Vapor deposition apparatus and vapor deposition method using the same

Abstract

To provide a vapor deposition apparatus capable of securing direct infiltration property of a vapor deposition material into a substrate, and a vapor deposition method using the apparatus.SOLUTION: A vapor deposition apparatus 1 comprises: an evaporation source 10 which evaporates a vapor deposition material D; a substrate holding body 20 which is arranged so as to oppose to the evaporation source 10, and holds a substrate; and a vacuum container 30 which houses the evaporation source 10 and the substrate holding body 20. The vacuum container 30 has: an evaporation source housing part 31 which has an opening part 31C open toward the substrate holding body 20, and houses the evaporation source 10; and a substrate holding body housing part 32 which has an opening part 32C open toward the evaporation source 10, and houses the substrate holding body 20. The evaporation source housing part 31 and the substrate holding body housing part 32 are constituted to be connectable via a cylindrical connection member 40.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a vapor deposition apparatus and a vapor deposition method using the same, and to a vapor deposition apparatus including an evaporation source for evaporating a vapor deposition material, a substrate holder for holding a substrate, and a vacuum chamber for housing the evaporation source and the substrate holder, and a vapor deposition method using the same.

Background Art

[0002] Conventionally, various vapor deposition apparatuses for vapor-depositing a vapor deposition material on the surface of a substrate such as a substrate have been proposed. As such a vapor deposition apparatus, for example, there is one disclosed in Patent Document 1.

[0003] The vapor deposition apparatus described in Patent Document 1 includes an evaporation source (film forming source) disposed below in a vacuum chamber (vacuum chamber), a rotary substrate holder (substrate holder) disposed above in the vacuum chamber, and a pressure control means for controlling the pressure in the vacuum chamber. The pressure control means is operated to adjust the internal pressure of the vacuum chamber so as to be within a pressure range determined based on the size of the vacuum chamber, and then a thin film is formed on the substrate (substrate).

[0004] According to such a vapor deposition apparatus, since it is possible to form a thin film filled with film-forming molecules on the surface of the substrate, it is expected to produce (manufacture) a substrate excellent in abrasion resistance and the like.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] Incidentally, in this type of vapor deposition apparatus, in order to improve the adhesiveness of the vapor deposition material to the substrate, it is effective to attach the vapor deposition material to the surface of the substrate as vertically as possible, that is, to increase the vertical incident component of the vapor deposition material with respect to the substrate.

[0007] However, in the vapor deposition apparatus described in Patent Document 1, although the inside of the vacuum chamber is controlled to an optimal pressure based on the distance between the surface of the substrate and the film forming source (evaporation source), etc., no consideration is given to the perpendicular incidence of the vapor deposition material with respect to the substrate (hereinafter simply referred to as "direct incidence"). Therefore, depending on the shape and size of the substrate holder, etc., there is a high possibility that the adhesiveness of the vapor deposition material will decrease. In such a case, problems such as a decrease in the quality of the thin film will occur.

[0008] Further, if the substrate holder has a structure capable of holding a plurality of substrates like the substrate holder of Patent Document 1, the incident angle of the vapor deposition material is likely to be different for each substrate. For example, in the case of a substrate held on the peripheral side of the substrate holder, it is often difficult to ensure the direct incidence of the vapor deposition material compared to the substrate held on the central side. In such a case, variations in the adhesiveness of the vapor deposition material occur between the substrates, leading to problems such as the inability to simultaneously and stably form high-quality thin films.

[0009] Considering these points, it is difficult to say that the vapor deposition apparatus of Patent Document 1 is sufficient in terms of stably producing high-quality substrates, and it can be said that there is still room for improvement.

[0010] The present invention has been made to solve such problems, and an object thereof is to provide a vapor deposition apparatus capable of ensuring the direct incidence of the vapor deposition material on the substrate and a vapor deposition method using the same.

[0011] The above problems are solved by a vapor deposition apparatus according to the present invention, which is a vapor deposition apparatus for forming a thin film on a substrate, and includes an evaporation source for evaporating a vapor deposition material, a substrate holder arranged to face the evaporation source and holding the substrate, and a vacuum chamber for housing the evaporation source and the substrate holder. The vacuum chamber has an evaporation source side open end that opens toward the substrate holder, and includes an evaporation source housing portion for housing the evaporation source, and a substrate holder side open end that opens toward the evaporation source and includes a substrate holder housing portion for housing the substrate holder. The evaporation source housing portion and the substrate holder housing portion are configured to be connectable via a cylindrical connecting member.

