Photoelectric conversion device

Abstract

To provide a photoelectric conversion device in which the parasitic capacitance generated in a floating diffusion can be reduced further and the crosstalk can be suppressed.SOLUTION: A photoelectric conversion device includes a plurality of pixels each including a photoelectric conversion unit, a floating diffusion unit, an amplifier transistor including a gate, and a selection transistor, and includes a shield wire that is disposed so as to cover at least a part of the gate in a plan view, a first diffusion region, a second diffusion region, one or more first contacts, and one or more second contacts. The gate, the first diffusion region, and the second diffusion region are disposed adjacent to each other on a straight line in a first direction, and the total width of the one or more first contacts is more than the total width of the one or more second contacts in a second direction that is orthogonal to the first direction.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present invention relates to a photoelectric conversion device.

Background Art

[0002] In recent years, CMOS image sensors suitable for high-speed reading have been widely used in imaging devices such as digital still cameras and digital video cameras. For example, a CMOS image sensor that suppresses crosstalk has been proposed by arranging a shield wiring to which the output potential of an amplification transistor is supplied between a wiring connected to a floating diffusion and a transfer control line (Patent Document 1). In Patent Document 1, a shield wiring to which the output potential of an amplification transistor is supplied is arranged between a wiring connected to a floating diffusion and a transfer control line.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in Patent Document 1, depending on the layout, crosstalk suppression may be insufficient.

[0005] An object of the present invention is to further reduce the parasitic capacitance generated in the floating diffusion and suppress crosstalk.

Means for Solving the Problems

[0006] One aspect of the present invention is a photoelectric conversion device, each comprising a photoelectric conversion unit, a floating diffusion unit, an amplification transistor that amplifies a signal based on the floating diffusion unit and outputs it as a pixel signal and includes a gate, and a selection transistor that controls the output of the pixel signal amplified by the amplification transistor. The device includes a plurality of pixels, a shield wiring disposed so as to cover at least a part of the gate in plan view, a first diffusion region that is a source or a drain of the amplification transistor, a second diffusion region that is a source or a drain of the selection transistor, one or more first contacts connected to the first diffusion region, and one or more second contacts connected to the second diffusion region. The gate, the first diffusion region, and the second diffusion region are arranged adjacent to each other in a straight line in a first direction, and in a second direction orthogonal to the first direction, the sum of the widths of the one or more first contacts is greater than the sum of the widths of the one or more second contacts.

[0007] One aspect of the present invention is a photoelectric conversion device, each comprising a photoelectric conversion unit, a floating diffusion unit, an amplification transistor that amplifies a signal based on the floating diffusion unit and outputs it as a pixel signal and includes a gate, and a selection transistor that controls the output of the pixel signal amplified by the amplification transistor. The device includes a plurality of pixels and wiring containing copper as a main component, a first diffusion region that is a source or a drain of the amplification transistor, a second diffusion region that is a source or a drain of the selection transistor, one or more first contacts connected to the first diffusion region and the wiring, and one or more second contacts connected to the second diffusion region. The gate, the first diffusion region, and the second diffusion region are arranged adjacent to each other in a straight line in a first direction, and in a second direction orthogonal to the first direction, the sum of the widths of the one or more first contacts is greater than the sum of the widths of the one or more second contacts.

Advantages of the Invention

[0008] The parasitic capacitance generated in the floating diffusion can be further reduced, and crosstalk can be suppressed.

Brief Description of the Drawings

[0009]

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Modes for Carrying Out the Invention

[0010] Hereinafter, each embodiment will be described with reference to the drawings. The following embodiments are for embodying the technical idea of the present invention and do not limit the present invention. The sizes and positional relationships of the members shown in each drawing may be exaggerated for clarity of explanation. In the following description, the same components may be denoted by the same reference numerals and the description thereof may be omitted. In the following description, the same components may be denoted by the same reference numerals and the description thereof may be omitted. In this specification, for components having a similar configuration, " - " and "numbers" such as -1, -2, -3, etc. may be appended to the end of the reference numeral and the description thereof may be omitted.

[0011] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, terms indicating a specific direction or position (for example, "upper", "lower", "right", "left", and other terms including those terms) are used as necessary. The use of those terms is for facilitating the understanding of the embodiments with reference to the drawings, and the technical scope of the present invention is not limited by the meanings of those terms.

[0012] In this specification, the plane refers to a plane viewed from a direction perpendicular to the light incident surface of the semiconductor layer. The cross section refers to a plane in a direction perpendicular to the light incident surface of the semiconductor layer. When the light incident surface of the semiconductor layer is rough when viewed microscopically, the plane and the cross section are defined based on the light incident surface of the semiconductor layer when viewed macroscopically. Planar view refers to the case of viewing the aforementioned plane. For example, the planar view refers to the case of viewing from a direction orthogonal to the surface on which a plurality of pixels are arranged.

[0013] In each of the embodiments described below, as an example of a photoelectric conversion device, an imaging device will be mainly described. However, each embodiment is not limited to an imaging device and can also be applied to other examples of photoelectric conversion devices. For example, there are ranging devices (devices for distance measurement using focus detection or TOF (Time Of Flight)), photometry devices (devices for measuring the amount of incident light), and the like.

[0014] Note that the conductivity type of the transistor described in the embodiments below is an example and is not limited to only the conductivity type described in the embodiments. With respect to the conductivity type described in the embodiments, the conductivity type can be appropriately changed, and accordingly, the potentials of the gate, source, and drain of the transistor are appropriately changed.

[0015] For example, for a transistor that operates as a switch, the low level and high level of the potential supplied to the gate may be reversed with respect to the description in the embodiments as the conductivity type is changed. Also, the conductivity type of the semiconductor region described in the embodiments below is an example and is not limited to only the conductivity type described in the embodiments. With respect to the conductivity type described in the embodiments, the conductivity type can be appropriately changed, and accordingly, the potential of the semiconductor region is appropriately changed.

[0016] Also, in the following embodiments, the connection between the elements of the circuit may be described. In this case, even if another element is interposed between the elements of interest, unless otherwise specified, the elements of interest are treated as being connected. For example, assume that element A is connected to one node of a capacitive element C having a plurality of nodes, and element B is connected to the other node. Even in such a case, unless otherwise specified, elements A and B are treated as being connected.

[0017] (Embodiment 1) FIG. 1 is a schematic block diagram of a photoelectric conversion device according to the present embodiment. The photoelectric conversion device 101 includes a photoelectric conversion region 102 in which a plurality of pixels are arranged in a matrix, a vertical scanning circuit 103 for driving each part included in the pixels, a power supply unit 104, a horizontal scanning circuit 105 for reading out the electrical signals of the pixels, and an output unit 106 to which the electrical signals of the pixels are output. The plurality of pixels are arranged over a plurality of rows and a plurality of columns. With this photoelectric conversion device, the amount of light on the photoelectric conversion region can be output as a two-dimensional electrical signal.

[0018] In the photoelectric conversion device 101, the photoelectric conversion region 102 may be arranged in a first semiconductor layer, and the vertical scanning circuit 103, the power supply unit 104, the horizontal scanning circuit 105, and the output unit 106 may be arranged in a second semiconductor layer, and the second semiconductor layer and the first semiconductor layer may be stacked and configured.

[0019] FIG. 2 is an equivalent circuit diagram of the pixels included in the photoelectric conversion region 102. In FIG. 2, a configuration of three rows and two columns is shown for simplicity, but the number of pixels is not limited to this. Also, two signal lines 17-1 and 17-2 are arranged for one column, but the number of signal lines is not limited to this.

