Functional panel

Abstract

To provide a new functional panel that is superior in convenience or reliability.SOLUTION: In a functional panel including a first pixel, the first pixel comprises a first element, a color conversion layer and a first functional layer. The first element holds the first functional layer between itself and the color conversion layer. The first element includes a function for emitting light. The first element contains gallium nitride. The color conversion layer includes a function for converting the color of the light emitted by the first element, into a different color. The first functional layer comprises a first insulation film and a pixel circuit. The first insulation film includes a region sandwiched between the pixel circuit and the first element. The first insulation film has an opening. The pixel circuit comprises a first transistor. The first transistor includes a first oxide semiconductor film. The first transistor is electrically connected to the first element, at the opening.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] One aspect of the present invention relates to a functional panel, a display device, an input / output device, an information processing device, or a semiconductor device and.

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Or, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, their driving methods, or their manufacturing methods.

Background Art

[0003] Displays are known in which the chromaticity change of a micro light-emitting diode with respect to current density is small (Patent Document 1). Specifically, each of a plurality of pixels includes a display element and a microcontroller. The microcontroller includes a first transistor, a triangular wave generation circuit, a comparator, a switch, and a constant current circuit. The first transistor has a function of holding a potential corresponding to data written to the pixel by being turned off. The triangular wave generation circuit has a function of generating a triangular wave signal. The comparator has a function of generating an output signal according to the held potential and the triangular wave signal. The switch is a display that has a function of controlling whether or not to flow the current flowing through the constant current circuit to the display element according to the output signal

Prior Art Documents

Patent Document

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] One aspect of the present invention is to provide a novel functional panel excellent in convenience, usefulness, or reliability. Or, one of the problems is to provide a novel display device excellent in convenience, usefulness, or reliability. Or, one of the problems is to provide a novel input / output device excellent in convenience, usefulness, or reliability. Or, one of the problems is to provide a novel information processing device excellent in convenience, usefulness, or reliability. Or, one of the problems is to provide a novel functional panel, a novel display device, a novel input / output device, a novel information processing device, or a novel semiconductor device. Or, one of the problems is to provide a novel functional panel, a novel display device, a novel input / output device, a novel information processing device, or a novel semiconductor device. It should be noted that the description of these problems does not prevent the existence of other problems. It should be noted that one aspect of the present invention does not necessarily need to solve all of these problems. It should be noted that other problems will be naturally revealed from the descriptions in the specification, drawings, claims, etc., and it is possible to extract these other problems from the descriptions in the specification, drawings, claims, etc.

[0006] It should be noted that the description of these problems does not prevent the existence of other problems. It should be noted that one aspect of the present invention does not necessarily need to solve all of these problems. It should be noted that other problems will be naturally revealed from the descriptions in the specification, drawings, claims, etc., and it is possible to extract these other problems from the descriptions in the specification, drawings, claims, etc. It should be noted that one aspect of the present invention does not necessarily need to solve all of these problems. It should be noted that other problems will be naturally revealed from the descriptions in the specification, drawings, claims, etc., and it is possible to extract these other problems from the descriptions in the specification, drawings, claims, etc. It should be noted that other problems will be naturally revealed from the descriptions in the specification, drawings, claims, etc., and it is possible to extract these other problems from the descriptions in the specification, drawings, claims, etc.

Means for Solving the Problems

[0007] (1) One aspect of the present invention is a functional panel having a first pixel. Further, the first pixel includes a first element, a color conversion layer, and a first functional layer. The first pixel includes a first element, a color conversion layer, and a first functional layer.

[0008] The first element sandwiches a first functional layer between itself and the color conversion layer, and the first element has a function of emitting light. Further, the first element contains gallium nitride.

[0009] The color conversion layer has a function of converting the color of the light emitted by the first element into a different color.

[0010] The first functional layer includes a first insulating film and a pixel circuit. The first insulating film has a region sandwiched between the pixel circuit and the first element, and the first insulating film has an opening.

[0011] The pixel circuit includes a first transistor. The first transistor contains a first oxide semiconductor film and the first transistor is electrically connected to the first element at the opening.

[0012] (2) One aspect of the present invention is a functional panel having a first pixel. Further, the first pixel includes a first element and a first functional layer.

[0013] The first element has a function of emitting light, and the first element includes a first electrode, a second electrode, and a layer containing a light-emitting material. The layer containing the light-emitting material has a region sandwiched between the first electrode and the second electrode, and the layer containing the light-emitting material contains gallium nitride.

[0014] The first functional layer includes a first insulating film and a pixel circuit. The first insulating film has a region sandwiched between the pixel circuit and the first element, and the first insulating film has an opening.

[0015] The pixel circuit includes a first transistor. The first transistor contains a first oxide semiconductor film and the first transistor is electrically connected to the first electrode at the opening.

[0016] This allows the pixel circuit to be arranged over the first element. The ratio of the area of ​​the first element to the area of ​​the first pixel can be increased. It is possible to obtain high brightness while suppressing the current density flowing through the The reliability can be improved as compared with a structure in which an organic compound is used for the layer containing the It is possible to suppress the current leaking from the first transistor in the off state. The operating characteristics of the transistors are less likely to be distributed, and display unevenness can be suppressed. The operating characteristics of the pixel circuit can be stabilized, resulting in improved convenience, usefulness, and reliability. It is possible to provide an excellent and novel functional panel.

[0017] (3) In addition, one aspect of the present invention is a method for manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a first insulating film; This is a functional panel including:

[0018] The second insulating film has a region between the first transistor and the third insulating film, and the second insulating film The insulating film includes silicon and oxygen, and the third insulating film includes silicon and nitrogen.

[0019] This prevents impurities from diffusing into the first transistor, which may cause operational problems. Alternatively, the diffusion of impurities such as water or hydrogen into the first transistor can be prevented by As a result, a novel functional panel with excellent convenience, usefulness, and reliability can be obtained. can provide the following:

[0020] (4) Another aspect of the present invention is the above functional panel having a set of pixels.

[0021] The set of pixels comprises a first pixel and a second pixel, the second pixel comprising a second element.

[0022] The first insulating film includes a fourth insulating film, and the fourth insulating film has a function of separating the second element from the first element. Thereby, the influence of the operation of the first element on the operation of the second element can be suppressed.

[0023] Or, the second element can be disposed closer to the first element. Or, the ratio of the area of the first element to the area of the first pixel and the ratio of the area of the second element to the area of the second pixel can be increased. As a result, a novel functional panel excellent in convenience, usefulness, or reliability can be provided.

[0024] (5) Further, one aspect of the present invention is the above functional panel having a first drive circuit.

[0025] The first functional layer includes a first drive circuit, and the first drive circuit includes a second transistor.

[0026] The second transistor includes a second oxide semiconductor film, and the second oxide semiconductor film contains elements contained in the first oxide semiconductor film.

[0027] Thereby, in the step of forming the semiconductor film of the transistor included in the pixel circuit, the semiconductor film of the transistor included in the first drive circuit can be formed. Or, the manufacturing process of the functional panel can be simplified. As a result, a novel functional panel excellent in convenience, usefulness, or reliability can be provided.

[0028] (6) Further, one aspect of the present invention is the above functional panel having a second functional layer.

[0029] The second functional layer includes a first contact, a second drive circuit, and a fifth insulating film.

[0030] The first contact is electrically connected to the second drive circuit, and the second drive circuit includes a third transistor which includes a semiconductor containing an element of Group 14.

[0031] The first functional layer includes a sixth insulating film and the second contact. The sixth insulating film includes a region sandwiched between the fifth insulating film and the fourth insulating film, and the sixth insulating film includes a region joined to the fifth insulating film and includes a region joined to the fifth insulating film. and includes a region joined to the fifth insulating film.

[0032] The second contact is electrically connected to the first contact and is electrically connected to the pixel circuit .

[0033] Thereby, for example, a pixel signal can be supplied using the second drive circuit. Also for example, a transistor using single crystal silicon as the semiconductor can be used for the second drive circuit . Or, for example, the second drive circuit can be arranged so as to overlap the first pixel . Or, the outer shape of the functional panel can be miniaturized. As a result, a novel functional panel excellent in convenience, utility or reliability can be provided .

[0034] (7) Also, one aspect of the present invention is the above-described functional panel in which the second pixel has a function of displaying light emitted by the second element .

[0035] The second element has a function of emitting light of the same color as the light emitted by the first element. The first pixel includes a color conversion layer, and the color conversion layer has a function of converting the color of the light emitted by the first element into a different color . .

[0036] Thereby, the second element can be formed in the same process as the first element. Or, the second Using the pixel of 1, a color different from that of the second pixel can be displayed. As a result, convenience , a novel functional panel excellent in usability or reliability can be provided.

[0037] (8) Further, one aspect of the present invention is the above functional panel having a region.

[0038] The region includes a group of a set of pixels and another group of a set of pixels.

[0039] A group of a set of pixels is arranged in the row direction, and a group of a set of pixels includes a set of pixels. Also, one group of a set of pixels is electrically connected to the first conductive film.

[0040] Another group of a set of pixels is arranged in the column direction intersecting the row direction, and another group of a set of pixels , includes a set of pixels. Also, another group of a set of pixels is electrically connected to the second conductive film .

[0041] Thereby, image information can be supplied to a plurality of pixels. As a result, a novel functional panel excellent in convenience, usability or reliability can be provided.

[0042] (9) Further, one aspect of the present invention is a display device having a control unit and the above functional panel.

[0043] The control unit is supplied with image information and control information, the control unit generates information based on the image information , the control unit generates a control signal based on the control information, and the control unit supplies the information and the control signal.

[0044] The functional panel is supplied with information and a control signal, and a set of pixels displays based on the information.

[0045] This allows the first element to display image information. As a result, convenience and It is possible to provide a novel display device having excellent usability and reliability.

[0046] (10) Another embodiment of the present invention is an input / output device including an input unit and a display unit.

[0047] The display unit includes the above-mentioned functional panel. The input unit includes a detection area. The detection region has an area overlapping a set of pixels.

[0048] As a result, while the image information is being displayed using the display unit, the area overlapping the display unit and the adjacent area can be easily viewed. Or, a finger or other object placed close to the display can be used as a pointer to indicate the position. Alternatively, the location information can be associated with the image information to be displayed on the display unit. As a result, a novel input / output device with excellent convenience, usefulness, and reliability can be provided. can be provided.

[0049] (11) Another embodiment of the present invention is a data processing device including an arithmetic device and an input / output device. be.

[0050] The computing device is provided with input information or sensed information, and the computing device performs a process based on the input information or sensed information. Based on the control information and image information, the computing device provides the control information and image information. do.

[0051] The input / output device provides input information and sensing information, and the input / output device provides control information and image information. The input / output device includes a display unit, an input unit, and a detection unit.

[0052] The display unit includes the above-mentioned functional panel, and displays image information based on the control information and inputs the image information. The section generates input information. Also, the detection section generates detection information.

[0053] Thereby, control information can be generated based on the input information or the detection information. Also, image information can be displayed based on the input information or the detection information. As a result, a novel information processing apparatus excellent in convenience, usefulness, or reliability can be provided.

[0054] (12) Further, one aspect of the present invention is an information processing apparatus including one or more of a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, an audio input device, a gaze input device, a posture detection device, and the above-described function panel.

[0055] Thereby, image information or control information can be generated by the arithmetic unit based on information supplied using various input devices. As a result, a novel information processing apparatus excellent in convenience, usefulness, or reliability can be provided.

[0056] In the drawings attached to this specification, components are classified by function and shown as independent blocks in a block diagram, but in actuality, it is difficult to completely separate components by function, and one component may be related to multiple functions.

[0057] In this specification, the source and drain of a transistor are interchanged in their naming depending on the polarity of the transistor and the level of the potential applied to each terminal. Generally, in an n-channel type transistor, the terminal to which a low potential is applied is called the source, and the terminal to which a high potential is applied is called the drain. Also, in a p-channel type transistor, the terminal to which a low potential is applied is called the drain, and the terminal to which a high potential is applied is called the source. The terminal that emits is called the drain, and the terminal to which a high potential is applied is called the source. In this specification for convenience, assuming that the source and the drain are fixed, there may be cases where the connection relationship of the transistor is explained. However, in reality, the names of the source and the drain are interchanged according to the above potential relationship.

[0058] In this specification, the source of the transistor means a source region that is a part of the semiconductor film functioning as an active layer, or a source electrode connected to the semiconductor film. Similarly, the drain of the transistor means a drain region that is a part of the semiconductor film, or a drain electrode connected to the semiconductor film. Also, the gate means a gate electrode. In this specification, the state where transistors are connected in series means, for example, a state where only one of the source or the drain of the first transistor is connected to only one of the source or the drain of the second transistor. Also, the state where transistors are connected in parallel means a state where one of the source or the drain of the first transistor is connected to one of the source or the drain of the second transistor, and the other of the source or the drain of the first transistor is connected to the other of the source or the drain of the second transistor. In this specification, connection means electrical connection, corresponding to a state where current, voltage, or potential can be supplied or transmitted. Therefore, the connected state does not necessarily mean a directly connected state, but via circuit elements such as wiring, resistors, diodes, and transistors so that current, voltage, or potential can be supplied or transmitted.

[0059]

[0060] ​​​​​​​​​​​​ A state in which components are connected in series is also included in this scope.

[0061] Even when components that are independent on a circuit diagram are connected in the present specification in actuality, for example, when a part of a wiring functions as an electrode, one conductive film may have the functions of a plurality of components. In the present specification, connection includes such a case where one conductive film has the functions of a plurality of components, and is also included in this scope.

[0062] Also, in the present specification, one of the first electrode or the second electrode of a transistor refers to the source electrode, and the other refers to the drain electrode.

Advantages of the Invention

[0063] According to one aspect of the present invention, a novel functional panel excellent in convenience, utility, or reliability can be provided Or, a novel display device excellent in convenience, utility, or reliability can be provided Or, a novel input / output device excellent in convenience, utility, or reliability can be provided Or, a novel information processing device excellent in convenience, utility, or reliability can be provided Or, a novel functional panel, a novel display device, a novel input / output device, a novel information processing device, or a novel semiconductor device can be provided.

[0064] Note that the description of these effects does not prevent the existence of other effects. Note that one aspect of the present invention does not necessarily have to have all of these effects. Note that other effects will be obvious from the description in the specification, drawings, claims, etc., and it is possible to extract these other effects from the description in the specification, drawings , claims, etc.

Brief Description of the Drawings

[0065]

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[0066] The function panel of one aspect of the present invention has a first pixel, and the first pixel includes a first element, a color conversion layer, and and a first functional layer. The first element sandwiches the first functional layer between itself and the color conversion layer, and the first element has a function of emitting light, and the first element contains gallium nitride. The color conversion layer has a function of converting the color of the light emitted by the first element into a different color. The first functional layer is a first insulating film and a pixel circuit, the first insulating film defining an area between the pixel circuit and the first element The pixel circuit includes a first transistor, and the first insulating film includes an opening. the first transistor includes a first oxide semiconductor film, and the first transistor has a first oxide semiconductor film in an opening. The electrode is electrically connected to the electrode.

[0067] This allows the pixel circuit to be arranged over the first element. The ratio of the area of ​​the first element to the area of ​​the first pixel can be increased. It is possible to obtain high brightness while suppressing the current density. In comparison with a configuration using an organic compound, the reliability can be improved. The current leaking from the first transistor can be suppressed. In addition, the operating characteristics of the pixel circuits are less likely to be distributed, and display unevenness can be suppressed. As a result, a novel device having excellent convenience, usefulness, and reliability can be obtained. A functional panel may be provided.

[0068] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. The present invention should not be construed as being limited to the contents described below. The same reference numerals are used in different drawings to indicate the same parts or parts having similar functions. A repeated explanation thereof will be omitted.

[0069] (Embodiment 1) In this embodiment, the configuration of the function panel according to one aspect of the present invention will be described with reference to FIGS. 1 to 6. while explaining.

[0070] FIG. 1(A) is a block diagram of a function panel according to one aspect of the present invention, and FIGS. 1(B) and 1( C) are diagrams for explaining a part of FIG. 1(A).

[0071] FIG. 2 is a diagram for explaining the configuration of the function panel according to one aspect of the present invention, and is a diagram for explaining a part of FIG. 1(A). for explaining.

[0072] FIG. 3 is a circuit diagram of a pixel circuit 530G(i,j) that can be used in the function panel according to one aspect of the present invention. circuit diagram.

[0073] FIG. 4(A) is a diagram for explaining the configuration of the function panel according to one aspect of the present invention, and is a sectional view taken along the cutting lines X1-X2, X3-X4, X9-X10 and a set of pixels 703(i,j) in FIG. 1(A). Further, FIG. 4(B) is a diagram for explaining the configuration of the function panel according to one aspect of the present invention different from FIG. 4(A). sectional view. Also, FIG. 4(B) is a diagram for explaining the configuration of the function panel according to one aspect of the present invention different from FIG. 4(A). configuration for explanation. configuration for explanation.

[0074] FIG. 5(A) is a diagram for explaining the configuration of the function panel according to one aspect of the present invention, and is a sectional view of the pixel 702G(i,j) shown in FIG. 1(B). FIG. 5(B) is a sectional view for explaining a part of FIG. 5(A). sectional view. FIG. 5(B) is a sectional view for explaining a part of FIG. 5(A). diagram for explanation.

[0075] FIG. 6(A) is a diagram for explaining the configuration of the function panel according to one aspect of the present invention, and is a sectional view taken along the cutting lines X1-X2 and X3-X4 in FIG. 1(A). FIG. 6(B) is a diagram for explaining a part of FIG. 6(A). sectional view. FIG. 6(B) is a diagram for explaining a part of FIG. 6(A). for explanation.

[0076] Note that in this specification, variables taking values of one or more integers may be used as symbols. For example, If a variable p that takes an integer value of 1 or more (p) is included, it may be used as part of a code that specifies any one of up to p components. Also, for example, (m,n) including a variable m and a variable n that take integer values of 1 or more may be used as part of a code that specifies any one of up to m×n components. In some cases, a variable m and a variable n that take integer values of 1 or more are used as part of a code that specifies any one of up to m×n components. For example, (m,n) including a variable m and a variable n that take integer values of 1 or more may be used as part of a code that specifies any one of up to m×n components.

[0077] <Configuration Example 1 of Function Panel 700> The function panel 700 described in this embodiment has pixels 702G(i,j) (see FIGS. 1(A) and 1(B)). (See FIGS. 1(A) and 1(B)).

[0078] 《Configuration Example 1 of Pixel 702G(i,j)》 Pixel 702G(i,j) includes element 550G(i,j) and functional layer 520 (see FIGS. 1(C) and 5(A)). (See FIGS. 1(C) and 5(A)).

[0079] 《Configuration Example 1 of Element 550G(i,j)》 Element 550G(i,j) has a function of emitting light, and element 550G(i,j) includes electrode 551(i,j), electrode 552, and layer 553 containing a light-emitting material (see FIG. 5(A)). (See FIG. 5(A)). For example, a light-emitting diode can be used as element 550G(i,j). Specifically, a vertical light-emitting diode can be used as element 550G(i,j). Also, a light-emitting diode that emits blue light can be used as element 550G(i,j).

[0080] The layer 553 containing a light-emitting material has a region sandwiched between the electrode 551(i,j) and the electrode 552, and the layer 553 containing a light-emitting material contains gallium nitride.

[0081] 《Configuration Example 1 of Functional Layer 520》 Functional layer 520 includes insulating film 501 and pixel circuit 530G(i,j) (see FIG. 4(A)). ​​​​​, see FIGS. 4(B) and 5(A)). The functional layer 520 includes, for example, a transistor M21 used for the pixel circuit 530G(i ,j) (see FIGS. 3 and 5(A)).

[0082] 《Configuration Example 1 of Insulating Film 501》 The insulating film 501 is provided with a region sandwiched between the pixel circuit 530G(i,j) and the element 550G(i,j), and the insulating film 501 is provided with an opening 591G(i,j).

[0083] 《Configuration Example of Pixel Circuit 530G(i,j)》 The pixel circuit 530G(i,j) includes a transistor M21 (see FIGS. 3 and 5(A) ). The transistor M21 is electrically connected to the electrode 551(i,j) at the opening 591G. Note that the transistor M21 includes an oxide semiconductor film. For example, the conductive film 51 2A electrically connects the transistor M21 and the electrode 551(i,j). Also, the conductive film 512B electrically connects the transistor M21 and the conductive film ANO (see FIG. 3 ).

[0084] Thereby, the pixel circuit 530G(i,j) can be arranged so as to overlap the element 550G(i,j). Or, the ratio of the area of the element 550G(i,j) to the area of the pixel 702G(i,j) can be increased. Or, high luminance can be obtained while suppressing the current density flowing through the element 550G(i,j). Or, the reliability can be improved as compared with a configuration using an organic compound for the layer 553 containing a light-emitting material. Or, the current leaking from the transistor M21 in the off state can be suppressed. Or, the distribution hardly occurs in the operating characteristics of the transistor, and display unevenness can be suppressed. Or, the pixel circuit ​​​​​​​​The operating characteristics of 530G(i,j) can be stabilized. As a result, a novel functional panel with excellent convenience, usefulness, and reliability can be provided.

[0085] 《Configuration Example 2 of Insulating Film 501》 The insulating film 501 includes an insulating film 501B and an insulating film 501C. The insulating film 501B has a region sandwiching the insulating film 501C between it and the transistor M21, and the insulating film 501B contains silicon and oxygen. Also, the insulating film 501C contains silicon and nitrogen.

[0086] Thereby, the diffusion of impurities that cause malfunctions in the operation into the transistor M21 can be suppressed. Or, the diffusion of impurities such as water or hydrogen into the transistor M21 can be suppressed. As a result, a novel functional panel with excellent convenience, usefulness, or reliability can be provided.

[0087] <Configuration Example 2 of Functional Panel 700> The functional panel described in this embodiment has a set of pixels 703(i,j).

[0088] 《Configuration Example 1 of a Set of Pixels 703(i,j)》 A set of pixels 703(i,j) includes a pixel 702G(i,j) and a pixel 702B(i,j) (see Fig. 1(B)). The pixel 702B(i,j) includes an element 550B(i,j).

[0089] The insulating film 501 includes an insulating film 501A, and the insulating film 501A has a function of separating the element 550B(i,j) from the element 550G(i,j) (see Fig. 5(A)). Specifically, it has a function of separating the light-emitting layer 553EM from adjacent elements.

[0090] This can suppress the influence of the operation of element 550G(i,j) on the operation of element 550B(i,j). Specifically, it is possible to suppress the crosstalk phenomenon in which element 550B(i,j) operates unintentionally due to the operation of element 550G(i,j). Or, element 550B(i,j) can be arranged closer to element 550G(i,j). Or, the ratio of the area of element 550G(i,j) to the area of pixel 702G(i,j) and the ratio of the area of element 550B(i,j) to the area of pixel 702B(i,j) can be increased. Or, the aperture ratio of pixel 702G(i,j) can be improved. As a result, it is possible to provide a novel functional panel excellent in convenience, usefulness, or reliability. Or, element 550B(i,j) can be arranged closer to element 550G(i,j). Or, the ratio of the area of element 550G(i,j) to the area of pixel 702G(i,j) and the ratio of the area of element 550B(i,j) to the area of pixel 702B(i,j) can be increased. Or, the ratio of the area of element 550G(i,j) to the area of pixel 702G(i,j) and the ratio of the area of element 550B(i,j) to the area of pixel 702B(i,j) can be increased. Or, the aperture ratio of pixel 702G(i,j) can be improved. As a result, it is possible to provide a novel functional panel excellent in convenience, usefulness, or reliability. Or, the aperture ratio of pixel 702G(i,j) can be improved. As a result, it is possible to provide a novel functional panel excellent in convenience, usefulness, or reliability. As a result, it is possible to provide a novel functional panel excellent in convenience, usefulness, or reliability.

[0091] In addition, the functional panel 700 includes a conductive film G1(i), a conductive film G2(i), a conductive film S1g(j), a conductive film S2g(j), a conductive film ANO, and a conductive film VCOM2 (see FIG. 3). In addition, the functional panel 700 includes a conductive film G1(i), a conductive film G2(i), a conductive film S1g(j), a conductive film S2g(j), a conductive film ANO, and a conductive film VCOM2 (see FIG. 3). .