[0012] In the invention related to the vapor deposition apparatus, it is preferable that the evaporation source is arranged such that the central position in the deposition direction view of the thin film coincides with the central position of the substrate holder.

[0013] Furthermore, in the invention related to the vapor deposition apparatus, it is preferable that there are a plurality of the connecting members, and they are formed such that their respective cylinder heights are different.

[0014] The above problems are also solved by a vapor deposition method using a vapor deposition apparatus for forming a thin film on a substrate. The vapor deposition apparatus includes an evaporation source for evaporating a vapor deposition material, a substrate holder arranged to face the evaporation source and holding the substrate, and a vacuum chamber for housing the evaporation source and the substrate holder. The vacuum chamber has an evaporation source side open end that opens toward the substrate holder, and includes an evaporation source housing portion for housing the evaporation source, and a substrate holder side open end that opens toward the evaporation source and includes a substrate holder housing portion for housing the substrate holder. The evaporation source housing portion and the substrate holder housing portion are configured to be connectable via a cylindrical connecting member. The vapor deposition method includes a separation distance adjustment step of directly connecting the evaporation source housing portion and the substrate holder housing portion or connecting them via the cylindrical connecting member to adjust the separation distance between the evaporation source and the substrate holder, and a vapor deposition step of depositing the vapor deposition material on the substrate after the separation distance adjustment step.

Advantages of the Invention

[0015] As described above, according to the vapor deposition apparatus and the vapor deposition method using the same according to the present invention, although the configuration is relatively simple, it is possible to ensure the direct injectability of the vapor deposition material onto the substrate, so that a high-quality substrate can be stably produced.

Brief Description of the Drawings

[0016]

Figure 1

Figure 2

Figure 3

Figure 4

Embodiments for Carrying Out the Invention

[0017] Hereinafter, the vapor deposition apparatus and the vapor deposition method using the same according to the present invention will be described with reference to the drawings based on a preferred embodiment thereof. FIG. 1 is a schematic diagram showing an embodiment of the vapor deposition apparatus according to the present invention, and FIG. 2 is a schematic diagram showing a state in which a cylindrical connecting member is attached to the vapor deposition apparatus of FIG. 1.

[0018] <Overall Configuration of Vapor Deposition Apparatus 1> As shown in FIGS. 1 and 2, the vapor deposition apparatus 1 according to the present embodiment is an apparatus for forming a thin film on the surface of a substrate (see FIG. 3, hereinafter referred to as "substrate SB"), and includes an evaporation source 10, a substrate holder 20, and a vacuum chamber 30. Note that the vapor deposition apparatus 1, the substrate SB, the evaporation source 10, the substrate holder 20, and the vacuum chamber 30 respectively correspond to the "vapor deposition apparatus", "substrate", "evaporation source", "substrate holder", and "vacuum chamber" described in the claims.

[0019] (Evaporation Source 10) The evaporation source 10 is a device for evaporating the deposition material D, and includes a crucible 10a having a depression for placing the deposition material D and other devices. Examples of the other devices include an electron gun (not shown) capable of irradiating an electron beam and a shutter (not shown) for closing and opening the upper part (depression) of the crucible 10a. In the following, for the sake of easy understanding of the technology in the present disclosure, for convenience of explanation, it will be described on the premise that the evaporation source 10 is an electron beam type provided with an electron gun. Note that the above deposition material D corresponds to the "deposition material" described in the claims.

[0020] The evaporation of the deposition material D is performed by irradiating an electron beam to heat the deposition material D filled in the crucible 10a, similar to a known vapor deposition apparatus. The vapor (see FIG. 3, hereinafter referred to as "vapor V") vaporized by such heating is ejected into the vacuum chamber 30 and deposited on the surface of the substrate SB held by the substrate holder 20 (see FIG. 3). Thereby, a thin film with a predetermined film thickness is formed on the surface of the substrate SB.

[0021] Examples of the deposition material D include inorganic substances such as silica (SiO 2 ), titanium oxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ), etc., and organic substances such as fluorine compounds. Further, the form of the deposition material D is not particularly limited, and for example, pellet-shaped ones can be used.

