circuit connected thereto. Note that the transistor M13 can also be said to be a transistor included in the source follower circuit. Yes.

[0110] At time T12, the wiring SE <n>The potential of remains at the high-level potential, and the wiring RS <n>the potential of By setting the potential to a high level, the transistor M12 conducts, and the wiring WX <m>Reset the potential to a potential corresponding to the potential of the wiring VRS. As a result, the background potential can be read. Therefore, in the external circuit, the fixed pattern noise caused by the transistor M13 can be removed from the output signal read at time T11. This makes it possible to reduce the influence of variations in the characteristics of the transistor M13 between pixels.

[0111] At time T13, the wiring RS <n>By setting the potential to a low-level potential, transistor M1 2 becomes non-conductive.

[0112] At time T14, wiring SE <n>By setting the potential of the transistor M1 to a low level potential, 4 becomes non-conductive and the detection operation ends.

[0113] By repeating the operation from time T3 to time T14, imaging can be performed repeatedly. In addition, the OS transistors M1R, M2R, M1G, M2G, M1B, and M2B are When a transistor is used, it is possible to hold the image signal for imaging for a long period of time. Therefore, the frequency of the write operation P2 of the image signal for use can be reduced. After performing the operation from time T3 to time T14, the operation from time T5 to time T14 is performed as specified. The number of times may be repeated, and then the operation may return to the operation at time T3.

[0114] The display device of the present embodiment has an image display mode, an image capture mode, and an image display mode. The image display mode can be used in either the image display mode or the image capture mode. In the mode for taking pictures, for example, a full-color image can be displayed. For example, an image for imaging (e.g., a single color of green, a single color of blue, etc.) is displayed, and a light receiving / emitting device is used. In the imaging mode, for example, fingerprint authentication can be performed. In addition, in a mode in which image display and image capture are performed simultaneously, for example, some pixels may emit An image to be captured is captured using an optical device (light emitting device 190G or light emitting device 190B). The remaining pixels have Using light emitting and receiving devices, full color images can be displayed.

[0115] As described above, the display device of the present embodiment has a sub-division that emits red light and has a light receiving function. The pixel (R·PD) can be used for both image display and light detection. Also, among a plurality of sub pixels (R·PD), a part can be used for image display and the rest can be used for light detection. As a result, the display device of the present embodiment can be driven in any of a mode for performing image display, a mode for performing imaging, and a mode for simultaneously performing image display and imaging.

[0116] In addition, in the display device of the present embodiment, two types of data potentials (for example, the potential of image data and , the potential of correction data) can be combined to generate a potential to be supplied to the gate of the driving transistor of the light emitting and receiving device. Therefore, gradation correction can be performed when the light emitting and receiving device emits light. Also, since a voltage equal to or higher than the output voltage of the source driver can be applied as the gate voltage of the transistor, the power consumption of the source driver can be reduced.

[0117] The present embodiment can be appropriately combined with other embodiments. Also, in this specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined.

[0118] (Embodiment 2) In the present embodiment, a display device according to an aspect of the present invention will be described with reference to FIGS. 6 to 17.

[0119] A display device according to an aspect of the present invention includes a light emitting device and a light emitting and receiving device.

[0120] The light emitting and receiving device can be manufactured by combining an organic EL device, which is a light emitting device, and an organic photo diode, which is a light receiving device. For example, the organic EL device ​​​​​By adding an active layer of an organic photodiode to the stacked structure, a light-emitting device is created. Furthermore, it is possible to combine an organic EL device with an organic photodiode to create a The light-receiving and light-emitting devices can be fabricated in a single process, with layers that can be made to have a common structure with organic EL devices. Therefore, an increase in the number of film formation steps can be suppressed.

[0121] For example, one of the pair of electrodes (a common electrode) is shared by the light receiving and emitting device. For example, a hole injection layer, a hole transport layer, an electron transport layer, and an electrode layer may be used. At least one of the child injection layers may be a layer common to the light receiving and emitting device. In addition, for example, the light receiving and emitting devices are different from each other except for the presence or absence of an active layer of the light receiving device. In other words, the light-emitting device can be made to have the same structure as the light-receiving device. By simply adding a conductive layer, a light-emitting device can be fabricated. The number of film depositions and masks can be reduced by having common layers for the seat and the light-emitting device. This makes it possible to reduce the manufacturing process and manufacturing costs of the display device. To manufacture a display device having a light receiving and emitting device using existing manufacturing equipment and manufacturing methods. can be done.

[0122] In addition, the layers of the light receiving and emitting device are formed in the following manner when the light receiving and emitting device functions as a light receiving device. The function of the device may be different when it functions as a light-emitting device and when it functions as a light-emitting device. The components are based on the function when the light receiving and emitting device functions as a light emitting device. For example, the hole injection layer is used to prevent the light emitting device from functioning as a light emitting device. functions as a hole injection layer, and when the light emitting / receiving device functions as a light receiving device, It functions as a hole transport layer. Similarly, when the light-emitting and light-receiving device functions as a light-emitting device, the electron injection layer functions as an electron injection layer, and when the light-emitting and light-receiving device functions as a light-receiving device, it functions as an electron transport layer. When functioning, it functions as an electron injection layer, and when the light-emitting and light-receiving device functions as a light-receiving device, it functions as an electron transport layer. When functioning, it functions as an electron transport layer.

[0123] Thus, the display device of this embodiment has a light-emitting and light-receiving device and a light-emitting device in the display unit. Specifically, in the display unit, the light-emitting and light-receiving device and the light-emitting device are each arranged in a matrix. Therefore, in addition to the function of displaying an image, the display unit also has one or both of an imaging function and a sensing function. The display unit can be used for an image sensor or a touch sensor. That is, by detecting light with the display unit, an image can be captured, and the proximity or contact of an object (such as a finger or a pen) can be detected. Furthermore, the display device of this embodiment can use the light-emitting device as the light source of the sensor. Therefore, it is not necessary to provide a light-receiving unit and a light source separately from the display device, and the number of components of the electronic device can be reduced. In the display device of this embodiment, when the light emitted by the light-emitting device of the display unit is reflected by an object, the light-emitting and light-receiving device can detect the reflected light. Therefore, imaging and touch (contact or proximity) detection are possible even in a dark place. The display device of this embodiment has a function of displaying an image by using the light-emitting device and the light-emitting and light-receiving device. That is, the light-emitting device and the light-emitting and light-receiving device function as a display device (also referred to as a display element).

[0124] The display unit can be used for an image sensor or a touch sensor. That is, by detecting light with the display unit, an image can be captured, and the proximity or contact of an object (such as a finger or a pen) can be detected. Furthermore, the display device of this embodiment can use the light-emitting device as the light source of the sensor. Therefore, it is not necessary to provide a light-receiving unit and a light source separately from the display device, and the number of components of the electronic device can be reduced. In the display device of this embodiment, when the light emitted by the light-emitting device of the display unit is reflected by an object, the light-emitting and light-receiving device can detect the reflected light. Therefore, imaging and touch (contact or proximity) detection are possible even in a dark place. The display device of this embodiment has a function of displaying an image by using the light-emitting device and the light-emitting and light-receiving device. That is, the light-emitting device and the light-emitting and light-receiving device function as a display device (also referred to as a display element). In the display device of this embodiment, when the light emitted by the light-emitting device of the display unit is reflected by an object, the light-emitting and light-receiving device can detect the reflected light. Therefore, imaging and touch (contact or proximity) detection are possible even in a dark place.

[0125] When the light emitted by the light-emitting device of the display unit is reflected by an object, the light-emitting and light-receiving device can detect the reflected light. Therefore, imaging and touch (contact or proximity) detection are possible even in a dark place. In the display device of this embodiment, when the light emitted by the light-emitting device of the display unit is reflected by an object, the light-emitting and light-receiving device can detect the reflected light. Therefore, imaging and touch (contact or proximity) detection are possible even in a dark place. In the display device of this embodiment, when the light emitted by the light-emitting device of the display unit is reflected by an object, the light-emitting and light-receiving device can detect the reflected light. Therefore, imaging and touch (contact or proximity) detection are possible even in a dark place.

[0126] The display device of this embodiment has a function of displaying an image by using the light-emitting device and the light-emitting and light-receiving device. That is, the light-emitting device and the light-emitting and light-receiving device function as a display device (also referred to as a display element). That is, the light-emitting device and the light-emitting and light-receiving device function as a display device (also referred to as a display element). That is, the light-emitting device and the light-emitting and light-receiving device function as a display device (also referred to as a display element).

[0127] As the light-emitting device, it is preferable to use an EL device such as an OLED (Organic Light Emitting Di ode) or a QLED (Quantum-dot Light Emitting Di ode). Examples of the light-emitting substance included in the EL device include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), an inorganic compound ( quantum dot material, etc.), a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence (Therma lly Activated Delayed Fluorescence: TADF) material), etc. Further, as the light-emitting device, an LED such as a micro LED (Light E mitting Diode) can also be used. The display device of the present embodiment has a function of detecting light by using a light-emitting and receiving device. The light-emitting and receiving

[0128] device can detect light having a shorter wavelength than the light emitted by the light-emitting and receiving device itself. When the light-emitting and receiving device is used as an image sensor, the display device of the present embodiment can capture an image by using the light-emitting and receiving device. For example, the display device of the present embodiment can be used as a ski

[0129] nner. For example, data such as fingerprints and palm prints can be acquired by using an image sensor. Thus, a biometric authentication sensor can be incorporated into the display device of the present embodiment. By incorporating the biometric authentication sensor into the display device, the number of components of the electronic device can be reduced compared to the case where a biometric authentication sensor is provided separately from the display device, and the electronic device can be miniaturized and lightened. The display device can be used as a scanner.

[0130] For example, data such as fingerprints and palm prints can be acquired by using an image sensor. Thus, a biometric authentication sensor can be incorporated into the display device of the present embodiment. By incorporating the biometric authentication sensor into the display device, the number of components of the electronic device can be reduced compared to the case where a biometric authentication sensor is provided separately from the display device, and the electronic device can be miniaturized and lightened. That is, a biometric authentication sensor can be incorporated into the display device of the present embodiment. By incorporating the biometric authentication sensor into the display device, the number of components of the electronic device can be reduced compared to the case where a biometric authentication sensor is provided separately from the display device, and the electronic device can be miniaturized and lightened. By incorporating the biometric authentication sensor into the display device, the number of components of the electronic device can be reduced compared to the case where a biometric authentication sensor is provided separately from the display device, and the electronic device can be miniaturized and lightened. able. The display device can be used as a scanner.

[0131] In addition, by using an image sensor, data such as changes in the user's facial expression, eye movement, or pupil diameter can be obtained. By analyzing the data, information about the user's physical and mental state can be obtained. Based on the information, by changing the output content of one or both of the display and sound, for example, in a device for VR (Virtual Reality), AR (Augmented Reality), or MR (Mixed Reality), it is possible to ensure that the user can use the device safely. In addition, when the light-emitting and light-receiving device is used as a touch sensor, the display device according to the present embodiment can detect the proximity or contact of an object by using the light-emitting and light-receiving device. The light-emitting and light-receiving device functions as a photoelectric conversion device that detects light incident on the light-emitting and light-receiving device and generates charges. The amount of generated charges is determined based on the amount of incident light. The light-emitting and light-receiving device can be manufactured by adding an active layer of a light-receiving device to the configuration of the above-described light-emitting device. For the light-emitting and light-receiving device, for example, an active layer of a pn-type or pin-type photodiode can be used. In particular, it is preferable to use an active layer of an organic photodiode having a layer containing an organic compound for the light-emitting and light-receiving device. The organic photodiode is easy to thin, lighten, and increase in area, and has a high degree of freedom in shape and design, so it can be applied to various display devices.

[0132] In addition, by using an image sensor, data such as changes in the user's facial expression, eye movement, or pupil diameter can be obtained. By analyzing the data, information about the user's physical and mental state can be obtained. Based on the information, by changing the output content of one or both of the display and sound, for example, in a device for VR (Virtual Reality), AR (Augmented Reality), or MR (Mixed Reality), it is possible to ensure that the user can use the device safely. In addition, when the light-emitting and light-receiving device is used as a touch sensor, the display device according to the present embodiment can detect the proximity or contact of an object by using the light-emitting and light-receiving device.

[0133] The light-emitting and light-receiving device functions as a photoelectric conversion device that detects light incident on the light-emitting and light-receiving device and generates charges. The amount of generated charges is determined based on the amount of incident light. In addition, by using an image sensor, data such as changes in the user's facial expression, eye movement, or pupil diameter can be obtained. By analyzing the data, information about the user's physical and mental state can be obtained. Based on the information, by changing the output content of one or both of the display and sound, for example, in a device for VR (Virtual Reality), AR (Augmented Reality), or MR (Mixed Reality), it is possible to ensure that the user can use the device safely.

[0134] The light-emitting and light-receiving device can be manufactured by adding an active layer of a light-receiving device to the configuration of the above-described light-emitting device. In addition, when the light-emitting and light-receiving device is used as a touch sensor, the display device according to the present embodiment can detect the proximity or contact of an object by using the light-emitting and light-receiving device.

[0135] For the light-emitting and light-receiving device, for example, an active layer of a pn-type or pin-type photodiode can be used. In addition, by using an image sensor, data such as changes in the user's facial expression, eye movement, or pupil diameter can be obtained. By analyzing the data, information about the user's physical and mental state can be obtained. Based on the information, by changing the output content of one or both of the display and sound, for example, in a device for VR (Virtual Reality), AR (Augmented Reality), or MR (Mixed Reality), it is possible to ensure that the user can use the device safely.

[0136] In particular, it is preferable to use an active layer of an organic photodiode having a layer containing an organic compound for the light-emitting and light-receiving device. The organic photodiode is easy to thin, lighten, and increase in area, and has a high degree of freedom in shape and design, so it can be applied to various display devices. In addition, by using an image sensor, data such as changes in the user's facial expression, eye movement, or pupil diameter can be obtained. By analyzing the data, information about the user's physical and mental state can be obtained. Based on the information, by changing the output content of one or both of the display and sound, for example, in a device for VR (Virtual Reality), AR (Augmented Reality), or MR (Mixed Reality), it is possible to ensure that the user can use the device safely. In addition, when the light-emitting and light-receiving device is used as a touch sensor, the display device according to the present embodiment can detect the proximity or contact of an object by using the light-emitting and light-receiving device.

[0137] Figures 6A to 6D show cross-sectional views of a display device according to an aspect of the present invention.

[0138] The display device 50A shown in FIG. 6A has a light-emitting and light-receiving device layer 53 and a light-emitting device layer 57 between a substrate 51 and a substrate 59.

[0139] The display device 50B shown in FIG. 6B has a light-emitting and light-receiving device layer 53, a transistor layer 55, and a light-emitting device layer 57 between a substrate 51 and a substrate 59.

[0140] In the display devices 50A and 50B, green (G) light and blue (B) light are emitted from the light-emitting device layer 57, and red (R) light is emitted from the light-emitting and light-receiving device layer 53. Note that, in the display device according to an aspect of the present invention, the color of light emitted from the light-emitting and light-receiving device layer 53 is not limited to red.

[0141] The light-emitting and light-receiving devices included in the light-emitting and light-receiving device layer 53 can detect light incident from outside the display device 50A or the display device 50B. The light-emitting and light-receiving devices can detect, for example, one or both of green (G) light and blue (B) light.

[0142] The display device according to an aspect of the present invention has a plurality of pixels arranged in a matrix. One pixel has one or more sub-pixels. One sub-pixel has one light-emitting and light-receiving device or one light-emitting device. For example, a pixel may have a configuration having three sub-pixels (three colors of R, G, and B, or three colors of yellow (Y), cyan (C), and magenta (M), etc.), or a configuration having four sub-pixels (four colors of R, G, B, and white (W), or four colors of R, G, B, and Y, etc.). ​​​​​​​​​​​It is applicable to (...). At least one color sub-pixel has a light-emitting and light-receiving device. The light-emitting and light-receiving device may be provided for all pixels or for some pixels. Also, one pixel may have a plurality of light-emitting and light-receiving devices.

[0143] The layer 55 having transistors has, for example, transistors electrically connected to the light-emitting and light-receiving device, and transistors electrically connected to the light-emitting device. The layer 55 having transistors may further have wiring, electrodes, terminals, capacitors, resistors, etc.

[0144] The display device according to one aspect of the present invention may have a function of detecting an object such as a finger in contact with the display device or may have a function of detecting an object (not in contact) in proximity to the display device (FIG. 6D). For example, as shown in FIGS. 6C and 6D, the light emitted by the light-emitting device in the layer 57 having the light-emitting device is reflected by the finger 52 in contact with or in proximity to the display device 50B, and the light-emitting and light-receiving device in the layer 53 having the light-emitting and light-receiving device detects the reflected light. Thereby, it can be detected that the finger 52 is in contact with or in proximity to the display device 50B.

[0145] [Pixel] Examples of pixels are shown in FIGS. 6E to 6G and FIGS. 7A to 7D. Note that the arrangement of the sub-pixels is not limited to the order shown. For example, the positions of the sub-pixel (B) and the sub-pixel (G) may be reversed.

[0146] The pixel shown in FIG. 6E has a stripe arrangement, exhibits red light, and has a light-receiving function sub-pixel (R·PD), a sub-pixel (G) that exhibits green light, and a sub-pixel that exhibits blue light It has element (B). In a display device in which a pixel is composed of three sub-pixels of R, G, and B, by replacing the light-emitting device used for the R sub-pixel with a light-emitting and receiving device, a display device having a light-receiving function can be produced for the pixel.

[0147] The pixel shown in FIG. 6F has a matrix array applied, exhibits red light, and has a light-receiving function sub-pixel (R·PD), a sub-pixel (G) that exhibits green light, a sub-pixel (B ) that exhibits blue light, and a sub-pixel (W) that exhibits white light. Even in a display device in which a pixel is composed of four sub- pixels of R, G, B, and W, by replacing the light-emitting device used for the R sub-pixel with a light-emitting and receiving device, a display device having a light-receiving function can be produced for the pixel.

[0148] The pixel shown in FIG. 6G has a pentile array applied and has sub-pixels that exhibit two different colors combined by the pixel. The upper left pixel and the lower right pixel shown in FIG. 6G exhibit red light and have a sub-pixel (R·PD) having a light-receiving function and a sub-pixel (G) that exhibits green light. The lower left pixel and the upper right pixel shown in FIG. 6G have a sub-pixel (G) that exhibits green light and a sub-pixel (B) that exhibits blue light. Note that the shape of the sub-pixel shown in FIG. 6G indicates the upper surface shape of the light-emitting device or the light-emitting and receiving device that the sub- pixel has.