[0092] Note that, for example, the conductive film G1(i) is supplied with a first selection signal, the conductive film G2(i) is supplied with a second selection signal, the conductive film S1g(j) is supplied with an image signal, and the conductive film S2g(j) is supplied with a control signal. Note that, for example, the conductive film G1(i) is supplied with a first selection signal, the conductive film G2(i) is supplied with a second selection signal, the conductive film S1g(j) is supplied with an image signal, and the conductive film S2g(j) is supplied with a control signal. Note that, for example, the conductive film G1(i) is supplied with a first selection signal, the conductive film G2(i) is supplied with a second selection signal, the conductive film S1g(j) is supplied with an image signal, and the conductive film S2g(j) is supplied with a control signal.

[0093] <<Configuration Example 2 of a Set of Pixels 703(i,j)>> A set of pixels 703(i,j) includes a pixel 702G(i,j) (see FIG. 1(B)). The pixel 702G(i,j) includes a pixel circuit 530G(i,j) and an element 550G(i,j) (see FIG. 1(C)). A set of pixels 703(i,j) includes a pixel 702G(i,j) (see FIG. 1(B)). The pixel 702G(i,j) includes a pixel circuit 530G(i,j) and an element 550G(i,j) (see FIG. 1(C)). A set of pixels 703(i,j) includes a pixel 702G(i,j) (see FIG. 1(B)). The pixel 702G(i,j) includes a pixel circuit 530G(i,j) and an element 550G(i,j) (see FIG. 1(C)).

[0094] <<Configuration Example 1 of Pixel Circuit 530G(i,j)>> The pixel circuit 530G(i,j) is supplied with a first selection signal, and the pixel circuit 530G(i,j) acquires an image signal based on the first selection signal. For example, using the conductive film G1(i) the first selection signal can be supplied (see FIG. 3). Alternatively, the conductive film S1g(j) can be used to supply the image signal. Note that the operation of supplying the first selection signal and causing the pixel circuit 530G(i,j) to acquire the image signal can be referred to as "writing".

[0095] 《Configuration Example 2 of Pixel Circuit 530G(i,j)》 The pixel circuit 530G(i,j) includes a switch SW21, a switch SW22, a transistor M 21, a capacitor C21, and a node N21 (see FIG. 3). Also, the pixel circuit 530G( (i,j) includes a node N22, a capacitor C22, and a switch SW23.

[0096] The transistor M21 includes a gate electrode electrically connected to the node N21, a first electrode electrically connected to the element 550G (i,j), and a second electrode electrically connected to the conductive film ANO.

[0097] The switch SW21 includes a first terminal electrically connected to the node N21, a second terminal electrically connected to the conductive film S1g( j), and has a function of controlling the conduction state or non-conduction state based on the potential of the conductive film G1(i).

[0098] The switch SW22 includes a first terminal electrically connected to the conductive film S2g(j), and has a function of controlling the conduction state or non-conduction state based on the potential of the conductive film G 2(i).

[0099] The capacitor C21 includes a conductive film electrically connected to the node N21 and a second ​It includes a conductive film that is electrically connected to an electrode.

[0100] As a result, the image signal can be stored in the node N21. Or, the potential of the node N21 can be changed using the switch SW22. Or, the intensity of the light emitted by the element 550G(i ,j) can be controlled using the potential of the node N21. As a result, a novel functional panel with excellent convenience or reliability can be provided.

[0101] 《Configuration Example 1 of Element 550G(i,j)》 The element 550G(i,j) is electrically connected to the pixel circuit 530G(i,j) (see FIGS. 2 and 3). Also, the element 550G(i,j) includes an electrode 551G(i,j) that is electrically connected to the pixel circuit 530G(i,j) and an electrode 5 52 that is electrically connected to the conductive film VCOM2 (see FIGS. 3 and 5(A)). Note that the element 550G(i,j) has a function of operating based on the potential of the node N21. Based on the potential of the node N21.

[0102] Instead of the light-emitting diode, for example, an organic electroluminescence element or a QDLE D (Quantum Dot LED), etc. can be used for the element 550G(i,j). It is possible.

[0103] 《Configuration Example 3 of a Set of Pixels 703(i,j)》 A plurality of pixels can be used for a set of pixels 703(i,j). For example, a plurality of pixels that display colors with mutually different hues can be used. Note that each of the plurality of pixels can be referred to as a sub-pixel. Or, a plurality of sub-pixels can be grouped together and referred to as a pixel. It can be rephrased. It can be rephrased.

[0104] As a result, the colors displayed by the plurality of pixels can be additive mixed colors. Or, a color having a hue that cannot be displayed by an individual pixel can be displayed.

[0105] Specifically, a pixel 702B(i, j) that displays blue, a pixel 702G(i , j) that displays green, and a pixel 702R(i, j) that displays red can be used as a set of pixels 703(i, j). Further, the pixel 702B(i, j), the pixel 702G(i, j), and the pixel 702R(i, j) can each be referred to as a sub-pixel (see FIG. 1(B)).

[0106] Further, for example, a pixel that displays white or the like can be added to the above set and used for the pixel 703(i, j). Also, a pixel that displays cyan, a pixel that displays magenta, and a pixel that displays yellow can be used as a set of pixels 703(i, j).

[0107] Further, for example, a pixel that emits infrared rays can be added to the above set and used for a set of pixels 703(i, j ). Specifically, a pixel that emits light including light having a wavelength of 650 nm or more and 1000 nm or less can be used as a set of pixels 703(i, j).

[0108] <Configuration Example 3 of Function Panel 700> The function panel described in this embodiment has a drive circuit GD (see FIG. 1(A)). Also has a drive circuit SD.

[0109] <Configuration Example of Drive Circuit GD> The drive circuit GD has a function of supplying a first selection signal and a second selection signal. For example , the drive circuit GD is electrically connected to the conductive film G1(i) and supplies the first selection signal, and the conductive It is electrically connected to the film G2(i) and supplies a second selection signal.

[0110] 《Configuration Example of Driving Circuit SD》 The driving circuit SD has a function of supplying an image signal and a control signal, and the control signal includes a first level and a second level. For example, the driving circuit SD is electrically connected to the conductive film S1g(j) and supplies an image signal, and is electrically connected to the conductive film S2g(j) and supplies a control signal.

[0111] 《Configuration Example 2 of Functional Layer 520》 The functional layer 520 includes a driving circuit GD (see FIGS. 4 and 6(A)). The functional layer 520 includes, for example, a transistor MD used for the driving circuit GD.

[0112] 《Configuration Example 1 of Driving Circuit GD》 The driving circuit GD includes a transistor MD, and the transistor MD includes an oxide semiconductor film, and the oxide semiconductor film includes elements included in the oxide semiconductor film included in the transistor M21.

[0113] For example, a semiconductor film having the same composition as the semiconductor film used for the transistor M21 can be used for the transistor MD.

[0114] Thereby, in the process of forming the semiconductor film of the transistor included in the pixel circuit 530G(i,j), the semiconductor film of the transistor included in the driving circuit GD can be formed. Moreover, the manufacturing process of the functional panel can be simplified. As a result, a novel functional panel excellent in convenience, usefulness, and reliability can be provided.

[0115] 《Configuration Example of Transistor》 The functional layer 520 includes a bottom-gate type transistor or a top-gate type transistor, etc. ​It can be used for specifically, a transistor can be used as a switch.

[0116] The transistor includes a semiconductor film 508, a conductive film 504, a conductive film 507A, and a conductive film 507B (see Fig. 5(B)).

[0117] The semiconductor film 508 includes a region 508A electrically connected to the conductive film 507A and a region 508B electrically connected to the conductive film 507B. The semiconductor film 508 includes a region 508C between the region 508A and the region 508B.

[0118] The conductive film 504 includes a region overlapping with the region 508C, and the conductive film 504 has the function of a gate electrode .

[0119] The insulating film 506 includes a region sandwiched between the semiconductor film 508 and the conductive film 504. The insulating film 506 has the function of a gate insulating film.

[0120] The conductive film 507A has one of the functions of a source electrode or a drain electrode, and the conductive film 50 7B has the other of the functions of a source electrode or a drain electrode.

[0121] Also, the conductive film 524 can be used for the transistor. The conductive film 524 includes a region sandwiching the semiconductor film 508 between it and the conductive film 50 4. The conductive film 524 has the function of a second gate electrode .

[0122] In addition, in the step of forming the semiconductor film used for the transistor of the pixel circuit, the semiconductor film used for the transistor of the driving circuit can be formed.

[0123] 《Configuration Example 1 of Semiconductor Film 508》 For example, a semiconductor containing a Group 14 element can be used for the semiconductor film 508. Specifically, , a semiconductor containing silicon can be used for the semiconductor film 508.

[0124] [Hydrogenated amorphous silicon] For example, hydrogenated amorphous silicon can be used for the semiconductor film 508. Or, microcrystalline silicon or the like can be used for the semiconductor film 508. Thereby, for example, compared with a functional panel using polysilicon for the semiconductor film 508, a functional panel with less display unevenness can be provided . Or, it is easy to increase the size of the functional panel.

[0125] [Polysilicon] For example, polysilicon can be used for the semiconductor film 508. Thereby, for example, compared with a transistor using hydrogenated amorphous silicon for the semiconductor film 508, the field-effect mobility of the transistor can be increased . Or, for example, compared with a transistor using hydrogenated amorphous silicon for the semiconductor film 508, the driving ability can be enhanced. Or, for example, compared with a transistor using hydrogenated amorphous silicon for the semiconductor film 508, the aperture ratio of the pixel can be improved.

[0126] Or, for example, compared with a transistor using hydrogenated amorphous silicon for the semiconductor film 508, the reliability of the transistor can be enhanced.

[0127] Or, the temperature required for manufacturing the transistor can be reduced compared with that of a transistor using, for example, single-crystalline silicon .

[0128] Or, the semiconductor film used for the transistors in the drive circuit can be the same as that used for the transistors in the pixel circuit It can be formed in the same process as the semiconductor film. Or, it can be formed on the same substrate as the substrate on which the pixel circuit is formed. Or, the number of components constituting the electronic device can be reduced.

[0129] 《Configuration Example 2 of Semiconductor Film 508》 For example, a metal oxide can be used for the semiconductor film 508. Thereby, compared with a pixel circuit using a transistor using amorphous silicon as the semiconductor film, the time during which the pixel circuit can hold the image signal can be lengthened. Specifically, while suppressing the occurrence of flicker, the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute. As a result,

[0130] the fatigue accumulated by the user of the information processing apparatus can be reduced. Also, the power consumption associated with driving can be reduced. Or, for example, a functional panel with less display unevenness can be provided than a functional panel using polysilicon for the semiconductor film 508. Or,

[0131] the duty ratio can be controlled to, for example, 50% or less to drive the element 550G(i,j). Or, for example, a smart glass or a head-mounted display can be provided.

[0132] For example, a transistor using an oxide semiconductor can be used. Specifically, In particular, a transistor smaller than that used in the conventional semiconductor device can be used. A transistor using a conductor as a semiconductor film can be used as a switch, etc. , for a longer time than circuits that use amorphous silicon transistors as switches. The potential of the floating node can be maintained.

[0133] For example, a 25 nm thick film containing indium, gallium and zinc is applied to the semiconductor film 508. It can be used.

[0134] This makes it possible to suppress display flickering and reduce power consumption. Or, you can display fast-moving video smoothly. Or, you can display rich hierarchical layers. As a result, new products that are convenient, useful, and reliable can be displayed. It is possible to provide a new functional panel.

[0135] Configuration example 3 of semiconductor film 508 For example, compound semiconductors can be used as the semiconductors of transistors. A semiconductor containing arsenic can be used.

[0136] For example, organic semiconductors can be used as the semiconductor of transistors. Organic semiconductors including cesene or graphene can be used for the semiconductor film.

[0137] <Capacity configuration example> The capacitor includes a first conductive film, another conductive film, and an insulating film. It has a region sandwiched between other conductive films.

[0138] For example, a conductive film used for a source electrode or a drain electrode of a transistor and a gate electrode The conductive film to be used and the insulating film to be used for the gate insulating film can be used as a capacitor.

[0139] 《Configuration Example 2 of Functional Layer 520》 The functional layer 520 includes an insulating film 521, an insulating film 518, an insulating film 516, an insulating film 506, and an insulating film 501C, etc. (see FIGS. 5(A) and 5(B)).

[0140] The insulating film 521 includes a region that sandwiches the pixel circuit 530G(i,j) between the element 550G(i,j). region.

[0141] The insulating film 518 includes a region sandwiched between the insulating film 521 and the insulating film 501C.

[0142] The insulating film 516 includes a region sandwiched between the insulating film 518 and the insulating film 501C.

[0143] The insulating film 506 includes a region sandwiched between the insulating film 516 and the insulating film 501C.

[0144] [Insulating Film 521] For example, an insulating inorganic material, an insulating organic material, or an insulating composite material containing an inorganic material and an organic material can be used for the insulating film 521.

[0145] Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, etc., or a laminate material formed by laminating a plurality of these selected from them can be used for the insulating film 521.

[0146] For example, a film containing a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, etc. or a laminate material formed by laminating a plurality of these selected from them can be used for the insulating film 521. The silicon nitride film is a dense film and is excellent in the function of suppressing the diffusion of impurities. excellent.

[0147] For example, insulating films can be made of polyimide, polysiloxane, or composite materials of these and inorganic materials. It can be used for 521. By the way, polyimide has excellent properties compared to other organic materials in terms of thermal stability, insulation, toughness, low dielectric constant, low thermal expansion rate, chemical resistance, etc. Therefore, polyimide can be particularly suitably used for the insulating film 521 and the like. However, one aspect of the present invention is not limited to this. As the insulating film 521, inorganic materials such as silicon oxide, silicon nitride, and aluminum oxide may be used. By using an inorganic material as the insulating film 521, the reliability of the transistor M21 can be improved.

[0148] Also, the insulating film 521 may be formed using a photosensitive material. Specifically, a film formed using a photosensitive polyimide or a photosensitive acrylic resin can be used as the insulating film 521.

[0149] Thereby, the insulating film 521 can flatten steps derived from various structures overlapping the insulating film 521, for example. Also, the insulating film 521 may have a laminated structure of the inorganic material described above and an organic material having a flattening function such as polyimide or a photosensitive acrylic resin.

[0150] [Insulating film 518] For example, materials that can be used for the insulating film 521 can be used for the insulating film 518.

[0151] For example, materials having a function of suppressing the diffusion of oxygen, hydrogen, water, alkali metals, alkaline earth metals, etc. can be used for the insulating film 518. Specifically, a nitride insulating film can be used for the insulating film 51 It can be used for 8. For example, silicon nitride, silicon oxynitride, aluminum nitride , aluminum oxynitride, etc. can be used for the insulating film 518. Thereby, the diffusion of impurities into the semiconductor film of the transistor can be suppressed.

[0152] [Insulating film 516] For example, the material that can be used for the insulating film 521 can be used for the insulating film 516.

[0153] Specifically, a film having a manufacturing method different from that of the insulating film 518 can be used for the insulating film 516 .

[0154] [Insulating film 506] For example, the material that can be used for the insulating film 521 can be used for the insulating film 506.

[0155] Specifically, a film containing a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film , a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium ium oxide film or a neodymium oxide film can be used for the insulating film 506.

[0156] [Insulating film 501D] The insulating film 501D includes a region sandwiched between the insulating film 501C and the insulating film 516.

[0157] For example, the material that can be used for the insulating film 506 can be used for the insulating film 501D .

[0158] [Insulating film 501C] For example, the material that can be used for the insulating film 521 can be used for the insulating film 501C . Specifically, a material containing silicon and oxygen can be used for the insulating film 501C. This can suppress the diffusion of impurities into the pixel circuit, the element 550G(i,j), etc. It is possible.

[0159] <<Configuration Example 3 of the Functional Layer 520>> The functional layer 520 includes a conductive film, wiring, and terminals. A material having conductivity can be used for the wiring, electrodes, terminals, conductive films, etc.

[0160] [Wiring, etc.] For example, an inorganic conductive material, an organic conductive material, a metal, or a conductive ceramic can be used for the wiring, etc. It can be used.

[0161] Specifically, a metal element selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum , tungsten, nickel, iron, cobalt, palladium, or manganese can be used for the wiring, etc. Or, an alloy containing the above-described metal element can be used for the wiring, etc. In particular, an alloy of copper and manganese is suitable for fine processing using the wet etching method. It is suitable for microfabrication using the wet etching method.

[0162] Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film or a tungsten nitride film, a titanium film, and a three-layer structure in which an aluminum film is laminated on the titanium film and a titanium film is further formed thereon can be used for the wiring, etc. It can be used for the wiring, etc. Specifically, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, etc.

[0163] Specifically, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, Conductive oxides such as zinc oxide added with gallium can be used for wirings and the like.

[0164] Specifically, a film containing graphene or graphite can be used for wirings and the like.

[0165] For example, a film containing graphene oxide is formed, and by reducing the film containing graphene oxide, a film containing graphene can be formed. Examples of the reduction method include heating and using a reducing agent.

[0166] For example, a film containing metal nanowires can be used for wirings and the like. Specifically, nanowires containing silver can be used.

[0167] Specifically, conductive polymers can be used for wirings and the like.

[0168] Note that, for example, using a conductive material, the terminal 519B can be electrically connected to the flexible printed circuit board FPC1 (see FIG. 4). Specifically, using a conductive material CP, the terminal 519B can be electrically connected to the flexible printed circuit board FPC1.

[0169] <Configuration Example 4 of the Functional Panel 700> Also, the functional panel 700 includes a base material 510, a base material 770, and a sealing material 705 (see FIG. 5 (A)). Further, the functional panel 700 includes a structure KB.

[0170] 《Base Material 510, Base Material 770》 A material having light transmissivity can be used for the base material 510 or the base material 770.

[0171] For example, a flexible material can be used for the base material 510 or the base material 770. Thus, a functional panel with flexibility can be provided.

[0172] For example, a material with a thickness of 0.7 mm or less and 0.1 mm or more can be used. Specifically a material polished to a thickness of about 0.1 mm can be used. This can reduce the weight and can be reduced.

[0173] By the way, glass substrates of the 6th generation (1500 mm × 1850 mm), 7th generation (1870 mm × 220 0 mm), 8th generation (2200 mm × 2400 mm), 9th generation (2400 mm × 280 0 mm), 10th generation (2950 mm × 3400 mm), etc. can be used as the base material 510 or also as the base material 770. Thus, a large display device can be manufactured able to.

[0174] Organic materials, inorganic materials, or composite materials such as a combination of organic and inorganic materials, etc. can be used as the base material 510 or the base material 770.

[0175] For example, inorganic materials such as glass, ceramics, and metals can be used. Specifically, non-alkali glass, soda lime glass, potassium glass, crystal glass, aluminosilicate glass glass, tempered glass, chemically strengthened glass, quartz, or sapphire, etc. can be used as the base material 510 or the base material 770. Or, aluminosilicate glass, tempered glass, chemically strengthened glass glass, or sapphire, etc. can be preferably used as the base material 510 or the base material 770 disposed closer to the user of the functional panel. This can prevent breakage or damage of the functional panel during use.

[0176] Specifically, an inorganic oxide film, an inorganic nitride film, or an inorganic oxynitride film, etc. can be used . For example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film etc. can be used. Stainless steel or aluminum can be used as the base material 510 or as the base material 770.

[0177] For example, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, etc. can be used as the base material 510 or the base material 770. Thereby, a semiconductor element can be formed on the base material 510 or the base material 770.

[0178] For example, an organic material such as a resin, a resin film, or a plastic can be used as the base material 510 or the base material 7 70. Specifically, materials containing resins having siloxane bonds such as polyester, polyolefin, polyamide ( nylon, aramid, etc.), polyimide, polycarbonate, polyurethane, acrylic resin , epoxy resin, or silicone can be used as the base material 5 10 or the base material 770. For example, resin films , resin plates, or laminated materials containing these materials can be used. Thereby, the weight can be reduced. Or, for example, the frequency of occurrence of breakage or the like due to dropping can be reduced.

[0179] Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PE N), polyethersulfone (PES), cycloolefin polymer (COP), or cycloolefin copolymer (COC), etc. can be used as the base material 510 or the base material 770.

[0180] For example, a metal plate, a thin glass plate, or a film of an inorganic material is bonded to a resin film, etc. The composite material can be used for the base material 510 or the base material 770. For example, a composite material in which fibrous or particulate metals, glass, inorganic materials, etc. are dispersed in a resin can be used for the base material 510 or the base material 770. For example, a composite material in which fibrous or particulate resins or organic materials etc. are dispersed in an inorganic material can be used for the base material 510 or the base material 770.

[0181] In addition, a single-layer material or a material in which a plurality of layers are laminated can be used for the base material 510 or the base material 770. For example, a material in which an insulating film or the like is laminated can be used. Specifically, a material in which one or a plurality of films selected from a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, etc. are laminated can be used. Thereby, for example, the diffusion of impurities contained in the base material can be prevented. Or the diffusion of impurities contained in glass or resin can be prevented. Or the diffusion of impurities permeating through the resin can be prevented.

[0182] In addition, paper or wood, etc. can be used for the base material 510 or the base material 770.

[0183] For example, a material having heat resistance to such an extent that it can withstand the heat treatment during the manufacturing process can be used for the base material 510 or the base material 770. Specifically, a material having heat resistance to the heat applied during the manufacturing process of directly forming a transistor or a capacitor, etc. can be used for the base material 510 or the base material 770. For example, an insulating film, a transistor or

[0184] a capacitor, etc. are formed on a process substrate having heat resistance to the heat applied during the manufacturing process, and the formed insulating film, transistor or capacitor, etc. are, for example, the base material 51 0 or the base material 770. ​A method of transferring to 0 or the base material 770 can be used. Thereby, for example, a flexible An insulating film, a transistor, a capacitor, or the like can be formed on a substrate having

[0185] 《Sealing Material》 The sealing material 705 includes a region sandwiched between the functional layer 520 and the base material 770, and has a function of bonding the functional layer 52 0 and the base material 770 (see Fig. 5(A)). Also, the sealing material 50 5 includes a region sandwiched between the functional layer 520 and the base material 510, and has a function of bonding the functional layer 520 and the base material 510.

[0186] An inorganic material, an organic material, a composite material of an inorganic material and an organic material, or the like can be used for the sealing material 705 and the sealing material 505.

[0187] For example, an organic material such as a heat-melting resin or a curable resin can be used for the sealing material 705 and the sealing material 505.

[0188] For example, an organic material such as a reaction-curing adhesive, a photo-curing adhesive, a heat-curing adhesive, or / and an anaerobic adhesive can be used for the sealing material 705 and the sealing material 505.

[0189] Specifically, adhesives containing epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral l) resin, EVA (ethylene vinyl acetate) resin, etc. can be used for the sealing material 705 and also for the sealing material 505.

[0190] 《Structural Body KB》 The structural body KB includes a region sandwiched between the functional layer 520 and the base material 770. Also, the structure The body KB has a function of providing a predetermined gap between the functional layer 520 and the base material 770.

[0191] <Method for manufacturing the functional panel 700> The method for manufacturing the functional panel 700 includes, for example, the following 18 steps.

[0192] In the first step, an N-type clad layer 553N is formed, for example, on a sapphire substrate. Do.

[0193] In the second step, a light-emitting layer 553EM is formed on top of the N-type clad layer 553N. Do.

[0194] In the third step, a P-type clad layer 553P is formed on top of the light-emitting layer 553EM. Do.

[0195] In the fourth step, an electrode 551(i,j) is formed on top of the P-type clad layer 553P. Form.

[0196] In the fifth step, the electrode 551(i,j), the P-type clad layer 553P, and the light-emitting layer 553EM are formed into a predetermined shape using an etching method. Form.

[0197] In the sixth step, an insulating film 501A is formed so as to cover the electrode 551(i,j). Do.

[0198] In the seventh step, the insulating film 501A is formed into a predetermined shape using, for example, a chemical mechanical polishing method. Form.

[0199] In the eighth step, an insulating film 501B is formed on top of the insulating film 501A.

[0200] In the ninth step, an insulating film 501C is formed on top of the insulating film 501B.

[0201] In the 10th step, the transistor M21 and the insulating film 516 are formed on the insulating film 501C thereon.

[0202] In the 11th step, an opening including the opening 591G is formed using an etching method thereof.

[0203] In the 12th step, the transistor M21 and the electrode 551(i,j) are electrically connected.

[0204] In the 13th step, the insulating film 518 and the insulating film 521 are formed on the transistor M21 thereon.

[0205] In the 14th step, the base material 510 and the insulating film 521 are bonded together using the sealing material 505 thereof.

[0206] In the 15th step, for example, the sapphire substrate is separated from the N-type clad layer 553N . Note that in the 15th step, for example, the laser lift-off method can be used thereof.

[0207] In the 16th step, the electrode 552 is formed so as to overlap the N-type clad layer 553N thereon.