[0022] Here, the substrate SB according to the present embodiment will be described. The substrate SB is, for example, an electrical and electronic device component such as a glass substrate constituting a display surface of a liquid crystal display (Liquid Crystal Display) or an organic EL display (Organic ElectroLuminescence Display), or a component of other industries (for example, optical components and mechanical components), and is formed in a circular plate shape (for example, diameter: 2 inches, 4 inches, 8 inches).

[0023] As materials for such a substrate SB, for example, silicon (Si), silica (SiO 2 ), lithium tantalate (LiTaO 3 ), lithium niobate (LiNbO 3 ) can be used. In the following, a disc-shaped substrate SB will be taken as an example of the base material for explanation, but other things, for example, machine tools, may be used, and the shape thereof may also be other than a circular plate shape.

[0024] (Substrate holder 20) The substrate holder 20 according to the present embodiment is made of a metal member such as stainless steel and is configured to hold a plurality of substrates SB. Specifically, the substrate holder 20 has a plurality of substrate holding openings 20a for holding the substrate SB and is formed in a hollow dome shape (concave shape). The plurality of substrate holding openings 20a are formed at a predetermined interval in the radial direction and along the circumferential direction. Note that the number and position of the substrate holding openings 20a formed in the substrate holder 20 can be appropriately changed according to the size of the substrate SB and the substrate holder 20, etc.

[0025] The substrate holding opening 20a has a shape corresponding to the substrate SB (in this embodiment, "circular plate shape") and is formed to be slightly smaller than the substrate SB. Further, a support portion (not shown) for supporting the substrate SB is formed at the opening periphery of the substrate holding opening 20a. Such a support portion can be realized, for example, by forming a step (notch) on the opening periphery of the substrate holding opening 20a that can be fitted with the peripheral portion of the substrate SB.

[0026] On the outer surface side of the upper part of the substrate holder 20, a rotating shaft 21 protrudes at its central position. The rotating shaft 21 is inserted rotatably in a hermetic state into a hole formed in the substrate holder housing portion 32 (ceiling wall portion 32A), and a driving means (not shown) such as a motor is connected to the tip thereof. The explanation of the substrate holder housing portion 32 will be described later. In addition, the driving means is configured such that the rotation speed and rotation direction of the rotating shaft 21 are controlled by a controller (control means) (not shown).

[0027] In this embodiment, since the substrate holder 20 is configured in this manner, (1) By supporting the back side of the substrate SB in the substrate holding opening 20a, a plurality of substrates SB are attached to the inner surface side of the substrate holder 20, (2) When attaching the evaporated deposition material D (see "vapor V" in FIG. 3), the driving means is driven to rotate the substrate holder 20, By performing operations such as these, the deposition material D can be attached (hereinafter also referred to as "film formation") to the surface of the substrate SB. As a result, it is possible to simultaneously and efficiently perform film formation on a plurality of substrates SB.

[0028] Note that in this embodiment, a rotary substrate holder 20 capable of holding a plurality of substrates SB is shown, but the present invention is not limited to this, and other substrate holders, for example, a substrate holder capable of holding only one substrate, or a substrate holder capable of continuously performing film formation by moving a long substrate in one direction and holding it, may also be used.

[0029] (Vacuum chamber 30) The vacuum chamber 30 is an airtight container (vacuum chamber) made of a metal member such as stainless steel and capable of accommodating the evaporation source 10 and the substrate holder 20 inside. The vacuum chamber 30 according to this embodiment includes an evaporation source accommodating portion 31 and a substrate holder accommodating portion 32 disposed above the evaporation source accommodating portion 31. Although details will be described later, in this embodiment, the evaporation source accommodating portion 31 and the substrate holder accommodating portion 32 are directly connected (see FIG. 1) or connected in a state where a cylindrical connecting member 40 is interposed (see FIG. 2) so as to form a space (accommodating space) capable of accommodating the evaporation source 10 and the substrate holder 20. Note that the evaporation source housing portion 31, the substrate holder housing portion 32, and the cylindrical connecting member 40 respectively correspond to the "evaporation source housing portion", the "substrate holder housing portion", and the "cylindrical connecting member" described in the claims.

