Display device

Abstract

To provide a display device with high display quality and a display device consuming low power.SOLUTION: The display device includes in a pixel, a first transistor, a second transistor, a first conductive layer, and a light-emitting diode package. The light-emitting diode package includes a first light-emitting diode, a second light-emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer. The first light-emitting diode includes a first electrode and a second electrode. The second light-emitting diode includes a third electrode and a fourth electrode. One of a source and a drain of the first transistor is electrically connected to the first electrode via the second conductive layer. One of a source and a drain of the second transistor is electrically connected to the third electrode via the third conductive layer. The first conductive layer is electrically connected to each of the second electrode and the fourth electrode via the fourth conductive layer. The first conductive layer is supplied with constant potential.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to a display device, a display module, and an electronic device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. As for the technical field of one aspect of the present invention semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), and their driving methods, or their manufacturing methods can be given as an example.

Background Art

[0003] In recent years, display devices using micro light-emitting diodes (micro LEDs (Light Emitting Di ode)) as display elements have been proposed (for example, Patent Document 1). Display devices using micro LEDs as display elements have advantages such as high brightness, high contrast, and long life, and research and development are active as next-generation display devices.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] One aspect of the present invention aims to provide a display device with high definition. One aspect of the present invention aims to provide a display device with high display quality. One aspect of the present invention One of the problems is to provide a display device with low power consumption. One aspect of the present invention is to provide a display device with high reliability. One of the problems is to provide a highly reliable display device.

[0006] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily need to solve all of these problems. It is possible to extract other problems from the description of the specification, drawings, and claims.

Means for Solving the Problems

[0007] The display device according to one aspect of the present invention includes, in a pixel, a first transistor, a second transistor, a first conductive layer, and a light-emitting diode package. The light-emitting diode package includes a first light-emitting diode, a second light-emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer. The first light-emitting diode has a first electrode and a second electrode. The second light-emitting diode has a third electrode and a fourth electrode. One of the source or drain of the first transistor is electrically connected to the first electrode via the second conductive layer. One of the source or drain of the second transistor is electrically connected to the third electrode via the third conductive layer. The first conductive layer is electrically connected to the second electrode via the fourth conductive layer. The first conductive layer is electrically connected to the fourth electrode via the fourth conductive layer. A fixed potential is supplied to the first conductive layer.

[0008] Alternatively, the display device according to one aspect of the present invention includes, in a pixel, a first transistor, a second transistor, a third transistor, a first conductive layer, and a light-emitting diode package. The light-emitting diode package The photodiode package has a first light-emitting diode, a second light-emitting diode, a third light-emitting diode, a second conductive layer, a third conductive layer, a fourth conductive layer, and a fifth conductive layer. The first light-emitting diode has a first electrode and a second electrode. The second light-emitting diode has a third electrode and a fourth electrode. The third light-emitting diode has a fifth electrode and , a sixth electrode. One of the source or drain of the first transistor is electrically connected to the first electrode through the second conductive layer. One of the source or drain of the second transistor is electrically connected to the third electrode through the third conductive layer. One of the source or drain of the third transistor is electrically connected to the fifth electrode through the fifth conductive layer. The first conductive layer is electrically connected to the second electrode through the fourth conductive layer. The first conductive layer is electrically connected to the fourth electrode through the fourth conductive layer. The first conductive layer is electrically connected to the sixth electrode through the fourth conductive layer. A fixed potential is supplied to the first conductive layer.

[0009] The first light-emitting diode, the second light-emitting diode, and the third light-emitting diode are each , preferably a mini light-emitting diode. Or, the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode are each preferably a micro light-emitting diode.

[0010] The first light-emitting diode, the second light-emitting diode, and the third light-emitting diode are each preferably configured to emit light of different colors. For example, the first light-emitting diode emits red light, the second light-emitting diode emits green light, and the third light-emitting diode emits blue ​It is preferable.

[0011] The first transistor, the second transistor, and the third transistor preferably each have a metal oxide in the channel formation region. It is preferable that the fourth conductive layer and the second electrode are electrically connected to each other via a first wire.

[0012] It is preferable that the fourth conductive layer and the fourth electrode are electrically connected to each other via a second wire. It is preferable.

[0013] It is preferable that the second conductive layer and the first electrode are in contact with each other. It is preferable.

[0014] It is preferable that the third conductive layer and the third electrode are electrically connected to each other via a third wire.

[0015] It is preferable. It is preferable.

[0016] One aspect of the present invention has a display device having the above-described configuration, and is a module to which a connector such as a flexible printed circuit (hereinafter referred to as FPC) or a TCP (Tape Carrier Package) is attached, or a module such as a module in which an integrated circuit (IC) is mounted by a COG (Chip On Glass) method or a COF (Chip On Film) method. exible printed circuit, hereinafter referred to as FPC) or TCP (Tape Carrier Package) or the like, or a module such as a module in which an integrated circuit (IC) is mounted by a COG (Chip On Glass) method or a COF (Chip On Film) method. It is a module such as a module in which an integrated circuit (IC) is mounted by a COG (Chip On Glass) method or a COF (Chip On Film) method.

[0017] One aspect of the present invention is an electronic device having the above-described module and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button. It is an electronic device having at least one of a microphone and an operation button.

Advantages of the Invention

[0018] According to one aspect of the present invention, a display device with high definition can be provided. According to one aspect of the present invention, a display device with high display quality can be provided. According to one aspect of the present invention, a display device with low power consumption can be provided. According to one aspect of the present invention, a display device with high reliability can be provided. Note that the description of these effects does not prevent the existence of other effects. One aspect of the present invention does not necessarily have to have all of these effects. It is possible to extract other effects from the description of the specification, drawings, and claims.

[0019]

Brief Description of the Drawings

[0020]

Figure 1

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Mode for Carrying Out the Invention

[0021] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and those skilled in the art can easily understand that the form and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments shown below. In addition, in the configuration of the invention described below, the same parts or parts having the same functions are commonly used with the same reference numerals among different drawings, and the repeated description thereof will be omitted. Also, when referring to the same function, the hatch pattern may be the same and may not be particularly labeled. Moreover, the positions, sizes, ranges, etc. of each configuration shown in the drawings may not represent the actual positions, sizes, ranges, etc. for the sake of easy understanding. For this reason, the disclosed invention is not necessarily limited to the positions, sizes, ranges, etc. disclosed in the drawings. In addition, the terms "film" and "layer" can be interchanged with each other depending on the case or situation. For example, the term "conductive layer" can be changed to the term "conductive film". Or, for example, the term "insulating film" can be changed to the term "insulating layer".

[0022] In addition, in the configuration of the invention described below, the same parts or parts having the same functions are commonly used with the same reference numerals among different drawings, and the repeated description thereof will be omitted. Also, when referring to the same function, the hatch pattern may be the same and may not be particularly labeled. Moreover, the positions, sizes, ranges, etc. of each configuration shown in the drawings may not represent the actual positions, sizes, ranges, etc. for the sake of easy understanding. For this reason, the disclosed invention is not necessarily limited to the positions, sizes, ranges, etc. disclosed in the drawings. In addition, the terms "film" and "layer" can be interchanged with each other depending on the case or situation. For example, the term "conductive layer" can be changed to the term "conductive film". Or, for example, the term "insulating film" can be changed to the term "insulating layer".

[0023] Moreover, the positions, sizes, ranges, etc. of each configuration shown in the drawings may not represent the actual positions, sizes, ranges, etc. for the sake of easy understanding. For this reason, the disclosed invention is not necessarily limited to the positions, sizes, ranges, etc. disclosed in the drawings. In addition, the terms "film" and "layer" can be interchanged with each other depending on the case or situation. For example, the term "conductive layer" can be changed to the term "conductive film". Or, for example, the term "insulating film" can be changed to the term "insulating layer". In addition, the terms "film" and "layer" can be interchanged with each other depending on the case or situation. For example, the term "conductive layer" can be changed to the term "conductive film". Or, for example, the term "insulating film" can be changed to the term "insulating layer".

[0024] In addition, the terms "film" and "layer" can be interchanged with each other depending on the case or situation. For example, the term "conductive layer" can be changed to the term "conductive film". Or, for example, the term "insulating film" can be changed to the term "insulating layer". For example, the term "conductive layer" can be changed to the term "conductive film". Or, for example, the term "insulating film" can be changed to the term "insulating layer". It is possible to change.

[0025] (Embodiment 1) In this embodiment, a display device according to an aspect of the present invention will be described with reference to FIGS. 1 to 7.

[0026] [Outline of the display device] The display device of the present embodiment includes, for each pixel, a first transistor, a second transistor, a first conductive layer, and a light-emitting diode package (also referred to as an LED package).

[0027] The LED package has a structure in which one or more light-emitting diodes (or light-emitting diode chips (also referred to as LED chips)) are encapsulated in a lead frame, a board, or a case. It has such a configuration.

[0028] The LED package includes a first light-emitting diode, a second light-emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer.

[0029] The first light-emitting diode has a first electrode and a second electrode. The first electrode functions as a pixel electrode of the first light-emitting diode. One of the source or drain of the first transistor is electrically connected to the first electrode via the second conductive layer.

[0030] The second light-emitting diode has a third electrode and a fourth electrode. The third electrode functions as a pixel electrode of the second light-emitting diode. One of the source or drain of the second transistor is electrically connected to the third electrode via the third conductive layer.

[0031] The second electrode functions as a common electrode of the first light-emitting diode, and the fourth electrode functions as a common electrode of the second light-emitting diode. The first conductive layer is electrically connected to the second electrode via the fourth conductive layer. The first conductive layer is electrically connected to the fourth electrode via the fourth conductive layer. A fixed potential is supplied to the first conductive layer.

[0032] The display device according to this embodiment can be manufactured by mounting an LED package on a circuit board on which a plurality of transistors are formed. Therefore, compared with the method of mounting light-emitting diodes (or LED chips) one by one on the circuit board, the manufacturing time of the display device can be shortened, and the manufacturing difficulty can be reduced. As a result, the yield of manufacturing the display device can be increased. In addition, high definition and large size of the display device can be achieved. The display device according to this embodiment has a function of displaying an image using a light-emitting diode. Since the light-emitting diode is a self-luminous element, when a light-emitting diode is used as a display element, a backlight is not required for the display device, and a polarizing plate does not need to be provided. Therefore, the power consumption of the display device can be reduced, and the display device can be made thinner and lighter. In addition, a display device using a light-emitting diode as a display element has high contrast and a wide viewing angle, so high display quality can be obtained. Also, by using an inorganic material as the light-emitting material, the life of the display device can be extended and the reliability can be improved. In this specification and the like, a light-emitting diode with a chip area of 10,000 μm or less may be referred to as a micro LED, a light-emitting diode with a chip area larger than 10,000 μm

[0033] and less than 1 mm may be referred to as a mini LED, and a light-emitting diode with a chip area larger than 1 mm may be referred to as a macro LED. For example, a light-emitting diode with an outer chip dimension of 100 μm or less is a micro LED (ma cro LED).

[0034] 2 2 2 2

[0035] 2 It can be said to be a micro LED chip). For example, a micro LED chip or a mini LED chip can be used in a 1 mm□ LED package.

[0036] In the display device according to one aspect of the present invention, any of micro LEDs, mini LEDs, and macro LEDs may be used. In particular, the display device according to one aspect of the present invention preferably has a micro LED or a mini LED, and more preferably has a micro LED.

[0037] The area of the chip of the light-emitting diode is preferably 1 mm 2 or less, more preferably 10000 μm 2 or less, still more preferably 3000 μm 2 or less, even more preferably 700 μm 2 or less.

[0038] The area of the region for emitting the light of the light-emitting diode is preferably 1 mm 2 or less, more preferably 10000 μm 2 or less, even more preferably 3000 μm 2 or less, even more preferably 700 μm 2 or less, and even more preferably.

