Display device

Abstract

To provide a display device with high numerical aperture.SOLUTION: The display device comprises in a pixel: a layer including a first transistor, a second transistor, a first insulator layer, a second insulator layer, a conductive layer, a pixel electrode and a liquid crystal material; and a common electrode. The first insulator layer is positioned on a channel formation region of the first transistor. The conductive layer is positioned on the first insulator layer. The second insulator layer is positioned on the first transistor, the second transistor, the first insulator layer, and the conductive layer. The pixel electrode is positioned on the second insulator layer, the layer including the liquid crystal material is positioned on the pixel electrode, and the common electrode is positioned on the layer including the liquid crystal material. The common electrode overlaps with the conductive layer via the layer including the liquid crystal material and the pixel electrode. The pixel includes a first connection part where the conductive layer is electrically connected to the first transistor and a second connection part where the pixel electrode is electrically connected to the second transistor. The conductive layer, the pixel electrode and the common electrode respectively include functions of transmitting visible light.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to a display device, a display module, and an electronic device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the present invention and include, for example, semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), their driving methods, or their manufacturing methods.

Background Art

[0003] As display devices, flat panel displays typified by liquid crystal display devices and light-emitting display devices are widely used. Silicon is mainly used as the semiconductor material of the transistors constituting these display devices. In recent years, however, technologies for using transistors using metal oxides in the pixels of display devices have also been developed.

[0004] Patent Documents 1 and 2 disclose technologies for using transistors using metal oxides as semiconductor materials in switching elements of pixels of display devices and the like.

[0005] In addition, a storage device having a configuration in which a transistor having an extremely low off-current is used in a memory cell is disclosed in Patent Document 3

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0007] One aspect of the present invention is to provide a display device with high visible light transmittance. Also or, one aspect of the present invention is to provide a display device with a high aperture ratio. Also one aspect of the present invention is to provide a display device with low power consumption. Also one aspect of the present invention is to provide a display device with high reliability. Or to provide a display device capable of stable operation in a wide temperature range. Also one aspect of the present invention is to provide a display device with high convenience.

[0008] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily need to solve all of these problems. It is possible to extract other problems from the description of the specification, drawings, and claims .

Means for Solving the Problems

[0009] One aspect of the present invention is a display device having a first transistor, a second transistor, a first insulating layer, a second insulating layer, a first conductive layer, a pixel electrode, a layer containing a liquid crystal material, and a common electrode in a pixel. The first insulating layer is located over a channel formation region of the first transistor. The first conductive layer is located over the first insulating layer. The second insulating layer is located over the first transistor, the second transistor, the first insulating layer, and the first conductive layer. The pixel electrode is the second ... It is located on the insulating layer. The layer containing the liquid crystal material is located on the pixel electrode. The common electrode is located on the layer containing the liquid crystal material. The common electrode has a region overlapping with the first conductive layer through the layer containing the liquid crystal material and the pixel electrode. The pixel further has a first connection portion and a second connection portion. At the first connection portion, the first conductive layer is electrically connected to the first transistor. At the second connection portion, the pixel electrode is electrically connected to the second transistor. The first conductive layer, the pixel electrode, and the common electrode each have a function of transmitting visible light. The common electrode has a region overlapping with the first conductive layer through the layer containing the liquid crystal material and the pixel electrode. The pixel further has a first connection portion and a second connection portion. At the first connection portion, the first conductive layer is electrically connected to the first transistor. At the second connection portion, the pixel electrode is electrically connected to the second transistor. The first conductive layer, the pixel electrode, and the common electrode each have a function of transmitting visible light.

[0010] Preferably, the pixel further has a second conductive layer. The first conductive layer and the second conductive layer are preferably located on the same surface. The first conductive layer and the second conductive layer are preferably electrically insulated from each other. The common electrode preferably has a region overlapping with the second conductive layer through the layer containing the liquid crystal material and the pixel electrode. Preferably, the first conductive layer and the second conductive layer are located on the same surface. The first conductive layer and the second conductive layer are preferably electrically insulated from each other. The common electrode preferably has a region overlapping with the second conductive layer through the layer containing the liquid crystal material and the pixel electrode. Preferably, the common electrode has a region overlapping with the second conductive layer through the layer containing the liquid crystal material and the pixel electrode.

[0011] Compared with the state where a voltage is applied between the pixel electrode and the common electrode, the transmittance of visible light in the layer containing the liquid crystal material is higher when no voltage is applied between the pixel electrode and the common electrode. Preferably, the transmittance of visible light in the layer containing the liquid crystal material is higher when no voltage is applied between the pixel electrode and the common electrode compared with the state where a voltage is applied between the pixel electrode and the common electrode. Preferably, the transmittance of visible light in the layer containing the liquid crystal material is higher when no voltage is applied between the pixel electrode and the common electrode compared with the state where a voltage is applied between the pixel electrode and the common electrode.

[0012] The layer containing the liquid crystal material preferably has a polymer material. The polymer material is preferably a copolymer of a polyfunctional monomer and a monofunctional monomer. The polyfunctional monomer preferably has a phenyl benzoate skeleton. The monofunctional monomer preferably has a cyclohexylbenzene skeleton. The polymer material is preferably a copolymer of a polyfunctional monomer and a monofunctional monomer. The polyfunctional monomer preferably has a phenyl benzoate skeleton. The polyfunctional monomer preferably has a phenyl benzoate skeleton. The monofunctional monomer preferably has a cyclohexylbenzene skeleton. Preferably, the monofunctional monomer has a cyclohexylbenzene skeleton.

[0013] At the first connection portion, the first transistor preferably has a function of transmitting visible light. Preferably, at the first connection portion, the first transistor has a function of transmitting visible light.

[0014] In the second connection portion, it is preferable that the second transistor has a function of transmitting visible light. Yes.

[0015] The pixel preferably further has a third conductive layer. The first conductive layer and the third conductive layer are preferably located on the same surface. The first conductive layer and the third conductive layer are electrically preferably insulated from each other. In the second connection portion, the pixel electrode has a region in contact with the third conductive layer, and the third conductive layer preferably has a region in contact with the source or drain of the second transistor. region. Yes.

[0016] The source or drain of the second transistor preferably has a function of transmitting visible light. Yes.

[0017] The first insulating layer is preferably located on the first transistor. Also, the first insulating layer preferably has a planarizing function.

[0018] At least one of the gate, source, and drain of the first transistor, and the gate, source, and drain of the second transistor preferably has a first layer and a second layer on the first layer. The second layer preferably has a lower resistance value than the first layer. Yes. Yes.

[0019] Or, at least one of the gate, source, and drain of the first transistor, and the gate, source, and drain of the second transistor preferably has a first layer, a second layer on the first layer, and a third layer on the second layer. The second layer preferably has a lower resistance value than the first layer, and the third layer preferably has a higher reflectance of visible light than the second layer. Yes. Yes, and the third layer preferably has a higher reflectance of visible light than the second layer. It is preferably low. The second layer and the third layer preferably contain at least one same metal element. Preferably.

[0020] The display device according to one aspect of the present invention preferably has a function of displaying by a field sequential drive method. Preferably.

[0021] One aspect of the present invention is a display module including a display device having any of the above configurations and a light emitting device having a light emitting element laminated thereon. The light emitting device has a function of displaying an image. The light emitted by the light emitting element is taken out through the display device. One aspect of the present invention is a module having a display device having any of the above configurations, to which a flexible printed circuit board (hereinafter referred to as FPC) or a connector such as TCP (Tape Carrier Package) is attached, or a module in which an integrated circuit (IC) is mounted by a COG (Chip On Glass) method or a COF (Chip On Film) method. One aspect of the present invention is an electronic device including the above module and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.

[0022] One aspect of the present invention provides a display device with high visible light transmittance. Or, one aspect of the present invention provides a display device with a high aperture ratio. Or, one aspect of the present invention provides a display device with low power consumption. Or, one aspect of the present invention provides a display device with high reliability. Preferably. Preferably. Preferably. Preferably. Preferably.

[0023] Preferably. Preferably.

Advantages of the Invention

[0024] According to one aspect of the present invention, a display device with high visible light transmittance can be provided. Or, according to one aspect of the present invention, a display device with a high aperture ratio can be provided. Or, according to one aspect of the present invention, a display device with low power consumption can be provided. Or, according to one aspect of the present invention, a display device with high reliability can be provided. Preferably. Preferably. A device can be provided. Or, according to one aspect of the present invention, stable operation is possible in a wide temperature range. A display device can be provided. Or, according to one aspect of the present invention, a highly convenient display device can be provided. can be provided.

[0025] Note that the description of these effects does not prevent the existence of other effects. One aspect of the present invention does not necessarily have to have all of these effects. From the description of the specification, drawings, and claims, it is possible to extract other effects.

Brief Description of the Drawings

[0026]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

[0027] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and those skilled in the art can easily understand that the form and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments shown below. Moreover, in the configuration of the invention described below, the same reference numerals are commonly used among different drawings for the same part or parts having the same or similar functions, and the repeated description thereof will be omitted. Also, when referring to the same function, the hatching pattern may be the same, and in some cases, no reference numeral may be attached. In addition, the positions, sizes, ranges, etc. of the respective configurations shown in the drawings may not represent the actual positions, sizes, ranges, etc. for the sake of easy understanding. For this reason, the disclosed invention is not necessarily limited to the positions, sizes, ranges, etc. disclosed in the drawings. It should be noted that the terms "film" and "layer" can be interchanged with each other depending on the case or situation. For example, the term "conductive layer" can be changed to the term "conductive film". Or, for example, the term "insulating film" can be changed to the term "insulating layer".

[0028] (Embodiment 1)

[0029]

[0030]

[0031] ​​​​​​​​​​In the present embodiment, a display device and a display module according to an aspect of the present invention will be described with reference to FIGS. 1 to 1 1.

[0032] A display device according to an aspect of the present invention includes at least a liquid crystal element and two transistors in one pixel . The display device according to an aspect of the present invention has a function for adding a correction signal to an image signal . The correction signal is added to the image signal by capacitive coupling and supplied to the liquid crystal element . Therefore, the liquid crystal element can display a corrected image

[0033] By adding a correction signal to the image signal, a higher voltage can be applied to drive the liquid crystal element compared to the case of using only the image signal . This makes it easier to drive a liquid crystal element having a relatively high driving voltage configuration .

[0034] Also, due to the correction, for example, the liquid crystal element can express more gradations than the gradations that can be expressed using only the image signal .

[0035] Also, due to the correction, the liquid crystal element can be driven at a voltage higher than the output voltage of the source driver . Since the voltage supplied to the liquid crystal element in the pixel can be changed to a desired value , an existing source driver can be diverted, and costs such as designing a new source driver can be reduced . Also, an increase in the output voltage of the source driver can be suppressed, and the power consumption of the source driver can be reduced .

[0036] By applying a high voltage to drive the liquid crystal element, the display device can be used in a wide temperature range , and reliable display can be performed in both low-temperature and high-temperature environments For example, the display device according to one aspect of the present invention can be used as a vehicle-mounted or camera display device. This is possible.

[0037] In addition, since a high voltage can be applied to drive the liquid crystal element, the response speed of the liquid crystal can be improved by over-drive driving in which the voltage applied to the liquid crystal element is temporarily increased to quickly change the alignment of the liquid crystal. This can also improve the response speed of the liquid crystal by over-drive driving in which the voltage applied to the liquid crystal element is temporarily increased to quickly change the alignment of the liquid crystal. This can also improve the response speed of the liquid crystal by over-drive driving in which the voltage applied to the liquid crystal element is temporarily increased to quickly change the alignment of the liquid crystal.

[0038] The correction signal is generated, for example, by an external device and written to each pixel. The generation of the correction signal may be performed in real time using an external device, or the correction signal stored in a recording medium may be read out and synchronized with the image signal. The correction signal is generated, for example, by an external device and written to each pixel. The generation of the correction signal may be performed in real time using an external device, or the correction signal stored in a recording medium may be read out and synchronized with the image signal. The correction signal is generated, for example, by an external device and written to each pixel. The generation of the correction signal may be performed in real time using an external device, or the correction signal stored in a recording medium may be read out and synchronized with the image signal.

[0039] In the display device according to one aspect of the present invention, the supplied image signal is not changed, and a new image signal can be generated by the pixels to which the correction signal is supplied. Compared with the case of generating a new image signal itself using an external device, the load on the external device can be reduced. In addition, the operation for generating a new image signal by pixels can be performed in fewer steps, and it is possible to cope with a display device having a large number of pixels and a short horizontal period. In the display device according to one aspect of the present invention, the supplied image signal is not changed, and a new image signal can be generated by the pixels to which the correction signal is supplied. Compared with the case of generating a new image signal itself using an external device, the load on the external device can be reduced. In addition, the operation for generating a new image signal by pixels can be performed in fewer steps, and it is possible to cope with a display device having a large number of pixels and a short horizontal period. In the display device according to one aspect of the present invention, the supplied image signal is not changed, and a new image signal can be generated by the pixels to which the correction signal is supplied. Compared with the case of generating a new image signal itself using an external device, the load on the external device can be reduced. In addition, the operation for generating a new image signal by pixels can be performed in fewer steps, and it is possible to cope with a display device having a large number of pixels and a short horizontal period. In the display device according to one aspect of the present invention, the supplied image signal is not changed, and a new image signal can be generated by the pixels to which the correction signal is supplied. Compared with the case of generating a new image signal itself using an external device, the load on the external device can be reduced. In addition, the operation for generating a new image signal by pixels can be performed in fewer steps, and it is possible to cope with a display device having a large number of pixels and a short horizontal period. In the display device according to one aspect of the present invention, the supplied image signal is not changed, and a new image signal can be generated by the pixels to which the correction signal is supplied. Compared with the case of generating a new image signal itself using an external device, the load on the external device can be reduced. In addition, the operation for generating a new image signal by pixels can be performed in fewer steps, and it is possible to cope with a display device having a large number of pixels and a short horizontal period.