[0020] The pixel 201 includes a photoelectric conversion unit 1, a floating diffusion unit 2, and a transfer unit 11 provided between the photoelectric conversion unit 1 and the floating diffusion unit 2. Further, it includes a capacitance switching unit 12 for switching the capacitance of the floating diffusion unit 2 as necessary. It also includes a reset unit 13 for resetting the floating diffusion unit 2 and an amplification unit 14 for outputting the signal of the floating diffusion unit 2. Furthermore, it includes a selection unit 15 for controlling the output of the signal from the amplification unit 14 to the signal line 17. For each of the transfer unit 11, the capacitance switching unit 12, the reset unit 13, the amplification unit 14, and the selection unit 15, for example, a transistor is used. Typically, an MOS transistor is used, but it is not limited to this form. Also, in the examples described below, the transistor will be described as an N-type MOS transistor, but as described above, the conductivity type can be appropriately changed.

[0021] The photoelectric conversion unit 1 receives the light incident on the pixel 201 and generates charges according to the amount of received light. For example, a photodiode can be used as the photoelectric conversion unit 1. The floating diffusion unit 2 temporarily holds the charges transferred from the photoelectric conversion unit 1 and functions as a charge-voltage conversion unit that converts the held charges into a voltage signal.

[0022] The transfer unit 11 is driven by the transfer unit drive pulse pTX and transfers the charges generated in the photoelectric conversion unit 1 to the floating diffusion unit 2.

[0023] The capacitance switching unit 12 is driven by the capacitance switching pulse pSW of the floating diffusion and switches the capacitance of the floating diffusion unit 2. By turning on the capacitance switching unit 12, the gate capacitance of the capacitance switching unit 12 can be added to the floating diffusion unit 2.

[0024] The reset unit 13 is driven by the reset unit drive pulse pRES. At this time, by turning on the reset unit and the capacitance switching unit simultaneously, the floating diffusion unit 2 can be reset.

[0025] The amplification unit 14 amplifies the voltage signal converted by the floating diffusion unit 2 and outputs it as a pixel signal. The amplification unit 14 is composed of an amplification transistor and includes a gate, a drain, and a source.

[0026] The selection unit 15 is driven by the selection drive pulse pSEL and outputs the pixel signal amplified by the amplification unit 14 to either the signal lines 17-1 or 17-2. The selection unit 15 is composed of a selection transistor and includes a gate, a drain, and a source. In this embodiment, the signal lines are vertical signal lines extending in the vertical direction, and the selection unit 15 is driven by a row selection pulse. Note that the present invention also includes the case where the signal lines are horizontal signal lines extending in the horizontal direction.

[0027] FIG. 3 is a diagram showing the timing chart of each drive pulse in the photoelectric conversion device 101. FIG. 3 shows, as an example, the timing chart when outputting a pixel signal at low luminance. In FIG. 3, the horizontal axis represents time t, and the vertical axis represents voltage.

[0028] At time t1, the capacitance switching unit 12, the reset unit 13, and the selection unit 15 are turned on. Thereby, the pixel is selected and the floating diffusion unit 2 is reset.

[0029] Next, at time t2, while keeping the reset unit 13 and the selection unit 15 turned on, the capacitance switching unit 12 is turned off. Thereby, the capacitance of the floating diffusion unit 2 at the time of reading can be reduced, and noise can be reduced. Also, at this time, the signal output to the signal line 17 through the amplifier unit 14 is output to the output unit 106 as a reset level signal.

[0030] Next, at time t3, the transfer unit 11 is turned on, and the charge accumulated in the photoelectric conversion unit 1 is transferred to the floating diffusion unit 2.

[0031] Then, at time t4, the transfer unit 11 is turned off, and the signal output to the signal line 17 through the amplifier unit 14 is output to the output unit 106 as a pixel signal.

[0032] After that, the reset unit 13 and the selection unit 15 are turned off.

[0033] FIG. 4(a) is a plan view of the pixel 201 in Embodiment 1. FIG. 4(a) shows the layout of the diffusion region and the gate of the transistor in the semiconductor layer. In the present embodiment, the photoelectric conversion device is a back-illuminated type photoelectric conversion device in which light is irradiated from below the semiconductor layer, that is, from the side opposite to the side where the first wiring layer is disposed in the semiconductor layer. In FIGS. 4(a), 4(b), and 4(c), the same or corresponding elements as those shown in FIG. 2 are denoted by the same reference numerals. Further, in FIGS. 4(a), 4(b), and 4(c), each region is shown as a rectangle for simplification, but the shape of each part is not limited to this, and it shows that at least each part is disposed in this region.

[0034] The diffusion region 401 is the drain region of the amplification unit 14, and the diffusion region 402 (second diffusion region) is the source region of the selection unit 15. A contact 403 (first contact) is connected to the diffusion region 401. A contact 404 (second contact) is connected to the diffusion region 402. Further, a contact 406 is connected to the diffusion region 405. The gate of the amplification unit 14, the diffusion region 401, and the diffusion region 402 are arranged adjacent to each other in a straight line in the gate length direction (the vertical direction in the drawing) of the amplification unit 14. The gate length direction of the amplification unit 14 is also referred to as the first direction.

[0035] Let the dimension (width) in the direction parallel to the gate width direction of the amplification unit 14 of the contact 404 in the horizontal direction (the horizontal direction in the drawing) be W2. The direction orthogonal to the first direction is also referred to as the second direction. Also, let the dimension in the horizontal direction of the drawing of the contact 403 be W1. W1 and W2 are different, and the relationship is W1>W2. Thereby, the contact 403 can block the electrical coupling between the contact 404 and the gate of the amplification unit 14, and the parasitic capacitance generated between the floating diffusion unit 2 and the contact 404 can be reduced. As a result, in a photoelectric conversion device having a mode of simultaneously reading out the pixels 201-1 and 201-2, crosstalk from the output of the pixel 201-2 to the floating diffusion unit 2 can be suppressed, and the image quality can be improved.

[0036] Also, at the gate of the amplifying section 14, the width in the first direction is longer than the length in the second direction. Thus, when the width of the gate is large, the crosstalk suppression effect according to this embodiment becomes more prominent.

[0037] FIG. 4(b) is a plan view of the pixel 201 in Embodiment 1. FIG. 4(b) shows the layout of the first wiring layer provided on the upper layer of the semiconductor layer shown in FIG. 4(a).

[0038] The wiring 407 (first wiring) is connected to the floating diffusion section 2 and the gate of the amplifying section 14. The wiring 408 (second wiring) is connected to the diffusion region 405 via the contact 406. Also, a via 419 is connected to the wiring 408. The wiring 417 is connected to the drain region of the selection section 15.

[0039] FIG. 4(c) is a plan view of the pixel 201 in Embodiment 1. FIG. 4(c) shows the layout of the second wiring layer provided on the upper layer of the first wiring layer shown in FIG. 4(b) and the third wiring layer provided on the upper layer of the second wiring layer. For the wirings included in the first wiring layer, the second wiring layer, and the third wiring layer, for example, wirings containing copper as a main component are used. This wiring may further include a barrier metal layer, and titanium, nickel, etc. are used as the barrier metal.

[0040] The shield wiring 418 is provided in the second wiring layer and is connected to the wiring 408 via the via 419. The signal lines 17-1 and 17-2 are provided in the third wiring layer. The shield wiring 418 is arranged at a position where, in plan view, the signal lines 17-1 and 17-2 and the gate of the amplifying section 14 overlap. Also, the shield wiring 418 is preferably arranged so as to cover the gate of the amplifying section 14 and the wiring 407. Thereby, the parasitic capacitance can be reduced. The shield wiring 418 only needs to cover at least a part of at least the gate of the amplifying section 14.