[0208] In the 17th step, the color conversion layer CC(G) is formed so as to sandwich the electrode 552 between itself and the light emitting layer 553EM thereon.

[0209] In the 18th step, the base material 770 and the color conversion layer CC(G) are bonded together using the sealing material 705 thereon.

[0210] <Configuration Example 5 of the Functional Panel 700> The functional panel 700 described in this embodiment has pixels 702G(i,j) (see Fig. 4( B) and Fig. 23(A)).

[0211] 《Configuration Example 1 of Pixel 702G(i,j)》 Pixel 702G(i,j) includes element 550G(i,j), color conversion layer CC(G), and functional layer 5 20 (see Fig. 23(A)).

[0212] 《Configuration Example 1 of Element 550G(i,j)》 Element 550G(i,j) sandwiches functional layer 520 between it and the color conversion layer CC(G), and element 550 G(i,j) has the function of emitting light, and element 550G(i,j) contains gallium nitride .

[0213] For example, a light-emitting diode can be used as element 550G(i,j). Specifically, a vertical light-emitting diode can be used as element 550G(i,j). Also, a light-emitting diode that emits blue light can be used as element 550G(i,j). Note that the N type cladding layer 553N has conductivity. Thus, the N type cladding layer 553N can electrically connect to an element adjacent to element 550G(i,j), for example, element 550B(i,j). In other words, the N type cladding layer 553N also serves as an electrode.

[0214] 《Configuration Example 1 of Color Conversion Layer CC(G)》 Color conversion layer CC(G) has the function of converting the color of the light emitted by element 550G(i,j) into a different color . For example, the light emitted by element 550G(i,j) passes through functional layer 520 and reaches the color conversion layer CC(G). Also, for example, when element 550G(i,j) emits blue light , color conversion layer CC(G) converts the blue light into, for example, green light It is possible. Note that the color conversion layer CC(G) can be formed using a photolithography method. Alternatively, for example, the structure KB is formed using a photolithography method, and the color conversion layer CC(G) is formed in the region surrounded by the structure KB using an inkjet method. This can be done.

[0215] 《Configuration Example 1 of Functional Layer 520》 The functional layer 520 includes an insulating film 501 and a pixel circuit 530G(i,j).

[0216] The insulating film 501 includes a region sandwiched between the pixel circuit 530G(i,j) and the element 550G(i,j), and the insulating film 501 includes an opening 591G.

[0217] The pixel circuit 530G(i,j) includes a transistor M21, and the transistor M21 includes an oxide semiconductor film. Also, the transistor M21 is electrically connected to the element 550G(i,j) at the opening 591G. For example, the conductive film 512A electrically connects the transistor M21 and the electrode 551(i,j) (see FIG. 23(B)). Also, the conductive film 512B electrically connects the transistor M21 and the conductive film ANO (see FIG. 3).

[0218] Note that a light shielding layer may be provided between the element 550G(i,j) and the transistor M21. Also, a material having light shielding properties can be used for the conductive film 524. By providing the light shielding layer, it is possible to prevent the light emitted from the element 550G(i,j) from irradiating the transistor M21.

[0219] Note that the present embodiment can be appropriately combined with other embodiments shown in this specification.

[0220] (Embodiment 2) In this embodiment, the configuration of the function panel according to one aspect of the present invention will be described with reference to FIGS. 16 to 20. while referring to.

[0221] FIG. 16 is a block diagram of a function panel according to one aspect of the present invention.

[0222] FIG. 17(A) is a diagram for explaining the configuration of a function panel according to one aspect of the present invention, and is a cross-sectional view along the cutting lines X1-X2, X3-X4, X9-X10 in FIG. 16 and a set of pixels 703(i,j). FIG. 17(B) is a diagram for explaining the configuration of a function panel according to one aspect of the present invention different from that in FIG. 17(A), and FIG. 17(C) is a diagram for explaining the configuration of a function panel according to one aspect of the present invention different from those in FIGS. 17(A) and 17(B). FIG. 17(C) is a diagram for explaining the configuration of a function panel according to one aspect of the present invention different from those in FIGS. 17(A) and 17(B). invention.

[0223] FIG. 18(A) is a diagram for explaining the configuration of a function panel according to one aspect of the present invention, and is a cross-sectional view of the pixel 702G(i,j) shown in FIG. 17(B). FIG. 18(B) is a cross-sectional view for explaining a part of FIG. 18(A), and FIG. 18(C) is a cross-sectional view for explaining another part of FIG. 18(A). FIG. 18(B) is a cross-sectional view for explaining a part of FIG. 18(A), and FIG. 18(C) is a cross-sectional view for explaining another part of FIG. 18(A). sectional view.

[0224] FIG. 19 is a block diagram of a function panel according to one aspect of the present invention.

[0225] FIG. 20 is a diagram for explaining the configuration of a function panel according to one aspect of the present invention, and is a cross-sectional view along the cutting lines X1- X2, X3-X4, X9-X10 in FIG. 19 and a set of pixels 703(i,j). is.

[0226] <Configuration Example 1 of Function Panel 700> The function panel 700 described in this embodiment has a function layer 520B (see FIGS. 17(A) and FIG. 18(A)).

[0227] <<Configuration Example 1 of Functional Layer 520B>> The functional layer 520B includes a contact 519gb(j), a drive circuit SD, and an insulating film 521C ( see Fig. 18(A)). The contact 519gb(j) is electrically connected to the drive circuit SD.

[0228] In addition, the functional layer 520B includes an insulating film 521D. The insulating film 521D includes a region sandwiched between the drive circuit SD and the insulating film 521C. For example, a film containing silicon and nitrogen can be used for the insulating film 521D. Thereby, the diffusion of impurities into the drive circuit SD can be suppressed . Note that such impurities may cause malfunction.

[0229] The drive circuit SD includes a transistor MD2, and the transistor MD2 includes a semiconductor containing an element of Group 14 . For example, a transistor formed on a single-crystalline silicon substrate can be used as the transistor MD 2.

[0230] The transistor MD2 includes a semiconductor film 108, a conductive film 104, a conductive film 112A, and a conductive film 1 12B (see Fig. 18(C)).

[0231] The semiconductor film 108 includes a region 108A electrically connected to the conductive film 112A and a region 108B electrically connected to the conductive film 112B. The semiconductor film 108 includes a region 108C between the regions 108A and 108B.

[0232] The conductive film 104 includes a region overlapping with the region 108C, and the conductive film 104 functions as a gate electrode .

[0233] The insulating film 106 includes a region sandwiched between the semiconductor film 108 and the conductive film 104. The insulating The film 106 has the function of a gate insulating film.

[0234] The conductive film 112A has one of the functions of a source electrode or a drain electrode, and the conductive film 11 2B has the other of the functions of a source electrode or a drain electrode.

[0235] 《Configuration Example 1 of the Functional Layer 520》 The functional layer 520 includes an insulating film 521B and a contact 519ga(j) (see Fig. 18(A) ).

[0236] The insulating film 521B includes a region sandwiched between the insulating film 521C and the insulating film 521. The insulating film 521B includes a region joined to the insulating film 521C.

[0237] For example, an insulating film containing silicon and oxygen can be used for the insulating film 521B and the insulating film 521C . Thereby, for example, the insulating film 521B and the insulating film 521C can be joined using a surface activation bonding method. Alternatively, the functional layer 520 and the functional layer 520 B can be bonded together.

[0238] The contact 519ga(j) is electrically connected to the contact 519gb(j), and the contact 519ga(j ) is electrically connected to the pixel circuit 530G(i,j).

[0239] For example, metal can be used for the contact 519ga(j) and the contact 519gb(j) . Specifically, copper or gold, etc. can be used for the contact 519ga(j) and the contact 519gb(j) .

[0240] Thereby, for example, the contact 519ga(j) and the contact 51 9gb(j) can be electrically connected using a surface activation bonding method. Alternatively, the conductive film S1g(j) can be used in the driving circuit It can be electrically connected to the SD. Or, using the drive circuit SD, for example, pixel signals can be supplied. Or, for example, a transistor using single crystal silicon in a semiconductor can be used for the drive circuit SD. Or, for example, the drive circuit SD can be arranged superposed on the pixel 702G(i,j). Or, the outer shape of the functional panel can be miniaturized to reduce the number of components. As a result, a novel functional panel excellent in convenience, utility or reliability can be provided.

[0241] <Configuration Example 2 of Functional Panel 700> Another configuration of the functional panel according to an aspect of the present invention will be described with reference to FIG. 17(B). Note that Configuration Example 2 of the functional panel is different from the functional panel described with reference to FIG. 17(A) in that the functional layer 520B includes the drive circuit GD and the functional layer 520B includes the terminal 519B. Here, the different points will be described in detail, and the above description will be applied to the parts where the same configuration can be used.

[0242] For the drive circuit GD, for example, a transistor including an element of Group 14 in a semiconductor can be used. Specifically, a transistor using single crystal silicon can be used for the drive circuit GD. Thereby, the drive circuit GD can be miniaturized. Or, the outer shape of the functional panel can be made smaller.

[0243] <Configuration Example 3 of Functional Panel 700> Another configuration of the functional panel according to an aspect of the present invention will be described with reference to FIG. 17(C). Note that Configuration Example 3 of the functional panel is different from Configuration Example 2 in that the functional layer 520B includes the drive circuit GD and the terminal The position of 519B is different from the functional panel to be described with reference to FIG. 17(A).

[0244] <Configuration Example 4 of Functional Panel 700> Another configuration of the functional panel according to an aspect of the present invention will be described with reference to FIGS. 19 and 20. Description.

[0245] Note that Configuration Example 4 of the functional panel is different from the functional panel to be described with reference to FIG. 17(A) in that the functional layer 520 includes a drive circuit DX, the functional layer 520 B includes a drive circuit DY, and the element 550B(i,j) is passively driven. The position of 519B is different from the functional panel to be described with reference to FIG. 17(A).

[0246] Note that this embodiment can be appropriately combined with other embodiments shown in this specification. .

[0247] (Embodiment 3) In this embodiment, the configuration of the functional panel according to an aspect of the present invention will be described with reference to FIGS. 5(A) and 5 (B).

[0248] <Configuration Example 1 of Functional Panel 700> The functional panel 700 has a set of pixels 703(i,j), and the set of pixels 703(i,j) includes a pixel 702G(i,j) and a pixel 702B(i,j) (see FIG. 1(B)). .

[0249] <<Configuration Example 1 of Pixel 702B(i,j)>> The pixel 702B(i,j) has a function of displaying light emitted by the element 550B(i,j). The element 550B(i,j) has a function of emitting light of the same color as the light emitted by the element 550G(i,j). For example, the elements 550B(i,j) and 550G(i,j) have a function of emitting blue light. Description.

[0250] 《Configuration Example 2 of Pixel 702G(i,j)》 Pixel 702G(i,j) includes a color conversion layer CC(G). The color conversion layer CC(G) has the function of converting the color of the light emitted by element 55 0G(i,j) into different colors.

[0251] As a result, element 550B(i,j) can be formed in the same process as element 550G(i,j). Alternatively, using pixel 702G(i,j), different colors can be displayed from pixel 702B(i,j). As a result, a novel functional panel excellent in convenience, usefulness, or reliability can be provided.

[0252] 《Configuration Example 1 of Element 550G(i,j)》 Element 550G(i,j) includes an electrode 551G(i,j), an electrode 552, and a layer 553 containing a light-emitting material (see Fig. 5(A)). Further, the layer 553 containing the light-emitting material has a region sandwiched between the electrode 551G(i,j) and the electrode 552.

[0253] For example, a mini LED can be used for element 550G(i,j). Specifically, the area of the region that emits light is 1 mm or less, preferably 50000 μm 2 or less, more preferably 2 30000 μm or less, even more preferably 10000 μm 2 or less, and even more preferably 200 μm 2 or more 2 can be used for element 550G(i,j).

[0254] Alternatively, a micro LED can be used for element 550G(i,j). Specifically, the area of the region that emits light is less than 200 μm 2 preferably 60 μm 2 or less, more preferably is 15 μm 2 or less, more preferably 5 μm 2 or less, 3 μm 2 or more of the micro LED can be used for the element 550G(i,j).

[0255] [Configuration Example 1 of Layer 553 Containing Light-Emitting Material] The layer 553 containing the light-emitting material includes, for example, a P-type cladding layer 553P, an N-type cladding layer 553N, and a light-emitting layer 553EM. The light-emitting layer 553EM includes a region sandwiched between the P-type cladding layer 553P and the N-type cladding layer 553N. Thereby, carriers can be recombined in the light-emitting layer 553EM. As a result, light emission accompanying the recombination of carriers can be obtained.

[0256] For example, a laminated material laminated to emit blue light, a laminated material laminated to emit green light, or a laminated material laminated to emit red light, etc. can be used for the pixel luminum arsenide compound, aluminum gallium indium phosphide compound, indium gallium nitride compound, etc. can be used for the pixel.

[0257] In particular, an element that emits blue light can be used for the element 550G(i,j) and the element 550B(i,j) j). Thereby, the element 550G(i,j) and the element 550B(i,

[0258] j) can be formed in the same process. Also, an element that emits ultraviolet light can be used for the element 550G(i,j) and the element 550B(i,j). A color conversion layer is disposed so as to overlap the element 550B(i,j)​​​​ can convert ultraviolet light into blue light.

[0259] 《Color conversion layer》 The color conversion layer includes a region sandwiched between the base material 770 and the element 550G(i,j).

[0260] For example, a material that emits light having a wavelength longer than the wavelength of the incident light can be used for the color conversion layer. For example, a material that absorbs blue light or ultraviolet light and converts it into and emits green light, a material that absorbs blue light or ultraviolet light and converts it into and emits red light, or a material that absorbs ultraviolet light and converts it into and emits blue light can be used for the color conversion layer. For example, a phosphor can be used for the color conversion layer. Specifically, quantum dots with a diameter of several nm can be used for the color conversion layer. Thereby, light having a spectrum with a narrow half-value width can be emitted. Also, light with high chroma can be emitted.

[0261] <Configuration example 2 of the functional panel 700> The functional panel 700 includes a functional film 770P or the like (see Fig. 5(A)).

[0262] 《Functional film 770P etc.》 The functional film 770P includes a region overlapping with the element 550G(i,j).

[0263] For example, an antireflection film, a polarizing film, a retardation film, a light diffusion film, or a condenser film or the like can be used for the functional film 770P.

[0264] For example, an antireflection film with a thickness of 1 μm or less can be used for the functional film 770P. Specifically, a laminated film in which three or more, preferably five or more, more preferably fifteen or more layers of dielectrics are laminated can be used for the functional film 770P. Thereby, the reflectance can be 0.5% or less, preferably can be suppressed to 0.08% or less.

[0265] For example, a circularly polarized film can be used for the functional film 770P.

[0266] In addition, an antistatic film that suppresses dust adhesion, a water-repellent film that makes it difficult for dirt to adhere, an oil-repellent film that makes it difficult for dirt to adhere, an antireflection film (anti-reflection film), a non-gloss treatment film ( anti-glare film), a hard coat film that suppresses the occurrence of scratches during use, a self-healing film that repairs the generated scratches, etc. can be used for the functional film 770P.

[0267] Note that this embodiment can be appropriately combined with other embodiments shown in this specification. .

[0268] (Embodiment 4) In this embodiment, the configuration of the functional panel according to one aspect of the present invention will be described with reference to FIG. 7. .

[0269] FIG. 7 is a block diagram for explaining the configuration of the functional panel according to one aspect of the present invention.

[0270] <Configuration Example 1 of Functional Panel 700> The functional panel 700 described in this embodiment has a region 231 (see FIG. 7).

[0271] <<Configuration Example 1 of Region 231>> The region 231 includes a group of a set of pixels 703(i,1) to a set of pixels 703(i,n) and also another group of a set of pixels 703(1,j) to a set of pixels 703(m,j). In addition, the region 231 includes a conductive film G1(i) and a conductive film S1g(j).

[0272] ​​A set of pixels 703(i, 1) to a set of pixels 703(i, n) in a group are arranged in the row direction (the direction indicated by arrow R1 in the figure), and the set of pixels 703(i, 1) to the set of pixels 7 03(i, n) in a group includes a set of pixels 703(i, j). Also, a set of pixels 703(i, 1) to a set of pixels 703(i, n) in a group is electrically connected to the conductive film G

[0273] 1(i). Also, a set of pixels 703(i, 1) to a set of pixels 703(i, n) in a group is electrically connected to the conductive film G2(i). Also, a set of pixels 703(i, 1) to a set of pixels 703(i, n) in a group is electrically connected to the conductive film G2(i). Another set of pixels 703(1, j) to a set of pixels 703(m, j) in another group is arranged in the column direction (the direction indicated by arrow C1 in the figure) intersecting the row direction, and the other set of pixels 703(

[0274] 1, j) to a set of pixels 703(m, j) in another group includes a set of pixels 703(i, j). Also, another set of pixels 703(1, j) to a set of pixels 703(m, j) in another group is electrically connected to the conductive film S1g(j). Also, another set of pixels 703(1, j) to a set of pixels 703(m, j) in another group is electrically connected to the conductive film S2g(j).

[0275]

[0276]

[0276] As a result, image information can be supplied to a plurality of pixels. Or, image information can be acquired from a plurality of pixels. As a result, a novel functional panel excellent in convenience, usefulness, or reliability can be provided.

[0277] <<Configuration Example 2 of Region 231>> Region 231 includes, for example, a plurality of sets of pixels of 600 or more per inch. Note that the plurality of sets of pixels includes a set of pixels 703(i, j). Preferably, per inch Comprising 1000 or more, more preferably 3000 or more per inch, and even more preferably 6000 or more per inch of a set of pixels. Thereby, for example, the screen-door effect can be reduced.

[0278] 《Configuration Example 3 of Region 231》 Region 231 comprises a plurality of sets of pixels arranged in a matrix. For example, Region 231 comprises 7600 or more sets of pixels in the row direction, and Region 231 comprises 4300 or more sets of pixels in the column direction. Specifically, it comprises 7680 sets of pixels in the row direction and 4320 sets of pixels in the column direction.

[0279] Thereby, a detailed image can be displayed. As a result, a new functional panel excellent in convenience or reliability can be provided.

[0280] Note that this embodiment can be appropriately combined with other embodiments shown in this specification.

[0281] (Embodiment 5) In this embodiment, the configuration of a display device according to an aspect of the present invention will be described with reference to FIG. 8.

[0282] FIG. 8(A) is a block diagram of a display device according to an aspect of the present invention, and FIGS. 8(B) to 8(D) are perspective views for explaining the appearance of a display device according to an aspect of the present invention.

[0283] <Configuration Example of Display Device> The display device described in this embodiment has a control unit 238 and a functional panel 700 ( see FIG. 8(A)).

[0284] 《Configuration Example 1 of Control Unit 238》 The control unit 238 is supplied with the image information VI and the control information CI. For example, a clock signal or a timing signal can be used as the control information CI. For example, a clock signal or a timing signal can be used as the control information CI.

[0285] The control unit 238 generates information based on the image information VI, and the control unit 238 generates a control signal based on the control information CI. Also, the control unit 238 supplies the information and the control signal. For example, the information includes gradations of 8 bits or more, preferably 12 bits or more. Also, for example, a clock signal or a start pulse used for a drive circuit can be used as the control signal.

[0286] For example, the information includes gradations of 8 bits or more, preferably 12 bits or more. Also, for example, a clock signal or a start pulse used for a drive circuit can be used as the control signal. For example, a clock signal or a start pulse used for a drive circuit can be used as the control signal. For example, a clock signal or a start pulse used for a drive circuit can be used as the control signal.

[0287] 《Configuration Example 2 of Control Unit 238》 For example, the expansion circuit 234 and the image processing circuit 235 can be used in the control unit 238.

[0288] 《Expansion Circuit 234》 The expansion circuit 234 has a function of expanding the image information VI supplied in a compressed state. The expansion circuit 234 includes a storage unit. The storage unit has a function of storing, for example, the expanded image information. The expansion circuit 234 includes a storage unit. The storage unit has a function of storing, for example, the expanded image information.

[0289] 《Image Processing Circuit 235》 The image processing circuit 235 includes, for example, a storage area. The storage area has a function of storing, for example, the information included in the image information VI. The image processing circuit 235 includes, for example, a storage area. The storage area has a function of storing, for example, the information included in the image information VI.

[0290] The image processing circuit 235 has, for example, a function of correcting the image information VI based on a predetermined characteristic curve to generate information and a function of supplying the information. The image processing circuit 235 has, for example, a function of correcting the image information VI based on a predetermined characteristic curve to generate information and a function of supplying the information.

[0291] 《Configuration Example 1 of Function Panel 700》 ​The function panel 700 is supplied with information and control signals. For example, the function panel 700 described in any one of Embodiments 1 to Embodiment 4 can be used.

[0292] 《Configuration Example 3 of Pixel 703(i,j)》 The pixel 703(i,j) is displayed based on information.

[0293] Thereby, the image information VI can be displayed using the element 550G(i,j). As a result, a novel display device excellent in convenience, usefulness, or reliability can be provided. Or, for example, an information device terminal (see FIG. 8(B)), a video display system (see FIG. 8(C) ), or a computer (see FIG. 8(D)) can be provided.

[0294] 《Configuration Example 2 of Function Panel 700》 For example, the function panel 700 includes a drive circuit and a control circuit.

[0295] 《Drive Circuit》 The drive circuit operates based on a control signal. By using the control signal, the operations of a plurality of drive circuits can be synchronized (see FIG. 8(A)).

[0296] For example, the drive circuit GD can be used for the function panel 700. The drive circuit GD has a function of being supplied with a control signal and supplying a first selection signal.

[0297] Also, for example, the drive circuit SD can be used for the function panel 700. The drive circuit SD is supplied with a control signal and information and can supply an image signal.

[0298] 《Control Circuit》 The control circuit has a function of generating and supplying a control signal. For example, a clock signal or a timing A timing signal or the like can be used as the control signal.

[0299] Specifically, a control circuit formed on a rigid substrate can be used in a functional panel. Alternatively, a control circuit formed on a rigid substrate may be connected to a flexible printed circuit board. It can be electrically connected to the control unit 238.

[0300] For example, the timing controller 233 can be used for the control circuit.

[0301] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. .

[0302] (Embodiment 6) In this embodiment, a configuration of an input / output device of one embodiment of the present invention will be described with reference to FIG. Reveal.

[0303] FIG. 9 is a block diagram illustrating a configuration of an input / output device of one embodiment of the present invention.

[0304] <Example 1 of I / O device configuration> The input / output device described in this embodiment has an input unit 240 and a display unit 230 (see FIG. 9).

[0305] Configuration Example 1 of Display Unit 230 The display unit 230 includes a functional panel 700. The functional panel 700 described above can be used for the display unit 230. The configuration having the input unit 240 and the display unit 230 can be referred to as a functional panel 700TP.

[0306] Configuration example 1 of the input unit 240 The input unit 240 includes a detection area 241. The input unit 240 is adjacent to the detection area 241. Detect it.

[0307] The detection area 241 includes an area overlapping with a set of pixels 703(i,j).

[0308] Thus, while displaying image information using the display unit 230, it is possible to detect an object close to the area overlapping with the display unit 230. Alternatively, a finger or the like brought close to the display unit 230 can be used as a pointer to input position information. Alternatively, the position information can be associated with the image information displayed on the display unit 230. As a result, a novel input / output device excellent in convenience, usefulness, or reliability can be provided.

[0309] 《Configuration Example 1 of Detection Area 241》 The detection area 241 includes, for example, one or more detectors.

[0310] The detection area 241 has a group of detectors 802(g,1) to 802(g,q) and another group of detectors 802(1,h) to 802(p,h). Here, g is an integer from 1 to p, h is an integer from 1 to q, and p and q are integers of 1 or more and exist.

[0311] The group of detectors 802(g,1) to 802(g,q) includes the detector 802(g,h) and is arranged in the row direction (the direction indicated by arrow R2 in the figure) and is electrically connected to the wiring CL(g). Note that the direction indicated by arrow R2 may be the same as the direction indicated by arrow R1 or may be different.

[0312] Also, the other group of detectors 802(1,h) to 802(p,h) includes the detector 802 (g,h) and is arranged in the column direction (the direction indicated by arrow C2 in the figure) intersecting the row direction, It is electrically connected to the wiring ML(h).

[0313] 《Detector》 The detector has a function of detecting a proximity pointer. For example, it can be used for a pointer such as a finger or a stylus pen. For example, a metal piece or a coil can be used for a stylus pen. It can be used.

[0314] Specifically, a capacitance proximity sensor, an electromagnetic induction proximity sensor, an optical proximity sensor, a resistive film proximity sensor, etc. can be used for the detector. It can be used for the detector.