[0039] In the present embodiment, in particular, an example in the case of using a micro LED as the light-emitting diode will be described. In the present embodiment, a micro LED having a double heterojunction will be described. However, the light-emitting diode is not particularly limited, and for example, a micro LED having a quantum well junction, an LED using a nanocolumn, or the like may be used.

[0040] The transistor included in the display device preferably has a metal oxide in the channel formation region. A transistor using a metal oxide can reduce power consumption. Therefore,​​​​​​ By combining with a micro LED, a display device with extremely low power consumption can be realized. This can be achieved.

[0041] [Configuration Example 1 of Display Device] Fig. 1(A) shows a top view of the display device 100. The display device 100 has a plurality of pixels 130 in the display unit 110. A plurality of pixels 130 are provided in the display unit 110 in a matrix form. Signals and power are supplied to the display unit 110 from the FPC1 and FPC2 via the wiring 108.

[0042] Fig. 1(B) shows a top view of the display device 100A. The display device 100A has a circuit 109 between the display unit 110 and the wiring 108. Signals and power are supplied to the display unit 110 and the circuit 109 from the FPC1 or FPC2 via the wiring 108.

[0043] The display device according to one aspect of the present invention can incorporate one or both of a scanning line driver circuit (gate driver) and a signal line driver circuit (source driver). Alternatively, the display device according to one aspect of the present invention can be configured without incorporating one or both of the gate driver and the source driver, and with an external driver. For example, an IC that functions as a gate driver or a source driver can be electrically connected to the display device. The IC can be mounted on the display device by the COG method or the COF method. Alternatively, an FPC, a TAB (Tape Automated Bonding) tape, or a TCP etc. on which the IC is mounted can be connected to the display device.

[0044] As the circuit 109, for example, one or both of a gate driver and a source driver ​​can be applied.

[0045] FIG. 1(C) shows a top view of a pixel 130 included in the display device 100. One pixel 130 is provided with one LED package 150. That is, in the display unit 110 shown in FIG. 1(A) a plurality of LED packages 150 are provided in a matrix.

[0046] The pixel 130 has a conductive layer 131R, a conductive layer 131G, a conductive layer 131B, a conductive layer 132, and an LED package 150.

[0047] FIG. 1(D) shows a top view of the LED package 150 included in the pixel 130.

[0048] The LED package 150 has at least one LED chip. In the present embodiment an example is shown in which the LED package 150 has a red LED chip 151R, a green LED chip 151 G, and a blue LED chip 151B. That is, in the present embodiment, the pixel 130 has a configuration in which one color is expressed by three sub-pixels of R (red), G (green), and B (blue). is applied.

[0049] In addition, a configuration in which one color is expressed by four sub-pixels of R, G, B, and W (white), or a configuration in which one color is expressed by four sub-pixels of R, G, B, and Y (yellow), etc. can be applied. Also, there is no limitation to color elements, and colors other than RGBWY (for example, cyan or magenta etc.) may be used.

[0050] The LED package 150 further has a heat sink 154, electrodes 152R, electrodes 152G electrodes 152B, and an electrode 153.

[0051] The red LED chip 151R is located on the electrode 152R. The green LED chip 151 G and the blue LED chip 151B are located on the heat sink 154.

[0052] The red LED chip 151R, the green LED chip 151G, and the blue LED chip 1 51B are each electrically connected to the electrode 153 via a wire 143.

[0053] The red LED chip 151R, the green LED chip 151G, and the blue LED chip 1 51B preferably have light-emitting diodes that exhibit light of different colors. This eliminates the need for the step of forming a color conversion layer. Therefore, the manufacturing cost of the LED chips can be suppressed.

[0054] Also, the red LED chip 151R, the green LED chip 151G, and the blue LED chip 151B may have light-emitting diodes that exhibit light of the same color. At this time, the light emitted from the light-emitting diode may be taken out to the outside of the display device through one or both of the color conversion layer and the coloring layer. One or both of the color conversion layer and the coloring layer can be provided inside or above the LED package 1 50.

[0055] Also, the display device of this embodiment may have a light-emitting diode that exhibits infrared light. The light-emitting diode that exhibits infrared light can be used, for example, as a light source for an infrared light sensor.

[0056] FIG. 2(A) shows a cross-sectional view between the dashed-dotted line A - B in FIG. 1(C). That is, FIG. 2(A ) shows the blue LED chip 151B and the blue LED chip 151B electrically connected ​​​​2A is a cross-sectional view including the conductive layer 131B and the conductive layer 132. For clarity, some components such as wiring are omitted.

[0057] The green LED chip 151G is electrically connected to the green LED chip 151G. The cross-sectional structure including the conductive layer 131G and the conductive layer 132 is also the same as that shown in FIG. For this purpose, please refer to the following explanation.

[0058] As shown in FIG. 2A, in the display device 100, the transistor 120 includes a conductive layer 131B 1. The LED package 150 is electrically connected thereto via the

[0059] The transistor 120 includes a conductive layer 121 functioning as a back gate, a gate insulating layer The insulating layer 122 functions as a semiconductor layer, and the metal oxide layer 123 functions as a semiconductor layer (channel formation region 123i and a pair of low resistance regions 123n, each electrically connected to the low resistance region 123n a pair of conductive layers 126a and 126b that are connected to each other; an insulating layer 124 that functions as a gate insulating layer; The conductive layer 121 and the metal oxide layer 123 are connected to the gate electrode 124 and the conductive layer 125, which functions as a gate. The conductive layer 125 and the metal oxide layer 123 overlap each other via the insulating layer 122. Overlap via.

[0060] An insulating layer 127 is provided on the transistor 120, and a conductive layer 1 is formed on the insulating layer 127. 31B and a conductive layer 132 are provided. The conductive layer 131B is electrically connected to the conductive layer 126b.

[0061] At least one of the insulating layers 124 and 127 is free of impurities such as water or hydrogen. It is preferable to use a material that is difficult to diffuse. Impurities from the outside diffuse into the transistor This can effectively suppress this, and the reliability of the display device can be improved. The absolute Insulating layer 127 has a function as a planarization layer.

[0062] In FIG. 2(A), the transistor 120 is provided on the substrate 102 via the insulating layer 104 The insulating layer 104 has a function as an underlayer film. The insulating layer 104 prevents impurities such as water and hydrogen from diffusing from the substrate 10 2 into the transistor 120, and functions as a barrier layer that prevents oxygen from desorbing from the metal oxide layer 123 to the insulating layer 104 side. As the insulating layer 104, for example, a film such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film in which hydrogen and oxygen diffuse less easily than a silicon oxide film can be used. Note that the transistor 120 may be formed directly on the substrate 102 without providing the insulating layer 104 ..

[0063] The ends of the conductive layer 131B and the ends of the conductive layer 132 are covered by the protective layer 128. The protective layer 128 has an opening that reaches the upper surface of the conductive layer 131B and an opening that reaches the upper surface of the conductive layer 132 In the opening, the conductive layer 131B and the conductive layer 132 are each electrically connected to the LED package 150 via the conductor 133.

[0064] As the material of the protective layer 128, resins such as acrylic, polyimide, epoxy, and silicone are suitable. By providing the protective layer 128, it is possible to suppress the conductors 133 on the conductive layer 131B and the conductors 133 on the conductive layer 132 from coming into contact and short-circuiting. Note that the protective layer 1 28 may not be provided. ..

[0065] For the conductor 133, for example, conductive pastes such as silver, carbon, copper, and bumps such as gold and solder can be preferably used. Also, for the conductive layers 131R, 131G, 131B, 132 and the electrodes 152R, 152G, 152B, 153 connected to the conductor 133, it is preferable to use conductive materials with low contact resistance with the conductor 133 respectively. For example, when silver paste is used for the conductor 133, if the conductive materials connected to these are aluminum, titanium, copper, an alloy of silver (Ag), palladium (Pd), and copper (Cu) (Ag-Pd-Cu (APC)), etc., the contact resistance is preferably low. The conductor 133 may be provided on the substrate 102 or on the LED package 150 side. For example, after providing the conductor 133 on the conductive layers 131R, 131G, 131B, 132 respectively, by connecting the conductor 133 and the LED package 150, the LED package 150 can be mounted on the substrate 102. In addition, for the conductive layers 131R, 131G, 131B, 132, and the electrodes 152R, 152G, 152B, 153, it is preferable to use conductive materials with low contact resistance with the conductor 133 respectively. For example, when silver paste is used for the conductor 133, if the conductive materials connected to these are aluminum, titanium, copper, an alloy of silver (Ag), palladium (Pd), and copper (Cu) (Ag-Pd-Cu (APC)), etc., the contact resistance is preferably low. For example, when silver paste is used for the conductor 133, if the conductive materials connected to these are aluminum, titanium, copper, an alloy of silver (Ag), palladium (Pd), and copper (Cu) (Ag-Pd-Cu (APC)), etc., the contact resistance is preferably low. For example, when silver paste is used for the conductor 133, if the conductive materials connected to these are aluminum, titanium, copper, an alloy of silver (Ag), palladium (Pd), and copper (Cu) (Ag-Pd-Cu (APC)), etc., the contact resistance is preferably low. For example, when silver paste is used for the conductor 133, if the conductive materials connected to these are aluminum, titanium, copper, an alloy of silver (Ag), palladium (Pd), and copper (Cu) (Ag-Pd-Cu (APC)), etc., the contact resistance is preferably low.

[0066] The conductor 133 may be provided on the substrate 102 or on the LED package 150 side. For example, after providing the conductor 133 on the conductive layers 131R, 131G, 131B, 132 respectively, by connecting the conductor 133 and the LED package 150, the LED package 150 can be mounted on the substrate 102. For example, after providing the conductor 133 on the conductive layers 131R, 131G, 131B, 132 respectively, by connecting the conductor 133 and the LED package 150, the LED package 150 can be mounted on the substrate 102. For example, after providing the conductor 133 on the conductive layers 131R, 131G, 131B, 132 respectively, by connecting the conductor 133 and the LED package 150, the LED package 150 can be mounted on the substrate 102.

[0067] Note that a plurality of light-emitting diodes may be electrically connected to one transistor.

[0068] The side surface of the LED package 150 may be covered with the resin 129. Using a black resin as the resin 129 is preferable because it can enhance the display contrast. Also, a surface protection layer, an impact absorption layer, etc. may be provided on the upper surface of the LED package 150. Since the LED package 150 is configured to extract light upward, the layer provided on the upper surface of the LED package 150 preferably has transparency to visible light. The side surface of the LED package 150 may be covered with the resin 129. Using a black resin as the resin 129 is preferable because it can enhance the display contrast. Also, a surface protection layer, an impact absorption layer, etc. may be provided on the upper surface of the LED package 150. Since the LED package 150 is configured to extract light upward, the layer provided on the upper surface of the LED package 150 preferably has transparency to visible light. The side surface of the LED package 150 may be covered with the resin 129. Using a black resin as the resin 129 is preferable because it can enhance the display contrast. Also, a surface protection layer, an impact absorption layer, etc. may be provided on the upper surface of the LED package 150. Since the LED package 150 is configured to extract light upward, the layer provided on the upper surface of the LED package 150 preferably has transparency to visible light. The side surface of the LED package 150 may be covered with the resin 129. Using a black resin as the resin 129 is preferable because it can enhance the display contrast. Also, a surface protection layer, an impact absorption layer, etc. may be provided on the upper surface of the LED package 150. Since the LED package 150 is configured to extract light upward, the layer provided on the upper surface of the LED package 150 preferably has transparency to visible light. The side surface of the LED package 150 may be covered with the resin 129. Using a black resin as the resin 129 is preferable because it can enhance the display contrast. Also, a surface protection layer, an impact absorption layer, etc. may be provided on the upper surface of the LED package 150. Since the LED package 150 is configured to extract light upward, the layer provided on the upper surface of the LED package 150 preferably has transparency to visible light.