[0149] The pixel shown in FIG. 7A has a sub-pixel (R·PD) that exhibits red light and has a light-receiving function, a sub-pixel (G) that exhibits green light, and a sub-pixel (B) that exhibits blue light. The sub-pixel ( R·PD) is arranged in a column different from the sub-pixel (G) and the sub-pixel (B). The sub-pixel (G) and the sub-pixel (B) are alternately arranged in the same column, with one provided in odd rows and the other in even rows. ​It is provided. Note that the sub-pixels arranged in columns different from those of the sub-pixels of other colors are not limited to red (R), and may be green (G) or blue (B). It is not limited to this, and may be green (G) or blue (B).

[0150] FIG. 7B shows two pixels, and one pixel is composed of three sub-pixels surrounded by a dotted line. The pixel shown in FIG. 7B exhibits red light and has a sub-pixel (R·PD) with a light-receiving function, a sub-pixel (G) that exhibits green light, and a sub-pixel (B) that exhibits blue light. In the left pixel shown in FIG. 7B, the sub-pixel (G) is arranged in the same row as the sub-pixel (R·PD), and the sub-pixel (B) is arranged in the same column as the sub-pixel (R·PD). In the right pixel shown in FIG. 7B, the sub-pixel (G) is arranged in the same row as the sub-pixel (R·PD), and the sub-pixel (B) is arranged in the same column as the sub-pixel (G). In the pixel layout shown in FIG. 7B, in both odd rows and even rows, the sub-pixels (R·PD), sub-pixel (G), and sub-pixel (B) are repeatedly arranged, and in each column, sub-pixels of different colors are arranged in odd rows and even rows. In the pixel layout shown in FIG. 7B, in both odd rows and even rows, the sub-pixels (R·PD), sub-pixel (G), and sub-pixel (B) are repeatedly arranged, and in each column, sub-pixels of different colors are arranged in odd rows and even rows. In the pixel layout shown in FIG. 7B, in both odd rows and even rows, the sub-pixels (R·PD), sub-pixel (G), and sub-pixel (B) are repeatedly arranged, and in each column, sub-pixels of different colors are arranged in odd rows and even rows. In the pixel layout shown in FIG. 7B, in both odd rows and even rows, the sub-pixels (R·PD), sub-pixel (G), and sub-pixel (B) are repeatedly arranged, and in each column, sub-pixels of different colors are arranged in odd rows and even rows. In the pixel layout shown in FIG. 7B, in both odd rows and even rows, the sub-pixels (R·PD), sub-pixel (G), and sub-pixel (B) are repeatedly arranged, and in each column, sub-pixels of different colors are arranged in odd rows and even rows. In the pixel layout shown in FIG. 7B, in both odd rows and even rows, the sub-pixels (R·PD), sub-pixel (G), and sub-pixel (B) are repeatedly arranged, and in each column, sub-pixels of different colors are arranged in odd rows and even rows.

[0151] FIG. 7C is a modified example of the pixel array shown in FIG. 6G. The upper left pixel and the lower right pixel shown in FIG. 7C exhibit red light and have a sub-pixel (R·PD) with a light-receiving function and a sub-pixel (G) that exhibits green light. The upper left pixel and the lower right pixel shown in FIG. 7C exhibit red light and have a sub-pixel (R·PD) with a light-receiving function and a sub-pixel (G) that exhibits green light. The lower left pixel and the upper right pixel shown in FIG. 7C exhibit red light and have a sub-pixel (R·PD) with a light-receiving function and a sub-pixel (B) that exhibits blue light. The lower left pixel and the upper right pixel shown in FIG. 7C exhibit red light and have a sub-pixel (R·PD) with a light-receiving function and a sub-pixel (B) that exhibits blue light. The lower left pixel and the upper right pixel shown in FIG. 7C exhibit red light and have a sub-pixel (R·PD) with a light-receiving function and a sub-pixel (B) that exhibits blue light.

[0152] In FIG. 6G, a sub-pixel (G) that exhibits green light is provided for each pixel. On the other hand, in FIG. 7C, a sub-pixel (R·PD) that exhibits red light and has a light-receiving function is provided for each pixel. In FIG. 6G, a sub-pixel (G) that exhibits green light is provided for each pixel. On the other hand, in FIG. 7C, a sub-pixel (R·PD) that exhibits red light and has a light-receiving function is provided for each pixel. It exists. Since each pixel is provided with a sub-pixel having a light receiving function, in the configuration shown in FIG. 7C, Compared with the configuration shown in FIG. 6G, imaging can be performed with high definition. Thereby, for example , the accuracy of biometric authentication can be improved.

[0153] In addition, the upper surface shape of the light emitting device and the light emitting and receiving device is not particularly limited, and may be a circle, an ellipse, a polygon , a polygon with rounded corners, etc. Regarding the upper surface shape of the light emitting device included in the sub-pixel (G), FIG. 6G shows an example of a circular shape, and FIG. 7C shows an example of a square shape. The upper surface shapes of the light emitting devices and the light emitting and receiving devices of each color may be different from each other, or may be the same for some

[0154] or all colors. In addition, the aperture ratios of the sub-pixels of each color may be different from each other, or may be the same for some or all colors. For example, the aperture ratio of the sub-pixel provided in each pixel (sub-pixel (G) in FIG. 6G, FIG. 7C sub-pixel (R·PD) in FIG. 7C) may be made smaller than the aperture ratios of the sub-pixels of other colors.

[0155] FIG. 7D is a modification of the pixel arrangement shown in FIG. 7C. Specifically, the configuration of FIG. 7D is obtained by rotating the configuration of FIG. 7C by 45°. In FIG. 7C, it has been described that one pixel is constituted by two sub-pixels, but as shown in FIG. 7D, it can also be considered that one pixel is constituted by four sub-pixels. In FIG. 7D, it will be described that one pixel is constituted by four sub-pixels surrounded by a dotted line. One pixel has two sub-pixels (R·PD), one sub-pixel (G), and one sub- pixel (B). In this way, one pixel has a plurality of sub-pixels having a light receiving function.

[0156] In FIG. 7D, it is described that one pixel is constituted by four sub-pixels surrounded by a dotted line. One pixel has two sub-pixels (R·PD), one sub-pixel (G), and one sub- pixel (B). By doing so, imaging can be performed with high precision. Therefore, the accuracy of biometric authentication can be improved. For example, the imaging precision can be set to √2 times the display precision.

[0157] The display device to which the configuration shown in FIG. 7C or FIG. 7D is applied includes p (p is an integer of 2 or more) first light-emitting devices, q (q is an integer of 2 or more) second light-emitting devices, and r (r is an integer greater than p and greater than q) light-emitting and receiving devices. p and r satisfy r = 2p. Also, p, q, and r satisfy r = p + q. One of the first light-emitting device and the second light-emitting device emits green light, and the other emits blue light. The light-emitting and receiving device emits red light and has a light-receiving function.

[0158] For example, when performing touch detection using the light-emitting and receiving device, it is preferable that the light emission from the light source is less likely to be visually recognized by the user. Since blue light has lower visibility than green light, it is preferable to use a light-emitting device that emits blue light as the light source. Therefore, it is preferable that the light-emitting and receiving device has a function of receiving blue light.

[0159] As described above, various pixel arrays can be applied to the display device according to one aspect of the present invention.

[0160] Since the display device according to the present embodiment does not require changing the pixel array to incorporate the light-receiving function into the pixel, the imaging function and one or both of the sensing functions can be added to the display unit without reducing the aperture ratio and the precision.

[0161] [Light-emitting and receiving device] ​​​​​​​​8A to 8E show examples of the layered structure of the light emitting and receiving device.

[0162] The light emitting and receiving device has at least an active layer and a light emitting layer between a pair of electrodes.

[0163] The light-receiving device is made of layers other than the active layer and the light-emitting layer, which are made of materials with high hole injection properties, hole transport Highly conductive materials, highly hole-blocking materials, highly electron-transporting materials, and highly electron-injecting materials Highly electron-blocking or bipolar materials (electron-transporting and hole-transporting The material may further include a layer containing a material having a high optical density.

[0164] The light emitting and receiving devices shown in FIGS. 8A to 8C each include a first electrode 180, a hole injection layer 18 1, hole transport layer 182, active layer 183, light emitting layer 193, electron transport layer 184, electron injection layer 1 85 and a second electrode 189 .

[0165] Each of the light emitting and receiving devices shown in FIGS. 8A to 8C includes an active layer 18 Therefore, the active layer 1 is added to the process of manufacturing the light-emitting device. By simply adding the process of forming the film 83, the light-receiving and light-emitting devices can be formed in parallel with the formation of the light-emitting devices. In addition, the light emitting device and the light receiving / emitting device can be formed on the same substrate. Therefore, it is possible to provide the display with an imaging function and a sensor function without significantly increasing the manufacturing process. The present invention may be provided with one or both of the following functions: sensing and desensitization.

[0166] The stacking order of the light-emitting layer 193 and the active layer 183 is not limited. 1 shows an example in which an active layer 183 is provided on the active layer 183 and a light emitting layer 193 is provided on the active layer 183. In addition, in FIG. 8B, a light-emitting layer 193 is provided on the hole transport layer 182, and on the light-emitting layer 193 an example in which an active layer 183 is provided is shown. Also, the active layer 183 and the light-emitting layer 193 may be in contact with each other as shown in FIGS. 8 A and 8B.

[0167] As shown in FIG. 8C, it is preferable that a buffer layer is sandwiched between the active layer 183 and the light-emitting layer 193. As the buffer layer, at least one layer among a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer , a hole blocking layer, and an electron blocking layer can be used. Alternatively, as the buffer layer, a layer containing a bipolar material may be used. In FIG. 8C, an example in which the hole transport layer 182 is used as the buffer layer is shown.

[0168] By providing a buffer layer between the active layer 183 and the light-emitting layer 193, the transfer of excitation energy from the light-emitting layer 193 to the active layer 183 can be suppressed. Also, the optical path length (cavity length) of the microresonance (microcavity) structure can be adjusted using the buffer layer. Therefore, a light-emitting and receiving device having a buffer layer between the active layer 183 and the light-emitting layer 193 can obtain high luminous efficiency.

[0169] The light-emitting and receiving device shown in FIG. 8D is different from the light-emitting and receiving devices shown in FIGS. 8A and 8C in that it does not have a hole transport layer 182. The light-emitting and receiving device may not have at least one layer among the hole injection layer 181, the hole transport layer 182, the electron transport layer 184, and the electron injection layer 185. Also, the light-emitting and receiving device may have other functional layers such as a hole blocking layer and an electron blocking layer.

[0170]

[0170] The light emitting and receiving device shown in FIG. 8E does not have the active layer 183 and the light emitting layer 193. 8A to 8C in that a layer 186 serving as both a light receiving layer and a light emitting layer is provided.

[0171] The layer 186 serving as both a light-emitting layer and an active layer can be used for the active layer 183, for example. An n-type semiconductor, a p-type semiconductor that can be used for the active layer 183, and a light-emitting layer 193 A layer containing three materials, namely, a light-emitting material capable of emitting light and a light-emitting material capable of emitting light, can be used.

[0172] In addition, the absorption spectrum of the mixture of n-type and p-type semiconductors is The band and the maximum peak of the emission spectrum (PL spectrum) of the luminescent material do not overlap with each other. It is preferable that they are not present, and it is more preferable that they are sufficiently separated.

[0173] In light-receiving devices, a conductive film that transmits visible light is used for the electrode on the side from which light is extracted. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. stomach.

[0174] When the light-receiving device is operated as a light-emitting device, the hole injection layer is connected from the anode to the hole transport layer. A hole injection layer is a layer that contains a material with high hole injection properties. Materials with high electron transfer properties include aromatic amine compounds and hole transport and acceptor materials. (electron accepting material) can be used.

[0175] When the light emitting / receiving device is operated as a light emitting device, the hole transport layer is This layer transports holes injected from the anode to the light-emitting layer. When the active layer is driven as an anode, the hole transport layer transports holes generated in response to incident light in the active layer to the anode. is a layer for transporting holes to. The hole transport layer is a layer containing a hole transporting material. As for the hole transporting material and, 1×10 -6 cm 2 / Vs or higher hole mobility substances are preferred. In addition, as long as it is a substance with higher hole transportability than electrons, other substances can also be used. As the hole transporting material, π-electron excess type heteroaromatic compounds (such as carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton ) and other highly hole transporting materials are preferred. ) etc. are preferred.

[0176] When driving the light-emitting and receiving device as a light-emitting device, the electron transport layer is a layer for transporting electrons injected from the cathode to the light-emitting layer by the electron injection layer. When driving the light-emitting and receiving device as a light-receiving device, the electron transport layer is a layer for transporting electrons generated based on the light incident on the active layer to the cathode The electron transport layer is a layer containing an electron transporting material. As for the electron transporting material and, 1×10 cm / Vs or higher electron mobility substances are preferred. In addition, as long as it is a substance with higher electron transportability than holes, other substances can also be used. As the -6 cm 2 electron transporting material, metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc., in addition, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, etc. oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, etc. Including derivatives of nitrogen-containing heteroaromatic compounds such as indole derivatives, bipyridine derivatives, pyrimidine derivatives, and others Materials with high electron transport properties such as π-electron-deficient heteroaromatic compounds can be used.

[0177] When driving the light-emitting device as a light-emitting device, the electron injection layer injects electrons from the cathode into the electron transport layer. The electron injection layer is a layer that injects electrons. The electron injection layer is a layer containing a material with high electron injection properties. As materials with high electron injection properties, alkali metals, alkaline earth metals, or their compounds can be used. As materials with high electron injection properties, composite materials containing an electron transport material and a donor material (electron-donating material) can also be used. As materials with high electron injection properties, alkali metals, alkaline earth metals, or their compounds can be used. As materials with high electron injection properties, composite materials containing an electron transport material and a donor material (electron-donating material) can also be used.

[0178] The light-emitting layer 193 is a layer containing a light-emitting substance. The light-emitting layer 193 can have one or more light-emitting substances. As the light-emitting substance, substances exhibiting light-emitting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red can be appropriately used. Also, as the light-emitting substance, substances emitting near-infrared light can be used. The light-emitting layer 193 is a layer containing a light-emitting substance. The light-emitting layer 193 can have one or more light-emitting substances. As the light-emitting substance, substances exhibiting light-emitting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red can be appropriately used. Also, as the light-emitting substance, substances emitting near-infrared light can be used.

[0179] Examples of the light-emitting substance include fluorescent materials, phosphorescent materials, TADF materials, quantum dot materials, and the like.

[0180] Examples of the fluorescent material include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, and the like. Examples of the fluorescent material include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, and the like. Examples of the fluorescent material include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, and the like. Examples of the fluorescent material include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, and the like.

[0181] Examples of the phosphorescent material include 4H-triazole skeletons, 1H-triazole skeletons, imidazole ​​An organometallic complex having a zole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton (Especially an iridium complex), an organometallic complex (especially an iridium complex) having a phenylpyridine derivative having an electron-withdrawing group as a ligand, a platinum complex, a rare earth metal complex, etc. are exemplified.

[0182] In addition to the light-emitting substance (guest material), the light-emitting layer 193 may have one or more organic compounds (host materials, assist materials, etc.). As the one or more organic compounds, one or both of a hole-transporting material and an electron-transporting material can be used. Further, as the one or more organic compounds, a bipolar material or a TADF material may be used.

[0183] The light-emitting layer 193 preferably has, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material which are a combination likely to form an exciplex. By adopting such a configuration, efficient light emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from an exciplex to a light-emitting substance (phosphorescent material), can be obtained. By selecting a combination that forms an exciplex that exhibits light emission overlapping the wavelength of the absorption band on the lowest energy side of the light-emitting substance, energy transfer becomes smooth, and efficient light emission can be obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting device can be realized simultaneously.

[0184] As a combination of materials that form an exciplex, it is preferable that the HOMO level (highest occupied orbital level) of the hole-transporting material is a value equal to or higher than the HOMO level of the electron-transporting material. The hole-transporting ​It is preferable that the LUMO level (lowest unoccupied molecular orbital level) of the material is a value equal to or higher than the LUMO level of the electron transporting material. The LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (C V) measurement. This can be done.

[0185] The formation of the exciplex can be confirmed, for example, by comparing the emission spectrum of the hole transporting material, the emission spectrum of the electron transporting material, and the emission spectrum of a mixed film in which these materials are mixed, and observing that the emission spectrum of the mixed film is shifted to a longer wavelength (or has a new peak on the longer wavelength side) than the emission spectra of the individual materials. Alternatively, by comparing the transient photoluminescence (PL) of the hole transporting material, the transient PL of the electron transporting material, and the transient PL of a mixed film in which these materials are mixed, and observing differences in the transient response such that the transient PL lifetime of the mixed film has a longer-lived component or the proportion of the delayed component increases compared to the transient PL lifetimes of the individual materials, it can be confirmed. Also, the above-mentioned transient PL may be read as transient electroluminescence (EL). That is, by comparing the transient EL of the hole transporting material, the transient EL of the electron transporting material, and the transient EL of a mixed film of these, and observing differences in the transient response, the formation of the exciplex can also be confirmed. The emission spectrum of the mixed film is shifted to a longer wavelength (or has a new peak on the longer wavelength side) than the emission spectra of the individual materials. The emission spectrum of the mixed film is shifted to a longer wavelength (or has a new peak on the longer wavelength side) than the emission spectra of the individual materials. The formation of the exciplex can be confirmed by observing the phenomenon that the emission spectrum of the mixed film is shifted to a longer wavelength (or has a new peak on the longer wavelength side) than the emission spectra of the individual materials. Alternatively, by comparing the transient photoluminescence (PL) of the hole transporting material, the transient PL of the electron transporting material, and the transient PL of a mixed film in which these materials are mixed, and observing differences in the transient response such that the transient PL lifetime of the mixed film has a longer-lived component or the proportion of the delayed component increases compared to the transient PL lifetimes of the individual materials, it can be confirmed. Also, the above-mentioned transient PL may be read as transient electroluminescence (EL). That is, by comparing the transient EL of the hole transporting material, the transient EL of the electron transporting material, and the transient EL of a mixed film of these, and observing differences in the transient response, the formation of the exciplex can also be confirmed. The transient photoluminescence (PL) of the hole transporting material, the transient PL of the electron transporting material, and the transient PL of a mixed film in which these materials are mixed are compared. The transient PL lifetime of the mixed film has a longer-lived component or the proportion of the delayed component increases compared to the transient PL lifetimes of the individual materials. The formation of the exciplex can be confirmed by observing differences in the transient response such that the transient PL lifetime of the mixed film has a longer-lived component or the proportion of the delayed component increases compared to the transient PL lifetimes of the individual materials. Also, the above-mentioned transient PL may be read as transient electroluminescence (EL). That is, by comparing the transient EL of the hole transporting material, the transient EL of the electron transporting material, and the transient EL of a mixed film of these, and observing differences in the transient response, the formation of the exciplex can also be confirmed. The above-mentioned transient PL may be read as transient electroluminescence (EL). That is, by comparing the transient EL of the hole transporting material, the transient EL of the electron transporting material, and the transient EL of a mixed film of these, and observing differences in the transient response, the formation of the exciplex can also be confirmed. The transient EL of the hole transporting material, the transient EL of the electron transporting material, and the transient EL of a mixed film of these are compared. The formation of the exciplex can be confirmed by observing differences in the transient response.