[0041] FIG. 5 shows a cross-sectional view taken along line A-A′ of FIG. 4(c). In the semiconductor layer 501, a diffusion region 401, a diffusion region 402, and a diffusion region 405 are provided. Also, an element isolation region 416 is formed between the diffusion region 401 and the diffusion region 402. In FIG. 5, an example is shown in which the element isolation region 416 is formed of an element isolation oxide film such as STI (Shallow Trench Isolation). However, the element isolation region 416 may be formed of a diffusion region having a conductivity type different from that of the diffusion region 401 and the diffusion region 402.

[0042] According to the present embodiment, the gate of the amplification unit 14, the diffusion region 401, and the diffusion region 402 are arranged adjacent to each other in a straight line in the gate length direction of the amplification unit 14, and by setting the width of each contact as W1>W2, the image quality can be improved.

[0043] (Embodiment 2) FIG. 6 is a plan view of a pixel in Embodiment 2. This embodiment is different from Embodiment 1 in that a plurality of contacts 403-1 and 403-2 are connected to the diffusion region 401, and has substantially the same structure as Embodiment 1 in other respects. Hereinafter, the differences from Embodiment 1 will be described, and the description of the same structure as Embodiment 1 will be omitted as appropriate.

[0044] FIG. 6(a) is a plan view of the pixel 201 in Embodiment 2. FIG. 6(a) shows the layout of the diffusion region and the gate of the transistor in the semiconductor layer. The diffusion region 401 is the drain region of the amplification unit 14, and the diffusion region 402 is the source region of the selection unit 15. The gate of the amplification unit 14, the diffusion region 401, and the diffusion region 402 are arranged adjacent to each other in a straight line in the gate length direction (the vertical direction of the drawing) of the amplification unit 14.

[0045] In the diffusion region 401, two contacts 403-1 and 403-2 are connected side by side in the horizontal direction of the drawing, and one contact 404 is connected to the diffusion region 402. Thus, in this embodiment, the number of contacts 403 is made larger than the number of contacts 404, and the total width of the contacts 403 is made larger than the width of the contact 404. The number of contacts 403 only needs to be larger than the number of contacts 404, and the number of contacts is not limited to this. The diffusion region 405 is the source region of the amplification unit 14, and the contact 406 is connected thereto.

[0046] Figure 6(b) is a plan view of the pixel 201 in Embodiment 2. Figure 6(b) shows the layout of the first wiring layer provided on the upper layer of the semiconductor layer shown in Figure 6(a). The wiring 407 is connected to the floating diffusion portion 2 and the gate of the amplification unit 14. The wiring 408 is connected to the diffusion region 405 via the contact 406. Also, a via 419 is connected to the wiring 408. The wiring 417 is connected to the drain region of the selection unit 15.

[0047] Figure 6(c) is a plan view of the pixel 201 in Embodiment 2. Figure 6(c) shows the layout of the second wiring layer provided on the upper layer of the first wiring layer shown in Figure 6(b) and the third wiring layer provided on the upper layer of the second wiring layer.

[0048] The shield wiring 418 is provided in the second wiring layer and is connected to the wiring 408 via the via 419. The signal lines 17-1 and 17-2 are provided in the third wiring layer. The shield wiring 418 is arranged at a position where the signal lines 17-1 and 17-2 and the gate of the amplification unit 14 overlap in a plan view. Also, the shield wiring 418 is preferably arranged so as to cover the gate of the amplification unit 14 and the wiring 407. Thereby, the parasitic capacitance can be reduced. The shield wiring 418 only needs to cover at least a part of at least the gate of the amplification unit 14.

[0049] In this embodiment, while the total horizontal dimension of the drawing of contact 404 is W, the total horizontal dimension of the drawing of contact 403 is as large as 2×W. As a result, contacts 403-1 and 403-2 block the electrical coupling between contact 404 and the gate of amplifier 14, and the parasitic capacitance generated between floating diffusion section 2 and contact 504 can be reduced. As a result, in a photoelectric conversion device having a mode of simultaneously reading out pixels 201-1 and 201-2, crosstalk from the output of pixel 201-2 to floating diffusion section 2 of pixel 201-1 can be suppressed, and image quality can be improved.

[0050] (Embodiment 3) FIG. 7 is a plan view of a pixel in Embodiment 3. This embodiment is different from Embodiment 2 in that three contacts 403-1, 403-2, and 403-3 are connected to diffusion region 401, and has substantially the same structure as Embodiment 2 in other respects. Below, differences from Embodiment 2 will be described, and descriptions of the same structures as in Embodiment 2 will be omitted as appropriate.

[0051] As shown in FIG. 7(a), in this embodiment, three contacts 403 are connected to diffusion region 401, and two of them are arranged in a straight line in the horizontal direction of the drawing. One contact 404 is connected to diffusion region 402. At least two of contacts 403 may be arranged in a straight line in the horizontal direction of the drawing, and the number of contacts is not limited to this. As viewed from contact 404, contact 403-3 is arranged between contacts 403-1 and 403-2. Thereby, compared with Embodiment 2, it becomes easier to block the electrical coupling between the gate of amplifier 14 and contact 404.

[0052] FIG. 7(b) shows the layout of the first wiring layer provided on the upper layer of the semiconductor layer shown in FIG. 7(a), and FIG. 7(c) shows the layout of the second wiring layer provided on the upper layer of the first wiring layer shown in FIG. 7(b) and the third wiring layer provided on the upper layer of the second wiring layer.

[0053] In this embodiment, the sum of the lateral dimensions of the drawing of contact 404 is W, while the sum of the lateral dimensions of the drawing of contact 403 is as large as 3×W. As a result, contacts 403-1, 403-2, and 403-3 block the electrical coupling between contact 404 and the gate of amplifier section 14, and the parasitic capacitance generated between floating diffusion section 2 and contact 504 can be reduced. As a result, in a photoelectric conversion device having a mode of simultaneously reading out pixels 201-1 and 201-2, crosstalk from the output of pixel 201-2 to floating diffusion section 2 of pixel 201-1 can be suppressed. Thereby, it becomes possible to improve the image quality.

[0054] (Embodiment 4) FIG. 8 is an equivalent circuit diagram of a pixel included in the photoelectric conversion region 102 in Embodiment 4. This embodiment is different from Embodiment 2 in that two photoelectric conversion sections 1-1 and 1-2 are shared by one floating diffusion section 2, and two selection sections 15-1 and 15-2 are connected to the output of one amplifier section 14. Otherwise, it has substantially the same structure as Embodiment 2. Hereinafter, the differences from Embodiment 2 will be described, and the description of the same structure as Embodiment 2 will be omitted as appropriate.

[0055] Pixel 201 of this embodiment shares two photoelectric conversion sections 1-1 and 1-2 by one floating diffusion section 2. Further, two selection sections 15-1 and 15-2 are connected to the output of one amplifier section 14. The number of photoelectric conversion sections shared by one floating diffusion is not limited to this. Also, the number of selection sections connected to one amplifier section is not limited to this.

[0056] FIG. 9(a) is a plan view of the pixel 201 in Embodiment 4. FIG. 9(a) shows the layout of the diffusion regions and the gates of the transistors in the semiconductor layer. The diffusion region 401 is the source region of the amplification unit 14, and the diffusion region 402 is the source region of the selection unit 15. The diffusion region 402, the diffusion region 401, and the gate of the amplification unit 14 are arranged adjacent to each other in a straight line in the gate length direction (the vertical direction of the drawing) of the amplification unit 14.

[0057] Two contacts 403-1 and 403-2 are connected side by side in the horizontal direction of the drawing to the diffusion region 401, and one contact 404 is connected to the diffusion region 402. Thus, in this embodiment, the number of contacts 403 is made larger than the number of contacts 404, and the total width of the contacts 403 is made larger than the width of the contact 404. The number of contacts 403 only needs to be larger than the number of contacts 404, and the number of contacts is not limited to this. The diffusion region 405 is the drain region of the selection unit 15, and the contact 406 is connected thereto.