[0069] The substrate 102 may be an insulating substrate such as a glass substrate, a quartz substrate, a sapphire substrate, or a ceramic substrate. A single crystal semiconductor substrate made of silicon or silicon carbide, or a polycrystalline semiconductor substrate made of silicon or silicon carbide, etc. Conductor substrates, compound semiconductor substrates such as silicon germanium, and semiconductor substrates such as SOI substrates It can be used.

[0070] The substrate 102 preferably blocks visible light (is non-transparent to visible light). Since the substrate 102 blocks visible light, the transistor 120 formed on the substrate 102 is not exposed to light from the outside. However, one embodiment of the present invention is not limited thereto, The substrate 102 may be transparent to visible light.

[0071] The substrate 102 is made up of a reflective layer that reflects light from the light-emitting diode and a light-shielding layer that blocks the light. It may have either one or both.

[0072] The LED package 150 has a plurality of light emitting diodes (LED chips) of the same configuration. Each of the transistors may be driven by a different configuration. For example, a transistor for driving the red LED chip 151R and a transistor for driving the green LED chip 151R may be used. A transistor drives the LED chip 151G, and a transistor drives the blue LED chip 151B. The transistors to be used are determined by the size, channel length, channel width, and structure of the transistor. Any one of them may be different from each other. Depending on the amount of current required for each color, the channel length and channel width of the transistor are adjusted. Or both may be changed.

[0073] Materials that can be used for various conductive layers constituting the display device of this embodiment include , aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum Metals such as nickel, silver, tantalum, or tungsten, or alloys with these as the main components. In addition, films containing these materials can be used as single layers or as laminated structures. For example, a single-layer structure of an aluminum film containing silicon, an aluminum film on a titanium film, Two-layer structure with a tungsten film on top of an aluminum film; two-layer structure with a copper film on top of a tungsten film; A two-layer structure in which a copper film is laminated on a magnesium-aluminum alloy film, and a copper film is laminated on a titanium film Two-layer structure with copper film on tungsten film, two-layer structure with titanium film or titanium nitride film A titanium film is then laminated on top of the silicon film, and then an aluminum or copper film is laminated on top of that. A three-layer structure in which a titanium nitride film or a molybdenum nitride film is formed, a molybdenum film or a molybdenum nitride film, and An aluminum film or copper film is laminated on top of the substrate, and a molybdenum film or molybdenum nitride film is then laminated on top of that. There are three-layer structures that form an indium oxide film. In addition, when copper containing manganese is used, the shape by etching can be easily obtained. This is preferable because it improves controllability.

[0074] Materials that can be used for the various insulating layers constituting the display device of this embodiment include Resins such as acrylic, polyimide, epoxy, and silicone, silicon oxide, silicon oxynitride, etc. Examples of inorganic insulating materials include silicon, silicon oxide nitride, silicon nitride, and aluminum oxide. can be done.

[0075] The LED package 150 will be described in more detail with reference to FIG. 2(B). The blue LED chip 151B will be described in more detail below with reference to the accompanying drawings.

[0076] The LED package 150 shown in FIG. 2(B) includes a substrate 141, a blue LED chip 151B , an electrode 152B, an electrode 153, a heat sink 154, an adhesive layer 146, a case 142, a wire 143, a wire 144, and a sealing layer 145.

[0077] The blue LED chip 151B is bonded onto the substrate 141 by the adhesive layer 146 . The blue LED chip 151B is provided so as to overlap with the heat sink 154 via the adhesive layer 146 . Although there is no particular limitation on the material of the adhesive layer 146, as will be described later, the red LED chip 151R is bonded to the electrode 152R so as to be electrically connected to the electrode 152R . Therefore, if the adhesive layer 146 has conductivity, the materials of the adhesive layer 146 for each color LED chip can be made uniform, which is preferable. Also, in the case of the blue LED chip and the green LED chip, it is preferable to use an adhesive having conductivity as the adhesive layer 146 because the heat dissipation property is enhanced . The heat sink 154 can be formed of the same material and in the same process as the electrodes 152B and 153.

[0078] For the substrate 141, a glass epoxy resin substrate, a polyimide substrate, a ceramic substrate, an alumina substrate, an aluminum nitride substrate, etc. can be used.

[0079] The blue LED chip 151B shown in FIG. 2(C) has a structure in which a light emitting diode (LED ) is provided on the substrate 101. The light emitting diode includes a semiconductor layer 111, an electrode 112, a light emitting layer 113, a semiconductor layer 114, an electrode 115, and an electrode 116.

[0080] Electrode 112 is electrically connected to the semiconductor layer 111. Electrode 116 is electrically connected to the semiconductor layer 114 through electrode 115. Only one of electrode 115 and electrode 116 may be provided. The light-emitting layer 113 is sandwiched between the semiconductor layer 111 and the semiconductor layer 114. In the light-emitting layer 113, electrons and holes are combined to emit light. Among the semiconductor layer 111 and the semiconductor layer 114, one is an n-type semiconductor layer and the other is a p-type semiconductor layer.

[0081] In the blue LED chip 151B, the stacked structure including the semiconductor layer 111, the light-emitting layer 113, and the semiconductor layer 114 is formed to exhibit blue light.

[0082] Note that in each color light-emitting diode, the stacked structure having a pair of semiconductor layers and a light-emitting layer between the pair of semiconductor layers is formed to exhibit light such as red, yellow, green, or blue. For example, gallium phosphide compounds, gallium arsenide compounds, gallium aluminum arsenide compounds, aluminum gallium indium phosphide compounds, gallium nitride, indium gallium nitride compounds, selenium zinc compounds, etc. can be used for the stacked structure.

[0083] As the substrate 101, for example, single crystal substrates such as sapphire (Al2O3) substrate, silicon carbide (SiC) substrate, silicon (Si) substrate, gallium nitride (GaN) substrate, etc. can be used.

[0084] Electrode 112 is electrically connected to electrode 152B through wire 143. Electrode 112 functions as a pixel electrode of the light-emitting diode. Electrode 116 is connected to ​​​​​It is electrically connected to the electrode 153. The electrode 116 functions as a common electrode of the light-emitting diode. To do.

[0085] The electrode 152B and the electrode 153 can each be formed of an element selected from nickel, copper, silver, platinum, or gold, or an alloy material containing 50% or more of the element. It can be formed of an alloy material containing 50% or more of the element.

[0086] For the connection between the electrode 152B and the electrode 112, and the connection between the electrode 153 and the electrode 116, wire bonding using a thermocompression bonding method or an ultrasonic bonding method can be used respectively. It can be used respectively. It can be.

[0087] For the wire 143 and the wire 144, fine wires of metal formed of gold, an alloy containing gold, copper, or an alloy containing copper can be used respectively. It can be used.

[0088] Resin can be used for the material of the case 142. The case 142 only needs to cover at least the side surface of the blue LED chip 151B, and does not need to overlap the upper surface of the blue LED chip 151B. For example, on the upper surface side of the blue LED chip 151B, the sealing layer 145 may be exposed. It is preferable to provide a reflector made of ceramic or the like around the blue LED chip 151B on the inner side surface of the case 142. By reflecting a part of the light emitted by the blue LED chip 151B by the reflector, more light can be taken out from the LED package 150. It does not need to overlap. For example, on the upper surface side of the blue LED chip 151B, the sealing layer 145 may be exposed. For example, on the upper surface side of the blue LED chip 151B, the sealing layer 145 may be exposed. On the inner side surface of the case 142, specifically, around the blue LED chip 151B, it is preferable to provide a reflector made of ceramic or the like. By reflecting a part of the light emitted by the blue LED chip 151B by the reflector, more light can be taken out from the LED package 150. By reflecting a part of the light emitted by the blue LED chip 151B by the reflector, more light can be taken out from the LED package 150. It can be taken out.

[0089] The inside of the case 142 is filled with a sealing layer 145. As the sealing layer 145, a resin having transparency to visible light is suitable. As the sealing layer 145, for example, epoxy resin It is suitable. As the sealing layer 145, for example, epoxy resin Ultraviolet curable resins such as fats and silicone resins, visible light curable resins, etc. can be used. .

[0090] Figure 3(A) shows a cross-sectional view between the dashed line C-D in Figure 1(C). That is, Figure 3(A ) is a cross-sectional view including a red LED chip 151R and conductive layers 131R and 132 that are electrically connected to the red LED chip 151R. In Figure 3(A), , for clarity, some components such as wiring are omitted. .

[0091] As shown in Figure 3(A), in the display device 100, the transistor 120A is electrically connected to the LED package 150 via the conductive layer 131 R.

[0092] Since the transistor 120A has the same configuration as the transistor 120 shown in Figure 2(A), detailed description is omitted.

[0093] An insulating layer 127 is provided on the transistor 120A, and the conductive layers 131 R and the conductive layer 132 are provided on the insulating layer 127. Through an opening provided in the insulating layer 127, the conductive layer 131R is electrically connected to the conductive layer 126b.

[0094] The conductive layer 131R and the conductive layer 132 are each electrically connected to the LED package 150 via a conductor 133.

[0095] The LED package 150 will be described in more detail with reference to Figure 3(B). Also, the red LED chip 151R will be described in more detail with reference to Figure 3(C). .

[0096] The LED package 150 shown in Figure 3(B) includes a substrate 141 and a red LED chip 151R. , electrode 152R, electrode 153, adhesive layer 146, case 142, wire 144, and encapsulation layer It has 145.

[0097] The red LED chip 151R is electrically connected to the electrode 152R via the conductive adhesive layer 146. It is electrically connected.

[0098] The red LED chip 151R shown in Fig. 3(C) has an electrode 103, a semiconductor layer 117, a light-emitting layer 118, a semiconductor layer 119, and an electrode 106. The red LED chip 151R can also be called a light-emitting diode (LED). Also, the red LED chip may have a configuration in which a light-emitting diode is provided on a conductive substrate. It may be a configuration in which a light-emitting diode is provided on a conductive substrate. It may be a configuration in which a light-emitting diode is provided on a conductive substrate.

[0099] The electrode 103 is electrically connected to the semiconductor layer 117. The electrode 106 is electrically connected to the semiconductor layer 11 9. The light-emitting layer 118 is sandwiched between the semiconductor layer 117 and the semiconductor layer 119. In the light-emitting layer 118, electrons and holes combine to emit light. Of the semiconductor layer 117 and the semiconductor layer 119, one is an n-type semiconductor layer and the other is a p-type semiconductor layer. Of the semiconductor layer 117 and the semiconductor layer 119, one is an n-type semiconductor layer and the other is a p-type semiconductor layer. Of the semiconductor layer 117 and the semiconductor layer 119, one is an n-type semiconductor layer and the other is a p-type semiconductor layer.

[0100] The electrode 103 is electrically connected to the electrode 152R via the adhesive layer 146. The electrode 103 functions as a pixel electrode of the light-emitting diode. The electrode 106 is electrically connected to the electrode 153 via the wire 144. The electrode 106 functions as a common electrode of the light-emitting diode. functions as a common electrode of the light-emitting diode. functions as a common electrode of the light-emitting diode.

[0101] As shown in the LED package 155 in Fig. 3(D), a color conversion layer 147 may be provided inside the case 142. Thereby, the light of the light-emitting diode is emitted to the outside of the LED package 155 through the color conversion layer 147. Thereby, the light of the light-emitting diode is emitted to the outside of the LED package 155 through the color conversion layer 147. Thereby, the light of the light-emitting diode is emitted to the outside of the LED package 155 through the color conversion layer 147.

[0102] In FIG. 3(D), a configuration is shown in which the color conversion layer 147 is provided above the sealing layer 145, but the arrangement of the color conversion layer 147 is not limited to this. For example, the color conversion layer 147 may be dispersed inside the sealing layer 14 5.

[0103] As the color conversion layer 147, it is preferable to use a phosphor or quantum dots (QD: Quantum dot). In particular, quantum dots have a narrow peak width of the emission spectrum and can obtain light emission with good color purity. This can improve the display quality of the display device.