[0186] The active layer 183 contains a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In this embodiment, an example of using an organic semiconductor as the semiconductor contained in the active layer is shown. By using an organic semiconductor, the light emitting layer 193 and the active layer can be formed. The property layer 183 and the like can be formed by the same method (for example, vacuum evaporation method), and it is preferable because the manufacturing apparatus can be shared. This is preferable because it can be shared.

[0187] Examples of the material of the n-type semiconductor included in the active layer 183 include fullerenes (for example, C 60 , C 70 and so on ), and electron-accepting organic semiconductor materials such as fullerene derivatives. Fullerenes have a shape like a soccer ball, and this shape is energetically stable. Fullerenes have both deep (low) HOMO levels and LUMO levels. Since fullerenes have deep LUMO levels, they have extremely high electron-accepting (acceptor) properties. Usually, when π-electron conjugation (resonance) spreads in a plane like benzene, the electron-donating (donor) property increases, but fullerenes have a spherical shape, so despite the large spread of π electrons, they have high electron-accepting properties . High electron-accepting properties are beneficial for a light-receiving device because they cause charge separation to occur efficiently at high speed . Both C and C have broad absorption bands in the visible light region. In particular, C is preferable because it has a larger π-electron conjugation system and a broader absorption band in the long wavelength region compared to C 60 , C 70 . 70 is C 6 0 .

[0188] In addition, examples of the material of the n-type semiconductor include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton , metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton , oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridyl N derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives , rhodamine derivatives, triazine derivatives, quinone derivatives, and the like can be mentioned.

[0189] As the material of the p-type semiconductor included in the active layer 183, copper(II) phthalocyanine (Copp er(II) phthalocyanine; CuPc), tetraphenyldibenzope riflanthene (Tetraphenyldibenzoperiflanthene; D BP), zinc phthalocyanine (Zinc Phthalocyanine; ZnPc), tin phthalocyanine (SnPc), quinacridone and other electron-donating organic semiconductor materials can be mentioned. られる。

[0190] In addition, as the material of the p-type semiconductor, carbazole derivatives, thiophene derivatives, furan derivatives , compounds having an aromatic amine skeleton, and the like can be mentioned. Furthermore, as the material of the p-type semiconductor are naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, f luorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, ind ole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quin cridone derivatives, polyphenylene vinylene derivatives, polyparaphenylene derivatives, polyflu orene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, and the like can be mentioned.

[0191] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material. The LUMO level of the electron-donating organic semiconductor material is It is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0192] As the electron-accepting organic semiconductor material, spherical fullerene is used, and as the electron-donating organic semiconductor material, it is preferable to use an organic semiconductor material having a shape close to a plane. Molecules having similar shapes tend to aggregate with each other. When the same kind of molecules aggregate, the energy levels of the molecular orbitals are close to each other, so the carrier transport property can be enhanced.

[0193] For example, the active layer 183 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor.

[0194] The layer 186 that also serves as the light-emitting layer and the active layer is preferably formed using the above-described light-emitting substance, n-type semiconductor, and p-type semiconductor.

[0195] The hole injection layer 181, the hole transport layer 182, the active layer 183, the light-emitting layer 193, the electron transport layer 184 , the electron injection layer 185, and the layer 186 that also serves as the light-emitting layer and the active layer may use either a low molecular weight compound or a high molecular weight compound, and may contain an inorganic compound. Each layer can be formed by a method such as a vapor deposition method (including a vacuum deposition method), a transfer method, a printing method, an inkjet method, a coating method, etc.

[0196] Hereinafter, with reference to FIGS. 9 to 11, the detailed configurations of the light-emitting and receiving device and the light-emitting device included in the display device according to one embodiment of the present invention will be described.

[0197] The display device according to one embodiment of the present invention emits light in a direction opposite to the substrate on which the light-emitting device is formed. It is a top emission type, and emits light on the substrate side where the light-emitting device is formed. ​​​It may be either a mu emission type or a dual emission type that emits light on both sides. .

[0198] In FIGS. 9 to 11, a top emission type display device will be described as an example.

[0199] [Configuration Example 1] The display devices shown in FIGS. 9A and 9B are provided on a substrate 151 via a layer 55 having transistors and include a light-emitting device 47B that emits blue (B) light, a light-emitting device 47G that emits green (G) light, and a light-emitting and receiving device 47R(PD) that emits red (R) light and has a light-receiving function.

[0200] FIG. 9A shows a case where the light-emitting and receiving device 47R(PD) functions as a light-emitting device. In FIG. 9A, an example is shown in which the light-emitting device 47B emits blue light, the light-emitting device 47G emits green light, and the light-emitting and receiving device 47R(PD) emits red light.

[0201] FIG. 9B shows a case where the light-emitting and receiving device 47R(PD) functions as a light-receiving device. In FIG. 9B, an example is shown in which the light-emitting and receiving device 47R(PD) detects the blue light emitted by the light-emitting device 47B and the green light emitted by the light-emitting device 47G.

[0202] The light-emitting device 47B, the light-emitting device 47G, and the light-emitting and receiving device 47R(PD) each have a pixel electrode 191 and a common electrode 115. In this embodiment, an example will be described in which the pixel electrode 191 functions as an anode and the common electrode 115 functions as a cathode.

[0203] In this embodiment, similar to the light-emitting device, in the light-emitting and receiving device 47R(PD) as well, It is described that the pixel electrode 191 functions as an anode and the common electrode 115 functions as a cathode. That is, the light-emitting and light-receiving device 47R(PD) is driven by applying a reverse bias between the pixel electrode 191 and the common electrode 115, so that the light incident on the light-emitting and light-receiving device 47R(PD) can be detected, charges can be generated, and taken out as a current.

[0204] The common electrode 115 is commonly used for the light-emitting device 47B, the light-emitting device 47G, and the light-emitting and light-receiving device 47 R(PD). The pixel electrodes 191 of the light-emitting device 47B, the light-emitting device 47G, and the light-emitting and light-receiving device 47R(PD) are electrically insulated from each other (also referred to as electrically separated).

[0205] The materials and film thicknesses of the pair of electrodes of the light-emitting device 47B, the light-emitting device 47G, and the light-emitting and light-receiving device 47R(PD) can be made equal. Thereby, the manufacturing cost of the display device can be reduced and the manufacturing process can be simplified.

[0206] The configuration of the display device shown in FIGS. 9A and 9B will be specifically described.

[0207] The light-emitting device 47B has a buffer layer 192B, a light-emitting layer 193B, and a buffer layer 194B in this order on the pixel electrode 191. The light-emitting layer 193B has a light-emitting substance that emits blue light. The light-emitting device 47B has a function of emitting blue light.

[0208] The light-emitting device 47G has a buffer layer 192G, a light-emitting layer 193G, and a buffer layer 194G in this order on the pixel electrode 191. The light-emitting layer 193G has a light-emitting substance that emits green light. The light-emitting device 47G has a function of emitting green light.

[0209] The light-emitting device 47R (PD) has a buffer layer 192R, an active layer 1 83, a light-emitting layer 193R, and a buffer layer 194R in this order on the pixel electrode 191. The light-emitting layer 193R has a light-emitting substance that emits red light. The active layer 183 has an organic compound that absorbs light with a shorter wavelength than red light (for example, one or both of green light and blue light). Note that an organic compound that absorbs not only visible light but also ultraviolet light may be used for the active layer 183. The light-emitting device 47R (PD) has a function of emitting red light. The light-emitting device 47R ( PD) has a function of detecting the light emission of at least one of the light-emitting devices 47G and 47B, and preferably has a function of detecting the light emission of both. It is preferable that the active layer 183 has an organic compound that is difficult to absorb red light and absorbs light with a shorter wavelength than red light. Thereby, the light-emitting device 47R (PD) can have a function of efficiently emitting red light and a function of accurately detecting light with a shorter wavelength than red light. The pixel electrode 191, the buffer layer 192R, the buffer layer 192G, the buffer layer 192B, the active layer 183, the light-emitting layer 193R, the light-emitting layer 193G, the light-emitting layer 193B, the buffer layer 194R, the buffer layer 194G, the buffer layer 194B, and the common electrode 115 may each have a single-layer structure or a stacked structure. In the display device shown in FIGS. 9A and 9B, the buffer layer, the active layer, and the light-emitting layer are layers that are separately formed for each device.

[0210] The active layer 183 preferably has an organic compound that is difficult to absorb red light and absorbs light with a shorter wavelength than red light. Thereby, the light-emitting device 47R (PD) can have a function of efficiently emitting red light and a function of accurately detecting light with a shorter wavelength than red light. The active layer 183 preferably has an organic compound that is difficult to absorb red light and absorbs light with a shorter wavelength than red light. Thereby, the light-emitting device 47R (PD) can have a function of efficiently emitting red light and a function of accurately detecting light with a shorter wavelength than red light. Thereby, the light-emitting device 47R (PD) can have a function of efficiently emitting red light and a function of accurately detecting light with a shorter wavelength than red light.

[0211] The pixel electrode 191, the buffer layer 192R, the buffer layer 192G, the buffer layer 192B, the active layer 183, the light-emitting layer 193R, the light-emitting layer 193G, the light-emitting layer 193B, the buffer layer 194R, the buffer layer 194G, the buffer layer 194B, and the common electrode 115 may each have a single-layer structure or a stacked structure. In the display device shown in FIGS. 9A and 9B, the buffer layer, the active layer, and the light-emitting layer are layers that are separately formed for each device.

[0212] In the display device shown in FIGS. 9A and 9B, the buffer layer, the active layer, and the light-emitting layer are layers that are separately formed for each device. In the display device shown in FIGS. 9A and 9B, the buffer layer, the active layer, and the light-emitting layer are layers that are separately formed for each device.

[0213] The buffer layers 192R, 192G, and 192B can each have one or both of a hole injection layer and a hole transport layer. Further, the buffer layers 192R, 192G, and 192B may have an electron blocking layer. The buffer layers 194B, 194G, and 194R can each have one or both of an electron injection layer and an electron transport layer. Further, the buffer layers 194R, 194G, and 194B may have a hole blocking layer. Note that for the materials and the like of each layer constituting the light-emitting device, reference can be made to the description of each layer constituting the above-described light-emitting and light-receiving device. Moreover, the buffer layers 192R, 192G, and 192B can each have one or both of a hole injection layer and a hole transport layer. Further, the buffer layers 192R, 192G, and 192B may have an electron blocking layer. The buffer layers 194B, 194G, and 194R can each have one or both of an electron injection layer and an electron transport layer. Further, the buffer layers 194R, 194G, and 194B may have a hole blocking layer. Note that for the materials and the like of each layer constituting the light-emitting device, reference can be made to the description of each layer constituting the above-described light-emitting and light-receiving device. Moreover, the buffer layers 192R, 192G, and 192B can each have one or both of a hole injection layer and a hole transport layer. Further, the buffer layers 192R, 192G, and 192B may have an electron blocking layer. The buffer layers 194B, 194G, and 194R can each have one or both of an electron injection layer and an electron transport layer. Further,

[0214] [Configuration Example 2] As shown in FIGS. 10A and 10B, the light-emitting devices 47B, 47G, and the light-emitting and light-receiving device 47R (PD) may have a common layer between a pair of electrodes. Thereby, a light-emitting and light-receiving device can be incorporated into a display device without significantly increasing the manufacturing process. Moreover, the light-emitting devices 47B, 47G, and the light-emitting and light-receiving device 47R (PD) shown in FIG. 10A have a common layer 112 and a common layer 114 in addition to the configuration shown in FIGS. 9A and 9B.

[0215] The light-emitting devices 47B, 47G, and the light-emitting and light-receiving device 47R (PD) shown in FIG. 10A have a common layer 112 and a common layer 114 in addition to the configuration shown in FIGS. 9A and 9B.

[0216] The light-emitting devices 47B, 47G, and the light-emitting and light-receiving device 47R (PD) shown in FIG. 10B are different from the configuration shown in FIGS. 9A and 9B in that they do not have the buffer layers 192R, 192G, 192B and the buffer layers 194R, 194G, 194B and have the common layer 112 and the common layer 114.

[0217] The common layer 112 can have one or both of a hole injection layer and a hole transport layer. The common The common layer 114 can have one or both of an electron injection layer and an electron transport layer.

[0218] The common layer 112 and the common layer 114 may each have a single-layer structure or a stacked structure. respectively.

[0219] [Configuration Example 3] The display device shown in FIG. 11A is an example in which the stacked structure shown in FIG. 8C is applied to the light-emitting and receiving device 47R (PD). applied.

[0220] The light-emitting and receiving device 47R (PD) has, on the pixel electrode 191, a hole injection layer 181, an active layer 18 3, a hole transport layer 182R, a light-emitting layer 193R, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 in this order.

[0221] The hole injection layer 181, the electron transport layer 184, the electron injection layer 185, and the common electrode 115 are layers common to the light-emitting device 47G and the light-emitting device 47B. respectively.

[0222] The light-emitting device 47G has, on the pixel electrode 191, a hole injection layer 181, a hole transport layer 182G, a light-emitting layer 193G, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 in this order has.

[0223] The light-emitting device 47B has, on the pixel electrode 191, a hole injection layer 181, a hole transport layer 182B, a light-emitting layer 193B, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 in this order has.

[0224] It is preferable that a microcavity structure is applied to the light-emitting device included in the display device of the present embodiment. Therefore, one of the pair of electrodes included in the light-emitting device is visible light respectively. Preferably, it has an electrode (semi-transmissive and semi-reflective electrode) having transmissivity and reflectivity with respect to , and the other preferably has an electrode (reflective electrode) having reflectivity with respect to visible light. By the light-emitting device having a microcavity structure, the light emission obtained from the light-emitting layer can be resonated between both electrodes, and the light emitted from the light-emitting device can be enhanced.

[0225] Note that the semi-transmissive and semi-reflective electrode can have a laminated structure with an electrode (transparent electrode also referred to as) having transmissivity with respect to visible light. In this specification and the like, respectively, the reflective electrode that functions as a part of the semi-transmissive and semi-reflective electrode is described as a pixel electrode or a common electrode, and the transparent electrode may be described as an optical adjustment layer, but the transparent electrode (optical adjustment layer) can also be said to have the function as a pixel electrode or a common electrode.

[0226] The light transmittance of the transparent electrode is set to 40% or more. For example, for the light-emitting device, it is preferable to use an electrode having a light transmittance of 40% or more for visible light (light with a wavelength of 400 nm or more and less than 750 nm). Also, the visible light reflectance of the semi-transmissive and semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. Also, the resistivity of these electrodes is preferably 1×1 -2 Ωcm or less. Note that when a light-emitting device that emits near-infrared light is used for the display device, the transmittance and reflectance of near-infrared light (light with a wavelength of 750 nm or more and 1300 nm or less) of these electrodes are preferably within the above numerical ranges.

[0227] The hole transport layers 182B, 182G, and 182R each have a function as an optical adjustment layer, This is also acceptable. Specifically, for the light-emitting device 47B, it is preferable to adjust the film thickness of the hole transport layer 182B so that the optical distance between a pair of electrodes becomes an optical distance that enhances blue light. Similarly, for the light-emitting device 47G, it is preferable to adjust the film thickness of the hole transport layer 182G so that the optical distance between a pair of electrodes becomes an optical distance that enhances green light. And for the light-emitting device 47R(PD), it is preferable to adjust the film thickness of the hole transport layer 182R so that the optical distance between a pair of electrodes becomes an optical distance that enhances red light. The layer used as the optical adjustment layer is not limited to the hole transport layer. In the case where the semi-transmissive / semi-reflective electrode has a stacked structure of a reflective electrode and a transparent electrode, the optical distance between a pair of electrodes indicates the optical distance between a pair of reflective electrodes.

[0228] [Configuration Example 4] The display device shown in FIG. 11B is an example in which the stacked structure shown in FIG. 8D is applied to the light-emitting device 47R(PD).

[0229] The light-emitting device 47R(PD) has, in this order, a hole injection layer 181, an active layer 18 3, a light-emitting layer 193R, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 on the pixel electrode 191.

[0230] The hole injection layer 181, the electron transport layer 184, the electron injection layer 185, and the common electrode 115 are layers common to the light-emitting device 47G and the light-emitting device 47B.

[0231] The light-emitting device 47G has, in this order, a hole injection layer 181, a hole transport layer 182G, a light-emitting layer 193G, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 on the pixel electrode 191.

[0232] ​​​​​​​​The light-emitting device 47B has, on the pixel electrode 191, a hole injection layer 181, a hole transport layer 182B, a light-emitting layer 193B, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 in this order. It has.

[0233] The hole transport layer is provided in the light-emitting device 47G and the light-emitting device 47B, and is not provided in the light-receiving and emitting device 47R(PD). Thus, in addition to the active layer and the light-emitting layer, there may be a layer provided only in one of the light-emitting device and the light-receiving and emitting device.

[0234] Hereinafter, with reference to FIGS. 12 to 17, the detailed configuration of a display device according to an aspect of the present invention will be described. Explain.

[0235] [Display device 10A] FIGS. 12A and 12B show cross-sectional views of the display device 10A.

[0236] The display device 10A has a light-emitting device 190B, a light-emitting device 190G, and a light-receiving and emitting device 190R·PD.

[0237] The light-emitting device 190B has a pixel electrode 191, a buffer layer 192B, a light-emitting layer 193B, a buffer layer 194B, and a common electrode 115. The light-emitting device 190B has a function of emitting blue light 21 B.