[0315] Also, detectors of multiple methods can be used in combination. For example, a detector for detecting a finger and a detector for detecting a stylus pen can be used in combination. It can be used in combination.

[0316] Thereby, the type of the pointer can be discriminated. Or, different commands can be associated with the detection information based on the discriminated type of the pointer. Specifically, when it is discriminated that a finger is used for the pointer, the detection information can be associated with a gesture. Also, when it is discriminated that a stylus pen is used for the pointer, the detection information can be associated with a drawing process. Specifically, when it is discriminated that a finger is used for the pointer, the detection information can be associated with a gesture. Also, when it is discriminated that a stylus pen is used for the pointer, the detection information can be associated with a drawing process. It can be associated.

[0317] Specifically, a finger can be detected using a capacitance proximity sensor, a pressure sensor, or an optical proximity sensor. Or, a stylus pen can be detected using an electromagnetic induction proximity sensor or an optical proximity sensor. Or, a stylus pen can be detected using an electromagnetic induction proximity sensor or an optical proximity sensor. It can be detected.

[0318] 《Configuration Example 2 of Input Unit 240》 The input unit 240 includes an oscillation circuit OSC and a detection circuit DC (see FIG. 9).

[0319] The oscillation circuit OSC supplies a search signal to the detector 802(g,h). For example, a rectangular wave, a sawtooth wave, a triangular wave, a sine wave, etc. can be used as the search signal. The detector 802(g,h) generates and supplies a detection signal that changes based on the distance to a pointer close to the detector 802(g,h) and the search signal.

[0320] The detector 802(g,h) generates and supplies a detection signal that changes based on the distance to a pointer close to the detector 802(g,h) and the search signal. The detector 802(g,h) generates and supplies a detection signal that changes based on the distance to a pointer close to the detector 802(g,h) and the search signal.

[0321] The detection circuit DC supplies input information based on the detection signal.

[0322] As a result, the distance from the approaching pointer to the detection area 241 can be detected. Alternatively, the position where the pointer is closest within the detection area 241 can be detected.

[0323] Note that this embodiment can be appropriately combined with other embodiments shown in this specification.

[0324] (Embodiment 7) In this embodiment, the configuration of an information processing apparatus according to an aspect of the present invention will be described with reference to FIGS. 10 to 12.

[0325] FIG. 10(A) is a block diagram for explaining the configuration of an information processing apparatus according to an aspect of the present invention. FIGS. 10(B) and 10(C) are projection views for explaining an example of the appearance of the information processing apparatus. FIG. 11 is a flowchart for explaining a program according to an aspect of the present invention. FIG. 11(A) is a flowchart for explaining the main processing of a program according to an aspect of the present invention, and FIG. 11(B) is a flowchart for explaining interrupt processing.

[0326] FIG. 11 is a flowchart for explaining a program according to an aspect of the present invention. FIG. 11(A) is a flowchart for explaining the main processing of a program according to an aspect of the present invention, and FIG. 11(B) is a flowchart for explaining interrupt processing. FIG. 11 is a flowchart for explaining a program according to an aspect of the present invention. FIG. 11(A) is a flowchart for explaining the main processing of a program according to an aspect of the present invention, and FIG. 11(B) is a flowchart for explaining interrupt processing. FIG. 11 is a flowchart for explaining a program according to an aspect of the present invention. FIG. 11(A) is a flowchart for explaining the main processing of a program according to an aspect of the present invention, and FIG. 11(B) is a flowchart for explaining interrupt processing.

[0327] FIG. 12 is a diagram for explaining a program according to an aspect of the present invention. FIG. 12(A) is a flowchart for explaining the interrupt process of a program according to an aspect of the present invention. Further, FIG. 12(B ) is a schematic diagram for explaining the operation of the information processing apparatus, and FIG. 12(C) is a timing chart for explaining the operation of the information processing apparatus according to an aspect of the present invention.

[0328] <Configuration Example 1 of Information Processing Apparatus> The information processing apparatus described in the present embodiment includes an arithmetic unit 210 and an input / output unit 220 (see FIG. 10(A)). Note that the input / output unit 220 is electrically connected to the arithmetic unit 210 . Further, the information processing apparatus 200 can include a housing (see FIGS. 10(B) and FIG 10(C)).

[0329] <<Configuration Example 1 of Arithmetic Unit 210>> The arithmetic unit 210 is supplied with input information II or detection information DS. The arithmetic unit 210 generates control information CI and image information VI based on the input information II or detection information DS, and supplies the control information CI and the image information VI.

[0330] The arithmetic unit 210 includes an arithmetic section 211 and a storage section 212. Further, the arithmetic unit 210 includes a transmission path 214 and an input / output interface 215.

[0331] The transmission path 214 is electrically connected to the arithmetic section 211, the storage section 212, and the input / output interface 215 .

[0332] <<Arithmetic Section 211>> The arithmetic section 211 has, for example, a function of executing a program.

[0333] <<Storage Section 212>> The memory unit 212 has a function of storing, for example, a program executed by the arithmetic unit 211, initial information, setting information, or an image or the like.

[0334] Specifically, a memory or the like using a hard disk, a flash memory, or a transistor including an oxide semiconductor can be used.

[0335] 《Input / Output Interface 215, Transmission Path 214》 The input / output interface 215 includes terminals or wiring and has a function of supplying information and being supplied with information. For example, it can be electrically connected to the transmission path 214. Also, it can be electrically connected to the input / output device 220.

[0336] The transmission path 214 includes wiring and has a function of supplying information and being supplied with information. For example, it can be electrically connected to the input / output interface 215. Also, it can be electrically connected to the arithmetic unit 211, the memory unit 212, or the input / output interface 215.

[0337] 《Configuration Example of Input / Output Device 220》 The input / output device 220 supplies input information II and detection information DS. The input / output device 220 is supplied with control information CI and image information VI (see Fig. 10(A)).

[0338] For example, the input information II can use the scan code of a keyboard, position information, button operation information, voice information, or image information or the like. Or, for example, the detection information DS can use illuminance information, attitude information, acceleration information, azimuth information, pressure information, temperature information, or humidity information or the like of the environment in which the information processing device 200 is used.

[0339] ​For example, signals for controlling the brightness for displaying the image information VI, signals for controlling the saturation, and signals for controlling the hue can be used for the control information CI. Or, signals for changing the display of a part of the image information VI can be used for the control information CI. The input / output device 220 includes a display unit 230, an input unit 240, and a detection unit 250. For example, the input / output device described in Embodiment 6 can be used as the input / output device 220.

[0340] The input / output device 220 can also include a communication unit 290. The input / output device described in Embodiment 6 can be used as the input / output device 220. The input / output device 220 can also include a communication unit 290.

[0341] 《Configuration example of the display unit 230》 The display unit 230 displays the image information VI based on the control information CI. For example, the display device described in Embodiment 5 can be used as the display unit 230.

[0342] 《Configuration example of the input unit 240》 The input unit 240 generates input information II. For example, the input unit 240 has a function of supplying position information.

[0343] For example, a human interface or the like can be used as the input unit 240 (see FIG. 10(A)). Specifically, a keyboard, a mouse, a touch sensor, a microphone, a camera, or the like can be used as the input unit 240.

[0344] Also, a touch sensor having an area overlapping the display unit 230 can be used. Note that an input / output device including a touch sensor having an area overlapping the display unit 230 and the display unit 230 can be referred to as a touch panel or a touch screen.

[0345] For example, the user can use the finger touching the touch panel as a pointer to perform various gestures (ta ​​​It is possible to perform operations such as tapping, dragging, swiping, or pinching in.

[0346] For example, the arithmetic unit 210 analyzes information such as the position or trajectory of a finger touching the touch panel. When the analysis result satisfies a predetermined condition, it can be assumed that a predetermined gesture has been supplied. As a result, the user can supply a predetermined operation command associated in advance with the predetermined gesture using the gesture.

[0347] For example, the user can supply a "scroll command" for changing the display position of the image information using a gesture of moving a finger that touches the touch panel along the touch panel. .

[0348] In addition, the user can supply a "drag command" for pulling out and displaying the navigation panel NP at the end of the area 231 using a gesture of moving a finger that touches the end of the area 231. Further, the user can supply a "leaf-through command" for displaying the index image IND, a part of another page, or a thumbnail image TN of another page in the navigation panel NP in a predetermined order using a gesture of moving the position where the finger is strongly pressed. Or it can be supplied using the pressure of pressing the finger. As a result, it is possible to turn the pages of the e-book terminal as if turning the pages of a paper book. Or, it is possible to search for a predetermined page relying on the thumbnail image TN or the index image IND. .

[0349] <<Configuration Example of Detection Unit 250>> The detection unit 250 generates detection information DS. For example, the detection unit 250 is the information processing apparatus 200. ​​​​​It has a function of detecting the illuminance of the environment in which it is used and a function of supplying illuminance information.

[0350] The detection unit 250 has a function of detecting the surrounding state and supplying detection information. Specifically, it can supply illuminance information, attitude information, acceleration information, azimuth information, pressure information, temperature information, humidity information, etc.

[0351] For example, a photodetector, an attitude detector, an acceleration sensor, an azimuth sensor, a GPS (Global Positioning System) signal receiving circuit, a pressure-sensitive switch, a pressure sensor, a temperature sensor, a humidity sensor, a camera, etc. can be used for the detection unit 250.

[0352] 《Communication unit 290》 The communication unit 290 has a function of supplying information to a network and acquiring information from the network.

[0353] 《Housing》 Note that the housing has a function of housing the input / output device 220 or the arithmetic unit 210. Or, the housing has a function of supporting the display unit 230 or the arithmetic unit 210.

[0354] Thereby, control information CI can be generated based on the input information II or the detection information DS. Or, based on the input information II or the detection information DS, image information VI can be displayed. Or, the information processing device can operate by grasping the intensity of light received by the housing of the information processing device in the environment where the information processing device is used. Or, the user of the information processing device can select a display method. As a result, a novel information processing device excellent in convenience, usefulness, or reliability can be provided.

[0355] ​​​​​Note that these configurations cannot be clearly separated, and one configuration may also serve as another configuration or include a part of another configuration. For example, a touch panel with a touch sensor overlaid on a display panel is both a display unit and an input unit. For example, a touch panel with a touch sensor overlaid on a display panel is both a display unit and an input unit.

[0356] 《Configuration Example 2 of Arithmetic Unit 210》 The arithmetic unit 210 includes an artificial intelligence unit 213 (see Fig. 10(A)).

[0357] The artificial intelligence unit 213 is supplied with input information II or detection information DS, and the artificial intelligence unit 213 infers control information CI based on the input information II or the detection information DS. Also, the artificial intelligence unit 213 supplies the control information CI.

[0358] As a result, it is possible to generate control information CI for display so as to be felt suitable, or to be able to display so as to be felt suitable, or to be able to generate control information CI for display so as to be felt comfortable, or to be able to display so as to be felt comfortable. As a result, it is possible to provide a novel information processing apparatus excellent in convenience, usefulness, or reliability. or to be able to display so as to be felt suitable, or to be able to generate control information CI for display so as to be felt comfortable, or to be able to display so as to be felt comfortable. As a result, it is possible to provide a novel information processing apparatus excellent in convenience, usefulness, or reliability. or to be able to display so as to be felt comfortable. As a result, it is possible to provide a novel information processing apparatus excellent in convenience, usefulness, or reliability. As a result, it is possible to provide a novel information processing apparatus excellent in convenience, usefulness, or reliability.

[0359] [Natural Language Processing for Input Information II] Specifically, the artificial intelligence unit 213 can perform natural language processing on the input information II and extract one feature from the entire input information II. For example, the artificial intelligence unit 213 can infer and characterize emotions or the like included in the input information II. Also, it is possible to infer colors, patterns, or fonts that are empirically felt to be suitable for the feature. Also, the artificial intelligence unit 213 For example, the artificial intelligence unit 213 can infer and characterize emotions or the like included in the input information II. Also, it is possible to infer colors, patterns, or fonts that are empirically felt to be suitable for the feature. Also, the artificial intelligence unit 213 can infer and characterize emotions or the like included in the input information II. Also, it is possible to infer colors, patterns, or fonts that are empirically felt to be suitable for the feature. Also, the artificial intelligence unit 213 can infer colors, patterns, or fonts that are empirically felt to be suitable for the feature. Also, the artificial intelligence unit 213 generates information specifying the color, pattern, or font of characters, and information specifying the color or pattern of the background. ​It can be used for the control information CI.

[0360] Specifically, the artificial intelligence unit 213 can perform natural language processing on the input information II and extract some words included in the input information II. For example, the artificial intelligence unit 213 can extract expressions including grammatical errors, factual misidentifications, or emotions. In addition, the artificial intelligence unit 213 can generate information for displaying a part of the extracted content in a color, pattern, or font different from other parts, and can be used for the control information CI. It can be used for the control information CI.

[0361] [Image processing for the input information II] Specifically, the artificial intelligence unit 213 can perform image processing on the input information II and extract one feature from the input information II. For example, the artificial intelligence unit 213 can infer and characterize the era when the input information II was taken, indoors or outdoors, day or night, etc. In addition, it can infer a color tone that is empirically felt to be suitable for the feature and generate control information CI for using the color tone in the display. Specifically, information specifying the color used for the expression of shading (for example, full color, black and white, or sepia) can be used for the control information CI. It can be used for the control information CI.

[0362] Specifically, the artificial intelligence unit 213 can perform image processing on the input information II and extract some images included in the input information II. For example, control information CI for displaying a boundary between a part of the extracted image and other parts can be generated. Specifically, control information CI for displaying a rectangle enclosing a part of the extracted image can be generated.

[0363] [Inference using the detection information DS] Specifically, the artificial intelligence unit 213 can use the detection information DS to generate an inference. Alternatively, based on the inference, control information CI can be generated so that the user of the information processing apparatus 200 feels comfortable. Control information CI can be generated.

[0364] Specifically, based on the illuminance of the environment or the like, the artificial intelligence unit 213 can generate control information CI for adjusting the display brightness so that the display brightness is felt to be comfortable. Alternatively, the artificial intelligence unit 213 can generate control information CI for adjusting the volume so that the volume is felt to be comfortable based on the noise of the environment or the like. Alternatively, the artificial intelligence unit 213 can generate control information CI for adjusting the volume so that the volume is felt to be comfortable based on the noise of the environment or the like. Control information CI for adjusting the volume can be generated so that the volume is felt to be comfortable.

[0365] Note that a clock signal or a timing signal supplied to the control unit 238 provided in the display unit 230 can be used as the control information CI. Alternatively, a clock signal or a timing signal supplied to the control unit provided in the input unit 240 can be used as the control information CI. Note that a clock signal or a timing signal supplied to the control unit 238 provided in the display unit 230 can be used as the control information CI. Alternatively, a clock signal or a timing signal supplied to the control unit provided in the input unit 240 can be used as the control information CI. Control information CI for adjusting the volume can be generated so that the volume is felt to be comfortable.

[0366] <Configuration Example 2 of Information Processing Apparatus> Another configuration of the information processing apparatus according to an aspect of the present invention will be described with reference to FIGS. 11(A) and 11(B). Refer to FIGS. 11(A) and 11(B).

[0367] 《Program》 The program according to an aspect of the present invention has the following steps (see FIG. 11(A)).

[0368] [First Step] In the first step, the settings are initialized (see FIG. 11(A) (S1)).

[0369] For example, at startup, predetermined image information to be displayed, a predetermined mode for displaying the image information, and information specifying a predetermined display method for displaying the image information are acquired from the storage unit 212. Specifically, one still image information or other moving image information can be used as the predetermined image information. Specifically, one still image information or other moving image information can be used as the predetermined image information. It is possible. Also, the first mode or the second mode can be used as a predetermined mode.

[0370] [Second step] In the second step, interrupt processing is permitted (see Fig. 11(A)(S2)). Note that the arithmetic unit for which interrupt processing is permitted can perform interrupt processing in parallel with the main processing. The arithmetic unit that has returned from the interrupt processing to the main processing can reflect the result obtained by the interrupt processing in the main processing.

[0371] Note that when the value of the counter is the initial value, the arithmetic unit is made to perform interrupt processing, and when returning from the interrupt processing the counter may be set to a value other than the initial value. Thereby, interrupt processing can always be performed after the program is started.

[0372] [Third step] In the third step, the image information is displayed using the predetermined mode or the predetermined display method selected in the first step or the interrupt processing (see Fig. 11(A)(S3) ). Note that the predetermined mode specifies the mode for displaying information, and the predetermined display method specifies the method for displaying information . Also, for example, it can be used for the information for displaying the image information VI .

[0373] For example, one method of displaying the image information VI can be associated with the first mode. Or, another method of displaying the image information VI can be associated with the second mode. Thus the display method can be selected based on the selected mode.

[0374] 《First mode》 Specifically, a selection signal is supplied to one scanning line at a frequency of 30 Hz or higher, preferably 60 Hz or higher. A method of providing and displaying based on a selection signal can be associated with a first mode.

[0375] For example, when a selection signal is supplied at a frequency of 30 Hz or more, preferably 60 Hz or more, the movement of a moving image can be smoothly displayed.

[0376] For example, when an image is updated at a frequency of 30 Hz or more, preferably 60 Hz or more, an image that changes smoothly following the user's operation can be displayed on the information processing apparatus 200 during the user's operation.

[0377] <<Second Mode>> Specifically, a method of supplying a selection signal to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute, and displaying based on the selection signal can be associated with a second mode.

[0378] When a selection signal is supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute, a display with suppressed flicker or flickering can be achieved. Also, power consumption can be reduced.

[0379] For example, when the information processing apparatus 200 is used as a clock, the display can be updated at a frequency of once per second or once per minute.

[0380] [Fourth Step] In the fourth step, when an end command is supplied, proceed to the fifth step; when no end command is supplied, select to proceed to the third step (see Fig. 11(A) (S4)).

[0381] For example, an end command supplied in the interrupt process may be used for determination.

[0382] [Step 5] In the fifth step, end (see Fig. 11(A)(S5)).

[0383] 《Interrupt Process》 The interrupt process includes the following sixth to eighth steps (see Fig. 11(B)) .

[0384] [Step 6] In the sixth step, for example, using the detection unit 250, the illuminance of the environment in which the information processing apparatus 200 is used is detected (see Fig. 11(B)(S6)). Instead of the illuminance of the environment, the color temperature or chromaticity of the ambient light may be detected.

[0385] [Step 7] In the seventh step, a display method is determined based on the detected illuminance information (see Fig. 11(B)(S7)). For example, it is determined so that the brightness of the display is not too dark or not too bright.

[0386] When the color temperature or chromaticity of the ambient light is detected in the sixth step, the color tone of the display may be adjusted.

[0387] [Step 8] In the eighth step, the interrupt process is terminated (see Fig. 11(B)(S8)).

[0388] <Configuration Example 3 of Information Processing Apparatus> Another configuration of the information processing apparatus according to an aspect of the present invention will be described with reference to Fig. 12.

[0389] Fig. 12(A) is a flowchart for explaining a program according to an aspect of the present invention. Fig. 12 (A) is a flow chart explaining an interrupt process different from the interrupt process shown in FIG. 11(B). It is a chart.

[0390] In addition, the third example of the information processing device changes the mode based on a given event. The fact that the interrupt process includes a step for performing the above-mentioned operation is the same as that of the interrupt process described with reference to FIG. This section describes the differences in detail and explains how to use a similar configuration. The above explanation will be used to explain the parts that can be used.

[0391] <<Interrupt Processing>> The interrupt process includes the following sixth to eighth steps (see FIG. 12(A)). .

[0392] [Sixth step] In the sixth step, if a predetermined event is provided, the seventh step is performed; If the predetermined event is not provided, proceed to the eighth step (FIG. 12(A) (U6 For example, a condition can be whether a specific event was provided within a specific period of time. Specifically, it is possible to perform the above-mentioned operation for 5 seconds or less, 1 second or less, or 0.5 seconds or less, preferably 0.1 seconds or less. The predetermined period may be a period longer than 0 seconds.

[0393] [Seventh step] In the seventh step, the mode is changed (see FIG. 12(A)(U7)). Specifically, If you have selected the first mode, select the second mode, and then select the second mode. If so, the first mode is selected.

[0394] For example, the display mode of a part of the display unit 230 can be changed. In terms of the display unit 230 including the drive circuit GDA, the drive circuit GDB, and the drive circuit GDC, the display mode can be changed for the area where one drive circuit supplies a selection signal ( see Fig. 12(B)).

[0395] For example, when a predetermined event is supplied to the input unit 240 in the area overlapping with the area where the drive circuit GDB supplies a selection signal, the display mode of the area where the drive circuit GDB supplies a selection signal can be changed (see Figs. 12(B) and 12(C)). Specifically, in response to a "tap" event supplied to the touch panel using a finger or the like, the frequency of the selection signal supplied by the drive circuit GDB can be changed.

[0396] Note that the signal GCLK is a clock signal for controlling the operation of the drive circuit GDB, and the signals PWC1 and PWC2 are pulse width control signals for controlling the operation of the drive circuit GDB. The drive circuit GDB supplies a selection signal to the conductive films G2(m + 1) to G2(2m) based on the signal GCLK, the signal PWC1, the signal PWC2, and the like.

[0397] Thus, for example, the drive circuits GDA and GDC do not supply a selection signal, and the drive circuit GDB can supply a selection signal. Or, without changing the display of the area where the drive circuits GDA and GDC supply a selection signal, the display of the area where the drive circuit GDB supplies a selection signal can be updated. Or, the power consumption of the drive circuit can be suppressed.

[0398] [Step 8] In the eighth step, the interrupt process is terminated (see Fig. 12(A)(U8)). Note that ​​​​​​​​​During the period of executing the main process, the interrupt process may be repeatedly executed.

[0399] 《Predetermined event》 For example, "click" or "drag" supplied using a pointing device such as a mouse events such as "tap", "drag g" or "swipe" events supplied to the touch panel using a finger or the like as a pointer can be used.

[0400] Also, for example, the position of the slider pointed to by the pointer, the speed of the swipe, the speed of the drag, etc. can be used to give the arguments of the instructions associated with the predetermined event.

[0401] For example, the information detected by the detection unit 250 is compared with a preset threshold value, and the comparison result can be used as an event.

[0402] Specifically, a pressure sensor that contacts a button or the like arranged so as to be pushed into the housing or the like can be used as the detection unit 250.

[0403] 《Instructions associated with a predetermined event》 For example, an end instruction can be associated with a predetermined event.

[0404] For example, a "page turning instruction" for switching the display from one displayed image information to another can be associated with a predetermined event. Note that an argument for determining the speed of turning the page used when executing the "page turning instruction" can be given using a predetermined event.

[0405] For example, moving the display position of a part of one displayed image information and making it continuous with a part "Scroll commands" for displaying other parts can be associated with a predetermined event and so on. When executing the "scroll command", arguments for determining the speed of moving the display used, etc., can be given using a predetermined event and so on. For example, commands for setting a display method or generating image information can be associated with a predetermined event

[0406] and so on. In addition, arguments for determining the brightness of the generated image can be associated with a predetermined event and so on. Further, the arguments for determining the brightness of the generated image may be determined based on the brightness of the environment detected by the detection unit 250 For example, commands for acquiring information distributed using a push-type service using the communication unit 290 can be associated with a predetermined event and so on. In addition, the presence or absence of the qualification to acquire information may be determined using the position information detected by the detection unit 250

[0407] Specifically, when in a predetermined classroom, school, conference room, company, building, etc., it may be determined that there is a qualification to acquire information and so on. As a result, for example, teaching materials distributed in a classroom at a school or university can be received and the information processing apparatus 200 can be used as a textbook

[0408] (see Fig. 10(C)). Or materials distributed in a conference room of a company can be received and used as conference materials and so on. In addition, this embodiment can be appropriately combined with other embodiments shown in this specification and so on. (Embodiment 8) In this embodiment, regarding the configuration of the information processing apparatus according to an aspect of the present invention, Figs. 13 to 15 will be used and so on. and so on.

[0409] and so on. and so on.

[0410] (Embodiment 8) In this embodiment, regarding the configuration of the information processing apparatus according to an aspect of the present invention, with reference to Figs. 13 to 15 A description will be given with reference thereto.

[0411] FIGS. 13 to 15 are diagrams for explaining the configuration of an information processing apparatus according to an aspect of the present invention. FIG. 13 (A) is a block diagram of the information processing apparatus, and FIGS. 13(B) to 13(E) are perspective views for explaining the configuration of the information processing apparatus. Also, FIGS. 14(A) to 14(E) are perspective views for explaining the configuration of the information processing apparatus Also, FIGS. 15(A) and 15(B) are perspective views for explaining the configuration of the information processing apparatus is a perspective view for explaining the configuration of the information processing apparatus.