[0040] Further, in the display device according to one aspect of the present invention, the liquid crystal element has a pair of electrodes and a layer containing a liquid crystal material. In the display device according to one aspect of the present invention, typically, when no voltage is applied between the pair of electrodes (off state), the layer containing the liquid crystal material shows a state in which visible light is transmitted, and when a voltage is applied between the pair of electrodes (on state), a mode (also referred to as a reverse mode) in which the layer containing the liquid crystal material scatters visible light is used. Thereby, the display device Further, in the display device according to one aspect of the present invention, the liquid crystal element has a pair of electrodes and a layer containing a liquid crystal material. In the display device according to one aspect of the present invention, typically, when no voltage is applied between the pair of electrodes (off state), the layer containing the liquid crystal material shows a state in which visible light is transmitted, and when a voltage is applied between the pair of electrodes (on state), a mode (also referred to as a reverse mode) in which the layer containing the liquid crystal material scatters visible light is used. Thereby, the display device Further, in the display device according to one aspect of the present invention, the liquid crystal element has a pair of electrodes and a layer containing a liquid crystal material. In the display device according to one aspect of the present invention, typically, when no voltage is applied between the pair of electrodes (off state), the layer containing the liquid crystal material shows a state in which visible light is transmitted, and when a voltage is applied between the pair of electrodes (on state), a mode (also referred to as a reverse mode) in which the layer containing the liquid crystal material scatters visible light is used. Thereby, the display device Further, in the display device according to one aspect of the present invention, the liquid crystal element has a pair of electrodes and a layer containing a liquid crystal material. In the display device according to one aspect of the present invention, typically, when no voltage is applied between the pair of electrodes (off state), the layer containing the liquid crystal material shows a state in which visible light is transmitted, and when a voltage is applied between the pair of electrodes (on state), a mode (also referred to as a reverse mode) in which the layer containing the liquid crystal material scatters visible light is used. Thereby, the display device Further, in the display device according to one aspect of the present invention, the liquid crystal element has a pair of electrodes and a layer containing a liquid crystal material. In the display device according to one aspect of the present invention, typically, when no voltage is applied between the pair of electrodes (off state), the layer containing the liquid crystal material shows a state in which visible light is transmitted, and when a voltage is applied between the pair of electrodes (on state), a mode (also referred to as a reverse mode) in which the layer containing the liquid crystal material scatters visible light is used. Thereby, the display device In a state where no image is being displayed, the transmissivity of visible light of the display device can be increased. . Therefore, the display device according to one aspect of the present invention can be used, for example, as a transparent display (also referred to as a see-through display).

[0041] When applying the reverse mode, the layer containing the liquid crystal material preferably has a liquid crystal material and a polymer material. Specifically, the layer containing the liquid crystal material may use a polymer liquid crystal, a polymer dispersed liquid crystal (PDLC: Polymer Dispersed Liquid Crystal), a polymer network liquid crystal (PNLC: Polymer Network Liquid Crystal), a polymer stabilized liquid crystal, etc. PDLC:Polymer Dispersed Liquid Crystal), high molecular network liquid crystal (PNLC:Polymer Network Liquid Crystal), etc. can be used.

[0042] When applying the reverse mode, the driving voltage of the liquid crystal element tends to be relatively high. As described above, the display device according to one aspect of the present invention can drive the liquid crystal element by applying a high voltage, so it is a suitable configuration when applying the reverse mode.

[0043] Also, the display device according to one aspect of the present invention preferably has at least two capacitive elements in one pixel. Both of the two capacitive elements are formed of a material that transmits visible light. As a result, the pixel can achieve both a high aperture ratio and a large holding capacitance.

[0044] By increasing the aperture ratio of the display device (which can also be said to be the aperture ratio of the pixel), the transmissivity of visible light in the display device can be increased, so it can be suitably used as a see-through display. Also, by increasing the aperture ratio, the light extraction efficiency (or the transmittance of the pixel) can be increased. Thereby, the power consumption of the display device can be reduced. ​

[0045] By increasing the holding capacitance of the pixel, stable display can be achieved even if the leakage current of a liquid crystal element or the like is large. Also, a liquid crystal material with a large capacitance can be driven. Therefore the range of selection of the liquid crystal material can be widened.

[0046] By increasing the holding capacitance of the pixel, the gradation of the pixel can be held over a long period of time Specifically, by increasing the holding capacitance of the pixel, the image signal written in the previous period can be held without rewriting the image signal every frame period. For example, the gradation of the pixel can be held over a period of several frames or several tens of frames.

[0047] Also, the connection part between the electrode of the transistor and the electrode of the capacitive element or the liquid crystal element preferably has a function of transmitting visible light. Thereby, the aperture ratio of the pixel can be increased.

[0048] Also, the display device according to one aspect of the present invention may not be provided with a polarizing plate. Thereby, the transmittance of visible light in the display device can be increased.

[0049] Also, the display device according to one aspect of the present invention may not be provided with a light-shielding layer such as a black matrix. Thereby, the transmittance of the pixel can be improved.

[0050] <Cross-sectional configuration example of the display device> FIG. 1A shows a cross-sectional view of the display device 10. The display device 10 shown in FIG. 1A includes a substrate 131, transistors SW11, transistors SW12, an insulating layer 215, a conductive layer 115a, a conductive layer 1 115b, an insulating layer 121, a pixel electrode 111a, a layer 112 containing a liquid crystal material, a common electrode 113, and has a substrate 132.

[0051] The display device 10 includes, for each pixel, a liquid crystal element 110, two transistors (transistors SW1 1 and transistor SW12), and two capacitor elements (capacitor element Cw and capacitor element Cs). , and has.

[0052] Transistors SW11 and SW12 are each located on the substrate 131. . The insulating layer 215 is located on transistors SW11 and SW12. The conductive layers 115a and 115b are each located on the insulating layer 215. The insulating layer 12 1 is located on transistors SW11, transistor SW12, insulating layer 215, conductive layer 115a, and conductive layer 115b. The pixel electrode 111a is located on the insulating layer 121. The liquid crystal material-containing layer 112 is located on the pixel electrode 111a. The common electrode 113 is located on the liquid crystal material -containing layer 112. The substrate 132 is located on the common electrode 113.

[0053] The common electrode 113 has a region overlapping with the conductive layer 11 5a through the liquid crystal material-containing layer 112 and the pixel electrode 111a. The conductive layer 115a is electrically connected to the source or drain of transistor SW11. The pixel electrode 111a is electrically connected to the source or drain of transistor SW12. The conductive layer 115a, the conductive layer 115b, the pixel electrode 111a, and the common electrode 113 each have a function of transmitting visible light.

[0054] The pixel electrode 111a, the liquid crystal material-containing layer 112, and the common electrode 113 can function as a liquid crystal element 110. The pixel electrode 111a and the common electrode 113, with the liquid crystal material-containing layer They are laminated with each other via 112.

[0055] The conductive layer 115a, the insulating layer 121, and the pixel electrode 111a can function as one capacitive element Cw. Also, the conductive layer 115b, the insulating layer 121, and the pixel electrode 111a can function as one capacitive element Cs.

[0056] Preferably, the capacitance of the capacitive element Cw is larger than the capacitance of the capacitive element Cs. For example, the area of the region where the pixel electrode 111a and the conductive layer 115a overlap is preferably larger than the area of the region where the pixel electrode 111a and the conductive layer 115b overlap.

[0057] The configuration of the display device 10 can also be applied to a touch panel. The touch panel 11 shown in FIG. 1B is an example in which a touch sensor TC is mounted on the display device 10 shown in FIG. 1A. By providing the touch sensor TC at a position close to the display surface of the display device 10, the sensitivity of the touch sensor TC can be increased.

[0058] There is no limitation to the detection element (also referred to as a sensor element) included in the touch panel according to one aspect of the present invention. Various sensors that can detect the proximity or contact of a detected object such as a finger or a stylus can be applied as the detection element.

[0059] As the sensor method, for example, various methods such as a capacitance method, a resistive film method, a surface acoustic wave method, an infrared method, an optical method, and a pressure sensitive method can be used.

[0060] As the capacitance method, there are a surface capacitance method, a projected capacitance method, etc. Also, as the projected capacitance method, there are a self-capacitance method, a mutual capacitance method, etc. The mutual capacitance method can be used. This is preferable because it enables simultaneous multi-point detection.

[0061] The touch panel according to one aspect of the present invention has a configuration in which a separately manufactured display device and a detection element are bonded together. Various configurations can be applied, such as a configuration in which electrodes and the like constituting the detection element are provided on one or both of the substrate and the counter substrate that support the display element.

[0062] <Circuit configuration example of pixel> The display device 10 has a plurality of pixels 15 arranged in a matrix of m rows and n columns (m and n are integers of 1 or more). FIG. 2 shows a circuit diagram of the pixel 15(i, j) (i is an integer from 1 to m, and j is an integer from 1 to n).

[0063] The pixel 15(i, j) has a transistor SW11, a transistor SW12, a capacitor element Cw, a capacitor element Cs, and a liquid crystal element 110(i, j). In this specification and the like, the transistor SW11, the transistor SW12, the capacitor element Cw, and the capacitor element Cs are collectively referred to as the pixel circuit 120(i, j).

[0064] One of the source or drain of the transistor SW11 is electrically connected to one electrode of the capacitor element Cw. The other electrode of the capacitor element Cw is electrically connected to one of the source or drain of the transistor SW12, one electrode of the capacitor element Cs, and one electrode of the liquid crystal element 110.

[0065] Here, let the node where one of the source or drain of the transistor SW11 and one electrode of the capacitor element Cw are connected be the node NS. The other electrode of the capacitor element Cw, one of the source or drain of the transistor SW12, one electrode of the capacitor element Cs, and one of the electrodes of the liquid crystal element 11 Let the node to which one of the electrodes of 0 is connected be node NA.

[0066] The gate of transistor SW11 is electrically connected to wiring GL1(i). The transist The gate of transistor SW12 is electrically connected to wiring GL2(i). Transistor SW11 The other of the source or drain of is electrically connected to wiring SL1(j). Transist The other of the source or drain of transistor SW12 is electrically connected to wiring SL2(j).

[0067] The other electrode of capacitor element Cs is electrically connected to wiring CSCOM. The other electrode of liquid crystal element 110 is electrically connected to wiring VCOM. Arbitrary potentials can be supplied to wiring CSCOM and wiring VCOM respectively.

[0068] Wiring GL1(i) and wiring GL2(i) can each be called a scanning line and have the function of controlling the operation of the transistor. Wiring SL1(j) has the function as a signal line for supplying an image signal. Wiring SL2(j) has the function as a signal line for writing data to node NA.

[0069] Each transistor shown in FIG. 2 has a back gate electrically connected to the gate, but the connection of the back gate is not limited to this. Also, a back gate may not be provided for the transistor.

[0070] By making transistor SW11 non-conductive, the potential of node NS can be held. Also, by making transistor SW12 non-conductive, the potential of node NA can be held. Also, with transistor SW12 non-conductive, transistor SW11 is By supplying a predetermined potential to node NS through, the potential of node NA can be changed according to the change in the potential of node NS by capacitive coupling through capacitor element Cw. , the potential of node NA can be changed according to the change in the potential of node NS.

[0071] In pixel 15(i,j), the correction signal written from wiring SL2(j) to node NA is capacitively coupled with the image signal supplied from wiring SL1(j) and supplied to liquid crystal element 110. Therefore, the liquid crystal element 110 can display the corrected image.

[0072] By using a transistor with an extremely low off-current for transistor SW11, the potential of node NS can be held for a long time. Similarly, by using a transistor with an extremely low off-current for transistor SW12, the potential of node NA can be held for a long time. Examples of transistors with extremely low off-currents include transistors using metal oxides in the channel formation region (hereinafter referred to as OS transistors). Also, transistors having silicon in the channel formation region (hereinafter referred to as Si transistors) may be applied to the transistors of the pixel. Examples of Si transistors include transistors having amorphous silicon, transistors having crystalline silicon (typically, low-temperature polysilicon or single-crystalline silicon). Or both an OS transistor and an Si transistor may be used. As the Si transistor, a transistor having amorphous silicon, a transistor having crystalline silicon (typically, low-temperature polysilicon or single-crystalline silicon), etc. may be mentioned. For example, when rewriting the correction signal and the image signal every frame period, OS transistors may be used for transistors SW11 and SW12, or Si transistors may be used. When it is necessary to hold the potential of node NS or node NA for a long time

[0073] For example, when rewriting the correction signal and the image signal every frame period, transistors S W11 and transistor SW12 may use OS transistors or Si transistors When it is necessary to hold the potential of node NS or node NA for a long time ​For the combination, transistor SW11, and transistor SW12, it is preferable to use an OS transistor rather than a Si transistor. It is preferable to use a transistor.

[0074] <Configuration Example 1 of Display Module> Fig. 3A shows a top view of the display module 50, and Fig. 3B shows a cross-sectional view of the display module 50.

[0075] The display module 50 shown in Figs. 3A and 3B includes a display device, a flexible printed circuit board (FPC) connected to the display device, and a light unit 30 (omitted in Fig. 3A). It has.

[0076] The display device includes a display area 100, a gate driver GD_L, and a gate driver GD_R. It has.

[0077] The display area 100 has a plurality of pixels 15 and has a function of displaying an image.

[0078] As shown in Fig. 3A, the pixel 15(i,j) is electrically connected to wiring GL1(i), wiring GL2(i), wiring SL1(j), and wiring SL2(j).

[0079] As shown in Fig. 3B, the pixel 15(i,j) has a configuration in which the pixel circuit 120(i,j) shown in Fig. 2 and the liquid crystal element 110(i,j) are stacked. The pixel circuit 120(i,j) is electrically connected to the gate driver GD (corresponding to the gate driver GD_L and the gate driver GD_ R shown in Fig. 3A).

[0080] By controlling the scattering or transmission of light in the liquid crystal element 110(i,j), the display module 50 can display an image. Specifically, when the liquid crystal element 110(i,j) By scattering the light 32 emitted from the light unit 30 and emitting the scattered light 34 to the outside, The display module 50 can display an image.

[0081] The light unit 30 has at least a light source. As the light source, an LED (Light Emitting Diode), an organic EL (Electroluminescence ) element, etc. can be used. As the light source, for example, LEDs of three colors, red, green, and blue can be used.

[0082] The light unit 30 may have one or both of a structure having a light guiding function and a structure having a light diffusion function. For example, the light unit 30 may have at least one of a light guide plate (also referred to as a light guide), a brightness enhancement film, a light diffusion film, and a light diffusion plate . For example, the light emitted from the light source preferably enters the display device through the light guide plate and the light diffusion film.