[0058] FIG. 9(b) is a plan view of the pixel 201 in Embodiment 4. FIG. 9(b) shows the layout of the first wiring layer provided on the upper layer of the semiconductor layer shown in FIG. 9(a). The wiring 407 is connected to the floating diffusion unit 2 and the gate of the amplification unit 14. The wiring 414 is connected to the diffusion region 401 via the contacts 403-1 and 403-2. The wiring 414 is connected to the drain region of the selection unit 15. A via 415 is connected to the wiring 414.

[0059] FIG. 9(c) is a plan view of pixel 201 in Embodiment 4. FIG. 9(c) shows the layout of the second wiring layer provided on the upper layer of the first wiring layer shown in FIG. 9(b) and the third wiring layer provided on the upper layer of the second wiring layer. Shield wiring 418 is connected to wiring 414 via via 415. Signal lines 17-1 and 17-2 are provided in the third wiring layer. Shield wiring 418 is arranged at a position where it overlaps signal lines 17-1 and 17-2 and the gate of amplifier section 14 in plan view. Also, shield wiring 418 is preferably arranged so as to cover the gate of amplifier section 14 and wiring 407. However, it is sufficient that shield wiring 418 covers at least a part of the gate of amplifier section 14.

[0060] In this embodiment, while the total lateral length dimension of contacts 404 in the drawing is W, the total lateral length dimension of contacts 403-1 and 403-2 in the drawing is as large as 2×W. Thereby, contact 403 blocks the electrical coupling between contact 404 and the gate of amplifier section 14, and the parasitic capacitance generated in floating diffusion section 2 can be reduced between floating diffusion section 2 and contact 404. As a result, in a photoelectric conversion device having a mode of simultaneously reading using signal lines 17-1 and 17-2, crosstalk from the output of signal line 17-1 to floating diffusion section 2 can be suppressed. Thereby, it becomes possible to improve the image quality.

[0061] In this embodiment, as shown in FIG. 4, as contact 403, one long contact 403 in the lateral direction may be used, or as shown in FIG. 7, three or more contacts 403 may be used.

[0062] (Embodiment 5) The photoelectric conversion system according to this embodiment will be described with reference to FIG. 10. FIG. 10 is a block diagram showing the schematic configuration of the photoelectric conversion system according to this embodiment.

[0063] The photoelectric conversion devices (imaging devices) described in Embodiments 1 to 4 are applicable to various photoelectric conversion systems. Examples of applicable photoelectric conversion systems include digital still cameras, digital camcorders, surveillance cameras, copiers, fax machines, mobile phones, in-vehicle cameras, observation satellites, and the like. Further, a camera module including an optical system such as a lens and an imaging device is also included in the photoelectric conversion system. FIG. 10 illustrates a block diagram of a digital still camera as an example of these.

[0064] The photoelectric conversion system illustrated in FIG. 10 includes an imaging device 1004, which is an example of a photoelectric conversion device, and a lens 1002 that forms an optical image of a subject on the imaging device 1004. Further, the imaging device 1004 has a diaphragm 1003 for variably controlling the amount of light passing through the lens 1002 and a barrier 1001 for protecting the lens 1002. The lens 1002 and the diaphragm 1003 are an optical system that condenses light on the imaging device 1004. The imaging device 1004 is the photoelectric conversion device (imaging device) described in Embodiments 1 to 4, and converts the optical image formed by the lens 1002 into an electrical signal.

[0065] The photoelectric conversion system also has a signal processing unit 1007, which is an image generation unit that generates an image by processing an output signal output from the imaging device 1004. The signal processing unit 1007 performs operations of outputting image data by performing various corrections and compressions as necessary. The signal processing unit 1007 may be formed on the semiconductor substrate on which the imaging device 1004 is provided, or may be formed on a semiconductor substrate different from the imaging device 1004. Further, the imaging device 1004 and the signal processing unit 1007 may be formed on the same semiconductor substrate.

[0066] The photoelectric conversion system further includes a memory unit 1010 for temporarily storing image data, and an external interface unit (external I / F unit) 1013 for communicating with an external computer or the like. The photoelectric conversion system further includes a recording medium 1012 such as a semiconductor memory for recording or reading imaging data, and a recording medium control interface unit (recording medium control I / F unit) 1011 for recording or reading from the recording medium 1012. Note that the recording medium 1012 may be built into the photoelectric conversion system or may be detachable.

[0067] Furthermore, the photoelectric conversion system includes an overall control and arithmetic unit 1009 for performing various operations and controlling the entire digital still camera, and a timing generation unit 1008 for outputting various timing signals to the imaging device 1004 and the signal processing unit 1007. Here, the timing signals and the like may be input from the outside, and the photoelectric conversion system may have at least the imaging device 1004 and the signal processing unit 1007 that processes the output signal output from the imaging device 1004.

[0068] The imaging device 1004 outputs an imaging signal to the signal processing unit 1007. The signal processing unit 1007 performs predetermined signal processing on the imaging signal output from the imaging device 1004 and outputs image data. The signal processing unit 1007 generates an image using the imaging signal.

[0069] Thus, according to this embodiment, a photoelectric conversion system to which the photoelectric conversion device (imaging device) of any of the above embodiments is applied can be realized.

[0070] (Embodiment 6) The photoelectric conversion system and the mobile body of this embodiment will be described with reference to FIG. 11. FIG. 11 is a diagram showing the configuration of the photoelectric conversion system and the mobile body of this embodiment.

[0071] FIG. 11(a) shows an example of a photoelectric conversion system related to an in-vehicle camera. The photoelectric conversion system 300 includes an imaging device 370. The imaging device 370 is the photoelectric conversion device (imaging device) described in Embodiments 1 to 4. The photoelectric conversion system 300 includes an image processing unit 313 that performs image processing on a plurality of image data acquired by the imaging device 370, and a parallax acquisition unit 314 that calculates a parallax (phase difference of a parallax image) from the plurality of image data acquired by the photoelectric conversion system 300. Further, the photoelectric conversion system 300 includes a distance acquisition unit 316 that calculates a distance to an object based on the calculated parallax, and a collision determination unit 318 that determines whether there is a possibility of collision based on the calculated distance. Here, the parallax acquisition unit 314 and the distance acquisition unit 316 are examples of distance information acquisition means for acquiring distance information to an object. That is, the distance information is information related to parallax, defocus amount, distance to an object, and the like. The collision determination unit 318 may determine the possibility of collision using any of these distance information. The distance information acquisition means may be realized by dedicatedly designed hardware, or may be realized by a software module. Further, it may be realized by an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), or the like, or may be realized by a combination of these.

[0072] The photoelectric conversion system 300 is connected to a vehicle information acquisition device 325 and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. Further, the photoelectric conversion system 300 is connected to a control ECU 330, which is a control device that outputs a control signal for generating a braking force for the vehicle based on the determination result of the collision determination unit 318. Further, the photoelectric conversion system 300 is also connected to an alarm device 380 that issues an alarm to the driver based on the determination result of the collision determination unit 318. For example, when the determination result of the collision determination unit 318 indicates a high possibility of collision, the control ECU 330 performs vehicle control to avoid collision and reduce damage, such as applying brakes, returning the accelerator, and suppressing engine output. The alarm device 380 warns the user by sounding an alarm such as a sound, displaying alarm information on the screen of a car navigation system, or applying vibration to the seat belt or steering wheel.