[0238] The light-emitting device 190G has a pixel electrode 191, a buffer layer 192G, a light-emitting layer 193G, a buffer layer 194G, and a common electrode 115. The light-emitting device 190G has a function of emitting green light 21 G.

[0239] The light-receiving and emitting device 190R·PD has a pixel electrode 191, a buffer layer 192R, an active layer 183 ​, a light-emitting layer 193R, a buffer layer 194R, and a common electrode 115. The light-emitting and light-receiving device 190R·PD has a function of emitting red light 21R and a function of detecting light 22. .

[0240] FIG. 12A shows a case where the light-emitting and light-receiving device 190R·PD functions as a light-emitting device. . In FIG. 12A, an example is shown in which the light-emitting device 190B emits blue light, the light-emitting device 190G emits green light, and the light-emitting and light-receiving device 190R·PD emits red light.

[0241] FIG. 12B shows a case where the light-emitting and light-receiving device 190R·PD functions as a light-receiving device. . In FIG. 12B, an example is shown in which the light-emitting and light-receiving device 190R·PD detects the blue light emitted by the light-emitting device 190B and the green light emitted by the light-emitting device 190G.

[0242] The pixel electrode 191 is located on the insulating layer 214. The end of the pixel electrode 191 is covered by the partition wall 216 . Two adjacent pixel electrodes 191 are electrically insulated from each other by the partition wall 216 (also referred to as being electrically separated from each other).

[0243] As the partition wall 216, an organic insulating film is preferable. Examples of materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins. The partition wall 216 is a layer that transmits visible light. Details will be described later , but instead of the partition wall 216, a partition wall 217 that blocks visible light may be provided.

[0244] The display device 10A has a light-emitting and light-receiving device 19 between a pair of substrates (substrate 151 and substrate 152). 0R·PD, a light-emitting device 190G, a light-emitting device 190B, a transistor 42, etc. are provided.

[0245] The light-emitting and light-receiving device 190R·PD has a function of detecting light. Specifically, the light-emitting and light-receiving device 190R·PD is a photoelectric conversion device that receives the light 22 incident from the outside of the display device 10A and converts it into an electrical signal. The light 22 can be the light reflected by the object from the light emission of one or both of the light-emitting devices 190G and 190B. Also, the light 22 may be incident on the light-emitting and light-receiving device 190R·PD through a lens.

[0246] The light-emitting device 190 has a function of emitting visible light. Specifically, the light-emitting device 190 is an electroluminescent device that emits light toward the substrate 152 side by applying a voltage between the pixel electrode 191 and the common electrode 115 (see light 21G, light 21B).

[0247] The buffer layer 192, the light-emitting layer 193, and the buffer layer 194 can also be referred to as an organic layer (a layer containing an organic compound) or an EL layer. The pixel electrode 191 preferably has a function of reflecting visible light. The common electrode 115 has a function of transmitting visible light.

[0248] The pixel electrode 191 is electrically connected to the source or drain of the transistor 42 through an opening provided in the insulating layer 214. The transistor 42 has a function of controlling the driving of the light-emitting device or the light-emitting and light-receiving device.

[0249] At least a part of the circuit electrically connected to the light-emitting and light-receiving device 190R·PD is the emission of each color.​​​​ It is preferable that it is formed of the same material and by the same process as the circuit electrically connected to the optical device 190. Thereby, compared with the case where two circuits are formed separately, the thickness of the display device can be reduced, and the manufacturing process can be simplified.

[0250] The light-emitting and light-receiving device 190R·PD and the light-emitting devices of respective colors 190 are each preferably covered with a protective layer 19 5. In FIG. 12A and the like, the protective layer 195 is provided in contact with the common electrode 115. By providing the protective layer 195, entry of impurities such as the light-emitting and light-receiving device 190R·PD and the light-emitting devices of respective colors can be suppressed, and the light-emitting and light-receiving device 190R ·PD and the light-emitting devices of respective colors can be enhanced. Further, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142.

[0251] A light-shielding layer BM is provided on the surface of the substrate 152 on the side of the substrate 151. The light-shielding layer BM has openings at positions overlapping the light-emitting devices 190 of respective colors and at positions overlapping the light-emitting and light-receiving device 190R·PD. In the present specification and the like, the position overlapping the light-emitting device 190 specifically refers to the position overlapping the light-emitting region of the light-emitting device 190. Similarly, the position overlapping the light-emitting and light-receiving device 190R·PD specifically refers to the position overlapping the light-emitting region and the light-receiving region of the light-emitting and light-receiving device 190R·PD. 190R·PD specifically refers to the position overlapping the light-emitting region and the light-receiving region of the light-emitting and light-receiving device 190R·PD. region and the light-receiving region.

[0252] As shown in FIG. 12B, the light-emitting and light-receiving device 190R·PD can detect the light reflected by an object from the light emitted by the light-emitting device 190. However, the light emitted by the light-emitting device 190 is reflected within the display device 10A and reaches the light-emitting and light-receiving device 190R·PD without passing through the object. is reflected within the display device 10A and reaches the light-emitting and light-receiving device 190R·PD without passing through the object. There is a case where it may be incident. The light shielding layer BM can suppress the influence of such stray light. For example, when the light shielding layer BM is not provided, the light 2 3 emitted by the light emitting device 190G is reflected by the substrate 152, and the reflected light 24 may be incident on the light emitting and receiving device 190R·PD. By providing the light shielding layer BM, it is possible to suppress the reflected light 24 from being incident on the light emitting and receiving device 190R·PD. Thereby, noise can be reduced, and the sensitivity of the sensor using the light emitting and receiving device 190R·PD can be increased.

[0253] As the light shielding layer BM, a material that blocks the light emitted from the light emitting device can be used. The light shielding layer BM preferably absorbs visible light. As the light shielding layer BM, for example, a black matrix can be formed using a metal material, or , a resin material containing a pigment (such as carbon black) or a dye, etc. The light shielding layer BM may have a laminated structure of a red color filter, a green color filter, and a blue color filter.

[0254] [Display device 10B] The display device 10B shown in FIG. 13A is different from the display device 10A in that the light emitting device 190 and the light emitting and receiving device 190R·P D do not have the buffer layer 192 and the buffer layer 194, respectively, but have the common layer 112 and the common layer 114. In the following description of the display device, the description of the same configuration as the previously described display device may be omitted.

[0255] Note that the laminated structure of the light emitting device 190B, the light emitting device 190G, and the light emitting and receiving device 190R·P D is not limited to the configurations shown in the display devices 10A and 10B. For each device, for example, the laminated structure shown in FIGS. 8 to 11 can be appropriately applied.

[0256] [Indicating device 10C] The indicating device 10C shown in FIG. 13B is different from the indicating device 10B in that it does not have the substrates 151 and 152, but has the substrates 153, substrate 154, the adhesive layer 155, and the insulating layer 212.

[0257] The substrate 153 and the insulating layer 212 are bonded together by the adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by the adhesive layer 142.

[0258] The indicating device 10C is fabricated by transferring the insulating layer 212, the transistor 42, the light-receiving and emitting diode 190R·PD, the light-emitting device 190, etc. formed on the fabrication substrate onto the substrate 153. The substrates 153 and 154 preferably have flexibility respectively. This can enhance the flexibility of the indicating device 10C. For example, it is preferable to use resin for the substrates 153 and 154 respectively. As the substrates 153 and 154, polyester resins such as polyethylene terephthalate (PET)

[0259] and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose resin, etc. can be used respectively. imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose Nanofibers or the like can be used. On one or both of the substrates 153 and 154 , glass having a thickness sufficient to have flexibility may be used.

[0260] For the substrate of the display device of the present embodiment, a film having high optical isotropy may be used. Examples of the film having high optical isotropy include a triacetyl cellulose (TAC, also referred to as cellulose tri acetate) film, a cycloolefin polymer (COP) film, a cyclo olefin copolymer (COC) film, and an acrylic film.

[0261] Hereinafter, with reference to FIGS. 14 to 17, a more detailed configuration of the display device according to one aspect of the present invention will be described.

[0262] [Display device 100A] FIG. 14 shows a perspective view of the display device 100A, and FIG. 15 shows a cross-sectional view of the display device 100A .

[0263] The display device 100A has a configuration in which the substrate 152 and the substrate 151 are bonded together. In FIG. 14 , the substrate 152 is indicated by a broken line.

[0264] The display device 100A includes a display unit 162, a circuit 164, a wiring 165, etc. In FIG. 14, an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on the display device 100A is shown . Therefore, the configuration shown in FIG. 14 can also be referred to as a display module having the display device 100A, an IC, and an FPC . As the circuit 164, for example, a scanning line driving circuit can be used.

[0265]

[0266] ​The wiring 165 has a function of supplying signals and power to the display unit 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173.

[0267] In FIG. 14, an example is shown in which the IC 173 is provided on the substrate 151 by a COG (Chip On Glass) method or a COF (Chip On Film) method or the like. The IC 1 73 can be an IC having, for example, a scanning line driving circuit or a signal line driving circuit. In addition, the display device 100A and the display module may be configured without an IC. Also, the IC may be mounted on the FPC by a COF method or the like.

[0268] FIG. 15 shows an example of a cross section when a part of the region including the FPC 172, a part of the region including the circuit 1 64, a part of the region including the display unit 162, and a part of the region including the end portion of the display device 100A shown in FIG. 14 are each cut.

[0269] The display device 100A shown in FIG. 15 has transistors 201 , transistors 205, transistors 206, transistors 207, light emitting devices 190 B, light emitting devices 190G, light emitting and receiving devices 190R·PD, etc. between the substrate 151 and the substrate 152.

[0270] The substrate 152 and the insulating layer 214 are adhered via an adhesive layer 142. For sealing the light emitting devices 190 B, the light emitting devices 190G, and the light emitting and receiving devices 190R·PD, a solid sealing structure or a hollow sealing structure or the like can be applied. In FIG. 15, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is filled with an inert gas (such as nitrogen or argon). ​​​, a hollow sealing structure is applied. The adhesive layer 142 may be provided overlapping the light-emitting device 190B, the light-emitting device 190G, and the light-emitting and receiving device 190R·PD. Further, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142.

[0271] The light-emitting device 190B has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 1 93B, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to the conductive layer 222b of the transistor 207 through an opening provided in the insulating layer 214. The transistor 207 has a function of controlling the driving of the light-emitting device 190B. The end of the pixel electrode 191 is covered by the partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0272] The light-emitting device 190G has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 1 93G, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to the conductive layer 222b of the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light-emitting device 190G.

[0273] The light-emitting and receiving device 190R·PD has a stacked structure in which a pixel electrode 191, a common layer 112, an active layer 183, a light-emitting layer 193R, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to the transistor through an opening provided in the insulating layer 214. It is electrically connected to the conductive layer 222b included in the stage 205. The transistor 205 has a function of controlling the driving of the light emitting and receiving device 190R·PD. It has a function of controlling the driving of the light emitting and receiving device 190R·PD.

[0274] The light emitted from the light emitting device 190B, the light emitting device 190G, and the light emitting and receiving device 190R·PD is emitted toward the substrate 152 side. Further, light is incident on the light emitting and receiving device 190R·PD through the substrate 152 and the space 143. It is preferable to use a material with high transparency to visible light for the substrate 152. The light is emitted toward the substrate 152 side. Also, light is incident on the light emitting and receiving device 190R·PD through the substrate 152 and the space 143. The substrate 152 is preferably made of a material with high transparency to visible light. The light is incident on the light emitting and receiving device 190R·PD through the substrate 152 and the space 143. It is preferable to use a material with high transparency to visible light for the substrate 152. It is preferable to use a material with high transparency to visible light.

[0275] The pixel electrodes 191 can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are commonly used for the light emitting device 190B, the light emitting device 190G, and the light emitting and receiving device 190R·PD. The light emitting and receiving device 190R·PD has a configuration in which an active layer 183 is added to the configuration of a light emitting device that emits red light. Also, the light emitting device 190B, the light emitting device 190G, and the light emitting and receiving device 190R·PD can have the same configuration except that the configuration of the active layer 183 and the light emitting layer 193 of each color is different. As a result, a light receiving function can be added to the display unit 162 of the display device 100A without significantly increasing the manufacturing process. The common layer 112, the common layer 114, and the common electrode 115 are commonly used for the light emitting device 190B, the light emitting device 190G, and the light emitting and receiving device 190R·PD. The light emitting and receiving device 190R·PD has a configuration in which an active layer 183 is added to the configuration of a light emitting device that emits red light. Also, the light emitting device 190B, the light emitting device 190G, and the light emitting and receiving device 190R·PD can have the same configuration except that the configuration of the active layer 183 and the light emitting layer 193 of each color is different. As a result, a light receiving function can be added to the display unit 162 of the display device 100A without significantly increasing the manufacturing process. The light emitting and receiving device 190R·PD has a configuration in which an active layer 183 is added to the configuration of a light emitting device that emits red light. Also, the light emitting device 190B, the light emitting device 190G, and the light emitting and receiving device 190R·PD can have the same configuration except that the configuration of the active layer 183 and the light emitting layer 193 of each color is different. As a result, a light receiving function can be added to the display unit 162 of the display device 100A without significantly increasing the manufacturing process. The light emitting device 190B, the light emitting device 190G, and the light emitting and receiving device 190R·PD can have the same configuration except that the configuration of the active layer 183 and the light emitting layer 193 of each color is different. As a result, a light receiving function can be added to the display unit 162 of the display device 100A without significantly increasing the manufacturing process. As a result, a light receiving function can be added to the display unit 162 of the display device 100A without significantly increasing the manufacturing process. A light receiving function can be added to the display unit 162 of the display device 100A without significantly increasing the manufacturing process.

[0276] A light shielding layer BM is provided on the surface of the substrate 152 on the side of the substrate 151. The light shielding layer BM has openings at positions overlapping with each of the light emitting device 190B, the light emitting device 190G, and the light emitting and receiving device 190R·PD. By providing the light shielding layer BM, the range in which the light emitting and receiving device 190R·PD detects light can be controlled. Also, by having the light shielding layer BM, the object The light shielding layer BM has openings at positions overlapping with each of the light emitting device 190B, the light emitting device 190G, and the light emitting and receiving device 190R·PD. By providing the light shielding layer BM, the range in which the light emitting and receiving device 190R·PD detects light can be controlled. By providing the light shielding layer BM, the range in which the light emitting and receiving device 190R·PD detects light can be controlled. Also, by having the light shielding layer BM, the object Light is directly incident on the light receiving and emitting devices 190R and 190PD from the light emitting device 190 without passing through a Therefore, a sensor with low noise and high sensitivity can be realized.

[0277] Transistor 201, transistor 205, transistor 206, and transistor 20 7 are all formed on a substrate 151. These transistors are made of the same material and The same process can be used to manufacture the same.

[0278] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are formed. The insulating layer 211 is provided in this order, with a portion of it serving as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. An insulating layer 215 is provided over the transistor. The number of gate insulating layers and the number of transistors are determined by the number of gate insulating layers. There is no limit to the number of insulating layers covering the stamper, and each may be a single layer or two or more layers.

[0279] At least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. It is preferable to use a material such as a fluorine-containing compound. This allows the insulating layer to function as a barrier layer. This structure effectively prevents impurities from diffusing into the transistor from the outside. This can effectively suppress the noise and improve the reliability of the display device.

[0280] The insulating layers 211, 213, and 215 are each made of an inorganic insulating film. As the inorganic insulating film, for example, a silicon nitride film or a silicon oxynitride film is preferable. , such as a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, an aluminum nitride film, etc. can be used. Further, a hafnium oxide film, a hafnium oxynitride film, a hafnium oxynitride film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film , a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, etc. may be used. Further, two or more of the above-mentioned insulating films may be laminated and used. Note that an underlayer film may be provided between the substrate 151 and the transistor. The above-mentioned inorganic insulating film can also be used for the underlayer film.

[0281] Here, the organic insulating film often has lower barrier properties than the inorganic insulating film. Therefore, it is preferable that the organic insulating film has an opening near the end of the display device 100A. Thereby, it is possible to suppress impurities from entering from the end of the display device 100A through the organic insulating film. Or, the organic insulating film may be formed so that the end of the organic insulating film is inside the end of the display device 100A, and the organic insulating film is not exposed at the end of the display device 100A.

[0282] An organic insulating film is suitable for the insulating layer 214 that functions as a planarization layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins.

[0283] In the region 228 shown in FIG. 15, an opening is formed in the insulating layer 214. Thereby, even when an organic insulating film is used for the insulating layer 214, from the outside through the insulating layer 214 to the display unit 1 It is possible to suppress the entry of impurities into 62. Therefore, the reliability of the display device 100A can be improved. be enhanced.

[0284] Transistors 201, 205, 206, and transistor 20 7 have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231 , an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 22 3. Here, the same hatching pattern is applied to a plurality of layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0285] The structure of the transistor included in the display device of the present embodiment is not particularly limited. For example, a planar type transistor, a staggered type transistor, an inverse staggered type transistor, etc. can be used. Also, either a top gate type or a bottom gate type transistor structure may be used. Or, gates may be provided above and below the semiconductor layer in which the channel is formed. may also be possible.

[0286] Transistors 201, 205, 206, and transistor 20 7 are applied with a configuration in which the semiconductor layer in which the channel is formed is sandwiched between two gates. By connecting the two gates and supplying the same signal thereto, the transistor may be driven. Or, among the two gates, a potential for controlling the threshold voltage may be supplied to one, and a potential for driving may be supplied to the other to control the threshold voltage of the transistor. Yes.

[0287] The crystallinity of the semiconductor material used for the transistor is not particularly limited, and any of amorphous semiconductors, semiconductors having crystallinity (microcrystalline semiconductors, polycrystalline semiconductors, single-crystalline semiconductors, or semiconductors having a crystalline region in part) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed. The semiconductor layer of the transistor preferably has a metal oxide (also referred to as an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon, crystalline silicon (such as low-temperature polysilicon, single-crystalline silicon, etc.). The semiconductor layer preferably contains, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and scandium. In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also denoted as IGZO) as the semiconductor layer.