[0083] Since the display module 50 uses an edge-lit type light as the light source, compared with the case of using a direct-lit backlight, the region transmitting visible light in the display device can be widened, and the transmittance of visible light in the display device can be increased. As a result, the scenery behind the display module 50 can be seen through the display module 50. For example, as shown in FIG. 3B, at least a part of the external light 35 incident on the pixel 15(i,j) passes through the display module 50 and is emitted to the outside of the display module 50.

[0084] Also, the display device according to one aspect of the present invention displays by a field sequential drive method The field sequential driving method is a method for Specifically, light-emitting elements of each color, such as red, green, and blue, are driven in a time-dependent manner. The lights are lit in sequence with a lag, and the pixels are driven in sync to produce color based on the additive color mixing method. The error is displayed.

[0085] When using the field sequential driving method, one pixel is divided into several sub-pixels of different colors. Since the display device does not need to be made of a single element, the aperture ratio of the pixel can be increased. In addition, since there is no need to provide a colored layer such as a color filter, There is no light absorption by the colored layer, and the transmittance of the pixel can be improved. The required brightness can be obtained with less power, so low power consumption can be achieved. The manufacturing process of the device can be simplified, and the manufacturing cost can be reduced.

[0086] When the field sequential driving method is applied, a high frame frequency is required. In the display device according to one embodiment of the present invention, one pixel has two capacitors. Since the capacitance is large and a high voltage can be supplied to the liquid crystal element, the response speed of the liquid crystal element is improved. For example, the voltage applied to the liquid crystal element can be temporarily increased to change the orientation of the liquid crystal. By overdriving the liquid crystal display, the response speed of the liquid crystal element can be improved. Therefore, the display device according to one embodiment of the present invention can be used in a frame display device that requires a high frame frequency. This can be said to be a suitable configuration when the field sequential driving method is applied.

[0087] The display device of one embodiment of the present invention may display in monochrome. However, since it is not necessary to configure a single pixel with sub-pixels of a plurality of different colors, the aperture ratio of the pixel can be increased. In addition, it is possible to increase the definition of the display device. Also, since there is no need to provide a coloring layer such as a color filter, there is no absorption of light by the coloring layer, and the transmittance of the pixel can be improved. As a result, the necessary luminance can be obtained with less power, so that low power consumption can be achieved. In addition, the manufacturing process of the display device can be simplified and the manufacturing cost can be reduced.

[0088] Also, in the display device according to one aspect of the present invention, one pixel may be configured with sub-pixels of a plurality of different colors. For example, one pixel unit is configured by sub-pixels that exhibit red, sub-pixels that exhibit green, and sub-pixels that exhibit blue, so that full-color display can be performed in the display area 100. Note that the colors exhibited by the sub-pixels are not limited to red, green, and blue. For the pixel unit, sub-pixels that exhibit colors such as white, yellow, magenta, or cyan may be used, for example.

[0089] The display device may incorporate one or more of a scanning line driving circuit (gate driver), a signal line driving circuit (source driver), and a driving circuit for a touch sensor. Also, one or more of these may be externally attached. The display module 50 shown in FIGS. 3A and 3B incorporates a gate driver, and has a configuration in which an integrated circuit (IC) having a source driver is externally attached.

[0090] The gate driver GD_L and the gate driver GD_R are provided at positions facing each other with the display area 100 interposed therebetween. The wiring GL1(i) is connected to the gate driver GD_L and the gate driver ​​​​​​​​​​​​Selection signals are simultaneously supplied from both of the gate drivers GD_R. Similarly, the wiring GL2(i) receives selection signals simultaneously from both the gate driver GD_L and the gate driver GD_R. By supplying selection signals simultaneously from both the gate driver GD_L and the gate driver GD_R to one wiring, the supply capacity of the selection signal to the wiring can be enhanced. Note that, depending on the purpose and the like, one of the gate driver GD_L and the gate driver GD_R may be omitted.

[0091] Signals and power are supplied to the gate driver GD_L and the gate driver GD_R from the outside via an FPC.

[0092] The source driver SD is electrically connected to the terminals of the display device using a method such as the COG (Chip on glass) method or the COF (Chip on Film) method. The wirings SL1(j) and SL2(j) receive signals such as image signals or correction signals from the source driver SD, respectively.

[0093] ≪Example of the upper surface layout of the pixel 1≫ Fig. 4 shows a top view of the pixel 15(i,j). Fig. 4 is a top view of the laminated structure from the pixel electrode 111a side up to the wiring GL1(i).

[0094] The pixel has a connection portion 71 and a connection portion 72. In the connection portion 71, the conductive layer 115a is electrically connected to the transistor SW11. Specifically, the conductive layer 115a and the conductive layer 222p are electrically connected. In the connection portion 72, the pixel electrode 111a is electrically connected to the transistor SW12. Specifically, the pixel electrode 111a and the conductive layer 222f are electrically connected. is connected.

[0095] The connection portions 71 and 72 preferably each have a region that transmits visible light. . For example, in transistors SW11 and SW12, a conductive layer (conductive layers 222p and 222f in FIG. 4) that functions as a source or a drain uses a conductive material that transmits visible light, so that the connection portions 71 and 72 can have a region that transmits visible light, and the aperture ratio of pixel 15(i,j) can be increased. As a result, the transmittance of visible light in display device 10 can be increased. Also, the region that transmits visible light of pixel 15(i, j) can be widened. As shown in FIG. 4, wiring SL1(j) that functions as a signal line is electrically connected to semiconductor layer 231b via conductive layer 222q. Note that wiring SL1

[0096] (j) and semiconductor layer 231b may be in contact without providing conductive layer 222q. Similarly, wiring SL2(j) that functions as a signal line is electrically connected to semiconductor layer 231a via conductive layer 222g. Also, wiring SL2(j) and semiconductor layer 231a may be in contact without providing conductive layer 222g.

[0097] A conductive material that transmits visible light may have a higher resistivity compared to a conductive material that blocks visible light, such as copper or aluminum. Bus lines such as scanning lines and signal lines are preferably formed using a conductive material (metal material) with a low resistivity, such as copper or aluminum, in order to prevent signal delay. As a result, it is possible to reduce the width of the bus line or make the bus line thinner.

[0098] Compared with a conductive material that blocks visible light, such as copper or aluminum, a conductive material that transmits visible light may have a large resistivity. Bus lines such as scanning lines and signal lines are preferably formed using a conductive material (metal material) with a low resistivity, such as copper or aluminum, to prevent signal delay. Thereby, it is possible to reduce the width of the bus line or make the bus line thinner. However, depending on the size of the pixel, the width of the bus line, the thickness of the bus line, etc. The line may be made of a conductive material that transmits visible light.

[0099] Specifically, the wiring SL1(j) and the wiring SL2(j) functioning as signal lines have a resistivity of It is preferable that the electrodes are formed using small conductive materials. Also, they function as gates and scan lines. The wiring GL1(i) and wiring GL2(i) that can be used are formed using a conductive material with low resistivity. The conductive material having a low resistivity is preferably a metal or an alloy. The gate 223a and the gate 223b functioning as a back gate are conductive layers that block visible light. It may be formed using a conductive material.

[0100] By using a conductive layer that blocks visible light for the gates 223a and 223b, the light from the light source and The external light is prevented from being irradiated onto the channel forming regions of the semiconductor layer 231a and the semiconductor layer 231b. In this way, when the channel formation region of the semiconductor layer is overlapped with a conductive layer that blocks visible light, This can suppress the fluctuation of transistor characteristics due to light, thereby improving the reliability of the transistor. It can be improved.

[0101] Furthermore, the gate 223a and the gate 223b may be made of a metal oxide. By using a metal oxide for the semiconductor layer 231a and the gate 223b, It is possible to suppress the extraction of oxygen from the channel forming region of 1b. This can improve the reliability of the transistor.

[0102] <Display module cross-sectional configuration example 1> 5A shows a cross-sectional view of the display module 50. Note that the pixel portion is shown in FIG. It corresponds to a cross-sectional view between lines G1 - G2 and G3 - G4.

[0103] The display module 50 shown in Fig. 5A has a configuration in which an FPC is connected to a display device.

[0104] Since the display module of one aspect of the present invention does not have a polarizing plate, the transmittance of visible light is high. . Also, in the cross-sectional views shown after Fig. 5A, the illustration of the light source is omitted. However, since the display module of one aspect of the present invention uses an edge-lit type light, the area for transmitting visible light in the display module can be made wider compared to the case of using a direct-lit backlight. Therefore, the display module of one aspect of the present invention has high transmittance of visible light, and through the display module, the scenery behind the display module can be seen.

[0105] The display module 50 shown in Fig. 5A includes a substrate 131, a substrate 132, transistors SW11, transistors SW12, an insulating layer 215, a conductive layer 115a, a conductive layer 115b, a conductive layer 115 c, an insulating layer 121, a pixel electrode 111a, a layer 112 containing a liquid crystal material, a common electrode 113, an alignment film 114a, an alignment film 114b, an adhesive layer 141, spacers KB, etc.

[0106] The display module 50 can display a color image using a field sequential drive method. Therefore, the display module 50 shown in Fig. 5A does not have a coloring layer such as a color filter. Furthermore, the display module 50 does not have a light-shielding layer such as a black matrix. Therefore, the transmittance of the pixel can be improved.

[0107] Transistors SW11 and SW12 are located on the substrate 131.

[0108] Transistor SW11 has a gate 221b, a gate insulating layer 211, a semiconductor layer 231b, a conductive layer 222p, a conductive layer 222q, an insulating layer 213, an insulating layer 214, and a gate 223b. One of the conductive layer 222p and the conductive layer 222q functions as a source, and the other functions as a drain. The insulating layer 213 and the insulating layer 214 function as gate insulating layers. Further, the conductive layer 222b may be a component of the transistor SW11. The conductive layer 222 b is connected to the conductive layer 222q.

[0109] Here, the gate 221b and the wiring GL1(i) are composed of the same conductive layer. It can be said that one conductive layer has a portion that functions as the gate 221b and a portion that functions as the wiring GL1(i). The conductive layer 222b corresponds to a part of the wiring SL1(j).

[0110] Transistor SW12 has a gate 221a, a gate insulating layer 211, a semiconductor layer 231a, a conductive layer 222f, a conductive layer 222g, an insulating layer 213, an insulating layer 214, and a gate 223a. One of the conductive layer 222f and the conductive layer 222g functions as a source, and the other functions as a drain. The insulating layer 213 and the insulating layer 214 function as gate insulating layers. Further, the conductive layer 222a may be a component of the transistor SW12. The conductive layer 222 a is connected to the conductive layer 222g.

[0111] Here, the gate 221a and the wiring GL2(i) are composed of the same conductive layer. It can be said that one conductive layer has a portion that functions as the gate 221a and a portion that functions as the wiring GL2(i). The conductive layer 222a corresponds to a part of the wiring SL2(j).

[0112] The conductive layers 222f, 222g, 222p, and 222q are formed of a material that transmits visible light. . Therefore, at least a part of the external light 35 shown in FIG. 5A passes through the connection portion between the conductive layer 222f and the conductive layer 11 5c (corresponding to the connection portion 72 in FIG. 4) and is emitted to the outside of the display module. Similarly, the connection portion between the conductive layer 222p and the conductive layer 115a (corresponding to the connection portion 71 in FIG. 4) can also transmit visible light. Thereby, the aperture ratio of the pixel can be increased, and the transmittance of visible light in the display module can be increased.

[0113] As shown in FIG. 5B, the source and drain of the transistor may be formed of a material that blocks visible light. The conductive layer 222e can be formed of the same material and in the same process as the conductive layer 222a.

[0114] As shown in FIG. 5B, the pixel electrode 111a may be directly connected to the source or drain of the transistor (here, the conductive layer 222e) without passing through the conductive layer 115c.

[0115] As shown in FIGS. 5C and 5D, the gate of the transistor may have a stacked structure. Also, the source, drain of the transistor, and further, wirings such as scanning lines and signal lines can each have a stacked structure. These electrodes of the transistor and the wirings electrically connected to the transistor preferably each have a low resistance value. For example, it is preferable to use a metal material with a low resistivity such as copper or aluminum for these electrodes and wirings.

[0116] Here, when copper is used, the adhesion may be low depending on the material of the base (such as a substrate or an insulating layer). ​​​​​​​​​Therefore, it is preferable to laminate a copper film on a film with high adhesion to the substrate. Also, in order to suppress the diffusion of copper into other layers it is preferable to laminate a film with high barrier properties and a copper film .

[0117] The gate 221m, conductive layer 222m, and gate 223m shown in FIG. 5C preferably each have at least one of titanium , molybdenum, manganese, and aluminum. Also, the gate 221n, conductive layer 222n, and gate 223n preferably each have one or both of copper and aluminum .

[0118] Note that the materials of the gates 221m, 221n, conductive layers 222m, 222n, gates 223m, 223 n are not limited to the above. For example, the gate 221n preferably has a lower resistance value than the gate 221m . For example, the conductive layer 222n preferably has a lower resistance value than the conductive layer 222m . For example, the gate 223n preferably has a lower resistance value than the gate 223m .

[0119] Also, the metal material may have a high reflectance. Therefore, it is preferable to perform an oxidation treatment or the like on the surface of the metal film to suppress the reflectance. Thereby, when viewed from the display surface side it is possible to suppress a decrease in visibility due to the reflection of external light .

[0120] The gate 221s, conductive layer 222s, and gate 223s shown in FIG. 5D preferably each have at least one of titanium , molybdenum, manganese, and aluminum. Also, the gate 221t, conductive layer 222t, and gate 223t each preferably contain copper . It is preferably provided. Further, the gate 221u, the conductive layer 222u, and the gate 223u preferably have copper oxide respectively. , respectively, preferably have copper oxide.

[0121] Note that the materials of the gates 221s, 221t, 221u, the conductive layers 222s, 222t, 222u, and the gates 223s, 223t, 223u are not limited to the above. For example, the gate 221t preferably has a lower resistance value than the gate 221s. The conductive layer 222t preferably has a lower resistance value than the conductive layer 2 222s. The gate 223t preferably has a lower resistance value than the gate 223s. The gate 221u preferably has a lower visible light reflectance than the gate 221t. The conductive layer 222u preferably has a lower visible light reflectance than the conductive layer 222t . The gate 223u preferably has a lower visible light reflectance than the gate 223t . The gate 221t and the gate 221u preferably contain at least one same metal element . The conductive layer 222t and the conductive layer 222u preferably contain at least one same metal element . The gate 223t and the gate 223u preferably contain at least one same metal element . Preferably, they contain at least one same metal element. Preferably, they contain at least one same metal element.