[0073] In this embodiment, the photoelectric conversion system 300 images the surroundings of the vehicle, for example, the front or the rear. FIG. 11(b) shows the photoelectric conversion system when imaging the front of the vehicle (imaging range 350). The vehicle information acquisition device 325 sends an instruction to the photoelectric conversion system 300 or the imaging device 370. With such a configuration, the ranging accuracy can be further improved.

[0074] In the above, an example of controlling to avoid collision with other vehicles has been described, but it is also applicable to control for automatically driving following another vehicle and control for automatically driving without deviating from the lane. Further, the photoelectric conversion system is not limited to vehicles such as the host vehicle, and can be applied to moving bodies (mobile devices) such as ships, aircraft, or industrial robots, for example. This moving body mainly includes a driving force generation unit that generates a driving force used for the movement of the moving body, and one or both of rotating bodies mainly used for the movement of the moving body. The driving force generation unit can be an engine, a motor, or the like. The rotating body can be a tire, a wheel, a screw of a ship, a propeller of an aircraft, or the like. In addition, it can be applied not only to moving bodies but also to devices that widely use object recognition, such as an advanced road traffic system (ITS).

[0075] (Embodiment 7) The photoelectric conversion system of this embodiment will be described with reference to FIG. 12. FIG. 12 is a block diagram showing a configuration example of a distance image sensor which is the photoelectric conversion system of this embodiment.

[0076] As shown in FIG. 12, the distance image sensor 1401 includes an optical system 1402, a photoelectric conversion device 1403, an image processing circuit 1404, a monitor 1405, and a memory 1406. Then, the distance image sensor 1401 can obtain a distance image corresponding to the distance to the subject by receiving the light (modulated light or pulsed light) that is projected from the light source device 1411 toward the subject and reflected by the surface of the subject.

[0077] The optical system 1402 is configured to have one or a plurality of lenses, guide the image light (incident light) from the subject to the photoelectric conversion device 1403, and form an image on the light receiving surface (sensor unit) of the photoelectric conversion device 1403.

[0078] As the photoelectric conversion device 1403, the photoelectric conversion devices described in Embodiments 1 to 4 are applicable, and a distance signal indicating the distance obtained from the light receiving signal output from the photoelectric conversion device 1403 is supplied to the image processing circuit 1404.

[0079] The image processing circuit 1404 performs image processing for constructing a distance image based on the distance signal supplied from the photoelectric conversion device 1403. Then, the distance image (image data) obtained by the image processing is supplied to the monitor 1405 for display or supplied to the memory 1406 for storage (recording).

[0080] In the distance image sensor 1401 configured as described above, by applying the above-described photoelectric conversion device, for example, a more accurate distance image can be obtained as the characteristics of the pixels are improved.

[0081] (Embodiment 8) Figure 13 is a block diagram of the X-ray CT apparatus according to the present embodiment. The photoelectric conversion devices described in Embodiments 1 to 4 can be applied to the detector of the X-ray CT apparatus. The X-ray CT apparatus 30 in the present embodiment includes an X-ray generation unit 310, a wedge 311, a collimator 312, an X-ray detection unit 320, a top plate 330, a rotating frame 340, and a high voltage generator 360. Further, the X-ray CT apparatus 30 includes a data acquisition device (DAS: Data Acquisition System) 351, a signal processing unit 352, a display unit 353, and a control unit 354.

[0082] The X-ray generation unit 310 is composed of, for example, a vacuum tube that generates X-rays. A high voltage and a filament current from the high voltage generator 360 are supplied to the vacuum tube of the X-ray generation unit 310. X-rays are generated by irradiating thermoelectrons from the cathode (filament) toward the anode (target).

[0083] The wedge 311 is a filter that adjusts the amount of X-rays irradiated from the X-ray generation unit 310. The wedge 311 attenuates the amount of X-rays so that the X-rays irradiated from the X-ray generation unit 310 to the subject have a predetermined distribution. The collimator 312 is composed of a lead plate or the like that narrows down the irradiation range of the X-rays that have passed through the wedge 311. The X-rays generated by the X-ray generation unit 310 are shaped into a cone beam shape through the collimator 312 and irradiated onto the subject on the top plate 330.

[0084] The X-ray detection unit 320 is configured using the photoelectric conversion devices described in Embodiments 1 to 4 above. The X-ray detection unit 320 detects the X-rays that have passed through the subject from the X-ray generation unit 310 and outputs a signal corresponding to the amount of X-rays to the DAS 351.

[0085] The rotating frame 340 has an annular shape and is configured to be rotatable. Inside the rotating frame 340, the X-ray generation unit 310 (wedge 311, collimator 312) and the X-ray detection unit 320 are arranged to face each other. The X-ray generation unit 310 and the X-ray detection unit 320 can rotate together with the rotating frame 340.

[0086] The high-voltage generator 360 includes a boost circuit and outputs high voltage to the X-ray generation unit 310. The DAS 351 includes an amplifier circuit and an A / D conversion circuit, and outputs the signal from the X-ray detection unit 320 to the signal processing unit 352 as digital data.

[0087] The signal processing unit 352 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory), and is capable of executing image processing and the like on the digital data. The display unit 353 includes a flat panel display device and the like, and is capable of displaying X-ray images. The control unit 354 includes a CPU, a ROM, a RAM, and the like, and controls the operation of the entire X-ray CT apparatus 30.

[0088] (Embodiment 9) The photoelectric conversion system of the present embodiment will be described with reference to FIG. 14. FIG. 14 is a diagram showing an example of a schematic configuration of an endoscopic surgery system which is the photoelectric conversion system of the present embodiment.

[0089] In FIG. 14, a state where a surgeon (doctor) 1131 is performing surgery on a patient 1132 on a patient bed 1133 using an endoscopic surgery system 1150 is illustrated. As shown in the figure, the endoscopic surgery system 1150 is composed of an endoscope 1100, a surgical instrument 1110, and a cart 1134 on which various devices for endoscopic surgery are mounted.

[0090] The endoscope 1100 is composed of a lens barrel 1101 whose region of a predetermined length from the tip is inserted into the body cavity of the patient 1132, and a camera head 1102 connected to the proximal end of the lens barrel 1101. In the illustrated example, an endoscope 1100 configured as a so-called rigid endoscope having a rigid lens barrel 1101 is illustrated, but the endoscope 1100 may be configured as a so-called flexible endoscope having a flexible lens barrel.

[0091] At the tip of the lens barrel 1101, an opening into which the objective lens is fitted is provided. A light source device 1203 is connected to the endoscope 1100, and the light generated by the light source device 1203 is guided by a light guide extending inside the lens barrel 1101 to the tip of the lens barrel, and is irradiated through the objective lens toward the observation target in the body cavity of the patient 1132. Note that the endoscope 1100 may be a forward-viewing endoscope, or may be an oblique-viewing endoscope or a side-viewing endoscope.

[0092] An optical system and a photoelectric conversion device are provided inside the camera head 1102, and the reflected light (observation light) from the observation target is condensed by the optical system onto the photoelectric conversion device. The observation light is photoelectrically converted by the photoelectric conversion device, and an electrical signal corresponding to the observation light, that is, an image signal corresponding to the observation image, is generated. As the photoelectric conversion device, the photoelectric conversion device (imaging device) described in each of the above embodiments can be used. The image signal is transmitted as RAW data to a camera control unit (CCU) 1135.

[0093] The CCU 1135 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 1100 and the display device 1136. Further, the CCU 1135 receives an image signal from the camera head 1102, and performs various image processes for displaying an image based on the image signal, such as development processing (demosaicing processing), on the image signal.

[0094] The display device 1136 displays an image based on the image signal that has been subjected to image processing by the CCU 1135 under the control of the CCU 1135.