[0288] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide

[0289]

[0290]

[0291] ​​​​​​​​​​​​The atomic ratio is preferably equal to or greater than the atomic ratio of M. For such a metal of the In-M-Zn oxide as the atomic ratio of the elements, compositions such as In:M:Zn = 1:1:1 or a composition in the vicinity thereof, In:M: Zn = 1:1:1.2 or a composition in the vicinity thereof, In:M:Zn = 2:1:3 or a composition in the vicinity thereof, In:M:Zn = 3:1:2 or a composition in the vicinity thereof, In:M:Zn = 4:2 :3 or a composition in the vicinity thereof, In:M:Zn = 4:2:4.1 or a composition in the vicinity thereof, I n:M:Zn = 5:1:3 or a composition in the vicinity thereof, In:M:Zn = 5:1:6 or a composition in the vicinity thereof, In:M:Zn = 5:1:7 or a composition in the vicinity thereof, In:M:Zn = 5 :1:8 or a composition in the vicinity thereof, In:M:Zn = 6:1:6 or a composition in the vicinity thereof, I n:M:Zn = 5:2:5 or a composition in the vicinity thereof, etc. can be mentioned. The composition in the vicinity includes the range of ±30% of the desired atomic ratio.

[0292] For example, when the atomic ratio is described as In:Ga:Zn = 4:2:3 or a composition in the vicinity thereof and the atomic ratio of In is 4, it includes the case where the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. Also, when the atomic ratio is described as In:Ga:Zn = 5:1:6 or a composition in the vicinity thereof and the atomic ratio of In is 5, it includes the case where the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. Further, when the atomic ratio is described as In:Ga:Zn = 1:1:1 or a composition in the vicinity thereof and the atomic ratio of In is 1, it includes the case where the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0293] The transistor included in circuit 164 and the transistor included in display unit 162 may have the same structure or may have different structures. The structures of the plurality of transistors included in circuit 164 may all be the same, or there may be two or more types. Similarly, the structures of the plurality of transistors included in display unit 162 may all be the same, or there may be two or more types.

[0294] A connection portion 204 is provided in a region of substrate 151 where substrate 152 does not overlap. In connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. The upper surface of connection portion 204 exposes conductive layer 166 obtained by processing the same conductive film as pixel electrode 191. Thereby, connection portion 204 and FPC 172 can be electrically connected via connection layer 242.

[0295] Various optical members can be arranged outside substrate 152. Examples of the optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an antireflection layer, and a condenser film. Also, outside substrate 152, an antistatic film for suppressing dust adhesion, a water-repellent film for preventing dirt adhesion, a hard coat film for suppressing the occurrence of scratches during use, a shock absorption layer, etc. may be arranged.

[0296] For substrate 151 and substrate 152, glass, quartz, ceramic, sapphire, resin, etc. can be used respectively. Using a flexible material for substrate 151 and substrate 152 can enhance the flexibility of the display device.

[0297] Examples of the adhesive layer include a photocurable adhesive such as an ultraviolet curable type, a reaction curable adhesive, and a thermosetting adhesive , various curable adhesives such as anaerobic adhesives can be used. These adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EV A (ethylene vinyl acetate) resins, etc. In particular, materials with low moisture permeability such as epoxy resins are preferred. Also, two-component mixed resins may be used. Also, adhesive sheets, etc. may be used .

[0298] As the connection layer, an anisotropic conductive film (ACF: Anisotropic Conduc tive Film), an anisotropic conductive paste (ACP: Anisotropic Con ductive Paste), etc. can be used.

[0299] In addition to the gates, sources, and drains of transistors, materials that can be used for various wirings and electrodes constituting a display device, etc., include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys mainly composed of these metals, etc. These materials can be used as a single layer or in a laminated structure.

[0300] Also, as conductive materials having translucency, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, etc., conductive oxides or graphene can be used. Or, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, etc. , an alloy material containing the metal material can be used. Alternatively, a nitride of the metal material (for example, titanium nitride) may be used. When using the metal material, the alloy material (or their nitrides), it is preferable to make them thin enough to have light transmissibility. Further, the laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers such as various wirings and electrodes constituting the display device, and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) of light-emitting devices and light-emitting and light-receiving devices.

[0301] Examples of the insulating material that can be used for each insulating layer include resins such as acrylic resin and epoxy resin , and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxynitride, silicon nitride, and aluminum oxide.

[0302] [Display Device 100B] Fig. 16 shows a cross-sectional view of the display device 100B.

[0303] The display device 100B mainly differs from the display device 100A in that it has a protective layer 195. For the same configuration as the display device 100A, detailed description will be omitted.

[0304] By providing a protective layer 195 that covers the light-emitting device 190B, the light-emitting device 190G, and the light-emitting and light-receiving device 190R·PD, it is possible to suppress the entry of impurities such as water into the light-emitting device 190B, the light-emitting device 190G, and the light-emitting and light-receiving device 190R·PD, and improve the reliability of the light-emitting device 190B, the light-emitting device 190G, and the light-emitting and light-receiving device 190R·PD. ​​​​It is possible.

[0305] In the region 228 near the end of the display device 100B, through the opening of the insulating layer 214, it is preferable that the insulating layer 215 and the protective layer 195 are in contact with each other. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 195 are in contact with each other. Thereby, it is possible to suppress the entry of impurities into the display unit 162 from the outside through the organic insulating film. Therefore, the reliability of the display device 100B can be improved.

[0306] The protective layer 195 may be a single layer or a laminated structure. For example, the protective layer 195 may have a three-layer structure including an inorganic insulating layer on the common electrode 115, an organic insulating layer on the inorganic insulating layer, and an inorganic insulating layer on the organic insulating layer. At this time, it is preferable that the end of the inorganic insulating film extends outside the end of the organic insulating film.

[0307] Furthermore, a lens may be provided in a region overlapping the light-emitting and light-receiving device 190R·PD. Thereby, the sensitivity and accuracy of the sensor using the light-emitting and light-receiving device 190R·PD can be improved. It is possible.

[0308] The lens preferably has a refractive index of 1.3 or more and 2.5 or less. The lens can be formed using at least one of an inorganic material and an organic material. For example, a material containing resin can be used for the lens. Also, a material containing at least one of an oxide and a sulfide can be used for the lens.

[0309] Specifically, a resin containing chlorine, bromine, or iodine, a resin containing heavy metal atoms, a resin containing an aromatic ring ​​​Resins, resins containing sulfur, etc. can be used for the lens. Or, a material containing nanoparticles of a material having a refractive index higher than that of the resin can be used for the lens. Titanium oxide or zirconium oxide can be used for the nanoparticles. In addition, materials such as cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, an oxide containing indium and tin, or an oxide containing indium, gallium, and zinc can be used for the lens. Or, zinc sulfide can be used for the lens.

[0310] In addition, in the display device 100B, the protective layer 195 and the substrate 152 are bonded by the adhesive layer 142. The adhesive layer 142 is provided so as to overlap with the light-emitting device 190B, the light-emitting device 190G, and the light-emitting and receiving device 190R·PD, respectively, and a solid-sealing structure is applied to the display device 100B. Also, in the display device 100B, the protective layer 195 and the substrate 152 are bonded by the adhesive layer 142. The adhesive layer 142 is provided so as to overlap with the light-emitting device 190B, the light-emitting device 190G, and the light-emitting and receiving device 190R·PD, respectively, and a solid-sealing structure is applied to the display device 100B. In addition, in the display device 100B, the protective layer 195 and the substrate 152 are bonded by the adhesive layer 142. The adhesive layer 142 is provided so as to overlap with the light-emitting device 190B, the light-emitting device 190G, and the light-emitting and receiving device 190R·PD, respectively, and a solid-sealing structure is applied to the display device 100B. In addition, in the display device 100B, the protective layer 195 and the substrate 152 are bonded by the adhesive layer 142. The adhesive layer 142 is provided so as to overlap with the light-emitting device 190B, the light-emitting device 190G, and the light-emitting and receiving device 190R·PD, respectively, and a solid-sealing structure is applied to the display device 100B.

[0311] In addition, in the display device 100B, the protective layer 195 and the substrate 152 are bonded by the adhesive layer 142. The adhesive layer 142 is provided so as to overlap with the light-emitting device 190B, the light-emitting device 190G, and the light-emitting and receiving device 190R·PD, respectively, and a solid-sealing structure is applied to the display device 100B. The adhesive layer 142 is provided so as to overlap with the light-emitting device 190B, the light-emitting device 190G, and the light-emitting and receiving device 190R·PD, respectively, and a solid-sealing structure is applied to the display device 100B. The adhesive layer 142 is provided so as to overlap with the light-emitting device 190B, the light-emitting device 190G, and the light-emitting and receiving device 190R·PD, respectively, and a solid-sealing structure is applied to the display device 100B. The adhesive layer 142 is provided so as to overlap with the light-emitting device 190B, the light-emitting device 190G, and the light-emitting and receiving device 190R·PD, respectively, and a solid-sealing structure is applied to the display device 100B.

[0312] [Display Device 100C] FIG. 17A shows a cross-sectional view of the display device 100C.

[0313] The structure of the transistors in the display device 100C is different from that in the display device 100B.

[0314] The display device 100C has transistors 208, 209, and 210 on the substrate 151. The transistors 208, 209, and 210 include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, and a channel formation region 23.

[0315] The transistors 208, 209, and 210 include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, and a channel formation region 23. The transistors 208, 209, and 210 include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, and a channel formation region 23. A semiconductor layer having 1i and a pair of low-resistance regions 231n, one of the pair of low-resistance regions 231n A conductive layer 222a connected to one of the pair of low-resistance regions 231n, and a conductive layer 222b connected to the other of the pair of low-resistance regions 231n , an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.

[0316] The conductive layers 222a and 222b are respectively connected to the low-resistance regions 231n through openings provided in the insulating layer 225 and the insulating layer 215. One of the conductive layers 222a and 222 b functions as a source, and the other functions as a drain.

[0317] The pixel electrode 191 of the light-emitting device 190G is electrically connected to one of the pair of low-resistance regions 231n of the transistor 208 through the conductive layer 222b.

[0318] The pixel electrode 191 of the light-emitting and receiving device 190R·PD is electrically connected to the other of the pair of low-resistance regions 231n of the transistor 209 through the conductive layer 222b.

[0319] In FIG. 17A, an example is shown in which the insulating layer 225 covers the upper surface and the side surface of the semiconductor layer. On the other hand, in FIG. 17B , the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low-resistance region 231n. For example, by processing the insulating layer 225 using the conductive layer 223 as a mask, the structure shown in FIG. 17B can be fabricated. In FIG. 17B, the insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 2 23, and through the opening of the insulating layer 215, the conductive layers 222a and The conductive layer 222b is connected to the low-resistance region 231n, respectively. Further, an insulating layer 218 covering the transistor may be provided on the conductive layer 22 2a and the conductive layer 222b.

[0320] Further, the display device 100C is different from the display device 100B in that it does not have the substrates 151 and 152, but has the substrates 153, 15 4, the adhesive layer 155, and the insulating layer 212.

[0321] The substrate 153 and the insulating layer 212 are bonded together by the adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by the adhesive layer 142.

[0322] The display device 100C is configured by transferring the insulating layer 212, the transistors 208, 20 9, 210, the light-emitting and receiving device 190R·PD, the light-emitting device 190G, etc. formed on the production substrate onto the substrate 153. The substrates 153 and 154 preferably have flexibility, respectively. Thereby, the flexibility of the display device 100 C can be enhanced.

[0323] The insulating layer 212 may use an inorganic insulating film that can be used for the insulating layers 211 and 215.

[0324] As described above, in the display device of the present embodiment, a light-emitting and receiving device is provided for a sub-pixel that exhibits any color instead of a light-emitting device. By having the light-emitting and receiving device also serve as a light-receiving device, a light-receiving function can be imparted to the pixel without increasing the number of sub-pixels included in the pixel. Further, a light-receiving function can be imparted to the pixel without reducing the resolution of the display device or the aperture ratio of each sub-pixel.

[0325] ​​​​​​ This embodiment can be appropriately combined with other embodiments.

[0326] (Embodiment 3) In this embodiment, a light-emitting device that can be used in a display device according to one aspect of the present invention will be described with reference to FIG. 18.

[0327] The light-emitting device shown in FIG. 18A has an anode 101, an EL layer 103, and a cathode 102. In the light-emitting device shown in FIG. 18A, a single structure in which one EL layer is sandwiched between a pair of electrodes is applied. The EL layer 103 has, from the anode 101 side, a hole injection layer 121, a hole transport layer 122, a light-emitting layer 123, an electron transport layer 124, and an electron injection layer 125. Although not shown in FIGS. 18A to 18D, the light-emitting device may have an optical adjustment layer.

[0328] The anode 101, the cathode 102, the hole injection layer 121, the hole transport layer 122, the light-emitting layer 123, the electron transport layer 124, and the electron injection layer 125 may each have a single-layer structure or a laminated structure.

[0329] The light-emitting device shown in FIG. 18B has an anode 101, an EL layer 103a, a charge generation layer 104, an EL layer 103b, and a cathode 102. In the light-emitting device shown in FIG. 18B, a tandem structure having a charge generation layer 104 between two EL layers is applied.

[0330] In each EL layer of the tandem-structured light-emitting device, the same configuration as the EL layer in the single-structured light-emitting device shown in FIGS. 18A, 18C, 18D, etc. can be applied.

[0331] The charge generation layer 104, when a voltage is applied to the anode 101 and the cathode 102, causes the EL layer 103a ​and a function of injecting electrons into one of the EL layers 103b and holes into the other Therefore, in Fig. 18B, when a voltage is applied so that the potential of the anode 101 becomes higher than that of the cathode 102 electrons are injected from the charge generation layer 104 into the EL layer 103a, and holes are injected into the EL layer 103b.

[0332] In a tandem structure light-emitting device, by making the emission colors of the respective EL layers different, light emission of a desired color can be obtained for the entire light-emitting device. For example, in a light-emitting device having two EL layers, by obtaining light emission of red and green from one EL layer and light emission of blue from the other EL layer, a white light-emitting device can be obtained for the entire light-emitting device. For example, in a light-emitting device having three EL layers, by obtaining light emission of blue from the first EL layer, light emission of green from the second EL layer, and light emission of red from the third EL layer, a white light-emitting device can be obtained for the entire light-emitting device. For example, in a light-emitting device having three E L layers, by obtaining light emission of blue from the first EL layer, light emission of yellow, yellow-green, or green and red from the second EL layer on the first EL layer, and light emission of blue from the third EL layer on the second EL layer, a white light-emitting device can be obtained for the entire light-emitting device. For example, in a light-emitting device having four EL layers, by obtaining light emission of blue from the first EL layer, light emission of yellow, yellow-green, or green from one of the second EL layer and the third EL layer on the first EL layer, light emission of red from the other, and light emission of blue from the fourth EL layer on the second EL layer and the third EL layer, a white light-emitting device can be obtained for the entire light-emitting device.

[0333] ​ The hole transport layer 122 included in the light-emitting device shown in FIGS. 18C and 18D has a two-layer structure including a hole transport layer 122a on the side of the hole injection layer 12 1 and a hole transport layer 122b on the side of the light-emitting layer 123. It exists.

[0334] The electron transport layer 124 included in the light-emitting device shown in FIG. 18D has a two-layer structure including an electron transport layer 124a on the side of the light-emitting layer 123 and an electron transport layer 124b on the side of the electron injection layer 125. It is.

[0335] At least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer included in the light-emitting device of the present embodiment can be a layer common to the light-emitting device and the light-receiving device. Therefore, The manufacturing process can be reduced compared to the case of forming them separately, and the light-emitting device and the light-receiving device can be formed on the same surface. It is. It is possible.

[0336] Hereinafter, materials that can be used for the light-emitting device will be described.

[0337] <Electrode> As materials for forming a pair of electrodes of the light-emitting device, metals, alloys, electrically conductive compounds, and mixtures thereof can be appropriately used. Specifically, indium tin oxide (also referred to as ITO), indium silicon tin oxide (also referred to as ITSO), indium zinc oxide, indium -W-Zn oxide can be mentioned. In addition, aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (A u), etc. u), metals such as platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these appropriately combined can also be used. In addition, those not exemplified above Elements belonging to Group 1 or Group 2 of the periodic table (for example, lithium (Li), cesium ( Cs), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu), ytterbium ( Yb), and alloys containing these appropriately combined, graphene, etc. can be used.

[0338] In addition, when manufacturing a light-emitting device having a microcavity structure, a reflective electrode and a semi-transparent semi-reflective electrode are used. Therefore, one or more desired conductive materials can be used and formed by a single layer or lamination. For the production of the electrode, sputtering method or vacuum evaporation method can be used.

[0339] <Hole injection layer> The hole injection layer 121 preferably has a first compound and a second compound.

[0340] The first compound is an electron-accepting material (acceptor material) and has electron-accepting properties with respect to the second compound.

[0341] The second compound is a hole-transporting material. The hole-transporting material has higher hole-transporting properties than electrons.

[0342] The highest occupied molecular orbital level (HOMO level) of the second compound is preferably relatively low (deep). Specifically, the HOMO level of the second compound is preferably -5.7 eV or more and -5.4 eV or less. When the HOMO level of the second compound is relatively low, the injection of holes into the hole transport layer 12 2 becomes easy, which is preferable.​​​​

[0343] As the first compound, an organic compound having an electron-withdrawing group (particularly a halogen group such as a fluoro group or a cyano group) can be used.

[0344] As the first compound, for example, organic acceptors such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives can be used.

[0345] The second compound preferably has a hole-transporting skeleton. The hole-transporting skeleton preferably has a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton such that the HOMO level of the hole-transporting material does not become too high (shallow).

[0346] The second compound preferably has at least one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton. The second compound may be an aromatic amine having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine having a naphthalene ring, or an aromatic monoamine in which a 9-fluorenyl group is bonded to the nitrogen of an amine via an arylene group.

[0347] It is preferable that the second compound has an N,N-bis(4-biphenyl)amino group because a long-lifetime light-emitting device can be fabricated.

[0348] <Hole transport layer> The hole transport layer 122 is a layer that transports holes injected by the hole injection layer 121 to the light-emitting layer 123.

[0349] The hole transport layer 122 preferably has a third compound. ​​

[0350] The third compound is a hole transporting material. As the hole transporting material, a hole transporting material that can be used for the second compound can be used.

[0351] The HOMO level of the third compound is preferably a value equal to or lower than the HOMO level of the second compound. The difference between the HOMO level of the third compound and the HOMO level of the second compound is preferably within 0.2 eV.

[0352] Each of the second compound and the third compound preferably has at least one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton.

[0353] It is preferable that the second compound and the third compound have the same hole transporting skeleton (particularly a dibenzofuran skeleton) because hole injection becomes smooth.

[0354] It is more preferable that the second compound and the third compound are the same because hole injection becomes smooth.