[0122] In FIG. 5A, an example in which the transistors SW11 and SW12 have back gates (gates 223a and 223b in FIG. 5A) is shown, but they may not have back gates.

[0123] As shown in FIG. 4, the two gates of the transistor are preferably electrically connected. A transistor configured such that the two gates are electrically connected can increase the field-effect mobility and increase the on-current as compared with other transistors . This enables the fabrication of a circuit capable of high-speed operation. Furthermore, it is possible to reduce the occupied area of the circuit section. By applying a transistor with a large on-current, even if the display device is enlarged or has a higher resolution, resulting in an increased number of wirings, it is possible to reduce the signal delay in each wiring and suppress display unevenness. Also, since the occupied area of the circuit section can be reduced, it is possible to narrow the bezel of the display device. Additionally, by applying such a configuration, a highly reliable transistor can be realized. In this embodiment, the case of using a metal oxide for the semiconductor layers 231a and 231b will be described as an example. The gate insulating layer 211 and the insulating layer 213 in contact with the semiconductor layers 231a and 231b are preferably oxide insulating layers. When the gate insulating layer 211 or the insulating layer 213 has a laminated structure, it is preferable that at least the layer in contact with the semiconductor layers 231a and 231b is an oxide insulating layer. This can suppress the occurrence of oxygen deficiency in the semiconductor layers 231a and 231b and enhance the reliability of the transistor.

[0124] The insulating layer 214 is preferably a nitride insulating layer. This can suppress the entry of impurities into the semiconductor layers 231a and 231b and enhance the reliability of the transistor. The insulating layer 215 preferably has a planarization function, and for example, is preferably an organic insulating layer. Note that the insulating layer 215 may not be formed, and a conductive layer 1

[0125] 15a or the like may be formed in contact with the insulating layer 214. The gate insulating layer 211 or the insulating layer 213 is preferably an oxide insulating layer. When the gate insulating layer 211 or the insulating layer 213 has a laminated structure, it is preferable that at least the layer in contact with the semiconductor layers 231a and 231b is an oxide insulating layer. This can suppress the occurrence of oxygen deficiency in the semiconductor layers 231a and 231b and enhance the reliability of the transistor. The insulating layer 214 is preferably a nitride insulating layer. This can suppress the entry of impurities into the semiconductor layers 231a and 231b and enhance the reliability of the transistor. The insulating layer 215 preferably has a planarization function, and for example, is preferably an organic insulating layer. Note that the insulating layer 215 may not be formed, and a conductive layer 1

[0126] 15a or the like may be formed in contact with the insulating layer 214. 15a or the like may be formed in contact with the insulating layer 214. This can suppress the entry of impurities into the semiconductor layers 231a and 231b and enhance the reliability of the transistor.

[0127] The insulating layer 215 preferably has a planarization function, and for example, is preferably an organic insulating layer. Note that the insulating layer 215 may not be formed, and a conductive layer 1 15a or the like may be formed in contact with the insulating layer 214. 15a or the like may be formed in contact with the insulating layer 214.

[0128] The conductive layer 115c is located on the insulating layer 215, and the insulating layer 121 is located on the conductive layer 115c. The pixel electrode 111a is located on the insulating layer 121. The pixel electrode 111a is electrically connected to the conductive layer 222f. Specifically, the conductive layer 222f is in contact with the conductive layer 115c, and the conductive layer 115c is in contact with the pixel electrode 111a.

[0129] The conductive layer 115a is located on the insulating layer 215. The conductive layer 115a is in contact with the conductive layer 222p and is electrically connected.

[0130] The conductive layer 115a and the pixel electrode 111a have an overlapping portion via the insulating layer 121. The conductive layer 115a, the insulating layer 121, and the pixel electrode 111a can function as one capacitive element Cw.

[0131] The conductive layer 115b is located on the insulating layer 215. The conductive layer 115b and the pixel electrode 111a have an overlapping portion via the insulating layer 121. The conductive layer 115b, the insulating layer 121, and the pixel electrode 111a can function as one capacitive element Cs.

[0132] Thus, the display module 50 has two capacitive elements in one pixel. Therefore, the holding capacitance of the pixel can be increased.

[0133] Also, both of the two capacitive elements are formed of a material that transmits visible light and have an overlapping region with each other. Thereby, the pixel can achieve both a high aperture ratio and a large holding capacitance.

[0134] Preferably, the capacitance of the capacitive element Cw is larger than the capacitance of the capacitive element Cs. Therefore, the pixel ​​The area of the region where the pixel electrode 111a and the conductive layer 115a overlap is preferably larger than the area of the region where the pixel electrode 111a and the conductive layer 1 15b overlap.

[0135] The pixel electrode 111a is provided on the insulating layer 121. On the pixel electrode 111a, an alignment film 114a is provided. The common electrode 113 is provided on the substrate 132, and a spacer KB is provided in contact with the common electrode 113. Then, an alignment film 114b is provided so as to cover the spacer KB and the common electrode 113. The layer 112 containing the liquid crystal material is provided between the alignment film 114a and the alignment film 114b.

[0136] Liquid crystal materials include positive liquid crystal materials with a positive dielectric anisotropy (Δε) and negative liquid crystal materials. In one aspect of the present invention, either material can be used, and an optimal liquid crystal material can be used according to the applied mode and design.

[0137] In order to lower the driving voltage of the liquid crystal element 110, it is preferable that the absolute value of the dielectric anisotropy (Δε) of the liquid crystal material is large. The positive type is more likely to increase the absolute value of the dielectric anisotropy (Δε) compared to the negative type. Therefore, when using a positive liquid crystal material, the range of selection of the liquid crystal material is widened which is preferable.

[0138] When the refractive index anisotropy of the liquid crystal material is large, the effect of scattering light is enhanced, and the layer 112 containing the liquid crystal material can be made thinner. Thereby, the driving voltage can be reduced.

[0139] In the display device according to one aspect of the present invention, when no voltage is applied between a pair of electrodes (the pixel electrode 111a and the common electrode 113) (off state), the layer 112 containing the liquid crystal material transmits visible light ​​​​ indicating a state where, when a voltage is applied between a pair of electrodes (ON state), the liquid crystal material applies a mode (reverse mode) in which the layer 112 containing the liquid crystal material scatters visible light. This is preferable. Thereby, the transmissivity of visible light of the display module 50 can be increased in a state where the display module 50 is not displaying an image. Therefore, the display module 50 can be used as a see-through display.

[0140] When applying such a mode, the layer 112 containing the liquid crystal material preferably has a liquid crystal material and a polymer material. It is preferable to have.

[0141] As the liquid crystal material, it is preferable to use a nematic liquid crystal.

[0142] The polymer material is preferably a copolymer of a polyfunctional monomer and a monofunctional monomer.

[0143] Examples of the monofunctional monomer include acrylate and methacrylate. Polyfunctional mono mers include diacrylate, triacrylate, dimethacrylate, trimethacrylate -ate and the like.

[0144] The polyfunctional monomer preferably has a phenyl benzoate skeleton. As the polyfunctional monomer For example, diacrylate having a phenyl benzoate skeleton can be mentioned.

[0145] Examples of the material that can be used as the polyfunctional monomer include structural formulas (1) to (3) represented materials.

[0146]

Chemical formula

[0147] The monofunctional monomer preferably has a cyclohexylbenzene skeleton. Examples of the monofunctional monomer include acrylates having a cyclohexylbenzene skeleton.

[0148] Examples of the material that can be used as the monofunctional monomer include the materials represented by structural formulas (4) to (6).

[0149]

Chemical formula

[0150] For example, the layer 112 containing the liquid crystal material can be formed by irradiating light on a material layer containing the liquid crystal material, the monomer, and the photopolymerization initiator to cure it.

[0151] Note that the liquid crystal element used in the display device according to one aspect of the present invention is not limited to the reverse mode, and various modes can be applied.

[0152] Since the display device of the present embodiment is a transmissive liquid crystal display device, a conductive material that transmits visible light is used for both of the pair of electrodes (pixel electrode 1 11a and common electrode 113). Also, the conductive layers 115a, 115b, and 115c are formed using a conductive material that transmits visible light, so that it is possible to suppress a decrease in the aperture ratio of the pixel even when the capacitance element Cw and the capacitance element Cs are provided. Note that a silicon nitride film is suitable for the insulating layer 121 that functions as a dielectric of the capacitance element.

[0153] As the conductive material that transmits visible light, for example, a material containing one or more selected from indium (In), zinc (Zn), and tin (Sn) may be used. Specifically, indium oxide ​​​​Including um, indium tin oxide (ITO), indium zinc oxide, tungsten oxide Indium oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium, indium tin oxide containing titanium, indium tin oxide containing silicon (ITSO), zinc oxide, zinc oxide containing gallium, etc. can be mentioned. Note that a film containing graphene can also be used. The film containing graphene can be formed, for example, by reducing a film containing graphene oxide.

[0154] In addition, the conductive film that transmits visible light can be formed using an oxide semiconductor (hereinafter also referred to as an oxide conductive layer). The oxide conductive layer preferably contains indium, for example, and more preferably contains In-M-Zn oxide (M is Al, Ti, Ga, Y, Zr, La, Ce, Nd, Sn or Hf).

[0155] The oxide semiconductor is a semiconductor material whose resistance can be controlled by at least one of oxygen deficiency in the film and the concentration of impurities such as hydrogen and water in the film. Therefore, by selecting a process in which at least one of oxygen deficiency and impurity concentration increases in the oxide semiconductor layer, or a process in which at least one of oxygen deficiency and impurity concentration decreases, the resistivity of the oxide conductive layer can be controlled.

[0156] Note that, as described above, the oxide conductive layer formed using an oxide semiconductor can also be referred to as an oxide semiconductor layer with a high carrier density and low resistance, an oxide semiconductor layer having conductivity, or an oxide semiconductor layer with high conductivity.

[0157] The substrate 131 and the substrate 132 are bonded together by the adhesive layer 141.​​​​​

[0158] The FPC is electrically connected to the conductive layer 221c. Specifically, the FPC contacts the connector 13 9, the connector 139 contacts the conductive layer 222c, and the conductive layer 222c contacts the conductive layer 221c . The conductive layer 221c is formed on the substrate 131, and the conductive layer 222c is formed on the gate insulating layer 21 1. The conductive layer 221c can be formed in the same process and with the same material as the gates 221a and 221b . The conductive layer 222c can be formed in the same process and with the same material as the conductive layers 222a and 222b .

[0159] ≪Touch Panel≫ In one aspect of the present invention, a display device or a display module (hereinafter also referred to as a touch panel) equipped with a touch sensor can be manufactured .

[0160] Fig. 6 shows a cross-sectional view of the display module 51. The display module 51 has a configuration in which a touch sensor is added to the configuration of the display module 5 0

[0161] The substrate 180 and the substrate 132 are bonded together by an adhesive layer 186. On the substrate 132 side of the substrate 180, electrodes 181 and 182 are provided . The electrodes 181 and 18 2 are electrically insulated from each other by an insulating layer 185. A connection portion is provided in a region near the end of the substrate 180 . In the connection portion, a wiring 187 is electrically connected to the FPC2 via a conductive layer 188 and a connector 189

[0162] When the electrodes and wirings of the touch sensor are provided at positions overlapping the openings (portions used for display) of the pixels, materials that transmit visible light are used for the electrodes and wirings. Also ​When provided at a position that does not overlap with the pixel opening, a material that blocks visible light can be used for the electrode and wiring. Therefore, materials with low resistivity such as metals can be used for electrodes 181 and 182. For example, it is preferable to use a metal mesh for the wiring and electrodes of the touch sensor. This can reduce the resistance of the wiring and electrodes of the touch sensor. Also, it is suitable as a touch sensor for a large display device. Note that generally, metal is a material with a high reflectivity, but it can be made dark by performing oxidation treatment or the like. Therefore, even when viewed from the display surface side, it is possible to suppress a decrease in visibility due to external light reflection.

[0163] Alternatively, the wiring and the electrode may be formed of a laminate of a metal layer and a layer with a low reflectivity (hereinafter referred to as a dark layer). Examples of the dark layer include a layer containing copper oxide, a layer containing copper chloride or tellurium chloride, etc. Also, the dark layer may be formed using metal fine particles such as Ag particles, Ag fibers, Cu particles, nanocarbon particles such as carbon nanotubes (CNT), graphene, and highly conductive polymers such as polyethylenedioxythiophene (PEDOT), polyaniline, polypyrrole, etc.

[0164] ≪Materials of Components≫ Next, details of materials and the like that can be used for each component of the display device and the display module of the present embodiment will be described.

[0165] There are no major restrictions on the material of the substrate included in the display device, and various substrates can be used. For example, a glass substrate, a quartz substrate, a sapphire substrate, a semiconductor substrate, a ceramic substrate, a metal ​​​​A substrate, such as a plastic substrate, can be used.

[0166] By using a thin substrate, the weight and thickness of the display device can be reduced. Further more, by using a substrate with a thickness that provides flexibility, a flexible display device can be realized.

[0167] The transistor included in the display device of this embodiment may have either a top-gate type or a bottom-gate type structure. Alternatively, gate electrodes may be provided above and below the channel.

[0168] The semiconductor material used for the transistor is not particularly limited, and examples include metal oxides having semiconductor characteristics (also referred to as oxide semiconductors), silicon, germanium, etc. As for silicon, amorphous silicon, crystalline silicon (such as low-temperature polysilicon and single-crystalline silicon), etc. can be mentioned.

[0169] The crystallinity of the semiconductor material used for the transistor is also not particularly limited, and any of amorphous semiconductors, semiconductors having crystallinity (such as microcrystalline semiconductors, polycrystalline semiconductors, single-crystalline semiconductors, or semiconductors having a crystalline region in part) can be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed.

[0170] The semiconductor layer is, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), zinc, and ​​​​​​​​​Preferably, it has. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and scandium. Preferably, it is one or more selected from the group consisting of

[0171] In particular, as the semiconductor layer, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO). Preferably, it is used.