[0104] For example, when all of the plurality of LED chips included in the LED package 155 are light-emitting diodes that emit blue light, it is preferable that a color conversion layer 147 is provided inside or above the LED package 155. Specifically, a color conversion layer 147 that converts blue light to red is provided at a position overlapping with the red LED chip 151R, and a color conversion layer 147 that converts blue light to green is provided at a position overlapping with the green LED chip 151G.

[0105] As a result, in the red sub-pixel, the light emitted by the light-emitting diode is converted from blue to red by the color conversion layer 147 and emitted to the outside of the display device. Also, in the green sub-pixel, the light emitted by the light-emitting diode is converted from blue to green by the color conversion layer 147 and emitted to the outside of the display device. Further, in the blue sub-pixel, the blue light emitted by the light-emitting diode is directly emitted to the outside of the display device.

[0106] The color conversion layer 147 can be formed using a droplet discharge method (e.g., an inkjet method), a coating method, an imprint method , various printing methods (screen printing, offset printing), etc. Also , a color conversion film such as a quantum dot film may be used.

[0107] As the phosphor, an organic resin layer with the phosphor printed or coated on the surface, an organic resin layer mixed with the phosphor , etc. can be used.

[0108] The material constituting the quantum dots is not particularly limited. For example, Group 14 elements, Group 15 elements, Group 16 elements, compounds composed of a plurality of Group 14 elements, elements belonging to Groups 4 to 14 and compounds of Group 16 elements, compounds of Group 2 elements and Group 16 elements, compounds of Group 13 elements and Group 15 elements, compounds of Group 13 elements and Group 17 elements, compounds of Group 14 elements and Group 1 5 elements, compounds of Group 11 elements and Group 17 elements, iron oxides, titanium oxides , chalcogenide spinels, semiconductor clusters, etc. can be mentioned.

[0109] Specifically, cadmium selenide, cadmium sulfide, cadmium telluride, zinc selenide , zinc oxide, zinc sulfide, zinc telluride, mercury sulfide, mercury selenide, mercury telluride, indium arsenide , indium phosphide, gallium arsenide, gallium phosphide, indium nitride, gallium nitride , indium antimonide, gallium antimonide, aluminum phosphide, aluminum arsenide , aluminum antimonide, lead selenide, lead telluride, lead sulfide, indium selenide , indium telluride, indium sulfide, gallium selenide, arsenic sulfide, arsenic selenide , arsenic telluride, antimony sulfide, antimony selenide, antimony telluride, sulfur Bismuth compounds, bismuth selenide, bismuth telluride, silicon, silicon carbide, germanium , tin, selenium, tellurium, boron, carbon, phosphorus, boron nitride, boron phosphide, boron arsenide, aluminum nitride, aluminum sulfide, barium sulfide, barium selenide, barium telluride, calcium sulfide, calcium selenide, calcium telluride, beryllium sulfide, beryllium selenide, beryllium telluride, magnesium sulfide, magnesium selenide, germanium sulfide, germanium selenide, germanium telluride, tin sulfide, tin selenide, tin telluride, lead oxide, copper fluoride, copper chloride, copper bromide, copper iodide, copper oxide, copper selenide, nickel oxide, cobalt oxide, cobalt sulfide, iron oxide, iron sulfide, manganese oxide, molybdenum sulfide, vanadium oxide, tungsten oxide, tantalum oxide, titanium oxide, zirconium oxide , silicon nitride, germanium nitride, aluminum oxide, barium titanate, selenium and zinc compounds of cadmium, indium, arsenic and phosphorus, compounds of cadmium, selenium and sulfur, compounds of cadmium, selenium and tellurium, compounds of indium, gallium and arsenic, compounds of indium, gallium and selenium, compounds of indium, selenium and sulfur, compounds of copper, indium and sulfur, and combinations thereof. Further, so-called alloy-type quantum dots with an arbitrarily expressed composition ratio may also be used.

[0110] Examples of the structure of the quantum dots include core type, core-shell type, core-multi shell type, etc. Also, since the proportion of surface atoms of the quantum dots is high, the reactivity is high and aggregation is likely to occur. Therefore, a protective agent is attached to the surface of the quantum dots or a protecting group is provided. It is preferably present. By virtue of the protective agent being attached or the protective group being provided, aggregation can be prevented and the solubility in the solvent can be increased. Also, the reactivity can be reduced, and the electrical stability can be improved.

[0111] Since the bandgap of quantum dots increases as their size decreases, the size is appropriately adjusted so that light of a desired wavelength can be obtained. As the size of the crystal decreases, the emission of the quantum dots shifts towards the blue side, that is, towards the high-energy side. Therefore, by changing the size of the quantum dots, the emission wavelength can be adjusted over the wavelength ranges of the spectra in the ultraviolet region, visible region, and infrared region. The size (diameter) of the quantum dots is, for example, 0.5 nm or more and 20 nm or less, preferably 1 nm or more and 10 nm or less. The narrower the size distribution of the quantum dots, the narrower the emission spectrum becomes, and light emission with good color purity can be obtained. Also, the shape of the quantum dots is not particularly limited and may be spherical, rod-shaped, disk-shaped, or other shapes. Quantum rods, which are rod-shaped quantum dots, have the function of exhibiting directional light.

[0112] Alternatively, a laminated structure of a color conversion layer 147 and a coloring layer may be provided inside or above the LED package 155. Thereby, the light converted by the color conversion layer 147 passes through the coloring layer, and the purity of the light can be enhanced. Also, a blue coloring layer may be provided at a position overlapping the blue LED chip 151B. Providing a blue coloring layer can enhance the purity of the blue light. If a blue coloring layer is not provided, the manufacturing process can be simplified.

[0113] ​​​​​The colored layer is a colored layer that transmits light in a specific wavelength range. For example, a color filter that transmits light in the wavelength range of red, green, blue, or yellow can be used. Examples of materials that can be used for the colored layer include metal materials, resin materials, resin materials containing pigments or dyes, and the like.

[0114] [Configuration Example 2 of Display Device] FIGS. 4 to 6 show cross-sectional configuration examples of a display device that are different from Configuration Example 1 of the display device.

[0115] In the display device shown in FIGS. 4 to 6, the structure of the transistor that is electrically connected to the LED package 150 is different from that in FIG. 2(A).

[0116] In the display device shown in FIG. 4, the transistor 120B is electrically connected to the LED package 150 via the conductive layer 131B.

[0117] The transistor 120B has a conductive layer 121 that functions as a gate, an insulating layer 122 that functions as a gate insulating layer, a metal oxide layer 123 that functions as a semiconductor layer, a pair of conductive layers 126a and 126b that function as a source and a drain, insulating layers 124a and 124b that function as gate insulating layers, and a conductive layer 125 that functions as a back gate. The conductive layer 121 and the metal oxide layer 123 overlap via the insulating layer 122. The conductive layer 125 and the metal oxide layer 123 overlap via the insulating layers 124a and 124b.

[0118] An insulating layer 127 is provided on the transistor 120B, and a conductive layer 131B and a conductive layer 132 are provided on the insulating layer 127. The conductive layer 131B is electrically connected to the conductive layer 126b through an opening provided in the insulating layer 127. ​

[0119] In the display device shown in FIG. 5, the transistor 120C is electrically connected to the LED package 150 via a conductive layer 131B or the like.

[0120] On the substrate 174, an insulating layer 175, a transistor 120C, a conductive layer 184a, a conductive layer 18 4b, a conductive layer 187, a conductive layer 189, an insulating layer 186, an insulating layer 188, a conductive layer 131B, and a conductive layer 132 or the like are provided. On the substrate 174, further, insulating layers such as an insulating layer 162, an insulating layer 181, an insulating layer 182, an insulating layer 183, and an insulating layer 185 are provided. One or more of these insulating layers may be regarded as components of the transistor, but in this embodiment, the description will be made without including them as components of the transistor.

[0121] As the substrate 151, an insulating substrate such as a glass substrate, a quartz substrate, a sapphire substrate, or a ceramic substrate, or a single-crystal semiconductor substrate, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or a semiconductor substrate such as an SOI substrate made of silicon or silicon carbide can be used.

[0122] The substrate 151 preferably blocks visible light (has non-transparency to visible light). By the substrate 151 blocking visible light, it is possible to suppress external light from entering the transistor 120C formed on the substrate 151. However, one aspect of the present invention is not limited to this, and the substrate 151 may have transparency to visible light.

[0123] On the substrate 174, an insulating layer 175 is provided. The insulating layer 175 prevents water from the substrate 174 Impurities such as water and hydrogen diffuse into the transistor 120C, and the metal oxide layer 165 functions as a barrier layer to prevent oxygen from desorbing from the side of the insulating layer 175. The insulating layer 175 For example, a film such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, which is less permeable to hydrogen and oxygen than a silicon oxide film, can be used.

[0124] The transistor 120C includes a conductive layer 161, an insulating layer 163, an insulating layer 164, a metal oxide layer 1 65, a pair of conductive layers 166, an insulating layer 167, a conductive layer 168, and the like.

[0125] The metal oxide layer 165 has a channel formation region. The metal oxide layer 165 has a first region overlapping with one of the pair of conductive layers 166, a second region overlapping with the other of the pair of conductive layers 166, and a third region between the first region and the second region.

[0126] The conductive layer 161 and the insulating layer 162 are provided on the insulating layer 175, and the insulating layer 163 and the insulating layer 1 62 are covered to provide the insulating layer 163 and the insulating layer 164. The metal oxide layer 165 is provided on the insulating layer 164. The conductive layer 161 functions as a gate electrode, and the insulating layer 16 3 and the insulating layer 164 function as gate insulating layers. The conductive layer 161 overlaps the metal oxide layer 165 via the insulating layer 163 and the insulating layer 164. The insulating layer 163 preferably functions as a barrier layer in the same manner as the insulating layer 175. For the insulating layer 164 in contact with the metal oxide layer 165, an oxide insulating film such as a silicon oxide film is preferably used.

[0127] Here, the height of the upper surface of the conductive layer 161 is substantially the same as the height of the upper surface of the insulating layer 162. For example, after forming an opening in the insulating layer 162 and forming the conductive layer 161 so as to fill the opening , by performing a planarization process using a CMP method or the like, the height of the upper surface of the conductive layer 161 and the insulating layer 1 62 can be aligned. Thereby, the size of the transistor 120C can be reduced.

[0128] A pair of conductive layers 166 are provided spaced apart on the metal oxide layer 165. The pair of conductive layers 166 function as a source and a drain. An insulating layer 181 is provided to cover the metal oxide layer 165 and the pair of conductive layers 1 66, and an insulating layer 182 is provided on the insulating layer 181. Openings reaching the metal oxide layer 165 are provided in the insulating layer 181 and the insulating layer 182 , and an insulating layer 167 and a conductive layer 168 are embedded inside the openings. The openings overlap with the third region. The insulating layer 167 overlaps with the side surfaces of the insulating layer 181 and the insulating layer 182 . The conductive layer 168 overlaps with the side surfaces of the insulating layer 181 and the insulating layer 18 2 via the insulating layer 167. The conductive layer 168 functions as a gate electrode, and the insulating layer 167 functions as a gate insulating layer. The conductive layer 168 overlaps with the metal oxide layer 165 via the insulating layer 167. Here, the height of the upper surface of the conductive layer 168 is substantially the same as the height of the upper surface of the insulating layer 182.

[0129] For example, after forming an opening in the insulating layer 182 and forming the insulating layer 167 and the conductive layer 1 68 so as to fill the opening, by performing a planarization process, the height of the upper surface of the conductive layer 168 and the insulating layer 182 can be aligned. Thereby, the size of the transistor 120C can be made smaller .