[0355] When the hole transport layer 122 has a laminated structure, each layer constituting the hole transport layer 122 is a layer that transports holes to the light emitting layer 123.

[0356] The hole transport layer 122a in FIGS. 18C and 18D can have the same configuration as the hole transport layer 122 in FIG. 18A.

[0357] The hole transport layer 122b in FIGS. 18C and 18D (that is, the layer located closest to the light emitting layer 123 among the hole transport layers 122) preferably has a function as an electron blocking layer. ​​​​​​​​​​​

[0358] The positive hole transport layer 122b preferably contains a fourth compound.

[0359] The fourth compound is a positive hole transporting material. As the positive hole transporting material, a positive hole transporting material that can be used for the second compound can be used.

[0360] The HOMO level of the fourth compound is preferably lower than the HOMO level of the third compound . The difference between the HOMO level of the fourth compound and the HOMO level of the third compound is preferably within 0.2 eV .

[0361] The second compound, the third compound, and the fourth compound each preferably have at least one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton . It is preferable that the second compound, the third compound, and the fourth compound have the same positive hole transporting skeleton (particularly a dibenzofuran skeleton), because the injection of positive holes becomes smooth.

[0362] As described above, for the second compound and the third compound (and further the fourth compound), since the difference in HOMO level is small, or they have the same positive hole transporting skeleton (preferably the same positive hole transporting skeleton), the injection of positive holes into the positive hole injection layer and the positive hole transport layer is smoothly performed, and an increase in driving voltage and a shortage of positive holes in the light emitting layer 123 can be prevented.

[0363] As described above, for the second compound and the third compound (and further the fourth compound), since the difference in HOMO level is small, or they have the same positive hole transporting skeleton (preferably the same positive hole transporting skeleton), the injection of positive holes into the positive hole injection layer and the positive hole transport layer is smoothly performed, and an increase in driving voltage and a shortage of positive holes in the light emitting layer 123 can be prevented. By having the same positive hole transporting skeleton (preferably the same positive hole transporting skeleton), the injection of positive holes into the positive hole injection layer and the positive hole transport layer is smoothly performed, and an increase in driving voltage and a shortage of positive holes in the light emitting layer 123 can be prevented.

[0364] <Light emitting layer> The light emitting layer is a layer containing a light emitting substance. The light emitting layer can apply the materials and configurations that can be used for the light emitting layer of the light emitting device in Embodiment 1.

[0365] <Electron transport layer> The electron transport layer 124 is a layer that transports electrons injected from the cathode 102 to the light-emitting layer 123. 。

[0366] The electron transport layer 124 has an electron transporting material and a first substance.

[0367] The electron transporting material has a higher electron transporting property than a hole.

[0368] The electron transporting material used for the electron transport layer 124 preferably has a highest occupied orbital level (HOMO level) of - 6.0 eV or more.

[0369] The electron mobility of the electron transporting material used for the electron transport layer 124 at the square root of the electric field strength [V / cm] of 600 is and is preferably 1×10 -7 cm 2 / Vs or more and 1×10 -5 cm 2 / Vs or less, and more preferably 1×10 -7 cm 2 / Vs or more and 5×10 -5 cm 2 / Vs or less. This is even more preferable.

[0370] The electron mobility of the electron transporting material used for the electron transport layer 124 at the square root of the electric field strength [V / cm] of 600 is preferably smaller than the electron mobility of the host material of the light-emitting layer 123 at the square root of the electric field strength [V / cm] of 600. By reducing the electron transporting property in the electron transport layer 124, the amount of electrons injected into the light-emitting layer 123 can be controlled, and it is possible to prevent the light-emitting layer 123 from being in a state of excessive electrons. from becoming in a state of excessive electrons. from becoming in a state of excessive electrons. from becoming in a state of excessive electrons.

[0371] The electron transporting material used for the electron transport layer 124 preferably has an anthracene skeleton. , it is more preferable to have an anthracene skeleton and a heterocyclic skeleton. As the heterocyclic skeleton is concerned, a nitrogen-containing 5-membered ring skeleton is preferable. As the nitrogen-containing 5-membered ring skeleton, a nitrogen-containing 5-membered ring skeleton containing two heteroatoms in the ring, such as a pyrazole ring, an imidazole ring, an oxazole ring, or a thiazole ring, is particularly preferable.

[0372] The first substance is a metal, a metal salt, a metal oxide, or an organometallic salt.

[0373] Examples of the metal include alkali metals, alkaline earth metals, and rare earth metals. Specifically, Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, etc. are included.

[0374] Examples of the metal salt include, for example, halides of the above metals and carbonates of the above metals. . Specifically, LiF, NaF, KF, RbF, CsF, MgF 2 , CaF 2 , SrF 2 , BaF 2 , LiCl, NaCl, KCl, RbCl, CsCl, MgCl 2 , CaCl 2 , SrCl 2 , BaCl 2 , Li 2 CO 3 , Cs 2 CO 3 and so on.

[0375] Examples of the metal oxide include, for example, oxides of the above metals. Specifically, Li 2 O, Na 2 O, Cs 2 O, MgO, CaO, etc. are included.

[0376] Examples of the organometallic salt include, for example, organometallic complexes.

[0377] The first substance is an organometallic complex having an alkali metal or an alkaline earth metal. This is preferred.

[0378] The first substance is preferably an organometallic complex having a ligand containing nitrogen and oxygen, and an alkali metal or an alkaline earth metal. This is preferred.

[0379] The first substance is preferably an organometallic complex having a quinolinol ligand and an alkali metal or an alkaline earth metal. This is preferred.

[0380] Examples of the organometallic complex include lithium 8-quinolinolate (abbreviation: Liq), sodium 8-quinolinolate (abbreviation: Naq), potassium 8-quinolinolate (abbreviation: Kq), bis(8-quinolinolato)magnesium (abbreviation: Mgq ), bis(8-quinolinolato)zinc (abbreviation: Znq ), etc. 2 ) ), etc. 2 )

[0381] Particularly, Liq is preferred as the first substance.

[0382] As shown in FIG. 18D, the electron transport layer 124 may have an electron transport layer 124a on the light-emitting layer 123 side and an electron transport layer 124b on the cathode 102 side. The concentration ratio of the electron transport material and the first substance in the electron transport layer 124a and the electron transport layer 124b is preferably different. For example, the concentration of the first substance in the electron transport layer 124a is preferably higher than that in the electron transport layer 124b. This is preferred. This is preferred. This is preferred.

[0383] <Electron injection layer> The electron injection layer 125 is a layer that enhances the injection efficiency of electrons from the cathode 102. The difference between the value of the work function of the material and the value of the LUMO level of the material used for the electron injection layer 125 is preferably small (within 0.5 eV).

[0384] <Charge generation layer> When a voltage is applied between the anode 101 and the cathode 102, the charge generation layer 104 has a function of injecting electrons into the EL layer 103a and injecting holes into the EL layer 103b.

[0385] The charge generation layer 104 may be configured to include a hole transporting material and an acceptor material, or may be configured to include an electron transporting material and a donor material. By forming the charge generation layer 104 having such a configuration, it is possible to suppress an increase in the driving voltage when the EL layers are stacked.

[0386] [Light emission model in the light emitting device] The light emission model in the light emitting device of the present embodiment will be described.

[0387] Here, using the hole transport layer 122, the light emitting layer 123, and the electron transport layer 124 shown in FIG. 18A, the light emission model of the light emitting device will be described. The light emitting device is not limited to the configuration of FIG. 18A, and the light emission model can also be applied to other configurations.

[0388] When the light emitting layer 123 is in an electron-excessive state, as shown in FIG. 19A, a light emitting region 123-1 is formed in a local region within the light emitting layer 123. In other words, the width of the light emitting region 123-1 within the light emitting layer 123 is narrow. Therefore, in a local region of the light emitting layer 123, recombination of electrons (e ) and holes (h - ) occurs intensively, and deterioration is promoted. Also, the light + In the light-emitting layer 123, electrons that could not recombine pass through the light-emitting layer 123, resulting in a possible reduction in lifespan, or luminous efficiency.

[0389] On the other hand, in the light-emitting device according to one aspect of the present invention, by reducing the electron transport property in the electron transport layer 124, the width of the light-emitting region 123-1 in the light-emitting layer 123 can be widened (FIGS. 19B and 19C). By widening the width of the light-emitting region 123-1, the recombination region of electrons and holes in the light-emitting layer 123 can be dispersed. Therefore, a light-emitting device with a long lifespan and good luminous efficiency can be provided.

[0390] As shown in FIG. 19B, in the light-emitting device according to one aspect of the present invention, at the initial stage of driving, the recombination region may extend to the side of the electron transport layer 124. In FIG. 19B, the recombination region in the electron transport layer 124 is shown as region 124-1. Specifically, in the light-emitting device according to one aspect of the present invention, at the initial stage of driving, the hole injection barrier is small, and the electron transport property of the electron transport layer 124 is relatively low, so that the light-emitting region 123-1 (i.e., the recombination region) is formed throughout the light-emitting layer 123, and a recombination region may also be formed in the electron transport layer 124.

[0391] In addition, since the HOMO level of the electron transport material contained in the electron transport layer 124 is relatively high at -6.0 eV or more, a part of the holes reaches the electron transport layer 124, and recombination may occur in the electron transport layer 124. This phenomenon may also occur when the difference in the HOMO levels of the host material (or assist material) contained in the light-emitting layer 123 and the electron transport material contained in the electron transport layer 124 is within 0.2 eV.

[0392] As shown in FIG. 19C, in a light-emitting device according to an aspect of the present invention, as the driving time elapses, the carrier balance changes, and recombination in the electron transport layer 124 becomes less likely to occur. With the light-emitting region 123-1 remaining formed throughout the light-emitting layer 123, by suppressing recombination in the electron transport layer 124, it is possible to effectively contribute the energy of the recombined carriers to light emission. Therefore, the luminance can increase compared to the initial stage of driving. By offsetting the sharp luminance decrease that appears at the initial stage of driving of the light-emitting device, i.e., so-called initial degradation, it is possible to provide a light-emitting device with less initial degradation and a long driving life. In this specification and the like, the above-described light-emitting device may be referred to as a Recombination-Site Tailoring Injection structure (ReSTI structure). As the driving time elapses, the carrier balance changes, and recombination in the electron transport layer 124 becomes less likely to occur. With the light-emitting region 123-1 remaining formed throughout the light-emitting layer 123, by suppressing recombination in the electron transport layer 124, it is possible to effectively contribute the energy of the recombined carriers to light emission. Therefore, the luminance can increase compared to the initial stage of driving. By offsetting the sharp luminance decrease that appears at the initial stage of driving of the light-emitting device, i.e., so-called initial degradation, it is possible to provide a light-emitting device with less initial degradation and a long driving life. In this specification and the like, the above-described light-emitting device may be referred to as a Recombination-Site Tailoring Injection structure (ReSTI structure). With the light-emitting region 123-1 remaining formed throughout the light-emitting layer 123, by suppressing recombination in the electron transport layer 124, it is possible to effectively contribute the energy of the recombined carriers to light emission. Therefore, the luminance can increase compared to the initial stage of driving. By offsetting the sharp luminance decrease that appears at the initial stage of driving of the light-emitting device, i.e., so-called initial degradation, it is possible to provide a light-emitting device with less initial degradation and a long driving life. In this specification and the like, the above-described light-emitting device may be referred to as a Recombination-Site Tailoring Injection structure (ReSTI structure). By suppressing recombination in the electron transport layer 124, it is possible to effectively contribute the energy of the recombined carriers to light emission. Therefore, the luminance can increase compared to the initial stage of driving. By offsetting the sharp luminance decrease that appears at the initial stage of driving of the light-emitting device, i.e., so-called initial degradation, it is possible to provide a light-emitting device with less initial degradation and a long driving life. In this specification and the like, the above-described light-emitting device may be referred to as a Recombination-Site Tailoring Injection structure (ReSTI structure). Therefore, the luminance can increase compared to the initial stage of driving. By offsetting the sharp luminance decrease that appears at the initial stage of driving of the light-emitting device, i.e., so-called initial degradation, it is possible to provide a light-emitting device with less initial degradation and a long driving life. In this specification and the like, the above-described light-emitting device may be referred to as a Recombination-Site Tailoring Injection structure (ReSTI structure). By offsetting the sharp luminance decrease that appears at the initial stage of driving of the light-emitting device, i.e., so-called initial degradation, it is possible to provide a light-emitting device with less initial degradation and a long driving life. In this specification and the like, the above-described light-emitting device may be referred to as a Recombination-Site Tailoring Injection structure (ReSTI structure). In this specification and the like, the above-described light-emitting device may be referred to as a Recombination-Site Tailoring Injection structure (ReSTI structure). In this specification and the like, the above-described light-emitting device may be referred to as a Recombination-Site Tailoring Injection structure (ReSTI structure). In this specification and the like, the above-described light-emitting device may be referred to as a Recombination-Site Tailoring Injection structure (ReSTI structure).

[0393] Here, with reference to FIG. 19D, the normalized luminance over time in the light-emitting device of the present embodiment and the comparative light-emitting device will be described. In FIG. 19D, the thick solid line and the thick dashed-dotted line are the degradation curves of the normalized luminance of the light-emitting device of the present embodiment, and the thick dashed line is the degradation curve of the normalized luminance of the comparative light-emitting device. In FIG. 19D, the thick solid line and the thick dashed-dotted line are the degradation curves of the normalized luminance of the light-emitting device of the present embodiment, and the thick dashed line is the degradation curve of the normalized luminance of the comparative light-emitting device. In FIG. 19D, the thick solid line and the thick dashed-dotted line are the degradation curves of the normalized luminance of the light-emitting device of the present embodiment, and the thick dashed line is the degradation curve of the normalized luminance of the comparative light-emitting device. In FIG. 19D, the thick solid line and the thick dashed-dotted line are the degradation curves of the normalized luminance of the light-emitting device of the present embodiment, and the thick dashed line is the degradation curve of the normalized luminance of the comparative light-emitting device.

[0394] As shown in FIG. 19D, the light-emitting device of the present embodiment and the comparative light-emitting device have different slopes of the degradation curves of the normalized luminance. Specifically, the slope θ2 of the degradation curve of the light-emitting device of the present embodiment is smaller than the slope θ1 of the degradation curve of the comparative light-emitting device. As shown in FIG. 19D, the light-emitting device of the present embodiment and the comparative light-emitting device have different slopes of the degradation curves of the normalized luminance. Specifically, the slope θ2 of the degradation curve of the light-emitting device of the present embodiment is smaller than the slope θ1 of the degradation curve of the comparative light-emitting device. As shown in FIG. 19D, the light-emitting device of the present embodiment and the comparative light-emitting device have different slopes of the degradation curves of the normalized luminance. Specifically, the slope θ2 of the degradation curve of the light-emitting device of the present embodiment is smaller than the slope θ1 of the degradation curve of the comparative light-emitting device.

[0395] As shown in FIG. 19D, the light-emitting device according to an aspect of the present invention may have a maximum value in the luminance degradation curve obtained by a driving test under the condition of a constant current density (thick solid line). As shown in FIG. 19D, the light-emitting device according to an aspect of the present invention may have a maximum value in the luminance degradation curve obtained by a driving test under the condition of a constant current density (thick solid line). line). That is, the light-emitting device according to one aspect of the present invention may exhibit a behavior in which the luminance increases over time. This behavior can offset the rapid deterioration (so-called initial deterioration) at the initial stage of driving. However, the light-emitting device according to one aspect of the present invention is not limited to the above, and for example, as shown by the thick dashed line in FIG. 19D, it does not have a maximum value of luminance, in other words, the slope of the deterioration curve can be reduced without causing an increase in luminance. Therefore, by configuring the light-emitting device to exhibit this behavior, the initial deterioration of the light-emitting device can be reduced, and the driving life can be made very long. When taking the derivative of the deterioration curve having a maximum value, there is a portion where the value becomes 0. Therefore, a light-emitting device having a portion where the derivative of the deterioration curve becomes 0 can be rephrased as a light-emitting device according to one aspect of the present invention.

[0396] In a light-emitting device according to one aspect of the present invention, the electron transport layer 124 preferably has portions with different mixing ratios (concentrations) of an electron transport material and a first substance in the thickness direction. Specifically, it preferably has portions with different mixing ratios (concentrations) of an electron transport material and a metal, a metal salt, a metal oxide, or an organometallic complex.

[0397] In the electron transport layer 124, the concentration of the first substance can be estimated from the detection amounts of atoms and molecules obtained by time-of-flight secondary ion mass spectrometry (ToF-SIMS). In portions composed of the same two types of materials with different mixing ratios, by ToF-SIMS analysis

[0398] F-SIMS:Time-of-flight secondary ion mass spectrometry) The magnitude of each detected value corresponds to the magnitude of the abundance of the atoms or molecules of interest. Thus, by comparing the detected amounts of the electron transporting material and the organometallic complex, an estimate of the mixing ratio can be made.

[0399] The content of the first substance in the electron transport layer 124 is preferably less on the cathode 102 side than on the anode 101 side. That is, it is preferable that the electron transport layer 124 is formed such that the concentration of the first substance increases from the cathode 102 side toward the anode 101 side. Namely, the electron transport layer 124 has a portion where the concentration of the electron transporting material is lower on the light emitting layer 123 side than in a portion where the concentration of the electron transporting material is high. In other words, the electron transport layer 124 has a portion where the concentration of the first substance is high on the light emitting layer 123 side than in a portion where the concentration of the first substance is low.

[0400] In the electron transport layer 124, the electron mobility in a portion where the concentration of the electron transporting material is high (a portion where the concentration of the first substance is low) is preferably 1×10 cm -7 cm 2 / Vs or more and 5×10 -5 cm 2 / Vs or less when the square root of the electric field strength [V / cm] is 600.

[0401] For example, the content (concentration) of the first substance in the electron transport layer 124 can be configured as shown in FIGS. 20A to 20D. Note that FIGS. 20A and 20B show cases where there is no clear boundary in the electron transport layer 124, and FIGS. 20C and 20D show cases where there is a clear boundary in the electron transport layer 124.

[0402] When there is no clear boundary in the electron transport layer 124, the concentrations of the electron transporting material and the first substance ​​​​​​​​​It changes continuously as shown in FIGS. 20A and 20B. Also, when there is a distinct boundary in the electron transport layer 124, the concentrations of the electron transporting material and the first substance change stepwise as shown in FIGS. 20C and 20D. Note that when the concentrations of the electron transporting material and the first substance change stepwise, it is suggested that the electron transport layer 124 is composed of a plurality of layers. For example, FIG. 2 0C shows the case where the electron transport layer 124 has a two-layer stacked structure, and FIG. 20D shows the case where the electron transport layer 124 has a three-layer stacked structure. In FIGS. 20C and 20D, the dashed line represents the region of the boundary between the plurality of layers.