[0030] (Evaporation source housing portion 31) The evaporation source housing portion 31 is a member for housing the evaporation source 10, and includes a bottom wall portion 31A, a peripheral wall portion 31B erected from the outer peripheral end of the bottom wall portion 31A, an opening portion 31C that opens at the upper end side of the peripheral wall portion 31B, and a flange portion 31D provided so as to project from the outer peripheral surface of the upper end of the peripheral wall portion 31B. The evaporation source 10 is housed in a region (internal space) partitioned by the bottom wall portion 31A and the peripheral wall portion 31B, and in that state, is arranged on the center line C of the evaporation source housing portion 31. Note that the upper end of the peripheral wall portion 31B corresponds to the "open end on the evaporation source side" described in the claims.

[0031] A hole portion to which one end of the exhaust pipe 50 is connected is formed on the lower end side of the peripheral wall portion 31B. A vacuum pump (not shown) is connected to the other end side of the exhaust pipe 50, and by driving the vacuum pump with the internal space of the vacuum container 30 sealed, it is possible to change the internal space from an atmospheric pressure state to a vacuum state. The explanation regarding sealing the internal space of the vacuum container 30 will be described later.

[0032] (Substrate holder housing portion 32) The substrate holder housing portion 32 is a member for housing the substrate holder 20, and includes a top wall portion 32A, a peripheral wall portion 32B hanging down from the outer peripheral end of the top wall portion 32A, an opening portion 32C that opens at the lower end side of the peripheral wall portion 32B, and a flange portion 32D provided so as to project from the outer peripheral surface of the lower end of the peripheral wall portion 32B. Note that the lower end of the peripheral wall portion 32B corresponds to the "open end on the evaporation source side" described in the claims.

[0033] The substrate holder accommodating portion 32 has substantially the same inner diameter as the evaporation source accommodating portion 31, and a hole through which the rotation shaft 21 of the substrate holder 20 can be inserted is formed at the central position of the top wall portion 32A (on the center line C of the substrate holder accommodating portion 32). The substrate holder 20 is configured to be accommodated in a region (internal space) partitioned by the top wall portion 32A and the peripheral wall portion 32B with the rotation shaft 21 inserted through the hole formed in the top wall portion 32.

[0034] The flange portion 32D is formed in substantially the same shape as the flange portion 31D of the evaporation source accommodating portion 31. In this embodiment, after aligning the flange portion 31D and the flange portion 32D, they are bolted or the like so that the evaporation source accommodating portion 31 and the substrate holder accommodating portion 32 can be hermetically connected (sealed). In this state, by driving a vacuum pump, the internal space of the vacuum vessel 30 can be made into a vacuum state.

[0035] Thus, in this embodiment, since the internal space (evaporation source accommodating portion 31) for accommodating the evaporation source 10 and the internal space (substrate holder accommodating portion 32) for accommodating the substrate holder 20 can be separated, when connecting them, not only can they be directly connected (see FIG. 1), but also it is possible to connect them with a cylindrical connecting member 40 as shown in FIG. 2 interposed therebetween. Hereinafter, such a cylindrical connecting member 40 will be described with reference to FIG. 2.

[0036] (Cylindrical connecting member 40) The cylindrical connecting member 40 is made of a metal member such as stainless steel, and has a hollow cylindrical main body portion 40A, opening portions 40B, 40B that open at both ends thereof, and a pair of flange portions 40C, 40C provided so as to project from the opening peripheries of the opening portions 40B, 40B, respectively.

[0037] The main body portion 40A has a predetermined cylinder height H, and its inner diameter is formed to be substantially the same as the inner diameters of the evaporation source accommodating portion 31 and the substrate holder accommodating portion 32. Also, the inner diameter of the opening portion 40B is formed to be substantially the same as the inner diameters of the opening portion 31C of the evaporation source accommodating portion 31 and the opening portion 32C of the substrate holder accommodating portion 32.

[0038] The flange portion 40C has substantially the same shape as the flange portion 31D of the evaporation source accommodating portion 31 and the flange portion 32D of the substrate holder accommodating portion 32. By bolting or the like, the evaporation source accommodating portion 31 and the substrate holder accommodating portion 32 can be hermetically connected with the cylindrical connecting member 40 interposed therebetween.