[0130] ​Then, an insulating layer 183 covers the upper surfaces of the insulating layer 182, the insulating layer 167, and the conductive layer 168. And an insulating layer 185 is provided. The insulating layer 181 and the insulating layer 183 preferably function as a barrier layer in the same manner as the insulating layer 175. By covering the pair of conductive layers 166 with the insulating layer 181, oxidation of the pair of conductive layers 166 due to oxygen contained in the insulating layer 182 can be suppressed.

[0131] A plug that is electrically connected to one of the pair of conductive layers 166 and the conductive layer 187 is embedded in openings provided in the insulating layer 181, the insulating layer 182, the insulating layer 183, and the insulating layer 185. The plug preferably has a conductive layer 184a that contacts the side surface of the opening and the upper surface of one of the pair of conductive layers 166, and a conductive layer 184b embedded inside the conductive layer 184a. At this time, it is preferable to use a conductive material in which hydrogen and oxygen hardly diffuse as the conductive layer 184a.

[0132] A conductive layer 187 is provided on the insulating layer 185, and an insulating layer 186 is provided on the conductive layer 187. The insulating layer 186 is provided with an opening that reaches the conductive layer 187, and a conductive layer 189 is embedded inside the opening. The conductive layer 189 functions as a plug that electrically connects the conductive layer 187 and the conductive layer 131B.

[0133] One of the pair of conductive layers 166 is electrically connected to the conductive layer 131B via the conductive layer 184a, the conductive layer 184b, the conductive layer 187, and the conductive layer 189.

[0134] As described above, in the transistor 120C shown in FIG. 5, the height of the upper surface of the conductive layer 161 is It is approximately the same as the height of the upper surface of the edge layer 162. Also, in the transistor 120C shown in FIG. 5 the height of the upper surface of the conductive layer 168 is approximately the same as the height of the upper surface of the insulating layer 182.

[0135] Thus, it is preferable that the display device of this embodiment has a transistor in which the height of the upper surface of the gate electrode is approximately the same as the height of the upper surface of the insulating layer. For example, by performing a planarization process using a method such as CMP (Chemical Mechanical Polishing), the upper surface of the gate electrode and the upper surface of the insulating layer can be planarized, and the height of the upper surface of the gate electrode and the height of the upper surface of the insulating layer can be made uniform. By performing a planarization process using a method such as CMP (Chemical Mechanical Polishing), the upper surface of the gate electrode and the upper surface of the insulating layer can be planarized, and the height of the upper surface of the gate electrode and the height of the upper surface of the insulating layer can be made uniform.

[0136] A transistor having such a configuration is easy to reduce in size. By reducing the size of the transistor the size of the pixel can be reduced, so that the fineness of the display device can be increased. By reducing the size of the transistor, the size of the pixel can be reduced, so that the fineness of the display device can be increased.

[0137] In the display device shown in FIG. 6, similar to the display device shown in FIG. 5, the transistor 120C is electrically connected to the LED package 150 via a conductive layer 131B or the like.

[0138] The display device shown in FIG. 6 has a transistor 190 having a channel formation region on a substrate 191 and a transistor 120C having a channel formation region in a metal oxide, laminated thereon.

[0139] As the substrate 191, a single crystal silicon substrate is preferable. The transistor 190 has a conductive layer 195, an insulating layer 194, an insulating layer 196, and a pair of low resistance regions 193. The conductive layer 195 functions as a gate. The insulating layer 194 is located between the conductive layer 195 and the substrate 191 , functions as a gate insulating layer. The insulating layer 196 is provided to cover the side surface of the conductive layer 195 , functions as a sidewall. The pair of low-resistance regions 193 are regions in the substrate 191 where impurities are doped. One functions as the source of the transistor 190, and the other functions as the drain of the transistor 190.

[0140] Also, an element isolation layer 192 is provided between two adjacent transistors so as to be embedded in the substrate 191.

[0141] An insulating layer 199 is provided to cover the transistor 190, and a conductive layer 198 is provided on the insulating layer 199. Through the opening of the insulating layer 199, the conductive layer 198 is electrically connected to one of the pair of low-resistance regions 19 3. Also, an insulating layer 171 is provided to cover the conductive layer 198, and a conductive layer 172 is provided on the insulating layer 171. The conductive layer 198 and the conductive layer 172 each function as a wiring. Also, an insulating layer 173 and an insulating layer 175 are provided to cover the conductive layer 172, and a transistor 120C is provided on the insulating layer 175. Since the stacked structure from the insulating layer 175 to the LED package 150 is the same as that of the display device shown in FIG. 5, detailed description is omitted.

[0142] The transistor 120C can be used as a transistor constituting a pixel circuit. Also, the transistor 190 can be used as a transistor constituting a pixel circuit or a transistor constituting a driving circuit (one or both of a gate driver and a source driver) for driving the pixel circuit. Also, the transistor 120C and the transistor 1 90 can each be used as a transistor constituting various circuits such as an arithmetic circuit and a memory circuit. ​ can be present.

[0143] With such a configuration, not only pixel circuits but also drive circuits and the like can be formed directly under the light-emitting diodes. Therefore, compared with the case where a drive circuit is provided outside the display unit, the display device can be miniaturized. Also, a display device with a narrow bezel (narrow non-display area) can be realized. can be achieved.

[0144] The display device according to one aspect of the present invention may be a display device (also referred to as an input / output device or a touch panel) equipped with a touch sensor. The configuration of each of the above-described display devices can be applied to the touch panel. can be applied.

[0145] There is no limitation on the detection element (also referred to as a sensor element) included in the touch panel according to one aspect of the present invention. Various sensors capable of detecting the proximity or contact of a detected object such as a finger or a stylus can be applied as the detection element.

[0146] As the sensor method, for example, various methods such as a capacitance method, a resistive film method, a surface acoustic wave method, an infrared method, an optical method, and a pressure-sensitive method can be used.

[0147] As the capacitance method, there are a surface capacitance method, a projected capacitance method, etc. Also, as the projected capacitance method, there are a self-capacitance method, a mutual-capacitance method, etc. Using the mutual-capacitance method is preferable because simultaneous multi-point detection becomes possible.

[0148] The touch panel according to one aspect of the present invention can adopt various configurations, such as a configuration in which a separately manufactured display device and a detection element are bonded together, and a configuration in which electrodes and the like constituting the detection element are provided on one or both of the substrate supporting the display element and the counter substrate. ​

[0149] As described above, the display device according to the present embodiment can be manufactured by mounting an LED package on a substrate on which a plurality of transistors are formed. Therefore, the manufacturing difficulty of the display device can be reduced, and the yield can be improved. Further, by combining a micro LED and a transistor using a metal oxide, a display device with reduced power consumption can be realized.

[0150] In addition, since the size of the transistor in the display device according to the present embodiment can be reduced, it is easy to increase the definition and apply it to an electronic device having a relatively small display unit.

[0151] The present embodiment can be appropriately combined with other embodiments. Also, in this specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined.

[0152] (Embodiment 2) In the present embodiment, the pixel of the display device according to one aspect of the present invention will be described with reference to FIG. 7.

[0153] [Pixel] The display device according to the present embodiment has a plurality of pixels arranged in a matrix of m rows and n columns (m and n are integers of 1 or more). FIG. 7 shows an example of a circuit diagram of a pixel 200(i, j) (i is an integer of 1 or more and m or less, and j is an integer of 1 or more and n or less).

[0154] The pixel 200(i, j) shown in FIG. 7 includes a light-emitting element 210, a switch SW21, a switch SW 22, a transistor M, and a capacitive element C1.

[0155] In the present embodiment, an example in which a transistor is used as the switch SW21 is shown. The switch​​​​ The gate of SW21 is electrically connected to the scanning line GL1(i). The source and drain of the switch SW21 are electrically connected to the signal line SL(j) on one side and the gate of the transistor M on the other side.

[0156] In this embodiment, an example of using a transistor as the switch SW22 is shown. The gate of the switch SW22 is electrically connected to the scanning line GL2(i). The source and drain of the switch SW22 are electrically connected to the wiring COM on one side and the gate of the transistor M on the other side.

[0157] The gate of the transistor M is electrically connected to one electrode of the capacitive element C1, the other of the source and drain of the switch SW21, and the other of the source and drain of the switch SW22. The source and drain of the transistor M are electrically connected to the wiring CATHODE on one side and the cathode of the light-emitting element 210 on the other side.

[0158] The other electrode of the capacitive element C1 is electrically connected to the wiring CATHODE.

[0159] The anode of the light-emitting element 210 is electrically connected to the wiring ANODE.

[0160] The scanning line GL1(i) has a function of supplying a selection signal. The scanning line GL2(i) has a function of supplying a control signal. The signal line SL(j) has a function of supplying an image signal. Constant potentials are respectively supplied to the wiring VCOM, the wiring CATHODE, and the wiring ANODE. The anode side of the light-emitting element 210 can be set to a high potential and the cathode side can be set to a potential lower than the anode side.

[0161] The switch SW21 is controlled by a selection signal and functions as a selection transistor for controlling the selection state of the pixel 200. functions as a selection transistor.

[0162] The transistor M functions as a driving transistor that controls the current flowing through the light-emitting element 210 according to the potential supplied to the gate. When the switch SW21 is in the conducting state, the image signal supplied to the signal line SL (j) is supplied to the gate of the transistor M, and the emission luminance of the light-emitting element 210 can be controlled according to the potential. (j) is supplied to the gate of the transistor M, and according to the potential, the emission luminance of the light-emitting element 210 can be controlled.

[0163] The switch SW22 has a function of controlling the gate potential of the transistor M based on a control signal. Specifically, the switch SW22 can supply a potential that turns the transistor M off to the gate of the transistor M. has. Specifically, the switch SW22 can supply a potential that turns the transistor M off to the gate of the transistor M. to the gate of the transistor M.

[0164] The switch SW22 can be used, for example, for controlling the pulse width. During the period based on the control signal, current can be supplied from the transistor M to the light-emitting element 210. Alternatively, the light-emitting element 210 can express gradation based on the image signal and the control signal. period, current can be supplied from the transistor M to the light-emitting element 210. Or, the light-emitting element 210 can express gradation based on the image signal and the control signal.

[0165] Here, for the transistors included in the pixel 200(i,j), it is preferable to apply transistors using a metal oxide (oxide semiconductor) to the semiconductor layer in which channels are respectively formed. It is preferable to apply a transistor using a metal oxide (oxide semiconductor) to the semiconductor layer in which channels are respectively formed in the transistors included in the pixel 200(i,j). Yes.

[0166] A transistor using a metal oxide having a wider bandgap and a lower carrier density than silicon can achieve an extremely small off-current. Therefore, due to the small off-current, the charges accumulated in the capacitive element connected in series with the transistor can be maintained over a long period. current, the charges accumulated in the capacitive element connected in series with the transistor can be maintained over a long period due to the small off-current. current, the charges accumulated in the capacitive element connected in series with the transistor can be maintained over a long period due to the small off-current. It is possible to hold it. Therefore, in particular, for the switches SW21 and SW22 connected in series to the capacitor C1, it is preferable to use a transistor to which an oxide semiconductor is applied. Also, by using transistors to which an oxide semiconductor is applied in the same way for other transistors, the manufacturing cost can be reduced.

[0167] In addition, a transistor in which silicon is applied to the semiconductor in which a channel is formed can also be used for the transistor included in the pixel 200(i,j). In particular, by using highly crystalline silicon such as single-crystal silicon or polycrystalline silicon, a high field-effect mobility can be realized, which is preferable because faster operation becomes possible.

[0168] Moreover, among the transistors included in the pixel 200(i,j), a configuration may be adopted in which transistors to which an oxide semiconductor is applied are used for one or more of them, and transistors to which silicon is applied are used for the rest.

[0169] Note that in FIG. 7, the transistor is shown as an n-channel type transistor, but a p-channel type transistor can also be used.

[0170] [Transistor] Next, the transistor that can be used in the display device will be described.