[0403] The change in carrier balance in the light-emitting device according to one aspect of the present invention is considered to be brought about by the change in the electron mobility of the electron transport layer 124.

[0404] In the light-emitting device according to one aspect of the present invention, there is a concentration difference of the first substance inside the electron transport layer 124. The electron transport layer 124 has a region where the concentration of the first substance is high between the region where the concentration of the first substance is low and the light-emitting layer 123. That is, it has a configuration in which the region where the concentration of the first substance is low is located closer to the cathode 102 side than the high concentration region.

[0405] The light-emitting device according to one aspect of the present invention having the above configuration has a very long lifespan. In particular, when the initial luminance is set to 100%, the time until the luminance reaches 95% (also referred to as LT95) can be made extremely long.

[0406] This embodiment can be appropriately combined with other embodiments.

[0407] (Embodiment 4) In this embodiment, it can be used for the OS transistor described in the above embodiment.​​ A metal oxide (also referred to as an oxide semiconductor) will be described.

[0408] The metal oxide preferably contains at least indium or zinc. Particularly preferably, it contains indium and zinc. In addition to these, it is preferable that it contains aluminum, gallium, yttrium, tin, etc. Further, it may contain one kind or a plurality of kinds selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc.

[0409] Also, the metal oxide can be formed by a chemical vapor deposition (CVD) method such as a sputtering method, a metal organic chemical vapor deposition (MOCVD) method, or an atomic layer deposition (ALD) method.

[0410] <Classification of crystal structures> Examples of the crystal structure of the oxide semiconductor include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and polycrystal.

[0411] Note that the crystal structure of the film or substrate is determined by X-ray diffraction (XRD). ​​​​​​​It can be evaluated using a spectrum. For example, it can be evaluated using the XRD spectrum obtained from a GIXD (Grazing-Incidence XRD) measurement. Note that the GIXD method is also referred to as the thin film method or the Seemann-Bohlin method. It can be evaluated using the XRD spectrum obtained from a GIXD (Grazing-Incidence XRD) measurement. Note that the GIXD method is also referred to as the thin film method or the Seemann-Bohlin method. It can be evaluated using the XRD spectrum obtained from a GIXD (Grazing-Incidence XRD) measurement. Note that the GIXD method is also referred to as the thin film method or the Seemann-Bohlin method.

[0412] For example, in the case of a quartz glass substrate, the shape of the peak in the XRD spectrum is almost symmetric. On the other hand, in the case of an IGZO film having a crystal structure, the shape of the peak in the XRD spectrum is asymmetric. The fact that the shape of the peak in the XRD spectrum is asymmetric indicates the presence of crystals in the film or the substrate. In other words, if the shape of the peak in the XRD spectrum is not symmetric, it cannot be said that the film or the substrate is in an amorphous state. On the other hand, in the case of an IGZO film having a crystal structure, the shape of the peak in the XRD spectrum is asymmetric. The fact that the shape of the peak in the XRD spectrum is asymmetric indicates the presence of crystals in the film or the substrate. In other words, if the shape of the peak in the XRD spectrum is not symmetric, it cannot be said that the film or the substrate is in an amorphous state. On the other hand, in the case of an IGZO film having a crystal structure, the shape of the peak in the XRD spectrum is asymmetric. The fact that the shape of the peak in the XRD spectrum is asymmetric indicates the presence of crystals in the film or the substrate. In other words, if the shape of the peak in the XRD spectrum is not symmetric, it cannot be said that the film or the substrate is in an amorphous state. On the other hand, in the case of an IGZO film having a crystal structure, the shape of the peak in the XRD spectrum is asymmetric. The fact that the shape of the peak in the XRD spectrum is asymmetric indicates the presence of crystals in the film or the substrate. In other words, if the shape of the peak in the XRD spectrum is not symmetric, it cannot be said that the film or the substrate is in an amorphous state.

[0413] Also, the crystal structure of the film or the substrate can be evaluated by the diffraction pattern (also referred to as the nano beam electron diffraction pattern) observed by the nano beam electron diffraction method (NBED). For example, in the diffraction pattern of a quartz glass substrate, a halo is observed, and it can be confirmed that the quartz glass is in an amorphous state. Also, the crystal structure of the film or the substrate can be evaluated by the diffraction pattern (also referred to as the nano beam electron diffraction pattern) observed by the nano beam electron diffraction method (NBED). For example, in the diffraction pattern of a quartz glass substrate, a halo is observed, and it can be confirmed that the quartz glass is in an amorphous state. Also, the crystal structure of the film or the substrate can be evaluated by the diffraction pattern (also referred to as the nano beam electron diffraction pattern) observed by the nano beam electron diffraction method (NBED). For example, in the diffraction pattern of a quartz glass substrate, a halo is observed, and it can be confirmed that the quartz glass is in an amorphous state. Also, the crystal structure of the film or the substrate can be evaluated by the diffraction pattern (also referred to as the nano beam electron diffraction pattern) observed by the nano beam electron diffraction method (NBED). For example, in the diffraction pattern of a quartz glass substrate, a halo is observed, and it can be confirmed that the quartz glass is in an amorphous state. Also, in the diffraction pattern of an IGZO film formed at room temperature, a spot-like pattern rather than a halo is observed. Therefore, it is estimated that the IGZO film formed at room temperature is in an intermediate state that is neither a crystalline state nor an amorphous state, and it cannot be concluded that it is in an amorphous state. Also, in the diffraction pattern of an IGZO film formed at room temperature, a spot-like pattern rather than a halo is observed. Therefore, it is estimated that the IGZO film formed at room temperature is in an intermediate state that is neither a crystalline state nor an amorphous state, and it cannot be concluded that it is in an amorphous state. Also, in the diffraction pattern of an IGZO film formed at room temperature, a spot-like pattern rather than a halo is observed. Therefore, it is estimated that the IGZO film formed at room temperature is in an intermediate state that is neither a crystalline state nor an amorphous state, and it cannot be concluded that it is in an amorphous state. Also, in the diffraction pattern of an IGZO film formed at room temperature, a spot-like pattern rather than a halo is observed. Therefore, it is estimated that the IGZO film formed at room temperature is in an intermediate state that is neither a crystalline state nor an amorphous state, and it cannot be concluded that it is in an amorphous state.

[0414] <<Structure of Oxide Semiconductor>> Note that when focusing on the structure, the oxide semiconductor may be classified differently from the above. For example, the oxide semiconductor can be classified into a single crystal oxide semiconductor and other non-single crystal oxide semiconductors. Note that when focusing on the structure, the oxide semiconductor may be classified differently from the above. For example, the oxide semiconductor can be classified into a single crystal oxide semiconductor and other non-single crystal oxide semiconductors. It can be divided. Examples of the non-single crystal oxide semiconductor include the above-mentioned CAAC-OS and nc -OS. In addition, the non-single crystal oxide semiconductor includes a polycrystalline oxide semiconductor, a pseudo-amorphous oxide semiconductor (a-like OS: amorphous-like oxide semi conductor), an amorphous oxide semiconductor, and the like.

[0415] Here, the details of the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described.

[0416] [CAAC-OS] CAAC-OS is an oxide semiconductor having a plurality of crystal regions, and the c-axes of the plurality of crystal regions are arranged in a specific direction. The specific direction is the thickness direction of the CAAC-OS film, the normal direction of the surface on which the CAAC-OS film is formed, or the normal direction of the surface of the CAAC-OS film. Moreover, the crystal region is a region having periodicity in the atomic arrangement. When the atomic arrangement is regarded as a lattice arrangement, the crystal region is also a region where the lattice arrangement is aligned. Furthermore, CAAC-O S has a region where a plurality of crystal regions are connected in the a-b plane direction, and this region may have strain. The strain refers to a portion where the direction of the lattice arrangement changes between a region where the lattice arrangement is aligned and another region where the lattice arrangement is aligned in the region where a plurality of crystal regions are connected. That is, CAAC-OS is an oxide semiconductor with c-axis orientation and no obvious orientation in the a-b plane direction. Note that each of the plurality of crystal regions is composed of one or more minute crystals (crystals with a maximum diameter of less than 10n m). When a crystal region is composed of one minute crystal,

[0417] ​​​​The maximum diameter of the crystal region is less than 10 nm. When the crystal region is composed of a large number of minute crystals, the size of the crystal region may be on the order of several tens of nm. When the crystal region is composed of a large number of minute crystals, the size of the crystal region may be on the order of several tens of nm.

[0418] In an In-M-Zn oxide (element M is one or more selected from aluminum, gallium, yttrium, tin, titanium, etc.), CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium (In) and oxygen (hereinafter referred to as the In layer) and a layer containing element M, zinc (Zn), and oxygen (hereinafter referred to as the (M,Zn) layer) are laminated. Note that indium and element M are mutually substitutable. Therefore, the (M,Zn) layer may contain indium. Also, the In layer may contain element M. Note that the In layer may also contain Zn. The layered structure is observed as a lattice image, for example, in a high-resolution TEM (Transmission Electron Microscope (M,Zn) layer may contain indium. Also, the In layer may contain element M. Note that the In layer may also contain Zn. The layered structure is observed as a lattice image, for example, in a high-resolution TEM (Transmission Electron Microscope (hereinafter referred to as the (M,Zn) layer) are laminated. Note that indium and element M are mutually substitutable. Therefore, ) image. The (M,Zn) layer may contain indium. Also, the In layer may contain element M. Note that the In layer may also contain Zn. The layered structure is observed as a lattice image, for example, in a high-resolution TEM (Transmission Electron Microscope image. When structural analysis is performed on the CAAC-OS film using, for example, an XRD apparatus, in an Out-of-plane XRD measurement using a θ / 2θ scan, a peak indicating c-axis orientation is detected at 2θ = 31° or in the vicinity thereof. Note that the position (2θ value) of the peak indicating c-axis orientation may vary depending on the type and composition of the metal elements constituting CAAC-OS.

[0419] When structural analysis is performed on the CAAC-OS film using, for example, an XRD apparatus, in an Out-of-plane XRD measurement using a θ / 2θ scan, a peak indicating c-axis orientation is detected at 2θ = 31° or in the vicinity thereof. Note that the position (2θ value) of the peak indicating c-axis orientation may vary depending on the type and composition of the metal elements constituting CAAC-OS. = 31° or in the vicinity thereof. Note that the position (2θ value) of the peak indicating c-axis orientation may vary depending on the type and composition of the metal elements constituting CAAC-OS. = 31° or in the vicinity thereof. Note that the position (2θ value) of the peak indicating c-axis orientation may vary depending on the type and composition of the metal elements constituting CAAC-OS.

[0420] Also, for example, in the electron diffraction pattern of the CAAC-OS film, a plurality of bright spots (spots ) are observed. Note that one spot and another spot are observed at point-symmetric positions with the spot of the incident electron beam transmitted through the sample (also referred to as the direct spot) as the center of symmetry. as the center of symmetry. .

[0421] When observing the crystal region from the specific direction, the lattice arrangement within the crystal region is based on a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be a non-regular hexagon. Also, in the above-mentioned strain, there may be lattice arrangements such as pentagons and heptagons. In CAAC-OS, even in the vicinity of the strain, no clear grain boundaries can be confirmed. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice arrangement. This is because CAAC-OS has a dense arrangement of oxygen atoms in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal atoms, etc., so it is considered that it can tolerate strain. . . In CAAC-OS, even in the vicinity of the strain, no clear grain boundaries can be confirmed. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice arrangement. This is because CAAC-OS has a dense arrangement of oxygen atoms in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal atoms, etc., so it is considered that it can tolerate strain. . .

[0422] Note that the crystal structure in which clear grain boundaries are confirmed is so-called polycrystal. Grain boundaries become recombination centers, and carriers are captured, which may cause a decrease in the drain current of the transistor and a decrease in the field-effect mobility. Therefore, CAAC-OS without clear grain boundaries is one of the crystalline oxides having a crystal structure suitable for the semiconductor layer of the transistor. To form CAAC-OS, a configuration having Zn is preferable. For example, In-Zn oxide and In-Ga-Zn oxide are suitable because they can suppress the generation of grain boundaries more than In oxide. . . Therefore, CAAC-OS without clear grain boundaries is one of the crystalline oxides having a crystal structure suitable for the semiconductor layer of the transistor. To form CAAC-OS, a configuration having Zn is preferable. For example, In-Zn oxide and In-Ga-Zn oxide are suitable because they can suppress the generation of grain boundaries more than In oxide. .

[0423] CAAC-OS is a highly crystalline oxide semiconductor in which no clear grain boundaries are confirmed. Therefore, it can be said that in CAAC-OS, a decrease in electron mobility due to grain boundaries is less likely to occur. Moreover, the crystallinity of the oxide semiconductor may decrease due to the incorporation of impurities or the generation of defects. Therefore, it can be said that CAAC-OS is also an oxide semiconductor with few impurities and defects (such as oxygen deficiencies). Therefore, the physical properties of the oxide semiconductor having CAAC-OS are stable. For this reason, the oxide semiconductor having CAAC-OS is heat-resistant and highly reliable. Also, CAAC -OS is stable against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, when CAAC-OS is used for the OS transistor, it becomes possible to expand the degree of freedom in the manufacturing process.

[0424] [nc-OS] nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). In other words, nc-OS has minute crystals. Note that since the size of the minute crystals is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystals are also referred to as nano crystals. Also, no regularity is observed in the crystal orientation among different nano crystals in nc-OS. Therefore, no orientation is observed in the entire film. Therefore, depending on the analysis method, nc-OS may not be distinguishable from a-like OS or amorphous oxide semiconductors. For example, when structural analysis is performed on an nc-OS film using an XR D apparatus, no peak indicating crystallinity is detected in the Out-of-plane XRD measurement using θ / 2θ scan. Also, when electron beam diffraction (also referred to as limited-view electron beam diffraction) is performed on an nc-OS film using an electron beam with a probe diameter larger than that of the nano crystals (for example, 50 nm or more), a diffraction pattern such as a halo pattern is observed. On the other hand, for the nc-OS film, the probes were close to or smaller than the nanocrystals. Electron beam diffraction using an electron beam with a diameter of 1 nm or more and 30 nm or less (nanobeam electron beam) When the light is diffracted, multiple light beams are emitted from the light source within a ring-shaped area centered on the direct spot. An electron diffraction pattern may be obtained in which the spots are observed.

[0425] [a-like OS] The a-like OS is an oxide semiconductor that has a structure between the nc-OS and the amorphous oxide semiconductor. Conductive. A-like OS has voids or low density regions. The OS has lower crystallinity than the nc-OS and CAAC-OS. The OS has a higher hydrogen concentration in the film than the nc-OS and CAAC-OS.

[0426] <<Oxide semiconductor structure>> Next, the details of the above-mentioned CAC-OS will be described. Regarding.

[0427] [CAC-OS] CAC-OS is, for example, a metal oxide made up of elements with a size of 0.5 nm to 10 nm. Preferably, the material is unevenly distributed in a size range of 1 nm to 3 nm or less, or in the vicinity thereof. In the following, it is assumed that one or more metal elements are unevenly distributed in a metal oxide. The region having the metal element has a thickness of 0.5 nm to 10 nm, preferably 1 nm to 3 nm. A state where the pixels are mixed at or near the size is called a mosaic or patch pattern.

[0428] Furthermore, CAC-OS is a mosaic material that is separated into a first region and a second region. It becomes a cloud-like shape, and the first region is distributed in the film (hereinafter also referred to as a cloud-like shape). That is, CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.

[0429] Here, let the atomic ratios of In, Ga, and Zn to the metal elements constituting CAC-OS in the In-Ga-Zn oxide be denoted as [In], [Ga], and [Zn], respectively. For example, in CAC-OS in the In-Ga-Zn oxide, the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film. Also, the second region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Or, for example, the first region is a region where [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region. Also, the second region is a region where [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.

[0430] Specifically, the first region is a region mainly composed of indium oxide, indium zinc oxide, etc. Also, the second region is a region mainly composed of gallium oxide, gallium zinc oxide, etc. That is, the first region can be referred to as a region mainly composed of In. Also, the second region can be referred to as a region mainly composed of Ga.

[0431] Note that there may be a case where no clear boundary can be observed between the first region and the second region.

[0432] ​​​​​In addition, CAC-OS in In-Ga-Zn oxide means that in a material composition containing In, Ga, Zn, and O, a region mainly composed of Ga in part and a region mainly composed of In in part are each mosaic-shaped, and these regions exist randomly. That is, it refers to a structure in which a region mainly composed of Ga in part and a region mainly composed of In in part are each mosaic-shaped, and these regions exist randomly. Therefore, it is presumed that CAC-OS has a structure in which metal elements are unevenly distributed.

[0433] CAC-OS can be formed by, for example, a sputtering method under conditions where the substrate is not intentionally heated. Also, when forming CAC-OS by a sputtering method, as the film-forming gas, any one or more selected from inert gases (typically argon), oxygen gas, and nitrogen gas may be used. Further, the lower the flow rate ratio of oxygen gas to the total flow rate of the film-forming gas during film formation, the more preferable. For example, it is preferable that the flow rate ratio of oxygen gas to the total flow rate of the film-forming gas during film formation is 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0434] Also, for example, in CAC-OS in In-Ga-Zn oxide, it can be confirmed by EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX) that a region mainly composed of In (the first region) and a region mainly composed of Ga (the second region) are unevenly distributed and mixed.

[0435] Here, the first region is a region with higher conductivity compared to the second region. That is, when carriers flow through the first region, the conductivity as a metal oxide is exhibited. Therefore, , the first region is distributed in a cloud-like manner in the metal oxide, so that a high field-effect mobility (μ ) can be realized.

[0436] On the other hand, the second region is a region with high insulating properties compared to the first region. That is, by the second region being distributed in the metal oxide, the leakage current can be suppressed.

[0437] Therefore, when using CAC-OS in a transistor, the conductivity caused by the first region and the insulating property caused by the second region act complementarily, so that the function of switching (On / Off function) can be imparted to CAC-OS. That is, CAC- OS has a conductive function in a part of the material and an insulating function in a part of the material, and the material as a whole has a function as a semiconductor. By separating the conductive function and the insulating function in this way, both functions can be enhanced to the maximum extent. Therefore, by using CAC-OS in a transistor , a high on-current (I on ), a high field-effect mobility (μ), and a good switching operation can be realized.