[0412] <Information Processing Apparatus> The information processing apparatus 5200B described in the present embodiment includes an arithmetic unit 5210 and an input / output unit 5 220 (see FIG. 13(A)).

[0413] The arithmetic unit 5210 has a function of supplying operation information and a function of supplying image information based on the operation information. is provided with a function of supplying image information.

[0414] The input / output unit 5220 includes a display unit 5230, an input unit 5240, a detection unit 5250, a communication unit 52 90, a function of supplying operation information, and a function of being supplied with image information. Further, the input / output unit 5220 has a function of supplying detection information, a function of supplying communication information, and a function of being supplied with communication information. is provided with a function of supplying communication information.

[0415] The input unit 5240 has a function of supplying operation information. For example, the input unit 5240 supplies operation information based on the operation of the user of the information processing apparatus 5200B.

[0416] Specifically, a keyboard, a hardware button, a pointing device, a touch sensor , an illuminance sensor, an imaging device, an audio input device, a gaze input device, a posture detection device, etc. are used as the input unit 5 It can be used for 240.

[0417] The display unit 5230 has a function of displaying a display panel and image information. For example, the display panel described in Embodiment 1 to Embodiment 4 can be used for the display unit 5230. It can be used.

[0418] The detection unit 5250 has a function of supplying detection information. For example, it has a function of detecting the surrounding environment in which the information processing apparatus is used and supplying it as detection information.

[0419] Specifically, an illuminance sensor, an imaging device, an attitude detection device, a pressure sensor, a human sensor, etc. can be used for the detection unit 5250. It can be used.

[0420] The communication unit 5290 has a function of being supplied with communication information and a function of supplying it. For example, it has a function of connecting to other electronic devices or a communication network by wireless communication or wired communication. Specifically, it has functions such as wireless in-building communication, telephone communication, and short-range wireless communication.

[0421] 《Configuration Example 1 of Information Processing Apparatus》 For example, an outer shape along a cylindrical column or the like can be applied to the display unit 5230 (see Fig. 13(B)). Also, it has a function of changing the display method according to the illuminance of the usage environment. Also, it has a function of detecting the presence of a person and changing the display content. Thereby, for example, it can be installed on a column of a building. Or, it can display an advertisement or guidance, etc. Or, it can be used for digital signage, etc.

[0422] 《Configuration Example 2 of Information Processing Apparatus》 For example, it has a function of generating image information based on the locus of a pointer used by a user. Refer to FIG. 13(C). Specifically, a display panel with a diagonal length of 20 inches or more, preferably 40 inches or more, more preferably 55 inches or more can be used. Or, a plurality of display panels can be arranged and used in one display area. Or, a plurality of display panels can be arranged and used for a multi-screen. Thereby, for example, it can be used for an electronic blackboard, an electronic bulletin board, an electronic signboard, etc. Also, it can receive information from other devices and display it on the display unit 5230 (refer to FIG. 13(D)). Or, several options can be displayed. Or, the user can select some from the options and reply to the information source. Or, for example, it has a function of changing the display method according to the illuminance of the usage environment. Thereby, for example, the power consumption of a smartwatch can be reduced. Or, for example, an image can be displayed on the smartwatch so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day. 《Configuration Example 3 of Information Processing Device》 It can receive information from other devices and display it on the display unit 5230 (refer to FIG. 13(D)). Or, several options can be displayed. Or, the user can select some from the options and reply to the information source. Or, for example, it has a function of changing the display method according to the illuminance of the usage environment. Thereby, for example, the power consumption of a smartwatch can be reduced. Or, for example, an image can be displayed on the smartwatch so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day. 《Configuration Example 4 of Information Processing Device》

[0423] The display unit 5230 has, for example, a curved surface that gently curves along the side surface of the housing (refer to FIG. 13(E)). Or, the display unit 5230 includes a display panel, and the display panel has a function of displaying on, for example, the front surface, side surface, top surface, and back surface. Thereby, for example, information can be displayed not only on the front surface of a mobile phone but also on the side surface, top surface, and back surface. It can receive information from other devices and display it on the display unit 5230 (refer to FIG. 13(D)). Or, several options can be displayed. Or, the user can select some from the options and reply to the information source. Or, for example, it has a function of changing the display method according to the illuminance of the usage environment. Thereby, for example, the power consumption of a smartwatch can be reduced. Or, for example, an image can be displayed on the smartwatch so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day. It can receive information from other devices and display it on the display unit 5230 (refer to FIG. 13(D)). Or, several options can be displayed. Or, the user can select some from the options and reply to the information source. Or, for example, it has a function of changing the display method according to the illuminance of the usage environment. Thereby, for example, the power consumption of a smartwatch can be reduced. Or, for example, an image can be displayed on the smartwatch so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day. It can receive information from other devices and display it on the display unit 5230 (refer to FIG. 13(D)). Or, several options can be displayed. Or, the user can select some from the options and reply to the information source. Or, for example, it has a function of changing the display method according to the illuminance of the usage environment. Thereby, for example, the power consumption of a smartwatch can be reduced. Or, for example, an image can be displayed on the smartwatch so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day. It can receive information from other devices and display it on the display unit 5230 (refer to FIG. 13(D)). Or, several options can be displayed. Or, the user can select some from the options and reply to the information source. Or, for example, it has a function of changing the display method according to the illuminance of the usage environment. Thereby, for example, the power consumption of a smartwatch can be reduced. Or, for example, an image can be displayed on the smartwatch so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day. It can receive information from other devices and display it on the display unit 5230 (refer to FIG. 13(D)). Or, several options can be displayed. Or, the user can select some from the options and reply to the information source. Or, for example, it has a function of changing the display method according to the illuminance of the usage environment. Thereby, for example, the power consumption of a smartwatch can be reduced. Or, for example, an image can be displayed on the smartwatch so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day. 《Configuration Example 5 of Information Processing Device》

[0424] For example, it can receive information from the Internet and display it on the display unit 5230 ( Refer to FIG. 13(C). Specifically, a display panel with a diagonal length of 20 inches or more, preferably 40 inches or more, more preferably 55 inches or more can be used. Or, a plurality of display panels can be arranged and used in one display area. Or, a plurality of display panels can be arranged and used for a multi-screen. Thereby, for example, it can be used for an electronic blackboard, an electronic bulletin board, an electronic signboard, etc. The display unit 5230 has, for example, a curved surface that gently curves along the side surface of the housing (refer to FIG. 13(E)). Or, the display unit 5230 includes a display panel, and the display panel has a function of displaying on, for example, the front surface, side surface, top surface, and back surface. Thereby, for example, information can be displayed not only on the front surface of a mobile phone but also on the side surface, top surface, and back surface. For example, it can receive information from the Internet and display it on the display unit 5230 ( Refer to FIG. 13(C). Specifically, a display panel with a diagonal length of 20 inches or more, preferably 40 inches or more, more preferably 55 inches or more can be used. Or, a plurality of display panels can be arranged and used in one display area. Or, a plurality of display panels can be arranged and used for a multi-screen. Thereby, for example, it can be used for an electronic blackboard, an electronic bulletin board, an electronic signboard, etc.

[0425] 《Configuration Example 5 of Information Processing Device》 For example, it can receive information from the Internet and display it on the display unit 5230 ( Refer to FIG. 14(A). Or, the created message can be confirmed on the display unit 5230. Or, the created message can be transmitted to another device. Or, for example, it has a function of changing the display method according to the illuminance of the usage environment. Thereby, the power consumption of the smartphone can be reduced. Or, for example, an image can be displayed on the smartphone so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day. Or, the created message can be confirmed on the display unit 5230. Or, the created message can be transmitted to another device. Or, for example, it has a function of changing the display method according to the illuminance of the usage environment. Thereby, the power consumption of the smartphone can be reduced. Or, for example, an image can be displayed on the smartphone so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day. Refer to FIG. 14(A). Or, the created message can be confirmed on the display unit 5230. Or, the created message can be transmitted to another device. Or, for example, it has a function of changing the display method according to the illuminance of the usage environment. Thereby, the power consumption of the smartphone can be reduced. Or, for example, an image can be displayed on the smartphone so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day. Refer to FIG. 14(A). Or, the created message can be confirmed on the display unit 5230. Or, the created message can be transmitted to another device. Or, for example, it has a function of changing the display method according to the illuminance of the usage environment. Thereby, the power consumption of the smartphone can be reduced. Or, for example, an image can be displayed on the smartphone so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day. Refer to FIG. 14(A). Or, the created message can be confirmed on the display unit 5230. Or, the created message can be transmitted to another device. Or, for example, it has a function of changing the display method according to the illuminance of the usage environment. Thereby, the power consumption of the smartphone can be reduced. Or, for example, an image can be displayed on the smartphone so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day.

[0426] <<Configuration Example 6 of Information Processing Device>> A remote controller can be used as the input unit 5240 (refer to FIG. 14(B)). Or, for example, information can be received from a broadcasting station or the Internet and displayed on the display unit 5230. Or, the detection unit 5250 can be used to photograph the user. Or, the video of the user can be transmitted. Or, the viewing history of the user can be acquired and provided to the cloud service. Or, recommendation information can be acquired from the cloud service and displayed on the display unit 5230. Or, a program or video can be displayed based on the recommendation information. Or, for example, information can be received from a broadcasting station or the Internet and displayed on the display unit 5230. Or, the detection unit 5250 can be used to photograph the user. Or, the video of the user can be transmitted. Or, the viewing history of the user can be acquired and provided to the cloud service. Or, recommendation information can be acquired from the cloud service and displayed on the display unit 5230. Or, a program or video can be displayed based on the recommendation information. Or, for example, information can be received from a broadcasting station or the Internet and displayed on the display unit 5230. Or, the detection unit 5250 can be used to photograph the user. Or, the video of the user can be transmitted. Or, the viewing history of the user can be acquired and provided to the cloud service. Or, recommendation information can be acquired from the cloud service and displayed on the display unit 5230. Or, a program or video can be displayed based on the recommendation information. Or, for example, information can be received from a broadcasting station or the Internet and displayed on the display unit 5230. Or, the detection unit 5250 can be used to photograph the user. Or, the video of the user can be transmitted. Or, the viewing history of the user can be acquired and provided to the cloud service. Or, recommendation information can be acquired from the cloud service and displayed on the display unit 5230. Or, a program or video can be displayed based on the recommendation information. Or, for example, information can be received from a broadcasting station or the Internet and displayed on the display unit 5230. Or, the detection unit 5250 can be used to photograph the user. Or, the video of the user can be transmitted. Or, the viewing history of the user can be acquired and provided to the cloud service. Or, recommendation information can be acquired from the cloud service and displayed on the display unit 5230. Or, a program or video can be displayed based on the recommendation information. Or, for example, it has a function of changing the display method according to the illuminance of the usage environment. Thereby, the video can be displayed on the television system so that it can be suitably used even when strong external light shines indoors on a sunny day. Or, for example, it has a function of changing the display method according to the illuminance of the usage environment. Thereby, the video can be displayed on the television system so that it can be suitably used even when strong external light shines indoors on a sunny day. Or, for example, it has a function of changing the display method according to the illuminance of the usage environment. Thereby, the video can be displayed on the television system so that it can be suitably used even when strong external light shines indoors on a sunny day.

[0427] <<Configuration Example 7 of Information Processing Device>> For example, teaching materials can be received from the Internet and displayed on the display unit 5230 (refer to FIG. 14(C)). Or, the input unit 5240 can be used to input a report and transmit it to the Internet. Or, the result of proofreading the report can be obtained from the cloud service. For example, teaching materials can be received from the Internet and displayed on the display unit 5230 (refer to FIG. 14(C)). Or, the input unit 5240 can be used to input a report and transmit it to the Internet. Or, the result of proofreading the report can be obtained from the cloud service. For example, teaching materials can be received from the Internet and displayed on the display unit 5230 (refer to FIG. 14(C)). Or, the input unit 5240 can be used to input a report and transmit it to the Internet. Or, the result of proofreading the report can be obtained from the cloud service. Alternatively, the evaluation can be obtained and displayed on the display unit 5230. Or, based on the evaluation, a suitable teaching material can be selected and displayed. teaching material can be selected and displayed.

[0428] For example, an image signal can be received from another information processing device and displayed on the display unit 5230. Or, it can be propped up on a stand or the like and the display unit 5230 can be used as a sub-display. Thereby, for example, an image can be displayed on the tablet computer so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day. Thereby, for example, an image can be displayed on the tablet computer so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day.

[0429] <<Configuration Example 8 of Information Processing Device>> The information processing device includes, for example, a plurality of display units 5230 (see FIG. 14(D)). For example, while shooting with the detection unit 5250, it can be displayed on the display unit 5230. Or, the captured video can be displayed on the detection unit. Or, using the input unit 5240, the captured video can be decorated. Or, a message can be attached to the captured video. Or, it can be transmitted to the Internet. Or, it is provided with a function of changing the shooting conditions according to the illuminance of the usage environment. Thereby, for example, a subject can be displayed on the digital camera so that it can be suitably browsed even in an environment with strong external light such as outdoors on a sunny day. Thereby, for example, a subject can be displayed on the digital camera so that it can be suitably browsed even in an environment with strong external light such as outdoors on a sunny day. Thereby, for example, a subject can be displayed on the digital camera so that it can be suitably browsed even in an environment with strong external light such as outdoors on a sunny day. Thereby, for example, a subject can be displayed on the digital camera so that it can be suitably browsed even in an environment with strong external light such as outdoors on a sunny day.

[0430] <<Configuration Example 9 of Information Processing Device>> For example, another information processing device can be used as a slave and the information processing device of the present embodiment can be used as a master to control the other information processing device (see FIG. 14(E)). Or, for example, a part of the image information can be displayed on the display unit 5230 and another part of the image information can be displayed on the display unit of another information processing device. Or, an image signal can be supplied. Or, a part of the image information can be displayed on the display unit 5230 and another part of the image information can be displayed on the display unit of another information processing device. Or, an image signal can be supplied. Or, a part of the image information can be displayed on the display unit 5230 and another part of the image information can be displayed on the display unit of another information processing device. Or, an image signal can be supplied. Or, Using the communication unit 5290, information to be written can be acquired from the input unit of another information processing apparatus. Thus, for example, a portable personal computer can be used to utilize a large display area.

[0431] 《Configuration Example 10 of Information Processing Apparatus》 The information processing apparatus includes, for example, a detection unit 5250 that detects acceleration or orientation (see FIG. 15(A)). Alternatively, the detection unit 5250 can supply information related to the position of the user or the direction the user is facing. Alternatively, the information processing apparatus can generate right-eye image information and left-eye image information based on the position of the user or the direction the user is facing. Alternatively, the display unit 5230 includes a right-eye display area and a left-eye display area. Thus, for example, a video of a virtual reality space that provides an immersive feeling can be displayed on a goggle-type information processing apparatus.

[0432] 《Configuration Example 11 of Information Processing Apparatus》 The information processing apparatus includes, for example, an imaging device and a detection unit 5250 that detects acceleration or orientation (see FIG. 15(B)). Alternatively, the detection unit 5250 can supply information related to the position of the user or the direction the user is facing. Alternatively, the information processing apparatus can generate image information based on the position of the user or the direction the user is facing. Thus, for example, information can be attached to and displayed on a real landscape. Alternatively, a video of an augmented reality space can be displayed on a glasses-type information processing apparatus.

[0433] Note that the present embodiment can be appropriately combined with other embodiments shown in this specification.

[0434] ​​​​​​​​​​​​​ (Embodiment 9) In this embodiment, the structure of the transistor that can be used for the function panel of one aspect of the present invention will be described with reference to FIG. 21. For example, it can be used for the transistor M21 or the transistor MD of the function panel of one aspect of the present invention described in Embodiment 1. For example, it can be used for the transistor M21 or the transistor MD of the function panel of one aspect of the present invention described in Embodiment 1. It can be used for transistors such as transistor M21 or transistor MD of the function panel of one aspect of the present invention. It can be used.

[0435] <Configuration Example of Semiconductor Device> The configuration of a semiconductor device having a transistor 300 will be described with reference to FIG. 21. FIGS. 21(A) to 21(D) are a top view and a cross-sectional view of a semiconductor device having a transistor 300. FIG. 21(A) is a top view of the semiconductor device. FIGS. 21(B) to 21(D) are cross-sectional views of the semiconductor device. Here, FIG. 21(B) is a cross-sectional view of the portion indicated by the dashed-dotted line A1 - A2 in FIG. 21(A), and is also a cross-sectional view in the channel length direction of the transistor 300. FIG. 21(C) is a cross-sectional view of the portion indicated by the dashed-dotted line A3 - A4 in FIG. 21(A), and is also a cross-sectional view in the channel width direction of the transistor 300. FIG. 21(D) is a cross-sectional view of the portion indicated by the dashed-dotted line A5 - A6 in FIG. 21(A). In the top view of FIG. 21(A), some elements are omitted for clarity of the figure. FIGS. 21(A) to 21(D) are a top view and a cross-sectional view of a semiconductor device having a transistor 300. FIG. 21(A) is a top view of the semiconductor device. FIGS. 21(B) to 21(D) are cross-sectional views of the semiconductor device. Here, FIG. 21(B) is a cross-sectional view of the portion indicated by the dashed-dotted line A1 - A2 in FIG. 21(A), and is also a cross-sectional view in the channel length direction of the transistor 300. FIG. 21(C) is a cross-sectional view of the portion indicated by the dashed-dotted line A3 - A4 in FIG. 21(A), and is also a cross-sectional view in the channel width direction of the transistor 300. FIG. 21(D) is a cross-sectional view of the portion indicated by the dashed-dotted line A5 - A6 in FIG. 21(A). In the top view of FIG. 21(A), some elements are omitted for clarity of the figure. FIG. 21(A) is a top view of the semiconductor device. FIGS. 21(B) to 21(D) are cross-sectional views of the semiconductor device. Here, FIG. 21(B) is a cross-sectional view of the portion indicated by the dashed-dotted line A1 - A2 in FIG. 21(A), and is also a cross-sectional view in the channel length direction of the transistor 300. FIG. 21(C) is a cross-sectional view of the portion indicated by the dashed-dotted line A3 - A4 in FIG. 21(A), and is also a cross-sectional view in the channel width direction of the transistor 300. FIG. 21(D) is a cross-sectional view of the portion indicated by the dashed-dotted line A5 - A6 in FIG. 21(A). In the top view of FIG. 21(A), some elements are omitted for clarity of the figure. Here, FIG. 21(B) is a cross-sectional view of the portion indicated by the dashed-dotted line A1 - A2 in FIG. 21(A), and is also a cross-sectional view in the channel length direction of the transistor 300. Here, FIG. 21(B) is a cross-sectional view of the portion indicated by the dashed-dotted line A1 - A2 in FIG. 21(A), and is also a cross-sectional view in the channel length direction of the transistor 300. Here, FIG. 21(B) is a cross-sectional view of the portion indicated by the dashed-dotted line A1 - A2 in FIG. 21(A), and is also a cross-sectional view in the channel length direction of the transistor 300. FIG. 21(C) is a cross-sectional view of the portion indicated by the dashed-dotted line A3 - A4 in FIG. 21(A), and is also a cross-sectional view in the channel width direction of the transistor 300. FIG. 21(C) is a cross-sectional view of the portion indicated by the dashed-dotted line A3 - A4 in FIG. 21(A), and is also a cross-sectional view in the channel width direction of the transistor 300. FIG. 21(D) is a cross-sectional view of the portion indicated by the dashed-dotted line A5 - A6 in FIG. 21(A). In the top view of FIG. 21(A), some elements are omitted for clarity of the figure.

[0436] Note that the film formation of the insulator, conductor, oxide, and semiconductor shown below is performed by sputtering, chemical vapor deposition (CVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), atomic layer deposition (ALD), etc. chemical vapor deposition (CVD) molecular beam epitaxy (MBE) pulsed laser deposition (PLD) It can be performed using, for example, the ALD (Atomic Layer Deposition) method. Also, in this specification and the like, the term "insulator" can be replaced with an insulating film or an insulating layer. Also, the term "conductor" can be replaced with a conductive film or a conductive layer. Also, the term "oxide" can be replaced with an oxide film or an oxide layer. Also, the term "semiconductor" can be replaced with a semiconductor film or a semiconductor layer.

[0437] A semiconductor device according to one aspect of the present invention includes an insulator 312 on a substrate (not shown), an insulator 314 on the insulator 312, a transistor 300 on the insulator 314, an insulator 380 on the transistor 300, an insulator 382 on the insulator 380, an insulator 383 on the insulator 382, and an insulator 385 on the insulator 383. The insulators 312, 314, 380, 382, 383, and 385 function as interlayer insulating films. Also, conductors 340 (conductors 340a and 340b) that are electrically connected to the transistor 300 and function as plugs are provided. Note that insulators 341 (insulators 341a and 341b) are provided in contact with the side surfaces of the conductors 340 that function as plugs. Also, conductors 346 (conductors 346a and 346b) that are electrically connected to the conductor 340 and function as wirings are provided on the insulator 385 and on the conductor 340.

[0438] An insulator 341a is provided in contact with the inner walls of the openings of the insulators 380, 382, 383, and 385, and a first conductive portion of the conductor 340a is in contact with the side surface of the insulator 341a. A body is provided, and a second conductor of the conductor 340a is further provided inside. Also, the ins ulator 380, insulator 382, insulator 383, and an insulator 341b are provided in contact with the inner wall of the opening of the insulator 385, and the first conductor of the conductor 340b is provided in contact with the side surface of the insulator 341b. A second conductor of the conductor 340b is further provided inside. Here, the height of the upper surface of the conductor 340 and the height of the upper surface of the insulator 385 in the region overlapping with the conductor 346 can be made approximately the same. In the transistor 300, the structure of laminating the first conductor and the second conductor of the conductor 340 is shown, but the present invention is not limited to this. For example, the conductor 340 may be provided in a single layer or a laminated structure of three or more layers. When the structure has a laminated structure, ordinal numbers may be assigned in the order of formation for distinction.

[0439] [Transistor 300] As shown in FIGS. 21(A) to 21(D), the transistor 300 includes an insulator 316 on the insulator 314, a conductor 305 (conductor 305a, conductor 305b, and conductor 305c) disposed so as to be embedded in the insulator 316, an insulator 322 on the insulator 316 and on the conductor 305, an insulator 324 on the insulator 322, an oxide 330a on the insulator 324, an oxide 330b on the oxide 330a, an oxide 343 (oxide 343a and oxide 343b) on the oxide 330b, a conductor 342a on the oxide 343a, an insulator 371a on the conductor 342a, a conductor 342b on the oxide 343b, an insulator 371b on the conductor 342b, and an insulator 350 (insulator 350a and insulator 350b) on the oxide 330b. ​​​​​​​​​​​​​The insulator 350b), and the conductor 36 located on the insulator 350 and overlapping a part of the oxide 330b 0 (conductor 360a and conductor 360b), and the insulator 322, insulator 324, oxide 330a, oxide 330b, oxide 343a, oxide 343b, conductor 342a, conductor 342b, insulator 371a, and the insulator 375 disposed to cover the insulator 371b and have.

[0440] Incidentally, in the following, there are cases where the oxide 330a and the oxide 330b are collectively referred to as the oxide 330 . Also, there are cases where the conductor 342a and the conductor 342b are collectively referred to as the conductor 342 . Also, there are cases where the insulator 371a and the insulator 371b are collectively referred to as the insulator 371 .

[0441] The insulator 380 and the insulator 375 are provided with openings reaching the oxide 330b. The insulator 350 and the conductor 360 are disposed in the opening. Also, in the channel length direction of the transistor 3 00, between the insulator 371a, the conductor 342a and the oxide 343a and the insulator 371b, the conductor 342b and the oxide 343b, the conductor 360, and the insulator 350 are provided. The insulator 350 has a region in contact with the side surface of the conductor 360 and a region in contact with the bottom surface of the conductor 360.

[0442] The oxide 330 preferably has the oxide 330a disposed on the insulator 324 and the oxide 330b disposed on the oxide 330a . By having the oxide 330a under the oxide 330b, diffusion of impurities from the structure formed below the oxide 330a to the oxide 3 30b can be suppressed.

[0443] Note that, in the transistor 300, the oxide 330 shows a structure in which two layers of the oxide 330a and the oxide 330 b are laminated, but the present invention is not limited to this. For example, a single layer of the oxide 330b or a laminated structure of three or more layers may be provided, or each of the oxide 330a and the oxide 330b may have a laminated structure.