[0171] The structure of the transistor included in the display device is not particularly limited. For example, it may be a planar type transistor, a staggered type transistor, or an inverse staggered type transistor. Also, it may be a transistor having either a top gate structure or a bottom gate structure. ​It may have a staggered structure. Or, gate electrodes may be provided above and below the channel.

[0172] For the transistors included in the display device, for example, transistors using a metal oxide in the channel formation region can be used. Thereby, transistors with an extremely small off-current can be realized.

[0173] Or, transistors having silicon in the channel formation region may be applied to the transistors included in the display device. Examples of such transistors include transistors having amorphous silicon, transistors having crystalline silicon (typically, low-temperature polysilicon), transistors having single-crystalline silicon, and the like.

[0174] [Metal Oxide] Hereinafter, metal oxides applicable to the semiconductor layer will be described.

[0175] The metal oxide preferably contains at least indium or zinc. In particular, it preferably contains indium and zinc. In addition to these, it is preferable that aluminum, gallium, yttrium, tin, or the like is contained. Also, one or more selected from boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, or the like may be contained.

[0176] Here, consider the case where the metal oxide is an In-M-Zn oxide having indium, element M, and zinc. Note that element M is aluminum, gallium, yttrium, or ​​​​​​​​​​Use tin or the like. In addition, elements applicable to element M include boron, titanium, iron, nickel, cobalt, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. However, as element M, there may be cases where a plurality of the above-mentioned elements may be combined.

[0177] The metal oxide film can be formed by sputtering. In addition, PLD method, PECVD method, thermal CVD method, ALD method, vacuum evaporation method, etc. may also be used.

[0178] In this specification, etc., metal oxides containing nitrogen may also be collectively referred to as metal oxides (metal oxide). In addition, metal oxides containing nitrogen may be referred to as metal oxynitrides (metal oxynitride). For example, zinc oxynitride (ZnON), etc. Any metal oxide containing nitrogen may be used for the semiconductor layer.

[0179] In this specification, etc., there may be descriptions of CAAC (c-axis aligned crystal ), and CAC (Cloud-Aligned Composite). CAAC represents an example of a crystal structure, and CAC represents an example of the configuration of a function or material.

[0180] For example, CAC (Cloud-Aligned Composite)-OS can be used for the semiconductor layer.

[0181] CAC-OS or CAC-metal oxide has a conductive function in part of the material and an insulating function in part of the material, and has a function as a semiconductor in the whole material. ​​​​. When using CAC-OS or CAC-metal oxide in the semiconductor layer of a transistor, the conductive function is the function of allowing carriers, i.e., electrons (or holes), to flow, and the insulating function is the function of not allowing carriers, i.e., electrons, to flow. By making the conductive function and the insulating function act complementarily, respectively, the switching function (On / Off function) can be imparted to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating the respective functions, both functions can be maximally enhanced. When used in the semiconductor layer of a transistor, the conductive function is the function of allowing carriers, i.e., electrons (or holes), to flow, and the insulating function is the function of not allowing carriers, i.e., electrons, to flow. By making the conductive function and the insulating function act complementarily, respectively, the switching function (On / Off function) can be imparted to CAC-OS or CAC-metal oxide. By making the conductive function and the insulating function act complementarily, respectively, the switching function (On / Off function) can be imparted to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating the respective functions, both functions can be maximally enhanced.

[0182] Also, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. Also, in the material, the conductive region and the insulating region may be separated at the nanoparticle level. Also, the conductive region and the insulating region may be unevenly distributed in the material, respectively. Also, the conductive region may be observed as being blurred at the periphery and connected in a cloud shape. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. Also, in the material, the conductive region and the insulating region may be separated at the nanoparticle level. Also, the conductive region and the insulating region may be unevenly distributed in the material, respectively. Also, the conductive region may be observed as being blurred at the periphery and connected in a cloud shape. Also, in the material, the conductive region and the insulating region may be separated at the nanoparticle level. Also, the conductive region and the insulating region may be unevenly distributed in the material, respectively. Also, the conductive region may be observed as being blurred at the periphery and connected in a cloud shape. Also, the conductive region may be observed as being blurred at the periphery and connected in a cloud shape.

[0183] Also, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region may be dispersed in the material at sizes of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less, respectively. Also, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region may be dispersed in the material at sizes of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less, respectively. Also, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region may be dispersed in the material at sizes of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less, respectively.

[0184] Also, CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, CAC-OS or CAC-metal oxide de is composed of a component having a wide gap due to an insulating region and a component having a narrow gap due to a conductive region. In this configuration, when carriers flow, carriers mainly flow in the component having a narrow gap. Also, the component having a narrow gap acts complementarily to the component having a wide gap, and carriers also flow in the component having a wide gap in conjunction with the component having a narrow gap. Therefore, when using the above CAC-OS or CAC-metal oxide in the channel formation region of a transistor, a high current driving force, that is, a large on-current, and a high field-effect mobility can be obtained. That is, when carriers flow, in the component having a narrow gap, carriers mainly flow. Also, the component having a narrow gap acts complementarily to the component having a wide gap, and carriers also flow in the component having a wide gap in conjunction with the component having a narrow gap. For this reason, when using the above CAC-OS or CAC-metal oxide in the channel formation region of a transistor, a high current driving force, that is, a large on-current, and a high field-effect mobility can be obtained. That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite or a metal matrix composite. Oxide semiconductors (metal oxides) can be divided into single-crystalline oxide semiconductors and other non-single-crystalline oxide semiconductors. Examples of non-single-crystalline oxide semiconductors include CAAC-OS (c-axis aligned crystalline oxide semiconductor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxide semiconductor), pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), and amorphous oxide semiconductors. That is, when carriers flow, in the component having a narrow gap, carriers mainly flow. Also, the component having a narrow gap acts complementarily to the component having a wide gap, and carriers also flow in the component having a wide gap in conjunction with the component having a narrow gap. For this reason, when using the above CAC-OS or CAC-metal oxide in the channel formation region of a transistor, a high current driving force, that is, a large on-current,

[0185] That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite or a metal matrix composite. (matrix composite), or a metal matrix composite. Oxide semiconductors (metal oxides) can be divided into single-crystalline oxide semiconductors and other non-single-crystalline oxide semiconductors. Examples of non-single-crystalline oxide semiconductors include CAAC-OS (c-axis aligned crystalline oxide semiconductor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxide semiconductor), pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), and amorphous oxide semiconductors.

[0186] Oxide semiconductors (metal oxides) can be divided into single-crystalline oxide semiconductors and other non-single-crystalline oxide semiconductors. Examples of non-single-crystalline oxide semiconductors include CAAC-OS (c-axis aligned crystalline oxide semiconductor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxide semiconductor), pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), and amorphous oxide semiconductors. That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite or a metal matrix composite. xis aligned crystalline oxide semiconduc tor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxi de semiconductor), pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), and amorphous oxide semiconductors. Oxide semiconductors (metal oxides) can be divided into single-crystalline oxide semiconductors and other non-single-crystalline oxide semiconductors. Examples of non-single-crystalline oxide semiconductors include CAAC-OS (c-axis aligned crystalline oxide semiconductor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxide semiconductor), pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), and amorphous oxide semiconductors. That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite or a metal matrix composite.

[0187] CAAC-OS has a c-axis orientation and a plurality of nanocrystals are connected in the a-b plane direction and has a crystal structure with strain. The strain refers to a region where a plurality of nanocrystals are connected and where the lattice arrangement changes between a region with an aligned lattice arrangement and another region with an aligned lattice arrangement .

[0188] The nanocrystals are based on a hexagon, but are not necessarily regular hexagons and may be non-regular hexagons . Also, in the strain, there may be lattice arrangements such as pentagons and heptagons. Note that in CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary even near the strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice arrangement . This is because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the bond distance between atoms changes due to the substitution of metal elements .

[0189] In addition, CAAC-OS has a tendency to have a layered crystal structure ( also called a layered structure) in which a layer containing indium and oxygen (hereinafter referred to as the In layer) and a layer containing element M , zinc, and oxygen (hereinafter referred to as the (M,Zn) layer) are laminated. Note that indium and element M are mutually substitutable , and when element M in the (M,Zn) layer is substituted with indium, it can also be represented as an (In,M,Zn) layer . Also, when indium in the In layer is substituted with element M, it can be represented as an (In,M) layer .

[0190] CAAC-OS is a highly crystalline metal oxide. On the other hand, CAAC-OS has a clear crystal Since it is difficult to confirm grain boundaries, the decrease in electron mobility caused by grain boundaries is unlikely to occur. In addition, the crystallinity of metal oxides decreases due to the inclusion of impurities and the generation of defects. Therefore, CAAC-OS is not suitable for impurities or defects (oxygen vacancies (V O :oxygen va It can also be said to be a metal oxide with low levels of . Metal oxides with OS have stable physical properties. Therefore, Metal oxides are heat resistant and highly reliable.

[0191] The nc-OS is a nano-sized area (e.g., an area of ​​1 nm to 10 nm, especially 1 nm to 3 nm). The nc-OS has periodic atomic arrangement in the nanometer range. There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analysis method, nc-OS may be considered to be a-like OS or amorphous oxide semiconductor. It may be indistinguishable from the above.

[0192] Indium gallium oxide, a type of metal oxide containing indium, gallium, and zinc, is In the case of IGZO, the nanocrystals mentioned above provide a stable structure. In particular, IGZO tends to have difficulty growing crystals in the air, Small crystals (e.g., crystals of a few mm or cm) are more difficult to measure than large crystals (here, crystals of a few mm or cm). , the nanocrystals mentioned above) may be structurally more stable.

[0193] The a-like OS is a metal oxide semiconductor with a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has voids or low density areas. The e-OS has lower crystallinity compared to nc-OS and CAAC-OS.

[0194] Oxide semiconductors (metal oxides) have various structures, each having different characteristics. In this oxide semiconductor according to one aspect of the invention may have two or more of amorphous oxide semiconductor, polycrystalline oxide semiconductor, and a-like e-OS, nc-OS, and CAAC-OS.

[0195] The metal oxide film functioning as a semiconductor layer can be formed using either one or both of an inert gas and an oxygen gas. Note that there is no particular limitation on the flow rate ratio (oxygen partial pressure) of oxygen during the formation of the metal oxide film. However, in the case of obtaining a transistor with high field-effect mobility , the flow rate ratio (oxygen partial pressure) of oxygen during the formation of the metal oxide film is preferably 0% or more and 3 0% or less, more preferably 5% or more and 30% or less, and even more preferably 7% or more and 15% or less.

[0196] The metal oxide preferably has an energy gap of 2 eV or more, more preferably 2.5 eV or more , and even more preferably 3 eV or more. By using a metal oxide with a wide energy gap in this way, the off-current of the transistor can be reduced.

[0197] This embodiment can be appropriately combined with other embodiments.

[0198] (Embodiment 3) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to FIGS. 8 to 12.

[0199] The electronic device of this embodiment has a display device according to one aspect of the present invention in a display unit. One aspect Such a display device has high display quality and low power consumption. Also, the display device according to one aspect of the present invention is easy to achieve higher definition and larger size. Therefore, it can be used for the display units of various electronic devices.

[0200] Examples of the electronic devices include, for example, television sets, desktop or notebook personal computers, monitors for computers, digital signage, pachinko machines, and other relatively large-screen electronic devices such as large game machines. In addition, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, portable information terminals, audio playback devices, and the like can be mentioned.

[0201] In particular, since the display device according to one aspect of the present invention can enhance the fineness, it can be suitably used for electronic devices having a relatively small display unit. Examples of such electronic devices include, for example, wristwatch-type or bracelet-type information terminals (wearable devices), VR (Virtual Reality)-oriented devices such as head-mounted displays, AR (Augmented Reality)-oriented devices such as glasses-type devices, or MR (Mixed Reality)-oriented devices, etc., and wearable devices that can be worn on the head can be suitably used.