[0172] When the semiconductor layer is an In-M-Zn oxide, the sputtering target used to form the In-M-Zn oxide preferably has an atomic ratio of In equal to or greater than the atomic ratio of M. Preferably, it is. As the atomic ratio of the metal elements of such a sputtering target, In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 2:1:3, In:M :Zn = 3:1:2, In:M:Zn = 4:2:3, In:M:Zn = 4:2:4.1, In:M:Zn = 5:1:6, In:M:Zn = 5:1:7, In:M:Zn = 5:1: 8, In:M:Zn = 6:1:6, In:M:Zn = 5:2:5, etc. can be mentioned.

[0173] As the sputtering target, it is preferable to use a target containing a polycrystalline oxide because it is easy to form a semiconductor layer having crystallinity. Note that the atomic ratio of the semiconductor layer to be formed includes a plus or minus 40% variation of the atomic ratio of the metal elements contained in the above sputtering target. For example, when the composition of the sputtering target used for the semiconductor layer is In:Ga:Zn = 4:2:4.1 [atomic ratio], the composition of the semiconductor layer to be formed may be in the vicinity of In:Ga:Zn = 4:2:3 [atomic ratio]. Preferably, it is. Preferably, it is. Preferably, it is. For example, when the composition of the sputtering target used for the semiconductor layer is I n:Ga:Zn = 4:2:4.1 [atomic ratio], the composition of the semiconductor layer to be formed may be in the vicinity of I n:Ga:Zn = 4:2:3 [atomic ratio].

[0174] When the atomic ratio is described as In:Ga:Zn = 4:2:3 or in the vicinity thereof, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. When the atomic ratio is described as In:Ga:Zn = 5:1:6 or in the vicinity thereof, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. When the atomic ratio is described as In:Ga:Zn = 1:1:1 or in the vicinity thereof, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0175] The transistors included in the gate drivers GD_L and GD_R and the transistors included in the display region 100 may have the same structure or different structures. All the transistors included in the gate driver may have the same structure, or two or more types of structures may be combined and used. Similarly, all the transistors included in the display region 100 may have the same structure, or two or more types of structures may be combined and used.

[0176] Examples of the insulating material that can be used for the insulating layer included in the display device include organic insulating materials and inorganic insulating materials. Examples of the organic insulating materials include acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, and phenolic resin. Examples of the inorganic insulating layer include silicon oxide film, silicon oxynitride film, silicon nitride oxide film, silicon nitride film, , hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, oxidation tantalum film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film and the like.

[0177] In addition to the gate, source, and drain of the transistor, various wirings and electrodes of the display device The conductive layer of can be formed of a single-layer structure or a laminated structure using one or more of metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium ium, molybdenum, silver, tantalum, and tungsten, and alloys having at least one of these metals as a main component. For example, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a tungsten film, a two-layer structure in which a copper film is laminated on a molybdenum film, a two-layer structure in which a copper film is laminated on an alloy film containing molybdenum and tungsten, a two-layer structure in which a copper film is laminated on a copper-magnesium ium-aluminum alloy film, a three-layer structure in which a titanium film or a titanium nitride film is formed, and an aluminum film or a copper film is laminated on the titanium film or the titanium nitride film, and further a titanium film or a titanium nitride film is formed thereon, a three-layer structure in which a molybdenum film or a molybdenum nitride film is formed, and an aluminum film or a copper film is laminated on the molybdenum film or the molybdenum nitride film, and a molybdenum film or a molybdenum nitride film is further formed thereon. For example, when the conductive layer has a three-layer structure, the first and third layers are formed of a film made of titanium, titanium nitride, molybdenum, tungsten, an alloy containing molybdenum and tungsten, an alloy containing molybdenum and zirconium, or molybdenum nitride, and the second layer is formed of a film made of a low-resistance material such as copper, aluminum, gold, or silver, or an alloy of copper and manganese. On the titanium film or the titanium nitride film, an aluminum film or a copper film is laminated, and further a titanium film or a titanium nitride film is formed thereon. For example, when the conductive layer has a three-layer structure, the first and third layers are formed of a film made of titanium, titanium nitride, molybdenum, tungsten, an alloy containing molybdenum and tungsten, an alloy containing molybdenum and zirconium, or molybdenum nitride, and the second layer is formed of a film made of a low-resistance material such as copper, aluminum, gold, or silver, or an alloy of copper and manganese. On the molybdenum film or the molybdenum nitride film, an aluminum film or a copper film is laminated, and a molybdenum film or a molybdenum nitride film is further formed thereon. For example, when the conductive layer has a three-layer structure, the first and third layers are formed of a film made of titanium, titanium nitride, molybdenum, tungsten, an alloy containing molybdenum and tungsten, an alloy containing molybdenum and zirconium, or molybdenum nitride, and the second layer is formed of a film made of a low-resistance material such as copper, aluminum, gold, or silver, or an alloy of copper and manganese. an alloy containing molybdenum and zirconium, or a film made of molybdenum nitride, and the second layer is formed of a film made of a low-resistance material such as copper, aluminum, gold, or silver, or an alloy of copper and manganese. It is preferable to do so. Note that indium tin oxide (ITO), indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, ITSO, or other conductive materials with translucency may be used. Note that an oxide conductive layer may be formed by controlling the resistivity of the oxide semiconductor. Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, ITSO, or other conductive materials with translucency may be used. Note that an oxide conductive layer may be formed by controlling the resistivity of the oxide semiconductor. Indium tin oxide containing titanium oxide, indium zinc oxide, ITSO, or other conductive materials with translucency may be used. Note that an oxide conductive layer may be formed by controlling the resistivity of the oxide semiconductor. Indium tin oxide containing titanium oxide, indium zinc oxide, ITSO, or other conductive materials with translucency may be used. Note that an oxide conductive layer may be formed by controlling the resistivity of the oxide semiconductor. Indium tin oxide containing titanium oxide, indium zinc oxide, ITSO, or other conductive materials with translucency may be used. Note that an oxide conductive layer may be formed by controlling the resistivity of the oxide semiconductor.

[0178] As the adhesive layer 141, a curable resin such as a thermosetting resin, a photocurable resin, or a two-component mixed curable resin can be used. For example, an acrylic resin, a urethane resin, an epoxy resin, or a siloxane resin can be used. As the adhesive layer 141, a curable resin such as a thermosetting resin, a photocurable resin, or a two-component mixed curable resin can be used. For example, an acrylic resin, a urethane resin, an epoxy resin, or a siloxane resin can be used. As the adhesive layer 141, a curable resin such as a thermosetting resin, a photocurable resin, or a two-component mixed curable resin can be used. For example, an acrylic resin, a urethane resin, an epoxy resin, or a siloxane resin can be used.

[0179] As the connector 139, for example, an anisotropic conductive film (ACF: Anisotropic Conductive Film) or an anisotropic conductive paste (ACP: Anisotropic Conductive Paste) can be used. As the connector 139, for example, an anisotropic conductive film (ACF: Anisotropic Conductive Film) or an anisotropic conductive paste (ACP: Anisotropic Conductive Paste) can be used. As the connector 139, for example, an anisotropic conductive film (ACF: Anisotropic Conductive Film) or an anisotropic conductive paste (ACP: Anisotropic Conductive Paste) can be used.

[0180] The thin films (insulating film, semiconductor film, conductive film, etc.) constituting the display device can be formed by sputtering method, chemical vapor deposition (CVD: Chemical Vapor Deposition) method, vacuum evaporation method, pulsed laser deposition (PLD: Pulsed Laser Deposition) method, atomic layer deposition (ALD: Atomic Layer Deposition) method, etc. Examples of the CVD method include plasma enhanced chemical vapor deposition (PECVD: Plasma Enhanced Chemical Vapor Deposition) method and thermal CVD method. Examples of the thermal CVD method include metalorganic chemical vapor deposition. The thin films (insulating film, semiconductor film, conductive film, etc.) constituting the display device can be formed by sputtering method, chemical vapor deposition (CVD: Chemical Vapor Deposition) method, vacuum evaporation method, pulsed laser deposition (PLD: Pulsed Laser Deposition) method, atomic layer deposition (ALD: Atomic Layer Deposition) method, etc. Examples of the CVD method include plasma enhanced chemical vapor deposition (PECVD: Plasma Enhanced Chemical Vapor Deposition) method and thermal CVD method. The thin films (insulating film, semiconductor film, conductive film, etc.) constituting the display device can be formed by sputtering method, chemical vapor deposition (CVD: Chemical Vapor Deposition) method, vacuum evaporation method, pulsed laser deposition (PLD: Pulsed Laser Deposition) method, atomic layer deposition (ALD: Atomic Layer Deposition) method, etc. Examples of the CVD method include plasma enhanced chemical vapor deposition (PECVD: Plasma Enhanced Chemical Vapor Deposition) method and thermal CVD method. The thin films (insulating film, semiconductor film, conductive film, etc.) constituting the display device can be formed by sputtering method, chemical vapor deposition (CVD: Chemical Vapor Deposition) method, vacuum evaporation method, pulsed laser deposition (PLD: Pulsed Laser Deposition) method, atomic layer deposition (ALD: Atomic Layer Deposition) method, etc. Examples of the CVD method include plasma enhanced chemical vapor deposition (PECVD: Plasma Enhanced Chemical Vapor Deposition) method and thermal CVD method. The thin films (insulating film, semiconductor film, conductive film, etc.) constituting the display device can be formed by sputtering method, chemical vapor deposition (CVD: Chemical Vapor Deposition) method, vacuum evaporation method, pulsed laser deposition (PLD: Pulsed Laser Deposition) method, atomic layer deposition (ALD: Atomic Layer Deposition) method, etc. Examples of the CVD method include plasma enhanced chemical vapor deposition (PECVD: Plasma Enhanced Chemical Vapor Deposition) method and thermal CVD method. The thin films (insulating film, semiconductor film, conductive film, etc.) constituting the display device can be formed by sputtering method, chemical vapor deposition (CVD: Chemical Vapor Deposition) method, vacuum evaporation method, pulsed laser deposition (PLD: Pulsed Laser Deposition) method, atomic layer deposition (ALD: Atomic Layer Deposition) method, etc. Examples of the CVD method include plasma enhanced chemical vapor deposition (PECVD: Plasma Enhanced Chemical Vapor Deposition) method and thermal CVD method. The thin films (insulating film, semiconductor film, conductive film, etc.) constituting the display device can be formed by sputtering method, chemical vapor deposition (CVD: Chemical Vapor Deposition) method, vacuum evaporation method, pulsed laser deposition (PLD: Pulsed Laser Deposition) method, atomic layer deposition (ALD: Atomic Layer Deposition) method, etc. Examples of the CVD method include plasma enhanced chemical vapor deposition (PECVD: Plasma Enhanced Chemical Vapor Deposition) method and thermal CVD method. The vapor deposition method (MOCVD: Metal Organic CVD) can be mentioned.

[0181] The thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, knife coating, and other methods.

[0182] The thin films constituting the display device can be processed using a photolithography method or the like. Also, island-shaped thin films may be formed by a film formation method using a masking mask. Or, the thin films may be processed by nanoimprint method, sandblasting method, or lift-off method. As the photolithography method, a resist mask is formed on the thin film to be processed, and the thin film is processed by etching or the like, and then the resist mask is removed. Another method is to form a photosensitive thin film, and after exposure and development, the thin film is processed into a desired shape. There are these methods.

[0183] In the photolithography method, as the light used for exposure, for example, i-line (wavelength 365 nm ), g-line (wavelength 436 nm), h-line (wavelength 405 nm), and light obtained by mixing these are mentioned. In addition, ultraviolet light, KrF laser light, or ArF laser light can also be used. Furthermore, exposure may be performed by immersion exposure technology. As the light used for exposure, extreme ultraviolet light (EUV: Extreme Ultra-violet) and X-rays are mentioned. In addition to the light used for exposure, an electron beam can also be used. Extreme ultraviolet light, X-rays ​​Alternatively, using an electron beam is preferable because extremely fine processing becomes possible. Note that when performing exposure by scanning a beam such as an electron beam, a photomask is unnecessary. When performing exposure by scanning a beam such as an electron beam, a photomask is unnecessary.

[0184] For etching the thin film, a dry etching method, a wet etching method, a sandblasting method, etc. can be used.

[0185] ≪Metal Oxide≫ Hereinafter, metal oxides applicable to the semiconductor layer will be described.

[0186] In this specification etc., metal oxides having nitrogen may also be collectively referred to as metal oxides. Further, metal oxides having nitrogen may be referred to as metal oxynitrides. For example, any metal oxide having nitrogen such as zinc oxynitride (ZnON) may be used for the semiconductor layer. In this specification etc., metal oxides having nitrogen may also be collectively referred to as metal oxides. Further, metal oxides having nitrogen may be referred to as metal oxynitrides. For example, any metal oxide having nitrogen such as zinc oxynitride (ZnON) may be used for the semiconductor layer.

[0187] In this specification etc., CAAC (c-axis aligned crystal) and CAC (Cloud-Aligned Composite) may be described. Note that CAAC represents an example of a crystal structure, and CAC represents an example of a function or a material configuration. In this specification etc., CAAC (c-axis aligned crystal) and CAC (Cloud-Aligned Composite) may be described. Note that CAAC represents an example of a crystal structure, and CAC represents an example of a function or a material configuration.

[0188] For example, CAC (Cloud-Aligned Composite)-OS can be used for the semiconductor layer.

[0189] CAC-OS or CAC-metal oxide has a conductive function in part of the material and an insulating function in part of the material, and has a function as a semiconductor in the whole material. ​​​​​​​​. When using CAC-OS or CAC-metal oxide in the active layer of a transistor, the conductive function is the function of allowing electrons (or holes) serving as carriers to flow, and the insulating function is the function of not allowing electrons serving as carriers to flow. By causing the conductive function and the insulating function to act complementarily, respectively, a switching function (On / Off function) can be imparted to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating the respective functions, both functions can be enhanced to the maximum extent.

[0190] Also, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. Also, in the material, the conductive region and the insulating region may be separated at the nanoparticle level. Also, the conductive region and the insulating region may be unevenly distributed in the material, respectively. Also, the conductive region may be observed with a blurred periphery and connected in a cloud shape.

[0191] Also, in CAC-OS or CAC-metal oxide, the conductive region and the insu lating region may be dispersed in the material with sizes of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less, respectively.