[0444] The conductor 360 functions as a first gate (also referred to as a top gate) electrode, and the conductor 3 05 functions as a second gate (also referred to as a back gate) electrode. Further, the insulator 3 50 functions as a first gate insulating film, and the insulators 324 and 322 function as a second gate insulating film. Further, the conductor 342a functions as one of a source electrode or a drain electrode and the conductor 342b functions as the other of the source electrode or the drain electrode. Further, at least a part of the region of the oxide 330 that overlaps with the conductor 360 functions as a channel formation region.

[0445] The oxide 330b has one of a source region and a drain region in a region that overlaps with the conductor 342a, and has the other of the source region and the drain region in a region that overlaps with the conductor 342b. Further, the oxide 330b has a channel formation region (the region indicated by the hatched portion in FIG. 21(B)) in a region sandwiched between the source region and the drain region.

[0446] The channel formation region is a high-resistance region with a low carrier concentration because it has less oxygen deficiency or a lower impurity concentration than the source region and the drain region. Here, the carrier concentration in the channel formation region is 1×10 cm -3 18 18 cm -3It is preferably the following, 1×10 17 c m -3 It is more preferably less than, 1×10 16 cm -3 It is even more preferably less than and more preferably 1×10 13 cm -3 It is even more preferably less than, 1×10 12 cm -3 It is even more preferably less than. Regarding the lower limit value of the carrier concentration in the channel formation region, there is no particular limitation, but for example, it can be 1×10 -9 cm -3 and so on.

[0447] In the above, an example in which a channel formation region, a source region, and a drain region are formed in the oxide 330b has been shown, but the present invention is not limited thereto. For example, similarly, a channel formation region, a source region, and a drain region may be formed in the oxide 330a. There are cases where it is formed.

[0448] The transistor 300 uses a metal oxide (hereinafter also referred to as an oxide semiconductor) that functions as a semiconductor in the oxide 330 (oxide 330a and oxide 330b) including the channel formation region. ) preferably.

[0449] Also, as the metal oxide that functions as a semiconductor, it is preferable to use one having a band gap of 2 eV or more, preferably 2 .5 eV or more. In this way, by using a metal oxide having a large band gap, the off-current of the transistor can be reduced.

[0450] As the oxide 330, for example, an In-M-Zn oxide having indium, element M, and zinc Oxides (element M is selected from one or more of aluminum, gallium, yttrium, tin, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium, etc.) may be used. Also, as the oxide 330, In-Ga oxide, In-Zn oxide, or indium oxide may be used. Here, the atomic ratio of In to element M in the metal oxide used for the oxide 330b is preferably greater than the atomic ratio of In to element M in the metal oxide used for the oxide 330a. Specifically, as the oxide 330a, a metal oxide having a composition of In:M:Zn = 1:3:4 [atomic ratio] or in the vicinity thereof, or In:M:Zn = 1:1:0.5 [atomic ratio] or in the vicinity thereof may be used. Also, as the oxide 330b, a metal oxide having a composition of In:M:Zn = 1:1:1 [atomic ratio] or in the vicinity thereof, or In:M:Zn = 4:2:3 [atomic ratio] or in the vicinity thereof may be used. Here, the composition in the vicinity includes a range of ±30% of the desired atomic ratio. Also, it is preferable to use gallium as element M. When forming a film of the metal oxide by sputtering, the above atomic ratio is not limited to the atomic ratio of the formed metal oxide, and may be the atomic ratio of the sputtering target used for forming the metal oxide.

[0451]

[0452]

[0453]

[0454] ​​​​​​​​​​​​​​Thus, by disposing the oxide 330a under the oxide 330b, diffusion of impurities and oxygen from the structure formed below the oxide 330a into the oxide 330b can be suppressed.

[0455] In addition, since the oxides 330a and 330b have a common element other than oxygen (assuming the main component), the density of defect levels at the interface between the oxides 330a and 330b can be lowered. Since the density of defect levels at the interface between the oxides 330a and 330b can be lowered, the influence on carrier conduction due to interface scattering is small, and a high on-current can be obtained.

[0456] The oxides 330a and 330b preferably each have crystallinity. In particular, as the oxide 330b, it is preferable to use CAAC-OS (c-axis aligned crystalline oxide semiconductor).

[0457] CAAC-OS has a highly crystalline and dense structure and is a metal oxide with few impurities and defects (for example, oxygen vacancies (also referred to as V :oxygen vacancy)). In particular, by performing heat treatment at a temperature (for example, 4 O 00°C or higher and 600°C or lower) such that the metal oxide does not polycrystallize after formation of the metal oxide, CAAC-OS can be made to have a more highly crystalline and dense structure. In this way, by further increasing the density of CAAC-OS, diffusion of impurities or oxygen in the CAAC-OS can be further reduced.

[0458] On the other hand, since it is difficult to confirm distinct grain boundaries in CAAC-OS, carrier scattering due to grain boundaries can be reduced.​​​​​​​​​​​ It can be said that a decrease in the electron mobility that occurs is less likely. Therefore, the metal oxide having CAAC-OS has stable physical properties. Therefore, the metal oxide having CAAC-OS is strong against heat and has high reliability.

[0459] At least one of insulator 312, insulator 314, insulator 371, insulator 375, insulator 382, and insulator 383 preferably functions as a barrier insulating film that suppresses the diffusion of impurities such as water and hydrogen from the substrate side or from above the transistor 300 into the transistor 300. Therefore, at least one of insulator 312, insulator 314, insulator 371, insulator 375, insulator 382, and insulator 383 preferably uses an insulating material having a function of suppressing the diffusion of hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, 2 nitrogen oxide molecules (such as N 2 O, NO, NO etc.), copper atoms, etc. (the above impurities are difficult to permeate). Or, it is preferable to use an insulating material having a function of suppressing the diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.) (the above oxygen is difficult to permeate). Preferably.

[0460] In addition, in this specification, the barrier insulating film refers to an insulating film having barrier properties. In this specification, the barrier property means a function of suppressing the diffusion of the corresponding substance (also referred to as low permeability). Or, it means a function of capturing and fixing the corresponding substance (also referred to as gettering).

[0461] At least one of insulator 312, insulator 314, insulator 371, insulator 375, insulator 382, and insulator As the body 383, for example, aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium gallium zinc oxide, silicon nitride, or silicon oxynitride can be used. For example, as the insulator 312, the insulator 375, and the insulator 383, it is preferable to use silicon nitride or the like which has a higher hydrogen barrier property. Also, for example, as the insulator 314, the insulator 371, and the insulator 382, it is preferable to use aluminum oxide or magnesium oxide or the like which has a high function of capturing and fixing hydrogen. Thereby, it is possible to suppress diffusion of impurities such as water and hydrogen from the substrate side to the transistor 300 side through the insulator 312 and the insulator 314. Or, it is possible to suppress diffusion of impurities such as water and hydrogen from an interlayer insulating film or the like disposed outside the insulator 383 to the transistor 300 side. Or, it is possible to suppress diffusion of oxygen contained in the insulator 324 or the like to the substrate side through the insulator 312 and the insulator 314. Or, it is possible to suppress diffusion of oxygen contained in the insulator 380 or the like above the transistor

[0462] 300 through the insulator 382 or the like. In this way, it is preferable to form a structure in which the transistor 300 is surrounded by the insulator 312, the insulator 314, the insulator 371, the insulator 375, the insulator x(x is any number greater than 0), or MgO y (y is any number greater than 0 ) It is preferable to use metal oxides such as. Such a metal having an amorphous structure In the oxide, oxygen atoms have dangling bonds, and water may be captured or fixed by the dangling bonds . When such an amorphous structure is present Using a metal oxide as a component of the transistor 300, or By providing it around the transistor 300, hydrogen contained in the transistor 300, or hydrogen present around the transistor 300 can be captured or fixed. In particular, it is preferable to capture or fix hydrogen contained in the channel formation region of the transistor 300. Using a metal oxide having an amorphous structure as a component of the transistor 300, or providing it around the transistor 3 00 makes it possible to fabricate a transistor 300 and a semiconductor device having good characteristics and high reliability .

[0463] Note that the insulators 312, 314, 371, 375, 382, and insulator 383 preferably have an amorphous structure, but a polycrystalline structure region may be formed in part . Also, the insulators 312, 314, 371, 3 75, 382, and insulator 383 may have a multilayer structure in which an amorphous structure layer and a polycrystalline structure layer are laminated. For example, a laminated structure in which a polycrystalline structure layer is formed on an amorphous structure layer may also be used.

[0464] The insulators 312, 314, 371, 375, 382, and insulator ​The film formation of the body 383 may be performed, for example, using a sputtering method. Since the sputtering method does not require hydrogen to be used as the film formation gas, the hydrogen concentrations of the insulator 312, the insulator 314, the insulator 371, the insulator 375, the insulator 382, and the insulator 383 can be reduced. Note that the film formation method is not limited to the sputtering method, and CVD method, MBE method, P LD method, ALD method, etc. may be appropriately used.

[0465] Also, the insulator 316, the insulator 380, and the insulator 385 preferably have a lower dielectric constant than the insulator 314. By using a material with a low dielectric constant as the interlayer insulating film, the parasitic capacitance generated between the wirings can be reduced. For example, as the insulator 316, the insulator 380, and the insulator 3 85, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide with fluorine added, silicon oxide with carbon added, silicon oxide with carbon and nitrogen added , silicon oxide with pores, etc. may be appropriately used.

[0466] The conductor 305 is arranged so as to overlap with the oxide 330 and the conductor 360. Here

[0467] , the conductor 305 is preferably provided by being embedded in an opening formed in the insulator 316 . The conductor 305 has a conductor 305a, a conductor 305b, and a conductor 305c. The conductor 305a is provided in contact with the bottom surface and the side wall of the opening. The conductor 305b is provided so as to be embedded in a recess formed in the conductor 305a. Here, the upper surface of the conductor 305b is lower than the upper surface of the conductor 305a and the upper surface of the insulator 316. The conductor 30 ​​​5c is provided in contact with the upper surface of the conductor 305b and the side surface of the conductor 305a. Here the height of the upper surface of the conductor 305c substantially coincides with the height of the upper surface of the conductor 305a and the height of the upper surface of the insulator 316. That is, the conductor 305b is configured to be wrapped by the conductor 305a and the conductor 30 5c.

[0468] The conductor 305a and the conductor 305c can be used for the conductor 360a described later and a conductive material may be used. Further, for the conductor 305b, a conductive material that can be used for the conductor 360b described later may be used. In the transistor 300, the conductor 305 shows a configuration in which the conductor 305a, the conductor 305b, and the conductor 305c are laminated, but the present invention is not limited to this. For example, the conductor 305 may be provided in a single-layer, two layer or four-layer or more laminated structure.

[0469] The insulator 322 and the insulator 324 function as a gate insulating film.

[0470] The insulator 322 preferably has a function of suppressing the diffusion of hydrogen (for example, at least one of a hydrogen atom, a hydrogen molecule, etc.). Further, the insulator 322 preferably has a function of suppressing the diffusion of oxygen (for example, at least one of an oxygen atom, an oxygen molecule, etc.). For example, the insulator 322 preferably has a function of suppressing the diffusion of one or both of hydrogen and oxygen more than the insulator 324. As the insulator 322, an insulator containing one or both of oxides of aluminum and hafnium, which are insulating materials, may be used. As the insulator, aluminum oxide, hafnium oxide

[0471] ​​​​​​It is preferable to use an oxide containing mu, aluminum, and hafnium (hafnium aluminate), etc. Further, as the insulator 322, a barrier insulating film that can be used for the above-described insulator 314, etc. may be used.

[0472] For the insulator 324, silicon oxide, silicon oxynitride, etc. may be appropriately used. By providing the oxygen-containing insulator 324 in contact with the oxide 330, oxygen vacancies in the oxide 330 can be reduced, and the reliability of the transistor 300 can be improved. Further, the insulator 324 is preferably processed into an island shape so as to overlap with the oxide 330a. In this case, the insulator 375 comes into contact with the side surface of the insulator 324 and the upper surface of the insulator 322. Thereby, the insulator 324 and the insulator 380 can be separated by the insulator 375, so that oxygen contained in the insulator 380 diffuses into the insulator 324, and it is possible to suppress the oxygen in the insulator 324 from becoming excessive.

[0473] Note that the insulator 322 and the insulator 324 may have a laminated structure of two or more layers. In that case, it is not limited to a laminated structure made of the same material, and a laminated structure made of different materials may also be used. In FIG. 21(B), etc., a configuration in which the insulator 324 is formed in an island shape so as to overlap with the oxide 330a has been shown, but the present invention is not limited to this. If the amount of oxygen contained in the insulator 324 can be appropriately adjusted, similar to the insulator 322, the insulator 324 may not be patterned.

[0474] The oxide 343a and the oxide 343b are provided on the oxide 330b. The oxide 34 3a and the oxide 343b are provided separately with the conductor 360 interposed therebetween. The oxide 343 (the oxide 343a and the oxide 343b) preferably has a function of suppressing oxygen permeation. By disposing the oxide 343 having a function of suppressing oxygen permeation between the conductor 342 functioning as a source electrode or a drain electrode and the oxide 330b, it is preferable because the electrical resistance between the conductor 342 and the oxide 330b is reduced. If the electrical resistance between the conductor 342 and the oxide 330b can be sufficiently reduced, the configuration without providing the oxide 343 may be adopted. As the oxide 343, a metal oxide containing the element M may be used. In particular, as the element M, aluminum, gallium, yttrium, or tin may be used. The oxide 343 preferably has a higher concentration of the element M than the oxide 330b. Further, as the oxide 343, gallium oxide may be used. Further, as the oxide 343, a metal oxide such as an In-M-Zn oxide may be used. Specifically, in the metal oxide used for the oxide 343, the atomic ratio of the element M to In is preferably larger than the atomic ratio of the element M to In in the metal oxide used for the oxide 330b. The film thickness of the oxide 343 is preferably 0.5 nm or more and 5 nm or less, more preferably 1 nm or more and 3 nm or less, and still more preferably 1 nm or more and 2 nm or less. If the electrical resistance between the conductor 342 and the oxide 330b can be sufficiently reduced, the configuration without providing the oxide 343 may be adopted.

[0475] As the oxide 343, a metal oxide containing the element M may be used. In particular, as the element M, aluminum, gallium, yttrium, or tin may be used. The oxide 343 preferably has a higher concentration of the element M than the oxide 330b. Further, as the oxide 343, gallium oxide may be used. Further, as the oxide 343, a metal oxide such as an In-M-Zn oxide may be used. Specifically, in the metal oxide used for the oxide 343, the atomic ratio of the element M to In is preferably larger than the atomic ratio of the element M to In in the metal oxide used for the oxide 330b. The film thickness of the oxide 343 is preferably 0.5 nm or more and 5 nm or less, more preferably 1 nm or more and 3 nm or less, and still more preferably 1 nm or more and 2 nm or less. As the oxide 343, a metal oxide containing the element M may be used. In particular, as the element M, aluminum, gallium, yttrium, or tin may be used. The oxide 343 preferably has a higher concentration of the element M than the oxide 330b. Further, as the oxide 343, gallium oxide may be used. Further, as the oxide 343, a metal oxide such as an In-M-Zn oxide may be used. Specifically, in the metal oxide used for the oxide 343, the atomic ratio of the element M to In is preferably larger than the atomic ratio of the element M to In in the metal oxide used for the oxide 330b. The film thickness of the oxide 343 is preferably 0.5 nm or more and 5 nm or less, more preferably 1 nm or more and 3 nm or less, and still more preferably 1 nm or more and 2 nm or less. As the oxide 343, a metal oxide containing the element M may be used. In particular, as the element M, aluminum, gallium, yttrium, or tin may be used. The oxide 343 preferably has a higher concentration of the element M than the oxide 330b. Further, as the oxide 343, gallium oxide may be used. Further, as the oxide 343, a metal oxide such as an In-M-Zn oxide may be used. Specifically, in the metal oxide used for the oxide 343, the atomic ratio of the element M to In is preferably larger than the atomic ratio of the element M to In in the metal oxide used for the oxide 330b. The film thickness of the oxide 343 is preferably 0.5 nm or more and 5 nm or less, more preferably 1 nm or more and 3 nm or less, and still more preferably 1 nm or more and 2 nm or less. As the oxide 343, a metal oxide containing the element M may be used. In particular, as the element M, aluminum, gallium, yttrium, or tin may be used. The oxide 343 preferably has a higher concentration of the element M than the oxide 330b. Further, as the oxide 343, gallium oxide may be used. Further, as the oxide 343, a metal oxide such as an In-M-Zn oxide may be used. Specifically, in the metal oxide used for the oxide 343, the atomic ratio of the element M to In is preferably larger than the atomic ratio of the element M to In in the metal oxide used for the oxide 330b. The film thickness of the oxide 343 is preferably 0.5 nm or more and 5 nm or less, more preferably 1 nm or more and 3 nm or less, and still more preferably 1 nm or more and 2 nm or less. As the oxide 343, a metal oxide containing the element M may be used. In particular, as the element M, aluminum, gallium, yttrium, or tin may be used. The oxide 343 preferably has a higher concentration of the element M than the oxide 330b. Further, as the oxide 343, gallium oxide may be used. Further, as the oxide 343, a metal oxide such as an In-M-Zn oxide may be used. Specifically, in the metal oxide used for the oxide 343, the atomic ratio of the element M to In is preferably larger than the atomic ratio of the element M to In in the metal oxide used for the oxide 330b. The film thickness of the oxide 343 is preferably 0.5 nm or more and 5 nm or less, more preferably 1 nm or more and 3 nm or less, and still more preferably 1 nm or more and 2 nm or less. As the oxide 343, a metal oxide containing the element M may be used. In particular, as the element M, aluminum, gallium, yttrium, or tin may be used. The oxide 343 preferably has a higher concentration of the element M than the oxide 330b. Further, as the oxide 343, gallium oxide may be used. Further, as the oxide 343, a metal oxide such as an In-M-Zn oxide may be used. Specifically, in the metal oxide used for the oxide 343, the atomic ratio of the element M to In is preferably larger than the atomic ratio of the element M to In in the metal oxide used for the oxide 330b. The film thickness of the oxide 343 is preferably 0.5 nm or more and 5 nm or less, more preferably 1 nm or more and 3 nm or less, and still more preferably 1 nm or more and 2 nm or less. As the oxide 343, a metal oxide containing the element M may be used. In particular, as the element M, aluminum, gallium, yttrium, or tin may be used. The oxide 343 preferably has a higher concentration of the element M than the oxide 330b. Further, as the oxide 343, gallium oxide may be used. Further, as the oxide 343, a metal oxide such as an In-M-Zn oxide may be used. Specifically, in the metal oxide used for the oxide 343, the atomic ratio of the element M to In is preferably larger than the atomic ratio of the element M to In in the metal oxide used for the oxide 330b. The film thickness of the oxide 343 is preferably 0.5 nm or more and 5 nm or less, more preferably 1 nm or more and 3 nm or less, and still more preferably 1 nm or more and 2 nm or less. As the oxide 343, a metal oxide containing the element M may be used. In particular, as the element M, aluminum, gallium, yttrium, or tin may be used. The oxide 343 preferably has a higher concentration of the element M than the oxide 330b. Further, as the oxide 343, gallium oxide may be used. Further, as the oxide 343, a metal oxide such as an In-M-Zn oxide may be used. Specifically, in the metal oxide used for the oxide 343, the atomic ratio of the element M to In is preferably larger than the atomic ratio of the element M to In in the metal oxide used for the oxide 330b. The film thickness of the oxide 343 is preferably 0.5 nm or more and 5 nm or less, more preferably 1 nm or more and 3 nm or less, and still more preferably 1 nm or more and 2 nm or less. As the oxide 343, a metal oxide containing the element M may be used. In particular, as the element M, aluminum, gallium, yttrium, or tin may be used. The oxide 343 preferably has a higher concentration of the element M than the oxide 330b. Further, as the oxide 343, gallium oxide may be used. Further, as the oxide 343, a metal oxide such as an In-M-Zn oxide may be used. Specifically, in the metal oxide used for the oxide 343, the atomic ratio of the element M to In is preferably larger than the atomic ratio of the element M to In in the metal oxide used for the oxide 330b. The film thickness of the oxide 343 is preferably 0.5 nm or more and 5 nm or less, more preferably 1 nm or more and 3 nm or less, and still more preferably 1 nm or more and 2 nm or less.

[0476] The conductor 342a is preferably provided in contact with the upper surface of the oxide 343a, and the conductor 342b is preferably provided in contact with the upper surface of the oxide 343b. The conductor 342a and the conductor 342b each function as a source electrode or a drain electrode of the transistor 300. The conductor 342a is preferably provided in contact with the upper surface of the oxide 343a, and the conductor 342b is preferably provided in contact with the upper surface of the oxide 343b. The conductor 342a and the conductor 342b each function as a source electrode or a drain electrode of the transistor 300. The conductor 342a and the conductor 342b each function as a source electrode or a drain electrode of the transistor 300.

[0477] ​ As the conductor 342 (conductor 342a and conductor 342b), for example, nitrides containing tantalum, nitrides containing titanium, nitrides containing molybdenum, nitrides containing tungsten , nitrides containing tantalum and aluminum, nitrides containing titanium and aluminum, etc. are preferably used. In one aspect of the present invention, nitrides containing tantalum are particularly preferred. Further, for example, ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, oxides containing lanthanum and nickel, etc. may be used. Since these materials are conductive materials that are difficult to oxidize or materials that maintain conductivity even when absorbing oxygen, they are preferable. Also, it is preferable that a curved surface is not formed between the side surface and the upper surface of the conductor 342. By making the conductor 342 such that the curved surface is not formed, the cross-sectional area of the conductor 342 in the cross-section in the channel width direction, as shown in Fig. 21(D), can be increased.

[0478] As a result, the conductivity of the conductor 342 can be increased, and the on-current of the transistor 300 can be increased.

[0479] The insulator 371a is provided in contact with the upper surface of the conductor 342a, and the insulator 371b is provided in contact with the upper surface of the conductor 342b.

[0480] The insulator 375 is provided in contact with the upper surface of the insulator 322, the side surface of the insulator 324, the side surface of the oxide 330a, the side surface of the oxide 330b, the side surface of the oxide 343, the side surface of the conductor 342, and the side surface and the upper surface of the insulator 371. The insulator 375 has an opening formed in the region where the insulator 350 and the conductor 360 are provided.

[0481] Within the region sandwiched between the insulator 312 and the insulator 375, it has a function of capturing impurities such as hydrogen By providing the insulator 314, the insulator 371, and the insulator 375, which have the function of capturing impurities such as hydrogen contained in the insulator 324 or the insulator 316, etc., the amount of hydrogen in the region can be made a constant value. In this case, it is preferable that the insulator 314, the insulator 371, and the insulator 375 contain aluminum oxide with an amorphous structure . .

[0482] The insulator 350 has the insulator 350a and the insulator 350b on the insulator 350a, and functions as a gate insulating film. Also, the insulator 350a is preferably disposed in contact with the upper surface of the oxide 330b, the side surface of the oxide 343 , the side surface of the conductor 342, the side surface of the insulator 371, the side surface of the insulator 375, and the side surface of the insulator 380. Also, the film thickness of the insulator 350 is preferably 1 nm or more and 20 nm or less . .

[0483] The insulator 350a can be made of silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride , silicon oxide added with fluorine, silicon oxide added with carbon, silicon oxide added with carbon and nitrogen , silicon oxide having pores, etc. In particular, silicon oxide and silicon oxynitride are preferable because they are stable against heat. The insulator 350a , similar to the insulator 324, preferably has a reduced concentration of impurities such as water and hydrogen

[0484] The insulator 350a is preferably formed using an insulator that releases oxygen upon heating, and the insulator 350b is preferably formed using an insulator having a function of suppressing oxygen diffusion. In this way By adopting such a structure, the oxygen contained in the insulator 350a can be prevented from diffusing into the conductor 360. That is, a decrease in the amount of oxygen supplied to the oxide 330 can be suppressed. In addition, oxidation of the conductor 360 by the oxygen contained in the insulator 350a can be suppressed. For example, the insulator 350b can be provided using the same material as the insulator 322.

[0485] Specifically, as the insulator 350b, a metal oxide containing one or more selected from hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, magnesium, etc., or a metal oxide that can be used as the oxide 330 can be used. In particular, it is preferable to use an insulator containing one or both of aluminum and hafnium oxides. As the insulator, aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate), etc. are preferably used. Also, the film thickness of the insulator 350b is preferably 0.5 nm or more and 3.0 nm or less, and more preferably 1.0 nm or more and 1.5 nm or less.