[0039] Here, the cylinder height H of the main body portion 40A will be described with reference to FIGS. 2 and 3. FIG. 3(a) is a schematic diagram showing a state in which the evaporation source accommodating portion 31 and the substrate holder accommodating portion 32 are directly connected, and FIG. 3(b) is a schematic diagram showing a state in which the evaporation source accommodating portion 31 and the substrate holder accommodating portion 32 are connected with the cylindrical connecting member 40 interposed therebetween. In FIGS. 3(a) and (b), for ease of understanding of the technology in the present disclosure, the size of the substrate holder 20 with respect to the vacuum vessel 30 (internal space) is exaggeratedly shown.

[0040] As described above, in the present embodiment, when the evaporation material D of the evaporation source 10 is heated with a plurality of substrates SB held by the substrate holder 20, the vapor V is configured to be ejected toward the substrates SB. As shown in FIG. 3(a), in a state where the evaporation source accommodating portion 31 and the substrate holder accommodating portion 32 are directly connected, the distance between the substrate SB and the evaporation source 10 (hereinafter referred to as "SS distance L") is shorter than that in FIG. 3(b), and the incident angle of the vapor V with respect to the surface of the substrate SB is likely to deviate from 90° (perpendicular). In this regard, it can be said that the SS distance L and the incident angle of the vapor V are closely related. In the following, for convenience of explanation, based on the "incident angle of the vapor V with respect to the substrate SB: 90°", the error (deviation) will be referred to as "± angle θ" (see FIGS. 3(a) and (b)).

[0041] As shown in FIG. 3(a), between the substrate SB held on the peripheral edge side of the substrate holder 20 (particularly, the end portion of the substrate SB on the peripheral edge side of the substrate holder 20) and the substrate SB held on the central portion side thereof, the former's "± angle θ2" tends to be larger than the latter's "± angle θ1" ("± angle θ2" > "± angle θ1").

[0042] Generally, when the perpendicular incident component of the vapor V with respect to the substrate SB decreases (when the value of "± angle θ" increases), the adhesiveness of the vapor deposition material D to the substrate SB decreases, so problems such as the formation of a thin film with low density and easy peeling on the substrate SB are likely to occur. Therefore, in the example shown in FIG. 3(a), in the substrate SB held on the central portion side of the substrate holder 20, since the value of "± angle θ" is small (refer to "± angle θ1"), a high-quality thin film can be formed. However, in the substrate SB held on the peripheral edge side thereof, since the value of "± angle θ" becomes relatively large (refer to "± angle θ2"), there is a possibility that a low-quality thin film will be formed. In particular, in the substrate SB held on the peripheral edge side of the substrate holder 20, there is a concern that a lower-quality thin film is more likely to be formed as it approaches the end portion on the peripheral edge side. In such a case, a problem occurs in that there is a variation in quality among the plurality of substrates SB held by the substrate holder 20.

[0043] Therefore, in the present embodiment, when it is assumed that such a problem will occur, in advance, a cylindrical connecting member 40 is interposed between the evaporation source accommodating portion 31 and the substrate holder accommodating portion 32 to increase the SS distance L between the substrate SB and the evaporation source 10 and make the value of "± angle θ" approach "0" as much as possible (refer to FIG. 3(b)). Taking FIGS. 3(a) and (b) as an example, by interposing the cylindrical connecting member 40, · "± angle θ1 > ± angle θ1´" · "± angle θ2 > ± angle θ2´" As described above, it is possible to reduce (bring closer to "0") the "± angle θ" of the vapor V with respect to all the substrates SB. As a result, since it is possible to improve the adhesion of the deposition material D to the substrate SB, it is possible to simultaneously and stably produce high-quality substrates SB.

[0044] Regarding the cylinder height H of the cylindrical connecting member 40, it is possible to set it so that the "± angle θ" becomes equal to or less than a predetermined value according to the shape (for example, the curvature of the inner surface of the substrate holder 20), size, etc. of the substrate holder 20. Taking FIG. 3(b) as an example, based on the substrate SB (in the example of FIG. 3(b), the substrate SB held on the peripheral side of the substrate holder 20) with the longest SS distance L from the evaporation source 10, the cylinder height H of the cylindrical connecting member 40 may be set so that the "± angle θ" is, for example, "±5°" or less.