[0192] Also, CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, CAC-OS or CAC-metal oxi de ​​de is composed of a component having a wide gap due to an insulating region and a component having a narrow gap due to a conductive region. In this configuration, when carriers flow, carriers mainly flow in the component having a narrow gap. Also, the component having a narrow gap acts complementarily to the component having a wide gap, and carriers also flow in the component having a wide gap in conjunction with the component having a narrow gap. Therefore, when using the above C AC-OS or CAC-metal oxide in the channel formation region of a transistor, a high current driving force, that is, a large on-current, and a high field-effect mobility can be obtained in the on-state of the transistor. That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite (matrix composite), or a metal matrix composite (metal matrix composite). Oxide semiconductors (metal oxides) can be divided into single-crystalline oxide semiconductors and other non-single-crystalline oxide semiconductors. Examples of non-single-crystalline oxide semiconductors include CAAC-OS (c-a xis aligned crystalline oxide semiconduc tor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxi

[0193] de semiconductor), pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), and amorphous oxide semiconductors and the like.

[0194]

[0195] ​​​​​​CAAC-OS has a c-axis orientation and a plurality of nanocrystals are connected in the a-b plane direction to form a crystal structure with strain. Note that the strain refers to the area where a plurality of nanocrystals are connected and indicates the location where the lattice arrangement changes between a region with an aligned lattice arrangement and another region with an aligned lattice arrangement .

[0196] The nanocrystals are based on hexagons, but are not necessarily regular hexagons and may be non-regular hexagons . Also, in the strain, there may be lattice arrangements such as pentagons and heptagons. Note that in CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary) even near the strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice arrangement. This is because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the bond distance between atoms changes due to the substitution of metal elements .

[0197] In addition, CAAC-OS tends to have a layered crystal structure (also called a layered structure) in which a layer containing indium and oxygen (hereinafter referred to as the In layer) and a layer containing element M , zinc, and oxygen (hereinafter referred to as the (M,Zn) layer) are laminated. Note that indium and element M are mutually substitutable , and when element M in the (M,Zn) layer is substituted with indium, it can also be represented as an (In,M,Zn) layer . Also, when indium in the In layer is substituted with element M, it can also be represented as an (In,M) layer .

[0198] CAAC-OS is a highly crystalline metal oxide. On the other hand, CAAC-OS has a clear crystal ​​​Since it is difficult to confirm grain boundaries, the decrease in electron mobility caused by grain boundaries is unlikely to occur. In addition, the crystallinity of metal oxides decreases due to the inclusion of impurities and the generation of defects. Therefore, CAAC-OS is not suitable for impurities or defects (oxygen vacancies (V O :oxygen va It can also be said to be a metal oxide with low levels of . Metal oxides with OS have stable physical properties. Therefore, Metal oxides are heat resistant and highly reliable.

[0199] The nc-OS is a nano-sized area (e.g., an area of ​​1 nm to 10 nm, especially 1 nm to 3 nm). The nc-OS has periodic atomic arrangement in the nanometer range. There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analysis method, nc-OS may be considered to be a-like OS or amorphous oxide semiconductor. It may be indistinguishable from the above.

[0200] Indium gallium oxide, a type of metal oxide containing indium, gallium, and zinc, is In the case of IGZO, the nanocrystals mentioned above provide a stable structure. In particular, IGZO tends to have difficulty growing crystals in the air, Small crystals (e.g., crystals of a few mm or cm) are more difficult to measure than large crystals (here, crystals of a few mm or cm). , the nanocrystals mentioned above) may be structurally more stable.

[0201] The a-like OS is a metal oxide semiconductor with a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has voids or low density areas. The e-OS has a lower crystallinity than the nc-OS and CAAC-OS.

[0202] Oxide semiconductors (metal oxides) have a variety of structures, each with different properties. The oxide semiconductor of one embodiment of the present invention is an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-lik e OS, nc-OS, and CAAC-OS may be present in two or more types.

[0203] The metal oxide film functioning as the semiconductor layer is heated with either an inert gas or an oxygen gas, or The metal oxide film can be formed by using both of the oxygen and the nitrogen. However, in order to obtain a transistor having a high field effect mobility, In this case, the flow rate ratio of oxygen (oxygen partial pressure) during the deposition of the metal oxide film is 0% or more and 3% or less. 0% or less is preferable, 5% or more and 30% or less is more preferable, and 7% or more and 15% or less is even more preferable. preferable.

[0204] The metal oxide preferably has an energy gap of 2 eV or more, and more preferably 2.5 eV or more. More preferably, the energy is 3 eV or more, and even more preferably, 3 eV or more. By using metal oxides with a wide energy gap, the off-state current of transistors can be reduced. This can be done.

[0205] The metal oxide film can be formed by a sputtering method. A PECVD method, a thermal CVD method, an ALD method, a vacuum deposition method, or the like may also be used.

[0206] <Display module configuration example 2> FIG. 7 shows a top view of the pixel 16(i,j). 11a is a top view of the laminated structure as viewed from the pixel electrode 111a side.

[0207] Fig. 8 shows a cross-sectional view of the display module 52. Note that the pixel portion corresponds to the dashed-dotted line shown in Fig. 7 and is equivalent to the cross-sectional views between G1 - G2 and G3 - G4.

[0208] The configurations shown in Figs. 7 and 8 are different from the configurations shown in Figs. 4 and 5A in terms of the transistor structure. In the following, descriptions of parts common to the previously described configuration examples may be omitted.

[0209] The transistor SW11 shown in Figs. 7 and 8 includes a gate 221b, a gate insulating layer 211, a semiconductor layer 231b, a conductive layer 222p, a conductive layer 222q, a gate insulating layer 225, and a gate 223b. One of the conductive layers 222p and 222q functions as a source, and the other functions as a drain.

[0210] The transistor SW12 shown in Figs. 7 and 8 includes a gate 221a, a gate insulating layer 211, a semiconductor layer 231a, a conductive layer 222f, a conductive layer 222g, a gate insulating layer 225, and a gate 223a. One of the conductive layers 222f and 222g functions as a source, and the other functions as a drain.

[0211] The semiconductor layers 231a and 231b each have a pair of low-resistance regions 231n and a channel formation region 231i sandwiched between the pair of low-resistance regions 231n.

[0212] The channel formation region 231i overlaps with the gate 221a or the gate 221b via the gate insulating layer 211 and overlaps with the gate 223a or the gate 223b via the gate insulating layer 225.

[0213] The conductive layers 222f, 222g, 222p, and 222q are formed of a material that transmits visible light. . Therefore, at least a part of the external light 35 shown in FIG. 8 passes through the connection part between the conductive layer 222f and the conductive layer 115 c (corresponding to the connection part 72 in FIG. 7) and is emitted to the outside of the display module. . Similarly, the connection part between the conductive layer 222p and the conductive layer 115a (corresponding to the connection part 71 in FIG. 7) can also transmit visible light. . Thereby, the aperture ratio of the pixel can be increased, and the transmittance of visible light in the display module can be increased.

[0214] As described above, in this embodiment, the case where a metal oxide is used for the semiconductor layer 231a and the semiconductor layer 231b will be described as an example.

[0215] The gate insulating layer 211 and the gate insulating layer 225 in contact with the channel formation region 231i are preferably oxide insulating layers. In addition, when the gate insulating layer 211 or the gate insulating layer 225 has a stacked structure, at least the layer in contact with the channel formation region 231i is preferably an oxide insulating layer. This can suppress the occurrence of oxygen deficiency in the channel formation region 231i and improve the reliability of the transistor.

[0216] The insulating layer 214 is preferably a nitride insulating layer. This can suppress the entry of impurities into the semiconductor layers 231a and 231b and improve the reliability of the transistor.

[0217] The insulating layer 215 preferably has a planarization function, and for example, is preferably an organic insulating layer.

[0218] As shown in FIG. 8, the gate insulating layer 225 is located between the low-resistance region 231n and the channel formation region 23 It may overlap with both of them. The gate insulating layer 225 shown in FIG. 8 is the gate 223a , 223b can be used as a mask to reduce the process of processing the gate insulating layer 225, and the insulating layer 2 14 has merits such as being able to reduce the step of the formed surface. As shown in FIG. 9, the gate insulating layer 225 is formed only on the channel formation region 231i and may not overlap with the low resistance region 231n .

[0219] The low resistance region 231n has a lower resistivity than the channel formation region 231i. Using the gates 223a , 223b as masks, the low resistance region 231n may be formed by adding impurities . Examples of the impurities include hydrogen, helium, neon, argon, fluorine, nitrogen , phosphorus, arsenic, antimony, boron, aluminum, magnesium, silicon, etc. The impurities can be added using the ion implantation method or the ion doping method . Also, in addition to the above impurities, indium, which is one of the constituent elements of the semiconductor layers 231a, 231b, etc. can be added to form the low resistance region 231n. By adding indium , the concentration of indium in the low resistance region 231n may be higher than that in the channel formation region 231i . .

[0220] When the gate insulating layer 225 is an oxide film having a function of releasing oxygen by heating, heating may supply oxygen to the low resistance region 231n, resulting in a reduction in carrier density and an increase in electrical resistance . Therefore, it is preferable to form the low resistance region 231n by adding impurities to a part of the semiconductor layer through the gate insulating layer 225. Thereby, the gate insulating layer 22 ​​Impurities are also added to 5. By adding impurities to the oxide film having a function of releasing oxygen upon heating, the amount of oxygen released can be reduced. Therefore, it is possible to suppress the supply of oxygen from the gate insulating layer 225 to the low-resistance region 231n by heating, and maintain the state where the electrical resistance of the low-resistance region 231n is low. After forming the gate insulating layer 225 and the gates 223a and 223b, a first layer is formed so as to be in contact with a part of the semiconductor layers 231a and 231b, and by performing a heat treatment, the resistance of the region can be reduced to form the low-resistance region 231n. As the first layer, a film containing at least one of metal elements such as aluminum, titanium, tantalum, tungsten, chromium, and ruthenium can be used. In particular, it preferably contains at least one of aluminum, titanium, tantalum, and tungsten. Alternatively, a nitride containing at least one of these metal elements, or an oxide containing at least one of these metal elements can be preferably used. In particular, metal films such as tungsten films and titanium films, nitride films such as aluminum titanium nitride films, titanium nitride films, and aluminum nitride films, and oxide films such as aluminum titanium oxide films can be preferably used. The thickness of the first layer can be, for example, 0.5 nm or more and 20 nm or less, preferably 0.5 nm or more and 15 nm or less, more preferably 0.5 nm or more and 10 nm or less, and even more preferably 1 nm or more and 6 nm or less. Typically, it can be about 5 nm or about 2 nm. Even when the first layer is this thin, it can sufficiently reduce the resistance of the semiconductor layers 231a and 231

[0221] Also, after forming the gate insulating layer 225 and the gates 223a, 223b, a first layer is formed so as to contact a part of the semiconductor layers 231a, 231b, and by performing a heat treatment, the resistance of the region can be reduced to form the low-resistance region 231n. As the first layer, a film containing at least one of metal elements such as aluminum, titanium, tantalum, tungsten, chromium, and ruthenium can be used. In particular, it preferably contains at least one of aluminum, titanium, tantalum, and tungsten. Alternatively, a nitride containing at least one of these metal elements, or an oxide containing at least one of these metal elements can be preferably used. In particular, metal films such as tungsten films and titanium films, nitride films such as aluminum titanium nitride films, titanium nitride films, and aluminum nitride films, and oxide films such as aluminum titanium oxide films can be preferably used. The thickness of the first layer can be, for example, 0.5 nm or more and 20 nm or less, preferably 0.5 nm or more and 15 nm or less, more preferably 0.5 nm or more and 10 nm or less, and even more preferably 1 nm or more and 6 nm or less. Typically, it can be about 5 nm or about 2 nm. Even when the first layer is this thin, it can sufficiently reduce the resistance of the semiconductor layers 231a and 231

[0222] As the first layer, a film containing at least one of metal elements such as aluminum, titanium, tantalum, tungsten, chromium, and ruthenium can be used. In particular, it preferably contains at least one of aluminum, titanium, tantalum, and tungsten. Alternatively, a nitride containing at least one of these metal elements, or an oxide containing at least one of these metal elements can be preferably used. In particular, metal films such as tungsten films and titanium films, nitride films such as aluminum titanium nitride films, titanium nitride films, and aluminum nitride films, and oxide films such as aluminum titanium oxide films can be preferably used. The thickness of the first layer can be, for example, 0.5 nm or more and 20 nm or less, preferably 0.5 nm or more and 15 nm or less, more preferably 0.5 nm or more and 10 nm or less, and even more preferably 1 nm or more and 6 nm or less. Typically, it can be about 5 nm or about 2 nm. Even when the first layer is this thin, it can sufficiently reduce the resistance of the semiconductor layers 231a and 231 Also, after forming the gate insulating layer 225 and the gates 223a, 223b, a first layer is formed so as to contact a part of the semiconductor layers 231a, 231b, and by performing a heat treatment, the resistance of the region can be reduced to form the low-resistance region 231n. As the first layer, a film containing at least one of metal elements such as aluminum, titanium, tantalum, tungsten, chromium, and ruthenium can be used. In particular, it preferably contains at least one of aluminum, titanium, tantalum, and tungsten. Alternatively, a nitride containing at least one of these metal elements, or an oxide containing at least one of these metal elements can be preferably used. In particular, metal films such as tungsten films and titanium films, nitride films such as aluminum titanium nitride films, titanium nitride films, and aluminum nitride films, and oxide films such as aluminum titanium oxide films can be preferably used. The thickness of the first layer can be, for example, 0.5 nm or more and 20 nm or less, preferably 0.5 nm or more and 15 nm or less, more preferably 0.5 nm or more and 10 nm or less, and even more preferably 1 nm or more and 6 nm or less. Typically, it can be about 5 nm or about 2 nm. Even when the first layer is this thin, it can sufficiently reduce the resistance of the semiconductor layers 231a and 231 Also, after forming the gate insulating layer 225 and the gates 223a, 223b, a first layer is formed so as to contact a part of the semiconductor layers 231a, 231b, and by performing a heat treatment, the resistance of the region can be reduced to form the low-resistance region 231n. As the first layer, a film containing at least one of metal elements such as aluminum, titanium, tantalum, tungsten, chromium, and ruthenium can be used. In particular, it preferably contains at least one of aluminum, titanium, tantalum, and tungsten. Alternatively, a nitride containing at least one of these metal elements, or an oxide containing at least one of these metal elements can be preferably used. In particular, metal films such as tungsten films and titanium films, nitride films such as aluminum titanium nitride films, titanium nitride films, and aluminum nitride films, and oxide films such as aluminum titanium oxide films can be preferably used.