[0486] In FIGS. 21(B) and 21(C), the insulator 350 is illustrated in a two-layer stacked structure, but the present invention is not limited thereto. The insulator 350 may be a single layer or a stacked structure of three or more layers.

[0487] The conductor 360 is provided on the insulator 350b and functions as the first gate electrode of the transistor 300. The conductor 360 includes a conductor 360a and is disposed on the conductor 360a. ​​​​​​​​​​​​It is preferable to have the provided conductor 360b. For example, the conductor 360a is preferably arranged to wrap around the bottom and side surfaces of the conductor 360b. Also, as shown in FIGS. 21(B) and 21(C), the upper surface of the conductor 360 substantially coincides with the upper surface of the insulator 350 . Note that in FIGS. 21(B) and 21(C), the conductor 360 is shown as a two-layer structure of the conductor 360 a and the conductor 360b, but it may also be a single-layer structure or a stacked structure of three or more layers .

[0488] It is preferable to use a conductive material for the conductor 360a that has a function of suppressing the diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules, copper atoms. Or, it is preferable to use a conductive material that has a function of suppressing the diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.) .

[0489] Also, since the conductor 360a has a function of suppressing the diffusion of oxygen, it is possible to suppress the conductor 360b from being oxidized by the oxygen contained in the insulator 350 and the conductivity from decreasing. As a conductive material having a function of suppressing the diffusion of oxygen, for example, it is preferable to use titanium, titanium nitride, tantalum, tantalum nitride, ruthenium, ruthenium oxide, etc. It is preferable.

[0490] Also, since the conductor 360 also functions as a wiring, it is preferable to use a conductor with high conductivity. For example, for the conductor 360b, a conductive material mainly composed of tungsten, copper, or aluminum can be used. Also, the conductor 360b may have a laminated structure , and for example, it may have a laminated structure of titanium or titanium nitride and the above conductive material.

[0491] Also, in the transistor 300, the conductor 360 is self-alignedly formed so as to fill an opening formed in an insulator 380 or the like. By forming the conductor 360 in this way, the conductor 360 can be surely arranged in the region between the conductor 342a and the conductor 342b without alignment. Also, as shown in FIG. 21(C), in the channel width direction of the transistor 300, when the bottom surface of the insulator 322 is used as a reference, the height of the bottom surface of the region where the conductor 360 does not overlap with the oxide 330b is preferably lower than the height of the bottom surface of the oxide 330b. By configuring the conductor 360 that functions as a gate electrode to cover the side surface and the upper surface of the channel formation region of the oxide 330b via an insulator 350 or the like, the electric field of the conductor 360 can be easily applied to the entire channel formation region of the oxide 330b. Therefore, the on-current of the transistor 300 can be increased and the frequency characteristics can be improved. The difference between the height of the bottom surface of the conductor 360 and the height of the bottom surface of the oxide 330b in the region where the oxide 330a and the oxide 330b do not overlap with the conductor 360, when the bottom surface of the insulator 322 is used as a reference, is 0 nm or more and 100 nm or less, preferably 3 nm or more and 50 nm or less, more preferably 5 nm or more and 20 nm or less. Also, in the region between the conductor 342a and the conductor 342b, the conductor 360 can be surely arranged without alignment.

[0492] Also, as shown in FIG. 21(C), in the channel width direction of the transistor 300, when the bottom surface of the insulator 322 is used as a reference, the height of the bottom surface of the region where the conductor 360 does not overlap with the oxide 330b is preferably lower than the height of the bottom surface of the oxide 330b. When the bottom surface of the insulator 322 is used as a reference, the height of the bottom surface of the region where the conductor 360 does not overlap with the oxide 330b is preferably lower than the height of the bottom surface of the oxide 330b. When the bottom surface of the insulator 322 is used as a reference, the height of the bottom surface of the region where the conductor 360 does not overlap with the oxide 330b is preferably lower than the height of the bottom surface of the oxide 330b. By configuring the conductor 360 that functions as a gate electrode to cover the side surface and the upper surface of the channel formation region of the oxide 330b via an insulator 350 or the like, the electric field of the conductor 360 can be easily applied to the entire channel formation region of the oxide 330b. By configuring the conductor 360 that functions as a gate electrode to cover the side surface and the upper surface of the channel formation region of the oxide 330b via an insulator 350 or the like, the electric field of the conductor 360 can be easily applied to the entire channel formation region of the oxide 330b. Therefore, the on-current of the transistor 300 can be increased and the frequency characteristics can be improved. Therefore, the on-current of the transistor 300 can be increased and the frequency characteristics can be improved. The difference between the height of the bottom surface of the conductor 360 and the height of the bottom surface of the oxide 330b in the region where the oxide 330a and the oxide 330b do not overlap with the conductor 360, when the bottom surface of the insulator 322 is used as a reference, is 0 nm or more and 100 nm or less, preferably 3 nm or more and 50 nm or less, more preferably 5 nm or more and 20 nm or less. The difference between the height of the bottom surface of the conductor 360 and the height of the bottom surface of the oxide 330b in the region where the oxide 330a and the oxide 330b do not overlap with the conductor 360, when the bottom surface of the insulator 322 is used as a reference, is 0 nm or more and 100 nm or less, preferably 3 nm or more and 50 nm or less, more preferably 5 nm or more and 20 nm or less. The difference between the height of the bottom surface of the conductor 360 and the height of the bottom surface of the oxide 330b in the region where the oxide 330a and the oxide 330b do not overlap with the conductor 360, when the bottom surface of the insulator 322 is used as a reference, is 0 nm or more and 100 nm or less, preferably 3 nm or more and 50 nm or less, more preferably 5 nm or more and 20 nm or less. The difference between the height of the bottom surface of the conductor 360 and the height of the bottom surface of the oxide 330b in the region where the oxide 330a and the oxide 330b do not overlap with the conductor 360, when the bottom surface of the insulator 322 is used as a reference, is 0 nm or more and 100 nm or less, preferably 3 nm or more and 50 nm or less, more preferably 5 nm or more and 20 nm or less.

[0493] The insulator 380 is provided on the insulator 375, and an opening is formed in the region where the insulator 350 and the conductor 360 are provided. Also, the upper surface of the insulator 380 may be planarized. In this case, the upper surface of the insulator 380 preferably substantially coincides with the upper surface of the insulator 350 and the upper surface of the conductor 360. The insulator 380 is provided on the insulator 375, and an opening is formed in the region where the insulator 350 and the conductor 360 are provided. Also, the upper surface of the insulator 380 may be planarized. In this case, the upper surface of the insulator 380 preferably substantially coincides with the upper surface of the insulator 350 and the upper surface of the conductor 360.

[0494] The insulator 382 is disposed on the top surface of the insulator 380, the top surface of the insulator 350, and the top surface of the conductor 360. The insulator 382 is provided in contact with the insulator 380. It is preferable that the insulating film functions as a barrier insulating film that prevents impurities such as hydrogen from diffusing into the semiconductor. It is preferable that the insulator 382 has a function of capturing oxygen. It is preferable that the insulator 382 functions as a barrier insulating film. In the region between the insulator 312 and the insulator 383, an insulator such as minium may be used. An insulator 382 having a function of capturing impurities such as hydrogen is provided in contact with the insulator 380. By this, impurities such as hydrogen contained in the insulator 380 are captured, and the In particular, the amount of hydrogen can be made constant by using an amorphous structure as the insulator 382. By using aluminum oxide having this structure, hydrogen can be captured or fixed more effectively. This is preferable because it may be possible to obtain a transistor 3 having good characteristics and high reliability. 00, and a semiconductor device can be manufactured.

[0495] The conductor 340a and the conductor 340b are mainly composed of tungsten, copper, or aluminum. It is preferable to use a conductive material that has a high conductivity. When the conductor 340 has a layered structure, the conductor 340 is in contact with the insulator 341. Conductive materials that have the function of suppressing the permeation of impurities such as water and hydrogen are used for the conductor. For example, the conductive material that can be used for the conductor 360a described above can be used. That's good.

[0496] The insulators 341a and 341b may be, for example, silicon nitride or aluminum oxide. An insulator such as silicon nitride oxide or silicon oxynitride may be used. b is provided in contact with the insulator 383, the insulator 382, ​​and the insulator 371. Impurities such as water and hydrogen contained in the conductor 380 are absorbed by the conductor 340a and the conductor 340b. This can prevent the oxide 330 from being mixed with the oxide 330.

[0497] Also, the conductive material 340a and the conductive material 340b are in contact with each other to function as wiring. Conductor 346 (conductor 346a and conductor 346b) may be arranged. 6 may be made of a conductive material mainly composed of tungsten, copper, or aluminum. The conductor may also have a laminated structure, for example titanium or titanium nitride. The conductive material may be a laminate of an insulating material and the conductive material. It may be configured to be implanted in the mouth.

[0498] As a result, a semiconductor device having good electrical characteristics can be provided. In addition, a semiconductor device that can be miniaturized or highly integrated can be provided. In addition, a semiconductor device with low power consumption can be provided. .

[0499] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. .

[0500] (Embodiment 10) In this embodiment, the semiconductor device can be used for the OS transistor described in the above embodiment. Metal oxides (hereinafter, also referred to as oxide semiconductors) will be described.

[0501] The metal oxide preferably contains at least indium or zinc. Particularly preferably indium and zinc. In addition to these, it is preferable that aluminum, gallium, yttrium, tin, etc. are included. Also, one selected from boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc., or a plurality of these may be included.

[0502] <Classification of crystal structures> First, the classification of crystal structures in the oxide semiconductor will be described with reference to FIG. 22(A). FIG. 22(A) is a diagram for explaining the classification of the crystal structure of an oxide semiconductor, typically an IGZO (metal oxide containing In, Ga, and Zn).

[0503] As shown in FIG. 22(A), the oxide semiconductor is roughly classified into "Amorphous", "Crystalline", and "Crystal". Among "Amorphous", completely amorphous is included. Among "Crystalline", CAAC (c-axis-aligned crystalline), nc (nanocrystalline), and CAC (cloud-aligned composite) are included. Note that single crystal, poly crystal, and completely amorphous are excluded from the classification of "Crystalline". In addition, "Crystal" includes single crystal and poly c rystal.

[0504] Note that the structure within the thick frame shown in Fig. 22(A) is in an intermediate state between "Amorphous" and "C rystal", and belongs to a new boundary region (New cryst alline phase). That is, this structure is completely different from "Amorphous", which is energetically unstable, and "Crystal". It can be rephrased as a structure completely different from them.

[0505] Note that the crystal structure of the film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum. Here, the XRD spectrum obtained from the grazing-incidence XRD (GIXD) measurement of the CAAC-IGZO film classified as "Crystalline" is shown in Fig. 22(B). Note that the GIXD method is also called the thin film method or the Seemann-Bohlin method. Hereinafter, the XRD spectrum obtained from the GIXD measurement shown in Fig. 22(B) will be simply referred to as the XRD spectrum. Note that the composition of the CAAC-IGZO film shown in Fig. 22( B) is in the vicinity of In:Ga:Zn = 4:2:3 [atomic ratio]. Also, the thickness of the CAAC-IGZO film shown in Fig. 22(B) is 500 nm. As shown in Fig. 22(B), in the XRD spectrum of the CAAC-IGZO film, a peak indicating clear crystallinity is detected. Specifically, in the XRD spectrum of the CAAC-IGZO film, a peak indicating c-axis orientation is detected near 2θ = 31°. Note that shown in Fig. 22(B).

[0506] As shown in Fig. 22(B), in the XRD spectrum of the CAAC-IGZO film, a peak indicating clear crystallinity is detected. Specifically, in the XRD spectrum of the CAAC-IGZO film, a peak indicating c-axis orientation is detected near 2θ = 31°. Note that shown in Fig. 22(B). ​​As such, the peak near 2θ = 31° is asymmetric about the axis of the angle at which the peak intensity was detected. It is.

[0507] Also, the crystal structure of the film or substrate can be evaluated by the diffraction pattern (also referred to as the nano-beam electron diffraction pattern) observed by the nano-beam electron diffraction method (NBED: Nano Beam Electron Diffraction). The diffraction pattern of the CAAC-IGZO film is shown in Fig. 22(C). Fig. 22(C) is the diffraction pattern observed by NBED in which the electron beam is incident parallel to the substrate. Note that the composition of the CAAC-IGZO film shown in Fig. 22(C) is near In:Ga:Zn = 4:2:3 [atomic ratio]. Also, in the nano-beam electron diffraction method, electron diffraction is performed with a probe diameter of 1 nm. Electron Diffraction) is observed. It can also be called an electron diffraction pattern.) As shown in Fig. 22(C), in the diffraction pattern of the CAAC-IGZO film, a plurality of spots indicating c-axis orientation are observed. NBED incident parallel to the substrate. The composition of the CAAC-IGZO film shown in Fig. 22(C) is near In:Ga:Zn = 4:2:3 [atomic ratio]. Also, In the nano-beam electron diffraction method, electron diffraction is performed with a probe diameter of 1 nm.

[0508] As shown in Fig. 22(C), in the diffraction pattern of the CAAC-IGZO film, a plurality of spots indicating c-axis orientation are observed. Are observed.

[0509] <<Structure of Oxide Semiconductor>> Note that when focusing on the crystal structure, the oxide semiconductor may be classified differently from Fig. 22(A). For example, the oxide semiconductor can be divided into single-crystalline oxide semiconductors and other non-single-crystalline oxide semiconductors. Examples of non-single-crystalline oxide semiconductors include the above-mentioned CAAC-OS and nc-OS. Also, non-single-crystalline oxide semiconductors include polycrystalline oxide semiconductors, pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), amorphous oxide semiconductors, and the like. For example, the oxide semiconductor is divided into single-crystalline oxide semiconductors and other non-single-crystalline oxide semiconductors. Semiconductors. Non-single-crystalline oxide semiconductors include, for example, the above-mentioned CAAC-OS and nc-OS. S, and nc-OS. Also, non-single-crystalline oxide semiconductors include polycrystalline oxide semiconductors, pseudo- Similar to amorphous oxide semiconductors (a-like OS: amorphous-like oxid e semiconductor), amorphous oxide semiconductors, and the like.

[0510] Here, regarding the details of the above-mentioned CAAC-OS, nc-OS, and a-like OS, will be described.

[0511] [CAAC-OS] CAAC-OS has a plurality of crystal regions, and the plurality of crystal regions are oxide semiconductors in which the c-axis is oriented in a specific direction. Note that the specific direction is the thickness direction of the CAAC-OS film, the normal direction of the surface on which the CAAC-OS film is formed, or the normal direction of the surface of the CAAC-OS film. Also, the crystal region is a region having periodicity in the atomic arrangement. Note that when the atomic arrangement is regarded as a lattice arrangement, the crystal region is also a region where the lattice arrangement is aligned. Further, CAAC-O S has a region where a plurality of crystal regions are connected in the a-b plane direction, and this region may have strain. Note that the strain is a portion where the direction of the lattice arrangement changes between a region where the lattice arrangement is aligned and another region where the lattice arrangement is aligned in the region where the plurality of crystal regions are connected. That is, CAAC-OS is an oxide semiconductor in which the c-axis is oriented and there is no obvious orientation in the a-b plane direction. Note that each of the plurality of crystal regions is composed of one or a plurality of minute crystals (crystals having a maximum diameter of less than 10 nm). When the crystal region is composed of one minute crystal, the maximum diameter of the crystal region is less than 10 nm. Also, when the crystal region is composed of a number of minute crystals, the size of the crystal region may be on the order of several tens of nm. In In-M-Zn oxide (element M is one or more selected from aluminum, gallium, yttrium, tin, titanium, etc.), CAAC-OS has a layer containing indium (In) and oxygen (hereinafter, In layer), and elements M, zinc (Zn), and oxygen

[0512] Note that each of the plurality of crystal regions is composed of one or a plurality of minute crystals (crystals having a maximum diameter of less than 10 nm). When the crystal region is composed of one minute crystal, the maximum diameter of the crystal region is less than 10 nm. Also, when the crystal region is composed of a number of minute crystals, the size of the crystal region may be on the order of several tens of nm. In In-M-Zn oxide (element M is one or more selected from aluminum, gallium, yttrium, tin,

[0513] titanium, etc.), CAAC-OS has a layer containing indium (In) and oxygen (hereinafter, In layer), and elements M, zinc (Zn), and oxygen selected from among, or a plurality of kinds), CAAC-OS has a layer containing indium (In) and oxygen (hereinafter referred to as the In layer), and elements M, zinc (Zn), and oxygen selected from among, or a plurality of kinds), CAAC-OS has a layer containing indium (In) and oxygen (hereinafter referred to as the In layer), and elements M, zinc (Zn), and oxygen A layer having the following (hereinafter referred to as the (M, Zn) layer) is laminated to form a layered crystal structure (also referred to as a layered structure). ) tends to have. Note that indium and element M are mutually substitutable. Therefore, Indium may be contained in the (M, Zn) layer. Also, element M may be contained in the In layer . Note that Zn may also be contained in the In layer. The said layered structure is, for example, Observed as a lattice image in a high-resolution TEM image.

[0514] When performing structural analysis on the CAAC-OS film using, for example, an XRD apparatus, in the out-of-plane XRD measurement using the θ / 2θ scan , a peak indicating c-axis orientation is detected at 2θ = 31° or in the vicinity thereof. Note that the position of the peak indicating c-axis orientation (the value of 2θ) May vary depending on the type and composition of the metal elements constituting CAAC-OS.

[0515] Also, for example, in the electron diffraction pattern of the CAAC-OS film, a plurality of bright spots (spots ) are observed. Note that one spot and another spot are observed at point-symmetric positions with the spot of the incident electron beam transmitted through the sample (also referred to as the direct spot) as the center of symmetry .

[0516] When observing the crystal region from the said specific direction, the lattice arrangement within the said crystal region is based on a hexagonal lattice, But the unit cell is not always a regular hexagon and may be a non-regular hexagon. Also, in the said Strain, there may be lattice arrangements such as pentagons and heptagons. Note that in CAAC- OS, even in the vicinity of the strain, no clear grain boundaries can be confirmed . That is, the formation of grain boundaries is suppressed by the strain of the lattice arrangement. ​It can be understood that this is because CAAC-OS has a sparse arrangement of oxygen atoms in the a-b plane direction and the bond distance between atoms changes due to the substitution of metal atoms, etc., so it is considered that it can tolerate strain. This is considered to be because it can tolerate strain due to factors such as the sparse arrangement of oxygen atoms in the a-b plane direction and the change in the bond distance between atoms caused by the substitution of metal atoms. It is considered that this is because it can tolerate strain.

[0517] Note that the crystal structure in which distinct grain boundaries are confirmed is so-called polycrystal. Grain boundaries serve as recombination centers, and carriers are likely to be captured, leading to a decrease in the drain current of the transistor, a decrease in the field-effect mobility, etc. Therefore, CAAC-OS in which distinct grain boundaries are not confirmed is one of the crystalline oxides having a crystal structure suitable for the semiconductor layer of the transistor. To form CAAC-OS, a configuration having Zn is preferable. For example, In-Zn oxide and In-Ga-Zn oxide are suitable because they can suppress the generation of grain boundaries more than In oxide. It is called a polycrystal. Grain boundaries serve as recombination centers, and carriers are likely to be captured, leading to a decrease in the drain current of the transistor, a decrease in the field-effect mobility, etc. Therefore, CAAC-OS, in which distinct grain boundaries are not confirmed, is one of the crystalline oxides having a crystal structure suitable for the semiconductor layer of the transistor. It is one of the crystalline oxides having a crystal structure suitable for the semiconductor layer of the transistor. To form CAAC-OS, a configuration having Zn is preferable. For example, In-Zn oxide and In-Ga-Zn oxide are suitable because they can suppress the generation of grain boundaries more than In oxide. They are suitable because they can suppress the generation of grain boundaries more than In oxide.

[0518] CAAC-OS is an oxide semiconductor with high crystallinity and no distinct grain boundaries confirmed. Therefore, it can be said that in CAAC-OS, a decrease in electron mobility due to grain boundaries is unlikely to occur. In addition, the crystallinity of the oxide semiconductor may decrease due to the incorporation of impurities or the generation of defects, etc. Therefore, CAAC-OS can also be said to be an oxide semiconductor with few impurities and defects (such as oxygen deficiencies). Therefore, the physical properties of the oxide semiconductor having CAAC-OS are stable. Therefore, the oxide semiconductor having CAAC-OS is heat-resistant and highly reliable. In addition, CAAC-OS is also stable against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, when CAAC-OS is used for the OS transistor, it becomes possible to expand the degree of freedom in the manufacturing process. It becomes possible to expand the degree of freedom in the manufacturing process.

[0519] [nc-OS] nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). In other words, nc-OS has minute crystals. Note that since the size of the minute crystals is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystals are also referred to as nanocrystals. Also, nc-OS does not show regularity in the crystal orientation among different nanocrystals. Therefore, no orientation is observed in the entire film. Thus, depending on the analysis method, nc-OS may not be distinguishable from a-like OS or an amorphous oxide semiconductor. For example, when performing structural analysis on an nc-OS film using an XRD apparatus, no peak indicating crystallinity is detected in the Out-of-plane XRD measurement using θ / 2θ scan. Also, for an nc-OS film when performing electron beam diffraction (also referred to as limited field of view electron beam diffraction) using an electron beam with a probe diameter larger than that of the nanocrystals (for example, 50 nm or more), a diffraction pattern like a halo pattern is observed. On the other hand, when performing electron beam diffraction (also referred to as nanobeam electron beam diffraction) on an nc-OS film using an electron beam with a probe diameter close to or smaller than that of the nanocrystals (for example, 1 nm or more and 30 nm or less), an electron beam diffraction pattern in which a number of spots are observed within a ring-shaped region centered on a direct spot may be obtained.

[0520] [a-like OS] a-like OS is an oxide semiconductor having a structure between nc-OS and an amorphous oxide semiconductor. a-like OS has a loose or low-density region. That is, a-like The OS has lower crystallinity compared to nc-OS and CAAC-OS. Also, a-like The OS has a higher hydrogen concentration in the film compared to nc-OS and CAAC-OS.

[0521] <<Constitution of Oxide Semiconductor>> Next, the details of the above-mentioned CAC-OS will be described. Note that CAC-OS relates to the material constitution herein.

[0522] [CAC-OS] CAC-OS is, for example, a constituent of a material in which the elements constituting the metal oxide are unevenly distributed in a size of 0.5 nm or more and 10 nm or less , preferably 1 nm or more and 3 nm or less, or in the vicinity thereof. In the following, in the metal oxide, one or more metal elements are unevenly distributed, and the region having the metal element is in a mixed state with a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof, and this state is also referred to as a mosaic state or a patch state.

[0523] Furthermore, CAC-OS is a configuration in which the material is separated into a first region and a second region to form a mosaic shape, and the first region is distributed in the film (hereinafter also referred to as a cloud shape). That is, CAC-OS is a composite metal oxide having a configuration in which the first region and the second region are mixed together.

[0524] Here, let the atomic ratios of In, Ga, and Zn to the metal elements constituting CAC-OS in In-Ga-Zn oxide be represented as [In], [Ga], and [Zn], respectively. For example, in CAC-OS in In-Ga-Zn oxide, the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film. Also, ​The second region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Or, for example, in the first region, [In] is larger than [In] in the second region, and [Ga] is smaller than [Ga] in the second region. Also, in the second region, [Ga] is larger than [Ga] in the first region, and [In is smaller than [In] in the first region.

[0525] Specifically, the above-mentioned first region is a region mainly composed of indium oxide, indium zinc oxide, etc. Also, the above-mentioned second region is a region mainly composed of gallium oxide, gallium zinc oxide, etc. That is, the above-mentioned first region can be referred to as a region mainly composed of In. Also, the above-mentioned second region can be referred to as a region mainly composed of Ga.

[0526] Note that there may be cases where a clear boundary cannot be observed between the above-mentioned first region and the second region.

[0527] For example, in CAC-OS of In-Ga-Zn oxide, by EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX: Energy Dispersive X-ray spectrosco py), it can be confirmed that the region mainly composed of In (the first region ) and the region mainly composed of Ga (the second region) are unevenly distributed and have a mixed structure.

[0528] When using CAC-OS in a transistor, the conductivity caused by the first region and the second region act complementarily to provide a switching function (On / The function of turning off can be imparted to CAC-OS. That is, CAC-OS is a material having a conductive function in a part of the material and an insulating function in a part of the material, and having a semiconductor function as a whole in the whole material. By separating the conductive function and the insulating function, both functions can be enhanced to the maximum extent. Therefore, by using CAC-OS in a transistor, a high on-current (I on ), a high field-effect mobility (μ), and a good switching operation can be realized.