[0095] The light source device 1203 is composed of a light source such as an LED (Light Emitting Diode), and supplies irradiation light for photographing the surgical site or the like to the endoscope 1100.

[0096] The input device 1137 is an input interface for the endoscopic surgery system 1150. The user can input various information and give instructions to the endoscopic surgery system 1150 via the input device 1137.

[0097] The treatment instrument control device 1138 controls the driving of the energy treatment instrument 1112 for tissue cauterization, incision, or blood vessel sealing.

[0098] The light source device 1203 that supplies irradiation light when photographing the surgical site with the endoscope 1100 can be composed of, for example, an LED, a laser light source, or a white light source composed of a combination thereof. When a white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision. Therefore, the white balance of the captured image can be adjusted in the light source device 1203. Further, in this case, the laser light from each of the RGB laser light sources is irradiated to the observation target in a time-division manner, and the driving of the imaging element of the camera head 1102 is controlled in synchronization with the irradiation timing, so that images corresponding to each of RGB can be captured in a time-division manner. According to this method, a color image can be obtained without providing a color filter on the imaging element.

[0099] Further, the driving of the light source device 1203 may be controlled so as to change the intensity of the output light at predetermined time intervals. By controlling the driving of the imaging element of the camera head 1102 in synchronization with the timing of the change in the intensity of the light and acquiring images in a time-division manner and synthesizing the images, a so-called high-dynamic range image without blackout and whiteout can be generated.

[0100] Further, the light source device 1203 may be configured to supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, the wavelength dependence of light absorption in body tissue is utilized. Specifically, by irradiating light with a narrower band than the irradiation light (i.e., white light) during normal observation, a predetermined tissue such as blood vessels in the mucosal surface layer is photographed with high contrast. Alternatively, in special light observation, fluorescence observation may be performed to obtain an image by fluorescence generated by irradiating excitation light. In fluorescence observation, excitation light is irradiated on body tissue to observe the fluorescence from the body tissue, or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and excitation light corresponding to the fluorescence wavelength of the reagent is irradiated on the body tissue to obtain a fluorescence image. The light source device 1203 can be configured to supply such narrow-band light and / or excitation light corresponding to special light observation.

[0101] (Embodiment 10) The photoelectric conversion system of this embodiment will be described with reference to FIGS. 15(a) and 15(b). FIG. 15(a) illustrates glasses 1600 (smart glasses) which are the photoelectric conversion system of this embodiment. The glasses 1600 have a photoelectric conversion device 1602. The photoelectric conversion device 1602 is the photoelectric conversion device (imaging device) described in each of the above embodiments. Also, a display device including a light-emitting device such as an OLED or an LED may be provided on the back side of the lens 1601. The number of photoelectric conversion devices 1602 may be one or more. Also, a combination of multiple types of photoelectric conversion devices may be used. The arrangement position of the photoelectric conversion device 1602 is not limited to that shown in FIG. 15(a).

[0102] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power supply that supplies power to the photoelectric conversion device 1602 and the above display device. Also, the control device 1603 controls the operations of the photoelectric conversion device 1602 and the display device. An optical system for condensing light onto the photoelectric conversion device 1602 is formed in the lens 1601.

[0103] FIG. 15(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612, and a photoelectric conversion device corresponding to the photoelectric conversion device 1602 and a display device are mounted on the control device 1612. An optical system for projecting light emission from the photoelectric conversion device and the display device is formed in the lens 1611, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the photoelectric conversion device and the display device, and controls the operations of the photoelectric conversion device and the display device. The control device may have a line-of-sight detection unit that detects the wearer's line of sight. Infrared rays may be used for line-of-sight detection. The infrared light emitting unit emits infrared light to the eyeball of the user who is gazing at the display image. An imaging unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball, and thus an imaging image of the eyeball is obtained. By having a reducing means for reducing the light from the infrared light emitting unit to the display unit in a plan view, a decrease in image quality is reduced.

[0104] The user's line of sight with respect to the display image is detected from the imaging image of the eyeball obtained by imaging infrared light. Any known method can be applied to the line-of-sight detection using the imaging image of the eyeball. As an example, a line-of-sight detection method based on the Purkinje image by reflection of the irradiation light on the cornea can be used.

[0105] More specifically, a line-of-sight detection process based on the pupillary corneal reflex method is performed. Using the pupillary corneal reflex method, a line-of-sight vector representing the orientation (rotation angle) of the eyeball is calculated based on the image of the pupil and the Purkinje image included in the imaging image of the eyeball, whereby the user's line of sight is detected.

[0106] The display device of the present embodiment has a photoelectric conversion device having a light receiving element, and may control the display image of the display device based on the user's line-of-sight information from the photoelectric conversion device.

[0107] Specifically, the display device determines, based on the line-of-sight information, a first visual field area that the user gazes at and a second visual field area outside the first visual field area. The first visual field area and the second visual field area may be determined by the control device of the display device, or the display device may receive those determined by an external control device. In the display area of the display device, the display resolution of the first visual field area may be controlled to be higher than that of the second visual field area. That is, the resolution of the second visual field area may be made lower than that of the first visual field area.

[0108] Further, the display area has a first display area and a second display area different from the first display area, and based on the line-of-sight information, an area with a higher priority may be determined from the first display area and the second display area. The first visual field area and the second visual field area may be determined by the control device of the display device, or the display device may receive those determined by an external control device. The resolution of the area with a higher priority may be controlled to be higher than that of the area other than the area with a higher priority. That is, the resolution of the area with a relatively lower priority may be made lower.

[0109] Note that AI may be used to determine the first visual field area or the area with a higher priority. AI may be a model configured to estimate the angle of the line of sight and the distance to the target at the tip of the line of sight from the eye image, using the eye image and the direction in which the eye in the image is actually looking as teacher data. The AI program may be possessed by the display device, the photoelectric conversion device, or an external device. When it is possessed by an external device, it is transmitted to the display device via communication.

[0110] When performing display control based on visual recognition detection, it is preferably applicable to smart glasses further having a photoelectric conversion device for imaging the outside. The smart glasses can display the captured external information in real time.

[0111] (Embodiment 11) FIG. 16 is a cross-sectional view showing the internal configuration of a document reading apparatus which is an image reading apparatus. Below the document reading apparatus 100, a known image forming unit 110 is provided, and the document reading apparatus 100 and the image forming unit 110 constitute an image forming apparatus. As an example of a known image forming unit, there is an electrophotographic image forming unit. The electrophotographic image forming unit forms an image by developing an electrostatic latent image formed on a photosensitive drum into a toner image and transferring the toner image onto a recording medium such as paper. The image forming apparatus in the present embodiment can form an image read by the document reading apparatus 100 on a recording medium by the image forming unit 110.

[0112] On the document table glass 140, a sheet (hereinafter referred to as a document) 120 on which an image is formed as an object to be read is placed. When a user presses a read start button (not shown), the reading unit 130 moves in the direction of the arrow in the figure and reads the document 120.

[0113] When the reading unit 130 moves in the direction of the arrow, white LEDs 109a and 109b as light emitting units arranged above the reading unit 130 emit light to irradiate the document 120 with light.

[0114] The reading unit 130 is a reduction optical system reading unit including LEDs 109a and 109b, a plurality of folding mirrors 105a, 105b, 105c, 105d, 105e, a condenser lens 108, and a photoelectric conversion device 107. The light irradiated on the document 120 by the LEDs 109a and 109b is reflected by the document 120. The light reflected from the document 120 is reflected by the folding mirrors 105a, 105b, 105c, 105d, 105e and then condensed by the condenser lens 108 onto the photoelectric conversion device 107 which is a line sensor. The photoelectric conversion device 107 includes a light receiving element, and the light receiving element photoelectrically converts the incident light and outputs an electrical signal corresponding to the amount of the incident light.