[0045] Note that it is also possible to prepare in advance a plurality of cylindrical connecting members 40 having different cylinder heights H. In this way, when the above-mentioned problem occurs, it is possible to immediately attach (replace) the cylindrical connecting member 40 with an appropriate cylinder height H between the evaporation source housing portion 31 and the substrate holder housing portion 32, so that it becomes possible to immediately adjust the SS distance L and the "± angle θ" between the substrate SB and the evaporation source 10.

[0046] <Deposition method using the deposition apparatus 1> Next, a deposition method using the above-described deposition apparatus 1 will be described with reference to FIGS. 1 to 4. In the following, it will be described on the premise that a plurality of substrates SB are held on the substrate holder 20 and the evaporation source 10 is filled with the deposition material D.

[0047] As shown in FIG. 4, the deposition method according to the present embodiment includes a separation distance confirmation step S100, a separation distance adjustment step S200, and a deposition step S300. Note that the above vapor deposition method, the separation distance adjustment step S200, and the vapor deposition step S300 respectively correspond to the "vapor deposition method", "separation distance adjustment step", and "vapor deposition step" described in the claims.

[0048] (Separation Distance Confirmation Step S100) As shown in FIG. 4, the vapor deposition method according to this embodiment starts with performing the separation distance confirmation step S100. Specifically, in the separation distance confirmation step S100, an operation is performed to confirm whether the SS distance L between the substrate SB and the evaporation source 10 is adjusted (see FIGS. 1 to 3). The adjustment of the SS distance L between the substrate SB and the evaporation source 10 is performed in the separation distance adjustment step S200 described later.

[0049] In the vapor deposition method according to this embodiment, in the separation distance confirmation step S100, if the SS distance L between the substrate SB and the evaporation source 10 is adjusted, the vapor deposition step S300 is performed; if the adjustment of the SS distance L is not performed, the separation distance adjustment step S200 is performed.

[0050] (Separation Distance Adjustment Step S200) In the separation distance adjustment step S200, as described above, an operation is performed to adjust the SS distance L between the substrate SB and the evaporation source 10. Specifically, in the separation distance adjustment operation S200, for example, (1) As described above, on the substrate SB where the SS distance L between the substrate SB and the evaporation source 10 is the longest, it is confirmed whether the "± angle θ" is within a predetermined angle (for example, "±5°") determined in advance (see FIG. 3), (2) In the above (1), when the "± angle θ" is not within the above-described predetermined angle range, the cylinder height H of the cylindrical connecting member 40 required to be within the predetermined angle range is obtained. (3) The cylindrical connecting member 40 with the cylinder height H obtained in the above (2) is attached between the evaporation source housing portion 31 and the substrate holder housing portion 32. The operations are performed in the following procedure. In the operation (1) described above, when the “± angle θ” is within a predetermined angle range, it is needless to say that the operations (2) and (3) need not be performed.

[0051] In the vapor deposition method according to the present embodiment, after performing the separation distance adjustment step S200, the vapor deposition step S300 is performed.

[0052] (Vapor Deposition Step S300) In the vapor deposition step S300, similar to a known vapor deposition operation, (1) Using a vacuum pump, the back pressure of the internal space of the vacuum chamber 30 is set to, for example, 10 -2 ~10 -5 Pa or so, (2) While rotating the substrate holder 20, the evaporation material D is heated to eject the vapor V, and a thin film is formed on the surface of the substrate SB. The operations are performed in the following procedure.

[0053] In the vapor deposition method according to the present embodiment, after performing the vapor deposition step S300, the operations are configured to be completed.

[0054] As described above, according to the present embodiment, by attaching the cylindrical connecting member 40 with a desired cylinder height H between the evaporation source housing portion 31 and the substrate holder housing portion 32 to the SS distance L between the substrate SB and the evaporation source 10, it is possible to easily adjust the “± angle θ” of the vapor V with respect to the substrate SB. That is, in the present embodiment, since the vertical incident component of the vapor V (evaporation material D) with respect to the substrate SB can be increased, it is possible to surely improve the adhesion of the evaporation material D. As a result, according to the vapor deposition apparatus 1 and the vapor deposition method using the same according to the present embodiment, a high-quality substrate SB can be stably manufactured.

[0055] Furthermore, in the present embodiment, since the evaporation source 10 and the substrate holder 20 are arranged concentrically (see the "center line C" in FIGS. 1 and 2), it is possible to simply and more reliably increase the vertical incident component of the vapor V (deposition material D) on the plurality of substrates SB. As a result, in the present embodiment, high-quality substrates SB can be manufactured more stably.