[0202] The electronic device of the present embodiment may have a sensor (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0203] ​​The electronic device of this embodiment can have various functions. For example, functions such as displaying various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a calendar, a function of displaying a date or time, etc., functions of executing various software (programs), a wireless communication function, a function of reading a program or data recorded on a recording medium, etc. can be

[0204] FIG. 8(A) shows a perspective view of the glasses-type electronic device 900. The electronic device 900 includes a pair of display panels 901, a pair of housings 902, a pair of optical members 903, a pair of mounting

[0205] parts 904, etc. The electronic device 900 can project the image displayed on the display panel 901 onto the display area 906 of the optical member 903. Since the optical member 903 has translucency, the user can view the image

[0206] displayed in the display area 906 overlaid on the transmitted image viewed through the optical member 903. Therefore, the electronic device 900 is an electronic device capable of AR display. The display panel 901 included in the electronic device 900 preferably has a function of imaging in addition to the function of displaying an

[0207] image. At this time, the electronic device 900 can receive the light Although not shown in the figure, a wireless receiver or a connector to which a cable can be connected is provided on one of the housings 902, and a video signal or the like can be supplied to the housing 902. Also, by arranging an acceleration sensor such as a gyro sensor on the housing 902, the orientation of the user's head can be detected, and an image corresponding to the orientation can be displayed on the display area 906. Further, it is preferable that a battery is provided in the housing 902, and it is preferable that it can be charged wirelessly or by wire. In addition, a connector capable of connecting a cable is provided, and a video signal or the like can be supplied to the housing 902. Also, in the housing 9 02, by arranging an acceleration sensor such as a gyro sensor, the orientation of the user's head can be detected, and an image corresponding to the orientation can be displayed on the display area 906. Also, in the housing 902, it is preferable that a battery is provided, and it is preferable that it can be charged wirelessly or by wire. Preferably, it can be charged.

[0208] Using FIG. 8(B), the method of projecting an image onto the display area 906 of the electronic device 900 will be described. Inside the housing 902, a display panel 901, a lens 911, and a reflector 912 are provided. Also, in a portion of the optical member 903 corresponding to the display area 906, there is a reflecting surface 913 that functions as a half mirror. has a reflecting surface 913 that functions as a half mirror.

[0209] The light 915 emitted from the display panel 901 passes through the lens 911 and is reflected by the reflector 912 toward the optical member 903 side. Inside the optical member 903, the light 915 repeatedly undergoes total reflection at the end face of the optical member 903 and reaches the reflecting surface 913, and an image is projected onto the reflecting surface 913. As a result, the user can visually recognize both the light 915 reflected by the reflecting surface 913 and the transmitted light 916 transmitted through the optical member 903 (including the reflecting surface 913). can be visually recognized. .

[0210] In FIG. 8, an example is shown in which the reflector 912 and the reflecting surface 913 each have a curved surface. This can increase the degree of freedom in optical design and reduce the thickness of the optical member 903 compared to the case where these are flat surfaces. Note that the reflector 912 and the reflecting surface 913 are flat surfaces. may also be used.

[0211] As the reflector 912, a member having a mirror surface can be used, and it is preferable that the reflectivity is high. As the reflecting surface 913, a half mirror utilizing the reflection of a metal film may be used, but when using a prism or the like utilizing total reflection, the transmittance of the transmitted light 916 can be increased.

[0212] Here, the electronic device 900 preferably has a mechanism for adjusting one or both of the distance and the angle between the lens 911 and the display panel 901. Thereby, it becomes possible to perform focusing adjustment, image enlargement, reduction, and the like. For example, one or both of the lens 911 and the display panel 901 may be configured to be movable in the optical axis direction.

[0213] The electronic device 900 preferably has a mechanism for adjusting the angle of the reflector 912. By changing the angle of the reflector 912, it becomes possible to change the position of the display area 906 where the image is displayed. Thereby, it becomes possible to arrange the display area 906 at an optimal position according to the position of the user's eyes.

[0214] The display device according to one aspect of the present invention can be applied to the display panel 901. Therefore, the electronic device 900 can be made to have extremely high display fineness.

[0215] 9(A) and 9(B) show perspective views of the goggle-type electronic device 950. Fig. 9(A) is a perspective view showing the front, plane, and left side of the electronic device 950, and Fig. 9(B) is a perspective view showing the back, bottom, and right side of the electronic device 950.

[0216] ​​​​​​​​​The electronic device 950 includes a pair of display panels 951, a housing 952, a pair of mounting parts 954, a buffer material 955, a pair of lenses 956, etc. The pair of display panels 951 are respectively provided at positions inside the housing 952 where they can be visually recognized through the lenses 956.

[0217] The electronic device 950 is an electronic device for VR. A user wearing the electronic device 950 can visually recognize the image displayed on the display panel 951 through the lenses 956. Also, by displaying different images on the pair of display panels 951, three-dimensional display using parallax can also be performed.

[0218] An input terminal 957 and an output terminal 958 are provided on the back side of the housing 952. The input terminal 957 can be connected to a video signal from a video output device or the like, or a cable for supplying electric power for charging a battery provided inside the housing 952. The output terminal 958 can function as, for example, an audio output terminal, and can be connected to earphones, headphones, etc. Note that when configured to be able to output audio data by wireless communication or when outputting audio from an external video output device, the audio output terminal may not be provided.

[0219] The electronic device 900 preferably has a mechanism capable of adjusting the left and right positions of the lenses 956 and the display panels 951 so that they are in an optimal position according to the position of the user's eyes. Also, it preferably has a mechanism for adjusting focus by changing the distance between the lenses 956 and the display panels 951.

[0220] The display device according to one aspect of the present invention can be applied to the display panel 951. It can be an electronic device 950 capable of extremely high-precision display. Thereby, a high sense of immersion can be given to the user. It can make the user feel a high sense of immersion.

[0221] The buffer member 955 is a part that contacts the user's face (such as the forehead and cheeks). By closely adhering to the user's face, the buffer member 955 can prevent light leakage and further enhance the sense of immersion. It can prevent light leakage and further enhance the sense of immersion. When the user wears the electronic device 950, the buffer member 955 preferably uses a soft material so as to closely adhere to the user's face. For example, materials such as rubber, silicone rubber, urethane, and sponge can be used. Also, as the buffer member 955, using a material with a surface such as sponge covered with cloth or leather (natural leather or synthetic leather) can make it difficult for a gap to occur between the user's face and the buffer member 955 and can preferably prevent light leakage. For members such as the buffer member 955 and the mounting portion 954 that come into contact with the user's skin, it is preferable to have a detachable structure because it facilitates cleaning and replacement. For members such as the buffer member 955 and the mounting portion 954 that come into contact with the user's skin, it is preferable to have a detachable structure because it facilitates cleaning and replacement. For members such as the buffer member 955 and the mounting portion 954 that come into contact with the user's skin, it is preferable to have a detachable structure because it facilitates cleaning and replacement. For members such as the buffer member 955 and the mounting portion 954 that come into contact with the user's skin, it is preferable to have a detachable structure because it facilitates cleaning and replacement. For members such as the buffer member 955 and the mounting portion 954 that come into contact with the user's skin, it is preferable to have a detachable structure because it facilitates cleaning and replacement. For members such as the buffer member 955 and the mounting portion 954 that come into contact with the user's skin, it is preferable to have a detachable structure because it facilitates cleaning and replacement.

[0222] The electronic device 6500 shown in FIG. 10(A) is a portable information terminal that can be used as a smartphone. The electronic device 6500 shown in FIG. 10(A) is a portable information terminal that can be used as a smartphone.

[0223] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, buttons 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display unit 6502 has a touch panel function. The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, buttons 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display unit 6502 has a touch panel function. The display unit 6502 has a touch panel function.

[0224] The display device according to an aspect of the present invention can be applied to the display unit 6502.

[0225] FIG. 10(B) is a schematic cross-sectional view including an end portion on the microphone 6506 side of the housing 6501.

[0226] A protective member 6510 having translucency is provided on the display surface side of the housing 6501, and within the space surrounded by the housing 6501 and the protective member 6510, a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged. .

[0227] On the protective member 6510, the display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed by an adhesive layer (not shown).

[0228] In a region outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded-back portion. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0229] A flexible display according to an aspect of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Further, since the display panel 6511 is extremely thin, it is possible to mount a large-capacity battery 6518 while suppressing the thickness of the electronic device. Further, by folding back a part of the display panel 6511 and arranging the connection portion of the FPC 6515 on the back side of the pixel portion, a narrow-bezel electronic device can be realized.

[0230] FIG. 11(A) shows an example of a television device. The television device 7100 has a display unit 7000 incorporated in a housing 71 01. Here, a configuration in which the housing 71 01 is supported by a stand 7103 is shown.

[0231] The display device according to one aspect of the present invention can be applied to the display unit 7000.

[0232] The operation of the television device 7100 shown in FIG. 11(A) can be performed by operation switches provided in the housing 7101 or by a separate remote control operation unit 7111. Alternatively, the display unit 700 0 may be provided with a touch sensor, and the television device 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote control operation unit 7111 may have a display unit for displaying information output from the remote control operation unit 71 11. Channel and volume operations can be performed by operation keys or a touch panel provided in the remote control operation unit 7111, and the video displayed on the display unit 7000 can be operated.

[0233] Note that the television device 7100 has a configuration including a receiver and a modem. The receiver can receive general television broadcasts. Also, by connecting to a wired or wireless communication network via a modem, one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers) information communication can also be performed.

[0234] FIG. 11(B) shows an example of a notebook personal computer. The notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7 213, an external connection port 7214, etc. The display unit 7000 is incorporated in the housing 7211.

[0235] The display device according to one aspect of the present invention can be applied to the display unit 7000.

[0236] Examples of digital signage are shown in FIGS. 11(C) and (D).

[0237] The digital signage 7300 shown in FIG. 11(C) includes a housing 7301, a display unit 7000, and a speaker 7303, etc. Further, it can have an LED lamp, operation keys (including a power switch or also an operation switch), connection terminals, various sensors, a microphone, etc.

[0238] FIG. 11(D) shows a digital signage 7400 attached to a columnar pillar 7401 . The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401 .

[0239] In FIGS. 11(C) and (D), the display device according to one aspect of the present invention can be applied to the display unit 7000 .

[0240] The larger the display unit 7000, the more information can be provided at once. Also, the larger the display unit 7000, the more easily it catches people's eyes, and for example, the advertising effect can be enhanced .

[0241] By applying a touch panel to the display unit 7000, not only can an image or video be displayed on the display unit 7000, but also the user can operate it intuitively, which is preferable. Also, when used for applications such as providing route information or traffic information, the usability can be enhanced by intuitive operation .

[0242] Also, as shown in FIGS. 11(C) and (D), the digital signage 7300 or the digital signage 7400 can be connected to an information terminal 7311 such as a smartphone held by the user ​​​It is preferably capable of cooperating with the information terminal 7411 through wireless communication. For example, the display unit The advertisement information displayed on 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Also, by operating the information terminal 7311 or the information terminal 7411, the display of the display unit 7000 can be switched.

[0243] In addition, a game can be executed on the digital signage 7300 or the digital signage 7400 using the screen of the information terminal 7 311 or the information terminal 7411 as an operation means (controller). As a result, an unspecified number of users can participate in the game simultaneously and have fun.