[0115] FIG. 17 is a block diagram of the document reading apparatus 100 in the present embodiment.

[0116] The CPU 1407 reads the control program stored in the non-volatile memory 1408 and controls the entire document reading apparatus 100. The operation unit 903 is a user interface through which a user inputs settings for copy modes such as color copying, monochrome copying, double-sided copying, and an instruction to start copying. The motor 904 moves the reading unit 130 in the sub-scanning direction. The motor driver 905 receives a timing signal from the CPU 1407 and supplies an exciting current for rotationally controlling the motor 904.

[0117] The LED driver 906 receives a timing signal from the CPU 1407 and supplies a current for causing the white LEDs 109a and 109b to emit light.

[0118] The IC 407 performs analog processing such as sample-and-hold processing, offset processing, and gain processing on the analog voltage signal output from the photoelectric conversion device 107, and converts the analog-processed voltage signal into digital data (hereinafter, luminance data). The IC 407 is generally called an AFE (Analog Front End). In this embodiment, this digital data is 8-bit (0 to 255) data.

[0119] The operation of the image processing unit 1410 will be described. The read data output from the AFE 407 is stored in the line memory 409. The line memory 409 holds the read data read by each line of the light receiving element row lines 1, 2, and 3 in the photoelectric conversion device 107.

[0120] Therefore, the data sorting unit 410 rearranges the read data obtained from Line 1, Line 2, and Line 3 to generate image data for each color of RGB. For example, the processing of R will be described. The data sorting unit 410 picks up the R data portion from the image data of each of Line 1, Line 2, and Line 3 stored in the line memory 409. Since the read data of Line 1, Line 2, and Line 3 obtained at a certain timing are shifted in the sub-scanning direction, a process is performed to eliminate this shift. That is, for the data obtained at a certain timing, the read data of Line 2 is shifted by 2 pixels and the read data of Line 3 is shifted by 4 pixels in the sub-scanning direction. By performing such a process, the shift in the sub-scanning direction is eliminated. By performing this process for each color, the read data read by the photoelectric conversion device 107 has no shift in the sub-scanning direction and becomes the read data corresponding to the image of the document 120.

[0121] The image processing circuit 411 performs image processing such as shading correction processing and filter processing on the read data rearranged by the data sorting unit 410. Note that the setting of the filter and the like required for performing the image processing is set in the register in the image processing circuit 411 by the CPU 1407 when the power is turned on.

[0122] The parallel / serial conversion circuit 412 converts the read data after various image processes output as parallel data from the image processing circuit 411 into serial data. The read data converted into serial data is transmitted to the image output controller 413.

[0123] FIG. 18 is a control flowchart of the CPU 1407 in the present embodiment.

[0124] When the user turns on the power of the document reading apparatus 100, the CPU 1407 performs initial operations such as the startup process of the document reading apparatus control program and the light amount adjustment of the LED light source (Startup of the document reading apparatus 100: S500).

[0125] Next, the CPU 1407 sets data corresponding to the image processing settings in the registers within the image processing circuit 411 (S501).

[0126] Then, the CPU 1407 waits for a read job start command from the operation unit 903 (S502).

[0127] When a read job start command is input by the user (Y in S502), the CPU 1407 causes the white LEDs 109a and 109b, which are light sources, to emit light (S503). The CPU 1407 outputs a control signal to the LED driver 906, and the LED driver 906 supplies current to the LEDs 109a and 109b to cause them to emit light.

[0128] Then, the CPU 1407 outputs a control signal to the motor driver 905, and the motor driver 905 drives the motor 904 to move the reading unit 130 in the sub-scanning direction (S504).

[0129] When the reading is completed (Y in S505), the CPU 1407 turns off the LEDs 109a and 109b and performs control to put the document reading apparatus in a job waiting state.

[0130] In this specification, expressions such as "A or B", "at least one of A and B", "at least one of A or / and B", "one or more of A or / and B" may be used. In this case, unless otherwise explicitly defined, it can include all possible combinations of the listed items. That is, the above expressions are understood to disclose all cases including the case of including at least one A, the case of including at least one B, and the case of including both at least one A and at least one B. This is similarly applicable to combinations of three or more elements.

[0131] The disclosure of this specification includes the complement of the concepts described in this specification. That is, if there is a description in this specification such as "A is B" (A = B), even if the description of "A is not B" (A ≠ B) is omitted, this specification is considered to disclose or imply the meaning of "A is not B". This is because when the description of "A is B" is given, it is assumed that the case of "A is not B" has been considered.

[0132] As described above, the embodiments can be appropriately modified without departing from the technical idea. In addition, the disclosure of this specification includes not only what is described in this specification but also all matters that can be grasped from this specification and the drawings attached to this specification. Further, the disclosure of this specification includes the complement of the concepts described in this specification. That is, if there is a description in this specification such as "A is larger than B", even if the description of "A is not larger than B" is omitted, it can be said that this specification discloses the meaning of "A is not larger than B". This is because when the description of "A is larger than B" is given, it is assumed that the case of "A is not larger than B" has been considered.

[0133] The disclosure of this embodiment includes the following configuration.

[0134] (Configuration 1) Each includes a plurality of pixels including a photoelectric conversion unit, a floating diffusion unit, an amplification transistor that amplifies a signal based on the floating diffusion unit and outputs it as a pixel signal, and includes a gate, and a selection transistor that controls the output of the pixel signal amplified by the amplification transistor. A shield wiring arranged to cover at least a part of the gate in a plan view seen from a direction orthogonal to the plane on which the plurality of pixels are arranged. A first diffusion region that is a source or a drain of the amplification transistor. A second diffusion region that is a source or a drain of the selection transistor. One or more first contacts connected to the first diffusion region. one or more second contacts connected to the second diffusion region, the gate, the first diffusion region, and the second diffusion region are arranged adjacent to each other in a straight line in a first direction, a photoelectric conversion device, wherein in a second direction orthogonal to the first direction, the sum of the widths of the one or more first contacts is greater than the sum of the widths of the one or more second contacts.

[0135] (Configuration 2) each comprising a photoelectric conversion unit, a floating diffusion unit, an amplification transistor that amplifies a signal based on the floating diffusion unit and outputs it as a pixel signal and includes a gate, and a selection transistor that controls the output of the pixel signal amplified by the amplification transistor, and a plurality of pixels, and wiring containing copper as a main component, a first diffusion region that is a source or a drain of the amplification transistor, a second diffusion region that is a source or a drain of the selection transistor, one or more first contacts connected to the first diffusion region and the wiring, one or more second contacts connected to the second diffusion region, the gate, the first diffusion region, and the second diffusion region are arranged adjacent to each other in a straight line in a first direction, a photoelectric conversion device, wherein in a second direction orthogonal to the first direction, the sum of the widths of the one or more first contacts is greater than the sum of the widths of the one or more second contacts.

[0136] (Configuration 3) the one or more first contacts are constituted by one first contact, the one or more second contacts are constituted by one second contact, the photoelectric conversion device according to Configuration 1 or 2, wherein in the second direction, the width of one first contact is greater than the width of the second contact.

[0137] (Configuration 4) The photoelectric conversion device according to Configuration 3, wherein the width of the first contact in the second direction is longer than the length of the first contact in the first direction.

[0138] (Configuration 5) The photoelectric conversion device according to Configuration 1 or 2, wherein the number of the first contacts is larger than the number of the second contacts.

[0139] (Configuration 6) The photoelectric conversion device according to Configuration 5, wherein two or more of the first contacts are arranged in a straight line in the second direction.