[0438] In addition, a transistor using CAC-OS has high reliability. Therefore, CAC-OS is optimal for various semiconductor devices including display devices.

[0439] Oxide semiconductors have various structures and each has different characteristics. In one aspect of the present invention, the oxide semiconductor may have two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, a-like OS, CA C-OS, nc-OS, and CAAC-OS.

[0440] <Transistor having an oxide semiconductor> Next, the case where the above oxide semiconductor is used for a transistor will be described.

[0441] By using the above oxide semiconductor for a transistor, a transistor with high field-effect mobility can be realized. Also, a highly reliable transistor can be realized.

[0442] For a transistor, it is preferable to use an oxide semiconductor with a low carrier concentration. For example, the carrier concentration of the oxide semiconductor is 1×10 17 cm -3 or less, preferably 1×10 15 cm -3 or less, more preferably 1×10 13 cm -3 or less, even more preferably 1×10 11 c m -3 or less, even more preferably 1×10 10 cm -3 less than, and 1×10 -9 cm -3 or more. In the case of reducing the carrier concentration of the oxide semiconductor film, the impurity concentration in the oxide semi conductor film may be reduced and the density of defect levels may be reduced. In this specification and the like, a low impurity concentration and a low density of defect levels are referred to as highly pure intrinsic or substantially highly pure intrinsic. Note that an oxide semiconductor with a low carrier concentration may be referred to as a highly pure intrinsic or substantially highly pure intrinsic oxide semiconductor.

[0443] Also, an oxide semiconductor film that is highly pure intrinsic or substantially highly pure intrinsic has a low density of defect levels and thus the trap level density may also be low.

[0444] Also, the time required for the charge trapped in the trap level of the oxide semiconductor to disappear is long く, sometimes behaves as if it were a fixed charge. Therefore, in an oxide semiconductor with a high trap level density, when a channel formation region is formed, the electrical characteristics of the transistor may become unstable.

[0445] Therefore, in order to stabilize the electrical characteristics of the transistor, it is effective to reduce the impurity concentration in the oxide semiconductor. Also, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to reduce the impurity concentration in the adjacent film. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon, etc.

[0446] <Impurity> Here, the effects of various impurities in the oxide semiconductor will be described.

[0447] When silicon or carbon, which is one of the Group 14 elements, is contained in the oxide semiconductor, defect levels are formed in the oxide semiconductor. For this reason, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (the concentration obtained by secondary ion mass spectrometry (SIMS: Secondary Ion Mass Spectrometry)) are set to 2×10 SIMS: Secondary Ion Mass Spectrometry) shall be 2×10 18 atoms / cm 3 or less, preferably 2×10 17 at oms / cm 3 or less.

[0448] In addition, when an alkali metal or an alkaline earth metal is contained in the oxide semiconductor, defect levels may be formed and carriers may be generated. Therefore, a transistor using an oxide semiconductor containing an alkali metal or an alkaline earth metal tends to have normally-on characteristics. ​​​​​​​​Therefore, the concentration of alkali metals or alkaline earth metals in the oxide semiconductor obtained by SIMS shall be 1×10 18 atoms / cm 3 or less, preferably 2×10 16 atoms / cm 3 or less.

[0449] In addition, in the oxide semiconductor, when nitrogen is contained, electrons as carriers are generated, and the carrier concentration increases, and it tends to be n-type. As a result, a transistor using an oxide semiconductor containing nitrogen tends to have normally-on characteristics. Or, in the oxide semiconductor , when nitrogen is contained, trap levels may be formed. As a result, the electrical characteristics of the transistor may become unstable. Therefore, the nitrogen concentration in the oxide semiconductor obtained by SIMS shall be less than 5×10 19 atoms / cm 3 , preferably less than 5×10 18 atom s / cm 3 , more preferably 1×10 18 atoms / cm 3 or less, even more preferably is 5×10 17 atoms / cm 3 or less.

[0450] In addition, hydrogen contained in the oxide semiconductor reacts with oxygen bonded to metal atoms to form water, so oxygen vacancies may be formed. When hydrogen enters the oxygen vacancies, electrons as carriers may be generated. Also, a part of hydrogen may bond with oxygen bonded to metal atoms to generate electrons as carriers. Therefore, a transistor using an oxide semiconductor containing hydrogen tends to have normally-on characteristics. Therefore, hydrogen in the oxide semiconductor It is preferably reduced as much as possible. Specifically, in the oxide semiconductor, the hydrogen concentration obtained by SIM S is less than 1×10 20 atoms / cm 3 , preferably less than 1×1 0 19 atoms / cm 3 , more preferably less than 5×10 18 atoms / cm 3 , and even more preferably less than 1×10 18 atoms / cm 3 .

[0451] Using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of the transistor can impart stable electrical characteristics.

[0452] This embodiment can be appropriately combined with other embodiments.

[0453] (Embodiment 5) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to FIGS. 21 to 23 .

[0454] The electronic device of this embodiment has a display device according to one aspect of the present invention. For example, a display device according to one aspect of the present invention can be applied to the display unit of the electronic device. Since the display device according to one aspect of the present invention has a function of detecting light, biometric authentication can be performed on the display unit, and a touch operation (contact or proximity) can be detected. Thereby, the functionality and convenience of the electronic device can be improved .

[0455] Examples of the electronic device include a television device, a desktop or notebook personal computer, a monitor for a computer, a digital signage, a pachinko machine , etc. ​In addition to electronic devices equipped with relatively large screens such as large game machines, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, portable information terminals, audio playback devices, and the like can be mentioned.

[0456] The electronic device of the present embodiment may have a sensor (one having a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays). It may also be.

[0457] The electronic device of the present embodiment can have various functions. For example, functions of displaying various information (still images, moving images, text images, etc.) on the display unit, touch panel function, calendar, function of displaying date or time, function of executing various software (programs), wireless communication function, function of reading programs or data recorded on a recording medium, etc. can be included. It can have functions such as.

[0458] The electronic device 6500 shown in FIG. 21A is a portable information terminal that can be used as a smartphone. It is a terminal.

[0459] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, buttons 65 04, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function. It has.

[0460] The display device of one aspect of the present invention can be applied to the display unit 6502.

[0461] ​FIG. 21B is a schematic cross-sectional view including the end portion on the microphone 6506 side of the housing 6501.

[0462] A protective member 6510 having translucency is provided on the display surface side of the housing 6501, and within the space surrounded by the housing 6501 and the protective member 6510, a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged. .

[0463] The display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed to the protective member 6510 by an adhesive layer (not shown).

[0464] In a region outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded-back portion. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0465] A flexible display according to an aspect of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Further, since the display panel 6511 is extremely thin, it is possible to mount a large-capacity battery 6518 while suppressing the thickness of the electronic device. Also, by folding back a part of the display panel 6511 and arranging the connection portion of the FPC 6515 on the back side of the pixel portion, a narrow bezel electronic device can be realized.

[0466] By using a display device according to an aspect of the present invention for the display panel 6511, imaging can be performed by the display unit 6502. For example, fingerprints can be imaged by the display panel 6511 and fingerprint authentication can be performed. ​

[0467] The display unit 6502 further includes a touch sensor panel 6513. 2 can be given a touch panel function. The touch sensor panel 6513 can be Capacitive, resistive, surface acoustic wave, infrared, optical, pressure sensitive, etc. Alternatively, the display panel 6511 can function as a touch sensor. In that case, the touch sensor panel 6513 does not need to be provided.

[0468] An example of a television device is shown in FIG. 22A. The television device 7100 has a housing 7101. The display unit 7000 is built into the housing 7101. This shows a configuration in which the above is supported.

[0469] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0470] The television device 7100 shown in FIG. 22A is operated by an operation switch provided on the housing 7101. Or, it can be done by a separate remote control operation device 7111. The television may be provided with a touch sensor, and the television set may be operated by touching the display unit 7000 with a finger or the like. The remote control device 7111 may operate the device 7100. The remote control unit 7111 may have a display unit that displays information output from the The channel and volume can be controlled by the touch panel or the operation keys. The image displayed on the display unit 7000 can be manipulated.

[0471] The television device 7100 includes a receiver and a modem. It can receive general TV broadcasts. Also, by connecting to a wired or wireless communication network via a modem, one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers) information communication can be performed.

[0472] Figure 22B shows an example of a notebook personal computer. The notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated in the housing 7211.

[0473] The display device according to an aspect of the present invention can be applied to the display unit 7000.

[0474] Figures 22C and 22D show an example of digital signage.

[0475] The digital signage 7300 shown in Figure 22C has a housing 7301, a display unit 7000, a speaker 7303, etc. Further, it can have an LED lamp, operation keys (including a power switch or an operation switch), connection terminals, various sensors, a microphone, etc.

[0476] Figure 22D shows a digital signage 7400 attached to a cylindrical column 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the column 7401.

[0477] In Figures 22C and 22D, the display device according to an aspect of the present invention can be applied to the display unit 7000.

[0478] ​​​​​​​​​​​The larger the display unit 7000 is, the more information can be provided at one time. Also, the larger the display unit 7000 is, the more likely it is to catch people's eyes. For example, it can enhance the advertising effect.

[0479] By applying a touch panel to the display unit 7000, not only can images or videos be displayed on the display unit 7000, but also users can operate it intuitively, which is preferred. Also, when used for applications such as providing route information or traffic information, user-friendliness can be improved through intuitive

[0480] operations. Also, as shown in FIGS. 22C and 22D, the digital signage 7300 or the digital signage 7400 is preferably capable of wireless communication with an information terminal device 7311 such as a smartphone held by the user or an information terminal device 7411. For example, the advertisement information displayed on the display unit 7000 can be displayed on the screen of the information terminal device 7311 or the information terminal device 7411. Also, by operating the

[0481] information terminal device 7311 or the information terminal device 7411, the display of the display unit 7000 can be switched. Also, a game can be executed on the digital signage 7300 or the digital signage

[0482] 7400 using the screen of the information terminal device 7311 or the information terminal device 7411 as an operation means (controller). As a result, an , a sensor 9007 (having a function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism gas, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity , gradient, vibration, odor or infrared rays), a microphone 900 8, etc.

[0483] The electronic devices shown in FIGS. 23A to 23F have various functions. For example, functions of displaying various information (still images, moving images, text images, etc.) on a display unit, a touch panel function, a calendar , a function of displaying a date or time, etc., a function of controlling processing by various software (programs), a wireless communication function, a function of reading a program or data recorded on a recording medium and processing it, etc. can be provided. Note that the functions of the electronic device are not limited to these, and various functions can be provided. The electronic device may have a plurality of display units . Further, a camera or the like may be provided in the electronic device to capture still images and moving images and store them in a recording medium (external or built into the camera ), and functions such as a function of displaying the captured images on a display unit may be provided. .

[0484] Details of the electronic devices shown in FIGS. 23A to 23F will be described below.

[0485] FIG. 23A is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 can be used, for example , as a smartphone. Note that the portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, etc. Further, the portable information terminal 9 101 can display character and image information on its plurality of surfaces. In FIG. 23A, three An example of displaying the icon 9050 is shown. Also, the information 9051 indicated by the dashed rectangle is represented It can also be displayed on other surfaces of the display unit 9001. As an example of the information 9051, there are notifications of incoming calls such as e-mails, SNS, and phone calls, titles of e-mails and SNS, sender names, dates and times, times, remaining battery levels, antenna reception strengths, etc. Alternatively, an icon 9050 or the like may be displayed at the position where the information 9051 is displayed.

[0486] FIG. 23B is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which the information 9052, the information 9 053, and the information 9054 are respectively displayed on different surfaces. For example, the user can confirm the information 9053 displayed at a position where it can be observed from above the portable information terminal 9102 in a state where the portable information terminal 9102 is stored in the breast pocket of a jacket. The user can check the display without taking the portable information terminal 9102 out of the pocket and, for example, determine whether to answer a call.

[0487] FIG. 23C is a perspective view showing a wristwatch-type portable information terminal 9200. The portable information terminal 920 0 can be used, for example, as a smartwatch. Also, the display surface of the display unit 9001 is provided in a curved shape, and display can be performed along the curved display surface. Further, the portable information terminal 9200 can communicate with, for example, a wirelessly communicable headset to make a hands-free call. Also, the portable information terminal 9200 can perform data transmission with other information terminals and charging through the connection terminal 90 06. Note that the charging operation may be performed by wireless power supply. Note that the charging operation may be performed by wireless power supply. ​​​​​​​

[0488] Figures 23D to 23F are perspective views showing the foldable portable information terminal 9201. Also , Figure 23D shows the portable information terminal 9201 in the unfolded state, Figure 23F shows the folded state, and Figure 23 E is a perspective view of the state in the middle of changing from one of Figure 23D and Figure 23F to the other. The portable information terminal 9201 is excellent in portability in the folded state and has an excellent display listability with a seamless and wide display area in the unfolded state. The display unit 9001 of the portable information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0489] This embodiment can be appropriately combined with other embodiments.

Description of Reference Numerals

[0490] C1b: capacitance, C1g: capacitance, C1r: capacitance, C2b: capacitance, C2g: capacitance, C2r: capacitance , Cf: capacitance, GL1: wiring, GL2: wiring, M1B: transistor, M1G: transistor , M1R: transistor, M2B: transistor, M2G: transistor, M2R : transistor, M3B: transistor, M3G: transistor, M3R: transistor , M4B: transistor, M4G: transistor, M4R: transistor, M11: transistor , M12: transistor, M13: transistor, M14: transistor, RS : wiring, SE: wiring, SLB: wiring, SLG: wiring, SLR: wiring, TX: wiring, V0: wiring, VCP: wiring, VPI: wiring, VRS: wiring, WX: wiring, 10A: display device, 1 0B: display device, 10C: display device, 21B: light, 21G: light, 21R: light, 22: light, 23: Light, 24: Reflected light, 42: Transistor, 47B: Light-emitting device, 47G: Light-emitting device, 47R: Light-emitting and receiving device, 50A: Display device, 50B: Display device, 51: Substrate, 52: Finger, 53: Layer having a light-emitting and receiving device, 55: Layer having a transistor, 57: Layer having a light-emitting device, 59: Substrate, 100A: Display device, 100B: Display device, 100 C: Display device, 101: Anode, 102: Cathode, 103: EL layer, 103a: EL layer, 10 3b: EL layer, 104: Charge generation layer, 112: Common layer, 114: Common layer, 115: Common electrode, 121: Hole injection layer, 122: Hole transport layer, 122a: Hole transport layer, 122b: Hole transport layer, 123: Light-emitting layer, 123-1: Light-emitting region, 124: Electron transport layer, 124-1: Region 124a: Electron transport layer, 124b: Electron transport layer, 125: Electron injection layer, 142: Adhesive layer, 143: Space, 151: Substrate, 152: Substrate, 153: Substrate, 154: Substrate, 155 : Adhesive layer, 162: Display portion, 164: Circuit, 165: Wiring, 166: Conductive layer, 172: F PC, 173: IC, 180: First electrode, 181: Hole injection layer, 182: Hole transport layer, 182B: Hole transport layer, 182G: Hole transport layer, 182R: Hole transport layer, 183: Active layer 184: Electron transport layer, 185: Electron injection layer, 186: Layer serving as both a light-emitting layer and an active layer, 18 9: Second electrode, 190: Light-emitting device, 190B: Light-emitting device, 190G: Light-emitting device, 190R·PD: Light-emitting and receiving device, 191: Pixel electrode, 192: Buffer layer, 19 2B: Buffer layer, 192G: Buffer layer, 192R: Buffer layer, 193: Light-emitting layer, 1 93B: Light-emitting layer, 193G: Light-emitting layer, 193R: Light-emitting layer, 194: Buffer layer, 194B : Buffer layer, 194G: Buffer layer, 194R: Buffer layer, 195: Protective layer, 201 : Transistor, 204: Connection part, 205: Transistor, 206: Transistor, 20 7: Transistor, 208: Transistor, 209: Transistor, 210: Transist or, 211: Insulating layer, 212: Insulating layer, 213: Insulating layer, 214: Insulating layer, 215: Insulat ing layer, 216: Partition wall, 217: Partition wall, 218: Insulating layer, 221: Conductive layer, 222a: Conductive layer , 222b: Conductive layer, 223: Conductive layer, 225: Insulating layer, 228: Region, 231: Semiconduct or layer, 231i: Channel formation region, 231n: Low-resistance region, 242: Connection layer, 6500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: But ton, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 65 10: Protection member, 6511: Display panel, 6512: Optical member, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Bat tery, 7000: Display unit, 7100: Television device, 7101: Housing, 7103: S tand, 7111: Remote control unit, 7200: Notebook personal computer, 72 11: Housing, 7212: Keyboard, 7213: Pointing device, 7214: Exter nal connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal device, 7400: Digital signage, 7401: Column, 7411: Inform ation terminal device, 9000: Housing, 9001: Display unit, 9003: Speaker, 9005: Operation key , 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Ey e computer, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9200: Portable information terminal, 9201: Portable information terminal< / n> < / n> < / m> < / n> < / n> < / m> < / m> < / n> < / m> < / n> < / n> < / n> < / n> < / n> ​​< / n> < / n> < / n> < / m> < / n> < / n> < / n> < / n> < / n> ​​​< / n> < / n> < / n> < / n> < / n> < / n> < / n> < / n> ​​​

Claims

[Claim 1] a pixel, a first wiring, a second wiring, and a third wiring; The pixel has a first subpixel, the first subpixel includes first to eighth transistors, a first capacitance, and a light emitting / receiving device; one of a source and a drain of the first transistor is electrically connected to the first wiring, and the other of the source and the drain is electrically connected to a gate of the second transistor and one electrode of the first capacitor; one electrode of the light emitting and receiving device is electrically connected to one of a source and a drain of the second transistor, one of a source and a drain of the third transistor, and one of a source and a drain of the fifth transistor; one of a source and a drain of the fourth transistor is electrically connected to the second wiring, and the other of the source and drain of the fourth transistor is electrically connected to the other of the source and drain of the third transistor and the other electrode of the first capacitor; the other of the source and the drain of the fifth transistor is electrically connected to one of the source and the drain of the sixth transistor and to a gate of the seventh transistor; one of a source and a drain of the seventh transistor is electrically connected to one of a source and a drain of the eighth transistor; the other of the source and the drain of the eighth transistor is electrically connected to the third wiring; A display device, wherein the light receiving and emitting device has a function of emitting light of a first color and a function of receiving light of a second color.

Images