[0223] The thickness of the first layer can be, for example, 0.5 nm or more and 20 nm or less, preferably 0.5 nm or more and 15 nm or less, more preferably 0.5 nm or more and 10 nm or less, and even more preferably 1 nm or more and 6 nm or less. Typically, it can be about 5 nm or about 2 nm. Even when the first layer is this thin, it can sufficiently reduce the resistance of the semiconductor layers 231a and 231 The thickness of the first layer can be, for example, 0.5 nm or more and 20 nm or less, preferably 0.5 nm or more and 15 nm or less, more preferably 0.5 nm or more and 10 nm or less, and even more preferably 1 nm or more and 6 nm or less. Typically, it can be about 5 nm or about 2 nm. Even when the first layer is this thin, it can sufficiently reduce the resistance of the semiconductor layers 231a and 231 The thickness of the first layer can be, for example, 0.5 nm or more and 20 nm or less, preferably 0.5 nm or more and 15 nm or less, more preferably 0.5 nm or more and 10 nm or less, and even more preferably 1 nm or more and 6 nm or less. Typically, it can be about 5 nm or about 2 nm. Even when the first layer is this thin, it can sufficiently reduce the resistance of the semiconductor layers 231a and 231 The thickness of the first layer can be, for example, 0.5 nm or more and 20 nm or less, preferably 0.5 nm or more and 15 nm or less, more preferably 0.5 nm or more and 10 nm or less, and even more preferably 1 nm or more and 6 nm or less. Typically, it can be about 5 nm or about 2 nm. Even when the first layer is this thin, it can sufficiently reduce the resistance of the semiconductor layers 231a and 231 The resistance of b can be reduced.

[0224] The low resistance region 231n is a region having a higher carrier density than the channel formation region 231i. For example, the low resistance region 231n has a higher hydrogen concentration than the channel formation region 231i. or a region containing more oxygen vacancies than the channel formation region 231i. When oxygen vacancies in an oxide semiconductor are combined with hydrogen atoms, carriers are generated. It becomes a source of

[0225] A heat treatment is performed in a state where the first layer is provided in contact with a part of the semiconductor layers 231a and 231b. By doing this, oxygen in the region is absorbed into the first layer, forming many oxygen vacancies in the region. This allows the low resistance region 231n to be an extremely low resistance region. can.

[0226] The low resistance region 231n thus formed has the characteristic that it is difficult for the resistance to increase in the subsequent processing. For example, a heat treatment in an atmosphere containing oxygen or a film formation treatment in an atmosphere containing oxygen may be performed. Since there is no risk of the conductivity of the low resistance region 231n being impaired even if a treatment is performed, the electrical characteristics Therefore, a transistor having good electrical conductivity and high reliability can be realized.

[0227] If the first layer after the heat treatment has electrical conductivity, the first layer may be removed after the heat treatment. On the other hand, when the first layer has insulating properties, it is preferable to leave it as it is. The first layer can function as a protective insulating film.

[0228] The FPC is electrically connected to the conductive layer 222c. is in contact with 9, the connection body 139 is in contact with the conductive layer 111b, and the conductive layer 111b is in contact with the conductive layer 222c is formed on the insulating layer 214, and the conductive layer 111b is formed on the insulating layer 121 The conductive layer 222c can be formed in the same process and with the same material as the conductive layers 222a and 222b. The conductive layer 111b can be formed in the same process and with the same material as the pixel electrode 111a.

[0229] As shown in FIG. 9, the display device may not have the conductive layers 222f, 222g, 222p , 222q (see FIGS. 7 and 8) that transmit visible light. Thereby, the manufacturing process of the display device can be simplified.

[0230] In FIG. 9, the conductive layer 115c and the semiconductor layer 231a (low-resistance region 231n thereof) are in contact with each other , and the conductive layer 115a and the semiconductor layer 231b (low-resistance region 231n thereof) are in contact with each other . For example, by using a material (such as a metal oxide) that transmits visible light for the semiconductor layer 231a and the semiconductor layer 231b , a region that transmits visible light can be provided at the contact portion between the capacitive element Cw and the transistor SW11 , and at the contact portion between the liquid crystal element 110 and the transistor SW12.

[0231] In FIG. 9, the semiconductor layer 231a (low-resistance region 231n thereof) and the conductive layer 222a that blocks visible light are in contact with each other, and the semiconductor layer 231b (low-resistance region 231n thereof) and the conductive layer 222b that blocks visible light are in contact with each other.

[0232] In FIG. 9, the low-resistance region 231n is a region of the semiconductor layers 231a and 231b that is in contact with the insulating layer 214 . The insulating layer 214 preferably contains nitrogen or hydrogen. Thereby Accordingly, nitrogen or hydrogen in the insulating layer 214 enters the low-resistance region 231n, and the carrier concentration of the low-resistance region 2 31n can be increased.

[0233] <Configuration Example 3 of Display Module> The display module 55 shown in FIG. 10 and the display module 57 shown in FIG. 11 each have a liquid crystal display device and a light-emitting device stacked thereon. The display modules 55 and 57 are each configured to emit the light 33 emitted by the light-emitting device to the outside through the liquid crystal display device. Further, the liquid crystal display device is configured such that light enters from an edge-light type light, and the light is scattered by a layer containing a liquid crystal material, and the scattered light 34 is emitted to the outside. The liquid crystal display device has a structure in which a light-emitting device is stacked on a liquid crystal display device. The display modules 55 and 57 are each configured to emit the light 33 emitted by the light-emitting device to the outside through the liquid crystal display device. Also, the liquid crystal display device is configured such that light enters from an edge-light type light, and the light is scattered by a layer containing a liquid crystal material, and the scattered light 34 is emitted to the outside. The configuration of the liquid crystal display device shown in FIGS. 10 and 11 is the same as that in FIG. 5A, and thus detailed description thereof will be omitted. The liquid crystal display device has a structure in which light enters from an edge-light type light, and the light is scattered by a layer containing a liquid crystal material, and the scattered light 34 is emitted to the outside. The configuration of the liquid crystal display device shown in FIGS. 10 and 11 is the same as that in FIG. 5A, and thus detailed description thereof will be omitted.

[0234] Since the configuration of the liquid crystal display device shown in FIGS. 10 and 11 is the same as that in FIG. 5A, detailed description thereof will be omitted.

[0235] The display module 55 shown in FIG. 10 has a light-emitting device 54. The light-emitting device 54 is attached to the liquid crystal display device by an adhesive layer 1 69. The light-emitting device 54 is a top-emission structure light-emitting device to which a color filter method is applied. The light-emitting element 150 emits light toward the liquid crystal display device side through a coloring layer (see light 33). The light-emitting device 54 is a top-emission structure light-emitting device to which a color filter method is applied. The light-emitting element 150 emits light toward the liquid crystal display device side through a coloring layer (see light 33). The light-emitting device 54 is a top-emission structure light-emitting device to which a color filter method is applied. The light-emitting element 150 emits light toward the liquid crystal display device side through a coloring layer (see light 33).

[0236] The light-emitting device 54 includes a substrate 161, an adhesive layer 163, an insulating layer 165, a transistor SW13, a light-emitting element 150, an adhesive layer 167, an insulating layer 168, a coloring layer CF1, a coloring layer CF2, and the like. The light-emitting device 54 includes a substrate 161, an adhesive layer 163, an insulating layer 165, a transistor SW13, a light-emitting element 150, an adhesive layer 167, an insulating layer 168, a coloring layer CF1, a coloring layer CF2, and the like. The light-emitting device 54 includes a substrate 161, an adhesive layer 163, an insulating layer 165, a transistor SW13, a light-emitting element 150, an adhesive layer 167, an insulating layer 168, a coloring layer CF1, a coloring layer CF2, and the like.

[0237] As the transistor SW13, a transistor that can be used in a liquid crystal display device can be applied. The transistor included in the liquid crystal display device and the transistor included in the light-emitting device 54 are the same. As the transistor SW13, a transistor that can be used in a liquid crystal display device can be applied. The transistor included in the liquid crystal display device and the transistor included in the light-emitting device 54 are the same. It may be the same or different.

[0238] As the light-emitting element 150, it is preferable to use an EL element such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting D iode). Examples of the light-emitting substance included in the EL element include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), an inorganic compound (quantum do t material, etc.), a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF) material and the like. Further, as the light-emitting element 150, an LED such as a micro LED (Light Emi tting Diode) can also be used.

[0239] The light-emitting element 150 includes a pixel electrode 151, an EL layer 152, and a common electrode 153. The pixel electrode 151 is electrically connected to the source or drain of the transistor SW13 . The pixel electrode 151 preferably reflects visible light. The end portion of the pixel electrode 151 is insulated by the layer 155. The EL layer 152 is commonly used for a plurality of sub-pixels. The EL layer 152 contains at least a light-emitting substance. The common electrode 153 transmits visible light.

[0240] The light-emitting device 54 has a plurality of pixels arranged in a matrix. One pixel has one or more sub-pixels. One sub-pixel has one light-emitting element 150. For example, the pixel has a configuration having three sub-pixels (three colors of R, G, B, or three colors of yellow (Y), cyan (C), and magenta (M), etc.), or a configuration having four sub-pixels (R, G, B, white Four colors of (W), or four colors such as R, G, B, and Y can be applied.

[0241] The fineness of the light-emitting device may be the same as or different from that of the liquid crystal display device. . When the fineness of the light-emitting device 54 is the same as that of the liquid crystal display device, one pixel of the liquid crystal display device overlaps with one pixel (a plurality of sub-pixels) of the light-emitting device 54. One pixel (a plurality of sub-pixels) of the light-emitting device 54 overlaps.

[0242] The light emitted by the light-emitting element 150 is emitted from the light-emitting device 54 through the coloring layer. For example, light of the first color is extracted through the coloring layer CF1, and light of the second color is extracted through the coloring layer CF2. Light is extracted.

[0243] The FPC3 is electrically connected to the conductive layer 222d through the connector 139.

[0244] As the insulating layers 165 and 168, it is preferable to use highly waterproof insulating layers. This suppresses the entry of impurities such as water into the light-emitting element 150 and can improve the reliability of the light-emitting element 150. The insulating layers 165 and 168 preferably each have an inorganic insulating film.

[0245] As the adhesive layers 163, 167, and 169, various curable adhesives such as ultraviolet curable type and other light curable adhesives, reaction curable adhesives, thermosetting adhesives, and anaerobic adhesives can be used. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like. In particular, materials with low moisture permeability such as epoxy resins are preferable. Also, a two-component mixed resin may be used. ​​​​​Alternatively, an adhesive sheet or the like may be used.

[0246] There are no major restrictions on the material of the substrate 161, etc., and various substrates can be used. For example, a glass substrate, a quartz substrate, a sapphire substrate, a semiconductor substrate, a ceramic substrate, a metal substrate, or a plastic substrate or the like can be used.

[0247] As the substrate 161, for example, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin , polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyphenylene ether sulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, poly urethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. It is preferable to use a resin substrate. Thereby, the light-emitting device 54 can be made thinner and lighter.

[0248]

[0249] The display module 57 shown in FIG. 11 has a light-emitting device 56.

[0250] The light-emitting device 56 mainly has a color filter layer CF1, a color filter layer CF2, an insulating layer 168, and an adhesive layer 169 and does not have a protective layer 154, and the EL layer 152 is formed separately for each sub-pixel, which is different from the light-emitting device 54. The description of the configuration common to the light-emitting device 54 is omitted.

[0250] Since the EL layer 152 is formed separately for each sub-pixel, the light-emitting device 56 does not require a color filter layer. Yes. Further, by having the protective layer 154 on the common electrode 153, the reliability of the light-emitting element 150 can be enhanced. The protective layer 154 preferably has a highly waterproof inorganic film.

[0251] As described above, the display device according to one aspect of the present invention has a function for adding a correction signal to an image signal and thus can drive the liquid crystal element at a high voltage. Therefore, a liquid crystal element with a high driving voltage can be used in the display device. For example, even in a display device using a liquid crystal element driven in reverse mode or a liquid crystal element containing a liquid crystal material and a polymer material, an image can be displayed well.

[0252] Further, in the display device according to one aspect of the present invention, since the connection part where the transistor and the pixel electrode are electrically connected has a function of transmitting visible light, the aperture ratio of the pixel can be further increased. .

[0253] Further, since the display device according to one aspect of the present invention has a function of displaying by a field sequential driving method , the aperture ratio of the pixel can be further increased, and since a coloring layer such as a color filter can be made unnecessary , the transmittance of the pixel can be increased.

[0254] The display device according to one aspect of the present invention has a configuration suitable as a see-through display.

[0255] This embodiment can be appropriately combined with other embodiments. Also, in this specification , when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined .

[0256] (Embodiment 2) In this embodiment, an electronic device according to an aspect of the present invention will be described with reference to FIGS. 12 to 14. .

[0257] The electronic device of this embodiment has a display device according to an aspect of the present invention in the display unit. Thereby , the display unit of the electronic device can display high-quality video. Also, it can display reliably over a wide temperature range.

[0258] In the display unit of the electronic device of this embodiment, for example, video having a resolution of full high vision, 2K, 4K, 8K, 1 6K, or higher can be displayed.

[0259] Examples of the electronic device that can use the display device according to an aspect of the present invention include, for example, a television device, a desktop or notebook personal computer, a monitor for a computer, a digital signage, a pachi inko machine, and other electronic devices having a relatively large screen such as a large game machine. In addition, a digital camera , a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, an audio playback device, and the like can be mentioned. Further, the display device according to an aspect of the present invention is suitable for a portable type electronic device, a wearable electronic device (wearable device), a VR (Virtual Reality) device, an AR (Augmented Reality) device, and the like. It can also be preferably used.

[0260] The electronic device according to an aspect of the present invention may have a secondary battery, and it is preferable that the secondary battery can be charged using non-contact power transmission.

[0261] Examples of secondary batteries include lithium-ion secondary batteries such as lithium polymer batteries (lithium ion polymer batteries) that use a gel electrolyte, nickel-metal hydride batteries, nickel-cadmium batteries, organic redox batteries, lead-acid batteries, air secondary batteries, nickel-zinc batteries, silver-zinc batteries, and the like. .