[0140] (Configuration 7) The selection transistor includes a gate, The photoelectric conversion device according to any one of Configurations 1 to 6, wherein the gate width of the amplification transistor is larger than the gate width of the selection transistor.

[0141] (Configuration 8) Including a plurality of the selection transistors, The photoelectric conversion device according to any one of Configurations 1 to 7, wherein drains of a plurality of selection transistors are connected to an output of one amplification transistor.

[0142] (Configuration 9) The plurality of pixels are arranged over a plurality of rows and a plurality of columns, having two or more signal lines arranged corresponding to one column of the plurality of columns, The photoelectric conversion device according to Configuration 1, wherein the signal lines are arranged in a wiring layer different from the shield wiring.

[0143] (Configuration 10) The photoelectric conversion device according to Configuration 9, wherein in a plan view, the gate of the amplification transistor, the shield wiring, and the signal lines overlap.

[0144] (Configuration 11) The photoelectric conversion unit is disposed in a semiconductor layer, in the semiconductor layer, light is irradiated from a side opposite to the side where the first contact is connected, and the photoelectric conversion device according to any one of Configurations 1 to 10.

[0145] (Configuration 12) The photoelectric conversion unit is disposed in a first semiconductor layer, a scanning circuit for controlling driving of the plurality of pixels is disposed in a second semiconductor layer, the first semiconductor layer and the second semiconductor layer are laminated, and the photoelectric conversion device according to any one of Configurations 1 to 10.

[0146] (Configuration 13) An element isolation region is disposed between the first diffusion region and the second diffusion region, and the photoelectric conversion device according to any one of Configurations 1 to 12.

[0147] (Configuration 14) A photoelectric conversion device according to any one of Configurations 1 to 13, and a signal processing unit that generates an image using a signal output from the photoelectric conversion device, and a photoelectric conversion system.

[0148] (Configuration 15) A moving body including a photoelectric conversion device according to any one of Configurations 1 to 13, and a control unit that controls movement of the moving body using a signal output from the photoelectric conversion device, and a moving body.

Explanation of Signs

[0149] 14 Amplification unit 15 Selection unit 17 Signal line 401 First diffusion region 402 Second diffusion region 403 First contact 404 Second contact 410 Shield wiring

Claims

1. Comprising a plurality of pixels, each pixel including a photoelectric conversion section, a floating diffusion section, an amplification transistor that amplifies a signal based on the floating diffusion section and outputs it as a pixel signal, and includes a gate, and a selection transistor that controls the output of the pixel signal amplified by the amplification transistor, A shield wiring arranged so as to cover at least a part of the gate in a plan view seen from a direction orthogonal to the plane on which the plurality of pixels are arranged, A first diffusion region that is a source or a drain of the amplification transistor, A second diffusion region that is a source or a drain of the selection transistor, One or more first contacts connected to the first diffusion region, One or more second contacts connected to the second diffusion region, and The gate, the first diffusion region, and the second diffusion region are arranged adjacent to each other in a straight line in a first direction, A photoelectric conversion device, characterized in that in a second direction orthogonal to the first direction, the total width of the one or more first contacts is larger than the total width of the one or more second contacts.

2. Comprising a plurality of pixels, each pixel including a photoelectric conversion section, a floating diffusion section, an amplification transistor that amplifies a signal based on the floating diffusion section and outputs it as a pixel signal, and includes a gate, and a selection transistor that controls the output of the pixel signal amplified by the amplification transistor, and wiring containing copper as a main component, A first diffusion region that is a source or a drain of the amplification transistor, A second diffusion region that is a source or a drain of the selection transistor, One or more first contacts connected to the first diffusion region and the wiring, One or more second contacts connected to the second diffusion region, and The gate, the first diffusion region, and the second diffusion region are arranged adjacent to each other in a straight line in a first direction, A photoelectric conversion device, characterized in that in a second direction orthogonal to the first direction, the total width of the one or more first contacts is larger than the total width of the one or more second contacts.

3. The one or more first contacts are constituted by one first contact, The one or more second contacts are constituted by one second contact, The photoelectric conversion device according to claim 1, wherein in the second direction, the width of one first contact is larger than the width of the second contact.

4. The photoelectric conversion device according to claim 3, wherein the width of the first contact in the second direction is longer than the length of the first contact in the first direction.

5. The one or more first contacts are constituted by one first contact, The one or more second contacts are constituted by one second contact, The photoelectric conversion device according to claim 2, wherein in the second direction, the width of one first contact is larger than the width of the second contact.

6. The photoelectric conversion device according to claim 5, wherein the width of the first contact in the second direction is longer than the length of the first contact in the first direction.

7. The photoelectric conversion device according to claim 1, wherein the number of the first contacts is larger than the number of the second contacts.

8. The photoelectric conversion device according to claim 2, wherein the number of the first contacts is larger than the number of the second contacts.

9. The photoelectric conversion device according to claim 7, wherein two or more of the first contacts are arranged in a straight line in the second direction.

10. The photoelectric conversion device according to claim 8, wherein two or more of the first contacts are arranged in a straight line in the second direction.

11. The selection transistor includes a gate, The photoelectric conversion device according to claim 1, wherein the gate width of the amplification transistor is larger than the gate width of the selection transistor.

12. The selection transistor includes a gate, The photoelectric conversion device according to claim 2, wherein the gate width of the amplification transistor is larger than the gate width of the selection transistor.

13. Including a plurality of the selection transistors, The photoelectric conversion device according to claim 1, wherein the drains of a plurality of selection transistors are connected to the output of one amplification transistor.

14. Including a plurality of the selection transistors, The photoelectric conversion device according to claim 2, wherein the drains of a plurality of selection transistors are connected to the output of one amplification transistor.

15. The plurality of pixels are arranged over a plurality of rows and a plurality of columns. having two or more signal lines arranged corresponding to one column of the plurality of columns, The photoelectric conversion device according to claim 1, wherein the signal lines are arranged in a wiring layer different from the shield wiring.

16. The photoelectric conversion device according to claim 15, wherein in a plan view seen from a direction orthogonal to the plane on which a plurality of pixels are arranged, the gate of the amplification transistor, the shield wiring, and the signal lines overlap.

17. The photoelectric conversion unit is arranged in a semiconductor layer, The photoelectric conversion device according to claim 1, wherein light is irradiated from a side opposite to the side to which the first contact is connected in the semiconductor layer.

18. The photoelectric conversion unit is arranged in a first semiconductor layer, The scanning circuit for controlling the driving of the plurality of pixels is arranged in a second semiconductor layer, The photoelectric conversion device according to claim 1, wherein the first semiconductor layer and the second semiconductor layer are laminated.

19. The photoelectric conversion device according to claim 1, wherein an element isolation region is arranged between the first diffusion region and the second diffusion region.

20. The photoelectric conversion unit is arranged in a semiconductor layer, The photoelectric conversion device according to claim 2, wherein light is irradiated from a side opposite to the side to which the first contact is connected in the semiconductor layer.

21. The photoelectric conversion unit is arranged in a first semiconductor layer, The scanning circuit for controlling the driving of the plurality of pixels is arranged in a second semiconductor layer, The photoelectric conversion device according to claim 2, wherein the first semiconductor layer and the second semiconductor layer are laminated.

22. The photoelectric conversion device according to claim 2, wherein an element isolation region is arranged between the first diffusion region and the second diffusion region.

23. A photoelectric conversion system comprising the photoelectric conversion device according to any one of claims 1 to 22, and a signal processing unit that generates an image using a signal output from the photoelectric conversion device.

24. A moving body comprising the photoelectric conversion device according to any one of claims 1 to 22, the moving body characterized by having a control unit that controls the movement of the moving body using a signal output from the photoelectric conversion device.

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