[0244] The electronic device shown in FIGS. 12(A) to 12(F) includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, a sensor 9007 (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0245] The electronic device shown in FIGS. 12(A) to 12(F) has various functions. For example, functions of displaying various information (such as still images, moving images, text images, etc.) on the display unit, a touch panel function, functions of displaying a calendar, date or time, etc., functions of controlling processing by various software (programs), a wireless communication function, a program recorded on a recording medium or ​​It can have functions such as reading and processing data. Note that the functions of the electronic device are not limited to these and can have various functions. The electronic device may have a plurality of display units. Moreover, the electronic device may be provided with a camera or the like to capture still images or moving images and store them in a recording medium (external or built into the camera), and may have functions such as displaying the captured images on the display unit. The details of the electronic device shown in FIGS. 12(A) to 12(F) will be described below. FIG. 12(A) is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 can be used, for example, as a smartphone. The portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, etc. Also, the portable information terminal 9101 can display character and image information on its plurality of surfaces. FIG. 12(A) shows an example in which three icons 9050 are displayed. Also, information 9051 shown by a dashed rectangle can be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming calls such as e-mails, SNS, and phone calls, titles of e-mails and SNS, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. Or, icons 9050 or the like may be displayed at the position where information 9051 is displayed.

[0246] FIG. 12(B) is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces respectively. For example, the user

[0247] Moreover, the portable information terminal 9102 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, etc. Also, the portable information terminal 9102 can display character and image information on its plurality of surfaces. FIG. 12(A) shows an example in which three icons 9050 are displayed. Also, information 9051 shown by a dashed rectangle can be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming calls such as e-mails, SNS, and phone calls, titles of e-mails and SNS, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. Or, icons 9050 or the like may be displayed at the position where information 9051 is displayed. Moreover, the portable information terminal 9102 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, etc. Also, the portable information terminal 9102 can display character and image information on its plurality of surfaces. FIG. 12(A) shows an example in which three icons 9050 are displayed. Also, information 9051 shown by a dashed rectangle can be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming calls such as e-mails, SNS, and phone calls, titles of e-mails and SNS, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. Or, icons 9050 or the like may be displayed at the position where information 9051 is displayed. Moreover, the portable information terminal 9102 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, etc. Also, the portable information terminal 9102 can display character and image information on its plurality of surfaces. FIG. 12(A) shows an example in which three icons 9050 are displayed. Also, information 9051 shown by a dashed rectangle can be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming calls such as e-mails, SNS, and phone calls, titles of e-mails and SNS, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. Or, icons 9050 or the like may be displayed at the position where information 9051 is displayed. Moreover, the portable information terminal 9102 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, etc. Also, the portable information terminal 9102 can display character and image information on its plurality of surfaces. FIG. 12(A) shows an example in which three icons 9050 are displayed. Also, information 9051 shown by a dashed rectangle can be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming calls such as e-mails, SNS, and phone calls, titles of e-mails and SNS, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. Or, icons 9050 or the like may be displayed at the position where information 9051 is displayed. Moreover, the portable information terminal 9102 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, etc. Also, the portable information terminal 9102 can display character and image information on its plurality of surfaces. FIG. 12(A) shows an example in which three icons 9050 are displayed. Also, information 9051 shown by a dashed rectangle can be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming calls such as e-mails, SNS, and phone calls, titles of e-mails and SNS, sender names,

[0248] Moreover, the portable information terminal 9102 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, etc. Also, the portable information terminal 9102 can display character and image information on its plurality of surfaces. FIG. 12(A) shows an example in which three icons 9050 are displayed. Also, information 9051 shown by a dashed rectangle can be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming calls such as e-mails, SNS, and phone calls, titles of e-mails and SNS, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. Or, icons 9050 or the like may be displayed at the position where information 9051 is displayed. dates, times, remaining battery levels, antenna reception strengths, etc. Or, icons 9050 or the like may be displayed at the position where information 9051 is displayed. - One can also check the information 9053 displayed at a position where it can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is stored in the breast pocket of the clothing. The user - can also check the information 9053 displayed at a position where it can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is stored in the breast pocket of the clothing. - can check the display without taking out the mobile information terminal 9102 from the pocket and, for example, determine whether to receive a call or not. - can check the display without taking out the mobile information terminal 9102 from the pocket and, for example, determine whether to receive a call or not.

[0249] Figure 12(C) is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9 200 can be used, for example, as a smartwatch. Also, the display unit 9001 is provided with its display surface curved and can perform display along the curved display surface. Also the mobile information terminal 9200 can also communicate hands-free by communicating with, for example, a wirelessly communicable headset. Also, the mobile information terminal 9200 can perform data transmission with other information terminals and charging through the connection terminal 9006. Note that the charging operation may be performed by wireless power supply. Note that the charging operation may be performed by wireless power supply.

[0250] Figures 12(D), (E), and (F) are perspective views showing a foldable mobile information terminal 9201. Also, Figure 12(D) shows the state where the mobile information terminal 9201 is unfolded, Figure 12(F) shows the state where it is folded, and Figure 12(E) is a perspective view of the state in the process of changing from one of Figure 12(D) and Figure 12(F) to the other. The mobile information terminal 9201 has excellent portability in the folded state and excellent display comprehensibility due to a seamless wide display area in the unfolded state. The display unit 9001 of the mobile information terminal 9 201 is supported by three housings 900 0 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less. The mobile information terminal 9201 has excellent portability in the folded state and excellent display comprehensibility due to a seamless wide display area in the unfolded state. The display unit 9001 of the mobile information terminal 9 201 is supported by three housings 900 0 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less. 0 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less. 0 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0251] This embodiment can be appropriately combined with other embodiments and examples.

Example

[0252] In this example, the results of manufacturing a display device according to one aspect of the present invention will be described.

[0253] In this example, the size of the display unit is 2.23 inches diagonally, the number of effective pixels is 20×20, and the pixel size is 2000μm×2000μm (mounting pitch of the LED package). An active matrix type display device was manufactured.

[0254] As the display element, an LED package of 1mm□ having three-color mini LED chips of red, green, and blue was used.

[0255] For the transistor, a self-aligned top gate (Top Gate Self-Alignment, TGSA) structure transistor using a crystalline metal oxide for the semiconductor layer was used. As the metal oxide, an In-Ga-Zn based oxide was used.

[0256] The gate driver and the source driver were not incorporated.

[0257] The pixel circuit of the display device of this example corresponds to the pixel circuit shown in FIG. 7.

[0258] The display device of this example has the top surface structure shown in FIGS. 1(A) to (C), and the cross-sectional structure shown in FIGS. 2(A) to (C ) and FIGS. 3(A) to (C). Note that the insulating layer 104 and the resin 129 are not provided.

[0259] A glass substrate was used for the substrate 102. The conductive layer 131R, the conductive layer 131G, and the conductive layer 131B , and for the conductive layer 132, a laminated structure of a titanium film with a thickness of about 100 nm, an aluminum film with a thickness of about 400 nm, and a titanium film with a thickness of about 100 nm was used. That is, in each of the conductive layer 131R, the conductive layer 131G, the conductive layer 131B, and the conductive layer 132, the layer in contact with the conductor 133 is a titanium film. For the protective layer 128, an acrylic film with a thickness of about 2 μm was used. After forming the laminated structure from the transistor 120 to the protective layer 128 on the substrate 102, silver paste was applied as the conductor 133 on the conductive layer 131R, the conductive layer 131G, the conductive layer 131B, and the conductive layer 132, and the LED package 150 was mounted.

[0260] Figure 13 shows a display photograph of the display device of this embodiment. As described above, in this embodiment, an active matrix type display device was fabricated by mounting an LED package on a substrate on which a transistor using a metal oxide as a semiconductor layer was formed. Also, as shown in Figure 13, good display results could be obtained with the display device fabricated in this embodiment.

[0261] Figure 13 shows a display photograph of the display device of this embodiment.

[0262] As described above, in this embodiment, an active matrix type display device was fabricated by mounting an LED package on a substrate on which a transistor using a metal oxide as a semiconductor layer was formed. Also, as shown in Figure 13, good display results could be obtained with the display device fabricated in this embodiment.

Description of Reference Numerals

Description of Reference Numerals

[0263] : Electrode, 104: Insulating layer, 106: Electrode, 108: Wiring, 109: Circuit, 110: Display section 111: Semiconductor layer, 112: Electrode, 113: Light-emitting layer, 114: Semiconductor layer, 115: Electrode 116: Electrode, 117: Semiconductor layer, 118: Light-emitting layer, 119: Semiconductor layer, 120: Transistor 111: Semiconductor layer, 112: Electrode, 113: Light-emitting layer, 114: Semiconductor layer, 115: Electrode 116: Electrode, 117: Semiconductor layer, 118: Light-emitting layer, 119: Semiconductor layer, 120: Transistor Transistor, 120A: Transistor, 120B: Transistor, 120C: Transistor , 121: Conductive layer, 122: Insulating layer, 123: Metal oxide layer, 123i: Channel formation region , 123n: Low resistance region, 124: Insulating layer, 124a: Insulating layer, 124b: Insulating layer, 1 25: Conductive layer, 126a: Conductive layer, 126b: Conductive layer, 127: Insulating layer, 128: Protective layer , 129: Resin, 130: Pixel, 131B: Conductive layer, 131G: Conductive layer, 131R: Conductive layer, 132: Conductive layer, 133: Conductor, 141: Substrate, 142: Case, 143: Wire , 144: Wire, 145: Encapsulation layer, 146: Adhesive layer, 147: Color conversion layer, 150: LE D package, 151: Substrate, 151B: Blue LED chip, 151G: Green LED chip, 151R: Red LED chip, 152B: Electrode, 152G: Electrode, 152R: Electrode, 153: Electrode, 154: Heat sink, 155: LED package, 161: Conductive layer, 162: Insulating layer, 163: Insulating layer, 164: Insulating layer, 165: Metal oxide layer, 166 : Conductive layer, 167: Insulating layer, 168: Conductive layer, 171: Insulating layer, 172: Conductive layer, 173 : Insulating layer, 174: Substrate, 175: Insulating layer, 181: Insulating layer, 182: Insulating layer, 183: Insulating layer, 184a: Conductive layer, 184b: Conductive layer, 185: Insulating layer, 186: Insulating layer, 18 7: Conductive layer, 188: Insulating layer, 189: Conductive layer, 190: Transistor, 191: Substrate, 192: Element isolation layer, 193: Low resistance region, 194: Insulating layer, 195: Conductive layer, 196: Insulating layer, 198: Conductive layer, 199: Insulating layer, 200: Pixel, 210: Light emitting element, 900: Electronic device, 901: Display panel, 902: Housing, 903: Optical member, 904: Mounting portion, 9 05: Camera, 906: Display area, 911: Lens, 912: Reflector, 913: Reflective surface 915: Light, 916: Transmitted light, 950: Electronic device, 951: Display panel, 952: Housing, 954: Mounting part, 955: Buffer member, 956: Lens, 957: Input terminal, 958: Output Terminal, 6500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power button , 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 65 08: Light source, 6510: Protection member, 6511: Display panel, 6512: Optical member, 651 3: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board , 6518: Battery, 7000: Display unit, 7100: Television device, 7101: Housing Body, 7103: Stand, 7111: Remote control unit, 7200: Notebook personal computer Body, 7212: Keyboard, 7213: Pointing device , 7214: External connection port, 7300: Digital signage, 7301: Housing, 73 03: Speaker, 7311: Information terminal device, 7400: Digital signage, 7401: Column , 7411: Information terminal device, 9000: Housing, 9001: Display unit, 9003: Speaker, 9 005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Microphone , 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9200 : Portable information terminal, 9201: Portable information terminal

Claims

[Claim 1] having a pixel, the pixel includes a first transistor, a second transistor, a first conductive layer, and a light emitting diode package; the light emitting diode package includes a first light emitting diode, a second light emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer; the first light emitting diode has a first electrode and a second electrode; the second light emitting diode has a third electrode and a fourth electrode; one of a source and a drain of the first transistor is electrically connected to the first electrode via the second conductive layer; one of a source and a drain of the second transistor is electrically connected to the third electrode via the third conductive layer; the first conductive layer is electrically connected to the second electrode via the fourth conductive layer; the first conductive layer is electrically connected to the fourth electrode via the fourth conductive layer; A display device, wherein a constant potential is supplied to the first conductive layer.

Images