[0262] An electronic device according to one aspect of the present invention may have an antenna. By receiving a signal with the antenna, it is possible to display video, information, etc. on the display unit. Further, when the electronic device has an antenna and a secondary battery, the antenna may be used for non-contact power transmission.

[0263] An electronic device according to one aspect of the present invention may have a sensor (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0264] An electronic device according to one aspect of the present invention can have various functions. For example, functions such as displaying various information (still images, moving images, text images, etc.) on the display unit, touch panel function, calendar, date or time display function, executing various software (programs), wireless communication function, reading programs or data recorded on a recording medium, and the like.

[0265] Furthermore, in an electronic device having a plurality of display units, it is possible to have a function of mainly displaying image information on one display unit and mainly displaying character information on another display unit, or a function of displaying a stereoscopic image by displaying an image considering the visual difference on the plurality of display units. ​ Furthermore, in an electronic device having an image receiving unit, it can have functions such as taking a still image or a moving image, automatically or manually correcting the captured image, saving the captured image in a recording medium (external or built into the electronic device), and displaying the captured image on a display unit. Note that the functions of the electronic device according to an aspect of the present invention are not limited to these, and it can have various functions.

[0266] FIG. 12A shows a television device 1810. The television device 1810 includes a display unit 1811, a housing 1812, a speaker 1813, etc. Furthermore, it can have an LED lamp, operation keys (including a power switch or an operation switch), connection terminals, various sensors, a microphone, etc.

[0267] The television device 1810 can be operated by a remote control operation unit 1814.

[0268] Examples of the broadcast radio waves that the television device 1810 can receive include terrestrial waves or radio waves transmitted from a satellite. Also, as broadcast radio waves, there are analog broadcasts, digital broadcasts, etc., and there are also broadcasts of video and audio, or audio only. For example, it can receive broadcast radio waves transmitted in a specific frequency band within the UHF band (about 300 MHz to 3 GHz) or the VHF band (30 MHz to 300 MHz). Also, for example, by using a plurality of data received in a plurality of frequency bands, the transfer rate can be increased, and more information can be obtained. Thereby, a video having a resolution exceeding full high definition can be displayed on the display unit 1811. For example, 4K, 8K, 16K, or higher. ​​​​​​​​​​​​​​It is possible to display a video with a resolution.

[0269] Also, data transmitted by data transmission technology via a computer network such as the Internet, LAN (Local Area Network), Wi-Fi (registered trademark), etc. may be used to generate an image to be displayed on the display unit 1811. In this case, the television device 1810 may not have a tuner.

[0270] FIG. 12B shows a digital signage 1820 attached to a columnar pillar 1822. The digital signage 1820 has a display unit 1821.

[0271] The larger the display unit 1821, the more information can be provided at one time. Also, the larger the display unit 1821, the more easily it catches people's eyes, and for example, the advertising effect can be enhanced.

[0272] By applying a touch panel to the display unit 1821, not only can a still image or a moving image be displayed on the display unit 1821, but also the user can operate it intuitively, which is preferable. Also, when used for applications such as providing route information or traffic information, the usability can be enhanced by intuitive operation.

[0273] FIG. 12C shows a notebook personal computer 1830. The personal computer 1830 has a display unit 1831, a housing 1832, a touch pad 1833, a connection port 1834, etc.

[0274] The touch pad 1833 can be used as an input means such as a pointing device or a graphics tablet. It functions and can be operated with a finger, a stylus, etc.

[0275] In addition, a display element is incorporated in the touch pad 1833. As shown in FIG. 12C, By displaying the input keys 1835 on the surface of the touch pad 1833, the touch pad 183 3 can be used as a keyboard. At this time, when touching the input key 1835 In order to realize a tactile sensation by vibration, a vibration module may be incorporated in the touch pad 1833 as well.

[0276] The information terminal 1840 shown in FIG. 12D includes a display unit 1841, a housing 1842, a detection unit 1843, etc. has.

[0277] By applying a touch panel to the display unit 1841, the information terminal 1840 can be operated using a finger, a stylus, etc.

[0278] The detection unit 1843 can use at least one of an illuminance sensor, an imaging device, an attitude detection device, a pressure sensor, a human presence sensor, etc. can be used.

[0279] FIGS. 13A and 13B show a portable information terminal 800. The portable information terminal 800 includes a housing 801 a housing 802, a display unit 803, a display unit 804, a hinge unit 805, etc.

[0280] The housing 801 and the housing 802 are connected by a hinge unit 805. The portable information terminal 800 can be opened from the folded state shown in FIG. 13A to the state where the housing 801 and the housing 80 2 are opened as shown in FIG. 13B.

[0281] For example, document information can be displayed on the display unit 803 and the display unit 804, and an e-book terminal It can also be used as such. Further, still images and moving images can be displayed on the display unit 803 and the display unit 804. It can also be displayed.

[0282] As described above, since the portable information terminal 800 can be folded when carried, it has excellent versatility. Excellent in versatility.

[0283] Note that the housing 801 and the housing 802 may have a power button, an operation button, an external connection port, a speaker, a microphone, etc. It may have a speaker, a microphone, etc.

[0284] An example of a portable information terminal is shown in FIG. 13C. The portable information terminal 810 shown in FIG. 13C includes a housing 811, a display unit 812, an operation button 813, an external connection port 814, a speaker 815, a microphone 816, a camera 817, etc. 1, a display unit 812, an operation button 813, an external connection port 814, a speaker 815, a microphone 816, a camera 817, etc. It has a camera 817, etc.

[0285] The portable information terminal 810 is provided with a touch sensor on the display unit 812. Any operation such as making a phone call or inputting characters can be performed by touching the display unit 812 with a finger or a stylus. Any operation such as making a phone call or inputting characters can be performed by touching the display unit 812 with a finger or a stylus. It can be performed.

[0286] Also, by operating the operation button 813, the power can be turned on and off, and the type of image displayed on the display unit 812 can be switched. For example, it can be switched from the mail creation screen to the main menu screen. Also, by operating the operation button 813, the power can be turned on and off, and the type of image displayed on the display unit 812 can be switched. For example, it can be switched from the mail creation screen to the main menu screen. It can be switched.

[0287] Further, by providing a detection device such as a gyro sensor or an acceleration sensor inside the portable information terminal 810, the orientation (portrait or landscape) of the portable information terminal 810 can be determined, and the display orientation of the display unit 812 can be automatically switched. Also, the switching of the display orientation of the screen can be performed by touching the display unit 812, operating the operation button 813, or using the microphone 816. By providing a detection device such as a gyro sensor or an acceleration sensor inside the portable information terminal 810, the orientation (portrait or landscape) of the portable information terminal 810 can be determined, and the display orientation of the display unit 812 can be automatically switched. The display orientation of the screen can be automatically switched. Also, the switching of the display orientation of the screen can be performed by touching the display unit 812, operating the operation button 813, or using the microphone 816. The switching of the display orientation of the screen can be performed by touching the display unit 812, operating the operation button 813, or using the microphone 816. It can also be performed by voice input or the like.

[0288] The portable information terminal 810 has, for example, one or a plurality of functions selected from a telephone, a notebook, an information browsing device, or the like. Specifically, it can be used as a smartphone. The portable information terminal 810 can execute various applications such as mobile phone, e-mail, text browsing and creation, music playback, video playback, Internet communication, and games.

[0289] FIG. 13D shows an example of a camera. The camera 820 includes a housing 821, a display unit 822, an operation button 823, a shutter button 824, and the like. The camera 820 also has a detachable lens 826 attached thereto.

[0290] Here, the camera 820 is configured such that the lens 826 can be removed from the housing 821 and replaced, but the lens 826 and the housing may be integrated.

[0291] The camera 820 can capture a still image or a moving image by pressing the shutter button 824. The display unit 822 also functions as a touch panel, and it is also possible to capture an image by touching the display unit 82 2.

[0292] Note that the camera 820 can be separately equipped with a strobe device, a viewfinder, or the like. Alternatively, these may be incorporated in the housing 821.

[0293] FIG. 14A shows an example in which a display device according to an aspect of the present invention is mounted as an in-vehicle display. The display units 1100 and 1110 display navigation information, a speedometer, a tachometer, ​​​​​​By displaying the speedometer, travel distance, fuel gauge, gear state, air conditioning settings, etc., various information can be provided. The display can be appropriately changed in terms of its display items and layout according to the user's preferences. The display device according to one aspect of the present invention can be used in a wide temperature range and can perform reliable display in both low-temperature and high-temperature environments. Therefore, by using the display device according to one aspect of the present invention as an in-vehicle display, the driving safety can be enhanced.

[0294] The display device according to one aspect of the present invention has a high aperture ratio of pixels and a small light-blocking area, so the scenery behind the display device can be seen through the display device. Therefore, the display device according to one aspect of the present invention can be used for the front windshield of a vehicle, the window of a building, a show window, devices for AR (Augmented Reality), etc.

[0295] FIG. 14B shows an example of using the display device according to one aspect of the present invention for the window of a building. The display device 1200 may be provided over the entire window, or the display device 1200 may be provided on a part of the window and glass may be used for the other part. The display device 1200 can display the image 1210 facing indoors or outdoors. Also, when the image 1210 is not displayed on the display device 1200, since the display device 1200 transmits light, it is possible to see from one of the indoor and outdoor sides to the other through the display device 1200. That is, the display device 1200 can be treated like a conventional window glass.

[0296] FIG. 14C shows an example of using the display device according to one aspect of the present invention for the case of a show window. The display device 1300 may be provided over the entire one side of the case, or the display device 1300 may be provided on a part. ​ For other parts, glass may be used. The display device 1300 can display an image 1310 toward the outside of the case. As the image 1310, for example, an image decorating the interior decorative body 1320 (such as a product, a bag in FIG. 14C) (a ribbon in FIG. 14C) is cited. Also, the image 1310 may include text for product description or promotion.

[0297] As described above, an electronic device can be obtained by applying the display device according to one aspect of the present invention. The applicable range of the display device is extremely wide and can be applied to electronic devices in all fields.

[0298] This embodiment can be appropriately combined with other embodiments.

Description of Reference Numerals

[0299] CF1: Coloring layer, CF2: Coloring layer, CSCOM: Wiring, GL1: Wiring, GL2: Wiring, S L1: Wiring, SL2: Wiring, SW11: Transistor, SW12: Transistor, SW1 3: Transistor, VCOM: Wiring, 10: Display device, 11: Touch panel, 15: Pixel , 16: Pixel, 30: Light unit, 32: Light, 33: Light, 34: Scattered light, 35: External light , 50: Display module, 51: Display module, 52: Display module, 54: Light-emitting device , 55: Display module, 56: Light-emitting device, 57: Display module, 71: Connection part, 7 2: Connection part, 100: Display area, 110: Liquid crystal element, 111a: Pixel electrode, 111b: Conductive layer, 112: Layer containing liquid crystal material, 113: Common electrode, 114a: Alignment film, 114b: Alignment film, 115a: Conductive layer, 115b: Conductive layer, 115c: Conductive layer, 120: Pixel circuit, 1 21: Insulating layer, 131: Substrate, 132: Substrate, 139: Connector, 141: Adhesive layer, 150 : Light-emitting element, 151: Pixel electrode, 152: EL layer, 153: Common electrode, 154: Protection layer, 155: Insulating layer, 161: Substrate, 163: Adhesive layer, 165: Insulating layer, 167: Adhesive layer, 1 68: Insulating layer, 169: Adhesive layer, 180: Substrate, 181: Electrode, 182: Electrode, 185: Insulating layer, 186: Adhesive layer, 187: Wiring, 188: Conductive layer, 189: Connector, 211: Gate insulating layer, 213: Insulating layer, 214: Insulating layer, 215: Insulating layer, 221a: Gate, 2 21b: Gate, 221c: Conductive layer, 221m: Gate, 221n: Gate, 221s: Gate, 221t: Gate, 221u: Gate, 222a: Conductive layer, 222b: Conductive layer, 222c: Conductive layer, 222d: Conductive layer, 222e: Conductive layer, 222f: Conductive layer, 222g : Conductive layer, 222m: Conductive layer, 222n: Conductive layer, 222p: Conductive layer, 222q: Conductive layer , 222s: Conductive layer, 222t: Conductive layer, 222u: Conductive layer, 223a: Gate, 223 b: Gate, 223m: Gate, 223n: Gate, 223s: Gate, 223t: Gate , 223u: Gate, 225: Gate insulating layer, 231a: Semiconductor layer, 231b: Semiconductor layer, 231i: Channel formation region, 231n: Low-resistance region, 800: Portable information terminal, 80 1: Housing, 802: Housing, 803: Display unit, 804: Display unit, 805: Hinge part, 810 : Portable information terminal, 811: Housing, 812: Display unit, 813: Operation button, 814: External connection port, 815: Speaker, 816: Microphone, 817: Camera, 820: Camera, 82 1: Housing, 822: Display unit, 823: Operation button, 824: Shutter button, 826: Lens, 1100: Display unit, 1110: Display unit, 1200: Display device, 1210: Image, 1300: Display device, 1310: Image, 1320: Object to be decorated, 1810: Television set 1811: Display unit, 1812: Housing, 1813: Speaker, 1814: Remote control operation unit, 1820: Digital signage, 1821: Display unit, 1822: Column, 1830: Personal computer, 1831: Display unit, 1832: Housing, 1833: Touch pad, 1 834: Connection port, 1835: Input key, 1840: Information terminal, 1841: Display unit, 1 842: Housing, 1843: Detection unit

Claims

[Claim 1] having a pixel, The pixel includes a first transistor, a second transistor, a first insulating layer, a second insulating layer, a first conductive layer, a pixel electrode, a layer including a liquid crystal material, and a common electrode; the first insulating layer is located on a channel formation region of the first transistor; the first conductive layer is located on the first insulating layer; The second insulating layer includes the first transistor, the second transistor, the first insulating layer, and located on the first conductive layer, the pixel electrode is located on the second insulating layer; the layer including the liquid crystal material is located on the pixel electrodes; the common electrode is located on the layer including the liquid crystal material; the common electrode has a region overlapping with the first conductive layer with the layer containing a liquid crystal material and the pixel electrode interposed therebetween; The pixel further includes a first connection portion and a second connection portion, the first conductive layer is electrically connected to the first transistor in the first connection portion; the pixel electrode is electrically connected to the second transistor at the second connection portion; The display device, wherein the first conductive layer, the pixel electrode, and the common electrode each have a function of transmitting visible light.

Images