[0056] In the present embodiment, an electron beam type evaporation source 10 provided with an electron gun is used. In addition to this, it is also possible to further provide a known ion beam source.

[0057] In the present embodiment, the case where the present invention is applied to a vapor deposition apparatus 1 that forms a film using a so-called vacuum vapor deposition method is illustrated. However, the present invention can also be applied to other vapor deposition apparatuses that form a film using other methods, such as a sputtering method or a CVD (chemical vapor deposition) method.

[0058] Furthermore, in the present embodiment, the case where the cylindrical connecting member 40 is formed using a member (metal plate) whose cylinder height H cannot be changed or is difficult to change is illustrated (see FIGS. 1 and 2). However, the present invention is not limited to this, and the cylindrical connecting member 40 can be formed using a member (for example, a bellows) that can change the cylinder height H. In this case, it is also possible to configure the cylinder height H to be changed electrically using a driving means such as a motor. With such a configuration, the SS distance L between the substrate SB and the evaporation source 10 can be flexibly changed without attaching and detaching the cylindrical connecting member 40 from the vacuum chamber 30, so that it can be made highly convenient.

[0059] As described above, the embodiments to which the invention made by the present inventor is applied have been described. However, the present invention is not limited by the description and drawings that form a part of the disclosure of the present invention according to this embodiment. That is, it should be added that all other embodiments, examples, operation techniques, etc. made by those skilled in the art based on this embodiment are of course included in the scope of the present invention.

Description of Reference Numerals

[0060] 1 Evaporation device 10 Evaporation source 10a Crucible 20 Substrate holder (base material holder) 20a Opening for substrate holding 21 Rotation axis 30 Vacuum chamber 31 Evaporation source housing section 31A Bottom wall section 31B Peripheral wall section 31C Opening 31D Flange section 32 Substrate holder housing section (base material holder housing section) 32A Top wall section 32B Peripheral wall section 32C Opening 32D Flange section 40 Cylindrical connecting member 40A Body section 40B Opening 40C Flange section 50 Exhaust pipe SB Substrate (base material) D Evaporation material V Vapor C Center line H Cylinder height L SS distance θ1, θ1´, θ2, θ2´ ± angles

Claims

1. A vapor deposition apparatus for forming a thin film on a substrate, comprising: an evaporation source for evaporating a vapor deposition material; a substrate holder arranged to face the evaporation source and holding the substrate; a vacuum chamber housing the evaporation source and the substrate holder; wherein the vacuum chamber has an evaporation source side open end opening toward the substrate holder and an evaporation source accommodating portion for accommodating the evaporation source; has a substrate holder side open end opening toward the evaporation source and a substrate holder accommodating portion for accommodating the substrate holder; and the evaporation source accommodating portion and the substrate holder accommodating portion are configured to be connectable via a cylindrical connecting member.

2. The vapor deposition apparatus according to claim 1, wherein the evaporation source is arranged such that a central position in a direction of view of vapor deposition of the thin film coincides with a central position of the substrate holder.

3. The vapor deposition apparatus according to claim 1 or claim 2, having a plurality of the cylindrical connecting members, each formed with a different cylinder height.

4. A vapor deposition method using a vapor deposition apparatus for forming a thin film on a substrate, wherein the vapor deposition apparatus comprises an evaporation source for evaporating a vapor deposition material, a substrate holder arranged to face the evaporation source and holding the substrate, and a vacuum chamber housing the evaporation source and the substrate holder; wherein the vacuum chamber has an evaporation source side open end opening toward the substrate holder and an evaporation source accommodating portion for accommodating the evaporation source, has a substrate holder side open end opening toward the evaporation source and a substrate holder accommodating portion for accommodating the substrate holder, and the evaporation source accommodating portion and the substrate holder accommodating portion are configured to be connectable via a cylindrical connecting member; the vapor deposition method includes a separation distance adjustment step of directly connecting the evaporation source accommodating portion and the substrate holder accommodating portion or connecting them via the cylindrical connecting member to adjust a separation distance between the evaporation source and the substrate holder; and a vapor deposition step of vapor depositing the vapor deposition material on the substrate after performing the separation distance adjustment step. ​

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