[0529] Oxide semiconductors have various structures and each has different characteristics. In one aspect of the present invention, the oxide semiconductor may have two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, a-like OS, CA C-OS, nc-OS, and CAAC-OS.

[0530] <Transistor having an oxide semiconductor> Subsequently, the case of using the above oxide semiconductor in a transistor will be described.

[0531] By using the above oxide semiconductor in a transistor, a transistor with a high field-effect mobility can be realized. Also, a highly reliable transistor can be realized.

[0532] It is preferable to use an oxide semiconductor having a low carrier concentration in the transistor. For example, the carrier concentration of the oxide semiconductor is 1×10 17 cm -3 or less, preferably 1×10 15 cm -3 or less, more preferably 1×10 13 cm -3 or less, still more preferably 1×10 11 c m -3Hereinafter, more preferably, it is less than 1×10 10 cm -3 and more than 1×10 -9 cm -3 . When reducing the carrier concentration of the oxide semiconductor film, the impurity concentration in the oxide semiconductor film may be reduced and the density of defect levels may be reduced. In this specification and the like, when the impurity concentration is low and the density of defect levels is low, it is referred to as highly pure intrinsic or substantially highly pure intrinsic. Note that an oxide semiconductor with a low carrier concentration may sometimes be referred to as a highly pure intrinsic or substantially highly pure intrinsic oxide semiconductor.

[0533] In addition, since an oxide semiconductor film that is highly pure intrinsic or substantially highly pure intrinsic has a low density of defect levels, the density of trap levels may also be low.

[0534] In addition, the charge trapped in the trap levels of the oxide semiconductor may take a long time to disappear and may behave like a fixed charge. Therefore, a transistor in which a channel formation region is formed in an oxide semiconductor with a high trap level density may have unstable electrical characteristics.

[0535] Therefore, in order to stabilize the electrical characteristics of the transistor, it is effective to reduce the impurity concentration in the oxide semiconductor. In addition, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in the adjacent film. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon, and the like.

[0536] <Impurities> Here, the effects of various impurities in the oxide semiconductor will be described.

[0537] ​​​​​In an oxide semiconductor, when silicon or carbon, which is one of the Group 14 elements, is contained, the oxide forms defect levels in the semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (the concentration obtained by secondary ion mass spectrometry (SIMS: Secondary Ion Mass Spectrometry)) are set to 2×10 atoms / cm 18 or less, preferably 2×10 3 atoms / cm 17 or less. oms / cm 3

[0538] In addition, when an alkali metal or an alkaline earth metal is contained in the oxide semiconductor, defect levels may be formed and carriers may be generated. Therefore, a transistor using an oxide semiconductor containing an alkali metal or an alkaline earth metal tends to have normally-on characteristics. For this reason, the concentration of the alkali metal or the alkaline earth metal in the oxide semiconductor obtained by SIMS is set to 1×10 atoms / cm 18 or less, preferably 2×10 3 atoms / cm 16 or less. 3

[0539] In addition, when nitrogen is contained in the oxide semiconductor, carriers, electrons, are generated, and the carrier concentration increases, and it tends to become n-type. As a result, a transistor using an oxide semiconductor containing nitrogen tends to have normally-on characteristics. Or, when nitrogen is contained in the oxide semiconductor , trap levels may be formed. As a result, the electrical characteristics of the transistor may become unstable. For this reason, the nitrogen concentration in the oxide semiconductor obtained by SIMS is set to 5×10​​19 atoms / cm 3 less than, preferably 5×10 18 atom s / cm 3 or less, more preferably 1×10 18 atoms / cm 3 or less, even more preferably is 5×10 17 atoms / cm 3 or less.

[0540] In addition, since hydrogen contained in the oxide semiconductor reacts with oxygen bonded to metal atoms to form water , oxygen vacancies may be formed. When hydrogen enters these oxygen vacancies, electrons as carriers may be generated. Also, a part of the hydrogen may bond with oxygen bonded to metal atoms to generate electrons as carriers. Therefore, a transistor using an oxide semiconductor containing hydrogen tends to have normally-on characteristics. For this reason, it is preferable that hydrogen in the oxide semiconductor is reduced as much as possible. Specifically, in the oxide semiconductor, the hydrogen concentration obtained by SIM S is less than 1×10 atoms / cm 20 , preferably less than 1×1 3 0 atoms / cm 19 , more preferably less than 5×10 3 atoms / cm 18 , still more preferably less than 1×10 3 atoms / cm 18 or less. 3

[0541] Using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor

[0542] can impart stable electrical characteristics.

[0542] Note that this embodiment can be appropriately combined with other embodiments described in this specification .

[0543] (Embodiment 11) In this embodiment, a configuration example of an electronic device including a function panel according to an aspect of the present invention will be described .

[0544] Fig. 24(A) shows a perspective view of a glasses-type electronic device 5700. The electronic device 5700 includes a pair of display panels 5701, a pair of housings 5702, a pair of optical members 5703, a pair of mounting parts 5704, a frame 5707, nose pads 5708, and the like.

[0545] The electronic device 5700 can project the image shown on the display panel 5701 onto the display area 5706 of the optical member 5703. Further, since the optical member 5703 has translucency, the user can view the image displayed in the display area 5706 overlaid on the transmitted image visible through the optical member 5703. Therefore, the electronic device 5700 is an electronic device capable of AR display .

[0546] Further, one or both of the housings 5702 may be provided with a camera capable of imaging the front. The housing 5702 may also have a wireless communication device, and a video signal or the like can be supplied to the housing 5702 through the wireless communication device. Instead of or in addition to the wireless communication device, a connector capable of connecting a cable to which a video signal or a power potential is supplied may be provided. Further, by providing an acceleration sensor such as a gyro sensor in the housing 5702, the orientation of the user's head can be detected, and an image corresponding to the orientation can be displayed in the display area 570 6.

[0547] Further, one or both of the housings 5702 may be provided with a processor. The processor​​​​​​​​​ S has functions for controlling each component of the electronic device 5700, such as a camera, a wireless communication device, a pair of display panels 5701, etc., and functions for generating images, etc. The processor may have a function for generating a composite image for AR display.

[0548] In addition, data communication can be performed with an external device by the wireless communication device. For example, data transmitted from the outside is output to the processor, and the processor can also generate image data for AR display based on the data. Examples of data transmitted from the outside include, in addition to image data, data including biological information transmitted from a biological sensor device or the like.

[0549] Subsequently, with reference to FIG. 24(B), the method of projecting an image onto the display area 5706 of the electronic device 5700 will be described. Inside the housing 5702, a display panel 5701 is provided. In addition, a reflecting plate 5712 is provided on the optical member 5703, and a reflecting surface 5713 that functions as a half mirror is provided at a portion corresponding to the display area 5706 of the optical member 5703.

[0550] The light 5715 emitted from the display panel 5701 is reflected by the reflecting plate 5712 to the three sides of the optical member 570 3. Inside the optical member 5703, the light 5715 repeatedly undergoes total reflection at the end faces of the optical member 5703 and reaches the reflecting surface 5713, where an image is projected onto the reflecting surface 5713. As a result, the user can visually recognize both the light 5715 reflected by the reflecting surface 5713 and the transmitted light 5716 transmitted through the optical member 570 3 (including the reflecting surface 5713).

[0551] FIG. 24 shows an example in which the reflector 5712 and the reflecting surface 5713 each have a curved surface. This can increase the degree of freedom in optical design compared to the case where they are flat surfaces, and the thickness of the optical member 5703 can be reduced. Note that the reflector 5712 and the reflecting surface 5713 may be flat surfaces.

[0552] As the reflector 5712, a member having a mirror surface can be used, and it is preferable that the reflectance is high. Also, as the reflecting surface 5713, a half mirror using the reflection of a metal film may be used, but using a prism or the like that utilizes total reflection can increase the transmittance of the transmitted light 5716.

[0553] Here, the housing 5702 may have a lens between the display panel 5701 and the reflector 5712. At this time, it is preferable that the housing 5702 has a mechanism for adjusting the distance between the lens and the display panel 5701 and the angle between them. This enables focusing adjustment, image enlargement, reduction, etc. For example, one or both of the lens or the display panel 570 1 may be configured to be movable in the optical axis direction.

[0554] Also, it is preferable that the housing 5702 has a mechanism for adjusting the angle of the reflector 5712. By changing the angle of the reflector 5712, the position of the display area 5706 where the image is displayed can be changed. This enables the display area 5706 to be arranged at an optimal position according to the position of the user's eyes.

[0555] Also, a battery 5717 and a wireless power feeding module 5718 are provided in the housing 5702. It is preferable. By having the battery 5717, the electronic device 5700 can be used without separately connecting a battery, thus enhancing convenience. Moreover, by having the wireless power supply module 5718, it can be charged wirelessly, thereby enhancing convenience and design. Furthermore, compared with the case of charging wired by a connector or the like, the risk of failures such as contact failure can be reduced, and the reliability of the electronic device 5700 can be enhanced.

[0556] The housing 5702 is provided with a touch sensor module 5719. The touch sensor module 5719 has a function of detecting that the outer surface of the housing 5702 is touched. In FIG. 24(B), a state where the outer surface of the housing 5702 is touched with the finger 5720 is shown. With the touch sensor module 5719, tap operations, slide operations, etc. of the user can be detected, and various processes can be executed. For example, processes such as pausing and resuming a video by a tap operation can be executed, or processes such as fast forward and rewind by a slide operation can be executed. Also, by providing the touch sensor module 5719 on each of the two housings 5702, the range of operations can be widened.

[0557] As the touch sensor module 5719, various touch sensors can be applied. For example, various methods such as the capacitance method, the resistive film method, the infrared method, the electromagnetic induction method, the surface acoustic wave method, and the optical method can be adopted. In particular, it is preferable to apply a sensor of the capacitance method or the optical method to the touch sensor module 5719.

[0558] When using an optical touch sensor, a photoelectric conversion element can be used as the light receiving element. Examples of the photoelectric conversion element include those using an inorganic semiconductor in the active layer or those using an organic semiconductor.

[0559] The display panel 5701 can be applied with the display device or the functional panel according to an aspect of the present invention. Therefore, an electronic device 5700 capable of extremely high-precision display can be achieved.

[0560] This embodiment can be implemented in appropriate combination with at least a part of other embodiments described in this specification.

[0561] For example, in this specification and the like, when it is explicitly described that X and Y are connected, it is disclosed in this specification and the like that X and Y are electrically connected, X and Y are functionally connected, and X and Y are directly connected. Therefore, it is not limited to a predetermined connection relationship, for example, the connection relationship shown in the figure or the text, and those other than the connection relationship shown in the figure or the text are also disclosed in the figure or the text. Here, X and Y are assumed to be objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

[0562] Here, X and Y are assumed to be objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

[0563] As an example of the case where X and Y are directly connected, it is a case where an element (for example, a switch, a transistor, a capacitor element, an inductor, a resistor element, a diode, a display element, a light emitting element, a load, etc.) that enables electrical connection between X and Y is not connected between X and Y. and X and Y are connected without an element (e.g., a switch, a transistor, a capacitor element, an inductor, a resistor, a diode, a display element, a light-emitting element, a load, etc.) interposed therebetween. This is the case where X and Y are connected.

[0564] As an example of the case where X and Y are electrically connected, an element (e.g., a switch, a transistor, a capacitor element, an inductor, a resistor, a diode, a display element, a light-emitting element, a load, etc.) that enables the electrical connection between X and Y can be connected between X and Y by one or more. Note that the switch has a function of controlling on / off. That is, the switch becomes a conductive state (on state) or a non-conductive state (off state), and has a function of controlling whether to allow current to flow or not. Or, the switch has a function of selecting and switching a path through which current flows. Note that when X and Y are electrically connected, it includes the case where X and Y are directly connected.

[0565] As an example of the case where X and Y are functionally connected, a circuit (e.g., a logic circuit (an inverter, a NAND circuit, a NOR circuit, etc.), a signal conversion circuit (a DA conversion circuit, an AD conversion circuit, a gamma correction circuit, etc.), a potential level conversion circuit (a power source circuit (a boost circuit, a buck circuit, etc.), a level shifter circuit that changes the potential level of a signal, etc.) , a voltage source, a current source, a switching circuit, an amplification circuit (a circuit that can increase the signal amplitude or the amount of current, etc., an operational amplifier, a differential amplification circuit, a source follower circuit, a buffer circuit, etc.), a signal generation circuit, a memory circuit, a control circuit, etc.) can be connected between X and Y by one or more. ​​​That is, for example, even if another circuit is interposed between X and Y, if the signal output from X is transmitted to Y, X and Y shall be regarded as functionally connected. Note that when X and Y are functionally connected, it shall include the case where X and Y are directly connected and the case where X and Y are electrically connected.

[0566] Note that when it is explicitly stated that X and Y are electrically connected, the cases where X and Y are electrically connected (that is, when connected with another element or another circuit interposed between X and Y ), the cases where X and Y are functionally connected (that is, when functionally connected with another circuit interposed between X and Y ), and the cases where X and Y are directly connected (that is, when connected without another element or another circuit interposed between X and Y ) shall be disclosed in this specification and the like. That is, when it is explicitly stated that they are electrically connected, the same content as when it is only explicitly stated that they are connected shall be disclosed in this specification and the like. Note that for example, when the source (or the first terminal, etc.) of a transistor is electrically connected to X via (or without) Z1, and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y via (or without) Z

[0567] 2, or when the source (or the first terminal, etc.) of the transistor is directly connected to a part of Z1, another part of Z1 is directly connected to X, the drain (or the second terminal, etc.) of the transistor is directly connected to a part of Z2, and another part of Z2 is directly connected to Y, it can be expressed as follows. (or the first terminal, etc.) is directly connected to a part of Z1, another part of Z1 is directly connected to X, the drain (or the second terminal, etc.) of the transistor is directly connected to a part of Z2, and another part of Z2 is directly connected to Y, it can be expressed as follows. is directly connected to a part of Z2, and another part of Z2 is directly connected to Y, it can be expressed as follows. In this case, it can be expressed as follows. It can be expressed as follows.

[0568] For example, it can be expressed as "X, Y, the source (or the first terminal, etc.) of the transistor, and the drain (or the second terminal, etc.) of the transistor are electrically connected to each other, and are electrically connected in the order of X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, and Y." Or, it can be expressed as "The source (or the first terminal, etc.) of the transistor is electrically connected to X, the drain (or the second terminal, etc.) of the transistor is electrically connected to Y, and X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, and Y are electrically connected in this order." Or, it can be expressed as "X is electrically connected to Y via the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor, and X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, and Y are provided in this connection order." Using the same expression methods as these examples, by stipulating the connection order in the circuit configuration, the source (or the first terminal, etc.) of the transistor and the drain (or the second terminal, etc.) of the transistor can be distinguished, and the technical scope can be determined. Or, as another expression method, for example, "The source (or the first terminal, etc.) of the transistor is electrically connected to X via at least the first connection path, and the first connection path does not have a second connection path, and the second connection path is the path through the transistor between the source (or the first terminal, etc.) of the transistor and the drain (or the second terminal, etc.) of the transistor."

[0569] ​​​​​​is a path between) and the first connection path is a path via Z1, and the drain of the transistor (or the second terminal, etc.) is electrically connected to Y via at least a third connection path. The third connection path does not have the second connection path, and the third connection path is a path via Z2. It can be expressed as "". Or, "The source of the transistor (or the first terminal, etc.) is electrically connected to X via at least the first connection path via Z1. The first connection path does not have the second connection path. The second connection path has a connection path via a transistor, and the drain of the transistor (or the second terminal, etc.) is electrically connected to Y via at least a third connection path via Z2. The third connection path does not have the second connection path." It can be expressed as "". Or, "The source of the transistor (or the first terminal, etc.) is electrically connected to X via at least the first electrical path via Z1. The first electrical path does not have the second electrical path. The second electrical path is an electrical path from the source of the transistor (or the first terminal, etc.) to the drain of the transistor (or the second terminal, etc.). The drain of the transistor (or the second terminal, etc.) is electrically connected to Y via at least the third electrical path via Z2. The third electrical path does not have the fourth electrical path. The fourth electrical path is an electrical path from the drain of the transistor (or the second terminal, etc.) to the source of the transistor (or the first terminal, etc.)." By using an expression method similar to these examples to define the connection paths in the circuit configuration, the source of the transistor (or the first terminal is electrically connected to Y via at least a third connection path, and the third connection path does not have the second connection path, and the third connection path is a path via Z2. It can be expressed as "". Or, "The source of the transistor (or the first terminal, etc.) is electrically connected to X via at least the first connection path via Z1. The first connection path does not have the second connection path. The second connection path has a connection path via a transistor, and the drain of the transistor (or the second terminal, etc.) is electrically connected to Y via at least a third connection path via Z2. The third connection path does not have the second connection path." It can be expressed as "". Or, "The source of the transistor (or the first terminal, etc.) is electrically connected to X via at least the first electrical path via Z1. The first electrical path does not have the second electrical path. The second electrical path is an electrical path from the source of the transistor (or the first terminal, etc.) to the drain of the transistor (or the second terminal, etc.). The drain of the transistor (or the second terminal, etc.) is electrically connected to Y via at least the third electrical path via Z2. The third electrical path does not have the fourth electrical path. The fourth electrical path is an electrical path from the drain of the transistor (or the second terminal, etc.) to the source of the transistor (or the first terminal, etc.)." It can be expressed as "". By using an expression method similar to these examples to define the connection paths in the circuit configuration, the source of the transistor (or the first terminal etc.) and other components in the circuit can be clearly described. For example, in a circuit, the connection relationship between components can be accurately defined. This helps in understanding the electrical connections and signal flows in the circuit. It allows for clear communication and analysis of the circuit structure. In this way, the circuit design and troubleshooting can be more effectively carried out. The electrical paths between different parts of the transistor play an important role in determining the circuit performance. Using such expressions to define the connection paths can provide a clear basis for circuit design and optimization. etc.) and other components in the circuit can be clearly described. distinguish the source (or the first terminal, etc.) from the drain (or the second terminal, etc.) to determine the technical scope This can be achieved

[0570] Note that these expression methods are just examples and are not limited to these expression methods. Here, X , Y, Z1, and Z2 are assumed to be objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.)

[0571] Even if components that are independent on the circuit diagram are shown as being electrically connected, there may be a case where one component has the functions of multiple components . For example, when a part of the wiring also functions as an electrode, a single conductive film has the functions of both a wiring component and an electrode component . Therefore, the electrical connection in this specification includes such a case where a single conductive film has the functions of multiple components within its scope

Description of Reference Numerals

[0572] ANO conductive film CC color conversion layer C21 capacitor C22 capacitor GCLK signal G1 conductive film G2 conductive film MD transistor MD2 transistor M21 transistor N21 node N22 node PWC1 signal PWC2 signal S1g conductive film S2g conductive film SW21 switch SW22 switch SW23 switch VCOM2 conductive film FPC1 flexible printed circuit board 104 conductive film 106 insulating film 108 semiconductor film 108A region 108B region 108C region 112A conductive film 112B conductive film 200 information processing device 210 arithmetic unit 211 arithmetic section 212 memory section 213 artificial intelligence section 214 transmission path 215 input / output interface 220 input / output device 230 display section 231 region 233 timing controller 234 expansion circuit 235 image processing circuit 238 control section 240 input section 241 detection region 250 detection section 290 communication section 300 transistor 305 conductor 305a conductor 305b conductor 305c conductor 312 insulator 314 insulator 316 insulator 322 insulator 324 insulator 330 oxide 330a oxide 330b oxide 340 conductor 340a conductor 340b conductor 341 insulator 341a insulator 341b insulator 342 Conductor 342a Conductor 342b Conductor 343 Oxide 343a Oxide 343b Oxide 346 Conductor 346a Conductor 346b Conductor 350 Insulator 350a Insulator 350b Insulator 360 Conductor 360a Conductor 360b Conductor 371 Insulator 371a Insulator 371b Insulator 375 Insulator 380 Insulator 382 Insulator 383 Insulator 385 Insulator 501 Insulating film 501A Insulating film 501B Insulating film 501C Insulating film 501D Insulating film 504 Conductive film 505 Sealing material 506 Insulating film 507A Conductive film 507B Conductive film 508 Semiconductor film 508A Region 508B Region 508C Region 510 Substrate 512A Conductive film 512B Conductive film 516 Insulating film 518 Insulating film 519B Terminal 519ga Contact 519gb Contact 520 Functional layer 520B Functional layer 521 Insulating film 521B Insulating Film 521C Insulating Film 521D Insulating Film 524 Conductive Film 530G Pixel Circuit 550B Element 550G Element 551 Electrode 551G Electrode 552 Electrode 553 Layer 553EM Light Emitting Layer 553N Layer 553P Layer 591G Opening 700 Function Panel 700TP Function Panel 702B Pixel 702G Pixel 702R Pixel 703 Pixel 705 Sealing Material 770 Substrate 770P Functional Film 802 Detector 5200B Information Processing Device 5210 Arithmetic Unit 5220 Input / Output Device 5230 Display Unit 5240 Input Unit 5250 Detection Unit 5290 Communication Unit 5700 Electronic Device 5701 Display Panel 5702 Housing 5703 Optical Member 5704 Mounting Part 5706 Display Area 5707 Frame 5708 Nose Pad 5712 Reflector 5713 Reflective Surface 5715 Light 5716 Transmitted Light 5717 Battery 5718 Wireless Power Supply Module 5719 Touch Sensor Module 5720 Finger

Claims

1. A pixel having a first pixel, The first pixel comprises: A substrate; a color conversion layer above the substrate; a first element provided above the color conversion layer and having a function of emitting light; a first functional layer having a region located above the first element; the first element includes gallium nitride; the color conversion layer has a function of converting the color of light emitted by the first element into a different color, the first functional layer includes a first insulating film and a pixel circuit above the first insulating film; the first insulating film has a region sandwiched between the pixel circuit and the first element, the first insulating film comprises a first film having a region covering an upper surface and a side surface of the first element, a second film having a region in contact with the upper surface of the first film and including silicon oxide, and a third film having a region in contact with the upper surface of the second film and including silicon nitride; The pixel circuit a first conductive layer provided above the first insulating film and functioning as a first gate electrode of a first transistor; an oxide semiconductor layer provided above the first conductive layer and including a channel formation region of the first transistor; a second conductive layer provided above the oxide semiconductor layer and functioning as a second gate electrode of the first transistor; a second insulating film having a region located above the second conductive layer; a third conductive layer provided above the second insulating film and electrically connected to the oxide semiconductor layer and the first element; the third conductive layer is electrically connected to the first element through an opening provided in the second insulating film and an opening provided in the first insulating film; The second conductive layer is electrically connected to the first conductive layer.

2. A pixel having a first pixel, The first pixel comprises: A substrate; a color conversion layer above the substrate; a first element provided above the color conversion layer and having a function of emitting light; a first functional layer having a region located above the first element; the first element includes gallium nitride; the color conversion layer has a function of converting the color of light emitted by the first element into a different color, the first functional layer includes a first insulating film and a pixel circuit above the first insulating film; the first insulating film has a region sandwiched between the pixel circuit and the first element, the first insulating film comprises a first film having a region covering an upper surface and a side surface of the first element, a second film having a region in contact with the upper surface of the first film and including silicon oxide, and a third film having a region in contact with the upper surface of the second film and including silicon nitride; The pixel circuit a first conductive layer provided above the first insulating film and functioning as a first gate electrode of a first transistor; a first oxide semiconductor layer provided above the first conductive layer and including a channel formation region of the first transistor; a second conductive layer provided above the first oxide semiconductor layer and functioning as a second gate electrode of the first transistor; a third conductive layer provided above the first insulating film and functioning as a first gate electrode of a second transistor; a second oxide semiconductor layer provided above the third conductive layer and including a channel formation region of the second transistor; a fourth conductive layer provided above the second oxide semiconductor layer and functioning as a second gate electrode of the second transistor; a second insulating film having a region located above the second conductive layer and a region located above the fourth conductive layer; a fifth conductive layer provided above the second insulating film and electrically connected to the first oxide semiconductor layer and the first element; the fifth conductive layer is electrically connected to the first element through an opening provided in the second insulating film and an opening provided in the first insulating film; the second conductive layer is electrically connected to the first conductive layer; the fourth conductive layer is electrically connected to the third conductive layer; One of the source and the drain of the second transistor is electrically connected to the gate of the first transistor.

3. In claim 1 or 2, The functional panel, wherein the oxide semiconductor layer contains indium.

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